Detection sensor module and sensor module heat radiation structure

Abstract

To provide a detection sensor module capable of simplifying the structure without providing a cooling plate in a vacuum chamber of a semiconductor manufacturing apparatus.SOLUTION: A detection sensor module S100 comprises: a piezoelectric vibration part 20 in which a reaction electrode 22 to which target substance in gas is attached and a reference electrode 23 to which the target substance is not attached are provided on a sensor substrate 21 serving as piezoelectric vibrator; a cooling element for cooling the piezoelectric vibration part 20; and a support member 11 supporting the cooling element. The support member 11 includes: a center part 16 for arranging the cooling element; and a flange-shaped base part 17 having a circular ring-like shape, extending outward in a radial direction of the circular ring around the center part 16, and dissipating heat from the center part 16.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a sensing sensor module and a heat dissipation structure for the sensor module. [Background technology]

[0002] Conventionally, a QCM (Quartz Crystal Microbalance) type sensor using a quartz crystal oscillator has been known as a sensor for detecting substances contained in gas. In this sensor, target substances in gas introduced into the sensor adhere to the quartz crystal oscillator, and the type and amount of the adhered target substance are detected (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-139788 Summary of the Invention [Problem to be solved by the invention]

[0004] Conventionally, the above-described detection sensor has been configured to be placed in a vacuum chamber of a semiconductor manufacturing device for use, and this configuration requires a cooling plate to be provided in the vacuum chamber to dissipate heat from the detection sensor, which results in a complicated structure.

[0005] Therefore, the present invention has been made in consideration of the above points, and aims to provide a detection sensor module and a sensor module heat dissipation structure that do not require a cooling plate to be installed inside the vacuum chamber of a semiconductor manufacturing device, thereby simplifying the structure. [Means for solving the problem]

[0006] One form of the sensing sensor module of the present invention comprises a piezoelectric vibration part provided on a sensor substrate which has a piezoelectric vibrator as a reaction electrode to which a target substance in a gas adheres and a reference electrode to which the target substance does not adhere, a cooling element for cooling the piezoelectric vibration part, and a support member for supporting the cooling element, wherein the support member has a central part where the cooling element is disposed, and a flange-like base part having an annular shape and extending radially outward around the central part to dissipate heat from the central part.

[0007] The sensing sensor module may further include an exterior cover having an opening through which the gas passes and covering the piezoelectric vibration part and the cooling element, the base part having a first surface and a second surface opposite to the first surface, the exterior cover being arranged to protrude from the side of the first surface, the first surface being a plane extending in a direction perpendicular to the protruding direction of the exterior cover, and the second surface being an inclined surface inclined so that the distance to the first surface becomes shorter as it moves radially outward.

[0008] The central portion and the base portion may be formed from a single member.

[0009] A sensor module heat dissipation structure of one form of the present invention comprises the above-described sensing sensor module, a center ring having an O-ring on its outer periphery, an interface member having a flange portion provided in a part of a semiconductor manufacturing apparatus, and a clamp member, and the clamp member is configured to press and fix the base portion and the flange portion in a direction that brings the base portion and the flange portion closer to each other, with the O-ring interposed between the base portion of the sensing sensor module and the flange portion of the interface member.

[0010] The sensing sensor module may be arranged in a space on the vacuum chamber side of the semiconductor manufacturing apparatus with the piezoelectric vibrating portion facing the space. [Effects of the Invention]

[0011] According to the present invention, it is possible to provide a detection sensor module and a heat dissipation structure for a sensor module that can be simplified in structure without the need to provide a cooling plate inside a vacuum chamber of a semiconductor manufacturing device. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a schematic diagram of a semiconductor manufacturing system including a heat dissipation structure for a sensor module. [Figure 2] FIG. 2 is an exploded perspective view of the heat dissipation structure for a sensor module. [Figure 3] FIG. 2 is a perspective view of some components of the heat dissipation structure for a sensor module. [Figure 4] FIG. 2 is a side view of some components of the heat dissipation structure for a sensor module. [Figure 5] FIG. 2 is a perspective view of a detection sensor module. [Figure 6] FIG. 2 is a cross-sectional view schematically illustrating the configuration of a detection sensor module. [Figure 7] FIG. 2 is a partial cross-sectional perspective view of a detection sensor module. [Figure 8] FIG. 2 is a cross-sectional view of the assembled sensor module. [Figure 9] FIG. 1 is a diagram illustrating an example of a conventional configuration. DETAILED DESCRIPTION OF THE INVENTION

