Semiconductor manufacturing apparatus, semiconductor device manufacturing method and pickup method

Abstract

To provide a technique capable of reducing the occurrence of pick-up errors.SOLUTION: A semiconductor manufacturing apparatus includes a wafer holder that holds a wafer ring on which a dicing tape attached to a wafer divided into dies is held, a peeling unit that assists in picking up a die from the dicing tape, and a control unit configured to set peeling conditions, which are conditions for the operation of the peeling unit, on the basis of peripheral information, which is information about the placement of dies in the peripheral area of the die to be picked up.SELECTED DRAWING: Figure 13

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to, for example, a die bonder having a peeling unit.

Background Art

[0002] As one step in the manufacturing process of a semiconductor device, there is a peeling step of peeling a die separated from a wafer from a dicing tape. In the peeling step, for example, the die is pushed up by a push-up unit from the back surface of the dicing tape, and is peeled one by one from the dicing tape held by the wafer supply unit, and the die is picked up using a suction nozzle such as a collet provided on a pick-up head or a bond head.

[0003] The dicing tape held on the wafer ring is stretched to widen the interval between the dies, thereby improving the pick-up property of the dies (Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] As the die pick-up progresses, the tension of the dicing tape is different between the portion where the die is picked up and the portion where the die remains. For this reason, depending on the peeling conditions of the peeling unit that assists in picking up the die from the dicing tape such as the push-up unit, pick-up errors may occur.

[0006] An object of the present disclosure is to provide a technology capable of reducing the occurrence of pick-up errors. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problem

[0007] The outline of typical ones among the present disclosures is briefly described as follows. That is, the semiconductor manufacturing apparatus includes a wafer stage that holds a wafer ring on which a dicing tape attached to a wafer divided into dies is held, a peeling unit that assists in picking up the dies from the dicing tape, and a control unit configured to set peeling conditions that are the operating conditions of the peeling unit based on peripheral information that is the arrangement information of the dies in the peripheral area of the die to be picked up.

Advantages of the Invention

[0008] According to the present disclosure, it is possible to reduce the occurrence of pickup errors.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

[0010] Hereinafter, embodiments will be described with reference to the drawings. However, in the following description, the same reference numerals may be given to the same components and repeated descriptions may be omitted. Note that, for the sake of clarity of explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual aspect. Also, the dimensional relationships and ratios of the elements are not necessarily consistent among the plurality of drawings.

[0011] The configuration of a die bonder which is an embodiment of a semiconductor manufacturing apparatus will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic top view showing a configuration example of the die bonder in the embodiment. FIG. 2 is a diagram for explaining the schematic configuration when viewed from the direction of arrow A in FIG. 1. FIG. 3 is a schematic cross-sectional view showing the main part of the wafer supply unit shown in FIG. 1.

[0012] The die bonder 1 generally includes a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transfer unit 50, a substrate supply unit 60, a substrate discharge unit 70, and a control unit (control device) 80. The Y2 - Y1 direction is the front - rear direction of the die bonder 1, the X2 - X1 direction is the left - right direction, and the Z1 - Z2 direction is the up - down direction. The wafer supply unit 10 is arranged on the front side of the die bonder 1, and the bonding unit 40 is arranged on the rear side.

[0013] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding stage 12, a peeling unit 13, and a wafer recognition camera 14.

[0014] The wafer cassette lifter 11 moves a wafer cassette (not shown) in which a plurality of wafer rings WR are stored up and down to the wafer transfer height. A wafer alignment chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding stage 12, or takes it out from the wafer holding stage 12 and stores it in the wafer cassette.

[0015] The wafer holding stage 12 has an expand ring 121 that holds the wafer ring WR and a support ring 122 that horizontally positions the dicing tape DT held by the wafer ring WR. The peeling unit 13 is arranged inside the support ring 122.

[0016] A wafer W is adhered (stuck) on the dicing tape DT, and the wafer W is divided into a plurality of dies D. A film - like adhesive material DF called a die attach film (DAF) is pasted between the wafer W and the dicing tape DT. The adhesive material DF cures by heating.

[0017] The wafer holding stage 12 is moved in the X1-X2 direction and the Y1-Y2 direction by a driving unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. Also, the wafer holding stage 12 rotates the wafer ring WR within the XY plane by a driving unit (not shown). The peeling unit 13 is moved in the vertical direction by a driving unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT. The wafer holding stage 12 and the peeling unit 13 constitute a pickup device (semiconductor manufacturing device). The pickup device may include a pickup unit 20.

