Semiconductor device and power conversion device

Abstract

To provide a technology for effectively reducing resistance even when an electrode has an uneven shape.SOLUTION: A semiconductor device related to the technology disclosed in the present specification includes a semiconductor chip, a case that houses the semiconductor chip, a main electrode that is electrically connected to the semiconductor chip via a wire and is partially exposed to the outside from the case, and a conductive material applied to a surface of the main electrode that is exposed from the case, and the surface of the main electrode is the surface that is connected to a bus bar.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The technology disclosed herein relates to semiconductor technology. [Background technology]

[0002] As a method for reducing the contact resistance between the busbar and the main electrode of a semiconductor device, for example, the method disclosed in Patent Document 1 is known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-294849 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the method disclosed in Patent Document 1, if the surface of the main electrode is uneven, the contact area becomes small, and it may not be possible to reduce the contact resistance or thermal contact resistance.

[0005] The technology disclosed in the present specification has been made in consideration of the problems described above, and is a technology for effectively reducing resistance even when the electrode shape has irregularities. [Means for solving the problem]

[0006] A semiconductor device which is a first aspect of the technology disclosed in the present specification comprises a semiconductor chip, a case which houses the semiconductor chip, a main electrode which is electrically connected to the semiconductor chip via a wire and is partially exposed to the outside from the case, and a conductive material applied to a surface of the main electrode which is exposed from the case, wherein the surface of the main electrode is a surface which is connected to a bus bar. Effect of the Invention

[0007] According to at least the first aspect of the technology disclosed in the present specification, the main electrode contacts the busbar via a conductive material. Therefore, even if the main electrode or the busbar has unevenness, the contact area between the main electrode and the busbar is not reduced, and the contact resistance or thermal contact resistance between the main electrode and the busbar can be reduced.

[0008] Furthermore, objects, features, aspects and advantages associated with the technology disclosed herein will become more apparent from the detailed description set forth below and the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] 1A and 1B are diagrams illustrating an example of a structure of a semiconductor device according to an embodiment; [Diagram 2] 2 is a cross-sectional view showing an example of the AA' cross section in FIG. 1. [Diagram 3] 13 is a diagram showing an example of a configuration in which a bus bar is connected to a main electrode from outside. FIG. [Figure 4] 4 is a cross-sectional view showing an example of a configuration in which a bus bar is connected to the main electrode shown in FIG. 3. [Diagram 5] 1A and 1B are diagrams illustrating an example of a configuration in which a bus bar is externally connected to a main electrode of a semiconductor device according to an embodiment. [Figure 6] 6 is a cross-sectional view showing an example of a configuration in which a bus bar is connected to the main electrode shown in FIG. 5. [Figure 7] 1A and 1B are diagrams illustrating an example of a structure of a semiconductor device according to an embodiment; [Figure 8] 1A and 1B are diagrams illustrating an example of a structure of a semiconductor device according to an embodiment; [Figure 9] 1 is a diagram conceptually illustrating an example of a configuration of a power conversion system including a power conversion device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of explaining the technology, but they are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0011] The drawings are schematic, and for the sake of convenience, configurations may be omitted or simplified as appropriate. The size and positional relationship of the configurations shown in different drawings are not necessarily described accurately, and may be changed as appropriate. Hatching may be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the contents of the embodiments.

[0012] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0013] Furthermore, in the description in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0014] Furthermore, even if ordinal numbers such as "first" or "second" are used in the description of this specification, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and the contents of the embodiments are not limited to the orders that may result from these ordinal numbers.

[0015] Furthermore, although the descriptions in this specification may use terms indicating specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," these terms are used for convenience to facilitate understanding of the contents of the embodiments, and do not relate to the positions or directions in which the embodiments are actually implemented.

[0016] In addition, in the description of the present specification, when "the upper surface of ..." or "the lower surface of ..." is stated, it is intended to include not only the upper surface or lower surface of the target component itself, but also a state in which another component is formed on the upper surface or lower surface of the target component. In other words, for example, when it is stated that "B is provided on the upper surface of A," it does not prevent another component "C" from being interposed between A and B.

[0017] <First embodiment> The semiconductor device according to this embodiment will be described below.

