High-temperature and vacuum isolation processing mini-environments

Abstract

To provide a method and apparatus for substrate processing, and a cluster tool including a transfer chamber assembly and a plurality of processing assemblies.SOLUTION: A transfer chamber assembly 150 and processing assemblies 160b include processing platforms for atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, cleaning, implanting, heating, annealing, and / or polishing processes. A processing chamber volume 278 is sealed from a transfer chamber volume 226 using a support chuck 224b on which a substrate is disposed. The support chuck is raised to form an isolation seal between the processing chamber volume and the transfer chamber volume using a bellows assembly 250 and a chuck sealing surface.SELECTED DRAWING: Figure 3B

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments described herein relate generally to methods and apparatus for processing substrates. More particularly, embodiments of the present disclosure relate to a substrate processing platform that uses multiple processing chambers to process substrates. [Background technology]

[0002] A conventional cluster tool for processing a substrate by depositing material onto the substrate, etching material onto the substrate or onto the substrate, or other processes used during the fabrication of integrated circuit chips, is configured to perform one or more processes during substrate processing therein. For example, a cluster tool may include a physical vapor deposition (PVD) chamber for performing a PVD process on the substrate, an atomic layer deposition (ALD) chamber for performing an ALD process on the substrate, a chemical vapor deposition (CVD) chamber for performing a CVD process on the substrate, an etching chamber for performing an etching process on the substrate, a thermal treatment chamber for performing a thermal process on the substrate, a plasma ion implantation chamber for implanting ions into the substrate or a film layer formed thereon, and / or one or more other processing chambers.

[0003] The aforementioned cluster tools have limitations, such as mechanical limitations on the throughput of substrates therethrough, levels of particulates (particles) present in the substrate processing environment, and constraints on process conditions within processing chambers on the cluster tool. Thus, what is needed in the art is a cluster tool that can improve mechanical throughput, reduce levels of particulates present in the substrate processing environment, and improve flexibility of process conditions between processing chambers within the same cluster tool.

[0004] Described herein is a substrate processing apparatus that uses multiple processing assemblies to process substrates. Summary of the Invention

[0005] The present disclosure generally relates to an apparatus for substrate processing and a cluster tool including a transfer chamber assembly and multiple processing assemblies.

[0006] In one embodiment, an apparatus for simultaneously processing multiple substrates is described. The apparatus includes a transfer chamber assembly having one or more walls defining a transfer space, a support chuck having a substrate support surface, a seal ring having a chuck seal surface, and a plurality of processing assemblies disposed within the transfer chamber assembly. The chuck seal surface is disposed around the substrate support surface of the support chuck. Each of the processing assemblies includes one or more processing chamber walls and a lift assembly. The processing chamber walls have an upper seal surface and the lift assembly moves the support chuck between a transfer position and a processing position. The upper seal surface forms a separation seal with the chuck seal surface when the support chuck is in the processing position, and forms a sealed processing chamber space between the one or more processing chamber walls and the support chuck that is fluidly separated from the transfer space. The transfer space is in fluid communication with the processing chamber space when the support chuck is in the transfer position.

[0007] In another embodiment, another apparatus for simultaneously processing multiple substrates is described. The apparatus includes a transfer chamber assembly having one or more walls defining a transfer space, a support chuck having a substrate support surface, a seal ring having a chuck seal surface, a plurality of processing assemblies disposed within the transfer chamber assembly, and a lift assembly. The chuck seal surface is disposed around the substrate support surface of the support chuck. Each of the processing assemblies includes one or more processing chamber walls. The one or more processing chamber walls have an upper seal surface, and a lift assembly for moving the support chuck between a transfer position and a processing position. The upper seal surface forms a separation seal with the chuck seal surface when the support chuck is in the processing position, and forms a sealed processing chamber space between the one or more processing chamber walls and the support chuck that is fluidly separated from the transfer space. The transfer space is fluidly connected to the processing chamber space when the support chuck is in the transfer position. A robotic transfer device is disposed within the transfer chamber assembly for transferring substrates between the plurality of processing chambers within the transfer assembly.

[0008] In yet another embodiment, a method of processing a substrate is described. The method includes placing a substrate and a support chuck at a first position on a robotic transfer device in a transfer space. A lift assembly is then raised and coupled to the support chuck. The support chuck is disengaged from the robotic transfer device and raised by the lift assembly to a second position. A chuck seal surface is sealed against an upper seal surface to form a chamber space, thereby fluidly isolating the chamber space from the transfer space. The substrate is then processed in the chamber space.

[0009] In order that the above-mentioned features of the present disclosure may be understood in detail, a more detailed description of the present disclosure, briefly summarized above, may be obtained by referring to the embodiments. Some embodiments are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure, since the present disclosure may admit of other equally effective embodiments. [Brief description of the drawings]

[0010] [Figure 1A] FIG. 2 is a plan view of a cluster tool assembly including a transfer chamber assembly and a processing assembly as described herein. [Figure 1B] FIG. 2 is a plan view of a cluster tool assembly including a transfer chamber assembly and a processing assembly as described herein. [Figure 2A] FIG. 2 is a schematic cross-sectional view of a transfer chamber assembly and a processing assembly according to a first embodiment. [Figure 2B] FIG. 2 is a schematic cross-sectional view of a transfer chamber assembly and a processing assembly according to a first embodiment. [Figure 3A] FIG. 13 is a schematic cross-sectional view of a transfer chamber assembly and a processing assembly according to a second embodiment. [Figure 3B] FIG. 13 is a schematic cross-sectional view of a transfer chamber assembly and a processing assembly according to a second embodiment. [Figure 4A] FIG. 3C is a schematic enlarged cross-sectional view of the interface between the sealing ring and the bellows assembly according to FIGS. 2B and 3B. [Figure 4B] FIG. 3C is a schematic enlarged cross-sectional view of the interface between the sealing ring and the bellows assembly according to FIGS. 2B and 3B. [Figure 4C] FIG. 3C is a schematic enlarged cross-sectional view of the interface between the sealing ring and the bellows assembly according to FIGS. 2B and 3B. [Diagram 5] 3C is a schematic enlarged cross-sectional view of a modified interface between the seal ring and the bellows assembly according to FIGS. 2B and 3B, and a gas inlet and gas outlet; FIG. [Figure 6A] 2B and 3C are schematic enlarged cross-sectional views of an alternative interface between the sealing ring and the bellows assembly according to FIGS. [Figure 6B] 2B and 3C are schematic enlarged cross-sectional views of an alternative interface between the sealing ring and the bellows assembly according to FIGS. [Figure 6C] 2B and 3C are schematic enlarged cross-sectional views of an alternative interface between the sealing ring and the bellows assembly according to FIGS. [Figure 6D] 2B and 3C are schematic enlarged cross-sectional views of an alternative interface between the sealing ring and the bellows assembly according to FIGS. [Figure 6E] 2B and 3C are schematic enlarged cross-sectional views of an alternative interface between the sealing ring and the bellows assembly according to FIGS. [Figure 7] This is a method for transferring a substrate within the transfer space and the chamber space of FIGS. 2A and 2B. [Figure 8] This is a method for transferring a substrate within the transfer space and the chamber space of FIGS. 3A and 3B. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] For ease of understanding, wherever possible, the same reference numerals have been used to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012] Embodiments of the present disclosure are directed to an apparatus for substrate processing and a cluster tool comprising a transfer chamber assembly and a plurality of processing assemblies. The transfer chamber assembly and processing assemblies may include processing platforms for ALD, CVD, PVD, etching, cleaning, implanting, heating, annealing, and / or polishing processes. Other processing platforms may also be used in the present disclosure. The present disclosure generally provides a substrate processing tool with improved flexibility of process conditions between processing assemblies within the same cluster tool.

[0013] The present disclosure includes embodiments for substrate processing. A substrate and optionally a support chuck may be transferred between processing assemblies in a transfer space formed by a transfer chamber assembly. The processing assembly includes a processing space in which the substrate is processed. The support chuck may optionally be detached from a lift assembly while being transferred between processing assemblies. Once the substrate and support chuck are positioned on the lift assembly, the lift assembly raises the substrate and support chuck to an upper processing position. While in the upper processing position, a surface of the processing assembly and a surface of the support chuck are sealed against each other to form a fluidically isolated processing space. The processing space is fluidically isolated from the transfer space formed by the transfer chamber assembly.

[0014] The movement of the lift assembly separates the processing spaces from the transfer space, allowing each processing space to be regulated to a different pressure. This allows different substrate processing steps to be performed in each processing assembly within the transfer chamber assembly, even if each processing step requires a different pressure and temperature. The use of a support chuck as a seal member within the processing assembly also minimizes the volume of the processing space. Minimizing the processing space reduces the amount of process and purge gas required during each process. The seal between each processing space and the transfer space further minimizes leakage of process gas into the transfer chamber. The apparatus and method utilized to form the seal between the processing space and the transfer space minimizes particle contamination within the processing space and reduces equipment downtime caused by part replacement and cleaning.

[0015] 1A-1B are plan views of cluster tool assemblies 100a, 100b including a transfer chamber assembly 150 and a processing assembly 160 as described herein. The cluster tool assembly 100a in FIG. 1A includes a single transfer chamber assembly 150 and multiple front end robot chambers 180 between the transfer chamber assembly 150 and a load lock chamber 130. The cluster tool assembly 100b in FIG. 1B includes multiple transfer chamber assemblies 150 and a buffer chamber 140 disposed between the transfer chamber assembly 150 and the load lock chamber 130.

[0016] In FIG. 1A, the cluster tool assembly 100a includes a front opening unified pod (FOUP) 110, a factory interface (FI) 120 adjacent to and operably connected to the FOUP 110, a load lock chamber 130 adjacent to and operably connected to the FI 120, a front-end robot chamber 180 adjacent to and operably connected to the load lock chamber 130, a spare chamber 190 adjacent to and operably connected to the front-end robot chamber 180, and a transfer chamber 150 connected to and operably connected to the front-end robot chamber 180.

[0017] The FOUP 110 is utilized to securely secure and store the substrate while it is placed therein, during transfer of the substrate between different substrate processing equipment, as well as while the FOUP is connected to the substrate processing equipment. The number of FOUPs 110 (four in the figure) may vary depending on the processes performed in the cluster tool assembly 100a. The throughput of the cluster tool assembly 100a also determines, at least in part, the number of docking stations on the FI 120 to which the FOUPs are connected for unloading and loading of substrates therefrom. The FI 120 is disposed between the FOUP 110 and the load lock chamber 130. The FI 120 forms an interface between the semiconductor fabrication facility (Fab) and the cluster tool assembly 100a. The FI 120 is connected to the load lock chamber 130, so that substrates are transferred from the FI 120 to the load lock chamber 130 and from the load lock chamber 130 to the FI 120.

[0018] The front-end robot chamber 180 is located on the same side as each of the load lock chambers 130, such that the load lock chambers 130 are located between the FI 120 and the front-end robot chamber 180. Each of the front-end robot chambers 180 includes a transfer robot 185 therein. The transfer robot 185 is any robot suitable for transferring one or more substrates through or through the front-end robot chamber 180 from one chamber to another. Preparation Chamber In some embodiments, as shown in FIG. 1A, the transfer robot 185 in each front-end robot chamber 180 is configured to transfer a substrate from one of the load lock chambers 130 to one of the spare chambers 190.

[0019] The pre-chambers 190 are either pre-clean chambers, annealing chambers, or cool-down chambers depending on the desired process in the cluster tool assembly 100a. In some embodiments, the pre-chambers 190 are plasma clean chambers. In yet another exemplary embodiment, the pre-chambers 190 are Preclean II chambers available from Applied Materials, Inc., Santa Clara, Calif. A vacuum pump 196 is disposed adjacent each of the pre-chambers 190. The vacuum pumps 196 are configured to evacuate the pre-chambers 190 to a predetermined pressure. In some embodiments, the vacuum pumps 196 are configured to reduce the pressure of the pre-chambers 190, such as to form a vacuum in the pre-chambers 190.

[0020] As shown in FIG 1A, two load lock chambers 130, two front end robot chambers 180, and two spare chambers 190 are configured in the cluster tool assembly 100a. The two load lock chambers 130, the two front end robot chambers 180, and the two spare chambers 190, when arranged as shown in FIG 1A and described above, may form two transfer assemblies. The two transfer assemblies may be spaced apart from each other and may form a mirror image of each other, such that the spare chambers 190 reside on opposing walls of their respective front end robot chambers 180.

[0021] The transfer chamber assembly 150 is adjacent to and operatively connected to the front-end robot chamber 180 such that substrates are transferred between the transfer chamber assembly 150 and the front-end robot chamber 180. The transfer chamber assembly 150 includes a central transfer apparatus 145 and a plurality of processing assemblies 160. The plurality of processing assemblies 160 are disposed about the central transfer apparatus 145, radially outward of a pivot or central axis of the central transfer apparatus 145 within the transfer chamber assembly 150.

[0022] A chamber pump 165 is disposed adjacent to and in fluid communication with each of the processing assemblies 160 such that there are multiple chamber pumps 165 disposed around the central transfer device 145. The multiple chamber pumps 165 are disposed radially outward of the central transfer device 145 within the transfer chamber assembly 150. As shown in FIG. 1A, one chamber pump 165 is fluidly coupled to each of the processing assemblies 160.

