Particle alignment device, particle alignment method, film, and producing method of film

Abstract

To improve alignment of conductive particles.SOLUTION: A particle alignment device 1 is equipped with a magnetic member 2 that has magnetism, and the magnetic member 2 has an alignment surface 21 for aligning conductive particles P and a plurality of recesses 24 formed on the alignment surface 21. The particle alignment method for aligning conductive particles using the particle alignment device 1 includes a particle supply step of supplying conductive particles P onto the alignment surface 21 of the magnetic member 2, a magnetic field application step of applying a magnetic field to the magnetic member 2, and a particle removal step of removing the conductive particles P from the alignment surface 21.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a particle alignment apparatus, a particle alignment method, a film, and a film manufacturing method. [Background technology]

[0002] Conventionally, a method using an imprint method is known as a method for aligning conductive particles (see, for example, Patent Document 1). In the imprint method, an alignment member having a plurality of recesses formed on its surface is prepared, and conductive particles are placed in the recesses to align the conductive particles. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2020 / 004511 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, when the particle diameter of the conductive particles is small, it is possible to scatter the conductive particles on the surface of the alignment member, and then spray high-pressure gas onto the surface of the alignment member or sweep the surface of the alignment member with a brush, thereby placing the conductive particles into the recesses and removing the conductive particles that do not enter the recesses from the surface of the alignment member.

[0005] However, when high-pressure gas is sprayed onto the surface of the alignment member or the surface of the alignment member is swept with a brush, the conductive particles are removed from the recesses, causing a problem in that the alignment of the conductive particles is deteriorated.

[0006] In view of the above, an object of the present disclosure is to provide a particle alignment device and a particle alignment method capable of improving the alignment of conductive particles, and a film and a method for manufacturing the film in which the alignment of conductive particles is improved. [Means for solving the problem]

[0007] A particle alignment device according to the present disclosure includes a magnetic member having magnetism, the magnetic member having an alignment surface for aligning conductive particles and a plurality of recesses formed on the alignment surface.

[0008] In this particle alignment device, since a plurality of recesses are formed on the alignment surface of the magnetic member having magnetism, when a magnetic field is applied to the magnetic member, a leakage field that leaks into and near the recesses is generated in each of the plurality of recesses. Therefore, when ferromagnetic conductive particles are supplied to the alignment surface and a magnetic field is applied to the magnetic member, the conductive particles supplied to the alignment surface are attracted by the leakage magnetic field generated in the plurality of recesses and enter the plurality of recesses, and are held in the plurality of recesses. Therefore, by spraying high-pressure gas onto the alignment surface or sweeping the alignment surface with a brush, the conductive particles that are not held in the plurality of recesses can be removed from the alignment surface while maintaining the state in which the conductive particles are held in the plurality of recesses. As a result, the conductive particles are aligned to correspond to the plurality of recesses, improving the alignment of the conductive particles.

[0009] In the particle alignment device, the plurality of recesses may be regularly arranged. In the particle alignment device, since the plurality of recesses are regularly arranged, the conductive particles can be regularly aligned.

[0010] In the particle alignment device, the plurality of recesses may be arranged in a mesh-like pattern. In this particle alignment device, since the plurality of recesses are arranged in a mesh-like pattern, the conductive particles can be aligned in a mesh-like pattern.

[0011] In the particle alignment device, the plurality of recesses may be through holes penetrating the magnetic member. In this particle alignment device, since the plurality of recesses are through holes penetrating the magnetic member, when the magnetic member is thin, the plurality of recesses can be easily formed.

[0012] In the particle alignment device, the plurality of recesses may be bottomed holes that do not penetrate the magnetic member. In this particle alignment device, since the plurality of recesses are bottomed holes that do not penetrate the magnetic member, the plurality of recesses can be easily formed when the magnetic member is thick.

[0013] In the above particle alignment device, the saturation magnetic flux density of the magnetic member may be equal to or greater than 0.5 T. In this particle alignment device, since the saturation magnetic flux density of the magnetic member is equal to or greater than 0.5 T, the holding force of the conductive particles in the recesses can be increased.

[0014] In the above particle alignment device, when the recess is a circular hole, the depth of the recess may be 1 / 4 or more times the diameter of the opening of the recess. In this particle alignment device, when the recess is a circular hole, the depth of the recess is 1 / 4 or more times the diameter of the opening of the recess, so that the strength of the leakage magnetic field generated in the recess can be increased to an extent that the conductive particles can be easily attracted to the recess.

[0015] In the above particle alignment device, when the recesses are circular holes, the interval between the recesses may be at least twice the diameter of the recess opening. In this particle alignment device, when the recesses are circular holes, the interval between the recesses is at least twice the diameter of the recess opening, so that it is possible to prevent the leakage magnetic field from affecting each other between adjacent recesses and to prevent the aligned conductive particles from becoming too dense.

[0016] In the above particle alignment device, the alignment surface may be subjected to a release treatment. Since the alignment surface of this particle alignment device is subjected to a release treatment, the conductive particles that are not held in the multiple recesses can be easily removed from the alignment surface by spraying a high-pressure gas onto the alignment surface or sweeping the alignment surface with a brush.

[0017] In the particle alignment device, the alignment surface may be a flat surface. Since the alignment surface of the particle alignment device is a flat surface, the conductive particles can be easily aligned.

[0018] In the particle alignment device, the alignment surface may be curved. Since the alignment surface of this particle alignment device is curved, it becomes easier to transfer the aligned conductive particles to a film or the like.

[0019] In the above particle alignment device, the magnetic member may be formed in a cylindrical shape that can rotate around the central axis, and the alignment surface may be formed by the outer circumferential surface of the magnetic member. In this particle alignment device, since the alignment surface is formed by the outer circumferential surface of the magnetic member that can rotate around the central axis, by rotating the magnetic member around the central axis, the supply of conductive particles to the alignment surface and the alignment of the conductive particles by applying a magnetic field to the magnetic member can be continuously performed. In addition, the aligned conductive particles can be easily transferred to a film or the like.

[0020] The particle alignment device may further include a support disposed on the back side of the magnetic member opposite to the alignment surface, and supporting the magnetic member. In this particle alignment device, since the support is disposed on the back side of the magnetic member, the alignment of the conductive particles is ensured and the shape of the magnetic member can be maintained even if the magnetic member is thin.

[0021] The particle alignment device may further include a magnetic field application mechanism for applying a magnetic field to the magnetic member. Since the particle alignment device includes the magnetic field application mechanism for applying a magnetic field to the magnetic member, the conductive particles can be aligned without a separate mechanism for applying a magnetic field to the magnetic member.

[0022] In the above particle alignment device, the magnetic field application mechanism may be configured to apply a magnetic field along the alignment surface to the magnetic member. In this particle alignment device, since the magnetic field application mechanism is configured to apply a magnetic field along the alignment surface to the magnetic member, it becomes easier to hold the conductive particles supplied to the alignment surface in the multiple recesses.

