Substrate processing method and substrate processing apparatus

Abstract

To provide a technique that can reduce the rate of collapse of a pattern at the peripheral edge portion of a substrate.SOLUTION: A substrate processing method includes a holding step, a liquid processing step, and a drying step. In the holding step, a substrate is held. In the liquid processing step, a processing liquid is supplied to a first main surface Wa of a substrate W. In the drying liquid supplying step, after the liquid processing step, the substrate W is rotated and a drying liquid having a lower surface tension than the processing liquid is supplied to the first main surface Wa of the substrate W while a second main surface Wb of the substrate W is heated. During at least a partial time of the drying liquid supplying step, the drying liquid is discharged from a first discharge port 3ia of a discharge unit 3 and set on a center portion of the first main surface W of the substrate W while the drying liquid is discharged from a second discharge port 3ib of the discharge unit 3 and set on the peripheral edge portion of the first main surface Wa of the substrate W. In the drying step, after the drying liquid supplying step, the drying liquid on the first main surface Wa of the substrate W is evaporated to dry the substrate W.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Conventionally, single-wafer substrate processing apparatuses for processing substrates have been disclosed (for example, Patent Document 1). In Patent Document 1, the substrate processing apparatus supplies a rinsing liquid to the substrate, then supplies isopropyl alcohol, which has a lower surface tension than the rinsing liquid, to the substrate, and then dries the substrate. This prevents the pattern on the substrate from collapsing during drying. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-23182 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, with the technique of Patent Document 1, the rate of pattern collapse at the periphery of the substrate was still high.

[0005] Therefore, an object of the present disclosure is to provide a technique capable of reducing the rate of pattern collapse at the peripheral edge of a substrate. [Means for solving the problem]

[0006] A first aspect is a substrate processing method comprising: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface; a liquid processing step of supplying a processing liquid to the first main surface of the substrate; a drying liquid supplying step of supplying a drying liquid having a lower surface tension than the processing liquid to the first main surface of the substrate while rotating the substrate and heating the second main surface of the substrate after the liquid processing step; and a drying step of evaporating the drying liquid on the first main surface of the substrate to dry the substrate after the drying liquid supplying step, wherein during at least a portion of the drying liquid supplying step, the drying liquid is discharged from a first discharge port of a discharge unit to land on a central portion of the first main surface of the substrate, while the drying liquid is discharged from a second discharge port of the discharge unit to land on a peripheral portion of the first main surface of the substrate.

[0007] A second aspect is a substrate processing method according to the first aspect, wherein, in the drying process, a middle region of the first main surface of the substrate, which is located between the central portion and the peripheral portion, dries before the central portion.

[0008] A third aspect is the substrate processing method according to the first or second aspect, wherein in the drying liquid supplying step, the heated drying liquid is discharged from the first discharge port and the second discharge port.

[0009] A fourth aspect is a substrate processing method according to any one of the first to third aspects, wherein, in the drying liquid supply process, during at least a latter part of a drying liquid supply time during which the drying liquid is supplied to the first main surface of the substrate, a central flow rate of the drying liquid discharged from the first outlet is smaller than a peripheral flow rate of the drying liquid discharged from the second outlet.

[0010] A fifth aspect is a substrate processing method according to any one of the first to fourth aspects, wherein, in the drying liquid supply step, during a previous time of a drying liquid supply time during which the drying liquid is supplied to the first main surface of the substrate, a central flow rate of the drying liquid from the first outlet is greater than a peripheral flow rate of the drying liquid from the second outlet, and the peripheral flow rate at a later time that is later than the previous time is greater than the peripheral flow rate at the previous time.

[0011] A sixth aspect is the substrate processing method according to the fifth aspect, wherein the median flow rate at the latter time is smaller than the median flow rate at the former time.

[0012] A seventh aspect is the substrate processing method according to the fifth or sixth aspect, wherein the latter time is shorter than the former time.

[0013] An eighth aspect is a substrate processing method according to any one of the first to seventh aspects, wherein in the drying liquid supplying step, a heat medium is supplied to a central portion of the second main surface of the substrate to heat the substrate.

[0014] A ninth aspect is the substrate processing method according to any one of the first to eighth aspects, wherein in the drying step, a heated inert gas is supplied to a central portion of the first main surface of the substrate.

[0015] A tenth aspect is a substrate processing method according to any one of the first to ninth aspects, wherein in the drying liquid supplying process, the second main surface of the substrate is heated so that the temperature of at least a portion of the second main surface of the substrate is equal to or higher than the boiling point of the drying liquid, while the drying liquid is supplied to the first main surface of the substrate at a flow rate such that the temperature of the first main surface of the substrate is less than the boiling point.

[0016] An eleventh aspect is a substrate processing method according to any one of the first to tenth aspects, wherein, in the drying liquid supply step, the second main surface of the substrate is heated only during a latter part of a drying liquid supply time during which the drying liquid is supplied.

[0017] A twelfth aspect is a substrate processing apparatus comprising: a substrate holding unit that rotates a substrate while holding the substrate, the substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface; a discharge unit that discharges a processing liquid onto the first main surface of the substrate held by the substrate holding unit; and a substrate heating unit that heats the second main surface of the substrate held by the substrate holding unit, wherein the discharge unit has a first discharge port that discharges a drying liquid toward a central portion of the first main surface of the substrate held by the substrate holding unit, and a second discharge port that discharges the drying liquid toward a peripheral portion of the first main surface of the substrate held by the substrate holding unit. Effect of the Invention

[0018] According to the first and twelfth aspects, the rate of pattern collapse at the peripheral portion of the substrate can be reduced.

[0019] According to the second aspect, the middle region dries before the central portion in the drying process. Therefore, it is considered that after the middle region dries, the processing liquid remaining in the drying liquid on the central portion side cannot move to the peripheral portion very much. In other words, it is considered that the processing liquid with low surface tension is less likely to gather on the peripheral portion. Therefore, it is possible to reduce the collapse rate of the pattern on the peripheral portion.

[0020] According to the third aspect, in the drying liquid supplying step, a drying liquid with a high temperature can be supplied to the first main surface of the substrate. Therefore, in the subsequent drying step, the temperature of the drying liquid can be increased, and the evaporation of the drying liquid can be further promoted while reducing the surface tension. Therefore, the collapse rate of the pattern can be further reduced.

[0021] According to the fourth aspect, the rate of pattern collapse in the peripheral portion of the substrate can be further reduced.

[0022] According to the fifth aspect, the coverage of the main surface of the substrate with the drying liquid can be improved in the pre-processing. Therefore, the adhesion of particles to the first main surface of the substrate can be suppressed. In addition, since the peripheral flow rate in the post-processing is large, the collapse rate of the pattern in the peripheral portion of the substrate can be reduced.

[0023] According to the sixth aspect, the total flow rate of the drying liquid can be reduced.

[0024] According to the seventh aspect, adhesion of particles to the first main surface of the substrate can be further suppressed.

[0025] According to the eighth aspect, the substrate can be heated with a simple configuration.

[0026] According to the ninth aspect, heated inert gas is supplied to the central portion of the first main surface of the substrate, where the drying liquid evaporates last. This makes it possible to effectively advance the end point of the drying time. In other words, it is possible to effectively shorten the drying time.

[0027] According to the tenth aspect, in the drying liquid supplying step, the temperature of the first main surface of the substrate can be increased to a temperature closer to the boiling point of the drying liquid.

[0028] According to the eleventh aspect, it is possible to reduce power consumption. [Brief description of the drawings]

[0029] [Figure 1] 1 is a plan view illustrating an example of a configuration of a substrate processing apparatus. [Diagram 2] 2 is a block diagram illustrating an example of an internal configuration of a control unit. FIG. [Diagram 3] FIG. 2 is a vertical cross-sectional view illustrating an example of the configuration of a processing unit according to the first embodiment. [Figure 4] 13 is a flowchart showing an example of an operation of a processing unit. [Diagram 5]11A and 11B are diagrams each showing an example of a processing unit in a drying liquid supplying step; [Figure 6] FIG. 13 is a diagram illustrating an example of a processing unit in a drying process. [Figure 7] 6 is a diagram for explaining the order in which drying liquid on a first main surface of a substrate evaporates. FIG. [Figure 8] 13 is a graph showing the pattern collapse rate as an experimental result. [Figure 9] FIG. 4 is a diagram illustrating another example of a part of the processing unit according to the first embodiment. [Figure 10] 13A and 13B are diagrams showing an example of a timing chart of a processing unit according to a second embodiment and a change in the flow rate of a drying liquid over time. [Figure 11] FIG. 13 is a diagram illustrating an example of a timing chart of a processing unit according to a third embodiment. [Figure 12] 13A to 13C are diagrams each showing a timing chart of a processing unit according to a fourth embodiment, and a schematic diagram showing an example of changes over time in the flow rate of a heat medium, the temperature of the heat medium, and the temperature of a first main surface of a substrate. [Figure 13] 13 is a flowchart showing a first example of the operation of the processing unit according to the fifth embodiment. [Figure 14] 13 is a flowchart showing a second example of the operation of the processing unit according to the fifth embodiment. [Figure 15] FIG. 13 is a diagram illustrating a first example of the configuration of a processing unit according to a sixth embodiment. [Figure 16] FIG. 23 is a diagram illustrating a second example of the configuration of the processing unit according to the sixth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Hereinafter, the embodiments will be described in detail with reference to the drawings. In the drawings, the dimensions and numbers of each part are exaggerated or simplified as necessary for the purpose of easy understanding. Parts having similar configurations and functions are given the same reference numerals, and duplicated explanations will be omitted in the following description.

[0031] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0032] In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0033] When an expression indicating a relative or absolute positional relationship (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) is used, the expression not only strictly indicates the positional relationship, but also indicates a state in which the relative positional relationship is displaced with respect to angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) is used, the expression not only strictly indicates a quantitatively equal state, but also indicates a state in which a difference exists within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) is used, the expression not only strictly indicates the shape geometrically, but also indicates a shape having, for example, unevenness or chamfering within a range in which a similar effect is obtained, unless otherwise specified. When an expression "comprises," "has," "includes," "includes," or "has" a component is used, the expression is not an exclusive expression that excludes the presence of other components. When the phrase "at least one of A, B, and C" is used, the phrase includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0034] First Embodiment <Overall configuration of substrate processing apparatus> 1 is a plan view illustrating a schematic configuration of a substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one.

