Plasma processing device and plasma processing method

Abstract

To uniformize distribution of plasma on a substrate during processing of the substrate.SOLUTION: A plasma processing device comprises: a chamber; a loading part which is disposed in the chamber and on which a substrate is loaded; a plasma generation section which generates plasma inside of the chamber; a gas supply section which supplies a raw material gas of the plasma into the chamber; a measurement section by which distribution information relating to distribution of the plasma in the chamber is measured and outputted; a control section which controls the plasma generation section and the gas supply section so as to repeat unit processing to the substrate; a storage section which stores a process condition including a condition of the unit processing; and a change section which changes the process condition. The measurement section measures distribution information (N) in Nth unit processing (N) (N is an integer) and when the distribution information (N) satisfies a predetermined condition, the change section changes a process condition in Mth unit processing (M) (M is any integer equal to or more than (N+1)).SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus and a plasma processing method.

Background Art

[0002] Patent Document 1 proposes "a method for manufacturing an element chip, comprising: a preparation step of preparing a substrate including a first main surface and a second main surface, a first layer, a second layer which is a semiconductor layer formed on the second main surface side of the first layer, a plurality of element regions, and a street defining the element regions; a placement step of placing the substrate on a stage installed in a processing chamber of a plasma processing apparatus with the second main surface facing; and a plasma dicing step of dividing the substrate into a plurality of element chips including the element regions by plasma generated inside the processing chamber by applying high-frequency power to an electrode included in the plasma processing apparatus. The plasma dicing step includes an etching step of forming a groove corresponding to the street in the second layer, and a deposition step of depositing a protective film on the inner wall of the groove, and repeats a cycle including the etching step and the deposition step to form a first scallop along the inner wall of the groove at a first pitch PT1, and a second scallop at a second pitch PT2 after the first etching, and satisfies the relationship PT1 < PT2."

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In order to make etching proceed uniformly within the processing region on the substrate surface, it is required to equalize the distribution of plasma on the substrate surface.

Means for Solving the Problems

[0005] One aspect of the present disclosure includes a chamber, a placement unit disposed within the chamber on which a substrate is placed, a plasma generation unit generating plasma within the chamber, a gas supply unit supplying a raw material gas for plasma into the chamber, a measurement unit measuring and outputting distribution information relating to the distribution of plasma within the chamber, a control unit controlling the plasma generation unit and the gas supply unit so as to repeat a unit process for the substrate, a storage unit storing process conditions including conditions for the unit process, and a modification unit modifying the process conditions, wherein the measurement unit measures the distribution information (N) in an Nth (N is an integer) unit process (N), and the modification unit modifies the process conditions in an Mth (M is an arbitrary integer equal to or greater than (N+1)) unit process (M) when the distribution information (N) satisfies a predetermined condition. The present invention relates to a plasma processing apparatus.

[0006] Another aspect of the present disclosure relates to a plasma processing method for repeating unit processes on a substrate using plasma generated by applying high-frequency power to a raw material gas supplied from a gas supply unit, the plasma processing method including: a measurement step of measuring and outputting distribution information regarding the distribution of plasma in the Nth unit process (N) (N is an integer); and a change step of changing the process conditions in the Mth unit process (M) (M is any integer equal to or greater than (N+1)) when the distribution information measured in the measurement step satisfies a predetermined condition. Effect of the Invention

[0007] According to the present disclosure, the distribution of plasma on the surface of a substrate can be made uniform during substrate processing. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view that illustrates a schematic diagram of a plasma processing apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a plan view showing a schematic view of a cover according to the first embodiment. [Diagram 3] 1 is a flow diagram of a plasma processing method according to a first embodiment. [Figure 4] FIG. 13 is a diagram conceptually illustrating an example of process conditions. [Diagram 5] 4 is a flow diagram of the operation of a measurement unit according to the first embodiment. FIG. [Figure 6] 4 is a flowchart of the operation of a change unit according to the first embodiment. FIG. [Figure 7] FIG. 13 is a diagram conceptually showing an example of changing process conditions. [Figure 8] FIG. 13 is a diagram conceptually illustrating another example of changing the process conditions. [Figure 9] FIG. 13 is a diagram conceptually illustrating yet another example of changing the process conditions. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The following describes an embodiment of a plasma processing apparatus and a plasma processing method according to the present disclosure. However, the present disclosure is not limited to the following examples. In the following description, specific values ​​and materials may be exemplified, but other values ​​and materials may be applied as long as the effects of the present disclosure are obtained.

[0010] Components other than the characteristic parts of the present disclosure may be those of known plasma processing apparatuses and plasma processing methods. In this specification, when a "range between numerical value A and numerical value B" is mentioned, the range includes numerical value A and numerical value B. In the following description, when a lower limit and an upper limit are exemplified for a numerical value of a specific physical property or condition, any of the exemplified lower limits and any of the exemplified upper limits can be arbitrarily combined, as long as the lower limit is not equal to or greater than the upper limit.

[0011] The present disclosure encompasses any combination of features of two or more claims arbitrarily selected from the appended claims, i.e., any combination of features of two or more claims arbitrarily selected from the appended claims can be combined unless a technical contradiction arises.

[0012] (Plasma processing equipment) The plasma processing apparatus according to the present disclosure is an apparatus for plasma processing a substrate, and includes, for example, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, a plasma CVD apparatus, and the like.

[0013] The type and form of the substrate are not particularly limited, and the substrate may be referred to as a "processing object". The substrate may be, for example, a substrate having a semiconductor layer with a first main surface and a second main surface, a plurality of element regions, and a plurality of street regions that define the element regions. The element regions may include, for example, a semiconductor layer and a wiring layer. By etching the street regions, an element chip having a semiconductor layer and a wiring layer is obtained. The substrate may be placed on a stage while being supported by a carrier. The carrier may be, for example, a resin sheet with an outer periphery held by a frame.

[0014] The plasma processing apparatus includes a chamber, a mounting section (stage), a plasma generating section, a gas supplying section, a measuring section for measuring the state of the plasma, a changing section for changing the process conditions, a control section for performing predetermined control, a memory section, and the like.

[0015] The processing of the substrate is performed in a chamber. The upper part of the chamber may have an opening facing upward, in which case the opening is blocked by a dielectric member. The chamber may be formed in a hollow cylindrical shape. The dielectric member forms a first space in the chamber by blocking the opening. The first space is a space in which the mounting part is disposed. The dielectric member may be formed in a plate shape having a horizontally extending region. The dielectric member may be composed of ceramics such as quartz, alumina, and aluminum nitride.

[0016] A through hole penetrating the dielectric member vertically may be provided in the center of the dielectric member. The through hole may be connected to a second space surrounded by a protruding portion extending upward from the dielectric member. The first space and the second space are connected by the through hole. Such a second space makes it easy to control the distribution of plasma generated in the first space. The lower end of the protruding portion is fitted into the through hole. The protruding portion may be formed in a cylindrical shape extending vertically. The protruding portion may be made of a dielectric material or other materials.

[0017] The upper end (top) of the protruding portion may have a dielectric window. The dielectric window may be transparent and may be made of, for example, quartz. The dielectric window may be used when measuring the state of plasma in the first space. The dielectric window is located above the dielectric member, i.e., away from the first space. For this reason, reaction products generated when a substrate is processed in the first space are less likely to adhere to the dielectric window.

