High frequency module and communication device

Abstract

To provide a high frequency module capable of reducing electromagnetic interference between a first electronic component and a second electronic component and of being miniaturized.SOLUTION: A high frequency module 1 includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, a third electronic component 50C, and a side shield electrode 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a. The second electronic component 50B is disposed on the first main surface 51a. The third electronic component 50C is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a. The side shield electrode 55 is provided on at least one side surface 50u, 50v of the third electronic component 50C. The mounting substrate 51 includes a ground layer 51g. The side shield electrode 55 is connected to the ground layer 51g.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device including a third electronic component disposed between a first electronic component and a second electronic component.

Background Art

[0002] The high-frequency module described in Patent Document 1 includes a module substrate (mounting substrate), a transmission filter (first electronic component), a reception filter (second electronic component), and a metal shield wall. The transmission filter and the reception filter are disposed on one main surface of the module substrate. The metal shield wall is disposed between the transmission filter and the reception filter on the one main surface of the module substrate. The metal shield wall reduces the leakage of electromagnetic waves propagating from the transmission filter to the reception filter, thereby reducing the interference of electromagnetic waves (signals) between the transmission filter and the reception filter.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the configuration of Patent Document 1, since it is necessary to dispose a metal shield wall between the transmission filter and the reception filter, there is a problem that the high-frequency module becomes large-sized.

[0005] In view of the above problems, an object of the present invention is to provide a high-frequency module and a communication device capable of reducing electromagnetic wave interference between a first electronic component and a second electronic component and being miniaturized.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a first electronic component, a second electronic component, a third electronic component, and a side shield electrode. The mounting substrate has a first main surface and a second main surface facing each other. The first electronic component is disposed on the first main surface of the mounting substrate. The second electronic component is disposed on the first main surface of the mounting substrate. The third electronic component is disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate. The side shield electrode is provided on at least one side surface of the third electronic component. The mounting substrate has a ground layer. The side shield electrode is connected to the ground layer.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module and processes high-frequency signals.

Advantages of the Invention

[0008] According to the high-frequency module and the communication device of the present invention, there is an advantage that interference of signals between the first electronic component and the second electronic component can be reduced and miniaturization is possible.

Brief Description of the Drawings

[0009]

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BEST MODE FOR CARRYING OUT THE INVENTION

[0010] (Embodiment 1) The high-frequency module 1 and the communication device 30 according to Embodiment 1 will be described in detail with reference to the drawings.

[0011] (1) Overview As shown in FIG. 2, the high-frequency module 1 according to Embodiment 1 includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, a third electronic component 50C, and a side shield electrode 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is disposed on the first main surface 51a of the mounting substrate 51. The third electronic component 50C is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51. The side shield electrode 55 is provided on at least one side surface of the third electronic component 50C. The mounting substrate 51 has a ground layer 51g. The side shield electrode 55 is connected to the ground layer 51g of the mounting substrate 51.

[0012] According to this configuration, the side shield electrode 55 provided on the outer peripheral surface 50t of the third electronic component 50C can reduce the interference of electromagnetic waves (signals) between the first electronic component 50A and the second electronic component 50B. Further, since the side shield electrode 55 is disposed using the outer peripheral surface 50t of the third electronic component 50C, there is no need to secure an arrangement space for the shield wall on the first main surface 51a of the mounting substrate 51 as compared with the case where a shield wall is disposed separately from the third electronic component 50C. As a result, the high-frequency module 1 can be miniaturized. From the above, the interference of electromagnetic waves between the first electronic component 50A and the second electronic component 50B can be reduced, and the high-frequency module 1 can be miniaturized.

[0013] (2) Configuration of Communication Device As shown in FIG. 1, the communication device 30 is a communication device including a high-frequency module 1. The communication device 30 is, for example, a mobile terminal (e.g., a smartphone), but is not limited thereto, and may be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is a module capable of supporting, for example, 4G (Fourth Generation Mobile Communication) standard and 5G (Fifth Generation Mobile Communication) standard. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project), or LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0014] In addition to the high-frequency module 1, the communication device 30 includes a signal processing circuit 2 and an antenna 3.

[0015] The high-frequency module 1 is configured to amplify a received signal (high-frequency signal) received by the antenna 3 and output it to the signal processing circuit 2. Further, the high-frequency module 1 is configured to amplify a transmission signal (high-frequency signal) output from the signal processing circuit 2 and transmit it from the antenna 3. The high-frequency module 1 is controlled, for example, by the signal processing circuit 2.

[0016] The signal processing circuit 2 is connected to the high-frequency module 1 and is configured to process the received signal output from the high-frequency module 1. The signal processing circuit 2 is configured to process the transmission signal output to the high-frequency module 1. The signal processing circuit 2 includes an RF (Radio Frequency) signal processing circuit 2a and a baseband signal processing circuit 2b.

[0017] The RF signal processing circuit 2a is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmission signals and reception signals). The RF signal processing circuit 2a performs signal processing such as down-conversion on the reception signal output from the high-frequency module 1 and outputs it to the baseband signal processing circuit 2b. Further, the RF signal processing circuit 2a performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 2b and outputs it to the high-frequency module 1.

[0018] The baseband signal processing circuit 2b is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 2b outputs the reception signal output from the RF signal processing circuit 2a to the outside. This output signal (reception signal) is used, for example, as an image signal for image display or as an audio signal for a call. Further, the baseband signal processing circuit 2b generates a transmission signal from the baseband signal (for example, an audio signal and an image signal) input from the outside, and outputs the generated transmission signal to the RF signal processing circuit 2a.

[0019] (3) Configuration of the high-frequency module As shown in FIG. 1, the high-frequency module 1 includes a plurality of external terminals 5a to 5e, a plurality of electronic components 50, and a plurality of signal paths (in the example of FIG. 1, the first signal path L1 and the second signal path L2). The plurality of electronic components 50 include, in the example of FIG. 1, a switch 6, a transmission filter 7, a reception filter 8, a power amplifier 10, a low-noise amplifier 11, matching circuits 13 to 16, and a controller 19.

[0020] The external terminal 5a is an antenna terminal to which the antenna 3 is connected. The external terminal 5b is connected to an output section (not shown) of the signal processing circuit 2 and is an input terminal to which a transmission signal output from the output section of the signal processing circuit 2 is input. The external terminal 5c is connected to an input section (not shown) of the signal processing circuit 2 and is an output terminal that outputs a received signal processed by the high-frequency module 1 to the input section of the signal processing circuit 2. The external terminal 5d is connected to a signal output section (not shown) of the signal processing circuit 2 and is a signal input terminal for inputting a control signal for controlling the controller 19 from the signal processing circuit 2. The external terminal 5e is a terminal for maintaining the ground electrodes of the plurality of electronic components 50 at the ground potential. The external terminal 5e is electrically connected to the ground and is maintained at the ground potential. By electrically connecting the ground electrodes of each of the plurality of electronic components 50 to the external terminal 5e, the ground electrodes of each of the plurality of electronic components 50 are maintained at the ground potential.

[0021] Note that "A is connected to B" is not limited to the case where A directly contacts B, and also includes the case where A indirectly contacts B via a conductive member. Also, "A is electrically connected to B" means that A and B are connected so as to be electrically conductive.

[0022] The switch 6 selects at least one of the first signal path L1 and the second signal path L2 and connects the selected communication path to the antenna 3. The switch 6 operates according to a control signal from the controller 19. The switch 6 is, for example, a switch IC (Integrated Circuit). The switch 6 has a common terminal 6a, a first selection terminal 6b, and a second selection terminal 6c. The common terminal 6a can be selectively connected to at least one of the first selection terminal 6b and the second selection terminal 6c. The common terminal 6a is connected to the external terminal 5a. The first selection terminal 6b is connected to the first signal path L1. The second selection terminal 6c is connected to the second signal path L2.

[0023] The first signal path L1 is a communication path connecting the first selection terminal 6b and the external terminal 5b. In the first signal path L1, the output signal of the external terminal 5b is transmitted to the first selection terminal 6b. The second signal path L2 is a communication path connecting the second selection terminal 6c and the external terminal 5c. In the second signal path L2, the output signal of the second selection terminal 6c is transmitted to the external terminal 5c.

[0024] The transmission filter 7 has a transmission band (communication band) including the first communication band as a passband. The transmission filter 7 is provided in the first signal path L1. That is, the transmission filter 7 is connected between the first selection terminal 6b of the switch 6 and the external terminal 5b.

[0025] The transmission filter 7 includes an input section 7a and an output section 7b. The input section 7a is connected to the output section 10b of the power amplifier 10 via the matching circuit 14. The output section 7b is connected to the first selection terminal 6b of the switch 6 via the matching circuit 13. The transmission filter 7 restricts the input signal (transmission signal) input to the input section 7a to a signal in the transmission band of the first communication band and passes it, and outputs the passed transmission signal from the output section 7b.

[0026] The reception filter 8 has a reception band (communication band) including the second communication band as a passband. The second communication band may be a communication band that at least partially overlaps with the first communication band, or may be a communication band that does not overlap with the first communication band at all. The reception filter 8 is provided in the second signal path L2. That is, the reception filter 8 is connected between the second selection terminal 6c of the switch 6 and the external terminal 5c.

[0027] The reception filter 8 has an input section 8a and an output section 8b. The input section 8a is connected to the second selection terminal 6c of the switch 6 via the matching circuit 15. The output section 8b is connected to the input section 11a of the low-noise amplifier 11 via the matching circuit 16. The reception filter 8 restricts the input signal (reception signal) input to the input section 7a to a signal in the reception band of the third communication band and passes it, and outputs the passed reception signal from the output section 8b.

[0028] The transmission filter 7 and the reception filter 8 are, for example, elastic wave filters having a piezoelectric substrate. More specifically, the transmission filter 7 and the reception filter 8 are, for example, SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, or FBAR (Film Bulk Acoustic Resonator) filters.

[0029] The power amplifier 10 is provided between the input portion 7a of the transmission filter 7 and the external terminal 5b in the first signal path L1. The power amplifier 10 has an input portion 10a and an output portion 10b. The input portion 10a is connected to the external terminal 5b. The output portion 10b is connected to the input portion 7a of the transmission filter 7 via the matching circuit 14. The power amplifier 10 amplifies the transmission signal input to the input portion 10a, and outputs the amplified transmission signal from the output portion 10b to the input portion 7a of the transmission filter 7 via the matching circuit 14.

[0030] The low-noise amplifier 11 is provided between the output portion 8b of the reception filter 8 and the external terminal 5c in the second signal path L2. The low-noise amplifier 11 has an input portion 11a and an output portion 11b. The input portion 11a is connected to the output portion 8b of the reception filter 8 via the matching circuit 16. The output portion 11b is connected to the external terminal 5c. The low-noise amplifier 11 amplifies the reception signal input to the input portion 11a, and outputs the amplified reception signal from the output portion 11b to the external terminal 5c.

[0031] The matching circuit 13 is provided between the first selection terminal 6b of the switch 6 and the transmission filter 7 in the first signal path L1. The matching circuit 13 is a circuit for impedance matching between the switch 6 and the transmission filter 7. The matching circuit 13 includes, for example, an inductor connected in series to the first signal path L1, or an inductor connected between the first signal path L1 and the ground.

[0032] The matching circuit 14 is provided between the transmission filter 7 and the power amplifier 10 in the first signal path L1. The matching circuit 14 is a circuit for impedance matching between the transmission filter 7 and the power amplifier 10. The matching circuit 14 includes, for example, an inductor connected in series to the first signal path L1, or an inductor connected between the first signal path L1 and the ground.

[0033] The matching circuit 15 is provided between the second selection terminal 6c of the switch 6 and the reception filter 8 in the second signal path L2. The matching circuit 15 is a circuit for impedance matching between the switch 6 and the reception filter 8. The matching circuit 15 includes, for example, an inductor connected in series to the second signal path L2, or an inductor connected between the second signal path L2 and the ground.

[0034] The matching circuit 16 is provided between the reception filter 8 and the low-noise amplifier 11 in the second signal path L2. The matching circuit 16 is a circuit for impedance matching between the reception filter 8 and the low-noise amplifier 11. The matching circuit 16 includes, for example, an inductor connected in series to the second signal path L2, or an inductor connected between the second signal path L2 and the ground.

[0035] The controller 19 controls the electronic components (such as the switch 6, the power amplifier 10, and the low-noise amplifier 11, etc.) included in the high-frequency module 1 according to the control signal from the signal processing circuit 2. The controller 19 is electrically connected to each of the above-mentioned electronic components. Further, the controller 19 is connected to the signal output section of the signal processing circuit 2 via the external terminal 5d. The controller 19 controls each of the above-mentioned electronic components according to the control signal input from the signal output section of the signal processing circuit 2 to the external terminal 5d.

[0036] (4) Operation The operation of the high-frequency module 1 will be described.