[0023] In the above particle alignment device, the magnetic field application mechanism may have a magnet composed of at least one of a permanent magnet and an electromagnet. In this particle alignment device, since the magnetic field application mechanism has a magnet composed of at least one of a permanent magnet and an electromagnet, it is possible to apply a magnetic field to the magnetic member with a simple configuration.

[0024] In the above particle alignment device, the magnetic member may have a side surface adjacent to the alignment surface and extending in a direction intersecting the alignment surface, and the magnet may be disposed adjacent to the side surface of the magnetic member. In this particle alignment device, since the magnet is disposed adjacent to the side surface of the magnetic member, it is easy to align the magnetic field applied to the magnetic member along the alignment surface.

[0025] The particle alignment device may further include a demagnetization mechanism for demagnetizing the magnetic member. Since the particle alignment device includes the demagnetization mechanism for demagnetizing the magnetic member, after a magnetic field is applied to the magnetic member to align the conductive particles, the magnetic member is demagnetized by the demagnetization mechanism, whereby the conductive particles are released from being held in the multiple recesses, and the conductive particles held in the multiple recesses can be easily transferred to a film or the like.

[0026] In the above particle alignment device, the magnetic field application mechanism may have an adjustment mechanism that changes at least one of the magnitude and direction of the magnetic field applied to the magnetic member. In this particle alignment device, since the magnetic field application mechanism has an adjustment mechanism that changes at least one of the magnitude and direction of the magnetic field applied to the magnetic member, the conductive particles can be appropriately aligned even if the size, etc. of the conductive particles to be aligned changes.

[0027] The particle alignment method according to the present disclosure is a particle alignment method for aligning conductive particles using the above-mentioned particle alignment device, and includes a particle supply step of supplying conductive particles onto the alignment surface of a magnetic member, a magnetic field application step of applying a magnetic field to the magnetic member, and a particle removal step of removing the conductive particles from the alignment surface.

[0028] In this particle alignment method, conductive particles are supplied onto the alignment surface of a magnetic member, and a magnetic field is applied to the magnetic member to remove the conductive particles from the alignment surface, thereby making it possible to hold the conductive particles in the multiple recesses and to remove the conductive particles not held in the multiple recesses from the alignment surface. This allows the conductive particles to be arranged in correspondence with the multiple recesses, improving the alignment of the conductive particles.

[0029] In the particle alignment method, the particle removal step may include spraying high-pressure gas onto the alignment surface while a magnetic field is applied to the magnetic member. In this particle alignment method, by spraying high-pressure gas onto the alignment surface while a magnetic field is applied to the magnetic member, the conductive particles that are not held in the multiple recesses can be easily removed from the alignment surface.

[0030] The film according to the present disclosure includes a substrate film and conductive particles aligned on the substrate film, the substrate film having an adhesive layer disposed on a support layer, so that the conductive particles can be easily arranged on the substrate film.

[0031] In the above-mentioned film, the base film may have a support layer and an adhesive layer disposed on the support layer, and the conductive particles may be adhered to the adhesive layer. In this film, since the alignment surface has adhesiveness, the conductive particles can be easily arranged on the alignment surface side of the base film during the production of the film.

[0032] The film manufacturing method according to the present disclosure is a film manufacturing method for manufacturing a film having conductive particles aligned on a base film using the particle alignment device, comprising an alignment step of aligning conductive particles on the alignment surface of the magnetic member, and a transfer step of transferring the conductive particles aligned in the alignment step onto the base film, the alignment step including a particle supply step of supplying conductive particles onto the alignment surface of the magnetic member, a magnetic field application step of applying a magnetic field to the magnetic member, and a particle removal step of removing the conductive particles from the alignment surface. In this film manufacturing method, the conductive particles aligned on the alignment surface of the magnetic member are transferred onto the base film, thereby making it possible to arrange the conductive particles aligned on the base film and to improve the alignment of the conductive particles.

[0033] In the above-mentioned film manufacturing method, the transfer step may include demagnetizing the magnetic member and transferring the conductive particles aligned in the alignment step onto the base film. In this film manufacturing method, by demagnetizing the magnetic member, the conductive particles are released from the recesses, so that the conductive particles that have been held in the recesses can be easily transferred onto the base film. Effect of the Invention

[0034] According to the present disclosure, the alignment of conductive particles can be improved. [Brief description of the drawings]

[0035] [Figure 1] FIG. 1 is a schematic plan view showing a particle alignment device according to an embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view taken along line II-II shown in FIG. [Diagram 3] FIG. 3 is a schematic cross-sectional view corresponding to FIG. 2, showing a state in which the conductive particles are aligned. [Figure 4] FIG. 4 is a schematic cross-sectional view showing an enlarged portion of the magnetic member. [Diagram 5] FIG. 5 is a schematic cross-sectional view showing an enlarged portion of the magnetic member. [Figure 6]FIG. 6 is a schematic cross-sectional view showing an enlarged view of the periphery of the recess. [Figure 7] FIG. 7 is a schematic cross-sectional view showing a modified particle alignment device and corresponding to FIG. [Figure 8] FIG. 8 is a schematic plan view showing a modified particle alignment device. [Figure 9] FIG. 9 is a schematic side view showing a modified particle alignment device. [Figure 10] FIG. 10 is a schematic cross-sectional view showing a modified particle alignment device, corresponding to FIG. [Figure 11] FIG. 11 is a schematic cross-sectional view showing a modified particle alignment device, corresponding to FIG. [Figure 12] FIG. 12 is a schematic plan view showing a film according to an embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view taken along line XIII-XIII shown in FIG. [Figure 14] FIG. 14 is a schematic side view illustrating the method for producing a film according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In the drawings, the same or corresponding parts are given the same reference numerals, and duplicated explanations are omitted. In this specification, the term "layer" includes a structure having a shape formed on the entire surface as well as a structure having a shape formed on a part of the surface when observed in a plan view. In addition, in this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. In addition, a numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively.

[0037] [Particle alignment device] Fig. 1 is a schematic plan view showing a particle alignment device according to an embodiment. Fig. 2 is a schematic cross-sectional view taken along line II-II shown in Fig. 1. Fig. 3 is a schematic cross-sectional view corresponding to Fig. 2, showing a state in which conductive particles are aligned. As shown in Figs. 1 to 3, a particle alignment device 1 according to this embodiment is a device for aligning conductive particles P. The particle alignment device 1 includes a magnetic member 2 having magnetism, a magnetic field application mechanism 3 that applies a magnetic field to the magnetic member 2, and a support 4 that supports the magnetic member 2.

[0038] The magnetic member 2 is made of a magnetic material. The magnetic member 2 is made of, for example, a magnetic material having ferromagnetic properties. Examples of the magnetic material constituting the magnetic member 2 include an alloy containing nickel (Ni) (Ni alloy), an alloy containing iron (Fe) (Fe alloy), and an alloy containing cobalt (Co) (Co alloy).