[0018] The mounting part is provided within the chamber. The mounting part is an element on which the substrate is placed. The mounting part may have a horizontal mounting surface on which the substrate is placed. The mounting part may have a flow path through which a coolant flows for cooling the substrate during plasma processing. The mounting part may have an electrostatic adsorption mechanism for adsorbing the substrate. The mounting part may have a lower electrode to which high frequency power is applied.

[0019] The plasma generating unit is a device that generates plasma in the chamber. The plasma generating unit includes at least one induction coil, a power source that supplies power to the induction coil, a power distributor that distributes power when two or more induction coils are provided, a matching device, etc.

[0020] The gas supply unit is a facility for supplying plasma source gas into the chamber, and includes, for example, a gas flow path, a gas inlet for introducing source gas into the gas flow path, and a gas outlet for discharging the source gas into the chamber.

[0021] The measurement unit is a device that measures and outputs distribution information relating to the distribution of plasma in the chamber, and includes a predetermined sensor, a processor that processes the measurement data, an output unit, and the like.

[0022] The control unit controls the plasma generating unit and the gas supplying unit so as to repeat the unit process for the substrate. The control unit may be a central processing unit (CPU). The control unit may be configured to control the measuring unit and the changing unit.

[0023] The storage unit stores process conditions including unit processing conditions. The storage unit may store data indicating a correlation between an output of the measurement unit and a corrected process condition to be selected by the change unit in response to the output. The storage unit may store a function that receives the output as an input and outputs a corrected process condition. The storage unit may store a program executed by the control unit.

[0024] Here, the plasma processing apparatus includes a change unit that changes the process conditions when distribution information regarding the distribution of plasma satisfies a predetermined condition. The change unit changes the process conditions according to the output of the measurement unit so that the distribution of plasma on the substrate surface is made uniform during the processing of the substrate. This suppresses variations in the processing state within the processing region of the substrate. The change unit may also be referred to as a correction unit that corrects the process conditions during the processing of the substrate according to the situation. When the distribution information regarding the distribution of plasma does not satisfy the predetermined condition and there is no need to change the process conditions, the change unit does not change the process conditions.

[0025] When the predetermined condition is satisfied, it means that distribution information indicating that the plasma distribution is not sufficiently uniform is output. The change unit may have a determination unit that determines whether the predetermined condition is satisfied, i.e., whether to change the process conditions.

[0026] Specifically, the measurement unit measures and outputs distribution information (N) relating to the distribution of plasma in the Nth unit process (N) (N is an integer). The change unit changes (corrects) the process conditions in the Mth unit process (M) (M is any integer equal to or greater than (N+1)) based on the output distribution information (N). Since the unit process is repeated multiple times, the substrate is processed under the corrected process conditions from the middle of the process. By performing the above correction at an early stage of the multiple unit processes, the variation in the processing state within the processing area of ​​the substrate is significantly suppressed. Furthermore, the above correction needs to be performed at least once, but may be performed multiple times. For example, when the total number of unit processes is L, the correction may be performed a maximum of (L-1) times.

[0027] When the processing of the substrate is singulation or deep etching of the substrate, the unit processing may be a unit processing of the Bosch process. The unit processing may include, for example, a deposition step of depositing a protective film on the surface of the substrate, a protective film removal step of removing a part of the protective film to expose a part of the substrate, and a substrate etching step of etching the exposed part of the substrate. By repeating such unit processing, grooves can be formed in the substrate or the substrate can be singulated. When the substrate has a plurality of element regions and a plurality of street regions that define the element regions, grooves are formed in the street regions or the street regions are removed to singulate the substrate.

[0028] When a unit process including a deposition step, a protective film removal step, and a substrate etching step is repeated, the measurement unit preferably measures and outputs distribution information (N) regarding the distribution of plasma in the substrate etching step in the Nth (N is an integer) unit process (N). In this case, the change unit can appropriately change the conditions of the substrate etching step in any unit process (M) after the Nth based on the distribution information (N).

[0029] The change unit may change the conditions of the protective film removal step in the unit process (M) in addition to the conditions of the substrate etching step in the unit process (M). In this case, the conditions of the protective film removal step may be changed to conditions similar to those of the substrate etching step. Since the protective film removal step and the substrate etching step are continuous, the plasma discharge state in the substrate etching step can be made more stable by making the conditions of the protective film removal step and the substrate etching step as close as possible. For example, the conditions of the protective film removal step and the substrate etching step may be the same except for the high-frequency power (bias power) and time applied to the placement unit (or the lower electrode).

[0030] The measurement unit may include a first sensor for measuring the light emission on the central side of the plasma generated in the chamber, and a second sensor for measuring the light emission on the outer periphery side of the plasma generated in the chamber. In this case, distribution information can be output based on the first light emission intensity measured by the first sensor and the second light emission intensity measured by the second sensor. The first light emission intensity reflects the intensity of the plasma above the central side of the substrate, and the second light emission intensity reflects the intensity of the plasma above the outer periphery side of the substrate. The change unit changes (corrects) the process conditions in the Mth unit process (M) so that the intensities of the plasma above the central side and the outer periphery side of the substrate approach each other. After the process conditions are changed, the distribution information is further output and fed back, thereby improving the uniformity of the plasma distribution on the substrate surface during substrate processing.

[0031] The first sensor and the second sensor may both be optical sensors capable of acquiring the spectral intensity of light emitted from the plasma, and the types of the first and second sensors are not particularly limited.

[0032] When the dielectric member has a protruding portion having a dielectric window (first dielectric window) at its upper end (top), the first sensor may be provided above the first dielectric window. The first sensor measures the first emission intensity of the plasma at the center in the first space through the first dielectric window.

[0033] The height of the protrusion may be greater than the diameter of the protrusion. With this configuration, since the second space is long in the vertical direction, the reaction products generated in the first space are less likely to reach the first dielectric window. Therefore, the first dielectric window is less likely to become dirty, and the measurement accuracy of the first emission intensity of the plasma can be further improved. The first dielectric window may be installed at a position higher than the top of the induction coil. For example, the first dielectric window may be installed at a position that is not blocked by the lid that covers the induction coil. This makes it possible to measure the state of the plasma without being limited by space.

[0034] When the sidewall of the chamber has a second dielectric window, the second sensor may be provided outside the second dielectric window. The second sensor is disposed adjacent to the second dielectric window. The second sensor measures a second emission intensity of the plasma on the outer periphery side in the first space through the second dielectric window.

[0035] The second sensor may measure the emission intensity of the plasma in the vicinity of the second dielectric window as the second emission intensity. When measuring the plasma in the vicinity of the second sensor, a lens with a short focal length may be used.

[0036] The second sensor may include a convex lens that collects the light emitted from the plasma in the chamber, an optical emission detector that detects the light emitted from the plasma through the convex lens, a first driver that moves the optical emission detector on an optical axis that passes through the plasma, the second dielectric window, and the convex lens, and a second driver that moves the convex lens and the light emission detector perpendicular to the optical axis on a plane parallel to the substrate surface. The light emitted from the plasma passes through the second dielectric window and is collected by the convex lens to form a focus outside the chamber.

[0037] The first and second driving units can move the focal point of the convex lens within the area where plasma is generated. By moving the focal point, it is possible to extract the plasma light emission at any position on the substrate. A shutter may be installed to block the center of the convex lens. By using the shutter to block the light (zeroth order light) that passes through the center of the convex lens, it is possible to extract only the light that is refracted by the convex lens to form a focus. Therefore, it is possible to detect only the plasma light emission at any position with high accuracy.

