Touch panel

Abstract

To provide a touch panel with flexibility, and provide a touch panel with smaller thickness and higher detection sensitivity.SOLUTION: A touch panel with flexibility includes a display panel with flexibility and a touch sensor with flexibility that are bonded together with an adhesive layer. The adhesive layer has a Young's modulus of 1 kPa or more and 300 kPa or less. The adhesive layer has a thickness of 0.1 mm or more and 1 mm or less. The adhesive layer has a transmissivity of 70% or more.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a touch panel. In particular, it relates to a flexible touch panel. 。

[0002] Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in this specification and the like relates to an article, a method, or a manufacturing method. One aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, methods for driving them, or methods for manufacturing them.

Background Art

[0003] In recent years, the development of flexible devices provided with functional elements such as semiconductor elements, display elements, and light-emitting elements on a flexible substrate (hereinafter also referred to as a flexible substrate) has been underway. Representative examples of flexible devices include lighting devices and image display devices, as well as various semiconductor circuits having any semiconductor element such as a transistor. Patent Document 1 discloses a flexible active matrix light-emitting device including a transistor as a switching element and an organic EL (Electroluminescence) element on a film substrate.

[0004]

[0005] In recent years, display devices are expected to be applied to various uses and are required to be diversified. For example, as portable information terminals, smartphones and tablet terminals equipped with touch panels​ is under development.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] There is a demand for a flexible touch panel that has a function of inputting by touching the screen with a finger or the like as a user interface.

[0008] One aspect of the present invention aims to provide a flexible touch panel. Also, one aspect of the present invention aims to provide a lightweight touch panel. Or, one aspect of the present invention aims to provide a thin touch panel. Or, one aspect of the present invention aims to provide a touch panel with high detection sensitivity. Also, one aspect of the present invention aims to provide a highly reliable touch panel. Also, or, one aspect of the present invention aims to provide a touch panel that is resistant to repeated bending. Also, or, one aspect of the present invention aims to achieve both thinning of the touch panel and high detection sensitivity.

[0009] Or, one aspect of the present invention aims to provide a touch panel that is resistant to repeated bending and has high detection sensitivity. Or, one aspect of the present invention aims to provide a touch panel that is thin, resistant to repeated bending, and has high detection sensitivity.

[0010] Alternatively, one aspect of the present invention aims to provide a novel semiconductor device, a light-emitting device, a display device, a touch sensor, a touch panel, an electronic device, or a lighting device.

[0011] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not necessarily need to solve all of these problems. Note that other problems will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other problems from the description in the specification, drawings, claims, etc.

Means for Solving the Problems

[0012] One aspect of the present invention is a flexible touch panel having a display panel, a touch sensor, and an adhesive layer, the display panel being flexible, the touch sensor being flexible, and the adhesive layer being located between the display panel and the touch sensor, the adhesive layer having a first portion, a second portion, and a third portion, the first portion having a Young's modulus of 1 kPa or more and 300 kPa or less, the second portion having a thickness of 0.1 mm or more and 1 mm or less, and the third portion having a transmittance of 70% or more.

[0013] In the above configuration, it is preferable to have a capacitance-type touch sensor as the touch sensor. preferably.

[0014] In each of the above configurations, it is preferable for the display panel to have an organic EL element.

[0015] In each of the above configurations, it is preferable that the Young's modulus of the first portion is 1 kPa or more and 100 kPa or less. preferably.

[0016] In each of the above configurations, the thickness of the second part is preferably 0.1 mm or more and 0.5 mm or less. Preferably.

[0017] In each of the above configurations, the transmittance of the third part is preferably 90% or more.

[0018] In each of the above configurations, the adhesive layer has a fourth part, and the compression set rate of the fourth part is preferably 5 0% or less.

[0019] In each of the above configurations, the adhesive layer has a fifth part, and the penetration of the fifth part is preferably greater than 75 and more preferably 100 or more.

[0020] In each of the above configurations, the adhesive layer may be gel-like.

[0021] Note that the light-emitting device in this specification includes a display device using a light-emitting element. Also, a module in which a connector, for example, an anisotropic conductive film, or a TCP (Tape Carrier er Package) is attached to the light-emitting element, a module in which a printed wiring board is provided at the end of the TCP, or a module in which an IC (integrated circuit) is directly mounted on the light-emitting element by the COG (Chip On Glass) method may have a light-emitting device. Furthermore, lighting fixtures, etc. may also include a light-emitting device.

Effect of the Invention

[0022] In one aspect, a thin touch panel can be provided. In one aspect of the present invention, a lightweight touch panel can be provided. Or, in one aspect of the present invention a thin touch panel can be provided. Or, in one aspect of the present invention , a touch panel with high detection sensitivity can be provided. Or, in one aspect of the present invention, , a highly reliable touch panel can be provided. Or, in one aspect of the present invention, repeatedly , a touch panel that is resistant to repeated bending can be provided. Or, in one aspect of the present invention, , it is possible to achieve both thinning of the touch panel and high detection sensitivity.

[0023] Or, in one aspect of the present invention, a touch panel that is resistant to repeated bending and has high detection sensitivity can be provided. Or, in one aspect of the present invention, a touch panel that is thin, resistant to repeated bending, and has high detection sensitivity can be provided.

[0024] Or, in one aspect of the present invention, a novel semiconductor device, light-emitting device, display device, touch sensor, , touch panel, electronic device, or lighting device can be provided.

[0025] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will naturally become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, , claims, etc.

Brief Description of the Drawings

[0026]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Embodiments for Carrying Out the Invention

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. without departing from the spirit and scope of the present invention. Those skilled in the art can easily understand this. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. interpreted as being limited to the description of the embodiments shown below.

[0028] In the configuration of the invention described below, the same reference numerals are commonly used for the same parts or parts having similar functions among different drawings, and the repeated description thereof will be omitted. Further, when referring to similar functions, the hatching patterns may be the same and may not be particularly labeled. In addition, the positions, sizes, ranges, etc. of the respective components shown in the drawings and the like may not represent the actual positions, sizes, ranges, etc. for the sake of simplicity of understanding. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings and the like. Also, when referring to similar functions, the hatching patterns may be the same and may not be particularly labeled.

[0029] In addition, the positions, sizes, ranges, etc. of the respective components shown in the drawings and the like may not represent the actual positions, sizes, ranges, etc. for the sake of simplicity of understanding. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings and the like. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings and the like. That is, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings and the like.

[0030] (Embodiment 1) In this embodiment, a touch panel according to an aspect of the present invention will be described.

[0031] A touch panel according to an aspect of the present invention is a flexible touch panel, and includes a display panel, a touch sensor, and an adhesive layer. The display panel and the touch sensor each have flexibility. The adhesive layer is located between the display panel and the touch sensor. The Young's modulus of the adhesive layer is 1 kPa or more and 300 kPa or less.

[0032] A parasitic capacitance may be formed between the wiring or electrodes constituting the capacitive touch sensor and the wiring or electrodes constituting the display panel. Due to this parasitic capacitance, the capacitance change when a finger or the like is brought close is reduced, and the detection sensitivity of the touch sensor may decrease. Also, noise generated when driving the display panel may be transmitted to the touch sensor side through the parasitic capacitance, which may also cause a decrease in the detection sensitivity of the touch sensor. Therefore, it is preferable to sufficiently widen the distance between the touch sensor and the display panel. Therefore, it is preferable to sufficiently widen the distance between the touch sensor and the display panel.

[0033] On the one hand, when the adhesive layer that bonds the touch sensor and the display panel is thickened, the touch panel may be difficult to bend, the adhesive layer may peel off due to bending, or cracks may occur and it may be damaged.

[0034] Therefore, in the touch panel of one aspect of the present invention, the Young's modulus of the adhesive layer that bonds the touch sensor and the display panel is set to be 1 kPa or more and less than 300 kPa. Thereby, even if the adhesive layer is thickened, a touch panel that is resistant to repeated bending can be realized. Therefore, even when a capacitance-type touch sensor is used, a decrease in the detection sensitivity of the touch sensor can be suppressed.

[0035] In the touch panel of one aspect of the present invention, the Young's modulus of the adhesive layer is more preferably 1 kPa or more and 100 kPa or less, and particularly preferably 1 kPa or more and 50 kPa or less.

[0036] For example, the touch panel of one aspect of the present invention can have a minimum value of the radius of curvature when bent of 1 mm or more and 150 mm or less, preferably 1 mm or more and 100 mm or less, more preferably 1 mm or more and 50 mm or less, and even more preferably 1 mm or more and 5 mm or less.

[0037] In order to reduce the influence of the parasitic capacitance, it is preferable to set the thickness of the adhesive layer to 0.1 mm or more. For example, in the touch panel of one aspect of the present invention, the thickness of the adhesive layer is preferably 0.1 mm or more and 1 mm or less, and more preferably 0.1 mm or more and 0.5 mm or less.

[0038] Also, when the influence of the parasitic capacitance is small, the thickness of the adhesive layer may be less than 0.1 mm. ​​​​​​​​​​​​Examples of cases where the influence of parasitic capacitance is small include, for example, the case of using a touch sensor of an active matrix system described later. In such a case, in the touch panel of one aspect of the present invention, the thickness of the adhesive layer may be 0.001 mm or more and less than 0.1 mm, or 0.01 mm or more and less than 0.1 mm, etc. Thereby, a touch panel having a small thickness, being resistant to repeated bending, and having high detection sensitivity can be realized.

[0039] Further, in the touch panel of one aspect of the present invention, the transmittance of the adhesive layer is preferably 70% or more, more preferably 90% or more. The user of the touch panel visually recognizes the display of the display panel through the adhesive layer. Therefore, it is preferable that the transmittance of the adhesive layer is high.

[0040] Further, in the touch panel of one aspect of the present invention, the penetration of the adhesive layer is preferably greater than 75, more preferably 100 or more.

[0041] Further, in the touch panel of one aspect of the present invention, the compression set rate of the adhesive layer is preferably 50% or less.

[0042] In the above, the preferable numerical ranges of the thickness, Young's modulus, transmittance, penetration, and compression set rate of the adhesive layer are respectively given. In one aspect of the present invention, it is not necessary for the entire adhesive layer to show values within the numerical range, and it is sufficient if a part shows values within the numerical range.

[0043] For example, in one aspect of the present invention, the adhesive layer has a first part, and the Young's modulus of the first part may be 1 kPa or more and 300 kPa or less. Similarly, in one aspect of the present invention, the adhesive The layer has a second part, and the thickness of the second part may be 0.1 mm or more and 1 mm or less. Similarly, in one aspect of the present invention, the adhesive layer has a third part, and the transmittance of the third part may be 70% or more. The same applies to the penetration and compression set rate.

[0044] Also, in the touch panel of one aspect of the present invention, the adhesive layer may be gel-like. For example , as a material that can be used for the adhesive layer, silicone gel can be mentioned. For example, low molecular weight siloxane-containing silicone gel may be used.

[0045] Fig. 1(A) shows a schematic diagram of a touch panel according to one aspect of the present invention.

[0046] The touch panel of Fig. 1(A) has a display panel 11, an adhesive layer 12, and a touch sensor 13 .

[0047] Fig. 1(B) shows a conceptual diagram when the touch panel of Fig. 1(A) is bent. When the touch panel is bent , since the display panel 11 and the touch sensor 13 have different bending radii of curvature, a displacement occurs in the relative position of the other with respect to one. Here, as shown in Fig. 1(B), the present invention uses an adhesive layer 12 that can be deformed by bending. Therefore, even when the touch panel is bent, the adhesive layer 12 is difficult to peel off, and cracks are less likely to occur in the adhesive layer 12 .

[0048] In the examples described later, in the touch sensor and the display panel that overlap via the adhesive layer, attention is paid to the positions of the layer provided on the touch sensor side and the layer provided on the display panel side. Specifically , when bent and when not bent, the surface of the layer provided on the touch sensor side , ​Check whether there is a change in the relative position with respect to the layer provided on the display panel side.

[0049] In the embodiment, attention is paid to the color filter provided on the display panel side and the electrode provided on the touch sensor side. Then, a state where the sample is not bent, shown in FIG. 18(A), and a state where the sample is bent, shown in FIG. 18( B), are compared. In FIGS. 18(A) and (B), a photograph of the actual sample is shown on the left side, and a schematic diagram explaining the positional relationship between the color filter 98 and the electrode 99 when the sample is viewed from above is shown on the right side. The sample fabricated in the embodiment shows that by bending, the relative position of the electrode 99 with respect to the color filter 98 changes. From this, it is considered that the adhesive layer located between the touch sensor and the display panel is deformed by bending.

[0050] Also, FIGS. 1(C) to (E) show configuration examples of the touch panel. The touch panels shown in FIGS. 1(C) to (E) each have a display panel 11, an adhesive layer 12, and a touch sensor 13. In FIGS. 1(C) to (E), the configurations of the display panel 11 and the touch sensor 13 are different from each other.

[0051] In FIG. 1(C), the display panel 11 has a display element 15 and a pair of flexible substrates 16. The display element 15 is located between the pair of flexible substrates 16. In FIG. 1(C), the touch sensor 13 has a detection element (also referred to as a sensor element) 17 and a pair of flexible substrates 16. The detection element 17 is located between the pair of flexible substrates 16. Thus, a touch panel according to an aspect of the present invention has four flexible substrates 16. One flexible substrate 16 of the display panel 11 faces one flexible substrate 16 of the touch sensor 13 and is adhered by the adhesive layer 12. ​ That is, in the touch panel according to one aspect of the present invention, the display element 15 and the detection element 17 overlap via two flexible substrates 16.

[0052] In FIG. 1(D), similar to FIG. 1(C), the display panel 11 has the display element 15 and a pair of flexible substrates 16. In FIG. 1(D), the touch sensor 13 has the detection element 17 and one flexible substrate 16. The detection element 17 faces one flexible substrate 1 6 of the display panel 11 and is adhered by the adhesive layer 12. Thus, the touch panel according to one aspect of the present invention may have three flexible substrates 16.

[0053] That is, in the touch panel according to one aspect of the present invention, the display element 15 and the detection element 17 overlap via one flexible substrate 16.

[0054] The configuration in which the display element 15 and the detection element 17 overlap via one flexible substrate 16 is not limited to the configuration of FIG. 1(D ). For example, the touch sensor 13 may have the detection element 17 and a pair of flexible substrates 16, and the display panel 11 may have the display element 15 and one flexible substrate 16 . For example, the display element 15 and one flexible substrate 16 of the touch sensor 13 may face each other and be adhered by the adhesive layer 12. Also, other functional elements, functional layers, insulating layers, conductive layers, etc. may be provided between the display element 15 or the detection element 1 7 and the flexible substrate 16.

[0055] In FIG. 1(E), the display panel 11 has the flexible substrate 16 and the display element 15. In FIG. 1(E ), similar to FIG. 1(D), the touch sensor 13 has the detection element 17 and one flexible substrate ​It has 16 and. The display element 15 and the detection element 17 face each other and are adhered by the adhesive layer 12. Thus, the touch panel according to one aspect of the present invention may have two flexible substrates 16. That is, it may be.

[0056] In other words, in the touch panel according to one aspect of the present invention, the display element 15 and the detection element 17 overlap without passing through the flexible substrate 16. That is, they overlap without passing through the flexible substrate 16.

[0057] The configuration in which the display element 15 and the detection element 17 overlap without passing through the flexible substrate 16 is not limited to the configuration of FIG. 1(E). For example, other functional elements, functional layers, insulating layers, conductive layers, etc. may be provided between the display element 15 and the detection element 17. That is, other functional elements, functional layers, insulating layers, conductive layers, etc. may be provided between the display element 15 and the detection element 17. That is, they may be provided.

[0058] In the present embodiment, examples of two, three, or four flexible substrates included in the touch panel are shown, but the number of flexible substrates is not limited. When the number of flexible substrates included in the touch panel is small, the thickness of the entire touch panel can be reduced or the touch panel can be made lightweight, which is preferable. That is, when the number of flexible substrates included in the touch panel is small, the thickness of the entire touch panel can be reduced or the touch panel can be made lightweight, which is preferable. That is, it is preferable because the thickness of the entire touch panel can be reduced or the touch panel can be made lightweight. That is, it is preferable.

