Alkanolamines as si polishing rate enhancers for si polishing

Abstract

To provide a chemical mechanical polishing (CMP) composition for polishing silicon (Si) surfaces.SOLUTION: A CMP composition includes a first polishing rate enhancer, a second polishing rate enhancer, and a silica abrasive to provide a composition that has advantageous properties such as a high Si polishing rate while maintaining low polishing debris formation.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a chemical mechanical polishing (CMP) composition comprising a first and second polishing rate enhancer and a silica abrasive. More specifically, the first polishing rate enhancer is an alkanolamine and the second polishing rate enhancer is a basic amino acid. This combination provides advantageous properties such as high silicon polishing rates while maintaining low polishing debris formation, thus providing a composition well suited for polishing silicon surfaces. [Background technology]

[0002] As a first-generation semiconductor material, silicon occupies a major market share in the semiconductor industry. Compared with SiC, GaN, and other semiconductor materials, silicon offers superior performance in the integrated circuit (IC) industry due to its low cost, abundant stock, and mature design and manufacturing. IC manufacturing uses a commonly used global planarization technology known as chemical mechanical polishing (CMP).

[0003] CMP is a process for removing material from the surface of a substrate (such as a semiconductor wafer) and polishing (planarizing) the surface by combining physical processes, such as grinding, with chemical processes, such as oxidation or chelation. In its most basic form, CMP involves applying a slurry to the substrate surface or to a polishing pad that polishes the substrate. This process achieves both the removal of unwanted material and the planarization of the substrate surface. It is not desirable for the removal or polishing process to be purely physical or purely chemical, but rather to involve a synergistic combination of both.

[0004] CMP polishing pads are the most important consumables because they have a dominant influence on the output of the polishing process. The structure and material properties of the polishing pad determine the material removal rate and planarization capability. Additionally, the polishing pad distributes a slurry containing abrasive particles onto the wafer surface to remove material. If insoluble polishing debris (discussed below) is generated during the polishing process, it can clog the polishing pad and cause scratches on the polished surface. The formation of scratches on the wafer surface can ultimately lead to serious circuit failures, low device yields, and potential reliability issues.

[0005] In recent years, wafer design has continued to progress toward a steady reduction in wafer size and a gradual increase in wafer diameter, which also poses significant challenges to silicon wafer CMP technology. For example, as the size decreases, controlling scratch formation during CMP becomes even more important.

[0006] Therefore, there is a great need to develop a polishing composition that can increase the rate at which silicon is removed from a wafer while minimizing the formation of debris. These and other challenges can be addressed by the subject matter disclosed herein. Summary of the Invention

[0007] In accordance with the objectives of the subject matter disclosed herein, or the problem that the invention seeks to solve, as embodied and broadly described herein, it is an object of the present invention to provide compositions that facilitate improved removal of substrates, such as silicon. Another object of the present invention is to provide compositions and methods that maintain low debris formation, which is formed as a polishing by-product during CMP.

[0008] Therefore, one aspect of the subject matter disclosed in this specification relates to a polishing composition comprising a silica abrasive, a first polishing rate enhancer, and a second polishing rate enhancer, wherein the first polishing rate enhancer is an alkanolamine, the second polishing rate enhancer is a basic amino acid, and the pH of the polishing composition is in a basic range. Note that the silica abrasive refers to an abrasive containing silica, and is preferably composed of silica (particularly colloidal silica).

[0009] In another aspect, the subject matter described herein relates to a method of polishing a substrate, the method including the steps of: 1) providing a polishing composition disclosed herein; 2) providing a substrate including a silicon-containing layer; and 3) polishing the substrate with the polishing composition to provide a polished substrate. DETAILED DESCRIPTION OF THE INVENTION

[0010] The present invention may be understood more readily by reference to the following detailed description of the invention and the examples included therein.

