Signal transmission device

Abstract

To provide a signal transmission device for ensuring a dielectric voltage while restraining an increase in thickness between electrodes.SOLUTION: A first lead-out wiring 61 of a signal transmission device 5 has a first connection portion 611, a first extension portion 612, and a second extension portion 613. The first connection portion 611 is connected to a first lower electrode 31. The first extension portion 612 is connected to the first connection portion 611. The second extension portion 613 is connected to the first extension portion 612 and an arithmetic circuit 10. Furthermore, the first extension portion 612 extends in a direction intersecting with a first shortest direction Dmin1. The first shortest direction Dmin1 is a shortest direction of a line segment connecting the first connection portion 611 and a shield portion 50 corresponding to the ground in a direction perpendicular to the thickness direction DT. Furthermore, a signal from the arithmetic circuit 10 is transmitted via the second extension portion 613, the first extension portion 612, the first connection portion 611, the first lower electrode 31, and the first upper electrode 41.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to signal transmission devices. [Background technology]

[0002] As described in Patent Document 1, a capacitor has been known that includes a first terminal as a first electrode, a second terminal as a second electrode, and a dielectric material layer disposed between the first terminal and the second terminal. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2022 / 0254740 Summary of the Invention [Problem to be solved by the invention]

[0004] In the capacitor described in Patent Document 1, the electric field strength between the first terminal and the second terminal may be reduced by increasing the thickness of the dielectric material layer between the first terminal and the second terminal. This ensures the dielectric strength of the capacitor as a signal transmission device. However, increasing the thickness of the dielectric material layer increases the number of manufacturing steps in the manufacture of the capacitor, such as the formation of a large number of vias and wiring layers. This increases the cost of the capacitor. Also, if the thickness of the dielectric material layer is small, the electric field strength between the first terminal and the second terminal increases, and the dielectric strength of the capacitor is not ensured.

[0005] An object of the present disclosure is to provide a signal transmission device that ensures a high dielectric strength while suppressing an increase in the thickness between electrodes. [Means for solving the problem]

[0006] The invention described in claim 1 is a signal transmission device comprising a semiconductor substrate (7), an insulating film (21) having electrical insulation and formed on the semiconductor substrate, a first electrode (31) covered with the insulating film, a second electrode (41) formed on the insulating film and facing the first electrode in a thickness direction (DT) of the semiconductor substrate and to which a voltage higher than that applied to the first electrode is applied, a ground (50) arranged between the first electrode and the second electrode and an electronic circuit (10) in a direction perpendicular to the thickness direction and having a reference potential, and a ground (50) having a reference potential and a reference potential. and an extraction portion (61) having a connection portion (611) connected to the electrode, a first extension portion (612) connected to the connection portion, and a second extension portion (613) connected to the first extension portion and to the electronic circuit, wherein the first extension portion extends in a direction intersecting the shortest direction (Dmin1) of a line segment connecting the connection portion and the ground in a direction perpendicular to the thickness direction, and the second extension portion extends in a direction intersecting the direction in which the first extension portion extends, and a signal from the electronic circuit is transmitted via the second extension portion, the first extension portion, the connection portion, the first electrode, and the second electrode.

[0007] The strength of the electric field from the second electrode is smaller in a direction not directed from the second electrode to the ground than in a direction from the second electrode to the ground. Furthermore, since the first extension portion extends in a direction intersecting the shortest direction, the extension portion extends in a direction not directed from the second electrode to the ground. Therefore, the electric field strength between the second electrode and the extension portion is smaller than when the first extension portion extends in the shortest direction. Furthermore, there is no need to thicken the insulating film between the first electrode and the second electrode. Therefore, the dielectric strength of the signal transmission device is ensured while suppressing an increase in the thickness between the electrodes.

[0008] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and specific components described in the embodiments described below. [Brief description of the drawings]

[0009] [Figure 1]FIG. 2 is a top view layout diagram of the signal transmission device according to the first embodiment. [Diagram 2] Cross-sectional view of line II-II in Figure 1. [Diagram 3] FIG. 2 is a diagram showing a first bottom electrode and a first lead-out wiring of the signal transmission device. [Figure 4] FIG. 13 is a diagram showing a second bottom electrode and a second lead-out wiring of the signal transmission device. [Diagram 5] FIG. 13 is a diagram showing a potential distribution in a signal transmission device of a comparative example. [Figure 6] FIG. 13 is a diagram showing a potential distribution in a signal transmission device of a comparative example. [Figure 7] FIG. 13 is a diagram showing an electric field distribution in a signal transmission device of a comparative example. [Figure 8] FIG. 13 is a diagram showing an electric field distribution in a signal transmission device of a comparative example. [Figure 9] FIG. 4 is a diagram showing maximum electric field intensity in the first embodiment, the second embodiment, and a comparative example. [Figure 10] 13 is a cross-sectional view of a first lower electrode and a first lead-out wiring of a signal transmission device according to a second embodiment. [Figure 11] FIG. 13 is a diagram showing a second bottom electrode and a second lead-out wiring of the signal transmission device. [Figure 12] FIG. 11 is a top view of a layout of a signal transmission device according to a third embodiment. [Figure 13] FIG. 2 is a diagram showing a first bottom electrode and a third lead-out wiring of a signal transmission device. [Figure 14] FIG. 13 is a diagram showing a second bottom electrode and a fourth lead-out wiring of the signal transmission device. [Figure 15] FIG. 13 is a top view layout diagram of a signal transmission device according to a fourth embodiment. [Figure 16] FIG. 13 is a top view layout diagram of a signal transmission device according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, embodiments will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals, and the description thereof will be omitted.

[0011] (First embodiment) In the signal transmission device of this embodiment, an increase in the thickness between the electrodes is suppressed, and the dielectric strength of the signal transmission device is ensured.

[0012] 1 and 2, the signal transmission device 5 includes a semiconductor substrate 7, an arithmetic circuit 10, a first insulating film 21, a first lower electrode 31, a first upper electrode 41, a shield part 50, and a first outgoing wiring 61. The signal transmission device 5 further includes a second lower electrode 32, a second upper electrode 42, a second outgoing wiring 62, a second insulating film 22, and a third insulating film 23.

[0013] The semiconductor substrate 7 is made of, for example, silicon etc. Hereinafter, the thickness direction DT of the semiconductor substrate 7 will be simply referred to as the thickness direction DT.

[0014] The arithmetic circuit 10 is, for example, a microcomputer or the like arranged on a semiconductor substrate 7, and is an electronic circuit that executes arithmetic operations and logical operations.

[0015] 2, the first insulating film 21 has electrical insulation properties and is formed on the semiconductor substrate 7. The first insulating film 21 has a first film 211, a second film 212, a third film 213, a fourth film 214, a fifth film 215, a sixth film 216, and a seventh film 217. Here, the first insulating film 21 has a seven-layer structure. In contrast, the number of layers of the first insulating film 21 is not limited to seven and is arbitrary.

[0016] The first film 211 is formed on the semiconductor substrate 7. The second film 212 is formed on the first film 211. The third film 213 is formed on the second film 212. The fourth film 214 is formed on the third film 213. The fifth film 215 is formed on the fourth film 214. The sixth film 216 is formed on the fifth film 215. The seventh film 217 is formed on the sixth film 216. Furthermore, the fifth film 215 is connected to the opposite side of the sixth film 216 to the seventh film 217 in the thickness direction DT, and is connected to the first lower electrode 31 and the second lower electrode 32 described later in the thickness direction DT via the second film 212, the third film 213, and the fourth film 214. Moreover, the sixth film 216 is connected to the opposite side of the seventh film 217 to the first upper electrode 41 and the second upper electrode 42 described later in the thickness direction DT. Furthermore, the seventh film 217 is connected to a first upper electrode 41 and a second upper electrode 42, which will be described later, in the thickness direction DT.

[0017] Moreover, the first film 211, the second film 212, the third film 213, the fourth film 214, the fifth film 215, and the seventh film 217 are formed of silicon dioxide or the like, and are therefore oxide films. Furthermore, the sixth film 216 is formed of silicon nitride or the like, and is therefore a nitride film.

[0018] The first lower electrode 31 is formed on the first film 211 and is thereby covered with the first insulating film 21. The first lower electrode 31 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and is therefore conductive. The length of the first lower electrode 31 in the thickness direction DT, i.e., the thickness of the first lower electrode 31, is, for example, 0.1 to 1.0 μm.

[0019] In addition, the cross section of first lower electrode 31 cut in a direction perpendicular to thickness direction DT is formed in an elliptical shape here. Therefore, first lower electrode 31 has lower-side first curved portion 311, lower-side second curved portion 312, and lower-side first straight portion 313, as shown in FIG.

[0020] The lower first curved portion 311 is curved convexly on the arithmetic circuit 10 side in a direction perpendicular to the thickness direction DT. As a result, the center of curvature of the lower first curved portion 311 is located inside the first lower electrode 31. Furthermore, since the first lower electrode 31 has an elliptical shape, the lower first curved portion 311 is formed in an arc shape. The lower first radius Rb1 is, for example, 20 μm or more. The lower first radius Rb1 is the radius of the lower first curved portion 311.