[0059] Cross-sectional schematic views of the touch panel according to one aspect of the present invention are shown in FIGS. 1(F), 2(A), (B), 3, FIGS. 19(A), (B). That is, they are shown.

[0060] The touch panel shown in FIG. 1(F) has a display panel 11, an adhesive layer 12, and a touch sensor 13. The touch panel shown in FIG. 1(F) is an example of a touch panel having four flexible substrates 16 shown in FIG. 1(C). That is, it is an example of a touch panel having four flexible substrates 16 shown in FIG. 1(C). That is, it is an example.

[0061] The display panel 11 shown in FIG. 1(F) includes four flexible substrates 16, three adhesive layers 18, two insulating layers 19, transistors 15a, transistors 15c, conductive layer 857, insulating layer 815. That is, it includes four flexible substrates 16, three adhesive layers 18, two insulating layers 19, transistors 15a, transistors 15c, conductive layer 857, insulating layer 815. The conductive layer 816, the insulating layer 817a, the insulating layer 817b, the light-emitting element 15b, the insulating layer 821, the spacer 827, the coloring layer 845, the light-shielding layer 847, and the overcoat 849, etc.

[0062] The insulating layer 19 and the flexible substrate 16 are bonded together by an adhesive layer 18.

[0063] The source electrode or the drain electrode of the transistor 15a is electrically connected to the lower electrode of the light-emitting element 15b via the conductive layer 816.

[0064] Note that the transistor included in the touch panel according to one aspect of the present invention is not particularly limited. The transistor 15a has a bottom gate structure, but it may have a top gate structure. Also, the transistor 15c has a dual gate structure having a first gate electrode located on the same surface as the gate electrode of the transistor 15a and a second gate electrode located on the same surface as the conductive layer 816, but is not limited thereto.

[0065] Also, the transistors included in the driving circuit portion and the transistors included in the display portion (also referred to as the pixel portion and the light-emitting portion) may have the same structure or different structures. Also, all of the plurality of transistors included in the driving circuit portion may have the same structure, or may have two or more types of structures. Also, all of the plurality of transistors included in the display portion may have the same structure, or may have two or more types of structures.

[0066] The coloring layer 845 overlaps with the light-emitting region of the light-emitting element 15b. The light-shielding layer 847 overlaps with the insulating layer 821.

[0067] The touch sensor 13 shown in FIG. 1(F) includes two flexible substrates 16, two adhesive layers 18, two ​​​​​​It has an insulating layer 19, a detection element 17, etc.

[0068] The detection element 17 has an electrode 321, an electrode 322, a wiring 323, and a dielectric layer 324.

[0069] The conductive layer 857 and the FPC (Flexible Printed Circuit) 808 are electrically connected via a connector 825. Also, the electrode 322 and the FPC 305 are electrically connected via a connector 355.

[0070] Regarding the configurations of the flexible substrate 16, the adhesive layer 18, and the insulating layer 19, refer to Embodiment 4. Also, for the adhesive layer 18, a material that can be used for the adhesive layer 12 may be used.

[0071] The touch panel shown in FIG. 19(A) is an example of a touch panel having the four flexible substrates 16 shown in FIG. 1(C). In FIGS. 1(F) and 19(A), the surface of the touch sensor 13 that is bonded to the display panel 11 is different. In the configuration of FIG. 19(A), the flexible substrate 16 to which the FPC 305 is to be attached is in contact with the adhesive layer 12. In this way, the surface of the touch sensor 13 that is bonded to the display panel 11 is not limited.

[0072] The touch panel shown in FIG. 2(A) is an example of a touch panel having the three flexible substrates 16 shown in FIG. 1(D). The touch panel shown in FIG. 2(A) is different from FIG. 1(F) in that the detection element 17 overlaps the adhesive layer 12 without passing through the insulating layer 19, the adhesive layer 18, and the flexible substrate 16.

[0073] The touch panel shown in FIG. 2(B) is an example of a touch panel having the two flexible substrates 16 shown in FIG. 1(E). ​​​This is an example of a touch panel. The touch panel shown in Fig. 2(B) overlaps with the adhesive layer 12 without passing through the light-emitting element 15b, the insulating layer 1 9, the adhesive layer 18, and the flexible substrate 16, which is different from Fig. 2(A). Also, the touch panel shown in Fig. 2(B) is different from Fig. 2(A) in that it has an insulating layer 19, a coloring layer, a light-shielding layer, and an overcoat between the detection element 17 and the adhesive layer 12.

[0074] Note that the coloring layer and the light-shielding layer may be located on the display element side or the touch sensor side when viewed from the adhesive layer 12, respectively.

[0075] The touch panel shown in Fig. 19(B) is an example of a touch panel having two flexible substrates 16 shown in Fig. 1(E). The display panel 11 and the touch sensor 13 each have one flexible substrate 16. The insulating layer 19 is exposed on the surface where the flexible substrates 16 of the display panel 11 and the touch sensor 13 are not provided. By bonding the insulating layers 19 together with the adhesive layer 12, the touch panel shown in Fig. 19(B) can be fabricated. Fig. 19(B) shows an example in which the coloring layer and the light-shielding layer are located on the display element side when viewed from the adhesive layer 12.

[0076] Also, as shown in Fig. 19(B), the insulating layers 817a and 817b do not have to be exposed at the ends of the touch panel. In particular, when an organic resin is used for the insulating layers 817a and 817b, it is possible to suppress the intrusion of moisture and the like, which is preferable.

[0077] The touch panel shown in Fig. 3 is an example of a touch panel having four flexible substrates 16 shown in Fig. 1(C).

[0078] ​​​​​​​​​The display panel 11 shown in FIG. 3 includes two flexible substrates 16, three adhesive layers 18, two insulating layers 19, a plurality of transistors, a contact portion 15d, a capacitor portion 15e, a conductive layer 857, an insulating layer 815, a conductive layer 816, an insulating layer 817a, an insulating layer 817b, a light-emitting element 15b, an insulating layer 82 1, a spacer 827, a coloring layer 845, a light-shielding layer 847, and an overcoat 849, etc. .

[0079] In FIG. 3, transistor 15c is used for the transistors in the drive circuit section. Also, for the transistor whose source electrode or drain electrode is connected to the lower electrode of the light-emitting element 15b, transistor 15c is also used. Further, transistor 15a is used as another transistor included in the display section. Transistor 15c can increase the field-effect mobility compared to transistor 15a, and can increase the on-current. As a result, a drive circuit section capable of high-speed operation can be fabricated. Also, a touch panel with a small occupied area of the drive circuit section can be fabricated. Further, by providing transistor 15c with a large on-current in the display section, even when the number of wirings increases in a large-sized touch panel or a high-definition touch panel, it is possible to reduce the signal delay in each wiring, and it is possible to suppress display unevenness.

[0080] The touch sensor 13 shown in FIG. 3 is an active matrix type touch sensor having transistors and capacitor elements. The transistors and the capacitor elements are electrically connected.

[0081] The touch sensor 13 includes two flexible substrates 16, two adhesive layers 18, two insulating layers 19, a detection element 17, etc.

[0082] ​​​​​​​​​ The detection element 17 is a capacitive element and includes a conductive layer 21, a conductive layer 23, and an insulating layer 20. The detection element 17 is electrically connected to the transistor 15a.

[0083] By forming the layers constituting the transistor and the electrodes and dielectric layers of the capacitive element in the same process, it is preferable that a touch sensor can be manufactured with a small number of processes. In FIG. 3, an example is shown in which the conductive layer 23 that can be manufactured in the same process as the second gate electrode of the transistor 15c is used. Note that, as the layer formed in the same process as the electrode of the capacitive element, for example, the gate electrode, source electrode, drain electrode, semiconductor layer, or wiring of the transistor can be mentioned. In FIG. 3, an example is shown in which the conductive layer 23 that can be manufactured in the same process as the second gate electrode of the transistor 15c is used. Note that, as the layer formed in the same process as the electrode of the capacitive element, for example, the gate electrode, source electrode, drain electrode, semiconductor layer, or wiring of the transistor can be mentioned. In FIG. 3, an example is shown in which the conductive layer 23 that can be manufactured in the same process as the second gate electrode of the transistor 15c is used. Note that, as the layer formed in the same process as the electrode of the capacitive element, for example, the gate electrode, source electrode, drain electrode, semiconductor layer, or wiring of the transistor can be mentioned. In FIG. 3, an example is shown in which the conductive layer 23 that can be manufactured in the same process as the second gate electrode of the transistor 15c is used. Note that, as the layer formed in the same process as the electrode of the capacitive element, for example, the gate electrode, source electrode, drain electrode, semiconductor layer, or wiring of the transistor can be mentioned. In FIG. 3, an example is shown in which the conductive layer 23 that can be manufactured in the same process as the second gate electrode of the transistor 15c is used. Note that, as the layer formed in the same process as the electrode of the capacitive element, for example, the gate electrode, source electrode, drain electrode, semiconductor layer, or wiring of the transistor can be mentioned.

[0084] Even when an active matrix type touch sensor is used, the number of flexible substrates 16 may be reduced to two or three. Even when an active matrix type touch sensor is used, the number of flexible substrates 16 may be reduced to two or three.

[0085] Details of the detection element 17 shown in FIGS. 1(F), 2(A), (B), 19(A), and (B) can be referred to in Embodiment 2. Details of the active matrix type touch sensor shown in FIG. 3 can be referred to in Embodiment 3. Details of the detection element 17 shown in FIGS. 1(F), 2(A), (B), 19(A), and (B) can be referred to in Embodiment 2. Details of the active matrix type touch sensor shown in FIG. 3 can be referred to in Embodiment 3. Details of the detection element 17 shown in FIGS. 1(F), 2(A), (B), 19(A), and (B) can be referred to in Embodiment 2. Details of the active matrix type touch sensor shown in FIG. 3 can be referred to in Embodiment 3.

[0086] Note that the touch sensor included in the touch panel of one aspect of the present invention is not particularly limited.

[0087] In one aspect of the present invention, for example, a capacitive touch sensor can be applied. As the capacitive method, there are a surface capacitive method, a projected capacitive method, and the like. As the projected capacitive method, there are a self-capacitance method, a mutual-capacitance method, and the like. The mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible. Note that a touch sensor such as a resistive film method, an ultrasonic method, or an optical method may also be used. In one aspect of the present invention, for example, a capacitive touch sensor can be applied. As the capacitive method, there are a surface capacitive method, a projected capacitive method, and the like. As the projected capacitive method, there are a self-capacitance method, a mutual-capacitance method, and the like. The mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible. Note that a touch sensor such as a resistive film method, an ultrasonic method, or an optical method may also be used. In one aspect of the present invention, for example, a capacitive touch sensor can be applied. As the capacitive method, there are a surface capacitive method, a projected capacitive method, and the like. As the projected capacitive method, there are a self-capacitance method, a mutual-capacitance method, and the like. The mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible. Note that a touch sensor such as a resistive film method, an ultrasonic method, or an optical method may also be used. In one aspect of the present invention, for example, a capacitive touch sensor can be applied. As the capacitive method, there are a surface capacitive method, a projected capacitive method, and the like. As the projected capacitive method, there are a self-capacitance method, a mutual-capacitance method, and the like. The mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible. Note that a touch sensor such as a resistive film method, an ultrasonic method, or an optical method may also be used. In one aspect of the present invention, for example, a capacitive touch sensor can be applied. As the capacitive method, there are a surface capacitive method, a projected capacitive method, and the like. As the projected capacitive method, there are a self-capacitance method, a mutual-capacitance method, and the like. The mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible. Note that a touch sensor such as a resistive film method, an ultrasonic method, or an optical method may also be used.

[0088] In addition, in one aspect of the present invention, an active matrix method or a passive matrix method can be used for the touch sensor.

[0089] In addition, for details of the display panel 11, reference can be made to Specific Example 2 of Embodiment 4.

[0090] Note that the display panel and display element included in the touch panel according to one aspect of the present invention are not particularly limited. In this embodiment, a light-emitting element is described as an example of the display element. However, the display panel according to one aspect of the present invention may be a panel or device using other display elements or light-emitting elements.

[0091] In this specification and the like, the display element, the display device which is a device having the display element, the light-emitting element, and the light-emitting device which is a device having the light-emitting element can use various forms or have various elements. The display element, the display device, the light-emitting element, or the light-emitting device can be, for example, an EL element (an EL element including organic and inorganic substances, an organic EL element, an inorganic EL element), an LED (a white LED, a red LED, a green LED, a blue LED, etc.), a transistor (a transistor that emits light according to current), an electron-emitting element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro-shutter), an interference modulation (IMOD) element, a shutter-type MEMS display element, an optical interference-type MEMS display element, an electro-wetting element, a piezoelectric ceramic display, or a display element using a carbon nanotube. In addition to these, the coil has at least one of the following functions: The EL element may have a display medium whose contrast, brightness, reflectance, transmittance, etc. change. An example of a display device using electron-emitting devices is an EL display. An example of such a display device is a field emission display (FED) or SED. Type Flat Panel Display (SED: Surface-conduction Elect A type of display device that uses liquid crystal elements. Examples include liquid crystal displays (transmissive liquid crystal displays, semi-transmissive liquid crystal displays, There are various types of LCD displays, such as reflective LCD displays, direct-view LCD displays, and projection LCD displays. This is an example of a display device using electronic ink, electronic liquid powder (registered trademark), or electrophoretic elements. Examples of such displays include electronic paper. When realizing a play, a part or all of the pixel electrodes have a function as a reflective electrode. For example, a part or the whole of the pixel electrode may be made of aluminum, silver, etc. In this case, a memory circuit such as an SRAM may be provided under the reflective electrode. This makes it possible to further reduce power consumption.

[0092] For example, in this specification, a pixel having an active element (active element, nonlinear element) Uses an active matrix system or a passive matrix system that does not have active elements in the pixels. There can be.

[0093] In the active matrix method, various active elements, not just transistors, are used. An active element can be used. For example, it is also possible to use MIM (Metal Insulator Metal), or TFD (Thin Film Diode), etc. Since these elements have fewer manufacturing steps, it is possible to reduce the manufacturing cost or improve the yield. Or, since the size of these elements is small, the aperture ratio can be improved, and low power consumption and high brightness can be achieved. Since the passive matrix method does not use an active element, the manufacturing process is less, and the manufacturing cost can be reduced or the yield can be improved. Or, since it does not use an active element, the aperture ratio can be improved, and low power consumption or high brightness can be achieved.

[0094] Here, examples of performing various displays using a display device have been shown, but one aspect of the present invention is not limited to this. For example, it may not display information. As an example, instead of a display device, it may be used as a lighting device. By applying it to a lighting device, it can be utilized as an interior with excellent design. Or, it can be utilized as lighting that can illuminate in various directions. Or, instead of a display device,

[0095] it may be used as a light source such as a backlight or a front light. That is, it may be utilized as a lighting device for a display panel. As described above, one aspect of the present invention is a flexible touch panel in which a flexible display panel and a flexible touch sensor are bonded together with an adhesive layer. By setting the Young's modulus of the adhesive layer to be 1 kPa or more and 300 kPa or less, it is resistant to repeated bending and has a detection sensitivity.

[0096] This makes it possible to realize a high-performance touch panel.

[0097] This embodiment mode can be combined with other embodiment modes as appropriate.

[0098] (Embodiment 2) In this embodiment, a touch sensor according to one embodiment of the present invention will be described.

[0099] FIG. 4 shows a touch sensor 112, which is a projected capacitive touch sensor. 5 is a cross-sectional view taken along line CD and line EF in FIG.

[0100] The touch sensor 112 includes a plurality of electrodes 321 between a flexible substrate 301 and a flexible substrate 302. and a plurality of electrodes 322. The electrodes 321 are electrically connected to any of the plurality of wirings 311. The electrode 322 is electrically connected to one of the wirings 312. The wiring 312 extends to the outer periphery of the flexible substrate 301 and is electrically connected to the FPC 305. To be continued.

[0101] The electrode 321 has a shape that extends in one direction. The two electrodes 322 sandwiching the electrode 321 are arranged so as to cross the electrode 321. The wiring 323 and the electrode 321 are electrically connected to each other through a dielectric A layer 324 is provided to form a capacitance. The touch sensor 112 is connected to the A plurality of electrodes 322 electrically connected to each other are arranged in one direction, and a plurality of electrodes 322 are arranged in one direction. By arranging a plurality of electrodes 321 in the direction of insertion, a plurality of capacitances are arranged in a matrix. The configuration is arranged as follows.

