Light detection device and manufacturing method for the same

Abstract

To provide a light detection device with improved quality, in which an organic layer can be patterned easily, and a manufacturing method for the light detection device.SOLUTION: A light detection device 1 includes a lower part structure 100, one or more common wire connection parts 400 and one or more pixel electrodes 210 provided on the lower part structure 100, an organic photoelectric conversion layer 220 overlapped on the one or more pixel electrodes 210 and not overlapped with the one or more common wire connection parts 400, and a transparent electrode layer 230 overlapped on the organic photoelectric conversion layer 220 and overlapped also on the one or more common wire connection parts 400. A part of the transparent electrode layer 230 that overlaps with the one or more pixel electrodes 210 is thicker than the rest.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a light detection device and a method for manufacturing a light detection device. [Background technology]

[0002] 2. Description of the Related Art In recent years, a detection device in which organic photoelectric conversion elements (OPDs) are arranged on a substrate has become known. Such a detection device is used as a biosensor for detecting biometric information such as fingerprints and veins.

[0003] In a detection device using an OPD, a thin film transistor, an OPD layer, and the like are formed on a substrate. The OPD layer is formed by disposing an organic layer having multiple layers including an organic light receiving layer between an upper electrode and a lower electrode. Here, for example, Patent Document 1 discloses a detection device in which an OPD layer is selectively formed only in a sensor region. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-68793 Summary of the Invention [Problem to be solved by the invention]

[0005] In order to improve the film uniformity of the organic layer, the inventors of the present application have been studying a process of coating the entire substrate with an organic layer and then patterning it by dry etching. When etching the organic layer, since a selectivity cannot be obtained with a general resist, it is necessary to provide an inorganic material such as SiN, SiO, or AlOx as a protective layer on the organic layer. However, when the protective layer is removed after etching the organic layer, the underlying layer made of the same material as the protective layer is also lost at the same time. In addition, if a residue of the protective layer is generated on the organic layer, the sensor characteristics are deteriorated.

[0006] The present invention has been made in view of the above problems, and one of its objects is to provide a photodetector that facilitates patterning of an organic layer and has improved quality, and a method for manufacturing the same. [Means for solving the problem]

[0007] (1) A method for manufacturing a photodetector according to the present invention includes a lower structure forming step of forming a lower structure, a pixel electrode forming step of forming one or more common wiring connections and one or more pixel electrodes on the lower structure, an organic photoelectric conversion layer forming step of continuously forming an organic photoelectric conversion layer on the one or more common wiring connections and the one or more pixel electrodes, a first transparent electrode layer forming step of continuously forming a first transparent electrode layer on the one or more common wiring connections and the one or more pixel electrodes, and a resist patterning step of forming a first transparent electrode layer on the one or more pixel electrodes while overlapping the one or more pixel electrodes and not overlapping the one or more common wiring connections. the first transparent electrode layer etching step of removing a portion of the first transparent electrode layer that is not covered with the resist; the organic photoelectric conversion layer etching step of removing the resist and removing a portion of the organic photoelectric conversion layer that is not covered with the first transparent electrode layer to expose the one or more common wiring connection portions; and the second transparent electrode layer forming step of continuously forming a second transparent electrode layer so as to overlap the organic photoelectric conversion layer or the first transparent electrode layer and also overlap the one or more common wiring connection portions.

[0008] (2) In the method for manufacturing a photodetector described in (1) above, the second transparent electrode layer forming process may form the second transparent electrode layer so as to overlap the first transparent electrode layer and also overlap the one or more common wiring connection portions.

[0009] (3) In the method for manufacturing a photodetector described in (1) above, after the organic photoelectric conversion layer etching step, a first transparent electrode layer removal step of removing the first transparent electrode layer may be further included, and the second transparent electrode layer formation step may form the second transparent electrode layer so as to overlap the organic photoelectric conversion layer and also overlap the one or more common wiring connection portions.

[0010] (4) In the method for manufacturing a photodetector described above in (1), the resist forming step may include forming the resist on the first transparent electrode layer so as to overlap each of the pixel electrodes.

[0011] (5) In the method for manufacturing a photodetector described in (4) above, the pixel electrode forming step may include forming two or more of the pixel electrodes and one of the common wiring connection portions, and the second transparent electrode layer forming step may include forming the second transparent electrode layer so as to overlap the organic photoelectric conversion layer or the first transparent electrode layer and also to overlap the one of the common wiring connection portions.

[0012] (6) In the method for manufacturing a photodetector described in (4) above, the pixel electrode forming step may form one pixel electrode and one common wiring connection portion adjacent to each other, and the second transparent electrode layer forming step may form the second transparent electrode layer so as to overlap the one pixel electrode and also overlap the one common wiring connection portion.

[0013] (7) In the method for manufacturing a photodetector described in (4) above, the method may further include a rib formation step of forming a rib so as to cover a side surface of the organic photoelectric conversion layer after the organic photoelectric conversion layer etching step and before the second transparent electrode layer forming step.

[0014] (8) In the photodetector described in any one of (1) to (3) above, the first transparent electrode layer and the second transparent electrode layer may be made of the same material.

[0015] (9) In the photodetector device described in any one of (1) to (3) above, the first transparent electrode layer may be made of an indium-based oxide.

[0016] (10) In the photodetector device described in any one of (1) to (3) above, the first transparent electrode layer may be made of indium zinc oxide (IZO).

[0017] (11) In the method for manufacturing a photodetector described above in (1), the first transparent electrode layer etching step may remove the portion of the first transparent electrode layer that is not covered with the resist by an inductively coupled plasma method using a gas containing CH4.

