Release agent composition

Abstract

To provide a release agent composition with superior resin mask removability (releasability) in one embodiment.SOLUTION: According to one embodiment, a release agent composition contains an alkali agent, an organic solvent other than the alkali agent, water, and an O / W emulsion.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present disclosure relates to a stripper composition, a method for stripping a resin mask, and a method for producing an electronic component. [Background technology]

[0002] In recent years, personal computers and various electronic devices have become more energy efficient, faster, and smaller, and the wiring on package substrates mounted on these devices is becoming finer year by year. Until now, the metal mask method has been mainly used to form such fine wiring and connection terminals such as pillars and bumps, but due to its low versatility and the difficulty of responding to the miniaturization of wiring, etc., other new methods are being used.

[0003] As one of the new methods, a method is known in which a dry film resist is used as a thick-film resin mask instead of a metal mask. This resin mask is finally peeled off and removed, and an alkaline stripping composition (a cleaning composition for stripping) is used for this purpose.

[0004] For example, Patent Document 1 proposes a dual-purpose cleaner capable of simultaneously cleaning solder flux and dry film resist, characterized in that the amount of benzyl alcohol added is within the range of 5 to 94% by weight, the amount of amine compound is within the range of 1 to 50% by weight, and the amount of water is within the range of 3 to 90% by weight, based on the total amount. Paragraph 0011 of the same document and other pages state that the electrical conductivity of the cleaner is preferably within the range of 1 to 250 μS / cm, and paragraph 0012 of the same document states that an emulsion state is preferable at room temperature (25°C). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2007-224165 A Summary of the Invention [Problem to be solved by the invention]

[0006] When forming fine wiring on a printed circuit board or the like, the stripper composition is required to have high resin mask removability (peelability) in order to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in the solder or plating solution used in forming the fine wiring, pillars, and bumps. As wiring, pillars, and bumps become finer, the spaces between them also become finer, making it difficult to remove the resin mask that exists in the fine gaps. Therefore, a stripping agent composition is required to have higher resin mask removability (stripping ability). In recent years, substrates having various patterns have been proposed. For example, as shown in Fig. 1, in the case of a substrate having a metal layer 2 (e.g., a copper plating layer) formed on the substrate surface and a resin mask layer 1 present in the form of perforations on the metal layer 2 (i.e., a substrate having a structure in which the periphery (side surface) of the resin mask layer is surrounded by a metal layer), it is difficult for a conventional stripping agent composition (cleaning agent composition) to penetrate into the interface between the resin mask and the metal layer, making it difficult to strip the resin mask.

[0007] Therefore, the present disclosure provides a stripping agent composition having excellent resin mask removability (peelability), a resin mask stripping method, and a method for producing electronic components. [Means for solving the problem]

[0008] In one embodiment, the present disclosure relates to a stripping agent composition that contains an alkaline agent, an organic solvent other than the alkaline agent, and water and is an O / W type emulsion.

[0009] In one aspect, the present disclosure relates to a method for stripping a resin mask, comprising a step of stripping a resin mask from a substrate having the resin mask thereon by using the stripper composition of the present disclosure.

[0010] In one aspect, the present disclosure relates to a method for manufacturing an electronic component, the method including the resin mask peeling method of the present disclosure. Effect of the Invention

[0011] According to one embodiment of the present disclosure, a stripper composition having excellent resin mask removability (stripping property) can be provided. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a schematic diagram showing an example of the appearance of a substrate surface of a substrate to be cleaned. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] [Removal agent composition] In one or more embodiments, the present disclosure is based on the finding that a resin mask can be efficiently removed (peeled off) by using a stripping agent that is an O / W type emulsion containing an alkali, an organic solvent, and water.

[0014] That is, in one embodiment, the present disclosure relates to a stripper composition (hereinafter also referred to as "the stripper composition of the present disclosure") that contains an alkaline agent, an organic solvent other than the alkaline agent, and water and is an O / W type emulsion.

[0015] According to the present disclosure, a stripper composition having excellent resin mask removability (peelability) can be provided.

