Electro-optic device and electronic apparatus

Abstract

To provide an electro-optic device capable of suppressing an increase in temperature of a liquid crystal panel.SOLUTION: An electro-optic device includes: transistors 1; pixel electrodes 10 provided on a light incident side of the transistors 1; lens layers 34 provided to layers between the transistors 1 and the pixel electrodes 10; and relay layers 20 which are provided to layers between the lens layers 34 and the pixel electrodes 10 and which are served as first relay layers electrically connected to the pixel electrodes 10. The relay layers 20 include WSi on the side of the pixel electrodes 10.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to an electro-optical device and an electronic device equipped with the electro-optical device. [Background technology]

[0002] 2. Description of the Related Art A known conventional electro-optical device is described in Patent Document 1, for example. Patent document 1 describes a liquid crystal device that includes a pixel electrode provided on the light incident side of a substrate body of an element substrate, a transistor provided between the pixel electrode and the substrate body, a lens provided between the pixel electrode and the transistor, and a relay electrode provided between the lens and the transistor. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-167884 Summary of the Invention [Problem to be solved by the invention]

[0004] In the liquid crystal device described in Patent Document 1, a lens provided between the pixel electrode and the transistor can guide light traveling to the relay electrode to the light-transmitting region, thereby enabling a bright image to be displayed. However, when a lens is provided between the pixel electrode and the transistor, the thickness of the lens makes it difficult to electrically connect the pixel electrode and the transistor through a contact hole, etc., and when a relay electrode is provided to electrically connect the pixel electrode and the transistor, the distance between the lens and the relay electrode is short, making it difficult to guide all of the light traveling to the relay electrode to the light-transmitting region. Therefore, there is a problem in that the light impinging on the relay electrode increases the temperature of the liquid crystal panel. [Means for solving the problem]

[0005] An electro-optical device according to one embodiment of the present application comprises a transistor, a pixel electrode provided on the light incident side of the transistor, a lens layer provided in a layer between the transistor and the pixel electrode, and a first relay layer provided in a layer between the lens layer and the pixel electrode and electrically connected to the pixel electrode, wherein the first relay layer includes WSi.

[0006] An electro-optical device according to one embodiment of the present application includes data lines extending along a first direction, scanning lines extending along a second direction intersecting the first direction, transistors electrically connected to the data lines and the scanning lines, pixel electrodes provided on the light incident side of the transistors, a lens layer provided in a layer between the transistors and the pixel electrodes, a first relay layer provided in a layer between the lens layer and the pixel electrodes and electrically connected to the pixel electrodes, and a second relay layer provided in a layer between the transistors and the lens layer and electrically connected to the first relay layer, wherein the second relay layer has a main body portion overlapping the transistor in a planar view, a first protrusion protruding from the main body portion along the first direction, and a second protrusion protruding from the main body portion along the second direction, and the main body portion, the first protrusion, and the second protrusion include WSi on the pixel electrode side.

[0007] An electronic device according to an aspect of the present application includes the electro-optical device described above. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view of an electro-optical device according to a first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view of the electro-optical device taken along line II-II in FIG. [Diagram 3] FIG. 2 is an equivalent circuit diagram showing an electrical configuration of an element substrate. [Figure 4] FIG. 2 is an explanatory diagram showing a cross-sectional structure of a display area of ​​an element substrate. [Diagram 5] FIG. 2 is a plan view showing a part of a display area of ​​an element substrate. [Figure 6]FIG. 6 is an explanatory diagram showing a cross-sectional structure taken along line VI-VI in FIG. 5 . [Figure 7] FIG. 4 is an explanatory diagram showing a cross-sectional structure according to Modification 1. [Figure 8] FIG. 11 is an explanatory diagram showing a cross-sectional structure according to Modification 2. [Figure 9] FIG. 11 is an explanatory diagram showing a cross-sectional structure according to Modification 3. [Figure 10] FIG. 13 is an explanatory diagram showing a cross-sectional structure according to Modification 4. [Figure 11] FIG. 11 is a schematic diagram showing an example of an electronic device according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the dimensions of the components may be shown on different scales in order to make the components easier to see. For ease of explanation, the following description will be made using the mutually orthogonal X-axis, Y-axis, and Z-axis as appropriate. A direction along the X-axis will be referred to as the X1 direction, and a direction opposite to the X1 direction will be referred to as the X2 direction. Similarly, a direction along the Y-axis will be referred to as the Y1 direction, and a direction opposite to the Y1 direction will be referred to as the Y2 direction. A direction along the Z-axis will be referred to as the Z1 direction, and a direction opposite to the Z1 direction will be referred to as the Z2 direction. In the following description, a view in the Z1 or Z2 direction will be referred to as a "planar view," and a view from a direction perpendicular to a cross section including the Z-axis will be referred to as a "cross-sectional view."

[0010] Furthermore, in the following description, for example, the expression "on the substrate" refers to a substrate that is disposed on the substrate, a substrate that is disposed on the substrate via another structure, or a substrate that is partially disposed on the substrate and partially disposed on the substrate via another structure. The expression "top surface of the substrate" refers to the surface of the substrate on the Z1 direction side.