[0018] When the die D is pushed up, the wafer holding stage 12 lowers the expand ring 121 that holds the wafer ring WR. At this time, since the support ring 122 does not lower, the dicing tape DT held by the wafer ring WR is stretched, the interval between the dies D widens, interference and contact between the individual dies D are prevented, and conditions are created such that the individual dies are easily separated and pushed up. The expand ring 121 and the support ring 122 together are referred to as an expander. The peeling unit 13 advances the peeling of the die D by pushing up the die D from below the die, and improves the pick-up property of the die D by the collet.

[0019] The wafer recognition camera 14 recognizes the pick-up position of the die D picked up from the wafer W or inspects the surface of the die D.

[0020] The pickup unit 20 has a pickup head 21 and a Y driving unit 23. The pickup head 21 is provided with a collet 22 that sucks and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y driving unit 23 moves the pickup head 21 in the Y1-Y2 direction. The pickup unit 20 has driving units (not shown) that move the pickup head 21 up and down, rotate it, and move it in the X direction.

[0021] The intermediate stage portion 30 includes an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 is provided with suction holes for sucking the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is a placement stage on which the die D is placed and also a pickup stage from which the die D is picked up.

[0022] The bonding portion 40 includes a bond head 41, a Y drive unit 43, a substrate recognition camera 44, and a bond stage 46. A collet 42 for sucking and holding the die D at the tip is provided on the bond head 41. The Y drive unit 43 moves the bond head 41 in the Y1 - Y2 direction. The substrate recognition camera 44 images a position recognition mark (not shown) of the substrate S and recognizes the bonding position. Here, on the substrate S, a plurality of product areas (hereinafter referred to as package areas P), which ultimately become one package, are formed. The position recognition marks are provided for each package area P. When the die D is placed on the substrate S, the bond stage 46 is raised to support the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum - sucking the substrate S and can fix the substrate S. The bond stage 46 has a heating unit (not shown) for heating the substrate S. The bonding portion 40 has drive units (not shown) for moving the bond head 41 up and down, rotating, and moving in the X direction.

[0023] With such a configuration, the bond head 41 corrects the pickup position and posture based on the imaging data of the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds onto the package area P of the substrate S based on the imaging data of the substrate recognition camera 44, or bonds in a form of laminating on the die that has already been bonded on the package area P of the substrate S.

[0024] The transfer unit 50 includes a transfer claw 51 that grabs and transfers the substrate S, and a transfer lane 52 along which the substrate S moves. The substrate S is moved in the X direction by driving a nut (not shown) of the transfer claw 51 provided in the transfer lane 52 with a ball screw (not shown) provided along the transfer lane 52. With such a configuration, the substrate S moves from the substrate supply unit 60 to the bonding position along the transfer lane 52, and after bonding, moves to the substrate discharge unit 70 and delivers the substrate S to the substrate discharge unit 70.

[0025] The substrate supply unit 60 takes out the substrate S stored in the transfer jig and carried in, from the transfer jig and supplies it to the transfer unit 50. The substrate discharge unit 70 stores the substrate S transferred by the transfer unit 50 in the transfer jig.

[0026] Next, the control unit 80 will be described with reference to FIG. 4. FIG. 4 is a block diagram showing a schematic configuration of the control system of the die bonder shown in FIG. 1.

[0027] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, an optical system 88, etc. The control unit 80 generally includes a control and arithmetic device 81 mainly composed of a CPU (Central Processing Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 includes a main storage device 82a and an auxiliary storage device 82b. The main storage device 82a is composed of a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. that store control data, image data, etc. necessary for control.

[0028] The input / output device 83 includes a monitor 83a for displaying the device state, information, etc., a touch panel 83b for inputting the operator's instructions, a mouse 83c for operating the monitor 83a, and an image capturing device 83d for capturing image data from the optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the XY table (not shown) of the wafer supply unit 10, the ZY drive shaft of the bond head table, the drive unit of the peeling unit 13, etc. The I / O signal control device 83f captures or controls signals from a signal unit 87 including switches, volumes, etc. for controlling the brightness of various sensors, lighting devices, etc. The optical system 88 includes a wafer recognition camera 14, a stage recognition camera 34, and a substrate recognition camera 44. The control and arithmetic device 81 fetches necessary data via the bus line 84, performs arithmetic operations, controls the pickup head 21, etc., and sends information to the monitor 83a, etc.

[0029] A part of the manufacturing process of the semiconductor device using the die bonder 1 (manufacturing method of the semiconductor device) will be described with reference to FIG. 5. FIG. 5 is a flowchart showing the manufacturing method of the semiconductor device using the die bonder shown in FIG. 1. In the following description, the operations of each part constituting the die bonder 1 are controlled by the control unit 80.