[0021] The lower second curved portion 312 is formed to be curved convexly on the opposite side to the arithmetic circuit 10 in the direction perpendicular to the thickness direction DT. Therefore, the center of curvature of the lower second curved portion 312 is located inside the first lower electrode 31. Furthermore, since the shape of the first lower electrode 31 is an ellipse, the lower second curved portion 312 is formed in an arc shape. Moreover, the lower second radius Rb2 is, for example, 20 μm or more. The lower second radius Rb2 is the radius of the lower second curved portion 312.

[0022] The lower first straight portion 313 is connected to the lower first curved portion 311 and the lower second curved portion 312. Furthermore, the lower first straight portion 313 extends in one direction perpendicular to the thickness direction DT. The lower first radius Rb1 and the lower second radius Rb2 are set to be half or less of the lower first width Wb1, that is, Rb1≦Wb1 / 2 and Rb2≦Wb1 / 2. The lower first width Wb1 is the length of the lower first straight portion 313 in a direction perpendicular to the thickness direction DT and the direction in which the lower first straight portion 313 extends.

[0023] 2, the first upper electrode 41 is formed on the seventh film 217, and thus on the first insulating film 21. The first upper electrode 41 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and thus has electrical conductivity. Furthermore, the length of the first upper electrode 41 in the thickness direction DT, i.e., the thickness of the first upper electrode 41, is, for example, 1.0 to 10.0 μm.

[0024] Moreover, a cross section of the first upper electrode 41 cut in a direction perpendicular to the thickness direction DT corresponds to the shape of the first lower electrode 31, and is formed in an elliptical shape here. Therefore, the first upper electrode 41 has an upper-side first curved portion 411, an upper-side second curved portion 412, and an upper-side first straight portion 413, as shown in FIG.

[0025] The upper first curved portion 411 is curved convexly on the arithmetic circuit 10 side in a direction perpendicular to the thickness direction DT. As a result, the center of curvature of the upper first curved portion 411 is located inside the first upper electrode 41. Furthermore, since the first upper electrode 41 has an elliptical shape, the upper first curved portion 411 is formed in an arc shape. The upper first radius Ru1 is, for example, 20 μm or more. The upper first radius Ru1 is the radius of the upper first curved portion 411.

[0026] The upper-side second curved portion 412 is curved convexly on the opposite side to the arithmetic circuit 10 in the direction perpendicular to the thickness direction DT. Therefore, the center of curvature of the upper-side second curved portion 412 is located inside the first upper electrode 41. Furthermore, since the first upper electrode 41 has an elliptical shape, the upper-side second curved portion 412 is formed in an arc shape. The upper-side second radius Ru2 is, for example, 20 μm or more. The upper-side second radius Ru2 is the radius of the upper-side second curved portion 412.

[0027] The upper-side first straight portion 413 is connected to the upper-side first curved portion 411 and the upper-side second curved portion 412. Furthermore, the upper-side first straight portion 413 extends in the same direction as the lower-side first straight portion 313 extends. Furthermore, the upper-side first radius Ru1 and the upper-side second radius Ru2 are set to be half or less of the upper-side first width Wu1, that is, Ru1≦Wu1 / 2, Ru2≦Wu1 / 2. Note that the upper-side first width Wu1 is the length of the upper-side first straight portion 413 in the direction perpendicular to the thickness direction DT and the direction in which the upper-side first straight portion 413 extends.

[0028] 2, the first upper electrode 41 faces the first lower electrode 31 in the thickness direction DT. Therefore, the first upper electrode 41 and the first lower electrode 31 form a capacitor. The first inter-electrode distance Lud1 is set to be 5.0 μm or more and 8.0 μm or less. The first inter-electrode distance Lud1 is the distance from the first upper electrode 41 to the first lower electrode 31 in the thickness direction DT.

[0029] Here, as shown in FIG. 1 and FIG. 2, the area of ​​the surface of the first lower electrode 31 perpendicular to the thickness direction DT is defined as the first lower area Sb1. Furthermore, the area of ​​the surface of the first upper electrode 41 perpendicular to the thickness direction DT is defined as the first upper area Su1. Furthermore, the end located on the outer edge of the surface of the first lower electrode 31 facing the first upper electrode 41 in the thickness direction DT is defined as the lower first electrode end 315. Furthermore, the end of the first upper electrode 41 located outside the first upper electrode 41 in the direction perpendicular to the thickness direction DT and in contact with the seventh film 217 is defined as the upper first electrode end 415. Furthermore, the minimum distance from the lower first electrode end 315 to the upper first electrode end 415 in the direction perpendicular to the thickness direction DT is defined as the first end distance Lub1.

[0030] The first upper area Su1 is larger than the first lower area Sb1, i.e., Su1>Sb1. Furthermore, the lower-side first electrode end 315 is located on the inner side of the first upper electrode 41 than the upper-side first electrode end 415 in the direction perpendicular to the thickness direction DT. The first end distance Lub1 is set to be 10 μm or more and 50 μm or less.

[0031] Furthermore, the first upper electrode 41 has a first slit 417 and a first slit end 419 .

[0032] The first slit 417 is a hole penetrating the first upper electrode 41 in the thickness direction DT. The cross section of the first slit 417 cut in a direction perpendicular to the thickness direction DT corresponds to the shape of the first upper electrode 41, and is formed in an elliptical shape here. In FIG. 1, the first slit 417 is shown in a dot pattern to clarify the location of the first slit 417.

[0033] 2, the first slit end 419 is an outer edge of a surface facing the outside of the first upper electrode 41 in a direction perpendicular to the thickness direction DT among the side surfaces forming the first slit 417 in the first upper electrode 41, and is in contact with the seventh film 217. Furthermore, the first slit end 419 is located outside the first lower electrode 31 more than the lower first electrode end 315 in a direction perpendicular to the thickness direction DT. In addition, the first slit distance Lsb1 is set to be 1.0 μm or more and 50 μm or less. Note that the first slit distance Lsb1 is the minimum distance from the first slit end 419 to the lower first electrode end 315 in a direction perpendicular to the thickness direction DT.

[0034] Further, here, the distance from the surface of the sixth film 216 on the first lower electrode 31 side in the thickness direction DT to the first lower electrode 31 is defined as a first lower distance Lb1. Also, the distance from the surface of the sixth film 216 on the first upper electrode 41 side in the thickness direction DT to the first upper electrode 41 is defined as a first upper distance Lu1.

[0035] The upper first distance Lu1 is smaller than the lower first distance Lb1. <Lb1とされている。

[0036] 1, a part of the shield section 50 is disposed between the first lower electrode 31 and the first upper electrode 41 and the arithmetic circuit 10 in a direction perpendicular to the thickness direction DT. The potential of the shield section 50 is set to a reference potential. As shown in FIG. 2, the shield section 50 further includes a first via 501, a first conductor 511, a second via 502, a second conductor 512, a third via 503, a third conductor 513, a fourth via 504, and a fourth conductor 514.

[0037] The first via 501 is formed by filling a via hole formed in the first film 211 with a metal such as tungsten by using CVD or the like. Note that CVD is an abbreviation for Chemical Vapor Deposition.

[0038] The first conductor 511 is connected to the first via 501 in the thickness direction DT. The first conductor 511 is formed together with the first lower electrode 31, and is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum. The first conductor 511 is covered with the second film 212.

[0039] The second via 502 is formed by filling a via hole formed in the second film 212 with a metal such as tungsten by using CVD or the like. The second via 502 is connected to the first conductor 511 in the thickness direction DT.

[0040] The second conductor 512 is connected to the second via 502 in the thickness direction DT. The second conductor 512 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum. The second conductor 512 is covered with the third film 213.

[0041] The third via 503 is formed by filling a via hole formed in the third film 213 with a metal such as tungsten by using CVD or the like. Furthermore, the third via 503 is connected to the second conductor 512 in the thickness direction DT.

[0042] The third conductor 513 is connected to the third via 503 in the thickness direction DT. The third conductor 513 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum. The third conductor 513 is covered with the fourth film 214.

[0043] The fourth via 504 is formed by filling a via hole formed in the fourth film 214 with a metal such as tungsten by using CVD or the like. The fourth via 504 is connected to the third conductor 513 in the thickness direction DT.

[0044] The fourth conductor 514 is connected to the fourth via 504 in the thickness direction DT. Furthermore, the third conductor 513 is formed of a metal such as aluminum, tungsten, copper, titanium, or tantalum. Furthermore, the fourth conductor 514 is covered with the fifth film 215. Furthermore, as shown in FIG. 1, the fourth conductor 514 is formed in a rectangular ring shape, and thus surrounds the first lower electrode 31 and the first upper electrode 41 in a direction perpendicular to the thickness direction DT. Note that, although the shape of the fourth conductor 514 is a rectangular ring shape here, it is not limited thereto, and may be a polygonal ring shape, a circular ring shape, an oval ring shape, or the like.

[0045] The first extension wiring 61 is formed together with the first lower electrode 31. Furthermore, the first extension wiring 61 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and thus has electrical conductivity. The first extension wiring 61 also has a first connection portion 611, a first extension portion 612, and a second extension portion 613.

[0046] The first connection portion 611 is connected to the first lower electrode 31, and here, is connected to the lower-side first curved portion 311. Note that the first connection portion 611 is not limited to being connected to the lower-side first curved portion 311, and may be connected to the lower-side second curved portion 312 and the lower-side first straight portion 313.

