Film deposition apparatus, mask, film deposition method, and manufacturing method of electronic device

Abstract

To provide a technology capable of enhancing the adhesion between a substrate and a mask even in a case of the mask having a low-stiffness part.SOLUTION: A film deposition apparatus deposits a film on a substrate through a mask. The mask has: a pattern part in which a predetermined pattern is formed; a frame part for supporting the pattern part; and a magnetic body arranged on the pattern part. The film deposition apparatus has magnetic adsorption means that is arranged facing the mask through the substrate and adsorbs the magnetic body.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus, a mask, a film forming method, and a method for manufacturing an electronic device. [Background technology]

[0002] There is known a technique in which a substrate and a mask are aligned, and then a film is formed on the substrate through the mask. The film is formed in a state in which the aligned substrate and mask are in close contact with each other. There is known a technique that utilizes magnetic force to bring the substrate and mask into close contact with each other. For example, the substrate is placed between the mask and a magnet plate, and the substrate and mask are brought into close contact with each other by the magnetic force between the mask and the magnet plate (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2017 / 222009 Brochure Summary of the Invention [Problem to be solved by the invention]

[0004] A pattern portion of a mask for forming a pattern on a substrate may have a lower rigidity than a frame portion that supports the pattern portion. When the mask includes a portion with a lower rigidity, the adhesion between the substrate and the mask may decrease.

[0005] The present invention provides a technique capable of improving the adhesion between a substrate and a mask even when the mask includes a portion with low rigidity. [Means for solving the problem]

[0006] According to the present invention, A film forming apparatus for forming a film on a substrate through a mask, The mask comprises: A pattern portion on which a predetermined pattern is formed; A frame portion supporting the pattern portion; A magnetic body provided in the pattern portion, The film forming apparatus a magnetic attraction means disposed opposite to the mask via the substrate and attracting the magnetic material; The present invention provides a film forming apparatus. Effect of the Invention

[0007] According to the present invention, even when the mask includes a portion with low rigidity, it is possible to improve the adhesion between the substrate and the mask. [Brief description of the drawings]

[0008] [Figure 1] Schematic diagram of a part of a manufacturing line for electronic devices. [Diagram 2] 1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. [Diagram 3] FIG. [Figure 4] 3(A) is a cross-sectional view taken along line AA in FIG. 3, and FIG. 4(B) is a view taken in the direction of arrow B in FIG. 4(A). [Diagram 5] An enlarged portion of Figure 2. [Figure 6] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 7] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 8] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 9] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 10] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 11] 4A to 4C are plan views showing examples of the arrangement of magnetic bodies. [Figure 12] 3A and 3B are a perspective view and a partially enlarged view of a mask. [Figure 13] FIG. 4 is a diagram showing a configuration example of a magnetic attraction unit. [Figure 14] (A) is an overall view of an organic EL display device, and (B) is a diagram showing the cross-sectional structure of one pixel. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] First Embodiment <Electronic device manufacturing line> FIG. 1 is a schematic diagram showing a part of the configuration of an electronic device manufacturing line 100 to which the film forming apparatus of the present invention can be applied. In each drawing, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates a vertical direction (gravity direction). The manufacturing line of FIG. 1 is used, for example, for manufacturing light emitting elements of an organic EL display device. The manufacturing line 100 includes a transfer chamber 102 having an octagonal shape in a plan view. A substrate 2 is carried into the transfer chamber 102 from a transfer path 101a, and the substrate 2 on which a film has been formed is carried out from the transfer chamber 102 to a transfer path 101b.

[0011] A plurality of film formation devices 1 for performing film formation processing on a substrate 2 are arranged around the transfer chamber 102. A transfer chamber 103 is arranged adjacent to each film formation device 1. A storage chamber 104 for storing a mask 3 is arranged around the transfer chamber 103, which has an octagonal shape in a plan view.

[0012] A transport unit 105 for transporting the substrate 2 is disposed in the transport chamber 102. The transport unit 105 in this embodiment is a horizontal articulated robot, and transports the substrate 2 by mounting it in a horizontal position on its hand. The transport unit 105 performs a transport-in operation for transporting the substrate 2 transported from the transport path 101a to the film formation apparatus 1, and a transport-out operation for transporting the substrate 2, on which a film has been formed in the film formation apparatus 1, from the film formation chamber 1 to the transport path 101b.

[0013] A transport unit 106 for transporting the mask 3 is disposed in each transport chamber 103. The transport unit 106 in this embodiment is a horizontal articulated robot, and transports the mask 3 mounted in a horizontal position on its hand. The transport unit 106 transports the mask 3 from the storage chamber 104 to the film formation apparatus 1 and transports the mask 3 from the film formation apparatus 1 to the storage chamber 104.

