Light emitting device and method for manufacturing the same

Abstract

To provide a light emitting device that can increase the wire arrangement density while improving the wire positioning accuracy.SOLUTION: A light emitting device includes: a base; a light emitting section arranged on an upper surface of the base; three or more wires each connected to the base; and a first mark provided on the upper surface of the base. The three or more wires include a first wire, a second wire, and a third wire. Joints between the three or more wires and the base are arranged along a first imaginary straight line. The first mark is arranged between the first wire and the second wire in a direction along the first imaginary straight line. The third wire is arranged adjacent to the second wire on the opposite side to the first wire with respect to the first mark. A distance between the first wire and the second wire is wider than a distance between the second wire and the third wire.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device and a method for manufacturing the light-emitting device.

Background Art

[0002] For example, Patent Document 1 discloses a configuration in which marks such as alignment marks are arranged between adjacent ones of a plurality of wires in order to improve the positional accuracy of the wires.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the configuration of Patent Document 1, since marks are arranged between adjacent wires, the arrangement density of the wires is low, and thus the output of light emitted from the light-emitting device may be small.

[0005] An embodiment according to the present disclosure aims to provide a light-emitting device and a method for manufacturing the light-emitting device that can increase the arrangement density of wires while improving the positional accuracy of the wires.

Means for Solving the Problems

[0006] The light-emitting device according to an embodiment of the present disclosure includes a base, a light-emitting portion disposed on the upper surface of the base, three or more wires each connected to the base, and a first mark provided on the upper surface of the base. The three or more wires include a first wire, a second wire, and a third wire. The joint portions of the three or more wires and the base are arranged along a first virtual straight line. The first mark is disposed between the first wire and the second wire in a direction along the first virtual straight line. The third wire is arranged adjacent to the second wire on the side opposite to the first wire with respect to the second wire. The distance between the first wire and the second wire is wider than the distance between the second wire and the third wire.

[0007] A method for manufacturing a light-emitting device according to an embodiment of the present disclosure includes a step of preparing a base provided with a first mark, a step of joining a first wire provided at a predetermined position with reference to the first mark, a step of joining a second wire provided on the side opposite to the joint portion of the first wire with reference to the first mark, and a step of joining a third wire arranged adjacent to the second wire on the side opposite to the first wire with respect to the second wire along a first virtual straight line passing through the joint portion of the first wire and the joint portion of the second wire. In the step of joining the third wire, the distance between the first wire and the second wire is set to be wider than the distance between the second wire and the third wire.

Advantages of the Invention

[0008] According to an embodiment of the present disclosure, it is possible to provide a light-emitting device and a method for manufacturing a light-emitting device that can increase the positional accuracy of wires and increase the arrangement density of wires.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0010] The light-emitting device and the method for manufacturing the light-emitting device according to the embodiment of the present disclosure will be described in detail with reference to the drawings. However, the embodiments shown below are examples of the light-emitting device and the method for manufacturing the light-emitting device for embodying the technical idea of the present embodiment, and are not limited thereto. In addition, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of the present disclosure only thereto without specific description, but are merely illustrative examples. Note that the sizes, positional relationships, etc. of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same names and reference numerals indicate the same or similar members, and detailed descriptions will be omitted as appropriate. As a cross-sectional view, an end view showing only the cut surface may be used.

[0011] In the drawings, directions such as the X direction, Y direction, and Z direction may be indicated using arrows. The directions of these arrows are consistent among a plurality of drawings related to the same embodiment. The direction in which the arrow points in the X direction is denoted as the +X direction or +X side, and the opposite direction of the +X direction is denoted as the -X direction or -X side. The direction in which the arrow points in the Y direction is denoted as the +Y direction or +Y side, and the opposite direction of the +Y direction is denoted as the -Y direction or -Y side. Also, the direction in which the arrow points in the Z direction is denoted as the +Z direction or +Z side, and the opposite direction of the +Z direction is denoted as the -Z direction or -Z side. The surface of the object when viewed from the +Z direction or +Z side is referred to as the "upper surface", and the surface of the object when viewed from the -Z direction or -Z side is referred to as the "lower surface". However, these do not limit the orientation during the use of the light-emitting device according to the embodiment, and the orientation of the light-emitting device is arbitrary. In this specification, along the X-axis, Y-axis, and Z-axis means that an object has an inclination within a range of ±5° with respect to these axes.

[0012] In this specification or the claims, with regard to polygons such as triangles and quadrilaterals, those having shapes subjected to processing such as rounding of corners, chamfering, corner rounding, and edge rounding at the corners of the polygon are also referred to as polygons. Also, not limited to the corners (ends of the sides), shapes having processing applied to the middle portions of the sides are likewise referred to as polygons. That is, shapes with partial processing while leaving the polygon as a base are included in the interpretation of "polygon" described in this specification and the claims.

[0013] Also, not limited to polygons, the same applies to terms representing specific shapes such as trapezoids, circles, and unevenness. The same also applies when dealing with each side forming the shape. That is, even if a side has processing applied to its corner or middle portion, the processed portion is included in the interpretation of "side". When distinguishing a "polygon" or "side" without partial processing from the processed shape, "strict" is added, for example, described as "strict quadrilateral", etc.

[0014] In addition, in this specification or the claims, descriptions such as up and down, left and right, front and back, front and rear, near and far only describe relative positional, directional, and orientation relationships, and do not have to conform to the relationships during use.