[0035] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell. The substrate W has a thin flat plate shape having a first main surface Wa and a second main surface Wb. The second main surface Wb is the surface opposite to the first main surface Wa. In the following, the substrate W is assumed to be a semiconductor wafer. The substrate W has, for example, a disk shape. The diameter of the substrate W is, for example, about 300 mm, and the thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less. A pattern is formed on the main surface of the substrate W. The pattern here includes, for example, at least one of a wiring pattern, an electrode pattern, a semiconductor pattern, and an insulating pattern. The aspect ratio of the pattern is, for example, 5 or more and 500 or less. The pattern width is, for example, 3 nm or more and 50 nm or less. Such high aspect ratio patterns are prone to collapse.

[0036] 1, the substrate processing apparatus 100 includes an indexer block 110, a processing block 120, and a control unit 90. The processing block 120 is a section that mainly processes the substrate W, and the indexer block 110 is a section that mainly transports the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0037] The indexer block 110 includes a load port 111 and a first transport part 112. A substrate container (hereinafter referred to as a carrier) C that is carried in from the outside is placed on the load port 111. A plurality of substrates W are accommodated in the carrier C, for example, arranged at intervals from each other in the vertical direction. In the example of Fig. 1, a plurality of load ports 111 are arranged.

[0038] The first transport unit 112 is a transport robot and can take out an unprocessed substrate W from a carrier C placed on each load port 111. The first transport unit 112 can also be called an indexer robot. The first transport unit 112 transports the unprocessed substrate W taken out from the carrier C to the processing block 120. The processing block 120 can process the unprocessed substrate W. The first transport unit 112 can also receive a processed substrate W from the processing block 120 and transport the processed substrate W to a carrier C of the load port 111.

[0039] In the example of FIG. 1, the processing block 120 includes a plurality of processing units 1 and a second transport section 122. The second transport section 122 is a transport robot and can transport the substrate W between the first transport section 112 and the plurality of processing units 1. In the example of FIG. 1, the processing block 120 also includes a placement section 123. The placement section 123 is, for example, a shelf on which a plurality of substrates W can be placed in a vertically aligned state. The first transport section 112 places an unprocessed substrate W on the placement section 123. The second transport section 122 takes out the unprocessed substrate W from the placement section 123 and transports the substrate W to the processing unit 1. The processing unit 1 processes the substrate W. The configuration of the processing unit 1 will be described later. The second transport section 122 takes out the processed substrate W from the processing unit 1 and transports the substrate W to the placement section 123. The first transport section 112 takes out the substrate W from the platform 123 and transports the substrate W to the carrier C of the load port 111 .

[0040] 1, a plurality of (e.g., four) processing units 1 are provided so as to surround the second transport section 122 in a plan view. This second transport section 122 may also be called a center robot. At each position in a plan view, a plurality of processing units 1 may be stacked in the vertical direction. In other words, a plurality of towers TW (four in the figure) each of which is made up of a plurality of processing units 1 stacked in the vertical direction may be provided so as to surround the second transport section 122.

[0041] The control unit 90 performs overall control of the substrate processing apparatus 100. Specifically, the control unit 90 controls the first transport unit 112, the second transport unit 122, and the processing unit 1. FIG. 2 is a block diagram showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit, and has, for example, a data processing unit 91 and a storage unit 92. In the specific example of FIG. 2, the data processing unit 91 and the storage unit 92 are connected to each other via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit 92 may have a non-transient storage unit (for example, a ROM (Read Only Memory)) 921 and a temporary storage unit (for example, a RAM (Random Access Memory)) 922. The non-transient storage unit 921 may store, for example, a program that specifies the processing to be executed by the control unit 90. The data processing unit 91 executes this program, so that the control unit 90 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 90 may be executed by hardware such as a dedicated logic circuit.

[0042] <Processing unit overview> Fig. 3 is a vertical cross-sectional view illustrating an example of the configuration of the processing unit 1 according to the first embodiment. It is not necessary that all processing units 1 in the substrate processing apparatus 100 have the configuration illustrated in Fig. 3. It is sufficient that at least one processing unit 1 in the substrate processing apparatus 100 has the configuration illustrated in Fig. 3.

[0043] The processing unit 1 includes a substrate holding section 2 , a discharge section 3 , and a substrate heating section 4 .

[0044] 3, the processing unit 1 is also provided with a chamber 10. The chamber 10 has a box-like shape, and its internal space corresponds to a processing space for processing the substrate W. The chamber 10 is provided with an openable / closable loading / unloading port (not shown). The second transport part 122 loads an unprocessed substrate W into the chamber 10 through the loading / unloading port, and loads a processed substrate W out of the chamber 10 through the loading / unloading port.

[0045] In the example of Fig. 3, a fan filter unit 11 is provided on the ceiling of the chamber 10. The fan filter unit 11 takes in air from outside the chamber 10, purifies it, and sends the purified air into the chamber 10. Operation of the fan filter unit 11 creates a downflow of clean air in the chamber 10. In the example of Fig. 3, the upstream end of an exhaust pipe 13 is connected to the lower part of the side wall of the chamber 10. Gas in the chamber 10 is exhausted to the outside through the exhaust pipe 13.

[0046] The substrate holding unit 2 is provided in the chamber 10, and rotates the substrate W around a rotation axis Q1 while holding the substrate W in a horizontal position. The horizontal position here means that the thickness direction of the substrate W is aligned along the vertical direction. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned along the vertical direction. Such a substrate holding unit 2 may also be called a spin chuck.

[0047] Here, the first main surface Wa of the substrate W on which the pattern is formed faces vertically upward. That is, in the example of Fig. 3, the first main surface Wa of the substrate W held by the substrate holding part 2 corresponds to the upper surface. The pattern includes, for example, at least one of a wiring pattern, an insulating pattern, and a semiconductor pattern.

[0048] In the example of FIG. 3, the substrate holding unit 2 includes a spin base 21, chuck pins 22, and a rotation drive unit 23. The spin base 21 has a plate-like shape (for example, a disk shape) and is provided with its thickness direction aligned along the vertical direction. A plurality of chuck pins 22 are provided on the upper surface of the spin base 21. The plurality of chuck pins 22 are provided at equal intervals along the circumferential direction about the rotation axis Q1. The plurality of chuck pins 22 are provided so as to be displaceable between a holding position and a release position, which will be described next. The holding position is a position where the chuck pins 22 abut against the periphery of the substrate W. The plurality of chuck pins 22 hold the substrate W by stopping at the respective holding positions. FIG. 3 shows the chuck pins 22 stopped at the holding position. The release position is a position where each chuck pin 22 is separated from the substrate W. The plurality of chuck pins 22 stop at the respective release positions, whereby the holding of the substrate W by the plurality of chuck pins 22 is released. The substrate holding unit 2 also includes a pin driving unit (not shown) that displaces the chuck pins 22. The pin driving unit includes a driving source such as a motor and an air cylinder, and is controlled by the control unit 90.

[0049] The rotation drive unit 23 includes a shaft 231 and a motor 232. The upper end of the shaft 231 is connected to the lower surface of the spin base 21, and the shaft 231 extends from the lower surface of the spin base 21 along a rotation axis Q1. The motor 232 is controlled by the control unit 90 to rotate the shaft 231 about the rotation axis Q1. As a result, the spin base 21, the chuck pins 22, and the substrate W rotate together about the rotation axis Q1.

[0050] It should be noted that the substrate holding portion 2 does not necessarily have to have the chuck pin 22. For example, the substrate holding portion 2 may hold the substrate W by a chuck method such as a vacuum chuck, an electrostatic chuck, or a Bernoulli chuck.

[0051] The discharge unit 3 discharges the processing liquid toward the first main surface Wa of the substrate W held by the substrate holding unit 2. As shown in Fig. 3, the discharge unit 3 includes at least one nozzle 30. The nozzle 30 discharges the processing liquid toward the first main surface Wa of the substrate W held by the substrate holding unit 2. In this case, since the first main surface Wa corresponds to the upper surface of the substrate W, the nozzle 30 is provided vertically above the substrate W held by the substrate holding unit 2. The nozzle 30 is, for example, a straight nozzle that discharges the processing liquid in a continuous flow state.

[0052] In the example of FIG. 3, nozzles 30c, 30w, 30ia, and 30ib are shown as the nozzles 30. In the example of FIG. 3, nozzles 30c, 30w, and 30ia extend along the vertical direction. In the example of FIG. 3, nozzle 30c has an outlet 3c formed on the lower surface thereof, nozzle 30w has an outlet 3w formed on the lower surface thereof, and nozzle 30ia has an outlet 3ia (corresponding to a first outlet) formed on the lower surface thereof. Nozzle 30c ejects a chemical liquid from outlet 3c, nozzle 30w ejects a rinsing liquid from outlet 3w, and nozzle 30ia ejects a drying liquid from outlet 3ia. The chemical liquid, rinsing liquid, and drying liquid are all examples of processing liquids, and specific examples thereof will be described later.

[0053] The nozzles 30c, 30w, and 30ia discharge the processing liquid toward the center of the first main surface Wa of the substrate W held by the substrate holding unit 2. In the example of FIG. 3, the nozzles 30c, 30w, and 30ia are adjacent to each other in the horizontal direction and fixed to each other. In the example of FIG. 3, the nozzles 30c, 30w, and 30ia are provided inside the facing member 60. The facing member 60 has, for example, a cylindrical shape. The facing member 60 has a hollow shape, and the lower end opening of the hollow portion opens on the lower surface of the facing member 60. The nozzles 30c, 30w, and 30ia are provided in the hollow portion of the facing member 60, and the processing liquid discharged from each nozzle 30 flows out from the lower end opening of the facing member 60. In the example of FIG. 3, the facing member 60 is provided at a position vertically facing the center of the substrate W held by the substrate holding unit 2.