[0014] <Film forming equipment> 2 is a schematic diagram of a film forming apparatus 1 according to one embodiment of the present invention. The film forming apparatus 1 is an apparatus for forming a film of a deposition material on a substrate 2, and forms a thin film of the deposition material in a predetermined pattern using a mask 3. The material of the substrate 2 on which a film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. Particularly in this embodiment, the substrate 2 is, for example, a glass substrate on which TFTs (Thin Film Transistors) are formed, or a semiconductor wafer (silicon wafer) on which semiconductor elements are formed.

[0015] The deposition material may be an organic material or an inorganic material (metal, metal oxide, etc.). The film forming apparatus 1 is applicable to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and optical components, and is particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example will be described in which the film forming apparatus 1 forms a film on the substrate 2 by vacuum deposition, but the present invention is not limited thereto, and various film forming methods such as sputtering, CVD, and ALD can be applied.

[0016] The film forming apparatus 1 has a box-shaped vacuum chamber 10. The internal space of the vacuum chamber 10 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 10 is connected to a vacuum pump (not shown). A deposition unit 17 is disposed in the internal space of the vacuum chamber 10. The deposition unit 17 includes a deposition source that discharges a deposition material upward. A shutter 17a that restricts and releases the discharge of the deposition material is disposed above the deposition unit 17. The shutter 17a is opened and closed by an opening / closing mechanism (not shown). FIG. 2 shows a case where the shutter 17a is in a closed state, and the discharge of the deposition material by the deposition unit 17 is restricted. An adhesion prevention plate 10b is also disposed above the deposition unit 17. The adhesion prevention plate 10b prevents the deposition material from unnecessarily adhering to the following components disposed in the upper part of the internal space of the vacuum chamber 10.

[0017] A substrate support plate 11 that supports the substrate 2 in a horizontal position is provided in the internal space of the vacuum chamber 10. In this embodiment, the substrate support plate 11 is an electrostatic chuck that attracts and holds the substrate 2 on its lower surface by electrostatic force. A cooling plate 12 is fixed onto the substrate support plate 11. The cooling plate 12 is equipped with, for example, a water cooling mechanism, and cools the substrate 2 via the substrate support plate 11 during film formation.

[0018] The substrate support plate 11 and the cooling plate 12 are suspended from the magnetic attraction portion 13 via the support portion 13a so as to be displaceable in the Z direction. The magnetic attraction portion 13 is a member that attracts the mask 3 by magnetic force. The magnetic attraction portion 13 is disposed at a position facing the mask with the substrate 2 interposed therebetween. During film formation, the substrate 2 is sandwiched between the magnetic attraction portion 13 and the mask 3 by magnetic force, so that the adhesion between the substrate 2 and the mask 3 can be improved.

[0019] The film forming apparatus 1 includes a mask support unit 14 that supports the mask 3 during film formation. In this embodiment, the mask support unit 14 also transfers the substrate 2 between the transport unit 121 and the substrate support plate 11. The mask support unit 14 includes a pair of support members 14a spaced apart in the X direction. Each support member 14a is raised and lowered by a corresponding actuator 14b. In this embodiment, an actuator 14b is provided for each support member 14a, but the pair of support members 14a may be raised and lowered by one actuator 14b. The actuator 14b is, for example, an electric cylinder or an electric ball screw mechanism. The support member 14a includes a claw portion F1 at its lower end. The peripheral portion of the substrate 2 or the mask 3 is placed on the claw portion F1. In the example of FIG. 2, the mask 3 is placed on the claw portion F1. The pair of support members 14a are raised and lowered synchronously to raise and lower the substrate 2 or the mask 3. The claw portion F1 may have a mechanism for releasably holding the mask 3.

[0020] The film forming apparatus 1 includes an alignment unit 15 that aligns the substrate 2 and the mask 3. The alignment unit 15 includes a driving mechanism 150 and a plurality of measurement units SR. The driving mechanism 150 includes a distance adjustment unit 151, a support shaft 152, a stand 153, and a position adjustment unit 154.

[0021] The distance adjustment unit 151 is a mechanism for raising and lowering the support shaft 152 in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism. A magnetic attraction part 13 is fixed to the lower end of the support shaft 152, and the substrate support plate 11 is raised and lowered via the magnetic attraction part 13 by raising and lowering the support shaft 152. By raising and lowering the substrate support plate 11, the distance between the substrate 2 and the mask 3 is adjusted, and the substrate 2 and the mask 3 supported by the substrate support plate 11 are brought closer to each other and separated from each other in the thickness direction (Z direction) of the substrate 2. In other words, the distance adjustment unit 151 brings the substrate 2 and the mask 3 closer to each other in the overlapping direction, and separates them in the opposite direction. The "distance" adjusted by the distance adjustment unit 151 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit 151 can also be said to be a unit for adjusting the vertical position of the substrate 2. The distance adjustment unit 151 is mounted on the position adjustment unit 154 via a stand 153.

