Electronic equipment

Abstract

To suppress peeling at an interface between an electrode and an organic layer when a substrate is separated from a semiconductor circuit element and a light-emitting element by a separation layer.SOLUTION: A method of manufacturing a light-emitting device includes a step of forming a separation layer on a first substrate, forming a semiconductor circuit element layer and a first electrode on the separation layer, forming a barrier overlapped with an end part of the first electrode, forming organic layers on the first electrode, the organic layers being arranged in a line so that the organic layers emitting the same color are adjacent to each other, an extension direction of the region being defined as a first direction, forming on the organic layer a second electrode contacted with the barrier by using a material having a good adhesion property with the barrier, and separating a lamination structure including the semiconductor circuit element layer, the first electrode, the barrier, the organic layer and the second electrode from the substrate via the separation layer. In the step, a direction in which the lamination structure is separated from the substrate is a second direction perpendicular to the first direction.SELECTED DRAWING: Figure 16

Description

[Technical field]

[0001] The present invention relates to a light emitting device and a method for manufacturing the same. [Background technology]

[0002] When manufacturing a light-emitting device having a light-emitting element, a semiconductor process is performed on a substrate such as a glass substrate. A semiconductor circuit for driving the light-emitting element is formed using a silicon substrate, and an insulating film (flat A light emitting element is formed on the insulating film.

[0003] In addition, a separation layer is formed on a substrate such as a glass substrate, and a light-emitting element is driven on the separation layer. A semiconductor circuit element is formed, an insulating film (planarization film) is formed on the semiconductor circuit element, and A light emitting element is formed, and a substrate and a semiconductor circuit element are separated by a separation layer. There is a method to fabricate a flexible light-emitting device by transferring optical elements onto a flexible substrate ( (See Patent Document 1).

[0004] In Patent Document 1, an interlayer insulating film is formed on a light-emitting element including an anode, an organic light-emitting layer, and a cathode, The interlayer insulating film and the support are then bonded together with an adhesive layer. The first material layer and the second material layer separate the semiconductor circuit element and the light emitting element from the substrate. The separated semiconductor circuit element and light emitting element are attached to a film substrate by an adhesive layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2003-163337 A Summary of the Invention [Problem to be solved by the invention]

[0006] Here, when the adhesion between the organic layer and the electrode, which is the cathode or anode, formed thereon is weak, In this case, when the semiconductor circuit element and the light emitting element are separated from the substrate by the separation layer, the electrodes and the organic layer There is a risk of peeling off at the interface.

[0007] In one embodiment of the present invention, the semiconductor circuit element and the light emitting element are separated from the substrate by a separation layer. The objective of the present invention is to prevent the electrode and the organic layer from peeling off at the interface when the electrode and the organic layer are bonded to each other. [Means for solving the problem]

[0008] In a light-emitting device having a plurality of pixels, when a light-emitting element is fabricated in each pixel, The electrodes, which are cathodes or anodes, formed on the organic layer, and the regions in contact with the partition wall are called "areas of contact". By providing a barrier that has good adhesion to the electrodes, the semiconductor circuit elements When separating the semiconductor device and the light-emitting element from the substrate, the organic layer and the electrode are not peeled off, and the semiconductor circuit is This makes it possible to separate the light emitting element and the substrate from the light emitting element.

[0009] A separation layer is formed on a first substrate, a semiconductor circuit element layer is formed on the separation layer, On a semiconductor circuit element layer, a plurality of first electrodes are provided which are electrically connected to the semiconductor circuit element layer. A metal layer is formed on the semiconductor circuit element layer so as to overlap the ends of the first electrodes. A partition wall is formed, and an organic layer emitting red light and an organic layer emitting green light are formed on each of the plurality of first electrodes. The red light emitting organic layer or the blue light emitting organic layer is formed. The organic layer, the green-emitting organic layer, and the blue-emitting organic layer each emit the same color. The organic layers that emit red light are arranged adjacent to each other in a row, and the organic layers that emit red light are arranged adjacent to each other in a row. The first region is aligned adjacent to the green light emitting organic layer. a third region in which the blue-emitting organic layers are arranged side by side in a row; In the region, the direction in which the first region, the second region, and the third region extend is called a first direction. The partition wall is disposed between the first region and the second region, and between the second region and the between the first region and a third region, between the third region and the first region, and The partition wall extends in the first direction. A second electrode is formed using a material having good adhesion, and the substrate is connected to the second electrode via the separation layer. From the substrate, the semiconductor circuit element layer, the first electrode, the partition wall, the organic layer, the second In the step of separating the laminated structure including the electrodes, the semiconductor circuit element layer, the front A direction in which a laminated structure including the first electrode, the partition wall, the organic layer, and the second electrode is separated. a second direction perpendicular to the first direction. .

[0010] The partition wall is formed using an inorganic material or an organic material. The inorganic material is an acid. Silicon oxide, silicon nitride, silicon oxide containing nitrogen, silicon nitride containing oxygen, diamond-like carbon, etc. One or more of the organic materials are selected from the group consisting of polyimide, acrylic, and poly Amide, polyimide amide, resist, benzocyclobutene, or siloxane Either one or two or more.

[0011] The second electrode includes an anode having a light-transmitting property, a cathode having a light-transmitting property, and a cathode having a light-shielding property. It is one of the anodes that has light-shielding properties.

[0012] The material of the anode having light transmission properties is indium oxide, an indium oxide-tin oxide alloy, Indium oxide-tin oxide, tungsten oxide and Indium oxide containing zinc oxide, indium oxide zinc oxide alloy, zinc oxide, gallium (Ga)-doped zinc oxide.

[0013] The material of the cathode having light transmission is an extremely thin film of a material having a low work function, or It is a stack of an extremely thin film of a material with a low function and a light-transmitting conductive film.

[0014] The material of the cathode having the light-shielding property is a metal having a small work function, an alloy having a small work function, The present invention relates to an electrically conductive compound having a small thermal conductivity function, and a mixture thereof. Metals with small work functions are lithium (Li), cesium (Cs), magnesium (Mg ), calcium (Ca), strontium (Sr), europium (Eu), ytterbi Yb or Um.

[0015] The material of the anode having the light-shielding property is a metal having a large work function, an alloy having a large work function, The conductive compound has a large electrical conductivity, and the mixture of the conductive compound ... Metals with large charge functions are gold (Au), platinum (Pt), nickel (Ni), and tungsten ( W), Chromium (Cr), Molybdenum (Mo), Iron (Fe), Cobalt (Co), Copper (Cu ), or palladium (Pd). Effect of the Invention

[0016] According to one aspect of the present invention, when a semiconductor circuit element and a light emitting element are separated from a substrate by a separation layer, This provides the effect of suppressing peeling at the interface between the electrode and the organic light-emitting layer.

[0017] This makes it possible to manufacture a highly reliable light-emitting device having a light-emitting element and a semiconductor element. It is Noh. [Brief description of the drawings]

[0018] [Figure 1] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Diagram 2] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Diagram 3] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Figure 4] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Diagram 5] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Figure 6] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Figure 7] 1A is a top view of a sheet-like fibrous body and a cross-sectional view of a structure. [Figure 8] FIG. [Figure 9] Cross-sectional view of the structure. [Figure 10] 1A and 1B are a top view and a cross-sectional view of a mobile phone. [Figure 11] FIG. [Figure 12] FIG. [Figure 13] Top view of the EL panel. [Figure 14] 1A and 1B are a top view and a cross-sectional view of a mobile phone. [Figure 15] FIG. [Figure 16] 1A to 1C are top views illustrating a method for manufacturing a light-emitting device. [Figure 17] 1A to 1C are top views illustrating a method for manufacturing a light-emitting device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] Hereinafter, embodiments of the invention disclosed in this specification will be described with reference to the drawings. However, the invention disclosed herein can be embodied in many different forms, and the present invention Various modifications and changes in form and detail may be made without departing from the spirit and scope of the invention disclosed in the specification. It is easily understood by those skilled in the art that the present invention may be modified in various ways. In the drawings shown below, the same parts or similar functions are The parts having the same functions are given the same reference numerals and the repeated explanations are omitted.

