Coaxial multi-color LED system and method

Abstract

To provide a novel LED structure for a display panel.SOLUTION: A method for fabricating a single pixel micro LED device for a display panel, includes providing a substrate having a pixel driver, and fabricating an LED structure layer laminated on the substrate. The method also includes bonding the substrate and the LED structure layer with a bonding layer. The LED structure layer is electrically connected to the pixel driver through the bonding layer. In some embodiments, the method also includes coating the LED structure layer with a reflective layer before bonding the substrate and the LED structure layer. In some embodiments, the method also includes patterning the LED structure layer to form a red-emitting LED.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Related Applications

[0001] This application claims priority to U.S. Provisional Patent Application No. 62 / 863,559, entitled "Systems and Methods for Coaxial Multi-Color LEDs," filed June 19, 2019, each of which is incorporated by reference into this specification.

[0002] Technical Field This disclosure relates generally to light emitting diode (LED) display devices, and more particularly to systems and methods for making LED semiconductor devices that emit different colors with high brightness and micrometer-scale pixel sizes. [Background technology]

[0003] background

[0003] With the recent development of small LED and micro LED technology, consumer devices and applications such as augmented reality (AR), projection, head-up display (HUD), mobile device display, wearable device display, and automotive display require LED panels with improved resolution and brightness. For example, an AR display integrated in goggles and located close to the wearer's eyes may be as small as a fingernail while still requiring HD definition (1280x720 pixels) or more. Many electronic devices require a specific pixel size, adjacent pixel distance, brightness, and viewing angle for an LED panel. In many cases, maintaining both the resolution and brightness requirements is a challenge when trying to achieve maximum resolution and brightness with a small display. Conversely, in some cases, pixel size and brightness may have a roughly inverse relationship, making it difficult to balance them simultaneously. For example, getting high brightness for each pixel may result in low resolution. Alternatively, getting high resolution may result in reduced brightness.

[0004]

[0004] Generally, at least red, green, and blue colors are overlapped to reproduce a wide range of colors. In some cases, separate monochromatic LEDs are fabricated in different non-overlapping zones in a pixel area to include at least red, green, and blue colors in the pixel area. Existing technologies face the challenge of improving the effective illumination area in each pixel when the distance between adjacent LEDs is fixed. On the other hand, when one LED illumination area is fixed, it can be a difficult task to further improve the overall resolution of the LED panel, because LEDs with different colors need to occupy their designated zones in one pixel.

[0005]

[0005] Active matrix liquid crystal displays (LCD) and organic light emitting diode (OLED) displays combined with thin film transistor (TFT) technology are becoming increasingly popular in today's commercial electronic devices. These displays are widely used in laptop personal computers, smart phones, and personal digital assistants. Millions of pixels work together to create an image on the display. TFTs turn each pixel on and off individually, acting as a switch to brighten or darken the pixel, allowing convenient and efficient control of each pixel and the entire display.

[0006]

[0006] However, conventional LCD displays suffer from low light efficiency, resulting in high power consumption and limited battery operating time. Although active matrix organic light emitting diode (AMOLED) display panels generally consume less power than LCD panels, AMOLED display panels are still large power consumers in battery-operated devices. It is desirable to reduce the power consumption of display panels to extend battery life.

[0007]

[0007] Conventional inorganic semiconductor light emitting diodes (LEDs) have demonstrated excellent light efficiency, making active matrix LED displays more desirable for battery-operated electronic devices. An array of driver circuits and light emitting diodes (LEDs) are used to control millions of pixels to display images on a display. Both monochrome and full-color display panels can be manufactured according to a wide variety of fabrication methods.

[0008]

[0008] However, integrating thousands or even millions of micro-LEDs with a pixel driving circuit array is quite difficult. Various fabrication methods have been proposed. In one approach, the control circuitry is fabricated on one substrate and the LEDs are fabricated on a separate substrate. The LEDs are transferred to an intermediate substrate and the original substrate is removed. The LEDs on the intermediate substrate are then picked and placed, one or a few at a time, onto the substrate with the control circuitry. However, this fabrication process is inefficient, costly, and unreliable. In addition, there are no existing manufacturing tools to transfer micro-LEDs in large quantities. Therefore, new tools need to be developed.

[0009]

[0009] In another approach, the entire LED array with the original substrate is aligned to the control circuit and bonded to the control circuit using metal bonding. The substrate on which the LEDs are fabricated remains in the final product and can cause optical crosstalk. In addition, thermal mismatch between two different substrates can cause stress at the bonding interface, resulting in reliability issues. In addition, multi-color display panels usually require more LEDs and LEDs of different colors to be grown on different substrate materials compared to monochromatic display panels, thus making the traditional manufacturing process more complex and inefficient. Summary of the Invention [Problem to be solved by the invention]

[0010]

[0010] It would therefore be desirable to provide an LED structure for a display panel that specifically addresses the above-mentioned shortcomings.

[0011] overview

[0011] There is a need for an improved multicolor LED that helps improve and address the shortcomings of conventional display systems such as those mentioned above. In particular, there is a need for an LED device structure that can simultaneously improve brightness and resolution while efficiently maintaining low power consumption. The multicolor LED device described herein integrates at least three LED structures that are vertically stacked by being arranged in different layers of the device structure and utilize one of the same electrodes to receive control current. By arranging at least three LED structures aligned along one axis as disclosed herein, the system efficiently enhances the light illumination efficiency within one pixel area and at the same time improves the resolution of the LED panel. [Means for solving the problem]

[0012]

[0012] Pitch refers to the center-to-center distance of adjacent pixels on a display panel. In some embodiments, the pitch can vary from about 20 μm, from about 10 μm, and / or preferably from about 5 μm or less to about 40 μm. Much effort has been put into pitch reduction. When the pitch specification is determined, the area of ​​one pixel is fixed.

[0013]

[0013] The multi-color coaxial LED system described herein allows light with different color combinations to be emitted from one pixel area without using additional area to accommodate LED structures with different colors. Therefore, the footprint of one pixel is greatly reduced and the resolution of the micro LED panel can be improved. Meanwhile, the concentration of different color lights from the boundary of one micro LED device greatly enhances the brightness within one pixel area.

[0014]

[0014] Compared with the conventional fabrication process of micro-LED display chips that rely on inefficient pick-and-place process or unreliable multi-substrate approach, the multi-color micro-LED fabrication process disclosed herein effectively increases the efficiency and reliability of micro-LED device fabrication. For example, the LED structure can be directly bonded to a substrate with pixel driving circuitry without introducing an intermediate substrate. In addition, the lack of substrate of the micro-LED structure can be continued to the final multi-color device, thereby reducing crosstalk and mismatch.

[0015]

[0015] The multi-color micro-LED devices described herein can simultaneously improve brightness and resolution, making them suitable for modern display panels, especially for high-definition AR devices and virtual reality (VR) glasses.

[0016] In one embodiment, a single pixel multicolor micro light emitting diode (LED) device for a display panel includes a substrate and two or more LED structure layers, including a first LED structure layer stacked on top of the substrate and a second LED structure layer stacked on top of the first LED structure layer. In some cases, the first LED structure layer and the second LED structure layer substantially overlap each other laterally to form an optical path that couples light emitted from the first LED structure layer and light emitted from the second LED structure layer.

[0017]

[0017] In some embodiments, the two or more LED structural layers of the single pixel multi-color micro-LED device further include a third LED structural layer stacked on top of the second LED structural layer. In some cases, the third LED structural layer substantially overlaps laterally with the first LED structural layer and the second LED structural layer to form an optical path for further coupling light emitted from the third LED structural layer.

[0018]

[0018] In some embodiments, the single pixel multi-color micro LED device further includes a first bonding layer between the substrate and the first LED structure layer, a second bonding layer between the first LED structure layer and the second LED structure layer, and a third bonding layer between the second LED structure layer and the third LED structure layer.

[0019] In some embodiments of the single pixel multicolor micro-LED device, the first bonding layer is about 0.1 μm to about 3 μm, the second bonding layer is about 0.1 μm to about 5 μm, and the third bonding layer is about 0.1 μm to about 5 μm. In some embodiments, the second and third bonding layers are transparent.

[0020] In some embodiments, the substrate of the single pixel multi-color micro-LED device supports a pixel driving circuit, and each of the first, second and third LED structure layers is electrically connected to the pixel driving circuit.

[0021] In some embodiments, the pixel drive circuitry includes a thin film transistor pixel drive circuitry or a silicon CMOS drive circuitry.

[0022]

[0022] In some embodiments, the single pixel multi-color micro-LED device further includes a first reflective layer between the substrate and the first LED structure layer, a second reflective layer between the first LED structure layer and the second LED structure layer, and a third reflective layer between the second LED structure layer and the third LED structure layer.