[0022] The position adjustment unit 154 adjusts the relative position of the substrate 2 with respect to the mask 3 by displacing the substrate support plate 11 on the XY plane. That is, the position adjustment unit 150 can also be said to be a unit that adjusts the horizontal positions of the mask 3 and the substrate 2. The position adjustment unit 80 can displace the substrate support plate 11 in a rotational direction (θ direction) around the X-, Y-, and Z-axis. In this embodiment, the position of the mask 3 is fixed and the substrate 2 is displaced to adjust their relative positions, but the mask 3 may also be displaced to adjust them, or both the substrate 2 and the mask 3 may be displaced.

[0023] The position adjustment unit 154 includes a fixed plate 154a and a movable plate 154b. The fixed plate 154a and the movable plate 154b are rectangular frame-shaped plates, and the fixed plate 154a is fixed on the upper wall portion 10a of the vacuum chamber 10. An actuator is provided between the fixed plate 154a and the movable plate 154b for displacing the movable plate 154b in the X-direction, Y-direction, and rotational directions around the Z-direction axes relative to the fixed plate 154a.

[0024] A frame-shaped stand 153 is mounted on the movable plate 154b, and a distance adjustment unit 151 is supported on the stand 153. When the movable plate 84b is displaced, the stand 153 and the distance adjustment unit 151 are displaced together. This allows the substrate 2 to be displaced in the rotational directions around the axes in the X-, Y-, and Z-directions. The upper wall 10a is formed with openings through which the support shaft 152 and the support members 14a and 14b pass. These openings are sealed by sealing members (such as bellows) not shown, and the vacuum chamber 10 is kept airtight.

[0025] The measurement unit SR measures the positional deviation between the substrate 2 and the mask 3. In this embodiment, the measurement unit SR is an imaging device (camera) that captures an image. The measurement unit SR is disposed on the upper wall portion 20, and is capable of capturing an image inside the vacuum chamber 10. Alignment marks (not shown) are formed on the substrate 2 and the mask 3, respectively. The measurement unit SR captures images of each alignment mark of the substrate 2 and the mask 3. The amount of positional deviation between the substrate 2 and the mask 3 is calculated based on the position of each alignment mark, and the position adjustment unit 154 adjusts the relative positions of the substrate 2 and the mask 3 to eliminate the amount of positional deviation.

[0026] The control device 16 controls the entire film forming apparatus 1. The control device 16 includes a processing unit 160, a storage unit 161, an input / output interface (I / O) 162, and a communication unit 163. The processing unit 160 is a processor such as a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 162. The storage unit 161 is a storage device such as a ROM, a RAM, or a HDD, and stores various types of control information in addition to the program executed by the processing unit 160. The I / O 162 is an interface that transmits and receives signals between the processing unit 160 and an external device. The communication unit 163 is a communication device that communicates with a higher-level device or other control devices via a communication line.

[0027] <Example of magnetic attraction part, substrate, and mask configuration> FIG. 3 shows an example of the magnetic attraction part 13, the substrate 2, and the mask 3 in this embodiment. The magnetic attraction part 13 is a circular magnet plate. The magnetic attraction part 13 may be, for example, an electromagnet. The magnetic attraction part 13 has a plurality of openings 130. In this embodiment, each opening 130 penetrates the magnetic attraction part 13 in the thickness direction. The plurality of openings 130 have a shape corresponding to a frame part 31 of the mask 3 described later. That is, in this embodiment, the magnetic attraction part 13 is formed in a lattice shape.

[0028] The substrate 2 is a circular silicon wafer, and after film formation, etc., a plurality of chips 2a are cut out from the substrate 2. In the illustrated example, it is assumed that a matrix pattern of a plurality of pixels of a predetermined color (e.g., red, blue, or green) is formed by the film formation device 1 for each chip 2a.

[0029] The mask 3 is a circular member similar to the substrate 2. The mask 3 is made of a non-magnetic material such as silicon (Si). By using the silicon mask 3, the openings 303 can be formed finely and precisely by applying semiconductor manufacturing technology.

[0030] The mask 3 has a pattern portion 30 in which a predetermined pattern is formed, and a frame portion 31 that supports the pattern portion 30. A plurality of pattern portions 30 are formed on the mask 3. In this embodiment, the frame portion 31 is formed in a lattice shape surrounding each of the plurality of pattern portions 30. The frame portion 31 may be formed in a predetermined shape based on the shape of the chip 2a cut out from the above-mentioned substrate 2, for example. In other words, the frame portion 31 may be shaped to match the scribe line of the substrate 2.

[0031] The mask 3 will be described with reference to Figs. 4(A) and 4(B). Fig. 4(A) is a cross-sectional view taken along line AA in Fig. 3. As shown in Fig. 4(A), the frame portion 31 is a relatively thick portion, and the pattern portion 30 is a relatively thin portion. The frame portion 31 has higher rigidity than the pattern portion 30. This allows the pattern portion 30 to be formed thin without significantly reducing the overall rigidity of the mask 3.