[0011] 1. Embodiment 1 In this embodiment, a liquid crystal device will be described as an example of the electro-optical device. The liquid crystal device is an active-drive transmissive liquid crystal device having a thin film transistor (TFT) as a switching element for each pixel, and is used as a light modulation device in a projection display device, which will be described later, for example.

[0012] 1.1. Overview of the structure of liquid crystal devices The structure of a liquid crystal device 300 according to this embodiment will be described with reference to Figures 1 and 2. Figure 1 shows a plan view of the liquid crystal device 300. Figure 2 shows a schematic cross-sectional configuration of the liquid crystal device 300 taken along line II-II in Figure 1.

[0013] 1 and 2, a liquid crystal device 300 includes a light-transmitting element substrate 100, a light-transmitting counter substrate 200, a frame-shaped seal member 8, and a liquid crystal layer Lc. Note that "light-transmitting" refers to transparency to visible light, and preferably refers to a visible light transmittance of 50% or more.

[0014] The liquid crystal device 300 has a display area A1 for displaying an image, and a peripheral area A2 located outside the display area A1 in a plan view. A plurality of pixels P arranged in a matrix are provided in the display area A1. Note that although the shape of the liquid crystal device 300 shown in Fig. 1 is rectangular, it may be another shape, for example, circular.

[0015] As shown in FIG. 2, the element substrate 100 and the counter substrate 200 are disposed with a liquid crystal layer Lc therebetween. In this embodiment, the counter substrate 200 is disposed on the light incident side of the liquid crystal layer Lc, and the element substrate 100 is disposed on the light exit side of the liquid crystal layer Lc. Incident light IL incident on the counter substrate 200 is modulated by the liquid crystal layer Lc and is emitted from the element substrate 100 as modulated light ML.

[0016] The element substrate 100 has a base 90, a plurality of interlayer insulating layers including an interlayer insulating layer 82, a pixel electrode 10, and an alignment film 12. Although not shown, a lens layer 34, which will be described later, is provided between the pixel electrode 10 and the interlayer insulating layer 82.

[0017] The base 90 is a flat plate having optical transparency and insulating properties. The base 90 is, for example, a quartz substrate or a glass substrate. Transistors, which will be described later, are disposed between the multiple interlayer insulating layers. The pixel electrode 10 is transparent. The pixel electrode 10 is made of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide (FTO). The thickness direction of the pixel electrode 10 coincides with the Z1 direction or the Z2 direction. The alignment film 12 has light-transmitting and insulating properties. The alignment film 12 aligns the liquid crystal molecules of the liquid crystal layer Lc. Examples of materials for the alignment film 12 include silicon oxide (SiO2) and polyimide.

[0018] The counter substrate 200 includes a base 210 , an insulating layer 220 , a common electrode 230 , and an alignment film 240 . The substrate 210 is a flat plate having optical transparency and insulating properties, and is, for example, a quartz substrate or a glass substrate. The insulating layer 220 is transparent and insulating, and is made of an inorganic material such as silicon oxide.

[0019] The common electrode 230 is an electrode disposed opposite the multiple pixel electrodes 10. The common electrode 230 can be referred to as a counter electrode. The common electrode 230 includes a transparent conductive material such as ITO, IZO, or FTO. The common electrode 230 and the pixel electrodes 10 apply an electric field to the liquid crystal layer Lc. The alignment film 240 is light-transmitting and insulating.

[0020] The seal member 8 is disposed between the element substrate 100 and the opposing substrate 200. The seal member 8 is formed using an adhesive containing various hardening resins such as epoxy resin. The seal member 8 may contain a gap material made of an inorganic material such as glass.

[0021] The liquid crystal layer Lc is disposed within an area surrounded by the element substrate 100, the counter substrate 200, and the seal member 8. The liquid crystal layer Lc is an electro-optical layer whose optical characteristics change in response to an electric field generated by the pixel electrodes 10 and the common electrode 230. The liquid crystal layer Lc contains liquid crystal molecules having positive or negative dielectric anisotropy. The orientation of the liquid crystal molecules changes in response to an electric field applied to the liquid crystal layer Lc. The liquid crystal layer Lc modulates the incident light IL in response to the applied electric field.

[0022] As shown in FIG. 1, in a peripheral region A2 of an element substrate 100, a plurality of scanning line driving circuits 6, a data line driving circuit 7, and external terminals 9 are arranged. The external terminal 9 is a mounting terminal on which an external connection line such as an FPC (Flexible Printed Circuit) (not shown) is mounted. Various signals including an image signal, a synchronization signal, an inspection signal, a common potential, a power supply potential, etc. are supplied to the external terminal 9 from the outside via the external connection line.

[0023] 1.2.Electrical configuration of the element substrate FIG. 3 is an equivalent circuit diagram showing the electrical configuration of the element substrate 100. As shown in FIG. 3, a display area A1 of the element substrate 100 is provided with a plurality of transistors 1, m data lines 4, n scanning lines 3, and m capacitance lines 5. n and m are each an integer of 2 or more. The transistors 1 are disposed at each intersection of the n scanning lines 3 and the m data lines 4.

[0024] The data lines 4 extend in the Y1 direction, and the m data lines 4 are arranged at equal intervals in the X1 direction. The data lines 4 are electrically connected to the source regions of the transistors 1. The data lines 4 are electrically connected to the data line driving circuit 7 shown in FIG. The data line driving circuit 7 supplies image signals E1, E2, . . . , and Em to the data lines 4, which number is 1 to m.