[0023]

[0023] In some embodiments of the single pixel multi-color micro-LED device, at least one of the first, second, and third reflective layers has a distributed Bragg reflector (DBR) structure, and each of the first, second, and third reflective layers is from about 0.1 μm to about 5 μm.

[0024]

[0024] In some embodiments of the single pixel multi-color micro LED device, first light emitted from the first LED structure layer propagates through the second LED structure layer and the third LED structure layer, and second light emitted from the second LED structure layer propagates through the third LED structure layer.

[0025] In some embodiments of the single pixel multicolor micro-LED device, each of the first, second, and third LED structure layers includes an epitaxial structure forming an LED in each of the LED structure layers, a lower conductive layer electrically connected to a lower portion of the LED, and an upper conductive layer electrically connected to an upper portion of the LED. In some cases, the lower conductive layer is also electrically connected to a pixel driving circuit, and the upper conductive layer is also electrically connected to a common electrode.

[0026]

[0026] In some embodiments of the single pixel multi-color micro-LED device, the epitaxial structure of each of the first, second, and third LED structure layers is selected from one or more structures from the group consisting of III-V nitride epitaxial structures, III-V arsenide epitaxial structures, III-V phosphide epitaxial structures, and III-V antimonide epitaxial structures.

[0027]

[0027] In some embodiments of the single pixel multi-color micro-LED device, the lower conductive layer and the upper conductive layer of each of the first, second, and third LED structural layers include an indium tin oxide (ITO) layer, and each of the ITO layers is from about 0.01 μm to about 1 μm.

[0028]

[0028] In some embodiments, the single pixel multi-color micro-LED device further includes an anode metal contact pad electrically connected to the lower conductive layer of each of the first, second, and third LED structural layers, a first cathode metal contact pad electrically connected to the upper conductive layer of the first LED structural layer, a second cathode metal contact pad electrically connected to the upper conductive layer of the second LED structural layer, and a third cathode metal contact pad electrically connected to the upper conductive layer of the third LED structural layer.

[0029]

[0029] In some embodiments of the single pixel multi-color micro-LED device, the anode and cathode metal contact pads comprise one or more metals selected from the group consisting of aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, indium tin oxide, palladium, indium, and titanium.

[0030] In some embodiments of the single pixel multicolor micro-LED device, the epitaxial structure of each of the first, second, and third LED structure layers is from about 0.3 μm to about 5 μm.

[0031] In some embodiments of the single pixel multi-color micro-LED device, the LEDs in different LED structure layers generate light of different wavelengths.

[0032] In some embodiments of the single pixel multicolor micro-LED device, the LEDs in different LED structure layers generate light at different visible wavelengths.

[0033] In some embodiments of the single pixel multi-color micro-LED device, the LEDs in the different LED structure layers are ultraviolet, blue, green, orange, red, or infrared micro-LEDs.

[0034]

[0034] In some embodiments of the single pixel multi-color micro-LED device, the first LED structure layer forms a red light LED, the second LED structure layer forms a green light LED, and the third LED structure layer forms a blue light LED.

[0035] In some embodiments of the single pixel multicolor micro-LED device, the longest dimension of the single pixel multicolor micro-LED device is from about 1 μm to about 500 μm.

[0036]

[0036] In some embodiments of the single pixel multicolor micro-LED device, the single pixel multicolor micro-LED device has a cross-sectional shape of a pyramid with a bottom layer having a longest lateral dimension and a top layer having a shortest lateral dimension.

[0037] In some embodiments of the single pixel multicolor micro-LED device, the single pixel multicolor micro-LED device has an external quantum efficiency of 20% or greater.

[0038]

[0038] In another embodiment, a micro-LED display chip includes a substrate supporting an array of pixel driving circuits and an array of single pixel multi-color micro-light emitting diode (LED) devices, each of the single pixel multi-color LED devices includes two or more LED structure layers stacked on top of the substrate and pixel driving circuits, with a bonding layer between adjacent LED structure layers, each of the LED structure layers further including an epitaxial structure forming a micro-LED configured to generate light of one color. In some cases, the array of single pixel multi-color LEDs is electrically connected to the array of pixel driving circuits and a common electrode, and the two or more LED structure layers laterally overlap each other to form a light propagation path through the micro-LEDs stacked directly together, and the micro-LEDs of different LED structure layers generate light of different wavelengths.

[0039]

[0039] In some embodiments of the micro-LED display chip, the common electrode comprises a separate common electrode structure for all of the micro-LEDs in the same LED structure layer that produce the same color.

[0040] In yet another embodiment, a method for fabricating a single pixel three-color micro-light emitting diode (LED) device for a display panel includes providing a substrate, fabricating a first LED structure layer stacked on top of the substrate, fabricating a second LED structure layer stacked on top of the first LED structure layer, and fabricating a third LED structure layer stacked on top of the second LED structure layer. In some cases, the first LED structure layer, the second LED structure layer, and the third LED structure layer substantially overlap each other laterally to form an optical path that couples light emitted from the first LED structure layer, the second LED structure layer, and the third LED structure layer.

[0041]

[0041] In some embodiments, the method for making a single pixel tri-color micro-LED device further includes bonding the substrate and the first LED structural layer together with a first bonding layer, bonding the first LED structural layer and the second LED structural layer together with a second bonding layer, and bonding the second LED structural layer and the third LED structural layer together with a third bonding layer.

[0042]

[0042] In some embodiments of the method for fabricating a single pixel tri-color micro-LED device, the first bonding layer includes one or more bonding structures selected from the group consisting of Au-Au bonds, Au-Sn bonds, Au-In bonds, Ti-Ti bonds, and Cu-Cu bonds.

[0043]

[0043] In some embodiments of the method for making a single pixel tri-color micro-LED device, each of the second bonding layer and the third bonding layer comprises one or more bonding materials selected from the group consisting of transparent plastic (resin), SiO2, spin-on glass (SOG), and bonding adhesive Micro Resist BCL-1200.

[0044] In some embodiments of the method for making a single pixel tri-color micro-LED device, the first bonding layer is about 0.1 μm to about 3 μm, the second bonding layer is about 0.1 μm to about 5 μm, and the third bonding layer is about 0.1 μm to about 5 μm. In some cases, the second and third bonding layers are transparent.

[0045]

[0045] In some embodiments, the method for making a single pixel tri-color micro-LED device further includes depositing a first reflective layer on the first LED structural layer before bonding the substrate and the first LED structural layer, depositing a second reflective layer on the first LED structural layer before bonding the first LED structural layer and the second LED structural layer, and depositing a third reflective layer on the second LED structural layer before bonding the second LED structural layer and the third LED structural layer.

[0046] In some embodiments, the method of making a single pixel tri-color micro-LED device further comprises forming a distributed Bragg reflector (DBR) structure for each of the first, second, and third reflective layers. In some embodiments, each of the first, second, and third reflective layers is about 0.1 μm to about 5 μm.

[0047] In some embodiments of the method for fabricating a single pixel tri-color micro-LED device, the substrate supports a pixel driving circuit, and each of the first, second, and third LED structure layers is electrically connected to the pixel driving circuit.

[0048] In some embodiments, the method of making a single pixel three-color micro-LED device further includes, for each of the first, second, and third LED structure layers including an epitaxial structure, patterning the epitaxial structure to form an LED in each of the LED structure layers, depositing a bottom conductive layer electrically connecting to a bottom of the LED, and depositing a top conductive layer electrically connecting to a top of the LED. In some cases, the bottom conductive layer is also electrically connected to a pixel driving circuit, and the top conductive layer is also electrically connected to a common electrode.

[0049]

[0049] In some embodiments of the method for fabricating a single pixel tri-color micro-LED device, the epitaxial structure of each of the first, second, and third LED structure layers is selected from one or more structures from the group consisting of III-V nitride epitaxial structures, III-V arsenide epitaxial structures, III-V phosphide epitaxial structures, and III-V antimonide epitaxial structures.

[0050]

[0050] In some embodiments of the method for fabricating a single pixel tri-color micro-LED device, the lower conductive layer and the upper conductive layer of each of the first, second, and third LED structural layers comprise an indium tin oxide (ITO) layer, each of the ITO layers being from about 0.01 μm to about 1 μm.

[0051]

[0051] In some embodiments, the method of making a single pixel tri-color micro-LED device further includes depositing an anode metal contact pad electrically connecting to the lower conductive layer of each of the first, second, and third LED structural layers, depositing a first cathode metal contact pad electrically connecting to the upper conductive layer of the first LED structural layer, depositing a second cathode metal contact pad electrically connecting to the upper conductive layer of the second LED structural layer, and depositing a third cathode metal contact pad electrically connecting to the upper conductive layer of the third LED structural layer.

[0052] In some embodiments of the method for making a single pixel tri-color micro-LED device, the epitaxial structure of each of the first, second, and third LED structure layers is from about 0.3 μm to about 5 μm.