[0023] In some embodiments, there may be multiple chamber pumps 165 fluidly coupled to each processing assembly 160. In yet other embodiments, one or more processing assemblies 160 may not have a chamber pump 165 fluidly coupled directly to it. In some embodiments, a varying number of chamber pumps 165 are fluidly coupled to each processing assembly 160, such that one or more processing assemblies 160 may have a different number of chamber pumps 165 than one or more other processing assemblies 160. The chamber pumps 165 allow separate evacuation of processing regions within each processing assembly 160, such that the pressure within each processing assembly may be maintained separately from each other and from the pressure present in the transfer chamber assembly 150.

[0024] 1A illustrates an embodiment having six processing assemblies 160 in the transfer chamber assembly 150. However, other embodiments may have a different number of processing assemblies 160 in the transfer chamber 150. For example, in some embodiments, between 2 and 12 processing assemblies 160 may be disposed in the transfer chamber assembly 150, such as between 4 and 8 processing assemblies 160. In other embodiments, four processing assemblies 160 may be disposed in the transfer chamber assembly 150. The number of processing assemblies 160 affects the total footprint of the cluster tool 100a, the number of possible processing steps that the cluster tool 100a can perform, the total manufacturing cost of the cluster tool 100a, and the throughput of the cluster tool 100a.

[0025] Each of the processing assemblies 160 can be any one of a PVD, CVD, ALD, etching, cleaning, heating, annealing, and / or polishing platform. In some embodiments, all of the processing assemblies 160 are one type of processing platform. In other embodiments, the processing assemblies 160 include two or more different processing platforms. In one exemplary embodiment, all of the processing assemblies 160 are PVD processing chambers. In another exemplary embodiment, the processing assemblies 160 include both PVD and CVD processing chambers. The multiple processing assemblies 160 can be modified to accommodate the type of processing chambers required to complete a semiconductor manufacturing process.

[0026] The central transfer apparatus 145 is disposed approximately in the center of the transfer chamber assembly 150 such that a central axis 155 of the transfer chamber assembly 150 is disposed through the central transfer apparatus 145. The central transfer apparatus 145 is any suitable transfer apparatus configured to transfer substrates between each of the processing assemblies 160. In one embodiment, the central transfer apparatus 145 is a central robot having one or more blades configured to transfer substrates between each of the processing assemblies 160. In another embodiment, the central transfer apparatus is a carousel system that moves the processing regions along a circular orbital path about the central axis 155 of the transfer chamber assembly 150.

[0027] 1B is a plan view of a cluster tool 100b connected to multiple transfer chamber assemblies 150. The FOUP 110, FI 120, and load lock chamber 130 may be arranged similarly to the FOUP 110, FI 120, and load lock chamber 130 described above in connection with FIG. 1A. The cluster tool 100b of FIG. 1B further includes an FI etcher 115, a buffer chamber 140, and multiple transfer chamber assemblies 150.

[0028] The FI etcher 115 is disposed adjacent to the FI 120 such that the FI etcher 115 is disposed on a sidewall of the FI 120. The FI etcher 115 may be disposed on a sidewall of the FI 120 that is separate from the sidewalls of the FI connected to the FOUP 110 and the load lock chamber 130. The FI etcher 115 may be an etch chamber. The FI etcher 115 may be similar to the Centris® line of etch chambers available from Applied Materials, Inc.

[0029] A buffer chamber 140 is located between the load lock chamber 130 and the multiple transfer chamber assemblies 150 and provides an isolatable space in which substrates may be transferred between the load lock chamber 130 and the multiple transfer chamber assemblies 150. The buffer chamber 140 is coupled to both the load lock chamber 130 and the multiple transfer chamber assemblies 150. As shown in FIG. 1B, three transfer chamber assemblies 150 are disposed around and attached to the buffer chamber 140. In other embodiments, there may be one, two, or more than three transfer chamber assemblies 150 disposed around the buffer chamber 140.

[0030] The buffer chamber 140 includes at least one opening 146 along each wall of the buffer chamber 140 that contacts the transfer chamber assembly 150 or the load lock chamber 130. Each opening 146 is sized to allow passage of a substrate, a substrate chuck, or a substrate on a substrate chuck to or from the transfer chamber assembly 150. In some embodiments, there are two openings 146 along each wall of the buffer chamber 140 adjacent to the transfer chamber assembly 150. This allows two substrates to be passed simultaneously from the buffer chamber 140 to the transfer chamber assembly 150 or from the transfer chamber assembly 150 to the buffer chamber 140.

[0031] The buffer chamber 140 includes one or more buffer chamber transfer robots 148. The buffer chamber transfer robot 148 moves substrates, chucks, or both substrates and chucks between the transfer chamber assembly 150 and the load lock chamber 130. The buffer chamber transfer robot 148 may be any suitable substrate transfer robot.

[0032] To allow isolation of the buffer chamber 140 interior space from process gases used in the processing assemblies 160 of the transfer chamber assemblies 150, the access between each transfer chamber assembly 150 and the opening 146 of the buffer chamber 140 are selectively sealed by respective fluid shut-off valves, such as slit valves. The fluid shut-off valves (not shown) are located within the walls of each transfer chamber assembly 150, within the walls of the buffer chamber 140, or as a separate assembly between the buffer chamber 140 and the transfer chamber assembly 150. Additionally, the fluid shut-off valves can include a plate and seal assembly 292 (FIGS. 2A-3B) pressed by a ram selectively operable to selectively cover and seal or not cover the respective opening 146. The plate and seal assembly 292 thereby selectively seals or allows fluid communication between the transfer chamber assembly 150 and the buffer chamber 140, and further, when retracted from the opening 146, allows a support blade or end effector on the buffer chamber transfer robot 148 within the buffer chamber 140 to transfer a substrate through the opening 146.

[0033] 1A, including the arrangement and structure of the central transfer apparatus 145, the multiple processing assemblies 160, and the chamber pumps 165 within each transfer chamber assembly 150. However, alternative embodiments of the transfer chamber assembly 150 may be utilized.

[0034] 2A-2B are schematic cross-sectional views of a portion of a transfer chamber assembly 150 and a processing assembly 160a according to a first embodiment. In the first embodiment, the transfer chamber assembly 150 includes a robot, such as a central transfer device 145 (FIGS. 1A and 1B), for transferring a substrate 200 to a substrate support surface 223 of a support chuck 224a in the processing assembly 160a. The support chuck 224a is attached to a substrate lift assembly 220a in the processing assembly 160a. The processing assembly 160a further includes a magnetron assembly 295 and a mini-processing chamber 216a.

[0035] Figure 2A shows the processing assembly 160a while the substrate lift assembly 220a is in a lowered substrate receiving position, where a substrate 200 is located below the mini processing chamber 216a. Figure 2B shows the processing assembly 160a while the substrate lift assembly 220a is in a raised substrate processing position, where a substrate 200 is disposed within the mini processing chamber 216a. In the configuration shown in Figures 2A-2B, the support chuck 224a remains attached to the substrate lift assembly 220a both during transfer of the substrate 200 between the processing assemblies 160 and during substrate processing within the mini processing chamber 216a.

[0036] The processing assembly 160a in Figure 2A includes a magnetron assembly 295, a portion of the transfer chamber volume 236, a portion of the transfer chamber assembly 150, a mini-processing chamber 216a, a support chuck 224a, and a substrate lift assembly 220a. The processing assembly 160 in Figure 2A shows the substrate lift assembly 220a in a substrate receiving position, with the support chuck 224a and substrate 200 present within the transfer chamber volume 236. An opening 201 and a plate and seal assembly 292 are disposed adjacent to the processing assembly 160a.

[0037] The opening 201 is on an outer sidewall of the transfer chamber assembly 150. The opening 201 is sized to allow passage of the substrate 200 and a robot arm carrying the substrate 200. The robot arm may be the transfer robot 185 in the front end robot chamber 180 (FIG. 1A) or the buffer chamber transfer robot 148 in the buffer chamber 140 (FIG. 1B). The opening 201 is sealed from the front end robot chamber 180 and / or the buffer chamber 140 during movement of the substrate 200 to and from the transfer chamber assembly 150. The opening 201 is sealed using a plate and seal assembly 292 located outside the opening 201. In an embodiment in which a buffer chamber 140 is utilized, the opening 201 is adjacent to and aligned with the respective opening 146 of the buffer chamber 140.

[0038] A transfer chamber assembly lid 302 is disposed above the central transfer device 145 (FIGS. 1A-1B). The transfer chamber assembly lid 302 is connected to the top of the transfer chamber assembly 150 and can be removed for maintenance and replacement of components within the transfer chamber assembly 150.

[0039] In some embodiments, the mini-processing chamber 216a is a physical vapor deposition (PVD) processing chamber in which material is sputtered from a sputtering target assembly 203 to form a layer on a substrate 200 exposed within the mini-processing chamber 216a. The mini-processing chamber 216a thus includes a sputtering target assembly 203, a dielectric isolator 204, a liner 206, a containment member 208, a cover ring 210, a magnetron assembly 295, and a lid member 296. A chamber space 278 is included within the mini-processing chamber 216a.

[0040] The sputtering target assembly 203 is disposed above the chamber volume 278 and forms a cover surrounding the chamber volume 278, where the sputtering target assembly 203 is circular when viewed from above and has a flat, or substantially flat, upper surface. The annular surface of the sputtering target assembly 203 is disposed on a dielectric isolator 204, which is a dielectric material having sufficient dielectric strength and size to electrically insulate the sputtering target assembly 203 from the liner 206.

[0041] The sputtering target assembly 203 is connected to an AC power supply 286. The AC power supply 286 provides power to the sputtering target assembly 203 such that the sputtering target assembly 203 is biased during substrate processing.

[0042] The dielectric isolator 204 is annular in shape such that the dielectric isolator 204 has a radial width and surrounds a hollow inner diameter. The dielectric material of the dielectric isolator 204 is any material capable of electrically insulating the sputtering target assembly 203 from the liner 206 and also providing thermal insulation therebetween. The liner 206 here includes a portion that extends at least partially below the dielectric isolator 204 to form a support ledge that physically supports the dielectric isolator 204. The liner 206 is in mechanical contact with at least a portion of the top surface 218 of the transfer chamber assembly 150. The liner 206 is also in contact with a portion of the containment member 208 that provides shielding between the flux of sputtering material from the sputtering target assembly 203 and the inner facing sidewall 217 of the liner 206.

[0043] The sputtering target assembly 203 is disposed between the magnetron space 299 defined by the magnetron support wall 289 and the lid member 296 and the chamber space 278. An end of the sputtering target 202 in the sputtering target assembly 203 is located inside the containment member 208 and the dielectric isolator 204. The sputtering target 202 is comprised of a material that is deposited on the surface of the substrate 200 during sputtering. The sputtering target 202 may be a copper sputtering target for deposition as a seed layer in high aspect ratio features formed in the substrate 200. The sputtering target 202 may also include other materials, such as a copper doped aluminum sputtering target. Alternatively, the sputtering target 202 is comprised of a liner / barrier material used to cover the surfaces of a trench, via or contact opening in a dielectric layer, and the material deposited on the surfaces of the trench, via or contact opening is comprised of the target material, or in some cases, a compound formed from the target material. For example, a tantalum layer overlain by a tantalum nitride layer may be formed on the surfaces of a trench, via, or contact opening by first sputtering a target in an inert gas environment and then adding nitrogen into the process space. Alternatively, a first metal of a first target material is sputtered onto a substrate 200 including the surfaces of a trench, via, or contact opening. The substrate 200 is moved to a second chamber having the same or a different target composition, and a reactant such as nitrogen is introduced into the process space to form a compound layer over a non-compound layer.

[0044] The liner 206 is an annular member. The liner 206 includes a main support 225 disposed on the upper surface 218 of the transfer chamber assembly 150. The main support 225 includes an upper annular ledge on which the dielectric isolator 204 is disposed. The dielectric isolator 204 is physically supported by the main support 225 of the liner 206. The liner 206 includes a downwardly projecting annular portion 226. The downwardly projecting annular portion 226 is disposed downwardly from the main support 225 of the liner 206. The downwardly projecting annular portion 226 is a vertical portion extending from a bottom surface of the main support 225. A horizontal ring portion 227 of the liner 206 is disposed at a lower end of the downwardly projecting annular portion 226. The horizontal ring portion 227 extends radially inward from the downwardly projecting annular portion 226 relative to the central axis 205 of the processing assembly. The horizontal ring portion 227 is disposed below the lower annular portion 272 of the containment member 208. In the embodiment shown in FIGS. 2A-2B , the horizontal ring portion 227 of the liner 206 is disposed below a portion of the lower annular portion 272 of the containment member 208. In some embodiments, the horizontal ring portion 227 of the liner 206 may be disposed below the entire lower annular portion 272 of the containment member 208.

[0045] The containment member 208 includes an upper shield body 222 and a lower shield body 229. The upper shield body 222 is a cylindrical body. The upper shield body 222 is disposed radially inward from the main support portion 225 of the liner 206 relative to the central axis 205 of the processing assembly. The upper shield body 222 is disposed above the lower shield body 229. The lower shield body 229 is a U-shaped body.