[0020] In the invention disclosed in this specification, a semiconductor device is a device that functions by using a semiconductor. This refers to elements and devices that function in general, including electronic circuits, display devices, light-emitting devices, and other electrical devices and The category includes electronic devices equipped with such electrical devices.

[0021] [Embodiment 1] In this embodiment, a light emitting device and a manufacturing method thereof will be described with reference to FIGS. 2. Figures 3(A) to 3(D), 4(A) to 4(C), 5(A) to 5(B), and 6 Explained using Figs. 6(B), 7(A) to 7(C), 8, 9, 16, and 17. Reveal.

[0022] First, an outline of the present embodiment is shown in FIG. 1(A) to FIG. 1(E). A layer 102 and a semiconductor circuit element 103 are fabricated (see FIG. 1(A)).

[0023] The substrate 101 may be a glass substrate, a quartz substrate, a semiconductor substrate, a ceramic substrate, or a metal substrate. etc. can be used.

[0024] The separation layer 102 is made of tungsten ( W), Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb), Ni, Cobalt (Co), Zirconium (Zr), Zinc (Zn), Ruthenium ( Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (I r), silicon (Si), or an alloy material mainly composed of the above elements, or A layer made of a compound material is formed as a single layer or a laminate. The crystal structure of the layer containing silicon is non- The crystal structure may be crystalline, microcrystalline, or polycrystalline.

[0025] When the separation layer 102 has a single layer structure, it is preferably made of tungsten, molybdenum, or tungsten. mixtures of tungsten and molybdenum, tungsten oxide, tungsten oxynitride, tungsten Molybdenum oxide, molybdenum oxide, molybdenum oxide-nitride, molybdenum oxynitride oxides of tungsten and molybdenum, and mixtures of tungsten and molybdenum The layer is formed of either a nitride of tungsten or a nitride of a mixture of tungsten and molybdenum. The mixture of tungsten and molybdenum is, for example, tungsten and molybdenum. It is equivalent to Den's alloy.

[0026] When the separation layer 102 has a laminated structure, the first layer is preferably made of tungsten, molybdenum, A layer containing tungsten or a mixture of tungsten and molybdenum is formed, and a second layer containing tungsten Oxides of tungsten, oxides of molybdenum, oxides of mixtures of tungsten and molybdenum, tungsten tungsten oxide nitride, molybdenum oxide nitride, or tungsten and molybdenum oxide nitride In this way, when the separation layer 102 has a laminated structure, a layer containing an oxynitride of the mixture is formed. In this case, it is preferable to form a laminate structure of a metal film and a metal oxide film. For example, a method of forming a metal oxide film directly on the substrate 101 by sputtering, The surface of the metal film is oxidized by heat treatment or plasma treatment in an oxygen atmosphere to form a metal oxide film. The method includes a method for forming the same.

[0027] As for the metal film, in addition to the aforementioned tungsten (W) and molybdenum (Mo), titanium ( Ti), Tantalum (Ta), Niobium (Nb), Nickel (Ni), Cobalt (Co), Ruthenium (Zr), Zinc (Zn), Ruthenium (Ru), Rhodium (Rh), Palladium Palladium (Pd), osmium (Os), iridium (Ir) or an element selected from the above elements A film made of an alloy material or a compound material containing an element as a main component can be used.

[0028] Before forming the separation layer 102, a silicon oxide film, a silicon nitride film, and a nitrogen film are formed on the substrate 101. An insulating film such as a silicon oxide film containing oxygen or a silicon nitride film containing oxygen is formed, and a separation layer 1 is formed on the insulating film. 02 may be formed between the substrate 101 and the separation layer 102. By providing the above-mentioned, it is possible to prevent impurities contained in the substrate 101 from penetrating into the upper layers. In addition, when there is a subsequent step of irradiating a laser, the substrate 101 may be It is possible to prevent the silicon oxide containing nitrogen from being etched. In the case of a bare film and a silicon nitride film containing oxygen, the former contains more oxygen than nitrogen, and the latter contains less oxygen than nitrogen. The terms are used interchangeably to mean that the plant contains more nitrogen than the plant itself.

[0029] Next, an electrode electrically connected to the semiconductor circuit element 103 is formed on the semiconductor circuit element 103. A partition wall 105 is formed so as to overlap the end of the electrode 104 (FIG. 1(B) ) The electrode 104 serves as an anode or a cathode of the light-emitting element.

[0030] In the light-emitting device, one or both of the anode and cathode are formed from a conductive film having light-transmitting properties. As an anode or a cathode, a conductive film having light transmitting properties is provided under an organic layer including a light-emitting layer. In addition, when a conductive film having a light-shielding property is formed on the organic layer, the light-emitting device is a bottom emission type. On the other hand, a light-shielding layer that acts as an anode or cathode under an organic layer including a light-emitting layer can be used. In the case where a conductive film having a light-transmitting property is formed on the organic layer, The device is a top-emitting light-emitting device. When both the anode and cathode are formed of a conductive film having light-transmitting properties, In this case, the light emitting device becomes a dual-side emission light emitting device.

[0031] As a material for the anode with translucency, indium oxide (In2O3) and indium oxide- Tin oxide alloy (In2O3-SnO2; Indium Tin Oxide (ITO)) Indium oxide-tin oxide, tungsten oxide and Indium oxide and zinc oxide-containing indium oxide-zinc oxide alloy (In2O3-Zn O: Indium Zinc Oxide (IZO), zinc oxide (ZnO), and more Zinc oxide (ZnO:G) is a material that has been doped with gallium (Ga) to increase its optical transmittance and electrical conductivity. a), etc., can be used.

[0032] These materials may be formed by sputtering, vacuum deposition, sol-gel method, or the like.

[0033] For example, indium oxide-zinc oxide (IZO) is 1 to 20 wt% of indium oxide. It can be formed by sputtering using a target containing 100% zinc oxide. In addition, indium oxide containing tungsten oxide and zinc oxide is The target contains 0.5-5 wt% tungsten oxide and 0.1-1 wt% zinc oxide. The film can be formed by a sputtering method using a dummy electrode.

[0034] When forming a transparent cathode, the electrode should be made of a material with a small work function, such as aluminum. A thin film is used, or a laminate structure of a thin film of such a material and the above-mentioned conductive film having light transmitting properties is used. It can be produced by using the structure.

[0035] In addition, by providing an electron injection layer between the cathode and the electron transport layer described later, the work function Regardless of the size of the indium oxide-oxide containing ITO, silicon or silicon oxide, Various conductive materials having light transmitting properties, such as tin, can be used as the cathode. The material is deposited using a sputtering method, inkjet method, spin coating method, etc. is possible.

[0036] In addition, when a conductive film having a light-shielding property is used as a cathode, a film having a small work function (specifically (3.8 eV or less) Metals, alloys with low work functions, electrically conductive compounds with low work functions, Specific examples of such cathode materials include , elements in group 1 or 2 of the periodic table, i.e. lithium (Li) and cesium Alkali metals such as (Cs), magnesium (Mg), calcium (Ca), and strontium (Sr). Alkaline earth metals such as strontium (Sr) and alloys containing these (MgAg, AlLi ), europium (Eu), ytterbium (Yb), and other rare earth metals, including Examples of the material include alloys.

[0037] In addition, when a conductive film having a light-shielding property is used as an anode, a conductive film having a large work function (specifically (4.0 eV or more for metals, alloys with large work functions, conductive compounds with large work functions, and It is preferable to use a mixture of these.

[0038] For example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), Molybdenum (Mo), Iron (Fe), Cobalt (Co), Copper (Cu), Palladium (Pb) Examples of the nitride include titanium (Pd), and nitrides of metal materials (for example, titanium nitride).

[0039] The partition wall 105 is formed to separate the organic layer 112 for each pixel, and is made of an inorganic insulating material or An organic insulating material can be used.

[0040] In addition, the partition wall 105 must have good adhesion to the electrode 106 that will be formed in a later step. The partition wall 105 may have a laminated structure.