[0053] In some embodiments of the method for making a single pixel tri-color micro-LED device, the LEDs in different LED structure layers generate light of different wavelengths.

[0054] In some embodiments of the method for making a single pixel tri-color micro-LED device, the LEDs in different LED structure layers generate light at different visible wavelengths.

[0055] In some embodiments of the method for making a single pixel tri-color micro-LED device, the LEDs in the different LED structure layers are ultraviolet, blue, green, orange, red, or infrared micro-LEDs.

[0056]

[0056] In some embodiments, the method for fabricating a single pixel tri-color micro LED device further includes patterning the first LED structure layer to form a red light LED, patterning the second LED structure layer to form a green light LED, and patterning the third LED structure layer to form a blue light LED.

[0057]

[0057] The compact design of the multi-color LED device and system disclosed herein utilizes lateral overlap of light-emitting LED structures, thereby improving the light-emitting efficiency, resolution, and overall performance of the LED display system. Furthermore, the fabrication of the multi-color LED display system can reliably and efficiently form the LED structure pattern without using or holding additional substrates. Therefore, the implementation of the multi-color LED display system can meet the stringent display requirements of AR and VR, head-up displays (HUD), mobile device displays, wearable device displays, high-definition miniature projectors, and automotive displays compared to the use of traditional LEDs.

[0058]

[0058] It should be noted that the various embodiments described above can be combined with any other embodiments described herein. The features and advantages described herein are not all-inclusive, and in particular many additional features and advantages will be apparent to those skilled in the art in view of the drawings, specification, and claims. Furthermore, it should be noted that the terms used in this specification are primarily selected for ease of reading and instructional purposes, and may not be selected to delineate or limit the scope of the present invention.

[0059] BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order that the present disclosure may be understood in more detail, a more particular description may be made by referring to the features of various embodiments, some of which are illustrated in the accompanying drawings. However, the accompanying drawings merely illustrate the relevant features of the present disclosure and should therefore be considered as illustrative rather than limiting, and other useful features may be recognized. [Brief description of the drawings]

[0060] [Figure 1] FIG. 1 is a cross-sectional view of a single pixel tri-color coaxial LED device 100 according to some embodiments. [Figure 2A]

[0061] FIG. 2 is a cross-sectional view of a multi-layer structure 200 for forming a three-color coaxial LED device according to some embodiments. [Figure 2B]

[0062] 2A-2C are cross-sectional views of a tri-color coaxial LED device 250 after fabrication processes according to some embodiments. [Diagram 3]

[0063] FIG. 3 is a circuit diagram illustrating a matrix of three-color LED devices 300 according to some embodiments. [Figure 4]

[0064] 4 is a flow diagram illustrating a method 400 for making a three-color coaxial LED device according to some embodiments. [Diagram 5]

[0065] FIG. 5 is a top view of a micro-LED display panel 500 according to some embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0061]

[0066] According to common practice, the various features illustrated in the figures are not drawn to scale. Thus, dimensions of the various features may be arbitrarily expanded or reduced for clarity. In addition, some of the figures may not depict all of the components of a given system, method, or device. Finally, like reference numerals may be used to denote like features throughout the specification and figures.

[0062] Detailed Description

[0067] Numerous details are described herein to provide a thorough understanding of the example embodiments illustrated in the accompanying drawings. However, some embodiments may be practiced without many of the specific details, and the claims are limited only by the features and aspects specifically recited in the claims. Moreover, well-known processes, components, and materials have not been described in extensive detail so as not to unnecessarily obscure relevant aspects of the embodiments described herein.

[0063]

[0068] FIG. 1 is a cross-sectional view of a single pixel tri-color coaxial LED device 100 according to some embodiments. In some embodiments, the tri-color coaxial LED device 100 includes a substrate 102. For convenience, "up" means away from the substrate 102, and "down" means toward the substrate 102, and other directional terms such as above, below, above, below, below, below, etc. are interpreted accordingly. The support substrate 102 is a substrate on which an array of individual drive circuits 104 is fabricated. In some embodiments, the drive circuits may be located on the substrate 102 or in one of the layers above the miniature tri-color LED structure 100. Each drive circuit is a pixel drive circuit 104. In some cases, the pixel drive circuits are thin film transistor pixel drive circuits or silicon CMOS pixel drive circuits. In one embodiment, the substrate 102 is a Si substrate. In another embodiment, the support substrate 102 is a transparent substrate, such as a glass substrate. Other example substrates include GaAs, GaP, InP, SiC, ZnO, and sapphire substrates. The drive circuits 104 form individual pixel drive circuits that control the operation of the individual single pixel tri-color coaxial LED devices 100. The circuitry on the substrate 102 includes contacts to each individual pixel drive circuit 104, as well as a ground contact. Each miniature tri-color LED structure 100 also has two types of contacts: a P electrode or anode, such as 120, which is connected to the pixel drive circuit, and an N electrode or cathode, such as 122, 124, and 126, which is connected to ground (i.e., the common electrode).

[0064]

[0069] Although some features are described herein using the term "layer," it should be understood that such features are not limited to one layer, but may include multiple sublayers. In some cases, a "structure" may take the form of a "layer."

[0065]

[0070] In some embodiments, the three LED structures including the three epitaxial layers 108, 112, and 116 are formed in a stacked structure, for example, the green LED epitaxial layer 112 is directly on top of the red LED epitaxial layer 108, and the blue LED epitaxial layer 112 is directly on top of the green epitaxial layer 112. In some embodiments, light emitted from the red epitaxial layer 108 can propagate through the green epitaxial layer 112 and then the blue epitaxial layer 116 and is emitted from the tri-color LED device 100. In some embodiments, light emitted from the green epitaxial layer 112 can propagate through the blue epitaxial layer 116 and is emitted from the tri-color LED device 100. In some embodiments, the LED structure includes many epitaxial sublayers having different compositions. Examples of LED epitaxial structures include III-V nitride, III-V arsenide, III-V phosphide, and III-V antimonide epitaxial structures. Examples of micro-LEDs include GaN-based UV / blue / green micro-LEDs, AlInGaP-based red / orange micro-LEDs, and GaAs or InP-based infrared (IR) micro-LEDs.

[0066]

[0071] In some embodiments, each of the stacked LED structures can be individually controlled to generate its individual light. In some embodiments, the combined light of the top LED epitaxial layer resulting from the operation of all the LED epitaxial layers in the tri-color coaxial LED device 100 can change the color of one pixel on a display panel in a small footprint.

[0067]

[0072] In some embodiments, depending on the design of the coaxial LED device 100, the colors emitted by the LED structures included in the same device are not limited to red, green, and blue. For example, suitable colors can be selected from a range of different colors from 380 nm to 700 nm wavelengths in the visible color range. In some embodiments, LED structures can be implemented that emit other colors from the non-visible range, such as ultraviolet and infrared. For example, the three-color selection can be red, green, and blue from bottom to top. In another embodiment, the three-color selection can be ultraviolet, orange, and infrared from bottom to top. In some embodiments, the wavelength of light from the LED structures on one layer of the device 100 must be longer than the wavelength of the LED structures on the layer above the current layer. For example, the wavelength of light from the bottom epitaxial layer 108 is longer than the wavelength of light from the middle epitaxial layer 112, which is longer than the wavelength of light from the top epitaxial layer 116. In some embodiments, the wavelength of light from an LED structure on one layer of device 100 should be shorter than the wavelength of light from an LED structure on a layer above the current layer. For example, the wavelength of light from bottom epitaxial layer 108 is shorter than the wavelength of light from middle epitaxial layer 112, which is shorter than the wavelength of light from top epitaxial layer 116.

[0068]

[0073] In some embodiments, an insulating layer 128 covers the top and sidewalls of the tri-color LED structure. In some embodiments, a P-electrode 120 is disposed on the side of the tri-color LED device 100 and connects to the red, green, and blue LED structures. In some embodiments, separate N-electrodes are disposed and connect to each of the red, green, and blue LED structures. For example, the N-electrode 126 is connected to the red LED structure including the LED epitaxial layer 108. The N-electrode 124 is connected to the green LED structure including the LED epitaxial layer 112. The N-electrode 122 is connected to the blue LED structure including the LED epitaxial layer 116.

[0069]

[0074] In some embodiments, the bottom epitaxial layer 108 is bonded to the substrate through a metal bonding layer 106. In some embodiments, the metal bonding layer 106 can also be used as a reflector to reflect light emitted from the LED structure above. In some embodiments, the middle epitaxial layer 112 is bonded to the bottom epitaxial layer 108 through a first transparent bonding layer 110. In some embodiments, the top epitaxial layer 116 is bonded to the middle epitaxial layer 112 through a second transparent bonding layer 114. In some embodiments, the transparent bonding layer can facilitate the transmission of light emitted from layers below the bonding layer.