[0046] The lower shield body 229 includes a first lower cylindrical portion 221, a second lower cylindrical portion 220, and a lower annular portion 272. The first lower cylindrical portion 221 is disposed radially outward of the upper shield body 222 with respect to the processing assembly central axis 205. The first lower cylindrical portion 221 is connected to the bottom of the upper shield body 222. The first lower cylindrical portion 221 is a ring and extends vertically downward from the first upper shield body 222. The lower annular portion 272 is connected to the tip of the first lower cylindrical portion 221 that is the furthest from the upper shield body 222. The lower annular portion 272 is a horizontal member that extends radially inward from the first lower cylindrical portion 221. The lower annular portion 272 is connected to the first lower cylindrical portion 221 and the second lower cylindrical portion 220. The lower annular portion 272 is connected to the lower end of the second lower cylindrical portion 220. The second lower cylindrical portion 220 is a vertical cylindrical wall disposed above the lower annular portion 272. The second lower cylindrical portion 220 is disposed radially inward of the first lower cylindrical portion 221 and is concentric with at least a portion of the first lower cylindrical portion 221.

[0047] A cover ring 210 is disposed over the second cylindrical lower portion 220 of the lower shield body 229. The cover ring 210 prevents unwanted deposition on the edge ring 228 and the sides of the support chuck 224a or lift assembly 220a. The cover ring 210 includes a lower member 215 and an upper member 214. The upper member 214 has a horizontal contact surface 274. The horizontal contact surface 274 is sized to contact the edge ring 228 surrounding the support chuck 224a when the support chuck 224a and lift assembly 220a are in the raised position as shown in FIG. 2B.

[0048] A bellows assembly 250 is disposed below the cover ring 210. The bellows assembly 250 is connected to the lower shield body 229 and is disposed radially inward from the liner 206 and the upper shield body 222 of the containment member 208 relative to the process assembly central axis 205.

[0049] A magnetron assembly 295 is disposed above the sputtering target assembly 203. The magnetron assembly 295 includes a plurality of magnets 294 supported by a base plate 293 connected to a shaft 291 that is axially aligned with the central axis 205 of the mini-processing chamber. The shaft 291 is connected to a motor 287 disposed on the opposite side of a lid member 296 of the magnetron assembly 295. The motor 287 rotates the shaft 291 such that the magnets 294 rotate within a magnetron space 299 that is defined by the lid member 296, the magnetron support wall 289, and the sputtering target assembly 203. In one implementation, the magnets form a magnetic field within the mini-processing chamber 216a near the front of the sputtering target assembly 203 and sustain a plasma that is generated therein, which causes a significant flux of ionized gas atoms to impinge on the sputtering target assembly 203 and cause sputter ejection of the target material. The magnets are rotated about the central axis 205 of the mini-processing chamber to improve the uniformity of the magnetic field across the surface of the sputtering target assembly 203 .

[0050] Fluid is pumped through the magnetron space 299 to control the temperature of the magnets 294 and the sputtering target assembly 203. Fluid is pumped into the magnetron space 299 by a fluid supply 297 and out of the magnetron space by a fluid extractor 298. The fluid supply 297 and fluid extractor 298 are on either side of the magnetron assembly 295, which causes the fluid to flow through the magnetron space 299, over the top of the sputtering target assembly 203, and over the magnets 294. The fluid may be DI water or other suitable cooling fluid.

[0051] The magnetron assembly 295, the AC power supply 286, the sputtering target assembly, and the containment member 208 form the process components 285. The process components 285 can be selectively modified to perform various processes within the chamber volume 278. In some embodiments, the process components 285 can be modified to include a showerhead assembly, a remote plasma source, multiple heating elements, or sensors. In the embodiment depicted in FIGS. 2A-6E, the process components 285 are configured to enable a PVD process. In alternative embodiments, the process components 285 are modified to enable the processing assemblies 160a, 160b to perform a CVD process, an ALD process, an etching process, an annealing process, or a cleaning process.

[0052] The support chuck 224a and substrate lift assembly 220a collectively include an edge ring 228, a stepped sealing ring 264, a lift assembly shaft 238, a lift top 230, electrical lines 240, a backside gas outlet 243, and a gas line 242. A substrate 200 is disposed on the substrate support surface 223 of the support chuck 224a.

[0053] The support chuck 224a supports the substrate 200 and the edge ring 228. In the illustrated embodiment, the support chuck 224a is an electrostatic chuck such that the support chuck 224a is biased by a power source, such as a power source 244. The support chuck 224a is biased such that the substrate 200 is chucked and held in place on the substrate support chuck 224a during processing and movement of the lift assembly 220a. The support chuck 224a may also include a heating element (not shown) and a thermal sensor (not shown). The heating element and temperature sensor may also be connected to the power source 244 and may assist in maintaining a uniform and controlled temperature across the substrate support surface 223 and the substrate 200 placed thereon.

[0054] The lift assembly 220a includes an actuator 246, such as one or more motors, that enables vertical and rotational movement of the support chuck 224a, such that the support chuck 224a can move vertically up and down through the transfer chamber volume 236 and rotate about the central axis 205.

[0055] The support chuck 224a has a planar upper surface that forms a substrate support surface 223. The support chuck 224a has an outer ledge 266 disposed about the periphery of the substrate support surface 223 of the support chuck 224a. The outer ledge 266 is vertically offset from the substrate support surface 223. The outer ledge 266 is sized to receive an edge ring 228. The edge ring 228 is disposed radially outward from the substrate support surface 223 of the support chuck 224a. The edge ring 228 is sized to contact a horizontal contact surface 274 of the cover ring 210 when the lift assembly 220a and support chuck 224a are in the raised processing position.

[0056] The support chuck 224a is disposed on top of the lift assembly 220a, which in turn disposes the support chuck 224a on top of the lift top 230. The lift top 230 is disposed below the entire bottom surface 261 of the support chuck 224a. The lift top 230 is disposed on top of and surrounds the lift assembly shaft 238. The lift assembly shaft 238 is a vertical shaft. An electrical line 240 and a gas line 242 are disposed within the lift assembly shaft 238. The electrical line 240 may include multiple electrical connections, such as wires. The electrical line 240 connects the support chuck 224a to a power source 244. The electrical line 240 and the power source 244 provide power to the support chuck 224a for biasing and heating. The power source 244 may also provide power for movement of the lift assembly 220a.

[0057] The gas line 242 is connected to a purge gas source 241. The gas line 242 is in fluid communication with a backside gas outlet 243. Purge gas supplied to the gas line 242 by the purge gas source 241 flows through the backside gas outlet 243 to supply backside gas to a bottom surface of the substrate 200 placed on the substrate support surface 223.

[0058] Stepped sealing ring 264 is disposed radially outward of and connected to support chuck 224a when viewed relative to processing assembly central axis 205. Stepped sealing ring 264 is disposed below bellows assembly 250 and has an annular surface area that overlaps bellows assembly 250 such that stepped sealing ring 264 forms a seal with bellows assembly 250 when support chuck 224a and lift assembly 220a are raised into the processing position as shown in FIG.

[0059] In some embodiments, lift pins (not shown) may be disposed in lift pin holes formed through the support chuck 224a, the lift top 230 of the lift assembly 220a, and the main shield portion 251 of the lower seal shield 232 of the chuck seal assembly 235. The lift pins may extend to the substrate support surface 223. The lift pins may be configured to lift and lower the substrate 200 between processing steps or when the substrate is loaded or unloaded from the transfer chamber assembly 150. In some embodiments, other substrate transfer mechanisms may be used instead of the lift pins. In this configuration, the lift pins are omitted to reduce leakage of process gas between the transfer chamber volume 236 and the chamber volume 278 during substrate processing.

[0060] FIG. 2B includes the same components as FIG. 2A. FIG. 2B shows the processing assembly 160a when the lift assembly 220a and support chuck 224a are in an upper resting or processing position. When the lift assembly 220a is in the upper position, the stepped seal ring 264 and the bellows assembly 250 contact each other to form a seal. When the lift assembly 220a is moved to the upper position, the stepped seal ring 264 is forced upward to contact the surface of the bellows assembly 250. The edge ring 228 also moves upward to contact the horizontal contact surface 274 of the cover ring 210. The sealing surfaces of both the stepped seal ring 264 and the bellows assembly 250 are parallel to the transfer plane of the substrate 200 through the transfer chamber space 236 between the processing assemblies 160. The transfer plane of the substrate 200 is a horizontal plane parallel to the substrate support surface 223. Substrates 200 are transferred between the processing assemblies along a transfer plane by a robot located within the transfer chamber volume 236 , such as the central transfer device 145 .

[0061] The stepped seal ring 264, the bellows assembly 250, the support chuck 224a, the containment member 208, and the sputtering target assembly 203 define a processing chamber volume 278 when the lift assembly 220a is raised to a substrate processing position. While in the upper position, a process is performed on the substrate 200 in the chamber volume 278.

[0062] 3A-3B are schematic cross-sectional views of a portion of the transfer chamber assembly 150 and the processing assembly 160b according to a second embodiment. FIGS. 3A-3B show the magnetron assembly 295, the AC power supply 286, the opening 201, the plate and seal assembly 292, the transfer chamber volume 236, the transfer chamber assembly 150, the mini processing chamber 216b, the support chuck 224b, and the substrate lift assembly 220b. The magnetron assembly 295, the AC power supply 286, the plate and seal assembly 292, the transfer chamber volume 236, and the transfer chamber assembly 150 are similar to those depicted in FIGS. 2A-2B. The opening 201 is sized to allow the substrate 200, the support chuck 224b, or both the substrate 200 and the support chuck 224b to pass therethrough, thereby allowing the substrate 200 to move across the cluster tool 100a, 100b while resting on the support chuck 224b.

[0063] The processing assembly 160b includes a mini-processing chamber 216b, a magnetron assembly 295, a portion of the transfer chamber volume 236, a portion of the transfer chamber assembly 150, a support chuck 224b, and a substrate lift assembly 220b. The mini-processing chamber 216b of Figures 3A-3B includes a sputtering target assembly 203, a dielectric isolator 204, a liner 206, a containment member 208, a cover ring 210, a magnetron assembly 295, and a lid member 296. Inside the mini-processing chamber 216b is a chamber volume 278. The sputtering target assembly 203, the dielectric isolator 204, the liner 206, the containment member 208, the cover ring 210, the magnetron assembly 295, and the lid member 296 are the same as those depicted in Figures 2A-2B.

[0064] The support chuck 224b, central transfer apparatus 145, and substrate lift assembly 220b of the embodiment of Figures 3A-3B differ from the support chuck 224a, central transfer apparatus 145, and substrate lift assembly 220a of the embodiment of Figures 2A-2B.

[0065] In Figure 3A, the support chuck 224b and the lift assembly 220b are shown in a substrate receiving position. While in the substrate receiving position, the support chuck 224b and the substrate 200 mounted on the substrate support surface 223 of the support chuck 224b are separated from the lift assembly 220b and can be transported through the transfer chamber assembly 150 by a central transport apparatus 145 (Figures 1A-1B). The central transport apparatus 145 moves the substrate 200 and the support chuck 224b in an orbital path about a central axis 155 of the transfer chamber assembly 150 to transport the substrate 200 mounted on the support chuck 224b to various processing assemblies 160.

[0066] Similar to the embodiment shown in Figures 2A-2B, the substrate lift assembly 220b includes a support chuck 224b located above a lift top 230. An edge ring 228 is mounted on the support chuck 224b around the outer periphery of the substrate 200. A stepped seal ring 264 is disposed around the periphery of the support chuck 224b. The lift assembly 220b includes a lift assembly shaft 238, an electrical line 240, a backside gas outlet 243, and a gas line 242. A substrate 200 is mounted on the substrate support surface 223 of the support chuck 224b.

[0067] The support chuck 224b is disposed on top of the substrate lift assembly 220b. The support chuck 224b supports the substrate 200 and the edge ring 228. The support chuck 224b is an electrostatic chuck such that the support chuck 224b is biased by a power source, such as the power source 244. By biasing the support chuck 224b, the substrate 200 is chucked and held in place on the support chuck 224b during processing and movement of the substrate lift assembly 220b. The support chuck 224b may also include a heating element (not shown) and a thermal sensor (not shown). The heating element and temperature sensor may also be connected to the power source 244 and may assist in maintaining a uniform and controlled temperature across the substrate support surface 223 and the substrate 200 placed thereon.

[0068] The support chuck 224b is connected to an actuator 246, such as one or more motors, that allows vertical and rotational movement of the support chuck 224b, such that the support chuck 224b can move vertically up and down through the transfer chamber volume 236 and rotate about the central axis 205.

[0069] The support chuck 224b has a planar upper surface that forms a substrate support surface 223. The support chuck 224b has an outer ledge 266 disposed about the periphery of the substrate support surface 223 of the support chuck 224b. The outer ledge 266 is vertically offset from the substrate support surface 223. The outer ledge 266 is sized to receive an edge ring 228. The edge ring 228 is disposed radially outward from the substrate support surface 223 of the support chuck 224b. The edge ring 228 is sized to contact a horizontal contact surface 274 of the cover ring 210 when the support chuck 224b is in the raised processing position.