[0041] Examples of inorganic materials include silicon oxide, silicon nitride, silicon oxide containing nitrogen, and nitride containing oxygen. Silicon, Diamond Like Carbon (DLC) A laminated structure of one or more of these can be used. Polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclohexyl It is sufficient to use one of robutene, siloxane, or a laminate structure of two or more. stomach.

[0042] Siloxane is a compound whose skeletal structure is composed of silicon (Si) and oxygen (O) bonds, and its substituents are Contains at least hydrogen, or has fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. The starting material is a polymer material having at least one of the following substituents: A fluoro group may be used as the substituent, and an organic group containing at least hydrogen and and a fluoro group may also be used.

[0043] Next, an organic layer 112 is formed on the electrode 104 in a region between adjacent partition walls 105. Then, an electrode 106 is formed on the organic layer 112 in contact with the partition wall 105, and then a partition wall 106 is formed on the organic layer 112 in contact with the partition wall 105. A sealing layer 107 is formed to cover the wall 105 and the electrode 106, and a protective material is further formed on the sealing layer 107. A support 109 is formed on the protective material 108 (see FIG. 1(C)). When electrode 104 is an anode, electrode 106 is a cathode, and when electrode 104 is a cathode, electrode 106 is an anode. It is.

[0044] In this embodiment, the electrodes 106 are formed using an aluminum film, and the partition walls 105 are formed using a polyimide film. Since the adhesion between polyimide and aluminum is good, There is no risk of peeling off.

[0045] The organic layer 112 necessarily includes a light-emitting layer, and may also include a hole injection layer, a hole transport layer, an electrode layer, and a hole transport layer. At least one of a electron transport layer and an electron injection layer may be included. A method such as a liquid crystal display (LCD) method, ...

[0046] The materials constituting the hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are described below. This will be explained in detail.

[0047] The hole injection layer is provided in contact with an anode, which is one of the electrodes 104 and 106, and This layer contains a material with high injection properties. Molybdenum oxide, vanadium oxide, ruthenium oxide, etc. Examples of materials that can be used include phthalocyanine oxide, tungsten oxide, and manganese oxide. Phthalocyanine compounds such as phthalocyanine (abbreviation: HPc) and copper phthalocyanine (CuPc) 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl Phenyl (abbreviation: DPAB), N,N'-bis[4-[bis(3-methylphenyl)amine N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamino Aromatic amine compounds such as poly(ethylenedioxythiophene) (abbreviation: DNTPD) or poly(ethylenedioxythiophene) Positive polarity can also be achieved by using polymers such as poly(ethylenediaminetetraacetate) / poly(styrenesulfonate) (PEDOT / PSS). A hole injection layer can be formed.

[0048] In addition, a compound material in which a substance having a high hole transporting property and an acceptor substance are contained in the hole injecting layer can be used. A material having a high hole transporting property may be used. By using a material that has been subjected to the above-mentioned process, it is possible to select a material for forming the electrode regardless of the work function of the electrode. In other words, it is possible to use not only materials with a large work function as the anode, but also materials with a small work function. The acceptor substance can be 7,7,8,8-tetracyano- 2,3,5,6-Tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, etc. In addition, transition metal oxides can be mentioned. Examples of the oxides include oxides of metals belonging to Groups 4 to 8 of the oxides of the metals ... Vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide Among them, rhenium oxide, manganese oxide, and rhenium oxide are preferred because of their high electron-accepting properties. Ribidene is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle.

[0049] As a substance having a high hole transporting property used in the composite material, an aromatic amine compound, carbazole, Derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.) Various compounds can be used. It is preferable that the organic compound has a high hole transporting property. -6 cm 2 / Vs or later However, it is preferable that the material has a higher hole mobility than that of the material having a higher hole transporting property ... electron transporting property. Other materials may be used as long as they are suitable for the composite material. Specific examples of organic compounds that can be used are listed below.

[0050] For example, the aromatic amine compound is N,N'-di(p-tolyl)-N,N'-diphenyl Phenyl-p-phenylenediamine (DTDPPA), 4,4'-bis[N-(4- Diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N ,N'-Bis[4-[bis(3-methylphenyl)amino]phenyl]-N,N'-diphenyl 1,3-Diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: DNTPD) ,5-Tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B) and the like.

[0051] Specific examples of carbazole derivatives that can be used in composite materials include 3-[N- (9-Phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazol 3,6-bis[N-(9-phenylcarbazole-3 -yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2) , 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino] -9-phenylcarbazole (abbreviation: PCzPCN1), etc.

[0052] Other carbazole derivatives that can be used in composite materials include 4,4'- Di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N- Carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl- 9-Anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[ 4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. There can be.

[0053] In addition, examples of aromatic hydrocarbons that can be used in the composite material include 2-tert -Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2- tert-Butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3, 5-Diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9 ,10-Bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,1 0-Di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene 2-tert-butylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAn th), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA) , 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7- Tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl 9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,1 0'-Diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl) 10,10'-bis[(2,3,4,5,6-pentafluorophenyl) phenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. In addition, pentacene, coronene, etc. can also be used. -6 cm 2 / Vs or more and uses aromatic hydrocarbons with carbon numbers of 14 to 42. It is more preferable that

[0054] The aromatic hydrocarbon that can be used in the composite material may have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2- Diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2- diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), and the like.

[0055] In addition, poly(N-vinylcarbazole) (abbreviation: PVK) and poly(4-vinyltriphenylphosphine) nylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl Amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis Polymer compounds such as Poly(phenyl)benzidine (abbreviation: Poly-TPD) can also be used. can.

[0056] The hole transport layer is a layer containing a substance having a high hole transporting property. , for example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl ( Abbreviation: NPB (or α-NPD) or N,N'-bis(3-methylphenyl)-N,N '-Diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4 ,4',4''-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TD ATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamine N-(spiro-9, 9'-Bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB) The aromatic amine compounds mentioned here are mainly 10 -6 cm 2 / Vs or higher. However, it has a higher hole transporting property than electron transporting property. Other substances may be used as long as they have a high hole transporting property. The layer may be not only a single layer, but also a laminate of two or more layers made of the above-mentioned materials. .

[0057] In addition, poly(N-vinylcarbazole) (abbreviation: PVK) and poly( Polymer compounds such as 4-vinyltriphenylamine (PVTPA) can also be used. can.

[0058] The light-emitting layer is a layer containing a light-emitting substance. There are two types of light-emitting layer: Even in the case of a so-called single-film light-emitting layer in which the light-emitting center material is dispersed in the host material, The light-emitting layer may be of any host-guest type.