[0039] The magnetic member 2 has an alignment surface 21 for aligning the conductive particles P, and a first side surface 22 and a second side surface 23 adjacent to the alignment surface 21 and extending in a direction intersecting the alignment surface 21. The surface shape of the alignment surface 21 is not particularly limited and may be planar or curved, but the alignment surface 21 in this embodiment is planar. The first side surface 22 and the second side surface 23 in this embodiment extend in a direction perpendicular to the alignment surface 21 and are opposed to each other so as to sandwich the alignment surface 21. The alignment surface 21 is subjected to a release treatment. Examples of the release treatment include coating the alignment surface 21 with a fluororesin, a silicone resin, or the like.

[0040] A plurality of recesses 24 are formed on the alignment surface 21 of the magnetic member 2. The plurality of recesses 24 have openings 24a that are open from the alignment surface 21. The recesses 24 are for attracting and holding the conductive particles P when a magnetic field is applied to the magnetic member 2. The number of conductive particles P held in one recess 24 is not particularly limited, and may be one or more. The recess 24 may be a bottomed hole that does not penetrate the magnetic member 2, or may be a through hole that penetrates the magnetic member 2. The plurality of recesses 24 in this embodiment are through holes that penetrate the magnetic member 2. The plurality of recesses 24 are regularly arranged. The plurality of recesses 24 are arranged, for example, in a mesh or checkerboard pattern (lattice pattern).

[0041] The hole shape of the recess 24 is not particularly limited. For example, the recess 24 may have the same shape over the entire thickness direction of the magnetic member 2 as shown in FIG. 4, or may have a shape that changes over the thickness direction of the magnetic member 2 as shown in FIG. 5. FIGS. 4 and 5 are schematic cross-sectional views of a part of the magnetic member enlarged. The recess 24 shown in FIG. 4 is composed of a cylindrical or rectangular parallelepiped first hole 24b formed on the alignment surface 21 side and a conical or quadrangular pyramid second hole 24c formed on the opposite side to the alignment surface 21. The first hole 24b and the second hole 24c are connected at a connection port 24d formed in the center of the thickness direction of the magnetic member 2A. For this reason, the opening 24a of the first hole 24b on the alignment surface 21 is larger than the connection port 24d. In addition, when the recess 24 has the same shape over the entire thickness direction of the magnetic member 2 as shown in FIG. 4, the opening 24a of the recess 24 may be smaller than the conductive particles P to be aligned so that the conductive particles P to be aligned do not penetrate the recess 24. Similarly, as shown in Figure 5, when the recess 24 has a shape that changes in the thickness direction of the magnetic member 2, the connection port 24d of the recess 24 may be smaller than the conductive particles P to be aligned so that the conductive particles P to be aligned do not penetrate the recess 24.

[0042] The magnetic field application mechanism 3 is configured to apply a magnetic field along the alignment surface 21 of the magnetic member 2 (for example, a magnetic field parallel to the alignment surface 21) to the magnetic member 2. The magnetic field application mechanism 3 has a first magnet 31 and a second magnet 32. Each of the first magnet 31 and the second magnet 32 ​​is configured with at least one of a permanent magnet or an electromagnet. The first magnet 31 is disposed adjacent to the first side surface 22 of the magnetic member 2 so that the N pole is disposed on the magnetic member 2 side. The second magnet 32 ​​is disposed adjacent to the second side surface 23 of the magnetic member 2 so that the S pole is disposed on the magnetic member 2 side. Therefore, in the magnetic member 2, a magnetic field is generated from the first side surface 22 side toward the second side surface 23 side along the alignment surface 21. In FIG. 2, the magnetic field (magnetic flux) generated in the magnetic member 2 is indicated by an arrow line.

[0043] Here, since the alignment surface 21 has a plurality of recesses 24, the portion of each of the recesses 24 on the first magnet 31 side becomes an N pole, and the portion of each of the recesses 24 on the second magnet 32 ​​side becomes an S pole. A leakage magnetic field leaking into and near the recesses 24 occurs in each of the recesses 24. Therefore, when conductive particles P having ferromagnetic properties are supplied to the alignment surface 21, some of the conductive particles P are attracted by the leakage magnetic field generated in the recesses 24 and enter the recesses 24, and are held in the recesses 24. On the other hand, the conductive particles P that are not held in the recesses 24 are removed from the alignment surface 21 by blowing high-pressure gas onto the alignment surface 21 or sweeping the alignment surface 21 with a brush. This allows the conductive particles P to be aligned on the magnetic member 2.

[0044] From the viewpoint of increasing the holding force of the conductive particles P in the recesses 24, the saturation magnetic flux density Bs of the magnetic member 2 can be, for example, 0.5T or more, 1.0T or more, or 1.5T or more. The saturation magnetic flux density Bs of the magnetic member 2 made of a Ni alloy is about 0.6T, and the saturation magnetic flux density Bs of the magnetic member 2 made of an Fe-Co-X alloy is 2.0T or more. On the other hand, from the viewpoint of easily manufacturing the magnetic member 2, the maximum value of the saturation magnetic flux density Bs of the magnetic member 2 can be, for example, 2.5T or less, 2.0T or less, or 1.5T or less. From these viewpoints, the saturation magnetic flux density Bs of the magnetic member 2 can be, for example, 0.5T or more and 2.5T or less, 1.0T or more and 2.0T or less, 1.0T or more and 1.5T or less, or 1.5T or more and 2.0T or less.

[0045] 6 is a schematic cross-sectional view in which the periphery of the recess is enlarged. As shown in FIG. 6, when the recess 24 is a circular hole, from the viewpoint of increasing the strength of the leakage magnetic field generated in the recess 24 to such an extent that the conductive particles P can be easily attracted to the recess 24, the depth D1 of the recess 24 can be, for example, 1 / 4 times or more, 1 / 3 times or more, or 1 / 2 times or more of the diameter D2 of the opening 24a of the recess 24. On the other hand, from the viewpoint of facilitating the processing for forming the recess 24, the depth D1 of the recess 24 can be, for example, 2 times or less, 1 time or less, or 1 / 2 times or less of the diameter D2 of the opening 24a of the recess 24. From these viewpoints, the depth D1 of the recess 24 can be, for example, 1 / 4 times or more and 2 times or less, 1 / 3 times or more and 1 time or less, 1 / 2 times or more and 1 time or less, or 1 / 3 times or more and 1 / 2 times or less of the diameter D2 of the opening 24a of the recess 24.

[0046] Similarly, when the recess 24 is a rectangular hole, the depth D1 of the recess 24 can be, for example, 1 / 4 or more, 1 / 3 or more, or 1 / 2 or more times the length D3 of the short side of the opening 24a of the recess 24. Also, the depth D1 of the recess 24 can be, for example, 2 or less, 1 or less, or 1 / 2 or less times the length D3 of the short side of the opening 24a of the recess 24. Also, the depth D1 of the recess 24 can be, for example, 1 / 4 or more and 2 or less, 1 / 3 or more and 1 or less, 1 / 2 or more and 1 or less, or 1 / 3 or more and 1 / 2 or less times the length D3 of the short side of the opening 24a of the recess 24.

