Photodetection device and method for manufacturing the same

Abstract

To make a thinner photodetector having a collimating function.SOLUTION: A photodetector 1 includes two adjacent pixels PX, each of which includes a photodetector 200 including a lower electrode 210, an organic photodetector 220 stacked on the lower electrode 210, and an upper electrode 230 stacked on the organic photodetector 220, and a wall portion W extending from below an upper surface 230a of the upper electrode 230 included in the photodetector 200 to above the upper surface 230a of the upper electrode 230 included in the photodetector 200 between the two pixels PX.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a light detection device and a method for manufacturing the same. [Background technology]

[0002] In a light detection device, a collimator is sometimes provided that transmits the components of light reflected by a detected object such as a finger that travel in the normal direction toward the pixels and blocks the components that travel in oblique directions (see Patent Document 1 below). By using a collimator, crosstalk caused by light components traveling in oblique directions can be suppressed. As a result, blurring of the detected image can be suppressed, and detection accuracy can be improved. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2022-23667 Summary of the Invention [Problem to be solved by the invention]

[0004] The thickness of the collimator is required to be thick enough to block oblique light, so when the collimator is provided on the sensor layer, the thickness of the entire photodetector tends to increase.

[0005] One of the objects of the present disclosure is to reduce the thickness of a photodetector having a collimating function. [Means for solving the problem]

[0006] The photodetection device according to the present disclosure has two adjacent pixels, each of which includes a photodetector including a lower electrode, an organic photodetector stacked on the lower electrode, and an upper electrode stacked on the organic photodetector, and a wall portion extending between the two pixels from below an upper surface of the upper electrode included in the photodetector to above an upper surface of the upper electrode included in the photodetector. [Brief description of the drawings]

[0007] [Figure 1A] FIG. 2 is a plan view showing an example of a configuration of a light detection device. [Figure 1B] FIG. 2 is a block diagram showing an example of functions realized by the light detection device. [Diagram 2] 2 is a partial cross-sectional view showing a cross section taken along line II-II in FIG. 1 in the first embodiment. [Diagram 3] 3 is a partial cross-sectional view showing a schematic enlargement of a detection region of FIG. 2. [Figure 4] 4 is a partial cross-sectional view showing an enlarged schematic view of the periphery of a wall portion in FIG. 3. [Diagram 5] FIG. 1B is an enlarged plan view of an area A enclosed by a dashed line in FIG. 1A. [Figure 6A] 5A to 5C are schematic cross-sectional views of a manufacturing process of the light detection device. [Figure 6B] 5A to 5C are schematic cross-sectional views of a manufacturing process of the light detection device. [Figure 6C] 5A to 5C are schematic cross-sectional views of a manufacturing process of the light detection device. [Figure 6D] 5A to 5C are schematic cross-sectional views of a manufacturing process of the light detection device. [Figure 6E] 5A to 5C are schematic cross-sectional views of a manufacturing process of the light detection device. [Figure 6F] 5A to 5C are schematic cross-sectional views of a manufacturing process of the light detection device. [Figure 7] 2 is an enlarged schematic partial cross-sectional view of a cross section taken along line II-II in FIG. 1 in a second embodiment. [Figure 8] 2 is an enlarged schematic partial cross-sectional view of a section taken along line II-II in FIG. 1 in a first modified example. [Figure 9] 2 is an enlarged schematic partial cross-sectional view of a cross section taken along line II-II of FIG. 1 in a second modified example. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] [1. First embodiment] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and the present invention should not be interpreted as being limited to the description of the embodiments exemplified below.

[0009] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the invention according to the present disclosure. In this specification and each drawing, elements having the same functions as those described in the previous drawings may be given the same reference numerals, and duplicated descriptions may be omitted.

[0010] Furthermore, in the embodiments, when specifying the positional relationship between a certain component and another component, "above" and "below" do not only mean being located directly above or directly below a certain component, but also include cases where there is another component between them, unless otherwise specified.

[0011] [1-1. Overview of photodetection device] Fig. 1A is a plan view showing an example of the configuration of a photodetection device 1. Fig. 1B is a block diagram showing an example of functions realized by the detection device 1.

[0012] 1A, the photodetector 1 includes a substrate 110, a sensor unit 10, a gate line driving circuit 20, a signal line selection circuit 21, a detection circuit 24, a control circuit 26, and a power supply circuit 28. The photodetector 1 has a front-illuminated structure.

