Metal substrate and vapor deposition mask using the same

Abstract

To provide a vapor deposition mask capable of enhancing a uniformity of vapor deposition.SOLUTION: An embodiment of the invention relates to a mask structure applicable to a vapor deposition step of an organic light-emitting device, etc. The mask structure includes a first surface and a second surface that are orthogonal to the thickness direction of a metal plate and face each other, and a large number of unit holes that penetrates the first surface and the second surface, the unit hole having a first surface hole and a second surface hole communicating each other. A size deviation of the first surface hole or the second surface hole among the unit holes adjacent each other can be adjusted within 2-10% based on the size deviation between arbitrary unit holes. A center of the first surface hole and a center of the second surface hole are arranged in a position that does not coincide with each other based on a surface of the first surface.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a metal substrate that can be used in a deposition process for an organic light-emitting device, and This relates to a mask structure that has [Background technology]

[0002] In the manufacturing process of organic EL color displays made of organic EL light emitting devices, An organic layer made of a conductive material is formed by vacuum deposition, and the organic layer is patterned. In this method, a deposition mask having a plurality of holes for allowing the material to pass therethrough is used. In general, for the through holes that make up the mask for deposition, a photoresist film is used on the metal thin film. The photo-etching method involves exposing a pattern to light and then etching it. The film can be formed by electroforming, in which electroplating is performed using a solder paste and then peeled off.

[0003] Conventional deposition masks are usually realized as metal masks. is focused on accurately creating the open area for deposition. However, this method has limitations in terms of deposition efficiency and dead space. ) there is no significant benefit to be seen. Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention are devised to solve the above-mentioned problems, particularly in the case of adjacent By controlling the uniformity between the deposition unit homes, it is possible to prevent unevenness in OLED panels after deposition. To provide a deposition mask having a structure capable of preventing moire fringes.

[0005] According to another embodiment of the present invention, the first and second holes constituting the deposition unit platform are By displacing the deposition head off-center, deposition efficiency can be increased and deposition can be prevented. It is possible to minimize dead space and to deposit large areas. To provide a deposition mask capable of improving the uniformity of deposition even in the case of a thin film.

[0006] In particular, when etching metal substrates to manufacture them as evaporation masks, the screws that are generated It is possible to provide a metal substrate that can minimize the phenomenon of cracking. Based on this, a deposition mask having a number of deposition unit holes can be realized. In addition, the roughness of the unit hole of the deposition mask can be controlled to improve deposition efficiency. do. [Means for solving the problem]

[0007] As a means for solving the above-mentioned problems, in the embodiment of the present invention, a gold film having a thickness metal plate; the metal plate has a first surface and a second surface that are perpendicular to the thickness direction and opposed to each other; a first surface hole and a second surface hole penetrating the first surface and the second surface and communicating therebetween; The first surface hole or the second surface hole between the adjacent unit holes is Deposition where the hole size deviation is within 10% based on the size deviation between any unit holes To make masks available for use.

[0008] In another embodiment of the present invention, a metal plate having a thickness (t); The first surface and the second surface are perpendicular to the thickness direction and face each other. The second surface includes a plurality of unit holes each having a first surface hole and a second surface hole that are connected to each other. The center of the first surface hole and the center of the second surface hole are aligned with each other based on the surface of the first surface. To provide a deposition mask arranged at a position where the deposition mask does not coincide with the deposition mask.

[0009] In still another embodiment of the present invention, a base metal plate having a thickness; The metal plate has a first surface and a second surface that are perpendicular to the thickness direction and opposed to each other, A sample board of 30mm x 180mm (horizontal x vertical) was taken at any point on the base metal plate. 2 / 3 to 1 / 2 thickness of the above thickness for the inside, leaving 10 mm from both ends The sample substrate is placed on a horizontal target surface. In this case, the torsion index (Hr) of the sample substrate satisfies the following relationship: Make it possible. [Number 1] HR={(H1-Ha)2+(H2-Ha)2+(H3-Ha)2+(H4-Ha )2}1 / 2 [Number 2] Ha=(H1+H2+H3+H4) / 4

[0010] Ha is the distance (H1, H2, H3, H4) is defined as the average separation distance. In addition, the metal group that satisfies the tortuosity index (Hr) mentioned above is The plate is used to provide a deposition mask having a number of unit holes for deposition. Effect of the Invention

[0011] According to an embodiment of the present invention, the uniformity between adjacent deposition unit holes is adjusted to obtain O after deposition. It is effective in preventing unevenness and moire on LED panels, etc.

[0012] Further, according to another embodiment of the present invention, the first and second side holes constituting the deposition unit platform are By disposing the deposition head off-center, the deposition efficiency can be increased and deposition can be performed more efficiently. It is possible to minimize dead space and to perform large area deposition. There is also an advantage that the uniformity of deposition can be improved in the case of the target object.

[0013] According to an embodiment of the present invention, a metal substrate is etched to be manufactured using a deposition mask. In this case, it is possible to provide a metal substrate that can minimize the occurrence of a twisting phenomenon.

[0014] In particular, a metal substrate according to the embodiment of the present invention is used to form a multi-layer structure having a plurality of unit holes for deposition. When implementing a deposition mask for this purpose, the distortion phenomenon of the deposition mask itself can be significantly reduced. This also has the effect of maximizing the deposition uniformity and deposition efficiency.