[0018] (12) In the method for manufacturing a photodetector described in (1) above, the organic photoelectric conversion layer etching process may remove the resist and remove a portion of the organic photoelectric conversion layer that is not covered by the first transparent electrode layer by an inductively coupled plasma method using a gas containing O2 gas, thereby exposing the one or more common wiring connection portions.

[0019] (13) The photodetection device of the present invention includes a lower structure, one or more common wiring connections and one or more pixel electrodes provided on the lower structure, an organic photoelectric conversion layer overlapping the one or more pixel electrodes but not overlapping the one or more common wiring connections, and a transparent electrode layer overlapping the organic photoelectric conversion layer and also overlapping the one or more common wiring connections, wherein a portion of the transparent electrode layer overlapping the one or more pixel electrodes is thicker than other portions.

[0020] (14) In the photodetector described in (13) above, the transparent electrode layer includes a first transparent electrode layer provided on the organic photoelectric conversion layer so as to overlap the one or more pixel electrodes and not overlap the one or more common wiring connection portions, and a second transparent electrode layer provided so as to overlap the first transparent electrode layer and also overlap the one or more common wiring connection portions. [Brief description of the drawings]

[0021] [Figure 1] 1 is a block diagram showing an outline of a substrate configuration of a photodetector according to a first embodiment of the present invention. [Diagram 2] 1 is a block diagram showing an outline of a circuit configuration of a photodetector according to a first embodiment of the present invention. [Diagram 3] 3 is a cross-sectional view of the light detection device corresponding to the line III-III in FIG. 1. [Figure 4A] 2A to 2C are cross-sectional views illustrating a method for manufacturing the photodetector according to the first embodiment of the present invention. [Figure 4B] 4B is a cross-sectional view showing a step subsequent to the step shown in FIG. 4A. [Figure 4C] 4C is a cross-sectional view showing a step subsequent to the step shown in FIG. 4B. [Figure 4D] 4D is a cross-sectional view showing a step subsequent to the step shown in FIG. 4C. [Figure 4E] FIG. 4E is a cross-sectional view showing a step subsequent to the step shown in FIG. 4D. [Figure 4F] 4F is a cross-sectional view showing a step subsequent to the step shown in FIG. 4E. [Diagram 5] 4 is a table showing an example of etching conditions when forming an OPD layer according to the first embodiment of the present invention. [Figure 6] 5A to 5C are schematic diagrams illustrating a method for manufacturing a photodetector according to a second embodiment of the present invention. [Figure 7] FIG. 7 is a schematic diagram showing a step subsequent to the step shown in FIG. [Figure 8] 5A to 5C are schematic diagrams illustrating a method for manufacturing a photodetector according to a third embodiment of the present invention. [Figure 9] 9 is a schematic diagram showing a step subsequent to the step shown in FIG. 8. [Figure 10] 10A to 10C are schematic diagrams illustrating a method for manufacturing a photodetector according to a fourth embodiment of the present invention. [Figure 11] 10A to 10C are schematic diagrams illustrating a method for manufacturing a photodetector according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and the present invention should not be interpreted as being limited to the description of the embodiments exemplified below.

[0023] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those explained in the previous drawings may be given the same reference numerals, and duplicate explanations may be omitted.

[0024] Furthermore, in the embodiments, when specifying the positional relationship between a certain component and another component, "above" and "below" do not only mean being located directly above or directly below a certain component, but also include cases where there is another component interposed between them, unless otherwise specified.

[0025] Fig. 1 is a block diagram showing an outline of a substrate configuration of a photodetector according to embodiment 1. As shown in Fig. 1, the photodetector 1 has a substrate 110, a sensor unit 10, a gate line driving circuit 20, a signal line selection circuit 21, a detection circuit 24, a control circuit 26, and a power supply circuit 28.

[0026] A control board 600 is electrically connected to the board 110 via a flexible printed circuit board 500. The flexible printed circuit board 500 is provided with a detection circuit 24. The control board 600 is provided with a control circuit 26 and a power supply circuit 28. The control circuit 26 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 26 supplies control signals to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21 to control the detection operation of the sensor unit 10. The power supply circuit 28 supplies a power supply voltage to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21.

[0027] The light detection device 1 has a detection area DA and a frame area PA. The detection area DA is an area where the sensor unit 10 is provided. The frame area PA is an area outside the detection area DA, and is an area where the sensor unit 10 is not provided. In other words, the frame area PA is an area between an edge of the detection area DA and an edge of the substrate 110.

[0028] The sensor unit 10 includes a plurality of pixels PX and receives light from a detection object. The plurality of pixels PX are arranged in a matrix in the detection area DA. The plurality of pixels PX include a light detection sensor that is a photodiode, and output an electric signal according to the light irradiated thereto. Each pixel PX outputs an electric signal according to the light irradiated thereto as a detection signal Vdet to the signal line selection circuit 21. The light detection device 1 may detect information about a living body, such as a blood vessel image of a finger or a palm, a pulse wave, a pulse, and blood oxygen saturation, based on the detection signal Vdet from each pixel PX. In addition, each pixel PX performs detection according to a gate drive signal Vgcl supplied from a gate line drive circuit 20.

[0029] The gate line driving circuit 20 and the signal line selection circuit 21 are provided in the frame region PA. Specifically, as shown in Fig. 1, the gate line driving circuit 20 is provided in a region of the frame region PA extending in the extension direction of the signal lines SGL. The signal line selection circuit 21 is provided in a region of the frame region PA extending in the extension direction of the gate lines GCL, and is provided in a region on the lower side of the substrate 110.