[0011] Before the present compounds, compositions, articles, systems, devices, and / or methods are disclosed and described, it is to be understood that they are not limited to particular synthetic methods unless otherwise specified, or to particular components unless otherwise specified, as such synthetic methods or components may, of course, vary. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting. Although any methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, exemplary methods and materials are now described.

[0012] Described herein are polishing compositions comprising a silica abrasive, a first polishing rate enhancer, and a second polishing rate enhancer. These polishing compositions are intended for polishing substrates, and exhibit at least one advantage, such as: 1) a high silicon polishing rate (RR); 2) low insoluble polishing debris formation during CMP; and 3) minimal change in the turbidity of the polishing composition observed as the pH of the polishing composition decreases as a result of 2). More preferably, the polishing composition achieves low polishing rates for tungsten (W), silicon nitride (SiN), titanium nitride (TiN), silicon oxide made from tetraethoxysilane (TEOS), copper (Cu), and / or molybdenum (Mo).

[0013] High silicon polishing rates, low insoluble polishing debris formation during CMP, and minimal observed change in polishing composition turbidity as the polishing composition pH is decreased are important properties.

[0014] Compositions exhibiting these important properties can be obtained by using certain components. For example, in one embodiment, a polishing composition comprising a silica abrasive, a first polishing rate enhancer, and a second polishing rate enhancer maintains low insoluble polishing debris formation.

[0015] The polishing compositions described herein can be used to polish silicon-containing substrates.

[0016] In this specification, the "polishing composition" may be simply referred to as the "composition." The term "X to Y" refers to the numerical values ​​(X and Y) before and after the term as upper and lower limits, respectively, and means "X or more and Y or less." When multiple "X to Y" are listed, for example, when "X1 to Y1 or X2 to Y2" is listed, the disclosure of each numerical value as the upper limit, the disclosure of each numerical value as the lower limit, and the combination of the upper and lower limits are all disclosed (i.e., they constitute a legitimate basis for amendment). Specifically, amendments to X1 or more, amendments to Y2 or less, amendments to X1 or less, amendments to Y2 or more, amendments between X1 and X2, and amendments between X1 and Y2, etc., must all be deemed legitimate. The term "X or more" means more than X or X, and therefore includes the meaning of "more than X." Similarly, the term "Y or less" means less than Y or Y, and therefore includes the meaning of "less than Y." Unless otherwise specified, operations and measurements of physical properties are performed at room temperature (20-25°C) and a relative humidity of 40-50% RH. The concentrations described herein may be concentrations at the point of use (POU) or concentrations before dilution to the POU concentration. The dilution ratio may be 2-10 times. It should be understood that all combinations of embodiments and explanations disclosed herein are disclosed in this application. In other words, they should be understood as a basis for amendment. When the content or concentration of each component is described, if two or more components are included, it may be the total amount. A.Definition Listed below are definitions of various terms used to describe this invention. These definitions apply to the terms as they are used throughout this specification, unless otherwise limited in specific instances, either individually or as part of a larger group.

[0017] As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural unless the context clearly dictates otherwise. Thus, for example, reference to an "abrasive" or a "pH adjuster" includes a mixture of two or more such abrasives or pH adjusters.

[0018] Ranges can be expressed herein as from "about" one particular value and / or to "about" another particular value. When such a range is expressed, another embodiment includes from the one particular value and / or to the other particular value. Similarly, when values ​​are expressed as approximations, by use of the antecedent "about," it is understood that the particular value forms another embodiment. It is further understood that the endpoints of each range are significant both in relation to the other endpoint, and independently of the other endpoint. It is also understood that there are a number of values ​​disclosed herein, and that each value is herein disclosed as "about" that particular value in addition to the value itself. For example, if the value "10" is disclosed, then "about 10" is also disclosed. It is also understood that each unit between two particular units is disclosed. For example, if 10 and 15 are disclosed, then 11, 12, 13, and 14 are also disclosed. In this specification, "about X" (X is a numerical value) can mean that it further includes ±10% or ±5% of X. For example, ±10% means X × 0.9 to X × 1.1. Furthermore, "about X" may be X itself.