[0016] Although the details of the mechanism of action by which the effects of the present disclosure are expressed are unclear, it is presumed as follows. It is generally believed that peeling of the resin mask is caused by interfacial stress due to the components of the stripping composition penetrating into the resin mask and causing the resin mask to swell. It is believed that the alkaline agent, organic solvent and water in the stripper composition of the present disclosure penetrate into the resin mask, promoting dissociation of the alkali-soluble resin contained in the resin mask, and further promoting the stripping of the resin mask by causing charge repulsion. However, when the stripper composition is an aqueous solution in which an alkaline agent and an organic solvent are dissolved in water, the alkaline agent and the organic solvent are dispersed throughout the bulk of the cleaning composition, which is thought to make it difficult for them to efficiently adsorb to the interface of the alkali-soluble resin and penetrate into the interior. On the other hand, since the liquid state of the stripper composition of the present disclosure is an O / W type (oil-in-water type) emulsion using water as a dispersion medium, the organic solvent containing the alkali agent becomes locally concentrated, which is believed to significantly improve the adsorption of the alkali-soluble resin to the interface and the penetration into the interior. This is believed to enable efficient removal (peeling) of the resin mask. However, the present disclosure need not be construed as being limited to this mechanism.

[0017] In one or more embodiments, the stripper composition of the present disclosure is a stripper composition (cleaning composition) for stripping a resin mask. In the present disclosure, stripping of a resin mask may include dissolving the resin mask, removing the resin mask, and cleaning the resin mask. By using the stripper composition of the present disclosure for cleaning a substrate having a resin mask, the resin mask can be efficiently removed. And, by using the stripper composition of the present disclosure for cleaning electronic components such as electronic circuit boards having a resin mask, high-quality electronic components can be obtained with a high yield.

[0018] In the present disclosure, a resin mask is a mask for protecting a surface of a material from treatments such as etching, plating, heating, etc., that is, a mask that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development steps, a resist layer that has been subjected to at least one of exposure and development (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. The resin mask is formed using a resist whose physical properties, such as solubility in a developer, change with light or electron beams. Resists are largely divided into negative and positive types based on the reaction method with light or electron beams. A negative resist has a property that its solubility in a developer decreases when exposed to light, and the exposed portion of a layer containing a negative resist (hereinafter also referred to as a "negative resist layer") is used as a resin mask after exposure and development processing. A positive resist has a property that its solubility in a developer increases when exposed to light, and the exposed portion of a layer containing a positive resist (hereinafter also referred to as a "positive resist layer") is removed after exposure and development processing, and the unexposed portion is used as a resin mask. By using a resin mask having such properties, fine connections of a circuit board, such as metal wiring, metal pillars, and solder bumps, can be formed. In one or more embodiments, the resin material for forming the resin mask may be a film-like photosensitive resin, a resist film, or a photoresist. A general-purpose resist film may be used, and a negative resist film is preferable.

[0019] (Liquid state) The liquid state of the stripping agent composition of the present disclosure is an O / W type (oil-in-water type) emulsion, and in one or more embodiments, the organic solvent is emulsified (dispersed) as emulsified particles (oil phase) in water (aqueous phase, continuous phase). In one or more embodiments, the alkaline agent may be present in both water and the organic solvent. The liquid state of the stripping agent composition can be determined from turbidity and electrical conductivity, specifically, by the method described in the Examples. The emulsification method for making the liquid state of the stripping agent composition an O / W type emulsion is not particularly limited, and in one or more embodiments, mechanical emulsification methods such as agitators, homogenizers, and sprays can be used. The emulsification may be performed by one-pass processing or by circulation operation.

[0020] (Turbidity) From the viewpoint of obtaining a highly peelable O / W emulsion, the turbidity of the stripping composition of the present disclosure is preferably 0.5 NTU or more, more preferably 10 NTU or more, and even more preferably 100 NTU or more. The turbidity of the stripping composition is a value at 60° C. and can be measured using a turbidimeter, specifically, by the method described in the Examples.

[0021] (Electrical Conductivity) From the viewpoint of obtaining a highly peelable O / W type emulsion, the electrical conductivity of the stripping agent composition of the present disclosure is preferably 1 S / m (10,000 μS / cm) or more, more preferably 3 S / m or more, and even more preferably 5 S / m or more, and from the same viewpoint, is preferably 50 S / m or less, more preferably 25 S / m or less, and even more preferably 10 S / m or less. The electrical conductivity of the stripping agent composition is a value at 60° C., and can be measured using a benchtop electrical conductivity meter, specifically, by the method described in the Examples. The electrical conductivity value can be adjusted by the concentration of the alkaline agent and various additives.