[0032] The pattern section 30 is provided with a magnetic body 32. The magnetic body 32 may be a thin film of a magnetic material. The magnetic material may be, for example, iron (Fe), cobalt (Co), or nickel (Ni). By providing the magnetic body 32 in the pattern section 30, even if the mask 3 is made of silicon, which is a non-magnetic material, the mask 3 and the substrate 2 can be brought into close contact with each other during film formation by the magnetic force of the magnetic attraction section 13. As described above, the pattern section 30 is also a relatively thin-walled section. In other words, the pattern section 30 is also a section that is less rigid than the frame section. The less rigid portion of the mask 3 is also a section that is easily loosened and is easily prone to a decrease in adhesion between the mask 3 and the substrate 2. Therefore, by providing the magnetic body 32 in the pattern section 30, the adhesion between the substrate 2 and the mask 3 can be improved. By increasing the adhesion between the substrate 2 and the mask 3, the deposition material that passes through the opening 303 can be accurately deposited on the desired portion of the substrate 101.

[0033] In the present embodiment, the magnetic body 32 is provided on the lower surface S2 side of the mask 3, but this is not limiting. The magnetic body 32 may be provided on the upper surface S1 side of the mask 3, for example. Alternatively, the magnetic body 32 may be provided on both the lower surface S2 side and the upper surface S1 side of the mask 3. The lower surface S2 of the mask 3 is the surface of the mask 3 on the deposition unit 17 side, and is also the surface of the mask 3 opposite to the substrate 2 side. The upper surface S1 of the mask 3 is the surface of the mask 3 on the substrate 2 side.

[0034] FIG. 4(B) shows a plan view of the pattern portion 30 in this embodiment. FIG. 4(B) corresponds to a view seen from the direction of the arrow B in FIG. 4(A), and is also a view showing an example of each of the multiple pattern portions 30. As shown in FIG. 4(B), the pattern portion 30 is formed in a rectangular shape in a plan view of the mask 3. The pattern portion 30 includes a pattern region 300 and a peripheral region 301 surrounding the pattern region 300. The pattern region 300 has multiple openings (through holes) 303 through which the deposition material to be deposited on the substrate 2 passes. The deposition pattern on the substrate 2 is defined by the arrangement of the openings 303. The multiple openings 303 form a matrix pattern. In other words, the pattern region 300 is also a portion where the multiple openings 303 are gathered.

[0035] In this embodiment, the magnetic body 32a is provided in the peripheral portion 301a in the X direction of the peripheral region 301. The magnetic body 32a is formed along the peripheral portion 301a. In addition, the magnetic body 32b is also provided in the peripheral portion 301b facing the peripheral portion 301a. The magnetic body 32b is formed along the peripheral portion 301b. In other words, the peripheral portions 301a and 301b are also side portions of the pattern portion 30. By providing the magnetic body 32 at two opposing positions in the peripheral region 301, it is possible to apply tension to the pattern portion 30 by the magnetic attraction portion 13 as shown in FIG. 5 described later. Therefore, even if the mask 3 has a portion with low rigidity like the pattern portion 30, it is possible to further increase the adhesion between the mask 3 and the substrate 2.

[0036] With reference to FIG. 5, a case where the mask 3 is brought into close contact with the substrate 2 by the magnetic force of the magnetic attraction portion 13 will be described. FIG. 5 is also a partially enlarged view of FIG. 2. FIG. 5 shows a state where the substrate 2 is supported by the substrate support plate 11 and the mask 3 is brought into close contact with the substrate 2 by the magnetic force of the magnetic attraction portion 13. In this embodiment, as described above, the magnetic attraction portion 13 has an opening 130 corresponding to the shape of the frame portion 31. That is, it can be said that the magnetic attraction portion 13 has an opening 130 between the magnetic body 32a and the magnetic body 32b provided in the peripheral region 301 of the mask 3. The magnetic attraction portion 13 includes an attraction portion 130a that is disposed outside the magnetic body 32a and attracts the magnetic body 32a, and an attraction portion 130b that is disposed outside the magnetic body 32b and attracts the magnetic body 32b. As a result, the magnetic bodies 30a and 30b provided in the peripheral region 301 of the pattern portion 30 are attracted in the directions of the arrows (D1, D2) shown in the figure, for example, by the magnetic force of the magnetic attraction portion 13. In this manner, the magnetic attraction portion 13 has the opening 130 corresponding to the shape of the pattern portion 30, so that the magnetic attraction portion 13 can bring the substrate 2 and the mask 3 into close contact with each other while applying tension to the pattern portion 30.

[0037] <Control example> An example of control of the film forming apparatus 1 executed by the processing unit 90 of the control unit 9 will be described below. Figures 6(A) to 10(B) are explanatory diagrams of the operation of the film forming apparatus 1, showing an example of a process from loading of the substrate 2 to film formation and unloading.

