Pattern forming method

JP2024175639APending Publication Date: 2024-12-18SHIN ETSU CHEMICAL CO LTD
View PDF 0 Cites 1 Cited by

Patent Information

Application Number
JP2023191843
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-06-06
Filing Date
2023-11-09
Publication Date
2024-12-18

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

To provide a pattern forming method capable of accurately forming a staircase-shaped pattern by using a composition for forming a resist underlayer film having excellent dry-etching resistance and having excellent film formability and substrate adhesion.SOLUTION: A pattern forming method includes steps of: forming a resist underlayer film by using a composition for forming a resist underlayer film on a substrate to be processed; forming a resist middle layer film on the resist underlayer film; forming a resist upper layer film on the resist middle layer film; forming a pattern in the resist upper layer film; transferring the pattern to the resist middle layer film; transferring the pattern to the resist underlayer film; forming the pattern in the substrate to be processed; trimming the resist underlayer film; and forming a staircase-shaped pattern in the substrate to be processed. The composition for forming a resist underlayer film contains a resin (1) and an organic solvent.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art

Citation Information

Cited By

  • Resist underlayer film-forming composition and resist underlayer film

    WO2026204762A1