[0022] (Component A: Alkaline) The stripping agent composition of the present disclosure contains an alkali (hereinafter also referred to as "component A"). Component A may be one type or a combination of two or more types. In one or more embodiments, from the viewpoint of improving the removability (peelability) of the resin mask and from the viewpoint of preparing an O / W type emulsion, Component A is preferably an alkali containing at least one selected from a quaternary ammonium hydroxide and an alkanolamine, and more preferably an alkali containing a quaternary ammonium hydroxide and an alkanolamine, or an alkali consisting of a quaternary ammonium hydroxide and an alkanolamine. From the same viewpoint, the total content of the quaternary ammonium hydroxide and the alkanolamine in Component A is preferably 3% by mass or more, more preferably 5% by mass or more, and even more preferably 7% by mass or more. As the quaternary ammonium hydroxide, from the viewpoint of improving the removability of the resin mask and from the viewpoint of preparing an O / W type emulsion, preferably, a quaternary ammonium hydroxide having a total of 10 or less carbon atoms, more preferably, tetramethylammonium hydroxide, is used. The quaternary ammonium hydroxide may be one type or a combination of two or more types. As the alkanolamine, from the viewpoint of improving the removability (peelability) of the resin mask and from the viewpoint of preparing an O / W type emulsion, preferably, an alkanolamine having a total of 6 or less carbon atoms, more preferably, monoethanolamine, is used. The alkanolamine may be one type or a combination of two or more types.

[0023] The content of component A in the stripper composition of the present disclosure is preferably 5% by mass or more, more preferably 10% by mass or more, from the viewpoint of improving the removability (removability) of the resin mask and from the viewpoint of preparing an O / W type emulsion, and from the same viewpoint, is preferably 25% by mass or less, more preferably 20% by mass or less. More specifically, the content of component A in the stripper composition of the present disclosure is preferably 5% by mass or more and 25% by mass or less, more preferably 10% by mass or more and 20% by mass or less. When component A is a combination of two or more kinds, the content of component A refers to the total content thereof. When component A contains a quaternary ammonium hydroxide, the content of the quaternary ammonium hydroxide in the stripper composition of the present disclosure is preferably 0.1% by mass or more, more preferably 1% by mass or more, and even more preferably 1.5% by mass or more from the viewpoint of improving the removability (removability) of the resin mask, and is preferably 10% by mass or less, more preferably 8% by mass or less, and even more preferably 7% by mass or less from the viewpoint of improving the removability (removability) of the resin mask and waste liquid treatability. When the quaternary ammonium hydroxide is a combination of two or more kinds, the content of the quaternary ammonium hydroxide refers to the total content thereof. When component A contains an alkanolamine, the content of the alkanolamine in the stripper composition of the present disclosure is preferably 0.1 mass% or more, more preferably 0.5 mass% or more, even more preferably 3 mass% or more, and even more preferably 7 mass% or more from the viewpoint of improving the removability (removability) of the resin mask, waste liquid treatability, suppression of damage to the substrate resin, and suppression of damage to the substrate metal, and is preferably 20 mass% or less, more preferably 15 mass% or less, and even more preferably 13 mass% or less. When two or more types of alkanolamine are used in combination, the content of the alkanolamine refers to the total content thereof. When component A contains a quaternary ammonium hydroxide and an alkanolamine, the mass ratio of the content of the quaternary ammonium hydroxide to the content of the alkanolamine in the stripper composition of the present disclosure (content of quaternary ammonium hydroxide / content of alkanolamine) is preferably 0.1 or more, more preferably 0.15 or more, from the viewpoint of improving the removability (removability) of the resin mask and from the viewpoint of forming an O / W type emulsion, and from the same viewpoints, is preferably 5 or less, more preferably 1 or less, and even more preferably 0.5 or less.

[0024] (Component B: organic solvent) The stripper composition of the present disclosure contains an organic solvent (hereinafter also referred to as "component B") other than the alkaline agent (component A). Component B may be one type or a combination of two or more types. From the viewpoint of improving the removability (peelability) of the resin mask and from the viewpoint of forming an O / W type emulsion, it is preferable that component B contains an organic solvent having a hydroxyl group, and more preferably is an organic solvent having a hydroxyl group. From the same viewpoint, the content of the organic solvent having a hydroxyl group in component B is preferably 20% by mass or more, more preferably 30% by mass or more, and even more preferably 40% by mass or more. Examples of organic solvents having a hydroxyl group include glycol ethers and aromatic alcohols. In one or more embodiments, the glycol ether may be a compound having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms, and examples thereof include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, ethylene glycol monopropyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, diethylene glycol diethyl ether, and triethylene glycol (TEG). One type of glycol ether may be used, or two or more types may be used in combination. In one or more embodiments, the aromatic alcohol may be a compound having a hydroxyl group bonded to at least one of the substituents of an aromatic ring having a substituent. The substituent may be an alkyl group having 1 to 3 carbon atoms. The aromatic ring may be, for example, a benzene ring or a naphthalene ring. From the viewpoint of improving the removability (peelability) of the resin mask, the number of carbon atoms of the aromatic alcohol is preferably 7 or more and preferably 9 or less. The aromatic alcohol may be, for example, benzyl alcohol. The aromatic alcohol may be one type or a combination of two or more types. From the viewpoint of improving the removability (peelability) of the resin mask and from the viewpoint of forming an O / W type emulsion, Component B preferably contains a glycol ether, and more preferably contains diethylene glycol monobutyl ether (BDG).