[0019] References in the specification and concluding claims to parts by weight of a particular element or component in a composition indicate the weight relationship between that element or component and any other element or component in the composition or article for which the parts by weight are expressed. Thus, in a compound containing 2 parts by weight of component "X" and 5 parts by weight of component "Y," "X and Y" are present in a 2:5 weight ratio, regardless of whether other components are included in the composition.

[0020] Weight percent (wt %) of a component is based on the total weight of the vehicle or composition in which the component is contained, unless otherwise specified.

[0021] As used herein, the terms "optional" and "optionally" mean that the subsequently described event or circumstance may or may not occur, and the description includes cases where the event or circumstance occurs and cases where it does not occur. B. Polishing composition The basic mechanism of CMP is to soften the surface layer through a chemical reaction, and then remove the softened layer through mechanical force using abrasive particles. However, the role of CMP is not limited to material removal; it also includes planarization, surface smoothing, uniformity control, defect reduction, and more. Therefore, the improvement of semiconductor yield is influenced by CMP processing.

[0022] The polishing composition disclosed herein provides a high silicon removal rate. Additionally, the disclosed polishing composition maintains low formation of insoluble polishing debris while exhibiting a high silicon removal rate. The polishing composition disclosed herein can have its pH adjusted to a basic range (e.g., about 9.0 to about 11.0). To adjust the pH of the polishing composition to a basic range, the polishing composition may contain an alkaline component. Without being bound by any theory, even if the pH of the polishing composition is adjusted to a basic range (e.g., about 9.0 to about 11.0), microscopic regions of acidity may momentarily appear in parts of the polishing composition. The location of these microscopic regions may constantly change due to the molecular motion of the components contained in the polishing composition. In the acidic range, the silica abrasive and / or the silicon-containing layer being polished may dissolve as monosilicic acid. The reaction product of the monosilicic acid with the alkaline component is usually water-insoluble, and therefore forms insoluble polishing debris as aggregates. These agglomerates may cause clogging of the polishing pad and ultimately reduce the quality of the polished surface. Once formed, the agglomerates can only be dissolved with a strong alkaline substance, so it is better to design the polishing composition so that this does not occur.

[0023] The disclosed alkanolamine as an alkaline component does not promote and / or accelerate the formation of agglomerates, which was surprising and unexpected. Presumably, this does not occur with the specific alkanolamine disclosed herein because the reaction product with monosilicic acid is water-soluble. Therefore, the disclosed alkanolamine not only provides a high silicon polishing rate, but also significantly reduces the amount of polishing debris formed in the disclosed polishing composition. To verify that the formation of agglomerates is not promoted and / or accelerated, this phenomenon was simulated in the examples described below. More specifically, the turbidity of a composition with an acidic pH was compared with the turbidity of a composition with the original pH (basic pH).

[0024] The amount of insoluble abrasive debris present in a polishing composition can be determined as a function of turbidity; that is, the greater the amount of insoluble abrasive debris, the greater the turbidity detected in the polishing composition. It has been observed that turbidity usually increases as the pH of the polishing composition changes, particularly as the pH of the polishing composition decreases. It has been shown that a decrease in the pH of the polishing composition promotes / accelerates the formation of aggregates, especially in the presence of a polishing rate enhancer containing a primary amine group. This formation of aggregates leads to an increase in turbidity. Therefore, the change in turbidity with a decrease in the pH of the polishing composition is associated with the formation of insoluble abrasive debris. Therefore, a polishing composition that shows minimal change in turbidity over a specific pH range, in which the formation of insoluble abrasive debris is minimized, would be highly desirable.