[0038] FIG. 6(A) shows the state in which the substrate 2 has been carried into the vacuum chamber 10. The substrate 2 is carried below the substrate support plate 11 by the transport robot 105. The substrate adsorption surface 11a on the lower surface of the substrate support plate 11 is horizontal. Next, the mask support unit 14 transfers the substrate 2 from the transport robot 105 to the substrate support plate 11. FIG. 6(B) shows this operation. By raising the support member 14a, the peripheral edge of the substrate 2 is placed on the claw portion F1, and the substrate 2 is raised from the transport robot 105 and pressed against the substrate adsorption surface 11a of the substrate support plate 11. The electrostatic chuck of the substrate support plate 11 is operated to adsorb and hold the substrate 2.

[0039] Next, the mask 3 is carried into the vacuum chamber 10. FIG. 7(A) shows the state in which the mask 3 is carried into the vacuum chamber 10. The mask 3 is carried into the vacuum chamber 10 from the storage chamber 104 by the transport robot 106. The mask 3 is located directly below the substrate 2. Next, the mask 3 is transferred from the transport robot 106 to the mask support unit 14 and positioned at the alignment position. FIG. 7(B) shows the operation. By raising the support member 14a, the periphery of the mask 3 is placed on the claw portion F1, and the mask 3 is raised from the transport robot 106. The mask 3 is supported by the support member 14a, and is further raised to be positioned at the alignment position. In this embodiment, the mask 3 is raised to be positioned at the alignment position, but a configuration in which the substrate 2 is lowered to be positioned at the alignment position may also be used.

[0040] Next, the alignment operation is performed. As shown in Fig. 8(A), the measurement unit SR measures the relative positions of the alignment marks on the substrate 2 and the mask 3. If the measurement result (the amount of misalignment between the substrate 2 and the mask 3) is within the allowable range, the alignment operation ends. If the measurement result is outside the allowable range, a control amount (the amount of displacement of the substrate 2) is set based on the measurement result to bring the amount of misalignment within the allowable range.

[0041] The "amount of misalignment" is defined as the distance and direction (X, Y, θ) of the misalignment. Based on the set control amount, the position adjustment unit 80 is operated as shown in Fig. 8(B). As a result, the substrate support plate 11 is displaced on the XY plane, and the relative position of the substrate 2 with respect to the mask 3 is adjusted.

[0042] Whether or not the measurement results are within the allowable range can be determined, for example, by calculating the distances between the alignment marks and comparing the average value or the sum of squares of the distances with a preset threshold value.

[0043] After adjusting the relative positions, the measurement unit SR again measures the relative positions of the alignment marks on the substrate 2 and the mask 3. If the measurement results are within the tolerance range, the alignment operation ends. If the measurement results are outside the tolerance range, the relative position of the substrate 2 with respect to the mask 3 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement results are within the tolerance range.

[0044] Next, a film forming operation is performed. First, the substrate 2 is overlapped with the mask 3. FIG. 9(A) shows this operation. When the substrate support plate 11 is lowered, the substrate 2 is placed on the mask 3, and the entire surface of the substrate 2 to be processed comes into contact with the mask 3. The magnetic attraction portion 13 comes into contact with the cooling plate 12, and the magnetic attraction portion 13, the cooling plate 12, the substrate support plate 11, the substrate 2, and the mask 3 are in close contact from the top. The mask 3 is attracted by the magnetic force of the magnetic attraction portion 13, and the mask 3 and the substrate 2 can be brought into close contact with each other as a whole. Since the magnetic body 32 (see FIG. 4 and FIG. 5) is formed in the pattern portion 30 of the mask 3, a magnetic attraction force can be obtained. Thus, according to this embodiment, even if the mask 3 has a portion with low rigidity, the adhesion between the substrate 2 and the mask 3 can be improved. The magnetic body 32 provided in the peripheral region 301 of the pattern portion 30 is attracted to the magnetic attraction portion 13 having the opening 130 (see FIG. 5). That is, by applying tension to the pattern portion 30, it is possible to further increase the adhesion between the substrate 2 and the mask 3. Also, by applying tension to the pattern portion 30 in this manner, it is possible to prevent deformation or damage to the pattern portion 30, compared to the case where tension is applied to the frame portion 31. Also, by providing the magnetic body 32 in the pattern portion 30 in this manner, it is possible to bring the substrate 2 and the mask 3 into close contact with each other, even if the mask 3 is made of a non-magnetic material.

[0045] 9B, shutter 17a is opened and the deposition material is released from deposition unit 17. The deposition material is deposited on substrate 2 through mask 3.