[0013] Fig. 1 is a schematic diagram of a semiconductor manufacturing system including a heat dissipation structure for a sensor module. Fig. 2 is an exploded perspective view of the heat dissipation structure for a sensor module. Fig. 3 is a perspective view of some components of the heat dissipation structure for a sensor module. Fig. 4 is a side view of some components of the heat dissipation structure for a sensor module.

[0014] The semiconductor manufacturing system S in FIG. 1 includes a semiconductor manufacturing device 1 and a heat dissipation structure 5 for a sensor module.

[0015] As an example, the semiconductor manufacturing apparatus 1 includes an apparatus main body 1a and an equipment connection unit 1b. The apparatus main body 1a is used in the semiconductor manufacturing process and includes a vacuum chamber. The equipment connection unit 1b is provided so as to communicate with the space inside the vacuum chamber. The semiconductor manufacturing apparatus 1 is not limited to a specific type, and various types of apparatus can be used.

[0016] In this example, the heat dissipation structure 5 for a sensor module is provided in a part of the device connection portion 1b. As shown in Fig. 2, the heat dissipation structure 5 for a sensor module specifically includes a detection sensor module S100, a centering ring 40, an interface member 60, and a clamp member 80.

[0017] As an example, the detection sensor module S100 is a QCM (Quartz Crystal Microbalance) sensor. A detailed structure of the detection sensor module S100 will be described with reference to other drawings. In the semiconductor manufacturing system S, the detection sensor module S100 is not installed inside the vacuum chamber of the semiconductor manufacturing equipment 1 but is attached externally to a part of the equipment. The detection sensor module S100 is fixed to the interface member 60 with an O-ring 42 interposed between a base portion 17 of the detection sensor module S100 and a flange portion 62 of the interface member 60, as will be described in detail later.

[0018] The center ring 40 has a seal member main body 41 and an O-ring 42. The seal member main body 41 has an overall annular shape, and the O-ring 42 is provided on its outer periphery. The O-ring 42 is a seal member and is made of an elastic material.

[0019] The interface member 60 is a component provided in a part of the semiconductor manufacturing equipment 1. The interface member 60 has a cylindrical main body 61 and a flange portion 62. As a specific example, the interface member 60 is a cylindrical component conforming to the "NW25" standard.

[0020] The cylindrical main body 61 has a cylindrical shape. The flange 62 extends radially outward from the cylindrical main body 61. The flange 62 has, for example, a circular contour.

[0021] The flange portion 62 has a first surface 62a and a second surface 62b (see FIG. 4). The first surface 62a is a flat surface extending in a direction perpendicular to the central axis of the cylindrical main body 61. The second surface 62b is an inclined surface whose distance from the first surface 62a decreases radially outward. Specifically, the second surface 62b has the shape of a truncated cone-shaped outer circumferential surface.

[0022] As shown in FIG. 2 , the clamp member 80 includes a first member 81, a second member 82, and a fastening member 83. Both the first member 81 and the second member 82 have a semicircular arc shape. The first member 81 has an inclined surface 81a and an inclined surface 81b that approach each other as they move radially outward. The second member 82 similarly has a pair of inclined surfaces that approach each other as they move radially outward. The flange portion 62, the O-ring 42, and the base portion 17 are sandwiched between these inclined surfaces. The base end of the first member 81 and the base end of the second member 82 are connected to each other. The tip end of the first member 81 and the tip end of the second member 82 are fixed by the fastening member 83.

[0023] By tightening the fastening member 83 of the clamp member 80 configured as described above, the base portion 17 and the flange portion 62 are pressed toward each other, and the flange portion 62, the O-ring 42, and the base portion 17 are fixed in place while being sealed by the O-ring 42.