[0059] There is no limitation on the luminescence center material to be used, and any known fluorescent or phosphorescent material may be used. As a fluorescent material, for example, N,N'-bis[4-(9H-carbazolyl) N,N'-diphenylstilbene-4,4'-diamine (abbreviation Name: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl- 9-Anthryl)triphenylamine (abbreviation: YGAPA), etc., and nm or more 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2 -Anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N -[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-a PCAPA, Perylene, 2,5,8,11-Tetra-tert-butylperylene Rylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl Nyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), ,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: D PABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthracene phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N-[4 -(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl N,N,N',N',N'-1,4-phenylenediamine (abbreviation: 2DPAPPA) ',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7 ,10,15-Tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-difluorophenyl) (phenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation Name: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2- Anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCA BPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl phenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis( 1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl -1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1' -biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]- N-Phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-Tri Phenylanthracene-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N, N'-Diphenylquinacridone, (abbreviation: DPQd), rubrene, 5,12-bis(1, 1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2 -(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-py 2-{2-methyl-6-phenylpropanedinitrile (abbreviation: DCM1), [2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizine-9- 4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2 ), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-di Amine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetraphenyl Kis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diazo amine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7, 7-Tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolin 4H-pyran-4-ylidene)propanedinitrile (abbreviation) 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethylphenyl) Chil-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizine-9-yl 4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB ), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H- Pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bi S[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydrofuran 1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4 -ylidene}propanedinitrile (abbreviation: BisDCJTM). Examples of the photosensitive material include bis[2-(4',6'-difluorophenyl)pyridinate] -N,C 2’ ]Iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: F Ir6), and bis[2-(4', 6'-Difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) picolinar (abbreviation: FIrpic), bis[2-(3',5'-bistrifluoromethylphenyl ) Pyridinato-N,C 2’ ]Iridium(III) picolinate (abbreviation: Ir(CF3p py)2(pic)), bis[2-(4',6'-difluorophenyl)pyridinato-N ,C 2’ ]Iridium(III) acetylacetonate (abbreviation: FIracac), luminescence Tris(2-phenylpyridinato)iridium (I II) (abbreviation: Ir(ppy)3), bis(2-phenylpyridinato)iridium(II I) acetylacetonate (abbreviation: Ir(ppy)2(acac)), tris(acetyl Acetonato)(monophenanthroline)terbium(III) (abbreviation: Tb(acac) 3(Phen)), Bis(benzo[h]quinolinato)iridium(III) acetylacetonate Tonat (abbreviation: Ir(bzq)2(acac)), bis(2,4-diphenyl-1,3 -Oxazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir (dpo)2(acac)), bis[2-(4'-perfluorophenylphenyl)pyridine Dinato]iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2 (acac)), bis(2-phenylbenzothiazolato-N,C 2’ ) Iridium (II I) Acetylacetonate (abbreviation: Ir(bt)2(acac)), bis[2-(2'- Benzo[4,5-α]thienyl)pyridinato-N,C 3’ ]Iridium(III) acetyl Ir(btp)2(acac) Rinat - N,C 2’) Iridium(III) acetylacetonate (abbreviation: Ir(piq )2(acac)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl Ir(Fdpq)2(acac) , (acetylacetonato)bis(2,3,5-triphenylpyrazinate)iridium(I II) (abbreviation: Ir(tppr)2(acac)), 2,3,7,8,12,13,17 ,18-Octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP ), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline )Europium(III) (abbreviation: Eu(DBM)3(Phen)), tris[1-(2 -Thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europ Pium(III) (abbreviation: Eu(TTA)3(Phen)) and others. The material can be selected from among other known materials, taking into consideration the emission color of each light-emitting element. That's good.

[0060] When a host material is used, for example, tris(8-quinolinolato)aluminum(III ) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium ( II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenyl) (Enolato)aluminum(III)(abbreviation: BAlq), bis(8-quinolinolato)zinc (II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc ( II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc ( II) (abbreviation: ZnBTZ) and other metal complexes, ert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3- Bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl] 3-(4-biphenylyl)-4-phenyl-5-( 4-tert-Butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2 ',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzoyl) Midazole (abbreviation: TPBI), Bathophenanthroline (abbreviation: BPhen), BCP (abbreviation: BCP), 9-[4-(5-phenyl-1,3,4-oxadiazo Heterocyclic compounds such as [(2-yl)phenyl]-9H-carbazole (abbreviation: CO11) Examples of aromatic amine compounds include NPB (or α-NPD), TPD, and BSPB. In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, and chrysene derivatives , dibenzo[g,p]chrysene derivatives and other condensed polycyclic aromatic compounds. , 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9 -[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-a amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine DPhPA, 4-(9H-carbazol-9-yl)-4'-(10-fluorouracil) N,9-diphenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole 3-Amine (abbreviation: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl 9H-carbazol-3-amine (abbreviation) :PCAPBA), N,9-diphenyl-N-(9,10-diphenyl-2-anthryl )-9H-Carbazole-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy- 5,11-Diphenylchrysene, N,N,N',N',N'',N'',N''',N' ''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (Abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H -Carbazole (abbreviation: CzPA), 3,6-diphenyl-9-[4-(10-phenyl -9-Anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 9,10 -Bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di (2-Naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di (2-Naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-bianthryl (abbreviation BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation :DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 3,3',3''-(benzene-1,3,5-triyl)tripylene (abbreviation Among these and other known substances, The energy gap of the luminescent center is larger than the triplet energy in the case of phosphorescence. The material has a sufficient energy gap (triplet energy) and each layer has It is sufficient to select a substance that exhibits transport properties that match the transport properties required.

[0061] The electron transport layer is a layer containing a substance with high electron transport properties. For example, tris(8-quinolinol) Tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum Almq3, bis(10-hydroxybenzo[h]quinolinato)beryllium BeBq2, Bis(2-methyl-8-quinolinolato)(4-phenylphenyl) Al(BAlq), etc., quinoline or benzoquinoline skeletons The layer is made of a metal complex having bis[2-(2-hydroxyphenyl Zn(BOX)2, bis[2-(2-hydroxybenzoxazolato]zinc (abbreviation: Zn(BOX)2) Oxazole-based compounds such as [diphenyl]benzothiazolato]zinc (abbreviation: Zn(BTZ)2) Metal complexes having thiazole-based ligands can also be used. In addition, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3, 4-Oxadiazole (abbreviation: PBD) and 1,3-bis[5-(p-tert-butyl phenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7) , 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)- 1,2,4-triazole (abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen ), bathocuproine (abbreviation: BCP), etc. can also be used. , mainly 10 -6 cm 2 / Vs or more. Any substance other than the above may be used for the electron transport layer as long as it has a high electron transporting property.

[0062] The electron transport layer may be a single layer or a laminate of two or more layers of the above-mentioned materials. It may also be possible to use the

[0063] In addition, a layer for controlling the movement of electron carriers may be provided between the electron transport layer and the light emitting layer. This is achieved by adding a small amount of a substance with high electron trapping properties to a material with high electron transport properties as described above. A layer that adjusts the carrier balance by suppressing the movement of electron carriers. This type of structure prevents light from being emitted by electrons penetrating the light-emitting layer. This is highly effective in suppressing problems that arise (such as a decrease in element life).

[0064] In addition, an electron injection layer is provided in contact with the cathode, which is the other of the electrodes 104 and 106. Examples include lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (C aF2) or alkaline earth metals or their compounds. For example, an alkali metal or an aluminum oxide may be added to the layer made of a substance having an electron transporting property. Potassium earth metals or their compounds are included, e.g., magnesium ( In addition, the electron injection layer may contain an electron transporting material such as The layer made of a material having the above structure contains an alkali metal or an alkaline earth metal. This is more preferable because it allows efficient injection of electrons from the cathode.

[0065] In addition, when red (R), green (G), and blue (B) light emission is obtained by the organic layer 112, the organic The thickness of the layer 112 may be changed according to the wavelength of each of the R, G, and B lights. When either the electrode 104 or the electrode 106 is formed of a conductive film having reflectivity, the light emitting layer is The first light is emitted through the other of the light emitting layer 104 or the electrode 106, and the second light is emitted through the light emitting layer 104 and the electrode 106. 104 or electrode 106, and then the other electrode 104 or electrode 106. There is a second light that goes out through the red (R), green (G), and blue (B) lights. Since the wavelengths of the first and second lights are different, the optimal distance at which the first light and the second light interfere with each other and reinforce each other is set by the organic layer 11. This can be achieved by changing the film thickness of 2 according to each color.

[0066] The sealing layer 107 is a passivation film, for example, a silicon nitride film or an aluminum oxide film. A single layer of moisture-proof inorganic film such as silicon oxide film containing nitrogen, or a laminate of these films is formed by sputtering, etc. Alternatively, it may be formed as a laminated structure of a moisture-proof inorganic film and an organic film. Such an organic film needs to be flat and have stress relaxation properties. For example, polylactic acid is deposited by vapor deposition. It is sufficient to form the ferroelectric material by combining the ferroelectric material and the ferroelectric material.

[0067] The protective material 108 is made of epoxy resin, acrylic resin, or a sheet-like fiber material as described later. A structure (prepreg) in which fibers are impregnated with organic resin may be used.

[0068] The support 109 may be a peelable film or resin material, for example, a material that peels off when irradiated with UV light. A UV peelable film or the like can be used to remove the adhesive.