[0013] A control board CS is electrically connected to the substrate 110 via a flexible printed circuit board FS. A detection circuit 24 is provided on the flexible printed circuit board FS. A control circuit 26 and a power supply circuit 28 are provided on the control board CS. The control circuit 26 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 26 supplies control signals to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21 to control the detection operation of the sensor unit 10. The power supply circuit 28 supplies a power supply voltage to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21.

[0014] The light detection device 1 has a detection area DA and a frame area PA. The detection area DA is an area where the sensor unit 10 is provided. The frame area PA is an area outside the detection area DA, and is an area where the sensor unit 10 is not provided. In other words, the frame area PA is an area between an end of the detection area DA and an end of the substrate 110. The frame area PA includes a bending area BA and a terminal area TA. The bending area BA and the terminal area TA are provided at one end of the frame area PA. Wiring connected to the detection area DA is arranged in the bending area BA and the terminal area TA. In the terminal area TA, the substrate 110 and the flexible printed circuit board FS are connected to each other.

[0015] The sensor unit 10 includes a plurality of pixels PX, and receives light L from a detection object (see FIG. 3, etc.). The plurality of pixels PX are arranged in a matrix in the detection area DA. Each of the plurality of pixels PX includes a light receiving element 200, which will be described later, and outputs an electrical signal corresponding to the light irradiated thereon. Each pixel PX outputs an electrical signal corresponding to the light irradiated thereon as a detection signal Vdet to the signal line selection circuit 21. The light detection device 1 may be capable of detecting information related to a living body, such as, for example, a blood vessel image of a finger or palm, a pulse wave, a pulse, and blood oxygen saturation, based on the detection signal Vdet from each pixel PX. Each pixel PX performs detection according to a gate drive signal Vgcl supplied from a gate line drive circuit 20.

[0016] The gate line driving circuit 20 and the signal line selection circuit 21 are provided in the frame region PA. Specifically, as shown in Fig. 1A, the gate line driving circuit 20 is provided in a region of the frame region PA extending along the extension direction of the signal lines SGL. The signal line selection circuit 21 is provided in a region of the frame region PA extending along the extension direction of the gate lines GCL, and is provided between the sensor unit 10 and the bend region BA.

[0017] 1B, the photodetector 1 has a detection control unit 30 and a detection unit 40. A part or all of the functions of the detection control unit 30 are included in a control circuit 26. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 24 are included in the control circuit 26.

[0018] The detection control unit 30 is a circuit that supplies control signals to the gate line driving circuit 20, the signal line selection circuit 21, and the detection unit 40, respectively, and controls their operations. The detection control unit 30 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST, to the gate line driving circuit 20. The detection control unit 30 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 21. The gate line driving circuit 20 is a circuit that drives the gate lines GCL based on the various control signals. The gate line driving circuit 20 sequentially or simultaneously selects a plurality of gate lines GCL, and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 20 selects the pixels PX connected to the gate lines GCL. The signal line selection circuit 21 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL. The signal line selection circuit 21 is, for example, a multiplexer. The signal line selection circuit 21 connects the selected signal line SGL to the detection circuit 24 based on the selection signal ASW supplied from the detection control unit 30. As a result, the signal line selection circuit 21 outputs the detection signal Vdet of the pixel PX to the detection unit 40.

[0019] The detection unit 40 includes a detection circuit 24, a signal processing unit 44, a storage unit 45, a coordinate extraction unit 46, and a detection timing control unit 47. Based on a control signal supplied from the detection control unit 30, the detection timing control unit 47 controls the detection circuit 24, the signal processing unit 44, and the coordinate extraction unit 46 to operate in synchronization with each other.

[0020] The detection circuit 24 is, for example, an analog front-end circuit (AFE). The detection circuit 24 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal. The signal processor 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 24. When a detection target such as a finger or palm comes into contact with or close to the detection surface, the signal processor 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 24. In addition, the signal processor 44 can detect information about a living body such as a blood vessel image, pulse wave, pulse, and blood oxygen saturation of the finger or palm based on the signal from the detection circuit 24. The memory unit 45 temporarily stores the signal calculated by the signal processor 44. The memory unit 45 may be, for example, a RAM (Random Access Memory), a register circuit, or the like. The coordinate extraction unit 46 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger, palm, etc. when the contact or proximity of the finger, palm, etc. is detected by the signal processing unit 44. The coordinate extraction unit 46 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger, palm, etc. The coordinate extraction unit 46 combines the detection signals Vdet output from each pixel PX of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger, palm, etc. Note that the coordinate extraction unit 46 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0021] [1-2. Detailed structure of the photodetector] Hereinafter, the cross-sectional structure of the photodetector 1 will be described in order from the bottom up with reference to Figs. 2 and 3. Fig. 2 is a partial cross-sectional view showing a cut surface along line II-II in Fig. 1 in the first embodiment. Fig. 3 is a partial cross-sectional view showing an enlarged schematic view of the detection region DA in Fig. 2. Fig. 4 is a partial cross-sectional view showing an enlarged schematic view of the periphery of the wall portion W in Fig. 3. Fig. 5 is an enlarged plan view of the region A surrounded by a dashed line in Fig. 1A. Fig. 2 shows a portion near the edge of the detection region DA and a part of the frame region PA. In addition, to make the cross-sectional structure easier to see, hatching of some layers has been omitted (the same applies to Figs. 3-4 and Figs. 6-9 described later).