[0047] When the recesses 24 are circular holes, from the viewpoint of suppressing the influence of the leakage magnetic field between adjacent recesses 24 and suppressing the aligned conductive particles P from being too dense, the interval between the multiple recesses 24 can be, for example, two or more, three or more, or four or more times the diameter D2 of the opening 24a of the recess 24. On the other hand, from the viewpoint of suppressing the density of the aligned conductive particles P from being too low, the interval between the multiple recesses 24 can be, for example, ten or less, eight or less, or six or less times the diameter D2 of the opening 24a of the recess 24. From these viewpoints, the interval between the multiple recesses 24 can be, for example, two or more and ten or less, three or more and eight or less, or four or more and six or less times the diameter D2 of the opening 24a of the recess 24.

[0048] Similarly, when the recesses 24 are rectangular holes, the interval between the multiple recesses 24 can be, for example, two or more times, three or more times, or four or more times the length D3 of the short side of the opening 24a of the recess 24. The interval between the multiple recesses 24 can be, for example, ten or less times, eight or less times, or six or less times the length D3 of the short side of the opening 24a of the recess 24. The interval between the multiple recesses 24 can be, for example, two or more times and ten or less times, three or more times and eight or less times, or four or more times and six or less times the length D3 of the short side of the opening 24a of the recess 24.

[0049] The support 4 is disposed on the back surface 25 side of the magnetic member 2, opposite to the alignment surface 21. The support 4 is joined to the magnetic member 2. Examples of materials for the support 4 include non-magnetic metals, plastics, and rubber. Examples of the shape of the support 4 include a plate shape.

[0050] [Particle alignment method] Next, a particle alignment method according to this embodiment will be described. The particle alignment method according to this embodiment is a method for aligning conductive particles P having ferromagnetic properties using the particle alignment apparatus 1 described above.

[0051] As shown in FIGS. 1 to 3, in the particle alignment method, first, a particle supply step (S1) and a magnetic field application step (S2) are performed. Either the particle supply step (S1) or the magnetic field application step (S2) may be performed first, or they may be performed simultaneously. In the particle supply step (S1), conductive particles P are supplied onto the alignment surface 21 of the magnetic member 2. The supply of the conductive particles P onto the alignment surface 21 is performed, for example, by scattering the conductive particles P onto the alignment surface 21 from a particle supply device (not shown) arranged above the magnetic member 2. In the magnetic field application step (S2), a magnetic field is applied to the magnetic member 2. The application of the magnetic field to the magnetic member 2 is performed, for example, by arranging a first magnet 31 and a second magnet 32, which are a magnetic field application mechanism 3, in the vicinity of the magnetic member 2.

[0052] Then, a magnetic field along the alignment surface 21 of the magnetic member 2 (for example, a magnetic field parallel to the alignment surface 21) is applied to the magnetic member 2, and a leakage magnetic field is generated in each of the multiple recesses 24. Then, some of the conductive particles P supplied onto the alignment surface 21 are attracted by the leakage magnetic field generated in the multiple recesses 24, enter the multiple recesses 24, and are held in the multiple recesses 24. On the other hand, the conductive particles P that are not held in the multiple recesses 24 are made movable on the alignment surface 21.

[0053] In the particle alignment method, next, a particle removal step (S3) is performed. The particle removal step (S3) is performed after the particle supply step (S1) and the magnetic field application step (S2). In the particle removal step (S3), conductive particles P that are not held in the multiple recesses 24 are removed from the alignment surface 21. In the particle removal step (S3), for example, high-pressure gas is sprayed onto the alignment surface 21 while a magnetic field is applied to the magnetic member 2. The high-pressure gas can be sprayed onto the alignment surface 21 by, for example, a blower or other air blowing device (not shown).

[0054] Then, the conductive particles P that are not held in the plurality of recesses 24 are removed from the alignment surface 21. On the other hand, the conductive particles P that are held in the plurality of recesses 24 are maintained in the state of being held in the plurality of recesses 24. As a result, the conductive particles P are aligned on the magnetic member 2.

[0055] As described above, in the particle alignment device 1 according to the present embodiment, since the alignment surface 21 of the magnetic member 2 having magnetism has a plurality of recesses 24 formed thereon, when a magnetic field is applied to the magnetic member 2, a leakage magnetic field is generated in each of the plurality of recesses 24. Therefore, when the conductive particles P are supplied to the alignment surface 21 and a magnetic field is applied to the magnetic member 2, the conductive particles P supplied to the alignment surface 21 are attracted by the leakage magnetic field generated in the plurality of recesses 24 and enter the plurality of recesses 24, and are held in the plurality of recesses 24. Therefore, by spraying high-pressure gas onto the alignment surface 21 or sweeping the alignment surface 21 with a brush, the conductive particles P that are not held in the plurality of recesses 24 can be removed from the alignment surface 21 while maintaining the state in which the conductive particles P are held in the plurality of recesses 24. As a result, the conductive particles P are aligned to correspond to the plurality of recesses 24, and the alignment of the conductive particles P is improved.

[0056] Furthermore, in this particle alignment device 1, since the recesses 24 are regularly arranged, the conductive particles P can be regularly aligned.

[0057] Furthermore, in this particle alignment device 1, since the multiple recesses 24 are arranged in a mesh pattern, the conductive particles P can be aligned in a mesh pattern.

[0058] Furthermore, in this particle alignment device 1, since the multiple recesses 24 are through holes that penetrate the magnetic member 2, when the magnetic member 2 is thin, the multiple recesses 24 can be easily formed.

[0059] Furthermore, in this particle alignment device 1, the saturation magnetic flux density Bs of the magnetic member 2 is 0.5 T or more, 1.0 T or more, or 1.5 T or more, so that the force of holding the conductive particles P in the recesses 24 can be increased.

[0060] In addition, in this particle alignment device 1, when the recess 24 is a circular hole, the depth D1 of the recess 24 is at least 1 / 4, at least 1 / 3, or at least 1 / 2 times the diameter D2 of the opening 24a of the recess 24, thereby increasing the strength of the leakage magnetic field generated in the recess 24 to a degree that makes it easier to attract the conductive particles P to the recess 24.

[0061] Furthermore, in this particle alignment device 1, when the recesses 24 are circular holes, the spacing between multiple recesses 24 is at least two, three or four times the diameter D2 of the openings 24a of the recesses 24, thereby preventing the leakage magnetic fields from affecting each other between adjacent recesses 24 and preventing the aligned conductive particles P from becoming too crowded.

[0062] Furthermore, in this particle alignment device 1, the alignment surface 21 is subjected to a release treatment, so that the conductive particles P that are not held in the multiple recesses 24 can be easily removed from the alignment surface 21 by spraying high-pressure gas onto the alignment surface 21 or sweeping the alignment surface 21 with a brush.

[0063] Furthermore, in this particle alignment device 1, since the alignment surface 21 is a flat surface, the conductive particles P can be aligned easily.

[0064] Furthermore, in this particle alignment device 1, a support 4 supporting the magnetic member 2 is arranged on the back surface 25 side of the magnetic member 2, so that the alignment of the conductive particles P is ensured and the shape of the magnetic member 2 can be maintained even if the magnetic member 2 is thin.