[0030] Fig. 2 is a block diagram showing an outline of the circuit configuration of the photodetector according to embodiment 1. As shown in Fig. 2, the photodetector 1 has a detection control unit 30 and a detection unit 40. A part or all of the functions of the detection control unit 30 are included in a control circuit 26. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 24 are included in the control circuit 26.

[0031] The detection control unit 30 is a circuit that supplies control signals to the gate line driving circuit 20, the signal line selection circuit 21, and the detection unit 40, respectively, and controls their operations. The detection control unit 30 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST, to the gate line driving circuit 20. The detection control unit 30 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 21. The gate line driving circuit 20 is a circuit that drives the gate lines GCL based on the various control signals. The gate line driving circuit 20 sequentially or simultaneously selects a plurality of gate lines GCL, and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 20 selects the pixels PX connected to the gate lines GCL. The signal line selection circuit 21 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL. The signal line selection circuit 21 is, for example, a multiplexer. The signal line selection circuit 21 connects the selected signal line SGL to the detection circuit 24 based on the selection signal ASW supplied from the detection control unit 30. As a result, the signal line selection circuit 21 outputs the detection signal Vdet of the pixel PX to the detection unit 40.

[0032] The detection unit 40 includes a detection circuit 24, a signal processing unit 44, a storage unit 45, a coordinate extraction unit 46, and a detection timing control unit 47. Based on a control signal supplied from the detection control unit 30, the detection timing control unit 47 controls the detection circuit 24, the signal processing unit 44, and the coordinate extraction unit 46 to operate in synchronization with each other.

[0033] The detection circuit 24 is, for example, an analog front-end circuit (AFE). The detection circuit 24 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal. The signal processor 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 24. When a detection target such as a finger or palm comes into contact with or close to the detection surface, the signal processor 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 24. In addition, the signal processor 44 can detect information about a living body such as a blood vessel image, pulse wave, pulse, and blood oxygen saturation of the finger or palm based on the signal from the detection circuit 24. The memory unit 45 temporarily stores the signal calculated by the signal processor 44. The memory unit 45 may be, for example, a RAM (Random Access Memory), a register circuit, or the like. The coordinate extraction unit 46 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger, palm, etc. when the contact or proximity of the finger, palm, etc. is detected by the signal processing unit 44. The coordinate extraction unit 46 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger, palm, etc. The coordinate extraction unit 46 combines the detection signals Vdet output from each pixel PX of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger, palm, etc. Note that the coordinate extraction unit 46 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0034] Next, the substrate 110 will be described in detail with reference to Fig. 3. Fig. 3 is a cross-sectional view corresponding to the III-III cutting line in Fig. 1. Fig. 3 shows the vicinity of the end of the detection area DA and the entire frame area PA. In Fig. 3, hatching of some layers is omitted to make the cross-sectional structure easier to see.

[0035] As shown in FIG. 3, the photodetector 1 has a lower structure 100 including a thin film transistor TFT, an OPD layer 200 provided on the lower structure 100, a sealing structure 300 provided on the OPD layer 200, and a common wiring connection portion 400.

[0036] The lower structure 100 has a substrate 110 and a barrier inorganic layer 120 provided on the substrate 110. The substrate 110 may have a two-layer structure, for example, a glass substrate and a resin substrate provided thereon. The resin substrate may be made of, for example, polyimide. However, the present invention is not limited to this, and the substrate 110 may not have a glass substrate and may be made of only a flexible resin substrate. The barrier inorganic layer 120 may have a laminated structure made of multiple layers. The lower structure 100 may have an additional layer 125 in accordance with the location where the thin film transistor TFT is to be formed.

[0037] The thin film transistor TFT has a semiconductor layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134. A gate insulating layer 140 is provided between the semiconductor layer 131 and the gate electrode 132. A silicon oxide layer is preferably used as the gate insulating layer 140. An interlayer insulating layer 150 is formed on the gate electrode 132. The interlayer insulating layer 150 is preferably structured such that a silicon nitride layer and a silicon oxide layer are stacked.

[0038] A planarization layer 160 is formed on the interlayer insulating layer 150. The planarization layer 160 may be made of a resin such as photosensitive acrylic having excellent surface planarity. The planarization layer 160 may be removed in a portion that electrically connects the OPD layer 200 and the lower structure 100. The planarization layer 160 may be partially removed in the frame region PA to form a bank. By forming the bank, the resin material constituting the sealing structure 300 can be blocked and prevented from leaking out of the frame region PA.

[0039] An insulating layer 170 may be provided on the planarizing layer 160. Furthermore, an inorganic insulating layer 180 made of an inorganic material may be provided on the insulating layer 170 in the detection area DA. Such an inorganic insulating layer 180 may be called a rib, a partition wall, a bank, or the like. The inorganic insulating layer 180 is an inorganic insulating layer formed of, for example, silicon nitride. The inorganic insulating layer 180 may also be provided on the pixel electrode 210 so as to expose the pixel electrode 210 included in the OPD layer 200.

[0040] The OPD layer 200 is a layer in which the array of pixels PX shown in Fig. 1 is formed. The OPD layer 200 is composed of pixel electrodes 210 provided on the insulating layer 170, an organic photoelectric conversion layer 220 continuously covering the multiple pixel electrodes 210, and a transparent electrode layer 230 provided on the organic photoelectric conversion layer 220. The transparent electrode layer 230 has a first transparent electrode layer 231 provided on the organic photoelectric conversion layer 220, and a second transparent electrode layer 232 provided on the first transparent electrode layer 231.