[0038] The raw material gas may include, for example, a fluorine source and an inert gas. The fluorine source may be a compound containing fluorine atoms. The compound containing fluorine atoms may be sulfur hexafluoride (SF6), nitrogen trifluoride (NF3), or a fluorocarbon. These compounds containing fluorine atoms generate fluorine (F) in the plasma. The inert gas may be, for example, argon. When the raw material gas includes a fluorine source and argon, the emission intensity (spectral intensity) of fluorine generated from the fluorine source and the emission intensity (spectral intensity) of argon can be measured as the first emission intensity and the second emission intensity. As the emission intensity of fluorine, for example, a peak intensity at a wavelength of 703.7 nm in the emission spectrum of the plasma can be used. Also, as the emission intensity of argon, for example, a peak intensity at a wavelength of 750.4 nm in the emission spectrum of the plasma can be used.

[0039] From the first emission intensity, it is possible to calculate a ratio (first intensity ratio) between the emission intensity attributable to fluorine generated from the fluorine source at the central side of the plasma and the emission intensity attributable to argon at the central side of the plasma.

[0040] From the second emission intensity, it is possible to calculate a ratio (second intensity ratio) between the emission intensity attributable to fluorine generated from the fluorine source on the outer periphery side of the plasma and the emission intensity attributable to argon on the outer periphery side of the plasma.

[0041] The measurement unit may output the first intensity ratio and the second intensity ratio as distribution information. When the distribution information includes the first intensity ratio and the second intensity ratio, the change unit may change the process conditions based on the distribution information (the first intensity ratio and the second intensity ratio) and pre-acquired data. The pre-acquired data may be data indicating the interdependence of the ratio of the emission intensity caused by fluorine to the emission intensity caused by argon (F / Ar ratio) and the etching rate of the substrate.

[0042] Because reaction products adhere to the inner surfaces of the first and second dielectric windows, the measured values ​​of the fluorine emission intensity and argon emission intensity change over time. On the other hand, the F / Ar ratio is not affected by contamination of the inner surfaces of the first and second dielectric windows, so it is possible to measure the change in the fluorine emission intensity purely in the plasma.

[0043] Data showing the interdependence between the F / Ar ratio and the etching rate of the substrate is preferably measured during a stable period of the plasma, not during an unstable period from when the plasma is ignited until the plasma is stabilized. For example, the average value and standard deviation of the first emission intensity and the second emission intensity (the first intensity ratio and the second intensity ratio) during the stable period are calculated, and the etching rate of the substrate is measured. The etching rate is calculated, for example, by measuring the etching amount of the substrate using a film thickness measuring device or the like, and dividing the etching amount by the etching time. Several tens to several hundreds of substrates may be etched, and the average value and standard deviation of the F / Ar ratio and the etching rate may be calculated.

[0044] Similarly, it is desirable to calculate the average value and standard deviation for equipment parameters other than the parameters related to the emission intensity. Equipment parameters can be, for example, the high-frequency power supply of the plasma generating unit, the distributor, the matching unit (e.g., the variable capacitor capacity), the gas flow rate of the gas inlet of the gas supply unit, etc. This makes it possible to obtain data showing the interdependence between the F / Ar ratio and the equipment parameters.

[0045] The plasma generating unit may include a first coil (inner coil) for generating plasma on the central side of the chamber, a second coil (outer coil) for generating plasma on the outer periphery side of the chamber, and a power supply unit for supplying high frequency power to each of the first coil and the second coil. In this case, the process condition may include a first set value related to the power supplied from the power supply unit to each of the first coil and the second coil (e.g., the ratio between the power supplied to the first coil and the power supplied to the second coil). The change unit may change the first set value in the Mth unit process (M) based on the plasma distribution information. This corrects the power supplied from the power supply unit to the first coil and the second coil, improving the uniformity of the plasma.

[0046] The first coil is disposed on the upper side (outside the first space) of the dielectric member toward the center of the dielectric member. The first coil is disposed, for example, in an annular region excluding the upper protrusion of the dielectric member so as to face the first space. The magnetic field generated by the first coil mainly acts on the source gas on the center side of the first space via the dielectric member.

[0047] The second coil may be disposed outside the first coil in the vertical direction so as not to overlap with the first coil. The second coil is disposed, for example, on the outer periphery of the annular region in which the first coil is disposed above the dielectric member so as to face the first space. With this configuration, the distribution of plasma on the substrate can be controlled with a high degree of freedom by adjusting the power supplied to the first and second coils, and the uniformity of the distribution of plasma on the substrate surface can be improved.

[0048] The power supply unit may include one high frequency power source, a matching box connected to an output end of the high frequency power source, and a distributor connected to the opposite side of the matching box to the high frequency power source and distributing the total power supplied from the high frequency power source to the first coil and the second coil at a predetermined distribution ratio. The control unit is preferably configured to be able to control the distribution ratio of the distributor. In this case, the first set value related to the power may include a distribution ratio that determines the ratio of the power supplied to the first coil and the power supplied to the second coil. That is, the change unit may change the distribution ratio in the Mth unit process (M) based on the plasma distribution information. When the first coil and the second coil are connected in parallel to one high frequency power source via a matching box, the device configuration is simpler than when the first coil and the second coil are connected to each high frequency power source, only one matching box is required, and the stability of the plasma after the process conditions are changed is also improved. The first set value may further include the total power output from the high frequency power source.

[0049] In changing the process conditions, only the distribution ratio may be changed without changing the total power output from one high frequency power supply. That is, the change unit may change the distribution ratio in the Mth unit process (M) based on the plasma distribution information without changing the total power. When adjusting the plasma distribution state by controlling only the distribution ratio, more responsive control is possible than when each of the first and second coils is equipped with a power supply and a matching device.

[0050] The gas supply unit may include a first supply unit that supplies a source gas to the center side of the chamber, and a second supply unit that supplies a source gas to the outer periphery side of the chamber. In this case, the process conditions may include a second set value for the source gas supplied to the chamber from each of the first supply unit and the second supply unit (e.g., a ratio between a gas flow rate supplied from the first supply unit and a gas flow rate supplied from the second supply unit). The change unit may change the second set value in the Mth unit process (M) based on the plasma distribution information. This corrects the flow rate ratio of the source gas supplied into the chamber from the first supply unit and the second supply unit, improving the uniformity of the plasma.

[0051] The first supply unit may have a first gas discharge unit in a region adjacent to the dielectric member and facing the first coil. The second supply unit may have a second gas discharge unit in a region adjacent to the dielectric member and facing the second coil. The raw material gas is supplied from the first gas discharge unit to the vicinity of the first coil and from the second gas discharge unit to the vicinity of the second coil, whereby plasma is generated with high efficiency.

[0052] (Plasma treatment method) The plasma processing method according to the present disclosure is a method for processing a substrate using the above-mentioned plasma processing apparatus, and is a plasma processing method that repeats unit processing on a substrate by utilizing plasma generated by applying high frequency power to a raw material gas supplied from a gas supply unit. This plasma processing method includes a measurement step of measuring and outputting distribution information related to the plasma distribution in the Nth (N is an integer) unit processing (N), and a change step of changing the process conditions in the Mth (M is any integer equal to or greater than (N+1)) unit processing (M) when the distribution information measured in the measurement step satisfies a predetermined condition.