[0065] Furthermore, since the particle alignment device 1 includes the magnetic field application mechanism 3 that applies a magnetic field to the magnetic member 2, the conductive particles P can be aligned without providing a separate mechanism for applying a magnetic field to the magnetic member 2.

[0066] In addition, in this particle alignment device 1, the magnetic field application mechanism 3 is configured to apply a magnetic field along the alignment surface 21 to the magnetic member 2, making it easier to retain the conductive particles P supplied to the alignment surface 21 in the multiple recesses 24.

[0067] Furthermore, in this particle alignment device 1, since the magnetic field application mechanism 3 has the first magnet 31 and the second magnet 32 ​​which are constituted by at least one of a permanent magnet and an electromagnet, it is possible to apply a magnetic field to the magnetic member 2 with a simple configuration.

[0068] Furthermore, in this particle alignment device 1, the first magnet 31 and the second magnet 32 ​​are arranged adjacent to the first side 22 and the second side 23 of the magnetic member 2, making it easier to align the magnetic field applied to the magnetic member 2 with the alignment surface 21.

[0069] In the particle alignment method according to the present embodiment, the conductive particles P are supplied onto the alignment surface 21 of the magnetic member 2, and a magnetic field is applied to the magnetic member 2 to remove the conductive particles P from the alignment surface 21, thereby making it possible to hold the conductive particles P in the multiple recesses 24 and to remove the conductive particles P not held in the multiple recesses 24 from the alignment surface 21. As a result, the conductive particles P are arranged in correspondence with the multiple recesses 24, improving the alignment of the conductive particles P.

[0070] In addition, in this particle alignment method, by spraying high-pressure gas onto the alignment surface 21 while a magnetic field is applied to the magnetic member 2, conductive particles P that are not held in the multiple recesses 24 can be easily removed from the alignment surface 21.

[0071] (Variation 1) Fig. 7 is a schematic cross-sectional view corresponding to Fig. 2, showing a modified particle alignment device. The modified particle alignment device 1A shown in Fig. 7 is basically the same as the particle alignment device 1 according to the above embodiment, and differs from the particle alignment device 1 according to the above embodiment only in that the magnetic member is thick, the multiple recesses are bottomed holes that do not penetrate the magnetic member, and no support is provided. The particle alignment device 1A includes a magnetic member 2A having magnetism, and a magnetic field application mechanism 3 (first magnet 31 and second magnet 32) that applies a magnetic field to the magnetic member 2.

[0072] The magnetic member 2A is made of a magnetic body and is formed to be thicker than the magnetic member 2. The magnetic member 2A has an alignment surface 21A, a first side surface 22A and a second side surface 23A corresponding to the alignment surface 21, the first side surface 22 and the second side surface 23 of the magnetic member 2. A plurality of recesses 24A are formed in the alignment surface 21A of the magnetic member 2A. The recesses 24A are bottomed holes that do not penetrate the magnetic member 2A.

[0073] When the recess 24A is a circular hole, the relationship between the depth of the recess 24A and the diameter of the opening of the recess 24A, and the relationship between the intervals between the plurality of recesses 24A and the diameter of the opening of the recess 24A can be the same as in the above embodiment. Similarly, when the recess 24A is a rectangular hole, the relationship between the depth of the recess 24A and the length of the short side of the opening of the recess 24A, and the relationship between the intervals between the plurality of recesses 24A and the length of the short side of the opening of the recess 24A can be the same as in the above embodiment.

[0074] The method for aligning the conductive particles P using the particle alignment apparatus 1A can be the same as the method for aligning the conductive particles P using the particle alignment apparatus 1.

[0075] As described above, in the particle alignment device 1A of the modified example, since the alignment surface 21A of the magnetic member 2A having magnetism has a plurality of recesses 24A formed thereon, when a magnetic field is applied to the magnetic member 2A, a leakage magnetic field is generated in each of the plurality of recesses 24A. Therefore, when the conductive particles P having ferromagnetic properties are supplied to the alignment surface 21A and a magnetic field is applied to the magnetic member 2A, the conductive particles P supplied to the alignment surface 21A are attracted by the leakage magnetic field generated in the plurality of recesses 24A and enter the plurality of recesses 24A, and are held in the plurality of recesses 24A. Therefore, by blowing high-pressure gas onto the alignment surface 21A or sweeping the alignment surface 21A with a brush, the conductive particles P that are not held in the plurality of recesses 24A can be removed from the alignment surface 21 while maintaining the state in which the conductive particles P are held in the plurality of recesses 24A. As a result, the conductive particles P are aligned to correspond to the plurality of recesses 24A, and the alignment of the conductive particles P is improved.

[0076] Furthermore, in this particle alignment device 1A, since the multiple recesses 24A are bottomed holes that do not penetrate the magnetic member 2A, the multiple recesses 24A can be easily formed when the magnetic member 2A is thick.

[0077] (Variation 2) Fig. 8 is a schematic plan view showing a modified particle alignment device. Fig. 9 is a schematic side view showing a modified particle alignment device. The modified particle alignment device 1B shown in Figs. 8 and 9 is basically the same as the particle alignment device 1 according to the above embodiment, and differs from the particle alignment device 1 according to the above embodiment only in that the magnetic member is formed in a cylindrical shape and further includes a demagnetization mechanism. The particle alignment device 1B includes a magnetic member 2B having magnetism, a magnetic field application mechanism 3B that applies a magnetic field to the magnetic member 2B, and a demagnetization mechanism 5B that demagnetizes the magnetic member 2B.

[0078] The magnetic member 2B is made of a magnetic material and is formed in a cylindrical shape that can rotate around the central axis A. The magnetic member 2B has an alignment surface 21B for aligning the conductive particles P, and a first side surface 22B and a second side surface 23B that are adjacent to the alignment surface 21B and extend in a direction intersecting the alignment surface 21B. The alignment surface 21B is formed by the outer peripheral surface of the magnetic member 2B. In other words, the alignment surface 21B is curved circumferentially. The first side surface 22B and the second side surface 23B are formed by both end surfaces of the magnetic member 2B. The alignment surface 21B is subjected to a release treatment.

[0079] A plurality of recesses 24B are formed on the alignment surface 21B of the magnetic member 2B. The shape, arrangement, etc. of the recesses 24B may be the same as, for example, the recesses 24 of the above embodiment.

[0080] The magnetic field application mechanism 3B is configured to apply a magnetic field along the alignment surface 21B of the magnetic member 2B and along the central axis A of the magnetic member 2B to the magnetic member 2B. The magnetic field application mechanism 3B has a first magnet 31B and a second magnet 32B. Each of the first magnet 31B and the second magnet 32B is configured with at least one of a permanent magnet and an electromagnet. The first magnet 31B is arranged adjacent to the first side surface 22B of the magnetic member 2B so that the N pole is arranged on the magnetic member 2B side. The second magnet 32B is arranged adjacent to the second side surface 23B of the magnetic member 2B so that the S pole is arranged on the magnetic member 2B side. Therefore, a magnetic field is generated in the magnetic member 2B from the first side surface 22B side toward the second side surface 23B side along the alignment surface 21B. The first magnet 31B and the second magnet 32B are formed in an arc shape so as to be along the alignment surface 21B of the magnetic member 2B.