[0030] (Wafer loading process: Step S1) A wafer cassette (not shown) storing the wafer ring WR is loaded into the wafer cassette lifter 11. The wafer supply unit 10 takes out the wafer ring WR from the wafer cassette filled with the wafer ring WR and loads it onto the wafer holding table 12. Note that the wafer W has been inspected for each die in advance by an inspection device such as a prober, and wafer map data indicating the grades and defects of the dies with different electrical characteristics has been generated. This wafer map data is stored in the storage device of the control unit 80.

[0031] (Substrate loading process: Step S2) A transfer jig storing the substrate S is loaded into the substrate supply unit 60. The substrate supply unit 60 takes out the substrate S from the transfer jig. The taken-out substrate S is carried into the bonding unit 40 via the transfer unit 50.

[0032] (Pick-up process: Process S3) After Process S1, the wafer holding stage 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and positioning and surface inspection of the die D are performed based on the image data obtained by the photographing. By performing image processing on the image data, the deviation amounts (in the X, Y, and θ directions) of the die D on the wafer holding stage 12 from the die position reference point of the die bonder are calculated and positioning is performed. The die position reference point is held in advance as a predetermined position of the wafer holding stage 12 in the initial setting of the apparatus. By performing image processing on the image data, surface inspection of the die D is performed.

[0033] The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pick-up head 21. The die D peeled off from the dicing tape DT is adsorbed and held by the collet 22 provided on the pick-up head 21, and is carried to and placed on the intermediate stage 31.

[0034] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and positioning and surface inspection of the die D are performed based on the image data obtained by the photographing. By performing image processing on the image data, the deviation amounts (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder are calculated and positioning is performed. The die position reference point is held in advance as a predetermined position of the intermediate stage 31 in the initial setting of the apparatus. By performing image processing on the image data, surface inspection of the die D is performed.

[0035] The pickup head 21 that has transported the die D to the intermediate stage 31 is returned to the wafer supply unit 10. According to the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, the die D is peeled off one by one from the dicing tape DT according to the same procedure.

[0036] (Bonding process: Process S4) The substrate S is transported to the bonding stage 46 by the transport unit 50. The substrate S placed on the bonding stage 46 is imaged by the substrate recognition camera 44, and based on the image data obtained by the imaging, the positioning and surface inspection of the substrate S are performed. By image-processing the image data, the deviation amounts (in the X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1 are calculated. The substrate position reference point is held in advance as the initial setting of the apparatus at a predetermined position of the bonding unit 40. By image-processing the image data, the surface inspection of the substrate S is performed.

[0037] The adsorption position of the bonding head 41 is corrected based on the deviation amount of the die D on the intermediate stage 31 calculated in Process S3, and the die D is adsorbed by the collet 42. The die D is bonded to a predetermined location on the substrate S supported by the bonding stage 46 by the bonding head 41 that has adsorbed the die D from the intermediate stage 31. Here, the predetermined location on the substrate S is the package area P of the substrate S, or the area where an element has already been placed and an element is to be bonded in addition thereto, or the bonding area of the elements to be laminated and bonded. The die D bonded to the substrate S is imaged by the substrate recognition camera 44, and an inspection such as whether the die D is bonded to the desired position is performed based on the image data obtained by the imaging.

[0038] The bonding head 41 that has bonded the die D to the substrate S is returned to the intermediate stage 31. According to the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until the die D is bonded to all the package areas P of the substrate S.

[0039] (Substrate unloading process: Process S5) The substrate S bonded with the die D is conveyed to the substrate unloading unit 70. The substrate S is taken out from the conveying claws 51 at the substrate unloading unit 70 and stored in a conveying jig. The conveying jig storing the substrate S is unloaded from the die bonder 1.

[0040] As described above, the die D is mounted on the substrate S and unloaded from the die bonder 1. Then, for example, the conveying jig storing the substrate S on which the die D is mounted is conveyed to the wire bonding process, and the electrodes of the die D are electrically connected to the electrodes of the substrate S via an Au wire or the like. Then, the substrate S is conveyed to the molding process, and the die D and the Au wire are sealed with a molding resin (not shown), thereby completing the semiconductor package.

[0041] Next, the peeling unit 13 will be described with reference to FIGS. 6 and 7. FIG. 6 is a top view of the peeling unit shown in FIG. 2. FIG. 7 is a diagram schematically showing a cross section of the main part of the peeling unit shown in FIG. 2.