[0070] The support chuck 224b further includes a lower surface 308. The lower surface 308 is opposite and parallel to the substrate support surface 223. The lower surface 308 includes a chuck transport connection 310, a chuck lift assembly connection 312, and a backside gas connection 314. The chuck transport connection 310 is disposed on the lower surface 308 and serves as a connection point between the support chuck 224b and the transport device connection 306 disposed on the central transport device 145. The chuck transport connection 310 serves to electrically and physically connect the support chuck 224b to the central transport device 145. The chuck transport connection 310 provides power to the support chuck 224b while the support chuck 224b is disposed on the central transport device 145. The chuck transfer connection 310 also serves to secure the support chuck 224b to the central transfer apparatus 145 during transfer within the transfer chamber assembly 150, for example, from one processing assembly 160 to another processing assembly 160. In some embodiments, there are multiple chuck transfer connections 310, such as 2-5 chuck transfer connections 310.

[0071] The backside gas connection 314 is in fluid communication with the backside gas outlet 243. The backside gas connection 314 and the backside gas outlet 243 are located at the center of the support chuck 224b such that the backside gas connection 314 and the backside gas outlet 243 are disposed through the center of the support chuck 224b. The backside gas connection 314 is connected to and disposed from the bottom side of the backside gas outlet 243 such that the backside gas connection 314 is disposed below the lower surface 308 of the support chuck 224b.

[0072] The central transfer apparatus 145 includes a top surface 304, a transfer apparatus connection 306, and an apparatus opening 325. The central transfer apparatus 145 transfers the substrate 200 and / or the support chuck 224 between the processing assemblies 160 in the transfer chamber space 236. The central transfer apparatus 145 moves in a horizontal transfer plane parallel to the top surface 304 of the central transfer apparatus 145. The transfer apparatus connection 306 is disposed on the top surface 304 of the central transfer apparatus 145 and surrounds the apparatus opening 325. The transfer apparatus connection 306 is aligned with the chuck transfer connection 310 on the support chuck 224b. In some embodiments, there are multiple transfer apparatus connections 306, such as 2-5 transfer apparatus connections 306. The transfer apparatus connection 306 is electrically connected to a transfer apparatus power supply 330. The transfer apparatus power supply 330 provides power to chuck the substrate 200 to the support chuck 224b during transfer of the support chuck 224b and the substrate 200 through the transfer chamber assembly 150. Chucking the substrate 200 during transfer of the support chuck 224b holds the substrate 200 in place on the substrate support surface 223 and prevents damage to the backside of the substrate 200.

[0073] The backside gas connection 314 and the chuck lift assembly connection 312 are not connected to the central transfer apparatus 145 and are positioned above the apparatus opening 325 while the support chuck 224b is positioned on the central transfer apparatus 145, and the backside gas connection 314 and the chuck lift assembly connection 312 are positioned radially inward of the transfer apparatus connection 306 relative to the central axis 205 of the processing assembly.

[0074] In FIG. 3B, the support chuck 224b is disposed on the lift assembly 220b, such that the support chuck 224b is disposed on the lift top 230. The lift top 230 is disposed on and surrounds the lift assembly shaft 238. The lift assembly shaft 238 is a vertical shaft. An electrical line 240 and a gas line 242 are disposed within the lift assembly shaft 238. The electrical line 240 may include multiple electrical connections, such as wires. The electrical line 240 connects the support chuck 224b to a power source 244. The electrical line 240 and the power source 244 provide power to the support chuck 224b for biasing and heating. The power source 244 may also provide power to an actuator 246 for movement of the lift assembly 220b.

[0075] The gas line 242 is connected to a purge gas source 241. The gas line 242 is in fluid communication with a backside gas outlet 243 through a backside gas connection 314. The backside gas connection 314 is connected to the lift assembly 220b through a gas connection receptacle 326. The gas connection receptacle 326 is mounted on the upper surface 320 of the lift top 230. Once the backside gas connection 314 is coupled to the gas connection receptacle 326, the purge gas source 241 is in fluid communication with the backside gas outlet 243. The purge gas supplied to the gas line 242 by the purge gas source 241 flows through the backside gas outlet 243 to supply backside gas to the bottom surface of the substrate 200 placed on the substrate support surface 223.

[0076] The lift assembly 220b further includes a chuck connection 318. The chuck connection 318 is disposed on the upper surface 320 of the lift top 230 of the lift assembly 220b. The chuck connection 318 is electrically connected to the power source 244 by the electrical line 240. The chuck connection 318 provides power to the support chuck 224b when the support chuck 224b is connected to the lift assembly 220b by the chuck connection 318 and the lift assembly connection 312. When the lift assembly 220b rises from the lower receiving position to the central transfer device 145 and passes through the device opening 325 to contact the lift assembly connection 312, the chuck connection 318 and the lift assembly connection 312 are coupled to each other. In this case, the support chuck 224b is separated from the central transfer device 145 while the lift assembly 220b rises through the device opening 325 and moves to the processing position shown in FIG. 3B.

[0077] The support chuck 224b is connected to the lift assembly 220b by a coupling between the lift assembly connection 312 and the chuck connection 318 and a coupling between the backside gas connection 314 and the gas connection receiver 326. The lift assembly connection 312 and the backside gas connection 314 couple to the chuck connection 318 and the gas connection receiver 326 when the lift assembly 220b is raised, such that the lift assembly connection contacts the lift assembly connection 318 and the backside gas connection 314 contacts the gas connection receiver 326.

[0078] The stepped sealing ring 264 is disposed radially outward of the support chuck 224b when viewed relative to the central axis 205 of the processing assembly, and is connected to the support chuck 224a. The stepped sealing ring 264 is disposed below the bellows assembly 250 and has an annular surface area that overlaps with the bellows assembly 250, such that the stepped sealing ring 264 forms a seal with the bellows assembly 250 when the support chuck 224b and lift assembly 220b are raised to the processing position, as shown in FIG. 3B. While the support chuck 224b is disposed on the central transfer apparatus 145, the stepped sealing ring 264 contacts the upper surface 316 of the central transfer apparatus 145. In some embodiments, the stepped seal ring 264 supports at least a portion of the weight of the support chuck 224b while the lift assembly 220b is in the lower transfer position and supports the support chuck 224b in the transfer chamber assembly 150 during transfer of the support chuck 224b and the substrate 200.

[0079] In some embodiments, lift pins (not shown) may be disposed in lift pin holes formed through the support chuck 224b, the lift top 230 of the lift assembly 220b, and the main shield portion 251 of the lower seal shield 232 of the chuck seal assembly 235. The lift pins may extend to the substrate support surface 223. The lift pins are configured to lift and lower the substrate 200 between processing steps or when the substrate is loaded or unloaded from the transfer chamber assembly 150. In some embodiments, other substrate transfer mechanisms may be used instead of the lift pins. In this configuration, the lift pins are omitted to reduce leakage of process gas between the transfer chamber space 236 and the chamber space 278 during substrate processing. In embodiments as disclosed herein, the support chuck 224a and the substrate 200 are transferred into and out of the transfer chamber space 236 using a robot with chucking capabilities similar to the central transfer device 145. In some embodiments, the lift pins are configured to lift at least a portion of the support chuck 224b with the substrate 200 from the lift assembly 220b. The central transfer apparatus 145 remains disposed within the processing assembly 160b while the substrate 200 is processed within the chamber volume 278. In some embodiments, the central transfer apparatus 145 is a carousel apparatus that transfers multiple substrates 200 between the processing assemblies 160 of the transfer chamber assembly 150. The central transfer apparatus 145 is configured to remain in a lowered transfer position during vertical movement of the lift assembly 220b and during processing of the substrate 200, such that the central transfer apparatus 145 remains in place while the support chuck 224b and the substrate 200 are vertically transferred to a processing position during substrate processing.

[0080] The embodiment of Figures 3A-3B allows for removal of the support chuck 224b from the substrate lift assembly 220b. The support chuck 224b is coupled to an arm of the central transfer apparatus 245 during transfer of the substrate 200 and the support chuck 224b between the processing assemblies 160. Coupling the support chuck 224b along with the substrate 200 to the central transfer apparatus 245 reduces wear on the top surface of the support chuck 224b and allows the support chuck 224b to be utilized for a greater amount of time before replacement or maintenance is required. It has also been found that retaining the substrate 200 on the support chuck 224b reduces damage to the backside of the substrate 200 because the substrate 200 is lifted from and placed on the support chuck 224b less frequently. The sealing surfaces of both the stepped seal ring 264 and the bellows assembly 250 are parallel to the transfer plane through which the substrate 200 passes through the transfer chamber volume 236 between the processing assemblies 160 .

[0081] 4A-4C are schematic, enlarged cross-sectional views of the interface between the seal ring 264 and the bellows assembly 250 according to FIGS. 2B and 3B. The interface between the edge ring 228 and the cover ring 210 is also shown. FIG. 4A shows the support chucks 224a-b in a first position. FIG. 4B shows the support chucks 224a-b in a second position. FIG. 4C shows the support chucks 224a-b in a third position.

[0082] In FIG. 4A, the first position of support chucks 224a-b is below the processing position such that seal ring 264 is not yet in contact with bellows assembly 250 and bellows assembly 250 is not in a compressed or expanded state.

[0083] The stepped seal ring 264 includes an outer ledge 402 and a stepped portion 404. An inner radial wall 406 of the stepped seal ring 264 is disposed adjacent to and in contact with an outer radial wall 408 of the support chuck 224a-b. The outer ledge 402 is a horizontal ledge that extends radially outward from the stepped portion 404 of the stepped seal ring 264. The stepped portion 404 extends vertically upward from the chuck seal face 422 of the outer ledge 402.

[0084] A bottom surface 428 of the stepped seal ring 264 is the bottom surface of both the outer ledge portion 402 and the stepped portion 404. The bottom surface 428 is coplanar with a chuck bottom surface 432. The chuck bottom surface 432 can be the lower surface 308 of the support chuck 224b in Figures 3A-3B or the bottom surface 261 of the support chuck 224a in Figures 2A-2B.

[0085] The top surface 430 of the stepped seal ring 264 is the top surface of the stepped portion 404. The top surface 430 is flush with the outer ledge 266 of the support chuck 224a-b. The edge ring 228 is partially disposed on the top surface 430 of the stepped seal ring 264. The chuck seal surface 422 is the top surface of the outer ledge portion 402. The chuck seal surface 422 is a horizontal plane. The chuck seal surface 422 is vertically offset from the top surface 430 of the stepped seal ring 264. The stepped seal ring 264 can be a metallic or ceramic material, whereby the surface of the stepped seal ring 264 can be a metallic or ceramic material. When a metallic material is utilized, the stepped seal ring 264 can be an aluminum or anodized aluminum material, a stainless steel material, or an Inconel alloy material. The stainless steel material can be a 6000 series aluminum, such as 6060 or 6061 aluminum. When a ceramic material is utilized, the ceramic material can be aluminum oxide, aluminum nitride, or quartz (SiO2). The chuck seal surface 422 has a surface roughness of about 10 Ra or less, such as about 2 Ra to about 10 Ra, for example, about 4 Ra to about 8 Ra.

[0086] The edge ring 228 is disposed over the support chuck 224a-b and the stepped seal ring 264 such that the edge ring bottom surface 438 is disposed over the stepped seal ring top surface 430 and the outer ledge 266 of the support chuck 224a-b. The edge ring 228 includes an inner top surface 436, an intermediate top surface 424, and an outer top surface 434. The inner top surface 436 is disposed radially inward from both the intermediate top surface 424 and the outer top surface 434. The intermediate top surface 424 is disposed radially inward from the outer top surface 434. The intermediate top surface 424 is a curved top surface such that the intermediate top surface 424 forms a groove between the inner top surface 436 and the outer top surface 434. The inner top surface 436 is coplanar with the outer top surface 434. The inner top surface 436 is coplanar with the substrate support surface 223. The outer upper surface 434 is sized to receive the horizontal contact surface 274 of the upper member 214 of the cover ring 210 .

[0087] Bellows assembly 250 includes an upper bellows ring 410, a bellows 412, and a lower bellows ring 414. Bellows 412 is disposed between upper bellows ring 410 and lower bellows ring 414. Upper bellows ring 410 is disposed above lower bellows ring 414. Upper bellows ring 410 is disposed radially inward from second lower cylindrical portion 220 of containment member 208.

[0088] The upper bellows ring 410 has an upper seal surface 420 disposed on a bottom surface of the upper bellows ring 410. The upper seal surface 420 is shaped to form a split seal with a chuck seal surface 422 of the stepped seal ring 264. The upper seal surface 420 is parallel to the chuck seal surface 422 of the stepped seal ring 264, and the upper seal surface 420 has an annular surface that overlaps at least a portion of the annular surface of the chuck seal surface 422 of the stepped seal ring 264. The upper bellows ring 410 can be a metallic material such that the surface of the upper bellows ring 410 is an aluminum, stainless steel, or Inconel material. The aluminum can be anodized aluminum. The stainless steel material can be a 6000 series stainless steel, such as 6060 or 6061 stainless steel. The upper seal surface 420 has a surface roughness of about 10 Ra or less, such as about 2 Ra to about 10 Ra, such as about 4 Ra to about 8 Ra. The upper seal surface 420 and the chuck seal surface 422, along with the stepped seal ring 264, can have similar or dissimilar materials, such that a seal is formed between the similar or dissimilar materials. The materials of the stepped seal ring 264 and the chuck seal surface 422 can be selected to improve the seal between the upper seal surface 420 and the chuck seal surface 422 or to reduce the likelihood of the chuck seal surface 422 deforming.