[0047] 3, the outer edge of the cross section of the first connecting portion 611 when cut in a direction perpendicular to the thickness direction DT is formed into a concavely curved shape. Therefore, the center of curvature of the first connecting portion 611 is located outside the first connecting portion 611. The radius of curvature of the first connecting portion 611 is set to, for example, 10 μm. Furthermore, the first length L1 becomes shorter from the first connecting portion 611 toward the first extending portion 612 described below. The first length L1 is the length of the first connecting portion 611 in a direction perpendicular to the thickness direction DT and the direction in which the first extending portion 612 extends.

[0048] The first extension portion 612 is connected to the side of the first connection portion 611 opposite to the first lower electrode 31. The first extension portion 612 extends in a direction intersecting with the first shortest direction Dmin1. The first shortest direction Dmin1 is the shortest direction of a line segment connecting the first connection portion 611 and the shield portion 50 in a direction perpendicular to the thickness direction DT. Furthermore, although the first extension portion 612 extends linearly here, it is not limited to this and may extend in a curved manner.

[0049] Here, a first angle θ1 is defined as an angle formed by a line extending in the first shortest direction Dmin1 and a line extending in the direction in which the first extension portion 612 extends. The first angle θ1 is set to be equal to or greater than 45° and less than 90°.

[0050] 1, the second extension portion 613 is connected to the side of the first extension portion 612 opposite to the first connection portion 611. Furthermore, the second extension portion 613 extends in a direction intersecting the direction in which the first extension portion 612 extends, for example, in the first shortest direction Dmin1. As a result, the second extension portion 613 is connected to the arithmetic circuit 10. Note that, although the second extension portion 613 extends linearly here, it is not limited thereto and may extend in a curved line.

[0051] 2, the second lower electrode 32 is formed on the first film 211 and is thereby covered with the first insulating film 21. In addition, the second lower electrode 32 is formed of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and is therefore conductive. Furthermore, the length of the second lower electrode 32 in the thickness direction DT, that is, the thickness of the second lower electrode 32, is set to, for example, 0.1 to 1.0 μm.

[0052] In addition, the cross section of second lower electrode 32 cut in a direction perpendicular to thickness direction DT is formed in an elliptical shape here. Therefore, second lower electrode 32 has lower-side third curved portion 321, lower-side fourth curved portion 322, and lower-side second straight portion 323, as shown in FIG.

[0053] The lower-side third curved portion 321 is curved convexly on the arithmetic circuit 10 side in a direction perpendicular to the thickness direction DT. As a result, the center of curvature of the lower-side third curved portion 321 is located inside the second lower electrode 32. Furthermore, since the second lower electrode 32 has an elliptical shape, the lower-side third curved portion 321 is formed in an arc shape. The lower-side third radius Rb3 is, for example, 20 μm or more. The lower-side third radius Rb3 is the radius of the lower-side third curved portion 321.

[0054] The lower-side fourth curved portion 322 is curved convexly on the side opposite to the arithmetic circuit 10 in the direction perpendicular to the thickness direction DT. Therefore, the center of curvature of the lower-side fourth curved portion 322 is located inside the second lower electrode 32. Furthermore, since the second lower electrode 32 has an elliptical shape, the lower-side fourth curved portion 322 is formed in an arc shape. The lower-side fourth radius Rb4 is, for example, 20 μm or more. The lower-side fourth radius Rb4 is the radius of the lower-side fourth curved portion 322.

[0055] The lower-side second straight portion 323 is connected to the lower-side third curved portion 321 and the lower-side fourth curved portion 322. Furthermore, the lower-side second straight portion 323 extends in the same direction as the lower-side first straight portion 313 extends. In addition, the lower-side third radius Rb3 and the lower-side fourth radius Rb4 are set to be half or less of the lower-side second width Wb2, that is, Rb3≦Wb2 / 2 and Rb4≦Wb2 / 2. The lower-side second width Wb2 is the length of the lower-side second straight portion 323 in the direction perpendicular to the thickness direction DT and the direction in which the lower-side second straight portion 323 extends.

[0056] Furthermore, the second lower electrode 32 is aligned with the first lower electrode 31 in a direction perpendicular to the thickness direction DT. The second lower electrode 32 is surrounded by the shield part 50 in a direction perpendicular to the thickness direction DT.

[0057] 2, the second upper electrode 42 is formed on the seventh film 217, and thereby formed on the first insulating film 21. The second upper electrode 42 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and thus has electrical conductivity. Furthermore, the length of the second upper electrode 42 in the thickness direction DT, i.e., the thickness of the second upper electrode 42, is, for example, 1.0 to 10.0 μm.

[0058] Moreover, the cross section of the second upper electrode 42 cut in a direction perpendicular to the thickness direction DT corresponds to the shape of the second lower electrode 32, and is formed in an elliptical shape here. Therefore, the second upper electrode 42 has an upper-side third curved portion 421, an upper-side fourth curved portion 422, and an upper-side second straight portion 423, as shown in FIG.

[0059] The upper-side third curved portion 421 is curved convexly on the arithmetic circuit 10 side in a direction perpendicular to the thickness direction DT. As a result, the center of curvature of the upper-side third curved portion 421 is located inside the second upper electrode 42. Furthermore, since the second upper electrode 42 has an elliptical shape, the upper-side third curved portion 421 is formed in an arc shape. The upper-side third radius Ru3 is, for example, 20 μm or more. The upper-side third radius Ru3 is the radius of the upper-side third curved portion 421.

[0060] The upper-side fourth curved portion 422 is curved convexly on the opposite side to the arithmetic circuit 10 in the direction perpendicular to the thickness direction DT. Therefore, the center of curvature of the upper-side fourth curved portion 422 is located inside the second upper electrode 42. Furthermore, since the second upper electrode 42 has an elliptical shape, the upper-side fourth curved portion 422 is formed in an arc shape. The upper-side fourth radius Ru4 is, for example, 20 μm or more. The upper-side fourth radius Ru4 is the radius of the upper-side fourth curved portion 422.

[0061] The upper-side second straight portion 423 is connected to the upper-side third curved portion 421 and the upper-side fourth curved portion 422. Furthermore, the upper-side second straight portion 423 extends in the direction in which the lower-side second straight portion 323 extends. In addition, the upper-side third radius Ru3 and the upper-side fourth radius Ru4 are set to be half or less of the upper-side second width Wu2, that is, Ru3≦Wu2 / 2, Ru4≦Wu2 / 2. Note that the upper-side second width Wu2 is the length of the upper-side second straight portion 423 in a direction perpendicular to the thickness direction DT and the direction in which the upper-side second straight portion 423 extends.

[0062] 2, the second upper electrode 42 faces the second lower electrode 32 in the thickness direction DT. Therefore, the second upper electrode 42 and the second lower electrode 32 form a capacitor. The second inter-electrode distance Lud2 is set to be 5.0 μm or more and 8.0 μm or less. The second inter-electrode distance Lud2 is the distance from the second upper electrode 42 to the second lower electrode 32 in the thickness direction DT.

[0063] Furthermore, the second upper electrode 42 is aligned with the first upper electrode 41 in a direction perpendicular to the thickness direction DT. As shown in Fig. 1, the second upper electrode 42 is surrounded by a shield section 50 in a direction perpendicular to the thickness direction DT. Furthermore, a part of the shield section 50 is disposed between the second lower electrode 32 and the second upper electrode 42 and the arithmetic circuit 10 in the direction perpendicular to the thickness direction DT.

[0064] Here, as shown in FIG. 1 and FIG. 2, the area of ​​the surface of the second lower electrode 32 perpendicular to the thickness direction DT is defined as the second lower area Sb2. Furthermore, the area of ​​the surface of the second upper electrode 42 perpendicular to the thickness direction DT is defined as the second upper area Su2. Furthermore, the end located on the outer edge of the surface of the second lower electrode 32 facing the second upper electrode 42 in the thickness direction DT is defined as the lower second electrode end 325. Furthermore, the end of the second upper electrode 42 located outside the second upper electrode 42 in the direction perpendicular to the thickness direction DT and in contact with the seventh film 217 is defined as the upper second electrode end 425. Furthermore, the minimum distance from the lower second electrode end 325 to the upper second electrode end 425 in the direction perpendicular to the thickness direction DT is defined as the second end distance Lub2.

[0065] The second upper area Su2 is larger than the second lower area Sb2, i.e., Su2>Sb2. Furthermore, the lower second electrode end 325 is located on the inner side of the second upper electrode 42 than the upper second electrode end 425 in the direction perpendicular to the thickness direction DT. The second end distance Lub2 is 10 μm or more and 50 μm or less.

[0066] Furthermore, the second upper electrode 42 has a second slit 427 and a second slit end 429 .

[0067] The second slit 427 is a hole that penetrates the second upper electrode 42 in the thickness direction DT. Further, the cross-section when the second slit 427 is cut in a direction orthogonal to the thickness direction DT corresponds to the shape of the second upper electrode 42, and here, it is formed in an oval shape. In FIG. 1, in order to clarify the location of the second slit 427, the second slit 427 is shown as a dotted pattern.