[0042] The peeling unit 13 is provided with a block portion 131 on a cylindrical dome 132. At the center of the upper surface of the dome 132, there is an opening 1321 that enables the vertical movement of the block portion 131. A plurality of suction ports 1322 and a plurality of grooves 1323 connecting the plurality of suction ports 1322 are provided at the outer peripheral portion of the opening 1321 on the upper surface of the dome 132. The inside of the suction port 1322 is depressurized by a suction mechanism (not shown) when the peeling unit 13 is lifted and its upper surface is brought into contact with the back surface of the dicing tape DT. At this time, the back surface of the dicing tape DT is sucked downward and adheres closely to the upper surface of the dome 132.

[0043] The block portion 131 has blocks BLK1 to BLK4 that push up the dicing tape DT upward. The three outer blocks BLK1 to BLK3 are square tubular and have a square opening that penetrates in the Z1 - Z2 direction. The innermost block BLK4 is square columnar. Inside the first block BLK1, a second block BLK2 that is smaller in size than the first block is arranged. And inside the second block BLK2, a third block BLK3 that is smaller in size than the second block BLK2 is arranged. And inside the third block BLK3, a fourth block BLK4 that is smaller in size than the third block BLK3 is arranged.

[0044] Among the four blocks BLK1 to BLK4, the outermost block BLK1 is sized to be slightly smaller in outer shape than the outer periphery of the die D to be peeled. As a result, the corner portions that become the outer periphery of the upper surface of the block BLK1 are positioned slightly inside the outer edge of the die D, so that the force for peeling the two can be concentrated at the location (the outermost periphery of the die D) that becomes the starting point when the die D and the dicing tape DT are peeled.

[0045] As shown in FIG. 7, the blocks BLK1 to BLK4 can move up and down independently by the drive shafts ND1 to ND4 of the drive unit 133. For example, the drive shafts ND1 to ND4 are each composed of a motor and a plunger mechanism that converts the rotation of the motor into vertical movement.

[0046] Next, the setting method and control of the operation of the peeling unit 13 will be described.

[0047] Based on the parameter table, the control unit 80 is configured to control drive shafts ND1 to ND4 that drive blocks BLK1 to BLK4 respectively. The operations of blocks BLK1 to BLK4 are controlled such that pick-up conditions (peeling conditions) such as the time of each step or the time difference (TL), the rising or falling speed (V) of the block, and the height (H) of the block are set in the parameter table. Here, the time difference is the operation time difference (interval time) for adjusting the processing time between each block. In other words, the time difference is the time from the end of the rising or falling of the block in each step until the start of the rising or falling of the block in the next step.

[0048] The parameter table can be set, for example, by the user entering set values into the items of the time chart recipe through a GUI (Graphical User Interface). Also, a plurality of time chart recipes with different setting items can be prepared, and the user can select one time chart recipe from the plurality of time chart recipes through the GUI and enter set values into the items of the selected time chart recipe. Alternatively, the user can perform data communication of a time chart recipe with preset values from an external device to a semiconductor manufacturing apparatus such as a die bonder, or install it from an external storage device to the semiconductor manufacturing apparatus to set the parameter table. The external storage device is, for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card. Also, the control unit 80 can rewrite (set) the parameter table in real time based on information obtained from sensors, images of recognition cameras, etc., and change the pick-up operation (pick-up conditions).

[0049] As described above, by setting the parameter table, it is possible to freely set the operations of each block BLK1 to BLK4 of the peeling unit 13 within the pick-up operation steps, and the peeling unit 13 can perform various operations.

[0050] For example, the peeling unit 13 can perform an operation of simultaneously pushing up blocks BLK1 to BLK4, then further simultaneously pushing up blocks BLK2 to BLK4, then further simultaneously pushing up blocks BLK3 and BLK4, and then further pushing up block BLK4 to form a pyramid shape. Also, the peeling unit 13 can perform an operation of pushing down blocks BLK1, BLK2, and BLK3 in this order after simultaneously pushing up blocks BLK1 to BLK4.

[0051] An operation example of the peeling unit 13 will be described with reference to FIGS. 8 to 10. FIG. 8 is a diagram for explaining a pushing-up sequence in an operation example of the peeling unit shown in FIG. 6. FIG. 9 is a diagram showing an example of the block operation timing of the sequence in FIG. 8. FIG. 10 is a diagram showing an example of a parameter table corresponding to the block operation timing in FIG. 9.

[0052] The pickup operation starts when the target die D on the dicing tape DT is positioned between the peeling unit 13 and the collet 22. When the positioning is completed, the dicing tape DT is adsorbed onto the upper surface of the peeling unit 13 by performing a vacuum draw through the suction port 1322 of the peeling unit 13 and the gaps between the blocks BLK1 to BLK4. At this time, the upper surfaces of the blocks BLK1 to BLK4 are at the same height (initial position) as the upper surface of the dome 132. In that state, vacuum is supplied from a vacuum source (not shown), and the collet 22 descends while performing a vacuum draw toward the device surface of the die D and lands on the upper surface of the die D.