[0041] The pixel electrodes 210 are formed corresponding to each pixel PX, and are electrically connected to the drain electrodes 134 of the lower structure 100. The organic photoelectric conversion layer 220 is a layer that functions as a photoelectric conversion layer. In the first embodiment, the organic photoelectric conversion layer 220 is formed continuously on all the pixel electrodes 210 in the detection area DA. "Continuously" means continuing without interruption, and the organic photoelectric conversion layer 220 is formed without interruption on all the pixel electrodes 210 in the detection area DA.

[0042] The transparent electrode layer 230 may be called an upper electrode or a common electrode. The first transparent electrode layer 231 and the second transparent electrode layer 232 are common electrodes provided so as to overlap all the pixels PX of the detection area DA. The second transparent electrode layer 232 is formed continuously on a common wiring connection unit 400 (described later) and the first transparent electrode layer 231. The first transparent electrode layer 231 and the second transparent electrode layer 232 may be formed of an indium-based oxide. Among the indium-based oxides, they may be formed of indium zinc oxide (IZO).

[0043] The first transparent electrode layer 231 and the second transparent electrode layer 232 may be formed of different materials as long as they are transparent and conductive. The first transparent electrode layer 231 and the second transparent electrode layer 232 may be formed of the same material. The transparent electrode layer 230 has a thicker film thickness than the other parts because the first transparent electrode layer 231 is formed in the part that overlaps the multiple pixel electrodes 210. The part that overlaps with all the pixel electrodes 210 in the detection area DA is thicker by the first transparent electrode layer 231 than the part that overlaps with the bank part and the common wiring connection part 400. The transparent electrode layer 230 that covers the side surface of the OPD layer 200 is thinner than the transparent electrode layer in the part that overlaps with the multiple pixel electrodes 210 because the first transparent electrode layer 231 is not formed.

[0044] The sealing structure 300 has a first inorganic layer 310 provided on a transparent electrode layer 230, a resin layer 320 which is a resin layer provided on the first inorganic layer 310, and a second inorganic layer 330 provided on the resin layer 320. The resin layer 320 is preferably made of a material with high transmittance and low moisture permeability.

[0045] Ends of the first inorganic layer 310, the resin layer 320, and the second inorganic layer 330 are located in the frame region PA. In particular, the end of the second inorganic layer 330 is located near the edge of the substrate 110. Furthermore, the second inorganic layer 330 is in contact with the first inorganic layer 310 in the frame region PA. In this manner, in the sealing structure 300, the multiple layers made of inorganic materials prevent moisture from entering the organic photoelectric conversion layer 220 from the outside.

[0046] The common wiring connection part 400 is provided on the interlayer insulating layer 150 in the frame area PA, and is connected to the common wiring 410. The common wiring 410 supplies a common voltage to the transparent electrode layer 230 via the common wiring connection part 400. Therefore, the common wiring connection part 400 and the transparent electrode layer 230 need to be electrically connected. The second transparent electrode layer 232 is formed continuously on the plurality of pixel electrodes 210 and the common wiring connection part 400, so that the first transparent electrode layer 231 and the common wiring connection part 400 are electrically connected. The wiring 420 is provided on the gate insulating layer 140.

[0047] Next, a method for manufacturing the substrate 110 according to the first embodiment will be described in detail with reference to the drawings. FIGS. 4A to 4F are diagrams showing a method for manufacturing the substrate 110 according to the first embodiment of the present invention. A cross-sectional view corresponding to the III-III cutting line in FIG. 1 is used as an example. FIG. 5 is a table showing an example of etching conditions when forming the OPD layer 200 according to the first embodiment. Reactive ion etching (RIE) or inductively coupled plasma (ICP) can be used for the dry etching in the first embodiment. In the following description, it is assumed that the ICP method is used under the conditions in FIG. 5.

[0048] 4A, the lower structure 100, the common wiring connection portion 400, the common wiring 410, and the wiring 420 are formed on the substrate 110. The lower structure 100 is formed by repeating a general photolithography process multiple times, and since various techniques are well known, detailed explanations thereof will be omitted in this specification.

[0049] Next, a plurality of pixel electrodes 210 are formed on the lower structure 100 in the detection region DA. After that, an inorganic insulating layer 180 is formed to serve as a separating wall between the pixel electrodes 210. This formation may also be performed by a general lithography method. Next, an organic photoelectric conversion layer 220 is formed in the detection region DA and the frame region PA. For example, the organic photoelectric conversion layer 220 may be formed by coating using a slit coater.

[0050] Thereafter, the first transparent electrode layer 231 is formed on the organic photoelectric conversion layer 220 in the detection area DA and the frame area PA. Then, a resist 700 is formed on the first transparent electrode layer in the detection area DA and the frame area PA.

[0051] A mask 800 is formed so as to overlap all the pixel electrodes 210 in the detection area DA, but not to overlap the common wiring connection portion 400. This formation may also be performed by a general lithography method.

[0052] Next, as shown in FIG. 4B, a mask 800 is used to pattern the resist 700 so as to overlap all the pixel electrodes 210 in the detection region DA but not to overlap the common wiring connection portion 400.

[0053] Next, as shown in Fig. 4C, the portion of the first transparent electrode layer 231 that is not covered with the resist 700 is removed by an ICP method including CH4 gas. In dry etching using CH4 gas, the resist 700 and the organic photoelectric conversion layer 220 are hardly etched. Therefore, after the dry etching, the organic photoelectric conversion layer 220 in the portion overlapping with the common wiring connection portion 400 is exposed.