[0015] In addition, in this specification or the claims, when there are multiple components and they are to be distinguished and expressed separately, they may be distinguished by adding "first", "second", etc. to the head of each component. Also, the objects to be distinguished may be different between this specification and the claims. Therefore, even if a component with the same addition as in this specification is described in the claims, the object specified by this component may not match between this specification and the claims.

[0016] For example, in this specification, there are components distinguished by adding "first", "second", and "third". When the components with "first" and "third" added in this specification are described in the claims, for ease of viewing, in the claims, they may be distinguished by adding "first" and "second". In this case, the components with "first" and "second" added in the claims respectively refer to the components with "first" and "third" added in this specification. Note that the application of this rule is not limited to components, and it is also applied reasonably and flexibly to other objects.

[0017] [Embodiment] Referring to FIGS. 1 to 3, a light-emitting device according to an embodiment will be described. FIG. 1 is a schematic top view of the light-emitting device 100 according to the embodiment with the lid member removed. FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1. FIG. 3 is a schematic diagram showing a state in which displacement of the wire bonding location occurs in the light-emitting device 100 in FIG. 1. FIG. 4 is a schematic top view of the light-emitting device 100X according to a comparative example with the lid member removed. FIG. 5 is a schematic diagram showing a state in which displacement of the wire bonding location occurs in the light-emitting device 100X in FIG. 4. FIG. 6 is a schematic top view of the light-emitting device according to the embodiment. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 6. Note that in the light-emitting device 100X according to the comparative example shown in FIGS. 4 and 5, for the sake of easy understanding of the description, components having substantially the same functions as those of the light-emitting device 100 according to the embodiment are conveniently given the same reference numerals as those of the configuration of the light-emitting device 100.

[0018] As shown in FIGS. 1 and 2, the light-emitting device 100 according to the embodiment includes a base 1, a light-emitting portion 2 disposed on the upper surface 11 of the base 1, three or more wires 3 each connected to the upper surface 11 of the base 1, and a first mark 4 provided on the upper surface 11 of the base 1. The three or more wires 3 include a first wire 31, a second wire 32, and a third wire 33. The bonding locations of the three or more wires 3 and the base 1 are arranged along a first virtual straight line 5. The first mark 4 is disposed between the first wire 31 and the second wire 32 in the direction along the first virtual straight line 5. The third wire 33 is disposed adjacent to the second wire 32 on the side opposite to the first wire 31 with respect to the second wire 32. The distance d1 between the first wire 31 and the second wire 32 is wider than the distance d2 between the second wire 32 and the third wire 33.

[0019] In the examples shown in FIGS. 1 and 2, ten wires 3 are arranged side by side in the direction along the first virtual straight line 5. However, the number of wires 3 arranged side by side in the direction along the first virtual straight line 5 is not limited to ten, and may be any number of three or more. Further, in the light emitting device 100, as long as the condition that the interval d1 is wider than the interval d2 is satisfied, the lengths of the interval d1 and the interval d2 can be appropriately adjusted. Further, the three or more wires may electrically connect the base 1 and the light emitting portion 2.

[0020] The first mark 4 is disposed at a predetermined position on the base 1. The first mark 4 is disposed, for example, on the upper surface 11 of the base 1. The first mark 4 can be used as an alignment mark serving as a positioning reference when arranging three or more wires 3 on the base 1. In the example shown in FIG. 1, the first mark 4 is disposed on the second upper surface 112. The first mark 4 has a substantially rectangular shape in a top view.

[0021] In the light emitting device 100, the first virtual straight line 5 can be specified based on the first mark 4, and three or more wires 3 can be arranged along the specified first virtual straight line 5. As a method of specifying the first virtual straight line 5 based on the first mark 4, for example, the first virtual straight line 5 parallel to one side extending in the Y direction in the substantially rectangular first mark 4 can be specified. Specifically, by performing image processing on an image obtained by photographing the first mark 4 with a camera, one side extending in the Y direction of the first mark 4 can be detected, and the first virtual straight line 5 parallel to the one side can be specified. Further, for example, one side extending in the X direction of the first mark 4 can be detected, and the first virtual straight line 5 perpendicular to the straight line including the one side can be specified. The three or more wires 3 are arranged while referring to the photographed image so that the joining portions of the three or more wires 3 and the base are arranged along the specified first virtual straight line. Thereby, in the light emitting device 100, three or more wires 3 can be arranged based on the first mark 4. Note that the fact that one side extending in the Y direction in the first mark 4 and the first virtual straight line 5 are parallel includes a case where one side extending in the Y direction in the first mark 4 and the first virtual straight line 5 overlap in a top view.