[0053] Thereafter, blocks BLK1 to BLK4 simultaneously rise at a predetermined speed (s1) to a predetermined height (h1) and reach the first state shown in A of FIG. 8. Here, as shown in FIG. 9, if the time for blocks BLK1 to BLK4 to reach h1 is t1, then t1 = h1 / s1. Thereafter, it waits for a predetermined time (t2). The die D rises while being sandwiched between the collet 22 and blocks BLK1 to BLK4. However, since the peripheral portion of the dicing tape DT remains vacuum-sucked at the suction port 1322 of the dome 132 which is the periphery of the peeling unit 13, tension is generated around the die D. As a result, peeling of the dicing tape DT starts around the die D.

[0054] Subsequently, the outermost block BLK1 descends at a constant speed (s2) to a height below the same as the upper surface of the dome 132 and reaches the second state shown in B of FIG. 8. Here, as shown in FIG. 9, if the time for the block BLK1 to reach a predetermined height (-h2) is t3, then t3 = (h1 + h2) / s2.

[0055] After a predetermined time (t10) has elapsed since the outermost block BLK1 starts to descend, in parallel with the descent of the outermost block BLK1, the second block BLK2 descends at a constant speed (s2) to a height below the same as the upper surface of the dome 132 and reaches the third state shown in C of FIG. 8. Here, when the second block BLK2 descends to the height of the upper surface of the dome 132, the support of the dicing tape DT is lost, and due to the tension of the dicing tape DT, the peeling of the dicing tape DT further progresses.

[0056] After a predetermined time (t11) has elapsed since the second block BLK2 started to descend, in parallel with the descent of the second block BLK2, the third block BLK3 descends at a constant speed (s2) to a height equal to or lower than the upper surface of the dome 132 and reaches the fourth state shown as D in FIG. 8. Here, when the third block BLK3 descends to the height of the upper surface of the dome 132, the support of the dicing tape DT is lost, and due to the tension of the dicing tape DT, the peeling of the dicing tape DT further progresses. As a result, the die D is peeled off from the dicing tape DT except at the location where the dicing tape DT is in contact with the block BLK4.

[0057] After a predetermined time (t6) has elapsed since the descent of the third block BLK3 stopped, the blocks BLK1 to BLK3 rise at a constant speed (s3), the collet 22 rises, and the fourth block BLK4 descends at a constant speed (s4) to return to the initial position. Here, if the time for the blocks BLK1 to BLK3 to reach the initial position is t8, then t8 = h2 / s3, and if the time for the block BLK4 to reach the initial position is t9, then t9 = h1 / s4. As a result, the operation of peeling the die D from the dicing tape DT is completed. The peeling unit 13 peels a part of the die D from the dicing tape DT and assists the collet 22 in picking up the die D from the dicing tape DT.

[0058] The operation based on the parameter table in FIG. 10 will be described in detail. TL shown in FIG. 10 is the time difference, V is the speed, and H is the height.

[0059] (1) Block BLK1 The time difference in the first step (STEP1) is t2, and the block BLK1 rises from the start of the first step at a speed of s1 to a height of h1 and maintains the state at the height of h1. The first step (STEP1) of the block BLK1 corresponds to the first state in FIG. 8.

[0060] The time difference in the second step (STEP2) is (t4 + t5 + t6). Block BLK1 descends from the start of the second step at a speed of s2 to a height of -h2 and maintains its state at the height of -h2. The second step (STEP2) of block BLK1 corresponds to the second state to the fourth state in FIG. 8.

[0061] The time difference in the third step (STEP3) is t9. Block BLK1 ascends from the start of the third step at a speed of s3 to the initial position (height is 0).

[0062] (2) Block BLK2 The time difference in the first step (STEP1) is (t2 + t10). Block BLK2 ascends from the start of the first step at a speed of s1 to a height of h1 and maintains its state at the height of h1. The first step (STEP1) of block BLK2 corresponds to the first state and the second state in FIG. 8.

[0063] The time difference in the second step (STEP2) is (t5 + t6). Block BLK2 descends from the start of the second step at a speed of s2 to a height of -h2 and maintains its state at the height of -h2. The second step (STEP2) of block BLK2 corresponds to the third state and the fourth state in FIG. 8.

[0064] The time difference in the third step (STEP3) is t9. Block BLK2 ascends from the start of the third step at a speed of s3 to the initial position (height is 0).

[0065] (3) Block BLK3 The time difference in the first step (STEP1) is (t2 + t10 + t11). Block BLK3 ascends from the start of the first step at a speed of s1 to a height of h1 and maintains its state at the height of h1. The first step (STEP1) of block BLK3 corresponds to the first state, the second state and the third state in FIG. 8.