[0022] The light detection device 1 includes a circuit layer 100, a light receiving element 200, a sealing portion 300, and a collimator 400.

[0023] [1-2-1.Circuit layer] The circuit layer 100 includes a substrate 110 , a barrier inorganic layer 120 , an additional film 125 , a thin film transistor TFT, a gate insulating layer 140 , an interlayer insulating layer 150 , a planarizing layer 160 , and an insulating layer 170 .

[0024] The substrate 110 may have a two-layer structure, for example, a glass substrate and a resin substrate laminated thereon. The resin substrate may be made of, for example, polyimide. However, the present invention is not limited to this, and the substrate 110 may not have a glass substrate and may be made of only a flexible resin substrate.

[0025] A barrier inorganic layer 120 is laminated on the substrate 110. The barrier inorganic layer 120 may have a laminated structure made up of multiple layers. An additional film 125 may be formed in accordance with the location where the thin film transistor TFT described later is to be formed.

[0026] The thin film transistor TFT includes a semiconductor layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134. A gate insulating layer 140 is provided between the semiconductor layer 131 and the gate electrode 132. A silicon oxide layer is preferably used as the gate insulating layer 140. An interlayer insulating layer 150 is laminated on the gate electrode 132. The interlayer insulating layer 150 is preferably structured such that a silicon nitride layer and a silicon oxide layer are laminated.

[0027] A planarization layer 160 is provided so as to cover the interlayer insulating layer 150. The planarization layer 160 may be made of a resin such as photosensitive acrylic having an excellent surface planarity. The planarization layer 160 may be removed in a portion that electrically connects the light receiving element 200 and the circuit layer 100. An end of the planarization layer 160 may be located in the frame region PA. The planarization layer 160 may be partially removed in the frame region PA.

[0028] An insulating layer 170 is laminated on the planarizing layer 160. Furthermore, an inorganic insulating layer 180 made of an inorganic material is laminated on the insulating layer 170. The inorganic insulating layer 180 is also laminated on the lower electrodes 210 so as to expose each lower electrode 210. Furthermore, it is preferable that the inorganic insulating layer 180 is laminated on the planarizing layer 160 in the frame region PA.

[0029] [1-2-2. Photodetector] Each of the pixels PX includes a light receiving element 200 including a lower electrode 210 stacked on the insulating layer 170, an organic light receiving section 220 stacked on the lower electrode 210, and an upper electrode 230 stacked on the organic light receiving section 220. The lower electrode 210 and the organic light receiving section 220 are provided in common to the pixels PX. On the other hand, the upper electrode 230 is provided in common to the pixels PX. The organic light receiving section 220 is a layer that functions as a photoelectric conversion layer. The lower electrode 210 is electrically connected to the drain electrode 134 of the circuit layer 100. The upper electrode 230 is an electrode having translucency. Here, the lower electrode 210 has a portion 210P that constitutes the pixel PX and a portion 210W that constitutes a wall section W described later. The organic light receiving section 220 has a portion 220P that constitutes the pixel PX and a portion 220W that constitutes a wall section W described later. The upper electrode 230 has a portion 230P that constitutes the pixel PX and a portion 230W that constitutes a wall portion W described later (see FIG. 4). Moreover, the upper surface 230a of the upper electrode 230 has an upper surface 230Pa of the portion 230P and an upper surface 230Wa of the portion 230W.

[0030] [1-2-3. Sealing part] Each of the pixels PX includes a sealing portion 300 including a first inorganic sealing film 310 laminated on the upper electrode 230, a resin film 320 laminated on the first inorganic sealing film 310, and a second inorganic sealing film 330 laminated on the resin film 320. The first inorganic sealing film 310 is provided in common to the pixels PX. On the other hand, the resin film 320 and the second inorganic sealing film 330 are provided for each pixel PX. That is, the resin film 320 and the second inorganic sealing film 330 are laminated on the first inorganic sealing film 310 above each organic light receiving unit 220. The first inorganic sealing film 310 has a portion 310P that constitutes the pixel PX and a portion 310W that constitutes a wall portion W described later.