[0022] However, when manufacturing the reference first mark 4, the first virtual straight line 5 may be determined to deviate from the design value due to deviations in the position, angle, etc. of the first mark 4 or deviations during detection. For example, if an error occurs in detecting one side of the first mark 4, the first virtual straight line 5 may be determined to be inclined with respect to one side of the first mark 4. The example shown in FIG. 3 shows a state in which the first virtual straight line 5 is inclined at an angle α with respect to one side extending in the Y direction in the first mark 4 in the light emitting device 100. In this case, among three or more wires 3, if the distance in the Y direction between the wire 3 located farthest from the first mark 4 in the direction along the first virtual straight line 5 and the first mark 4 is defined as the maximum distance M1, the amount of positional deviation C of the wire 3 located farthest from the first mark 4 is approximated by the following equation. C≒M1·tanα

[0023] Here, in the light emitting device 100X according to the comparative example shown in FIG. 4, the first mark 4 is arranged at a position not sandwiched between three or more wires 3 in the direction along the first virtual straight line 5. In the light emitting device 100X, the number of wires 3 arranged side by side in the direction along the first virtual straight line 5 is 10, the same as in the light emitting device 100. Also, in the light emitting device 100X, the interval dx between adjacent wires 3 arranged in the direction along the first virtual straight line 5 is equal to the interval d2 in the light emitting device 100.

[0024] As shown in FIG. 5, in the light emitting device 100X, it is assumed that the first virtual straight line 5 is inclined at an angle α with respect to one side extending in the Y direction in the first mark 4, similar to the example shown in FIG. 3. In this case, among three or more wires 3, if the distance in the Y direction between the wire 3 located farthest from the first mark 4 in the direction along the first virtual straight line 5 and the first mark 4 is defined as the maximum distance MX, the amount of positional deviation CX of the wire 3 located farthest from the first mark 4 is approximated by the following equation. CX≒MX·tanα

[0025] In the light-emitting device 100 according to the embodiment, a first mark 4 is disposed between a first wire 31 and a second wire 32 among three or more wires 3. Therefore, the maximum distance M1 between the first mark 4 and the wire 3 in the direction along the first virtual straight line 5 can be shortened as compared with the case where the first mark 4 is disposed outside the three or more wires 3 in the direction along the first virtual straight line 5. For example, since the maximum distance M1 is shorter than the maximum distance MX in the light-emitting device 100X according to the comparative example, in the light-emitting device 100, the amount of misalignment C can be made smaller than the amount of misalignment CX. Thereby, the misalignment of the three or more wires 3 with respect to the first mark 4 can be reduced, and the positioning accuracy of each of the three or more wires 3 can be increased. And, it is possible to reduce the possibility that the arrangement position of the wire 3 or the device for arranging the wire 3 on the base 1 interferes with the base 1 of the light-emitting device 100 and the wire 3 cannot be arranged on the base 1. Further, in the light-emitting device 100, among the three or more wires 3, the interval d1 between the first wire 31 and the second wire 32 is wider than the interval d2 between the second wire 32 and the third wire 33. Thereby, while securing a region for providing the first mark 4 between the first wire 31 and the second wire 32, the arrangement density of the wires 3 arranged without sandwiching the first mark 4 can be increased, and the size of the entire light-emitting device 100 can be reduced. Also, the number of wires 3 that can be provided in a predetermined region can be increased. As described above, in the present embodiment, it is possible to provide the light-emitting device 100 capable of increasing the positioning accuracy of the wires 3 and increasing the arrangement density of the wires.

[0026] Also, in the example shown in FIGS. 1 and 2, the light-emitting device 100 has a second mark 6 disposed on the upper surface 11 of the base 1 on the side opposite to the first mark 4 with respect to the light-emitting portion 2. The second mark 6 is disposed at a predetermined position in the base 1. The second mark 6 can be used as an alignment mark serving as a positioning reference when arranging three or more wires 3 on the base 1, similarly to the first mark 4. In the example shown in FIG. 1, the second mark 6 is disposed on the third upper surface 113. The second mark 6 has, for example, a substantially rectangular shape in a top view.

[0027] When the light-emitting device 100 has the first mark 4 and the second mark 6, for example, a line orthogonal to the reference line obtained from the first mark 4 and the second mark 6 can be specified as the first virtual line 5. For example, a line connecting the center of the first mark 4 and the center of the second mark 6 can be used as the reference line, or a line connecting the +Y side of the first mark 4 and the +Y side of the second mark 6 can be used as the reference line. Compared with the length of one side of the first mark 4, the reference line obtained from the first mark 4 and the second mark 6 is long, so the error caused by the deviation of the first mark 4 or the second mark 6 becomes relatively small. Therefore, the first virtual line 5 orthogonal to the reference line can be specified with high precision, and the positional accuracy of three or more wires 3 can be increased. Note that the light-emitting device 100 is not limited to two marks such as the first mark 4 and the second mark 6, and may have three or more marks.

[0028] In the light-emitting device 100, when positioning the wire 3 based only on the first mark 4, the shape of the first mark 4 in a top view is preferably a shape including sides such as a substantially rectangular shape or a substantially polygonal shape so that the first virtual line 5 can be specified based on one side of the first mark 4. Further, from the viewpoint of increasing the specification accuracy of the first virtual line 5 based on one side of the first mark 4, it is preferable to enlarge the first mark 4 and make one side of the first mark 4 longer. On the other hand, when positioning the wire 3 using a reference line obtained from a plurality of marks such as the first mark 4 and the second mark 6, the first mark 4 and the second mark 6 do not necessarily have to have sides, so the shapes of the first mark 4 and the second mark 6 in a top view may be a substantially circular shape, a substantially elliptical shape, etc. in addition to a substantially rectangular shape or a substantially polygonal shape. For example, the shapes of the first mark 4 and the second mark 6 in a top view may be square.