[0015] Furthermore, according to another embodiment of the present invention, a metal substrate according to the above-described embodiment of the present invention is used. In order to realize a deposition mask having a number of deposition unit holes, the inner circumferential surface of the unit holes is preferably Control the surface roughness to improve deposition efficiency and uniformity. It also has the effect of being able to do so. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a conceptual diagram illustrating the operation of a deposition mask according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic cross-sectional view illustrating a recess of an evaporation mask according to an embodiment of the present invention. [Diagram 3] 3 is a plan view of a second surface of the deposition mask according to the embodiment of the present invention in the structure of FIG. 2. FIG. [Figure 4]3 is a plan view of a first surface of the deposition mask in the structure of FIG. 2. FIG. [Diagram 5] 5 is a plan view of the first surface hole and the second surface hole as viewed from the second surface in the structure of FIG. 4. FIG. [Figure 6] 3A to 3C are conceptual diagrams for explaining an embodiment of an arrangement method of the central axes of the first surface holes and the second surface holes according to an embodiment of the present invention. [Figure 7] FIG. 7 is a conceptual diagram for explaining a method for determining the center of a first surface hole in FIG. 6. [Figure 8] 3 is a conceptual diagram illustrating a cross-sectional structure of a deposition mask according to a third embodiment of the present invention including a number of unit holes as described above with reference to FIG. 2. FIG. [Figure 9] 13 is a conceptual diagram illustrating a cross-sectional structure of an evaporation mask according to another embodiment of the present invention; [Figure 10] FIG. 9 conceptually illustrates a unit hole in which a first surface hole and a second surface hole communicate with each other. [Figure 11] 11 is an image of a portion of a first surface where the first surface hole of FIG. 10 is realized. [Figure 12] FIG. 12 is an image for explaining the arithmetic mean roughness (Ra). [Figure 13] FIG. 13 is an image for explaining the 10-point average roughness (Rz). [Figure 14] 1 is an image for explaining the measurement and definition of straightness in the present invention. [Figure 15] 1 is an image for explaining the measurement and definition of straightness in the present invention. [Figure 16] 1 is an image for explaining the measurement and definition of straightness in the present invention. [Figure 17] 1 is a conceptual diagram for explaining features of a metal substrate according to an embodiment of the present invention. [Figure 18] 1 is a conceptual diagram for explaining features of a metal substrate according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] The configuration and operation of the present invention will be described in detail below with reference to the accompanying drawings. In the following description with reference to the accompanying drawings, the same components are represented by the same reference numerals regardless of the reference numerals. In the following description, the first, second, etc. are used as reference numerals. Although a term may be used to describe a variety of components, the components are defined by the term. The terms are not intended to be limiting. It is used for 1. First Example

[0018] FIG. 1 is a conceptual diagram illustrating the operation of a deposition mask according to an embodiment of the present invention, and FIG. 1 is a schematic cross-sectional view illustrating a recess of an evaporation mask according to an embodiment of the present invention;

[0019] Referring to FIG. 1 and FIG. 2, the deposition mask according to the embodiment of the present invention is A mask structure for forming a layer includes a deposition source (S; Suo rce) It is possible to realize a deposition target (T) on a substrate (G) such as glass. In this case, the deposition mask (M;100) has a structure having a number of unit holes. The unit platform has a first surface hole (110) and a second surface hole (112) having different widths. (130) may be embodied as an interconnected structure.

[0020] Specifically, the deposition mask 100 according to the embodiment of the present invention has the structure shown in FIG. Thus, the first surface and the second surface are opposed to each other and perpendicular to the thickness direction. a first surface hole penetrating the first surface and the second surface and communicating therebetween; The substrate is made up of a number of unit holes each having a first surface hole (110) and a second surface hole (130). In this case, the first surface hole (110) and the second surface hole (130) are in communication with each other at a boundary portion ( 120) are shared and communicated. Such a unit hole is realized in a structure in which a large number of unit holes are provided. In particular, in the embodiment of the present invention, the first surface hole or the second surface hole between the adjacent unit holes may be The size deviation of the two holes is realized within 10% based on the deviation between any unit holes. In other words, at any point, the first or second surface hole of one unit hole is used as the reference. The deviation of the size of the first or second surface holes of adjacent unit holes is within 1% to 10%. In this way, the adjacent holes can be made larger or smaller. The deviation of the size of the balls is preferably within the range of 2% to 8%. can.

[0021] In this case, the size deviation between adjacent unit holes is The second surface holes can be compared based on the difference in diameter between adjacent holes. do.

[0022] That is, FIG. 3 is a plan view of the second surface of the deposition mask according to the embodiment of the present invention in the structure of FIG. FIG. 4 is a plan view of a first surface of a deposition mask in the structure of FIG. 2. be.

[0023] Referring to FIG. 3, a number of unit holes are formed on the second surface. Measure the vertical diameter (Cy) and horizontal diameter (Cx) of the 'reference hole'. In this case, each hole between the reference hole and adjacent holes (total of six in the illustrated drawing) The deviation between the vertical diameters (Cy) should be within 10%.

[0024] In addition, the deviation of the horizontal diameter (Cx) between the reference hole and other adjacent holes is also 10 %. In other words, the size deviation between adjacent holes of one reference hole is within If the difference is within 10%, the deposition uniformity can be ensured. The advantage of this is that the reference hole and the adjacent hole can improve the deposition uniformity. The deviation in size between holes is within 10%, and the vertical deviation between the reference hole and other adjacent holes is within 10%. The deviation of the diameter in the vertical direction (Cx) and the diameter in the horizontal direction (Cx) is preferably within 1% to 10%, If the thickness is within 2% to 8%, the deposition uniformity will be improved. If all the holes are the same size, there will be no moire in the OLED panel after deposition. The occurrence rate of rie has increased, and the size deviation between adjacent holes is If it is realized to the extent that it exceeds 10% based on the standard, the color of the OLED panel after deposition will be The incidence of unevenness increases.

[0025] This rule also applies to the first surface hole formed on the first surface of the metal plate in FIG. The vertical diameter (By) and horizontal diameter (Bx) of the first surface hole that serves as the reference The deviation rate of the diameter ratio between adjacent holes should be within 10%. More preferably, the deviation in size is within 1% to 10%. The size deviation of adjacent holes can be reduced. Preferably, the range is 2% to 8%.

[0026] In the embodiment of the present invention, the size deviation between the reference hole and the adjacent holes is It is possible to realize this within ±3μm.

[0027] For example, in FIG. 3, the vertical diameter (Cy) of the reference hole is 36 μm, and the adjacent holes If the diameter of the hole is 33μm or 39μm and the deviation is ±3μm, The deviation rate of the diameter is 8.3%, and the size of the adjacent holes and the reference hole are compared based on the reference hole. The thickness deviation is within 10%, which increases deposition efficiency.

[0028] As another example, in Figure 3, if the horizontal diameter (Cx) of the reference hole is 125 μm, When the diameter of the adjacent holes is 122μm or 128μm, the reference hole is directly compared. The deviation rate of the diameter is 2.4%, and the size of the adjacent holes and the reference hole are the same. The thickness deviation is within 10%, which increases deposition efficiency.

[0029] FIG. 5 shows the first surface hole (110) and the second surface hole (130) in the structure of FIG. 4 as viewed from the second surface. When calculating the size deviation between the holes, any of the outer peripheral surfaces of the holes is When considering the protrusion, the width of the protrusion protruding toward the center from the outer peripheral surface of the second surface hole (Y1) or It is preferable that the maximum value of the height (X1) is 20 μm or less. Such protrusions are defective structures that inevitably occur during deposition. By realizing such protrusions in the range of 20 μm or less, the uniformity of deposition can be ensured. In particular, in the embodiment of the present invention, the protruding projections are set to 11 μm or less. This will enable the device to be realized with a thickness of 6μm or less. 2. Second Example

[0030] Hereinafter, the deposition mask according to another embodiment of the present invention described with reference to FIGS. The structure will be explained.