[0081] The demagnetization mechanism 5B demagnetizes the magnetic member 2B, for example, after the magnetic field application mechanism 3B applies a magnetic field to the magnetic member 2B. The demagnetization of the magnetic member 2B by the demagnetization mechanism 5B can be performed, for example, by an AC demagnetization method. In the AC demagnetization method, an AC magnetic field is generated using an electromagnet, and the amplitude of the AC magnetic field generated by the electromagnet is gradually reduced to demagnetize the magnetic member. The demagnetization mechanism 5B has, for example, a first demagnetization member 51B and a second demagnetization member 52B. Each of the first demagnetization member 51B and the second demagnetization member 52B is configured to include an electromagnet capable of generating an AC magnetic field. The first demagnetization member 51B is disposed adjacent to the first side surface 22B of the magnetic member 2B. The second demagnetization member 52B is disposed adjacent to the second side surface 23B of the magnetic member 2B. The first demagnetizing member 51B and the second demagnetizing member 52B demagnetize the magnetic member 2B by applying an AC magnetic field to the magnetic member 2B along the alignment surface 21B. The first demagnetizing member 51B and the second demagnetizing member 52B are disposed in front of the first magnet 31B and the second magnet 32B in the rotation direction of the magnetic member 2B, and are formed in an arc shape along the alignment surface 21B of the magnetic member 2B.

[0082] When aligning the conductive particles P using the particle alignment device 1B, the particle supply step (S1), the magnetic field application step (S2), and the removal step (S3) similar to those of the particle alignment method according to the embodiment are performed while rotating the magnetic member 2B around the central axis A. Then, after the conductive particles P are aligned on the magnetic member 2B, the magnetic member 2B is demagnetized by the demagnetization mechanism 5B, and the conductive particles P held in the multiple recesses 24B are transferred to a film or the like.

[0083] As described above, in the particle alignment device 1B of the modified example, since the alignment surface 21B of the magnetic member 2B having magnetism has a plurality of recesses 24B formed thereon, when a magnetic field is applied to the magnetic member 2B, a leakage magnetic field is generated in each of the plurality of recesses 24B. Therefore, when the conductive particles P having ferromagnetic properties are supplied to the alignment surface 21B and a magnetic field is applied to the magnetic member 2B, the conductive particles P supplied to the alignment surface 21B are attracted by the leakage magnetic field generated in the plurality of recesses 24B and enter the plurality of recesses 24B, and are held in the plurality of recesses 24B. Therefore, by blowing high-pressure gas onto the alignment surface 21B or sweeping the alignment surface 21B with a brush, the conductive particles P that are not held in the plurality of recesses 24B can be removed from the alignment surface 21B while maintaining the state in which the conductive particles P are held in the plurality of recesses 24B. As a result, the conductive particles P are aligned to correspond to the plurality of recesses 24B, and the alignment of the conductive particles P is improved.

[0084] Furthermore, in this particle alignment apparatus 1B, since the alignment surface 21B is curved, it becomes easier to transfer the aligned conductive particles P onto a film or the like.

[0085] Moreover, in this particle alignment device 1B, the alignment surface 21B is formed by the outer peripheral surface of the cylindrically formed magnetic member 2B, so that it is possible to continuously supply the conductive particles P to the alignment surface 21B and align the conductive particles P by applying a magnetic field to the magnetic member 2B by rotating the magnetic member 2B around the central axis A. In addition, it becomes easier to transfer the aligned conductive particles P to a film or the like.

[0086] In addition, since the particle alignment device 1B includes a demagnetization mechanism 5B that demagnetizes the magnetic member 2B, after a magnetic field is applied to the magnetic member 2B to align the conductive particles P, the state in which the conductive particles P are held in the multiple recesses 24B can be released by demagnetizing the magnetic member 2B with the demagnetization mechanism 5B. This makes it possible to easily transfer the conductive particles P held in the multiple recesses 24B to a film or the like.

[0087] In the above-mentioned embodiment and modified example, the magnetic field application mechanism has been described as being composed of two magnets, but for example, the magnetic field application mechanism 3C may be composed of one magnet 33C as in a particle alignment device 1C shown in Fig. 10. Even in such a configuration, the magnetic field application mechanism 3C can apply a magnetic field to the magnetic member 2C and can apply a magnetic field along the alignment surface 21 of the magnetic member 2C to the magnetic member 2C.

[0088] In the above-mentioned embodiment and modified example, the magnet constituting the magnetic field application mechanism has been described as being disposed adjacent to the side surface of the magnetic member, but for example, as in a particle alignment device 1D shown in Fig. 11, a magnet 34D constituting a magnetic field application mechanism 3D may be disposed on the alignment surface 21 of the magnetic member 2D. Even in such a configuration, the magnetic field application mechanism 3D can apply a magnetic field to the magnetic member 2D and can apply a magnetic field along the alignment surface 21 of the magnetic member 2D to the magnetic member 2D.

[0089] In the above-mentioned embodiment and modified example, the magnetic field application mechanism has been described as having a constant magnitude and direction of the magnetic field applied to the magnetic member. However, for example, the magnetic field application mechanism may have an adjustment mechanism that changes at least one of the magnitude and direction of the magnetic field applied to the magnetic member. For example, a device that adjusts the current supplied to the electromagnet constituting the magnetic field application mechanism, a device that moves the permanent magnet constituting the magnetic field application mechanism, etc. can be used as such an adjustment mechanism. In addition, when the adjustment mechanism is a device that adjusts the current supplied to the electromagnet constituting the magnetic field application mechanism, for example, a constant current power supply can be used to adjust the current flowing through the coil of the electromagnet. In this way, by having an adjustment mechanism that changes at least one of the magnitude and direction of the magnetic field applied by the magnetic field application mechanism to the magnetic member, the conductive particles can be properly aligned even if the size, etc. of the conductive particles to be aligned changes.

[0090] [film] Next, the film according to the present embodiment will be described with reference to FIG. 12 and FIG. 13. The film according to the present embodiment is a film manufactured using the particle alignment device described above. FIG. 12 is a schematic plan view showing the film according to the embodiment. FIG. 13 is a schematic cross-sectional view taken along line XIII-XIII shown in FIG. 12. As shown in FIG. 12 and FIG. 13, the film 101 according to the present embodiment includes a base film 102 and conductive particles P aligned on the base film 102. The base film 102 has, for example, a support layer 103 and an adhesive layer 104 arranged on the support layer 103, and the conductive particles P are adhered to the adhesive layer 104. The support layer 103 is a layer for imparting appropriate rigidity to the base film 102. The adhesive layer 104 is a layer for fixing the conductive particles P to the base film 102. The conductive particles P are regularly arranged. The conductive particles P are arranged, for example, in a mesh or checkerboard pattern (lattice pattern).