[0031] Since the sealing portion 300 is provided on the light receiving side, it is preferable that the sealing portion 300 is formed of a material that does not absorb light having a wavelength to be detected. In the first embodiment, the first inorganic sealing film 310, the resin film 320, and the second inorganic sealing film 330 are all light-transmitting.

[0032] [1-2-4. Collimator] The collimator 400 includes a core 412, a moisture-proof film 414, a light-shielding film 416, a first transparent resin layer 420, a light-shielding layer 430, a second transparent resin layer 440, a base layer 450, and a lens 460. The core 412, the moisture-proof film 414, and the light-shielding film 416 configure a wall W.

[0033] The wall portion W extends from below the upper surface 230Pa of the upper electrode 230 included in the light receiving element 200 to above the upper surface 230Pa of the upper electrode 230 included in the light receiving element 200 between two adjacent pixels PX (see FIG. 4). In the first embodiment, a part 230W of the upper electrode 230 constitutes the wall portion W, so that the wall portion W extends from below the upper surface 230Pa of the part 230P of the upper electrode 230 that constitutes the pixel PX to above the upper surface 230Pa of the part 230P of the upper electrode 230 that constitutes the pixel PX between two adjacent light receiving elements 200 (see FIG. 4). More specifically, the wall portion W extends from below the upper surface 230Pa of the part 230P of the upper electrode 230 to above the upper surface 330a of the second inorganic sealing film 330. In addition, the wall portion W is provided so as to surround each pixel PX in a plan view (see FIG. 5).

[0034] The wall W is made of resin and includes a core 412 extending from below the upper surface 230Pa of the upper electrode 230 included in the light receiving element 200 to above the upper surface 230Pa of the upper electrode 230 included in the light receiving element 200. Specifically, the core 412 extends from below the upper surface 230Pa of the portion 230P of the upper electrode 230 that constitutes the pixel PX to above the upper surface 230Pa of the portion 230P of the upper electrode 230 that constitutes the pixel PX (see FIG. 4). More specifically, the core 412 extends from below the upper surface 230Pa of the portion 230P of the upper electrode 230 to above the upper surface 330a of the second inorganic sealing film 330. The core 412 is laminated on the inorganic insulating layer 180 provided between two adjacent lower electrodes 210. In the first embodiment, the core 412 is made of a resin having light transmitting properties. The core portion 412 may be made of, for example, a resin such as photosensitive acrylic, similar to the planarizing layer 160 .

[0035] More specifically, the core 412 has a top 412a located above the top surface 330a of the second inorganic sealing film 330, a bottom 412b located below the top surface 230Pa of the upper electrode 230 included in the light receiving element 200, and two side portions 412c connecting the top 412a and the bottom 412b (see FIG. 4). That is, the core 412 has a quadrangular shape in cross section. Although FIGS. 2 and 3 show an example in which the shape of the core 412 in cross section is tapered, the shape of the core 412 in cross section may be an inverse tapered shape or a rectangular shape.

[0036] The wall W includes a moisture-proof film 414 interposed between the core 412 and the organic light receiving unit 220 included in each pixel PX. The moisture-proof film 414 is laminated so as to cover at least the two side portions 412c of the core 412 (see FIG. 4). Specifically, the moisture-proof film 414 is laminated so as to cover the two side portions 412c and the top portion 412a of the core 412. The moisture-proof film 414 is made of a material having higher moisture resistance than the core 412. For example, silicon nitride or alumina may be used as the moisture-proof film 414. In this way, the moisture-proof film 414 is interposed between the core 412 and the organic light receiving unit 220, thereby making it possible to suppress the intrusion of moisture into the organic light receiving unit 220 through the core 412 made of a porous resin that easily transmits moisture.

[0037] The wall W includes a light-shielding film 416 that has a light-shielding property and covers a part of each side portion 412c and the top portion 412a of the core portion 412. The light-shielding film 416 has a property of absorbing light (see FIG. 4). In the first embodiment, the light-shielding film 416 is made of a metal such as chromium, but the light-shielding film 416 may be a film made of, for example, a black resin. The light-shielding film 416 may have a property of reflecting light. In the first embodiment, the light-shielding film 416 covers a part of each side portion 412c of the core portion 412 that extends above the upper surface 230Pa of the upper electrode 230 included in the light-receiving element 200. On the other hand, the light-shielding film 416 does not cover a part of each side portion 412c of the core portion 412 that extends below the upper surface 230Pa of the upper electrode 230 included in the light-receiving element 200. Furthermore, a portion of the light-shielding film 416 is laminated on the upper surface 310Wa of the portion 310W that constitutes the wall portion W of the first inorganic sealing film 310. In this manner, the light-shielding film 416 covers the wall portion W, thereby more suitably suppressing the intrusion of oblique light into each pixel PX.