[0025] The scanning lines 3 extend in the X1 direction, and n scanning lines 3 are arranged at equal intervals in the Y1 direction. The scanning lines 3 are electrically connected to the gate electrodes of the transistors 1. The scanning lines 3 are electrically connected to a scanning line driving circuit 6 shown in FIG. The scanning line driving circuit 6 supplies scanning signals G1, G2, . . . , and Gn to the 1 to n scanning lines 3 in a line-sequential manner.

[0026] The m data lines 4 and the n scanning lines 3 are electrically insulated from each other and arranged in a lattice pattern in a plan view. An area surrounded by two adjacent scanning lines 3 and two adjacent data lines 4 corresponds to a pixel P. The Y1 direction is an example of a first direction, and the X1 direction is an example of a second direction. A pixel electrode 10 is provided for each pixel P. The pixel electrode 10 is electrically connected to the drain region of the transistor 1.

[0027] The capacitance lines 5 extend in the Y1 direction, and the m capacitance lines 5 are arranged at equal intervals in the X1 direction. The capacitance lines 5 are electrically insulated from the data lines 4 and the scanning lines 3 and are arranged at intervals from these. A fixed potential such as a common potential or a ground potential is applied to the capacitance lines 5 via an external terminal 9.

[0028] One electrode of the capacitance element 2 is electrically connected to the capacitance line 5. The other electrode of the capacitance element 2 is electrically connected to the pixel electrode 10 and holds the potential of the image signal supplied to the pixel electrode 10.

[0029] 1.3. Overview of the cross-sectional structure of the display area of ​​the element substrate FIG. 4 is an explanatory diagram showing the cross-sectional structure of the display region A1 of the element substrate 100, and shows the stacking and connection relationships of the layers constituting the pixels P provided in the display region A1. As shown in FIG. 4, in the display region A1, the element substrate 100 has a structure in which insulating or conductive functional layers or films are stacked on a base 90.

[0030] The light-shielding layer 80 is disposed between the base 90 and the interlayer insulating layer 82 . The light-shielding layer 80 is made of a conductive material having light-shielding properties. By using a conductive material having light-shielding properties for a conductive functional layer or functional film, the conductive functional layer or functional film can be made to function as a light-shielding layer. Examples of conductive materials having light-shielding properties include metals such as tungsten (W), titanium (Ti), chromium (Cr), iron (Fe), and aluminum (Al), metal nitrides, and metal silicides. The same applies below. Note that "light-shielding properties" refers to light-shielding properties against visible light, and preferably refers to a visible light transmittance of less than 50%, and more preferably refers to a visible light transmittance of 10% or less. The light blocking layer 80 constitutes a part of the scanning line 3 .

[0031] The interlayer insulating layer 82 is transparent and insulating. The interlayer insulating layer 82 is made of an inorganic material such as silicon oxide (SiO2). Each of the following interlayer insulating layers is made of the same material as the interlayer insulating layer 82. The transistor 1 is provided on the interlayer insulating layer 82 .

[0032] The transistor 1 includes a semiconductor layer 70 having an LDD (Lightly Doped Drain) structure, a gate electrode 74, and a gate insulating layer 72. The semiconductor layer 70 has a drain region 70d, an LDD (Lightly Doped Drain) region 70a, a channel region 70c, an LDD region 70b, and a source region 70s.

[0033] The semiconductor layer 70 is, for example, polysilicon, and regions other than the channel region 70c are doped with impurities to enhance conductivity. The impurity concentrations in the LDD region 70b and the LDD region 70a are lower than the impurity concentrations in the source region 70s and the drain region 70d. A gate electrode 74 is provided on the semiconductor layer 70 via a gate insulating layer 72. The gate electrode 74 overlaps with a channel region 70c of the semiconductor layer 70.

[0034] The gate electrode 74 is formed using, for example, polysilicon doped with impurities that enhance electrical conductivity. The gate electrode 74 may also be formed using a material having electrical conductivity, such as a metal, a metal silicide, or a metal compound.

[0035] The gate insulating layer 72 is made of silicon oxide formed by, for example, thermal oxidation or a CVD (Chemical Vapor Deposition) method. The gate electrode 74 and the light-shielding layer 80 are electrically connected via a contact hole 81. The contact hole 81 penetrates the gate insulating layer 72 and the interlayer insulating layer .

[0036] An interlayer insulating layer 76 is provided on the transistor 1 . On the interlayer insulating layer 76, a conductive layer 60 and a relay layer 62 are provided. The conductive layer 60 and the relay layer 62 are provided in the same layer and are made of a light-shielding conductive material. The conductive layer 60 and the relay layer 62 preferably have a three-layer structure of titanium nitride, aluminum, and titanium nitride.

[0037] The conductive layer 60 constitutes a part of the data line 4. The conductive layer 60 is electrically connected to a source region 70s of the semiconductor layer 70 via a contact hole 73 that penetrates the interlayer insulating layer 76. The relay layer 62 is electrically connected to a drain region 70d of the semiconductor layer 70 via a contact hole 71 that penetrates the interlayer insulating layer 76.