[0066] The time difference of the second step (STEP2) is t6. Block BLK3 descends from the start of the second step at a speed of s2 to a height of -h2 and maintains its state at the height of -h2. The second step (STEP2) of block BLK3 corresponds to the fourth state in FIG. 8.

[0067] The time difference of the third step (STEP3) is t9. Block BLK3 ascends from the start of the third step at a speed of s3 to the initial position (height is 0).

[0068] (4) Block BLK4 The time difference of the first step (STEP1) is (t2 + t3 + t4 + t5 + t6). Block BLK4 ascends from the start of the first step at a speed of s1 to a height of h1 and maintains its state at the height of h1. The first step (STEP1) of block BLK4 corresponds to the first, second, third, and fourth states in FIG. 8.

[0069] The time difference of the second step (STEP2) is 0. Block BLK4 descends from the start of the second step at a speed of s4 to the initial position (height is 0).

[0070] The wafer map data will be described with reference to FIGS. 11 and 12. FIG. 11 is a diagram showing an example of the wafer map data in an embodiment. FIG. 12 is a diagram showing the wafer map data after picking up the dies of the first classification from the wafer corresponding to the wafer map data of FIG. 11.

[0071] As described above, the wafer map data includes data indicating the grade and defects of the dies, as shown in FIG. 11. The discriminated grades are here two types: the first classification described as "1" and the second classification described as "2" on the drawing. Note that the die described as "9" on the drawing is a defective product.

[0072] When picking up dies category by category, for example, after picking up all the dies of the first classification, the dies of the second classification may be picked up. After the pickup of the dies of the first classification is completed, the wafer map data as shown in FIG. 12 is obtained. In other words, when picking up the dies of the second classification, the wafer becomes full of gaps, and the tension of the dicing tape around the die to be picked up decreases. If the dies of the second classification are picked up under the same peeling conditions as those of the dies of the first classification after the pickup of the dies of the first classification is completed, pickup errors may occur.

[0073] Not limited to the pickup by grade, if the pickup is performed under the same peeling conditions from the beginning (when there are many dies) to the end (when there are few dies), pickup errors are likely to occur. For example, as the dies to be picked up decrease, if the pickup is performed under the same peeling conditions from the beginning to the end, pickup errors are likely to occur. Also, there may be a case where the wafer is carried out during the pickup of a single wafer and then carried in again. In this case, the ratio of the dies carried in is small. If the pickup is performed under the same peeling conditions as those of the wafer with a large die ratio, pickup errors are likely to occur.

[0074] Therefore, in the embodiment, the pickup is performed by changing the peeling conditions based on the peripheral information of the die to be picked up. This will be described with reference to FIGS. 11 to 16. FIG. 13 is a diagram showing the flow of pickup in this embodiment. FIG. 14 is a diagram for explaining the peripheral information. FIG. 15 is a diagram for explaining the relationship between the field of view of the wafer recognition camera shown in FIG. 2 and the wafer. FIG. 16 is a diagram showing an example pattern of the peripheral information. The steps described below are performed by the control unit 80.

[0075] (Step S11: Peripheral information setting) Pickup information indicating which die on the wafer has been picked up is set and held in the storage device. The pickup information is set or updated before each pickup. The pickup information is set based on the wafer map data.

[0076] The pick-up information immediately after picking up a die is the information of the position where there is no die. For example, assume that the die Ds in the upper right of the wafer map data shown in FIG. 11 is picked up. The die Ds is a die of the first classification, and the pick-up information immediately after picking up the die Ds is the information of the position of the die Ds. Thereafter, each time the pick-up of the die of the first classification is repeated, the pick-up information is updated, and after finishing the pick-up of the die of the first classification, the die of the second classification is picked up. The pick-up information immediately before picking up the die of the second classification is the information of the position of the die of the first classification shown in FIG. 11. In other words, the pick-up information is the information of the position of the blank (white) of the wafer map data shown in FIG. 12. The wafer map data shown in FIG. 12 is also pick-up information. The pick-up information changes each time of picking up.

[0077] Based on the pick-up information, the peripheral information of the die (pick-up target die) Dp to be picked up next is set. The peripheral information is the arrangement information such as the number, ratio, position, etc. of the dice in the peripheral area of the pick-up target die Dp. For example, the peripheral information of the pick-up target die Dp shown in FIG. 12 is the presence or absence of dice in the peripheral area of the pick-up target die Dp, and is the information shown in FIG. 14. In FIG. 14, there are dice in the three hatched places, and there are no dice in the five non-hatched places. In FIG. 14, the peripheral area of the pick-up target die Dp is the area adjacent to the pick-up target die Dp, and is a 3×3 range centered on the pick-up target die Dp. The peripheral area of the pick-up target die Dp may be a 5×5 range or a 7×7 range centered on the pick-up target die Dp.