[0025] The polishing composition disclosed herein is buffered to maintain a high pH while achieving a high polishing rate without generating polishing debris during CMP.In addition, the polishing composition disclosed herein exhibits minimal turbidity change over a wide pH range when evaluated by the "Fujimi Turbidity Protocol", which will be described in more detail below. 1. Abrasives The polishing composition described herein contains an abrasive. The abrasive is typically a metal oxide abrasive, preferably selected from the group consisting of silica, alumina, titania, zirconia, germania, ceria, and mixtures thereof. In some embodiments, the abrasive is silica. In some embodiments, the abrasive is not surface-modified.

[0026] In some embodiments, the abrasive is either a commercially available product or a synthetic product. Examples of methods for producing colloidal silica include the sodium silicate method and the sol-gel method, and colloidal silica produced by either method can be preferably used as the abrasive of the present invention. However, from the viewpoint of reducing metal impurities, colloidal silica produced by the sol-gel method, which can produce colloidal silica with high purity, is more preferred.

[0027] The abrasive can have any suitable particle size. For example, the abrasive grains of the abrasive can have an average secondary particle size of about 5 nm to about 150 nm, about 5 nm to about 120 nm, about 5 nm to about 100 nm, about 10 nm to about 90 nm, about 20 nm to about 80 nm, about 25 nm to about 70 nm, about 25 nm to about 60 nm, about 25 nm to about 50 nm, about 25 nm to about 40 nm, or about 30 nm to about 40 nm. For example, the abrasive grains of the abrasive can have an average secondary particle size of about 50 nm to about 90 nm, about 60 nm to about 80 nm, or about 65 nm to about 75 nm. In some embodiments, the abrasive grains of the abrasive can have an average secondary particle size of 70 nm. The average secondary particle size can be measured using any suitable method known in the art (e.g., by light scattering, such as using a Zetasizer Nano ZS manufactured by Malvern Panalytical).

[0028] The abrasive can have any suitable surface area. For example, the abrasive can have a surface area of ​​about 50 m 2 / g or more, about 60m 2 / g or more, about 70m 2 / g or more, about 80m 2 Alternatively, or in addition, the abrasive may have an average BET surface area of ​​about 130 m / g or greater. 2 / g or less, approximately 120m 2 / g or less, approximately 110m 2 / g or less, about 100m 2 / g or less, approximately 90m 2 In some embodiments, the abrasive may have an average surface area of ​​about 10 m / g or less. 2 / g~about 150m 2 / g, approx. 20m 2 / g ~ approx. 140m 2 / g, approx. 30m 2 / g ~ approx. 130m 2 / g, approx. 40m 2 / g ~ approx. 120m 2 / g, approx. 50m 2 / g ~ approx. 110m 2 / g, approx. 60m 2 / g~about 100m 2 / g, approx. 65m 2 / g ~ approx. 95m2 / g, approx. 70m 2 / g~about 90m 2 / g, or approximately 75m 2 / g~about 85m 2 The surface area can be in the range of 1 / g.

[0029] The silanol group density on the silica surface of the abrasive can vary. In some embodiments, the average silanol group density on the silica surface of the abrasive grains contained in the polishing composition of the present invention is 10.0 nm -2 The average silanol group density is 10.0 nm or less. -2 If the hardness exceeds 100%, the hardness of the abrasive grains decreases, and the polishing rate decreases accordingly.

[0030] The average silanol group density on the surface of the abrasive grain is preferably 9.0 nm -2 Less than or equal to 8.0 nm, preferably -2 Less than 7.0 nm, more preferably -2 The average silanol group density on the abrasive grain surface is 1.0 nm or less. -2 Above, 2.0nm -2 Above, 3.0nm -2 Above, 4.0nm -2 Above, 5.0nm -2 That's all.

[0031] In some embodiments, the average silanol group density on the surface of the abrasive grain is about 1.0 nm -2 ~about 10.0nm -2 , about 2.0nm -2 ~about 9.0nm -2 , about 3.0nm -2 ~about 8.0nm -2 , about 4.0nm -2 ~about 7.5nm -2 , about 5.0nm -2 ~about 7.0nm -2 is.