[0068] As shown in FIG. 2, the second slit end 429 is the outer edge of the surface of the second upper electrode 42 that faces the outside in the direction orthogonal to the thickness direction DT among the side surfaces of the second upper electrode 42 where the second slit 427 is formed, and it is in contact with the seventh film 217. Further, the second slit end 429 is located outside the second lower electrode 32 rather than the lower-side second electrode end 325 in the direction orthogonal to the thickness direction DT. Also, the second slit distance Lsb2 is set to be 1.0 μm or more and 50 μm or less. The second slit distance Lsb2 is the minimum distance from the second slit end 429 to the lower-side second electrode end 325 in the direction orthogonal to the thickness direction DT.

[0069] Furthermore, here, the distance from the surface of the sixth film 216 on the second lower electrode 32 side to the second lower electrode 32 in the thickness direction DT is defined as the lower-side second distance Lb2. Also, the distance from the surface of the sixth film 216 on the second upper electrode 42 side to the second upper electrode 42 in the thickness direction DT is defined as the upper-side second distance Lu2.

[0070] And the upper-side second distance Lu2 is smaller than the lower-side second distance Lb2, that is, Lu2 < Lb2. Further, the upper-side second distance Lu2 is set to be the same as the upper-side first distance Lu1, that is, Lu1 = Lu2. Also, the lower-side second distance Lb2 is set to be the same as the lower-side first distance Lb1, that is, Lb1 = Lb2. Here, "the same" includes the manufacturing error range.

[0071] 1, the second extension wiring 62 is formed together with the first lower electrode 31, the first extension wiring 61, and the second lower electrode 32. Furthermore, the second extension wiring 62 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and thus has electrical conductivity. The second extension wiring 62 also has a second connection portion 621, a third extension portion 622, and a fourth extension portion 623.

[0072] The second connection portion 621 is connected to the second lower electrode 32, and here, is connected to the lower-side third curved portion 321. Note that the second connection portion 621 is not limited to being connected to the lower-side third curved portion 321, and may be connected to the lower-side fourth curved portion 322 and the lower-side second straight portion 323.

[0073] 4, the outer edge of the cross section of the second connecting portion 621 when cut in a direction perpendicular to the thickness direction DT is formed into a concavely curved shape. Therefore, the center of curvature of the second connecting portion 621 is located outside the second connecting portion 621. The radius of curvature of the second connecting portion 621 is, for example, 10 μm. Furthermore, the second length L2 becomes shorter from the second connecting portion 621 toward the third extending portion 622 described below. The second length L2 is the length of the second connecting portion 621 in a direction perpendicular to the thickness direction DT and the direction in which the third extending portion 622 extends.

[0074] The third extension portion 622 is connected to the side of the second connection portion 621 opposite to the second lower electrode 32. The third extension portion 622 extends in a direction intersecting with the second shortest direction Dmin2. The second shortest direction Dmin2 is the shortest direction of a line segment connecting the second connection portion 621 and the shield portion 50 in a direction perpendicular to the thickness direction DT. Further, although the third extension portion 622 extends linearly here, it is not limited to this and may extend in a curved manner.

[0075] Here, the angle between a line extending in the second shortest direction Dmin2 and a line extending in the direction in which the third extension portion 622 extends is defined as a second angle θ2. The second angle θ2 is set to be equal to or greater than 45° and less than 90°.

[0076] 1, the fourth extension portion 623 is connected to the side of the third extension portion 622 opposite to the second connection portion 621. Furthermore, the fourth extension portion 623 extends in a direction intersecting the direction in which the third extension portion 622 extends, for example, in the second shortest direction Dmin2. This allows the fourth extension portion 623 to be connected to the arithmetic circuit 10. Note that, although the fourth extension portion 623 extends linearly here, it is not limited thereto and may extend in a curved line.

[0077] The direction in which the first lower electrode 31 and the second lower electrode 32 are arranged is defined as a parallel direction Dp. The first extension 612 and the third extension 622 face each other in the parallel direction Dp. The second extension 613 and the fourth extension 623 face each other in the parallel direction Dp.

[0078] Returning to FIG. 2, the second insulating film 22 is formed of, for example, silicon dioxide or the like, and thus has electrical insulation properties. The second insulating film 22 covers the outer periphery of the first upper electrode 41 and also covers the periphery of the outer periphery of the first upper electrode 41 in the seventh film 217. The second insulating film 22 covers the outer periphery of the second upper electrode 42 and also covers the periphery of the outer periphery of the second upper electrode 42 in the seventh film 217. After a film covering the first upper electrode 41 and the second upper electrode 42 is formed by, for example, CVD or the like, the film is thinned and flattened by CMP or the like. Then, a part of the first upper electrode 41 and the second upper electrode 42 is exposed by etching. For this reason, an opening is formed in the second insulating film 22. Note that CMP is an abbreviation for Chemical Mechanical Polishing.

[0079] The third insulating film 23 has electrical insulation properties because it is made of, for example, polyimide etc. Furthermore, the third insulating film 23 has a lower dielectric strength than the second insulating film 22.

[0080] Moreover, the third insulating film 23 covers the outer periphery of the first upper electrode 41 and fills the first slit 417. Furthermore, the third insulating film 23 covers the outer periphery of the second upper electrode 42 and fills the second slit 427. As a result, the expansion and contraction of the third insulating film 23 caused by a temperature change of the signal transmission device 5 is less likely to be restricted compared to a case where the first slit 417 and the second slit 427 are not filled with the third insulating film 23. Therefore, the thermal stress applied to the third insulating film 23 is alleviated, and the stress applied to the second insulating film 22 covered by the third insulating film 23 is alleviated.

[0081] The third insulating film 23 covers the second insulating film 22 and also covers the seventh film 217. After the third insulating film 23 is formed by coating or the like, it is formed into a predetermined pattern shape by patterning or the like. As a result, parts of the first upper electrode 41 and the second upper electrode 42 are exposed. For this reason, openings are formed in the third insulating film 23.

[0082] The signal transmission device 5 is configured as described above. Next, the operation of the signal transmission device 5 will be described.

[0083] In the signal transmission device 5, a voltage higher than that applied to the first lower electrode 31 is applied to the first upper electrode 41. A signal from the arithmetic circuit 10 is transmitted to an external device via the second extension 613, the first extension 612, the first connection 611, the first lower electrode 31, the first upper electrode 41, and a bonding wire (not shown) connected to the first upper electrode 41. A voltage higher than that applied to the second lower electrode 32 is applied to the second upper electrode 42. A signal from the arithmetic circuit 10 is transmitted to an external device via the fourth extension 623, the third extension 622, the second connection 621, and a bonding wire (not shown) connected to the second lower electrode 32, the second upper electrode 42, and the second upper electrode 42. The external device is, for example, an external chip or the like equipped with a drive circuit (not shown). In this case, for example, the drive circuit turns on and off a power switching element (not shown) based on a signal from the arithmetic circuit 10. This drives, for example, a motor or the like.

[0084] The signal transmission device 5 operates as described above. Next, it will be described how the signal transmission device 5 ensures the dielectric strength while suppressing an increase in the thickness between the electrodes.

[0085] Here, in the capacitor described in Patent Document 1, the electric field strength between the first terminal and the second terminal may be reduced by increasing the thickness of the dielectric material layer between the first terminal and the second terminal. This ensures the dielectric strength of the capacitor as a signal transmission device. However, increasing the thickness of the dielectric material layer increases the number of manufacturing steps in the manufacture of the capacitor, such as the formation of a large number of vias and wiring layers. This increases the cost of the capacitor. Also, if the thickness of the dielectric material layer is small, the electric field strength between the first terminal and the second terminal increases, and the dielectric strength of the capacitor is not ensured.

[0086] Furthermore, if the thickness of the dielectric material layer is small, when the lead-out wiring is connected to the second terminal, the lead-out wiring and the first terminal are close to each other. Therefore, as shown in Figs. 5 to 8, for example, when a relatively high voltage is applied to the first terminal 91 of the signal transmission device of the comparative example, the electric field strength between the first terminal 91 and the second terminal increases. Accordingly, the electric field strength between the first terminal 91 and the lead-out wiring 93 also increases. Note that Figs. 5 and 7 are diagrams showing the electric potential distribution and the electric field distribution in the vicinity of the first terminal 91 and the lead-out wiring 93 when a voltage of 3250V is applied between the first terminal 91 and the second terminal. Furthermore, Figs. 6 and 8 are diagrams showing the electric potential distribution and the electric field distribution in the vicinity of the first terminal 91 when a voltage of 3250V is applied between the first terminal 91 and the second terminal.

[0087] In contrast, the signal transmission device 5 of this embodiment includes a first lower electrode 31, a first upper electrode 41, a shield section 50, and a first lead-out wiring 61. The first upper electrode 41 faces the first lower electrode 31 in the thickness direction DT. A voltage higher than the voltage applied to the first lower electrode 31 is applied to the first upper electrode 41. The shield section 50 is disposed between the first lower electrode 31 and the first upper electrode 41 and the arithmetic circuit 10 in a direction perpendicular to the thickness direction DT. Furthermore, the potential of the shield section 50 is set to a reference potential. The first lower electrode 31 corresponds to the first electrode. The first upper electrode 41 corresponds to the second electrode. The shield section 50 corresponds to the ground. The first lead-out wiring 61 corresponds to the lead-out section. The arithmetic circuit 10 corresponds to an electronic circuit.