[0054] The nozzle 30ib has a discharge port 3ib (corresponding to a second discharge port), and discharges the drying liquid from the discharge port 3ib toward the peripheral portion of the first main surface Wa of the substrate W held by the substrate holding part 2. Therefore, the landing position on the first main surface Wa of the drying liquid discharged from the nozzle 30ib (hereinafter referred to as the peripheral landing position) is closer to the peripheral edge of the substrate W than the landing position on the first main surface Wa of the drying liquid discharged from the nozzle 30ia (hereinafter referred to as the central landing position). The peripheral landing position may be, for example, within a virtual annular region described below. The virtual center of the annular region coincides with the rotation axis Q1. The virtual outer diameter of the annular region may be, for example, 90%, 80%, or 70% of the diameter of the substrate W. The virtual inner diameter of the annular region may be, for example, 10%, 20%, 30%, or 40% of the diameter of the substrate W.

[0055] 3, the nozzle 30ib is provided radially outward from the periphery of the substrate W held by the substrate holding part 2. The nozzle 30ib ejects the drying liquid in a diagonal direction toward the rotation axis Q1 side and vertically downward. In this case, the drying liquid ejected from the nozzle 30ib and landed on the first main surface Wa of the substrate W may once flow toward the rotation axis Q1 side (i.e., radially inward). Then, the drying liquid is subjected to centrifugal force accompanying the rotation of the substrate W and flows radially outward.

[0056] Focusing on the function of ejecting drying liquid, it can be said that the ejection section 3 has an ejection outlet 3ia that ejects drying liquid toward the center of the first main surface Wa of the substrate W, and an ejection outlet 3ib that ejects drying liquid toward the peripheral portion of the first main surface Wa of the substrate W.

[0057] The nozzle 30 is connected to the downstream end of a supply pipe 31, and the upstream end of the supply pipe 31 is connected to a processing liquid supply source. In the example of Fig. 3, the supply pipes 31 include a supply pipe 31c, a supply pipe 31w, a supply pipe 31ia, and a supply pipe 31ib.

[0058] The downstream end of the supply pipe 31c is connected to the nozzle 30c, and the upstream end of the supply pipe 31c is connected to a chemical supply source. The chemical supply source has a tank (not shown) for storing the chemical, and supplies the chemical to the upstream end of the supply pipe 31c. As the chemical, for example, hydrofluoric nitric acid obtained by mixing hydrofluoric acid, nitric acid, and water, hydrofluoric acid hydrogen peroxide solution (FPM) obtained by mixing hydrofluoric acid, hydrogen peroxide, and water, tetramethylammonium hydroxide (TMAH), a mixture of sulfuric acid and hydrogen peroxide (SPM), ammonia water, a mixture of ammonia, hydrogen peroxide, and water (SC-1), and a mixture of hydrogen chloride, hydrogen peroxide, and water (SC-2) can be used. The chemical does not have to be a mixture, and may be a single liquid. For example, a single liquid such as hydrofluoric acid (HF), hydrogen peroxide, and sulfuric acid can be used as the chemical.

[0059] The downstream end of the supply pipe 31w is connected to the nozzle 30w, and the upstream end of the supply pipe 31w is connected to a rinse liquid supply source. The rinse liquid supply source has a tank (not shown) that stores the rinse liquid, and supplies the rinse liquid to the upstream end of the supply pipe 31w. As the rinse liquid, for example, pure water, carbon dioxide water, or ozone water can be used.

[0060] The downstream end of the supply pipe 31ia is connected to the nozzle 30ia, and the upstream end of the supply pipe 31ia is connected to the drying liquid supply source. The downstream end of the supply pipe 31ib is connected to the nozzle 30ib, and the upstream end of the supply pipe 31ib is connected to the drying liquid supply source. The drying liquid supply source has a tank (not shown) that stores the drying liquid, and supplies the drying liquid to the upstream ends of the supply pipes 31ia and 31ib. For example, an organic solvent such as isopropyl alcohol can be used as the drying liquid. The surface tension of the drying liquid is lower than the surface tension of other processing liquids (for example, both the surface tension of the chemical liquid and the surface tension of the rinse liquid). In addition, the volatility of the drying liquid is higher than the volatility of other processing liquids (for example, both the volatility of the chemical liquid and the volatility of the rinse liquid).

[0061] A supply valve 32 and a flow rate control valve 33 are inserted in the supply pipe 31. In the example of FIG. 3, a supply valve 32c and a flow rate control valve 33c are inserted in the supply pipe 31c, a supply valve 32w and a flow rate control valve 33w are inserted in the supply pipe 31w, a supply valve 32ia and a flow rate control valve 33ia are inserted in the supply pipe 31ia, and a supply valve 32ib and a flow rate control valve 33ib are inserted in the supply pipe 31ib. The supply valve 32 switches between opening and closing the supply pipe 31. The flow rate control valve 33 adjusts the flow rate of the processing liquid flowing through the supply pipe 31. The flow rate control valve 33 may be a mass flow controller. The supply valve 32 and the flow rate control valve 33 are controlled by a control unit 90.

[0062] The discharge part 3 discharges various types of processing liquids in the order described below toward the first main surface Wa of the substrate W. This allows the processing unit 1 to sequentially perform various types of processing according to the types of processing liquids on the first main surface Wa of the substrate W. Specific processing will be described later.

[0063] 3, the facing member 60 is configured to be able to discharge gas toward a first main surface Wa of the substrate W held by the substrate holding part 2. In the example of Fig. 3, the space in the hollow part of the facing member 60 other than the nozzle 30 functions as a gas flow path 30g. A lower end opening on the lower surface of the facing member 60 corresponds to the discharge port of the gas flow path 30g.

[0064] In the example of FIG. 3, the upper part of the facing member 60 is connected to the downstream end of the supply pipe 31g. In other words, the downstream end of the supply pipe 31g is connected to the gas flow path 30g. The upstream end of the supply pipe 31g is connected to a gas supply source. The gas supply source has a storage section (not shown) for storing an inert gas, and supplies the inert gas to the upstream end of the supply pipe 31g. The inert gas includes at least one of nitrogen gas and a rare gas, for example. The rare gas includes argon gas, for example.

[0065] Supply pipe 31g is provided with supply valve 32g, flow rate adjustment valve 33g, and heater 34g. Supply valve 32g switches supply pipe 31g between open and closed states. Flow rate adjustment valve 33g adjusts the flow rate of the inert gas flowing through supply pipe 31g. Heater 34g heats the inert gas flowing through supply pipe 31g. Heater 34g may be, for example, an electric resistance heater having a heating wire. Supply valve 32g, flow rate adjustment valve 33g, and heater 34g are controlled by controller 90.

[0066] When the supply valve 32g is opened and the heater 34g is operated, a high-temperature inert gas is discharged from the center of the lower surface of the facing member 60 (i.e., the lower end port of the gas flow passage 30g) toward the center of the first main surface Wa of the substrate W. This can promote drying of the substrate W.

[0067] In the example of FIG. 3, the processing unit 1 is provided with a movement drive unit 35. The movement drive unit 35 moves the discharge head including the nozzle 30c, the nozzle 30w, the nozzle 30ia, and the opposing member 60 together. Specifically, the movement drive unit 35 moves the discharge head between a processing position and a waiting position, which will be described next. The processing position is a position where the nozzle 30c, the nozzle 30w, and the nozzle 30ia discharge the processing liquid toward the first main surface Wa of the substrate W, for example, a position facing the center of the first main surface Wa of the substrate W in the vertical direction. The processing position is also a position where the opposing member 60 discharges the inert gas toward the first main surface Wa of the substrate W. In the example of FIG. 3, the discharge head stopped at the processing position is shown. The waiting position is a position where the nozzle 30c, the nozzle 30w, and the nozzle 30ia do not discharge the processing liquid toward the first main surface Wa of the substrate W, for example, a position radially outward from the substrate holding unit 2. The standby position is also a position where the opposing member 60 does not discharge the inert gas toward the first main surface Wa of the substrate W.

[0068] FIG. 3 shows an example of a specific configuration of the moving drive unit 35. In the example of FIG. 3, the moving drive unit 35 includes an arm 351, a support column 352, and a driving source 353. The support column 352 is provided radially outward from the guard 7 described later, and extends along the vertical direction. The arm 351 extends along the horizontal direction, its tip end is connected to the discharge head, and its base end is connected to the support column 352. The driving source 353 is controlled by the control unit 90, and rotates the support column 352 in forward and reverse directions within a predetermined angle range around the central axis Q2. The driving source 353 includes, for example, a motor. When the support column 352 rotates in forward and reverse directions within a predetermined angle range around the central axis Q2, the discharge head reciprocates along the circumferential direction about the central axis Q2. The support column 352 is installed so that a processing position and a standby position are located on the movement trajectory of the discharge head. The movement drive unit 35 is not necessarily limited to the embodiment shown in FIG. 3, and may include a linear motion mechanism such as a linear motor.

[0069] The substrate heating unit 4 heats the second main surface Wb of the substrate W held by the substrate holding unit 2. In the example of Fig. 3, the substrate heating unit 4 is provided at a position vertically facing the second main surface Wb of the substrate W. In the example of Fig. 3, the second main surface Wb of the substrate W corresponds to the bottom surface, so the substrate heating unit 4 is provided directly below the substrate W.

[0070] In the example of FIG. 3, the substrate heating unit 4 includes a nozzle 40. The nozzle 40 ejects a heat medium toward the second main surface Wb of the substrate W. In the example of FIG. 3, the second main surface Wb of the substrate W corresponds to the bottom surface, so the nozzle 40 may also be called a bottom nozzle. In the example of FIG. 3, a through hole is formed in the center of the spin base 21 of the substrate holding unit 2, and the shaft 231 is a hollow shaft. The through hole of the spin base 21 and the hollow part of the shaft 231 are connected in the vertical direction. A part of the nozzle 40 is disposed in the through hole. An ejection port is formed in the upper surface of the nozzle 40, and the ejection port of the nozzle 40 faces the center of the second main surface Wb of the substrate W in the vertical direction. The nozzle 40 ejects a heat medium toward the center of the second main surface Wb of the substrate W.

[0071] The downstream end of a supply pipe 41 is connected to the nozzle 40. The supply pipe 41 extends inside the shaft 231 and penetrates the shaft 231. The upstream end of the supply pipe 41 is connected to a heat medium supply source. The heat medium is a fluid (gas or liquid), and a more specific example is a liquid such as water. The heat medium supply source has, for example, a tank (not shown) that stores the heat medium, and supplies the heat medium to the upstream end of the supply pipe 41.