[0046] When the film formation is completed, the mask 3 and the substrate 2 are each unloaded. Fig. 10(A) shows the operation of unloading the mask 3. First, the magnetic attraction part 13 is raised, and the substrate 2 and the mask 3 are separated from each other. After the hand part of the transfer robot 106 is inserted below the mask 3, the support member 14a of the mask support unit 14 is lowered, and the mask 3 is transferred from the support member 14a to the transfer robot 106. The transfer robot 106 transfers the mask 3 to the storage chamber 104.

[0047] Next, the substrate 2 on which the film has been formed is carried out. The support members 14a of the mask support unit 14 are raised, and the substrate 2 is supported from below by the claws F1. The suction of the substrate support unit 3 to the substrate 2 is released, and the substrate 2 is transferred to the support members 14a. After the hand of the transport robot 105 is advanced below the substrate 2, the support members 14a of the mask support unit 14 are lowered as shown in FIG. 10(B), and the substrate 2 is transferred from the support members 14a to the transport robot 105. The transport robot 105 transports the substrate 2 to the transport path 101b. This completes the operations from carrying in the substrate 2, to forming a film on it, and carrying it out.

[0048] Second Embodiment In the first embodiment, an example was shown in which the magnetic bodies 32 are provided on the peripheral portions 301a and 301b that face each other in the X direction of the peripheral region of the pattern portion 30. The arrangement of the magnetic bodies 32 provided on the pattern portion 30 is not limited to this. Figs. 11(A) to (C) are diagrams showing examples of the arrangement of the magnetic bodies. Figs. 11(A) to (C) are also plan views of the pattern portion 30.

[0049] 11A shows an example in which a magnetic body 32c is provided in a peripheral portion 301c in the Y direction, and a magnetic body 32d is provided in a peripheral portion 301d facing the peripheral portion 301c, in a peripheral region 301 surrounding a pattern region 300. In this way, the direction in which the magnetic body 32 is arranged in the peripheral region 301 may be either the X direction or the Y direction.

[0050] FIG. 11B shows an example in which the magnetic body 32 is provided in each of the peripheral portions 32a to 32d. In the peripheral region 301 of the pattern portion 30, the magnetic body 32a is provided in the peripheral portion 301a in the X direction, and the magnetic body 32b is provided in the peripheral portion 301b facing the peripheral portion 301a. Furthermore, the magnetic body 32c is provided in the peripheral portion 301c in the Y direction intersecting with the X direction, and the magnetic body 32d is provided in the peripheral portion 301d facing the peripheral portion 301c. In this way, by providing the magnetic body 32 in four directions surrounding the pattern portion 300, the tension acting on the pattern portion 30 can be increased. For example, as shown in FIG. 11C, the magnetic body 32 may be provided in the peripheral region 301 so as to surround the outer periphery of the pattern region 300. Even if the magnetic body 32 is provided in the peripheral region 301 in this way, the tension acting on the pattern portion 30 can be increased.

[0051] In the first and the present embodiments, the magnetic body 32 is formed linearly along the pattern region 300, but the present invention is not limited thereto. The magnetic body 32 may be provided in the peripheral region 301 in a curved shape, for example. The width and thickness of the magnetic body 32 can be designed as appropriate. The position at which the magnetic body 32 is provided can be designed as appropriate. The position at which the magnetic body 32 is provided in the peripheral region 301 may be determined based on, for example, the shape of the pattern region 300, the shape of the pattern section 30, the shape of the frame section 31, or the like. The position at which the magnetic body 32 is provided may be determined based on, for example, the size (area) of the pattern section 30. Alternatively, the position may be determined based on, for example, the aspect ratio of the pattern section 30.

[0052] <Third embodiment> In the first embodiment, an example has been described in which the frame portion 31 is formed in a lattice shape surrounding each of the multiple pattern portions 30. The shapes of the pattern portion 30 and the frame portion 31 of the mask 3 are not limited to this. Fig. 12 shows an example in which the frame portion 31' surrounding the pattern portion 30' is formed in a stripe shape. Fig. 12 also shows an enlarged view of the pattern portion 30'.

[0053] As shown in FIG. 12, the frame portion 31' may be formed in a stripe shape. In addition, in the pattern portion 30', a magnetic body 32c' is provided in a peripheral portion 301c' in the Y direction of the peripheral region 301', and a magnetic body 32d' is provided in a peripheral portion 301d' facing the peripheral portion 301c'. As described above, the magnetic body 32 may be provided in the peripheral portions 301a' and 301b' facing each other in the X direction. The magnetic body 32 may be provided so as to surround the pattern region 300. Even in the mask 3 of such a frame portion 31' and pattern portion 30', the adhesion between the mask 3 and the substrate 2 can be improved.