[0102] In addition, the electrodes 321, 322, and the wiring 323 preferably have translucency. Here as shown in FIG. 4, the electrodes 321 and 322 are preferably arranged in a shape such that as little gap as possible is generated between them. Further, a dummy electrode including the same conductive film as the electrodes 321, 322 , or the wiring 323 may be provided in these gaps. In this way, by minimizing the gap between the electrodes 3 21 and 322, unevenness in transmittance can be reduced. As a result, unevenness in the luminance of the light transmitted through the touch sensor 112 can be reduced.

[0103] Examples of the translucent conductive material include indium oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO). , indium zinc oxide, conductive oxides such as indium tin oxide added with silicon oxide, zinc oxide added with gallium, or graphene can be used. After forming a film of the translucent conductive material on the substrate by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the electrodes 321, 322, and the wiring 323. Graphene can be formed by reducing a solution in which graphene oxide is dispersed after coating, in addition to the CVD method.

[0104]

[0105] In addition, the wiring 312 is electrically connected to the electrode 322. The wiring 312 is provided on the outer peripheral portion of the flexible substrate 301 such that its surface is exposed, and is connected to the FPC 305 via the connector 355. It can be electrically connected. Note that the wiring 311 that is electrically connected to the electrode 321 may have the same configuration.

[0106] As the wiring 311 and the wiring 312, for example, metal materials such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or alloy materials containing the metal material can be used.

[0107] As the connector 355, an anisotropic conductive film (ACF: Anisotropic Con ductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0108] In the configuration example shown in FIG. 5(A), the electrodes 321 and 322 are formed on the insulating layer 320. Further, the flexible substrate 301 and the insulating layer 320 are adhered via an adhesive layer 331. Also, the flexible substrate 302 and the flexible substrate 301 provided with electrodes and the like are adhered by an adhesive layer 332.

[0109] The adhesive layer 331 and the adhesive layer 332 have light transmissivity. For the adhesive layer 331 and the adhesive layer 332, for example, a thermosetting resin or an ultraviolet curable resin can be used. Specifically, resins such as acrylic, urethane, epoxy, or a resin having a siloxane bond can be used.

[0110] Further, it is preferable that a protective layer 335 is provided on the surface of the flexible substrate 302. The protective layer 335 can also be called a ceramic coat and has a function of protecting the surface of the flexible substrate 302 when operating the touch sensor 1 12 with a finger or a stylus, etc. In particular, the exterior member This is suitable when the is not provided. The protective layer 335 can be made of an inorganic insulating material such as silicon oxide, aluminum oxide, yttrium oxide, yttria-stabilized zirconia (YSZ), etc. The protective layer 335 can be formed by sputtering, sol-gel method, or the like. In particular, when the protective layer 335 is formed using the aerosol deposition method, it is preferable because a film with high density can be formed at a low temperature, and the mechanical strength can be enhanced. The protective layer 335 can be formed by sputtering, sol-gel method, or the like. In particular, when the protective layer 335 is formed using the aerosol deposition method, it is preferable because a film with high density can be formed at a low temperature, and the mechanical strength can be enhanced. The protective layer 335 can be formed by sputtering, sol-gel method, or the like. In particular, when the protective layer 335 is formed using the aerosol deposition method, it is preferable because a film with high density can be formed at a low temperature, and the mechanical strength can be enhanced. The protective layer 335 can be formed by sputtering, sol-gel method, or the like. In particular, when the protective layer 335 is formed using the aerosol deposition method, it is preferable because a film with high density can be formed at a low temperature, and the mechanical strength can be enhanced.

[0111] The protective layer 335 may be provided at least on the touch surface side. In FIG. 5(A), the case where the protective layer 335 is provided on the surface of the flexible substrate 302 is shown, but it may also be provided on the surface of the flexible substrate 301. The protective layer 335 may be provided at least on the touch surface side. In FIG. 5(A), the case where the protective layer 335 is provided on the surface of the flexible substrate 302 is shown, but it may also be provided on the surface of the flexible substrate 301. The protective layer 335 may be provided at least on the touch surface side. In FIG. 5(A), the case where the protective layer 335 is provided on the surface of the flexible substrate 302 is shown, but it may also be provided on the surface of the flexible substrate 301.

[0112] Moreover, a configuration without providing the adhesive layer 331 may be adopted. FIG. 5(B) shows a configuration in which an insulating layer 320 is provided on the upper surface of the flexible substrate 301. Further, FIG. 5(C) shows a configuration without providing the insulating layer 320, and electrodes 321, 322, etc. are provided on the flexible substrate 301. Moreover, a configuration without providing the adhesive layer 331 may be adopted. FIG. 5(B) shows a configuration in which an insulating layer 320 is provided on the upper surface of the flexible substrate 301. Further, FIG. 5(C) shows a configuration without providing the insulating layer 320, and electrodes 321, 322, etc. are provided on the flexible substrate 301. Moreover, a configuration without providing the adhesive layer 331 may be adopted. FIG. 5(B) shows a configuration in which an insulating layer 320 is provided on the upper surface of the flexible substrate 301. Further, FIG. 5(C) shows a configuration without providing the insulating layer 320, and electrodes 321, 322, etc. are provided on the flexible substrate 301. Moreover, a configuration without providing the adhesive layer 331 may be adopted. FIG. 5(B) shows a configuration in which an insulating layer 320 is provided on the upper surface of the flexible substrate 301. Further, FIG. 5(C) shows a configuration without providing the insulating layer 320, and electrodes 321, 322, etc. are provided on the flexible substrate 301.

[0113] FIG. 6(C) shows a configuration example different from the configurations shown in FIGS. 5(A) to (C). Note that FIGS. 6(A) and (B) are also used to show an example of the manufacturing method. FIG. 6(C) shows a configuration example different from the configurations shown in FIGS. 5(A) to (C). Note that FIGS. 6(A) and (B) are also used to show an example of the manufacturing method.

[0114] After forming a layer to be peeled on the manufacturing substrate, the layer to be peeled can be peeled from the manufacturing substrate and transferred to another substrate. According to this method, for example, a layer to be peeled formed on a manufacturing substrate with high heat resistance can be transferred to a substrate with low heat resistance. Therefore, the manufacturing temperature of the layer to be peeled is not limited by the substrate with low heat resistance. After forming a layer to be peeled on the manufacturing substrate, the layer to be peeled can be peeled from the manufacturing substrate and transferred to another substrate. According to this method, for example, a layer to be peeled formed on a manufacturing substrate with high heat resistance can be transferred to a substrate with low heat resistance. Therefore, the manufacturing temperature of the layer to be peeled is not limited by the substrate with low heat resistance. After forming a layer to be peeled on the manufacturing substrate, the layer to be peeled can be peeled from the manufacturing substrate and transferred to another substrate. According to this method, for example, a layer to be peeled formed on a manufacturing substrate with high heat resistance can be transferred to a substrate with low heat resistance. Therefore, the manufacturing temperature of the layer to be peeled is not limited by the substrate with low heat resistance. After forming a layer to be peeled on the manufacturing substrate, the layer to be peeled can be peeled from the manufacturing substrate and transferred to another substrate. According to this method, for example, a layer to be peeled formed on a manufacturing substrate with high heat resistance can be transferred to a substrate with low heat resistance. Therefore, the manufacturing temperature of the layer to be peeled is not limited by the substrate with low heat resistance.

[0115] First, a release layer 393 is formed on a production substrate 391, and a layer to be released is formed on the release layer 393. . As the layer to be released, an insulating layer 320, electrodes 321 and 322, wiring 312, a dielectric layer 32 4, wiring 323, an insulating layer 395, an adhesive layer 332, and a flexible substrate 302 are formed (FIG. 6 (A)).

[0116] The insulating layer 395 is a layer that functions as a protective layer for the touch sensor. In one aspect of the present invention, it is preferable to provide the insulating layer 395, but it may not be provided if it is not necessary. As the insulating layer 395 , an inorganic insulating film or an organic insulating film may be used. For example, a silicon oxynitride film or an acryl film can be mentioned. The film thickness of the insulating layer 395 may be, for example, 500 nm or more and 2000 nm or less. In addition, inorganic materials and organic materials that can be used for other insulating layers may be applied , and the film thickness is not limited to the above.

[0117] Then, using the release layer 393, the production substrate 391 and the layer to be released are separated (FIG. 6(B)) .

[0118] Then, the exposed insulating layer 320 and the flexible substrate 301 are bonded together using the adhesive layer 331 (FIG. 6(C)). Also, a part of the flexible substrate 302 and the adhesive layer 332 is removed to expose the wiring 312. For example, the wiring 312 may be exposed by dissolving the resin contained in the substrate. And then, the wiring 312, the connector 355, and the FPC 305 are electrically connected .

[0119] Thus, a touch sensor having the configuration shown in FIG. 6(C) can be manufactured. Regarding the method of transposing the layer to be released from the production substrate to another substrate using the release layer, the content detailed in Embodiment 3 can be referred to.

[0120] This embodiment can be appropriately combined with other embodiments.

[0121] (Embodiment 3) In this embodiment, a touch sensor according to one aspect of the present invention will be described.

[0122] FIG. 7 is a diagram for explaining the configuration of a touch sensor 100 according to one aspect of the present invention, and FIG. 8 is a diagram for explaining the configuration of a touch sensor 100B according to one aspect of the present invention.

[0123] FIG. 7(A) is a block diagram for explaining the configuration of a touch sensor 100 according to one aspect of the present invention. FIG. 7(B) is a circuit diagram for explaining the configuration of the converter CONV and the detection unit 10U. FIG 7(C) and FIG. 7(D) are timing charts for explaining the driving method of the touch sensor 100 .

[0124] FIG. 8(A) is a block diagram for explaining the configuration of a touch sensor 100B according to one aspect of the present invention . FIG. 8(B) is a circuit diagram for explaining the configuration of the converter CONV and the detection unit 10UB . FIG. 8(C) is a timing chart for explaining the driving method of the touch sensor 100B.

[0125] <Example Configuration 1 of Touch Sensor> The touch sensor 100 described in this embodiment includes a detection unit 10U, a scanning line G1, a signal line DL, and a flexible substrate 16 (FIG. 7(A)). A plurality of detection units 10U are arranged in an n row m column (n and m are natural numbers of 1 or more) matrix. The scanning line G1 is electrically connected to a plurality of detection units 10U arranged in the row direction. The signal line DL is electrically connected to a plurality of detection units 10U arranged in the column direction. Also, a drive circuit GD and a converter It may have a converter CONV. Using transistors that can be formed in the same process, a plurality of detection units 10U, drive circuits GD, and converters CONV can be configured.

[0126] Note that the detection unit 10U includes a detection element C, and the first electrode of the detection element C is electrically connected to the wiring CS. Thereby, the potential of the first electrode of the detection element C can be controlled using the control signal supplied by the wiring CS.

[0127] The detection unit 10U includes a first transistor M1 whose gate is electrically connected to the second electrode of the detection element C and whose first electrode is electrically connected to the wiring VPI (FIG. 7(B)). The wiring VPI can supply, for example, a ground potential.

[0128] Also, a configuration may be adopted in which a second transistor M2 is provided, whose gate is electrically connected to the scanning line G1, whose first electrode is electrically connected to the second electrode of the first transistor M1, and whose second electrode is electrically connected to the signal line DL. The scanning line G1 can supply, for example, a selection signal. The signal line DL can supply, for example, a detection signal DATA.

[0129] Also, a configuration may be adopted in which a third transistor M3 is provided, whose gate is electrically connected to the wiring RES, whose first electrode is electrically connected to the second electrode of the detection element C, and whose second electrode is electrically connected to the wiring VRES. The wiring RES can supply a reset signal. The wiring VRES can supply, for example, a potential that can turn on the first transistor M1.

[0130] The capacitance of the detection element C changes, for example, when an object approaches the first electrode or the second electrode, or when the distance between the first electrode and the second electrode changes. Accordingly, the detection unit 10U can supply a detection signal DATA TA based on the change in the capacitance of the detection element C or the magnitude of the parasitic capacitance.

[0131] In addition, the detection unit 10U includes a wiring CS that can supply a control signal for controlling the potential of the first electrode of the detection element C. Note that the first electrode of the detection element C and the wiring CS may be on the same layer.

[0132] Note that a node where the second electrode of the detection element C, the gate of the first transistor M1, and the first electrode of the third transistor M3 are electrically connected is referred to as node A.

[0133] The wiring VRES can supply a predetermined potential. For example, a potential for turning on a transistor included in the detection unit 10U can be supplied to the gate of the transistor. The wiring VPI can supply, for example, a ground potential, and the wirings VPO and BR can supply, for example, a high power supply potential.

[0134] In addition, the wiring RES can supply a reset signal, the scanning line G1 can supply a selection signal, and the wiring CS can supply a control signal for controlling the potential of the first electrode of the detection element C.

[0135] In addition, the signal line DL can supply the detection signal DATA, and the terminal OUT can supply a signal converted based on the detection signal DATA.

[0136] ​​​​​​​​The drive circuit GD can be composed of logic circuits using various circuits. For example, a shift register can be applied. The converter CONV includes a conversion circuit. The converter CONV can use various circuits that can convert the detection signal DATA and supply it to the terminal OUT. For example, by electrically connecting the converter CONV to the detection unit 10U, a source follower circuit or a current mirror circuit may be configured. Specifically, a source follower circuit can be configured using the converter CONV using the transistor M4 (see FIG. 7(B)). Note that a transistor that can be fabricated in the same process as the first transistor M1 to the third transistor M3 may be used as the transistor M4. Also, the first transistor M1 to the third transistor M3 have a semiconductor layer. For example,

[0137] an element of Group 4, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide semiconductor containing indium can be applied. A driving method of the touch sensor according to an aspect of the present invention will be described.

[0138] <First Step> In the first step, after turning on the third transistor M3, a reset signal that turns it off is supplied to the gate to set the potential of the second electrode of the detection element C to a predetermined potential ( see FIG. 7(C), period T1). Specifically, the reset signal is supplied to the wiring RES. After the reset signal is supplied, the third

[0139] transistor...

[0140] 《First Step》 In the first step, after turning on the third transistor M3, a reset signal that turns it off is supplied to the gate to set the potential of the second electrode of the detection element C to a predetermined potential ( see FIG. 7(C), period T1). Specifically, the reset signal is supplied to the wiring RES. After the reset signal is supplied, the third

[0141] transistor... The transistor M3 sets the potential of node A to a potential that can turn on, for example, the first transistor M1. (see Fig. 7(B)).

[0142] 《Second Step》 In the second step, a selection signal for turning on the second transistor M2 is supplied to the gate, and the second electrode of the first transistor M1 is electrically connected to the signal line DL.

[0143] Specifically, a selection signal is supplied to the scanning line G1. The second transistor M2 to which the selection signal is supplied electrically connects the second electrode of the first transistor M1 to the signal line DL (see period T2 in Fig. 7(C)).

[0144] 《Third Step》 In the third step, a control signal is supplied to the first electrode of the sensing element C, and a potential that changes based on the control signal and the capacitance of the sensing element C is supplied to the gate of the first transistor M1.

[0145] Specifically, a rectangular control signal is supplied to the wiring CS. The sensing element C to which the rectangular control signal is supplied to the first electrode raises the potential of node A based on the capacitance of the sensing element C (see the second half of period T2 in Fig. 7( C)).

[0146] For example, when the sensing element C is placed in the air, if something with a higher dielectric constant than air is placed close to the first electrode of the sensing element C, the capacitance of the sensing element C appears to increase.

[0147] As a result, the change in the potential of node A caused by the rectangular control signal becomes smaller compared to the case where nothing with a higher dielectric constant than air is placed close by (see the solid line in Fig. 7(D)).

[0148] 《Fourth Step》 In the fourth step, a signal resulting from a change in the potential of the gate of the first transistor M1 is supplied to the signal line DL.

[0149] For example, a current that changes based on the change brought about in the potential of the gate of the first transistor M1 is supplied to the signal line DL.

[0150] The converter CONV converts the change in the current flowing through the signal line DL into a change in voltage and outputs the voltage .