[0029] In the examples shown in FIGS. 1 and 2, the light-emitting device 100 includes a fourth wire 34 and a fifth wire 35 connected to the base 1. The joints of the fourth wire 34 and the fifth wire 35 with the base 1 are arranged on the side opposite to the first mark 4 with respect to the light-emitting part 2. The fourth wire 34 and the fifth wire 35 are adjacent to each other with the second mark 6 therebetween. In the examples shown in FIGS. 1 and 2, the joints of the fourth wire 34 and the fifth wire 35 with the base 1 are arranged along the second virtual straight line 7. With this configuration, in the light-emitting device 100, since the wires 3 can be arranged on both sides of the light-emitting part 2, the number of available wires can be increased. As the number of wires increases, the amount of current applied to the light-emitting elements included in the light-emitting part 2 can be increased. Therefore, in the light-emitting device 100, the output of the light emitted from the light-emitting device 100 can be increased according to the amount of applied current. Also, by arranging the second mark 6 between the fourth wire 34 and the fifth wire 35, compared with the case where the second mark 6 is arranged at a position not sandwiched by three or more wires 3 in the direction along the second virtual straight line 7, the maximum distance M2 between the second mark 6 and the wire 3 in the direction along the second virtual straight line 7 can be shortened. Since the maximum distance M2 is short, when three or more wires 3 are arranged such that the second virtual straight line 7 is inclined with respect to the second mark 6, the displacement of the wire 3 with respect to the second mark 6 can be reduced. For example, in FIG. 1, when three or more wires 3 are arranged such that the second virtual straight line 7 is inclined with respect to the side along the Y direction at the second mark 6, the displacement of the wire 3 in the X direction with respect to the second mark 6 can be reduced. Thereby, the displacement of three or more wires 3 with respect to the second mark 6 can be reduced, and the positional accuracy of each of the three or more wires 3 can be increased.

[0030] Also, in the light-emitting device 100, the distance d1 between the first wire 31 and the second wire 32 is preferably 200 μm or more and 500 μm or less. By satisfying this condition, in the light-emitting device 100, while securing a region for providing the first mark 4 between the first wire 31 and the second wire 32, the arrangement density of three or more wires 3 can be increased.

[0031] In addition, in the light-emitting device 100, the distance d2 between the second wire 32 and the third wire 33 is preferably shorter than the distance d1 between the first wire and the second wire and is 100 μm or more and 250 μm or less. By satisfying this condition, in the light-emitting device 100, it is possible to increase the arrangement density of three or more wires 3 while preventing contact between the second wire 32 and the third wire 33.

[0032] In addition, when the light-emitting element included in the light-emitting unit 2 is the semiconductor laser element 21, in the light-emitting device 100, the resonator length L of the semiconductor laser element 21 is preferably 1000 μm or more and 10000 μm or less, and more preferably 1500 μm or more. In the example shown in FIG. 1, the resonator length L represents the resonator length of the semiconductor laser element 21. In the example shown in FIG. 1, the semiconductor laser element 21 can emit laser light in the +Y direction. When the resonator length L is 1000 μm or more and 10000 μm or less, in the light-emitting device 100, the output of the laser light emitted from the semiconductor laser element 21 can be increased, and the output of the light emitted from the light-emitting device 100 can be increased.

[0033] In addition, in the light-emitting device 100, the base 1 can be configured to include ceramics. Thereby, the mass productivity of the base 1 is improved. In addition, ceramics are an inexpensive material compared to metals. By these, the cost of the light-emitting device 100 having the base 1 can be reduced.

[0034] In the light-emitting device 100, among three or more wires 3, the number of wires 3 arranged on one side sandwiching the first mark 4 can be made equal to the number of wires 3 arranged on the other side. For example, when the total number of three or more wires 3 is 10, the number of wires arranged on one side is 5, and the number of wires arranged on the other side is also 5. As a result, compared with the case where the number of wires arranged on one side is different from the number of wires arranged on the other side, the maximum distance M1 can be shortened. Therefore, the amount of displacement of the wire 3 located farthest from the first mark 4 can be reduced, and the positional accuracy of three or more wires 3 with respect to the first mark 4 can be increased. By increasing the positional accuracy of three or more wires 3, the number of wires 3 that can be provided in a predetermined region can be increased.

[0035] Hereinafter, details of the configuration included in the light-emitting device 100 will be described.

[0036] (Base 1) In the examples shown in FIGS. 1 and 2, the base 1 includes a concave portion 10, a first convex portion 12, a second convex portion 13, and a frame portion 14 located outside the concave portion 10. The upper surface 11 of the base 1 includes a first upper surface 111 that is the bottom surface of the concave portion 10, a second upper surface 112 that is the upper surface of the first convex portion 12 located on the -X side of the concave portion 10, a third upper surface 113 that is the upper surface of the second convex portion 13 located on the +X side of the concave portion 10, and a fourth upper surface 114 that is the upper surface of the frame portion 14. However, the upper surface 11 may be flat without unevenness. The width in the X direction in the top view of the first convex portion 12 and the second convex portion 13 is, for example, 0.3 mm or more and 0.7 mm or less. By setting this value, it is possible to secure a space for providing three or more wires 3 on the second upper surface 112 and the third upper surface 113, and to reduce the size of the light-emitting device 100 in the X direction.

[0037] In the top view, the outer edge shape of the base 1 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the examples shown in FIGS. 1 and 2, in the base 1, the long side direction of this rectangle is the same as the Y direction, and the short side direction is the same as the X direction. Note that, in the top view, the outer edge shape of the base 1 does not have to be rectangular.