[0088] Moreover, the first extension wiring 61 has a first connection portion 611, a first extension portion 612, and a second extension portion 613. The first connection portion 611 is connected to the first lower electrode 31. The first extension portion 612 is connected to the first connection portion 611. The second extension portion 613 is connected to the first extension portion 612 and the arithmetic circuit 10.

[0089] Furthermore, the first extension portion 612 extends in a direction intersecting with the first shortest direction Dmin1. Moreover, the second extension portion 613 extends in a direction intersecting with the direction in which the first extension portion 612 extends, for example, in the first shortest direction Dmin1. Furthermore, a signal from the arithmetic circuit 10 is transmitted via the second extension portion 613, the first extension portion 612, the first connection portion 611, the first lower electrode 31, and the first upper electrode 41. Note that the first shortest direction Dmin1 is the shortest direction of a line segment connecting the first connection portion 611 and the shield portion 50 in a direction perpendicular to the thickness direction DT.

[0090] The strength of the electric field from the first upper electrode 41 is smaller in a direction not from the first upper electrode 41 to the shield section 50 than in a direction from the first upper electrode 41 to the shield section 50. In addition, since the first extension section 612 extends in a direction intersecting the first shortest direction Dmin1, the first outgoing wiring 61 extends in a direction not from the first upper electrode 41 to the shield section 50. Therefore, the electric field strength between the first upper electrode 41 and the first outgoing wiring 61 is smaller than when the first extension section 612 extends in the first shortest direction Dmin1. Furthermore, it is not necessary to thicken the first insulating film 21 between the first upper electrode 41 and the first lower electrode 31. Therefore, the dielectric strength of the signal transmission device 5 is ensured while suppressing an increase in the thickness between the electrodes.

[0091] The signal transmission device 5 also includes a second lower electrode 32, a second upper electrode 42, and a second lead-out wiring 62. The second upper electrode 42 faces the second lower electrode 32 in the thickness direction DT. Furthermore, a voltage higher than the voltage applied to the second lower electrode 32 is applied to the second upper electrode 42. A shield section 50 is disposed between the second lower electrode 32 and the second upper electrode 42 and the arithmetic circuit 10 in a direction perpendicular to the thickness direction DT.

[0092] Further, the second extension wiring 62 has a second connection portion 621, a third extension portion 622, and a fourth extension portion 623. The second connection portion 621 is connected to the second lower electrode 32. The third extension portion 622 is connected to the second connection portion 621. The fourth extension portion 623 is connected to the third extension portion 622 and the arithmetic circuit 10.

[0093] Furthermore, the third extension 622 extends in a direction intersecting with the second shortest direction Dmin2. Moreover, the fourth extension 623 extends in a direction intersecting with the direction in which the third extension 622 extends, for example, in the second shortest direction Dmin2. Furthermore, a signal of the arithmetic circuit 10 is transmitted via the fourth extension 623, the third extension 622, the second connection 621, the second lower electrode 32, and the second upper electrode 42. Note that the second shortest direction Dmin2 is the shortest direction of a line segment connecting the second connection 621 and the shield 50 in a direction perpendicular to the thickness direction DT.

[0094] As a result, similarly to the above, an increase in the thickness between the electrodes is suppressed, and the withstand voltage of the signal transmission device 5 is ensured.

[0095] Furthermore, the signal transmission device 5 of the first embodiment also provides the following advantages.

[0096] [1-1] The first lower electrode 31 has a lower-side first curved portion 311. The lower-side first curved portion 311 is curved toward the arithmetic circuit 10 in a direction perpendicular to the thickness direction DT. In addition, the first connection portion 611 is connected to the lower-side first curved portion 311.

[0097] As a result, the length of the first outgoing wiring 61 is shorter than when the first connection portion 611 is connected to the lower second curved portion 312 and the lower first straight portion 313. This reduces the parasitic capacitance of the first outgoing wiring 61. This increases the signal-to-noise ratio of the signal from the arithmetic circuit 10. This prevents the accuracy of the signal from the arithmetic circuit 10 from decreasing.

[0098] Moreover, the second lower electrode 32 has a lower-side third curved portion 321. The lower-side third curved portion 321 is curved toward the arithmetic circuit 10 in a direction perpendicular to the thickness direction DT. Furthermore, the second connection portion 621 is connected to the lower-side third curved portion 321.

[0099] This reduces the parasitic capacitance due to the second outgoing wiring 62, as described above, and increases the S / N ratio of the signal from the arithmetic circuit 10. This prevents the accuracy of the signal from the arithmetic circuit 10 from decreasing.

[0100] [1-2] Here, when a voltage higher than the voltage applied to the first lower electrode 31 is applied to the first upper electrode 41, the electric field strength near the upper-side first electrode end 415 becomes relatively large. Therefore, when the minimum distance from the upper-side first electrode end 415 to the first lower electrode 31 is relatively small, the electric field strength between the first upper electrode 41 and the first lower electrode 31 becomes large. Therefore, at this time, it is difficult to ensure the dielectric strength of the signal transmission device 5.

[0101] In contrast, in the signal transmission device 5, the first upper area Su1 is larger than the first lower area Sb1, i.e., Su1>Sb1. The first lower area Sb1 is the area of ​​the surface of the first lower electrode 31 perpendicular to the thickness direction DT. The first upper area Su1 is the area of ​​the surface of the first upper electrode 41 perpendicular to the thickness direction DT. The surface of the first lower electrode 31 perpendicular to the thickness direction DT corresponds to the surface of the first electrode intersecting with the thickness direction DT. The surface of the first upper electrode 41 perpendicular to the thickness direction DT corresponds to the surface of the second electrode intersecting with the thickness direction DT. The first lower area Sb1 corresponds to the first area. The first upper area Su1 corresponds to the second area.

[0102] Moreover, the lower first electrode end 315 is located on the inner side of the first upper electrode 41 than the upper first electrode end 415 in the direction perpendicular to the thickness direction DT. The lower first electrode end 315 corresponds to the first end. The upper first electrode end 415 corresponds to the second end.

[0103] As a result, the minimum distance from the upper first electrode end 415 to the first lower electrode 31 becomes larger compared to a case where the lower first electrode end 315 is located further outward in the direction perpendicular to the thickness direction DT than the upper first electrode end 415. This reduces the electric field strength between the first upper electrode 41 and the first lower electrode 31. This makes it easier to ensure the dielectric strength of the signal transmission device 5.

[0104] In the signal transmission device 5, the second upper area Su2 is larger than the second lower area Sb2, i.e., Su2>Sb2. Furthermore, the lower-side second electrode end 325 is located more inward of the second upper electrode 42 than the upper-side second electrode end 425 in the direction perpendicular to the thickness direction DT.

[0105] As a result, similarly to the above, the minimum distance from the upper second electrode end 425 to the second lower electrode 32 becomes smaller. This reduces the electric field strength between the second upper electrode 42 and the second lower electrode 32. This makes it easier to ensure the dielectric strength of the signal transmission device 5.

[0106] [1-3] Here, when the first inter-electrode distance Lud1 is relatively small, the electric field strength between the first upper electrode 41 and the first lower electrode 31 increases, and the dielectric strength of the signal transmission device 5 decreases. On the other hand, when the first inter-electrode distance Lud1 is relatively large, the capacitance between the first lower electrode 31 and the first upper electrode 41 decreases, and the capacitance of the signal transmission device 5 decreases.

[0107] In contrast, in the signal transmission device 5, the first inter-electrode distance Lud1 is set to be not less than 5.0 μm and not more than 8.0 μm. Note that the first inter-electrode distance Lud1 here is the distance from the first upper electrode 41 to the first lower electrode 31 in the thickness direction DT, and corresponds to the distance from the first electrode to the second electrode in the thickness direction DT.

[0108] This prevents the first inter-electrode distance Lud1 from being excessively small or large, compared with the case where the first inter-electrode distance Lud1 is less than 5.0 μm or greater than 8.0 μm, and therefore ensures both the dielectric strength and capacitance of the signal transmission device 5.

[0109] Furthermore, in the signal transmission device 5, the second inter-electrode distance Lud2 is set to be not less than 5.0 μm and not more than 8.0 μm. The second inter-electrode distance Lud2 is the distance from the second upper electrode 42 to the second lower electrode 32 in the thickness direction DT.

[0110] This prevents the second inter-electrode distance Lud2 from being excessively small or large, compared with the case where the second inter-electrode distance Lud2 is less than 5.0 μm or more than 8.0 μm, and therefore ensures both the dielectric strength voltage and the capacitance of the signal transmission device 5.

[0111] [1-4] The outer edge of the cross section of the first connecting portion 611 when cut in a direction perpendicular to the thickness direction DT is formed into a concavely curved shape. The first length L1 becomes shorter from the first connecting portion 611 toward the first extending portion 612. The first length L1 is the length of the first connecting portion 611 in a direction perpendicular to the thickness direction DT and the direction in which the first extending portion 612 extends. The direction perpendicular to the thickness direction DT and the direction in which the first extending portion 612 extends corresponds to a direction intersecting the thickness direction DT and the direction in which the first extending portion 612 extends.