[0151] 《Fifth Step》 In the fifth step, a selection signal for turning the second transistor M2 off is supplied to the gate .

[0152] Thereafter, for the scanning lines G1(1) to G1(n), the first step to the fifth step are repeated for each scanning line.

[0153] <Configuration Example 2 of Touch Sensor> The touch sensor 100B described in this embodiment is different from the touch sensor 100 described with reference to FIG. 7 in that it includes a detection unit 10UB instead of the detection unit 10U.

[0154] The detection unit 10UB is different from the detection unit 10U in the following points. The first electrode of the detection element C that is electrically connected to the wiring CS in the detection unit 10U is electrically connected to the scanning line G1 in the detection unit 10U B. The second electrode of the first transistor M1 that is electrically connected to the signal line DL via the second transistor M2 in the detection unit 10U is directly connected to the signal line without passing through the second transistor M2 in the detection unit 10UB . It is electrically connected to the DL. Here, a configuration different from that of the detection unit 10U will be described in detail, and parts that can use the same configuration as the detection unit 10U will refer to the above description. The touch sensor 100B includes a detection unit 10UB, a scanning line G1, a signal line DL, and a flexible substrate 16 (FIG. 8(A)). A plurality of detection units 10UB are arranged in an n-row and m-column (n and m are natural numbers of 1 or more) matrix. The scanning line G1 is electrically connected to a plurality of detection units 10UB arranged in the row direction. The signal line DL is electrically connected to a plurality of detection units 10UB arranged in the column direction. Note that the detection unit 10UB includes a detection element C, and the first electrode of the detection element C is electrically connected to the scanning line G1. Thereby, the potential of the first electrode of the detection element C can be controlled for each of the plurality of detection units 10UB electrically connected to the selected one scanning line G1 using a selection signal.

[0155] The touch sensor 100B includes a detection unit 10UB, a scanning line G1, a signal line DL, and a flexible substrate 16 (FIG. 8(A)). A plurality of detection units 10UB are arranged in an n-row and m-column (n and m are natural numbers of 1 or more) matrix. The scanning line G1 is arranged in the row direction and is electrically connected to a plurality of detection units 10UB. The signal line DL is arranged in the column direction and is electrically connected to a plurality of detection units 10UB.

[0156] Note that the detection unit 10UB includes a detection element C, and the first electrode of the detection element C is electrically connected to the scanning line G1. Thereby, the potential of the first electrode of the detection element C can be controlled for each of the plurality of detection units 10UB electrically connected to the selected one scanning line G1 using a selection signal. The potential of the first electrode of the detection element C can be controlled for each of the plurality of detection units 10UB electrically connected to the selected one scanning line G1 using a selection signal. using a selection signal.

[0157] In addition, wiring formed using a conductive film that can be formed using the same process as the signal line DL can be used for the scanning line G1. Wiring formed using a conductive film that can be formed using the same process as the signal line DL can be used for the scanning line G1.

[0158] In addition, wiring formed using a conductive film that can be formed using the same process as the first electrode of the detection element C may be used for the scanning line G1. For example, the first electrodes of the detection elements C included in the detection units 10UB adjacent in the row direction can be connected, and the connected first electrodes can be used for the scanning line G1. In addition, wiring formed using a conductive film that can be formed using the same process as the first electrode of the detection element C may be used for the scanning line G1. For example, the first electrodes of the detection elements C included in the detection units 10UB adjacent in the row direction can be connected, and the connected first electrodes can be used for the scanning line G1. The first electrodes of the detection elements C included in the detection units 10UB adjacent in the row direction can be connected, and the connected first electrodes can be used for the scanning line G1. The first electrodes of the detection elements C included in the detection units 10UB adjacent in the row direction can be connected, and the connected first electrodes can be used for the scanning line G1.

[0159] The detection unit 10UB has a gate electrically connected to the second electrode of the detection element C, and the first Comprising a first transistor M1 in which an electrode is electrically connected to a wiring VPI (FIG. 8(B)) .

[0160] Also, a third transistor may be provided in a configuration in which a gate is electrically connected to a wiring RES, a first electrode is electrically connected to a second electrode of a detection element C, and a second electrode is electrically connected to a wiring VRES M3.

[0161] A method for driving a touch sensor according to an aspect of the present invention will be described.

[0162] <<First Step>> In the first step, after turning on the third transistor M3, a reset signal that turns it off is supplied to the gate to set the potential of the second electrode of the detection element C to a predetermined potential ( See FIG. 8(C), period T1).

[0163] Specifically, the reset signal is supplied to the wiring RES. The third transistor M3 to which the reset signal is supplied sets the potential of the node A to a potential that can turn on the first transistor M1, for example (FIG. 8(B)).

[0164] <<Second Step>> In the second step, a selection signal is supplied to the first electrode of the detection element C, and a potential that changes based on the selection signal and the capacitance of the detection element C is supplied to the gate of the first transistor M1 ( See FIG. 8(C), period T2).

[0165] Specifically, a rectangular selection signal is supplied to the scanning line G1(i - 1). The detection element C to which the rectangular selection signal is supplied to the first electrode raises the potential of the node A based on the capacitance of the detection element C .

[0166] ​​​​​​ For example, when the detection element C is placed in the air, if something with a higher dielectric constant than air is placed close to the first electrode of the detection element C, the capacitance of the detection element C will apparently increase. As a result, the change in the potential of node A caused by the rectangular selection signal will be smaller than when there is no object with a higher dielectric constant than air placed close by.

[0167] This causes the change in the potential of node A brought about by the rectangular selection signal to be smaller compared to the case where there is no object with a higher dielectric constant than air placed close by. This causes the change in the potential of node A brought about by the rectangular selection signal to be smaller compared to the case where there is no object with a higher dielectric constant than air placed close by.

[0168] 《The Third Step》 In the third step, a signal caused by the change in the potential of the gate of the first transistor M1 is supplied to the signal line DL. Supply it to the signal line DL.

[0169] For example, a current that changes based on the change brought about in the potential of the gate of the first transistor M1 is supplied to the signal line DL. Supply a current that changes based on the change brought about in the potential of the gate of the first transistor M1 to the signal line DL.

[0170] The converter CONV converts the change in the current flowing through the signal line DL into a change in voltage, and the terminal OUT outputs this voltage. Output this voltage.

[0171] Thereafter, for the scanning lines G1(1) to G1(n), the first step to the third step are repeated for each scanning line (see periods T2 to T4 in Fig. 8(C)). Repeat the first step to the third step for each scanning line (see periods T2 to T4 in Fig. 8(C)).

[0172] This embodiment can be appropriately combined with other embodiments.

[0173] (Embodiment 4) In this embodiment, a display panel according to one aspect of the present invention and a method for manufacturing the display panel will be described. Describe it.

[0174] Hereinafter, a light-emitting device using an organic EL element, which can be used as a display panel according to one aspect of the present invention, will be exemplified. Exemplify a light-emitting device using an organic EL element.

[0175] <Specific Example 1> Fig. 9(A) shows a plan view of the light-emitting device, and a cross-section between the dashed-dotted lines A1 - A2 in Fig. 9(A). An example of the figure is shown in Fig. 9(C). The light-emitting device shown in Specific Example 1 is a top-emission type light-emitting device using a color filter method. In this embodiment, the light-emitting device may have, for example, a configuration in which one color is represented by three sub-pixels of R (red), G (green), and B (blue), or a configuration in which one color is represented by four sub-pixels of R (red), G (green), B (blue), and W (white), or a configuration in which one color is represented by four sub-pixels of R (red), G (green), B (blue), and Y (yellow). There is no particular limitation on the color elements, and colors other than RGBWY may be used. For example, it may be composed of cyan, magenta, etc. There is no particular limitation on the color elements, and colors other than RGBWY may be used. For example, it may be composed of cyan, magenta, etc.

[0176] The light-emitting device shown in Fig. 9(A) has a light-emitting part 804, a drive circuit part 806, and an FPC 808. The light-emitting elements and transistors included in the light-emitting part 804 and the drive circuit part 806 are sealed by a substrate 801, a substrate 803, and an adhesive layer 823.

[0177] The light-emitting device shown in Fig. 9(C) has a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, an overcoat 849, a coloring layer 845, a light-shielding layer 847, an insulating layer 843, an adhesive layer 841, and a substrate 803. The adhesive layer 823, the overcoat 849, the insulating layer 843, the adhesive layer 841, and the substrate 803 transmit visible light. The adhesive layer 823, the overcoat 849, the insulating layer 843, the adhesive layer 841, and the substrate 803 transmit visible light.

[0178] The light-emitting part 804 has a transistor 820 and a light-emitting element 830 on the substrate 801 via the adhesive layer 811 and the insulating layer 813. The light-emitting element 830 has a lower electrode 831 on the insulating layer 817. and an EL layer 833 on the lower electrode 831 and an upper electrode 835 on the EL layer 833 . The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820 . The end portion of the lower electrode 831 is covered with the insulating layer 821. The lower electrode 831 preferably reflects visible light . The upper electrode 835 transmits visible light.

[0179] In addition, the light-emitting portion 804 includes a coloring layer 845 overlapping with the light-emitting element 830 and a light-shielding layer 847 overlapping with the insulating layer 821 . The coloring layer 845 and the light-shielding layer 847 are covered with an overcoat 849 . The space between the light-emitting element 830 and the overcoat 849 is filled with an adhesive layer 823 .

[0180] The insulating layer 815 has the effect of suppressing the diffusion of impurities into the semiconductor constituting the transistor . Further, it is preferable to select an insulating layer having a planarizing function for reducing surface irregularities caused by the transistor as the insulating layer 817 .

[0181] The drive circuit portion 806 has a plurality of transistors on the substrate 801 via the adhesive layer 811 and the insulating layer 813 . In FIG. 9(C), one of the transistors included in the drive circuit portion 806 is shown .

[0182] The insulating layer 813 and the substrate 801 are bonded together by the adhesive layer 811. Also, the insulating layer 8 43 and the substrate 803 are bonded together by the adhesive layer 841. Using a film with high moisture resistance for the insulating layer 813 or the insulating layer 8 43 can suppress the intrusion of impurities such as water into the light-emitting element 830 and the transistor 820, and is preferable because the reliability of the light-emitting device is improved .

[0183] The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal (such as a video signal, a clock signal, a start signal, or a reset signal) or a potential to the driving circuit section 806. Here, an example is shown in which an FPC 808 is provided as the external input terminal. To prevent an increase in the number of processes, it is preferable that the conductive layer 857 be formed of the same material and in the same process as the electrodes and wirings used in the light-emitting section and the driving circuit section. Here, an example is shown in which the conductive layer 857 is formed of the same material and in the same process as the electrode constituting the transistor 820.

[0184] In the light-emitting device shown in FIG. 9(C), the FPC 808 is located on the substrate 803. The connection body 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the adhesive layer 823, the insulating layer 817, and the insulating layer 815. Further, the connection body 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connection body 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened ( or a substrate having an opening is used), whereby the conductive layer 857, the connection body 825, and the FPC 808 can be electrically connected.

[0185] <Specific Example 2> FIG. 9(B) shows a plan view of the light-emitting device, and an example of a cross-sectional view between the dashed-dotted lines A3 - A4 in FIG. 9(B) is shown in FIG. 9(D). The light-emitting device shown in Specific Example 2 is a top emission type light-emitting device using a color filter method, which is different from Specific Example 1. Here, only the points different from Specific Example 1 will be described in detail, and the points common to Specific Example 1 will be omitted from the description.

[0186] The light-emitting device shown in FIG. 9(D) is different from the light-emitting device shown in FIG. 9(C) in the following points. ​​​​​​​

[0187] The light-emitting device shown in FIG. 9(D) has a spacer 827 on the insulating layer 821. By providing the spacer 8 27, the distance between the substrate 801 and the substrate 803 can be adjusted.

[0188] Also, in the light-emitting device shown in FIG. 9(D), the sizes of the substrate 801 and the substrate 803 are different. The FPC 808 is located on the insulating layer 843 and does not overlap with the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the insulating layer 8 43, the adhesive layer 823, the insulating layer 817, and the insulating layer 815. Since there is no need to provide an opening in the substrate 803, the material of the substrate 803 is not limited.

[0189] <Specific Example 3> FIG. 10(A) shows a plan view of the light-emitting device, and an example of a cross-sectional view between the dashed-dotted line A5 - A6 in FIG. 10(A) is shown in FIG. 10(C). The light-emitting device shown in Specific Example 3 is a top-emission type light-emitting device using a painting method.

[0190] The light-emitting device shown in FIG. 10(A) has a light-emitting portion 804, a drive circuit portion 806, and an FPC808. The light-emitting elements and transistors included in the light-emitting portion 804 and the drive circuit portion 806 are sealed by the substrate 801 , the substrate 803, the frame-shaped adhesive layer 824, and the adhesive layer 823.

[0191] The light-emitting device shown in FIG. 10(C) has a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors , a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821 , an adhesive layer 823, a frame-shaped adhesive layer 824, and a substrate 803. The adhesive layer 823 and the substrate 803 transmit visible light.

[0192] ​​​The frame-shaped adhesive layer 824 is preferably a layer with higher moisture resistance than the adhesive layer 823. This can suppress the intrusion of impurities such as moisture from the outside into the light-emitting device. Therefore, a highly reliable light-emitting device can be realized.

[0193] In Specific Example 3, the light emission of the light-emitting element 830 is extracted from the light-emitting device through the adhesive layer 823 . Therefore, the adhesive layer 823 preferably has higher light transmittance than the frame-shaped adhesive layer 824 . Also, the adhesive layer 823 preferably has a higher refractive index than the frame-shaped adhesive layer 824. Further, the adhesive layer 823 preferably has a smaller volume shrinkage during curing than the frame-shaped adhesive layer 824 .

[0194] The light-emitting unit 804 has a transistor 8 20 and a light-emitting element 830 on the substrate 801 via the adhesive layer 811 and the insulating layer 813. The light-emitting element 830 has a lower electrode 831 on the insulating layer 817, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833 . The lower electrode 831 is electrically connected to the source electrode or drain electrode of the transistor 820 . The end of the lower electrode 831 is covered with the insulating layer 821. The lower electrode 831 preferably reflects visible light . The upper electrode 835 transmits visible light.

[0195] The drive circuit unit 806 has a plurality of transistors on the substrate 801 via the adhesive layer 811 and the insulating layer 813 . In FIG. 10(C), one of the transistors included in the drive circuit unit 806 is shown .

[0196] The insulating layer 813 and the substrate 801 are bonded together by the adhesive layer 811. On the insulating layer 813 When a film with high moisture resistance is used, the intrusion of impurities such as water into the light-emitting element 830 and the transistor 820 can be suppressed, which is preferable because the reliability of the light-emitting device is improved. This is preferable because it can suppress the intrusion of impurities such as water into the light-emitting element 830 and the transistor 820, and improve the reliability of the light-emitting device.

[0197] The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal or potential to the drive circuit unit 806. Here, an example in which the FPC 808 is provided as the external input terminal is shown. Also, here, an example is shown in which the conductive layer 857 is formed of the same material as the electrode constituting the transistor 820 and is formed in the same process. In the light-emitting device shown in FIG. 10(C), the FPC 808 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825.

[0198] In the light-emitting device shown in FIG. 10(C), the FPC 808 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. In the light-emitting device shown in FIG. 10(C), the FPC 808 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825.

[0199] <Specific Example 4> A plan view of the light-emitting device is shown in FIG. 10(B), and an example of a cross-sectional view between the dashed-dotted lines A7-A8 in FIG. 10(B) is shown in FIG. 10(D). The light-emitting device shown in Specific Example 4 is a bottom-emission type light-emitting device using a color filter method. The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light. The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light.

[0200] The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light. The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light. The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light. The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light. The light-emitting device shown in FIG. 10(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 817b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light.

[0201] The light-emitting unit 804 has a transistor 820, a transistor 822, and a light-emitting element 830 on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light-emitting element 830 has a lower electrode 831 on the insulating layer 817b, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end portion of the lower electrode 831 is covered with the insulating layer 821. The upper electrode 835 preferably reflects visible light. The lower electrode 831 transmits visible light. The position where the coloring layer 845 overlapping the light-emitting element 830 is provided is not particularly limited. For example, it may be provided between the insulating layer 817a and the insulating layer 817b, between the insulating layer 815 and the insulating layer 817a, or the like.