[0018] <Configuration of semiconductor device> Fig. 1 is a diagram showing an example of the structure of a semiconductor device according to this embodiment. As shown in Fig. 1, the semiconductor device has a structure in which a semiconductor chip is surrounded by a case 18, and a part of a main electrode 14 and a conductive material 12 provided (applied) on the upper surface of the main electrode 14 are exposed from the upper surface of the case 18. An opening 20 is formed on the upper surface of the main electrode 14, and a nut 16 is formed inside the opening 20. The conductive material 12 is provided so as to surround the opening 20 in a plan view.

[0019] The conductive material 12 may be made of, for example, PC-TIM (Phase Change - Thermal Interface Material) and may have the property of being in a solid state at 45°C or less and softening or liquefying at a temperature exceeding 45°C. With such a property, since the conductive material 12 is solid at room temperature, peeling off from the semiconductor device during transportation is suppressed. Furthermore, when the semiconductor device is in operation, the conductive material 12 softens and the degree of adhesion with the bus bar is improved, so that heat propagation or conductivity can be improved. Furthermore, the conductive material 12 may have a thermal conductivity of, for example, 3 [W / m·K] or more and a high heat dissipation property. With such a property, the conductive material 12 has a high thermal conductivity, so that heat generated inside the module can be efficiently propagated to the bus bar 36. Therefore, the temperature rise in the main electrode 14 or inside the module can be suppressed.

[0020] Fig. 2 is a cross-sectional view showing an example of the A-A' cross section in Fig. 1. As shown in Fig. 2, the semiconductor device includes a base plate 22, an insulating layer 26 provided on the upper surface of the base plate 22 via a bonding material 24A, a copper pattern 28 provided on a part of the upper surface of the insulating layer 26 via a bonding material 24B, a semiconductor chip 30 provided on a part of the upper surface of the copper pattern 28 via a bonding material 24C, and a semiconductor chip 30 provided in contact with the upper surface of the semiconductor chip 30, an end of the main electrode 14 exposed from the side surface of the case 18 to the inside of the case 18, and the upper surface of the copper pattern 28 (the upper surface of the copper pattern 28 separated from the copper pattern 28 on which the semiconductor chip 30 is provided). The device comprises a wire 34, a case 18 provided on the upper surface of a base plate 22 and accommodating an insulating layer 26, a copper pattern 28, a semiconductor chip 30 and the wire 34, a main electrode 14 provided with its respective ends exposed from the external upper and inner surfaces of the case 18, a conductive material 12 provided (applied) on the upper surface of the main electrode 14 exposed to the outside of the case 18, a nut 16 provided inside an opening 20 of the main electrode 14, and a sealing resin 32 that covers the base plate 22, the insulating layer 26, the copper pattern 28, the semiconductor chip 30 and the wire 34 and fills the inside of the case 18.

[0021] The semiconductor chip 30 may be an RC-IGBT in which a switching element and a free wheel element are integrated into one chip, or a device using a wide band gap semiconductor other than silicon, such as SiC or GaN. Here, a wide band gap semiconductor generally refers to a semiconductor having a forbidden band width of approximately 2 eV or more, and known examples include Group 3 nitrides such as gallium nitride (GaN), Group 2 oxides such as zinc oxide (ZnO), Group 2 chalcogenides such as zinc selenide (ZnSe), diamond, and silicon carbide (SiC).

[0022] In the semiconductor device according to this embodiment, the conductive material 12 is provided on the upper surface of the main electrode 14, thereby making it possible to reduce the contact resistance or contact thermal resistance with the bus bar attached to the main electrode 14 and suppress the temperature rise inside the electrode or module.

[0023] Fig. 3 is a diagram showing an example of a configuration when a bus bar is connected to main electrode 14 from the outside. Fig. 4 is a cross-sectional view showing an example of a configuration when a bus bar is connected to main electrode 14 shown in Fig. 3. As shown in Figs. 3 and 4, a bus bar 36 is attached to the upper surface of main electrode 14 of the semiconductor device. A screw 38 is inserted through an opening 37 provided in bus bar 36 and an opening 20 provided in main electrode 14, and further, screw 38 is screwed (fitted) into nut 16, thereby fixing screw 38 and nut 16.

