Pattern forming method
JP2024175639APending Publication Date: 2024-12-18SHIN ETSU CHEMICAL CO LTD
Patent Information
- Application Number
- JP2023191843
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-06-06
- Filing Date
- 2023-11-09
- Publication Date
- 2024-12-18
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Abstract
To provide a pattern forming method capable of accurately forming a staircase-shaped pattern by using a composition for forming a resist underlayer film having excellent dry-etching resistance and having excellent film formability and substrate adhesion.SOLUTION: A pattern forming method includes steps of: forming a resist underlayer film by using a composition for forming a resist underlayer film on a substrate to be processed; forming a resist middle layer film on the resist underlayer film; forming a resist upper layer film on the resist middle layer film; forming a pattern in the resist upper layer film; transferring the pattern to the resist middle layer film; transferring the pattern to the resist underlayer film; forming the pattern in the substrate to be processed; trimming the resist underlayer film; and forming a staircase-shaped pattern in the substrate to be processed. The composition for forming a resist underlayer film contains a resin (1) and an organic solvent.SELECTED DRAWING: Figure 1
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Citation Information
Cited By
Resist underlayer film-forming composition and resist underlayer film
WO2026204762A1