[0202] The drive circuit unit 806 has a plurality of transistors on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 10(D), two of the transistors included in the drive circuit unit 806 are shown.

[0203] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. When a film with high moisture resistance is used for the insulating layer 813, it is possible to suppress the intrusion of impurities such as water into the light-emitting element 830, the transistors 820 and 822, which is preferable because the reliability of the light-emitting device is improved.

[0204] The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal or potential to the drive circuit unit 806. Here, an example in which an FPC 808 is provided as the external input terminal is shown. Also, here, an example in which the conductive layer 857 is formed of the same material and in the same process as the conductive layer 816 is shown. ​

[0205] <Specific Example 5> FIG. 10(E) shows an example of a light-emitting device different from Specific Examples 1 to 4.

[0206] The light-emitting device shown in FIG. 10(E) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a conductive layer 81 4, a conductive layer 857a, a conductive layer 857b, a light-emitting element 830, an insulating layer 821, an adhesive layer 823, and a substrate 803.

[0207] The conductive layer 857a and the conductive layer 857b are external connection electrodes of the light-emitting device and can be electrically connected to an FPC or the like.

[0208] The light-emitting element 830 includes a lower electrode 831, an EL layer 833, and an upper electrode 835. The end of the lower electrode 831 is covered with the insulating layer 821. The light-emitting element 830 is of the bottom emission type, the top emission type, or the dual emission type. The electrode, the substrate, the insulating layer, etc. on the side where light is extracted each transmit visible light. The conductive layer 814 is electrically connected to the lower electrode 831.

[0209] The substrate on the side where light is extracted may have, as a light extraction structure, a hemispherical lens, a microlens array, a film with an uneven structure, a light diffusion film, or the like. For example, by adhering the above lens or film onto a resin substrate using an adhesive or the like having the same refractive index as the substrate or the lens or film, a substrate having a light extraction structure can be formed thereby.

[0210] The conductive layer 814 is not necessarily provided, but it is preferably provided because it can suppress the voltage drop due to the resistance of the lower electrode 831. Also, for the same purpose, electrically​ The conductive layer to be connected can be provided on the insulating layer 821, on the EL layer 833, on the upper electrode 835, etc. It may be provided.

[0211] The conductive layer 814 can be formed of a single layer or by lamination using a material selected from copper, titanium, tantalum, tungsten, molybdenum, chromium, neodymium , scandium, nickel, aluminum, or an alloy material mainly composed of these. The film thickness of the conductive layer 814 can be, for example, 0.1 μm or more and 3 μm or less, preferably 0.1 μm or more and 0. 5 μm or less.

[0212] <Example of material> Next, materials that can be used in the light-emitting device will be described. Note that the description of the configurations described above in this specification may be omitted.

[0213] For the substrate, materials such as glass, quartz, organic resin, metal, and alloy can be used. The substrate on the side where light is extracted from the light-emitting element uses a material having light transmittance with respect to the light.

[0214] In particular, it is preferable to use a flexible substrate. For example, organic resin, glass, metal, or alloy having a thickness with flexibility can be used.

[0215] Since the organic resin has a smaller specific gravity than glass, using the organic resin as the flexible substrate can reduce the weight of the light-emitting device compared to the case of using glass, which is preferable.

[0216] It is preferable to use a material with high toughness for the substrate. This can realize a light-emitting device with excellent impact resistance and low breakage susceptibility. For example, an organic resin substrate, a thin metal substrate, or ​​​​By using an alloy substrate, it is lighter and less likely to be damaged compared to using a glass substrate. A light-emitting device can be realized.

[0217] Since metal materials and alloy materials have high thermal conductivity and can easily conduct heat throughout the substrate, local temperature rise of the light-emitting device can be suppressed, which is preferable. The thickness of the substrate made of a metal material or an alloy material is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less.

[0218] The material constituting the metal substrate or the alloy substrate is not particularly limited. For example, aluminum , copper, nickel, or an alloy of a metal such as an aluminum alloy or stainless steel can be preferably used.

[0219] In addition, when a material with a high heat emissivity is used for the substrate, it is possible to suppress the increase in the surface temperature of the light-emitting device and suppress the destruction and reliability degradation of the light-emitting device. For example, the substrate may have a laminated structure of a metal substrate and a layer with a high heat emissivity (for example, a metal oxide or a ceramic material can be used).

[0220] Examples of the material having flexibility and translucency include polyester resins such as polyethylene terephthalate (PET ), polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin , polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, poly styrene resin, polyamideimide resin, polyvinyl chloride resin, etc. In particular, it is preferable to use a material with a low coefficient of thermal expansion. For example, polyamideimide resin, polyimide resin Fats, PET, etc. can be suitably used. Also, a substrate (also called a prepreg) impregnated with resin in the fibrous body, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can be used. As such, it is also possible to use a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient. It is also possible to do so.

[0221] As the flexible substrate, a layer using the above materials may be laminated with a hard coat layer (for example, a silicon nitride layer, etc.) that protects the surface of the device from scratches, or a layer made of a material capable of dispersing pressure (for example, an aramid resin layer, etc.). For example, a layer using the above materials may be laminated with a hard coat layer (for example, a silicon nitride layer, etc.) that protects the surface of the device from scratches, or a layer made of a material capable of dispersing pressure (for example, an aramid resin layer, etc.). It may be configured by being laminated.

[0222] The flexible substrate can also be used by laminating a plurality of layers. In particular, when configured to have a glass layer, the barrier property against water and oxygen can be improved, and a highly reliable light-emitting device can be obtained. For example, a flexible substrate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closer to the light-emitting element can be used. The thickness of the glass layer is 20 μm or more and 200 μm or less, preferably 25 μm or more and 100 μm or less. A glass layer with such a thickness can simultaneously achieve a high barrier property and flexibility against water and oxygen. Also, the thickness of the organic resin layer is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer outside the glass layer, cracks and fractures in the glass layer can be suppressed, and the mechanical strength can be improved. By applying such a composite material of glass material and organic resin to the substrate, a highly reliable flexible light-emitting device can be obtained. It is possible to do so.

[0223] For example, a flexible substrate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closer to the light-emitting element can be used. The thickness of the glass layer is 20 μm or more and 200 μm or less, preferably 25 μm or more and 100 μm or less. A glass layer with such a thickness can simultaneously achieve a high barrier property and flexibility against water and oxygen. Also, the thickness of the organic resin layer is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer outside the glass layer, cracks and fractures in the glass layer can be suppressed, and the mechanical strength can be improved. By applying such a composite material of glass material and organic resin to the substrate, a highly reliable flexible light-emitting device can be obtained. It is possible to do so. It is possible to do so.

[0224] For the adhesive layer, a photocurable adhesive such as an ultraviolet curable type, a reaction curable adhesive, a thermosetting adhesive, a pressure-sensitive adhesive, etc. Various curable adhesives such as mold adhesives can be used. These adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins , PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA ( ethylene vinyl acetate) resins, etc. In particular, materials with low moisture permeability such as epoxy resins are preferred. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used .

[0225] Further, the above resin may contain a desiccant. For example, substances that adsorb moisture by chemical adsorption, such as oxides of alkaline earth metals (calcium oxide, barium oxide, etc.), can be used . Or, substances that adsorb moisture by physical adsorption, such as zeolite or silica gel, may be used . When a desiccant is included, it is possible to suppress the intrusion of impurities such as moisture into the functional element, which is preferable because the reliability of the light-emitting device is improved . Also, by mixing a filler with a high refractive index or a light-scattering member into the above resin, the light extraction efficiency from the light-emitting element can be improved

[0226] . For example, titanium oxide, barium oxide, zeolite, zirconium, etc. can be used . The structure of the transistor included in the light-emitting device is not particularly limited. The same configuration as the transistor used in the active matrix type touch sensor in the previous embodiment may be applied

[0227] . For example, it may be a staggered transistor or an inverse staggered transistor . Also, it may have any transistor structure of a top gate type or a bottom gate type . . The semiconductor material used for the transistor is not particularly limited, and examples thereof include silicon, germanium, etc. Or, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn-based metal oxide, may be used.

[0228] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0229] For stabilizing the characteristics of the transistor and the like, it is preferable to provide an underlayer film. As the underlayer film, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and it can be formed as a single layer or by lamination. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (plasma CVD method, thermal CVD method, MOCVD (Metal Organic CVD) method, etc.), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, etc. Note that the underlayer film may not be provided if not necessary. In each of the above-described configuration examples, the insulating layer 813 can also serve as the underlayer film of the transistor. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed. crystalline semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0230] As the light-emitting element, an element capable of self-emission can be used, and an element whose luminance is controlled by current or voltage is included in that category. For example, a light-emitting diode (LED), an organic EL element, an inorganic EL element, etc. can be used. As the light-emitting element, an element capable of self-emission can be used, and an element whose luminance is controlled by current or voltage is included in that category. For example, a light-emitting diode (LED), an organic EL element, an inorganic EL element, etc. can be used. As the light-emitting element, an element capable of self-emission can be used, and an element whose luminance is controlled by current or voltage is included in that category. For example, a light-emitting diode (LED), an organic EL element, an inorganic EL element, etc. can be used.

[0231] The light-emitting element may be any of a top emission type, a bottom emission type, and a dual emission type. For the electrode on the light extraction side, a conductive film that transmits visible light is used. Also, for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0232] Examples of the conductive film that transmits visible light include indium oxide, indium tin oxide (ITO: Indium Tin Oxide), indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. It can be formed using these materials. Also, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, alloys containing these metal materials, or nitrides of these metal materials (e.g., titanium nitride) can also be used by forming them thinly to have light-transmitting properties. Also, a laminated film of the above materials can be used as the conductive film. For example, using a laminated film of an alloy of silver and magnesium and ITO is preferable because it can enhance conductivity. Also, graphene or the like can be used.

[0233] Examples of the conductive film that reflects visible light include metal materials such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or alloys containing these metal materials. Also, rare earths such as lanthanum, neodymium, or germanium may be added to the above metal materials or alloys. Also, aluminum-containing alloys (aluminum alloys) such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium, alloys of silver and copper, alloys of silver, palladium, and copper, silver It can be formed using an alloy containing silver such as an alloy of silver and magnesium. An alloy containing silver and copper is preferable because of its high heat resistance. Further, by laminating a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of the materials for the metal film and the metal oxide film include titanium and titanium oxide. Further, a film composed of a conductive film that transmits visible light and a metal material may be laminated. For example, a laminated film of silver and ITO, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used. The electrodes may be formed using vapor deposition, sputtering, or the like. In addition, they can be formed using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method. When a voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode 831 and the upper electrode 835, holes are injected into the EL layer 833 from the anode side and electrons are injected from the cathode side. The injected electrons and holes recombine in the EL layer 833, and the light-emitting substance contained in the EL layer 833 emits light. The EL layer 833 has at least a light-emitting layer. As layers other than the light-emitting layer, the EL layer 833 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property). Either a low-molecular compound or a high-molecular compound can be used for the EL layer 833, and an inorganic material can also be used.

[0234] The electrodes may be formed respectively by using vapor deposition method, sputtering method, etc. Additionally, they can be formed by using a discharge method such as inkjet method, a printing method such as screen printing method, or plating method. When a voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode 831 and the upper electrode 835, holes are injected into the EL layer 833 from the anode side and electrons are injected from the cathode side. The injected electrons and holes recombine in the EL layer 833, and the light-emitting substance contained in the EL layer 833 emits light. It can be formed using an alloy containing silver such as an alloy of silver and magnesium. An alloy containing silver and copper is preferable because of its high heat resistance. Further, by laminating a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of the materials for the metal film and the metal oxide film include titanium and titanium oxide. Further, a film composed of a conductive film that transmits visible light and a metal material may be laminated. For example, a laminated film of silver and ITO, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0235] When a voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode 831 and the upper electrode 835, holes are injected into the EL layer 833 from the anode side and electrons are injected from the cathode side. The injected electrons and holes recombine in the EL layer 833, and the light-emitting substance contained in the EL layer 833 emits light. When a voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode 831 and the upper electrode 835, holes are injected into the EL layer 833 from the anode side and electrons are injected from the cathode side. The injected electrons and holes recombine in the EL layer 833, and the light-emitting substance contained in the EL layer 833 emits light. The injected electrons and holes recombine in the EL layer 833, and the light-emitting substance contained in the EL layer 833 emits light. The injected electrons and holes recombine in the EL layer 833, and the light-emitting substance contained in the EL layer 833 emits light.

[0236] The EL layer 833 has at least a light-emitting layer. As layers other than the light-emitting layer, the EL layer 833 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property). The EL layer 833 has at least a light-emitting layer. As layers other than the light-emitting layer, the EL layer 833 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property). The EL layer 833 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property). The EL layer 833 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property).

[0237] Either a low-molecular compound or a high-molecular compound can be used for the EL layer 833, and an inorganic It may contain a compound. Each layer constituting the EL layer 833 can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, etc. .

[0238] The light-emitting element is preferably provided between a pair of highly moisture-proof insulating films. This can suppress the intrusion of impurities such as water into the light-emitting element and suppress a decrease in the reliability of the light-emitting device. .

[0239] Examples of the highly moisture-proof insulating film include a film containing nitrogen and silicon such as a silicon nitride film and a silicon oxynitride film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Further, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, etc. may be used. .

[0240] For example, the water vapor transmission rate of the highly moisture-proof insulating film is 1×10 -5 [g / (m 2 ·day)] or less, preferably 1×10 -6 [g / (m 2 ·day)] or less, more preferably 1×10 -7 [g / (m 2 ·day)] or less, still more preferably 1×10 -8 [g / (m 2 ·da y)] or less.

[0241] It is preferable to use the highly moisture-proof insulating film for the insulating layer 813 or the insulating layer 843.

[0242] As the insulating layer 815, for example, an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film can be used. Further, as the insulating layer 817, the insulating layer 817a, and the insulating layer 817b, for example, polyimide, acrylic, polyamide, polyimide a nd so on can be used.​ Organic materials such as mid and benzocyclobutene resins can be used respectively. Also, low dielectric constant materials (low-k materials) and the like can be used. Also, a plurality of insulating films may be laminated to form each insulating layer.

[0243] The insulating layer 821 is formed using an organic insulating material or an inorganic insulating material. As the resin , for example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin, or phenolic resin and the like can be used. In particular, a photosensitive resin material is used, and it is preferable to form the side wall of the insulating layer 821 into an inclined surface formed with a continuous curvature.

[0244] The method for forming the insulating layer 821 is not particularly limited, and a photolithography method, a sputtering method, a vapor deposition method, a droplet discharge method (such as an inkjet method), a printing method (screen printing, offset printing etc.) and the like can be used.

[0245] The spacer 827 can be formed using an inorganic insulating material, an organic insulating material, a metal material, etc. For example, as the inorganic insulating material and the organic insulating material, various materials that can be used for the above insulating layer can be mentioned. As the metal material, titanium, aluminum, etc. can be used. By configuring the spacer 827 containing a conductive material and the upper electrode 835 to be electrically connected, the potential drop caused by the resistance of the upper electrode 835 can be suppressed. Also, the spacer 82 7 may have a forward taper shape or a reverse taper shape.

[0246] Functioning as an electrode or wiring of a transistor, or an auxiliary electrode of a light-emitting element, etc., used in a light-emitting device The conductive layer can be formed, for example, using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium, or an alloy material containing these elements, either as a single layer or by lamination. Alternatively, the conductive layer may be formed using a conductive metal oxide. Examples of conductive metal oxides include indium oxide (such as In2O3), tin oxide (such as SnO2), zinc oxide (ZnO), ITO, indium zinc oxide (such as In2O3-ZnO), or those obtained by incorporating silicon oxide into these metal oxide materials. It can be formed using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium, or an alloy material containing these elements, either as a single layer or by lamination. Alternatively, the conductive layer may be formed using a conductive metal oxide. Examples of conductive metal oxides include indium oxide (such as In2O3), tin oxide (such as SnO2), zinc oxide (ZnO), ITO, indium zinc oxide (such as In2O3-ZnO), or those obtained by incorporating silicon oxide into these metal oxide materials. It can be formed using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium, or an alloy material containing these elements, either as a single layer or by lamination. Alternatively, the conductive layer may be formed using a conductive metal oxide. Examples of conductive metal oxides include indium oxide (such as In2O3), tin oxide (such as SnO2), zinc oxide (ZnO), ITO, indium zinc oxide (such as In2O3-ZnO), or those obtained by incorporating silicon oxide into these metal oxide materials. It can be formed using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium, or an alloy material containing these elements, either as a single layer or by lamination.