[0031] FIG. 6 illustrates an embodiment of a method for arranging the central axes of the first surface hole and the second surface hole according to an embodiment of the present invention. This is a conceptual diagram for

[0032] The structure of the second embodiment can also have the features of the first embodiment described above. However, in the following description, the characteristic structure of the second embodiment will be described separately. The following description will be given taking as an example the embodiment of the present invention.

[0033] The deposition mask according to the second embodiment has a thickness as shown in FIG. 2 and FIG. The metal plate has a first surface and a second surface penetrating the first surface and communicating therebetween. The second embodiment is similar to the first embodiment in that it has a structure including a large number of unit holes having a hole and a second surface hole. The structure is the same.

[0034] However, the center (F) of the first surface hole (110) and the center (E) of the second surface hole (130) are arranged at positions that do not coincide with each other based on the surface of the first surface. That is, the centers of the first surface hole and the second surface hole are arranged so as to be shifted from each other so as not to coincide with each other. do.

[0035] As in the second embodiment of the present invention, the centers of the first and second surface holes are not aligned with each other. When the deposition is performed in a uniform manner, it has the advantage of ensuring high deposition uniformity. is realized.

[0036] As shown in FIG. 6, this is a deposition mask having a number of unit holes and a spaced Considering the radiation angle emitted from the deposition source (S), the deposition source and the unit hole are Since the corresponding positions are all different, it becomes difficult to deliver the deposition material uniformly. Therefore, in the present invention, in order to improve the uniformity of deposition, the second surface is provided for each hole. The central axis of the hole and the first surface hole are offset from each other, and the entire surface of the large-area substrate is It is possible to realize uniform transfer of deposition material even during the deposition process, and to achieve uniform deposition. Furthermore, when the deposition thickness needs to be increased, this Such a structure allows for efficient control of deposition thickness over localized areas or over the entire surface of the deposition target. Make sure that.

[0037] Such an arrangement structure in which the center of the first surface hole and the center of the second surface hole do not coincide with each other is A virtual vertical line perpendicular to the first or second surface of the metal plate is placed at the center of the hole on the first surface. If you stand it on the center of the hole on the second surface, this vertical line will be either of the two centers. In other words, the central axis of the first surface hole or the second surface hole is mutually are positioned offset from each other.

[0038] In addition, the center of the first surface hole and the center of the second surface hole defined in the second embodiment of the present invention are If the outer circumference of the hole and the second surface hole is a circle or an ellipse, the center is In the case of shape, it means the center of gravity.

[0039] Alternatively, as shown in Figure 6, the corners may have a rounded curvature structure. When doing so, if it is possible to determine the center of gravity of the surface hole, the center of gravity shall be used as the center.

[0040] Furthermore, the outer corners of the face holes are rounded (in the embodiment of the present invention, the attached In the case of an edge part with a curvature, the attachment is treated as a corner, and in the case of an edge part with a curvature, the 'curvature' is connected. The corner is defined as the area where the curvature is smaller than the curvature of the periphery. If there are n corners with a ratio, if n is an even number, draw a line between the opposite corners and the number of lines drawn. If the number is "K", and the number of lines (K) is 3, then the points where the three lines meet, K is 2 If it is a single line, draw a circle centered on the point where the two lines intersect and use the center of this circle as the center of the surface hole.

[0041] Or, if the number of corners, n, is odd, draw a line on the edge opposite the corner, and call the number of lines "k". Then, until the number of lines (k) becomes 3 or 2, The point where the straight lines meet is the center of the face hole.

[0042] For example, FIG. 7 is a diagram illustrating a method for determining the center (F) of the first surface hole (110) in FIG. Since there are a total of four rounded corners (an even number), the curvature of Draw straight lines (b1, b2) at the center points of the other corners located in the opposite direction from the center point. The number of lines (K) is two, and the point where these two lines meet is the center of the hole on the first surface (F). .

[0043] Furthermore, the center (E) of the second surface hole (130) is also determined in the same manner, and each of these centers ( E, F) are arranged to be offset from each other. As shown in Fig. 1, the distance (d) between the center of the first surface hole (F) and the center of the second surface hole (E) is The diameter (A) of the second surface hole is 90% or less, i.e., 0.9A or less. This can be done.

[0044] Furthermore, the distance (d) between the center (F) of the first surface hole and the center (E) of the second surface hole is Within this range, preferably, the length (A) is 50% or less of the diameter of the second surface hole, and more preferably, Must be 0.1% to 10% or less, 0.2% to 8% or less, or 0.2% to 5% or less. The degree of deviation of the distance between the central axes is the length (A) of the diameter of the second surface hole. If it is realized in the range of 90% or less, the uniformity of deposition efficiency can be further improved. To do so.

[0045] For example, when the diameter (A) of the second surface hole is 125 μm, The distance (d) between the center (F) and the center (E) of the second surface hole is embodied to be 112.5 μm or less. It is possible.

[0046] As mentioned above, in the deposition process using a deposition mask, the deposition source Since all the unit holes of the mask cannot be arranged vertically downward, the OLED In order to improve the deposition uniformity for each unit hole, The angle, back height, etc. will be required.

[0047] In this case, when the deposition mask according to the embodiment of the present invention is applied, the first surface hole and the second surface The hole placement position can be shifted (Miss Match) to increase deposition efficiency. Furthermore, this arrangement structure can reduce the dead space (D The lead space can be reduced, and the deposition thickness can be increased or a thick material can be applied to the deposition. It can be highly applicable even when OLED deposition equipment is used for large-area deposition. In this case, the second embodiment of the present invention is suitable for the purpose of preventing the occurrence of the problem of increased tensile force. The placement positions of the first and second surface holes are shifted (Miss Match) When using the pattern of unit holes to be implemented, it is necessary to distribute such tensile forces evenly. This allows for the uniformity of OLED deposition to be ensured. To make it possible. 3. Third Example

[0048] The structure of yet another embodiment of the present invention as described above will now be described.

[0049] In the third embodiment, the features of the deposition mask described in the first and third embodiments are the same as those described in the first and third embodiments. However, in the following explanation, the third embodiment is applied. An example will be described in which the characteristic structures of the examples are independently embodied.

[0050] FIG. 8 shows a steam generator according to a third embodiment of the present invention, which includes a number of unit holes as described above with reference to FIG. FIG. 2 is a conceptual diagram illustrating a cross-sectional structure of a worn mask.