[0070]

[0075] In some embodiments, a reflective layer is formed between the LED epitaxial layers to improve light emitting efficiency, as further described below, In some embodiments, a conductive transparent layer is formed between the LED epitaxial layers to improve electrical conductivity and transparency.

[0071]

[0076] 2A is a cross-sectional view of a multi-layer structure 200 for forming a tri-color coaxial LED device according to some embodiments. More specifically, FIG 2A illustrates the fabrication of multiple layers on a substrate for a tri-color coaxial LED device.

[0072]

[0077] FIG. 2A shows a substrate 202 supporting pixel driving circuits 204. In some embodiments, the substrate 202 is made of silicon and is about 700 μm thick. In one approach, a metal (bonding) layer 206 is grown on the substrate 202. The metal (bonding) layer 206 may include an ohmic contact layer and a metal bonding layer. In some embodiments, the thickness of the metal (bonding) layer 206 is about 0.1 μm to about 3 μm. In some cases, two metal layers are included in the metal (bonding) layer 206. One of the metal layers is deposited on the epitaxial layer 210 or the reflective layer 208 directly above the metal (bonding) layer 206. The other metal bonding layer is also deposited on the substrate 202 with the pixel driving circuits 204. In some embodiments, the composition of the metal (bonding) layer 206 includes Au-Au bonding, Au-Sn bonding, Au-In bonding, Ti-Ti bonding, Cu-Cu bonding, or a mixture thereof. For example, if Au-Au bonding is selected, two layers of Au each require a Cr coating as an adhesion layer and a Pt coating as an anti-diffusion layer. And the Pt coating is between the Au and Cr layers. The Cr and Pt layers are positioned on the top and bottom of the two bonded Au layers. In some embodiments, if the thickness of the two Au layers is approximately the same, the interdiffusion of Au on both layers will bond the two layers together under high pressure and high temperature. Eutectic bonding, thermocompression bonding, and transient liquid phase (TLP) bonding are examples of techniques that can be used.

[0073]

[0078] In some embodiments, the epitaxial layer 210 is bonded on top of an existing structure of the substrate 202 having the pixel driving circuitry 204 through a metal (bonding) layer 206. In one approach, the epitaxial layer 210 is grown on a separate substrate (called an epitaxial substrate). After bonding, the epitaxial substrate is then removed, for example by laser lift-off or chemical wet etching, leaving the structure shown in FIG. 2A.

[0074]

[0079] In some embodiments, the reflective layer 208 is deposited on the epitaxial layer 210 before bonding. The reflective layer 208 is between the metal (bonding) layer 206 and the epitaxial layer 210 after bonding. In some cases, the thickness of the reflective layer 208 is about 0.1 μm to about 5 μm. In some embodiments, the reflective layer 208 includes a distributed Bragg reflector (DBR) structure. For example, the reflective layer 208 is formed from multiple layers of alternating or different materials with various refractive indices. In some cases, each layer boundary of the DBR structure causes partial reflection of light waves. The reflective layer 208 can be used to reflect some selected wavelengths, for example, red light. In some embodiments, the reflective layer 208 is made from multiple layers of SiO2 and Ti3O5. By varying the thickness and number of each layer of SiO2 and Ti3O5, selective reflection or transmission of different wavelengths of light can be formed. In some embodiments, the reflective layer 208 of the red light LED includes multiple layers of Au and / or indium tin oxide (ITO).

[0075]

[0080] In some embodiments, the reflective layer 208 of the red LED structure has low absorptivity (e.g., 5% or less) for the light generated by the different layers of the tri-color LED device, and in some embodiments, the reflective layer 208 of the red LED structure has high reflectivity (e.g., 95% or more) for the light generated above the current reflective layer, e.g., red, green, and blue light.

[0076]

[0081] In some embodiments, the epitaxial layer 210 is for the formation of red micro-LEDs. Examples of red LED epitaxial structures include III-V nitride epitaxial structures, III-V arsenide epitaxial structures, III-V phosphide epitaxial structures, and III-V antimonide epitaxial structures. In some cases, the thin films in the red LED epitaxial layer 210 can include layers of P-type GaP / P-type AlGaInP light-emitting layer / AlGaInP / N-type AlGaInP / N-type GaAs. In some embodiments, the P-type is typically Mg-doped and the N-type is typically Si-doped. In some examples, the thickness of the epitaxial layer 210 is about 0.3 μm to about 5 μm.

[0077]

[0082] In some embodiments, above the epitaxial layer 210 is an indium tin oxide (ITO) layer 212, which is a transparent conductive oxide. In some embodiments, the ITO layer 212 has a thickness of about 0.01 μm to about 1 μm. In some cases, the ITO layer 212 is deposited on the epitaxial layer 210, typically by evaporation, such as e-beam evaporation or sputtering deposition, before any bonding with the next epitaxial layer. In some examples, the ITO layer is used to maintain good electrical conductivity of the electrode connections, while in some cases improving the optical properties of the LED device, such as reflectivity or transparency.

[0078]

[0083] In some embodiments, a second reflective layer 214 is deposited on the ITO layer 212 before any bonding process with the next epitaxial layer. In some cases, the thickness of the reflective layer 214 is about 0.1 μm to about 5 μm. In some embodiments, the reflective layer 214 includes a DBR structure. For example, the reflective layer 214 is formed from multiple layers of alternating or different materials with various refractive indices. In some cases, each layer boundary of the DBR structure causes partial reflection of the light wave. The reflective layer 214 can be used to reflect some selected wavelengths, for example, green light. In some embodiments, the reflective layer 214 is made from multiple layers of SiO2 and Ti3O5. By varying the thickness and number of each layer of SiO2 and Ti3O5, selective reflection or transmission of different wavelengths of light can be formed.

[0079]

[0084] In one example, the following DBR structure shown in Table 1 is used to reflect green light from a green LED.

[0080] [Table 1]

[0081]

[0086] In some embodiments, the reflective layer 214 of the green LED structure has low absorptivity (e.g., 5% or less) for the light generated by the different layers of the three-color LED device. In some embodiments, the reflective layer 214 of the green LED structure has high reflectivity (e.g., 95% or more) for the light generated above the current reflective layer, e.g., green and blue light.

[0082]

[0087] In some embodiments, a second epitaxial layer 220 is bonded on top of the first epitaxial layer 210 through a transparent bonding layer 216. In one approach, the second epitaxial layer 220 is grown on a separate substrate (called an epitaxial substrate). After bonding, the epitaxial substrate is then removed, for example by laser lift-off or chemical wet etching, leaving the structure shown in FIG. 2A.

[0083]

[0088] In some embodiments, the transparent bonding layer 216 is made of spin-on glass (SOG), a transparent plastic (resin) such as the bonding adhesive Micro Resist BCL-1200, or SiO2. The thickness of the transparent bonding layer 216 is about 0.1 μm to about 5 μm.

[0084]

[0089] In some embodiments, the second epitaxial layer 220 is for the formation of green micro-LEDs. Examples of green LED epitaxial structures include III-V nitride epitaxial structures, III-V arsenide epitaxial structures, III-V phosphide epitaxial structures, and III-V antimonide epitaxial structures. In some cases, the thin films in the green LED epitaxial layer 220 can include a layer of P-type GaN / InGaN light emitting layer / N-type GaN. In some embodiments, P-type is typically Mg-doped, and N-type is typically Si-doped. In some examples, the thickness of the second epitaxial layer 220 is about 0.3 μm to about 5 μm.

[0085]

[0090] In some embodiments, prior to bonding, an ITO layer 218 is deposited on the second epitaxial layer 220. After bonding, the ITO layer 218 is between the transparent bonding layer 216 and the second epitaxial layer 220. In some embodiments, the thickness of the ITO layer 218 is from about 0.01 μm to about 1 μm.

[0086]

[0091] In some embodiments, another ITO layer 222 is deposited on top of the second epitaxial layer 220 before any bonding process with the next epitaxial layer. In some embodiments, the thickness of the ITO layer 218 is from about 0.01 μm to about 1 μm.

[0087]

[0092] In some embodiments, a third reflective layer 224 is deposited on the ITO layer 222 before any bonding process with the next epitaxial layer. In some cases, the thickness of the reflective layer 224 is about 0.1 μm to about 5 μm. In some embodiments, the reflective layer 224 includes a DBR structure. For example, the reflective layer 224 is formed from multiple layers of alternating or different materials with various refractive indices. In some cases, each layer boundary of the DBR structure causes partial reflection of light waves. The reflective layer 224 can be used to reflect some selected wavelengths, for example, blue light. In some embodiments, the reflective layer 224 is made from multiple layers of SiO2 and Ti3O5. By varying the thickness and number of each layer of SiO2 and Ti3O5, selective reflection or transmission of different wavelengths of light can be formed.