[0025] The content of component B in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 3% by mass or more, and even more preferably 6% by mass or more from the viewpoint of improving the removability (removability) of the resin mask and preparing an O / W type emulsion, and is preferably 25% by mass or less, more preferably 20% by mass or less, and even more preferably 15% by mass or less from the viewpoint of improving the removability (removability), stability, and odor suppression. More specifically, the content of component B in the stripper composition of the present disclosure is preferably 1% by mass or more and 25% by mass or less, more preferably 3% by mass or more and 20% by mass or less, and even more preferably 6% by mass or more and 15% by mass or less. When component B is a combination of two or more kinds, the content of component B refers to the total content thereof. When component B contains glycol ether, the content of glycol ether in the stripper composition of the present disclosure is preferably 0.5% by mass or more, more preferably 1% by mass or more, and even more preferably 3% by mass or more from the viewpoint of improving the removability (removability) of the resin mask and preparing an O / W type emulsion, and is preferably 12% by mass or less, more preferably 10% by mass or less, and even more preferably 8% by mass or less from the viewpoint of improving the removability (removability), stability, and odor suppression. More specifically, the content of glycol ether in the stripper composition of the present disclosure is preferably 0.5% by mass or more and 12% by mass or less, more preferably 1% by mass or more and 10% by mass or less, and even more preferably 3% by mass or more and 8% by mass or less. When two or more glycol ethers are used in combination, the content of glycol ether refers to the total content thereof. When component B contains an aromatic alcohol, the content of the aromatic alcohol in the stripper composition of the present disclosure is preferably 0.5% by mass or more, more preferably 1% by mass or more, and even more preferably 3% by mass or more from the viewpoint of improving the removability (removability) of the resin mask and forming an O / W type emulsion, and is preferably 12% by mass or less, more preferably 10% by mass or less, and even more preferably 8% by mass or less from the viewpoint of improving the removability (removability), stability, and odor suppression. More specifically, the content of the aromatic alcohol in the stripper composition of the present disclosure is preferably 0.5% by mass or more and 12% by mass or less, more preferably 1% by mass or more and 10% by mass or less, and even more preferably 3% by mass or more and 8% by mass or less. When two or more aromatic alcohols are used in combination, the content of the aromatic alcohol refers to the total content thereof.

[0026] (Component C: water) In one or more embodiments, the stripper composition of the present disclosure may further contain water (hereinafter, also referred to as "component C"). Examples of component C include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0027] The content of component C in the stripper composition of the present disclosure can be the remainder excluding component A, component B, and optional components (other components described later). For example, the content of component C in the stripper composition of the present disclosure is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more from the viewpoints of improving the removability (stripping property) of the resin mask, stability, and forming an O / W type emulsion, and from the same viewpoint, it is preferably 99% by mass or less, more preferably 95% by mass or less, and even more preferably 90% by mass or less. More specifically, the content of component C in the stripper composition of the present disclosure is preferably 50% by mass or more and 99% by mass or less, more preferably 60% by mass or more and 95% by mass or less, and even more preferably 70% by mass or more and 90% by mass or less.

[0028] In the present disclosure, the "content of each component of the stripper composition" refers to the content of each component at the time of use, i.e., at the time when the use of the stripper composition for cleaning (resin mask stripping treatment) is started. In one or more embodiments, the content of each component in the stripper composition of the present disclosure can be regarded as the blending amount of each component in the stripper composition of the present disclosure.

[0029] (Component D: Salt) In one or more embodiments, the stripper composition of the present disclosure may further contain a salt (hereinafter, also referred to as "Component D") from the viewpoint of improving the removability (removal property) of the resin mask and from the viewpoint of forming an O / W type emulsion. From the same viewpoint, Component D is preferably an organic salt. From the same viewpoint, the acid constituting the salt is preferably a polyvalent acid, such as 1-hydroxyethane-1,1-diphosphonic acid (HEDP) or carbonic acid. From the same viewpoint, the base constituting the salt is preferably a quaternary ammonium hydroxide. From the same viewpoint, the quaternary ammonium hydroxide is preferably a quaternary ammonium hydroxide having a total of 10 or less carbon atoms, more preferably tetramethylammonium hydroxide (TMAH). Examples of component D include a salt of TMAH and HEDP, and a salt of TMAH and carbonic acid.