[0037] When the high-frequency module 1 is transmitting, the common terminal 6a of the switch 6 is selectively connected to the first selection terminal 6b. As a result, the transmission signal processed by the signal processing circuit 2 is input from the signal processing circuit 2 to the external terminal 5b. Then, the transmission signal input to the external terminal 5b passes through the power amplifier 10, the matching circuit 14, the transmission filter 7, and the matching circuit 13 in sequence and is output to the first selection terminal 6b of the switch 6. At this time, the transmission signal is amplified by the power amplifier 10 and restricted to the signal of the first communication band by the transmission filter 7. Then, the transmission signal is output from the first selection terminal 6b to the external terminal 5a via the common terminal 6a and is transmitted externally from the antenna 3.

[0038] When the high-frequency module 1 is receiving, the common terminal 6a of the switch 6 is selectively connected to the second selection terminal 6c. As a result, the received signal received by the antenna 3 flows from the common terminal 6a to the second selection terminal 6c. Then, the received signal passes through the matching circuit 15, the reception filter 8, the matching circuit 16, and the low-noise amplifier 11 in sequence and is output to the external terminal 5c. At this time, the received signal is restricted to the signal of the second communication band by the reception filter 8 and amplified by the low-noise amplifier 11. Then, the received signal is output from the external terminal 5c to the signal processing circuit 2.

[0039] (5) An example of the structure of the high-frequency module As shown in FIG. 2, in addition to the above-described plurality of electronic components 50 and external terminals 5a to 5e, the high-frequency module 1 further includes a mounting substrate 51, a plurality of pad electrodes 52, a resin member 53, an external shield electrode 54, and a side shield electrode 55.

[0040] The mounting substrate 51 is a substrate on which a plurality of electronic components 50 are arranged (mounted). The mounting substrate 51 is, for example, a rectangular flat plate in a plan view from the thickness direction D1 of the mounting substrate 51. The mounting substrate 51 is, for example, a resin multilayer substrate. Note that the mounting substrate 51 is not limited to a resin multilayer substrate, and may be, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics) substrate, or an HTCC (High Temperature Co-fired Ceramics) substrate.

[0041] The mounting substrate 51 has a first main surface 51a, a second main surface 51b, and an outer peripheral surface 51c. The first main surface 51a and the second main surface 51b are main surfaces that face each other in the thickness direction D1 of the mounting substrate 51. The outer peripheral surface 51c is a cylindrical surface that connects the outer peripheral edges of each of the first main surface 51a and the second main surface 51b. A plurality of pad electrodes 52 are provided on the first main surface 51a of the mounting substrate 51. The plurality of pad electrodes 52 are portions where external electrodes 50a (described later) of each of the plurality of electronic components 50 are connected, for example, by solder. A plurality of external terminals 5a to 5e of the high-frequency module 1 are provided on the second main surface 51b of the mounting substrate 51. In FIG. 2, as an example, only the external terminals 5a and 5e are illustrated.

[0042] More specifically, the mounting substrate 51 is, for example, a multilayer substrate including a plurality of dielectric layers (insulating layers) and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are alternately laminated in the thickness direction D1 of the mounting substrate 51. The plurality of conductive layers are formed in a predetermined pattern defined for each layer. The material of each conductive layer is, for example, copper. Each of the plurality of conductive layers is electrically connected to another conductive layer, the plurality of pad electrodes 52, or the plurality of external terminals 5a to 5e by via electrodes provided on the mounting substrate 51.

[0043] The plurality of conductive layers includes a ground layer 51g. The ground layer 51g is electrically connected to an external terminal 5e by a via electrode 51e provided on the mounting substrate 51. The external terminal 5e is a ground terminal that is electrically connected to the ground. By connecting the ground layer 51g to the ground via the external terminal 5e, the potential of the ground layer 51g is maintained at the ground potential. The ground layer 51g is electrically connected to a pad electrode 52 that is electrically connected to a ground electrode 50g (to be described later) of each of the plurality of electronic components 50 by a via electrode 51f provided on the mounting substrate 51. The ground layer 51g is electrically connected to an external shield electrode 54 on the outer peripheral surface 51c of the mounting substrate 51.

[0044] The mounting substrate 51 is, for example, a substrate having a single-sided mounting structure in which a plurality of electronic components 50 are mounted on one side (for example, the first main surface 51a) of the mounting substrate 51. The plurality of electronic components 50 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. In the example of FIG. 2, as an example, only the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C among the plurality of electronic components 50 are illustrated.

[0045] More specifically, each of the plurality of electronic components 50 has a plurality of external electrodes 50a. Each of the plurality of external electrodes 50a is connected to any one of the plurality of pad electrodes 52 provided on the first main surface 51a of the mounting substrate 51, for example, by solder. The plurality of external electrodes 50a includes a ground electrode 50g. The ground electrode 50g is connected to a pad electrode 52 that is electrically connected to the ground layer 51g, for example, by solder.

[0046] The first electronic component 50A is, for example, any one of the electronic components 50 for transmission. The electronic component 50 for transmission is an electronic component that is used when transmitting a transmission signal among the plurality of electronic components 50 and is an electronic component connected to a first signal path L1 (transmission path). In Embodiment 1, the first electronic component 50A is, for example, any one of a transmission filter 7, a power amplifier 10, a matching circuit 13, and a matching circuit 14.

[0047] The second electronic component 50B is, for example, any one of the electronic components 50 for reception. The electronic component 50 for reception is an electronic component 50 that is used when receiving a reception signal among a plurality of electronic components 50, and is an electronic component 50 connected to the second signal path L2 (reception path). In Embodiment 1, the second electronic component 50B is, for example, any one of a reception filter 8, a low-noise amplifier 11, a matching circuit 15, and a matching circuit 16.

[0048] The third electronic component 50C is an electronic component 50 disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51. Note that "C is disposed between A and B" as referred to in Embodiment 1 means that at least one of a plurality of line segments connecting an arbitrary point in the region of A and an arbitrary point in the region of B passes through the region of C in a plan view of the mounting substrate 51 as viewed from the thickness direction D1. The third electronic component 50C is, for example, a surface acoustic wave filter (for example, a SAW filter, a BAW filter, or an FBAR filter) having a piezoelectric element such as a transmission filter 7 or a reception filter 8.

[0049] The third electronic component 50C has a top surface 50s and an outer peripheral surface 50t. The top surface 50s is a main surface on the side opposite to the mounting substrate 51 in the third electronic component 50C. The outer peripheral surface 50t is a cylindrical surface extending from the outer periphery of the top surface 50s in the third electronic component 50C toward the mounting substrate 51 side. More specifically, the outer peripheral surface 50t has a plurality (for example, four) of side surfaces. That is, the third electronic component 50C is in a plate shape of a polygon (for example, a quadrangle) in a plan view from the thickness direction (thickness direction D1 of the mounting substrate 100) of the third electronic component 50C.

[0050] The height d3 of the third electronic component 50C is higher than the heights of the other electronic components 50 (in FIG. 2, the height d2 of the first electronic component 50A and the height d2 of the second electronic component 50B). Thus, as will be described later, among the plurality of electronic components 50, by directly contacting the top surface 50s of only the third electronic component 50C with the external shield electrode 54, it is possible to electrically connect the top surface 50s of the third electronic component 50C and the external shield electrode 54. Here, the "height of the electronic component 50" is the distance from the first main surface 51a of the mounting substrate 51 in the electronic component 50 to the top surface of the electronic component 50. Here, the "top surface of the electronic component 50" is the main surface on the side opposite to the mounting substrate 51 side in the electronic component 50.

[0051] The side shield electrode 55 is provided on at least a part (for example, the sides 50u, 50v) of the outer peripheral surface 50t of the third electronic component 50C. The side shield electrode 55 is formed of a conductive member (for example, copper or the like). The side shield electrode 55 is disposed between the first electronic component 50A and the second electronic component 50B, and is a member that can shield electromagnetic waves propagating from the first electronic component 50A, which is an electronic component for transmission, to the second electronic component 50B, which is an electronic component for reception.

[0052] More specifically, the side shield electrode 55 is provided on at least one of the four sides of the outer peripheral surface 50t of the third electronic component 50C. Even more specifically, the four sides include a first side 50u facing the first electronic component 50A and a second side 50v facing the second electronic component 50B. The side shield electrode 55 is provided on at least one of the first side 50u and the second side 50v. In the example of FIG. 2, the side shield electrode 55 is provided on the first side 50u and the second side 50v. In Embodiment 1, the side shield electrode 55 is provided, for example, over the entire outer peripheral surface 50t of the third electronic component 50C.

[0053] The side shield electrode 55 has an end portion 55a. The end portion 55a is the end portion on the top surface 50s side of the third electronic component 50C in the side shield electrode 55. The end portion 55a is disposed on the outer periphery of the top surface 50s. By the contact between the end portion 55a and the external shield electrode 54, the side shield electrode 55 is electrically connected to the external shield electrode 54. The side shield electrode 55 is electrically connected to the ground layer 51g of the mounting substrate 51 via the external shield electrode 54. Thereby, the potential of the side shield electrode 55 is maintained at the ground potential.

[0054] The resin member 53 seals a plurality of electronic components 50 disposed on the first main surface 51a of the mounting substrate 51. The resin member 53 contains a resin (for example, an epoxy resin). The resin member 53 may contain a filler in addition to the resin. The resin member 53 is provided on the first main surface 51a of the mounting substrate 51. The resin member 53 covers the first main surface 51a of the mounting substrate 51. The resin member 53 covers a plurality of electronic components 50 disposed on the first main surface 51a of the mounting substrate 51. More specifically, for the electronic components 50 other than the third electronic component 50C, the resin member 53 covers the entire electronic component 50. For the third electronic component 50C, the resin member 53 exposes the top surface 50s and covers the surfaces other than the top surface 50s of the outer surface of the third electronic component 50C. The resin member 53 covers the side shield electrode 55 provided on the outer peripheral surface 50t of the third electronic component 50C. More specifically, the resin member 53 exposes the end portion 55a and covers the surfaces other than the end portion 55a of the side shield electrode 55.

[0055] The outer surface 53s of the resin member 53 has a top surface 53q and an outer peripheral surface 53r. The top surface 53q is the main surface of the resin member 53 on the side opposite to the mounting substrate 51 side. The outer peripheral surface 53r is a surface extending in a cylindrical shape from the outer peripheral surface of the top surface 53q toward the mounting substrate 51 side. The top surface 53q of the resin member 53 is flush (even) with the top surface 50s of the third electronic component 50C.

[0056] The external shield electrode 54 is a member for electromagnetically shielding the inside and outside of the high-frequency module 1. The external shield electrode 54 is composed of a conductive member (such as copper). The external shield electrode 54 is composed of, for example, one metal layer, but is not limited thereto, and may have a multilayer structure in which a plurality of metal layers are laminated. The external shield electrode 54 is provided at least on the outer surface 53s of the resin member 53 and covers the entire outer surface 102s of the resin member 53.

[0057] More specifically, the external shield electrode 54 covers the entire outer surface 53s of the resin member 53, the top surface 50s of the third electronic component 50C, the end portion 55a of the side shield electrode 55, and at least a part of the outer peripheral surface 51c of the mounting substrate 51. By covering at least a part of the outer peripheral surface 51c of the mounting substrate 51, the external shield electrode 54 is electrically connected to the ground layer 51g of the mounting substrate 51 on the outer peripheral surface 51c of the mounting substrate 51. Thereby, the potential of the external shield electrode 54 is maintained at the ground potential via the ground layer 51g. Further, the external shield electrode 54 covers the top surface 50s of the third electronic component 50C and the end portion 55a of the side shield electrode 55. By covering the end portion 55a of the side shield electrode 55, the external shield electrode 54 is electrically connected to the end portion 55a of the side shield electrode 55. Thereby, the side shield electrode 55 is maintained at the ground potential via the external shield electrode 54.

[0058] (6) An example of the structure of the third electronic component As shown in FIG. 3, the third electronic component 50C is, for example, a surface acoustic wave filter. The third electronic component 50C includes a piezoelectric substrate 66, a plurality of IDT electrodes 62, a plurality of terminals 63, a spacer layer 67, a cover member 65, and a plurality of external electrodes 50a.

[0059] The piezoelectric substrate 66 has a first main surface 66a and a second main surface 66b that face each other.

[0060] The IDT electrode 62 is provided on the first main surface 66a of the piezoelectric substrate 66. The first main surface 66a is the main surface of the piezoelectric substrate 66 that faces the first main surface 51a of the mounting substrate 51. The material of the piezoelectric substrate 66 is, for example, lithium tantalate or lithium niobate. The IDT electrode 62 has a lead-out electrode 62a.

[0061] The plurality of terminals 63 are electrically connected to a determined lead-out electrode 62a among the lead-out electrodes 62a of each of the plurality of IDT electrodes 62. The plurality of terminals 63 are, for example, columnar. The plurality of terminals 63 are arranged standing on the first main surface 66a of the piezoelectric substrate 66. The plurality of terminals 63 are provided so as to penetrate a cover member 65 described later. The end surface 63a of each of the plurality of terminals 63 is exposed from a second main surface 65b (outer main surface) of the cover member 65 described later.