[0038] From the second upper surface 112 and the third upper surface 113, a recess 10 that is recessed downward is formed. In the example shown in FIGS. 1 and 2, the recess 10 is sandwiched between the second upper surface 112 and the third upper surface 113 in a top view.

[0039] The inner edges of the second upper surface 112 and the third upper surface 113 respectively define the outer edge of the recess 10. In a top view, the outer edge shape of the recess 10 is substantially rectangular. This rectangle can be a rectangle having a long side and a short side. At the base 1, the long side direction of this rectangle is the same direction as the Y direction, and the short side direction is the same direction as the X direction. Note that the outer edge shape of the recess 10 does not have to be rectangular.

[0040] At least one wiring pattern may be provided on the second upper surface 112 of the first convex portion 12 and the third upper surface 113 of the second convex portion 13. This wiring pattern can be electrically connected to other wiring patterns via a wiring passing through the inside of the base 1. The other wiring patterns are provided, for example, on the fourth upper surface 114 and / or the lower surface of the base 1.

[0041] As described above, the base 1 can be formed using ceramic as the main material. Further, the base 1 may be formed by joining a bottom member including the first upper surface 111 formed using metal or a composite material containing metal as the main material, and a frame member having the second upper surface 112 and the third upper surface 113 formed using ceramic as the main material. Here, the main material refers to the material that occupies the largest proportion of mass or volume in the object to be formed. Note that when the object to be formed is formed from one material, that material is the main material. That is, for a certain material to be the main material includes the fact that the proportion occupied by that material can be 100%.

[0042] Examples of the ceramic include aluminum nitride, silicon nitride, aluminum oxide, silicon carbide, etc. Examples of the metal include copper, aluminum, iron, etc. Alternatively, as the composite material containing metal, copper molybdenum, copper-diamond composite material, copper tungsten, etc. can be used.

[0043] Further, the base 1 may be formed by molding ceramic as the main material and then providing a metal film on its surface. Examples of the metal film include those composed of a single layer such as copper, aluminum, gold, silver, etc., and those composed of multiple layers such as gold / nickel, titanium / platinum / gold, etc.

[0044] (Semiconductor laser element 21) In the examples shown in FIGS. 1 and 2, the light emitting portion 2 includes a submount 22 disposed on the first upper surface 111 and a semiconductor laser element 21 disposed on the submount 22. Note that the light emitting portion 2 may include an LED instead of the semiconductor laser element 21.

[0045] The semiconductor laser element 21 has a light emitting surface for emitting light. The semiconductor laser element 21 includes an upper surface, a lower surface located on the side opposite to the upper surface, and a plurality of side surfaces intersecting the upper surface and the lower surface. The upper surface or a side surface of the semiconductor laser element 21 can be used as the light emitting surface. In the example shown in FIG. 1, the side surface on the +Y side of the semiconductor laser element 21 is the light emitting surface, and as described above, laser light is emitted to the +Y side. Also, in the example shown in FIG. 1, the shape of the semiconductor laser element 21 in a top view is a substantially rectangular shape having a long side and a short side.

[0046] The semiconductor laser element 21 is a single emitter semiconductor laser element. Also, the semiconductor laser element 21 can be a multi-emitter semiconductor laser element having a plurality of emitters.

[0047] For the semiconductor laser element 21, for example, a semiconductor laser element that emits blue light or a semiconductor laser element that emits green light can be adopted. Also, a semiconductor laser element that emits red light may be adopted for the semiconductor laser element 21. Alternatively, for the semiconductor laser element 21, a semiconductor laser element that emits light of other colors such as infrared light or ultraviolet light may be adopted.

[0048] Here, blue light refers to light whose oscillation peak wavelength is within the range of 420 nm to 494 nm. Green light refers to light whose oscillation peak wavelength is within the range of 495 nm to 570 nm. Red light refers to light whose oscillation peak wavelength is within the range of 605 nm to 750 nm.

[0049] The semiconductor laser element 21 has a rectangular outer shape with one pair of opposite sides being the long sides and the other pair of opposite sides being the short sides in a top view. The laser light emitted from the semiconductor laser element 21 has a spread. Also, divergent light is emitted from the light emitting surface of the semiconductor laser element 21.

[0050] The light emitted from the semiconductor laser element 21 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface. The FFP is the shape and light intensity distribution of the emitted light at a position away from the light emitting surface.

[0051] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. Also, in the light intensity distribution of the FFP, the light having an intensity of 1 / e 2 or more of the peak intensity value is called the light of the main part.

[0052] The shape of the FFP of the light emitted from the semiconductor laser element 21 is an elliptical shape in a plane parallel to the light emitting surface, where the stacking direction is longer than the direction perpendicular to the stacking direction. The stacking direction is the direction in which a plurality of semiconductor layers including the active layer are stacked in the semiconductor laser element 21. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. Also, the major axis direction of the elliptical shape of the FFP can be called the fast axis direction of the semiconductor laser element 21, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 21.

