Thin film formation method and manufacturing method of memory device including the same

Abstract

To realize an ideal atomic layer deposition (ALD) through a thin film formation method using a hybrid precursor simultaneously including at least one halogen group and an organic ligand.SOLUTION: According to an embodiment of the invention, a thin film formation method includes: a metal precursor supply step where a metal precursor is supplied to an inside of a chamber in which a substrate is placed and the metal precursor is adsorbed onto the substrate; a step where the inside of the chamber is purged; and a thin film formation step where a thin film is formed by reacting with a reactant is supplied to an inside the chamber to react with the metal precursor adsorbed. The metal precursor includes one or more halogen groups and one or more organic ligand.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a method for forming a thin film and a method for manufacturing a memory device including the same, and more particularly to a method for forming a thin film using a metal precursor including a halogen group and an organic ligand and a method for manufacturing a memory device including the same. [Background technology]

[0002] In the semiconductor processing field, deposition processes are important processes for depositing materials onto substrates. As the geometry of electronic devices continues to shrink and device density increases, the aspect ratio of features gradually increases. Therefore, processes with good step coverage are attracting attention, and atomic layer deposition (ALD) in particular has attracted considerable interest.

[0003] Currently, DRAM in the memory field and logic memory in the non-memory field have reached their physical limits, making it difficult to form uniform thin films even with ALD. To overcome this limitation, there is a growing need to form thin films of uniform thickness on 3D structures with very large aspect ratios.

[0004] Metal halides are widely used as precursors for forming metal thin films in various deposition processes due to their low cost, economical efficiency, reactivity, and thermal stability. However, since most of them exist in a solid state at room temperature, they are often difficult to use in deposition processes, and deposition is only possible at high temperatures. Furthermore, halogen ions generated as by-products cause undesirable etching, making thickness control difficult.

[0005] Organometallic compounds are the most commonly used ALD precursors because they are non-toxic and highly volatile. Ideally, ALD involves a self-limiting surface reaction in which only one atomic layer is formed through repeated precursor supply and removal, with no further reaction occurring. However, in actual ALD processes using organometallic compounds, achieving a self-limiting surface reaction is extremely difficult due to the formation of multilayers caused by intermolecular forces and the decomposition of organic ligands with low thermal stability.

[0006] Therefore, it usually takes a lot of time to optimize the process conditions to solve these problems. Summary of the Invention [Problem to be solved by the invention]

[0007] The object of the present invention is to provide a thin film formation method that realizes ideal ALD through a thin film formation method using a hybrid precursor that simultaneously contains at least one halogen group and an organic ligand, thereby making it easy to control the thickness of the thin film and significantly improving step coverage, and a method for manufacturing a memory device including the same.

[0008] Another object of the present invention is to provide a method for forming a thin film that can minimize contamination in the thin film due to halogens, and a method for manufacturing a memory device including the same.

[0009] Further objects of the present invention will become more apparent from the following detailed description. [Means for solving the problem]

[0010] According to one embodiment of the present invention, a thin film formation method includes a metal precursor supplying step of supplying a metal precursor into a chamber in which a substrate is placed and causing the metal precursor to adsorb onto the substrate, a step of purging the inside of the chamber, and a thin film formation step of supplying a reactant into the chamber and reacting with the adsorbed metal precursor to form a thin film, wherein the metal precursor includes one or more halogen groups and one or more organic ligands.

[0011] The metal precursor can be represented by the following <Chemical Formula 1>. [ka] In the <Chemical Formula 1>, n is independently selected from integers of 1 to 2, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0012] The metal precursor can be represented by the following <Chemical Formula 2>. [ka] In the <Chemical Formula 2>, n is independently selected from integers of 1 to 3, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0013] The metal precursor can be represented by any one of the following <Chemical Formula 3> to <Chemical Formula 5>. [ka] [ka] [ka] In the <Chemical Formula 3> to <Chemical Formula 5>, R1 to R5 are each independently selected from hydrogen, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms; X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0014] The metal precursor can be represented by the following <Chemical Formula 6>. [ka] In the <Chemical Formula 6>, n is independently selected from integers of 1 to 4, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0015] The metal precursor can be represented by any one of the following <Chemical Formula 7> to <Chemical Formula 9>. [ka] [ka] [ka] In the <Chemical Formula 7> to <Chemical Formula 9>, R1 to R5 are each independently selected from hydrogen, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms; X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0016] The metal precursor can be represented by the following <Chemical Formula 10>. [ka] In the <Chemical Formula 10>, n is independently selected from integers of 1 to 4, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0017] The thin film formation method can be carried out at a temperature of 50 to 700°C.

[0018] The thin film may be any one of a metal film, a metal oxide, a metal nitride, and a metal sulfide.