[0038] The light-shielding film 416 may cover only the top portion 412a of the core portion 412. The light-shielding film 416 may cover only a portion of one of the two side portions 412c of the core portion 412.

[0039] A first transparent resin layer 420 is laminated on the sealing portion 300. The first transparent resin layer 420 is also laminated on a portion of the light-shielding film 416 that is located on the upper surface 330a of the second inorganic sealing film 330. In addition, a second transparent resin layer 440 is laminated on the first transparent resin layer 420. Like the planarizing layer 160, the first transparent resin layer 420 and the second transparent resin layer 440 may be made of a resin such as photosensitive acrylic that has excellent surface planarity.

[0040] The light-shielding layer 430 is laminated on the first transparent resin layer 420. The light-shielding layer 430 is provided above the wall portion W, and has one opening O in a region above the sealing portion 300. The opening O is provided to correspond to each pixel PX. The light-shielding layer 430 has a property of absorbing light. In the first embodiment, a case where the light-shielding layer 430 is made of a metal such as chromium, as with the light-shielding film 416, is described, but the light-shielding layer 430 may be a film made of, for example, a black resin. The light-shielding layer 430 may have a property of reflecting light.

[0041] 3 and 5, the light-shielding layer 430 is provided so as to surround each light-receiving element 200 in a plan view. The light-shielding layer 430 is provided so as to overlap the wall portion W in a plan view. As shown in Fig. 5, the opening O of the light-shielding layer 430 has a circular shape, but the shape of the opening O is not limited to this example and may be, for example, a rectangular shape.

[0042] An underlayer 450 is laminated on the second transparent resin layer 440. The underlayer 450 is preferably made of an organic material. By using an organic material for the underlayer 450, adhesion to the lens 460 described below is improved. Furthermore, by using an organic material for the underlayer 450, the workability of the lens 460 is improved. Furthermore, the underlayer 450 may be made of an inorganic material. By using an inorganic material for the underlayer 450, moisture resistance can be further improved.

[0043] A lens 460 is laminated on the base layer 450. The lens 460 is provided above the light-shielding layer 430 so as to overlap with the opening O in a planar view (see FIG. 3). In the first embodiment, the lens 460 is a convex lens. The lens 460 has a circular shape in a planar view. The diameter of the lens 460 is larger than the diameter of the opening O. A part of the light L reflected by a detection object such as a finger is collected by the lens 460, passes through the opening O, and enters the light receiving element 200 (see FIG. 3).

[0044] As shown in FIG. 2, in the frame region PA, a raised portion 165 is formed by the planarization layer 160 and the inorganic insulating layer 180 formed along the planarization layer 160. The raised portion 165 may be formed by removing a part of the planarization layer 160 formed in the frame region PA and providing the inorganic insulating layer 180 on the remaining part of the planarization layer 160. The raised portion 165 is formed to prevent the resin material constituting the light receiving element 200 and the sealing portion 300 from leaking outward from the frame region PA when forming these layers. In FIG. 2, an example is shown in which three raised portions 165 are formed side by side toward the outside, but the number of raised portions 165 is not limited to this. In addition, the raised portion 165 may not be provided. In other words, the planarization layer 160 may not be provided in the frame region PA.

[0045] 2, in the first embodiment, the first inorganic sealing film 310 and the second inorganic sealing film 330 are formed in the frame region PA so as to follow the shapes of the raised portions 165. In this manner, the inorganic layer is formed so as to follow the unevenness caused by the multiple raised portions 165, thereby further improving the moisture resistance.

[0046] 2 shows an example in which a cut line CL is formed in the frame region PA so as to surround the detection region DA. At the cut line CL, layers above the substrate 110 are removed. However, the configuration of the frame region PA is not limited to that shown in FIG.

[0047] [1-3. Manufacturing method of photodetector] An example of a method for manufacturing the photodetector 1 of the first embodiment will be described below with reference to Figures 6A to 6F. Figures 6A to 6F are schematic cross-sectional views of the photodetector 1 in the manufacturing process.