[0030] When the stripper composition of the present disclosure contains component D, the content of component D in the stripper composition of the present disclosure is preferably 0.3 mol / L or more, more preferably 0.5 mol / L or more, and even more preferably 0.6 mol / L or more from the viewpoint of improving the removability (removability) of the resin mask and from the viewpoint of making it an O / W type emulsion, and from the same viewpoint, it is preferably 2 mol / L or less, more preferably 1.5 mol / L or less, and even more preferably 1 mol / L or less. More specifically, the content of component D in the stripper composition of the present disclosure is preferably 0.3 mol / L or more and 2 mol / L or less, more preferably 0.5 mol / L or more and 1.5 mol / L or less, and even more preferably 0.6 mol / L or more and 1 mol / L or less. When component D is a combination of two or more kinds, the content of component D refers to the total content thereof.

[0031] (Other Ingredients) In one or more embodiments, the stripping agent composition of the present disclosure may further contain other components as necessary within a range that does not impair the effects of the present disclosure. Examples of other components include solvents other than Components A to C, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, defoamers, antibacterial agents, etc.

[0032] (pH) From the viewpoint of improving the removability (peelability) of the resin mask, the pH of the stripper composition of the present disclosure is preferably 10 or more, more preferably 11 or more, and even more preferably 12 or more, and from the viewpoint of suppressing damage to the substrate resin, it is preferably 18 or less, more preferably 17 or less, and even more preferably 16 or less. The pH of the stripper composition is a value at 25° C. and can be measured using pH, specifically, it can be measured by the method described in the Examples.

[0033] The embodiment of the stripper composition of the present disclosure may be a so-called one-component type in which all components are premixed and supplied to the market, or may be a so-called two-component type in which components are mixed at the time of use.

[0034] (Method of producing the release agent composition) In one or more embodiments, the stripper composition of the present disclosure can be produced by blending Component A, Component B, Component C, and, if necessary, the above-mentioned optional components (Component D and other components) by a known method. For example, in one or more embodiments, the stripper composition of the present disclosure can be produced by blending at least Component A, Component B, and Component C. Therefore, the present disclosure relates to a method for producing a stripper composition, which includes a step of blending at least component A, component B, and component C. In the present disclosure, "blending" includes mixing component A, component B, component C, and, if necessary, the above-mentioned optional components (component D and other components) simultaneously or in any order. In the method for producing the stripper composition of the present disclosure, the preferred amount of each component may be the same as the preferred content of each component in the stripper composition of the present disclosure described above.

[0035] The stripper composition of the present disclosure may be in a form used for cleaning as it is, or may be prepared as a concentrate to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. The stripper composition concentrate can be used by diluting it so that each component has the above-mentioned content (i.e., the content at the time of cleaning) when used. The stripper composition concentrate can also be used by adding each component separately when used. In the present disclosure, "at the time of use" or "at the time of cleaning" of the stripper composition concentrate refers to the state in which the stripper composition concentrate is diluted.

[0036] [Item to be cleaned] In one or more embodiments, the object to be cleaned is a substrate having a resin mask. Examples of the substrate include a glass epoxy multilayer substrate, a printed circuit board, a wafer, a copper plate, and an aluminum plate. The resin mask may be, for example, a negative resin mask or a positive resin mask, and a negative resin mask is preferred in terms of the ease with which the effects of the present disclosure are exerted. An example of a negative resin mask is a negative dry film resist that has been exposed and / or developed. In the present disclosure, a negative resin mask is formed using a negative resist, and an example of the negative resin mask is a negative resist layer that has been exposed and / or developed. In the present disclosure, a positive resin mask is formed using a positive resist, and an example of the positive resin mask is a positive resist layer that has been exposed and / or developed. The resin mask has a thickness of, for example, 5 μm to 35 μm.