[0112] This makes it difficult for electric field concentration to occur near the first connection portion 611, compared to when the corner of the first connection portion 611 is a right angle. Therefore, as shown in Fig. 9, the maximum electric field strength of the signal transmission device 5 is smaller, compared to when the corner of the first connection portion 611 is a right angle. This makes it easier to ensure the dielectric strength of the signal transmission device 5.

[0113] Moreover, the outer edge of the cross section of the second connecting portion 621 when cut in a direction perpendicular to the thickness direction DT is formed into a concavely curved shape. Furthermore, the second length L2 becomes shorter from the second connecting portion 621 toward the third extending portion 622. Note that the second length L2 is the length of the second connecting portion 621 in a direction perpendicular to the thickness direction DT and the direction in which the third extending portion 622 extends.

[0114] As a result, similarly to the above, electric field concentration is less likely to occur near the second connection portion 621. This reduces the maximum electric field strength of the signal transmission device 5. This makes it easier to ensure the dielectric strength of the signal transmission device 5.

[0115] [1-5] The first angle θ1 is greater than or equal to 45° and less than 90°. Note that the first angle θ1 is the angle between a line extending in the first shortest direction Dmin1 and a line extending in the direction in which the first extension portion 612 extends.

[0116] As a result, the first extension 612 is less likely to extend in the first shortest direction Dmin1, that is, is more likely to extend in a direction not from the first upper electrode 41 toward the shield part 50. This reduces the electric field intensity near the first extension wiring 61. Furthermore, compared to the case where the first angle θ1 is 90° or more and less than 180°, the first extension 612 extends toward the arithmetic circuit 10, so the length of the second extension 613 is shorter. Therefore, the length of the first extension wiring 61 is relatively short. This reduces the parasitic capacitance of the first extension wiring 61. This increases the signal-to-noise ratio of the signal from the arithmetic circuit 10. This suppresses deterioration in accuracy of the signal from the arithmetic circuit 10.

[0117] The second angle θ2 is equal to or greater than 45° and less than 90°. Note that the second angle θ2 is the angle between a line extending in the second shortest direction Dmin2 and a line extending in the direction in which the third extension portion 622 extends.

[0118] As a result, the electric field strength near the second outgoing wiring 62 is reduced, as described above. Furthermore, compared to when the second angle θ2 is equal to or greater than 90° and less than 180°, the length of the second outgoing wiring 62 is shorter, and therefore the parasitic capacitance due to the second outgoing wiring 62 is reduced. Therefore, the signal-to-noise ratio of the signal from the arithmetic circuit 10 is increased. Thus, deterioration in accuracy of the signal from the arithmetic circuit 10 is suppressed.

[0119] [1-6] The signal transmission device 5 includes a first lower electrode 31, a first lower electrode 31, a first upper electrode 41, a second lower electrode 32, a second upper electrode 42, a first outgoing wiring 61, and a second outgoing wiring 62. The first outgoing wiring 61 has a first extension portion 612 and a second extension portion 613. The second outgoing wiring 62 has a third extension portion 622 and a fourth extension portion 623. The second lower electrode 32 corresponds to the third electrode. The second upper electrode 42 corresponds to the fourth electrode. The first outgoing wiring 61 corresponds to the first outgoing portion. The second outgoing wiring 62 corresponds to the second outgoing portion.

[0120] The first extension 612 and the third extension 622 face each other in the parallel direction Dp. The second extension 613 and the fourth extension 623 face each other in the parallel direction Dp. The parallel direction Dp is the direction in which the first lower electrode 31 and the second lower electrode 32 are aligned.

[0121] As a result, the first outgoing wiring 61 and the second outgoing wiring 62 are closer to each other than when they are not facing each other. This makes it easier to manufacture both the first outgoing wiring 61 and the second outgoing wiring 62. Therefore, variations caused by the manufacture of the first outgoing wiring 61 and the second outgoing wiring 62 are smaller than when the first outgoing wiring 61 and the second outgoing wiring 62 are not facing each other.

[0122] Second embodiment The second embodiment differs from the first embodiment in the configurations of a first connecting portion 611 and a second connecting portion 621. Other than this, the second embodiment is similar to the first embodiment.

[0123] Specifically, as shown in Fig. 10, the cross section of the first connection portion 611 when cut in a direction perpendicular to the thickness direction DT is formed in a trapezoidal shape. The first length L1 becomes shorter from the first connection portion 611 toward the first extension portion 612. This makes it difficult for electric field concentration to occur near the first connection portion 611, as described above. Therefore, as shown in Fig. 9, the maximum electric field intensity of the signal transmission device 5 is smaller than when the corner of the first connection portion 611 is a right angle.

[0124] 11, the cross section of the second connection portion 621 when cut in a direction perpendicular to the thickness direction DT is formed in a trapezoidal shape. The second length L2 becomes shorter from the second connection portion 621 toward the third extension portion 622. As a result, electric field concentration is less likely to occur near the second connection portion 621, as described above. Therefore, the maximum electric field intensity of the signal transmission device 5 is smaller than when the corner of the second connection portion 621 is a right angle.

[0125] The signal transmission device 5 of the second embodiment is configured as described above. The second embodiment also provides the same effects as the first embodiment.

[0126] Third embodiment In the third embodiment, the signal transmission device 5 includes a first arithmetic circuit 11 and a second arithmetic circuit 12 instead of the arithmetic circuit 10. Furthermore, the signal transmission device 5 includes a third outgoing wiring 63 and a fourth outgoing wiring 64 in addition to the first outgoing wiring 61 and the second outgoing wiring 62. Other than these, the signal transmission device 5 is similar to the first embodiment.

[0127] Specifically, the first arithmetic circuit 11 corresponds to a first electronic circuit, and is an electronic circuit such as a microcomputer that executes arithmetic operations and logical operations. In addition, as shown in Fig. 12, a part of the shield part 50 is disposed between the first arithmetic circuit 11 and the first lower electrode 31, the first upper electrode 41, the second lower electrode 32, and the second upper electrode 42 in a direction perpendicular to the thickness direction DT.

[0128] The second arithmetic circuit 12 corresponds to a second electronic circuit, and is an electronic circuit such as a microcomputer that executes arithmetic operations and logical operations. Furthermore, in a direction perpendicular to the thickness direction DT, a part of the shield section 50 is disposed between the second arithmetic circuit 12 and the first lower electrode 31, the first upper electrode 41, the second lower electrode 32, and the second upper electrode 42. Here, the second arithmetic circuit 12 is located on the opposite side of the first arithmetic circuit 11 with respect to the first lower electrode 31, the first upper electrode 41, the second lower electrode 32, and the second upper electrode 42.

[0129] The third extension wiring 63 corresponds to the second extension portion, and is formed together with the first lower electrode 31, the first extension wiring 61, the second lower electrode 32, and the second extension wiring 62. Furthermore, the third extension wiring 63 is made of a metal such as aluminum, tungsten, copper, titanium, or tantalum, and thus has electrical conductivity. The third extension wiring 63 also has a third connection portion 631, a fifth extension portion 632, and a sixth extension portion 633.

[0130] The third connection portion 631 is connected to the first lower electrode 31, and here, is connected to the lower-side second curved portion 312. Note that the third connection portion 631 is not limited to being connected to the lower-side second curved portion 312, and may be connected to the lower-side first curved portion 311 and the lower-side first straight portion 313.

[0131] Furthermore, as shown in FIG. 13, the outer edge of the cross section of the third connection part 631 when cut in a direction perpendicular to the thickness direction DT is formed in a concavely curved shape. Therefore, the center of curvature of the third connection part 631 is located outside the third connection part 631. The radius of curvature of the third connection part 631 is, for example, 10 μm. Furthermore, the third length L3 is shortened from the third connection part 631 toward the fifth extension part 632 described later. The third length L3 is the length of the third connection part 631 in a direction perpendicular to the thickness direction DT and the direction in which the fifth extension part 632 extends. Furthermore, the outer edge of the cross section of the third connection part 631 when cut in a direction perpendicular to the thickness direction DT is not limited to being formed in a concavely curved shape. For example, the cross section of the third connection part 631 when cut in a direction perpendicular to the thickness direction DT may be formed in a trapezoidal shape or the like.

[0132] The fifth extension 632 is connected to the side of the third connection portion 631 opposite to the first lower electrode 31. The fifth extension 632 extends in a direction intersecting with the third shortest direction Dmin3. The third shortest direction Dmin3 is the shortest direction of a line segment connecting the third connection portion 631 and the shield portion 50 in a direction perpendicular to the thickness direction DT. Further, although the fifth extension 632 extends linearly here, it is not limited to this and may extend in a curved manner.

[0133] Here, a third angle θ3 is defined as an angle formed by a line extending in the third shortest direction Dmin3 and a line extending in the direction in which the third connection portion 631 extends. The third angle θ3 is set to be equal to or greater than 45° and less than 90°.

[0134] 12, the sixth extension portion 633 is connected to the fifth extension portion 632 on the opposite side to the third connection portion 631. Furthermore, the sixth extension portion 633 extends in a direction intersecting the direction in which the fifth extension portion 632 extends, for example, in the third shortest direction Dmin3. This allows the sixth extension portion 633 to be connected to the second arithmetic circuit 12. Note that, although the sixth extension portion 633 extends linearly here, it is not limited thereto and may extend in a curved line.