[0053] Based on the light intensity distribution of the FFP, the angle at which the light with an intensity of 1 / e 2 of the peak light intensity spreads is defined as the light spread angle of the semiconductor laser element 21. The light spread angle is 1 / e of the peak light intensity2 In addition to the light intensity, for example, it may be obtained from the light intensity at half the peak light intensity. In the description of this specification, when simply referring to the "light divergence angle", it refers to the light divergence angle at the light intensity of 1 / e of the peak light intensity. 2 It should be noted that the divergence angle in the fast axis direction is larger than the divergence angle in the slow axis direction.

[0054] Examples of the semiconductor laser element 21 that emits blue light or the semiconductor laser element 21 that emits green light include a semiconductor laser element 21 containing a nitride semiconductor. As the nitride semiconductor, for example, GaN, InGaN, and AlGaN can be used. Examples of the semiconductor laser element 21 that emits red light include those containing InAlGaP-based, GaInP-based, GaAs-based, or AlGaAs-based semiconductors.

[0055] (Submount 22) In the example shown in FIG. 2, the submount 22 has an upper surface 221, a lower surface 222, and at least one side surface 223. The submount 22 has an outer shape in which the length in one direction is larger than the length in the direction perpendicular thereto in a top view. The upper surface 221 has a rectangular shape. The upper surface 221 can have a rectangular shape with a short side and a long side.

[0056] The submount 22 can be a rectangular parallelepiped. The distance between the upper surface 221 and the lower surface 222 of the submount 22 is smaller than the distance between the other opposing side surfaces 223. The distance between the upper surface 221 and the lower surface 222 is called the thickness of the submount 22. Note that the shape of the submount 22 does not have to be limited to a rectangular parallelepiped.

[0057] An arrangement region is provided on the upper surface 221. This arrangement region is a region where other components are arranged. This arrangement region secures a space for arranging other components. The shape of the arrangement region corresponds to the shape of the components arranged therein. A plurality of arrangement regions may be provided on the upper surface 221.

[0058] The length of the short side on the upper surface 221 is, for example, 500 μm or more and 1500 μm or less. The length of the long side on the upper surface 221 is, for example, 1000 μm or more and 3000 μm or less. The thickness of the submount 22 is, for example, 200 μm or more and 500 μm or less. The length of the long side of the upper surface 221 is, for example, 150% or more and 300% or less of the length of the short side.

[0059] The submount 22 can be formed, for example, using silicon nitride, aluminum nitride, silicon carbide, or diamond. Further, a metal film for bonding to other components may be provided in the placement area on the upper surface 221.

[0060] In the examples shown in FIGS. 1 and 2, the light emitting unit 2 includes a submount 22 disposed on the first upper surface 111 and a semiconductor laser element 21 disposed on the submount 22. However, the semiconductor laser element 21 may be directly provided on the first upper surface 111. In that case, the semiconductor laser element 21 can be a component of the light emitting unit 2. That is, the submount may not be included as a component of the light emitting unit 2.

[0061] (Wire 3) The wire 3 is a linear conductive material with both ends as bonding portions. The bonding portions at both ends become bonding portions with other components. The wire 3 is composed of, for example, a metal material. For the metal material constituting the wire 3, gold, aluminum, silver, copper, etc. can be used.

[0062] (First mark 4 and second mark 6) The first mark 4 and the second mark 6 can be formed on the upper surface 11 of the base 1, for example, by plating a metal. Specifically, for example, when forming a metal film on the upper surface 11 of the base 1, the portions where the metal film is not provided at predetermined locations can be made the first mark 4 and the second mark 6. The first mark 4 is formed on the second upper surface 112 of the first convex portion 12. The second mark 6 is formed on the third upper surface 113 of the second convex portion 13.

[0063] (Reflection member 8) The reflection member 8 has a light reflection surface that reflects light. Also, the light reflection surface is inclined with respect to the lower surface. That is, the light reflection surface is neither perpendicular nor parallel in the arrangement relationship as seen from the lower surface. The straight line connecting the lower end and the upper end of the light reflection surface is inclined with respect to the lower surface of the reflection member 8. The angle of the light reflection surface with respect to the lower surface, or the angle of the straight line connecting the lower end and the upper end of the light reflection surface with respect to the lower surface, shall be called the inclination angle of the light reflection surface. The reflection member 8 reflects the laser light emitted from the semiconductor laser element 21 and changes the traveling direction of the laser light. The reflection member 8 can, for example, reflect the laser light emitted from the semiconductor laser element 21 and change the traveling direction of the laser light to a direction perpendicular to the upper surface 11 of the base 1.

[0064] In the illustrated reflection member 8, the light reflection surface is a plane and forms an inclination angle of 45 degrees with respect to the lower surface of the reflection member 8. Note that the light reflection surface does not have to be a plane and may be, for example, a curved surface. Also, the inclination angle of the light reflection surface does not have to be 45 degrees.

[0065] For the main material of the reflection member 8, glass, metal, etc. can be used. The main material is preferably a material resistant to heat. For example, glass such as quartz or BK7 (borosilicate glass), metal such as aluminum can be used. The reflection member 8 can also be formed using Si as the main material. If the main material is a reflective material, the light reflection surface can be formed from the main material. When forming the light reflection surface separately from the main material, the light reflection surface can be formed using, for example, a dielectric multilayer film such as Ag, Al and other metals or Ta 2 O 5 / SiO 2 、TiO 2 / SiO 2 、Nb 2 O 5 / SiO 2 etc.