[0032] The lower limit of the average silanol group density is generally zero.

[0033] The number of silanol groups per unit surface area of ​​the abrasive grain can be calculated by the Sears method using neutralization titration, as described in "Determination of Specific Surface Area of ​​Colloidal Silica by Titration with Sodium Hydroxide," Analytical Chemistry, 1956, 28(12), pp. 1982-1983, by G.W. Sears. The number of silanol groups is calculated using the following formula:

[0034] ρ = (c × a × NA) / (C × S) ρ: Number of silanol groups [number / nm 2 ] c: Concentration of the sodium hydroxide solution used in the titration [mol / L] a: Amount of sodium hydroxide solution (pH 4-9) added dropwise [ml] NA: Avogadro's number (6.022 x 10 23 [pieces / mol]) C: Mass of silica [g] S:BET specific surface area [nm 2 / g] The number of silanol groups per unit surface area of ​​the abrasive grains can be controlled by selecting the manufacturing method of the abrasive grains.

[0035] Furthermore, the abrasive grains may be surface-modified as long as their average silanol group density is within the above range. Colloidal silica with an organic acid immobilized thereon is particularly preferred. The immobilization of an organic acid on the surface of colloidal silica contained in the polishing composition can be achieved, for example, by chemically bonding the functional group of the organic acid to the colloidal silica surface. Simply allowing colloidal silica and an organic acid to coexist will not immobilize the organic acid on the colloidal silica. To immobilize sulfonic acid, one such organic acid, on colloidal silica, for example, the method described in "Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups," Chem. Commun. 246-247 (2003) can be used. More specifically, colloidal silica with a sulfonic acid immobilized on its surface can be obtained by bonding a silane coupling agent having a thiol group, such as 3-mercaptopropyltrimethoxysilane, to colloidal silica and then oxidizing the thiol group with hydrogen peroxide. Alternatively, when immobilizing a carboxylic acid on colloidal silica, for example, the method described in "Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel," Chemistry Letters, 3, 228-229 (2000) can be used. More specifically, a silane coupling agent containing a photolabile 2-nitrobenzyl ester is bonded to colloidal silica, and then the colloidal silica is irradiated with light, thereby obtaining colloidal silica having a carboxylic acid immobilized on its surface.

[0036] The abrasive grains used in the present examples and comparative examples were not surface-modified.

[0037] The amount of abrasive present in the disclosed polishing composition can vary.In some embodiments, the amount of abrasive in the polishing composition is about 0.01 wt% or more, about 0.05 wt% or more, about 0.1 wt% or more, about 0.15 wt% or more, about 0.2 wt% or more, about 0.25 wt% or more, about 0.3 wt% or more, about 0.35 wt% or more, or about 0.4 wt% or more.Alternatively, or in addition, the amount of abrasive in the polishing composition can be about 1 wt% or less, about 0.75 wt% or less, about 0.5 wt% or less, about 0.45 wt% or less, about 0.40 wt% or less, about 0.35 wt% or less, about 0.30 wt% or less, about 0.25 wt% or less, about 0.2 wt% or less, about 0.15 wt% or less, or about 0.1 wt% or less. In some embodiments, the amount of abrasive in the polishing composition can range from about 0.01% to about 1% by weight, from about 0.05% to about 0.75% by weight, from about 0.1% to about 0.5% by weight, from about 0.15% to about 0.45% by weight, from about 0.2% to about 0.4% by weight, or from about 0.25% to about 0.35% by weight. In some embodiments, the amount of abrasive in the polishing composition can be about 10% by weight or less, or 5% by weight or less.

[0038] The abrasive may be of any reasonable size, but the size of the abrasive will affect the smoothness of the resulting finish. Precision polishing materials, such as optical components, plastics, metals, gemstones, and semiconductor components, usually requires the use of smaller sized abrasives. For example, compositions for precision polishing applications require suspensions of abrasives with smaller average particle sizes.