[0135] The fourth extension wiring 64 is formed together with the first lower electrode 31, the second lower electrode 32, the first extension wiring 61, the second extension wiring 62, and the third extension wiring 63. Furthermore, the fourth extension wiring 64 is formed of a metal such as aluminum, tungsten, copper, titanium, or tantalum. The fourth extension wiring 64 also has a fourth connection portion 641, a seventh extension portion 642, and an eighth extension portion 643.

[0136] The fourth connection portion 641 is connected to the second lower electrode 32, and here, is connected to the lower-side fourth curved portion 322. Note that the fourth connection portion 641 is not limited to being connected to the lower-side fourth curved portion 322, and may be connected to the lower-side third curved portion 321 and the lower-side second straight portion 323.

[0137] Furthermore, as shown in FIG. 14, the outer edge of the cross section of the fourth connecting portion 641 when cut in a direction perpendicular to the thickness direction DT is formed in a concavely curved shape. Therefore, the center of curvature of the fourth connecting portion 641 is located outside the fourth connecting portion 641. The radius of curvature of the fourth connecting portion 641 is, for example, 10 μm. Furthermore, the fourth length L4 becomes shorter as it moves from the fourth connecting portion 641 toward the seventh extension portion 642 described later. Note that the fourth length L4 is the length of the fourth connecting portion 641 in a direction perpendicular to the thickness direction DT and the direction in which the seventh extension portion 642 described later extends. Furthermore, the outer edge of the cross section of the fourth connecting portion 641 when cut in a direction perpendicular to the thickness direction DT is not limited to being formed in a concavely curved shape. For example, the cross section of the fourth connecting portion 641 when cut in a direction perpendicular to the thickness direction DT may be formed in a trapezoidal shape or the like.

[0138] The seventh extension portion 642 is connected to the side of the fourth connection portion 641 opposite to the second lower electrode 32. The seventh extension portion 642 extends in a direction intersecting with the fourth shortest direction Dmin4. The fourth shortest direction Dmin4 is the shortest direction of a line segment connecting the fourth connection portion 641 and the shield portion 50 in a direction perpendicular to the thickness direction DT. Furthermore, although the seventh extension portion 642 extends linearly here, it is not limited to this and may extend in a curved manner.

[0139] Here, a fourth angle θ4 is defined as the angle between a line extending in the fourth shortest direction Dmin4 and a line extending in the direction in which the seventh extension portion 642 extends. The fourth angle θ4 is set to be equal to or greater than 45° and less than 90°.

[0140] 12, the eighth extension portion 643 is connected to the seventh extension portion 642 on the opposite side to the fourth connection portion 641. Furthermore, the eighth extension portion 643 extends in a direction intersecting the direction in which the seventh extension portion 642 extends, for example, in the fourth shortest direction Dmin4. This allows the eighth extension portion 643 to be connected to the second arithmetic circuit 12. Note that, although the eighth extension portion 643 extends linearly here, it is not limited thereto and may extend in a curved shape.

[0141] Moreover, the fifth extension portion 632 and the seventh extension portion 642 face each other in the parallel direction Dp. Furthermore, the sixth extension portion 633 and the eighth extension portion 643 face each other in the parallel direction Dp.

[0142] The signal transmission device 5 of the third embodiment is configured as described above. The third embodiment also provides the same effects as the first embodiment.

[0143] (Fourth embodiment) The fourth embodiment differs from the first embodiment in the configurations of a first connecting portion 611 and a second connecting portion 621. Other than this, the fourth embodiment is similar to the first embodiment.

[0144] Specifically, as shown in FIG. 15, the first connection portion 611 is connected to the side of the lower first curved portion 311 opposite to the second lower electrode 32.

[0145] The second connection portion 621 is connected to the lower-side third curved portion 321 on the opposite side to the first lower electrode 31. Therefore, the first connection portion 611 and the second connection portion 621 do not face each other in the parallel direction Dp. Furthermore, the second extension portion 613 and the fourth extension portion 623 do not face each other in the parallel direction Dp.

[0146] The signal transmission device 5 of the fourth embodiment is configured as described above. The fourth embodiment also provides the same effects as the first embodiment.

[0147] Fifth embodiment In the first embodiment, the signal transmission device 5 includes a first lower electrode 31, a first upper electrode 41, a first outgoing wiring 61, a second lower electrode 32, a second upper electrode 42 and a second outgoing wiring 62, and includes two capacitors.

[0148] In contrast, in the fifth embodiment, as shown in FIG. 16, the signal transmission device 5 does not include the second lower electrode 32, the second upper electrode 42, and the second lead wiring 62. Therefore, the signal transmission device 5 includes one capacitor. Also, for this reason, the size of the shield part 50 is adjusted. The rest is the same as in the first embodiment. The fifth embodiment also provides the same effects as the first embodiment.

[0149] (Other embodiments) The present disclosure is not limited to the above-described embodiments, and appropriate modifications can be made to the above-described embodiments. Furthermore, in each of the above-described embodiments, it goes without saying that the elements constituting the embodiments are not necessarily essential, except in cases where they are particularly clearly stated as essential or where they are clearly considered essential in principle.

[0150] In each of the above embodiments, the first lower electrode 31, the first upper electrode 41, the second lower electrode 32, and the second upper electrode 42 are formed in an elliptical shape in a cross section cut in a direction perpendicular to the thickness direction DT. In contrast, the first lower electrode 31, the first upper electrode 41, the second lower electrode 32, and the second upper electrode 42 are not limited to being formed in an elliptical shape in a cross section cut in a direction perpendicular to the thickness direction DT. The first lower electrode 31, the first upper electrode 41, the second lower electrode 32, and the second upper electrode 42 may be formed in a polygonal shape having pentagons or more, a star shape, a circle shape, an ellipse shape, or the like in a cross section cut in a direction perpendicular to the thickness direction DT.

[0151] In each of the above embodiments, the first slit 417 and the second slit 427 are formed in an elliptical shape in a cross section cut in a direction perpendicular to the thickness direction DT. In contrast, the first slit 417 and the second slit 427 are not limited to being formed in an elliptical shape in a cross section cut in a direction perpendicular to the thickness direction DT. The first slit 417 and the second slit 427 may be formed in a polygonal shape, a star shape, a circular shape, an elliptical shape, or the like in a cross section cut in a direction perpendicular to the thickness direction DT.

[0152] In each of the above embodiments, the number of capacitors is 1 or 2. However, the number of capacitors is not limited to 1 or 2, and may be 3 or more.

[0153] In each of the above embodiments, the dielectric strength voltage of the third insulating film 23 is lower than the dielectric strength voltage of the second insulating film 22, but this is not limited to the above, and the dielectric strength voltage of the third insulating film 23 may be equal to or higher than the dielectric strength voltage of the second insulating film 22.

[0154] In each of the above-described embodiments, the first upper area Su1 is larger than the first lower area Sb1. In contrast, the first upper area Su1 is not limited to being larger than the first lower area Sb1. The first upper area Su1 may be equal to or smaller than the first lower area Sb1. Therefore, the lower-side first electrode end 315 may be located on the outer side of the first upper electrode 41 than the upper-side first electrode end 415 in the direction perpendicular to the thickness direction DT.

[0155] Also, the second upper area Su2 is larger than the second lower area Sb2. On the other hand, the second upper area Su2 is not limited to being larger than the second lower area Sb2. The second upper area Su2 may be equal to or smaller than the second lower area Sb2. Therefore, the lower-side second electrode end 325 may be located on the outer side of the second upper electrode 42 than the upper-side second electrode end 425 in the direction perpendicular to the thickness direction DT.

[0156] The above embodiments may be combined as appropriate.