[0072] In the example of FIG. 3, supply pipe 41 is provided with supply valve 42, flow rate adjustment valve 43, and heater 44. Supply valve 42 switches supply pipe 41 between open and closed states. Flow rate adjustment valve 43 adjusts the flow rate of the heat medium flowing through supply pipe 41. Flow rate adjustment valve 43 may be a mass flow controller. Heater 44 heats the heat medium flowing through supply pipe 41. Heater 44 may be, for example, an electric resistance heater having an electric heating wire. Supply valve 42, flow rate adjustment valve 43, and heater 44 are controlled by control unit 90.

[0073] When the supply valve 42 opens and the heater 44 operates, a high-temperature heat medium is discharged from the nozzle 40 onto the central portion of the second main surface Wb of the substrate W. The heat medium that has landed on the central portion of the second main surface Wb of the substrate W receives centrifugal force accompanying the rotation of the substrate W, flows radially outward along the second main surface Wb, and is scattered outward from the periphery of the substrate W. As the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat is transferred from the heat medium to the substrate W, and the substrate W is heated.

[0074] In the example of FIG. 3, the processing unit 1 is provided with a guard 7 and a guard lifting drive 71. The guard 7 has a cylindrical shape with the rotation axis Q1 as the central axis, and surrounds the substrate holder 2. The guard 7 can receive the processing liquid and heat medium splashed from the periphery of the substrate W. The guard lifting drive 71 raises and lowers the guard 7 between an upper position and a lower position, which will be described below. The upper position is a position where the upper end of the guard 7 is vertically above the substrate W held by the substrate holder 2. When the guard 7 is located at the upper position, it can receive the processing liquid and heat medium splashed from the periphery of the substrate W. The lower position is a position lower than the upper position, for example, a position where the upper end of the guard 7 is vertically below the upper surface of the spin base 21.

[0075] In the example of FIG. 3, multiple guards 7 are provided. The multiple guards 7 are arranged concentrically. The multiple guards 7 may be used differently depending on the type of processing liquid. In the example of FIG. 3, cups 72 corresponding to each guard 7 are provided. The cups 72 have an annular (e.g., annular) recess (groove) surrounding the rotation axis Q1. Each cup 72 receives the processing liquid that has flowed down the inner circumferential surface of the corresponding guard 7. The upstream end of the discharge pipe 12 is connected to, for example, the bottom of each cup 72. The processing liquid received in each cup 72 is discharged to the outside of the processing unit 1 through the discharge pipe 12.

[0076] <An example of the operation of the substrate processing apparatus> Next, an example of the operation of the processing unit 1 will be described. Fig. 4 is a flow chart showing an example of the operation of the processing unit 1. The control unit 90 causes the processing unit 1 to execute the processes from step S1 to step S7 according to a preset processing procedure (recipe). Fig. 5 is a diagram showing an example of the state of the processing unit 1 in a drying liquid supplying step described later, and Fig. 6 is a diagram showing an example of the state of the processing unit 1 in a drying step described later.

[0077] First, the second transport part 122 transports the substrate W to the processing unit 1. Then, the substrate holding part 2 holds the substrate W received from the second transport part 122 (step S1: holding step). As a specific example, the substrate holding part 2 displaces the multiple chuck pins 22 from their respective release positions to their holding positions. As a result, the multiple chuck pins 22 hold the substrate W. The substrate holding part 2 continues to hold the substrate W until the processing of the substrate W is completed.

[0078] Next, the substrate holding part 2 starts rotating the substrate W (step S2: rotation start step). The substrate holding part 2 may continue rotating the substrate W until the processing of the substrate W is completed.

[0079] Next, the processing unit 1 supplies the chemical liquid to the first main surface Wa of the substrate W (Step S3: Chemical liquid process). First, the movement drive unit 35 moves the discharge head to the processing position. Also, the guard lift drive unit 71 raises the guard 7 for the chemical liquid to the upper position. Then, the control unit 90 opens the supply valve 32c. That is, the control unit 90 switches the supply valve 32c from a closed state to an open state. As a result, the chemical liquid is discharged from the nozzle 30c toward the first main surface Wa of the substrate W during rotation. The chemical liquid that has landed on the first main surface Wa of the substrate W flows radially outward due to the centrifugal force accompanying the rotation of the substrate W, and is scattered from the periphery of the substrate W. At this time, the chemical liquid acts on the first main surface Wa of the substrate W, and a chemical liquid process according to the type of the chemical liquid is performed on the first main surface Wa of the substrate W. For example, the processing unit 1 performs a cleaning process for cleaning and removing impurities on the first main surface Wa of the substrate W, or an etching process for etching a predetermined film on the first main surface Wa of the substrate W. The chemical solution scattered from the periphery of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0080] When the substrate W has been sufficiently processed, the control unit 90 closes the supply valve 32c. As a specific example, the control unit 90 measures the elapsed time from the start of the discharge of the chemical liquid, and determines whether the elapsed time is equal to or longer than a predetermined chemical liquid time. The chemical liquid time is set in advance to a time sufficient for the chemical liquid processing to be performed sufficiently. The elapsed time is measured, for example, by a timer circuit (not shown) belonging to the control unit 90. When the elapsed time is equal to or longer than the chemical liquid time, the control unit 90 switches the supply valve 32c from an open state to a closed state.

[0081] Next, the processing unit 1 supplies a rinse liquid to the first main surface Wa of the substrate W (step S4: rinse step). When the guard 7 for the rinse liquid is different from the guard 7 for the chemical liquid, the guard lifting drive unit 71 appropriately lifts and lowers the guard 7 to place the guard 7 for the rinse liquid in the upper position. Then, the control unit 90 opens the supply valve 32w. That is, the control unit 90 switches the supply valve 32w from a closed state to an open state. As a result, the rinse liquid is discharged from the nozzle 30w toward the first main surface Wa of the substrate W during rotation. The rinse liquid that has landed on the first main surface Wa of the substrate W flows radially outward due to the centrifugal force caused by the rotation of the substrate W, and is scattered from the periphery of the substrate W. At this time, the rinse liquid pushes the chemical liquid on the first main surface Wa of the substrate W radially outward. As a result, the processing liquid on the first main surface Wa of the substrate W is replaced from the chemical liquid to the rinse liquid. The processing liquid splashed from the periphery of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12 .

[0082] When the chemical liquid has been sufficiently replaced with the rinsing liquid, the control unit 90 closes the supply valve 32w. As a specific example, the control unit 90 measures the elapsed time from the start of discharge of the rinsing liquid, and switches the supply valve 32w from the open state to the closed state when the elapsed time is equal to or longer than a predetermined rinsing time. The rinsing time is set in advance to a time that allows the chemical liquid to be sufficiently replaced with the rinsing liquid.

[0083] Next, the processing unit 1 supplies a drying liquid to the first main surface Wa of the substrate W (Step S5: drying liquid supplying step). When the guard 7 for the drying liquid is different from the guard 7 for the rinsing liquid, the guard lifting drive unit 71 lifts and lowers the guard 7 appropriately to raise the guard 7 for the drying liquid to the upper position. Then, the control unit 90 opens the supply valve 32ia and the supply valve 32ib. That is, the control unit 90 switches the supply valve 32ia and the supply valve 32ib from a closed state to an open state.

[0084] When the supply valve 32ia and the supply valve 32ib are opened, the drying liquid is discharged from the outlet 3ia of the nozzle 30ia and the outlet 3ib of the nozzle 30ib toward the first main surface Wa of the substrate W being rotated, as shown in FIG. The temperature of the drying liquid may be, for example, room temperature (for example, about 25 degrees Celsius). The temperature of the drying liquid here is, for example, the temperature of the drying liquid at each of the outlets 3ia and 3ib. Moreover, the room temperature here includes, for example, the temperature of the drying liquid when a heater for heating the drying liquid is not provided upstream of the outlets 3ia and 3ib, or when the heater is not operating. In other words, the room temperature includes the temperature of the drying liquid that is not heated.

[0085] The drying liquid from the nozzle 30ia lands on the center of the first main surface Wa of the substrate W, and the drying liquid from the nozzle 30ib lands on the peripheral portion of the first main surface Wa of the substrate W. The drying liquid that has landed on the first main surface Wa flows radially outward due to centrifugal force accompanying the rotation of the substrate W, and is scattered from the peripheral portion of the substrate W. At this time, the drying liquid pushes away the rinsing liquid on the first main surface Wa of the substrate W, so that the processing liquid on the first main surface Wa of the substrate W is replaced from the rinsing liquid to the drying liquid. The processing liquid that has scattered from the peripheral portion of the substrate W is received by the guard 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0086] The total flow rate of the drying liquid discharged from the nozzles 30ia and 30ib may be set to, for example, 100 mL (milliliters) / min or more, and as a specific example, may be set to, for example, 250 mL / min. The rotation speed of the substrate W in the drying liquid supplying step may be set to, for example, 150 rpm or more and 600 rpm or less, or may be set to, for example, 200 rpm or more and 400 rpm or less. As a more specific example, the rotation speed may be set to 300 rpm.

[0087] Moreover, the processing unit 1 heats the second main surface Wb of the substrate W when the drying liquid is supplied. That is, the substrate heating section 4 heats the second main surface Wb of the substrate W. As a more specific example, the control section 90 opens the supply valve 42 and activates the heater 44. As a result, as shown in FIG. 5, a high-temperature heat medium (e.g., hot water) is discharged from the nozzle 40 toward the center of the second main surface Wb of the substrate W during rotation. The heat medium that has landed on the center of the second main surface Wb of the substrate W flows radially outward due to the centrifugal force caused by the rotation of the substrate W, and is scattered from the periphery of the substrate W. When the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat is transferred from the heat medium to the substrate W, and the substrate W is heated. The heat of the substrate W is transferred to the drying liquid on the first main surface Wa. As a result, the drying liquid on the first main surface Wa of the substrate W is also heated and the temperature increases.

[0088] The heater 44 may heat the heat medium to, for example, 60 degrees Celsius or more, 70 degrees Celsius or more, or 80 degrees Celsius or more. The heater 44 may also adjust the temperature of the heat medium to, for example, less than the boiling point of the drying liquid. The temperature of the heat medium here refers to, for example, the temperature of the heat medium at the discharge port of the nozzle 40. The flow rate control valve 43 may adjust the flow rate of the heat medium to, for example, a value greater than the flow rate of the drying liquid. More specifically, the flow rate control valve 43 may adjust the flow rate of the heat medium to, for example, 1000 mL / min or more, or 1500 mL / min or more.