[0054] Next, as shown in Fig. 4D, the resist 700 and the organic photoelectric conversion layer 220 are removed by an ICP method including O2 gas, whereby inorganic insulating materials such as SiOx, SiNx, and AlOx and metal oxide films such as indium oxide are hardly etched in dry etching using O2 gas, so that the insulating layer 170 and the common wiring connection portion 400 are hardly etched. Through this process, the first transparent electrode layer 231 is formed so as to overlap all the pixel electrodes 210 and not overlap the common wiring connection portion 400.

[0055] 4E, the second transparent electrode layer 232 is formed in the detection area DA and the frame area PA. After that, a resist 702 is continuously formed so as to cover all the pixel electrodes 210 and the common wiring connection portion 400 in the detection area DA. The formation of the resist 702 may also be performed by a general lithography method.

[0056] Next, as shown in Fig. 4F, the portion of the second transparent electrode layer 232 that is not covered with the resist 702 is removed by an ICP method including CH4 gas. Then, the resist 702 is removed. This process makes it possible to form the second transparent electrode layer 232 that overlaps all of the pixel electrodes 210 and also overlaps the common wiring connection portion 400.

[0057] Since the first transparent electrode layer 231 is made of a transparent and conductive material, even if it is not removed and is left on the organic photoelectric conversion layer 220, deterioration of the characteristics of the sensor unit 10 can be reduced. Furthermore, by using the first transparent electrode layer 231 as a protective layer, the process of removing a protective mask for etching the organic photoelectric conversion layer 220 can be reduced.

[0058] On the other hand, the first transparent electrode layer 231 may be removed before forming the second transparent electrode layer 232. When the first transparent electrode layer 231 is removed, the second transparent electrode layer 232 is formed continuously so as to overlap the organic photoelectric conversion layer 220 instead of the first transparent electrode layer 231 and also overlap the common wiring connection part 400. Even if a film remains on the organic photoelectric conversion layer 220 when the first transparent electrode layer 231 is removed, the first transparent electrode layer 231 is transparent and conductive, so that deterioration of the characteristics of the sensor unit 10 can be suppressed as much as possible.

[0059] Next, a method for manufacturing the photodetector 1 according to embodiment 2 will be described with reference to Fig. 6 and Fig. 7. Fig. 6 and Fig. 7 are schematic diagrams showing the manufacturing method of embodiment 2. The lower structure 100 below the inorganic insulating layer 180 in Fig. 3 is omitted (the same applies to Figs. 8 to 11 described later).

[0060] Moreover, the second embodiment differs from the first embodiment in that the pixel electrode 210 and the common wiring connection portion 400 are provided in the same layer, and the end of the common wiring connection portion 400 is covered with the inorganic insulating layer 180 (similar to the third to fifth embodiments). When providing the common wiring connection portion 400 of the first embodiment, the common wiring connection portion 400 may be provided in the same layer as the pixel electrode 210 as in the second embodiment. Furthermore, in the first embodiment, the structure of the common wiring connection portion 400 of the second embodiment may be provided at the connection portion with the common wiring 410. Also, in the second embodiment, the common wiring connection portion 400 covered with the insulating layer 170 as in the first embodiment may be provided.

[0061] As in FIG. 4A, a plurality of pixel electrodes 210 and one common wiring connection portion 400 are formed on the substrate 110. For convenience of explanation, one of the plurality of pixel electrodes 210 is called pixel electrode 210a, and the other is called pixel electrode 210b. As shown in the upper left of FIG. 6, an organic photoelectric conversion layer 220 is continuously formed on the entire surface of the substrate on the pixel electrodes 210a, 210b, and one common wiring connection portion 400. Next, a first transparent electrode layer 231 is formed on the organic photoelectric conversion layer 220. Furthermore, a resist 700 is formed on the first transparent electrode layer 231. Then, a mask 800 is individually formed on the resist 700 so as to overlap the pixel electrodes 210a and 210b, respectively.

[0062] 6, the resist 700 is patterned using a mask 800. Since the mask 800 is formed so as to overlap the pixel electrodes 210a and 210b, the resist 700 is also formed so as to overlap the pixel electrodes 210a and 210b.

[0063] 6, the portions of the first transparent electrode layer 231 that are not covered with the resist 700 are removed by an ICP method including CH4 gas. This process separates the first transparent electrode layer 231 into a first individual transparent electrode 231a overlapping the pixel electrode 210a and a first individual transparent electrode 231b overlapping the pixel electrode 210b. The first transparent electrode layer 231 is formed so as to overlap each of the multiple pixel electrodes 210 individually and not to overlap the common wiring connection portion 400.

[0064] Next, as shown in the lower right of FIG. 6, the resist 700 and the organic photoelectric conversion layer 220 in the portion not covered by the first individual transparent electrode 231a and the first individual transparent electrode 231b are removed by an ICP method including O2 gas. This process separates the organic photoelectric conversion layer 220 into the organic photoelectric conversion layer 220a overlapping the pixel electrode 210a and the organic photoelectric conversion layer 220b overlapping the pixel electrode 210b. This is because the organic photoelectric conversion layer 220 on each pixel electrode 210 is protected by the first transparent electrode layer that is not etched by O2 gas. The organic photoelectric conversion layer 220 in the portion not covered by the first transparent electrode layer 231 is removed, and the inorganic insulating layer 180 and the common wiring connection portion 400 between the pixel electrode 210a and the pixel electrode 210b are exposed.

[0065] 7, the second transparent electrode layer 232 is formed on the entire surface of the substrate. After that, a resist 702 is formed continuously to cover the pixel electrodes 210a, 210b, and the common wiring connection portion 400.