[0088]

[0093] In one example, the following DBR structure shown in Table 2 is used to reflect blue light from a blue light LED.

[0089] [Table 2]

[0090]

[0095] In some embodiments, the reflective layer 224 of the blue light LED structure has low absorptivity (e.g., 5% or less) for light generated by the different layers of the tri-color LED device 100. In some embodiments, the reflective layer 224 of the blue light LED structure has high reflectivity (e.g., 95% or more) for light generated above the current reflective layer, e.g., blue light.

[0091]

[0096] In some embodiments, a third epitaxial layer 230 is bonded on top of the second epitaxial layer 220 through a transparent bonding layer 226. In one approach, the third epitaxial layer 230 is grown on a separate substrate (called an epitaxial substrate). After bonding, the epitaxial substrate is then removed, for example by laser lift-off or chemical wet etching, leaving the structure shown in FIG. 2A.

[0092]

[0097] In some embodiments, the transparent bonding layer 226 is made of spin-on glass (SOG), a transparent plastic (resin) such as the bonding adhesive Micro Resist BCL-1200, or SiO2. The thickness of the transparent bonding layer 226 is about 0.1 μm to about 5 μm.

[0093]

[0098] In some embodiments, the third epitaxial layer 230 is for the formation of blue micro-LEDs. Examples of blue LED epitaxial structures include III-V nitride epitaxial structures, III-V arsenide epitaxial structures, III-V phosphide epitaxial structures, and III-V antimonide epitaxial structures. In some cases, the thin films in the blue LED epitaxial layer 230 can include a layer of P-type GaN / InGaN light emitting layer / N-type GaN. In some embodiments, P-type is typically Mg-doped, and N-type is typically Si-doped. In some examples, the thickness of the third epitaxial layer 230 is about 0.3 μm to about 5 μm.

[0094]

[0099] In some embodiments, an ITO layer 228 is deposited on the third epitaxial layer 230 prior to bonding. After bonding, the ITO layer 228 is between the transparent bonding layer 226 and the third epitaxial layer 230. In some embodiments, the thickness of the ITO layer 228 is from about 0.01 μm to about 1 μm.

[0095]

[0100] In some embodiments, another ITO layer 232 is deposited on top of the third epitaxial layer 230. In some embodiments, the thickness of the ITO layer 232 is from about 0.01 μm to about 1 μm.

[0096]

[0101] 2B is a cross-sectional view of a tri-color coaxial LED device 250 after some fabrication processes, according to some embodiments. More specifically, FIG. 2B further illustrates the tri-color coaxial LED device 250 after some additional fabrication processes, particularly patterning of the multi-layer structure 200.

[0097]

[0102] In some embodiments, through dry and wet etching, a tri-color LED structure is formed, with the axes of the different color LED structures aligned perpendicular to each other. In some embodiments, the different color LED structures share the same axis. In some embodiments, the different color LED structures form a pyramid-like shape or a trapezoidal cross-sectional shape, with the bottom LED structure having the longest lateral dimension and the top LED structure having the shortest lateral dimension. Each layer has a narrower width or smaller area compared to the layer below it, where the width or area is measured by the dimension of a plane parallel to the surface of the substrate 202. In some embodiments, the lower layer, such as the metal (bonding) layer 206, has a lateral dimension of about 1 μm to about 500 μm. The pyramid-like shape improves the electronic connection between the individual LED structures and to the electrodes, simplifying the fabrication process. For example, electrode connections are exposed at each layer for easy connection.

[0098]

[0103] In some embodiments, the cross-sectional aspect ratio of the layers of the tri-color LED device remains approximately the same when the lateral dimensions of the same layer are changed. For example, if the lateral dimension of the patterned epitaxial layer is 5 μm, the thickness of the patterned epitaxial layer is less than 1 μm. In another example, if the lateral dimension of the same patterned epitaxial layer is increased, the thickness of the patterned epitaxial layer is increased accordingly to maintain the same aspect ratio. In some embodiments, the cross-sectional aspect ratio of the epitaxial layer and other layers is less than 1 / 5 in thickness / width.

[0099]

[0104] The shape of the LED device is not limited, and in some other embodiments, the cross-sectional shape of the tri-color coaxial LED device can take other shapes, such as an inverted trapezoid, a semi-ellipse, a rectangle, a parallelogram, a triangle, or a hexagon.

[0100]

[0105] 1A are formed, the top ITO layer 232 on top of the third epitaxial layer 230 is patterned using photolithography and etching. In some cases, the etching method used to pattern is dry etching, such as inductively coupled plasma (ICP) etching, or wet etching with an ITO etching solution. In some embodiments, the same patterning method can be applied to all other ITO layers in the structure 200, including ITO layers 212, 218, 222, 228.

[0101]

[0106] In some embodiments, the blue LED epitaxial layer 230 and the green LED epitaxial layer 220 are patterned using photolithography and etching. In some cases, the etching method used for patterning is dry etching, such as inductively coupled plasma (ICP) etching, using Cl2 and BCl3 etching gases.

[0102]

[0107] In some embodiments, the transparent bonding layer, including 216 and 226, is patterned using photolithography and etching. In some cases, the etching method used for patterning is dry etching, such as inductively coupled plasma (ICP) etching, using CF4 and O2 etching gases.

[0103]

[0108] In some embodiments, the reflective layers, including 208, 214, and 224, are patterned using photolithography and etching. In some cases, the etching method used to pattern the reflective layers, particularly the DBR layers, is dry etching, such as inductively coupled plasma (ICP) etching with CF4 and O2 etching gases, or ion beam etching (IBE) with Ar gas.

[0104]

[0109] In some embodiments, the red epitaxial layer 210 is patterned using photolithography and etching. In some cases, the etching method used for patterning is dry etching, such as inductively coupled plasma (ICP) etching, using Cl2 and HBr etching gases.

[0105]

[0110] In some embodiments, the metal (bonding) layer 206 is patterned using photolithography and etching. In some cases, the etching method used for patterning is dry etching using Cl2 / BCl3 / Ar etching gas, such as inductively coupled plasma (ICP) etching or ion beam etching (IBE) using Ar gas.

[0106]

[0111] In some embodiments, after the LED device structure is patterned, an insulating layer 252 is deposited on the surface of the patterned LED device structure, including all of the patterned layers, sidewalls, and exposed substrate. In some embodiments, the insulating layer 252 is made of SiO2 and / or Si3N4. In some embodiments, the insulating layer 252 is made of TiO2. In some embodiments, the insulating layer 252 is formed using a composition similar to SiO2 after curing a layer such as SOG at high temperature. In some embodiments, the insulating layer 252 is made of a material that has a similar thermal coefficient as the layer below the insulating layer 252.

[0107]

[0112] In some embodiments, the insulating layer 252 is patterned using photolithography and etching to expose the electrode contact areas, and in some cases the etching method used for patterning is dry etching using CF4 and O2, e.g., inductively coupled plasma (ICP) etching.

[0108]

[0113] In some embodiments, the anode metal pad 254 is deposited by evaporation at a suitable location of the patterned LED structure, such as on one side, to cover the red LED structure, the green LED structure, and the blue LED structure. In some embodiments, the anode metal pad 254 is made to connect to the bottom metal (bonding) layer 206 of the red LED epitaxial layer 210, the bottom conductive ITO layer 218 of the green LED epitaxial layer 220, and the bottom conductive ITO layer 228 of the blue LED epitaxial layer 230. The anode metal pad 254 is also electrically connected to the integrated circuit including the pixel driving circuit 204 on the substrate 202 through the metal (bonding) layer 206.

[0109]

[0114] In some embodiments, separate cathode metal pads are disposed and connected to each of the red, green, and blue LED epitaxial layers. For example, a cathode metal pad 256 is deposited on one side of the patterned LED structure and connects to the red LED epitaxial layer 210 through the conductive ITO layer 212 on top of the red LED epitaxial layer 210. In some embodiments, a cathode metal pad 258 is deposited on one side of the patterned LED structure and connects to the green LED epitaxial layer 220 through the conductive ITO layer 222 on top of the green LED epitaxial layer 220. In some embodiments, a cathode metal pad 260 is deposited on one side of the patterned LED structure and connects to the blue LED epitaxial layer 230 through the conductive ITO layer 232 on top of the blue LED epitaxial layer 230.

[0110]

[0115] In some embodiments, the external quantum efficiency of the red LED structure in the tri-color LED device is about 0.5%-5%. In some embodiments, the external quantum efficiency of the green LED structure in the tri-color LED device is about 2%-10%. In some embodiments, the external quantum efficiency of the blue LED structure in the tri-color LED device is about 5%-15%. In some embodiments, the external quantum efficiency of each color LED structure is measured when the contributions of all associated layers, such as reflective layers, bonding layers, ITO layers, and insulating layers, in addition to the LED structure, are counted.