[0048] First, a plurality of lower electrodes 210 are formed on the circuit layer 100. Next, an inorganic insulating layer 180 is formed on the circuit layer 100 so as to expose a portion of each lower electrode 210. Then, a resin 412F is applied onto the plurality of lower electrodes 210 and the inorganic insulating layer 180 (FIG. 6A). After a protective film R1 is formed on the resin 412F, the resin 412F is etched to form a core portion 412 extending above the circuit layer 100. The protective film R1 is formed at a position on the resin 412F corresponding to the location where the core portion 412 is to be formed. The core portion 412 surrounds each lower electrode 210 in a plan view as shown in FIGS. 3 and 5. The protective film R1 may be, for example, a photoresist.

[0049] 6B, an inorganic film 414F is formed commonly on the core 412 and the plurality of lower electrodes 210. The inorganic film 414F may be formed by, for example, CVD. Then, after a protective film R2 is formed so as to cover the core 412, the inorganic film 414F is etched to form the moisture-proof film 414.

[0050] 6C, a plurality of organic light receiving sections 220 are formed on each lower electrode 210 surrounded by a core section 412 in a plan view so as not to exceed a top portion 412a of the core section 412. The organic light receiving sections 220 may be formed by applying an organic material by, for example, inkjet printing. Since the core section 412 masks the space between two adjacent lower electrodes 210, the organic light receiving section 220 is formed for each pixel PX.

[0051] 6D, an upper electrode 230 is formed commonly on the core 412 and the organic light receiving units 220. Furthermore, a first inorganic sealing film 310 is formed on the upper electrode 230, and a metal film 416F is formed on the first inorganic sealing film 310. Then, after a protective film R3 is formed so as to cover the core 412, the metal film 416F is etched to form a light shielding film 416. The upper electrode 230, the first inorganic sealing film 310, and the metal film 430F may each be formed by, for example, CVD or the like.

[0052] Next, as shown in FIG. 6E, a plurality of resin films 320 are formed so as to be laminated on the first inorganic sealing film 310 above each organic light receiving unit 220. Each resin film 320 is formed so as not to exceed the top 412a of the core 412. Each resin film 320 may be formed by applying a resin material by, for example, inkjet printing, as in the case of the organic light receiving unit 220. Then, an inorganic film 330F is formed commonly on the core 412 and the plurality of resin films 320. After forming a protective film R4 so as to be laminated on the inorganic film 330F above each resin film 320, the inorganic film 330F is etched to form the second inorganic sealing film 330. The inorganic film 330F may be formed by CVD or the like. In this way, by patterning the second inorganic sealing film 330 so as to be formed only on the pixel PX as shown in FIG. 3, it is possible to prevent the wall W from becoming thick overall. Furthermore, inorganic film 330F may be formed over the entire detection area DA so as to cover wall portion W, i.e., so as to be laminated on light-shielding film 416 on top portion 412a of core portion 412. This structure adopts the state before protective film R4 is provided in FIG. 6E.

[0053] Then, as shown in FIG. 6F, a first transparent resin layer 420 is formed on the second inorganic sealing film 330. The first transparent resin layer 420 may be formed by, for example, a slit coater. Furthermore, a metal film 430F is formed on the first transparent resin layer 420. After a protective film R5 is formed on the metal film 430F above the core portion 412, the metal film 430F is etched to form the light-shielding layer 430. The protective film R5 is formed to avoid the portion where the opening O of the light-shielding layer 430 is to be formed. Thereafter, a second transparent resin layer 440, a base layer 450, and a lens 460 are formed in this order.

[0054] [1-4. Summary of the first embodiment] As described above, in the first embodiment, the wall portion W extending from below the upper surface 230Pa of the upper electrode 230 included in the light receiving element 200 to above the upper surface 230Pa of the upper electrode 230 included in the light receiving element 200 is provided between two adjacent pixels PX, thereby suppressing the intrusion of oblique light into each pixel PX. Therefore, the layers (light shielding layer 430, lens 460, etc.) provided above the light receiving element 200 can be made thinner or eliminated, and thus the entire collimator 400 can be made thinner, so that the light detection device 1 itself can be made thinner.

[0055] [2. Second embodiment] A photodetector 1 according to a second embodiment will be described. Fig. 7 is a schematic enlarged partial cross-sectional view of a section taken along line II-II in Fig. 1 according to the second embodiment. In the following, a description of the same configuration as in the first embodiment will be omitted.