[0051] Referring to FIG. 2 and FIG. 8, the deposition mask according to the third embodiment of the present invention has a thickness. The metal plate has a first surface and a second surface which are perpendicular to the thickness direction and opposed to each other. and a second surface, wherein a boundary surface extends through and connects the first surface and the second surface. A first surface hole (110) and a second surface hole (130) are in communication with each other through a boundary portion (120). It is composed of a number of unit holes.

[0052] In particular, the unit hole has a depth in the thickness direction of the metal plate of the first surface hole and a depth in the thickness direction of the second surface hole. The metal plates may be embodied so that their depths in the thickness direction are different from each other. In this case, the first surface hole ( The second surface hole (110) and the second surface hole (130) are the most distant from the boundary portion (120) which is the portion that is in communication with each other. Based on the outer corner protrusion points (A1 to A21), the second surface hole (130) where deposition is realized is arranged. The area where the deposition is performed is the effective area (AC), and the area not involved in deposition is the first surface hole (1 10) and the second surface hole (130) are the outermost corners of the boundary portion (120) which are the interconnected portions. The area outside the protruding points (A1, A21) where the second surface hole is not placed is a non-valid area. This is defined as region (NC).

[0053] That is, referring to FIG. 2 with reference to FIG. 8, in the illustrated structure, the effective area (A In the case of the unit hole in C), the depth (b) of the first surface hole (110) to the boundary (120) is The depth (a) of the second hole (130) to the boundary may be greater than the depth (a) of the second hole (130). In general, the ratio of the depth (a) of the second surface hole to the total thickness (c) of the metal plate is 1:(3 〜30).

[0054] In the case where unit holes having different widths and depths are implemented as in the embodiment of the present invention, The depth (a) of the second surface hole (130) acts as an important factor for controlling the thickness of the deposition. However, the depth (a) of the second surface hole (130) becomes too deep, and the entire substrate If the thickness ratio range is exceeded in relation to the thickness (c) of the organic material, the change in thickness This results in the formation of dead space (hereafter referred to as 'undeposited space'). This is called the 'area'.) and causes fatal problems, such as The uncoated area reduces the area of ​​the organic material in the entire OLED, which reduces its lifespan. It begins to act as a cause.

[0055] Therefore, in the deposition mask according to the third embodiment of the present invention, the depth of the second surface hole (130) is The ratio of (a) to the thickness (c) of the metal plate is within the above-mentioned range of 1:(3.5-12.5). More preferably, the ratio should be 1:(4.5~10.5). In the embodiment of the present invention, before satisfying such a ratio range, The thickness (c) of the metal plate may be 10 μm to 50 μm. If it is less than 10μm, the degree of twist of the substrate becomes large and the process control becomes difficult. If the thickness of the substrate exceeds 50 μm, the deposition process may be delayed. The occurrence of space is increasing, and the fine pattern of OLED is In particular, the thickness (c) of the substrate in this range is 15 μm to 40 μm. It is more preferable to realize the thickness of 20 μm to 30 μm. It can be realized at 0 μm.

[0056] In addition, the depth (a) of the second surface hole corresponding to the thickness (c) of the metal plate is 0.1 μm to This is because the depth (a If the depth (a) of the second surface hole is less than 0.1 μm, it is difficult to realize a groove. If the thickness exceeds 7μm, the O will be generated due to the dead space when deposition is performed later. Fine LED patterns are difficult to form, and the organic area is reduced, shortening the OLED lifespan. In particular, the depth (a) of the second surface hole is within the above range of depth. It can be realized in a range of 2 μm to 6 μm, and more preferably in a range of 2 μm to 4.5 μm. This can be done.

[0057] Here, the factors that can be considered to further increase the efficiency of deposition are the flow rate of the deposition material, The inclination angle of the inner surface of the one-sided hole (110) can be taken into consideration.

[0058] As shown in FIG. 2, the boundary (120) is located at an arbitrary point (A 1 )and An arbitrary point (B 1 ) the inclination angle (θ) This is because the temperature can be varied from 20 degrees to 70 degrees when depositing organic materials. Due to the characteristics of the deposition equipment, the deposition source uses a point source, so the upper inclination angle (slo pe angle) must be within the above range to ensure uniform deposition. If the above tilt angle range is exceeded or deviated from, the occurrence of uncoated areas increases. It becomes difficult to ensure uniform deposition reliability. In a preferred embodiment that can be realized within a range, the inclination angle (θ) is in the range of 30 degrees to 60 degrees, More preferably, the angle is embodied to satisfy the range of 32 degrees to 38 degrees or 52 degrees to 58 degrees. It is possible.

[0059] The structure of the first surface hole that is connected to the second surface hole through a common boundary surface according to the embodiment of the present invention is as follows: The width of each groove narrows toward the center of the metal plate, which is advantageous in terms of deposition efficiency. Advantageously, and particularly preferably, the inner surface of the second surface hole or the first surface hole has a curvature. Such a curvature structure can be realized by adjusting the input density of the deposition material and by using a simple slot. This has the advantage of improving deposition uniformity compared to the loop structure.

[0060] In addition, the width (C) of the opening on the one surface of the second surface hole according to the embodiment of the present invention and the boundary The width (A) of the first surface hole and the width (B) of the opening on the other surface of the first surface hole have a ratio of B>C>A. This can be achieved by adjusting the deposition material input density, as in the above-mentioned effectiveness of the curvature structure. Therefore, the uniformity of deposition can be improved. The difference in length (d=CA) between the width (C) and the width (A) of the boundary portion is in the range of 0.2 μm to 14 μm. This allows the implementation to fulfill the above requirements.

[0061] That is, the outermost corner of the boundary portion at any point (C1) of the outermost corner of the second surface hole on the one surface The vertical distance (d1) to any point (A1) can be 0.1 μm to 7 μm. If the vertical distance (d1) is less than 0.1 μm, it is difficult to realize the groove. If it exceeds 7μm, OLE will occur due to the dead space in the deposition process. D Fine pattern formation is difficult, and the organic area is reduced, reducing the OLED lifespan. In addition, the vertical distance (d1) can be realized within the range of the vertical distance (d1). In a preferred embodiment, the vertical distance (d1) is 1 μm to 6 μm. More preferably, it can be realized in the range of 2 μm to 4.5 μm.

[0062] In addition, the corner of the opening on the one surface of the second surface hole (or the first surface hole) according to the embodiment of the present invention The part can be embodied in a structure having a curvature.