[0062] The spacer layer 67 is provided in a frame shape so as to surround the plurality of IDT electrodes 62 on the first main surface 66a of the piezoelectric substrate 66. In the illustrated example of FIG. 3, the spacer layer 67 is provided along the peripheral portion of the first main surface 66a of the piezoelectric substrate 66. The spacer layer 67 is formed of a member having electrical insulation. More specifically, the spacer layer 67 is formed of, for example, epoxy resin or polyimide.

[0063] The cover member 65 is disposed on the spacer layer 67 so as to cover the plurality of IDT electrodes 62 with a gap therebetween. The cover member 65 is in a flat plate shape having the same outer shape size as that of the piezoelectric substrate 66 in a plan view from the thickness direction of the third electronic component 50C (that is, the thickness direction D1 of the mounting substrate 100). The cover member 65 is formed of a member having electrical insulation. More specifically, the cover member 65 is formed of, for example, epoxy resin or polyimide.

[0064] The cover member 65 has a first main surface 65a and a second main surface 65b that face each other in the thickness direction of the cover member 65 (i.e., the thickness direction D1 of the mounting substrate 51). The first main surface 65a is the main surface that faces the piezoelectric substrate 66. The second main surface 65b is the main surface that faces the mounting substrate 51. The cover member 65 has a plurality of through holes 65d that penetrate in the thickness direction of the cover member 65. The ends of the corresponding terminals 63 are inserted into the plurality of through holes 65d. The end faces 63a of each of the plurality of terminals 63 are exposed and arranged on the second main surface 65b of the cover member 65.

[0065] The third electronic component 50C has a housing space S1 that houses a plurality of IDT electrodes 62. The housing space S1 is surrounded by the piezoelectric substrate 66, the spacer layer 67, and the cover member 65. The housing space S1 contains gas. The gas is air, an inert gas (e.g., nitrogen gas), or the like.

[0066] The plurality of external electrodes 50a are portions that are electrically connected to the pad electrodes 52 of the mounting substrate 51. The plurality of external electrodes 50a correspond one-to-one with the plurality of terminals 63 and are provided on the end faces 63a of the corresponding terminals 63.

[0067] As described above, the third electronic component 50C has a top surface 50s and an outer peripheral surface 50t. The top surface 50s is constituted by the second main surface 66b of the piezoelectric substrate 66. The outer peripheral surface 50t is constituted by the outer peripheral surface 66c of the piezoelectric substrate 66, the outer peripheral surface 67c of the spacer layer 67, and the outer peripheral surface 65c of the cover member 65. When viewed in plan from the thickness direction (i.e., the thickness direction D1) of the third electronic component 50C, the shape of the third electronic component 50C is a polygon (e.g., a quadrilateral). Therefore, the outer peripheral surface 50t has a plurality (e.g., four) of side surfaces. The plurality of side surfaces include a first side surface 50u that faces the first electronic component 50A and a second side surface 50v that faces the second electronic component 50B.

[0068] As described above, the side shield electrode 55 is provided on at least a part of the outer peripheral surface 50t of the third electronic component 50C. In the illustrated example of FIG. 3, the side shield electrode 55 is provided on the first side surface 50u and the second side surface 50v of the third electronic component 50C.

[0069] (7) Arrangement of a plurality of electronic components As shown in FIG. 2, the first main surface 51a of the mounting substrate 51 has a first region R1, a second region R2, and a third region R3.

[0070] In the first region R1, transmission electronic components 50 other than the transmission filter 7 among the plurality of electronic components 50 are gathered and arranged. In the example of FIG. 2, only the first electronic component 50A is shown in the first region R1 as an example of the transmission electronic components 50 other than the transmission filter 7.

[0071] The second region R2 is a region away from the first region R1. In the second region R2, reception electronic components 50 other than the reception filter 8 among the plurality of electronic components 50 are gathered and arranged. In the illustrated example of FIG. 2, only the second electronic component 50B is shown in the second region R2 as an example of the reception electronic components 50 other than the reception filter 8.

[0072] The third region R3 is a region between the first region R1 and the second region R2. The third region R3 is, for example, a central region of the first main surface 51a of the mounting substrate 51. In the third region R3, surface acoustic wave filters (for example, the transmission filter 7 and the reception filter 8) among the plurality of electronic components 50 are gathered and arranged. In the illustrated example of FIG. 3, only the third electronic component 50C is shown in the third region R3 as an example of the surface acoustic wave filter.

[0073] Thus, among the plurality of electronic components 50, the transmission electronic components 50 other than the transmission filter 7 are gathered and arranged in the first region R1, and the reception electronic components 50 other than the reception filter 8 are gathered and arranged in the second region R2. Then, surface acoustic wave filters such as the transmission filter 7 and the reception filter 8 are gathered and arranged in the third region R3 between the first region R1 and the second region R2.

[0074] In Embodiment 1, by using the arrangement of such a plurality of electronic components 50, a side shield electrode 55 is provided on the outer peripheral surface 50t of the third electronic component 50C arranged in the third region R3. In this way, by arranging the side shield electrode 55 using the outer peripheral surface 50t of the third electronic component 50C arranged in the third region, there is no need to secure an arrangement space for arranging the side shield electrode 55 on the first main surface 51a of the mounting substrate 51. Therefore, even if the side shield electrode 55 is arranged on the mounting substrate 51, the high-frequency module 1 can be miniaturized.

[0075] (8) Shielding characteristics of the side shield electrode As shown in FIG. 2, the side shield electrode 55 is provided on at least a part of the outer peripheral surface 50t of the third electronic component 50C arranged between the first electronic component 50A and the second electronic component 50B. Thereby, the electromagnetic wave (signal) reaching from the first electronic component 50A toward the second electronic component 50B side is reflected by the side shield electrode 55. As a result, the electromagnetic wave reaching from the first electronic component 50A toward the second electronic component 50B side is reduced from reaching the second electronic component 50B. That is, the interference of the electromagnetic wave (signal) between the first electronic component 50A and the second electronic component 50B is reduced by the side shield electrode 55.

[0076] (9) Manufacturing method of the high-frequency module With reference to FIG. 2, an example of the manufacturing method of the high-frequency module 1 will be described. First, the side shield electrode 55 is provided on the outer peripheral surface 50t of the third electronic component 50C, for example, by sputtering. Then, a plurality of electronic components 50 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. Thereby, the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C provided with the side shield electrode 55 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. In this arranged state, each external electrode 50a of the plurality of electronic components 50 is connected by solder to a predetermined pad electrode 52 among the plurality of pad electrodes 52 arranged on the first main surface 51a of the mounting substrate 51.

[0077] Then, a resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the top surfaces of the plurality of electronic components 50. Then, the top surface of the resin member 53 is cut by a grinding device until the top surface 50s of the third electronic component 50C and the end portion 55a of the side shield electrode 55 are exposed. In this cut state, the end portion 55a of the side shield electrode 55 is arranged on the outer peripheral side of the top surface 50s of the third electronic component 50C. And the end portion 55a of the side shield electrode 55 is exposed from the resin member 53 together with the top surface 50s.

[0078] Then, an external shield electrode 54 is provided, for example, by sputtering so as to cover the outer surface 53s (top surface and outer peripheral surface) of the resin member 53, the top surface 50s of the third electronic component 50C, the end portion 55a of the side shield electrode 55, and the outer peripheral surface 51c of the mounting substrate 51. In the state where the external shield electrode 54 is provided in this way, the end portion 55a of the side shield electrode 55 is directly connected to the external shield electrode 54. Also, the ground layer 51g of the mounting substrate 51 is directly connected to the external shield electrode 54 on the outer peripheral surface 51c of the mounting substrate 51. In this way, the side shield electrode 55 is electrically connected to the ground layer 51g via the external shield electrode 54. In this way, the high-frequency module 1 is manufactured.

[0079] (10) Effect The high-frequency module 1 according to Embodiment 1 includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, a third electronic component 50C, and a side shield electrode 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is arranged on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is arranged on the first main surface 51a of the mounting substrate 51. The third electronic component 50C is arranged between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51. The side shield electrode 55 is provided on at least a part of the outer peripheral surface 50t of the third electronic component 50C. The mounting substrate 51 has a ground layer 51g. The side shield electrode 55 is connected to the ground layer 51g.

[0080] According to this configuration, the side shield electrode 55 provided on the outer peripheral surface 50t of the third electronic component 50C can reduce the interference of electromagnetic waves (signals) between the first electronic component 50A and the second electronic component 50B. Further, since the side shield electrode 55 is arranged using the outer peripheral surface 50t of the third electronic component 50C, compared with the case where a shield wall is arranged separately from the third electronic component 50C, there is no need to secure an arrangement space for arranging the shield wall on the first main surface 51a of the mounting substrate 51. As a result, the high-frequency module 1 can be miniaturized.

[0081] In addition, the high-frequency module 1 according to Embodiment 1 further includes a resin member 53 and an external shield electrode 54. The resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the first electronic component 50A, the second electronic component 50B, the third electronic component 50C, and the side shield electrode 55. The external shield electrode 54 is provided at least on the outer surface 53s of the resin member 53 and is connected to the ground layer 51g. The side shield electrode 55 is connected to the external shield electrode 54. According to this configuration, by using the external shield electrode 54, the side shield electrode 55 can be connected to the ground layer 51g of the mounting substrate 51 with a simple structure.

[0082] In the high-frequency module 1 according to Embodiment 1, the third electronic component 50C is an elastic wave filter (transmission filter 7 or reception filter 8) having a piezoelectric substrate. According to this configuration, since the elastic wave filter is used for transmission and reception, it is often arranged between the transmission area (the first area R1) and the reception area (the second area R2). By providing the side shield electrode 55 on the outer peripheral surface of such an elastic wave filter, the isolation between the transmission area and the reception area can be improved without significantly changing the arrangement of the electronic components 50 arranged on the mounting substrate 51.

[0083] Further, the communication device 30 according to Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high-frequency module 1 and processes high-frequency signals. According to this configuration, a communication device 30 that exhibits the effects of the high-frequency module 1 can be provided.

[0084] (11) Variation A variation of Embodiment 1 will be described. The variations described below can be implemented in combination.

[0085] (11-1) Variation 1 In Embodiment 1, the transmission electronic component 50, the reception electronic component 50, and the surface acoustic wave filters (transmission filter 7 and reception filter 8) are respectively divided and arranged in the first region R1, the second region R2, and the third region R3 of the mounting substrate 51, but they may be arranged without being divided. In this case, the electronic component 50 disposed between two electronic components 50 (first electronic component and second electronic component) to be electromagnetically shielded is defined as the third electronic component 50C, and a side surface shield electrode 55 is provided on at least a part of the outer peripheral surface of the third electronic component 50C. In this case, the third electronic component 50C is not limited to a surface acoustic wave filter, and may be an IC chip such as a switch, a low-noise amplifier, or a power amplifier, or a multilayer LC filter or the like which is an SMD (Surface Mount Device) component.

[0086] (11-2) Variation 2 In Embodiment 1, a single-sided mounting structure in which a plurality of electronic components 50 are arranged only on the first main surface 51a of the mounting substrate 51 is adopted. However, in Embodiment 1, a double-sided mounting structure in which a plurality of electronic components 50 are dispersedly arranged on both the first main surface 51a and the second main surface 51b of the mounting substrate 51 may be adopted.

[0087] (Embodiment 2) With reference to FIG. 4, the high-frequency module 1 according to Embodiment 2 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as in Embodiment 1, and the description thereof may be omitted, and only the parts different from Embodiment 1 may be described.

[0088] (1) Configuration As shown in FIG. 4, in the high-frequency module 1 according to the second embodiment, the high-frequency module 1 according to the first embodiment further includes a top surface shield electrode 60 and a connection member 61. The top surface shield electrode 60 is provided on at least a part of the top surface 50s of the third electronic component 50C. In the example of FIG. 4, the top surface shield electrode 60 is provided on the entire top surface 50s of the third electronic component 50C. The top surface shield electrode 60 is formed of a conductive member (for example, copper). The top surface shield electrode 60 is electrically connected to the side surface shield electrode 55 provided on the outer peripheral surface 50t of the third electronic component 50C. In the example of FIG. 4, the top surface shield electrode 60 is electrically connected to the side surface shield electrode 55 by being connected (contacted) to the end portion 55a of the side surface shield electrode 55.

[0089] The resin member 53 of the second embodiment further covers the top surface shield electrode 60 provided on the third electronic component 50C in the resin member 53 of the first embodiment. The resin member 53 has a through hole 53p. The through hole 53p is provided in the resin member 53 so as to penetrate between the top surface 53q of the resin member 53 and the top surface shield electrode 60. Thereby, the through hole 53p exposes a part 60p of the top surface shield electrode 60 from the top surface 53q of the resin member 53. Here, the top surface 53q is the main surface of the resin member 53 on the side opposite to the mounting substrate 51 side. The through hole 53p is provided in the resin member 53 so as to penetrate between the top surface 53q of the resin member 53 and the top surface shield electrode 60.