[0089] As described above, in the drying liquid supplying step, the processing unit 1 rotates the substrate W and supplies the drying liquid to the first main surface Wa of the substrate W while heating the second main surface Wb of the substrate W. Moreover, the processing unit 1 discharges the drying liquid from the discharge port 3ia and the discharge port 3ib to deposit the drying liquid at the central liquid landing position and the peripheral liquid landing position of the first main surface Wa of the substrate W.

[0090] When the rinsing liquid is sufficiently replaced with the drying liquid, the processing unit 1 dries the substrate W (step S6: drying process). Specifically, the processing unit 1 measures the elapsed time from the start of the discharge of the drying liquid, and judges whether the elapsed time is equal to or longer than a predetermined drying liquid supply time. The drying liquid supply time is set in advance to a time that allows the rinsing liquid to be sufficiently replaced with the drying liquid. The drying liquid supply time is set to, for example, at least several tens of seconds, and may be set to, for example, about 40 seconds. Then, when the elapsed time is equal to or longer than the drying liquid supply time, the processing unit 1 dries the substrate W. Specifically, the control unit 90 closes the supply valve 32ia and the supply valve 32ib. The control unit 90 may switch the supply valve 32ia and the supply valve 32ib from an open state to a closed state almost simultaneously. Here, "almost simultaneously" includes, for example, a time difference of 1 second or less. In addition, the substrate heating unit 4 stops heating the second main surface Wb of the substrate W. Specifically, the control unit 90 closes the supply valve 42. The timing for closing the supply valve 42 may be substantially the same as the timing for closing the supply valves 32ia and 32ib.

[0091] Furthermore, the control unit 90 instructs the substrate holding unit 2 to increase the rotation speed of the substrate W. For example, the substrate holding unit 2 may rotate the substrate W at a rotation speed of 800 rpm or more and 2500 rpm or less, or may rotate the substrate W at a rotation speed of 800 rpm or more and 1500 rpm or less. The substrate holding unit 2 may also gradually (for example, stepwise) increase the rotation speed of the substrate W. The timing at which the increase in the rotation speed of the substrate W starts may be substantially simultaneous with the timing at which the supply valves 32ia and 32ib are closed.

[0092] The processing unit 1 may supply the inert gas toward the center of the first main surface Wa of the substrate W. Specifically, the control unit 90 may open the supply valve 32g and operate the heater 34g. As a result, as shown in FIG. 6, the high-temperature inert gas is discharged toward the center of the first main surface Wa of the substrate W from the gas discharge port (i.e., the lower end port of the gas flow path 30g) at the center of the lower surface of the facing member 60. In FIG. 6, the flow direction of the inert gas is shown typically by an arrow immediately below the facing member 60. The inert gas that hits the center of the first main surface Wa of the substrate W flows radially outward along the first main surface Wa. The heater 34g may heat the inert gas to, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The temperature of the inert gas may be, for example, the temperature of the inert gas at the gas discharge port of the gas flow path 30g. The flow rate adjustment valve 33g may adjust the flow rate of the inert gas to, for example, 10 L (liters) / min or more and 300 L / min or less.

[0093] When the drying liquid has sufficiently evaporated, the processing unit 1 stops the discharge of the inert gas and stops the rotation of the substrate W. As a specific example, the control unit 90 measures the elapsed time from the stop of the discharge of the drying liquid, and judges whether the measured time is equal to or longer than a predetermined drying time. The drying time is set in advance to a time that allows the substrate W to be sufficiently dried. When the elapsed time is equal to or longer than the drying time, the control unit 90 switches the supply valve 32g from an open state to a closed state, and causes the substrate holder 2 to stop the rotation of the substrate W. In addition, the movement drive unit 35 moves the discharge head to a standby position, and the guard lift drive unit 71 lowers the guard 7 to the lower position.

[0094] Next, the substrate holder 2 releases the substrate W from its hold (step S7: hold releasing step). Then, the second transporter 122 carries the processed substrate W out of the processing unit 1.

[0095] As described above, the processing unit 1 can perform processing on the substrate W. Moreover, in this embodiment, in a drying liquid supplying step following a liquid processing step including a chemical step and a rinsing step, the discharger 3 discharges the drying liquid toward the central liquid landing position and the peripheral liquid landing position of the first main surface Wa of the substrate W (see FIG. 5). In the above example, the nozzle 30ia discharges the drying liquid toward the central liquid landing position, and the nozzle 30ib discharges the drying liquid toward the peripheral liquid landing position. As a result, the drying liquid lands at each of the central liquid landing position and the peripheral liquid landing position of the first main surface Wa of the substrate W.

[0096] Moreover, in the present embodiment, in the drying liquid supplying step, the substrate heating unit 4 heats the second main surface Wb of the substrate W. In the above example, the nozzle 40 ejects the high-temperature heat medium toward the center of the second main surface Wb of the substrate W. As a result, the substrate W and the drying liquid on the first main surface Wa of the substrate W are heated by the heat medium.

[0097] By carrying out such a drying liquid supplying step, in the next drying step, the drying liquid on the first main surface Wa of the substrate W can be evaporated in the following order. FIG. 7 is a diagram for explaining the order in which the drying liquid on the first main surface Wa of the substrate W evaporates. In FIG. 7, the first main surface Wa of the substrate W is shown in a chronological order. In FIG. 7, the region of the first main surface Wa of the substrate W where the drying liquid exists is hatched with oblique lines. As shown in FIG. 7, initially, the drying liquid exists over the entire surface of the first main surface Wa of the substrate W. As time passes, the drying liquid on the middle region Wa2 of the first main surface Wa of the substrate W first evaporates, and the middle region Wa2 is exposed (or dried, the same applies below). The middle region Wa2 is a region that is concentric and annular with the substrate W, and is located between the center and the peripheral edge of the substrate W. Then, the dried region spreads in the radial direction as time passes, and the peripheral region Wa3 of the first main surface Wa is exposed. The peripheral region Wa3 is an annular region that is radially outward of the middle region Wa2 and concentric with the substrate W. Finally, the central region Wa1 of the first main surface Wa is exposed.

[0098] The inventors have confirmed that the above-mentioned evaporation order occurs at least above the pattern on the first main surface Wa of the substrate W. Considering that evaporation occurs mainly from the upper surface of the drying liquid, it is considered that the drying liquid also evaporates in the above-mentioned evaporation order inside the pattern.

[0099] The reason why the drying liquid evaporates in this evaporation order is not entirely clear, but one possible reason is as follows: In other words, it is believed that in the drying liquid supplying step, the drying liquid lands not only at the central landing position but also at the peripheral landing position, so that the film thickness of the drying liquid on the first main surface Wa of the substrate W becomes thinner in the middle region Wa2. Moreover, in the drying liquid supplying step, the drying liquid on the first main surface Wa of the substrate W is heated, so that the drying liquid is in a state in which it is easy to evaporate. For this reason, it is believed that in the drying step, as the substrate W rotates at high speed, the evaporation of the drying liquid on the middle region Wa2 is completed before the other regions, so that the middle region Wa2 is exposed first.

[0100] As described above, in the present embodiment, by heating the second main surface Wb of the substrate W while applying the drying liquid to the central and peripheral landing positions in the drying liquid supplying step, the evaporation of the drying liquid can be completed in the order of the middle region Wa2, the peripheral region Wa3, and the central region Wa1 in the drying step. In other words, the middle region Wa2 dries before the central region Wa1.

[0101] For comparison, a case where the drying liquid is applied only to the central liquid application position in the drying liquid supplying process will be described. In this case, in the drying process, the central region Wa1 of the first main surface Wa is exposed first, and the dried region spreads radially outward over time. In other words, when the flow rate of the drying liquid applied to the peripheral liquid application position is zero as in the comparative example, the first main surface Wa is exposed from its central region Wa1.

[0102] Conversely, in this embodiment, the flow rate of the drying liquid landing at the central landing position (hereinafter referred to as the central flow rate Fa) and the flow rate of the drying liquid landing at the peripheral landing position (hereinafter referred to as the peripheral flow rate Fb) can be set in the drying liquid supplying step so that the middle region Wa2 is exposed before the central region Wa1 in the drying step. More specifically, the central flow rate Fa and the peripheral flow rate Fb can be set so that the first main surface Wa is exposed in the order of the middle region Wa2, the peripheral region Wa3, and the central region Wa1 in the drying step.

[0103] Next, the collapse rate of the pattern will be described. FIG. 8 is a graph showing the collapse rate of the pattern as an experimental result. FIG. 8 shows the collapse rate according to the comparative example and the collapse rate according to this embodiment. The two bar graphs on the left side of FIG. 8 show the collapse rate according to the comparative example, and the two bar graphs in the center and the two bar graphs on the right side show the collapse rate according to this embodiment. The two bar graphs in the center show the collapse rate when the peripheral flow rate Fb is larger than the central flow rate Fa, and the two bar graphs on the right side show the collapse rate when the peripheral flow rate Fb is smaller than the central flow rate Fa. On each of the left, center, and right sides, the two bar graphs show the collapse rate at the center and peripheral part of the first main surface Wa of the substrate W, respectively.

[0104] As shown in FIG. 8, in the comparative example, the pattern collapse rate in the peripheral portion is high. More specifically, in the comparative example, the pattern collapse rate in the central portion is low, but the pattern collapse rate in the central portion is high. The reason is not necessarily clear, but may be considered as follows. First, it is considered that a small amount of rinse liquid (e.g., pure water) remains in the liquid film of the drying liquid on the first main surface Wa at the end of the drying liquid supplying process. In the comparative example, in the drying process, the first main surface Wa of the substrate W begins to be exposed from the central portion, and the dried region spreads outward with the passage of time. Since the remaining rinse liquid moves in the liquid film of the drying liquid, it is considered that the rinse liquid moves to the peripheral portion of the substrate W, and the rinse liquid is collected at the peripheral portion of the substrate W. It is considered that the rinse liquid collects at the peripheral portion of the substrate W and then evaporates, which increases the pattern collapse rate at the peripheral portion of the substrate W.