[0038] An interlayer insulating layer 64 is provided on the interlayer insulating layer 76 , the conductive layer 60 , and the relay layer 62 . The relay layer 52 is provided on the interlayer insulating layer 64. The relay layer 52 is made of a light-shielding conductive material. The relay layer 52 is electrically connected to the relay layer 62 via a contact hole 61 that penetrates the interlayer insulating layer 64 .

[0039] An interlayer insulating layer 54 is provided on the interlayer insulating layer 64 and the relay layer 52 . On the interlayer insulating layer 54, the capacitive element 2 is provided. The capacitive element 2 includes a capacitive electrode 50 made of a conductive layer, and a capacitive electrode 40 which is an example of a relay layer. The capacitive electrode 50 is provided on the base 90 side, and the capacitive electrode 40 is provided on the pixel electrode 10 side. In addition, a capacitive insulating film 56 is provided between the capacitive electrode 40 and the capacitive electrode 50. Both the capacitive electrode 40 and the capacitive electrode 50 are formed of a light-shielding conductive material. The capacitive insulating film 56 is formed of a desired dielectric material.

[0040] The capacitance electrode 50 constitutes a part of the capacitance line 5 . The capacitance electrode 40 is electrically connected to the relay layer 52 via a contact hole 51 penetrating the interlayer insulating layer 54. As a result, the capacitance electrode 40 is electrically connected to the drain region 70d of the transistor 1, and functions as a relay electrode that electrically connects the transistor 1 and the pixel electrode 10. In addition, an image signal to be supplied to the pixel electrode 10 is supplied to the capacitance electrode 40, and a fixed potential is supplied to the capacitance electrode 50 from the capacitance line 5, so that the capacitance element 2 functions as a storage capacitance.

[0041] Between the capacitance electrode 40 and the pixel electrode 10, an optical function layer LS including a lens layer 34 is provided. The optical functional layer LS is provided to suppress light loss. Specifically, the optical path of the light passing through the pixel electrodes 10 is adjusted so that the light is not lost due to hitting the functional layers made of conductive materials having light-shielding properties, such as the data lines 4 and the capacitance lines 5. The optical functional layer LS includes a light-transmitting layer 42 , a lens forming layer 35 , a light-transmitting layer 22 , and a protective layer 24 .

[0042] The light-transmitting layer 42 is an optical path length adjustment layer, which is called a path layer for adjusting the optical path length. The light-transmitting layer 42 is made of an inorganic material such as silicon oxide. The upper surface of the light-transmitting layer 42 is planarized by CMP or the like.

[0043] The lens forming layer 35 includes a lens layer 34 and a light transmitting layer 36 . The lens layer 34 is formed of an inorganic material, such as silicon oxynitride (SiON), having a refractive index different from that of the light-transmitting layer 36. The lens layer 34 has, on its upper surface, a convex lens surface 34s that protrudes toward the pixel electrode 10. The lens surface 34s is formed by etching the upper surface of the lens layer 34.

[0044] The light-transmitting layer 36 is formed on the lens layer 34. The light-transmitting layer 36 is formed of an inorganic material such as silicon oxide, similar to the light-transmitting layer 42. The light-transmitting layer 36 is formed by forming a film of silicon oxide on the lens surface 34s and then planarizing the film by CMP or the like.

[0045] The light-transmitting layer 22 is provided on the light-transmitting layer 36 . The light-transmitting layer 22 is an optical path length adjustment layer, and is made of an inorganic material such as silicon oxide, similar to the light-transmitting layer .

[0046] The protective layer 24 is provided on the light-transmitting layer 22. The protective layer 24 is made of an inorganic material having light-transmitting and hygroscopic properties, such as BSG (Borosilicate Glass). The pixel electrode 10 is provided on the protective layer 24. On the pixel electrode 10, an alignment film 12 is provided.

[0047] The pixel electrode 10 and the capacitance electrode 40 are electrically connected via the contact plug 21, the relay layer 20, the contact plug 31, the relay layer 30, and the contact plug 41. As a result, the pixel electrode 10 is electrically connected to the drain region 70d of the transistor 1 via the capacitance electrode 40. In this embodiment, the relay layer 20 is an example of a first relay layer, the capacitance electrode 40 is an example of a second relay layer, and the relay layer 30 is an example of a third relay layer.

[0048] Between the pixel electrode 10 and the relay layer 20, a contact hole 23 penetrating the protective layer 24 and the light-transmitting layer 22 is provided. The contact hole 23 is provided to electrically connect the pixel electrode 10 and the relay layer 20. A contact plug 21 serving as a conductive member called a pixel contact plug is provided in the contact hole 23. The contact plug 21 is made of a light-shielding conductive material such as tungsten.

[0049] The relay layer 20 is provided between the light-transmitting layer 22 and the light-transmitting layer 36. The relay layer 20 is formed of a material including tungsten silicide (WSi) and / or titanium nitride (TiN).

[0050] The contact plug 31 is provided in a contact hole 33 penetrating a lens formation layer 35. The contact hole 33 has the highest aspect ratio among the other contact holes because the lens formation layer 35 is thicker than the other interlayer insulating layers.

[0051] The contact plug 31 electrically connects the relay layer 20 and the relay layer 30. The contact plug 31 is made of a light-shielding conductive material. In this embodiment, the contact plug 31 is made of tungsten or a conductive material containing tungsten.