[0024] In this case, the main electrode 14 and the bus bar 36 are in contact with each other by fixing the screw 38 and the nut 16 as described above, but if the surface of the main electrode 14 is uneven (including the case where the main electrode 14 is warped) or if the surface of the bus bar 36 is uneven (including the case where the bus bar 36 is warped), an area will be created where the main electrode 14 and the bus bar 36 are not in contact (i.e., the contact area will be reduced).

[0025] Fig. 5 is a diagram showing an example of a configuration when a bus bar is connected from outside to main electrode 14 of a semiconductor device according to this embodiment. Fig. 6 is a cross-sectional view showing an example of a configuration when a bus bar is connected to main electrode 14 shown in Fig. 5. As shown in Figs. 5 and 6, a bus bar 36 is attached to the upper surface of main electrode 14 of the semiconductor device via conductive material 12. A screw 38 is inserted through opening 37 provided in bus bar 36 and opening 20 provided in main electrode 14, and screw 38 is screwed (fitted) into nut 16, thereby fixing screw 38 and nut 16.

[0026] In this case, the screw 38 and the nut 16 are fixed as described above, so that the main electrode 14 and the bus bar 36 are in contact with each other via the conductive material 12. Therefore, even if the surface of the main electrode 14 is uneven (including the case where the main electrode 14 is warped) or the surface of the bus bar 36 is uneven (including the case where the bus bar 36 is warped), the conductive material 12 enters into the area where the main electrode 14 and the bus bar 36 are not in direct contact, and the main electrode 14 and the bus bar 36 can be indirectly in contact with each other. Therefore, the contact area between the main electrode 14 and the bus bar 36 is not reduced, and the contact resistance or contact thermal resistance between the main electrode 14 and the bus bar 36 can be reduced. By reducing the contact resistance at the relevant location, heat generation at the contact portion can be suppressed. In addition, by reducing the contact thermal resistance, heat generated inside the module can be efficiently transferred to the bus bar 36, so that it is possible to suppress a temperature rise inside the electrode or the module.

[0027] <Second embodiment> A semiconductor device according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are shown with the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0028] <Configuration of semiconductor device> 7 is a diagram showing an example of the structure of a semiconductor device according to this embodiment. As shown in the example in FIG. 7, the semiconductor device has a structure in which a semiconductor chip is surrounded by a case 18A, and a part of the main electrode 14 and the conductive material 12 provided (applied) on the upper surface of the main electrode 14 are exposed from the upper surface of the case 18A. An opening 20 is formed on the upper surface of the main electrode 14, and a nut 16 is formed inside the opening 20. The conductive material 12 is provided so as to surround the opening 20 in a plan view. The internal configuration of the case 18A is the same as that shown in FIG. 2.

[0029] Furthermore, on the upper surface of case 18A on which main electrode 14 is provided, a convex receiving portion 180 is formed so as to surround main electrode 14 exposed from case 18A in plan view. Receiving portion 180 is formed so as to go around, for example, at the end portion of the upper surface of case 18A. Note that receiving portion 180 is not limited to being continuously provided so as to surround main electrode 14 in plan view, and may be formed intermittently in the circumferential direction, for example.

[0030] By providing the receiving portion 180, when the bus bar is fastened to the main electrode 14 via a screw or when the conductive material 12 melts, it is possible to prevent the molten conductive material 12 from leaking from the upper surface of the main electrode 14 and dripping onto the case 18A (and further onto the lower surface of the base plate 22 in FIG. 2). This makes it possible to maintain the insulating performance between the main electrode 14 and the base plate 22.

[0031] <Third embodiment> A semiconductor device according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are shown with the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0032] <Configuration of semiconductor device> 8 is a diagram showing an example of the structure of a semiconductor device according to this embodiment. As shown in the example in FIG. 8, the semiconductor device has a structure in which a semiconductor chip is surrounded by a case 18, and a part of the main electrode 14 and the conductive material 12 provided (applied) on the upper surface of the main electrode 14 are exposed from the upper surface of the case 18. An opening 20 is formed on the upper surface of the main electrode 14, and a nut 16 is formed inside the opening 20. The conductive material 12 is provided so as to surround the opening 20 in a plan view. The internal configuration of the case 18 is the same as that shown in FIG. 2.