[0247] The coloring layer 845 is a colored layer that transmits light in a specific wavelength band. For example, a red (R) color filter that transmits light in the red wavelength band, a green (G) color filter that transmits light in the green wavelength band, a blue (B) color filter that transmits light in the blue wavelength band, etc. can be used. Each coloring layer can be formed at a desired position using various materials by printing methods, inkjet methods, etching methods using photolithography, etc. The coloring layer 845 is a colored layer that transmits light in a specific wavelength band. For example, a red (R) color filter that transmits light in the red wavelength band, a green (G) color filter that transmits light in the green wavelength band, a blue (B) color filter that transmits light in the blue wavelength band, etc. can be used. Each coloring layer can be formed at a desired position using various materials by printing methods, inkjet methods, etching methods using photolithography, etc. The coloring layer 845 is a colored layer that transmits light in a specific wavelength band. For example, a red (R) color filter that transmits light in the red wavelength band, a green (G) color filter that transmits light in the green wavelength band, a blue (B) color filter that transmits light in the blue wavelength band, etc. can be used. Each coloring layer can be formed at a desired position using various materials by printing methods, inkjet methods, etching methods using photolithography, etc. The coloring layer 845 is a colored layer that transmits light in a specific wavelength band. For example, a red (R) color filter that transmits light in the red wavelength band, a green (G) color filter that transmits light in the green wavelength band, a blue (B) color filter that transmits light in the blue wavelength band, etc. can be used. Each coloring layer can be formed at a desired position using various materials by printing methods, inkjet methods, etching methods using photolithography, etc.

[0248] The light-shielding layer 847 is provided between adjacent coloring layers. The light-shielding layer blocks light from adjacent light-emitting elements and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end portion of the coloring layer to overlap with the light-shielding layer, light leakage can be suppressed. As the light-shielding layer, a material that blocks light emission from the light-emitting elements can be used. For example, a black matrix can be formed using a metal material, a pigment, or a resin material containing a dye. Note that it is preferable to provide the light-shielding layer in a region other than the light-emitting portion such as the drive circuit portion to suppress unintended light leakage due to waveguide light, etc. The light-shielding layer 847 is provided between adjacent coloring layers. The light-shielding layer blocks light from adjacent light-emitting elements and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end portion of the coloring layer to overlap with the light-shielding layer, light leakage can be suppressed. As the light-shielding layer, a material that blocks light emission from the light-emitting elements can be used. For example, a black matrix can be formed using a metal material, a pigment, or a resin material containing a dye. Note that it is preferable to provide the light-shielding layer in a region other than the light-emitting portion such as the drive circuit portion to suppress unintended light leakage due to waveguide light, etc. The light-shielding layer 847 is provided between adjacent coloring layers. The light-shielding layer blocks light from adjacent light-emitting elements and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end portion of the coloring layer to overlap with the light-shielding layer, light leakage can be suppressed. As the light-shielding layer, a material that blocks light emission from the light-emitting elements can be used. For example, a black matrix can be formed using a metal material, a pigment, or a resin material containing a dye. Note that it is preferable to provide the light-shielding layer in a region other than the light-emitting portion such as the drive circuit portion to suppress unintended light leakage due to waveguide light, etc.

[0249] Further, an overcoat 849 covering the colored layer and the light-shielding layer may be provided. By providing the overcoat, diffusion of impurities and the like contained in the colored layer into the light-emitting element can be prevented. The overcoat is made of a material that transmits light emitted from the light-emitting element. For example, an inorganic insulating film such as a silicon nitride film or a silicon oxide film, or an organic insulating film such as an acrylic film or a polyimide film can be used, and a laminated structure of an organic insulating film and an inorganic insulating film may be used.

[0250] Also, when applying the material of the adhesive layer onto the colored layer and the light-shielding layer, it is preferable to use a material having high wettability with respect to the material of the adhesive layer. For example, as the overcoat, an oxide conductive film such as an ITO film or a metal film such as a thin Ag film having a certain degree of translucency is preferably used.

[0251] As the connector 825, a paste-like or sheet-like material that shows anisotropic conductivity by thermocompression bonding and is obtained by mixing metal particles in a thermosetting resin can be used. As the metal particles, for example, particles in which two or more kinds of metals are layered, such as nickel particles coated with gold, are preferably used.

[0252] <Method for manufacturing a display panel> Next, a method for manufacturing a display panel according to one aspect of the present invention will be exemplified. Here, an example of manufacturing a top emission structure light-emitting device (the above specific Example 1) using the color filter method shown in FIGS. 9(A) and 9(C) is shown.

[0253] First, as shown in FIG. 11(A), a release layer 203 is formed on a manufacturing substrate 201, and an insulating layer 813 is formed on the release layer 203. Next, a plurality of transistors (transistors a resistor 820, etc.), a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements (light-emitting elements 830, etc.), and an insulating layer 821 are formed. Note that the insulating layer 821, the insulating layer 817, and the insulating layer 815 are open so that the conductive layer 857 is exposed. Here, an EL layer 862 is formed on the exposed conductive layer 857 with the same material and in the same process as the EL layer of the light-emitting element, and a conductive layer 864 is formed on the EL layer 8 62 with the same material and in the same process as the upper electrode of the light-emitting element. Note that the EL layer 862 and the conductive layer 864 may not be provided. Here, from the insulating layer 813 to the light-emitting element is used as the peeling layer.

[0254] Here, an example of forming an island-shaped peeling layer is shown, but it is not limited thereto. In this step, when peeling the peeling layer from the production substrate 201, a material is selected such that peeling occurs at the interface between the production substrate 201 and the peeling layer 203, at the interface between the peeling layer 203 and the peeled layer, or within the peeling layer 203. In this embodiment, a case where peeling occurs at the interface between the peeled layer and the peeling layer 203 is exemplified, but it is not limited thereto depending on the combination of materials used for the peeling layer 203 and the peeled layer. Note that when the peeled layer has a laminated structure, the layer in contact with the peeling layer 203 is particularly referred to as the first layer. For example, when the peeling layer 203 has a laminated structure of a tungsten film and a tungsten oxide film,

[0255] peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, so that a part of the peeling layer 203 (here, the tungsten oxide film) may remain on the peeled layer side. Also the peeling layer 203 remaining on the peeled layer side may be removed thereafter. The production substrate 201 is a substrate having heat resistance that can withstand at least the processing temperature during the production process.

[0256] The production substrate 201 is a substrate having heat resistance that can withstand at least the processing temperature during the production process. It is used. As the production substrate 201, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, a resin substrate, a plastic substrate, etc. can be used. When a glass substrate is used for the production substrate 201, between the production substrate 201 and the release layer 203, as an underlying film, forming an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, etc. can prevent contamination from the glass substrate and is preferable.

[0257] The release layer 203 can be formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline. Also, metal oxides such as aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. may be used. Using a high melting point metal material such as tungsten, titanium, molybdenum, etc. for the release layer 203 is preferable because the degree of freedom in the formation process of the layer to be peeled off increases.

[0258]

[0259]

[0260] The release layer 203 can be formed, for example, by a sputtering method, a plasma CVD method, a coating method (including a spin coating method, a droplet discharge method, a dispensing method, etc.), a printing method, etc. The thickness of the release layer 203 is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

[0259]

[0260]

[0260] When the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later. In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later. In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later.

[0261] In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later. In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later. In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later. In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later. In addition, when the release layer 203 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Also, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Incidentally, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 203, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof, so that an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. The formed layer containing the same may be utilized. Also, the surface of the layer containing tungsten may be treated with thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the release layer 203 by the above plasma treatment and heat treatment, it is possible to control the adhesion between the release layer 203 and the insulating layer formed later.

[0262] When peeling is possible at the interface between the production substrate and the layer to be peeled, the release layer may not be provided. For example, glass is used as the production substrate, and an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed in contact with the glass. Next, When peeling is possible at the interface between the production substrate and the layer to be peeled, the release layer may not be provided. For example, glass is used as the production substrate, and an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed in contact with the glass. Next, When peeling is possible at the interface between the production substrate and the layer to be peeled, the release layer may not be provided. For example, glass is used as the production substrate, and an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed in contact with the glass. Next, By performing laser irradiation or heat treatment, the adhesion between the production substrate and the organic resin is improved. Then , an insulating film, a transistor, or the like is formed on the organic resin. After that, laser irradiation is performed at an energy density higher than that of the previous laser irradiation, or heat treatment is performed at a temperature higher than that of the previous heat treatment so that peeling can occur at the interface between the production substrate and the organic resin. Further, at the time of peeling, a liquid may be infiltrated into the interface between the production substrate and the organic resin to separate them. In this method, since an insulating film, a transistor, or the like is formed on an organic resin having low heat resistance, a high temperature cannot be applied to the substrate in the production process. Here, a transistor using an oxide semiconductor does not require a high-temperature production process, and thus can be suitably formed on an organic resin.

[0263] Incidentally, the organic resin may be used as a substrate constituting the device, or the organic resin may be removed and another substrate may be bonded to the exposed surface of the layer to be peeled using an adhesive. Alternatively, a metal layer may be provided between the production substrate and the organic resin, and the metal layer may be heated by passing an electric current through the metal layer to effect peeling at the interface between the metal layer and the organic resin.

[0264] Also, as shown in FIG. 11(B), a peeling layer 223 is formed on a production substrate 221, and an insulating layer 843 is formed on the peeling layer 2 23. Next, a light-shielding layer 847 and a coloring layer 84 5 are formed on the insulating layer 843. Although not shown here, as shown in FIG. 9(D), an overcoat covering the light-shielding layer 847 and

[0265] the coloring layer 845 may be provided. Here, the insulating layer 843, the light-shielding layer 8 47, and the coloring layer 845 are used as the layer to be peeled.

[0266] 23. Next, a light-shielding layer 847 and a coloring layer 84 5 are formed on the insulating layer 843. Incidentally, although not shown here, as shown in FIG. 9(D), an overcoat covering the light-shielding layer 847 and the coloring layer 845 may be provided. Here, the insulating layer 843, the light-shielding layer 8 47, and the coloring layer 845 are used as the layer to be peeled.

[0267] Next, the production substrate 201 and the production substrate 221 are bonded together by the adhesive layer 823, and the adhesive layer 82 3 is cured. The bonding of the production substrate 201 and the production substrate 221 is preferably performed in a reduced-pressure atmosphere.

[0268] In addition, in FIG. 11(C), the case where the sizes of the release layer 203 and the release layer 223 are the same is shown, but release layers having different sizes may be used.

[0269] The adhesive layer 823 is disposed so as to overlap the release layer 203 and the layer to be released. Then, as shown in FIG. 11( C), it is preferable that the end portion of the adhesive layer 823 is not located outside the end portion of the release layer 203. If the adhesive layer 823 has a region that does not overlap the release layer 203, peeling failure is likely to occur depending on the size of that region and the adhesion between the adhesive layer 823 and the layer in contact therewith. Therefore, it is preferable that the adhesive layer 823 is located inside the release layer 203, or that the end portion of the adhesive layer 8 23 overlaps the end portion of the release layer 203.

[0270] In the present embodiment, a sheet-like adhesive is used for the adhesive layer 823, but the present invention is not limited thereto. Since the sheet-like adhesive has low fluidity, it can be disposed only in a desired region, and it is possible to prevent the adhesive layer 823 from spreading outside the release layer 203 and further to suppress a decrease in the yield of the peeling process. And the yield of the peeling process can be improved.

[0271] Then, a peeling starting point is formed by irradiation with laser light (FIG. 11(C)). Here, an example of removing a part of the edge layer 813 and the release layer 203 is shown. In each figure showing the process of forming the peeling starting point, the region where the peeling starting point is formed is indicated by a dotted line.

[0272] ​​​​​​​ The laser light is irradiated onto the region where the cured adhesive layer 823, the layer to be peeled off, and the release layer 203 overlap. The laser light may be irradiated from either substrate side. However, in order to prevent the scattered light from irradiating functional elements or the like, it is preferable to irradiate from the side of the production substrate 201 provided with the release layer 203. Note that the substrate on the side where the laser light is irradiated uses a material that transmits the laser light.

[0273] By creating cracks (causing film cracking or splitting) in at least the first layer (the layer in the layer to be peeled off that is in contact with the release layer 203), a part of the first layer is removed to form a starting point for peeling. At this time, not only the first layer but also other layers of the layer to be peeled off, the release layer 203, and a part of the adhesive layer 823 may be removed. By irradiating the laser light, a part of the film included in the layer to be peeled off, the release layer 203, or the adhesive layer 823 can be dissolved, evaporated, or thermally destroyed.

[0274] In this production method, a pair of production substrates on which the layers to be peeled off are respectively formed are bonded together in advance, and then peeled, and a flexible substrate can be bonded. Therefore, when bonding the layers to be peeled off, production substrates with low flexibility can be bonded together, and the alignment accuracy during bonding can be improved compared to when flexible substrates are bonded together. Therefore, it can be said that it is a production method with high alignment accuracy in bonding a light-emitting element and a color filter.

[0275] Next, starting from the formed starting point for peeling, the layer to be peeled off and the production substrate 201 are peeled. As a result, the layer to be peeled off is transferred from the production substrate 201 to the production substrate 221 (FIG. 12(A)).

[0276] ​​​​​​​​​​​​​Either the production substrate 201 or the production substrate 221 may be peeled off. If the sizes of the release layers are different it may be peeled off from the substrate on which the larger release layer is formed, or it may be peeled off from the substrate on which the smaller release layer is formed. When elements such as semiconductor elements, light-emitting elements, and display elements are fabricated only on one of the substrates, it may be peeled off from the substrate on which the elements are formed, or it may be peeled off from the other substrate. Here, an example in which the production substrate 201 is peeled off first is shown.

[0277] For example, from the starting point of peeling, the release layer and the production substrate 201 may be separated by a physical force (such as a process of peeling off with a human hand or a jig, or a process of separating while rotating a roller).

[0278] Alternatively, a liquid such as water may be infiltrated into the interface between the release layer 203 and the release layer to separate the production substrate 201 and the release layer. The liquid can seep between the release layer 203 and the release layer due to capillary action, enabling easy separation. Also, the static electricity generated during peeling can be prevented from having an adverse effect on the functional elements included in the release layer (such as the semiconductor element being damaged by static electricity).

[0279] Next, the exposed insulating layer 813 peeled off from the production substrate 201 and the substrate 801 are adhered by an adhesive layer 8 11. In this embodiment, a sheet-like adhesive is used for the adhesive layer 811, but it is not limited thereto.

[0280] Next, a starting point of peeling is formed by irradiation with a laser beam (FIG. 12(B)). Then, from the formed starting point of peeling, the insulating layer 843 and the production substrate 221 are separated (FIG. 12(C)).

[0281] As described above, the layer to be peeled off can be transferred from the production substrate 201 and the production substrate 221 onto the substrate 801. This can be done.

[0282] Thereafter, a step of exposing the conductive layer 857 and a step of bonding the insulating layer 843 and the substrate 803 using the adhesive layer 841 are performed. Either step can be performed first. In the present embodiment, first, the insulating layer 843 and the substrate 803 are bonded using the adhesive layer 841 (FIG. 13 (A)). Here, a sheet-like adhesive is used for the adhesive layer 841, but it is not limited thereto.

[0283] For example, by opening the insulating layer 843 and the adhesive layer 823, the conductive layer 857 is exposed. In addition, when the substrate 803 overlaps the conductive layer 857, in order to expose the conductive layer 857, the substrate 803 and the adhesive layer 841 are also opened.

[0284] The means for opening is not particularly limited. For example, a laser ablation method, an etching method, an ion beam sputtering method, etc. may be used. Also, a sharp cutting tool such as a needle or a cutter can be used to cut into the film on the conductive layer 857, and a part of the film can be peeled off with physical force.