[0052] Tungsten is more suitable for forming contact plugs with a high aspect ratio and fine structure than other conductive materials. Therefore, by using tungsten or a conductive material containing tungsten as the material for the contact plugs 31, the difficulty of forming the contact plugs 31 can be reduced.

[0053] The relay layer 30 is provided between the light-transmitting layer 42 and the lens layer 34 . The relay layer 30 is formed from a material containing titanium nitride.

[0054] A contact hole 43 penetrating the light-transmitting layer 42 is provided between the relay layer 30 and the capacitance electrode 40 . The contact hole 43 is provided to electrically connect the relay layer 30 and the capacitance electrode 40, and a contact plug 41 serving as a conductive member is provided in the contact hole 43. The contact plug 41 is made of a light-shielding conductive material such as tungsten.

[0055] 1.4. Planar structure of the display area of ​​the element substrate FIG. 5 is a plan view showing a part of the display region A1 of the element substrate 100, and shows the planar structure of the display region A1 of the element substrate 100 when viewed in the Z2 direction from the liquid crystal layer Lc side.

[0056] 5, the outer edge of the pixel electrode 10 is indicated by a solid line, and the outer edge of the configuration included in the optical function layer LS among the configurations provided on the base 90 side of the pixel electrode 10 is indicated by a dashed line. In addition, the curved shape of the lens surface 34s is indicated by a double circle indicated by a two-dot chain line, and the boundary where two adjacent lens surfaces 34s meet is indicated by a boundary line 34b.

[0057] 5, the pixel electrodes 10 have a predetermined size and a square shape, and are arranged in a matrix at a predetermined pitch along the X-axis and Y-axis. In this embodiment, the predetermined size of the pixel electrode 10 is approximately 6 μm in length and width, and the predetermined pitch is approximately 7 μm. Note that the predetermined size and predetermined pitch of the pixel electrode 10 described above are merely examples and may be changed as appropriate.

[0058] The lens surface 34s is provided for each pixel electrode 10. The lens surfaces 34s have a predetermined size, and are provided at a predetermined pitch that is the same as or similar to the pixel electrodes 10.

[0059] The space between adjacent pixel electrodes 10 is a light-shielding area, and the center side of the pixel electrode 10 is a light-transmitting area through which light passes. The light-transmitting area can be called an opening area. In the light-shielding area, a contact plug 21, a contact plug 31, a relay layer 30, and a capacitance electrode 40 are provided. In addition, a transistor 1, a gate electrode 74, a scanning line 3, a data line 4, a capacitance line 5, and the like (not shown) are provided in the light-shielding area. The contact plug 31, the relay layer 30, the capacitance electrode 40, the scanning line 3, the data line 4, and the capacitance line 5 provided in the light-shielding area are all provided so as to overlap the transistor 1 in a plan view, and function as a light-shielding layer for the transistor 1.

[0060] The contact plug 21 is provided at a position overlapping the pixel electrode 10 and the relay layer 20, and in this embodiment, at a position overlapping the lower left corner of the pixel electrode 10 and the upper right corner of the relay layer 20. The contact hole 23 is provided at a position that does not overlap with the contact hole 33 in a plan view. When the contact hole 23 is provided at a position that does not overlap with the contact hole 33 in this way, the film formability of the pixel electrode 10 on the contact hole 23 can be improved compared to when the contact hole 23 is provided at a position that overlaps with the contact hole 33.

[0061] The contact hole 33 and the contact plug 31 are provided in a gap surrounded by the corners of four adjacent pixel electrodes 10 in a plan view. The plurality of contact plugs 31 are arranged at a predetermined pitch. In this embodiment, the predetermined pitch is about 7 μm. Note that the above-mentioned predetermined pitch of the contact plugs 31 is an example and may be changed as appropriate.

[0062] The relay layer 30 is provided at a position overlapping, in a plan view, the relay layers 20 and 40, the contact holes 33 and 43, and the contact plugs 31 and 41. The relay layer 30 has a predetermined size and a square shape. In this embodiment, the size of the relay layer 30 is approximately 2 μm in length and width. The sizes of the relay layer 20 and the capacitive electrode 40 are both larger than the relay layer 30. Therefore, the relay layer 30 is located inside the outer edges of the relay layer 20 and the capacitive electrode 40 in a planar view. In other words, the relay layer 30 is covered by the relay layer 20 in a planar view seen from the pixel electrode 10 side, and the relay layer 30 is covered by the capacitive electrode 40 in a planar view seen from the base 90 side.

[0063] The contact plug 41 is provided at a position overlapping the contact hole 33 and the contact plug 31 .

[0064] The capacitance electrode 40 is provided at a position overlapping the relay layers 20 and 30, the contact holes 23, 33 and 43, and the contact plugs 21, 31 and 41 in a plan view. The capacitance electrode 40 has a wide portion 40c, a protruding portion 40a protruding from the wide portion 40c along the Y1 direction, and a protruding portion 40b protruding from the wide portion 40c along the X1 direction. The wide portion 40c has a size and shape that overlaps with the entire relay layer 30 in a plan view. The wide portion 40c also overlaps with a transistor 1 (not shown) in a plan view. In this embodiment, the wide portion 40c is an example of a main body portion, the protruding portion 40a is an example of a first protruding portion, and the protruding portion 40b is an example of a second protruding portion.