[0105] The reason for this can also be considered as follows: In other words, in the drying liquid supplying step, the drying liquid may not sufficiently penetrate into the pattern on the peripheral portion of the substrate W, and the rinsing liquid may not be sufficiently discharged from inside the pattern. In this case, the amount of rinsing liquid remaining inside the pattern on the peripheral portion increases, and the rate of collapse of the pattern on the peripheral portion increases in the drying step.

[0106] In contrast, in this embodiment, the pattern collapse rate in the peripheral portion can be reduced. Specifically, as shown in FIG. 8, the pattern collapse rate in the central portion is somewhat higher, but the pattern collapse rate in the peripheral portion can be reduced. The reason for this is considered to be as follows. That is, in the drying process, the middle region Wa2 is exposed (or dried) first, so the rinsing liquid in the liquid film of the drying liquid on the central region Wa1 cannot move much to the peripheral region Wa3. For this reason, it is considered that the rinsing liquid does not gather much at the peripheral portion of the substrate W, and the pattern collapse rate in the peripheral portion is improved. This consideration is considered to have some validity, as shown in FIG. 8, the pattern collapse rate in the central portion is higher.

[0107] Alternatively, in the drying liquid supplying process, the drying liquid may also land at the peripheral liquid landing position, causing the drying liquid to penetrate into the pattern even at the peripheral portion, thereby allowing the rinsing liquid to be sufficiently discharged from inside the pattern at the peripheral portion.

[0108] In this way, according to this embodiment, it is possible to reduce the collapse rate of the pattern in the peripheral portion. Also, as can be seen from Fig. 8, this embodiment can reduce the difference between the collapse rate in the central portion and the collapse rate in the peripheral portion. In other words, it is possible to make the collapse rate of the pattern on the first main surface Wa more uniform.

[0109] Furthermore, in the drying liquid supplying step, the substrate heating unit 4 heats the second main surface Wb of the substrate W, so that the temperature of the drying liquid on the first main surface Wa of the substrate W can be increased. As a result, the temperature of the drying liquid can also be increased in the subsequent drying step. This makes it possible to promote evaporation of the drying liquid while reducing the surface tension of the drying liquid. If the drying liquid can be evaporated in a shorter time, the impulse on the pattern due to the surface tension of the drying liquid during evaporation can be reduced. This makes it possible to further reduce the collapse rate of the pattern.

[0110] Furthermore, the substrate heating section 4 discharges a heat medium from the nozzle 40 toward the center of the second main surface of the substrate W to heat the substrate W. This makes it possible to heat the substrate W with a simple configuration.

[0111] 8, when the peripheral flow rate Fb is larger than the central flow rate Fa in the drying liquid supplying step, the pattern collapse rate in the peripheral portion can be further reduced, and thus the difference between the pattern collapse rate in the central portion and the pattern collapse rate in the peripheral portion can be further reduced.

[0112] Furthermore, in the above example, in the drying step, the opposing member 60 ejects high-temperature inert gas toward the first main surface Wa of the substrate W. The high-temperature inert gas can promote evaporation of the drying liquid on the first main surface Wa of the substrate W, so that the drying liquid can be evaporated in an even shorter time.

[0113] Moreover, the facing member 60 ejects the high-temperature inert gas toward the center of the substrate W. In this case, the high-temperature inert gas hits the center of the first main surface Wa of the substrate W and then flows radially outward along the first main surface Wa. This can promote evaporation of the drying liquid, particularly on the center of the substrate W. In the above example, the drying liquid on the center evaporates last. That is, the high-temperature inert gas can be supplied intensively to the drying liquid on the region that evaporates last. This can more effectively shorten the drying time required to dry the first main surface Wa of the substrate W.

[0114] The discharge unit 3 may discharge a drying liquid at a high temperature. FIG. 9 is a diagram showing another example of a part of the processing unit 1 according to the first embodiment. In the example of FIG. 9, the discharge unit 3 further includes a heater 34ia and a heater 34ib. The heater 34ia is provided in the supply pipe 31ia and heats the drying liquid flowing through the supply pipe 31ia. The heater 34ib is provided in the supply pipe 31ib and heats the drying liquid flowing through the supply pipe 31ib. The heater 34ia and the heater 34ib are controlled by the control unit 90. Each of the heater 34ia and the heater 34ib heats the drying liquid so that the temperature of the drying liquid is higher than room temperature and lower than the boiling point of the drying liquid. For example, each of the heater 34ia and the heater 34ib may raise the temperature of the drying liquid to 60 degrees Celsius or higher, and as a specific example, may raise the temperature to about 70 degrees Celsius.

[0115] An example of the operation of the processing unit 1 in Fig. 9 is similar to that in Fig. 4, but in the drying liquid supplying step (step S5), the discharge part 3 discharges the heated drying liquid from the discharge ports 3ia and 3ib. This makes it possible to further increase the temperature of the drying liquid on the first main surface Wa of the substrate W. This makes it possible to further reduce the surface tension of the drying liquid in the next drying step (step S6) and further promote evaporation of the drying liquid.

[0116] In the above example, the nozzle 30c and the nozzle 30w are provided inside the facing member 60, but at least one of them may be provided outside the facing member 60. In this case, a movement drive unit similar to the movement drive unit 35 that moves at least one of the nozzle 30c and the nozzle 30w between the processing position and the standby position may be provided separately.

[0117] <Second embodiment> In the first embodiment, the drying liquid is applied not only to the central landing position but also to the peripheral landing position. This tends to increase the total flow rate of the drying liquid (i.e., the sum of the central flow rate Fa and the peripheral flow rate Fb). To avoid this increase, it is necessary to set each of the central flow rate Fa and the peripheral flow rate Fb to be small. If the central flow rate Fa becomes small, the liquid film of the drying liquid on the first main surface Wa becomes thin, and the coverage of the first main surface Wa of the substrate W by the drying liquid decreases. As a result, many particles may adhere to the first main surface Wa of the substrate W.

[0118] Therefore, in the second embodiment, it is intended to reduce the rate of pattern collapse in the peripheral portion of the substrate W while reducing the number of particles adhering to the first main surface Wa.

[0119] An example of the configuration of the substrate processing apparatus 100 according to the second embodiment is similar to that of the first embodiment. An example of the operation of the processing unit 1 is also as shown in Fig. 4. However, in the drying liquid supplying step, the processing unit 1 changes the central flow rate Fa and the peripheral flow rate Fb over time.

[0120] FIG. 10 is a timing chart of the processing unit 1 according to the second embodiment and a diagram showing an example of a change in the flow rate of the drying liquid over time. In FIG. 10, the central flow rate Fa is indicated by a solid line, and the peripheral flow rate Fb is indicated by a dashed line. In the example of FIG. 10, the control unit 90 switches the supply valve 32ia from a closed state to an open state at time t1. As a result, the drying liquid starts to be discharged from the nozzle 30ia toward the central liquid landing position of the first main surface Wa of the substrate W. At this time t1, the substantial drying liquid supplying process starts. Meanwhile, in the example of FIG. 10, the supply valve 32ib remains closed. Therefore, the drying liquid is not yet discharged from the nozzle 30ib.

[0121] Furthermore, for example, at time t1, the control unit 90 switches the supply valve 42 from a closed state to an open state and operates the heater 44. As a result, a high-temperature heat medium is discharged from the nozzle 40 toward the second main surface Wb of the substrate W, and the substrate W is heated.

[0122] Then, at time t2, which is later than time t1, the control unit 90 switches the supply valve 32ib from the closed state to the open state. As a result, drying liquid starts to be discharged from the nozzle 30ib toward the peripheral liquid landing position of the first main surface Wa of the substrate W. That is, drying liquid is discharged from both the nozzle 30ia and the nozzle 30ib.

[0123] 10, at time t2, the control unit 90 controls the flow rate adjustment valve 33ia to reduce the central flow rate Fa, thereby making it possible to suppress an increase in the sum of the central flow rate Fa and the peripheral flow rate Fb.

[0124] Then, at time t3 after time t2, the control unit 90 switches the supply valves 32ia, 32ib, and 42 from the open state to the closed state. That is, at time t3, the drying liquid supplying step substantially ends.

[0125] As described above, during the drying liquid supply time T from time t1 to time t3, in the predetermined previous time T1 from time t1 to time t2, the central flow rate Fa is greater than the peripheral flow rate Fb. For example, the peripheral flow rate Fb may be less than half, less than one-third, less than one-quarter, or less than one-tenth of the central flow rate Fa. In the above example, the peripheral flow rate Fb is set to zero. As a result, more drying liquid can land at the central landing position, and the entire first main surface Wa of the substrate W can be covered with higher coverage. Therefore, adhesion of particles to the first main surface Wa of the substrate W can be suppressed.

[0126] On the other hand, the central flow rate Fa at a later time T2 (the time from time t2 to time t3 in the drawing) that is later than the earlier time T1 during the drying liquid supply time T is smaller than the central flow rate Fa at the earlier time T1, and the peripheral flow rate Fb at the later time T2 is larger than the peripheral flow rate Fb at the earlier time T1. Therefore, the drying liquid can be applied to both the central and peripheral liquid application positions while suppressing an increase in the total flow rate, which is the sum of the central flow rate Fa and the peripheral flow rate Fb, that is, while suppressing an increase in the amount of drying liquid used.

[0127] The later time T2 may be set shorter than the earlier time T1. The later time T2 may be set to half or less, one-third or less, one-quarter or less, or one-tenth or less of the drying liquid supply time T. As a specific example, the later time T2 may be set to 3 seconds or less. The earlier time T1 can be set longer as the later time T2 is shorter. This allows the processing unit 1 to more effectively promote the replacement of the rinsing liquid with the drying liquid while more reliably suppressing the adhesion of particles.

[0128] 10, the end point (time t3) of the later time T2 may be the end point of the drying liquid supply time T. In other words, when the later time T2 has elapsed, the control unit 90 may close the supply valve 32ia and the supply valve 32ib to stop the supply of drying liquid.

[0129] As described above, in the second embodiment, at the previous time T1, the central flow rate Fa is larger than the peripheral flow rate Fb. Therefore, the drying liquid can cover the entire first main surface Wa of the substrate W with high coverage, and adhesion of particles to the first main surface Wa of the substrate W can be appropriately suppressed.