[0285] For example, starting from a region where a part of the film has been removed, the substrate 803, the adhesive layer 841, the insulating layer 843, the adhesive layer 823, the EL layer 862, and the conductive layer 864 that overlap the conductive layer 857 are removed ( FIG. 13(B)). For example, an adhesive roller is pressed against the substrate 803 and rotated while moving relatively. Or, an adhesive tape can be attached to the substrate 803 and peeled off. The adhesion between the EL layer 862 and the conductive layer 864, and the adhesion between the layers constituting the EL layer 862 Due to low adhesion, separation occurs at the interface between the EL layer 862 and the conductive layer 864, or within the EL layer 862. As a result, it is possible to selectively remove the regions of the substrate 803, the adhesive layer 841, the insulating layer 843, the adhesive layer 823, the EL layer 8 62, or the conductive layer 857 of the conductive layer 864 that overlap. In addition, if the EL layer 862 or the like remains on the conductive layer 857, it can be removed with an organic solvent or the like. That's fine.

[0286] In addition, if the conductive layer 857 is exposed and can be electrically connected to the FPC 808 in a later process, the method of removing the layer that overlaps the conductive layer 857 does not matter. If not necessary, the EL layer 862 or the conductive layer 864 do not have to be formed by overlapping them on the conductive layer 857. For example, if separation occurs within the EL layer 862, the conductive layer 864 does not have to be provided. Also, depending on the materials used, when the EL layer 862 and the adhesive layer 823 are in contact, problems such as the mixing of the two-layer materials and the unclear interface of the layers may occur. In such cases, in order to suppress the reduction in the reliability of the light-emitting device, it is preferable to provide the conductive layer 864 between the EL layer 862 and the adhesive layer 823. Finally, the FPC 808 is attached to each electrode (conductive layer 857) of the input / output terminal portion with an anisotropic conductive material (connector 825). If necessary, an IC chip or the like may be mounted. Note that if the flexible

[0287] substrate is too flexible, the bonding accuracy may decrease when attaching the FPC or TCP. Therefore, when attaching the FPC or TCP, the fabricated device may be supported with glass or silicone rubber or the like. This can ensure an electrical connection between the FPC or TCP and the functional element. When the flexible substrate is too flexible, the bonding accuracy may decrease when attaching the FPC or TCP. Therefore, when attaching the FPC or TCP, the fabricated device may be supported with glass or silicone rubber or the like. This can ensure an electrical connection between the FPC or TCP and the functional element. rubber or the like. This can ensure an electrical connection between the FPC or TCP and the functional element. This can ensure a reliable electrical connection between the FPC or TCP and the functional element.

[0288] In the method for manufacturing the light-emitting device according to one aspect of the present invention described above, a starting point for peeling is formed, and after making the peeling layer and the layer to be peeled in a state where peeling is easy, peeling is performed. Thereby, the yield of the peeling process can be improved. Therefore, a light-emitting device can be manufactured with a high yield.

[0289] This embodiment can be appropriately combined with other embodiments.

[0290] (Embodiment 5) In this embodiment, an electronic device and an illumination device that can be manufactured by applying a touch panel according to one aspect of the present invention will be described with reference to FIGS. 14 and 15.

[0291] The touch panel according to one aspect of the present invention has flexibility. Therefore, it can be suitably used for flexible electronic devices and illumination devices. Further, by applying one aspect of the present invention, an electronic device or an illumination device with high reliability and strong resistance to repeated bending can be manufactured.

[0292] Examples of the electronic device include a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a portable game machine, a portable information terminal, an audio playback device, and a large game machine such as a pachinko machine.

[0293] In addition, since the touch panel according to one aspect of the present invention has flexibility, it can also be incorporated along the inner wall or outer wall of a house or building, or the curved surface of the interior or exterior of an automobile.

[0294] Further, the electronic device or illumination device according to one aspect of the present invention may have a touch panel and a secondary battery. Good. At this time, it is preferable that the secondary battery can be charged using wireless power transmission. .

[0295] Examples of the secondary battery include lithium-ion secondary batteries such as lithium polymer batteries using a gel electrolyte (lithium ion polymer batteries), nickel-metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, silver-zinc batteries, and the like. . .

[0296] The electronic device or lighting device according to one aspect of the present invention may have a touch panel and an antenna. By receiving a signal with the antenna, images, information, etc. can be displayed on the display unit. Also, when the touch panel has a secondary battery, the antenna may be used for wireless power transmission. .

[0297] FIG. 14(A) shows an example of a mobile phone. The mobile phone 7400 includes a display unit 7402 incorporated in a housing 7401, as well as operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the mobile phone 7400 is manufactured by using the touch panel according to one aspect of the present invention for the display unit 7402. According to one aspect of the present invention, a mobile phone with a curved display unit and high reliability can be provided.

[0298] In the mobile phone 7400 shown in FIG. 14(A), information can be input by touching the display unit 7402 with a finger or the like. Also, any operation such as making a call or inputting characters can be performed by touching the display unit 7402 with a finger or the like.

[0299] Also, by operating the operation buttons 7403, power on / off operations and operations on the display unit 7402 can be performed. It is possible to switch the type of image to be displayed. For example, from the email creation screen, it can be switched to the main menu screen.

[0300] FIG. 14(B) shows an example of a wristwatch-type portable information terminal. The portable information terminal 7100 includes a housing 7101, a display unit 7102, a band 7103, a buckle 7104, operation buttons 71 05, input / output terminals 7106, etc.

[0301] The portable information terminal 7100 can execute various applications such as mobile phones, email, text viewing and creation, music playback, Internet communication, computer games, etc. It can be done.

[0302] The display unit 7102 has a curved display surface and can perform display along the curved display surface. In addition, the display unit 7102 is provided with a touch sensor and can be operated by touching the screen with a finger or a stylus. For example, by touching the icon 71 07 displayed on the display unit 7102, an application can be launched.

[0303] In addition to time setting, the operation buttons 7105 can perform various functions such as turning on and off the power, turning on and off wireless communication, executing and canceling the silent mode, and executing and canceling the power saving mode. For example, the functions of the operation buttons 7105 can also be freely set by the operating system incorporated in the portable information terminal 7100. It can also be set freely.

[0304] In addition, the portable information terminal 7100 is capable of performing communication-standard short-range wireless communication. For example, by communicating with a wireless headset capable of wireless communication, it can be hands-free It is also possible to make a call.

[0305] Also, the mobile information terminal 7100 is provided with an input / output terminal 7106, and can directly exchange data with other information terminals via a connector. Also, charging can be performed via the input / output terminal 7106. Note that the charging operation may be performed by wireless power supply without going through the input / output terminal 7106. Also, the mobile information terminal 7100 is provided with an input / output terminal 7106, and can directly exchange data with other information terminals via a connector. Also, charging can be performed via the input / output terminal 7106. Note that the charging operation may be performed by wireless power supply without going through the input / output terminal 7106. It may be performed.

[0306] A touch panel according to an aspect of the present invention is incorporated in the display unit 7102 of the mobile information terminal 7100. According to an aspect of the present invention, a mobile information terminal having a curved display unit and high reliability can be provided. According to an aspect of the present invention, a mobile information terminal having a curved display unit and high reliability can be provided. It can be provided.

[0307] Figures 14(C) to (E) show an example of a lighting device. The lighting devices 7200, 7210, and 7220 each include a base 7201 having an operation switch 7203 and a light emitting unit supported by the base 7201. Figures 14(C) to (E) show an example of a lighting device. The lighting devices 7200, 7210, and 7220 each include a base 7201 having an operation switch 7203 and a light emitting unit supported by the base 7201. Figures 14(C) to (E) show an example of a lighting device. The lighting devices 7200, 7210, and 7220 each include a base 7201 having an operation switch 7203 and a light emitting unit supported by the base 7201.

[0308] The lighting device 7200 shown in Figure 14(C) includes a light emitting unit 7202 having a wavy light emitting surface. Therefore, it is a lighting device with high design quality. Therefore, it is a lighting device with high design quality.

[0309] The light emitting unit 7212 provided in the lighting device 7210 shown in Figure 14(D) has a configuration in which two convexly curved light emitting units are symmetrically arranged. Therefore, it is possible to illuminate all directions around the lighting device 7210. The light emitting unit 7212 provided in the lighting device 7210 shown in Figure 14(D) has a configuration in which two convexly curved light emitting units are symmetrically arranged. Therefore, it is possible to illuminate all directions around the lighting device 7210. It is possible to illuminate all directions around the lighting device 7210.

[0310] The lighting device 7220 shown in Figure 14(E) includes a light emitting unit 7222 that is concave-curved. Therefore, since the light emitted from the light emitting unit 7222 is condensed on the front surface of the lighting device 7220, it is suitable for illuminating a specific range brightly. Therefore, since the light emitted from the light emitting unit 7222 is condensed on the front surface of the lighting device 7220, it is suitable for illuminating a specific range brightly. It is suitable for illuminating a specific range brightly.

[0311] In addition, since each light-emitting unit included in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light-emitting unit may be fixed with members such as a plastic member or a movable frame, and may be configured such that the light-emitting surface of the light-emitting unit can be freely curved according to the application. In addition, since each light-emitting unit included in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light-emitting unit may be fixed with members such as a plastic member or a movable frame, and may be configured such that the light-emitting surface of the light-emitting unit can be freely curved according to the application. In addition, since each light-emitting unit included in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light-emitting unit may be fixed with members such as a plastic member or a movable frame, and may be configured such that the light-emitting surface of the light-emitting unit can be freely curved according to the application.

[0312] Here, although the lighting device in which the light-emitting unit is supported by the base portion has been exemplified, the housing including the light-emitting unit may also be used by fixing it to the ceiling or suspending it from the ceiling. Since the light-emitting surface can be curved and used, the light-emitting surface can be curved in a concave shape to illuminate a specific area brightly, or the light-emitting surface can be curved in a convex shape to illuminate the entire room brightly. Here, although the lighting device in which the light-emitting unit is supported by the base portion has been exemplified, the housing including the light-emitting unit may also be used by fixing it to the ceiling or suspending it from the ceiling. Since the light-emitting surface can be curved and used, the light-emitting surface can be curved in a concave shape to illuminate a specific area brightly, or the light-emitting surface can be curved in a convex shape to illuminate the entire room brightly. Here, although the lighting device in which the light-emitting unit is supported by the base portion has been exemplified, the housing including the light-emitting unit may also be used by fixing it to the ceiling or suspending it from the ceiling. Since the light-emitting surface can be curved and used, the light-emitting surface can be curved in a concave shape to illuminate a specific area brightly, or the light-emitting surface can be curved in a convex shape to illuminate the entire room brightly. Here, although the lighting device in which the light-emitting unit is supported by the base portion has been exemplified, the housing including the light-emitting unit may also be used by fixing it to the ceiling or suspending it from the ceiling. Since the light-emitting surface can be curved and used, the light-emitting surface can be curved in a concave shape to illuminate a specific area brightly, or the light-emitting surface can be curved in a convex shape to illuminate the entire room brightly.

[0313] Here, a touch panel according to one aspect of the present invention is incorporated in each light-emitting unit. According to one aspect of the present invention, a lighting device including a curved light-emitting unit and having high reliability can be provided. Here, a touch panel according to one aspect of the present invention is incorporated in each light-emitting unit. According to one aspect of the present invention, a lighting device including a curved light-emitting unit and having high reliability can be provided.

[0314] FIG. 14(F) shows an example of a portable touch panel. The touch panel 7300 includes a housing 7301, a display unit 7302, an operation button 7303, a drawer member 7304, and a control unit 7305. FIG. 14(F) shows an example of a portable touch panel. The touch panel 7300 includes a housing 7301, a display unit 7302, an operation button 7303, a drawer member 7304, and a control unit 7305. FIG. 14(F) shows an example of a portable touch panel. The touch panel 7300 includes a housing 7301, a display unit 7302, an operation button 7303, a drawer member 7304, and a control unit 7305.

[0315] The touch panel 7300 includes a flexible display unit 7302 wound in a roll shape inside a cylindrical housing 7301. The touch panel 7300 includes a flexible display unit 7302 wound in a roll shape inside a cylindrical housing 7301.

[0316] In addition, the touch panel 7300 can receive a video signal by the control unit 7305 and display the received video on the display unit 7302. In addition, a battery is provided for the control unit 7305. In addition, the control unit 7305 may be provided with a terminal portion to which a connector is connected, and may be configured to directly supply a video signal and power from the outside by wire. In addition, the touch panel 7300 can receive a video signal by the control unit 7305 and display the received video on the display unit 7302. In addition, a battery is provided for the control unit 7305. In addition, the control unit 7305 may be provided with a terminal portion to which a connector is connected, and may be configured to directly supply a video signal and power from the outside by wire. In addition, the touch panel 7300 can receive a video signal by the control unit 7305 and display the received video on the display unit 7302. In addition, a battery is provided for the control unit 7305. In addition, the control unit 7305 may be provided with a terminal portion to which a connector is connected, and may be configured to directly supply a video signal and power from the outside by wire. In addition, the touch panel 7300 can receive a video signal by the control unit 7305 and display the received video on the display unit 7302. In addition, a battery is provided for the control unit 7305. In addition, the control unit 7305 may be provided with a terminal portion to which a connector is connected, and may be configured to directly supply a video signal and power from the outside by wire.

[0317] Also, by the operation button 7303, operations such as turning the power on and off and switching the video to be displayed can be performed.

[0318] FIG. 14(G) shows the touch panel 7300 in a state where the display unit 7302 is pulled out by the pulling member 7304 In this state, a video can be displayed on the display unit 7302. Also by the operation button 7303 arranged on the surface of the housing 7301, it can be easily operated with one hand Further, by arranging the operation button 7303 not at the center of the housing 7301 but on one side as shown in FIG. 14(F) it can be easily operated with one hand.

[0319] In addition, in order to fix the display surface of the display unit 7302 to be flat when the display unit 7302 is pulled out a frame for reinforcement may be provided on the side portion of the display unit 7302.

[0320] In addition to this configuration, a speaker may be provided in the housing and configured to output sound by an audio signal received together with the video signal

[0321] A touch panel according to one aspect of the present invention is incorporated in the display unit 7302. According to one aspect of the present invention a lightweight and highly reliable touch panel can be provided.

[0322] FIGS. 15(A) to (C) show the foldable portable information terminal 310. FIG. 15(A) shows the portable information terminal 310 in the unfolded state. FIG. 15(B) shows the portable information terminal 310 in a state of changing from one of the unfolded state or the folded state to the other FIG. 15(C) shows the portable information terminal 310 in the folded state. The portable information terminal 310 is in the folded state ​​In the folded state, it has excellent portability, and in the unfolded state, it has excellent display listability due to a seamless and wide display area. It is excellent in performance.

[0323] The touch panel 314 is supported by three housings 315 connected by a hinge 313. By bending between two housings 315 via the hinge 313, the portable information terminal 3 10 can be reversibly deformed from the unfolded state to the folded state. The touch panel of one aspect of the present invention can be used for the touch panel 314. For example, a touch panel that can be bent with a curvature radius of 1 mm or more and 150 mm or less can be applied.

[0324] In addition, in one aspect of the present invention, it may be configured to include a sensor that detects that the touch panel is in the folded state or the unfolded state and supplies detection information. The control device of the touch panel acquires information indicating that the touch panel is in the folded state, and may stop the operation of the folded portion (or the portion that is folded and becomes invisible to the user). Specifically, the display may be stopped. Also, the detection by the touch sensor may be stopped.

[0325] Similarly, the control device of the touch panel may acquire information indicating that the touch panel is in the unfolded state and resume the display and detection by the touch sensor.

[0326] Figs. 15(D) and (E) show a foldable portable information terminal 329. Fig. 15(D) shows the portable information terminal 329 in a folded state with the display unit 326 on the outside. Fig. 15 shows the portable information terminal 329 in a folded state with the display unit 326 on the inside. (E) shows the portable information terminal 329 in a folded state with the display unit 326 on the inside. ​​​​​That is, when the mobile information terminal 329 is not in use, by folding the non-display portion 325 outward, soiling and scratching of the display portion 326 can be suppressed. The touch panel according to one aspect of the present invention can be used for the display portion 32 6.