[0111]

[0116] In some embodiments, the external quantum efficiency of the tri-color LED device 250 is about 20% or greater. In some embodiments, the external quantum efficiency of the tri-color LED device is measured when the effects of all layers, such as the reflective layer, bonding layer, ITO layer, and insulating layer, in addition to the LED structure, are counted.

[0112]

[0117] Various design aspects of the tri-color coaxial LED system 250, such as layer dimensions (e.g., width, length, height, and cross-sectional area of ​​each layer), electrode dimensions, size, shape, spacing, and arrangement of the two or more LED structural layers, bonding layers, reflective layers, and conductive layers, as well as the configuration between the integrated circuits, pixel driving circuits, and electrical connections, are selected (e.g., optimized using a cost or performance function) to obtain desired LED characteristics, such as size, materials, cost, fabrication efficiency, luminous efficiency, power consumption, directivity, luminance intensity, luminance flux, color, spectrum, and spatial radiation pattern.

[0113]

[0118] 3 is a circuit diagram illustrating a matrix of single pixel tri-color LED devices 300 according to some embodiments. The circuit of FIG. 3 includes three pixel drive circuits 302, 304, and 306 and three tri-color coaxial LED devices 308, 310, and 312.

[0114]

[0119] In some embodiments, the display panel includes a plurality of pixels, such as millions of pixels, each pixel including a tri-color LED device structure. In some embodiments, the LED device structure can be a micro-LED. Micro-LEDs typically have lateral dimensions of 50 micrometers (μm) or less, and can have lateral dimensions of less than 10 μm, or even only a few μm.

[0115]

[0120] In some embodiments, a pixel drive circuit, such as 302, includes several transistors and capacitors (not shown in FIG. 3). The transistors include a drive transistor connected to a voltage supply and a control transistor configured with a gate connected to a scan signal bus line. The capacitor includes a reservoir capacitor used to maintain the gate voltage of the drive transistor while the scan signal is setting other pixels.

[0116]

[0121] In this example, each of the three tri-color LED devices, e.g., 308, has its own integrated circuit (IC) pixel drive circuit 302. The single pixel tri-color LED device 308 can be viewed as three individual LEDs with different colors connected in parallel. For example, the red LED 318, the green LED 316, and the blue LED 314 in the same tri-color LED device 308 are connected to the same IC pixel drive circuit 302 via a shared P electrode pad or anode, such as metal pad 254 in FIG. 2B.

[0117]

[0122] In some embodiments, the red LED, green LED, and blue LED in the same tri-color LED device 308 are each connected to a separate N-electrode pad or cathode. For example, the red LED is connected to an N-electrode 336, such as metal pad 256 in FIG. 2B. The green LED is connected to an N-electrode 334, such as metal pad 258 in FIG. 2B. The blue LED is connected to an N-electrode 332, such as metal pad 260 in FIG. 2B.

[0118]

[0123] In some embodiments, all red LEDs from different tri-color LED devices, e.g., 318, 324, and 330, are connected to the same common N-electrode 336. All green LEDs from different tri-color LED devices, e.g., 316, 322, and 328, are connected to the same common N-electrode 334. All blue LEDs from different tri-color LED devices, e.g., 314, 320, and 326, are connected to the same common N-electrode 332. The use of a common electrode simplifies the fabrication process and reduces the area of ​​the LED device, especially the footprint of the electrodes.

[0119]

[0124] FIG. 4 is a flow diagram illustrating a method 400 for making a tri-color coaxial LED device according to some embodiments.

[0120]

[0125] The operations (eg, steps) of method 400 may be performed corresponding to the embodiments described in Figures 1, 2A, 2B, and 3 above.

[0121]

[0126] The method 400 includes providing a substrate 402. In some embodiments, pixel driving circuitry is formed on the substrate.

[0122]

[0127] The method 400 also includes step 404 of fabricating a first LED structure layer laminated on the top of the substrate. In some embodiments, the first LED structure layer includes a first epitaxial structure. In some embodiments, the first LED structure layer is bonded to the substrate by a first bonding layer. In some embodiments, before bonding the substrate and the first LED structure layer, a first reflective layer is deposited on the surface of the LED structure layer facing the substrate. And in some cases, after bonding, the first reflective layer is between the first bonding layer and the first epitaxial structure. In some embodiments, the first bonding layer is a conductive layer at the bottom of the first LED structure layer, and the first bonding layer is electrically connected to both the pixel driving circuit and the bottom of the first LED structure layer. In some embodiments, a first top conductive layer is deposited on the top of the first LED structure layer to electrically connect to the top and common electrodes of the first LED structure layer.

[0123]

[0128] The method 400 further includes a step 406 of fabricating a second LED structure layer stacked on the top of the first LED structure layer. In some embodiments, the second LED structure layer includes a second epitaxial structure. In some embodiments, the second LED structure is bonded to the first LED structure by a second bonding layer. In some embodiments, a second reflective layer is deposited on the surface of the first LED structure layer facing the second LED structure layer before bonding the first LED structure layer and the second LED structure layer. And in some cases, the second reflective layer is between the first upper conductive layer and the second bonding layer after bonding. In some embodiments, a second lower conductive layer is deposited on the bottom of the second LED structure layer, and the second lower conductive layer is electrically connected to both the pixel driving circuit and the bottom of the second LED structure layer. In some embodiments, a second upper conductive layer is deposited on the top of the second LED structure layer and electrically connects to the top and common electrodes of the second LED structure layer.

[0124]

[0129] The method 400 further includes step 408 of fabricating a third LED structure layer stacked on the top of the second LED structure layer. In some embodiments, the third LED structure layer includes a third epitaxial structure. In some embodiments, the third LED structure is bonded to the second LED structure by a third bonding layer. In some embodiments, before bonding the second LED structure layer and the third LED structure layer, a third reflective layer is deposited on the surface of the second LED structure layer facing the third LED structure layer. And in some cases, after bonding, the third reflective layer is between the second upper conductive layer and the third bonding layer. In some embodiments, a third lower conductive layer is deposited on the bottom of the third LED structure layer, and the third lower conductive layer is electrically connected to both the pixel driving circuit and the bottom of the third LED structure layer. In some embodiments, the third upper conductive layer is deposited on the top of the third LED structure layer and electrically connects to the top and common electrodes of the third LED structure layer.

[0125]

[0130] In some embodiments, the first LED structure layer, the second LED structure layer, and the third LED structure layer substantially overlap each other laterally to form an optical path that combines light emitted from the first LED structure layer, the second LED structure layer, and the third LED structure layer.

[0126]

[0131] The method 400 further includes a step 410 of patterning the layers formed from the above steps 402-408 by photolithography and etching to form three LEDs stacked directly together.

[0127]

[0132] The method 400 further includes a step 412 of depositing an insulating layer over the exposed structures formed from steps 402-410 above, and etching the insulating layer to cover the electrode contact pads.

[0128]

[0133] Method 400 further includes step 414 of depositing electrode contact pads on the surface of the structure formed from steps 402-412. In some embodiments, an anode metal contact pad is deposited to electrically connect to the bottom conductive layer and pixel driving circuitry of each of the first, second, and third LED structural layers. In some embodiments, a first cathode metal contact pad is deposited to electrically connect to the top conductive layer of the first LED structural layer. In some embodiments, a second cathode metal contact pad is deposited to electrically connect to the top conductive layer of the second LED structural layer. In some embodiments, a third cathode metal contact pad is deposited to electrically connect to the top conductive layer of the third LED structural layer.

[0129]

[0134] Further embodiments include various subsets of the above embodiments, including the embodiments of Figures 1, 2A, 2B, 3, and 4, combined or otherwise rearranged in various embodiments.

[0130]

[0135] 5 is a top view of a micro-LED display panel 500 according to some embodiments. The display panel 500 includes a data interface 510, a control module 520, and a pixel area 550. The data interface 510 receives data defining an image to be displayed. The source and format of this data can vary depending on the application. The control module 520 receives the input data and converts it into a form suitable for driving pixels of the display panel. The control module 520 may include digital logic and / or state machines to convert the received format into a format suitable for the pixel area 550, a scan controller including shift registers or other types of buffers and memories to store and transfer data, digital-to-analog converters and level shifters, and clock circuits.