[0033] Moreover, a resist 140 is provided on the upper surface of the main electrode 14 exposed from the case 18 so as to surround the conductive material 12 in a plan view. The resist 140 is formed, for example, so as to wrap around the end portion of the upper surface of the main electrode 14. Note that the resist 140 is not limited to being provided continuously so as to surround the conductive material 12 in a plan view, and may be formed, for example, intermittently in the circumferential direction.

[0034] By providing resist 140, when the bus bar is fastened to main electrode 14 via a screw or when conductive material 12 melts, it is possible to prevent molten conductive material 12 from leaking from the upper surface of main electrode 14 and dripping onto case 18 (and further onto the lower surface of base plate 22 in FIG. 2). This makes it possible to maintain the insulating performance between main electrode 14 and base plate 22.

[0035] The resist 140 can also be applied to the configuration in which the receiving portion 180 shown in FIG. 7 is provided.

[0036] <Fourth embodiment> A power conversion device and a method for manufacturing the power conversion device according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0037] <Configuration of power conversion device> In this embodiment, the semiconductor device according to the above-described embodiment is applied to a power converter. The power converter to which the semiconductor device is applied is not limited to a specific application, but the following describes a case where the semiconductor device is applied to a three-phase inverter.

[0038] FIG. 9 is a diagram conceptually illustrating an example of the configuration of a power conversion system including the power conversion device of this embodiment.

[0039] As shown in FIG. 9, the power conversion system includes a power supply 2100, a power conversion device 2200, and a load 2300. The power supply 2100 is a DC power supply and supplies DC power to the power conversion device 2200. The power supply 2100 can be configured from various sources, such as a DC system, a solar cell, or a storage battery. The power supply 2100 can also be configured from a rectifier circuit or an AC-DC converter connected to an AC system. The power supply 2100 can also be configured from a DC-DC converter that converts DC power output from a DC system into a predetermined power.

[0040] The power conversion device 2200 is a three-phase inverter connected between the power supply 2100 and the load 2300. The power conversion device 2200 converts DC power supplied from the power supply 2100 into AC power, and further supplies the AC power to the load 2300.

[0041] Moreover, as shown in an example in FIG. 9, the power conversion device 2200 includes a conversion circuit 2201 that converts DC power into AC power and outputs the AC power, and a control circuit 2203 that outputs a control signal for controlling the conversion circuit 2201 to the conversion circuit 2201.

[0042] The load 2300 is a three-phase motor driven by AC power supplied from the power conversion device 2200. The load 2300 is not limited to a specific use, but is a motor mounted on various electric devices, for example, a motor used for a hybrid car, an electric car, a railroad car, an elevator, or an air conditioner.

[0043] The power conversion device 2200 will be described in detail below. The conversion circuit 2201 includes a switching element and a free wheel diode (not shown here). The switching element performs a switching operation to convert DC power supplied from the power source 2100 into AC power, which is then supplied to the load 2300.

[0044] There are various specific circuit configurations for the conversion circuit 2201, but the conversion circuit 2201 according to this embodiment is a two-level three-phase full-bridge circuit, and includes six switching elements and six freewheeling diodes connected in inverse parallel to each switching element.

[0045] The semiconductor device according to any of the above-described embodiments is applied to at least one of the switching elements and the free wheel diodes in the conversion circuit 2201. The six switching elements are connected in series in groups of two to form upper and lower arms, and each upper and lower arm forms each phase (i.e., U phase, V phase, and W phase) of the full bridge circuit. The output terminals of each upper and lower arm (i.e., the three output terminals of the conversion circuit 2201) are connected to the load 2300.

[0046] The conversion circuit 2201 also includes a drive circuit (not shown here) for driving each switching element, but the drive circuit may be built into the semiconductor device, which is a semiconductor module, or may be configured to be provided separately from the semiconductor module. The drive circuit generates a drive signal for driving the switching element of the conversion circuit 2201, and further supplies the drive signal to the control electrode of the switching element of the conversion circuit 2201. Specifically, based on a control signal output from a control circuit 2203 described later, the drive signal for turning the switching element on and the drive signal for turning the switching element off are output to the control electrode of each switching element.