[0065] In this embodiment, the shapes of contact hole 23, contact hole 33, and contact hole 43, and contact plug 21, contact plug 31, and contact plug 41 are each rectangular in a planar view, but are not limited to this and may be, for example, circular.

[0066] 1.5. Cross-sectional structure of the optical function layer in the display area of ​​the element substrate FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 5, and shows the cross-sectional structure of the optical function layer LS.

[0067] In this embodiment, the relay layer 20 is composed of a single conductive layer made of a WSi layer 20w containing WSi. The thickness of the WSi layer 20w is about 2000 Å. The relay layer 30 is composed of a single conductive layer made of a TiN layer containing titanium nitride.

[0068] The capacitance electrode 40 is composed of two conductive layers, a WSi layer 40w containing tungsten silicide and a TiN layer 40t containing titanium nitride. The WSi layer 40w is provided on the light incident side. The thickness of the WSi layer 40w is preferably 500 Å or more in order to exhibit light reflection performance. The total thickness of the capacitance electrode 40, including the WSi layer 40w and the TiN layer 40t, is about 2000 Å, so the thickness of the TiN layer 40t may be 500 Å to 1500 Å depending on the thickness of the WSi layer 40w.

[0069] Here, the optical absorptance of TiN is about 75% for blue light (450 nm) and about 71% for green light (550 nm), while the optical absorptance of WSi is about 45% for both blue and green light.

[0070] Therefore, by having the WSi layer 40w on the light incident side, even if some of the modulated light ML that was not completely focused by the lens surface 34s hits the capacitive electrode 40, the amount of light absorbed can be reduced by about 30% compared to when the TiN layer 40t is present on the light incident side of the capacitive electrode 40, and therefore the temperature rise due to light absorption can be suppressed.

[0071] 1.6. Variations There may be various modifications to the embodiment of the cross-sectional structure of the optical function layer LS in the display area A1 of the element substrate 100. Specific modifications will be exemplified below.

[0072] 1.6.1. Variation 1 FIG. 7 is an explanatory diagram showing the cross-sectional structure of the optical function layer LS according to Modification 1, and shows a modification of the cross-sectional structure of the optical function layer LS shown in FIG.

[0073] In the first modification, the relay layer 20 is composed of two conductive layers, that is, a WSi layer 20w containing tungsten silicide and a TiN layer 20t containing titanium nitride.

[0074] The WSi layer 20w is provided on the light incident side. The thickness of the WSi layer 20w is preferably 500 Å or more in order to exhibit light reflecting performance. Since the total thickness of the relay layer 20 is about 2000 Å, the thickness of the TiN layer 20t may be set to 500 Å to 1500 Å depending on the thickness of the WSi layer 20w.

[0075] By providing the WSi layer 20w on the light incident side of the TiN layer 20t, even if part of the modulated light ML that has passed through the liquid crystal layer Lc hits the relay layer 20, the amount of light absorbed can be reduced by about 30% compared to when the TiN layer 20t is on the light incident side of the relay layer 20, thereby suppressing the temperature rise due to light absorption. Furthermore, by providing the TiN layer 20t on the contact plug 31 side, the contact resistance and adhesion with the contact plug 31 made of tungsten can be increased.

[0076] 1.6.2. Variation 2 FIG. 8 is an explanatory diagram showing the cross-sectional structure of the optical function layer LS according to Modification 2, which shows a modification of the cross-sectional structure of the optical function layer LS shown in FIG. In the second modification, the relay layer 20 is configured as a single conductive layer made of a TiN layer 20t. Therefore, when the contact plug 21 is made of tungsten, the contact resistance and adhesion with the contact plug 21 can be increased.

[0077] Variation 3 FIG. 9 is an explanatory diagram showing the cross-sectional structure of the optical function layer LS according to Modification 3, and shows a modification of the cross-sectional structure of the optical function layer LS shown in FIG. In the third modification, the relay layer 20 is composed of a single conductive layer made of a WSi layer 20w, and the capacitance electrode 40 is composed of a single conductive layer made of a TiN layer 40t. The thicknesses of the WSi layer 20w and the TiN layer 40t are each about 2000 Å.

[0078] Variation 4 FIG. 10 is an explanatory diagram showing the cross-sectional structure of the optical function layer LS according to Modification 4, which shows a modification of the cross-sectional structure of the optical function layer LS shown in FIG. In the fourth modification, the relay layer 20 is composed of two conductive layers, a WSi layer 20w and a TiN layer 20t, and the capacitance electrode 40 is composed of a single conductive layer, a TiN layer 40t.

[0079] As described above, the liquid crystal device 300 serving as an electro-optical device according to this embodiment has the following advantages. The liquid crystal device 300 of this embodiment comprises a transistor 1, a pixel electrode 10 provided on the light incident side of the transistor 1, a lens layer 34 provided in a layer between the transistor 1 and the pixel electrode 10, and a relay layer 20 as a first relay layer provided in a layer between the lens layer 34 and the pixel electrode 10 and electrically connected to the pixel electrode 10, where the relay layer 20 contains WSi.