[0078] Although an example of setting the peripheral information based on the pick-up information has been described, it may be set based on the recognition of the presence or absence of dice by the image data of the wafer recognition camera.

[0079] As shown in FIG. 15, when the die Dp to be picked up is arranged at the center of the viewing field IF of the wafer recognition camera 14, at least the die adjacent to the die Dp to be picked up is included in the viewing field IF of the wafer recognition camera 14. The die Dp to be picked up is photographed by the wafer recognition camera 14 to acquire image data. By recognizing the presence or absence of the die based on the image data, it is possible to acquire information on the presence or absence of the die around the die Dp to be picked up. Thereby, it becomes possible to set the peripheral information.

[0080] (Step S12: Peeling condition setting) Based on the peripheral information, the peeling condition is set. Also, the setting of the pickup condition is performed for each die to be picked up. Depending on the peripheral information, the peeling condition may not be changed. Here, the peeling condition is, for example, the height (h1), speed (s1), and time differences (t2, t2 + t10, t2 + t10 + t11, t2 + t3 + t4 + t5 + t6) of the blocks BLK1 to BLK4 as shown in FIG. 10.

[0081] If there are few dice around the die Dp to be picked up, the tension of the dicing tape DT around the die Dp to be picked up becomes small. In this case, it is necessary to change the peeling condition. For example, by increasing the pushing-up height (h1) or increasing the speed (s1), the tension of the dicing tape DT around the die Dp to be picked up can be increased. Also, by increasing the time differences (t2, t2 + t10, t2 + t10 + t11, t2 + t3 + t4 + t5 + t6), even with a small tension, the die Dp to be picked up can be peeled from the dicing tape DT. In other words, the peeling condition is set to a condition in which the die Dp to be picked up is easily peeled.

[0082] Based on the die arrangement pattern (patternized peripheral information) as shown in FIG. 16, the peeling conditions may be changed. In FIG. 16, the hatched areas around the die Dp to be picked up indicate the presence of dies, and the non-hatched areas indicate the absence of dies. Not all die arrangement patterns are shown in FIG. 16. For each die arrangement pattern shown in FIG. 16, it may not be necessary to change the peeling conditions.

[0083] A1 is an arrangement pattern where there are no dies in any of the peripheries adjacent to the die Dp to be picked up. E5 is an arrangement pattern where there are dies in all of the peripheries adjacent to the die Dp to be picked up.

[0084] A2 to A5 are example arrangement patterns where there are dies in the peripheries adjacent to the corners of the die Dp to be picked up with respect to A1, and the number of dies increases in the order of A2 to A5. In other words, the tension of the dicing tape DT around the die Dp to be picked up increases in the order of A2 to A5.

[0085] B1, C1, D1, and E11 are example arrangement patterns where there are dies in the peripheries adjacent to the sides of the die Dp to be picked up with respect to A1, and the number of dies increases in the order of B1, C1, D1, and E1. In other words, the tension of the dicing tape DT around the die Dp to be picked up increases in the order of B1, C1, D1, and E1.

[0086] The tension of the dicing tape DT around the die Dp to be picked up is the smallest for A1 and the largest for E5.

[0087] (Step S13: Pickup) The block portion 131 of the peeling unit 13 is operated according to the set pickup conditions to peel the die D from the dicing tape DT, and the die D is picked up by the pickup head 21.

[0088] (Step S14: Judgment) Determine whether all the dies to be picked up have been picked up (the pickup has ended). If the pickup has not ended (in the case of NO), return to step 12. If the pickup has ended (YES), end.

[0089] According to this embodiment, the peeling condition is changed based on the peripheral information indicating the peripheral state of the die Dp to be picked up. Since the peeling condition is optimized for each die to be picked up, it is possible to reduce pickup errors.

[0090] Since pickup errors are reduced, the stoppage of the apparatus is reduced. As a result, the apparatus operation time increases and it becomes possible to improve MTBA (Mean Time Between Attentions).

[0091] As described above, the disclosure made by the present inventors has been specifically described based on the embodiments. However, it goes without saying that the present disclosure is not limited to the above embodiments and can be variously modified.

[0092] In the embodiment, an example in which the peeling unit is composed of a push-up block that moves the block up and down has been described. The peeling unit is not limited to this, and any unit that assists pickup and can change the peeling condition may be used. For example, a needle may be used instead of the block. Further, the peeling unit may slide the block or the plate.