[0047] When the switching element is maintained in the on state, the drive signal is a voltage signal (i.e., an on signal) that is equal to or greater than the threshold voltage of the switching element, and when the switching element is maintained in the off state, the drive signal is a voltage signal (i.e., an off signal) that is equal to or less than the threshold voltage of the switching element.

[0048] The control circuit 2203 controls the switching elements of the conversion circuit 2201 so that a desired power is supplied to the load 2300. Specifically, the time for which each switching element of the conversion circuit 2201 should be in an ON state (i.e., ON time) is calculated based on the power to be supplied to the load 2300. For example, the conversion circuit 2201 can be controlled by PWM control that modulates the ON time of the switching element according to the voltage to be output.

[0049] Then, the control circuit 2203 outputs a control command (i.e., a control signal) to the drive circuit so that an ON signal is output to the switching element that should be in the ON state at each point in time, and an OFF signal is output to the switching element that should be in the OFF state. Based on the control signal, the drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element.

[0050] In the power conversion device 2200 according to this embodiment, the semiconductor device according to any one of the embodiments described above is applied as a switching element of the conversion circuit 2201, so that the on-resistance after a current cycle can be stabilized.

[0051] In this embodiment, an example has been described in which the semiconductor device in any of the embodiments described above is applied to a two-level three-phase inverter, but the application example is not limited to this, and the semiconductor device in any of the embodiments described above can be applied to various power conversion devices.

[0052] In addition, although a two-level power conversion device has been described in this embodiment, the semiconductor device in any of the above-described embodiments may be applied to a three-level or multilevel power conversion device. In addition, when power is supplied to a single-phase load, the semiconductor device in any of the above-described embodiments may be applied to a single-phase inverter.

[0053] Furthermore, when supplying power to a DC load or the like, the semiconductor device according to any of the above-described embodiments can be applied to a DC-DC converter or an AC-DC converter.

[0054] Moreover, the power conversion device to which the semiconductor device according to any of the above-described embodiments is applied is not limited to the case where the load described above is an electric motor, and can be used, for example, as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system. Moreover, the power conversion device to which the semiconductor device according to any of the above-described embodiments is applied can be used as a power conditioner in a solar power generation system, a power storage system, or the like.

[0055] <About the manufacturing method of the power conversion device> Next, a method for manufacturing the power converter according to this embodiment will be described.

[0056] First, a semiconductor device is manufactured by the manufacturing method described in the above-described embodiment. Then, a conversion circuit 2201 having the semiconductor device is provided as a component of a power conversion device. The conversion circuit 2201 is a circuit for converting input power and outputting it.

[0057] The power conversion device includes a control circuit 2203. The control circuit 2203 is a circuit for outputting a control signal for controlling the conversion circuit 2201 to the conversion circuit 2201.

[0058] The semiconductor switching elements used in the embodiments described above are not limited to switching elements made of silicon (Si) semiconductors. For example, the semiconductor switching elements may be made of a non-Si semiconductor material having a wider band gap than a Si semiconductor.

[0059] Examples of wide band gap semiconductors that are non-Si semiconductor materials include silicon carbide, gallium nitride-based materials, and diamond.

[0060] Switching elements made of wide band gap semiconductors can be used in high voltage regions where unipolar operation is difficult with Si semiconductors, and can significantly reduce the switching loss that occurs during switching operations, thereby enabling a significant reduction in power loss.

[0061] In addition, switching elements made of wide band gap semiconductors have low power loss and high heat resistance, so when configuring a power module equipped with a cooling unit, it is possible to reduce the size of the heat dissipation fins of the heat sink, making it possible to further reduce the size of the semiconductor module.

[0062] In addition, switching elements made of wide bandgap semiconductors are suitable for high-frequency switching operations, so when they are applied to converter circuits that require higher frequencies, the increased switching frequency can also reduce the size of reactors or capacitors connected to the converter circuits.

[0063] Therefore, the same effects can be obtained even when the semiconductor switching elements in the above-described embodiments are made of a wide-gap semiconductor such as silicon carbide.

[0064] <Effects of the above-described embodiments> Next, examples of effects produced by the above-described embodiments are shown. In the following description, the effects are described based on the specific configurations shown as examples in the above-described embodiments, but may be replaced with other specific configurations shown as examples in this specification as long as the same effects are produced. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0065] Furthermore, the replacement may be made across a number of embodiments, that is, configurations shown as examples in different embodiments may be combined to produce the same effect.