[0054] <Fourth embodiment> In the first embodiment, an example has been described in which the multiple openings 130 formed in the magnetically attracted portion 13 penetrate the mask 3. The multiple openings 130 of the magnetically attracted portion 13 are not limited to this. As shown in FIG. 13, the openings 130' of the magnetically attracted portion 13 may be recessed. The recessed portion is a portion recessed in the thickness direction of the magnetically attracted portion 13. Even with such a shape of the magnetically attracted portion 13, the magnetically attracted portion 13 can attract the magnetic body 32 formed on the mask 3 by magnetic force and apply tension to the pattern portion 30.

[0055] <Fifth embodiment> Next, an example of a method for manufacturing an electronic device will be described below. As an example of the electronic device, the configuration of an organic EL display device and a method for manufacturing the same will be described.

[0056] First, the organic EL display device to be manufactured will be described. Fig. 14(A) is an overall view of an organic EL display device 50, and Fig. 14(B) is a diagram showing the cross-sectional structure of one pixel.

[0057] 14(A), a plurality of pixels 52, each including a plurality of light-emitting elements, are arranged in a matrix in a display region 51 of an organic EL display device 50. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.

[0058] The pixel here refers to the smallest unit capable of displaying a desired color in the display region 51. In the case of a color organic EL display device, a pixel 52 is configured by a combination of a plurality of pixels (called sub-pixels to distinguish from the whole pixel) of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that emit light different from each other. The pixel 52 is often configured by a combination of three types of sub-pixels, a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 needs to include at least one type of sub-pixel, and preferably includes two or more types of sub-pixels, and more preferably includes three or more types of sub-pixels. The sub-pixels that configure the pixel 52 may be, for example, a combination of four types of sub-pixels, a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0059] Fig. 14(B) is a schematic partial cross-sectional view taken along the line AB in Fig. 14(A). A pixel 52 has a plurality of sub-pixels on a substrate 53, each of which is composed of an organic EL element having a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue colors, respectively.

[0060] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common for the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. That is, as shown in FIG. 14B, the hole transport layer 55 may be formed as a common layer for the plurality of sub-pixel regions, and the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region on top of the hole transport layer 55, and the electron transport layer 57 and the second electrode 58 may be formed as a common layer for the plurality of sub-pixel regions on top of the hole transport layer 55.

[0061] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0062] 14(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but they may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. In addition, a hole injection layer having an energy band structure that allows holes to be smoothly injected from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0063] Each of the red layer 56R, the green layer 56G, and the blue layer 56B may be formed of a single light-emitting layer, or may be formed by laminating a plurality of layers. For example, the red layer 56R may be configured of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron block layer. Alternatively, the lower layer may be formed of a red light-emitting layer and the upper layer being an electron transport layer or a hole block layer. By providing a layer below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0064] Although the example of the red layer 56R is shown here, the same structure may be adopted for the green layer 56G and the blue layer 56B. The number of layers may be two or more. Furthermore, layers of different materials may be laminated, such as a light-emitting layer and an electron blocking layer, or layers of the same material may be laminated, such as two or more light-emitting layers.

[0065] Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is composed of two layers, a lower layer 56R1 and an upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer. It is assumed that six film-forming chambers are arranged in which the film-forming device 1 is arranged.

[0066] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and the substrate 53 may be made of glass, plastic, metal, etc. In this embodiment, a substrate in which a polyimide film is laminated on a glass substrate is used as the substrate 53.

[0067] A resin layer such as acrylic or polyimide is coated by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by lithography so that an opening is formed in the portion where the first electrode 54 is formed, to form an insulating layer 59. This opening corresponds to a light-emitting region where the light-emitting element actually emits light. In this embodiment, the large substrate is processed up to the formation of the insulating layer 59, and after the insulating layer 59 is formed, a division step is performed to divide the substrate 53.

[0068] The substrate 53 with the patterned insulating layer 59 is carried into a first film formation chamber, and a hole transport layer 55 is formed as a common layer on the first electrodes 54 in the display regions. The hole transport layer 55 is formed using a mask having an opening for each display region 51 which will eventually become the panel portion of each organic EL display device.

[0069] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into a second film formation chamber. The substrate 53 and the mask are aligned, and the substrate is placed on the mask. A red layer 56R is formed on the hole transport layer 55 in a portion of the substrate 53 where elements emitting red light are arranged (a region where a red subpixel is formed). Here, the mask used in the second film formation chamber is a high-definition mask in which openings are formed only in a plurality of regions that will become red subpixels among a plurality of regions on the substrate 53 that will become subpixels of the organic EL display device. As a result, the red layer 56R including a red light-emitting layer is formed only in a region that will become a red subpixel among a plurality of regions on the substrate 53 that will become subpixels. In other words, the red layer 56R is selectively formed in a region that will become a red subpixel, without being formed in a region that will become a blue subpixel or a green subpixel among a plurality of regions on the substrate 53 that will become subpixels.