[0069] Next, the semiconductor circuit element 103, the electrode 104, and the like are removed from the substrate 101 through the separation layer 102. A laminated structure including a partition wall 105, an organic layer 112, an electrode 106, and a sealing layer 107, a protective material 108 Then, the support 109 is separated (see FIG. 1(D)).

[0070] The separated semiconductor circuit element 103, the electrode 104, the partition wall 105, the organic layer 112, and the electrode 10 6. The laminated structure including the sealing layer 107 and the protective material 108 are bonded to the base 111. (See FIG. 1(E)). The substrate 111 is attached to the semiconductor circuit element 103 with an adhesive. In addition, the support 109 may be separated from the protective material 108 after being attached to the base body 111. Just do that.

[0071] The base 111 may be a flexible substrate, for example, polyethylene terephthalate. Polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyamide Acrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate Polyethersulfone resin (PC), polyethersulfone resin (PES), polyamide resin, cycloolefin resin Fin resin, polystyrene resin, polyamide-imide resin, polyvinyl chloride resin, etc. are preferred. In particular, it is possible to suppress the elongation of the substrate at high temperatures and prevent the substrate from deforming or cracking. It is preferable to use a material with a low thermal expansion coefficient for the base 111 because this can suppress the damage caused by the heat. It is nice.

[0072] The substrate 111 is a structure 3 in which a sheet-like fibrous body 302 is impregnated with an organic resin 301. 05 may be used (see FIG. 7(C)). Such a structure 305 is also called a prepreg. Specifically, prepreg is a material made by diluting a matrix resin with an organic solvent onto a sheet-like fibrous body. After impregnating the material with the composition, the material is dried to volatilize the organic solvent and semi-cure the matrix resin. This is what we have done.

[0073] The sheet-like fibrous body 302 is a woven fabric made by weaving yarn bundles as warp and weft yarns, as shown in FIG. 7(B) and 7(C). The sheet-like fibrous body 302 is impregnated with an organic resin 301. A cross-sectional view of structure 305 is shown in FIG.

[0074] The sheet-like fibrous body 302 is a woven or nonwoven fabric made of an organic or inorganic compound. The sheet-like fibrous body 302 may be made of high-strength fibers of organic or inorganic compounds. stomach.

[0075] The sheet-like fibrous body 302 is made of bundles of fibers (single yarns) (hereinafter referred to as yarn bundles) as warp yarns and Fabric made by weaving using weft yarns or by piling multiple types of fiber bundles randomly or in one direction. In the case of woven fabric, plain weave, twill weave, satin weave, etc. may be used as appropriate. This can be done.

[0076] The cross section of the yarn bundle may be circular or elliptical. The yarn bundle is processed by opening it using high-frequency vibration, continuous ultrasonic vibration, and pressure from a roll. The width of the yarn bundle that has been subjected to the open fiber processing is wider, and the number of single yarns in the thickness direction can be reduced. It is possible to use low twist yarns as the yarn bundle, and the cross section of the yarn bundle is elliptical or flat. As a result, the yarn bundle is easily flattened, and the cross-sectional shape of the yarn bundle becomes elliptical or flat. In this way, by using a yarn bundle having an elliptical or flat cross section, the sheet-like fiber body 302 Therefore, the thickness of the structure 305 can be reduced. As a result, a thin semiconductor device can be manufactured.

[0077] As shown in FIG. 7(A), the sheet-like fibrous body 302 is made up of warp threads 302a and In such a fibrous body, warp threads 302a and weft threads 302b are woven at regular intervals. and an area where the weft yarn 302b does not exist (referred to as a basket hole 302c). In such a sheet-like fibrous body 302, the ratio of the organic resin 301 impregnated into the fibrous body is increased, The adhesion of the basket-like fibrous body 302 can be improved. In the hole 302c, there are no warp threads 302a and weft threads 302b, but the organic resin 301 It is filled.

[0078] As shown in FIG. 7B, the sheet-like fibrous body 302 is made of warp yarns 302a and weft yarns 302b. The density of the basket holes 302b may be high and the ratio of the basket holes 302c may be low. It is preferable that the size of the basket hole 302c is smaller than the area to be locally pressed. Typically, it is preferable that each side is a rectangle having a length of 0.01 mm or more and 0.2 mm or less. When the area of ​​the basket hole 302c of the wire-like fibrous body 302 is so small, the fine tip Even if pressed by a small object (typically a writing implement such as a pen or pencil), the sheet absorbs the pressure. It is possible for the entire fibrous body 302 to be absorbed.

[0079] In addition, in order to increase the penetration rate of the organic resin 301 into the inside of the yarn bundle, the yarn bundle is subjected to a surface treatment. For example, corona discharge treatment or plasma discharge treatment to activate the surface of the yarn bundle is also possible. In addition, there are surface treatments using silane coupling agents and titanate coupling agents. .

[0080] High strength fibers are specifically fibers with high tensile modulus. Representative examples of high strength fibers are polyvinyl alcohol fibers, polyester fibers, etc. Fibers made of styrene, polyamide, polyethylene, aramid, polyparaphenylene The fibers are benzobisoxazole fibers, glass fibers, or carbon fibers. Glass fibers made of E glass, S glass, D glass, Q glass, etc. can be used. The sheet-like fibrous body 302 may be formed of one type of high-strength fiber. , and may be formed from a plurality of types of the high strength fibers.

[0081] The organic resin 301 impregnated in the sheet-like fibrous body 302 is an epoxy resin, an unsaturated polyester resin, or the like. resin, polyimide resin, bismaleimide triazine resin, cyanate resin, etc. Thermosetting resins can be used. Polyphenylene oxide resins, polyether Thermoplastic resins such as imide resins and fluororesins can be used. A combination of the above organic resin and the above thermosetting resin may be used. The sheet-like fibrous body can be fixed to the semiconductor element layer by the treatment. The higher the glass transition temperature of 301, the less likely it is to be broken by localized pressure, which is preferable.

[0082] A highly thermally conductive filler may be dispersed in the organic resin 301 or the fiber bundle. The conductive filler includes aluminum nitride, boron nitride, silicon nitride, alumina, and the like. Moreover, the highly thermally conductive filler may be metal particles such as silver or copper. By being contained in the organic resin or the yarn bundle, it becomes easier to dissipate heat generated in the element layer to the outside. Therefore, it is possible to suppress heat accumulation in the semiconductor device, and damage to the semiconductor device can be reduced. can.

[0083] In addition, in Fig. 7(A) and Fig. 7(B), one warp thread and one weft thread are woven. Although a sheet-like fiber body is shown, the number of warp threads and weft threads is not limited to this. The number of threads and wefts may be determined as necessary. For example, Figure 8 shows a top view of a sheet-like fibrous body formed by weaving bundles of 10 fibers together. A cross-sectional view is shown in Fig. 9. In Fig. 9, the sheet-shaped fibrous body 302 is contained in the organic resin 301. immersed therein to form structure 305.

[0084] As described above, since the contact area between the electrode 106 and the partition wall 105 is large, the electrode 10 This can prevent the layer 6 and the organic layer 112 from being separated.

[0085] Next, a thin film transistor (Thin Film Transistor) was formed as the semiconductor circuit element 103. The light-emitting device in which the ansistor (TFT) is formed and the method for manufacturing the same are shown in FIG. 2 and FIG. 3 (A ) to Fig. 3(D), Fig. 4(A) to Fig. 4(C), Fig. 5(A) to Fig. 5(B), Fig. 6(A) to Fig. 6 This will be explained using FIG. 7B, FIG. 7A to FIG. 7C, FIG. 8, and FIG.

[0086] First, a separation layer 222 and a base film 204 are formed on a substrate 221 (see FIG. 3(A)). The substrate 221 may be made of the same material as the substrate 101 .

[0087] The undercoat film 204 may be a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, or a nitrogen film containing oxygen. The film may be any one of silicon carbide films or a laminated film of two or more of them.

[0088] The separation layer 222 may be made of a material similar to that of the separation layer 102 .