[0091] [Film manufacturing method] Next, a method for producing a film according to an embodiment will be described with reference to Fig. 14. The method for producing a film according to this embodiment is a method for producing a film 101 shown in Figs. 12 and 13 using the particle alignment device 1B (see Figs. 8 and 9) described above. Fig. 14 is a schematic side view for explaining the method for producing a film according to this embodiment. As shown in Fig. 14, in the method for producing a film according to this embodiment, first, an alignment step (S10) is performed in which conductive particles P are aligned on an alignment surface 21B, and then a transfer step (S20) is performed in which the conductive particles P aligned in the alignment step (S10) are transferred onto a base film 102.

[0092] In the alignment step (S10), a particle supply step (S11) and a magnetic field application step (S12) are performed while rotating the magnetic member 2B about the central axis A, and then a particle removal step (S13) is performed.

[0093] In the particle supplying step (S11), conductive particles P are supplied onto the alignment surface 21B of the magnetic member 2B while rotating the magnetic member 2B around the central axis A. The supply of the conductive particles P onto the alignment surface 21B is performed, for example, by scattering the conductive particles P onto the alignment surface 21B from a particle supplying device 111 arranged above the magnetic member 2. The particle supplying device 111 can be configured, for example, by a belt conveyor 112 arranged above the magnetic member 2, and a hopper 113 arranged above the belt conveyor 112 to drop a predetermined amount of conductive particles P.

[0094] In the magnetic field application step (S12), a magnetic field is applied to the magnetic member 2B while rotating the magnetic member 2B around the central axis A. The magnetic field is applied to the magnetic member 2B, for example, by arranging a first magnet 31B and a second magnet 32B, which are a magnetic field application mechanism 3B, in the vicinity of the magnetic member 2B.

[0095] Then, a magnetic field is applied to the magnetic member 2B along the alignment surface 21B of the magnetic member 2B and along the central axis A of the magnetic member 2B, and a leakage magnetic field is generated in each of the recesses 24B. Then, some of the conductive particles P supplied onto the alignment surface 21B are attracted by the leakage magnetic field generated in the recesses 24B and enter the recesses 24B, and are held in the recesses 24B. On the other hand, the conductive particles P that are not held in the recesses 24B are movable on the alignment surface 21B.

[0096] In the particle removal step (S13), the conductive particles P that are not held in the multiple recesses 24B are removed from the alignment surface 21B while rotating the magnetic member 2B around the central axis A. In the particle removal step (S13), for example, high-pressure gas is blown onto the alignment surface 21B while a magnetic field is applied to the magnetic member 2B. The high-pressure gas can be blown onto the alignment surface 21B by, for example, a blower or other air blowing device (not shown).

[0097] In the transfer step (S20), the magnetic member 2B is demagnetized while rotating the magnetic member 2B around the central axis A, and the conductive particles P aligned in the alignment step (S10) are transferred onto the base film 102. The magnetic member 2B is demagnetized, for example, by arranging a first demagnetizing member 51B and a second demagnetizing member 52B, which are the demagnetization mechanism 5B, in the vicinity of the magnetic member 2B in front of the first magnet 31B and the second magnet 32B in the rotation direction of the magnetic member 2B. The conductive particles P are transferred onto the base film 102 by, for example, conveying the base film 102 between the first demagnetizing member 51B and the second demagnetizing member 52B so that the base film 102 comes into contact with the conductive particles P held in the recesses 24B of the magnetic member 2B.

[0098] Then, the conductive particles P are released from the recesses 24B, and the conductive particles P that were held in the recesses 24B are transferred onto the base film 102. In this way, the film 101 is manufactured on the base film 102, on which the conductive particles P are aligned.

[0099] As described above, in film 101 according to this embodiment, conductive particles P are aligned on base film 102, and therefore the alignment of conductive particles P is improved.

[0100] Furthermore, in this film 101, since the base film 102 has the adhesive layer 104 disposed on the support layer 103, the conductive particles P can be easily disposed on the base film 102 during the production of the film 101. As described above, in the film manufacturing method of this embodiment, by transferring the conductive particles P aligned on the alignment surface 21B of the magnetic member 2B onto the base film 102, it is possible to arrange the aligned conductive particles P on the base film 102 and to improve the alignment of the conductive particles P.

[0101] Furthermore, in this film manufacturing method, by demagnetizing the magnetic member 2B, the conductive particles P are released from the recesses 24B, so that the conductive particles P can be easily transferred onto the base film 102.

[0102] The particle alignment device used in the film manufacturing method is not limited to the particle alignment device 1B shown in FIGS. 8 and 9, and may be another particle alignment device.

[0103] The particle alignment device according to the present disclosure is not limited to the above-described embodiment, and can be modified as appropriate without departing from the spirit of the present disclosure.

[0104] The gist of this disclosure is as follows: [1] to

[25] [1] A particle alignment device comprising a magnetic member having magnetism, the magnetic member having an alignment surface for aligning conductive particles and a plurality of recesses formed on the alignment surface. [2] The particle alignment device according to [1], wherein the plurality of recesses are regularly arranged. [3] The particle alignment device according to [1], wherein the plurality of recesses are arranged in a mesh pattern. [4] The particle alignment device according to any one of [1] to [3], wherein the plurality of recesses are through holes penetrating the magnetic member. [5] The particle alignment device according to any one of [1] to [3], wherein the plurality of recesses are bottomed holes that do not penetrate the magnetic member. [6] The particle alignment device according to any one of [1] to [5], wherein the magnetic member has a saturation magnetic flux density of 0.5 T or more. [7] The particle alignment device described in any one of [1] to [6], wherein when the recess is a circular hole, the depth of the recess is 1 / 4 or more the diameter of the opening of the recess. [8] The particle alignment device described in any one of [1] to [7], wherein when the recesses are circular holes, the spacing between the multiple recesses is at least twice the diameter of the openings of the recesses. [9] The particle alignment device according to any one of [1] to [8], wherein the alignment surface is subjected to a release treatment.

[10] The particle alignment device described in any one of [1] to [9], wherein the alignment surface is a flat surface.

[11] The particle alignment device according to any one of [1] to

[10] , wherein the alignment surface is curved.

[12] A particle alignment device described in any one of [1] to

[11] , wherein the magnetic member is formed in a cylindrical shape that can rotate around a central axis, and the alignment surface is formed by the outer peripheral surface of the magnetic member.

[13] The particle alignment device described in any one of [1] to

[12] , further comprising a support arranged on a back side of the magnetic member opposite the alignment surface, and supporting the magnetic member.

[14] The particle alignment device described in any one of [1] to

[13] , further comprising a magnetic field application mechanism that applies a magnetic field to the magnetic member.

[15] The particle alignment device described in

[14] , wherein the magnetic field application mechanism is configured to apply a magnetic field along the alignment surface to the magnetic member.

[16] The particle alignment device described in

[14] or

[15] , wherein the magnetic field application mechanism has a magnet composed of at least one of a permanent magnet and an electromagnet.

[17] The particle alignment device described in

[16] , wherein the magnetic member has a side surface adjacent to the alignment surface and extending in a direction intersecting the alignment surface, and the magnet is arranged adjacent to the side surface of the magnetic member.