[0070] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film formation chamber, and then the blue layer 56B is formed in the fourth film formation chamber. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed over the entire display area 51 in the fifth film formation chamber. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

[0071] The substrate on which the electron transport layer 57 has been formed is moved to a sixth film-forming chamber, where the second electrode 58 is formed. In this embodiment, the first to sixth film-forming chambers form each layer by vacuum deposition. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth film-forming chamber may be formed by sputtering. Thereafter, the substrate on which the second electrode 58 has been formed is moved to a sealing device, and the protective layer 60 is formed by plasma CVD (sealing process), completing the organic EL display device 50. Note that, although the protective layer 60 is formed by the CVD method here, the present invention is not limited to this, and it may be formed by the ALD method or the inkjet method.

[0072] Here, the films are formed in the first to sixth film formation chambers using a mask having an opening corresponding to the pattern of each layer to be formed. When forming the film, the relative positions of the substrate 53 and the mask are adjusted (aligned), and then the substrate 53 is placed on the mask and film formation is performed.

[0073] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) that implements one or more of the functions.

[0074] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0075] 1 film forming device, 2 substrate, 3 mask, 13 magnetic attraction section, 30 pattern section, 31 frame section, 32 magnetic body

Claims

1. A film forming apparatus for forming a film on a substrate through a mask, The mask comprises: A pattern portion on which a predetermined pattern is formed; A frame portion supporting the pattern portion; A magnetic body provided in the pattern portion, The film forming apparatus a magnetic attraction means disposed opposite to the mask via the substrate and attracting the magnetic material; A film forming apparatus comprising:

2. The pattern portion is a pattern region having a plurality of openings formed therein; a peripheral region surrounding the pattern region; The magnetic body is Of the pattern region and the peripheral region, the insulating film is formed in the peripheral region.

2. The film forming apparatus according to claim 1.

3. a first magnetic body is provided on a first peripheral portion of the peripheral region; a second magnetic body is provided on a second peripheral portion of the peripheral region facing the first peripheral portion in a first direction; 3. The film forming apparatus according to claim 2.

4. The magnetic attraction means is a first attraction portion that is disposed outside the first magnetic body in the first direction and attracts the first magnetic body; a second attraction portion that is disposed outside the second magnetic body in the first direction and attracts the second magnetic body; 4. The film forming apparatus according to claim 3.

5. The magnetic attraction means is An opening is provided between the first suction portion and the second suction portion.

5. The film forming apparatus according to claim 4.

6. The magnetic attraction means is It is a magnet, The opening is A portion penetrating the thickness direction of the magnet or a recessed portion.

6. The film forming apparatus according to claim 5.

7. The pattern portion is The mask is formed into a rectangular shape in a plan view, The first peripheral portion and the second peripheral portion are a portion along a side of the rectangular pattern portion, The first magnetic body and the second magnetic body are Provided along the side edge, 4. The film forming apparatus according to claim 3.

8. The mask comprises: A plurality of the pattern portions are provided, The frame portion is The pattern portion is formed in a lattice shape or a stripe shape surrounding each of the plurality of pattern portions.

8. The film forming apparatus according to claim 7.

9. The magnetic body is a third magnetic body is provided on a third peripheral portion between the first peripheral portion and the second peripheral portion of the pattern portion in a second direction intersecting the first direction; a fourth magnetic body is provided on a fourth peripheral portion between the first peripheral portion and the second peripheral portion of the pattern portion and facing the third peripheral portion in the second direction; The magnetic attraction means is a third attraction portion that is disposed outside the third magnetic body in the second direction and attracts the third magnetic body; a fourth attraction portion that is disposed outside the fourth magnetic body in the second direction and attracts the fourth magnetic body; 5. The film forming apparatus according to claim 4.

10. The pattern portion is A portion having a smaller thickness than the frame portion.

2. The film forming apparatus according to claim 1.

11. The substrate is a semiconductor wafer.

2. The film forming apparatus according to claim 1.

12. The mask is a non-magnetic material.

2. The film forming apparatus according to claim 1.

13. The mask is made of silicon. The film forming apparatus according to claim 12 .

14. A deposition means for depositing a deposition material on a substrate, 2. The film forming apparatus according to claim 1.

15. A mask used in a film forming apparatus for forming a predetermined pattern on a substrate, The mask comprises: A pattern portion on which a predetermined pattern is formed; a magnetic body provided on the pattern portion that is attracted by a magnetic attraction means of a film forming apparatus disposed via the substrate; A frame portion supporting the pattern portion. A mask characterized by:

16. A method for forming a film on a substrate through a mask, comprising the steps of: The mask comprises: A pattern portion on which a predetermined pattern is formed; A frame portion supporting the pattern portion; A magnetic body provided in the pattern portion, The film forming method a magnetic attraction step of attracting the magnetic material by placing the magnetic material opposite to the mask via the substrate; A film forming method comprising:

17. A film forming process of forming a film on a substrate by the film forming apparatus according to claim 1, 2. A method for producing an electronic device comprising the steps of:

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