[0090] In the example of FIG. 4, the width W1 of the through hole 53p becomes smaller as it goes from the top surface 53q side of the resin member 53 toward the top surface shield electrode 60 side, but it may be constant as it goes from the top surface 53q of the resin member 53 toward the top surface shield electrode 60 side.

[0091] The external shield electrode 54 of Embodiment 2 is provided on the outer surface 53s (top surface 53q and outer peripheral surface 53r) of the resin member 53 and the outer peripheral surface 51c of the mounting substrate 51 so as to expose the through hole 53p in the external shield electrode 54 of Embodiment 1. The external shield electrode 54 has an opening 54p connected to the through hole 53p. The external shield electrode 54 is electrically connected to the ground layer 51g of the mounting substrate 51 in the same manner as in Embodiment 1.

[0092] The connection member 61 is a member that electrically connects the external shield electrode 54 and the top surface shield electrode 60. The connection member 61 is formed of a conductive member (for example, copper). The connection member 61 is formed of the same member as the external shield electrode 54. The connection member 61 is provided in a layered manner so as to cover the inner peripheral surface of the opening 54p of the external shield electrode 54, the inner peripheral surface of the through hole 53p, and a part 60p of the top surface shield electrode 60. That is, the connection member 61 is, for example, a concave conductor layer. The connection member 61 electrically connects the external shield electrode 54 and the top surface shield electrode 60.

[0093] The side surface shield electrode 55 of Embodiment 2 is electrically connected to the external shield electrode 54 via the connection member 61. Thereby, in Embodiment 2, even if the top surface 53q of the resin member 53 and the top surface 50s of the third electronic component 50C are not flush with each other, the connection member 61 can electrically connect the side surface shield electrode 55 and the external shield electrode 54.

[0094] The side surface shield electrode 55 of Embodiment 2 is electrically connected to the ground layer 51g of the mounting substrate 51 via the top surface shield electrode 60, the connection member 61, and the external shield electrode 54. Thereby, similar to the side surface shield electrode 55 of Embodiment 1, it is possible to reduce the interference of electromagnetic waves (signals) between the first electronic component 50A and the second electronic component 50B.

[0095] (2) Manufacturing method of high-frequency module Referring to FIG. 4, an example of a method for manufacturing the high-frequency module 1 according to Embodiment 1 will be described. First, a side shield electrode 55 and a top shield electrode 60 are provided on the outer peripheral surface 50t and the top surface 50s of the third electronic component 50C, respectively, for example, by sputtering. In this state, the top shield electrode 60 is electrically connected to the end 55a of the side shield electrode 55. The side shield electrode 55 and the top shield electrode 60 are integrally formed of the same material by being provided together in one manufacturing process.

[0096] Then, a plurality of electronic components 50 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. As a result, the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C provided with the side shield electrode 55 and the top shield electrode 60 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. In this arrangement state, each external electrode 50a of the plurality of electronic components 50 is connected to a predetermined pad electrode 52 among the plurality of pad electrodes 52 arranged on the first main surface 51a of the mounting substrate 51 by solder.

[0097] Then, a resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the top surface of each of the plurality of electronic components 50. Then, a through hole 53p is provided in the resin member 53 by a laser beam. By this through hole 53p, a part 60p of the top shield electrode 60 is exposed from the top surface 53q of the resin member 53.

[0098] Then, for example, by sputtering, an external shield electrode 54 is provided so as to cover the outer surface 53s (the top surface 53q and the outer peripheral surface 53r) of the resin member 53 and the outer peripheral surface 51c of the mounting substrate 51. Also, for example, by sputtering, a connecting member 61 is provided so as to cover the opening 54p of the external shield electrode 54, the inner peripheral surface of the through hole 53p, and a part 60p of the top shield electrode 60. The external shield electrode 54 and the connecting member 61 are integrally formed of the same material by being provided together in one process.

[0099] In the state where the external shield electrode 54 and the connection member 61 are provided as described above, the side shield electrode 55 is electrically connected to the external shield electrode 54 via the top shield electrode 60 and the connection member 61. And the side shield electrode 55 is electrically connected to the ground layer 51g of the mounting substrate 51 via the top shield electrode 60, the connection member 61, and the external shield electrode 54. In this way, the high-frequency module 1 is manufactured.

[0100] (3) Effect The high-frequency module 1 according to Embodiment 2 includes a top shield electrode 60 and a connection member 61. The top shield electrode 60 is provided on the main surface 50s on the side opposite to the side of the mounting substrate 51 in the third electronic component 50C and is connected to the side shield electrode 55). The connection member 61 connects the top shield electrode 60 and the external shield electrode 54. According to this configuration, even if the entire top surface 50s of the third electronic component 50C is not exposed from the resin member 53, the connection member 61 can connect the side shield electrode 55 and the external shield electrode 54.

[0101] (4) Modification A modification of Embodiment 2 will be described. The following modifications can be implemented in combination with each other. Also, the following modifications can be implemented in combination with Embodiment 1 and its modifications.

[0102] (4-1) Modification 1 In Embodiment 2, the connection member 61 is exemplified as a concave conductor layer. However, the connection member 61 is not limited to the concave conductor layer and may be a filling conductor that fills the inside of the through-hole 53p. When the connection member 61 is a filling conductor, the connection member 61 and the external shield electrode 54 are flush with each other (flush).

[0103] (4-2) Modification 2 In Embodiment 2, the connection member 61 is integrally formed of the same material as the external shield electrode 54, but may be formed separately from each other.

[0104] (4-3) Modification 3 In Embodiment 2, the connection member 61 is provided in a concave layer shape (see FIG. 4). However, as shown in FIG. 5, in Modification 3, the connection member 61A is constituted by a metal pin terminal.

[0105] The through-hole 53p of the resin member 53 in Modification 3 is, for example, cylindrical. The through-hole 53p penetrates between the top surface 53q of the resin member 53 and the top surface shield electrode 60, and exposes a part 60p of the top surface shield electrode 60 from the top surface 53q of the resin member 53, as in the case of Embodiment 2.

[0106] The connection member 61A in Modification 3 is a metal pin terminal that electrically connects the external shield electrode 54 and the top surface shield electrode 60. The connection member 61A has a columnar shape that is the same as and the same size as the through-hole 53p. A first end portion 61m, which is one end portion of the connection member 61A, is electrically connected to the back surface of the external shield electrode 54, and a second end portion 61n, which is the other end portion of the connection member 61A, is electrically connected to a part 60p of the top surface shield electrode 60.

[0107] The external shield electrode 54 in Modification 3 covers the outer surface 53s of the resin member 53, the first end portion 61m of the connection member 61A, and the outer peripheral surface 51c of the mounting substrate 51. The external shield electrode 54 is electrically connected to the first end portion 61m of the connection member 61A by covering the first end portion 61m of the connection member 61A. The external shield electrode 54 is electrically connected to the end portion of the ground layer 51g of the mounting substrate 51 by covering the outer peripheral surface 51c of the mounting substrate 51.

[0108] In Modification 3, the side surface shield electrode 55 is electrically connected to the ground layer 51g of the mounting substrate 51 via the top surface shield electrode 60, the connection member 61A, and the external shield electrode 54. Thereby, similarly to Embodiment 1, the interference of electromagnetic waves (signals) between the first electronic component 50A and the second electronic component 50B can be reduced by the side surface shield electrode 55.

[0109] With reference to FIG. 5, an example of a manufacturing method of the high-frequency module 1 according to Modification 3 will be described.

[0110] First, as in the case of Embodiment 2, a side surface shield electrode 55 and a top surface shield electrode 60 are provided on the outer peripheral surface 50t and the top surface 50s of the third electronic component 50C, respectively, for example, by sputtering.

[0111] Then, a plurality of electronic components 50 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. As a result, the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C provided with the side surface shield electrode 55 and the top surface shield electrode 60 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. In this arrangement state, each external electrode 50a of the plurality of electronic components 50 is connected by solder to a predetermined pad electrode 52 among the plurality of pad electrodes 52 arranged on the first main surface 51a of the mounting substrate 51.

[0112] Then, by connecting the second end portion 61n of the connection member 61A and a part 60p of the top surface shield electrode 60, for example, by solder, the connection member 61A is provided in a state of standing at a part 60p of the top surface shield electrode 60.

[0113] Then, a resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the top surface of each of the plurality of electronic components 50. At this time, the resin member 53 is provided so as to cover the outer peripheral surface of the connection member 61A and expose the first end portion 61m of the connection member 61A. In this state, the first end portion 61m of the connection member 61A and the top surface 53q of the resin member 53 are flush with each other (that is, coplanar). When the first end portion 61m of the connection member 61A protrudes from the top surface 53q of the resin member 53, the first end portion 61m of the connection member 61A is cut so that the first end portion 61m of the connection member 61A and the top surface 53q of the resin member 53 are flush with each other.

[0114] Then, for example, by sputtering, an external shield electrode 54 is provided so as to cover the outer surface 53s (top surface 53q and outer peripheral surface 53r) of the resin member 53, the first end portion 61m of the connection member 61A, and the outer peripheral surface 51c of the mounting substrate 51. In this way, the high-frequency module 1 is manufactured.

[0115] According to Modification 1, the connecting member 61A can be constituted by a metal pin terminal (that is, by a simple configuration).

[0116] Note that the connecting member 61A is provided so as to be directly connected to the top surface shield electrode 60, but it may be provided so as to be directly connected to the side surface shield electrode 55. In this case, the top surface shield electrode 60 may be omitted.

[0117] (4-4) Modification 4 As shown in FIG. 6, Modification 4 is a combination of Embodiment 2 and Modification 3 of Embodiment 2. More specifically, the high-frequency module 1 according to Modification 4 includes, for example, a connecting member 61 that is a filling member and a connecting member 61A that is a metal pin terminal.

[0118] The connecting member 61 is provided so as to electrically connect a part 60p of the top surface shield electrode 60 and the back surface of the external shield electrode 54. The first end portion 61m of the connecting member 61 is connected to the back surface of the external shield electrode 54, and the second end portion 60n of the connecting member 61 is connected to a part 60p of the top surface shield electrode 60.

[0119] The connecting member 61A is provided so as to electrically connect the side surface shield electrode 55 and the external shield electrode 54. The end portion 61v of the connecting member 61A is connected to the back surface of the external shield electrode 54, and a part 61w of the outer peripheral surface of the connecting member 61A is connected to the side surface shield electrode 55. The end portion 61v of the connecting member 61A and the top surface 53q of the resin member 53 are flush with each other (flush).

[0120] The resin member 53 of Modification 4 is provided on the first main surface 51a of the mounting substrate 51 so as to cover a plurality of electronic components 50, as in the case of Embodiment 2. The resin member 53 is provided so as to cover the outer peripheral surface of the connecting member 61 and expose the first end portion 61m of the connecting member 61. Further, the resin member 53 is provided so as to expose the end portion 61v of the connecting member 61A and cover the outer surface of the connecting member 61A.

[0121] The external shield electrode 54 of Modification 4 is provided so as to cover the top surface 53q and the outer peripheral surface 53r of the resin member 53, the first end portion 61m of the connection member 61, the end portion 61v of the connection member 61A, and the outer peripheral surface 51c of the mounting substrate 51.

[0122] In Modification 4, the side shield electrode 55 is connected to the external shield electrode 54 via the connection member 61A and via the top surface shield electrode 60 and the connection member 61. And the side shield electrode 55 is further electrically connected to the ground layer 51g of the mounting substrate 51 via the external shield electrode 54.

[0123] According to Modification 4, the effects of both Embodiment 2 and Modification 1 are achieved.

[0124] (Embodiment 3) With reference to FIG. 7, the high-frequency module 1 according to Embodiment 3 will be described. In the following description, the same components as those in Embodiment 2 are denoted by the same reference numerals as in Embodiment 2, and the description thereof may be omitted, and only the parts different from those in Embodiment 2 may be described.

[0125] (1) Configuration As shown in FIG. 7, the high-frequency module 1 according to Embodiment 3 includes a bonding wire 70 instead of the connection member 61 in the high-frequency module 1 according to Embodiment 2.

[0126] The bonding wire 70 has a first end portion 70a, a second end portion 70b, and a predetermined portion 70c. The first end portion 70a is one end portion of the bonding wire 70. The second end portion 70b is the other end portion of the bonding wire 70 and is an end portion different from the first end portion 70a. The predetermined portion 70c is, for example, a part (intermediate portion) between the first end portion 70a and the second end portion 70b in the bonding wire 70.