[0037] In one or a plurality of embodiments, the substrate having a resin mask (object to be cleaned) may be a substrate having a metal layer and a resin mask on its surface. In one or more embodiments, the metal layer is a copper plating layer. The copper plating layer can be formed by, for example, an electrolytic copper plating method. The thickness of the metal layer is, for example, 3 μm or more and 30 μm or less. In one or more embodiments, the metal layer is used as a metal wiring or a wiring connection portion. In one or more embodiments, the resin mask may be a resin mask (resin mask layer) present in the form of perforations in the metal layer (see FIG. 1). In one or more embodiments, the sides of the resin mask are surrounded by the metal layer. In one or more embodiments, the shape of the resin mask layer may be a polygonal (square, hexagonal, octagonal, etc.) columnar, cylindrical, approximately cylindrical, etc. The diameter of the resin mask layer (diameter of the circumscribing circle in the case of a polygonal shape) may be, for example, 20 μm or more and 200 μm or less. The thickness of the resin mask layer may be, for example, 5 μm or more and 50 μm or less. The interface ratio of the resin mask present in the form of perforations (=interface line length between the resin mask and the metal layer / area of ​​the resin mask) can be 0.01 to 0.5, or 0.02 to 0.2. Here, the interface line length between the resin mask and the metal layer is, for example, the circumferential length when the resin mask is a circle when viewed from above. A new problem has been found in that the resin mask of the object to be cleaned having such a structure has poor removability when used with a conventional stripper. In one or more embodiments, the stripper composition of the present disclosure can suitably strip a resin mask having such a structure. In one or more embodiments, the object to be cleaned in the present disclosure may be an object to be cleaned having at least one resin mask attached in the form of perforations in a metal layer, as described above.

[0038] In one or more other embodiments, the substrate (object to be cleaned) having the resin mask may be, for example, an electronic component having a metal layer and a resin mask on its surface, or a manufacturing intermediate thereof. The electronic component may be, for example, at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, and includes an intermediate product after a resin mask treatment. Specific examples of objects to be cleaned include electronic components in which wiring, connection terminals, and the like are formed on the surface of a substrate by at least one of soldering using a resin mask and plating (copper plating, aluminum plating, nickel plating, tin plating, and the like). In this disclosure, soldering refers to providing solder in the resin mask-free portion of the substrate and forming a solder bump by heating. In this disclosure, plating refers to performing at least one plating process selected from copper plating, aluminum plating, nickel plating, and tin plating on the resin mask-free portion of the substrate. The resin mask-free portion refers to a portion in a resist pattern (a resin mask having a pattern shape) formed by subjecting a resin mask laminated to a substrate to a developing process, from which the resin mask has been removed by the developing process.

[0039] In one or more other embodiments, the substrate (object to be cleaned) having the resin mask may be a substrate having a resin mask in a fine gap. For example, the substrate having a resin mask in a fine gap may be a substrate on which a non-cured resin mask is applied to the substrate surface through at least one of exposure and development curing treatments, and then the non-cured resin mask is removed and a circuit pattern is formed through plating treatment. The cured resin mask is present in the non-plated portion of the formed circuit pattern. In the present disclosure, in one or more embodiments, a gap refers to the distance between circuit patterns (thin line portions) (the interval between adjacent thin line portions), and is also called a space (S). Examples of the thickness (plating thickness) of the thin line portions include 3 μm or more and 30 μm or less. The width of the thin line portion is also called a line (L). In one or more embodiments, a resin mask in a fine gap refers to a resin mask that exists in a space with a space width (S) of 10 μm or less. Examples of the thickness of the resin mask include 5 μm or more and 35 μm or less. An example of a resin mask present in a minute gap is a resin mask that exists in a space with a space width (S) of 4 to 7 μm.

[0040] [Removal method] In one aspect, the present disclosure relates to a method for removing a resin mask (hereinafter, also referred to as the "removal method of the present disclosure"), which includes a step of removing a resin mask from a substrate (object to be cleaned) having the resin mask by using the stripping composition of the present disclosure (hereinafter, also referred to simply as the "removal step"). The object to be cleaned in the stripping step includes the above-mentioned objects to be cleaned.

[0041] The stripping method of the present disclosure includes a step of stripping a resin mask from a substrate (object to be cleaned) having the resin mask thereon by using the stripper composition of the present disclosure (hereinafter, also simply referred to as a "stripping step"). In one or more embodiments, the stripping step includes contacting the object to be cleaned with the stripper composition of the present disclosure. According to the stripping method of the present disclosure, the resin mask can be efficiently removed.

[0042] Examples of the method for peeling a resin mask from an object to be cleaned using the stripping composition of the present disclosure, or the method for contacting the object to be cleaned with the stripping composition of the present disclosure, include a method for contacting the object by immersing the object in a cleaning bath containing the stripping composition, a method for contacting the object by spraying the stripping composition (shower method), and an ultrasonic cleaning method for irradiating the object with ultrasonic waves while immersed in the stripping composition. The stripping composition of the present disclosure can be used for cleaning as is without dilution. Examples of the object to be cleaned include the above-mentioned objects to be cleaned. Examples of the immersion time include 1 minute or more and 60 minutes or less, and further 5 minutes or more and 30 minutes or less. Examples of the spray time include 1 minute or more and 60 minutes or less, and further 3 minutes or more and 30 minutes or less.