[0024] (Structure of the detection sensor module S100) Fig. 5 is a perspective view of the detection sensor module. Fig. 6 is a cross-sectional view schematically showing the configuration of the detection sensor module. Note that Figs. 5 and 6 illustrate a detection sensor module S100 having a structure in which an electrode cover 50 (details below) is provided and a temperature sensor 25 (details below) is arranged on the underside of the piezoelectric vibration part 20, but the present invention is not limited to a detection sensor module having such a specific structure.

[0025] As shown in FIGS. 5 and 6, the sensing sensor module S100 includes a housing 10, a piezoelectric vibration part 20, a support substrate 30, an electrode cover 50, and a base structure 70.

[0026] The operating principle of the detection sensor module S100 is well known and will be briefly described below. In the detection sensor module S100, the piezoelectric vibrator of the piezoelectric vibration unit 20 is cooled by a Peltier element. Gas supplied from the outside and introduced into the detection sensor module S100 comes into contact with the reaction electrode 22, where it is cooled and adheres to the reaction electrode 22. The piezoelectric vibrator is then heated while acquiring the oscillation frequencies f1 and f2 of the reaction electrode 22 and the reference electrode 23, respectively. This temperature increase causes the target substance adhered to the reaction electrode 22 to desorb. This desorption significantly changes the oscillation frequency f1. Meanwhile, the oscillation frequency f2 of the reference electrode 23 barely changes. The mass and / or type of the target substance is identified based on the difference between the oscillation frequencies f1 and f2, the degree of change in the oscillation frequency f1, and the like.

[0027] (Explanation of each part) 4 and 5, the housing 10 has a support member 11 and an exterior cover 12. The support member 11 supports the piezoelectric vibration part 20, the support substrate 30, the electrode cover 50, and the like.

[0028] The exterior cover 12 is attached to the support member 11 so as to cover the piezoelectric vibration part 20, the electrode cover 50, etc. In this example, the exterior cover 12 has a cylindrical shape. An opening 12a is formed on the upper surface of the exterior cover 12. The opening 12a is a portion through which gas containing the target substance passes. The gas is not limited to a specific target, but one example is a highly corrosive halogen-based gas generated in semiconductor manufacturing equipment that performs plasma etching. As shown in FIG. 4, the exterior cover 12 is arranged so as to protrude from the side of the first surface 17a (details below) of the base part 17. The detection sensor module S100 is arranged in a space within the vacuum chamber of the semiconductor manufacturing equipment 1 with the piezoelectric vibration part 20 facing the space.

[0029] 5, the piezoelectric vibration part 20 includes a sensor substrate 21 and a temperature sensor 25. In this example, the sensor substrate 21 is formed into a generally circular outline shape. The sensor substrate 21 is a quartz crystal vibration plate that is a piezoelectric vibrator.

[0030] The sensor substrate 21 has a reaction electrode 22 and a reference electrode 23. The reaction electrode 22 and the reference electrode 23 are formed on the upper surface of the sensor substrate 21. As shown in Fig. 6, the sensor substrate 21 is attached to the support substrate 30 with the reaction electrode 22 and the reference electrode 23 facing the opening 12a.

[0031] The reactive electrode 22 is an electrode to which a target substance contained in the gas adheres. As shown in FIG. 6, the reactive electrode 22 is disposed in a position facing the opening 12a. The reference electrode 23 is formed in a position adjacent to the reactive electrode 22 on the upper surface of the sensor substrate 21. The reference electrode 23 is an electrode to which a target substance in the gas does not adhere. Both the reactive electrode 22 and the reference electrode 23 have, for example, a circular outline.

[0032] The temperature sensor 25 is a sensor for detecting the temperature of the sensor substrate 21. Based on the output value of the temperature sensor 25, the operation of a Peltier element (details below) is controlled, and the temperature of the sensor substrate 21, which is a quartz oscillator, is adjusted.

[0033] The support substrate 30 is a member that supports the piezoelectric vibration part 20. The support substrate 30 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. A cavity 31 is formed in the support substrate 30. The cavity 31 is a recess that receives the temperature sensor 25. The cavity 31 is carved in the thickness direction of the support substrate 30.