[0066] According to the embodiment described above, the semiconductor device includes a semiconductor chip 30, a case 18 (or case 18A) that houses the semiconductor chip 30, a main electrode 14, and a conductive material 12. The main electrode 14 is electrically connected to the semiconductor chip 30 via a wire 34. A portion of the main electrode 14 is exposed to the outside from the case 18 (or case 18A). The conductive material 12 is applied to the surface of the main electrode 14 that is exposed from the case 18 (or case 18A). The surface of the main electrode 14 is the surface that is connected to the bus bar 36.

[0067] According to this configuration, the main electrode 14 and the bus bar 36 are in contact with each other via the conductive material 12. Therefore, even if the surface of the main electrode 14 is uneven (including the case where the main electrode 14 is warped) or the surface of the bus bar 36 is uneven (including the case where the bus bar 36 is warped), the conductive material 12 penetrates into the region where the main electrode 14 and the bus bar 36 are not in direct contact with each other, and the main electrode 14 and the bus bar 36 can be indirectly in contact with each other. Therefore, the contact area between the main electrode 14 and the bus bar 36 is not reduced, and the contact resistance or contact thermal resistance between the main electrode 14 and the bus bar 36 can be reduced.

[0068] Furthermore, the same effect can be achieved even if other configurations, examples of which are shown in this specification, are appropriately added to the above configuration, i.e., even if other configurations in this specification that were not mentioned as the above configuration are appropriately added.

[0069] Furthermore, according to the embodiment described above, a convex receiving portion 180 is formed on the surface of the case 18A, surrounding the main electrode 14 exposed from the case 18A in a plan view. This configuration can prevent the conductive material 12, which has been melted or the like, from leaking from the upper surface of the main electrode 14 and dripping onto the case 18A (and further onto the lower surface of the base plate 22 in FIG. 2). This makes it possible to maintain the insulating performance between the main electrode 14 and the base plate 22.

[0070] Furthermore, according to the embodiment described above, the semiconductor device includes resist 140 that surrounds conductive material 12 in a plan view and is provided on the surface of main electrode 14 exposed from case 18 (or case 18A). This configuration can prevent molten conductive material 12 from leaking from the upper surface of main electrode 14 and dripping onto case 18A (and further onto the lower surface of base plate 22 in FIG. 2). This makes it possible to maintain the insulating performance between main electrode 14 and base plate 22.

[0071] Moreover, according to the embodiment described above, the conductive material 12 has a thermal conductivity of 3 W / m K or more. With this configuration, the conductive material 12 has a high thermal conductivity, so that heat generated inside the module can be efficiently transferred to the bus bar 36. As a result, it is possible to suppress a temperature rise in the main electrode 14 or inside the module.

[0072] Moreover, according to the embodiment described above, conductive material 12 has the property of being in a solid state at temperatures below 45° C., and softening or liquefying at temperatures above 45° C. With this configuration, since conductive material 12 is in a solid state at room temperature, it is possible to prevent conductive material 12 from peeling off from the semiconductor device during transportation. Furthermore, when the semiconductor device is in operation, conductive material 12 softens and the degree of adhesion to bus bar 36 improves, thereby improving heat transfer or conductivity.

[0073] Furthermore, according to the embodiment described above, the semiconductor chip 30 is made of a wide band gap semiconductor. With such a configuration, it is possible to reduce the size of the module while improving the accuracy of overcurrent protection.

[0074] Furthermore, according to the embodiment described above, the power conversion device includes the above-mentioned semiconductor device, and includes conversion circuit 2201 that converts and outputs input power, and control circuit 2203 that outputs a control signal for controlling conversion circuit 2201 to conversion circuit 2201. With such a configuration, the contact area between main electrode 14 and bus bar 36 is not reduced, and the contact resistance or contact thermal resistance between main electrode 14 and bus bar 36 can be reduced.

[0075] <Modifications of the above-described embodiments> In the multiple embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may be described, but these are merely examples in all aspects and are not limiting.

[0076] Therefore, countless modifications and equivalents not shown as examples are assumed within the scope of the technology disclosed in the present specification, including, for example, modifying, adding, or omitting at least one component, and further, extracting at least one component in at least one embodiment and combining it with a component in another embodiment.