[0056] In the second embodiment, the core 412 of the wall W has a light-shielding property. In the second embodiment, the core 412 has a property of absorbing light. In the second embodiment, the core 412 is made of a black resin. However, the core 412 may be made of a metal such as chromium, similar to the light-shielding film 416 and the light-shielding layer 430 in the first embodiment. The core 412 may also have a property of reflecting light. In this way, the core 412 itself has a light-shielding property, so that the intrusion of oblique light into each pixel PX can be more suitably suppressed. In addition, when the core 412 can be formed to a sufficient height, it is not necessary to provide the light-shielding layer 430, the lens 460, etc. above the light receiving element 200, and thus the entire collimator 400 can be made thinner, and therefore the entire device can be made thinner.

[0057] If it is desired to prevent the layer below the core 412 (the lower electrode 210, etc.) from being contaminated by a light-shielding material, it is preferable to form the core 412 from a light-transmitting material as described in the first embodiment.

[0058] As shown in FIG. 7, in the second embodiment, an auxiliary wall Ws extending upward is provided above the wall W. The auxiliary wall Ws includes a core 412s. Specifically, the core 412s of the auxiliary wall Ws is laminated on the upper surface 310a of the first inorganic sealing film 310 above the top 412a of the core 412 of the wall W, and extends upward. Similarly to the wall W, the auxiliary wall Ws is provided so as to surround each light receiving element 200 in a planar view. That is, in a planar view, the auxiliary wall Ws has a row direction extension portion extending in the first direction Dx and a column direction extension portion extending in the second direction Dy, and the row direction extension portion and the column direction extension portion intersect so as to surround each light receiving element 200. In the example of FIG. 7, a part of the first inorganic sealing film 310 and a part of the third inorganic sealing film 340 also constitute the auxiliary wall Ws.

[0059] In the second embodiment, sufficient light-shielding performance is obtained by the wall portion W and the auxiliary wall portion Ws. Therefore, unlike the first embodiment, the collimator 400 does not include the light-shielding layer 430 and the second transparent resin layer 440.

[0060] According to the photodetector 1 of the second embodiment described above, the coverage of the layers stacked on the wall portion W is good. That is, the higher the wall portion W is formed, the better the light blocking performance is, but the coverage of the portion 230W of the upper electrode 230 stacked on the wall portion W becomes poor. In the second embodiment, instead of trying to obtain a sufficient height for light blocking by the wall portion W alone, a sufficient height for light blocking is obtained by combining the auxiliary wall portion Ws and the wall portion W. By adopting such a configuration, the above-mentioned problem of coverage is improved.

[0061] In the second embodiment, from the viewpoint of sealing performance, the third inorganic sealing film 340 is laminated on the first inorganic sealing film 310 and the auxiliary wall portion Ws, but the third inorganic sealing film 340 does not necessarily have to be provided.

[0062] [3. Modifications] The present disclosure is not limited to the above-described embodiment, and may be modified as appropriate without departing from the spirit and scope of the present disclosure.

[0063] [3-1. First modified example] Fig. 8 is an enlarged schematic partial cross-sectional view of the first modified example taken along line II-II in Fig. 1. In the following, description of the same configuration as in the first embodiment will be omitted.

[0064] 8, in the first modification, the light-shielding film 416 covers a portion of the core 412 above the upper surface 330a of the second inorganic sealing film 330. Here, the light-shielding film 416 is laminated on the upper surface 330a of the second inorganic sealing film 330. That is, in the first modification, the light-shielding film 416 is formed after the second inorganic sealing film 330, i.e., the sealing portion 300, is formed. This can improve the sealing performance of the sealing portion 300.

[0065] [3-2. Second modified example] Fig. 9 is an enlarged schematic partial cross-sectional view of the second modified example taken along line II-II in Fig. 1. In the following, description of the same configuration as in the first embodiment will be omitted.

[0066] As shown in FIG. 9, in the second modification, a portion 416P of the light-shielding film 416 laminated on the second inorganic sealing film 330 has a plurality of openings O1. In this modification, the second inorganic sealing film 330 has a portion 330P constituting the pixel PX and a portion 330W constituting the wall portion W. In addition, the upper surface 330a of the second inorganic sealing film 330 has an upper surface 330Pa of the portion 330P and an upper surface 330Wa of the portion 330W. The portion 416P of the light-shielding film 416 is laminated on the upper surface 330Pa of the second inorganic sealing film 330 and has a plurality of openings O1. In addition, the light-shielding layer 430 has a plurality of openings O2 above the sealing portion 300. Each opening O2 is provided to correspond to each opening O1. Furthermore, a lens 460 is provided above the light-shielding layer 430 so as to overlap each opening O2 in a plan view. According to the configuration of the second modification, the number of apertures per pixel PX increases, and therefore the resolution is further improved. The number of openings is not limited to the example shown in FIG. 8, and may be any number.