[0039] In one embodiment, the abrasive comprises silica. In one embodiment, the abrasive comprises substantially silica. In one embodiment, the abrasive comprises colloidal silica. In some embodiments, the abrasive comprises substantially colloidal silica. As used herein, "substantially" means that 95% by weight or more, preferably 98% by weight or more, and more preferably 99% by weight or more of the particles making up the abrasive are silica (especially colloidal silica), which means that 100% by weight of the particles are silica (especially colloidal silica).

[0040] The abrasive is suspended in the compositions disclosed herein and is colloidally stable. The term colloid refers to the suspension of abrasive particles in a liquid carrier. Colloidal stability refers to the maintenance of the suspension over time.

[0041] In the context of the present invention, an abrasive suspension is considered colloidally stable when the composition is stored in a 500 mL cylindrical bottle and maintained without stirring at room temperature ("RT" means approximately 25°C) for 2 hours. The average secondary particle size is then measured at room temperature. The composition is then kept stored at 55°C for an additional 36 days before reaching room temperature. Another average secondary particle size measurement is performed at room temperature, and a stability index is calculated based on the following formula:

[0042] Index = [average secondary particle size (after storage at 55°C for 36 days) - average secondary particle size (at RT on day 0)] / average secondary particle size (at RT on day 0) The criterion is that to be desirable, the index must be less than or equal to 0.3, preferably less than or equal to 0.1. 2. First polishing speed enhancer In one aspect, the polishing composition may include a first polishing rate enhancer for increasing the Si polishing rate when polishing a silicon-containing surface. In some embodiments, the first polishing rate enhancer is an alkanolamine. In some embodiments, the alkanolamine does not have a primary amine group. In some embodiments, the alkanolamine contains one or two nitrogen atoms. In some embodiments, the alkanolamine contains one or less nitrogen atoms. In some embodiments, the alkanolamine contains two nitrogen atoms. In some embodiments, the alkanolamine does not contain two or more nitrogen atoms. Without being bound by any theory, it is believed that the disclosed alkanolamine is an alkaline component that is less likely to generate insoluble polishing debris.

[0043] In some embodiments, the alkanolamine contains at least one oxygen atom. In some embodiments, the alkanolamine contains one or two oxygen atoms. In some embodiments, the alkanolamine contains one oxygen atom. In some embodiments, the alkanolamine contains two oxygen atoms. In some embodiments, the alkanolamine contains one nitrogen atom and one oxygen atom. In some embodiments, the alkanolamine contains one nitrogen atom and two oxygen atoms. In some embodiments, the alkanolamine contains two nitrogen atoms and one oxygen atom.

[0044] In some embodiments, the alkanolamine is N(R 1 )(R 2 )(R 3 ) and R 1 ~R 3 are each independently selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group, with the proviso that R 1 ~R 3 At least one of R is an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group. 1 ~R 3 are each independently an alkyl group having 1 to 4 carbon atoms, an alkyl group having 1 to 3 carbon atoms, or an alkyl group having 1 or 2 carbon atoms. 1 ~R 3are each independently an alkyl group of 1 to 4 carbon atoms substituted with a hydroxy group, an alkyl group of 1 to 3 carbon atoms substituted with a hydroxy group, or an alkyl group of 1 or 2 carbon atoms substituted with a hydroxy group. In some embodiments, the number of hydroxy groups in the alkyl group of 1 to 4 carbon atoms substituted with a hydroxy group may be 1 to 3, 1 or 2. In some embodiments, the number of hydroxy groups in the alkyl group of 1 to 3 carbon atoms substituted with a hydroxy group may be 1 to 3, 1 or 2. In some embodiments, the number of hydroxy groups in the alkyl group of 1 or 2 carbon atoms substituted with a hydroxy group may be 1 to 3, 1 or 2.