[0043] In one or more embodiments, the stripping method of the present disclosure may include a step of contacting the object to be cleaned with the stripper composition of the present disclosure, rinsing with water, and drying. Examples of the rinsing method include rinsing with running water. Examples of the drying method include air blow drying. In one or more embodiments, the stripping method of the present disclosure can include a step of contacting the object to be cleaned with the stripper composition of the present disclosure and then rinsing the object with water.

[0044] In the stripping method of the present disclosure, it is preferable to irradiate ultrasonic waves when the stripping composition of the present disclosure comes into contact with the object to be cleaned, and it is more preferable that the ultrasonic waves have a relatively high frequency, from the viewpoint of easily exerting the stripping and cleaning power of the stripping composition of the present disclosure. From the same viewpoint, the irradiation conditions of the ultrasonic waves are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

[0045] In the stripping method of the present disclosure, the temperature of the stripper composition of the present disclosure is preferably 40° C. or higher, and more preferably 50° C. or higher, from the viewpoint of easily exerting the stripping and cleaning power of the stripper composition of the present disclosure, and is preferably 70° C. or lower, and more preferably 60° C. or lower, from the viewpoint of reducing the effect on the substrate.

[0046] [Electronic component manufacturing method] In one aspect, the present disclosure relates to a method for producing an electronic component (hereinafter also referred to as "the method for producing an electronic component of the present disclosure"), which includes the stripping method of the present disclosure. In one or more embodiments, the method for producing an electronic component of the present disclosure is a method for producing an electronic component, which includes a step (stripping step) of stripping a resin mask from a substrate (object to be cleaned) having the resin mask by using the stripper composition of the present disclosure. Examples of the object to be cleaned include the above-mentioned objects to be cleaned. Examples of the stripping method in the stripping step include the same method as the above-mentioned stripping method of the present disclosure. According to the method for producing electronic components of the present disclosure, the resin mask attached to the electronic components can be effectively peeled off (removed), which enables the production of highly reliable electronic components. Furthermore, by using the stripper composition of the present disclosure, the resin mask attached to the electronic components can be easily peeled off, which shortens the stripping time (cleaning time) and improves the production efficiency of the electronic components.

[0047] [kit] In one aspect, the kit of the present disclosure relates to a kit for producing the stripper composition of the present disclosure (hereinafter, also referred to as the "kit of the present disclosure"). In one or more embodiments, the kit of the present disclosure is a kit for use in either the stripping method of the present disclosure or the method for producing an electronic component of the present disclosure. According to the kit of the present disclosure, a stripper composition having excellent resin mask stripping properties can be obtained. In one or more embodiments, the kit of the present disclosure includes a kit (two-liquid stripping composition) that contains the first liquid and the second liquid in a mutually unmixed state, and in which components A, B, and C are contained in either or both of the first liquid and the second liquid, and the first liquid and the second liquid are mixed when used. After the first liquid and the second liquid are mixed, they may be diluted with water (component C) as necessary. The first liquid and the second liquid may each contain the above-mentioned optional components (component D, other components) as necessary. EXAMPLES

[0048] The present disclosure will be specifically described below with reference to examples, but the present disclosure is not limited to these examples in any way.

[0049] 1. Preparation of Stripping Compositions of Examples 1 to 3 and Comparative Examples 1 and 2 The components shown in Table 1 were blended in the amounts (mass % or molar concentration, active content) shown in Table 1 and mixed by stirring to prepare the stripping agent compositions of Examples 1 to 3 and Comparative Examples 1 to 3.

[0050] The following materials were used to prepare the stripper composition: (Component A) TMAH: Tetramethylammonium hydroxide [Resonac Corporation, 25% aqueous solution] MEA: Monoethanolamine [Nippon Shokubai Co., Ltd.] Diethanolamine [Tokyo Chemical Industry Co., Ltd.] (Component B) BDG: Diethylene glycol monobutyl ether [Nippon Nyukazai Co., Ltd.] Benzyl alcohol [Fujifilm Wako Pure Chemical Industries, Ltd.] (Component C) Water [Pure water of 1μS / cm or less produced using the Organo Corporation pure water system G-10DSTSET] (Component D) Salt of TMAH and HEDP [prepared by adding etidronic acid to an aqueous TMAH solution] Salt of TMAH and carbonic acid [prepared by bubbling carbon dioxide into an aqueous TMAH solution]

[0051] 2. Measurement of each parameter [pH of Stripping Agent Composition] The pH of the stripping composition at 25° C. was measured using a pH meter (HM-30G, Toa Denpa Kogyo Co., Ltd.), and was the value 15 seconds after the electrode of the pH meter was immersed in the treatment liquid that had been stirred and homogenized. The results are shown in Table 1.