[0063] As shown in FIG. 5 and FIG. 6, the upper plane of the second surface hole (110), i.e., the substrate Considering the horizontal cross-sectional shape of the opening area exposed on one side, a rectangular or regular square structure In this case, each corner is rounded to have a certain curvature. It is preferable that the above-mentioned structure be implemented.

[0064] In particular, the straight line of a virtual circle formed by extending the curvature of the rounded corner portion When the diameter (R) is in the range of 5μm~20μm, the deposition area can be expanded. The shape of the base part with corners where attachments are formed makes it difficult to realize deposition smoothly, Uncoated areas inevitably occur, and the rounded structure improves deposition efficiency. In particular, the deposition rate is highest and uniform at a curvature within the above range. When the curvature is less than 5 μm, there is no significant difference from the one without curvature treatment, and when it exceeds 20 μm In this case, the deposition rate will decrease. In a preferred embodiment, the diameter (R) is 7 μm to 15 μm, and more preferably 8 μm to 1 It can be realized in the range of 2 μm.

[0065] In particular, in the embodiment of the present invention, the surface roughness (Ra ) is preferably embodied at 2 μm or less, which can improve the deposition quality of organic materials. The larger the surface roughness, the more difficult it becomes to mount the As the material moves along the grooves, resistance is generated, and the roughness is greater than that of the above. In such a case, smooth deposition is difficult and the occurrence of non-deposited areas increases. 4. Fourth Example

[0066] In the following, a deposition mask according to another embodiment of the present invention is proposed. Of course, the technical features of the first to third embodiments can be applied to the fourth embodiment. However, in this description, a structure in which the characteristic parts of the fourth embodiment are embodied independently is taken as an example. He explains.

[0067] In the fourth embodiment, the deposition masks are also arranged perpendicular to the thickness direction. A metal plate having a first surface and a second surface opposed to each other, The unit hole has a first surface hole (110) and a second surface hole (130) that communicate with each other. They are identical in that they are composed of a large number of

[0068] However, referring to FIG. 9, the difference between the structure of FIG. 9 and the third embodiment shown in FIG. 8 is only The deposition includes an effective area (AC) where the position holes are arranged and a non-effective area (NC) at the outer corner of the effective area. In the structure of the mask for the mask, the thickness of the metal plate in the effective area is The difference is that the thickness of the insulating layer 14 can be different from that of the insulating layer 14.

[0069] In particular, referring to FIG. 9, in the fourth embodiment, the effective area in which the unit holes are arranged is The maximum thickness of the metal plate in the 1 ) and the maximum thickness of the metal plate in the non-effective area of ​​the outer corner of the effective area (h 2 ) is taken into consideration, the maximum thickness (h 1 ) is the metal of the non-effective region Maximum plate thickness (h 2 In this case, the effective area of ​​the metal Maximum plate thickness (h 1 )' is the thickness of the metal plate on the surface of the second surface on which the second surface hole is embodied. The maximum protruding part of the metal plate protruding in the thickness direction (hereinafter referred to as the 'protruding part') 1 ) thickness This is defined as the maximum value.

[0070] In this case, the maximum thickness (h 2 ) is the most Large thickness (h1 ) in relation to 0.2h 1 <h 2 <1.0h 1 To satisfy the Furthermore, within this range, 1 <h 2 <0.9h 1 To realize the above It is possible.

[0071] The maximum thickness of the metal plate in the non-effective area (h 2 ) compared to the maximum thickness of the metal plate in the effective area (h 1 ) may be embodied to have a thickness of 20 to 100%, and within this range, the maximum thickness (h 2 ) can be formed to have a thickness of 25 to 85%, or even 30 to 60%. As an example, the maximum thickness of the metal plate in the non-effective area (h 2 ) to 30μm, the effective area The maximum thickness of the metal plate (h 1 ) is 6μm~27μm, or 7.5μm~25.5μm Or, it can be realized in the range of 9 μm to 18 μm.

[0072] As mentioned above, the numerical range is to improve deposition efficiency by adjusting the slope (inclination angle) of the first surface hole. When the height of the effective area is reduced, the deposition angle can be easily secured and controlled. This makes it possible to realize a high-resolution deposition mask.

[0073] FIG. 10 is a conceptual diagram of a unit hole in which the first surface hole and the second surface hole in FIG. 9 are connected. As described above, in particular, in terms of ensuring such a deposition angle, the configurations shown in FIG. 0 is based on a point on the opening of the first or second surface hole on the metal plate surface, When considering the inclination angle connecting any point up to the boundary, The slope from a point to the boundary and the slope from a point on the minor axis to the boundary are mutually exclusive. This allows the implementation to be different.

[0074] Specifically, the first surface hole (110) or the second surface hole (110) exposed on the surface of the metal plate From a point in the long axis direction of the opening of the hole (130) to the boundary between the first surface hole and the second surface hole A first inclination angle (θ1) to an arbitrary point of the portion (120) and a portion exposed on the surface of the metal plate From a point in the short axis direction of the opening of the first surface hole or the second surface hole, The second inclination angles (θ2) of the boundary portions (120) of the second surface holes to a certain point are different from each other. In other words, the slope of the inner surface of the same first surface hole or second surface hole is In this embodiment, the first inclination is particularly The inclination angle (θ1) is smaller than the second inclination angle (θ2). The inclination angle (θ1) can be realized in the range of 20° to 80°. If the slope angle is different inside the second surface hole (or the first surface hole), This provides the advantage of improving the uniformity of the garment.

[0075] In addition, in the structure of the fourth embodiment, the effective area is divided as shown in FIG. The protrusion (g1) can be formed in a structure that realizes a curvature at the protrusion (g1). In this way, a curvature is realized at the protruding portion (g1) point facing the attachment of the effective area. If the deposition material flows through the holes on the first surface during deposition, the deposition material is not deposited in the adjacent area. Since the gas can be efficiently dispersed and flowed in, the deposition efficiency and deposition uniformity can be improved. For this purpose, the curvature formed at the protruding portion (g1) has a radius of curvature (R) of 0.5 μ m or more. If the radius of curvature (R) is less than 0.5 μm, The above-mentioned dispersion efficiency becomes poor.

[0076] In the structure of the fourth embodiment, the non-effective area (NC) portion shown in FIG. In addition, the tension control pattern (HF) is etched in the thickness direction of the metal plate. The tension control pattern (HF) is a groove pattern that does not penetrate the metal plate. The semiconductor device may be realized with a half-etched region (hereinafter, defined as a 'half-etched region').