[0080] In this way, since the relay layer 20 has the WSi layer 20w containing WSi on the pixel electrode 10 side, even if the relay layer 20 is exposed to light, the WSi layer can suppress absorption of the light. This makes it possible to prevent the temperature of the liquid crystal device 300, which includes the liquid crystal layer Lc, from increasing, thereby preventing the occurrence of spots and deterioration in light resistance, and extending the product life of the liquid crystal device 300.

[0081] The liquid crystal device 300 of this embodiment further includes a data line 4 extending along the Y1 direction as a first direction, a scanning line 3 extending along the X1 direction as a second direction intersecting the Y1 direction, and a capacitance electrode 40 as a second relay layer provided in a layer between the transistor 1 and the lens layer 34 and electrically connected to the relay layer 20, the capacitance electrode 40 having a wide portion 40c as a main body portion overlapping with the transistor 1 in a planar view, a protrusion 40a as a first protrusion protruding from the wide portion 40c in the Y1 direction, and a protrusion 40b as a second protrusion protruding from the wide portion 40c in the X1 direction, and the wide portion 40c, the protrusion 40a, and the protrusion 40b include WSi on the pixel electrode 10 side.

[0082] In this manner, the capacitance electrode 40 has the wide portion 40c, the protruding portion 40a, and the protruding portion 40b, and the wide portion 40c, the protruding portion 40a, and the protruding portion 40b have a WSi layer 40w including WSi on the pixel electrode 10 side. Therefore, even if a portion of the modulated light ML that is not completely converged by the lens layer 34 hits the capacitive electrode 40, the WSi layer 40w can suppress the absorption of light, and therefore, the temperature rise due to light absorption can be suppressed.

[0083] In the liquid crystal device 300 of this embodiment, the protrusion 40a as a first protrusion protrudes from the relay layer 20 as the first relay layer along the Y1 direction as a first direction in a planar view, and the protrusion 40b as a second protrusion protrudes from the relay layer 20 along the X1 direction as a second direction in a planar view.

[0084] Therefore, even if light strikes the protrusions 40a and 40b, the protrusions 40a and 40b can suppress the amount of light that is absorbed, and therefore can suppress a temperature rise due to light absorption.

[0085] The liquid crystal device 300 of this embodiment further includes a light-transmitting layer 42 provided between the capacitive electrode 40 as a second relay layer and the lens layer 34, and a relay layer 30 as a third relay layer provided inside the outer edge of the first relay layer when viewed in a planar view from the light incident side, and the relay layer 30 contains TiN.

[0086] In this way, the relay layer 30 is provided at a position covered by the relay layer 20 in a plan view seen from the light incident side, so that the relay layer 30 can be prevented from being exposed to light. Therefore, it is possible to suppress an increase in temperature of the liquid crystal device 300 including the liquid crystal layer Lc caused by light being incident on the relay layer 30 including TiN, which has a higher light absorption rate than WSi.

[0087] The liquid crystal device 300 of this embodiment includes data lines 4 extending along a Y1 direction as a first direction, scanning lines 3 extending along an X1 direction as a second direction intersecting with the Y1 direction, a transistor 1 electrically connected to the data lines 4 and the scanning lines 3, a pixel electrode 10 provided on the light incident side of the transistor 1, a lens layer 34 provided in a layer between the transistor 1 and the pixel electrode 10, and a relay layer 20 as a first relay layer provided in a layer between the lens layer 34 and the pixel electrode 10 and electrically connected to the pixel electrode 10. and a capacitive electrode 40 serving as a second relay layer provided in a layer between the transistor 1 and the lens layer 34 and electrically connected to the relay layer 20, the capacitive electrode 40 having a wide portion 40c serving as a main body overlapping with the transistor 1 in a planar view, a protrusion 40a serving as a first protrusion protruding from the wide portion 40c along the Y1 direction, and a protrusion 40b serving as a second protrusion protruding from the wide portion 40c along the X1 direction, the wide portion 40c, the protrusion 40a, and the protrusion 40b including WSi on the pixel electrode 10 side.

[0088] In this way, the capacitive electrode 40 has the wide portion 40c, the protrusion 40a, and the protrusion 40b, and the wide portion 40c, the protrusion 40a, and the protrusion 40b have the WSi layer 40w including WSi on the pixel electrode 10 side. Therefore, even if a portion of the modulated light ML that is not completely focused by the lens layer 34 hits the capacitive electrode 40, the WSi layer 40w can suppress absorption of the light. This makes it possible to prevent the temperature of the liquid crystal device 300, which includes the liquid crystal layer Lc, from increasing, thereby preventing the occurrence of spots and deterioration in light resistance, and extending the product life of the liquid crystal device 300.

[0089] 2. Embodiment 2 FIG. 11 is a schematic diagram showing an example of an electronic device, and is a schematic diagram showing a schematic configuration of a projection type display device 1000 as the electronic device. The projection display device 1000 is, for example, a three-panel projector equipped with three of the above-mentioned liquid crystal devices 300. The liquid crystal device 300R corresponds to a red display color, the liquid crystal device 300G corresponds to a green display color, and the liquid crystal device 300B corresponds to a blue display color. The control unit 1005 includes, for example, a processor and a memory, and controls the operations of the liquid crystal devices 300R, 300G, and 300B.