[0045] In some embodiments, N(R 1 )(R 2 )(R 3 ) in R 1 is an alkyl group having 1 to 4 carbon atoms substituted with one hydroxy group, and R 2 is a hydrogen atom, and R 3 is an alkyl group having 1 to 4 carbon atoms.

[0046] In some embodiments, N(R 1 )(R 2 )(R 3 ) in R 1 is an alkyl group having 1 to 4 carbon atoms substituted with one hydroxy group, and R 2 is an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group, and R 3 is an alkyl group having 1 to 4 carbon atoms.

[0047] In some embodiments, N(R 1 )(R 2 )(R 3 ) in R 1 is an alkyl group having 1 to 4 carbon atoms substituted with one hydroxy group, and R 2 is an alkyl group having 1 to 4 carbon atoms, and R 3 is an alkyl group having 1 to 4 carbon atoms.

[0048] In some embodiments, the alkanolamine is acyclic. In such embodiments, the nitrogen atom is a primary, secondary, or tertiary amine. In such embodiments, the oxygen atom is contained in a hydroxy group (-OH). In some embodiments, the alkanolamine contains at least one secondary amine and one hydroxy group. In some embodiments, the alkanolamine contains a tertiary amine and at least one hydroxy group. In some embodiments, the alkanolamine contains one or less nitrogen atom.

[0049] In some embodiments, the alkanolamine is cyclic. In some embodiments, the alkanolamine contains an alkyl heterocycle, and the alkyl heterocycle contains at least one nitrogen atom and / or oxygen atom.

[0050] In some embodiments, the alkanolamine contains less than about 12 atoms, less than about 11 atoms, less than about 10 atoms, less than about 9 atoms, less than about 8 atoms, less than about 7 atoms, less than about 6 atoms, or less than about 5 atoms, excluding hydrogen atoms.

[0051] In some embodiments, the alkanolamine is selected from the group consisting of monomethylethanolamine (MMEA), methyldiethanolamine (MDEA), dimethylethanolamine (DMEA), and combinations thereof. In some embodiments, the alkanolamine is MMEA or MDEA. In some embodiments, the alkanolamine is MMEA.

[0052] In some embodiments, the amount of the first polishing rate enhancer (i.e., alkanolamine) affects the properties of the polishing composition, such as the Si RR and / or turbidity of the polishing composition. As discussed herein, the first polishing rate enhancer minimizes debris formation during Si surface polishing. The amount of the first polishing rate enhancer can be in the range of about 0.01% to about 1%, about 0.01% to about 0.5%, about 0.05% to about 0.5%, about 0.05% to about 0.25%, about 0.10% to about 0.25%, about 0.10% to about 0.20%, or about 0.12% to about 0.18%. In some embodiments, the amount of the first polishing rate enhancer can be in the range of about 0.1% to about 0.3%, about 0.1% to about 0.25%, about 0.1% to about 0.2%, or about 0.1% to about 0.15%. In some embodiments, the first polishing rate enhancer is present in an amount of about 0.01% or more, about 0.03% or more, about 0.05% or more, about 0.07% or more, about 0.09% or more, about 0.1% or more, about 0.11% or more, about 0.12% or more, about 0.14% or more, or about 0.15% or more. Alternatively, or in addition, the amount of the first polishing rate enhancer is about 0.25% or less, about 0.23% or less, about 0.21% or less, about 0.19% or less, about 0.18% or less, about 0.17% or less, or about 0.16% or less. In some embodiments, the amount of the first polishing rate enhancer (i.e., alkanolamine) can be about 0.001% or more, or alternatively, about 0.005% or more. In some embodiments, the amount of the first polishing rate enhancer (i.e., alkanolamine) can be about 3% or less, about 2% by weight or less, or about 1.5% or less. In some embodiments, the amount of the first polishing rate enhancer (i.e., alkanolamine) can be greater than 0.15%. All "%" units relating to the amount of the first polishing rate enhancer are "% by weight" and are the ratio to the total weight of the polishing composition. 3. Second polishing speed enhancer The polishing composition described herein contains a second polishing rate enhancer. In some embodiments, the second polishing rate enhancer is selected from a basic amino acid and a neutral amino acid. In some embodiments, the second polishing rate enhancer is a basic amino acid. In some embodiments, the second polishing rate enhancer is a neutral amino acid.