[0077] The half-etched region is embodied to have a thickness smaller than the thickness (h1) of the metal plate. This is because the deposition mask itself is subjected to tension during OLED deposition. In this case, the phenomenon that the tensile force is concentrated in the active area is dispersed, and deposition is made more efficient. The deposition rate can be increased and the deposition material can be made uniform.

[0078] In particular, in the case of the half-etched region, the thickness (h1) of the metal plate is 10% to 100% That is, the thickness of the half-etched region (h3 ) is 0.1h1 in relation to the thickness (h1) of the metal plate in the non-effective region. <h3<1 It can be embodied to satisfy the relationship of .0h1. 10% to 10% of the thickness (h1) of the metal plate. In the 0% thickness range, the thickness of the half-etched region is 20% to 80%, or 30% It can be realized at ~70%.

[0079] For example, for a metal plate with a thickness of 30 μm, the thickness of the half-etched area is 3 μm to 2 It can have a thickness of 7μm (10% to 90% of the thickness of the metal plate (h1)). Furthermore, in order to realize a slimmer structure and achieve a tensile force dispersion effect, 6μm~24μm, which is 20%~80% of the thickness, or 30%~70% of the metal plate thickness It can be realized in the range of 9μm to 21μm.

[0080] FIG. 11 is an image of a portion of the first surface where the first surface hole of FIG. 10 is embodied. Referring to FIG. 10, the protrusions facing the attachment of the effective area in the structure of the fourth embodiment are The first surface portion, which is the surface opposite to the portion (g1), is formed in a plurality of pieces, The heights of the first surface portions are made different from each other to reduce the deposition pitch during the deposition process. That is, in the structure of FIG. 11, Z1, Z2 , Z3 points can be realized at different heights. 5. Fifth Example

[0081] The structure of a deposition mask according to another embodiment of the present invention will be described below. The structure of the fifth embodiment simultaneously has the features of the first to fourth embodiments described above. However, in the following description, the feature of the fifth embodiment is Hereinafter, an example in which a specific structure is independently embodied will be described.

[0082] FIG. 5 is a cross-sectional view of the recess of the deposition mask according to the embodiment of the present invention. The features are as follows:

[0083] The deposition mask according to the present embodiment has a thickness as shown in FIG. A metal plate having a first surface and a second surface that are perpendicular to the direction and opposed to each other, A first surface hole (110) and a second surface hole ( In this case, the first surface hole (110) and The first and second holes (130) communicate with each other by sharing a boundary portion (120). Such a unit hole may be implemented in a structure in which a number of such unit holes are provided.

[0084] In particular, in this case, the unit holes formed in the deposition mask are formed on the first surface (112 ) has a roughness value equal to or less than the roughness value of the third roughness (Ra3) which is the surface roughness of That is, the first roughness (Ra3) of the first inner surface can be calculated based on the third roughness (Ra4). The second roughness (Ra1) of the second inner surface (131) which is the inner surface of the second surface hole is It is possible to make it even smaller [Ra3≧(Ra2 or Ra1)].

[0085] Furthermore, the second roughness (Ra2) of the second inner surface (131) which is the inner surface of the second surface hole is The first inner surface (111) of the first surface hole (110) has a first roughness (Ra1) or more. The values ​​of Ra2 and Ra1 can be formed to be [Ra2≧Ra1].

[0086] This is because the surface of the deposition mask, which is made of metal, has a roughness. If the amount is more than a certain amount, the straightness of the unit hole, which is the hole for deposition during deposition mask manufacturing, (Line roughness in Figure 7) When cleaning after organic deposition, the cleaning power decreases, shortening the life of the deposition mask.

[0087] In this embodiment, the arithmetic mean roughness (Ra1) of the first inner surface and the second inner surface The arithmetic mean roughness (Ra2) of the surface roughness can be realized to be 1.0 μm or less. Within the above range, the arithmetic average roughness (Ra) of the first inner surface, the second inner surface, and the first surface is 0.08 If it is realized with a thickness of 0.5μm or less, 0.15~0.3μm or less, it will be more reliable. This allows for high adhesion efficiency.

[0088] In this case, the arithmetic mean roughness (Ra) is calculated by multiplying the center line surface roughness (Ro ughness Average, Ra), CLA(Center Line Average It is also expressed as AA (Arithmetic Average) and AA (Arithmetic Average). The height and depth of the peaks and valleys on the surface of the surface are defined as the average value obtained by centering the reference line. In other words, as shown in the graph in Figure 5, the reference line (center line) of the surface on which the roughness is to be measured is used as the reference. The degree of roughness is expressed as a function of surface roughness, and is expressed as an arithmetic average.

[0089] In another aspect of the embodiment of the present invention, the first inner surface of a deposition mask; At least one of the second inner surface and the first surface has a 10-point average roughness (Rz) value of 3.0μ m or less. Furthermore, within this range, the first inner surface and the second inner surface At least one of the side surfaces and the first surface has a 10-point average roughness (Rz) value of 2.5 or less, 1. By implementing it at 5 to 2.5 or less, more reliable deposition efficiency can be implemented.

[0090] In this case, the 10-point average roughness (Rz) is calculated as shown in Figure 13. The surface roughness of 10 points (Ten Points) is measured based on the reference line of the reference surface. nt Height of Irregularities, Rz).

[0091] Furthermore, the deposition mask according to the embodiment of the present invention has a lamination pattern of the outer diameter of the unit hole as described above with reference to FIG. Line Roughness, or the straightness of a hole, is 1 The line roughness of the outer diameter of the unit hole can be realized at 0.5μm. Straightness is the distance between the center of the outer diameter of the hole and the line drawn. The reference line (center line) is used as the reference line, and the scale deviates in either direction from this center line. The farthest distance from the center line is expressed as straightness.

[0092] In the embodiment of the present invention, the straightness was measured, which will be described with reference to Figs. 14 to 16. Figures 14 and 15 show the actual state of the first surface hole in Figure 2. Referring to this, the short and long axes of the opening of the first surface hole are x and y, respectively. The total length of the y-axis, which is the long axis, is measured only on the y-axis. The length is divided into halves, and the center of the halves is defined as y2. In this case, measure the roughness of the outer diameter line of the opening within a range of 1.5 μm to the left and right from y2, for a total of 3 μm. In this case, the measurement range should not exceed 3 μm, and the straightness should be within the range of 3 μm. The deposition mask according to the embodiment of the present invention can be realized to be 1.5 μm or less. In addition, the straightness can be reduced to 1.5 μm or less within a measurement range of 3 μm. 6. Sixth Example

[0093] In the following, a deposition mask according to the first to fifth embodiments will be manufactured. An embodiment of a metal substrate that is particularly useful will now be described.