[0131]

[0136] The pixel area 550 includes an array of pixels. The pixels include micro LEDs, such as tri-color coaxial LEDs 534 integrated with pixel drive circuits as described above. In this example, the display panel 500 is a color RGB display panel. It includes red, green, and blue pixels. Within each pixel, the tri-color coaxial LEDs 534 are controlled by a pixel drive circuit. The pixels communicate with a supply voltage (not shown) and ground via ground pad 536, as well as control signals, according to the previously illustrated embodiments. Although not shown in FIG. 5, the p-electrode of the tri-color coaxial LED 534 and the output of the drive transistor are positioned within the LED 534 and are electrically connected by a bonding metal layer, such as metal layer 204 of FIG. 2A. The LED current drive signal connection (between the p-electrode of the LED and the output of the pixel drive circuit), the ground connection (between the n-electrode and system ground), the supply voltage Vdd connection (between the source of the pixel drive circuit and system Vdd), and the control signal connection to the gate of the pixel drive circuit are made according to various embodiments.

[0132]

[0137] 5 is merely a representative diagram. Other designs will be apparent. For example, the colors need not be red, green, and blue. Nor need they be arranged in columns or stripes. As an example, away from the square matrix arrangement of pixels shown in FIG. 5, a hexagonal matrix arrangement of pixels can be used to form the display panel 500.

[0133]

[0138] In some applications, a fully programmable rectangular array of pixels is not necessary. Other designs of display panels with a wide variety of shapes and displays can also be formed using the device structures described herein. One class of examples is specialized applications including signs and automobiles. For example, multiple pixels can be arranged in a star or spiral shape to form a display panel, and different patterns can be generated on the display panel by turning LEDs on and off. Another specialized example is automobile headlights and smart lighting, where certain pixels are grouped together to form various lighting shapes, and each group of LEDs can be turned on and off or otherwise adjusted by individual pixel drive circuits.

[0134]

[0139] Even the lateral arrangement of the devices within each pixel can be varied. In Figures 1, 2A and 2B, the LEDs and pixel drive circuits are arranged vertically, i.e., each LED is located on top of its corresponding pixel drive circuit. Other arrangements are possible. For example, the pixel drive circuit can be located "behind", "in front" or "to the side" of the LEDs.

[0135]

[0140] Different types of display panels can be made. For example, the resolution of a display panel can typically range from 8x8 to 3840x2160. Common display resolutions include QVGA with a resolution of 320x240 and an aspect ratio of 4:3, XGA with a resolution of 1024x768 and an aspect ratio of 4:3, D with a resolution of 1280x720 and an aspect ratio of 16:9, FHD with a resolution of 1920x1080 and an aspect ratio of 16:9, UHD with a resolution of 3840x2160 and an aspect ratio of 16:9, and 4K with a resolution of 4096x2160. There can also be a wide variety of pixel sizes ranging from submicron to over 100mm. The size of the total display area can also vary widely, from as little as a diagonal of tens of microns or less to over hundreds of inches.

[0136]

[0141] Different applications also have different requirements for optical brightness. Example applications include direct view display screens, home / office projectors and portable electronics such as smartphones, laptops, wearable electronics, AR and VR glasses, as well as light engines for retinal projection. Power consumption can vary from a few milliwatts for retinal projectors to several kilowatts for large screen outdoor displays, projectors, and smart car headlights. In terms of frame rate, due to the fast response (nanoseconds) of inorganic LEDs, the frame rate can be KHz or even MHz at low resolution.

[0137]

[0142] Further embodiments include various subsets of the above embodiments, including the embodiments of Figures 1, 2A, 2B and 3-5, combined or otherwise rearranged with various other embodiments.

[0138]

[0143] Although the detailed description includes many details, these should not be interpreted as limitations on the scope of the present invention, but merely as illustrative of different examples and aspects of the present invention. It should be understood that the scope of the present invention includes other embodiments not described in detail above. For example, the above-described techniques can also be applied to the integration of functional devices other than LEDs with control circuits other than pixel drive circuits. Examples of non-LED devices include vertical cavity surface emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuits include current drive circuits, voltage drive circuits, transimpedance amplifiers, and logic circuits.

[0139]

[0144] The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the embodiments described herein and variations thereof. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Thus, the present disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the following claims and the principles and novel features disclosed herein.

[0140]

[0145] Features of the present invention may be implemented in, using, or with the aid of a computer program product, such as a storage medium or computer-readable storage medium having instructions stored thereon that can be used to program a processing system to perform any of the features presented herein. The storage medium may include high-speed random access memory, such as, but not limited to, DRAM, SRAM, DDR RAM, or other random access solid-state memory devices, and may include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices. The memory optionally includes one or more storage devices located remotely from the CPU. The memory, or alternatively, the non-volatile memory devices within the memory, include non-transitory computer-readable storage media.

[0141]

[0146] When stored on any machine-readable medium, features of the present invention may be embodied in software and / or firmware to control the hardware of a processing system and to enable the processing system to utilize the results of the present invention and interact with other mechanisms. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0142]

[0147] Although the terms "first," "second," etc. may be used herein to describe various elements, it will be understood that these elements are not to be limited by these terms. These terms are used only to distinguish one element from another.

[0143]

[0148] The terms used herein are for the purpose of describing particular embodiments only and are not intended to limit the scope of the claims. When used in the description of the embodiments and in the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the term "and / or," when used herein, refers to and includes any and all possible combinations of one or more of the associated listed items. It will be further understood that the terms "comprise" and / or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0144]

[0149] As used herein, the term "if" may be interpreted to mean "when" a stated precondition is true or "being" true or "in response to determining" that it is true or "according to determining" that it is true or "in response to detecting" that it is true, depending on the context. Similarly, the phrase "if it is determined [that the stated precondition is true]" or "if [the stated precondition is true]" or "when [the stated precondition is true]" may be interpreted to mean "when" a stated precondition is true or "in response to determining" that it is true or "according to determining" that it is true or "when" it is detected as true or "in response to detecting" that it is true, depending on the context.

[0145]

[0150] The above description, for purposes of illustration, has been set forth with reference to specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or to limit the scope of the claims to the precise form disclosed. Many modifications and variations are possible in light of the above teachings. The embodiments were chosen and described in order to best explain the principles of operation and practical application, thereby enabling others skilled in the art to do so.

Claims

1. 1. A single pixel multicolor micro light emitting diode (LED) device for a display panel, comprising: A substrate; two or more LED structure layers, including a first LED structure layer laminated on the substrate, and a second LED structure layer laminated on the first LED structure layer; the first LED structure layer and the second LED structure layer substantially overlap each other laterally to form an optical path that combines light emitted from the first LED structure layer and light emitted from the second LED structure layer, forming a single pixel multicolor micro-LED device.

2. The two or more LED structure layers include: a third LED structure layer laminated on the second LED structure layer; 2. The single pixel multi-color micro-LED device of claim 1, wherein the third LED structure layer substantially overlaps laterally with the first LED structure layer and the second LED structure layer to form the optical path that further couples light emitted from the third LED structure layer.

3. a first bonding layer between the substrate and the first LED structure layer; a second bonding layer between the first LED structure layer and the second LED structure layer; a third bonding layer between the second LED structure layer and the third LED structure layer; 3. The single pixel multi-color micro-LED device of claim 2 further comprising:

4. the first bonding layer is about 0.1 μm to about 3 μm; the second bonding layer is about 0.1 μm to about 5 μm; the third bonding layer is about 0.1 μm to about 5 μm; 4. The single pixel multi-color micro-LED device of claim 3, wherein the second and third bonding layers are transparent.

5. 5. The single pixel multi-color micro LED device of claim 2, wherein the substrate supports a pixel driving circuit, and each of the first, second and third LED structure layers is electrically connected to the pixel driving circuit.

6. 6. The single pixel multi-color micro-LED device of claim 5, wherein the pixel drive circuit comprises a thin film transistor pixel drive circuit or a silicon CMOS drive circuit.

7. a first reflective layer between the substrate and the first LED structure layer; a second reflective layer between the first LED structure layer and the second LED structure layer; a third reflective layer between the second LED structure layer and the third LED structure layer; 7. The single pixel multicolor micro-LED device of claim 2, further comprising:

8. At least one of the first, second, and third reflective layers has a distributed Bragg reflector (DBR) structure; 8. The single pixel multi-color micro-LED device of claim 7, wherein each of the first, second and third reflective layers is from about 0.1 μm to about 5 μm.

9. a first light emitted from the first LED structure layer propagates through the second LED structure layer and the third LED structure layer; 9. The single pixel multi-color micro LED device of claim 2, wherein the second light emitted from the second LED structure layer propagates through the third LED structure layer.

10. Each of the first, second, and third LED structure layers comprises: an epitaxial structure forming an LED within each of the LED structure layers; a bottom conductive layer electrically connected to a bottom portion of the LED; a top conductive layer electrically connected to a top of the LED; Including, 10. The single pixel multi-color micro-LED device of claim 5, wherein the lower conductive layer is also electrically connected to the pixel driving circuit, and the upper conductive layer is also electrically connected to a common electrode.