[0077] In addition, in at least one of the embodiments described above, when a material name or the like is stated without being specifically specified, it is understood that the material in question may include other additives, such as alloys, unless a contradiction arises.

[0078] Furthermore, unless a contradiction arises, when it is stated in the above-described embodiments that "one" component is provided, "one or more" of that component may be provided.

[0079] Furthermore, each component in the embodiments described above is a conceptual unit, and the scope of the technology disclosed in this specification includes cases where one component is made up of multiple structures, where one component corresponds to a part of a structure, and even where multiple components are provided in one structure.

[0080] Furthermore, each of the components in the embodiments described above includes structures having other structures or shapes as long as they perform the same function.

[0081] Furthermore, the descriptions in this specification are incorporated by reference for all purposes related to the present technology, and none of them are admitted to be prior art.

[0082] Various aspects of the present disclosure are summarized below as appendices.

[0083] (Appendix 1) A semiconductor chip; a case for accommodating the semiconductor chip therein; a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to the outside from the case; a conductive material applied to a surface of the main electrode exposed from the case, The surface of the main electrode is a surface to be connected to a bus bar. Semiconductor device.

[0084] (Appendix 2) 2. The semiconductor device according to claim 1, A convex receiving portion is formed on a surface of the case so as to surround the main electrode exposed from the case in a plan view. Semiconductor device.

[0085] (Appendix 3) 3. The semiconductor device according to claim 1, a resist that surrounds the conductive material in a plan view and is provided on a surface of the main electrode that is exposed from the case; Semiconductor device.

[0086] (Appendix 4) A semiconductor device according to any one of claims 1 to 3, The conductive material has a thermal conductivity of 3 [W / m K] or more. Semiconductor device.

[0087] (Appendix 5) A semiconductor device according to any one of claims 1 to 4, The conductive material has a property of being in a solid state at temperatures below 45°C and softening or liquefying at temperatures above 45°C. Semiconductor device.

[0088] (Appendix 6) A semiconductor device according to any one of claims 1 to 5, The semiconductor chip is made of a wide band gap semiconductor. Semiconductor device.

[0089] (Appendix 7) A conversion circuit including at least one semiconductor device according to any one of claims 1 to 6, and converting and outputting an input power; a control circuit that outputs a control signal for controlling the conversion circuit to the conversion circuit; Power conversion equipment. [Explanation of symbols]

[0090] 12 conductive material, 14 main electrode, 16 nut, 18 case, 18A case, 20 opening, 22 base plate, 24A bonding material, 24B bonding material, 24C bonding material, 26 insulating layer, 28 copper pattern, 30 semiconductor chip, 32 sealing resin, 34 wire, 36 bus bar, 37 opening, 38 screw, 140 resist, 180 receiving portion, 2100 power supply, 2200 power conversion device, 2201 conversion circuit, 2203 control circuit, 2300 load.

Claims

1. A semiconductor chip; a case for accommodating the semiconductor chip therein; a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to the outside from the case; a conductive material applied to a surface of the main electrode exposed from the case, The surface of the main electrode is a surface to be connected to a bus bar. Semiconductor device.

2. 2. The semiconductor device according to claim 1, A convex receiving portion is formed on a surface of the case so as to surround the main electrode exposed from the case in a plan view. Semiconductor device.

3. 3. The semiconductor device according to claim 1, a resist that surrounds the conductive material in a plan view and is provided on a surface of the main electrode that is exposed from the case; Semiconductor device.

4. 3. The semiconductor device according to claim 1, The conductive material has a thermal conductivity of 3 [W / m · K] or more. Semiconductor device.

5. 3. The semiconductor device according to claim 1, The conductive material has a property of being in a solid state at temperatures below 45°C and being softened or liquefied at temperatures exceeding 45°C. Semiconductor device.

6. 3. The semiconductor device according to claim 1, The semiconductor chip is made of a wide band gap semiconductor. Semiconductor device.

7. A conversion circuit having at least one semiconductor device according to claim 1 or 2, which converts input power and outputs the converted power; a control circuit that outputs a control signal for controlling the conversion circuit to the conversion circuit; Power conversion equipment.

Images