[0053] As described above, the unit process may include a deposition step of depositing a protective film on the surface of the substrate, a protective film removal step of removing a part of the protective film to expose a part of the substrate, and a substrate etching step of etching the exposed part of the substrate. In this case, the change step may be a step of changing at least the conditions of the substrate etching step in the unit process (M) based on the distribution information (N). The change step may further change the conditions of the protective film removal step in the unit process (M).

[0054] The measuring step may include a first measuring step of measuring an emission intensity on the central side of the plasma generated in the chamber with a first sensor, and a second measuring step of measuring an emission intensity on the outer periphery side of the plasma generated in the chamber with a second sensor. In this case, distribution information may be output based on the first emission intensity measured by the first sensor and the second emission intensity measured by the second sensor.

[0055] The source gas may include a fluorine source and argon. In this case, in the measuring step, a first intensity ratio and a second intensity ratio may be output as distribution information. The first intensity ratio is a ratio between an emission intensity caused by fluorine generated from the fluorine source measured by a first sensor and an emission intensity caused by argon. The second intensity ratio is a ratio between an emission intensity caused by fluorine measured by a second sensor and an emission intensity caused by argon. In the changing step, the process conditions may be changed based on the distribution information (the first intensity ratio and the second intensity ratio) and data acquired in advance. The data acquired in advance may include interdependency data between the ratio of the emission intensity caused by fluorine and the emission intensity caused by argon and the etching rate of the substrate.

[0056] The plasma may be generated by a plasma generating unit including a first coil for generating plasma at the center of the chamber, a second coil for generating plasma at the outer periphery of the chamber, and a power supply unit for supplying high frequency power to each of the first coil and the second coil. In this case, the process conditions may include a first set value related to the power supplied from the power supply unit to each of the first coil and the second coil. In the changing step, the first set value in the Mth unit process (M) may be changed based on the distribution information (the first intensity ratio and the second intensity ratio).

[0057] The power supply unit may include one high frequency power source, a matching box connected to an output end of the high frequency power source, and a distributor connected to the opposite side of the matching box from the high frequency power source and distributing the total power supplied from the high frequency power source to the first coil and the second coil at a predetermined distribution ratio. In this case, the first set value may include the distribution ratio. In the changing step, the distribution ratio in the Mth unit process (M) may be changed based on the distribution information (first intensity ratio and second intensity ratio). In the changing step, only the distribution ratio may be changed without changing the total power.

[0058] The gas supply unit may include a first supply unit that supplies a source gas to the center side of the chamber, and a second supply unit that supplies the source gas to the outer periphery side of the chamber. In this case, the process conditions may include second set values ​​for the source gases supplied to the chamber from the first supply unit and the second supply unit. In the changing step, the second set value in the Mth unit process (M) may be changed based on the distribution information (the first intensity ratio and the second intensity ratio).

[0059] In the following, an example of a plasma processing apparatus and a plasma processing method according to the present disclosure will be specifically described with reference to the drawings. The above-mentioned components and steps can be applied to the components and steps of the plasma processing apparatus and the plasma processing method of the example described below. The components and steps of the plasma processing apparatus and the plasma processing method of the example described below can be modified based on the above description. In addition, the matters described below may be applied to the above embodiment. Among the components and steps of the plasma processing apparatus and the plasma processing method of the example described below, the components and steps that are not essential to the plasma processing apparatus and the plasma processing method according to the present disclosure may be omitted. Note that the figures shown below are schematic and do not accurately reflect the shapes and numbers of actual members.

[0060] First Embodiment A first embodiment of the present disclosure will be described. A plasma processing apparatus 10 of the present embodiment is an apparatus for performing plasma processing on a substrate (e.g., a semiconductor substrate). The plasma processing apparatus 10 of the present embodiment is a plasma dicer, but is not limited thereto.

[0061] As shown in FIG. 1, a plasma processing apparatus 10 includes a chamber 12, a mounting section (stage) 11 disposed within the chamber 12 on which a substrate S is placed, a plasma generation section 18 which generates plasma within the chamber, a gas supply section 19 which supplies a raw material gas for the plasma into the chamber, a measurement section 20 which measures and outputs distribution information regarding the distribution of plasma within the chamber, and a computer 21 which has a control section 211, a memory section 212, and a change section 213.

[0062] The control unit 211 controls the plasma generating unit and the gas supplying unit to repeat unit processing on the substrate. The memory unit 212 stores process conditions including the conditions of the unit processing. The change unit 213 changes the process conditions when the distribution information satisfies a predetermined condition. The operations of the control unit 211 and the change unit 213 may be executed by a central processing unit (CPU) included in the computer 21. The memory unit 212 may store programs executed by the control unit 211 and the change unit 213.

[0063] The substrate S is placed on the mounting part 11 with its outer periphery supported by a resin sheet R held by a frame F. The mounting part 11 has a horizontal mounting surface 11a on which the substrate is placed. The mounting part 11 has a flow path through which a coolant flows to cool the substrate during plasma processing. The mounting part 11 has an electrostatic adsorption mechanism for adsorbing the substrate. The mounting part 11 has a lower electrode to which high-frequency power is applied.

[0064] The chamber 12 is hollow cylindrical, and has an opening 12a at its top that opens upward. The opening 12a is blocked by a dielectric member 13. A first space S1 is formed in the chamber 12 by blocking the opening with the dielectric member 13. The first space S1 is a space in which the mounting part 11 is disposed. The dielectric member 13 is formed in a plate shape having a horizontally extending region, and has a recess 13b on the upper surface. The chamber 12 has an exhaust port 12b for exhausting the raw material gas used in the plasma processing. An exhaust device is connected to this exhaust port 12b. The chamber 12 is made of a conductive member (e.g., metal). The dielectric member 13 is made of, for example, quartz.

[0065] A through hole is provided in the center of the dielectric member 13, vertically penetrating the dielectric member 13, and the through hole communicates with a second space S2 surrounded by a cylindrical protrusion 15 extending upward from the dielectric member 13. The second space S2 facilitates control of the distribution of plasma generated in the first space S1. A first dielectric window 15a is provided at the upper end (top) of the protrusion 15. The protrusion 15 is made of, for example, aluminum nitride.

[0066] The plasma generating unit 18 includes a high frequency power supply 181, a matching box 182, a distributor 183, a first coil 184A, and a second coil 184B. High frequency power (e.g., AC power of 3 to 30 MHz) output from the high frequency power supply 181 is distributed at a predetermined distribution ratio by the distributor 183 via the matching box 182 having a variable capacitor, and is connected to one end of the first coil 184A and the second coil 184B. The other ends of the first coil 184A and the second coil 184B are grounded via the conductive chamber 12.

[0067] The distributor 183 has a first distribution circuit 183A that distributes a portion of the high frequency power output by the high frequency power supply 181 to the first coil 184A, and a second distribution circuit 183B that distributes a portion of the high frequency power to the second coil 184B. The first distribution circuit 183A has, for example, a first variable capacitor and an inductor connected in parallel with each other, and a capacitor connected in series to the rear stage of both. The second distribution circuit 183B has, for example, a second variable capacitor. The first distribution circuit 183A and the second distribution circuit 183B are connected in parallel with each other.