[0089] The chuck seal surface 422 is parallel to the bottom surface of the sputtering target 202. As shown in Figures 2A-2B and 3A-3B, the substantially parallel orientation / alignment of the chuck seal surface 422, the upper seal surface 420, the substrate support surface 223, and the bottom surface of the sputtering target 202 allows for a repeatable and reliable seal to be formed, while allowing angular alignment between the substrate support surface 223 and the bottom surface of the sputtering target 202 to be easily formed and / or maintained during processing. The chuck seal surface 422 and the upper seal surface 420 are also parallel to the transfer plane of the substrate and / or support chuck 224b. The transfer plane was previously described and is the horizontal plane of transfer between the processing assemblies 160.

[0090] The lower bellows ring 414 is connected to the lower annular portion 272 of the containment member 208. The lower bellows ring 414 has an upper surface 418 that is disposed against a lower surface 416 of the lower annular portion 272 of the containment member 208. The upper surface 418 of the lower bellows ring 414 is bonded to the lower surface 416 of the lower annular portion 272 of the containment member 208.

[0091] Bellows 412 is disposed between upper bellows ring 410 and lower bellows ring 414 such that bellows 412 is attached to an upper surface 418 of lower bellows ring 414 and an upper sealing surface 420 of upper bellows ring 410. Bellows 412 forms a barrier between upper bellows ring 410 and lower bellows ring 414 such that gas cannot pass through bellows 412. Bellows 412 has a spring constant (k) of about 50 lbf / in to about 80 lbf / in, such as about 55 lbf / in to about 75 lbf / in, such as about 60 lbf / in to about 70 lbf / in. As described below, in some embodiments, the spring constant of bellows 412 is selected such that a desired sealing force is achieved within a desired range of extension of bellows 412. In some embodiments, the spring constant (k) of the bellows 412 varies according to the temperature of the process carried out in the chamber volume 278. The bellows 412 varies in temperature with the temperature in the chamber volume 278. In some embodiments, when the operating temperature in the chamber volume 278 is between about 350° C. and about 600° C., the spring constant of the bellows 412 is between about 55 lbf / in and about 75 lbf / in, such as between about 60 lbf / in and about 70 lbf / in. In other embodiments, when the chamber volume 278 is at an operating temperature between about 150° C. and about 250° C., the spring constant of the bellows 412 is between about 35 lbf / in and about 55 lbf / in, such as between about 40 lbf / in and about 50 lbf / in. In yet another embodiment, the spring constant of bellows 412 is between about 15 lbf / in and about 35 lbf / in, such as between about 20 lbf / in and about 30 lbf / in, when the operating temperature within chamber volume 278 is between about 20° C. and about 150° C. The change in the spring constant of bellows 412 over various temperature ranges is due to the change in Young's modulus of the material. Bellows 412 may also thermally expand or contract.

[0092] The bellows 412 of the bellows assembly 250 is configured to conform in at least one direction, such as the vertical direction (i.e., the Z direction), and is configured to prevent gas from passing through the bellows 412 during processing. The bellows assembly 250 can be a stainless steel or Inconel bellows assembly welded at both ends to an upper bellows ring 410 and a lower bellows ring 414. The flexible nature of the bellows assembly 250 allows it to accommodate any misalignment or planarity differences between the chuck seal surface 422 of the stepped seal ring 264 and the upper seal surface 420 of the process chamber wall, thereby forming a reliable and repeatable seal at the upper seal surface 420. In the embodiment of FIGS. 2-5, the bellows assembly 250 is an elongated bellows assembly, and the bellows 412 elongates while sealing the process chamber volume 278.

[0093] While in the first position of Figure 4A, the stepped seal ring 264 does not exert any force on the upper seal surface 420. Without any force between the stepped seal ring 264 and the upper seal surface 420, there is no seal between the chamber space 278 and the transfer chamber space 236. In the first position of Figure 4A, the chamber space 278 and the transfer chamber space 236 are in fluid communication. When the chamber space 278 and the transfer chamber space 236 are in fluid communication, gas provided through the process gas inlet 426 may leak into the transfer chamber space 236.

[0094] 4A, the bellows 412 has a length of about 1.1 inches to about 1.7 inches, such as about 1.2 inches to about 1.6 inches, such as about 1.3 inches to about 1.5 inches. The bellows 412 is in a relaxed state and there are no forces from the support chucks 224a-b affecting the length of the bellows.

[0095] In Figure 4B, support chucks 224a-b are in a second position such that stepped seal ring 264 contacts upper seal surface 420 of upper bellows ring 410. The second position is a vertical position between the first position of Figure 4A and the third position of Figure 4C.

[0096] In addition to the stepped seal ring 264 contacting the upper sealing surface 420 of the upper bellows ring 410, the outer upper surface 434 of the edge ring 228 is disposed against the horizontal contact surface 274 of the cover ring 210. The cover ring 210 protects the bellows assembly 250 from process radicals within the chamber volume 278. The contact of the cover ring 210 with the edge ring 228 enhances protection of the bellows assembly.

[0097] When the support chucks 224a-b are raised to the second position, the upper bellows ring 410 is forced upward, and the bellows 412 is extended. The edge ring 228, which is in contact with the cover ring 210, also forces the cover ring 210 upward. When the cover ring 210 is raised, the bottom surface 454 of the lower member 215 of the cover ring 210 is vertically lower than the top surface 455 of the second lower cylindrical portion 220 of the containment member 208. Having the bottom surface 454 of the lower member 215 vertically lower than the top surface 455 of the second lower cylindrical portion 220 of the containment member 208 ensures that the bellows 412 of the bellows assembly 250 is reliably protected from process radicals.

[0098] In the second position of FIG. 4B, the bellows 412 extends to a length of about 1.2 inches to about 1.8 inches, such as from about 1.3 inches to about 1.7 inches, such as from about 1.4 inches to about 1.6 inches.

[0099] A low force 452 is applied by the stepped seal ring 264 on the upper seal surface 420 as the stepped seal ring 264 contacts the upper seal surface 420 of the upper bellows ring 410. The low force 452 provides at least a partial seal between the chamber volume 278 and the transfer chamber volume 236. The seal between the chamber volume 278 and the transfer chamber volume 236 allows some processes to be performed that do not require a pressure different from the pressure in the transfer chamber volume 236. Additionally, a purge of the chamber volume 278 may be initiated while the support chucks 224a-b are being raised to a final processing position.

[0100] Figure 4C shows support chucks 224a-b in a third position, higher than the second position, such that stepped seal ring 264 contacts upper seal surface 420 of upper bellows ring 410, and support chucks 224a-b continue to move upwardly to extend bellows 412. The third position is a vertical position above both the first position of Figure 4A and the second position of Figure 4B.

[0101] In addition to the stepped seal ring 264 contacting the upper seal surface 420 of the upper bellows ring 410 , the outer upper surface 434 of the edge ring 228 is disposed against the horizontal contact surface 274 of the cover ring 210 .

[0102] When the support chucks 224a-b are raised to the third position, the upper bellows ring 410 is forced upward and the bellows 412 extends to a point of extension greater than in the second position. The edge ring 228 in contact with the cover ring 210 also forces the cover ring 210 upward. When the cover ring 210 is raised, the bottom surface 454 of the lower member 215 of the cover ring 210 is still vertically below the top surface 455 of the second cylindrical lower portion 220 of the containment member 208.

[0103] In the third position of Figure 4C, the bellows 412 extends to a length of about 1.7 inches to about 2.3 inches, such as about 1.8 inches to about 2.2 inches, such as about 1.9 inches to about 2.1 inches. The total stroke of the bellows 412 from the first position of Figure 4A to the third position of Figure 4C is about 0.5 inches to about 1.1 inches, such as about 0.6 inches to about 1.0 inches, such as about 0.7 inches to about 0.9 inches.

[0104] With the stepped seal ring 264 in contact with the upper seal surface 420 of the upper bellows ring 410 and the bellows 412 stretching further, a large force 453 is applied by the stepped seal ring 264 on the upper seal surface 420. The large force 453 is larger than the small force 452 in the second position of FIG. 4B. The large force 453 provides a complete seal between the chamber space 278 and the transfer chamber space 236 such that the chamber space 278 and the transfer chamber space 236 are fluidly separated. The seal between the chamber space 278 and the transfer chamber space 236 allows a process to be performed that requires a different pressure than the pressure in the transfer chamber space 236. Furthermore, due to the overall design disclosed herein, the spacing between the surface of the substrate placed on the substrate support surface 223 and the surface of the target can be adjusted to improve process results obtained during a substrate processing step (e.g., a PVD deposition step). In some embodiments, the spring constant of bellows 412 is selected to achieve a desired high force 453 when the substrate is positioned within a desired range of target-to-substrate spacing.

[0105] The structural integrity of both the chuck seal surface 422 and the upper seal surface 420 is maintained even after processing of large volumes of substrates in the processing assembly 160. The chuck seal surface 422 and the upper seal surface 420 exhibit little warping over time, and therefore maintain a high quality seal between the chamber volume 278 and the transfer chamber volume 236 throughout the useful life of the chamber. The warping may be a curvature of one of the upper seal surface 420 and the chuck seal surface 422, or may be unwanted wear of the chuck seal surface 422 and the upper seal surface 420. Unwanted curvature or wear would cause leakage within the seal formed between the chuck seal surface 422 and the upper seal surface 420. Warping of the chuck seal surface 422 and the upper seal surface 420 is at least partially minimized by the use of the bellows assembly 250. The bellows assembly 250 minimizes the sudden application of forces to either the chuck seal face 422 or the upper seal face 420. The bellows assembly 250 distributes the impact forces that form the seal over a longer period of time, thus reducing deformation of the chuck seal face 422 and the upper seal face 420.

[0106] The seal ring 264 and the chuck seal surface 422 maintain planarity over a wide range of temperatures and pressures within both the transfer chamber volume 236 and the chamber volume 278. The seal ring 264 also maintains planarity over a wide range of positions of the support chucks 224a-b. In embodiments in which the support chucks 224a-b are moved during substrate processing, the flexibility of the bellows 412 allows both the chuck seal surface 422 and the upper seal surface 420 of the seal ring 264 to remain planar and parallel to one another over the range of positions of the support chucks 224a-b. If it is desired to move the substrate during processing, the support chucks 224a-b can be moved. The seal ring 264 and the chuck seal surface 422 also maintain planarity as the temperature of the substrate 200 and the substrate support surface 223 increases during substrate processing. As the position of the chuck seal face 422 changes due to thermal expansion and contraction, the bellows assembly 250 passively adjusts position to accommodate the movement and maintain a seal.

[0107] The upper bellows ring 410 is considered a process chamber wall, which can be any wall that defines a chamber space within the processing assembly 160. In some embodiments, additional process chamber walls include the sputtering target assembly 203, the containment member 208, and the bellows 412.

[0108] 5 is a schematic, enlarged cross-sectional view of the modified interface between seal ring 264 and bellows assembly 250 according to Figures 2B and 3B, as well as gas inlet 426 and gas outlet 536. The interface between seal ring 264 and bellows assembly 250 includes an intermediate exhaust region 502. Gas inlet 426 and gas outlet 536 are disposed through containment member 208.

[0109] The intermediate exhaust area 502 is disposed between the chuck seal surface 422 of the seal ring 264 and the upper seal surface 420 of the upper bellows ring 410 of the bellows assembly 250. The intermediate exhaust area 502 may be a small cavity or pocket formed between the chuck seal surface 422 and the upper seal surface 420. The intermediate exhaust area 502 is formed at the end of an exhaust line 512. The exhaust line 512 is disposed through the upper bellows ring 410, the lower bellows ring 414, the horizontal ring portion 227 of the liner 206, and the sidewall of the transfer chamber assembly 150. The exhaust line 512 is connected to an intermediate region pump 514. The intermediate region pump 514 may be used to evacuate the intermediate exhaust area 502 to a pressure between the pressure of the chamber space 278 and the pressure of the transfer chamber space 236.

[0110] The exhaust line 512 includes a first exhaust line section 504, a second exhaust line section 506, and a third exhaust line section 508. The first exhaust line section 504, the second exhaust line section 506, and the third exhaust line section 508 are all connected to one another and in fluid communication such that the first exhaust line section 504 is connected to and in fluid communication with the second exhaust line section 506, and the second exhaust line section 506 is connected to and in fluid communication with the third exhaust line section 508. The third exhaust line section 508 is connected to and in fluid communication with the mid-zone pump 514.

[0111] The first exhaust line section 504 is disposed through the upper bellows ring 410 such that the first exhaust line section 504 has a first end adjacent the intermediate exhaust area 502 and formed through a portion of the upper seal surface 420, and a second end radially outward of the outer ledge portion 402 of the seal ring 264 and radially inward of the bellows 412 and formed through the upper seal surface 420. The second end of the first exhaust line section 504 connects to a first end of the second exhaust line section 506.

[0112] The second exhaust line section 506 is disposed radially inward of the bellows 412 of the bellows assembly 250. The second exhaust line section 506 extends from the upper bellows ring 410 to the lower bellows ring 414. A second end of the second exhaust line section 506 connects to a first end of a third exhaust line section 508 at an outer wall of the lower bellows ring 414.