[0127] The first end portion 70a of the bonding wire 70 is electrically connected to the top surface shield electrode 60, and a predetermined portion 70c of the bonding wire 70 is electrically connected to the external shield electrode 54. More specifically, the bonding wire 70 is curved in a U shape. The first end portion 70a and the second end portion 70b of the bonding wire 70 are electrically connected to the top surface shield electrode 60. The predetermined portion 70c of the bonding wire 70 is a curved portion curved in a U shape. The predetermined portion 70c of the bonding wire 70 is electrically connected to the external shield electrode 54.

[0128] The resin member 53 of Embodiment 3 is provided on the first main surface 51a of the mounting substrate 51 so as to cover a plurality of electronic components 50. The resin member 53 covers the side surface shield electrode 55 and the top surface shield electrode 60 provided on the third electronic component 50C. The resin member 53 exposes a predetermined portion 70c of the bonding wire 70 and covers portions other than the predetermined portion 70c.

[0129] The external shield electrode 54 of Embodiment 3 is provided so as to cover the outer surface 53s of the resin member 53, the predetermined portion 70c of the bonding wire 70, and the outer peripheral surface 51c of the mounting substrate 51. The external shield electrode 54 is electrically connected to the predetermined portion 70c of the bonding wire 70 by covering (i.e., contacting) the predetermined portion 70c of the bonding wire 70.

[0130] In Embodiment 3, the side surface shield electrode 55 is electrically connected to the ground layer 51g of the mounting substrate 51 via the top surface shield electrode 60, the bonding wire 70, and the external shield electrode 54. Thereby, similarly to Embodiment 1, the side surface shield electrode 55 can reduce the interference of electromagnetic waves (signals) between the first electronic component 50A and the second electronic component 50B.

[0131] (2) Manufacturing method Next, with reference to FIG. 7, an example of a manufacturing method of the high-frequency module 1 according to Embodiment 3 will be described.

[0132] First, a plurality of electronic components 50 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. As a result, the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C provided with the side shield electrode 55 and the top shield electrode 60 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. In this arrangement state, the external electrodes 50a of each of the plurality of electronic components 50 are connected by solder to predetermined pad electrodes 52 among the plurality of pad electrodes 52 arranged on the first main surface 51a of the mounting substrate 51.

[0133] Then, the first end 70a and the second end 70b of the bonding wire 70 are connected to the top shield electrode 60 by, for example, solder. In this connection state, the bonding wire 70 stands in an inverted U shape at the top shield electrode 60. Note that the bonding wire 70 may be directly bonded to the top shield electrode 60 of the third electronic component 50C.

[0134] Then, a resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the top surfaces of each of the plurality of electronic components 50. At this time, the resin member 53 is provided so as to expose a predetermined portion 70c of the bonding wire 70 and cover the portions other than the predetermined portion 70c. More specifically, after the resin member 53 is provided so as to cover the entire bonding wire 70, the top surface side of the resin member 53 is cut by a cutting device until the predetermined portion 70c of the bonding wire 70 is exposed.

[0135] Then, for example, by sputtering, an external shield electrode 54 is provided so as to cover the outer surface 53s (top surface 53q and outer peripheral surface 53r) of the resin member 53, the predetermined portion 70c of the bonding wire 70, and the outer peripheral surface 51c of the mounting substrate 51. In this way, the high-frequency module 1 is manufactured.

[0136] (3) Effects The high-frequency module 1 according to Embodiment 3 includes a top surface shield electrode 60 and bonding wires 70. The top surface shield electrode 60 is provided on the main surface 50s of the third electronic component 50C on the side opposite to the side of the mounting substrate 51, and is connected to the side surface shield electrode 55. The bonding wire 70 has a first end portion 70a and a predetermined portion 70c. The predetermined portion 70c is a portion different from the first end portion 70a. The first end portion 70a of the bonding wire 70 is connected to the top surface shield electrode 60, and the predetermined portion 70c of the bonding wire 70 is connected to the external shield electrode 54.

[0137] According to this configuration, even if the entire top surface 50s of the third electronic component 50C is not exposed from the resin member 53, the side surface shield electrode 55 and the external shield electrode 54 can be electrically connected by the bonding wire 70.

[0138] (4) Modification A modification of Embodiment 3 will be described.

[0139] (4-1) Modification 1 In Embodiment 3, the bonding wire 70 may be electrically connected to the external shield electrode 54 in a state of being divided at the predetermined portion 70c. In this case, the bonding wire 70 is constituted by, for example, a pair (two) of divided bonding wires (divided wires). In this case, the divided end portions of each of the pair of divided wires are electrically connected to the external shield electrode 54 in a state of being adjacent to each other on the external shield electrode 54. The divided end portion is an end portion at the divided portion. One of the divided wires has a first end portion 70a and a divided end portion, and the other divided wire has a second end portion 70b and a divided end portion. In a plan view from the thickness direction D1 of the mounting substrate 51, the interval between the divided end portion of one divided wire and the divided end portion of the other divided wire is shorter than the interval between the first end portion 70a and the second end portion 70b.

[0140] (Embodiment 4) Referring to FIG. 8, the high-frequency module 1 according to Embodiment 4 will be described. In the following description, the same components as those in Embodiment 3 are denoted by the same reference numerals as in Embodiment 3, and the description thereof may be omitted, and only the parts different from those in Embodiment 3 may be described.

[0141] (1) Configuration As shown in FIG. 8, in the high-frequency module 1 according to Embodiment 4, compared with the high-frequency module 1 according to Embodiment 3, the second end portion 70b of the bonding wire 70 is electrically connected to a conductive member 80 provided on the first main surface 51a of the mounting substrate 51, except for this difference, it is configured in the same manner.

[0142] The conductive member 80 is composed of a member having conductivity. The conductive member 80 is electrically connected to the ground layer 51g of the mounting substrate 51. The conductive member 80 is, for example, a pad electrode 52p. The pad electrode 52p is provided on the first main surface 51a of the mounting substrate 51 and is electrically connected to the ground layer 51g of the mounting substrate 51.

[0143] In Embodiment 4, the first end portion 70a of the bonding wire 70 is electrically connected to the top surface shield electrode 60. The second end portion 70b of the bonding wire 70 is electrically connected to the conductive member 80 (pad electrode 52p). A predetermined portion 70c of the bonding wire 70 is electrically connected to the external shield electrode 54. Thereby, the side surface shield electrode 55 is electrically connected to the ground layer 51g through the top surface shield electrode 60, the bonding wire 70, and the external shield electrode 54. Also, the side surface shield electrode 55 is electrically connected to the ground layer 51g through the top surface shield electrode 60, the bonding wire 70, and the conductive member 80. That is, the side surface shield electrode 55 is electrically connected to the ground layer 51g by two conductive paths. For this reason, the discharge performance from the side surface shield electrode 55 to the ground layer 51g is improved, and as a result, the shielding performance of the side surface shield electrode 55 is improved. Thereby, the side surface shield electrode 55 can further reduce the electromagnetic wave (signal) interference between the first electronic component 50A and the second electronic component 50B.

[0144] (2) Effect The high-frequency module 1 according to Embodiment 4 further includes a conductive member 80. The conductive member 80 is provided on the first main surface 51a of the mounting substrate 51 and is connected to the ground layer 51g. The bonding wire 70 further has a second end 70b different from the first end 70a. The second end 70b of the bonding wire 70 is connected to the conductive member 80.

[0145] According to this configuration, two paths can be secured as paths for connecting the side shield electrode 55 to the ground layer 51g: a first path via the external shield electrode 54 and a second path via the conductive member 80. Thereby, the electromagnetic shielding property of the side shield electrode 55 can be improved.

[0146] Further, in the high-frequency module 1 according to the fourth embodiment, the conductive member 80 is a pad electrode 52p. The pad electrode 52p is disposed on the first main surface 51a of the mounting substrate 51. According to this configuration, since the pad electrode 52p (existing conductive member 80) disposed on the first main surface 51a of the mounting substrate 51 can be used as the conductive member 80, an increase in the size of the high-frequency module 1 can be avoided.

[0147] (3) Modification A modification of Embodiment 4 will be described. The modifications described below can be implemented in combination. Further, the following modifications can be implemented in combination with Embodiments 1 to 3 and their modifications.

[0148] (3-1) Modification 1 In Modification 1, another specific example of the conductive member 80 of Embodiment 4 will be described.

[0149] As shown in FIG. 9, the conductive member 80 of Modification 1 is an external electrode 81p of a predetermined electronic component 81 disposed on the first main surface 51a of the mounting substrate 51.

[0150] The predetermined electronic component 81 is different from the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C. The predetermined electronic component 81 is, for example, a capacitor, an inductor, or the like. The predetermined electronic component 81 has a plurality (two in the example of FIG. 9) of external electrodes 81a. The plurality of external electrodes 81a are connected to a plurality of pad electrodes 52 provided on the first main surface 51a of the mounting substrate 51 by, for example, solder. The external electrode 81p is a ground electrode electrically connected to the ground layer 51g of the mounting substrate 51 among the plurality of external electrodes 81a. That is, the external electrode 81p is electrically connected to the ground layer 51g of the mounting substrate 51 via the pad electrode 52 and the via electrode of the mounting substrate 51.

[0151] The second end portion 70b of the bonding wire 70 in Modification 1 is electrically connected to the ground layer 51g of the mounting substrate 51 via the external electrode 81p which is the conductive member 80.

[0152] In Modification 1, the conductive member 80 is the external electrode 81p. The external electrode 81p is an external electrode of a predetermined electronic component 81 disposed on the first main surface 51a of the mounting substrate 51. According to this configuration, the second end portion 70b of the bonding wire 70 can be connected to the ground layer 51g by using the external electrode 81p of the predetermined electronic component 81 disposed on the first main surface 51a of the mounting substrate 51.

[0153] (3-2) Modification 2 In Modification 1, still another specific example of the conductive member 80 of Embodiment 4 will be described.

[0154] As shown in FIG. 10, the conductive member 80 in Modification 2 is a metal wall 82 for electromagnetic shielding provided on the first main surface 51a of the mounting substrate 51.

[0155] The metal wall 82 is a wall portion formed of a conductive metal. The metal wall 82 is electrically connected to the ground layer 51g of the mounting substrate 51 via the via electrode of the mounting substrate 51. The metal wall 82 is disposed between two electronic components 50 and is a member for shielding electromagnetic waves that jump between the two electronic components 50. In the example of FIG. 10, the metal wall 82 is disposed between the first electronic component 50A and the third electronic component 50C. In the example of FIG. 10, the top surface 82s of the metal wall 82 does not contact the external shield electrode 54, but may contact the external shield electrode 54. Note that the top surface 82s is an end surface of the metal wall 82 on the side opposite to the mounting substrate 51 side.

[0156] The second end portion 70b of the bonding wire 70 is electrically connected to, for example, the top surface 82s of the metal wall 82 which is a conductive member 80. Note that the connection destination of the second end portion 70b is not limited to the top surface 82s and may be connected to anywhere on the metal wall 82. The second end portion 70b of the bonding wire 70 is electrically connected to the ground layer 51g of the mounting substrate 51 via the metal wall 82.

[0157] In Modification 2, the conductive member 80 is the shield metal wall 82. The shield metal wall 82 is provided on the first main surface 51a of the mounting substrate 51. According to this configuration, the second end portion 70b of the bonding wire 70 can be connected to the ground layer 51g by using the metal wall 82 provided on the first main surface 51a of the mounting substrate 51.

[0158] (Embodiment 5) With reference to FIG. 11, the high-frequency module 1 according to Embodiment 5 will be described. In the following description, the same components as those in Embodiment 4 are denoted by the same reference numerals as in Embodiment 4 and the description thereof may be omitted, and only the portions different from Embodiment 4 may be described. In Embodiment 5, the side shield electrode 55 in Embodiment 4 is described as the first side shield electrode 55, and the top shield electrode 60 in Embodiment 4 is described as the first top shield electrode 60.

[0159] (1) Configuration As shown in FIG. 11, the high-frequency module 1 according to Embodiment 5 further includes a fourth electronic component 50D, a second side shield electrode 90, a second top surface shield electrode 91, and at least one (six in the example of FIG. 10) bonding wire 93 in the high-frequency module 1 according to Embodiment 4.

[0160] The third electronic component 50C of Embodiment 5 is disposed between the first electronic component 50A and the second electronic component 50B, similarly to the case of Embodiment 4. Further, the third electronic component 50C of Embodiment 5 includes a first side shield electrode 55 and a first top surface shield electrode 60, similarly to the case of Embodiment 4. The first side shield electrode 55 is provided on the outer peripheral surface of the third electronic component 50C. The first top surface shield electrode 60 is provided on the top surface of the third electronic component 50C and is electrically connected to the first side shield electrode 55.

[0161] The fourth electronic component 50D is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51 and is adjacent to the third electronic component 50C. Here, "A is adjacent to B" means that no other electronic component is disposed between A and B. More specifically, the fourth electronic component 50D is arranged side by side in a direction (for example, a direction perpendicular to the left-right direction of the paper surface in FIG. 11) intersecting the direction in which the first electronic component 50A and the second electronic component 50B are arranged, that is, the facing direction (left-right direction of the paper surface in FIG. 11) of the first electronic component 50A and the second electronic component 50B, in a plan view from the thickness direction of the mounting substrate 51.