[0093] Further, the peeling unit may peel the die from the dicing tape by heat (heating and melting), ultraviolet (UV) light (photoirradiation chemical modification), or laser light (photoirradiation heating and melting). When there are few dies around the die Dp to be picked up, the heating temperature is increased, the irradiation intensity of the UV light or the laser light is increased, or the irradiation time is lengthened.

[0094] In the embodiment, an example in which the number of blocks is four has been described. However, the number of blocks may be less than or more than four depending on the die size and the like.

[0095] In the embodiment, an example using a die attach film has been described. However, a preform portion for applying an adhesive to the substrate may be provided, and the die attach film may not be used.

[0096] In the embodiment, a die bonder that picks up a die from a wafer supply unit with a pick-up head and places it on an intermediate stage, and then bonds the die placed on the intermediate stage to a substrate with a bonding head has been described. However, the present invention is not limited thereto, and it is applicable to a die bonding apparatus that picks up a die from a wafer supply unit.

[0097] For example, it is also applicable to a die bonder that does not have an intermediate stage and a pick-up head, and bonds the die of the wafer supply unit to a substrate with a bonding head.

[0098] Further, it is applicable to a flip chip bonder that does not have an intermediate stage, picks up a die from a wafer supply unit, rotates the die pick-up head upward to transfer the die to a bonding head, and bonds the die to a substrate with the bonding head.

[0099] In the embodiment, a die bonder has been described as an example, but the present invention is also applicable to a semiconductor manufacturing apparatus that places the picked-up die on a tray.

Explanation of Reference Numerals

[0100] 1 ··· Die bonder (semiconductor manufacturing apparatus) 12 ··· Wafer holding stage 13 ··· Peeling unit 80 ··· Control unit

Claims

1. A wafer holding stage that holds a wafer ring that holds a dicing tape attached to a wafer divided into dies, A peeling unit that assists in picking up the die from the dicing tape, A control unit configured to set a peeling condition, which is a condition for the operation of the peeling unit, based on peripheral information that is die arrangement information in the peripheral region of the die to be picked up, A semiconductor manufacturing apparatus comprising the above.

2. In the semiconductor manufacturing apparatus according to Claim 1, The semiconductor manufacturing apparatus, wherein the peripheral information is information on whether there is a die in a region adjacent to the die to be picked up.

3. In the semiconductor manufacturing apparatus according to Claim 2, The semiconductor manufacturing apparatus, wherein the control unit is configured to set the peripheral information based on pickup information indicating which position of the wafer the die has been picked up from.

4. In the semiconductor manufacturing apparatus according to Claim 2, The semiconductor manufacturing apparatus, wherein the control unit is configured to photograph the die to be picked up and its periphery to obtain image data, and set the peripheral information based on the obtained image data.

5. In the semiconductor manufacturing apparatus according to Claim 2, The semiconductor manufacturing apparatus, wherein the control unit is configured to pattern the peripheral information into a plurality of patterns and set the peeling condition for each pattern.

6. In the semiconductor manufacturing apparatus according to Claim 1, The semiconductor manufacturing apparatus, wherein the peeling unit is a lifting unit that lifts a block or a needle, or a unit that slides a block or a plate, or a unit that peels a die from a dicing tape by heat, ultraviolet light, or laser light.

7. In the semiconductor manufacturing apparatus according to Claim 6, The semiconductor manufacturing apparatus, wherein the lifting unit has a dome having a block portion, an opening that enables vertical movement of the block portion, and a suction port provided on the outer periphery of the opening, and is configured to contact the dicing tape.

8. In the semiconductor manufacturing apparatus according to Claim 7, The semiconductor manufacturing apparatus, wherein the peeling condition is the lifting height of the block of the block portion, the lifting speed, and the time from when the movement of the block stops until the next movement starts.

9. In the semiconductor manufacturing apparatus according to Claim 8, The semiconductor manufacturing apparatus, wherein the control unit is configured to increase the lifting height, increase the lifting speed, and increase the time as the number of dies in the periphery of the die to be picked up is smaller.

10. In the semiconductor manufacturing apparatus of Claim 1, a semiconductor manufacturing apparatus further comprising a head for picking up the die.

11. a step of loading the wafer ring into the semiconductor manufacturing apparatus of Claim 1; a step of picking up the die by a pickup head in cooperation with the peeling unit; A method of manufacturing a semiconductor device including the steps.

12. holding a wafer ring that holds a dicing tape attached to a wafer diced into dies, setting peeling conditions, which are operating conditions of the peeling unit, based on peripheral information that is arrangement information of the dies in a peripheral area of a die to be picked up, A pickup method of picking up the die by a collet in cooperation with the peeling unit that operates based on the peeling conditions.

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