[0089] Before forming the separation layer 222, a silicon oxide film, a silicon nitride film, and a nitrogen film are formed on the substrate 221. An insulating film such as a silicon oxide film containing oxygen or a silicon nitride film containing oxygen is formed, and a separation layer 2 is formed on the insulating film. 22 may be formed between the substrate 221 and the separation layer 222. By providing the above, it is possible to prevent impurities contained in the substrate 221 from penetrating into the upper layer. In addition, when there is a subsequent step of irradiating a laser, the substrate 221 can be In this case, the oxide containing nitrogen can be prevented from being etched. In the case of a silicon film and a silicon nitride film containing oxygen, the former contains more oxygen than nitrogen, and the latter contains less oxygen. The terms are used interchangeably to mean that it contains more nitrogen than

[0090] Next, an island-shaped semiconductor film 225 is formed on the base film 204. A gate insulating film 205 is disposed on the island-shaped semiconductor film 225. Then, a contact electrode 236 is formed (see FIG. 3(B)).

[0091] The island-shaped semiconductor film 225 is formed of a material such as silicon (Si) or germanium (Ge). Amorphous semiconductors are produced by vapor deposition or sputtering using a gas containing the semiconductor material. (Amorphous) semiconductors, the amorphous semiconductors are crystallized using light energy or thermal energy. Polycrystalline semiconductors or microcrystalline (semi-amorphous or microcrystalline) Semiconductors that are mainly composed of organic materials, etc. can be used. The semiconductor film 225 is formed by sputtering, LPCVD, plasma CVD, or the like. After the film is formed, it may be etched to form an island shape. In this embodiment, the island-shaped semiconductor film 22 As 5, an island-shaped silicon film is formed.

[0092] The island-shaped semiconductor film 225 may be made of silicon (Si), germanium (Ge), or the like. In addition to the elements, compounds such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also used. Compound semiconductors can also be used. SnO2, magnesium zinc oxide, gallium oxide, indium oxide, and the above oxides For example, an oxide semiconductor composed of a plurality of oxide semiconductors can be used. An oxide semiconductor composed of zinc, indium oxide, and gallium oxide may also be used. When zinc oxide is used for the island-shaped semiconductor film 225, For the gate electrode 23, Y2O3, Al2O3, TiO2, or a laminate of these materials may be used. 6. ITO, Au, Ti, etc. are used for the electrodes 215a and 215b described later. In, Ga, etc. can also be added to ZnO.

[0093] The gate electrode 236 is formed by depositing Ag, Au, C, etc., using a CVD method, a sputtering method, a droplet discharge method, etc. u, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, An element selected from Si, Ge, Zr, Ba, or an alloy material whose main component is an element It may be made of a compound material. It may also be made of polycrystalline silicon doped with impurity elements such as phosphorus. Alternatively, a semiconductor film such as a silicon film or an AgPdCu alloy may be used. A structure in which several layers are laminated may also be used.

[0094] In addition, in the island-like semiconductor film 225, a channel forming region 233, a source region or a drain region A region 234a is one of the source and drain regions, and a region 234b is the other of the source and drain regions. (see FIG. 3C). The region 234a and the region 234b are formed in the island-shaped semiconductor film 225. By doping an impurity element having one conductivity type into the gate electrode 236 as a mask, The impurity element having one conductivity type is an impurity element that imparts n-type conductivity. For example, phosphorus (P) or arsenic (As) can be used, and boron can be used as an impurity element to give the p-type. (B) should be used.

[0095] In addition, the channel formation region 233 and the region 234a, A low concentration impurity region may be formed between the region 234a and the region 234b.

[0096] Next, the insulating film 206 and the insulating film 207 are formed on the gate insulating film 205 and the gate electrode 236 . Further, an electrode 21 electrically connected to the region 234a is formed on the insulating film 207. 5a, and an electrode 215b electrically connected to the region 234b is formed. In this manner, the TFT 211 included in the semiconductor circuit is fabricated (see FIG. 3(D)).

[0097] The insulating film 206 and the insulating film 207 are each made of one of the materials listed in the description of the base film 204. In this embodiment, the insulating film 206 is formed using a nitride film containing oxygen. A silicon film is formed, and a silicon oxide film containing nitrogen is formed as the insulating film 207. Therefore, the dangling of the island-like semiconductor film 225 is caused by hydrogen contained in the silicon nitride film containing oxygen. The insulating film 206 and the insulating film 207 are not necessarily formed. Either one may be formed as required.

[0098] The electrodes 215a and 215b are made of any of the materials described in the description of the gate electrode 236. Either of these may be used.

[0099] Next, the insulating film 208 is formed to cover the insulating film 207, the electrode 215a, and the electrode 215b. An electrode 215a or 215b is electrically connected to the insulating film 208. 17 (see FIG. 4(A)).

[0100] The insulating film 208 may be formed using an organic insulating material or an inorganic insulating material.

[0101] Inorganic materials include, for example, silicon oxide, silicon nitride, silicon oxide containing nitrogen, diamond-like Carbon (Diamond Like Carbon (DLC)) or In addition, a laminated structure of two or more layers can be used. aryl, polyamide, polyimideamide, resist or benzocyclobutene, siloxane Any one of these may be used, or a laminated structure of two or more of these may be used.

[0102] The electrode 217 may be formed using any of the materials listed in the description of the gate electrode 236. That's good.

[0103] Next, a partition 275 is formed over the insulating film 208 (see FIG. 4B). The partition wall 275 may be formed using any of the materials described above for the insulating film 208. The electrodes 217 and the organic layer 11 to be formed later overlap each other. 2 on a pixel-by-pixel basis.

[0104] Next, the organic layer 112 is formed on the electrode 217 in the area surrounded by the adjacent partition walls 275. (See Figure 4(C)).

[0105] Next, the electrode 113 is formed on the organic layer 112 and the partition wall 275. It may be formed using any of the materials mentioned for pole 106 .

[0106] The sealing layer 114 is formed over the electrode 113 (see FIG. 5A). It may be formed of the same material as 107 .

[0107] In addition, a protective material 241 is formed on the sealing layer 114. The protective material 241 is the same as the protective material 108. The material should be used.

[0108] Furthermore, a support 242 is formed on the protective material 241 (see FIG. 5(B)). The same material as that of the support 109 may be used.

[0109] Next, through the separation layer 222, the base film 204, the TFT 211, the insulating film 208, electrode 217, partition wall 275, organic layer 112, electrode 113, sealing layer 114, protective material 241 and the support 242 are separated (see FIG. 6(A)).

[0110] At this time, a laser beam, for example, a UV laser beam, is irradiated to the separation layer 222 and the underlayer. An opening may be formed in the membrane 204 .

[0111] By forming the opening, a part of the separation layer 222 is removed, which triggers From the substrate 221, the undercoat film 204, the TFT 211, the insulating film 208, the electrode 217, the partition wall 275 , the organic layer 112, the electrode 113, the sealing layer 114, the protective material 241, and the support 242, This separation can be achieved by separating the layers 222 from each other. This is performed with the base film 204 as the boundary.

[0112] The laser irradiation may be performed before the support 242 is formed.

[0113] The type of laser beam is not limited to UV laser beam, and can be used to form an aperture. There are no particular restrictions as long as it is possible.

[0114] A laser oscillator that emits a laser beam consists of a laser medium, an excitation source, and a resonator. Lasers can be classified according to the medium into gas lasers, liquid lasers, and solid-state lasers. Lasers can be classified according to their oscillation characteristics into free electron lasers, semiconductor lasers, and X-ray lasers. In this embodiment, any type of laser may be used. Preferably, a gas laser or A solid-state laser is preferably used, and more preferably a solid-state laser is used.

[0115] Gas lasers include helium-neon lasers, carbon dioxide lasers, excimer lasers, and argon-ion lasers. There are two types of excimer lasers: rare gas excimer laser and rare gas halide excimer laser. There are three types of rare gas excimer lasers: argon, krypton, and xenon. The argon ion laser is a rare gas ion laser, and the metal vapor ion laser is a There is a laser.

[0116] Liquid lasers are classified into inorganic liquid lasers, organic chelate lasers, and dye lasers. The organic chelate laser and the organic chelate laser are based on rare earth ions such as neodymium, which are used in solid-state lasers. is used as the laser medium.