[0090] The illumination optical system 1001 supplies a red component RL of light emitted from an illumination device 1002, which is a light source, to the liquid crystal device 300R, a green component GL to the liquid crystal device 300G, and a blue component BL to the liquid crystal device 300B. Each of the liquid crystal devices 300R, 300G, and 300B functions as a light modulation device that modulates the respective color lights RL, GL, and BL supplied from the illumination optical system 1001 in accordance with a display image. The projection optical system 1003 combines the light emitted from the liquid crystal device 300R, the liquid crystal device 300G, and the liquid crystal device 300B, and projects the combined light onto the screen 1004.

[0091] As described above, the projection display device 1000 serving as the electronic device of this embodiment includes the liquid crystal device 300 described above. Therefore, by employing the liquid crystal device 300 that has high electrical reliability, the performance of the projection display device 1000 can be improved.

[0092] The electronic device is not limited to the exemplified three-panel projector. For example, it may be a single-panel, two-panel, or projector equipped with four or more liquid crystal devices 300. The electronic device may also be a smartphone, a PDA (Personal Digital Assistant), a camera, a television, a car navigation device, a personal computer, a display, electronic paper, a calculator, a videophone, a POS (Point of Sale), a printer, a scanner, a copier, a video player, or a device equipped with a touch panel.

[0093] Although the preferred embodiment has been described above, the present invention is not limited to the above embodiment. Furthermore, the configuration of each part of the present invention can be replaced with any configuration that exhibits the same function as the above embodiment, and any configuration can be added. [Explanation of symbols]

[0094] 1...transistor, 2...capacitive element, 3...scanning line, 4...data line, 5...capacitive line, 6...scanning line driving circuit, 7...data line driving circuit, 8...sealing member, 9...external terminal, 10...pixel electrode, 12...alignment film, 20...relay layer, 20t...TiN layer, 20w...WSi layer, 21...contact plug, 22...light-transmitting layer, 23...contact hole, 24...protective layer, 30...relay layer, 31...contact plug, 33...contact hole 34...lens layer, 34b...boundary line, 34s...lens surface, 35...lens forming layer, 36...light-transmitting layer, 40...capacitive electrode, 40a...protruding portion, 40b...protruding portion, 40c...wide portion, 40t...TiN layer, 40w...WSi layer, 41...contact plug, 42...light-transmitting layer, 43...contact hole, 50...capacitive electrode, 51...contact hole, 52...relay layer, 54...interlayer insulating layer, 56...capacitive insulating film, 60...conductive layer, 61 ...contact hole, 62...relay layer, 64...interlayer insulating layer, 70...semiconductor layer, 70a...LDD region, 70b...LDD region, 70c...channel region, 70d...drain region, 70s...source region, 71...contact hole, 72...gate insulating layer, 73...contact hole, 74...gate electrode, 76...interlayer insulating layer, 80...light shielding layer, 81...contact hole, 82...interlayer insulating layer, 90...base, 100...element substrate plate, 200... opposing substrate, 210... base, 220... insulating layer, 230... common electrode, 240... alignment film, 300, 300B, 300G, 300R... liquid crystal device, 1000... projection display device, 1001... illumination optical system, 1002... illumination device, 1003... projection optical system, 1004... screen, 1005... control unit, A1... display area, A2... peripheral area, E1... image signal, G1... scanning signal, LS... optical function layer, Lc... liquid crystal layer

Claims

1. A transistor and a pixel electrode provided on a light incident side of the transistor; a lens layer provided between the transistor and the pixel electrode; a first relay layer provided between the lens layer and the pixel electrode and electrically connected to the pixel electrode; The first relay layer includes WSi. Electro-optical device.

2. A data line extending along a first direction; a scanning line extending along a second direction intersecting the first direction; a second relay layer provided between the transistor and the lens layer and electrically connected to the first relay layer; the second relay layer has a main body portion overlapping with the transistor in a planar view, a first protruding portion protruding from the main body portion in the first direction, and a second protruding portion protruding from the main body portion in the second direction, the main body portion, the first protruding portion, and the second protruding portion including WSi; 2. The electro-optical device according to claim 1.

3. the first protruding portion protrudes from the first relay layer along the first direction in a plan view, The second protruding portion protrudes from the first relay layer along the second direction in a plan view.

3. The electro-optical device according to claim 2.

4. a light-transmitting layer provided between the second relay layer and the lens layer; a third relay layer provided between the light transmitting layer and the lens layer and located inside an outer edge of the first relay layer in a plan view seen from the light incident side, The third relay layer includes TiN.

3. The electro-optical device according to claim 2.

5. A data line extending along a first direction; a scanning line extending along a second direction intersecting the first direction; a transistor electrically connected to the data line and the scan line; a pixel electrode provided on a light incident side of the transistor; a lens layer provided between the transistor and the pixel electrode; a first relay layer provided between the lens layer and the pixel electrode and electrically connected to the pixel electrode; a second relay layer provided between the transistor and the lens layer and electrically connected to the first relay layer; the second relay layer has a main body portion overlapping with the transistor in a planar view, a first protruding portion protruding from the main body portion along the first direction, and a second protruding portion protruding from the main body portion along the second direction, the main body portion, the first protruding portion, and the second protruding portion including WSi; Electro-optical device.

6. 6. An electronic device comprising the electro-optical device according to claim 1.

Images