[0019] According to an embodiment of the present invention, a method for manufacturing a volatile memory device may include the above-described thin film forming method.

[0020] According to an embodiment of the present invention, a method for manufacturing a nonvolatile memory device may include the above-described thin film forming method. [Effects of the Invention]

[0021] According to one embodiment of the present invention, a thin film with good step coverage can be formed. In particular, since the deposition rate is maintained constant, it is easy to control the thickness of the thin film. [Brief explanation of the drawings]

[0022] [Figure 1] 4 is a graph that schematically illustrates a supply period according to an embodiment of the present invention. [Figure 2] 1 is a schematic diagram illustrating the adsorption process of a metal precursor according to an embodiment of the present invention. [Figure 3]1A and 1B are schematic diagrams illustrating a process in which a metal precursor is adsorbed into a three-dimensional structure such as a hole, a trench, or a gap feature formed on a substrate according to an embodiment of the invention. [Figure 4] 1 is a graph showing the basic characteristics of ALD and a graph comparing the growth rates under conditions in which the supply amount of tantalum chloride is increased in an embodiment of the present invention and a comparative example. [Figure 5] 1 is a graph showing a supply period in an experiment for confirming a self-etching phenomenon according to an embodiment of the present invention; [Figure 6] 1 shows the results of checking step coverage after depositing a niobium oxide film according to an embodiment of the present invention on a patterned wafer. DETAILED DESCRIPTION OF THE INVENTION

[0023] The present invention will now be described in more detail with reference to the accompanying Figures 1 to 6, which show preferred embodiments of the present invention. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to explain the present invention in more detail to those skilled in the art to which the invention pertains. Therefore, the shape of each element shown in the drawings may be exaggerated to emphasize a clearer description.

[0024] 1 is a graph showing a schematic diagram of a supply cycle according to an embodiment of the present invention. A substrate is loaded into a process chamber, and the following process conditions are adjusted. The process conditions may include substrate or process chamber temperature, chamber pressure, and gas flow rate, and the temperature is 50 to 700°C.

[0025] The substrate is exposed to the metal precursor supplied into the chamber, and the metal precursor is adsorbed onto the surface of the substrate. The precursor supply step is carried out at 50 to 700°C.

[0026] Specifically, the metal precursor can be represented by the following <Chemical Formula 1>. [ka] In the <Chemical Formula 1>, n is independently selected from integers of 1 to 2, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0027] Specifically, the metal precursor can be represented by the following <Chemical Formula 2>. [ka] In the <Chemical Formula 2>, n is independently selected from integers of 1 to 3, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0028] Specifically, the metal precursor can be represented by any one of the following <Chemical Formula 3> to <Chemical Formula 5>. [ka] [ka] [ka] In the <Chemical Formula 3> to <Chemical Formula 5>, R1 to R5 are each independently selected from hydrogen, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms; X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0029] Specifically, the metal precursor can be represented by the following <Chemical Formula 6>. [ka] In the <Chemical Formula 6>, n is independently selected from integers of 1 to 4, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0030] Specifically, the metal precursor can be represented by any one of the following <Chemical Formula 7> to <Chemical Formula 9>. [ka] [ka] [ka] In the <Chemical Formula 7> to <Chemical Formula 9>, R1 to R5 are each independently selected from hydrogen, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms; X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0031] Specifically, the metal precursor can be represented by the following <Chemical Formula 10>. [ka] In the <Chemical Formula 10>, n is independently selected from integers of 1 to 4, X is selected from halogen elements, L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands that bond with the elements N, O, P, and S.

[0032] The bidentate organic ligands referred to above include, but are not limited to, ethylenediamine, bipyridyl, acetylacetonate, oxalate, sulfonamide, bis(dimethylphosphino)ethane, and the like.

[0033] Figure 2 is a schematic diagram showing the adsorption process of a metal precursor according to an embodiment of the present invention. Like conventional metal halides, the metal precursor can generate corrosive gases and halogen ions during the adsorption process. The generated halogen ions can re-adsorb onto the surface, exhibiting a self-etching effect that volatilizes some of the adsorbed metal precursor, which can be interpreted as the reason for the low deposition rate.

[0034] In this case, the metal precursor according to the embodiment of the present invention has fewer halogen ligands than conventional metal halides, so excessive etching does not occur, and large organic ligands such as cyclopentadiene suppress halogen substitution, so thin films can be formed stably.

[0035] FIG. 3 is a schematic diagram illustrating a process in which a metal precursor is adsorbed into a three-dimensional structure such as a hole, a trench, or a gap feature formed on a substrate according to an embodiment of the present invention.