[0034] The base structure 70 includes an oscillation control circuit (not shown) and a Peltier element 72 (see FIG. 6). The oscillation control circuit is a circuit for oscillating the piezoelectric vibrator. As an example, the oscillation control circuit is arranged closer to the support member 11 than the Peltier element 72.

[0035] The Peltier element 72 is a cooling element that cools the piezoelectric vibration part 20. A support substrate 30 is provided so as to be in contact with the Peltier element 72. In this example, the Peltier element 72 is supported by a support member 11. The Peltier element 72 may be disposed so as to be in direct contact with a part of the support member 11, or may be supported by the support member 11 with another member interposed therebetween. The heat of the Peltier element 72 is configured to be transferred to the support member 11 via a central portion 16 (FIG. 6, details below).

[0036] The temperature sensor 25 is disposed on the surface opposite to the surface on which the reaction electrode 22 and the reference electrode 23 are provided. When the sensor substrate 21 is attached to the support substrate 30, the temperature sensor 25 is located inside the cavity 31. Specifically, as an example, the temperature sensor 25 and the conductive adhesive disposed in contact with it are disposed within the cavity 31. The cavity 31 is covered by the sensor substrate 21.

[0037] As shown in FIGS. 5 and 6, the electrode cover 50 is a member that covers the piezoelectric vibration part 20. The electrode cover 50 is formed in an overall disk shape. The electrode cover 50 has a through hole. The through hole is formed larger than the reaction electrode 22. In this example, the through hole is also formed larger than the opening 12a. When the electrode cover 50 is attached to the piezoelectric vibration part 20, the reaction electrode 22 is exposed through the through hole. With this configuration, even when the electrode cover 50 is attached to the piezoelectric vibration part 20, target substances in the gas adhere to the reaction electrode 22, allowing the detection sensor module S100 to detect the target substances.

[0038] (heat dissipation structure) Fig. 7 is a partial cross-sectional perspective view of the detection sensor module. Fig. 8 is a cross-sectional view of the detection sensor module in an assembled state. As shown in Fig. 7, the support member 11 of the detection sensor module S100 has a central portion 16 and a base portion 17.

[0039] The central portion 16 is a portion where a Peltier element 72, which is a cooling element, is disposed. The Peltier element 72 does not necessarily have to be disposed so as to be in direct contact with the central portion 16.

[0040] The base portion 17 has an annular shape. The base portion 17 extends radially outward from the periphery of the central portion 16. The base portion 17 is flange-shaped and has the function of dissipating heat from the central portion 16. In this example, the base portion 17 is formed integrally with the central portion 16. In other words, the base portion 17 and the central portion 16 are formed from a single member.

[0041] Base portion 17 also has a first surface 17a and a second surface 17b opposite to first surface 17a. First surface 17a is a flat surface extending in a direction perpendicular to the protruding direction of exterior cover 12. Second surface 17b is an inclined surface that is inclined so that the distance from first surface 17a decreases radially outward.

[0042] The detection sensor module S100 configured in this manner is connected to the interface member 60 in the state shown in FIG. 8 by tightening the clamp member 80 (part of which is shown schematically in FIG. 8). In FIG. 8, the interface member 60 is on the vacuum side communicating with the vacuum chamber of the semiconductor manufacturing equipment 1, and the detection sensor module S100 is on the atmosphere side. In the assembled state shown in FIG. 8, the O-ring 42 of the center ring 40 seals the gap between the first surface 17a of the base portion 17 and the first surface 62a of the flange portion 62 of the interface member 60. Because the second surfaces 17b and 62b are both inclined surfaces, the more the clamp member 80 is tightened, the more the base portion 17 and the flange portion 62 are pressed against each other, ensuring a good seal.

[0043] One end side of the annular portion of the seal member main body 41 fits into the annular recess 17c of the base portion 17, and the other end side of the annular portion fits into the annular recess 62c of the flange portion 62.

[0044] By being fixed to the interface member 60 in this manner, the detection sensor module S100 can detect the detection target in the gas from the vacuum chamber of the semiconductor manufacturing equipment 1 with good accuracy.