[0068] The distribution ratio of the high frequency power to first coil 184A and second coil 184B is controlled by control unit 211. Control unit 211 changes the distribution ratio through control of distributor 183, for example, by adjusting the capacitance value of each variable capacitor included in distributor 183. Specifically, when the distribution information output by the measurement unit requests a change in the process conditions, a first setting value related to the distribution ratio is changed by the change unit, and control unit 211 changes the distribution ratio in accordance with the changed first setting value. At this time, the distribution ratio may be changed without changing the total power output by high frequency power supply 181.

[0069] Matching box 182 is configured to match the impedance (input impedance) of high frequency power supply 181 with the impedance (load impedance) downstream of matching box 182. Matching box 182 may have at least one variable capacitor, and may perform impedance matching by changing the capacitance value of the variable capacitor. Matching box 182 may be an automatic matching box capable of automatically performing impedance matching.

[0070] The first coil 184A is disposed on the upper side of the dielectric member 13 (outside the first space) and toward the center of the dielectric member 13. The first coil 184A is disposed, for example, so as to face the first space in an annular region excluding the protruding portion on the upper side of the dielectric member 13. The magnetic field generated by the first coil 184A mainly acts on the source gas on the center side of the first space via the dielectric member.

[0071] The second coil 184B is disposed outside the first coil 184A so as not to overlap with the first coil 184A in the vertical direction and to face the first space. The second coil 184B is composed of one or more conductors each extending in a spiral shape in the circumferential direction. A part of the outer circumferential side of the second coil 184B is disposed inside the recess 13b formed in the dielectric member 13.

[0072] The gas supply unit 19 may include a first supply unit 19A that supplies the source gas to the center side of the chamber, and a second supply unit 19B that supplies the source gas to the outer periphery side of the chamber. The first supply unit 19A includes a first gas flow path 192A, a first flow controller 193A, and a first gas discharge unit 194A. The second supply unit 19B includes a second gas flow path 192B, a second flow controller 193B, and a second gas discharge unit 194B. The first supply unit 19A is connected to a first gas storage unit, and the second supply unit 19B is connected to a second gas storage unit, and the source gas is stored in each gas storage unit. The source gas stored in the first gas storage unit passes through the first gas flow path 192A while being flow-controlled by the first flow controller 193A, and is discharged from the first gas discharge unit 194A into the chamber 12. The source gas stored in the second gas storage portion passes through the second gas flow passage 192B while its flow rate is controlled by the second flow rate controller 193B, and is released into the chamber 12 from the second gas release portion 194B.

[0073] The lower surface of the dielectric member 13 is covered by the cover 14. A second through hole opening 14a is provided in the center of the cover 14 so as to overlap with the through hole (first through hole 13a) of the dielectric member 13. The cover 14 is made of, for example, aluminum nitride. The cover 14 has a first gas flow path 192A that supplies raw material gas to a region facing the first coil 184A in the first space S1, and a second gas flow path 192B that supplies raw material gas to a region facing the second coil 184B in the first space S1. The first gas flow path 192A and the second gas flow path 192B are formed by grooves or recesses formed on the upper surface of the cover 14. Thus, the first gas flow path 192A and the second gas flow path 192B are formed between the dielectric member 13 and the cover 14.

[0074] 2 is a plan view showing a cover according to an embodiment. The first gas flow passage 192A communicates with the outside of the chamber 12 and communicates with the first space S1 via a first gas release section (inner gas hole) 194A penetrating the cover 14 in the thickness direction. The first gas release sections 194A are arranged at intervals in the circumferential direction at positions overlapping the center side of the dielectric member 13 (see FIG. 2). The first gas release sections 194A are arranged at intervals in the radial direction (left-right direction in FIG. 1). The first gas flow passage 192A is formed between the cover 14 and the dielectric member 13. A raw material gas is supplied to the first gas flow passage 192A from a first gas storage section.

[0075] The second gas flow passage 192B communicates with the outside of the chamber 12 and also communicates with the first space S1 via a second gas release section (outer gas hole) 194B penetrating the cover 14 in the thickness direction. A plurality of second gas release sections 194B are arranged at intervals in the circumferential direction at positions overlapping with the outer periphery side of the dielectric member 13 (see FIG. 2). A plurality of second gas release sections 194B are arranged at intervals in the radial direction (left-right direction in FIG. 1). The second gas flow passage 192B is formed between the cover 14 and the dielectric member 13. A raw material gas is supplied to the second gas flow passage 192B from a second gas storage section.

[0076] The cover 14 has a first convex portion 141 on the lower surface between the first gas release portion 194A and the second gas release portion 194B. The cover 14 has a second convex portion 142 inside the first gas release portion 194A. The cover 14 has a third convex portion 143 outside the second gas release portion 194B. The first convex portion 141, the second convex portion 142, and the third convex portion 143 are each formed in a ring shape, but are not limited to this. The first gas flow path 192A and the second gas flow path 192B are separated from each other by the first convex portion 141, the second convex portion 142, and the third convex portion 143. This makes it easy to control the flow rate of the raw material gas released from the first supply portion 19A and the second supply portion 19B into the chamber 12 with high precision.

[0077] The flow rates of the source gases discharged from the first supply unit 19A and the second supply unit 19B into the chamber 12 are controlled by the control unit 211. The control unit 211 adjusts each flow rate through the control of the first flow rate controller 193A and the second flow rate controller 193B. Specifically, when the distribution information output by the measurement unit requests a change in the process conditions, the change unit changes a second set value related to the ratio between the gas flow rate supplied from the first supply unit 19A and the gas flow rate supplied from the second supply unit 19B, and the control unit 211 changes each flow rate according to the changed second set value.

[0078] The measurement unit 20 includes a first sensor 201A, a second sensor 201B, and a data processing unit 202 that processes and outputs measurement data. The operation of the data processing unit 202 may be executed by a central processing unit (CPU) included in a computer. The storage unit 212 may store a program executed by the data processing unit 202.

[0079] The first sensor 201A is disposed above the first dielectric window 15a provided at the end of the protrusion and measures the light emission on the central side of the plasma. The second sensor 201B is disposed outside the second dielectric window 12c provided in the sidewall of the chamber and measures the light emission on the outer periphery of the plasma.

[0080] The first sensor 201A includes a convex lens (not shown) that collects the light emitted from the plasma in the chamber, and an emission detector (not shown) that detects the light emitted from the plasma through the convex lens. The first sensor 201A may include a collimator lens instead of the convex lens.

[0081] The second sensor 201B includes a convex lens 203B that collects the light emitted from the plasma in the chamber, and an optical emission detector 204B that detects the light emitted from the plasma through the convex lens 203B. When measuring the plasma near the second dielectric window 12c, the convex lens 203B with a short focal length may be used. However, in order to detect the light emitted from the plasma at any position on the outer periphery side, the above-mentioned mechanisms such as the first driving unit and the second driving unit may be used.

[0082] The first sensor 201A and the second sensor 201B of the measurement unit 20 measure, for example, the emission intensity of fluorine and the emission intensity of argon in any N-th (N is an integer) unit process (N) among the unit processes repeated multiple times. The data processing unit 202 of the measurement unit 20 converts the data measured by the first sensor 201A and the second sensor 201B into, for example, an F / Ar ratio, and outputs it as distribution information (N). When it is determined that the distribution information (N) (F / Ar ratio) satisfies a predetermined condition (when distribution information indicating that the plasma distribution is not sufficiently uniform is output), the change unit 213 changes the process conditions in the M-th (M is an arbitrary integer equal to or greater than (N+1)) unit process (M).