[0117] The laser medium used in solid-state lasers is a solid body doped with active species that perform laser action. The solid body is a crystal or glass. The crystal is YAG (YAG). YLF, YVO4, YAlO3, Sapphire , ruby, and alexandrite. Also, the active species that have laser action are, for example, 3 ion (Cr 3+ , Nd3+ , Yb 3+ , Tm 3+ , Ho 3+ , Er 3+ , Ti 3+ ).

[0118] Furthermore, if ceramic (polycrystalline) is used as the medium, it is possible to produce any shape in a short time and at low cost. When a single crystal is used as the medium, it is usually a few mm in diameter. A cylindrical object several tens of millimeters in length is used, and ceramic (polycrystalline) is used as the medium. It is possible to make even larger ones when using a medium that directly contributes to light emission. The concentration of dopants such as Nd and Yb in the crystals cannot be changed significantly in either single crystals or polycrystals. Therefore, there is a certain limit to how much the laser output can be improved by increasing the concentration. However, when ceramic is used as the medium, the size of the medium can be significantly increased compared to single crystals. This allows the use of ceramics as a medium, resulting in a significant increase in output. By using this, it is possible to easily form a medium having a parallelepiped or rectangular parallelepiped shape. If a medium with such a shape is used and the oscillation light is made to travel in a zigzag pattern inside the medium, the oscillation light path will be This allows for a large amplification and allows for high output oscillation. In addition, the cross-sectional shape of the laser beam emitted from the medium of this shape is four-dimensional. The angular shape is advantageous for shaping into a linear beam compared to a round beam. The laser beam thus emitted is shaped using an optical system to It is possible to easily obtain a linear beam with a length of 1 mm or less and a long side length of several mm to several meters. In addition, by irradiating the medium with excitation light uniformly, the linear beam has an energy distribution along the long side. By irradiating the semiconductor film with this linear beam, the entire semiconductor film is uniformly This allows the surface to be annealed more uniformly. Uniform annealing is possible up to both ends of the linear beam. If necessary, slits can be placed on both ends to block the energy attenuation area. is required.

[0119] The laser beam used to form the opening was a continuous wave (CW) laser beam. A laser beam of a pulsed type or a laser beam of a 1000 Hz type can be used. For example, the frequency, power density, energy density, beam profile, etc., are set according to the conditions of the undercoat film 20 The thickness and material of the separation layer 222 and the like are taken into consideration and appropriately controlled.

[0120] 16 and 17, the substrate 221 and the laminated structure on the substrate 221 in the separation process are This explains along which direction the image should be separated.

[0121] A top view of the laminated structure shown in FIG. 5(B) is shown in FIG. 16. However, in FIG. 16, the substrate 22 1, only the partition 275, the electrode 113, the region 122R, the region 122G, and the region 122B are shown. The regions 122R, 122G, and 122B will be described below.

[0122] The organic layers 112 that emit the same color are arranged in a row next to each other. The region where the organic layers 112R that emit green light are arranged is called a region 122R. The region where the blue-emitting organic layers 112B are arranged is called a region 122G. This is referred to as region 122B (see FIG. 17).

[0123] The partition wall 275 is disposed between the organic layer 112R and the organic layer 112G, and between the organic layer 112G and the It is present between the inorganic layer 112B and the organic layer 112B, and between the organic layer 112B and the organic layer 112R. As shown in FIG. 16, the partition wall 275 is formed between the organic layer 112R, the organic layer 112G, and the organic layer 112R. It can be said that the layers 112B each extend in the same direction.

[0124] In FIG. 16, a direction 125 is parallel to one side of the substrate 221, and a region 122R , region 122G, and region 122B (collectively referred to as region 122) extend in the direction The substrate 221 and the laminated structure on the substrate 221 are separated along the direction 125, which is a vertical direction. 2. Then, the force to separate is applied alternately to the partition 275 and the region 122. .

[0125] The adhesion between the electrode 113 and the region 122 including the organic layer 112 is weak, while the adhesion between the electrode 11 Since the adhesion between the 3 and the partition wall 275 is strong, the part with weak adhesion and the part with strong adhesion are separated in the separation process. Since the electrodes 113 and the region 122 are alternately arranged, the electrodes 113 and the region 122 can be prevented from being separated from each other. .

[0126] On the other hand, in the direction in which the regions 122R, 122G, and 122B extend, When the substrate 221 and the laminated structure on the substrate 221 are separated along the direction 126, This force is always applied to the partition 275 and the region 122, respectively.

[0127] As a result, the adhesion between the electrode 113 and the partition wall 275 is strong, while the adhesion between the electrode 113 and the region 122 is strong. Since the adhesion is weak and there are continuous areas with weak adhesion, the electrode 113 and the region 122 There is a risk of separation.

[0128] As a result, the separation direction is perpendicular to the direction in which the region 122 extends, and the partition wall 2 It is necessary that the direction 125 be such that the areas 75 and 122 alternate.

[0129] By separating the substrate 221, the undercoat film 204, the TFT 211, the insulating film 208, the electrodes 217, a partition wall 275, an organic layer 112, an electrode 113, a sealing layer 114, and a protective material 241. A laminated structure 237 and a support 242 are obtained (see FIG. 6(B)).

[0130] The substrate 201 is bonded to the undercoat film 204 in the laminated structure 237. The substrate 201 may be laminated using a bonding layer 203 (see FIG. 2). The material or the structure 305 described in FIG. 7(A) to FIG. 7(C), FIG. 8, and FIG. 9 is used. Thereafter, the support 242 is separated from the laminated structure 237.

[0131] The adhesive layer 203 may be a photo-curable adhesive such as a reaction-curable, heat-curable, or ultraviolet-curable adhesive, or an anaerobic adhesive. Various curing adhesives such as epoxy resins can be used. Examples of resins include acrylic resins, silicone resins, and phenolic resins.

[0132] As described above, in the separation process using the separation layer 222, the electrode 113 and the partition wall 275 are in contact with each other. Since the contact area is large, the electrode 113 and the organic layer 112 can be prevented from being separated. do.

[0133] In this manner, the light emitting device 235 can be manufactured.

[0134] [Embodiment 2] In this embodiment, a mobile phone incorporating the light-emitting device described in the first embodiment will be described. 10(A) to 10(D), 11(A) to 11(B), 12, 13, and 14 The present embodiment will be described with reference to FIGS. 14(A) to 14(D) and 15(A) to 15(B). In the drawings, the same parts are denoted by the same symbols.

[0135] FIG. 10(C) is a front view of the mobile phone, and FIG. 10(D) is a side view of the mobile phone. 10B is a top view of the mobile phone, and FIG. 10A is a cross-sectional view of the housing 411. The shape of the housing 411 when viewed from the front is a rectangle having a long side and a short side. In this embodiment, the corners are rounded in a direction parallel to the long side of the rectangular shape shown in FIG. is called the longitudinal direction, and the direction parallel to the shorter side is called the transverse direction.

[0136] In addition, the shape of the housing 411 when viewed from the side is also a rectangle having a long side and a short side. In this embodiment, the corners are rounded in a direction parallel to the long side of the rectangular side shape. is the longitudinal direction, and the direction parallel to the short side is called the depth direction.

[0137] The mobile phone shown in FIG. 10(A) to FIG. 10(D) includes a housing 411, a housing 402, a housing A display area 413, an operation button 404, an EL panel 421, and a touch panel 412 are incorporated in the The substrate 416 includes a support 416 and a panel 423 .

[0138] The EL panel 421 and the driver circuit 412 described later are the same as those described in the first embodiment. The EL panel 421 may be formed by using a light-emitting element. The pixel circuit may be fabricated using a semiconductor circuit element. The circuit 412 may be fabricated using a semiconductor circuit element. An element formed using a conductor, with circuits including thin film transistors, diodes, etc. It is something.