[0036] First, the metal precursors are adsorbed at high density on the top of the structure, generating corrosive gases and halogen ions during the adsorption process (1). Next, the generated halogen ions are re-adsorbed on the surface, volatilizing some of the adsorbed metal precursors (2). Next, the metal precursors that are volatilized on the top diffuse to the bottom through a cascading effect and act as secondary metal precursors (3). Next, the secondary metal precursors that have diffused to the bottom are adsorbed, ultimately forming a conformal thin film.

[0037] Thereafter, a purge gas (eg, an inert gas such as Ar) is supplied into the chamber to remove or purify any unadsorbed metal precursor or by-products.

[0038] The substrate is then exposed to reactants supplied into the chamber to form a thin film on the surface of the substrate. The reactants react with the metal precursor layer to form a thin film, which may be a metal film, metal oxide, metal nitride, or metal sulfide. The thin film formation process may be carried out at temperatures between 50 and 700°C.

[0039] Thereafter, a purge gas (for example, an inert gas such as Ar) is supplied into the chamber to remove or purify unreacted substances or by-products.

[0040] <Deposition speed comparison> - Comparative Example Niobium oxide films were formed on silicon substrates using Cp-Nb=NtBu(DMA)2 as a precursor. The niobium oxide films were formed through the ALD process, with the ALD process temperature set at 250-350°C and O3 gas used as a reactant.

[0041] The process of forming a niobium oxide film through the ALD process is as follows, and the following process was carried out as one cycle. 1) Using Ar as a carrier gas, the niobium precursor Cp-Nb=NtBu(DMA)2 was supplied to the reaction chamber at room temperature, and the niobium precursor was adsorbed onto the substrate. 2) Ar gas is supplied into the reaction chamber to remove any unadsorbed niobium precursor or by-products. 3) O3 gas is supplied to the reaction chamber to form a monolayer. 4) Ar gas is supplied into the reaction chamber to remove unreacted materials or by-products. The thickness of the niobium oxide film obtained through the above process was measured, and it was confirmed that the growth rate of the niobium oxide film obtained per cycle of the ALD process was approximately 0.6 Å / cycle at 300°C.

[0042] - Example Niobium oxide films were formed on silicon substrates using EtMeCp-Nb=NtBu(Cl)2 as a precursor. The niobium oxide films were formed through the ALD process, with the ALD process temperature at 250-350°C and O3 gas as the reactant. The niobium oxide films were formed in the same manner as in the comparative example, except that the metal precursor was changed to EtMeCp-Nb=NtBu(Cl)2.

[0043] The thickness of the niobium oxide film obtained through the above process was measured, and the growth rate of the niobium oxide film obtained per cycle of the ALD process was approximately 0.25 Å / cycle at 250-350°C. Compared to the comparative example, the film growth rate was lower and it was confirmed that the film growth rate remained constant over a wide temperature range.

[0044] <Feed time increase comparison> FIG. 4 is a graph showing essential characteristics of ALD and a graph comparing growth rates under conditions of increasing the supply amount of tantalum chloride in an embodiment of the present invention and a comparative example.

[0045] Looking at the graph on the left side of Figure 4, ideal ALD requires saturation of growth per cycle (GPC) versus feed time, which means that self-limiting deposition is possible with each cycle.

[0046] Looking at the graph on the right side of Figure 4, tantalum chloride is a compound with typical etching properties, and as the supply amount increases, the growth rate tends to gradually decrease. The comparative example, which is an organic ligand compound, shows a sustained increase as the supply amount increases (growth rate increases by 18%), while the example shows a clear saturation characteristic, where the growth rate remains constant even when the supply amount is increased (growth rate increases by 6%). This is a precursor compound that contains both halogen and organic ligand, and as a result, the growth rate remains constant due to a self-limiting reaction, which suggests that a conformal thin film can be formed even in a three-dimensional structure.

[0047] <Self-etching phenomenon> FIG. 5 is a graph showing a schematic diagram of a supply cycle in an experiment for confirming the self-etching phenomenon according to an embodiment of the invention.

[0048] An oxide film was formed on a Si substrate using EtMeCp-Nb=NtBu(Cl)2 (represented by <Chemical Formula 11> below, Metal A), a metal precursor according to the example, and EtMeCp-Ta=NtBu(Cl)2 (represented by <Chemical Formula 12> below, Metal B), a tantalum compound that has the same ligand as the metal compound according to the example and is in the same group on the periodic table. Similar to the supply cycle shown in Figure 5, Metal A and Metal B were supplied sequentially, and then a metal oxide film was formed through an ALD process that formed an oxide film. The ALD process temperature was 320°C, and O3 gas was used as the reactant. [ka] [ka]

[0049] Table 1 below shows the results of a comparative analysis of the metal content of the formed thin film using XPS (X-ray photoelectron spectroscopy).