[0066] (Cover member 9) In the example shown in FIG. 6, the lid member 9 has a lower surface and an upper surface, and is configured in the shape of a rectangular parallelepiped flat plate. Note that the lid member 9 does not have to be a rectangular parallelepiped. The lid member 9 has a light-shielding portion 91 which is a region having no light-transmitting property and a window portion 92 which is a region having light-transmitting property. Note that the lid member 9 does not have to have the light-shielding portion 91. Here, the light-transmitting property means that the transmittance with respect to light is 80% or more. Note that it does not have to have a transmittance of 80% or more with respect to light of all wavelengths. The lid member 9 is formed using, for example, sapphire or glass as a main material. The main material forming the lid member 9 is a material having high light-transmitting property.

[0067] (Light-emitting device 100) In the light-emitting device 100, the semiconductor laser element 21 is disposed on the upper surface 221 of the submount 22. The submount 22 is disposed on the first upper surface 111 of the base 1. In addition, three or more wires 3 electrically connect the semiconductor laser element 21 to the base 1.

[0068] The light-emitting device 100 may further include other components in addition to the configurations shown in FIGS. 1 and 2. Examples of the other components include an optical member and an external electrode. The optical member is a member that gives an optical action such as transmission, refraction, condensing, diffusion, and collimation to the incident laser light. For example, the optical member includes a reflecting member that reflects the laser light emitted from the semiconductor laser element 21 in the +Y direction in the +Z direction. In addition, the light-emitting device 100 may further include a light-emitting element such as a light-emitting diode or a semiconductor laser element separately from the semiconductor laser element 21. Further, the light-emitting device 100 may include a protection element, a photodiode, or the like.

[0069] (Method for manufacturing the light-emitting device 100) The embodiment includes a method for manufacturing a light emitting device 100. The method for manufacturing the light emitting device 100 includes the steps of (a) preparing a base 1 on which a first mark 4 is provided, (b) joining a first wire 31 provided at a predetermined position with respect to the first mark 4, (c) joining a second wire 32 provided on the opposite side of a joining point of the first wire 31 with respect to the first mark 4, and (d) joining a third wire 33 disposed adjacent to the second wire 32 on the opposite side of the first wire 31 with respect to the second wire 32, on a first virtual straight line 5 passing through the joining point of the first wire 31 and the joining point of the second wire 32. In the step of joining the third wire 33, the distance between the first wire 31 and the second wire 32 is set to be wider than the distance between the second wire 32 and the third wire 33.

[0070] (a) Step of preparing base 1 A base 1 having a first mark 4 provided thereon is prepared. The first mark 4 is formed on the upper surface 11 of the base 1, for example, by plating a metal in advance. Specifically, for example, when a metal film is formed on the upper surface 11 of the base 1, the metal film is not provided at a predetermined location, so that the location where the metal film is not provided can be the first mark 4. Note that, in addition to the first mark 4, a plurality of marks including the second mark 6 may be provided on the upper surface 11 of the base 1.

[0071] (b) Step of joining the first wire 31 The first wire 31 is bonded at a predetermined position with the first mark 4 as a reference. The first mark 4 can be used as an alignment mark that serves as a positioning reference when arranging three or more wires 3 on the base 1. In this process, the first wire 31 of the three or more wires 3 is bonded at a predetermined position with the first mark 4 as a reference. When bonding the first wire 31, a plurality of marks including the second mark 6 may be referenced in addition to the first mark 4. When bonding the first wire 31, a reference line derived from a plurality of marks including the first mark 4 and the second mark 6 may be referenced.

[0072] (c) Step of joining the second wire 32 Join a second wire 32 provided on the side opposite to the joint of the first wire 31 with respect to the first mark 4. Of the three or more wires 3, join the second wire 32 on the side opposite to the joint of the first wire 31 with respect to the first mark 4. Thereby, the first mark 4 is disposed between the first wire 31 and the second wire 32 among the three or more wires 3. When joining the second wire 32, a plurality of marks including the second mark 6 may be referred to in addition to the first mark 4. Also, when joining the second wire 32, a reference line derived by a plurality of marks including the first mark 4 and the second mark 6 may be referred to.

[0073] (d) Step of joining the third wire 33 Join a third wire 33 disposed adjacent to the second wire 32 on the side opposite to the first wire 31 with respect to the second wire 32 on a first virtual straight line 5 passing through the joint of the first wire 31 and the joint of the second wire 32. When joining the third wire 33, a plurality of marks including the second mark 6 may be referred to in addition to the first mark 4. Also, when joining the third wire 33, a reference line derived by a plurality of marks including the first mark 4 and the second mark 6 may be referred to. In the present embodiment, in this step, the distance between the first wire 31 and the second wire 32 is set to be wider than the distance between the second wire 32 and the third wire 33.

[0074] By the method of manufacturing a light-emitting device as described above, it is possible to provide a method of manufacturing a light-emitting device 100 that can increase the positional accuracy of the wires 3 while increasing the arrangement density of the wires.

[0075] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope described in the claims. The numbers such as ordinal numbers and quantities used in the description of the embodiments are all examples for specifically explaining the technology of the present disclosure, and the present disclosure is not limited to the exemplified numbers. In addition, the connection relationship between components is an example for specifically explaining the technology of the present disclosure, and the connection relationship for realizing the functions of the present disclosure is not limited thereto.

[0076] The light-emitting device described in each embodiment can be used in a projector, an in-vehicle headlight, a head-mounted display, lighting, a display, etc.