[0162] The second side shield electrode 90 is provided on at least one side surface (the entire outer peripheral surface in the example of FIG. 11) of the fourth electronic component 50D. The second side shield electrode 90 is provided on the outer peripheral surface of the fourth electronic component 50D. The second top surface shield electrode 91 is provided on at least a part (the entire top surface in the example of FIG. 11) of the top surface of the fourth electronic component 50D. The second top surface shield electrode 91 is provided on at least a part (the entire top surface in the example of FIG. 11) of the top surface of the fourth electronic component 50D and is electrically connected to the second side shield electrode 90.

[0163] The bonding wire 93 has a first end portion 93a and a second end portion 93b that are different from each other. The first end portion 93a of the bonding wire 93 is electrically connected to the first top surface shield electrode 60 or the second top surface shield electrode 91. The second end portion 93b of the bonding wire 93 is electrically connected to the pad electrode 52p. The pad electrode 52p is a pad electrode disposed between the third electronic component 50C and the fourth electronic component 50D on the first main surface 51a of the mounting substrate 51. The pad electrode 52p is electrically connected to the ground layer of the mounting substrate 51.

[0164] The plurality of bonding wires 93 includes a first predetermined number (for example, three) of bonding wires 93A and a second predetermined number (for example, three) of bonding wires 93B. The first end portion 93a of each bonding wire 93A is electrically connected to the first top surface shield electrode 60. The second end portion 93b of each bonding wire 93A is connected to the pad electrode 52p. The first end portion 93a of each bonding wire 93B is electrically connected to the second top surface shield electrode 91. The second end portion 93b of each bonding wire 93B is connected to the pad electrode 52p.

[0165] The entire bonding wire 93 is covered with a resin member 53 (see FIG. 8). Accordingly, the bonding wire 93 is not in contact with the external shield electrode 54. Note that the bonding wire 93 may be in contact with the external shield electrode 54.

[0166] The bonding wire 93 is disposed between the third electronic component 50C and the fourth electronic component 50D. The first end 93a of the bonding wire 93 is electrically connected to the ground layer of the mounting substrate 51 via the first top surface shield electrode 60 and the first side surface shield electrode 55, or is electrically connected to the ground layer of the mounting substrate 51 via the second top surface shield electrode 91 and the second side surface shield electrode 90. Further, the second end 93b of the bonding wire 93 is electrically connected to the ground layer of the mounting substrate 51 via the pad electrode 52p. Therefore, the bonding wire 93 has a function of shielding the electromagnetic wave K1 passing through the gap M1 between the first electronic component 50A and the second electronic component 50B. Thereby, the electromagnetic wave K1 radiated from the first electronic component 50A and passing through the gap M1 has its passage suppressed by the bonding wire 93. As a result, the interference of the electromagnetic wave K1 between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0167] (2) Effect The high-frequency module 1 according to Embodiment 5 includes a first top surface shield electrode 60, a fourth electronic component 50D, a second side surface shield electrode 90, a second top surface shield electrode 91, and a bonding wire 93. The first top surface shield electrode 60 is provided on the main surface 50s of the third electronic component 50C on the side opposite to the mounting substrate 51 side, and is connected to the first side surface shield electrode 55 which is the side surface shield electrode 55. The fourth electronic component 50D is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51, and is adjacent to the third electronic component 50C. The second side surface shield electrode 90 is provided on at least one side surface of the fourth electronic component 50D, and is connected to the ground layer 51g. The second top surface shield electrode 91 is provided on the main surface 50s of the fourth electronic component 50D on the side opposite to the mounting substrate 51 side, and is connected to the second side surface shield electrode 90. The bonding wire 93 has a first end portion 93a and a second end portion 93b. The first end portion 93a of the bonding wire 93 is connected to the first top surface shield electrode 60 or the second top surface shield electrode 91. The second end portion 93b of the bonding wire 93 is connected to a pad electrode 52p provided between the third electronic component 50C and the fourth electronic component 50D on the first main surface 51a of the mounting substrate 51.

[0168] According to this configuration, the gap M1 between the third electronic component 50C and the fourth electronic component 50D can be electromagnetically shielded by the bonding wire 93. As a result, the electromagnetic wave interference between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0169] (Embodiment 6) With reference to FIG. 12, the high-frequency module 1 according to Embodiment 6 will be described. In the following description, the same components as those in Embodiment 5 are denoted by the same reference numerals as in the case of Embodiment 1, and the description thereof may be omitted, and only the portions different from Embodiment 5 may be described.

[0170] (1) Configuration As shown in FIG. 12, similar to the case of Embodiment 5, the high-frequency module 1 according to Embodiment 6 includes a fourth electronic component 50D, a second side shield electrode 90, a second top surface shield electrode 91, and at least one (three in the example of FIG. 12) bonding wire 94.

[0171] The third electronic component 50C and the fourth electronic component 50D of Embodiment 6 are configured and arranged in the same manner as the third electronic component 50C and the fourth electronic component 50D of Embodiment 5.

[0172] The bonding wire 94 has a first end portion 94a and a second end portion 94b that are different from each other. The first end portion 94a of the bonding wire 94 is electrically connected to the first top surface shield electrode 60, and the second end portion 93b of the bonding wire 94 is electrically connected to the second top surface shield electrode 91. That is, the bonding wire 94 is provided across between the first top surface shield electrode 60 and the second top surface shield electrode 91.

[0173] The entire bonding wire 94 is covered with a resin member 53 (see FIG. 8). Therefore, the bonding wire 94 is not in contact with the external shield electrode 54.

[0174] The bonding wire 94 is provided across between the third electronic component 50C and the fourth electronic component 50D. The first end portion 94a of the bonding wire 94 is electrically connected to the ground layer of the mounting substrate 51 via the first top surface shield electrode 60 and the first side shield electrode 55. The second end portion 94b of the bonding wire 94 is electrically connected to the ground layer of the mounting substrate 51 via the second top surface shield electrode 91 and the second side shield electrode 90. Therefore, the bonding wire 94 has a function of shielding the electromagnetic wave K1 passing through the gap M1 between the first electronic component 50A and the second electronic component 50B. Thereby, the electromagnetic wave K1 radiated from the first electronic component 50A and passing through the gap M1 is suppressed from passing by the bonding wire 94. As a result, the interference of the electromagnetic wave K1 between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0175] (2) Effect The high-frequency module 1 according to Embodiment 6 includes a first top surface shield electrode 60, a fourth electronic component 50D, a second side surface shield electrode 90, a second top surface shield electrode 91, and a bonding wire 94. The first top surface shield electrode 60 is provided on the main surface 50s of the third electronic component 50C on the side opposite to the mounting substrate 51 side, and is connected to the first side surface shield electrode 55 which is the side surface shield electrode 55. The fourth electronic component 50D is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51, and is adjacent to the third electronic component 50C. The second side surface shield electrode 90 is provided on at least one of the side surfaces 50u, 50v of the fourth electronic component 50D, and is connected to the ground layer 51g. The second top surface shield electrode 91 is provided on the main surface 50s of the fourth electronic component 50D on the side opposite to the mounting substrate 51 side, and is connected to the second side surface shield electrode 90. The bonding wire 94 has a first end portion 94a and a second end portion 94b. The first end portion 94a of the bonding wire 94 is connected to the first top surface shield electrode 60. The second end portion 94b of the bonding wire 94 is connected to the second top surface shield electrode 91.

[0176] According to this configuration, the gap M1 between the third electronic component 50C and the fourth electronic component 50D can be electromagnetically shielded by the bonding wire 94. As a result, the electromagnetic wave interference between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0177] (3) Modification Referring to FIG. 13, a modification of Embodiment 6 will be described. The modifications described below can be implemented in combination with Embodiments 1 to 5 and their modifications.

[0178] (3-1) Modification 1 (3-1-1) Configuration As shown in FIG. 13, the high-frequency module 1 according to Modification 1 further includes at least one bonding wire 95 in the high-frequency module 1 according to Embodiment 6.

[0179] The external shield electrode 54 has a plurality (four in the example of FIG. 13) of side portions 54u. The resin member 53 has a polygonal (quadrilateral in the example of FIG. 13) shape in a plan view from the thickness direction of the mounting substrate 51. That is, the outer peripheral surface of the resin member 53 has a plurality (four in the example of FIG. 13) of side surfaces 53u. The plurality of side portions 54u of the external shield electrode 54 correspond one-to-one to the plurality of side surfaces 53u of the resin member 53 and are provided on the corresponding side surfaces 53u.

[0180] The third electronic component 50C is disposed adjacent to one side portion 54v among the plurality of side portions 54u of the external shield electrode 54.

[0181] The bonding wire 95 has a first end portion 95a and a second end portion 95b that are different from each other. The first end portion 95a of the bonding wire 95 is electrically connected to the first top surface shield electrode 60 of the third electronic component 50C, and the second end portion 95b of the bonding wire 95 is electrically connected to one side portion 54v of the external shield electrode 54.

[0182] The entire bonding wire 95 is covered with the resin member 53. Therefore, the bonding wire 95 is not in contact with the external shield electrode 54.

[0183] Bonding wire 95 is provided across between the first top surface shield electrode 60 of the third electronic component 50C and one side surface portion 54v of the external shield electrode 54. The first end portion 95a of the bonding wire 95 is electrically connected to the ground layer of the mounting substrate 51 via the first top surface shield electrode 60 and the first side surface shield electrode 55. The second end portion 95b of the bonding wire 95 is electrically connected to the ground layer of the mounting substrate 51 via one side surface portion 54v (i.e., the external shield electrode 54). Therefore, the bonding wire 95 has a function of shielding the electromagnetic wave K2 radiated from the first electronic component 50A and passing through the gap M2 between the first electronic component 50A and one side surface portion 54v. Thereby, the passage of the electromagnetic wave K2 radiated from the first electronic component 50A and passing through the gap M2 is suppressed by the bonding wire 95. As a result, the electromagnetic wave interference between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0184] (3-1-2) Effect The high-frequency module 1 according to the first modification includes a resin member 53, an external shield electrode 54, a top surface shield electrode 60, and a bonding wire 95. The resin member 53 is provided on the first main surface 51a so as to cover the first electronic component 50A, the second electronic component 50B, the third electronic component 50C, and the side surface shield electrode 55. The external shield electrode 54 is provided at least on the outer surface 53s of the resin member 53 and is connected to the ground layer 51g. The top surface shield electrode 60 is provided on the main surface 50s of the third electronic component 50C opposite to the side of the mounting substrate 51 and is connected to the side surface shield electrode 55. The bonding wire 95 has a first end portion 95a and a second end portion 95b. The external shield electrode 54 has a plurality of side surface portions 54u. The plurality of side surface portions 54u are provided on the plurality of side surfaces 53u of the resin member 53. The third electronic component 50C is adjacent to one side surface portion 54v among the plurality of side surface portions 54u. The first end portion 95a of the bonding wire 95 is connected to the top surface shield electrode 60 provided on the third electronic component 50C. The second end portion 95b of the bonding wire 95 is electrically connected to one side surface portion 54v of the external shield electrode 54.

[0185] According to this configuration, the bonding wire 95 can electromagnetically shield the gap M2 between the side surface portion 54v adjacent to the third electronic component 50C among the plurality of side surface portions 54u of the external shield electrode 54 and the third electronic component 50C. As a result, the electromagnetic wave interference between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0186] (Embodiment 7) With reference to FIG. 14, the high-frequency module 1 according to Embodiment 7 will be described. In the following description, the same components as those in Embodiment 5 are denoted by the same reference numerals as in the case of Embodiment 1, and the description thereof may be omitted, and only the portions different from Embodiment 5 may be described.

[0187] (1) Configuration As shown in FIG. 14, the high-frequency module 1 according to Embodiment 7 includes a fourth electronic component 50D, a second side shield electrode 90, a second top shield electrode 91, and at least one (three in the example of FIG. 14) bonding wire 96, as in the case of Embodiment 5.

[0188] The third electronic component 50C and the fourth electronic component 50D in Embodiment 7 are configured and arranged in the same manner as the third electronic component 50C and the fourth electronic component 50D in Embodiment 5.

[0189] The bonding wire 96 is disposed between the third electronic component 50C and the fourth electronic component 50D on the first main surface 51a of the mounting substrate 51. The bonding wire 96 has different first end portions 96a and second end portions 96b. The first end portion 96a and the second end portion 96b of the bonding wire 96 are electrically connected to different pad electrodes 52p. The pad electrode 52p is a pad electrode 52 disposed between the third electronic component 50C and the fourth electronic component 50D on the first main surface 51a of the mounting substrate 51, and is electrically connected to the ground layer of the mounting substrate 51.