[0066] 7, a portion of the second transparent electrode layer 232 that is not covered with the resist 702 is removed by an ICP method including CH4 gas. Thereafter, the resist 702 is removed. This process makes it possible to form the second transparent electrode layer 232 that is continuously overlapped on the pixel electrode 210a, the pixel electrode 210b, and the common wiring connection portion 400. The first individual transparent electrode 231a and the second transparent electrode layer 232 in the pixel electrode 210a, and the first individual transparent electrode 231b and the second transparent electrode layer 232 in the pixel electrode 210b function as the upper electrode of the OPD layer 200.

[0067] The second embodiment differs from the first embodiment in that the organic photoelectric conversion layer 220 is formed so as to overlap with each pixel electrode 210. By forming the organic photoelectric conversion layer 220 individually on each of the plurality of pixel electrodes 210 in this manner, the leakage current between the pixel electrodes 210 can be suppressed.

[0068] Next, a method for manufacturing the photodetector 1 according to the third embodiment will be described with reference to Fig. 8 and Fig. 9. Fig. 8 and Fig. 9 are schematic views showing the manufacturing method according to the third embodiment.

[0069] First, as shown in the upper left of FIG. 8, a pixel electrode 210a, a common wiring connection portion 400a, a pixel electrode 210b, and a common wiring connection portion 400b are formed on a substrate 110. One pixel electrode 210 and one common wiring connection portion 400 are formed adjacent to each other. Then, an organic photoelectric conversion layer 220 is continuously formed on the entire surface of the substrate 110. Next, a first transparent electrode layer 231 is formed on the organic photoelectric conversion layer 220. Furthermore, a resist 700 is formed on the first transparent electrode layer 231. Then, a mask 800 is individually formed on the resist 700 so as to overlap the pixel electrode 210a and the pixel electrode 210b, respectively.

[0070] 8, the resist 700 is patterned using a mask 800. Since the mask 800 is formed so as to overlap the pixel electrodes 210a and 210b, the resist 700 is also formed so as to overlap the pixel electrodes 210a and 210b.

[0071] Next, as shown in the lower left of FIG. 8, the portion of the first transparent electrode layer 231 that is not covered with the resist is removed by an ICP method including CH4 gas. Through this process, the first transparent electrode layer 231 is separated into a first individual transparent electrode 231a overlapping the pixel electrode 210a and a first individual transparent electrode 231b overlapping the pixel electrode 210b. The first transparent electrode layer 231 is formed so as to overlap each of the multiple pixel electrodes 210 individually and not overlap the common wiring connection portion 400. The first transparent electrode layer 231 is formed so as to overlap each of the multiple pixel electrodes 210 individually and not overlap the multiple common wiring connection portions 400.

[0072] Next, as shown in the lower right of FIG. 8, the resist 700 and the organic photoelectric conversion layer 220 in the portion not covered by the first individual transparent electrode 231a and the first individual transparent electrode 231b are removed by an ICP method including O2 gas. This process separates the organic photoelectric conversion layer 220 into the organic photoelectric conversion layer 220a overlapping the pixel electrode 210a and the organic photoelectric conversion layer 220b overlapping the pixel electrode 210b. This is because the organic photoelectric conversion layer 220 on each pixel electrode 210 is protected by the first transparent electrode layer 231, which is not etched by O2 gas. The organic photoelectric conversion layer 220 in the portion not covered by the first transparent electrode layer 231 is removed, and the inorganic insulating layer 180, the common wiring connection portion 400a, and the common wiring connection portion 400b between the pixel electrode 210a and the pixel electrode 210b are exposed.

[0073] 9, the second transparent electrode layer 232 is formed on the entire surface of the substrate. After that, a resist 702a covering the pixel electrode 210a and the common wiring connection portion 400a, and a resist 702b covering the pixel electrode 210b and the common wiring connection portion 400b are separately formed.

[0074] 9, a portion of the second transparent electrode layer 232 that is not covered with the resist 702 is removed by ICP using CH4 gas. Thereafter, the resist 702 is removed. This process separates the second transparent electrode layer 232 into a second individual transparent electrode 232a on the first individual transparent electrode 231a and a second individual transparent electrode 232b on the first individual transparent electrode 231b. The first individual transparent electrode 231a and the second individual transparent electrode 232a in the pixel electrode 210a, and the first individual transparent electrode 231b and the second individual transparent electrode 232b in the pixel electrode 210b function as a common electrode of the OPD layer 200.

[0075] The third embodiment differs from the second embodiment in that one pixel electrode 210 and one common wiring connection portion 400 are formed adjacent to each other, and a second transparent electrode layer 232 is formed individually so as to overlap one pixel electrode 210 and one common wiring connection portion 400. By forming one common wiring connection portion 400 adjacent to one pixel electrode 210, the same potential can be stably supplied to the multiple pixel electrodes 210.

[0076] Next, a manufacturing method of the photodetector 1 according to the fourth embodiment will be described with reference to Fig. 10. Fig. 10 is a schematic diagram showing the manufacturing method of the fourth embodiment. The manufacturing method of the fourth embodiment is similar to that of Fig. 6 of the second embodiment up to the step of forming the first transparent electrode layer 231. For ease of explanation, one of the multiple pixel electrodes 210 is referred to as pixel electrode 210a, and the other is referred to as pixel electrode 210b.