[0113] The third exhaust line section 508 is formed through the lower bellows ring 414, the horizontal ring portion 227 of the liner 206, and the sidewall of the transfer chamber assembly 150. The third exhaust line section 508 is a horizontally disposed exhaust line. A second end of the third exhaust line section 508 is connected to a mid-zone pump 514. Alternatively, there may be an additional fourth exhaust line section connecting the third exhaust line section 508 to the mid-zone pump 514. In some embodiments, the mid-zone pump 514 is a vacuum pump.

[0114] The magnetron assembly 295 is disposed on the sputtering target assembly 203 such that the magnetron support wall 289 is disposed above the sputtering target assembly 203 and above the dielectric isolator 204. The magnetron space 299 is fluidly isolated from the chamber space 278 and the transfer chamber space 236. The sputtering target assembly 203 separates the magnetron space 299 from the chamber space 278.

[0115] The chuck seal surface 422 further includes two O-ring grooves 515, 516 and two O-rings 517, 519. The first O-ring groove 515 and the second O-ring groove 516 are disposed in the chuck seal surface 422 of the stepped seal ring 264. The O-ring grooves 515, 516 may be disposed such that the first O-ring groove 515 is radially inward of the intermediate discharge area and the second O-ring groove is radially outward of the intermediate discharge area. The first O-ring groove 515 and the second O-ring groove 516 are disposed with a first O-ring 517 and a second O-ring 519, respectively. The first O-ring 517 and the second O-ring 519 may be KYFLON® O-rings. The first O-ring 517 and the second O-ring 519 abut and seal against the upper seal surface 420 of the upper bellows ring 410. The first O-ring 517 and the second O-ring 519 help form a separation seal between the transfer chamber volume 236 and the chamber volume 278 .

[0116] The transfer chamber space 236 forms a lower exhaust region. A transfer space pump 518 evacuates the transfer chamber space 236 to a predetermined pressure. The transfer space pump 518 is fluidly connected to the transfer chamber space 236 by a transfer space line 510. The transfer space line 510 is formed through a side wall of the transfer chamber assembly 150. In some embodiments, the transfer space pump 518 is a vacuum pump.

[0117] A gas inlet 426 and a gas outlet 536 are in fluid communication with the chamber space 278. The gas inlet 426 is formed between the upper shield body 222 and the first cylindrical lower portion 221 of the lower shield body 229. The gas inlet 426 may alternatively be formed through either the first cylindrical lower portion 221 of the lower shield body 229 or the upper shield body 222. The gas inlet 426 fluidly connects the chamber space 278 to an inlet plenum 532. The inlet plenum 532 is a plenum that surrounds the chamber space 278 and is formed through the main support 225 of the liner 206. The inlet plenum 532 is at least partially defined by the main support 225 of the liner 206 and an outer surface of the containment member 208. The inlet plenum 532 is fluidly connected to an inlet gas passage 528. The inlet gas passage 528 fluidly connects the inlet plenum 532 to a gas source 520. The inlet gas passage 528 is a sloped gas passage, where the inlet gas passage 528 slopes downward as it approaches the inlet plenum 532 from the gas source 520 .

[0118] The gas source 520 can provide a process gas, a purge gas, a conditioning gas, or a cleaning gas. The gas source 520 can be a plurality of gas sources 520 in some embodiments. The gas source 520 can provide gases such as a silicon-containing gas, a nitrogen-containing gas, and an oxygen-containing gas. The gas source 520 can also provide argon gas, neon gas, and helium gas. When a cleaning gas is provided, the gas source 520 can provide chlorine gas or fluorine gas. Other process gases, purge gases, conditioning gases, or cleaning gases not explicitly described herein may be provided.

[0119] The gas outlet 536 is formed between the upper shield body 222, the sputtering target assembly 203, and the dielectric isolator 204. The gas outlet 536 connects the chamber volume 278 with an exhaust plenum 540. The exhaust plenum 540 surrounds the chamber volume 278 and at least a portion of the upper shield body 222 of the containment member 208. The exhaust plenum 540 is formed through the main support 225 of the liner 206. The exhaust plenum 540 is at least partially defined by an outer wall 548 of the upper shield body 222 of the containment member 208, the dielectric isolator 204, and the main support member 208 of the liner 206. The exhaust plenum 540 fluidly connects the gas outlet 536 to an outlet gas passage 530. The outlet gas passage 530 is formed through the main support 225 of the liner 206. The outlet gas passage 530 fluidly connects the exhaust plenum 540 and the exhaust pump 546 .

[0120] The exhaust pump 546 functions to exhaust gases introduced into the chamber space 278 by the gas source 520. The exhaust pump 546 also functions to exhaust the chamber space 278 to a predetermined process pressure. In some embodiments, the lift assemblies 220a-b are raised to a processing position and the chamber space 278 is fluidly isolated from the transfer chamber space 236. The pressure in the chamber space 278 and the pressure in the transfer chamber space 236 are the same immediately after the lift assemblies 220a-b move to the processing position. In some embodiments, a process is performed at a pressure different from the pressure in the transfer chamber space 236. To change the pressure in the chamber space 278, the exhaust pump 546 can evacuate gases from the chamber space 278 or gases can be introduced by the gas source 520.

[0121] The flow of gas through the process gas inlet 426 is indicated by inlet flow arrows 550. The inlet flow arrows 550 show gas moving down from the process gas inlet 426 between the projection 534 of the upper shield body 222 and the first lower cylindrical portion 221 of the lower shield body 229. In this case, the inlet flow arrows 550 show gas flowing between the cover ring 210 and the projection 534 of the upper shield body 222 into the main portion of the chamber volume 278. The cover ring 210 protects the bellows assembly 250 from the direct introduction of gas from the process gas inlet 426 and directs the gas upward toward the center of the chamber volume 278.

[0122] The flow of gas from the chamber volume 278 through the gas outlets 536 is indicated by exhaust flow arrows 560. The exhaust flow arrows 560 indicate exhaust gases traveling from the chamber volume 278 to the gas outlets 536 in the top corners of the chamber volume 278. In this case, the exhaust flow arrows 560 indicate exhaust gases flowing from the gas outlets 536 to the exhaust plenum 540.

[0123] Cooling channels 524 are disposed within the main support 225 of the liner 206. The cooling channels 524 are disposed between the main support 225 of the liner 206 and a top surface 538 of the transfer chamber assembly 150. The cooling channels 524 may have water or other fluid circulated therethrough to maintain a constant temperature within the liner 206 or transfer chamber assembly 150 during substrate processing.

[0124] An O-ring 522 is disposed in a groove 552 on the top surface 538 of the transfer chamber assembly 150. The O-ring 522 resides between the top surface 538 of the transfer chamber assembly 150 and the main support 225 of the liner 206.

[0125] An O-ring 542 is disposed in a groove 554 on a support ledge 556 of the main support portion 225 of the liner 206. The O-ring 542 is disposed between the main support portion 225 of the liner 206 and the dielectric isolator 204.

[0126] 6A-6E are schematic enlarged cross-sectional views of the interface between the modified edge rings 628a-628e and the alternative cover rings 611a-611e, the lower shield body 229, and the compression bellows assembly 650 according to FIGS. 2B and 3B. Each of the alternative interfaces of FIGS. 6A-6E can be combined with each other or with the embodiments of FIGS. 2B and 3B. The embodiments of FIGS. 6A-6E are embodiments in which the bellows assembly 250 is replaced with the compression bellows assembly 650, the edge ring 228 is replaced with one of several modified edge rings 628a-628e, and the cover ring 210 is replaced with one of several modified cover rings 611a-611e. In some embodiments, the lower shield body 229 is replaced with the modified lower shield body 629.

[0127] A first alternative embodiment is shown in Figure 6A. The first alternative embodiment includes a lower shield body 229 similar to the lower shield body 229 described in Figures 1-5. The lower shield body 229 includes a compression bellows assembly 650 and a bellows stopper 608 attached to the compression bellows assembly 650. The first alternative embodiment also includes a modified cover ring 611a, a modified edge ring 628a, and a modified support chuck 624a. The modified cover ring 611a, the modified edge ring 628a, and the modified support chuck 624a have similar material compositions as the cover ring 210, the edge ring 228, and the support chuck 224 described herein, but include modified geometries.

[0128] The compression bellows assembly 650 includes a bellows 612, an upper bellows ring 605, and a stepped portion 602. The bellows 612 is similar to the bellows 412 described herein. The upper bellows ring 605 is disposed on the top surface 455 of the second lower cylindrical portion 220 of the lower shield body 229. The upper bellows ring 605 extends radially inward from the top surface 455 of the second lower cylindrical portion 220. The bellows 612 is connected to the bottom side of the upper bellows ring 605. The stepped portion 602 is a Z-shaped portion. The stepped portion 602 includes a lower horizontal portion 616, a vertical portion 606, and an upper horizontal portion 607. The lower horizontal portion 616 is connected to the bottom of the bellows 612. The lower horizontal portion 616 extends radially inward from the bellows 612. The vertical portion 606 is attached to the lower horizontal portion 616 radially inward of the bellows 612. The vertical portion 606 of the stepped portion 602 extends upwardly from a tip of the lower horizontal portion 616. The upper horizontal portion 607 is disposed above the vertical portion 606. The upper horizontal portion 607 extends radially inward from the vertical portion 606 of the stepped portion 602. The upper horizontal portion 607 has a lower surface that defines the upper sealing surface 420.

[0129] The bellows 612 of the compression bellows assembly 650 is configured to conform in at least one direction, such as the vertical direction (i.e., Z direction), and is configured to prevent gas from passing through the bellows 612 during processing. The bellows assembly 650 can be a stainless steel or Inconel bellows assembly welded at both ends to the upper bellows ring 605 and the stepped portion 602. The flexible nature of the bellows assembly 250 allows it to accommodate any misalignment or planarity differences between the chuck seal surface 422 of the stepped seal ring 264 and the upper seal surface 420 of the process chamber wall, thereby forming a reliable and repeatable seal at the upper seal surface 420. In the embodiment of FIGS. 6A-6E, the compression bellows assembly 650 contracts while sealing the process chamber volume 278.

[0130] The bellows stop 608 is attached to the annular portion 272 of the lower shield body 229 such that the bellows stop 608 is located at the bottom of the annular portion 272. The bellows stop 608 has a bellows receiving surface 640. The bellows receiving surface 640 stops the extension of the bellows 612 when the modified support chuck 624a is in a lowered position below the processing position and the bellows are in an extended state. The bellows receiving surface 640 is sized to receive the lower horizontal portion 616 of the stepped portion 602.

[0131] The modified cover ring 611a includes an upper member 614a and a lower member 615a. The upper member 614a is a horizontal member. The lower member 615a is a vertical member. The lower member 615a extends downward from a radially outer tip of the upper member 614a. The lower member 615a is radially disposed between the second cylindrical lower portion 220 and the first cylindrical lower portion 221 of the lower shield body 229. The upper member 614a extends over the entire bellows assembly 650 and at least a portion of the modified edge ring 628a. The upper member 614a includes a horizontal contact surface 274 disposed on a bottom side of the upper member 614a. The upper member 614a further includes a downward protrusion 652. A downward projection 652 is disposed on horizontal contact surface 274 and extends from upper member 614 a such that downward projection 652 contacts the top surface of upper horizontal portion 607 .

[0132] The modified edge ring 628a is disposed on the outer ledge 266 of the modified support chuck 624a. The modified edge ring 628a is similar to the edge ring 228 of FIGS. 1-5. The modified edge ring 628a includes an inner top surface 636, an intermediate top surface 624, and an outer top surface 634. The inner top surface 636 is disposed radially inward of both the intermediate top surface 624 and the outer top surface 634. The inner top surface 636 is coplanar with the substrate support surface 223. The intermediate top surface 624 is disposed radially inward of the outer top surface 634. The intermediate top surface 624 is a curved top surface such that the intermediate top surface 624 forms a groove between the inner top surface 636 and the outer top surface 634. The outer top surface 634 is dimensioned to receive at least a portion of the horizontal contact surface 274 of the modified cover ring 611a. The inner upper surface 636 is disposed above the outer upper surface 634 .

[0133] The modified support chuck 624a is similar to the support chuck 224a-b, except that the seal ring is an extension of the outer ledge 266 such that the chuck seal surface 422 is flush with the outer ledge 266 of the modified support chuck 624a.

[0134] When the modified support chuck 624a is raised to the processing position, the upper seal surface 420 of the compression bellows assembly 650 contacts the chuck seal surface 422, compressing the bellows 612. As the bellows 612 is compressed, the modified cover ring 611a is raised. Although not shown in FIG. 6A, the modified edge ring 628a may contact the horizontal contact surface 274 of the modified cover ring 611a.

[0135] A second alternative embodiment is shown in Figure 6B. The second alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 has a compression bellows assembly 650 and a bellows stopper 608 attached to the compression bellows assembly 650. The second alternative embodiment also includes a modified cover ring 611b, a modified edge ring 628b, and a modified support chuck 624b. The modified cover ring 611b, the modified edge ring 628b, and the modified support chuck 624b have similar material compositions as the cover ring 210, the edge ring 228, and the support chuck 224 described herein, but include modified geometries.