[0050] [Table 1]

[0051] As shown in Table 1 above, when 100 cycles were performed using only EtMeCp-Nb=NtBu(Cl)2, the Nb% in the thin film was confirmed to be 24.1% (Experiment 1). When EtMeCp-Nb=NtBu(Cl)2 was supplied simultaneously and then EtMeCp-Ta=NtBu(Cl)2 was supplied, the Nb% in the thin film decreased to 19.8% and the Ta% in the thin film increased to 7.0% (Experiment 2). When the same process was performed with the tantalum compound supply time extended, the Nb% in the thin film further decreased and the Ta% in the thin film further increased (Experiment 3).

[0052] The above results can be interpreted as the niobium compound adsorbed on the surface during the precursor supply process being etched, and the supplied tantalum compound being deposited. When only the niobium compound of the present invention is used, it can be inferred that etching occurs independently during the surface adsorption process.

[0053] As explained in Figure 3, the secondary metal precursor generated by the unique etching phenomenon can be diffused downward to finally form a conformal thin film.

[0054] <Step coverage comparison> FIG. 6 shows the results of checking the step coverage when a niobium oxide film according to an embodiment of the present invention is deposited on a patterned wafer.

[0055] - Comparative Example First, the niobium oxide film according to the comparative example was deposited on a patterned wafer with an aspect ratio of 40:1 at a process temperature of 320°C to check the step coverage. As a result, the thin film obtained under the same process conditions had an upper thickness of 10.35 nm and a lower thickness of 9.12 nm, confirming a step coverage of 88% (left side of Figure 6).

[0056] - Example First, the niobium oxide film according to the embodiment was deposited on a patterned wafer with an aspect ratio of 40:1 at a process temperature of 320°C to check the step coverage. As a result, the thin film obtained under the same process conditions had an upper thickness of 9.95 nm and a lower thickness of 9.96 nm, confirming that the step coverage was 100% (right side of Figure 6).

[0057] The following Table 2 shows the results of the comparative examples and examples.

[0058] [Table 2]

[0059] Although the present invention has been described in detail above through the examples, other embodiments are possible, and the technical spirit and scope of the following claims are not limited to the examples.

Claims

1. In the thin film formation method, 1. A thin film processing method, comprising: a metal precursor supplying step of supplying a metal precursor into a chamber in which a substrate is placed, and adsorbing the metal precursor onto the substrate; a step of purging the chamber; and a thin film forming step of supplying a reactant into the chamber to react with the adsorbed metal precursor to form a thin film, wherein the metal precursor includes one or more halogen groups and one or more organic ligands.

2. 2. The thin film processing method according to claim 1, wherein the metal precursor is represented by the following Chemical Formula 1: In the <Chemical Formula 1>, n is independently selected from an integer of 1 to 2, X is selected from halogen elements; L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands bonded by N, O, P, and S elements.

3. 2. The thin film processing method according to claim 1, wherein the metal precursor is represented by the following formula 2: In the <Chemical Formula 2>, n is independently selected from an integer of 1 to 3; X is selected from halogen elements; L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands bonded by N, O, P, and S elements.

4. 2. The thin film processing method according to claim 1, wherein the metal precursor is represented by any one of the following formulas: <Chemical Formula 3> to <Chemical Formula 5>. In the <Chemical Formula 3> to <Chemical Formula 5>, R1 to R5 are each independently selected from hydrogen, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms; X is selected from halogen elements; L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands bonded by N, O, P, and S elements.

5. 2. The thin film processing method according to claim 1, wherein the metal precursor is represented by the following formula 6: In the <Chemical Formula 6>, n is independently selected from integers of 1 to 4; X is selected from halogen elements; L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands bonded by N, O, P, and S elements.

6. 2. The thin film processing method according to claim 1, wherein the metal precursor is represented by any one of the following formulas: <Chemical Formula 7> to <Chemical Formula 9>. In the <Chemical Formula 7> to <Chemical Formula 9>, R1 to R5 are each independently selected from hydrogen, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms; X is selected from halogen elements; L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands bonded by N, O, P, and S elements.

7. 2. The thin film processing method according to claim 1, wherein the metal precursor is represented by the following formula: In the formula (10), n is independently selected from integers of 1 to 4; X is selected from halogen elements; L may be the same or different and is selected from a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimido group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms; L includes bidentate organic ligands bonded by N, O, P, and S elements.

8. 2. The thin film processing method according to claim 1, wherein the thin film formation method proceeds at a temperature of 50 to 700.degree.

9. 2. The thin film processing method according to claim 1, wherein the thin film is one of a metal film, a metal oxide film, a metal nitride film, and a metal sulfide film.

10. A method for manufacturing a volatile memory element, comprising any one of the thin film processing methods according to claims 1 to 9.

11. A method for manufacturing a nonvolatile memory element, comprising any one of the thin film processing methods according to claims 1 to 9.

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