[0094] 17 and 18 are conceptual diagrams for explaining the characteristics of a metal substrate according to an embodiment of the present invention. be.

[0095] 17 and 18, the metal substrate according to the embodiment of the present invention has a base having a thickness. It is possible to realize a metal substrate of a thickness that can be used to etch a thin metal plate to create a deposition mask. In particular, the metal substrate is designed to minimize local or overall twisting. The present invention enables the realization of a metal substrate.

[0096] For this purpose, the metal substrate according to the first embodiment of the present invention is as shown in FIG. A sample substrate is extracted from a base metal plate having a uniform thickness. The sample substrate (200) has an etching region (210) where etching is performed and an unetched region (220) where etching is performed. The etching region (220) may be embodied as the etching region (220) of the base metal plate. The substrates taken for etching are called 'sample substrates', and the substrates taken for etching are called 'base substrates'. The substrate to which no etching is applied is defined as a 'unit substrate'.)

[0097] In this case, the base metal plate has a first surface and a second surface which are perpendicular to the thickness direction and opposed to each other. and a second surface. At the ends of both sides of the sample substrate (200) taken at 30 mm x 180 mm (horizontal x vertical) Leave 10mm on the inside (220 part) and cut the inside to 2 / 3~1 / 2 the thickness mentioned above. Then, the sample substrate is etched horizontally to form an etching region 210. When the sample is placed on a sample surface, the torsion index (Hr) of the etched sample substrate is related to the following: Fill the role. [Number 1] HR={(H1-Ha)2+(H2-Ha)2+(H3-Ha)2+(H4-Ha )2}1 / 2 [Number 2] Ha=(H1+H2+H3+H4) / 4 (Ha is the distance that the four corners of the etched sample substrate are separated from the horizontal target surface ( This is defined as the average separation distance between H1, H2, H3, and H4.

[0098] 1, 17 and 18, the characteristics of the metal substrate according to the embodiment of the present invention will be described. The characteristics are explained as follows:

[0099] Generally, as shown in FIG. 1, a deposition mass is manufactured using a metal substrate according to an embodiment of the present invention. The mask is a mask structure that embodies the formation of the organic layer of the OLED, and the deposition material is provided by the deposition material. The deposition source (S) is a substrate (G) such as glass on which a deposition target (T) is mounted. In this case, the deposition mask (M; 100) is a multi-layered mask. In general, it is used to improve deposition uniformity during OLED deposition. For the above, the deposition mask must be maintained in a uniform state during the deposition process.

[0100] However, when etching a metal plate to make a deposition mask, the thickness If it becomes very thin and many deposition holes are realized in it, the deposition mask to be manufactured will be The disk is easily twisted, and the arrangement shown in Figure 1 makes it difficult to ensure uniform deposition. It becomes.

[0101] Therefore, in the embodiment of the present invention, the twist that occurs in the metal plate or during etching of the metal plate is The present invention provides a metal substrate that can minimize the thickness of the metal substrate. Take a sample substrate with a base metal plate measuring 30 mm x 180 mm.

[0102] After that, the sample substrate was cut into 1 / 2 to 2 / 3 of the 180 mm long axis, leaving 10 mm on both sides. After that, the sample substrate that has been etched is placed on a flat surface with a level surface. For example, when the sample substrate is placed on an object such as a surface plate, the horizontal surface of the surface plate is The heights H1, H2, H3, and H4 of the four corners of the sample substrate are measured on the standard surface. Determine.

[0103] In this case, the heights at which the four corners of the sample substrate are spaced apart are H1, H2, H3, and H If 4 is '0' or more, this state is defined as the sample substrate being 'twisted'. The degree of twisting is expressed as an index as shown in the above formula 1, and is called the twisting index (Hr ) is defined as

[0104] Therefore, the larger the twist index (Hr) of the sample substrate, the greater the degree of twist of the substrate. In the present invention, the same size of the base metal plate at any point is An unetched sample substrate (hereinafter referred to as 'unit substrate') was extracted (30mm x 180mm). When comparing the torsion index of the sample substrate with and without etching, The torsion index of the sample substrate to which the etching was applied is larger than that of the unetched sample substrate. It becomes formed.

[0105] That is, a 30 mm x 180 mm (width) area is placed on any point of the base metal plate. The unetched sample substrate (unit substrate) taken in the direction perpendicular to the horizontal axis is placed on a horizontal target surface, and The twists obtained for the four corner points of the substrate (T1) according to the above [Equation 1] and [Equation 2] The index (Hr(T1)) is the sample substrate obtained by etching the base metal plate. (T2) to be realized with a torsion index (Hr(T2)) or less, which is It can be expressed by the formula: [Number 3] Hr(T1)≦Hr(T2)

[0106] In particular, in the embodiment of the present invention, the twist index of the sample substrate is 10 or more. For example, when the thickness of the base substrate is 20 μm, the sample substrate is extracted. The four corners of the sample substrate were horizontally etched. It will be possible to realize a surface area of ​​less than 10μm.

[0107] That is, the torsion index of the etched sample substrate is 10 or less. It can be realized in the range of 0.2 to 7 or 0.5 to 5. If the twist index of the sample substrate is 10 or less, twisting phenomenon occurs during the manufacturing of the final deposition mask. This can prevent the left and right deviation during OLED deposition, improving deposition uniformity. You will be able to do it.

[0108] In order to realize a torsion index of 10 or less for the sample substrate according to the embodiment of the present invention, the base material In the process of forming a metal substrate, a cooling process and a rolling process are carried out. First, the base material is cooled at a temperature of 10 to 20°C, and then rolled. In this case, a rolling process is carried out to realize a metal plate of a desired thickness. In this case, the degree of rolling is important. In this case, the rolling rate is the unit volume (1 mm 3 ) This can be realized in a ratio of 2 / 3 to 1 / 5.

[0109] FIG. 18 shows a sample substrate taken from the base metal plate 200 according to the embodiment of the present invention. FIG. 1 is a diagram for explaining the torsion index when etching is performed in a manner similar to that shown in the figure. The sample substrate has four corners that are lowered relative to the horizontal target surface (ST). At least one of the separation distances (H1 to H4) has a different length. That is, H1 and H2, or H3 and H4, adjacent to each other in the minor axis direction of the sample substrate, are different from each other. It is possible.

[0110] In the case of the metal substrate according to the embodiment of the present invention described above, the first etching region of the metal substrate A plurality of unit holes are provided, each having a first surface hole and a second surface hole that are connected to each other and penetrate the first surface and the second surface. In particular, the deposition mask thus realized may include a mask The twist of the film is significantly reduced, and the deposition reliability can be achieved.