[0136] The modified lower shield body 629 is similar to the lower shield body 229 described in Figures 1-5, but has a modified second cylindrical lower section 620 and horizontal bellows mount 603. The modified second cylindrical lower section 620 is similar to the second cylindrical lower section 220 described herein, but the second cylindrical lower section 220 is extended and the horizontal bellows mount 603 is disposed on the second cylindrical lower section 220. The horizontal bellows mount 603 is a horizontal portion that extends radially inward from the modified second cylindrical lower section 620. A modified upper bellows ring 610 is disposed at the bottom of the horizontal bellows mount 603.

[0137] Compression bellows assembly 650 includes bellows 612, modified upper bellows ring 610, and stepped section 602. Bellows 612 is similar to bellows 412 described herein. Modified upper bellows ring 610 rests on the bottom side of horizontal bellows attachment section 603. Bellows 612 is connected to the bottom side of modified upper bellows ring 610. Stepped section 602 is a Z-shaped section. Stepped section 602 includes lower horizontal section 616, vertical section 606, and upper horizontal section 607. Lower horizontal section 616 is connected to the bottom of bellows 612. Lower horizontal section 616 extends radially inward from bellows 612. Vertical section 606 is attached to lower horizontal section 616 radially inward of bellows 612. The vertical portion 606 of the stepped portion 602 extends upwardly from a tip of the lower horizontal portion 616. The upper horizontal portion 607 is disposed above the vertical portion 606. The upper horizontal portion 607 extends radially inward from the vertical portion 606 of the stepped portion 602. The upper horizontal portion 607 has a lower surface that defines the upper sealing surface 420.

[0138] A bellows stopper 608 is attached to the annular portion 272 of the lower shield body 229. The bellows stopper 608 is similar to the bellows stopper 608 shown in Figure 6A.

[0139] The modified cover ring 611b includes an upper member 614b and a lower member 615b. The upper member 614b is a horizontal member. The lower member 615b is a vertical member. The lower member 615b extends downward from a radially outer tip of the upper member 614b. The lower member 615b is radially disposed between the second cylindrical lower portion 220 and the first cylindrical lower portion 221 of the lower shield body 629. The upper member 614b extends over the entire bellows assembly 650 and at least a portion of the modified edge ring 628b. The upper member 614b includes a horizontal contact surface 274 disposed on a bottom side of the upper member 614b.

[0140] The modified edge ring 628b is similar to the edge ring 628a of 6A. The modified edge ring 628b is disposed on the outer ledge 266 of the modified support chuck 624b. The outer top surface 634 of the modified edge ring 628b is dimensioned to receive at least a portion of the horizontal contact surface 274 of the modified cover ring 611b.

[0141] The modified support chuck 624b is similar to the support chucks 224a-b, except that the modified support chuck 624b includes a skirt support surface 660 disposed radially outward from the outer ledge 266. The skirt support surface 660 is disposed below the outer ledge 266 and supports the support chuck skirt portion 609.

[0142] The support chuck skirt 609 includes a support element 661, a step element 662, and a contact element 663. The support element 661 is disposed on the skirt support surface 660 of the modified support chuck 624b. The support element 661 extends radially outward from the skirt support surface 660 of the modified support chuck 624b. The step element 662 is disposed vertically downward from the support element 661. The contact element 663 is connected to and disposed radially outward from a lower end of the step element 662. The contact element 663 includes an upper contact surface 622. The upper contact surface 622 is sized to contact the upper seal surface 420 of the compression bellows assembly 650.

[0143] When the modified support chuck 614b is raised to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the upper contact surface 622, compressing the bellows 612. As the bellows 612 compresses, it raises the modified cover ring 611b by contacting the outer upper surface 634 of the modified edge ring 628b.

[0144] A third alternative embodiment is shown in FIG. 6C. The third alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 is the same modified lower shield body 629 as in FIG. 6B. The modified lower shield body 629 includes a compression bellows assembly 650 as described in FIG. 6B and corresponding text, and a bellows stopper 608 attached to the compression bellows assembly 650 as described in FIG. 6A-6B and corresponding text. The third alternative embodiment also includes a modified cover ring 611c, a modified edge ring 628c, and a modified support chuck 624c. The modified cover ring 611c, the modified edge ring 628c, and the modified support chuck 624c have similar material compositions as the cover ring 210, the edge ring 228, and the support chuck 224 described herein, but include modified geometries.

[0145] The modified cover ring 611c includes an upper member 614c and a lower member 615c. The upper member 614c is a horizontal member. The lower member 615c is a vertical member. The lower member 615c extends downward from a radially outer tip of the upper member 614c. The lower member 615c is radially disposed between the second cylindrical lower portion 220 and the first cylindrical lower portion 221 of the lower shield body 629. The upper member 614c extends over the entire bellows assembly 650 and at least a portion of the modified edge ring 628c. The upper member 614c includes a horizontal contact surface 274 disposed on a bottom side of the upper member 614c.

[0146] The modified edge ring 628c is similar to the edge rings 628a, 628b of Figures 6A-6B. The modified edge ring 628c is disposed on the outer ledge 266 of the modified support chuck 624c. The outer top surface 634 of the modified edge ring 628c is dimensioned to receive at least a portion of the horizontal contact surface 274 of the modified cover ring 611c.

[0147] The modified support chuck 624c is similar to the support chucks 224a-b, except that the stepped seal ring 264 described herein is a contiguous portion of the modified support chuck 624c. The chuck seal surface 422 of the stepped seal ring 264 is sized to contact the upper seal surface 420 of the compression bellows assembly 650.

[0148] When the modified support chuck 614c is raised to the processing position, the upper seal surface 420 of the compression bellows assembly 650 contacts the chuck seal surface 422, compressing the bellows 612. As the bellows 612 compresses, it raises the modified cover ring 611c by contacting the outer upper surface 634 of the modified edge ring 628c.

[0149] A fourth alternative embodiment is shown in FIG. 6D. The fourth alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 is the same modified lower shield body 629 as in FIG. 6B. The modified lower shield body 629 includes a compression bellows assembly 650 as described in FIG. 6B and corresponding text, and a bellows stopper 608 attached to the compression bellows assembly 650 as described in FIG. 6A-6B and corresponding text. The fourth alternative embodiment also includes a modified cover ring 611d, a modified edge ring 628d, and a modified support chuck 624d. The modified cover ring 611d, the modified edge ring 628d, and the modified support chuck 624d have similar material compositions as the cover ring 210, the edge ring 228, and the support chuck 224 described herein, but include modified geometries.

[0150] The modified cover ring 611d includes an upper member 614d and a lower member 615d. The upper member 614d is a horizontal member. The lower member 615d is a vertical member. The lower member 615d extends downward from a radially outer tip of the upper member 614d. The lower member 615d is radially disposed between the second cylindrical lower portion 220 and the first cylindrical lower portion 221 of the lower shield body 629. The upper member 614d extends over the entire bellows assembly 650 and at least a portion of the modified edge ring 628d. The upper member 614d does not extend past the stepped seal ring 264 of the modified support chuck 624d. The upper member 614d includes a horizontal contact surface 274 disposed on the bottom side of the upper member 614d.

[0151] The modified edge ring 628d is disposed on the outer ledge 266 of the modified support chuck 624d. The modified edge ring 628d includes an inner top surface 636, a first step portion 644, a second step portion 646, and a third step portion 648. The first step portion 644 is a horizontal surface disposed parallel to and above the outer ledge 266. The second step portion 646 is a horizontal surface disposed parallel to and vertically below the first step portion 644. The second step portion 646 may be flush with the outer ledge 266. The second step portion 646 includes an outer top surface 634 dimensioned to receive at least a portion of the horizontal contact surface 274 of the modified cover ring 611d. The third step portion 648 is a horizontal surface disposed parallel to the outer ledge 266 and vertically below the second step portion 646. The third step portion 648 may be flush with the bottom chuck surface 432 or may be disposed below the bottom chuck surface 432. The third step portion 648 includes a bellows support surface 654. The bellows support surface 654 is an upper surface of the third step portion 648 and is dimensioned to receive and support the upper sealing surface 420 of the upper horizontal portion 607.

[0152] The modified support chuck 624d is similar to the support chucks 224a-b, except that the stepped seal ring 264 described herein is a contiguous portion of the modified support chuck 624d, in which the chuck seal surface 422 of the stepped seal ring 264 is sized to contact the bottom surface of the second step portion 646 of the modified edge ring 628d.

[0153] When the modified support chuck 614d is raised to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the bellows support surface 654, compressing the bellows 612. As the bellows 612 compresses, the modified cover ring 611d is raised by contacting the outer upper surface 634 of the modified edge ring 628d.

[0154] A fifth alternative embodiment is shown in FIG. 6E. The fifth alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 is the same modified lower shield body 629 as in FIG. 6B. The modified lower shield body 629 includes a compression bellows assembly 650 as described in FIG. 6B and corresponding text, and a bellows stopper 608 attached to the compression bellows assembly 650 as described in FIG. 6A-6B and corresponding text. The fifth alternative embodiment also includes a modified cover ring 611e, a modified edge ring 628e, and a modified support chuck 624e. The modified cover ring 611e, the modified edge ring 628e, and the modified support chuck 624e have similar material compositions as the cover ring 210, the edge ring 228, and the support chuck 224 described herein, but include modified geometries.

[0155] The modified cover ring 611e includes an upper member 614e and a lower member 615e. The upper member 614e is a horizontal member. The lower member 615e is a vertical member. The lower member 615e extends downward from a radially outer tip of the upper member 614e. The lower member 615e is radially disposed between the second cylindrical lower portion 620 and the first cylindrical lower portion 221 of the lower shield body 629. The upper member 614e extends over the entire bellows assembly 650 and at least a portion of the modified edge ring 628e. The upper member 614e has a protrusion 676 that includes a second contact bottom surface 678. The upper member 614e includes a horizontal contact surface 274 disposed on the bottom side of the upper member 614e. The horizontal contact surface 274 contacts at least a portion of the modified edge ring 628e. A protrusion 676 extends downwardly from the horizontal contact surface 274 of the upper member 614e. A second bottom contact surface 678 is at the lower end of the protrusion 676 and is shaped to interact with an outer ledge 680 of the modified edge ring 628e. The second bottom contact surface 678 contacts an outer edge ring surface 682 and a ledge top surface 684 of the outer ledge 680.

[0156] The modified edge ring 628e is disposed on the outer ledge 266 of the modified support chuck 624e. The modified edge ring 628e includes an inner top surface 636, a first step portion 644, and an outer ledge 680. The inner top surface 636 is similar to the inner top surface 636 shown in FIG. 6A. The first step portion 644 is a horizontal surface disposed parallel to and above the outer ledge 266 of the modified support chuck 624e. The outer ledge 680 is a ledge disposed vertically below the first step portion 644. The outer ledge 680 includes a ledge top surface 684 and an outer edge ring surface 682. The outer edge ring surface 682 is an inclined surface connected to the ledge top surface 684 and disposed radially outward of the ledge top surface 684. The ledge top surface 684 is a horizontal surface located radially outward of the first step portion 644. The ledge top surface 684 is located radially outward of and vertically offset from the outer ledge 266 of the modified support chuck 624e. The ledge top surface 684 and the outer edge ring surface 682 are located above the chuck seal surface 422 of the stepped seal ring on the modified support chuck 624e. The modified edge ring 628e includes a ledge lower surface 686. The ledge lower surface 686 is the lower surface of the outer ledge 680. The ledge lower surface 686 is located below the ledge top surface 684 and the outer edge ring surface 682. The ledge lower surface 686 is vertically offset from the chuck seal surface 422, allowing the ledge lower surface 686 to float unimpeded.

[0157] The modified support chuck 624e is similar to the support chucks 224a-b, except that the stepped seal ring 264 described herein is a contiguous portion of the modified support chuck 624e. In the modified support chuck 624e, the chuck seal surface 422 of the stepped seal ring 264 is sized to contact the upper seal surface 420 of the compression bellows assembly 650.

[0158] When the modified support chuck 614e is raised to the processing position, the upper seal surface 420 of the compression bellows assembly 650 contacts the chuck seal surface 422, compressing the bellows 612. As the bellows 612 compresses, it raises the modified cover ring 611e by contacting the first step portion 644 and ledge top surface 684 of the modified edge ring 628e.

[0159] In some embodiments, the modified support chucks 624a-624e may have a cavity formed in the bottom chuck surface 432. The cavity may be a pocket in the modified support chucks 624a-624e and may extend below the outer ledge 266. The upper horizontal portion 607 of the stepped portion 602 of the bellows assembly 650 is considered a process chamber wall. A process chamber wall may be any wall that defines a chamber space within the process assembly 160. In some embodiments, additional process chamber walls include the sputtering target assembly 203, the containment member 208, and the bellows 612.

[0160] Unless otherwise described herein, components not shown in Figures 6A-6E are the same as the components described in Figures 1-5. In some embodiments, some components and corresponding text described in Figures 6A-6E can be combined with the embodiments described in Figures 1-5.

[0161] Figure 7 is a method 700 of transferring a substrate within the transfer space 236 and the chamber space 278 of Figures 2A-2B. The method 700 is enabled by the apparatus described in Figures 2A-2B. In some embodiments, the method 700 can include additional process steps beyond those described herein.