[0157] (In view of the present disclosure) [Point 1] A signal transmission device, comprising: A semiconductor substrate (7); an insulating film (21) having electrical insulation properties and formed on the semiconductor substrate; A first electrode (31) covered with the insulating film; a second electrode (41) formed on the insulating film, facing the first electrode in a thickness direction (DT) of the semiconductor substrate, and to which a voltage higher than that applied to the first electrode is applied; a ground (50) that is disposed between the first electrode and the second electrode and an electronic circuit (10) in a direction perpendicular to the thickness direction and has a reference potential; an extension portion (61) having a connection portion (611) connected to the first electrode, a first extension portion (612) connected to the connection portion, and a second extension portion (613) connected to the first extension portion and the electronic circuit; Equipped with the first extension portion extends in a direction perpendicular to the thickness direction and intersecting with a shortest direction (Dmin1) of a line segment connecting the connection portion and the ground, The second extension portion extends in a direction intersecting a direction in which the first extension portion extends, A signal transmission device in which a signal from the electronic circuit is transmitted via the second extension portion, the first extension portion, the connection portion, the first electrode, and the second electrode. [Point 2] the first electrode has a curved portion (311) formed to be curved on the electronic circuit side in a direction perpendicular to the thickness direction, 2. The signal transmission device according to claim 1, wherein the connection portion is connected to the bending portion. [Point 3] The area of ​​the surface of the first electrode intersecting the thickness direction is defined as a first area (Sb1); If the area of ​​the surface of the second electrode intersecting the thickness direction is a second area (Su1), The second area is greater than the first area, the first electrode has a first end (315) located at an outer edge of a surface facing the second electrode in the thickness direction, the second electrode has a second end (415) located outside the second electrode in a direction perpendicular to the thickness direction and in contact with the insulating film; 3. The signal transmission device according to aspect 1 or 2, wherein the first end is located more inward of the second electrode than the second end in a direction perpendicular to the thickness direction. [Point 4] The signal transmission device according to any one of Aspects 1 to 3, wherein a distance (Lud1) from the first electrode to the second electrode in the thickness direction is not less than 5.0 μm and not more than 8.0 μm. [Point 5] an outer edge of the cross section of the connection portion when cut in a direction perpendicular to the thickness direction is formed into a concavely curved shape, A signal transmission device described in any one of aspects 1 to 4, wherein the length (L1) of the connection portion in a direction intersecting the thickness direction and the direction in which the first extension portion extends becomes shorter as it moves from the connection portion to the first extension portion. [Point 6] A cross section of the connection portion when cut in a direction perpendicular to the thickness direction is formed into a trapezoidal shape, A signal transmission device described in any one of aspects 1 to 4, wherein the length (L1) of the connection portion in a direction intersecting the thickness direction and the direction in which the first extension portion extends becomes shorter as it moves from the connection portion to the first extension portion. [Point 7] A signal transmission device described in any one of viewpoints 1 to 6, wherein an angle (θ1) between a straight line extending in the shortest direction (Dmin1) of a line segment connecting the connection portion and the ground in a direction perpendicular to the thickness direction and a straight line extending in the direction in which the first extension portion extends is greater than or equal to 45° and less than 90°. [Point 8] The drawer portion is a first drawer portion, The connection portion is a first connection portion, The signal transmission device is a third electrode (32) that is covered with the insulating film and is aligned with the first electrode in a direction perpendicular to the thickness direction; a fourth electrode (42) formed on the insulating film and facing the third electrode in the thickness direction, the fourth electrode being applied with a voltage higher than that applied to the third electrode; a second extension portion (62) having a second connection portion (621) connected to the third electrode, a third extension portion (622) connected to the second connection portion, and a fourth extension portion (623) connected to the third extension portion and the electronic circuit; Equipped with the ground is disposed between the third electrode and the electronic circuit and between the fourth electrode and the electronic circuit in a direction perpendicular to the thickness direction; the third extension portion extends in a direction perpendicular to the thickness direction and intersecting with a shortest direction (Dmin2) of a line segment connecting the second connection portion and the ground, The fourth extension portion extends in a direction intersecting a direction in which the third extension portion extends, a signal from the electronic circuit is transmitted through the fourth extension portion, the third extension portion, the second connection portion, the third electrode, and the fourth electrode; the first extension portion and the third extension portion face each other in a direction (Dp) in which the first electrode and the third electrode are arranged, 8. The signal transmission device according to any one of aspects 1 to 7, wherein the second extension portion and the fourth extension portion face each other in a direction (Dp) in which the first electrode and the third electrode are arranged. [Point 9] The drawer portion is a first drawer portion, The connection portion is a first connection portion, The electronic circuit is a first electronic circuit, the ground is disposed between the first electrode and the second electrode and a second electronic circuit (12) in a direction perpendicular to the thickness direction; the signal transmission device comprises a second extension portion (63) having a second connection portion (631) connected to the first electrode, a third extension portion (632) connected to the second connection portion, and a fourth extension portion (633) connected to the third extension portion and the second electronic circuit; the third extension portion extends in a direction perpendicular to the thickness direction and intersecting with a shortest direction (Dmin3) of a line segment connecting the second connection portion and the ground, The fourth extension portion extends in a direction intersecting a direction in which the third extension portion extends, A signal transmission device described in any one of aspects 1 to 7, wherein a signal from the second electronic circuit is transmitted via the fourth extension portion, the third extension portion, the second connection portion, the first electrode and the second electrode. [Explanation of symbols]

[0158] 7. Semiconductor Substrates 10 Arithmetic circuit 21 First insulating film 31 1st lower electrode 41 1st lower electrode 50 Shield section 61 First lead wire 611 First connection part 612 1st extension 613 2nd extension

Claims

1. A signal transmission device, comprising: A semiconductor substrate (7); An insulating film (21) having electrical insulation properties and formed on the semiconductor substrate; A first electrode (31) covered with the insulating film; a second electrode (41) formed on the insulating film and facing the first electrode in a thickness direction (DT) of the semiconductor substrate, to which a voltage higher than that applied to the first electrode is applied; a ground (50) disposed between the first electrode and the second electrode and an electronic circuit (10) in a direction perpendicular to the thickness direction, the ground (50) having a reference potential; an extension portion (61) having a connection portion (611) connected to the first electrode, a first extension portion (612) connected to the connection portion, and a second extension portion (613) connected to the first extension portion and the electronic circuit; Equipped with the first extension portion extends in a direction perpendicular to the thickness direction and intersecting a shortest direction (Dmin1) of a line segment connecting the connection portion and the ground, The second extension portion extends in a direction intersecting a direction in which the first extension portion extends, A signal transmission device in which a signal from the electronic circuit is transmitted via the second extension portion, the first extension portion, the connection portion, the first electrode, and the second electrode.

2. The first electrode has a curved portion (311) formed to be curved on the electronic circuit side in a direction perpendicular to the thickness direction, The signal transmission device according to claim 1 , wherein the connection portion is connected to the curved portion.

3. The area of ​​the surface of the first electrode intersecting the thickness direction is defined as a first area (Sb1), If the area of ​​the surface of the second electrode intersecting the thickness direction is a second area (Su1), The second area is greater than the first area, The first electrode has a first end (315) located at an outer edge of a surface facing the second electrode in the thickness direction, the second electrode has a second end (415) located outside the second electrode in a direction perpendicular to the thickness direction and in contact with the insulating film; The signal transmission device according to claim 1 , wherein the first end is located more inward of the second electrode than the second end in a direction perpendicular to the thickness direction.

4. 3. The signal transmission device according to claim 1, wherein a distance (Lud1) from the first electrode to the second electrode in the thickness direction is not less than 5.0 μm and not more than 8.0 μm.

5. an outer edge of the cross section of the connection portion when cut in a direction perpendicular to the thickness direction is formed into a concavely curved shape, 3. A signal transmission device as described in claim 1 or 2, wherein a length (L1) of the connection portion in a direction intersecting the thickness direction and the direction in which the first extension portion extends becomes shorter as it moves from the connection portion to the first extension portion.

6. A cross section of the connection portion when cut in a direction perpendicular to the thickness direction is formed into a trapezoidal shape, 3. A signal transmission device as described in claim 1 or 2, wherein a length (L1) of the connection portion in a direction intersecting the thickness direction and the direction in which the first extension portion extends becomes shorter as it moves from the connection portion to the first extension portion.

7. 3. A signal transmission device as described in claim 1 or 2, wherein an angle (θ1) between a straight line extending in the shortest direction (Dmin1) of a line segment connecting the connection portion and the ground in a direction perpendicular to the thickness direction and a straight line extending in the direction in which the first extension portion extends is greater than or equal to 45° and less than 90°.

8. The lead-out portion is a first lead-out portion, The connection portion is a first connection portion, The signal transmission device is a third electrode (32) that is covered with the insulating film and is aligned with the first electrode in a direction perpendicular to the thickness direction; a fourth electrode (42) formed on the insulating film and facing the third electrode in the thickness direction, to which a voltage higher than that applied to the third electrode is applied; a second extension portion (62) having a second connection portion (621) connected to the third electrode, a third extension portion (622) connected to the second connection portion, and a fourth extension portion (623) connected to the third extension portion and the electronic circuit; Equipped with the ground is disposed between the third electrode and the electronic circuit and between the fourth electrode and the electronic circuit in a direction perpendicular to the thickness direction; the third extension portion extends in a direction perpendicular to the thickness direction and intersecting a shortest direction (Dmin2) of a line segment connecting the second connection portion and the ground, The fourth extension portion extends in a direction intersecting a direction in which the third extension portion extends, a signal from the electronic circuit is transmitted via the fourth extension portion, the third extension portion, the second connection portion, the third electrode, and the fourth electrode; the first extension portion and the third extension portion face each other in a direction (Dp) in which the first electrode and the third electrode are arranged, The signal transmission device according to claim 1 , wherein the second extension portion and the fourth extension portion face each other in a direction (Dp) in which the first electrode and the third electrode are arranged.

9. The lead-out portion is a first lead-out portion, The connection portion is a first connection portion, The electronic circuit is a first electronic circuit, the ground is disposed between the first electrode and the second electrode and a second electronic circuit (12) in a direction perpendicular to the thickness direction; The signal transmission device comprises a second extension portion (63) having a second connection portion (631) connected to the first electrode, a third extension portion (632) connected to the second connection portion, and a fourth extension portion (633) connected to the third extension portion and the second electronic circuit; the third extension portion extends in a direction perpendicular to the thickness direction and intersecting with a shortest direction (Dmin3) of a line segment connecting the second connection portion and the ground, The fourth extension portion extends in a direction intersecting a direction in which the third extension portion extends, The signal transmission device according to claim 1 or 2, wherein a signal from the second electronic circuit is transmitted via the fourth extension portion, the third extension portion, the second connection portion, the first electrode and the second electrode.

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