[0067] The present invention is not limited to the above-described embodiment, and various modifications are possible. For example, the above-described embodiment may be replaced with a configuration that is substantially the same as the configuration shown in the above-described embodiment, a configuration that provides the same effect, or a configuration that can achieve the same purpose.

[0068] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention. For example, those in which a person skilled in the art appropriately adds, deletes, or modifies the design of the above-mentioned embodiments, or adds, omits, or modifies the conditions of steps, are also included in the scope of the present invention as long as they include the gist of the present invention. [Explanation of symbols]

[0069] 1 Photodetector, 10 Sensor, 20 Gate line driving circuit, 21 Signal line selection circuit, 24 Detection circuit, 26 Control circuit, 28 Power supply circuit, 30 Detection control unit, 42 Detection signal amplifier, 43 A / D conversion unit, 44 Signal processing unit, 45 Memory unit, 46 Coordinate extraction unit, 47 Detection timing control unit, PX Pixel, 100 Circuit layer, 110 Substrate, 120 Barrier inorganic layer, 125 Additional film, 131 Semiconductor layer, 132 Gate electrode, 133 Source electrode, 134 Drain electrode, 140 Gate insulating layer, 150 Interlayer insulating layer, 160 Planarization layer, 165 Raised portion, 170 Insulating layer, 180 Inorganic insulating layer, 200 Light receiving element, 210 Lower electrode, 220 Organic light receiving unit, 230 Upper electrode, 300 Sealing unit, 310 First inorganic sealing film, 320 resin film, 330 second inorganic sealing film, 340 third inorganic sealing film, 400 collimator, W wall portion, 412 core portion, 414 moisture-proof film, 416 light-shielding film, Ws auxiliary wall portion, 412S core portion, 420 first transparent resin layer, 430 light-shielding layer, 440 second transparent resin layer, 450 undercoat layer, 460 lens.

Claims

1. Two adjacent pixels each including a light receiving element including a lower electrode, an organic light receiving portion laminated on the lower electrode, and an upper electrode laminated on the organic light receiving portion; a wall portion extending from below an upper surface of the upper electrode included in the light receiving element to above an upper surface of the upper electrode included in the light receiving element between the two pixels; A light detection device comprising:

2. In a plan view, the wall portion is provided so as to surround at least one of the pixels.

2. The optical detection device according to claim 1.

3. The wall portion is a core portion made of resin and extending from below an upper surface of the upper electrode included in the light receiving element to above an upper surface of the upper electrode included in the light receiving element; 3. A light detection device according to claim 1 or 2.

4. The wall portion is The organic light receiving portion includes a moisture-proof film interposed between the core portion and the organic light receiving portion included in at least one of the pixels.

4. The optical detection device according to claim 3.

5. The core portion is translucent, The wall portion is The light-shielding film has a light-shielding property and further includes a light-shielding film that covers at least the top of the wall portion.

4. The optical detection device according to claim 3.

6. The light-shielding film further covers at least a portion of at least one of the two side portions of the core portion.

6. The optical detection device according to claim 5.

7. Further, a sealing portion is laminated on at least one of the light receiving elements, the wall portion extends above an upper surface of the seal portion; The light-shielding layer is provided above the wall portion and has one or more openings in an area above the sealing portion.

6. The optical detection device according to claim 5.

8. The optical element further includes a lens provided above the light-shielding layer and overlapping with each of the openings in a plan view.

8. The optical detection device according to claim 7.

9. At least one of the pixels further includes a sealing portion laminated on the light receiving element included in the pixel, the core portion extends above a top surface of the encapsulation portion; The light-shielding film covers a portion of the core portion above an upper surface of the sealing portion.

6. The optical detection device according to claim 5.

10. the light-shielding film includes a portion laminated on the sealing portion, The portion has one or more openings.

10. The optical detection device according to claim 9.

11. The core portion has a light-shielding property.

4. The optical detection device according to claim 3.

12. Further comprising an auxiliary wall portion provided above the wall portion and extending upward. The optical detection device according to claim 11.

13. a lower electrode forming step of forming a plurality of lower electrodes on a substrate; a wall forming step of forming a wall surrounding each of the lower electrodes in a plan view and extending above the substrate; an organic light receiving portion forming step of forming a plurality of organic light receiving portions on each of the lower electrodes surrounded by the wall portion in a plan view so as not to extend beyond a top of the wall portion; an upper electrode forming step of forming an upper electrode commonly on the wall portion and the plurality of organic light receiving portions; A method for manufacturing a light detection device comprising the steps of:

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