[0139] FIG. 15A is a perspective view of the housing 411, and shows the largest area of ​​the housing 411. The surface of the front surface 455 is the back surface 452, and the surface between the front surface 455 and the back surface 452 is the back surface 452. The area surrounded by the side 453, the front 455, the back 452 and the side 453 is One side is designated as the upper surface 454 .

[0140] FIG. 11(A) is a diagram of the mobile phone shown in FIG. 10(A) to FIG. 10(D) as viewed from the back. It is.

[0141] As shown in FIG. 11(A), the driving circuit 412 is arranged on the back surface 452 of the housing 411. It is made as follows.

[0142] FIG. 11(B) is a top view of the state shown in FIG. 10(C) rotated 90 degrees to the side. The mobile phone of the present embodiment can display images and characters whether it is placed vertically or horizontally. This can be done.

[0143] As shown in FIG. 10A, a support 416 is provided inside the housing 411. An EL panel 421 is disposed on the support 416. Here, the EL panel 421 covers the upper surface area of ​​the support 416. There are.

[0144] In this way, the display area 413 is present at the top in the longitudinal direction of the mobile phone. A display area 413 is present on the top surface 454. This allows the user to carry the mobile phone in, for example, a chest pocket. Even if the mobile phone is in a mobile phone pocket, it is possible to view the display area 413 without taking it out.

[0145] The display area 413 can display whether there is an email, whether there is an incoming call, the date and time, a phone number, a person's name, etc. Also, if necessary, only the area of ​​the display area 413 that exists on the top surface 454 may be displayed. By displaying only certain areas and not displaying other areas, energy savings can be achieved.

[0146] A cross-sectional view of FIG. 10(D) is shown in FIG. 12. As shown in FIG. 12, in the housing 411, An EL panel 421 and a touch panel 423 are arranged along the support 416. Area 413 is present on front surface 455 and top surface 454 of housing 411 .

[0147] FIG. 13 shows an exploded view of the EL panel 421 and the driver circuit 412. In the present embodiment, the EL panel 421 is fabricated so as to be disposed on the top surface 454 and the back surface 452. The driving circuit 412 is disposed on the back surface 452. 55 and the top surface 454, but are not separately formed on both the front surface 455 and the top surface 454. Since the EL panel 421 is manufactured so as to be able to reduce the manufacturing cost and time. do.

[0148] A touch panel 423 is disposed on the EL panel 421, and the display area 413 includes A touch panel button 414 is displayed. When the button 414 is touched with a finger or the like, The display contents of the display area 413 can be operated. The creation of the rule can be performed by touching the button 414 in the display area 413 with a finger or the like. Cut.

[0149] The button 414 on the touch panel 423 may be displayed when necessary. When no image or text is required, the image or text is displayed over the entire display area 413 as shown in FIG. 11(B). It is possible to do so.

[0150] Furthermore, a display area 433 is also present at the upper portion of the mobile phone in the longitudinal direction. In the cross-sectional shape, the upper long side also has a radius of curvature. This is shown in FIG. 15(B).

[0151] FIG. 14(C) is a front view of the mobile phone, and FIG. 14(D) is a side view of the mobile phone. 14B is a top view of the mobile phone, and FIG. 14A is a cross-sectional view of the housing 431. The shape of the housing 431 as viewed from the front is a rectangle having a long side and a short side. The corners may be rounded. In this embodiment, the direction parallel to the long side of the rectangle is called the longitudinal direction. The direction parallel to the short side is called the short side direction.

[0152] The mobile phone shown in FIG. 14(A) to FIG. 14(D) includes a housing 431, a housing 402, a housing A display area 433, an operation button 404, an EL panel 441, and a touch panel 432 are incorporated in the It has a support 436 and a panel 443 .

[0153] The EL panel 441 and the driver circuit 412 are made of the light emitting element and the semiconductor The EL panel 441 may be formed using a light-emitting element. A semiconductor circuit element may be used as a pixel circuit for driving the element. The driver circuit 412 may further be fabricated using semiconductor circuit elements.

[0154] FIG. 15B is a perspective view of the housing 431, and like FIG. 15A, The largest area of ​​1 is the front surface 455, the opposite surface of the front surface 455 is the back surface 452, and the front surface 45 The area between the side 453, the front 455, the back 452 and the side 45 One of the areas surrounded by 3 is designated as the upper surface 454.

[0155] In addition, the rear view of the mobile phone shown in FIG. 14(A) to FIG. 14(D) is the same as that shown in FIG. ) is the same as that shown in FIG. 10(D) and FIG. 11(A).

[0156] As in FIG. 11(A), the driving circuit 412 is arranged on the rear surface 452 of the housing 431. The rear view of the mobile phone shown in FIG. 14(A) to FIG. 14(D) is The housing 411 in FIG. 11(A) can be read as housing 431.

[0157] In the mobile phone shown in FIG. 14(A) to FIG. 14(D), the cross-sectional shape of the support 436 is The long side is formed to have a radius of curvature. In the cross-sectional shape of each of the tubes 443, a radius of curvature is generated on the upper long side. That is, when the display area 433 is viewed from the front 455, It will end up protruding in a round shape.

[0158] If the radius of curvature of the upper long side of the support 436 is R1, the radius of curvature R1 is 20 cm to 30 cm. cm is preferred.

[0159] The upper long side of the support 436 is curved to have a radius of curvature R1, so that the support 4 36, an EL panel 441 covering the EL panel 441, a touch panel 443 covering the EL panel 441, and a case Body 431 also has a curved upper long side.

[0160] The mobile phone shown in FIG. 14(A) to FIG. 14(D) is also displayed on the upper part in the longitudinal direction of the mobile phone. That is, the display area 433 also exists on the upper surface 454. This allows you to, for example, turn on your mobile phone without taking it out of your breast pocket. A display area 433 can be seen.

[0161] The display area 433 can display whether there is an email, whether there is an incoming call, the date and time, a phone number, a person's name, etc. Also, if necessary, only the area of ​​the display area 433 that exists on the top surface 454 may be displayed. By displaying only certain areas and not displaying other areas, energy savings can be achieved.

[0162] The development of the EL panel 441 and the driving circuit 412 is shown in FIG. 10(A) to FIG. 10(D). Similarly, in FIG. 13, the EL panel 421 should be read as the EL panel 441. , the driving circuit 412 is disposed on the top surface 454 as well as the back surface 452 . [Explanation of symbols]

[0163] 101 Substrate 102 Separation layer 103 Semiconductor circuit elements 104 Electrode 105 Bulkhead 106 Electrode 107 Sealing layer 108 Protective Materials 109 Support 111 Base 112 Organic layer 112R Organic layer 112G Organic layer 112B Organic layer 113 Electrode 114 Sealing layer 122 areas 122R area 122G area 122B area 125 directions 126 directions 201 Base 203 Adhesive layer 204 Base film 205 Gate insulating film 206 Insulating Film 207 Insulating Film 208 Insulating film 211 TFT 215a electrode 215b electrode 217 Electrode 221 Substrate 222 Separation layer 225 Island-shaped semiconductor film 233 Channel formation region 234a area 234b area 235 Light-emitting device 236 Gate electrode 237 Laminated Structure 241 Protective Materials 242 Support 275 Bulkhead 301 Organic resin 302 Sheet-like fibrous body 302a Warp thread 302b Weft 302c Basketball Hall 305 Structure 402 Case 404 Operation button 411 Case 412 Drive circuit 413 Display area 414 Button 416 Support 421 EL Panel 423 Touch Panel 431 Case 433 Display area 436 Support 441 EL Panel 443 Touch Panel 452 Back side 453 Side 454 Top surface 455 Front

Claims

1. A housing and The display device includes a support body, an EL panel, a touch panel, a drive circuit, and an operation button, which are incorporated in the housing; the EL panel is disposed across the front surface and rear surface of the support and is provided so as to have a curved portion; the touch panel is provided along the EL panel on the front surface, the back surface, and the curved portion of the support, the touch panel is provided on the rear surface of the support body so as not to overlap with the drive circuit, The electronic device, wherein the operation button is provided on a side surface of the housing.

2. In claim 1, The touch panel is disposed between a display area of ​​the electronic device and the drive circuit.

Images