11. 11. The single pixel multi-color micro-LED device of claim 10, wherein the epitaxial structure of each of the first, second, and third LED structure layers is selected from one or more structures from the group consisting of a III-V nitride epitaxial structure, a III-V arsenide epitaxial structure, a III-V phosphide epitaxial structure, and a III-V antimonide epitaxial structure.

12. 12. The single pixel multi-color micro-LED device of claim 10 or 11, wherein the lower conductive layer and the upper conductive layer of each of the first, second, and third LED structure layers comprise an indium tin oxide (ITO) layer, each of the ITO layers being about 0.01 μm to about 1 μm thick.

13. an anode metal contact pad electrically connected to the lower conductive layer of each of the first, second, and third LED structure layers; a first cathode metal contact pad electrically connected to the top conductive layer of the first LED structure layer; a second cathode metal contact pad electrically connected to the top conductive layer of the second LED structure layer; a third cathode metal contact pad electrically connected to the top conductive layer of the third LED structure layer; 13. The single pixel multicolor micro-LED device of claim 10, further comprising:

14. 14. The single pixel multi-color micro-LED device of claim 13, wherein the anode and cathode metal contact pads comprise one or more metals selected from the group consisting of aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, indium tin oxide, palladium, indium, and titanium.

15. 15. The single pixel multi-color micro LED device of claim 10, wherein the epitaxial structure of each of the first, second and third LED structure layers is from about 0.3 μm to about 5 μm.

16. 16. The single pixel multi-color micro LED device according to any one of claims 10 to 15, wherein the LEDs of different LED structure layers generate light of different wavelengths.

17. 17. The single pixel multi-color micro-LED device according to any one of claims 10 to 16, wherein the LEDs of different LED structure layers generate light of different visible wavelengths.

18. 18. The single pixel multi-color micro-LED device according to any one of claims 10 to 17, wherein the LEDs of different LED structure layers are ultraviolet, blue, green, orange, red or infrared micro-LEDs.

19. the first LED structure layer forms a red light LED; the second LED structure layer forms a green light LED; 19. The single pixel multicolor micro LED device of claim 2, wherein the third LED structure layer forms a blue light LED.

20. 20. The single pixel multicolor micro-LED device of any one of claims 1 to 19, wherein the longest dimension of the single pixel multicolor micro-LED device is from about 1 μm to about 500 μm.

21. 21. The single pixel multicolor micro LED device of claim 1, wherein the single pixel multicolor micro LED device has a cross-sectional shape of a pyramid with a lower layer having a longest lateral dimension and an upper layer having a shortest lateral dimension.

22. 22. The single pixel multicolor micro LED device of claim 1, wherein the single pixel multicolor micro LED device has an external quantum efficiency of 20% or more.

23. A micro LED display chip, comprising: a substrate supporting an array of pixel driving circuits; an array of single pixel multicolor miniature light emitting diode (LED) devices; Including, Each of the single pixel multi-color LED devices comprises: two or more LED structure layers stacked on top of the substrate and pixel driving circuit, with a bonding layer between adjacent LED structure layers, each of the LED structure layers further including an epitaxial structure forming a micro-LED configured to generate light of one color; the array of single pixel multi-color LEDs is electrically connected to the array of pixel driving circuits and to a common electrode; the two or more LED structure layers laterally overlap one another to form a light propagation path through the micro-LEDs directly stacked together; A micro-LED display chip, wherein the micro-LEDs of different LED structure layers generate light of different wavelengths.

24. 24. The micro-LED display chip of claim 23, wherein the common electrode comprises a separate common electrode structure for all of the micro-LEDs in the same LED structure layer that produce the same color.

25. 1. A method for making a single pixel tri-color micro light emitting diode (LED) device for a display panel, comprising: Providing a substrate; Producing a first LED structure layer laminated on top of the substrate; preparing a second LED structure layer laminated on top of the first LED structure layer; preparing a third LED structure layer laminated on top of the second LED structure layer; Including, 13. A method for making a single pixel tri-color micro-LED device, wherein the first LED structure layer, the second LED structure layer, and the third LED structure layer substantially overlap each other laterally to form an optical path that combines light emitted from the first LED structure layer, the second LED structure layer, and the third LED structure layer.

26. bonding the substrate and the first LED structure layer together with a first bonding layer; bonding the first LED structure layer and the second LED structure layer together with a second bonding layer; bonding the second LED structure layer and the third LED structure layer together with a third bonding layer; 26. The method of making the single pixel tri-color micro-LED device of claim 25, further comprising:

27. 27. The method of making a single pixel tri-color micro-LED device of claim 26, wherein the first bonding layer comprises one or more bonding structures selected from the group consisting of Au-Au bonds, Au-Sn bonds, Au-In bonds, Ti-Ti bonds, and Cu-Cu bonds.

28. 28. The method of making a single pixel tri-color micro-LED device of claim 26 or 27, wherein each of the second bonding layer and the third bonding layer comprises one or more bonding materials selected from the group consisting of transparent plastic (resin), SiO2, spin-on glass (SOG), and bonding adhesive Micro Resist BCL-1200.

29. the first bonding layer is about 0.1 μm to about 3 μm; the second bonding layer is about 0.1 μm to about 5 μm; the third bonding layer is about 0.1 μm to about 5 μm; The method for making a single pixel tri-color micro-LED device according to any one of claims 26 to 28, wherein the second and third bonding layers are transparent.

30. forming a first reflective layer on the first LED structure layer before bonding the substrate and the first LED structure layer; Before bonding the first LED structure layer and the second LED structure layer, a second reflective layer is formed on the first LED structure layer; Before bonding the second LED structure layer and the third LED structure layer, a third reflective layer is formed on the second LED structure layer; 30. A method for making the single pixel tri-color micro-LED device of any one of claims 26 to 29, further comprising:

31. forming a distributed Bragg reflector (DBR) structure in each of the first, second, and third reflective layers; 31. The method of making a single pixel tri-color micro-LED device of claim 30, wherein each of the first, second, and third reflective layers is from about 0.1 μm to about 5 μm.

32. 32. The method of fabricating a single pixel tri-color micro LED device according to any one of claims 25 to 31, wherein the substrate supports a pixel driving circuit, and each of the first, second and third LED structure layers is electrically connected to the pixel driving circuit.

33. For each of the first, second, and third LED structure layers including an epitaxial structure, patterning the epitaxial structure to form LEDs within each of the LED structure layers; depositing a bottom conductive layer electrically connecting to a bottom portion of the LED; depositing a top conductive layer electrically connecting to a top of the LED; Further comprising:

33. The method of making a single pixel tri-color micro-LED device of claim 32, wherein the bottom conductive layer is also electrically connected to the pixel driving circuitry and the top conductive layer is also electrically connected to a common electrode.

34. 34. The method of making a single pixel three color micro LED device of claim 33, wherein the epitaxial structure of each of the first, second, and third LED structure layers is selected from one or more structures from the group consisting of a III-V nitride epitaxial structure, a III-V arsenide epitaxial structure, a III-V phosphide epitaxial structure, and a III-V antimonide epitaxial structure.

35. 35. The method of making a single pixel tri-color micro-LED device of claim 33 or 34, wherein the lower conductive layer and the upper conductive layer of each of the first, second, and third LED structure layers comprise indium tin oxide (ITO) layers, each of the ITO layers being about 0.01 μm to about 1 μm.

36. depositing an anode metal contact pad electrically connecting to the bottom conductive layer of each of the first, second, and third LED structure layers; depositing a first cathode metal contact pad electrically connecting to the top conductive layer of the first LED structure layer; depositing a second cathode metal contact pad electrically connecting to the top conductive layer of the second LED structure layer; depositing a third cathode metal contact pad electrically connecting to the top conductive layer of the third LED structure layer; 36. A method for making the single pixel tri-color micro-LED device of any one of claims 32 to 35, further comprising:

37. 37. The method for making a single pixel tri-color micro LED device according to any one of claims 33 to 36, wherein the epitaxial structure of each of the first, second and third LED structure layers is from about 0.3 μm to about 5 μm.

38. The method for making a single pixel tri-color micro-LED device according to any one of claims 33 to 37, wherein the LEDs of different LED structure layers generate light of different wavelengths.

39. The method for making a single pixel tri-color micro-LED device according to any one of claims 33 to 38, wherein the LEDs in different LED structure layers generate light of different visible wavelengths.

40. The method for making a single pixel tri-color micro-LED device according to any one of claims 33 to 39, wherein the LEDs of different LED structure layers are ultraviolet, blue, green, orange, red or infrared micro-LEDs.

41. patterning the first LED structure layer to form a red light LED; patterning the second LED structure layer to form a green light LED; patterning the third LED structure layer to form a blue light LED; 41. A method for making the single pixel tri-color micro-LED device of any one of claims 25 to 40, further comprising:

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