[0190] The entire bonding wire 96 is covered by the resin member 53. Therefore, the bonding wire 96 is not in contact with the external shield electrode 54. Note that a part of the bonding wire 96 may be in contact with the external shield electrode 54.

[0191] The bonding wire 96 is provided on the first main surface 51a of the mounting substrate 51 in a state of being curved in an inverted U shape between the third electronic component 50C and the fourth electronic component 50D. The first end 96a and the second end 96b of the bonding wire 96 are each electrically connected to the ground layer of the mounting substrate 51 via the pad electrode 52p. Therefore, the bonding wire 96 has a function of shielding the electromagnetic wave K1 radiated from the first electronic component 50A and passing through the gap M1 between the first electronic component 50A and the second electronic component 50B. Thereby, the electromagnetic wave K1 radiated from the first electronic component 50A and passing through the gap M1 is suppressed from passing by the bonding wire 96. As a result, the electromagnetic wave interference between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0192] (2) Effect The high-frequency module 1 according to Embodiment 7 includes the fourth electronic component 50D and the bonding wire 96. The fourth electronic component 50D is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51 and is adjacent to the third electronic component 50C. The bonding wire 96 is provided between the third electronic component 50C and the fourth electronic component 50D on the first main surface 51a of the mounting substrate 51. Both ends (the first end 96a and the second end 96b) of the bonding wire 96 are connected to the pad electrode 52p. The pad electrode 52p is provided between the third electronic component 50C and the fourth electronic component 50D on the first main surface 51a of the mounting substrate 51 and is connected to the ground layer 51g.

[0193] According to this configuration, the gap M1 between the third electronic component 50C and the fourth electronic component 50D can be electromagnetically shielded by the bonding wire 96. As a result, the electromagnetic wave interference between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0194] (Embodiment 8) With reference to FIG. 15, the high-frequency module 1 according to Embodiment 8 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as in Embodiment 1, and the description thereof may be omitted, and only the parts different from Embodiment 1 may be described.

[0195] (1) Configuration The high-frequency module 1 according to Embodiment 8 is configured in the same manner as the high-frequency module 1 according to Embodiment 1, except that the external shield electrode 54 is in direct contact with the main surface 55m of the side shield electrode 55. Hereinafter, Embodiment 8 will be described in detail.

[0196] In Embodiment 8, a side shield electrode 55 is provided on the outer peripheral surface 50t of the third electronic component 50C in the same manner as in the case of Embodiment 1.

[0197] In Embodiment 8, the resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the plurality of electronic components 50 in the same manner as in the case of Embodiment 1. Thereby, the resin member 53 covers the top surface 50s of the third electronic component 50C.

[0198] The resin member 53 has a through hole 53h. The side shield electrode 55 has a main surface 55m. The main surface 55m is the main surface on the outer side in the thickness direction of the side shield electrode 55 (the side opposite to the outer peripheral surface 50t of the third electronic component 50C). The through hole 53h is provided in the resin member 53 so as to expose a predetermined region 55n of the main surface 55m of the side shield electrode 55 from the top surface 53q of the resin member 53. That is, the through hole 53h is provided in the resin member 53 so as to penetrate between the top surface 53q of the resin member 53 and the predetermined region 55n of the side shield electrode 55. The predetermined region 55n of the side shield electrode 55 may be the entire main surface 55m of the side shield electrode 55 or a partial region of the main surface 55m. In the example of FIG. 15, the predetermined region 55n is a part (for example, an edge portion) on the side of the top surface 50s of the third electronic component 50C in the main surface 55m.

[0199] More specifically, in the example of FIG. 15, the side shield electrode 55 is provided on each of the first side surface 50u and the second side surface 50v of the outer peripheral surface 50t of the third electronic component 50C. The first side surface 50u and the second side surface 50v are the side surfaces facing the first electronic component 50A or the second electronic component 50B among a plurality (for example, four) of side surfaces constituting the outer peripheral surface 50t of the third electronic component 50C. The through hole 53h exposes the predetermined region 55n of the side shield electrode 55 provided on each of the first side surface 50u and the second side surface 50v from the top surface 53q of the resin member 53. Further, the through hole 53h exposes the entire width W3 of the top surface 50s of the third electronic component 50C from the top surface 53q of the resin member 53. Here, the width W3 is the width between the first side surface 50u and the second side surface 50v on the top surface 50s of the third electronic component 50C.

[0200] Note that the through hole 53h may expose only the entire or a part of the main surface 55m of the side shield electrode 55 in the direction perpendicular to the paper surface of FIG. 15. Similarly, the through hole 53h may expose only the entire or a part of the top surface 50s of the third electronic component 50C in the direction perpendicular to the paper surface of FIG. 15.

[0201] The external shield electrode 54 covers the outer surface 53s of the resin member 53 and the outer peripheral surface 51c of the mounting substrate 51, as in the case of the first embodiment. Further, the external shield electrode 54 covers the inner peripheral surface of the through-hole 53h, a predetermined region 55n of each side surface shield electrode 55, and the entire width W3 of the top surface 50s of the third electronic component 50C. The external shield electrode 54 is electrically connected to each side surface shield electrode 55 by covering (i.e., contacting) the predetermined region 55n of each side surface shield electrode 55. Thereby, the contact area between the external shield electrode 54 and the side surface shield electrode 55 can be increased, and the electromagnetic shielding property of the side surface shield electrode 55 can be improved.

[0202] (2) Effect In the high-frequency module 1 according to the eighth embodiment, the resin member 53 has a through-hole 53h. The through-hole 53h exposes a predetermined region 55n of the main surface 55m of the side surface shield electrode 55 of the third electronic component 50C. The external shield electrode 54 further covers the inner peripheral surface of the through-hole 53h and the predetermined region 55n of the side surface shield electrode 55. The external shield electrode 54 is electrically connected to the side surface shield electrode 55 by contacting the predetermined region 55n.

[0203] According to this configuration, since the external shield electrode 54 directly contacts the predetermined region 55n of the main surface 55m of the side surface shield electrode 55, the contact area with the side surface shield electrode 55 can be increased. Thereby, the conductivity between the side surface shield electrode 55 and the external shield electrode 54 can be improved, and the shielding performance of the side surface shield electrode 55 can be improved.

[0204] (Aspect) The following aspects are disclosed in this specification.

[0205] The high-frequency module (1) of the first aspect includes a mounting substrate (51), a first electronic component (50A), a second electronic component (50B), a third electronic component (50C), and a side shield electrode (55). The mounting substrate (51) has a first main surface (51a) and a second main surface (51b) facing each other. The first electronic component (50A) is disposed on the first main surface (51a) of the mounting substrate (51). The second electronic component (50B) is disposed on the first main surface (51a) of the mounting substrate (51). The third electronic component (50C) is disposed between the first electronic component (50A) and the second electronic component (50B) on the first main surface (51a) of the mounting substrate (51). The side shield electrode (55) is provided on at least one side surface (50u, 50v) of the third electronic component (50C). The mounting substrate (51) has a ground layer (51g). The side shield electrode (55) is connected to the ground layer (51g).

[0206] According to this configuration, the side shield electrode (55) provided on the outer peripheral surface (50t) of the third electronic component (50C) can reduce the interference of electromagnetic waves (signals) between the first electronic component (50A) and the second electronic component (50B). In addition, since the side shield electrode (55) is disposed using the outer peripheral surface (50t) of the third electronic component (50C), there is no need to secure an arrangement space for arranging the shield wall on the first main surface (51a) of the mounting substrate (51) as compared with the case where a shield wall is disposed separately from the third electronic component (50C). As a result, the high-frequency module (1) can be miniaturized.

[0207] The high-frequency module (1) of the second aspect further includes a resin member (53) and an external shield electrode (54) in the first aspect. The resin member (53) is provided on the first main surface (51a) of the mounting substrate (51) so as to cover the first electronic component (50A), the second electronic component (50B), the third electronic component (50C), and the side shield electrode (55). The external shield electrode (54) is provided on at least the outer surface (53s) of the resin member (53) and is connected to the ground layer (51g). The side shield electrode (55) is connected to the external shield electrode (54).

[0208] According to this configuration, by using the external shield electrode (54), the side shield electrode (55) can be connected to the ground layer (51g) of the mounting substrate (51) with a simple structure.

[0209] The high-frequency module (1) of the third aspect further includes, in the second aspect, a top surface shield electrode (60) and a connection member (61; 61A). The top surface shield electrode (60) is provided on the main surface (50s) of the mounting substrate (51) on the side opposite to the side of the third electronic component (50C), and is connected to the side shield electrode (55). The connection member (61; 61A) connects the top surface shield electrode (60) and the external shield electrode (54).

[0210] According to this configuration, even if the entire top surface (main surface (50s) on the side opposite to the side of the mounting substrate (51)) of the third electronic component (50C) is not exposed from the resin member (53), the side shield electrode (55) and the external shield electrode (54) can be connected by the connection member (61; 61A).

[0211] The high-frequency module (1) of the fourth aspect further includes, in the second aspect, a top surface shield electrode (60) and a bonding wire (70). The top surface shield electrode (60) is provided on the main surface (50s) of the mounting substrate (51) on the side opposite to the side of the third electronic component (50C), and is connected to the side shield electrode (55). The bonding wire (70) has a first end portion (70a) and a predetermined portion (70c). The predetermined portion (70c) is a portion different from the first end portion (70a). The first end portion (70a) of the bonding wire (70) is connected to the top surface shield electrode (60), and the predetermined portion (70c) of the bonding wire (70) is connected to the external shield electrode (54).

[0212] According to this configuration, even if the entire top surface (main surface (50s) on the side opposite to the side of the mounting substrate (51)) of the third electronic component (50C) is not exposed from the resin member (53), the side shield electrode (55) and the external shield electrode (54) can be connected by the bonding wire (70).

[0213] The high-frequency module (1) according to the fifth aspect further includes a conductive member (80) in the fourth aspect. The conductive member (80) is provided on the first main surface (51a) of the mounting substrate (51) and is connected to the ground layer (51g). The bonding wire (70) further has a second end portion (70b) different from the first end portion (70a). The second end portion (70b) of the bonding wire (70) is connected to the conductive member (80).

[0214] According to this configuration, two paths can be secured: a first path via the external shield electrode (54) and a second path via the conductive member (80) as paths for connecting the side shield electrode (55) to the ground layer (51g). Thereby, the electromagnetic shielding property of the side shield electrode (55) can be improved.

[0215] In the high-frequency module (1) according to the sixth aspect, in the fifth aspect, the conductive member (80) is a pad electrode (52p), an external electrode (81a), or a metal wall (82) for shielding. The pad electrode (52p) is disposed on the first main surface (51a) of the mounting substrate (51). The external electrode (81a) is disposed on the first main surface (51a) of the mounting substrate (51) and is an external electrode (81a) of a predetermined electronic component (81) different from the first electronic component (50A), the second electronic component (50B), and the third electronic component (50C). The metal wall (82) for shielding is provided on the first main surface (51a) of the mounting substrate (51).

[0216] According to this configuration, since an existing conductive member (80) disposed on the first main surface (51a) of the mounting substrate 51 can be used as the conductive member (80), an increase in the size of the high-frequency module (1) can be avoided.

[0217] The high-frequency module (1) according to the seventh aspect further includes, in any one of the first to third aspects, a first top surface shield electrode (60), a fourth electronic component (50D), a second side surface shield electrode (90), a second top surface shield electrode (91), and a bonding wire (93). The first top surface shield electrode (60) is provided on the main surface (50s) of the third electronic component (50C) opposite to the side of the mounting substrate (51), and is connected to the first side surface shield electrode (55) which is the side surface shield electrode (55). The fourth electronic component (50D) is disposed between the first electronic component (50A) and the second electronic component (50B) on the first main surface (51a) of the mounting substrate (51), and is adjacent to the third electronic component (50C). The second side surface shield electrode (90) is provided on at least one side surface of the fourth electronic component (50D), and is connected to the ground layer (51g). The second top surface shield electrode (91) is provided on the main surface (50s) of the fourth electronic component (50D) opposite to the side of the mounting substrate (51), and is connected to the second side surface shield electrode (90). The bonding wire (93) has a first end portion (93a) and a second end portion (93b). The first end portion (93a) of the bonding wire (93) is connected to the first top surface shield electrode (60) or the second top surface shield electrode (91). The second end portion (93b) of the bonding wire (93) is connected to a pad electrode (52p) provided between the third electronic component (50C) and the fourth electronic component (50D) on the first main surface (51a) of the mounting substrate (51).