[0083] Fig. 3 is a flow diagram of a plasma processing method according to an embodiment. The flow in Fig. 3 is a flow of a Bosch process, the unit process of which includes a deposition step (S1) of depositing a protective film on a surface of a substrate, a protective film removal step (S2) of removing a part of the protective film to expose a part of the substrate, and a substrate etching step (S3) of etching the exposed part of the substrate.

[0084] In the substrate etching step (S3), a part of the substrate (silicon layer) is etched by plasma to form a recess in the substrate. A patterned mask is formed on the substrate in advance. In the substrate etching step (S3), a street area of ​​the substrate exposed through the mask is etched. In the deposition step (S1), a protective layer is formed inside the formed recess. In the protective layer removal step (S2), the protective layer present at the bottom of the recess is etched by plasma, while the protective film present on the sidewall of the recess remains, protecting the sidewall. By repeating such unit processes, the substrate is deeply excavated.

[0085] The plasma raw material gas contains a fluorine source and argon. The argon contained in the raw material gas is introduced to make it easier to grasp the state of the plasma. The argon may be present at a concentration that does not significantly affect the process and allows the emission intensity to be confirmed. The argon concentration in the raw material gas may be, for example, in the range of 3% to 5% by volume. The fluorine source may be CF4, C4F8, CHF3, CH2F2, NF3, XeF2, XeF6, SF6, or the like. These fluorine sources may be used alone or in combination of two or more. In addition to or instead of Ar, an inert gas such as He may be used, and an oxygen-containing gas such as O2, CO, or CO2 may be used.

[0086] An example of process conditions is conceptually shown in Fig. 4. The process conditions include the total power output from the high frequency power supply 181, the power distribution ratio to the first coil 184A and the second coil 184B by the distributor 183, the type of source gas, the high frequency power (bias power) applied to the mounting unit 11, the gas pressure in the chamber, the flow rate of the source gas, the flow rate ratio of the source gas supplied from the first supply unit 19A and the second supply unit 19B into the chamber 12, the time of each step, etc. Note that the process conditions for the protective film removal step (S2) and the substrate etching step (S3) may be the same except for the bias power and time.

[0087] The deposition step is performed under the following processing conditions: for example, C4F8 is supplied as a source gas at a flow rate of 150 to 300 sccm and a flow rate ratio of 0.1 to 10, the pressure inside the chamber is adjusted to 15 to 25 Pa, the total power output from the high frequency power supply 181 is 1500 to 5000 W, the distribution ratio is 0.1 to 10, the bias power is 0 to 50 W, and the processing time is 2 to 10 seconds.

[0088] The protective film removal step is performed under the following processing conditions: for example, a mixed gas of SF6 and Ar is supplied as a raw material gas at a flow rate of 200 to 600 sccm and a flow rate ratio of 0.1 to 10, the pressure inside the chamber is adjusted to 5 to 25 Pa, the total power output from the high frequency power supply 181 is 1500 to 5000 W, the distribution ratio is 0.1 to 10, the bias power is 80 to 800 W, and the processing time is 1 to 5 seconds.

[0089] The etching step is performed under the following processing conditions: for example, a mixed gas of SF6 and Ar is supplied as a raw material gas at a flow rate of 200 to 600 sccm and a flow rate ratio of 0.1 to 10, the pressure inside the chamber is adjusted to 5 to 25 Pa, the total power output from the high frequency power supply 181 is 1500 to 6000 W, the distribution ratio is 0.1 to 10, the bias power is 20 to 500 W, and the processing time is 4 to 15 seconds.

[0090] In the plasma processing method, in any Nth (N is an integer) unit process (N), distribution information (N) regarding the distribution of plasma is measured by the measuring unit 20 (S4, S5). For example, the distribution information may be measured by the measuring unit 20 every time the unit process is performed any one of 1 to 10 times.

[0091] 5 is a flow diagram of the operation of the measurement unit according to one embodiment. For example, when the control unit 211 notifies the measurement unit 20 of the timing of the substrate etching step (S3) in the Nth (N is an integer) unit process (N) (Y in S11), the first sensor 201A and the second sensor 201B acquire the emission intensity of the plasma (S12, S13). When the raw material gas of the plasma contains a fluorine source and argon, the emission intensity of fluorine and the emission intensity of argon may be measured. The data processing unit 202 of the measurement unit 20 converts the data measured by the first sensor 201A and the second sensor 201B into a first intensity ratio (F / Ar ratio) and a second intensity ratio (F / Ar ratio), respectively, and outputs them as distribution information (N) (S14).

[0092] When the measurement unit 20 outputs distribution information (N) (e.g., F / Ar ratio) indicating that the plasma distribution is not sufficiently uniform, the change unit 213 changes the process conditions (e.g., the first set value or the second set value) in the M=(N+1)th unit process (M) (S6).

[0093] 6 is a flow diagram of the operation of the change unit according to an embodiment. For example, the change unit 213 compares the first intensity ratio with the second intensity ratio (S21). Then, when the ratio (R / R0) between the ratio (R) of the first intensity ratio and the second intensity ratio and the ideal value (R0) is different from the predetermined threshold value (th) or more (R / R0<1-th, or R / R0>1+th), the change unit 213 changes the process conditions (substrate etching step, etc.) in the subsequent unit process (M) (S22), and the unit process (M) is performed under the changed conditions (S7). Here, the ideal value (R0) is the ratio between the first intensity ratio and the second intensity ratio when the plasma distribution is uniform. When the unit process is repeated a predetermined number of times (Y in S8), the flow of the plasma processing method ends (see FIG. 3).

[0094] Fig. 7 is a conceptual diagram showing an example of changing process conditions, in which the distribution ratio of the substrate etching step (S3), which is the first set value for the M=(N+1)th time, is changed based on the distribution information (N).

[0095] Fig. 8 is a conceptual diagram showing another example of changing the process conditions. Fig. 8 shows an example in which the flow rate ratio of the source gases supplied from the first supply unit 19A and the second supply unit 19B into the chamber 12 in the substrate etching step (S3), which is the second set value for the M=(N+1)th time, is changed based on the distribution information (N).

[0096] Fig. 9 is a conceptual diagram showing yet another example of changing the process conditions, in which the distribution ratios of the protective film removing step (S2) and the substrate etching step (S3), which are the first set values ​​for the M=(N+1)th time, are simultaneously changed based on the distribution information (N).