[0077] In the fourth embodiment, the method further includes a step of forming a rib 182 covering the side surfaces of the organic photoelectric conversion layer 220 and the first transparent electrode layer 231 after removing the resist 700 and the portion of the organic photoelectric conversion layer 220 that is not covered by the first transparent electrode layer 231. After forming the first transparent electrode layer 231 (see the lower right side of FIG. 6), as shown in the upper left side of FIG. 10, the rib 182 is continuously formed of the same material as the inorganic insulating layer 181 on the inorganic insulating layer 181 corresponding to the inorganic insulating layer 180 in the lower right side of FIG. 6, the first individual transparent electrode 231a, the first individual transparent electrode 231b, and the common wiring connection portion 400. Next, a resist 704 is formed on both ends of each pixel electrode 210 and on the rib 182.

[0078] Next, as shown in the upper right of Fig. 10, the portion of the rib 182 that is not covered with the resist 704 is removed by an ICP method including CH4 gas. Thereafter, the resist 704 is removed. The portion of the rib 182 that is not covered with the resist 704 is removed, and the upper surface of the first transparent electrode layer 231 is exposed. By this process, the rib 182 that covers the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220 can be formed.

[0079] 10, a second transparent electrode layer 232 is formed on the entire surface of the substrate. After that, a resist 702 is formed continuously to cover the pixel electrodes 210a, 210b, and the common wiring connection portion 400.

[0080] 10, the portion of the second transparent electrode layer 232 that is not covered with the resist 702 is removed by an ICP method including CH4 gas. Then, the resist 702 is removed. This process makes it possible to form the second transparent electrode layer 232 that continuously overlaps the pixel electrodes 210a, 210b, and the common wiring connection portion 400 while providing the rib 182 that covers the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220.

[0081] The fourth embodiment differs from the second embodiment in that ribs 182 are formed on the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220. The ribs 182 made of an inorganic material are formed so as to cover the side surfaces of the organic photoelectric conversion layer 220, thereby making it possible to suppress leakage current from the side surfaces of the organic photoelectric conversion layer 220.

[0082] Next, a manufacturing method of the photodetector 1 according to the fifth embodiment will be described with reference to Fig. 11. Fig. 11 is a schematic diagram showing the manufacturing method of the fifth embodiment. The manufacturing method of the fifth embodiment is similar to that of Fig. 8 of the third embodiment up to the step of forming the first transparent electrode layer 231. The plurality of pixel electrodes 210 formed on the substrate 110 are referred to as the pixel electrode 210a and the pixel electrode 210, respectively. Also, the plurality of common wiring connection parts 400 formed on the substrate 110 are referred to as the common wiring connection part 400a and the common wiring connection part 400b, respectively.

[0083] In the fifth embodiment, the method further includes a step of forming a rib 182 covering the side surface of the organic photoelectric conversion layer 220 and the first transparent electrode layer 231 after removing the resist 700 and the portion of the organic photoelectric conversion layer 220 that is not covered by the first transparent electrode layer 231. After forming the first transparent electrode layer 231 (see the lower right side of FIG. 8), as shown in the upper left side of FIG. 11, the rib 182 is continuously formed of the same material as the inorganic insulating layer 181 on the inorganic insulating layer 181 corresponding to the inorganic insulating layer 180 in the lower right side of FIG. 8, the first individual transparent electrode 231a, the first individual transparent electrode 231b, the common wiring connection portion 400a, and the common wiring connection portion 400b. Next, a resist 704 is formed on both ends of each pixel electrode 210 and on the rib 182.

[0084] Next, as shown in the upper right of Fig. 11, the portion of the rib 182 that is not covered with the resist 704 is removed by an ICP method including CH4 gas. Thereafter, the resist 704 is removed. The portion of the rib 182 that is not covered with the resist 704 is removed, and the upper surface of the first transparent electrode layer 231 is exposed. By this process, the rib 182 that covers the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220 can be formed.

[0085] 11, a second transparent electrode layer 232 is formed on the entire surface of the substrate. After that, a resist 702a that covers the pixel electrode 210a and the common wiring connection portion 400a, and a resist 702b that covers the pixel electrode 210b and the common wiring connection portion 400b are separately formed.

[0086] 11, the portion of the second transparent electrode layer 232 that is not covered with the resist 702 is removed by an ICP method using CH4 gas. Thereafter, the resist 702 is removed. This process makes it possible to form the second individual transparent electrodes 232a and 232b individually while providing the ribs 182 that cover the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220.

[0087] The fifth embodiment differs from the third embodiment in that ribs 182 are formed on the side surfaces of the first transparent electrode layer 231 and the organic photoelectric conversion layer 220. The ribs 182 made of an inorganic material are formed so as to cover the side surfaces of the organic photoelectric conversion layer 220, thereby making it possible to suppress leakage current from the side surfaces of the organic photoelectric conversion layer 220.

[0088] The present invention is not limited to the above-described embodiment, and various modifications are possible. For example, the configurations described in the embodiments can be replaced with substantially the same configurations, configurations that provide the same effects, or configurations that can achieve the same purpose. [Explanation of symbols]