[0077] Embodiments of the present disclosure may include, for example, the following configurations. (Item 1) A base, A light-emitting part disposed on the upper surface of the base, Three or more wires each connected to the base, A first mark provided on the upper surface of the base, and having, The three or more wires include a first wire, a second wire, and a third wire, and the joint portions of the three or more wires and the base are arranged along a first virtual straight line. The first mark is disposed between the first wire and the second wire in a direction along the first virtual straight line. The third wire is arranged adjacent to the second wire on the side opposite to the first wire with respect to the second wire. A light-emitting device in which the distance between the first wire and the second wire is wider than the distance between the second wire and the third wire. (Item 2) The light-emitting device according to Item 1, further having a second mark disposed on the upper surface of the base on the side opposite to the first mark with respect to the light-emitting part. (Item 3) Further comprising a fourth wire and a fifth wire connected to the base, and the joints of the fourth wire, the fifth wire and the base are arranged on the side opposite to the first mark with reference to the light emitting part. The light emitting device according to claim 1 or 2, wherein the fourth wire and the fifth wire are adjacent to each other with the second mark therebetween. (Item 4) The light emitting device according to any one of claims 1 to 3, wherein the distance between the first wire and the second wire is 200 μm or more and 500 μm or less. (Item 5) The light emitting device according to any one of claims 1 to 4, wherein the distance between the second wire and the third wire is 100 μm or more and 250 μm or less. (Item 6) The light emitting part includes a semiconductor laser element. The light emitting device according to any one of claims 1 to 5, wherein the resonator length of the semiconductor laser element is 1000 μm or more and 10000 μm or less. (Item 7) The light emitting device according to any one of claims 1 to 6, wherein the base is composed of ceramics. (Item 8) The light emitting device according to any one of claims 1 to 7, wherein among the three or more wires, the number of wires arranged on one side with the first mark therebetween is equal to the number of wires arranged on the other side. (Item 9) The step of preparing a base provided with a first mark. The step of joining a first wire provided at a predetermined position with reference to the first mark. The step of joining a second wire provided on the side opposite to the joint of the first wire with reference to the first mark. Including the step of joining a third wire arranged adjacent to the second wire on the side opposite to the first wire with reference to the second wire along a first virtual straight line passing through the joint of the first wire and the joint of the second wire. In the step of joining the third wire, the distance between the first wire and the second wire is set to be wider than the distance between the second wire and the third wire. A method for manufacturing a light-emitting device.

Explanation of Signs

[0078] 1 Base 10 Concave portion 11 Upper surface 111 First upper surface 112 Second upper surface 113 Third upper surface 12 First convex portion 13 Second convex portion 2 Light-emitting portion 21 Semiconductor laser element 22 Submount 221 Upper surface 222 Lower surface 3 Wire 31 First wire 32 Second wire 33 Third wire 34 Fourth wire 35 Fifth wire 4 First mark 5 First virtual straight line 6 Second mark 7 Second virtual straight line 8 Reflective member 9 Cover member 100 Light-emitting device d1, d2 Distance M1, M2 Maximum distance α Angle

Claims

1. a base, a light-emitting part disposed on the upper surface of the base, three or more wires each connected to the base, and a first mark provided on the upper surface of the base, wherein the three or more wires include a first wire, a second wire, and a third wire, and the joints between the three or more wires and the base are arranged along a first virtual straight line, the first mark is disposed between the first wire and the second wire in a direction along the first virtual straight line, the third wire is disposed adjacent to the second wire on the side opposite to the first wire with respect to the second wire, and a distance between the first wire and the second wire is wider than a distance between the second wire and the third wire. A light-emitting device.

2. The light-emitting device according to claim 1, further comprising a second mark disposed on the upper surface of the base on a side opposite to the first mark with respect to the light-emitting part.

3. further comprising a fourth wire and a fifth wire connected to the base, wherein joints between the fourth wire and the fifth wire and the base are disposed on a side opposite to the first mark with respect to the light-emitting part, and the fourth wire and the fifth wire are adjacent to each other with the second mark therebetween. The light-emitting device according to claim 2.

4. The light-emitting device according to claim 1, wherein a distance between the first wire and the second wire is 200 μm or more and 500 μm or less.

5. The light-emitting device according to claim 1, wherein a distance between the second wire and the third wire is 100 μm or more and 250 μm or less.

6. the light-emitting part includes a semiconductor laser element, and a resonator length of the semiconductor laser element is 1000 μm or more and 10000 μm or less. The light-emitting device according to claim 1.

7. The light-emitting device according to claim 6, wherein the base is formed including ceramics.

8. Among the three or more wires, a number of wires disposed on one side sandwiching the first mark is equal to a number of wires disposed on the other side. The light-emitting device according to claim 1.

9. a step of preparing a base provided with a first mark, a step of joining a first wire provided at a predetermined position with respect to the first mark, a step of joining a second wire provided on a side opposite to the joint of the first wire with respect to the first mark. A step of joining a third wire that is arranged to be adjacent to the second wire on the side opposite to the first wire with respect to the second wire along a first virtual straight line passing through the joining location of the first wire and the joining location of the second wire, is included. A method for manufacturing a light-emitting device, wherein in the step of joining the third wire, the distance between the first wire and the second wire is set to be wider than the distance between the second wire and the third wire.

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