[0045] According to the configuration of this embodiment described above, the base portion 17 functions as an attachment portion that is clamped by the clamp member 80 and also functions as a heat dissipation portion, so that heat from the Peltier element 72 of the detection sensor module S100 can be effectively dissipated. The heat from the Peltier element 72 is also conducted to the flange portion 62, and is therefore also dissipated through the flange portion 62, resulting in effective heat dissipation from the Peltier element 72.

[0046] Fig. 9 is a diagram showing an example of a conventional configuration. Compared to the configuration in which a cooling plate P103 for cooling the detection sensor module P100 is arranged in a vacuum chamber P101 as shown in Fig. 9, the configuration of this embodiment does not require the cooling plate P103 to be arranged in the vacuum chamber P101, so the configuration can be simplified and water cooling using a cooling chiller or liquid nitrogen is not required. In addition, expensive feedthroughs and vacuum cables are also not required.

[0047] (Variation) In the configuration of the present invention, the piezoelectric vibration part 20 of the detection sensor module S100 is arranged in the vacuum side area, and the detection signal is output to the outside through the signal line drawn out to the atmosphere side area. In such a configuration, the signal line may be fixed in a state where a predetermined hole through which the signal line passes is filled with a sealant such as epoxy so that the atmosphere side area and the vacuum side area are well isolated from each other.

[0048] The present invention has been described above using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments, and various modifications and changes are possible within the scope of the gist of the present invention. For example, all or part of the device can be configured by functionally or physically distributing or integrating any unit. Furthermore, new embodiments resulting from any combination of multiple embodiments are also included in the embodiments of the present invention. The effects of the new embodiments resulting from the combination also have the effects of the original embodiments. [Explanation of symbols]

[0049] 1. Semiconductor manufacturing equipment 1a Device body 1b Device connection section 5. Sensor module heat dissipation structure 10. Cabinet 11 Support member 12 Exterior cover 16 Central part 17 Base 17a 1st page 17b Side 2 17c Annular recess 20 Piezoelectric vibration part 21 Sensor board 22 Reaction electrode 23 Reference electrode 25 Temperature Sensor 30 Support substrate 31 Cavity 40 Center Ring 41 Seal member body 42 O-ring 50 Electrode cover 60 Interface member 61 Cylindrical main body 62 Flange 62a 1st page 62b 2nd side 62c Annular recess 70 Base Structure 72 Peltier element 80 Clamping member 81 First member 81a Slope 81b Slope 82 Second member 83 Fastening members S Semiconductor manufacturing system S100 Sensor Module

Claims

1. a piezoelectric vibrating section provided on a sensor substrate, the piezoelectric vibrator being a reaction electrode to which a target substance in a gas adheres and a reference electrode to which the target substance does not adhere; a cooling element that cools the piezoelectric vibration portion; a support member for supporting the cooling element; Equipped with The support member is a central portion in which the cooling element is disposed; a flange-like base portion having an annular shape and extending radially outward from the central portion around the annular base portion to dissipate heat from the central portion; having Sensing sensor module.

2. an exterior cover having an opening through which the gas passes and covering the piezoelectric vibration part and the cooling element; the base portion has a first surface and a second surface opposite to the first surface, the exterior cover is disposed so as to protrude from the first surface side, the first surface is a plane extending in a direction perpendicular to the protruding direction of the exterior cover, the second surface is an inclined surface inclined so that the distance from the first surface becomes shorter toward the outside in the radial direction; The sensing sensor module according to claim 1 .

3. The central portion and the base portion are formed from a single member. The sensing sensor module according to claim 1 or 2.

4. The sensing sensor module according to claim 1 or 2; a center ring having an O-ring on its outer periphery; an interface member having a flange portion provided in a part of the semiconductor manufacturing equipment; A clamping member; Equipped with The clamp member is With the O-ring interposed between the base portion of the detection sensor module and the flange portion of the interface member, the base portion and the flange portion are pressed in a direction in which the base portion and the flange portion approach each other to be fixed. Sensor module heat dissipation structure.

5. The sensing sensor module includes: The piezoelectric vibrating portion is disposed in a space on the vacuum chamber side of the semiconductor manufacturing apparatus in a facing direction. The heat dissipation structure for a sensor module according to claim 4 .

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