[0089] 1 Photodetector, 10 Sensor section, 20 Gate line driving circuit, 21 Signal line selection circuit, 24 Detection circuit, 26 Control circuit, 28 Power supply circuit, 30 Detection control section, 40 Detection section, 42 Detection signal amplification section, 43 A / D conversion section, 44 Signal processing section, 45 Memory section, 46 Coordinate extraction section, 47 Detection timing control section, 100 Lower structure, 110 Substrate, 120 Barrier inorganic layer, 125 Additional layer, 131 Semiconductor layer, 132 Gate electrode, 133 Source electrode, 134 Drain electrode, 140 Gate insulating layer, 150 Interlayer insulating layer, 160 Planarization layer, 170 Insulating layer, 180 Inorganic insulating layer, 181 Inorganic insulating layer, 182 Rib, 200 OPD layer, 210 Pixel electrode, 210a Pixel electrode, 210b Pixel electrode, 220 Organic photoelectric conversion layer, 220a organic photoelectric conversion layer, 220b organic photoelectric conversion layer, 230 transparent electrode layer, 231 first transparent electrode layer, 231a first individual transparent electrode, 231b first individual transparent electrode, 232 second transparent electrode layer, 232a second individual transparent electrode, 232b second individual transparent electrode, 300 sealing structure, 310 first inorganic layer, 320 resin layer, 330 second inorganic layer, 400 common wiring connection portion, 400a common wiring connection portion, 400b common wiring connection portion, 410 common wiring, 420 wiring, 500 flexible printed circuit board, 600 control board, 700 resist, 702 resist, 702a resist, 702b resist, 704 resist, 800 mask, DA detection area, PA frame area, PX pixel.

Claims

1. a substructure forming step of forming a substructure; forming one or more common wiring connections and one or more pixel electrodes on the underlying structure; an organic photoelectric conversion layer forming step of continuously forming an organic photoelectric conversion layer on the one or more common wiring connection parts and the one or more pixel electrodes; a first transparent electrode layer forming step of continuously forming a first transparent electrode layer on the one or more common wiring connection parts and the one or more pixel electrodes; a resist forming step of forming a resist on the first transparent electrode layer by patterning the resist so as to overlap the one or more pixel electrodes and not to overlap the one or more common wiring connection parts; a first transparent electrode layer etching step of removing a portion of the first transparent electrode layer that is not covered with the resist; an organic photoelectric conversion layer etching step of removing the resist and removing a portion of the organic photoelectric conversion layer that is not covered with the first transparent electrode layer to expose the one or more common wiring connection portions; a second transparent electrode layer forming step of continuously forming a second transparent electrode layer so as to overlap the organic photoelectric conversion layer or the first transparent electrode layer and also overlap the one or more common wiring connection portions; A method for manufacturing a light detection device comprising the steps of:

2. 2. The method of claim 1, The second transparent electrode layer forming step includes forming the second transparent electrode layer so as to overlap the first transparent electrode layer and also overlap the one or more common wiring connection portions. A manufacturing method comprising the steps of:

3. 2. The method of claim 1, The method further includes a first transparent electrode layer removing step of removing the first transparent electrode layer after the organic photoelectric conversion layer etching step, The second transparent electrode layer forming step forms the second transparent electrode layer so as to overlap the organic photoelectric conversion layer and also overlap the one or more common wiring connection portions. A manufacturing method comprising the steps of:

4. 2. The method of claim 1, The resist forming step includes forming the resist on the first transparent electrode layer so as to overlap each of the pixel electrodes. A manufacturing method comprising the steps of:

5. 5. The method of claim 4, The pixel electrode forming step includes forming two or more pixel electrodes and one common wiring connection portion; The second transparent electrode layer forming step includes forming the second transparent electrode layer so as to overlap the organic photoelectric conversion layer or the first transparent electrode layer and also overlap the one common wiring connection portion. A manufacturing method comprising the steps of:

6. 5. The method of claim 4, The pixel electrode forming step includes forming one of the pixel electrodes and one of the common wiring connection portions adjacent to each other, the second transparent electrode layer forming step is forming the second transparent electrode layer so as to overlap the one pixel electrode and also overlap the one common wiring connection portion; A manufacturing method comprising the steps of:

7. 5. The method of claim 4, The method further includes the steps of: forming a rib so as to cover a side surface of the organic photoelectric conversion layer after the organic photoelectric conversion layer etching step and before the second transparent electrode layer forming step. A manufacturing method comprising the steps of:

8. In the manufacturing method according to claims 1 to 3, The material of the first transparent electrode layer and the second transparent electrode layer is the same; A manufacturing method comprising the steps of:

9. In the manufacturing method according to claims 1 to 3, The first transparent electrode layer is made of an indium-based oxide. A manufacturing method comprising the steps of:

10. In the manufacturing method according to claims 1 to 3, The first transparent electrode layer is made of indium zinc oxide (IZO). A manufacturing method comprising the steps of:

11. 2. The method of claim 1, The first transparent electrode layer etching step removes a portion of the first transparent electrode layer that is not covered with the resist by an inductively coupled plasma method using a gas containing CH4. A manufacturing method comprising the steps of:

12. 2. The method of claim 1, The organic photoelectric conversion layer etching step includes removing the resist and removing a portion of the organic photoelectric conversion layer that is not covered with the first transparent electrode layer by an inductively coupled plasma method using a gas containing O2 gas, thereby exposing the one or more common wiring connection portions. A manufacturing method comprising the steps of:

13. The substructure and one or more common wiring connections and one or more pixel electrodes provided on the lower structure; an organic photoelectric conversion layer provided so as to overlap the one or more pixel electrodes and not to overlap the one or more common wiring connection portions; a transparent electrode layer provided so as to overlap the organic photoelectric conversion layer and also overlap the one or more common wiring connection portions; Including, A photodetector device, characterized in that a portion of the transparent electrode layer overlapping the one or more pixel electrodes is thicker than other portions.

14. 14. The light detection device according to claim 13, The transparent electrode layer is a first transparent electrode layer provided on the organic photoelectric conversion layer so as to overlap the one or more pixel electrodes and not to overlap the one or more common wiring connection portions; a second transparent electrode layer provided so as to overlap the first transparent electrode layer and also overlap the one or more common wiring connection portions; 1. A light detection device comprising:

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