[0111] In the above detailed description of the present invention, specific examples have been described. However, various modifications are possible without departing from the scope of the present invention. The invention should not be limited to the above-described embodiment, but should be construed as being within the scope of the appended claims. The scope of the present invention must be determined based on the scope of the claims and their equivalents.

Claims

1. a metal plate having a thickness; The metal plate has a first surface and a second surface that are perpendicular to the thickness direction and opposed to each other. death, a first surface hole and a second surface hole penetrating the first surface and the second surface and communicating therebetween; Includes many unit halls, The size deviation of the first or second surface hole between adjacent unit holes can be set to any unit hole size. A deposition mask in which the deviation in size between holes is within 10%.

2. The deviation in size between unit holes is 2. Claim 1, wherein the size deviation between adjacent first surface holes or second surface holes is within ±3 μm.

2. The deposition mask according to claim 1 .

3. The size deviation of the first surface hole or the second surface hole is Between the diameter of the first surface hole or the second surface in a first direction and the diameter in a second direction perpendicular to the first direction The deposition mask according to claim 2 , wherein the deviation in diameter is 0.01 mm or less.

4. The maximum width or height of the protrusion protruding from the outer circumferential surface of the second surface hole toward the center is 20 μm.

2. The deposition mask according to claim 1, wherein:

5. a metal plate having a thickness; The metal plate has a first surface and a second surface that are perpendicular to the thickness direction and opposed to each other. death, a first surface hole and a second surface hole penetrating the first surface and the second surface and communicating therebetween; Includes many unit halls, The center of the first surface hole and the center of the second surface hole are aligned with each other based on the surface of the first surface. A deposition mask including at least one unit hole disposed at a position where the unit hole does not coincide with the deposition mask.

6. The mutually inconsistent structures are A virtual vertical line perpendicular to the surface of the first or second surface of the metal plate is the center of the hole on the first surface. and the center of the hole on the second surface, 6. The structure according to claim 5, wherein the centers of the holes are offset so as not to pass over the centers of the other holes. Evaporation mask.

7. The distance (B) between the center of the first surface hole and the center of the second surface hole is the diameter of the second surface hole.

6. The deposition mask according to claim 5, wherein the length (A) of the mask is 0.9 A or less.

8. The size deviation of the first or second surface hole between adjacent unit holes can be set to any unit hole size.

6. The deposition mask according to claim 5, wherein the deviation in size between the holes is within 10%.

9. The unit hole is The thickness of the metal plate to a boundary surface where the first surface hole and the second surface hole communicate with each other. The deposition mask according to claim 5 , wherein the width of the mask decreases in the direction toward the deposition mask.

10. The opening width of the first surface hole exposed on the first surface is equal to the opening width of the second surface hole exposed on the second surface. The deposition mask according to claim 7 .

11. a metal plate having a thickness; The metal plate has a first surface and a second surface that are perpendicular to the thickness direction and opposed to each other. death, a first surface hole and a second surface hole penetrating the first surface and the second surface and communicating therebetween; Includes many unit halls, The maximum thickness (h1) of the metal plate in the effective area where the unit holes are arranged and the outer angle of the effective area The deposition masks have different maximum thicknesses (h2) of the metal plate in the non-effective area.

12. The maximum thickness (h1) of the metal plate in the effective area is the maximum thickness (h2) of the metal plate in the non-effective area.

12. The deposition mask according to claim 11, wherein the mask width is smaller than the width of the deposition mask.

13. The maximum thickness (h ２ ) is the maximum thickness (h １ ) in relation to 0.2h １ <h 2 <1.0h １ The steam steaming method according to claim 12, Wearing mask.

14. A tension adjusting pattern is provided in the non-effective area and is etched in the thickness direction of the metal plate. The deposition mask according to claim 12 .

15. The tension adjustment pattern has a thickness smaller than the thickness (h1) of the metal plate in the effective area. The deposition mask according to claim 14 , wherein the mask is a half-etched region.

16. The thickness (h3) of the half-etched region is the thickness (h1) of the metal plate in the non-effective region. The relationship of 0.1h1<h3<1.0h1 is satisfied in the relationship of claim 15. Evaporation mask.

17. The first surface hole or the second surface hole is exposed on the surface of the metal plate in the longitudinal direction of the opening. a first inclination angle from a point to a point on a boundary between the first surface hole and the second surface hole; From a point in the short axis direction of the opening of the first surface hole or the second surface hole exposed on the surface of the metal plate and a second inclination angle to a point on the boundary between the first surface hole and the second surface hole is different from each other. The deposition mask according to claim 11 .

18. The deposition mask according to claim 17 , wherein the first tilt angle is smaller than the second tilt angle.

19. The deposition mask according to claim 18, wherein the first tilt angle is in a range of 20° to 80°.

20. The metal plate in the effective area is 18. The method according to claim 17, wherein a curvature is implemented in a protrusion protruding from the first surface toward the second surface. The deposition mask is shown.

21. The deposition mask according to claim 20 , wherein the protruding portion has a curvature of 0.5 μm or more. 。

22. At least one of the first surface portions facing the protrusion has a different height for each unit hole. The deposition mask according to claim 20 , further comprising one or more

23. a metal substrate comprising etched and unetched areas; a first surface hole formed in a depth direction of the metal substrate from the first surface of the etched region; The first surface hole is formed in the depth direction of the metal substrate from the second surface of the etching region. a second surface hole communicating with the boundary portion as a reference; The deposition mask includes a plurality of unit holes each formed of a set of the second surface holes communicating with the first surface holes. School.

24. The unit hole is The third roughness (Ra3) which is the surface roughness of the first surface is the surface roughness of the first inner surface of the first surface hole. a first roughness (Ra1) which is a surface roughness of the second inner surface of the second surface hole; The deposition mask according to claim 23 , having a value of (Ra2) or more. (where Ra means the arithmetic mean roughness of the target surface)

25. 25. The steam turbine according to claim 24, wherein the second roughness (Ra2) is equal to or greater than the first roughness (Ra1). Wearing mask.

26. The arithmetic mean roughness (Ra) of the first inner surface, the second inner surface, and the first surface is 1.0 or less. The deposition mask according to claim 25 .

27. The first inner surface, the second inner surface, and the first surface have a ten-point average roughness (Rz) of 3.0 or less. The deposition mask according to claim 26 ,

28. the straightness of the opening of the first surface hole or the second surface hole of the unit hole is 1.5 μm or less; The deposition mask according to claim 23 .

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