[0218] According to this configuration, the gap (M1) between the third electronic component (50C) and the fourth electronic component (50D) can be electromagnetically shielded by the bonding wire (93). As a result, the electromagnetic wave interference between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0219] The high-frequency module (1) according to the eighth aspect further includes, in any one of the first to third aspects, a first top surface shield electrode (60), a fourth electronic component (50D), a second side surface shield electrode (90), a second top surface shield electrode (91), and a bonding wire (94). The first top surface shield electrode (60) is provided on the main surface (50s) of the third electronic component (50C) on the side opposite to the mounting substrate (51), and is connected to the first side surface shield electrode (55) which is the side surface shield electrode (55). The fourth electronic component (50D) is disposed between the first electronic component (50A) and the second electronic component (50B) on the first main surface (51a) of the mounting substrate (51), and is adjacent to the third electronic component (50C). The second side surface shield electrode (90) is provided on at least one side surface of the fourth electronic component (50D), and is connected to the ground layer (51g). The second top surface shield electrode (91) is provided on the main surface (50s) of the fourth electronic component (50D) on the side opposite to the mounting substrate (51), and is connected to the second side surface shield electrode (90). The bonding wire (94) has a first end portion (94a) and a second end portion (94b). The first end portion (94a) of the bonding wire (94) is connected to the first top surface shield electrode (60). The second end portion (94b) of the bonding wire (94) is connected to the second top surface shield electrode (91).

[0220] According to this configuration, the gap (M1) between the third electronic component (50C) and the fourth electronic component (50D) can be electromagnetically shielded by the bonding wire (94). As a result, the electromagnetic wave interference between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0221] The high-frequency module (1) of the ninth aspect further includes a resin member (53), an external shield electrode (54), a top surface shield electrode (60), and a bonding wire (95) in any one of the first to third aspects. The resin member (53) is provided on the first main surface (51a) so as to cover the first electronic component (50A), the second electronic component (50B), the third electronic component (50C), and the side surface shield electrode (55). The external shield electrode (54) is provided at least on the outer surface (53s) of the resin member (53) and is connected to the ground layer (51g). The top surface shield electrode (60) is provided on the main surface (50s) opposite to the side of the mounting substrate (51) in the third electronic component (50C) and is connected to the side surface shield electrode (55). The bonding wire (95) has a first end portion (95a) and a second end portion (95b). The external shield electrode (54) has a plurality of side portions (54u). The plurality of side portions (54u) are provided on the plurality of side surfaces (53u) of the resin member (53). The third electronic component (50C) is adjacent to one side portion (54v) among the plurality of side portions (54u). The first end portion (95a) of the bonding wire (95) is connected to the top surface shield electrode (60) provided on the third electronic component (50C). The second end portion (95b) of the bonding wire (95) is connected to one side portion (54v) of the external shield electrode (54).

[0222] According to this configuration, the bonding wire (95) can electromagnetically shield the gap (M2) between the third electronic component (50C) and one side portion (54v) adjacent to the third electronic component (50C) among the plurality of side portions (54u) of the external shield electrode (54). As a result, the electromagnetic wave interference between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0223] The high-frequency module (1) according to the tenth aspect further includes a fourth electronic component (50D) and a bonding wire (96) in any one of the first to third aspects. The fourth electronic component (50D) is disposed between the first electronic component (50A) and the second electronic component (50B) on the first main surface (51a) of the mounting substrate (51) and is adjacent to the third electronic component (50C). The bonding wire (96) is provided between the third electronic component (50C) and the fourth electronic component (50D) on the first main surface (51a) of the mounting substrate (51). Both ends (96a, 96b) of the bonding wire (96) are connected to the pad electrode (52p). The pad electrode (52p) is provided between the third electronic component (50C) and the fourth electronic component (50D) on the first main surface (51a) of the mounting substrate (51) and is connected to the ground layer (51g).

[0224] According to this configuration, the gap (M1) between the third electronic component (50C) and the fourth electronic component (50D) can be electromagnetically shielded by the bonding wire (96). As a result, the electromagnetic wave interference between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0225] In the high-frequency module (1) according to the eleventh aspect, in any one of the first to tenth aspects, the third electronic component (50C) is an elastic wave filter (7, 8) having a piezoelectric substrate.

[0226] According to this configuration, since the elastic wave filters (7, 8) are used for transmission and reception, they are often disposed between the transmission area (R1) and the reception area (R2). By providing the side shield electrode (55) on the outer peripheral surface of such an elastic wave filter (7, 8), the isolation between the transmission area (R1) and the reception area (R2) can be improved without significantly changing the arrangement of the components disposed on the mounting substrate (51).

[0227] In the high-frequency module (1) according to the twelfth aspect, in any one of the second to tenth aspects, the resin member (53) has a through hole (53h). The through hole (53h) exposes a predetermined region (55n) of the main surface (55m) of the side surface shield electrode (55) of the third electronic component (50C). The external shield electrode (54) further covers the inner peripheral surface of the through hole (53h) and the predetermined region (55n) of the side surface shield electrode (55). The external shield electrode (54) is connected to the side surface shield electrode (55) by contacting the predetermined region (55n).

[0228] According to this configuration, since the external shield electrode (54) directly contacts the predetermined region (55n) of the main surface (55m) of the side surface shield electrode (55), the contact area with the side surface shield electrode (55) can be increased. As a result, the conductivity between the side surface shield electrode (55) and the external shield electrode (54) can be improved, and the shielding performance of the side surface shield electrode (55) can be improved.

[0229] The communication device (30) according to the thirteenth aspect includes the high-frequency module (1) described in any one of the first to twelfth aspects and a signal processing circuit (2). The signal processing circuit (2) is connected to the high-frequency module (1) and processes high-frequency signals.

[0230] According to this configuration, a communication device (30) having the effects of the high-frequency module (1) can be provided.

Description of Reference Numerals

[0231] 1 High-frequency module 2 Signal processing circuit 2a RF signal processing circuit 2b Baseband signal processing circuit 3 Antenna 5a~5e External terminals 6 Switch 6a Common terminal 6b First selection terminal 6c Second selection terminal 7 Transmission filter 7a Input section 7b Output section 8 Receiving filter 8a Input section 8b Output section 10 Power amplifier 10a Input section 10b Output section 11 Low-noise amplifier 11a Input section 11b Output section Integrated circuits 13 - 16 19 Controller 30 Communication device 50 Electronic component 50a External electrode 50A First electronic component 50B Second electronic component 50C Third electronic component 50D Fourth electronic component 50g Ground electrode 50s Main surface 50t Outer peripheral surface 50u First side surface (side surface) 50v Second side surface (side surface) 51 Mounting substrate 51a First main surface 51b Second main surface 51c Outer peripheral surface 51e, 51f Via electrodes 51g Ground layer 52, 52p Pad electrodes 53 Resin member 53h, 53p Through holes 53q Top surface 53r Outer peripheral surface 53s Outer surface 53u Side surface 54 External shield electrode 54p Opening 54u, 54v Side portions 55 Side shield electrode (First side shield) 55a End portion 55m Main surface 55n Predetermined region 60 Top surface shield electrode (First top surface shield electrode) 60n Second end 60p Part 61, 61A Connecting member 61m First end 61n Second end 61v End 61w Part 62 IDT electrode 62a Lead-out electrode 63 Terminal 63a End face 65 Cover member 65a First main surface 65b Second main surface 65c Outer peripheral surface 65d Through hole 66 Piezoelectric substrate 66a First main surface 66b Second main surface 66c Outer peripheral surface 67 Spacer layer 67c Outer peripheral surface 70 Bonding wire 70a First end 70b Second end 70c Predetermined position 80 Conductive member 81 Electronic component 81a, 81p External electrode 82 Metal wall 82 Shielding metal wall 82s Top surface 90 Second side surface shielding electrode 91 Second top surface shielding electrode 93, 93A, 93B, 94, 95, 96 Bonding wire 93a, 94a, 95a, 96a First end 93b, 94b, 95b, 96b Second end 100 Mounting substrate 102s Outer surface D1 Direction IC switch K1, K2 Electromagnetic wave L1 First signal path L2 Second signal path M1, M2 Gap R1 First region R2 Second Region R3 Third Region S1 Accommodation Space W1, W3 Width

Claims

1. A mounting substrate having a first main surface and a second main surface facing each other, a first electronic component disposed on the first main surface of the mounting substrate, a second electronic component disposed on the first main surface of the mounting substrate, a third electronic component disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate, and a side shield electrode provided on at least one side surface of the third electronic component, wherein the mounting substrate has a ground layer, and the side shield electrode is connected to the ground layer, a high-frequency module.

2. a resin member provided on the first main surface of the mounting substrate so as to cover the first electronic component, the second electronic component, the third electronic component, and the side shield electrode, and an external shield electrode provided at least on an outer surface of the resin member and connected to the ground layer, wherein the side shield electrode is connected to the external shield electrode, The high-frequency module according to claim 1.

3. a top surface shield electrode provided on a main surface of the third electronic component opposite to the side of the mounting substrate and connected to the side shield electrode, and a connecting member connecting the top surface shield electrode and the external shield electrode, The high-frequency module according to claim 2.

4. a top surface shield electrode provided on a main surface of the third electronic component opposite to the side of the mounting substrate and connected to the side shield electrode, and bonding wires, wherein the bonding wires have a first end portion and a predetermined portion different from the first end portion, the first end portion of the bonding wires is connected to the top surface shield electrode, and the predetermined portion of the bonding wires is connected to the external shield electrode, The high-frequency module according to claim 2.

5. further comprising a conductive member provided on the first main surface of the mounting substrate and connected to the ground layer, wherein the bonding wires further have a second end portion different from the first end portion, and the second end portion of the bonding wires is connected to the conductive member, The high-frequency module according to claim 4.

6. The conductive member is a pad electrode disposed on the first main surface of the mounting substrate, an external electrode of a predetermined electronic component disposed on the first main surface of the mounting substrate and different from the first electronic component, the second electronic component, and the third electronic component, or A metal wall for shielding provided on the first main surface of the mounting substrate The high-frequency module according to claim 5 **Claim 7** A first top surface shield electrode provided on the main surface of the third electronic component opposite to the side of the mounting substrate and connected to the first side surface shield electrode which is the side surface shield electrode A fourth electronic component disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate and adjacent to the third electronic component A second side surface shield electrode provided on at least one side surface of the fourth electronic component and connected to the ground layer A second top surface shield electrode provided on the main surface of the fourth electronic component opposite to the side of the mounting substrate and connected to the second side surface shield electrode A bonding wire having a first end portion and a second end portion, further comprising The first end portion of the bonding wire is connected to the first top surface shield electrode or the second top surface shield electrode, and the second end portion of the bonding wire is connected to a pad electrode provided between the third electronic component and the fourth electronic component on the first main surface of the mounting substrate The high-frequency module according to any one of claims 1 to 3 **Claim 8** A first top surface shield electrode provided on the main surface of the third electronic component opposite to the side of the mounting substrate and connected to the first side surface shield electrode which is the side surface shield electrode A fourth electronic component disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate and adjacent to the third electronic component A second side surface shield electrode provided on at least one side surface of the fourth electronic component and connected to the ground layer A second top surface shield electrode provided on the main surface of the fourth electronic component opposite to the side of the mounting substrate and connected to the second side surface shield electrode A bonding wire having a first end portion and a second end portion, further comprising The first end portion of the bonding wire is connected to the first top surface shield electrode, and the second end portion of the bonding wire is connected to the second top surface shield electrode The high-frequency module according to any one of claims 1 to 3 **Claim 9** A resin member provided on the first main surface so as to cover the first electronic component, the second electronic component, the third electronic component, and the side surface shield electrode At least an external shield electrode provided on the outer surface of the resin member and connected to the ground layer, A top surface shield electrode provided on the main surface of the third electronic component on the side opposite to the mounting substrate side and connected to the side surface shield electrode, A bonding wire having a first end portion and a second end portion, and further comprising, The external shield electrode has a plurality of side portions provided on a plurality of side surfaces of the resin member, The third electronic component is adjacent to one of the plurality of side portions, The first end portion of the bonding wire is connected to the top surface shield electrode provided on the third electronic component, and the second end portion of the bonding wire is connected to the one side portion of the external shield electrode, The high-frequency module according to any one of claims 1 to 3.

10. A fourth electronic component disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate and adjacent to the third electronic component, A bonding wire provided between the third electronic component and the fourth electronic component on the first main surface of the mounting substrate, and further comprising, Both ends of the bonding wire are connected to a pad electrode provided between the third electronic component and the fourth electronic component on the first main surface of the mounting substrate and connected to the ground layer, The high-frequency module according to any one of claims 1 to 3.

11. The third electronic component is an elastic wave filter having a piezoelectric substrate, The high-frequency module according to any one of claims 1 to 6.

12. The resin member has a through hole that exposes a predetermined region of the main surface of the side surface shield electrode of the third electronic component, The external shield electrode further covers the inner peripheral surface of the through hole and the predetermined region of the side surface shield electrode, and is connected to the side surface shield electrode by contacting the predetermined region, The high-frequency module according to any one of claims 2 to 6.

13. The high-frequency module according to any one of claims 1 to 6, and A signal processing circuit connected to the high-frequency module and processing a high-frequency signal, and comprising, A communication device.

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