[0130] Moreover, at a later time T2, the drying liquid lands at the peripheral liquid landing position of the first main surface Wa of the substrate W at a larger peripheral flow rate Fb. Also in the second embodiment, in the drying liquid supplying step, the substrate heating unit 4 heats the second main surface Wb of the substrate W. Therefore, in the subsequent drying step, the middle region Wa2 of the substrate W can be dried before the central region Wa1. This makes it possible to reduce the rate of pattern collapse in the peripheral portion of the substrate W.

[0131] 10, the peripheral flow rate Fb is set to be larger than the central flow rate Fa at the later time T2, which makes it possible to further reduce the collapse rate of the pattern on the peripheral portion of the substrate W, as described in the first embodiment.

[0132] <Third embodiment> In the first and second embodiments, the substrate heating unit 4 heats the second main surface Wb of the substrate W throughout the entire drying liquid supply time in the drying liquid supplying step (step S5). However, this is not necessarily limited to this.

[0133] FIG. 11 is a diagram showing an example of a timing chart of the processing unit 1 according to the third embodiment. In the example of FIG. 11, at time t1, the control unit 90 switches the supply valve 32ia and the supply valve 32ib from the closed state to the open state. As a result, the drying liquid starts to be discharged from the nozzle 30ia and the nozzle 30ib toward the first main surface Wa of the substrate W. That is, the drying liquid supplying process substantially starts at time t1. On the other hand, in the example of FIG. 11, the control unit 90 switches the supply valve 42 from the closed state to the open state at time t13 after time t1. As a result, the high-temperature heat medium starts to be discharged from the nozzle 40 toward the second main surface Wb of the substrate W. That is, the substrate heating unit 4 starts to heat the second main surface Wb of the substrate W. Then, at time t3 after time t13, the control unit 90 switches the supply valve 32ia, the supply valve 32ib, and the supply valve 42 from the open state to the closed state. That is, the drying liquid supplying process substantially ends at time t3.

[0134] As described above, in the third embodiment, during the drying liquid supply time T from time t1 to time t3, the substrate heating unit 4 does not heat the second main surface Wb of the substrate W during a predetermined pre-time T11 from time t1 to time t13, but heats the second main surface Wb of the substrate W during a predetermined post-time T12 from time t13 to time t3. The post-time T12 is set in advance to a time at which the temperature of the first main surface Wa of the substrate W at time t3 sufficiently approaches the boiling point of the drying liquid. For example, the post-time T12 may be set to half or less of the drying liquid supply time T, or may be set to one-third or less, one-quarter or less, or one-tenth or less of the drying liquid supply time T.

[0135] As described above, in the third embodiment, the substrate heating section 4 does not heat the substrate W at the previous time T11, and heats the second main surface Wb of the substrate W at the later time T12. That is, the substrate heating section 4 heats the second main surface Wb of the substrate W only at the later time T12. This makes it possible to shorten the operation time of the substrate heating section 4, and reduce the power consumption of the substrate processing apparatus 100. Furthermore, when the substrate heating section 4 supplies a high-temperature heat medium to the second main surface Wb of the substrate W, the amount of heat medium used can be reduced. When the heat medium is liquid, liquid saving can be achieved.

[0136] In the third embodiment, when the second embodiment is applied to the timing for opening the supply valve 32ib, the later time T12 may be the same as or different from the later time T2.

[0137] <Fourth embodiment> The configuration of the substrate processing apparatus 100 according to the fourth embodiment is similar to that of the first embodiment. However, in the fourth embodiment, in the drying liquid supplying step (step S5), the substrate heating unit 4 raises the temperature of at least a part (e.g., the central portion) of the second main surface Wb of the substrate W to a temperature equal to or higher than the boiling point of the drying liquid. Specifically, the substrate heating unit 4 supplies a heat medium having a temperature equal to or higher than the boiling point of the drying liquid to the central portion of the second main surface Wb of the substrate W.

[0138] FIG. 12 is a diagram showing an example of a timing chart of the processing unit 1 according to the fourth embodiment, and a schematic diagram showing an example of a time change of the flow rate of the heat medium, the temperature of the heat medium, and the temperature of the first main surface Wa of the substrate W (hereinafter, referred to as substrate temperature). In the example of FIG. 12, in the drying liquid supplying step (step S5), the temperature of the heat medium discharged from the nozzle 40 is higher than the boiling point bp of the drying liquid. When the drying liquid is isopropyl alcohol, the boiling point bp is 82.4 degrees Celsius, and the temperature of the heat medium is set to, for example, about 85 degrees Celsius. However, the temperature of the heat medium may be set to less than the boiling point of the heat medium. For example, when the heat medium is water, it may be set to less than 90 degrees Celsius, which is 10 degrees lower than the boiling point (100 degrees Celsius). This makes it possible to comply with the SEMI standard.

[0139] In the drying liquid supplying step, the drying liquid having a lower temperature than the heat medium is discharged from the nozzles 30ia and 30ib. Therefore, the low-temperature drying liquid is continuously supplied to the first main surface Wa of the substrate W. Therefore, the low-temperature drying liquid can cool the first main surface Wa of the substrate W. The cooling capacity of the drying liquid increases as the central flow rate Fa and the peripheral flow rate Fb of the drying liquid increase. Therefore, the flow rate adjustment valves 33ia and 33ib adjust the central flow rate Fa and the peripheral flow rate Fb of the drying liquid to values ​​that make the substrate temperature lower than the boiling point bp. The drying liquid that lands at the central landing position flows over the entire surface of the first main surface Wa of the substrate W, so the central flow rate Fa is particularly important. For example, the central flow rate Fa of the drying liquid is preset to about 100 mL / min or more.

[0140] 12, the temperature of the central portion of the first main surface Wa of the substrate W is shown as the substrate temperature of the first main surface Wa of the substrate W. Since the high-temperature heat medium lands on the central portion of the second main surface Wb of the substrate W, the substrate temperature of the substrate W has a temperature distribution as described below. That is, the substrate temperature is high at the central portion of the substrate W and decreases toward the radially outer side. For this reason, in the example of FIG. 12, the highest value in the temperature distribution of the first main surface Wa of the substrate W is shown as the substrate temperature.

[0141] As shown in FIG. 12, the substrate temperature in the drying liquid supplying step is less than the boiling point bp of the drying liquid. When the drying liquid is isopropyl alcohol, the highest substrate temperature in the temperature distribution of the substrate W can be adjusted to, for example, about 80 degrees Celsius or less. This makes it possible to more reliably suppress boiling of the drying liquid in the drying liquid supplying step. If the drying liquid on the first main surface Wa of the substrate W boils when the drying liquid is supplied, this will lead to adhesion of particles to the first main surface Wa. In this embodiment, the boiling of the drying liquid is more reliably suppressed, so that adhesion of particles to the first main surface Wa of the substrate W can be more reliably suppressed.

[0142] Moreover, in the fourth embodiment, the temperature of the heat medium discharged in the drying liquid supplying step is equal to or higher than the boiling point bp. Therefore, in the drying liquid supplying step, the maximum value in the temperature distribution on the first main surface Wa of the substrate W can be brought closer to the boiling point bp. The minimum value in the temperature distribution on the first main surface Wa of the substrate W in the drying liquid supplying step (i.e., the substrate temperature at the peripheral portion of the first main surface Wa) is, for example, 60 degrees Celsius or higher. In other words, the flow rate of the drying liquid can be set so that the substrate temperature at each position on the first main surface Wa of the substrate W is 60 degrees Celsius or higher and lower than the boiling point bp of the drying liquid.

[0143] In the fourth embodiment, in the drying liquid supplying step, the temperature of the substrate W itself is increased, while the temperature of the drying liquid on the first main surface Wa of the substrate W can be brought closer to the boiling point bp. Therefore, in the drying step immediately after the supply of the drying liquid is stopped, the temperature of the drying liquid can be increased. Therefore, in the drying step, the surface tension of the drying liquid can be reduced further, while the evaporation rate of the drying liquid can be increased further. In addition, since the drying liquid can be evaporated at an earlier timing immediately after the start of the drying step, it is considered that the drying liquid on the middle region Wa2 evaporates quickly while remaining as a thin liquid film. Therefore, it is considered that the middle region Wa2 can be more reliably exposed earlier than the central region Wa1.

[0144] <Fifth embodiment> In the above example, the processing unit 1 performs the chemical step (step S3), the rinsing step (step S4), the drying liquid supply step (step S5), and the drying step (step S6) in this order, but this is not necessarily limited to this.

[0145] Fig. 13 is a flowchart showing a first example of the operation of the processing unit 1 according to the fifth embodiment. In the example of Fig. 13, the control unit 90 causes the processing unit 1 to execute processes from step S11 to step S19 according to a preset processing procedure (recipe). Steps S11 to S15 are similar to steps S1 to S5, respectively. However, in step S15 (drying liquid supplying step), the substrate heating unit 4 does not have to heat the substrate W.

[0146] Next, the processing unit 1 hydrophobicizes the first main surface Wa of the substrate W (corresponding to step S16: hydrophobization process: liquid supply process). Specifically, the processing unit 1 includes a nozzle that ejects a hydrophobization liquid, and ejects the hydrophobization liquid from the nozzle onto the first main surface Wa of the substrate W during rotation. The hydrophobization liquid includes, for example, a silicon-based hydrophobization liquid. The silicon-based hydrophobization liquid is a hydrophobization liquid that hydrophobicizes silicon (Si) itself and compounds containing silicon. The hydrophobization liquid is, for example, a silylation liquid that includes a liquid silylation agent (also called a silane coupling agent). When the first main surface Wa of the substrate W has been sufficiently hydrophobized, the processing unit 1 stops ejecting the hydrophobization liquid from the nozzle.

[0147] Next, the processing unit 1 executes steps S17 to S19, which are similar to steps S5 to S7, respectively.

[0148] As described above, in the first example described above, the drying liquid supplying step (step S17) is performed in the same manner as the drying liquid supplying step (step S5) in the first to fourth embodiments. This makes it possible to reduce the collapse rate of the pattern on the substrate W. Moreover, since the first main surface Wa of the substrate W is hydrophobized, the contact angle of the first main surface Wa can be reduced. This makes it possible to reduce the surface tension acting on the pattern, and further reduce the collapse rate of the pattern.