[0097] (Additional Note) The above description discloses the following techniques. (Technology 1) A chamber; a mounting part disposed in the chamber and on which a substrate is mounted; A plasma generating unit that generates plasma in the chamber; a gas supply unit for supplying a plasma source gas into the chamber; a measurement unit that measures and outputs distribution information regarding a distribution of plasma in the chamber; a control unit that controls the plasma generating unit and the gas supplying unit so as to repeat a unit process for the substrate; a storage unit that stores process conditions including conditions of the unit processing; A change unit for changing the process conditions; Equipped with the measurement unit measures the distribution information (N) in the unit process (N) for an Nth time (N is an integer); The change unit changes the process conditions in the Mth (M is any integer equal to or greater than (N+1)) unit process (M) when the distribution information (N) satisfies a predetermined condition. (Technology 2) The unit process includes: a deposition step of depositing a protective film on a surface of the substrate; a protective film removing step of removing a portion of the protective film to expose a portion of the substrate; a substrate etching step of etching the exposed portion of the substrate; having The plasma processing apparatus according to technique 1, wherein the change unit changes at least conditions of the substrate etching step in the unit process (M) based on the distribution information (N). (Technology 3) The plasma processing apparatus according to technique 2, wherein the change unit further changes conditions for the protective film removing step in the unit process (M). (Technology 4) The measurement unit includes: a first sensor for measuring light emission at a central portion of the plasma generated in the chamber; a second sensor for measuring light emission on an outer periphery of the plasma generated in the chamber; Equipped with The plasma processing apparatus according to any one of Techniques 1 to 3, wherein the distribution information is output based on a first emission intensity measured by the first sensor and a second emission intensity measured by the second sensor. (Technology 5) the source gas comprises a fluorine source and argon; the measurement unit outputs the first intensity ratio and the second intensity ratio as the distribution information; the first intensity ratio is a ratio between an emission intensity caused by fluorine generated from the fluorine source and an emission intensity caused by the argon, the emission intensity being measured by the first sensor; the second intensity ratio is a ratio between the luminescence intensity attributable to the fluorine measured by the second sensor and the luminescence intensity attributable to the argon; The plasma processing apparatus according to Technology 4, wherein the change unit changes the process conditions based on the distribution information and interdependency data between a ratio of a light emission intensity caused by fluorine and a light emission intensity caused by argon, which is previously acquired, and an etching rate of the substrate. (Technology 6) The plasma generating unit includes: A first coil for generating plasma in a central portion of the chamber; A second coil for generating plasma on an outer periphery of the chamber; a power supply unit that supplies high-frequency power to each of the first coil and the second coil; the process conditions include a first set value related to power supplied from the power supply unit to each of the first coil and the second coil; 6. The plasma processing apparatus according to any one of Techniques 1 to 5, wherein the change unit changes the first set value in an Mth unit process (M) based on the distribution information. (Technology 7) The power supply unit includes: One high frequency power source, a matching box connected to an output end of the high frequency power supply; a distributor connected to the matching box on the opposite side to the high frequency power supply and distributing a total power supplied from the high frequency power supply to the first coil and the second coil at a predetermined distribution ratio; Equipped with The control unit is configured to be able to control the distribution ratio of the distributor, The first set value includes the distribution ratio, The plasma processing apparatus according to technique 6, wherein the change unit changes the distribution ratio in the Mth unit process (M) based on the distribution information. (Technology 8) The plasma processing apparatus according to technique 7, wherein the change unit changes the distribution ratio in the Mth unit process (M) based on the distribution information without changing the total power. (Technology 9) The gas supply unit includes: a first supply unit that supplies the source gas to a center side of the chamber; a second supply unit that supplies the source gas to an outer periphery of the chamber; Equipped with the process conditions include second set values ​​for the source gas supplied to the chamber from each of the first supply unit and the second supply unit; 9. The plasma processing apparatus according to any one of Techniques 1 to 8, wherein the change unit changes the second set value in an Mth unit process (M) based on the distribution information. (Technology 10) A plasma processing method for repeating unit processing of a substrate by using plasma generated by applying high frequency power to a raw material gas supplied from a gas supply unit, comprising: a measuring step of measuring and outputting distribution information regarding the distribution of plasma in the Nth (N is an integer) unit process (N); a changing step of changing the process conditions in the unit process (M) for an Mth time (M is an arbitrary integer equal to or greater than (N+1)) when the distribution information measured in the measuring step satisfies a predetermined condition; The plasma processing method comprises: (Technology 11) The unit process includes: a deposition step of depositing a protective film on a surface of the substrate; a protective film removing step of removing a portion of the protective film to expose a portion of the substrate; a substrate etching step of etching the exposed portion of the substrate; having The plasma processing method according to technique 10, wherein the changing step is a step of changing conditions of at least the substrate etching step in the unit process (M) based on the distribution information (N). (Technology 12) The plasma processing method according to technique 11, wherein the changing step further changes conditions for the protective film removing step in the unit process (M). (Technology 13) The measuring step includes: a first measuring step of measuring light emission from a central portion of the plasma generated in the chamber with a first sensor; a second measuring step of measuring light emission on an outer periphery side of the plasma generated in the chamber with a second sensor; outputting the distribution information based on a first emission intensity measured by the first sensor and a second emission intensity measured by the second sensor; The plasma processing method according to any one of Techniques 10 to 12, further comprising: (Technology 14) the source gas comprises a fluorine source and argon; the measuring step includes outputting the first intensity ratio and the second intensity ratio as the distribution information; the first intensity ratio is a ratio between an emission intensity caused by fluorine generated from the fluorine source and an emission intensity caused by the argon, the emission intensity being measured by the first sensor; the second intensity ratio is a ratio between the luminescence intensity attributable to the fluorine measured by the second sensor and the luminescence intensity attributable to the argon; The plasma processing method according to technology 13, wherein the changing step changes the process conditions based on the distribution information and interdependency data between a ratio of an emission intensity caused by fluorine and an emission intensity caused by argon, which has been previously acquired, and an etching rate of the substrate. (Technology 15) The plasma is A first coil for generating plasma in a central portion of the chamber; A second coil for generating plasma on an outer periphery of the chamber; a plasma generating unit including a power supply unit that supplies high-frequency power to each of the first coil and the second coil; the process conditions include a first set value related to power supplied from the power supply unit to each of the first coil and the second coil; 15. The plasma processing method according to any one of techniques 10 to 14, wherein the changing step changes the first set value in the Mth unit process (M) based on the distribution information. (Technology 16) The power supply unit includes: One high frequency power source, a matching box connected to an output end of the high frequency power supply; a distributor connected to the matching box on the opposite side to the high frequency power supply and distributing a total power supplied from the high frequency power supply to the first coil and the second coil at a predetermined distribution ratio; Equipped with The first set value includes the distribution ratio, The plasma processing method according to technique 15, wherein the changing step changes the distribution ratio in the Mth unit process (M) based on the distribution information. (Technology 17) The plasma processing method according to technique 16, wherein the changing step changes the distribution ratio in the Mth unit process (M) based on the distribution information without changing the total power. (Technology 18) The gas supply unit includes: a first supply unit that supplies the source gas to a center side of the chamber; a second supply unit that supplies the source gas to an outer periphery of the chamber; Equipped with the process conditions include second set values ​​for the source gas supplied to the chamber from each of the first supply unit and the second supply unit; 18. The plasma processing method according to any one of techniques 10 to 17, wherein the changing step changes the second set value in the Mth unit process (M) based on the distribution information. [Industrial Applicability]

[0098] The present disclosure can be used in a plasma processing apparatus and a plasma processing method. [Explanation of symbols]

[0099] 10: Plasma processing equipment 11: Placement section 11a: Placement surface 12: Chamber 12a:Aperture 12b: Exhaust port 12c: second dielectric window 13: Dielectric material 13a: First through hole 13b: Recess 14: Cover 14a: Second through hole 141: First convex part 142: Second convex part 143: Third convex part 15:Protrusion 15a: first dielectric window 18: Plasma generation unit 181:High frequency power supply 182: Matching box 183:Distributor 183A: 1st distribution circuit 183B: 2nd distribution circuit 184A: First coil 184B: Second coil 19: Gas supply section 19A: First gas supply unit 192A: First gas flow path 193A: First flow controller 194A: First gas discharge section 19B: Second gas supply section 192B: Second gas flow path 193B: Second flow controller 194B: Second gas discharge section 20: Measuring part 201A: First sensor 201B: Second sensor 202: Data processing unit 203B: Convex lens 204B: Luminescence detection unit 21: Computer 211: Control unit 212: Storage section 213: Changes S1: 1st space S2:Second space F: Frame R: Resin sheet S: Substrate

Claims

1. A chamber; a mounting part disposed in the chamber and on which a substrate is mounted; A plasma generating unit that generates plasma in the chamber; a gas supply unit for supplying a plasma source gas into the chamber; a measurement unit that measures and outputs distribution information regarding a distribution of plasma in the chamber; a control unit that controls the plasma generating unit and the gas supplying unit so as to repeat a unit process for the substrate; a storage unit that stores process conditions including conditions of the unit processing; A change unit for changing the process conditions; Equipped with the measurement unit measures the distribution information (N) in the unit process (N) for an Nth time (N is an integer); The change unit changes the process conditions in the Mth (M is any integer equal to or greater than (N+1)) unit process (M) when the distribution information (N) satisfies a predetermined condition.