[18] The particle alignment device according to any one of

[14] to

[17] , further comprising a demagnetization mechanism for demagnetizing the magnetic member.

[19] The particle alignment device described in any one of

[15] to

[18] , wherein the magnetic field application mechanism has an adjustment mechanism that changes at least one of the magnitude and direction of the magnetic field applied to the magnetic member.

[20] A particle alignment method for aligning conductive particles using a particle alignment device described in any one of [1] to

[19] , comprising a particle supply step of supplying conductive particles onto the alignment surface of the magnetic member, a magnetic field application step of applying a magnetic field to the magnetic member, and a particle removal step of removing the conductive particles from the alignment surface.

[21] The particle alignment method according to

[20] , wherein in the particle removal step, high-pressure gas is sprayed onto the alignment surface while a magnetic field is applied to a magnetic member.

[22] A film comprising a base film and conductive particles aligned on the base film.

[23] The film described in

[22] , wherein the base film has a support layer and an adhesive layer disposed on the support layer, and the conductive particles are adhered to the adhesive layer.

[24] A film manufacturing method for manufacturing a film having conductive particles aligned on a base film using a particle alignment device described in any one of [1] to

[19] , comprising an alignment step of aligning conductive particles on the alignment surface of the magnetic member, and a transfer step of transferring the conductive particles aligned in the alignment step onto the base film, wherein the alignment step includes a particle supply step of supplying conductive particles onto the alignment surface of the magnetic member, a magnetic field application step of applying a magnetic field to the magnetic member, and a particle removal step of removing the conductive particles from the alignment surface. A film manufacturing method for producing the film described in

[22] or

[23] , comprising an alignment step of aligning conductive particles on the alignment surface of the magnetic member by the particle alignment method described in claim 20 or 21, and a transfer step of transferring the conductive particles aligned in the alignment step onto the base film.

[25] The film manufacturing method described in

[24] , in which, in the transfer step, the magnetic member is demagnetized and the conductive particles aligned in the alignment step are transferred onto the base film. [Explanation of symbols]

[0105] 1...particle alignment device, 1A...particle alignment device, 1B...particle alignment device, 1C...particle alignment device, 1D...particle alignment device, 2...magnetic member, 2A...magnetic member, 2B...magnetic member, 2C...magnetic member, 2D...magnetic member, 3...magnetic field application mechanism, 3B...magnetic field application mechanism, 3C...magnetic field application mechanism, 3D...magnetic field application mechanism, 4...support, 5B...demagnetization mechanism, 21...alignment surface, 21A...alignment surface, 21B...alignment surface, 22...first side, 22B...first side, 23...second side, 23B...second side, 24...recess, 24A...recess, 24 B...recess, 24a...opening, 24b...first hole, 24c...second hole, 24d...connection port, 25...rear side, 31...first magnet, 31B...first magnet, 32...second magnet, 32B...second magnet, 33C...magnet, 34D...magnet, 51B...first demagnetizing member, 52B...second demagnetizing member, 101...film, 102...base film, 103...support layer, 104...adhesive layer, 111...particle supplying device, 112...belt conveyor, 113...hopper, A...central axis, P...conductive particles.

Claims

1. A magnetic member having magnetism is provided, The magnetic member has an alignment surface for aligning conductive particles and a plurality of recesses formed on the alignment surface. Particle alignment device.

2. The plurality of recesses are regularly arranged. The particle alignment apparatus according to claim 1 .

3. The plurality of recesses are arranged in a mesh pattern. The particle alignment apparatus according to claim 1 .

4. The plurality of recesses are through holes penetrating the magnetic member. The particle alignment apparatus according to claim 1 .

5. The plurality of recesses are bottomed holes that do not penetrate the magnetic member. The particle alignment apparatus according to claim 1 .

6. The saturation magnetic flux density of the magnetic member is 0.5 T or more. The particle alignment apparatus according to claim 1 .

7. When the recess is a circular hole, the depth of the recess is equal to or greater than ¼ of the diameter of the opening of the recess. The particle alignment apparatus according to claim 1 .

8. When the recesses are circular holes, the intervals between the plurality of recesses are equal to or greater than twice the diameter of the openings of the recesses. The particle alignment apparatus according to claim 1 .

9. The alignment surface is release-treated. The particle alignment apparatus according to claim 1 .

10. The alignment surface is a plane. The particle alignment apparatus according to claim 1 .

11. The alignment surface is curved. The particle alignment apparatus according to claim 1 .

12. The magnetic member is formed in a cylindrical shape that is rotatable about a central axis, The alignment surface is formed by an outer circumferential surface of the magnetic member. The particle alignment apparatus according to claim 1 .

13. The magnetic member further includes a support disposed on a back surface side opposite to the alignment surface of the magnetic member and supporting the magnetic member. The particle alignment apparatus according to claim 1 .

14. Further comprising a magnetic field application mechanism for applying a magnetic field to the magnetic member. The particle alignment apparatus according to claim 1 .

15. The magnetic field application mechanism is configured to apply a magnetic field along the alignment surface to the magnetic member. The particle alignment apparatus of claim 14.

16. The magnetic field application mechanism has a magnet constituted by at least one of a permanent magnet and an electromagnet. The particle alignment apparatus of claim 14.

17. the magnetic member has a side surface adjacent to the alignment surface and extending in a direction intersecting the alignment surface, The magnet is disposed adjacent to the side surface of the magnetic member. The particle alignment apparatus of claim 16.

18. The magnetic recording medium further includes a demagnetizing mechanism for demagnetizing the magnetic member. The particle alignment apparatus of claim 14.

19. the magnetic field application mechanism has an adjustment mechanism that changes at least one of the magnitude and direction of the magnetic field applied to the magnetic member; The particle alignment apparatus of claim 15.

20. A particle alignment method for aligning conductive particles using the particle alignment apparatus according to any one of claims 1 to 19, comprising: a particle supplying step of supplying conductive particles onto the alignment surface of the magnetic member; a magnetic field application step of applying a magnetic field to the magnetic member; and removing the conductive particles from the alignment surface. Particle alignment methods.

21. In the particle removal step, a high-pressure gas is blown onto the alignment surface while a magnetic field is applied to the magnetic member. The method for aligning particles according to claim 20.

22. A base film; and conductive particles aligned on the base film. film.

23. The base film has a support layer and an adhesive layer disposed on the support layer, The conductive particles are adhered to the adhesive layer.

23. The film of claim 22.

24. A film manufacturing method for manufacturing a film having conductive particles aligned on a substrate film by using the particle alignment device according to any one of claims 1 to 19, comprising: an alignment step of aligning conductive particles on the alignment surface of the magnetic member; a transfer step of transferring the conductive particles aligned in the alignment step onto the base film, The alignment step includes: a particle supplying step of supplying conductive particles onto the alignment surface of the magnetic member; a magnetic field application step of applying a magnetic field to the magnetic member; a particle removal step of removing the conductive particles from the alignment surface; having Film manufacturing method.

25. In the transfer step, the magnetic member is demagnetized, and the conductive particles aligned in the alignment step are transferred onto the base film.

25. The method of claim 24.

Images