[0149] FIG. 14 is a flowchart showing a second example of the operation of the processing unit 1 according to the fifth embodiment. In the example of FIG. 14, the control unit 90 causes the processing unit 1 to execute the processes from step S21 to step S26 according to a preset processing procedure (recipe). Steps S21 to S26 are the same as steps S1 to S3 and steps S5 to S7, respectively. However, at the end of step S23 (chemical liquid process: equivalent to liquid supplying process), metal is exposed on the first main surface Wa of the substrate W. According to the second example, step S24 (drying liquid supplying process) is performed after step S23. Therefore, water is not supplied to the first main surface Wa of the substrate W. Therefore, it is possible to avoid a reaction between metal and water, and to avoid a defect caused by the reaction. Also, in the above-mentioned second example, the drying liquid supplying process (step S24) is performed in the same manner as the drying liquid supplying process (step S5) in the first to fourth embodiments. Therefore, it is possible to reduce the collapse rate of the pattern on the substrate W.

[0150] Sixth Embodiment 15 is a diagram illustrating a first example of the configuration of a processing unit 1 according to the sixth embodiment. The processing unit 1 according to the first example differs from the processing unit 1 according to the first embodiment in terms of a nozzle 30ib.

[0151] In the example of FIG. 15, the nozzle 30ib is provided so as to be movable integrally with the discharge head by the movement drive unit 35. Specifically, the nozzle 30ib is connected to an arm 351 of the movement drive unit 35. When the discharge head is located at the processing position, the nozzle 30ib faces in the vertical direction the first main surface Wa of the substrate W held by the substrate holding unit 2. Specifically, the nozzle 30ib faces in the vertical direction the peripheral portion of the first main surface Wa. The nozzle 30ib extends in the vertical direction, and a discharge port 3ib is formed on its lower surface. The nozzle 30ib discharges the drying liquid from the discharge port 3ib, for example, vertically downward.

[0152] The operation of the processing unit 1 according to the first example is the same as that shown in the flowchart of Fig. 4. That is, the drying liquid supplying step (step S5) is performed in the same manner as in the first to fourth embodiments. Therefore, the collapse rate of the pattern on the peripheral portion of the substrate W can be reduced.

[0153] FIG. 16 is a diagram that illustrates a second example of the configuration of the processing unit 1 according to the sixth embodiment. The processing unit 1 according to the second example differs from the processing unit 1 according to the first embodiment in the configuration of the discharge unit 3 and the opposing member 60. In the example of FIG. 16, the opposing member 60 includes a blocking plate 6 and a hollow shaft 61. The blocking plate 6 is provided at a position that faces the first main surface Wa of the substrate W held by the substrate holding unit 2 in the vertical direction. In the example of FIG. 16, since the first main surface Wa of the substrate W corresponds to the upper surface, the blocking plate 6 is provided vertically above the substrate W. The blocking plate 6 has, for example, a plate-like shape, and is provided with its thickness direction along the vertical direction. The lower surface of the blocking plate 6 is an opposing surface that faces the first main surface Wa of the substrate W. The blocking plate 6 has, for example, a circular shape in a plan view. The diameter of the blocking plate 6 (i.e., the diameter of the opposing surface) may be, for example, 80% or more of the diameter of the substrate W, or may be 90% or more, or may be equal to or greater than the diameter of the substrate W.

[0154] In the example of FIG. 16, a hollow shaft 61 is provided on the upper surface of the blocking plate 6. The hollow shaft 61 has a hollow portion, and a through hole is formed in the center of the blocking plate 6, passing through the blocking plate 6 in the vertical direction. The hollow portion is connected to the through hole of the blocking plate 6 in the vertical direction. The nozzle 30ia is provided in the hollow portion of the hollow shaft 61 and the through hole of the blocking plate 6. The diameter of the outer peripheral surface of the nozzle 30i is smaller than the diameters of the hollow shaft 61 and the inner peripheral surfaces of the blocking plate 6. The space between the outer peripheral surface of the nozzle 30i and the inner peripheral surfaces of the hollow shaft 61 and the blocking plate 6 functions as a gas flow path 30g.

[0155] 16, nozzle 30c and nozzle 30w are provided outside facing member 60. Also, in the example of Fig. 16, movement drive unit 35c and movement drive unit 35w are provided as movement drive unit 35. Movement drive unit 35c moves nozzle 30c between a processing position and a standby position, and movement drive unit 35w moves nozzle 30w between the processing position and the standby position.

[0156] In the example of FIG. 16, a moving drive unit 35i is provided as the moving drive unit 35. The moving drive unit 35i moves the nozzle 30ia and the opposing member 60 together. The moving drive unit 35i moves the nozzle 30ia and the opposing member 60 together, for example, along the vertical direction. In this case, the moving drive unit 35i can also be said to be an elevation drive unit. The moving drive unit 35i includes a drive source such as a motor, and a power transmission unit that transmits power from the drive source to the nozzle 30ia and the blocking plate 6. The power transmission unit includes, for example, a cam mechanism or a ball screw mechanism.

[0157] The operation of the processing unit 1 according to the second example is similar to that of the flowchart in Fig. 4. However, the movement driver 35i lowers the nozzle 30ia and the opposing member 60 to a processing position closer to the substrate W in the drying liquid supplying step and the drying step, and raises them to a standby position higher than the processing position in other steps.

[0158] In the second example of the sixth embodiment, the drying liquid supplying step (step S5) in the first to fourth embodiments is also performed, so that the collapse rate of the pattern on the peripheral edge of the substrate W can be reduced.

[0159] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is merely an example in all respects, and this disclosure is not limited thereto. In addition, the above-mentioned various modified examples can be combined and applied as long as they are not mutually inconsistent. It is understood that many modified examples not exemplified can be envisioned without departing from the scope of this disclosure.

[0160] In the above example, a dedicated nozzle is provided for each fluid, but one nozzle may be shared by different types of fluid.

[0161] In the above example, the substrate heating section 4 supplies a heat medium to the second main surface Wb of the substrate W, but this is not necessarily limited to this. The substrate heating section 4 may include, for example, a heater provided at a position vertically facing the second main surface Wb of the substrate W. The heater may be, for example, an electric resistance heater including an electric heating wire, or an optical heater that outputs light for heating. [Explanation of symbols]

[0162] 2 Board holding part 3 Discharge part 3ia 1st discharge port (discharge port) 3ib 2nd discharge port (discharge port) 4 Substrate heating section bp boiling point Fa central flow rate Fb Marginal flow rate S1 Holding process (step) S4, S16, S23 Liquid treatment process (step) S5, S17, S24 Drying liquid supply process (step) S6, S18, S25 Drying process (step) T Drying liquid supply time Time before T1, T11 Time after T2, T12 W substrate Wa First main surface Wa2 Middle range Wb 2nd principal surface

Claims

1. a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface; a liquid processing step of supplying a processing liquid to the first main surface of the substrate; a drying liquid supplying step of supplying a drying liquid having a surface tension lower than that of the processing liquid onto the first main surface of the substrate while rotating the substrate and heating the second main surface of the substrate after the liquid processing step; a drying step of evaporating the drying liquid on the first main surface of the substrate to dry the substrate after the drying liquid supplying step; Equipped with A substrate processing method, comprising: during at least a portion of the drying liquid supplying process, ejecting the drying liquid from a first ejection port of an ejection section so that the drying liquid lands on a central portion of the first main surface of the substrate; and ejecting the drying liquid from a second ejection port of the ejection section so that the drying liquid lands on a peripheral portion of the first main surface of the substrate.

2. 2. The substrate processing method according to claim 1, A substrate processing method, wherein in the drying step, a middle region of the first main surface of the substrate, the middle region being located between the central portion and the peripheral portion, dries before the central portion.

3. 3. The substrate processing method according to claim 1, further comprising the steps of: the drying liquid being heated is discharged from the first discharge port and the second discharge port in the drying liquid supplying step.

4. 3. The substrate processing method according to claim 1, further comprising the steps of: a drying liquid supplying step of supplying the drying liquid to the first main surface of the substrate, the drying liquid being supplied to the first main surface of the substrate at a drying liquid supplying time period during which the drying liquid is supplied to the first main surface of the substrate at a drying liquid supplying time period during which the drying liquid is supplied to the first main surface of the substrate at a drying liquid supplying time period, the drying liquid being supplied to the first main surface of the substrate at a drying liquid supplying time period,

5. 3. The substrate processing method according to claim 1, further comprising the steps of: a drying liquid supply time during which the drying liquid is supplied to the first main surface of the substrate, during a first time period during which the drying liquid is supplied to the first main surface of the substrate, the central flow rate of the drying liquid from the first outlet is greater than the peripheral flow rate of the drying liquid from the second outlet, and the peripheral flow rate at a later time period after the previous time period is greater than the peripheral flow rate at the previous time.

6. 6. The substrate processing method according to claim 5, The method of processing a substrate, wherein the median flow rate at the latter time is less than the median flow rate at the former time.

7. 6. The substrate processing method according to claim 5, The method of processing a substrate, wherein the later time is shorter than the earlier time.

8. 3. The substrate processing method according to claim 1, further comprising the steps of: a heating medium is supplied to a central portion of the second main surface of the substrate to heat the substrate in the drying liquid supplying step.

9. 3. The substrate processing method according to claim 1, further comprising the steps of: A substrate processing method, comprising: supplying a heated inert gas to a central portion of the first main surface of the substrate in the drying step.

10. 3. The substrate processing method according to claim 1, further comprising the steps of: a drying liquid supply step of supplying the drying liquid to the first main surface of the substrate at a flow rate such that the temperature of the first main surface of the substrate is less than the boiling point, while heating the second main surface of the substrate so that the temperature of at least a portion of the second main surface of the substrate is equal to or higher than the boiling point of the drying liquid.

11. 3. The substrate processing method according to claim 1, further comprising the steps of: a drying liquid supplying step of supplying the drying liquid to the second main surface of the substrate, the second main surface being heated only during a latter period of a drying liquid supplying time during which the drying liquid is supplied.

12. a substrate holder that holds a substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface and rotates the substrate; a discharge unit that discharges a processing liquid onto the first main surface of the substrate held by the substrate holding unit; a substrate heating unit that heats the second main surface of the substrate held by the substrate holding unit; Equipped with the discharge portion has a first discharge port that discharges a drying liquid toward a central portion of the first main surface of the substrate held by the substrate holding portion, and a second discharge port that discharges the drying liquid toward a peripheral portion of the first main surface of the substrate held by the substrate holding portion.

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