2. The unit process includes: a deposition step of depositing a protective film on a surface of the substrate; a protective film removing step of removing a portion of the protective film to expose a portion of the substrate; a substrate etching step of etching the exposed portion of the substrate; having The plasma processing apparatus according to claim 1 , wherein said change section changes at least a condition of said substrate etching step in said unit process (M) based on said distribution information (N).

3. The plasma processing apparatus according to claim 2 , wherein the change unit further changes conditions for the protective film removing step in the unit process (M).

4. The measurement unit includes: a first sensor for measuring light emission at a central portion of the plasma generated in the chamber; a second sensor for measuring light emission on an outer periphery of the plasma generated in the chamber; Equipped with The plasma processing apparatus according to claim 1 , wherein the distribution information is output based on a first emission intensity measured by the first sensor and a second emission intensity measured by the second sensor.

5. the source gas comprises a fluorine source and argon; the measurement unit outputs the first intensity ratio and the second intensity ratio as the distribution information; the first intensity ratio is a ratio between an emission intensity caused by fluorine generated from the fluorine source and an emission intensity caused by the argon, the emission intensity being measured by the first sensor; the second intensity ratio is a ratio between an emission intensity attributable to the fluorine measured by the second sensor and an emission intensity attributable to the argon; 5. The plasma processing apparatus according to claim 4, wherein the change unit changes the process conditions based on the distribution information and interdependency data between a ratio of an emission intensity caused by fluorine to an emission intensity caused by argon, which is previously acquired, and an etching rate of the substrate.

6. The plasma generating unit includes: A first coil for generating plasma in a central portion of the chamber; a second coil for generating plasma on an outer periphery of the chamber; a power supply unit that supplies high-frequency power to each of the first coil and the second coil; the process conditions include a first set value related to power supplied from the power supply unit to each of the first coil and the second coil; The plasma processing apparatus according to claim 1 , wherein the change unit changes the first set value in an Mth unit process (M) based on the distribution information.

7. The power supply unit includes: One high frequency power source, a matching box connected to an output end of the high frequency power supply; a distributor connected to the matching box on the opposite side to the high frequency power supply and distributing a total power supplied from the high frequency power supply to the first coil and the second coil at a predetermined distribution ratio; Equipped with The control unit is configured to be able to control the distribution ratio of the distributor, The first set value includes the distribution ratio, The plasma processing apparatus according to claim 6 , wherein the change unit changes the distribution ratio in an Mth unit process (M) based on the distribution information.

8. The plasma processing apparatus according to claim 7 , wherein the change unit changes the distribution ratio in the Mth unit process (M) based on the distribution information without changing the total power.

9. The gas supply unit includes: a first supply unit that supplies the source gas to a central side of the chamber; a second supply unit that supplies the source gas to an outer periphery of the chamber; Equipped with the process conditions include second set values ​​for the source gas supplied to the chamber from each of the first supply unit and the second supply unit; The plasma processing apparatus according to claim 1 , wherein the change unit changes the second set value in an Mth unit process (M) based on the distribution information.

10. A plasma processing method for repeating unit processing of a substrate by using plasma generated by applying high frequency power to a raw material gas supplied from a gas supply unit, comprising: a measuring step of measuring and outputting distribution information regarding the distribution of plasma in the Nth (N is an integer) unit process (N); a changing step of changing the process conditions in the M-th unit process (M) (M is an arbitrary integer equal to or greater than (N+1)) when the distribution information measured in the measuring step satisfies a predetermined condition; The plasma processing method comprises:

11. The unit process includes: a deposition step of depositing a protective film on a surface of the substrate; a protective film removing step of removing a portion of the protective film to expose a portion of the substrate; a substrate etching step of etching the exposed portion of the substrate; having 11. The plasma processing method according to claim 10, wherein the changing step is a step of changing conditions of at least the substrate etching step in the unit process (M) based on the distribution information (N).

12. The plasma processing method according to claim 11 , wherein the changing step further changes a condition of the protective film removing step in the unit process (M).

13. The measuring step includes: a first measuring step of measuring light emission from a central portion of the plasma generated in the chamber with a first sensor; a second measuring step of measuring light emission on an outer periphery side of the plasma generated in the chamber with a second sensor; outputting the distribution information based on a first emission intensity measured by the first sensor and a second emission intensity measured by the second sensor; The plasma processing method of claim 10 , comprising:

14. the source gas comprises a fluorine source and argon; the measuring step includes outputting the first intensity ratio and the second intensity ratio as the distribution information; the first intensity ratio is a ratio between an emission intensity caused by fluorine generated from the fluorine source and an emission intensity caused by the argon, the emission intensity being measured by the first sensor; the second intensity ratio is a ratio between an emission intensity attributable to the fluorine measured by the second sensor and an emission intensity attributable to the argon; 14. The plasma processing method according to claim 13, wherein the changing step changes the process conditions based on the distribution information and interdependency data between a ratio of an emission intensity caused by fluorine and an emission intensity caused by argon, which has been previously acquired, and an etching rate of the substrate.

15. The plasma is A first coil for generating plasma in a central portion of the chamber; a second coil for generating plasma on an outer periphery of the chamber; a plasma generating unit including a power supply unit that supplies high-frequency power to each of the first coil and the second coil; the process conditions include a first set value related to power supplied from the power supply unit to each of the first coil and the second coil; The plasma processing method according to claim 10 , wherein the changing step changes the first set value in an Mth unit process (M) based on the distribution information.

16. The power supply unit includes: One high frequency power source, a matching box connected to an output end of the high frequency power supply; a distributor connected to the matching box on the opposite side to the high frequency power supply and distributing a total power supplied from the high frequency power supply to the first coil and the second coil at a predetermined distribution ratio; Equipped with The first set value includes the distribution ratio, 16. The plasma processing method according to claim 15, wherein the changing step changes the distribution ratio in an M-th unit process (M) based on the distribution information.

17. 17. The plasma processing method according to claim 16, wherein the changing step changes the distribution ratio in the Mth unit process (M) based on the distribution information without changing the total power.

18. The gas supply unit includes: a first supply unit that supplies the source gas to a central side of the chamber; a second supply unit that supplies the source gas to an outer periphery of the chamber; Equipped with the process conditions include second set values ​​for the source gas supplied to the chamber from each of the first supply unit and the second supply unit; The plasma processing method according to claim 10 , wherein the changing step changes the second set value in an Mth unit process (M) based on the distribution information.

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