[0327] FIG. 15(F) is a perspective view for explaining the outer shape of the mobile information terminal 330. FIG. 15(G) is a top view of the mobile information terminal 330. FIG. 15(H) is a perspective view for explaining the outer shape of the mobile information terminal 340 .

[0328] The mobile information terminals 330 and 340 have one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, they can each be used as a smartphone.

[0329] The mobile information terminals 330 and 340 can display character and image information on their plurality of surfaces. For example, three operation buttons 339 can be displayed on one surface (FIGS. 15(F), ( H)). Also, information 337 indicated by a dashed rectangle can be displayed on another surface (FIGS. 15( G), (H)). Examples of the information 337 include notifications of SNS (Social Networking Service), displays for notifying incoming calls such as emails and phone calls, the subject or sender name of emails, etc., date and time, battery remaining amount, antenna reception strength, etc. Alternatively, instead of the information 337, operation buttons 339, icons, etc. may be displayed at the position where the information 337 is displayed. In FIGS. 15(F) and (G), an example where the information 337 is displayed on the upper side is shown, but one aspect of the present invention is not limited to this. For example, as in the case of the mobile information terminal 340 shown in FIG. 15( H), it may be displayed on the side.

[0330] For example, the user of the portable information terminal 330 can store the portable information terminal 330 in the breast pocket of a piece of clothing and can view the display (here, information 337) in this state.

[0331] Specifically, the phone number or name of the caller of an incoming call, etc., is displayed at a position where it can be observed from above the portable information terminal 330 so that the user can view the display and determine whether to answer the call without taking the portable information terminal 330 out of the pocket.

[0332] The display unit 333 respectively provided on the housing 338 of the portable information terminal 330 and the housing 336 of the portable information terminal 340 can use the touch panel of one aspect of the present invention. According to one aspect of the present invention, a portable information terminal with a curved display unit and high reliability can be provided.

[0333] Also, as in the portable information terminal 345 shown in FIG. 15(I), information may be displayed on three or more sides. Here, an example is shown where the information 354, information 356, and information 357 are respectively displayed on different sides.

[0334] The display unit 358 provided on the housing 351 of the portable information terminal 345 can use the touch panel of one aspect of the present invention. According to one aspect of the present invention, a portable information terminal with a curved display unit and high reliability can be provided.

[0335] This embodiment can be appropriately combined with other embodiments.

Example

[0336] In this example, a touch panel of one aspect of the present invention was fabricated, and the results of a bending test will be described. The touch panel fabricated in this example is, as shown in FIG. 19(A), a color filter ​​​​​​​​ A top emission type display panel using a Luta method and a capacitive touch sensor and have.

[0337] <Method for producing sample> First, a flexible display panel and a flexible touch sensor were produced. In both cases, the device is formed on a glass substrate which is a production substrate, the element is peeled off from the production substrate, and the element is transferred onto a flexible substrate . As the release layer, a laminated structure of a tungsten film and a tungsten oxide film on the tungsten film was formed. Details of the production method can refer to Embodiments 2 to 3 .

[0338] The display panel has an organic EL element as a display element and a transistor using CAAC-OS (C Axis Aligned Crystalline Oxide Semico nductor).

[0339] Since CAAC-OS is not amorphous, it has few defect levels and can improve the reliability of the transistor . Also, since CAAC-OS has no grain boundaries, cracks are less likely to occur in the CAAC-OS film due to the stress when the flexible device is bent.

[0340] CAAC-OS is a crystalline oxide semiconductor in which the c-axis of the crystal is substantially perpendicular to the film surface . As the crystal structure of the oxide semiconductor, there are various structures different from single crystals, such as nano-crystal (nc) which is an aggregate of nano-scale microcrystals . It has been confirmed that there are various structures. CAAC-OS has lower crystallinity than single crystals and higher crystallinity than nc .

[0341] ​​In this embodiment, a channel-etched transistor using an In-Ga-Zn oxide is used. The transistor was fabricated on a glass substrate at a temperature of less than 500°C.

[0342] In the method of directly fabricating elements such as transistors on organic resin such as plastic substrates, The temperature in the manufacturing process must be lower than the heat resistance temperature of the organic resin. The substrate used for the preparation is a glass substrate, and the peeling layer, which is an inorganic film, has high heat resistance. The transistors can be fabricated at the same temperature as when fabricating transistors on a substrate. The performance and reliability of the transistor can be easily ensured.

[0343] The organic EL element has a fluorescent light-emitting unit having a light-emitting layer that emits blue light and a and a phosphorescent light-emitting unit having a red light-emitting layer and a red light-emitting layer. The organic EL element used was a top-emission type. The device has an ITO film that functions as an optical adjustment layer. The thickness of the optical adjustment layer is set according to the color of each pixel. The combination of the color filter and the microcavity structure allows From the display panel produced in this embodiment, light with high color purity can be extracted.

[0344] The display panel and the touch sensor each have a pair of flexible substrates 16. An organic resin film with a thickness of 20 μm was used as the substrate.

[0345] Next, the surfaces of the display panel and the touch sensor to be bonded together were subjected to UV ozone treatment.

[0346] Next, a laminator is used to apply a thick layer of the adhesive to the surface of the touch sensor that will be attached to the display panel. A 300-μm adhesive layer was formed. In the sample, a silicone-based gel adhesive layer was used. For comparison In the comparative sample, an acrylic-based gel adhesive layer was used.

[0347] Here, the physical properties of the silicone-based gel adhesive layer used in the sample are shown. The Young's modulus is 50 kPa , the penetration is 100, the transmittance is 91%, and the compression set rate is 32%. Also, for the comparative sample the physical properties of the acrylic-based gel adhesive layer used are shown. The Young's modulus is about 300 kPa, and the penetration is 7 5.

[0348] Then, using a laminator, the display panel and the touch sensor were bonded together with the adhesive layer. After that, heat treatment was performed at 60 °C for 100 hours to improve the adhesion between each substrate and the adhesive layer. .

[0349] Two samples were fabricated. One was used for operation confirmation, and one was used for the bending test. For the comparative sample one was fabricated. After confirming the operation, a bending test was performed.

[0350] The operations of the sample and the comparative sample were confirmed. As a result, both the fabricated sample and the comparative sample were confirmed to be able to sense with the touch sensor when displaying on the display panel.

[0351] Note that when the same display panel and touch sensor as those used in the sample and the comparative sample were directly overlapped, normal sensing by the touch sensor was not possible when displaying on the display panel. Next, by overlapping the display panel and the touch sensor via a laminate, the distance between the display panel and the touch sensor was increased. The laminate has a structure in which a silicone resin with a film thickness of 25 μm and a PET film with a film thickness of 50 μm are alternately laminated. As a result, the display panel and the touch sensor When the distance between the touch sensor is 100 μm and 175 μm, it is displayed on the display panel. During this time, normal sensing by the touch sensor was not possible, but when the distance was 250 μm, normal sensing was possible. However, the touch panel using the laminate with a film thickness of 250 μm was difficult to use repeatedly by bending.

[0352] In addition, bending tests were performed on the samples and comparative samples. As shown in Fig. 16, the bent portion (Bent portion) is the central part of the touch panel and includes the display part and the scan driver. The bending test was performed using the book-type bending tester shown in Fig. 17.

[0353] This bending tester performs a bending test by repeating the open state (see Fig. 17(A)) and the closed state (see Fig. 17(B )). By determining the distance between the plates when bending, the bending radius of curvature of the touch panel is determined. Note that the panels shown in Figs. 17(A) and (B) are not samples of this example. The bending characteristics of the touch panel evaluated using the book-type bending tester are shown. When bending was performed 70,000 times with an inner bending radius of 5 mm, no defects occurred in the display part. Also, after the bending test, almost no bending distortion was observed. Here, the case where the display surface of the touch panel faces inward is referred to as inner bending.

[0354] Fig. 18(C) shows the sample before the bending test, and Fig. 18(D) shows the sample after bending 16,500 times. Note that even after bending 70,000 times, there was almost no change from the state shown in Fig. 18(D). When bending was performed 70,000 times with an inner bending radius of 5 mm, no defects occurred in the display part. Also, after the bending test, almost no bending distortion was observed. Here, the case where the display surface of the touch panel faces inward is referred to as inner bending. When bending was performed 70,000 times with an inner bending radius of 5 mm, no defects occurred in the display part. Also, after the bending test,

[0355] Fig. 18(C) shows the sample before the bending test, and Fig. 18(D) shows the sample after bending 16,500 times. Note that even after bending 70,000 times, there was almost no change from the state shown in Fig. 18(D). When bending was performed 70,000 times with an inner bending radius of 5 mm, no defects occurred in the display part. Also, after the bending test, almost no bending distortion was observed. Here, the case where the display surface of the touch panel faces inward is referred to as inner bending.

[0356] Here, attention was paid to the positional relationship between the color filter 98 provided on the display panel side and the electrode 99 provided on the touch sensor side in the sample. As shown in FIG. 18(A), compared with the state where the sample is not bent, in the state where the sample is bent as shown in FIG. 18(B), it was found that the distance between the color filter 98 and the electrode 99 is wider. From this, as shown in Embodiment 1, it can be said that the adhesive layer 12 is deformed from the state of FIG. 1(A) to the state of FIG. 1(B). The sample shown in FIG. 18(A) was bent, and compared with the state where the sample was not bent, in the state where the sample was bent as shown in FIG. 18(B), it was found that the distance between the color filter 98 and the electrode 99 was wider. From this, as shown in Embodiment 1, it can be said that the adhesive layer 12 was deformed from the state of FIG. 1(A) to the state of FIG. 1(B). As shown in FIG. 18(A), compared with the state where the sample is not bent, in the state where the sample is bent as shown in FIG. 18(B), it was found that the distance between the color filter 98 and the electrode 99 is wider. From this, as shown in Embodiment 1, it can be said that the adhesive layer 12 is deformed from the state of FIG. 1(A) to the state of FIG. 1(B). As shown in FIG. 18(A), compared with the state where the sample is not bent, in the state where the sample is bent as shown in FIG. 18(B), it was found that the distance between the color filter 98 and the electrode 99 is wider. From this, as shown in Embodiment 1, it can be said that the adhesive layer 12 is deformed from the state of FIG. 1(A) to the state of FIG. 1(B). As shown in FIG. 18(A), compared with the state where the sample is not bent, in the state where the sample is bent as shown in FIG. 18(B), it was found that the distance between the color filter 98 and the electrode 99 is wider. From this, as shown in Embodiment 1, it can be said that the adhesive layer 12 is deformed from the state of FIG. 1(A) to the state of FIG. 1(B). As shown in FIG. 18(A), compared with the state where the sample is not bent, in the state where the sample is bent as shown in FIG. 18(B), it was found that the distance between the color filter 98 and the electrode 99 is wider. From this, as shown in Embodiment 1, it can be said that the adhesive layer 12 is deformed from the state of FIG. 1(A) to the state of FIG. 1(B).

[0357] On the other hand, the comparative sample was only bent inward once with a radius of curvature of 5 mm, and a bend mark appeared in the bent portion (see the dotted line portion shown in FIG. 18(E)). On the other hand, the comparative sample was only bent inward once with a radius of curvature of 5 mm, and a bend mark appeared in the bent portion (see the dotted line portion shown in FIG. 18(E)).

[0358] As described above, in this example, by bonding the display panel and the touch sensor using an adhesive layer having a Young's modulus of 50 kPa, a highly reliable flexible touch panel that is resistant to repeated bending was fabricated. In addition, it was possible to achieve both the thinning of the touch panel and high detection sensitivity. As described above, in this example, by bonding the display panel and the touch sensor using an adhesive layer having a Young's modulus of 50 kPa, a highly reliable flexible touch panel that is resistant to repeated bending was fabricated. In addition, it was possible to achieve both the thinning of the touch panel and high detection sensitivity. As described above, in this example, by bonding the display panel and the touch sensor using an adhesive layer having a Young's modulus of 50 kPa, a highly reliable flexible touch panel that is resistant to repeated bending was fabricated. In addition, it was possible to achieve both the thinning of the touch panel and high detection sensitivity. As described above, in this example, by bonding the display panel and the touch sensor using an adhesive layer having a Young's modulus of 50 kPa, a highly reliable flexible touch panel that is resistant to repeated bending was fabricated. In addition, it was possible to achieve both the thinning of the touch panel and high detection sensitivity.

[0359] From this example, it was suggested that by setting the Young's modulus of the adhesive layer for bonding the display panel and the touch sensor to less than 300 kPa, and further to 50 kPa or less, it is possible to achieve both the thinning of the touch panel and high detection sensitivity, and to fabricate a touch panel that is resistant to repeated bending. From this example, it was suggested that by setting the Young's modulus of the adhesive layer for bonding the display panel and the touch sensor to less than 300 kPa, and further to 50 kPa or less, it is possible to achieve both the thinning of the touch panel and high detection sensitivity, and to fabricate a touch panel that is resistant to repeated bending. From this example, it was suggested that by setting the Young's modulus of the adhesive layer for bonding the display panel and the touch sensor to less than 300 kPa, and further to 50 kPa or less, it is possible to achieve both the thinning of the touch panel and high detection sensitivity, and to fabricate a touch panel that is resistant to repeated bending.

Explanation of Signs

[0360] 10U Detection Unit 10UB Detection Unit 11 Display Panel 12 Adhesive Layer 13 Touch Sensor 15 Display Element 15a Transistor 15b Light-emitting element 15c Transistor 15d Contact portion 15e Capacitance portion 16 Flexible substrate 17 Detection element 18 Adhesive layer 19 Insulating layer 20 Insulating layer 21 Conductive layer 23 Conductive layer 98 Color filter 99 Electrode 100 Touch sensor 100B Touch sensor 112 Touch sensor 201 Fabrication substrate 203 Release layer 221 Fabrication substrate 223 Release layer 301 Flexible substrate 302 Flexible substrate 305 FPC 310 Portable information terminal 311 Wiring 312 Wiring 314 Touch panel 313 Hinge 315 Housing 320 Insulating layer 321 Electrode 322 Electrode 323 Wiring 324 Dielectric layer 325 Non-display portion 326 Display portion 329 Portable information terminal 330 Portable information terminal 331 Adhesive layer 332 Adhesive layer 333 Display portion 335 Protective layer 336 Housing 337 Information 338 Housing 339 Operation button 340 Portable information terminal 345 Portable information terminal 351 Housing 354 Information 355 Connector 356 Information 357 Information 358 Display unit 391 Fabrication substrate 393 Release layer 395 Insulating layer 801 Substrate 803 Substrate 804 Light-emitting part 806 Driving circuit part 808 FPC 811 Adhesive layer 813 Insulating layer 814 Conductive layer 815 Insulating layer 816 Conductive layer 817 Insulating layer 817a Insulating layer 817b Insulating layer 820 Transistor 821 Insulating layer 822 Transistor 823 Adhesive layer 824 Adhesive layer 825 Connector 827 Spacer 830 Light-emitting element 831 Lower electrode 833 EL layer 835 Upper electrode 841 Adhesive layer 843 Insulating layer 845 Coloring layer 847 Light-shielding layer 849 Overcoat 857 Conductive layer 857a Conductive layer 857b Conductive layer 862 EL layer 864 Conductive layer 7100 Portable information terminal 7101 Housing 7102 Display unit 7103 Band 7104 Buckle 7105 Operation button 7106 Input / Output Terminals 7107 Icons 7200 Lighting Device 7201 Base 7202 Light Emitting Part 7203 Operation Switch 7210 Lighting Device 7212 Light Emitting Part 7220 Lighting Device 7222 Light Emitting Part 7300 Touch Panel 7301 Housing 7302 Display Unit 7303 Operation Button 7304 Member 7305 Control Unit 7400 Mobile Phone 7401 Housing 7402 Display Unit 7403 Operation Button 7404 External Connection Port 7405 Speaker 7406 Microphone

Claims

【Claim 1】 A touch panel having flexibility, comprising a display panel, a touch sensor, and an adhesive layer, wherein the display panel has flexibility, the touch sensor has flexibility, the adhesive layer is positioned between the display panel and the touch sensor, the adhesive layer has a first portion, a second portion, and a third portion, the Young's modulus of the first portion is 1 kPa or more and 300 kPa or less, the thickness of the second portion is 0.1 mm or more and 1 mm or less, and the transmittance of the third portion is 70% or more. A touch panel.

Images