[0052] [Liquid state] The stripping composition was heated to 60° C., stirred to homogenize, and then the turbidity was measured to determine whether it was an emulsion or not according to the following criteria. The results are shown in Table 1. Emulsion: Turbidity 0.5 NTU or more Solubilization: Turbidity less than 0.5 NTU Furthermore, when the turbidity was 0.5 NTU or more and the electrical conductivity of the stripping composition was 1 S / m or more, it was determined to be an O / W type emulsion.

[0053] [Turbidity] The stripping composition is heated to 60°C, stirred to homogenize, and then the turbidity is measured using a turbidimeter ZD-2A (manufactured by Joman). The sample is placed in the turbidimeter and the value is read after 20 seconds. The results are shown in Table 1.

[0054] [Electrical conductivity] The stripping composition is heated to 60°C and stirred to make it uniform, and then the electrical conductivity is measured using a tabletop electrical conductivity meter "DS-72" (HORIBA Corporation). The electrode is immersed in the stripping composition and the value is read 15 seconds later. The results are shown in Table 1.

[0055] 3. Evaluation Using the prepared stripping compositions of Examples 1 to 3 and Comparative Examples 1 and 2, the removability (stripping ability) of a resin mask was evaluated as follows. [Test piece for evaluating peelability] The test piece for evaluating peelability is 50mm x 50mm in size, and has a 15μm thick metal layer 2 formed by copper plating on the surface of a glass epoxy multilayer substrate with a copper thin film, and a 25μm thick resin mask layer 1 made of a negative dry film resist in circular areas with a diameter of 100μm present in the form of perforations in the metal layer 2, with 15μm of the 25μm thick resin mask buried in the metal layer. There are 3000 perforations. [Resin mask removability (peelability)] 3 kg of the stripping composition was added to a 5L stainless steel beaker. This was heated to 60°C, and the test piece was sprayed for 275 seconds (pressure: 0.2 MPa, spray distance: 8 cm) while circulating with a box-type spray washer equipped with a one-fluid nozzle (full cone-shaped) J020 (Ikeuchi Co., Ltd.). Then, water was poured for 30 seconds to rinse, and then dried by nitrogen blowing. Using a digital microscope (VHX-6000, Keyence Co., Ltd.), the test piece after the above-mentioned spray treatment was visually observed at 300 times magnification, and the occurrence rate of resin mask residue was measured. It can be judged that the lower the value, the better the resin mask removability (peelability). The results are shown in Table 1.

[0056] [Table 1]

[0057] As shown in Table 1, the stripper compositions of Examples 1 to 3, which are in an O / W type emulsion state, were found to have superior resin mask removability (stripping ability) compared to Comparative Example 1, which is in a solubilized state, and Comparative Example 2, which is in an emulsion state. [Industrial Applicability]

[0058] According to the present disclosure, a stripping composition capable of efficiently removing a resin mask can be provided. Furthermore, by using the stripping composition of the present disclosure, it is possible to improve the performance and reliability of manufactured electronic components, and the productivity of semiconductor devices can be improved. [Explanation of symbols]

[0059] 1 Resin mask layer (dry film resist) 2 Metal layer (metal plating layer)

Claims

1. The method comprises the steps of: The stripping composition is an O / W type emulsion.

2. The stripper composition of claim 1 , wherein the alkaline agent comprises a quaternary ammonium hydroxide and an alkanolamine.

3. The stripper composition of claim 2, wherein the alkanolamine is monoethanolamine.

4. The stripping composition according to claim 1, having an electrical conductivity of 1 S / m or more.

5. The stripper composition of claim 1 further comprising a salt.

6. The stripper composition of claim 5, wherein the salt is an organic salt.

7. 6. The stripping composition according to claim 5, wherein the acid constituting the salt is a polyvalent acid.

8. 6. The stripping composition according to claim 5, wherein the base constituting the salt is a quaternary ammonium hydroxide.

9. A method for stripping a resin mask, comprising a step of stripping the resin mask from a substrate having the resin mask thereon by using the stripping composition according to any one of claims 1 to 8.

10. A method for manufacturing an electronic component, comprising the method for removing a resin mask according to claim 9.

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