[0162] The first step 702 of the method 700 is to use a robot to place a substrate, such as substrate 200, on a substrate support at a substrate receiving position in a first region. In the first step 702, the substrate support is the substrate support surface 223 of the support chuck 224a. The substrate receiving position is the substrate receiving position of FIG. 2A, where the support chuck 224a and the lift assembly 220a are in a lowered position where the substrate 200 may be loaded thereon. The first region is the transfer chamber assembly 150 and the transfer space 236 formed within the transfer chamber assembly 150. The robot used in the first step 702 is the central transfer device 145. This robot can be any suitable substrate transfer robot. This robot transfers the substrate 200 between the processing assemblies 160. The pressure to which the substrate 200 is exposed during the first step 702 is the transfer space pressure. The transfer space pressure is about 10 -9 Torr ~ approx. 10 -4 Torr, e.g., about 10 -8 Torr ~ approx. 10 -5 Torr, e.g., about 10 -7 Torr ~ approx. 10 -6 Torr.

[0163] The second step 704 of the method 700 is to lift the substrate support and substrate from the first vertical position. The lift assembly 220a allows vertical movement of the substrate support and substrate. The substrate support and substrate are lifted at a speed sufficient to increase the rate of substrate processing while minimizing damage to the substrate. The lift assembly 220a and the support chuck 224a are attached to each other and are lifted at the same speed throughout the entire lifting step.

[0164] A third step 706 of the method 700 is to place the substrate support in a processing position such that the substrate is in the second region and the first and second regions are sealed from each other. In the third step 706, the substrate support and the substrate are raised such that the substrate support and the substrate are in the processing position as shown in FIG. 2B. In the processing position, the bellows assembly 250 is in contact with the support chuck 224a and a seal is formed between the transfer space 236 and the chamber space 278. In this embodiment, the transfer space 236 is the first region and the chamber space 278 is the second region. Providing a seal between the transfer space 236 and the chamber space 278 allows the chamber space 278 to be evacuated to a different pressure than the transfer space 236. Evacuating the chamber space 278 to a different pressure allows different processes to be performed in each processing assembly 160 in the cluster tool assemblies 100a, 100b.

[0165] The fourth step 708 of the method 700 is to perform a substrate manufacturing process. The substrate manufacturing process is one of a PVD process, a CVD process, an ALD process, an etching process, a cleaning process, a heating process, an annealing process, and / or a polishing process. The substrate manufacturing process is performed in the chamber volume 278. In the chamber volume 278 depicted in Figures 2-6, the substrate manufacturing process is a PVD process. The PVD process produces thin films and coatings on the substrate 200. The PVD process can deposit tantalum, copper, aluminum, cobalt, ruthenium, molybdenum, zinc, chromium, gold, palladium, titanium, silicon, or other metals and metal-containing compounds.

[0166] After the processing in the fourth step 708 is performed on the substrate, the chamber volume 278 can be purged and the support chuck 224a is lowered back to the substrate receiving position. The robot removes the support substrate 200 from the support chuck 224a and the method 700 is repeated with a different substrate. In some embodiments, a single processing assembly 160 can process a substrate multiple times during the substrate's life.

[0167] Figure 8 is a method 800 of transferring a substrate 200 within the transfer space 236 and the chamber space 278 of Figures 3A-3B. The method 800 is enabled by the apparatus described in Figures 3A-3B. In some embodiments, the method 800 includes additional process steps beyond those described herein.

[0168] The first step 802 of the method 800 is to move a support chuck, such as support chuck 224b, to a first position on a robot in a first region. In the first step 802, the first position is a loading position above a lift assembly, such as lift assembly 220b. The support chuck 224b is transferred between processing assemblies 160 with a substrate, such as substrate 200, and removed from the lift assembly 220b during the first step 802. The support chuck 224b is positioned above the lift assembly 220b such that the lift assembly 220b is positioned completely below the support chuck 224b. The first region is a transfer space 236 in the transfer chamber assembly 150. The robot that transfers the substrate chuck is a central transfer device 145.

[0169] 3A-3B, the central transport apparatus 145 may be replaced with other suitable substrate and substrate chuck transport apparatuses. A transport apparatus is provided for transporting both substrate chucks and substrates within the first region.

[0170] In a second step 804 of the method 800, a lift assembly is raised to contact a bottom side of the support chuck. The lift assembly is coupled to the bottom side of the support chuck such that the lift assembly and the support chuck are securely connected to one another. The lift assembly passes through a central opening in a robot arm coupled to the support chuck to contact the bottom side of the support chuck. The lift assembly also provides electrical and gas connections to the support chuck. While the lift assembly is being raised to contact the bottom side of the support chuck, the support chuck is still connected to and positioned on the robot.

[0171] During the second step 804, the support chuck is electrically connected to both the lift assembly and the robot, which allows the support chuck to provide constant heating and chucking to the substrate. Constant heating and chucking of the substrate helps maintain a constant temperature of the substrate and minimizes damage to the backside of the substrate caused by sliding of the substrate. While both the lift assembly and the robot provide electrical connections for the power supply of the support chuck, the power supply to the support chuck switches from the robot to the lift assembly during the second step 804.

[0172] In a third step 806 of the method 800, the support chuck and the substrate are lifted from the robot by a lift assembly. During the third step 806, the support chuck is decoupled from the robot. The lift assembly lifts the support chuck and the substrate disposed on the support chuck vertically upward, thereby moving the support chuck and the substrate through the first region toward the second region.

[0173] A fourth step 808 of the method 800 is to position the lift assembly in a second vertical position such that the substrate is in a second region and the first and second regions are sealed from each other. In the fourth step 808, the substrate support and the substrate are raised by the lift assembly such that the substrate support and the substrate are in a processing position as shown in FIG. 3B. In the processing position, the bellows assembly 250 contacts the support chuck 224b and a seal is formed between the transfer space 236 and the chamber space 278. In this embodiment, the transfer space 236 is the first region and the chamber space 278 is the second region. Providing a seal between the transfer space 236 and the chamber space 278 allows the chamber space 278 to be evacuated to a different pressure than the transfer space 236. Evacuating the chamber space 278 to different pressures allows different processes to be performed in each processing assembly 160 in the cluster tool assemblies 100a, 100b.

[0174] The fifth step 810 of the method 800 is to perform a substrate manufacturing process. The substrate manufacturing process is one of a PVD process, a CVD process, an ALD process, an etching process, a cleaning process, a heating process, an annealing process, and / or a polishing process. The substrate manufacturing process is performed in the chamber volume 278. In the chamber volume 278 depicted in Figures 2-6, the substrate manufacturing process is a PVD process. The PVD process produces thin films and coatings on the substrate 200. The PVD process can deposit zinc, chromium, gold, palladium, titanium, copper or other metals and metal-containing compounds.

[0175] After the processing in the fifth step 810 is performed on the substrate 200, the chamber volume 278 can be purged and the support chuck 224a is lowered back to the substrate receiving position. The robot retrieves the support chuck 224a from the lift assembly and the method 800 is repeated with a different substrate. In some embodiments, a single processing assembly 160 can process a substrate multiple times during the substrate's life.

[0176] Elements of methods 700, 800 may be combined. The methods described herein may be performed by the apparatus described in Figures 1-6. It is also envisioned that the methods described herein may be completed using alternative apparatus.

[0177]

[0003] Embodiments disclosed herein are directed to an apparatus for substrate processing and a cluster tool including a transfer chamber assembly and multiple processing assemblies. The present disclosure generally provides a substrate processing tool with improved flexibility of process conditions between processing assemblies within the same cluster tool.

[0178] In the present disclosure, the substrate, and optionally the support chuck, may be transferred between processing assemblies in a transfer space formed by a transfer chamber assembly. The processing assembly includes a processing space in which the substrate is processed. Optionally, the support chuck may be disengaged from the lift assembly while being transferred between processing assemblies. Once the substrate and support chuck are positioned on the lift assembly, the lift assembly raises the substrate and support chuck to an upper processing position. While in the upper processing position, a surface of the processing assembly and a surface of the support chuck are sealed against each other to form a fluidically separated processing space. The processing space is fluidically separated from the transfer space formed by the transfer chamber assembly.

[0179] Isolating the process space from the transfer space by the movement of the lift assembly allows each process space to be adjusted to a different pressure and allows different substrate processing steps to be performed in each process assembly in the transfer chamber assembly. Different process steps can also be performed in each process space if each process step requires different pressures and temperatures. The use of a support chuck as a seal member in the process assembly also minimizes the volume of the process space. Minimizing the process space reduces the amount of process and purge gas required during each process. Sealing between each process space and the transfer space additionally minimizes leakage of process gas into the transfer chamber.

[0180] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of the disclosure being defined by the following claims.

Claims

1. 1. An apparatus configured to simultaneously process multiple substrates, comprising: a transfer chamber assembly having one or more walls defining a transfer space; a support chuck having a substrate support surface; a seal ring having a chuck seal surface, the chuck seal surface being disposed about a periphery of the substrate support surface of the support chuck; a plurality of processing assemblies disposed within the transfer chamber assembly, each of the processing assemblies includes one or more processing chamber walls, the processing chamber walls having an upper sealing surface, and a lift assembly configured to move the support chuck between a transfer position and a processing position; the upper sealing surface forms a separation seal with the chuck sealing surface when the support chuck is in the processing position and forms a sealed processing chamber space between the one or more processing chamber walls and the support chuck that is fluidly separated from the transfer space; the transfer space being in fluid communication with the processing chamber space when the support chuck is in the transfer position; and An apparatus comprising:

2. The apparatus of claim 1 , wherein the transfer chamber assembly further comprises a central transfer apparatus configured to transfer substrates between each of the plurality of processing assemblies in the transfer chamber assembly.

3. The apparatus of claim 1 , wherein the transfer chamber assembly further comprises a central transport device configured to transport the support chuck between each of the plurality of processing assemblies within the transfer chamber assembly.

4. The apparatus of claim 3 , wherein the central transfer apparatus is configured to provide power to the support chuck during transfer between each of the plurality of processing assemblies.

5. 2. The apparatus of claim 1, wherein the upper sealing surface has a channel disposed therein in fluid communication with the chuck seal face, the chuck seal face having one or more grooves and corresponding O-rings disposed in the one or more grooves.

6. The apparatus of claim 1 , wherein the transfer space is in fluid communication with a first vacuum pump and the processing chamber space is in fluid communication with a second vacuum pump.

7. The apparatus of claim 1 further comprising a bellows assembly coupled to the upper sealing surface.

8. 8. The apparatus of claim 7, wherein the bellows assembly is a compression bellows assembly and is configured to compress when the chuck seal face is placed against the upper seal face.

9. 8. The apparatus of claim 7, wherein the bellows assembly is an expanding bellows assembly and is configured to expand when the chuck seal face is placed against the upper seal face.

10. The apparatus of claim 8 , wherein the bellows assembly and the upper sealing surface are part of a chamber seal member, the chamber seal member further comprising a bottom bellows support ring connected to the bellows assembly.

11. 1. An apparatus configured to simultaneously process multiple substrates, comprising: a transfer chamber assembly having one or more walls defining a transfer space; a support chuck having a substrate support surface; a seal ring having a chuck seal surface, the chuck seal surface being disposed about a periphery of the substrate support surface of the support chuck; a plurality of processing assemblies disposed within the transfer chamber assembly, each of the processing assemblies includes one or more processing chamber walls and a lift assembly, the one or more processing chamber walls having an upper sealing surface, the lift assembly configured to move the support chuck between a transfer position and a processing position; the upper sealing surface forms a separation seal with the chuck sealing surface when the support chuck is in the processing position and forms a sealed processing chamber space between the one or more processing chamber walls and the support chuck that is fluidly separated from the transfer space; the transfer space being in fluid communication with the processing chamber space when the support chuck is in the transfer position; and a robotic transfer device disposed within the transfer chamber assembly and configured to transfer substrates between the plurality of processing assemblies within the transfer assembly; An apparatus comprising:

12. The apparatus of claim 11 , wherein the robotic transfer apparatus is further configured to transfer the support chuck between the plurality of processing assemblies within the transfer assembly.

13. The apparatus of claim 12 , wherein the robotic transfer device is configured to provide power to the support chuck during transfer between each of the plurality of processing assemblies.

14. The apparatus of claim 13 , wherein the support chuck is attachable to both the lift assembly and the robotic transfer device.

15. The apparatus of claim 13 , wherein the chuck seal surface and the upper seal surface have an overlapping annular surface area forming the split seal.

16. The apparatus of claim 14 , wherein an edge ring is disposed between the substrate support surface and the chuck seal surface.

17. 17. The apparatus of claim 16, wherein the edge ring includes an annular top surface, and a cover ring having a horizontal contact surface is disposed within the chamber volume, the horizontal contact surface having an annular surface that overlaps the annular top surface.

18. 20. The apparatus of claim 17, wherein the annular upper surface and the horizontal contact surface contact one another when the chuck seal face is placed against the upper seal face.

19. 1. A method for processing a substrate, comprising: placing a substrate and a support chuck at a first location on a robotic transfer device within a transfer space; raising a lift assembly to couple to the support chuck; removing the support chuck from the robot transfer device; raising the support chuck to a second position with the lift assembly; sealing a chuck seal surface against an upper seal surface to form a chamber space, the chamber space being fluidly isolated from the transfer space; processing the substrate in the chamber volume; A method comprising:

20. The method of claim 19 , further comprising evacuating the chamber space to a pressure different than the pressure in the transfer space.

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