[0053] In some embodiments, the basic amino acid is a natural amino acid, i.e., an L-amino acid. In some embodiments, the basic amino acid is selected from arginine, lysine, and histidine. In some embodiments, the basic amino acid is arginine. In some embodiments, the basic amino acid is a non-natural amino acid, i.e., a D-amino acid. In some embodiments, the basic amino acid is a non-protein amino acid, i.e., ornithine. In certain embodiments, the basic amino acid is L-arginine.

[0054] In some embodiments, the second polishing rate enhancer further comprises a neutral amino acid selected from tryptophan and cysteine.

[0055] In some embodiments, the second polishing rate enhancer is selected from L-arginine, L-lysine, L-histidine, L-ornithine, L-tryptophan, and L-cysteine.

[0056] The amount of the second polishing rate enhancer present in the polishing composition can vary. In some embodiments, the amount of the second polishing rate enhancer present in the polishing composition is in the range of about 0.1 wt % to about 1.5 wt %, about 0.1 wt % to about 1.25 wt %, about 0.1 wt % to about 1.0 wt %, about 0.25 wt % to about 0.75 wt %, about 0.30 wt % to about 0.70 wt %, about 0.35 wt % to about 0.65 wt %, about 0.40 wt % to about 0.60 wt %, or about 0.45 wt % to about 0.55 wt %. In some embodiments, the amount of the second polishing rate enhancer present in the polishing composition can be about 0.01 wt % or more, or about 0.05 wt % or more. In some embodiments, the amount of the second polishing rate enhancer present in the polishing composition can be about 5% by weight or less, about 4% by weight or less, about 3% by weight or less, or about 2% by weight or less.

[0057] In some embodiments, the second polishing rate enhancer present in the polishing composition is present in an amount of about 0.1 wt.% or more, about 0.2 wt.% or more, about 0.3 wt.% or more, about 0.4 wt.% or more, or about 0.5 wt.% or more. Alternatively, or in addition, the amount of the second polishing rate enhancer present in the polishing composition can be about 1.0 wt.% or less, about 0.9 wt.% or less, about 0.8 wt.% or less, about 0.7 wt.% or less, about 0.6 wt.% or less, or about 0.5 wt.% or less. In some embodiments, the amount of the second polishing rate enhancer present in the polishing composition is present in an amount of about 0.50 wt.%. 4. pH adjuster The polishing composition described herein can also contain a pH adjuster.The pH adjuster is not particularly limited.However, the pH of the polishing composition directly affects the effectiveness of the polishing composition.In some embodiments, alkanolamines and basic amino acids are not included in the category of pH adjusters.

[0058] In some embodiments, pH adjuster is an acidic compound.As long as the strength of acid is sufficient to reduce the pH of the polishing composition of the present invention, the selection of acid is not particularly limited.The acidic pH adjuster can be inorganic acid or organic acid.

[0059] For example, but without limitation, such inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid.

[0060] For example, organic acids include, but are not limited to, formic acid, acetic acid, chloroacetic acid, propionic acid, butanoic acid, valeric acid, 2-methylbutyric acid, N-hexanoic acid, 3,3-dimethylbutanoic acid, 2-ethylbutanoic acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citrate, citric acid, lactic acid, diglycolic acid, 2-furancarboxylic acid, 3-furancarboxylic acid, 2-tetrahydrofurancarboxylic acid, methoxyacetic acid, methoxyphenylacetic acid, and phenoxyacetic acid. Organic acids also include, but are not limited to, organic sulfonic acids such as methanesulfonic acid, ethanesulfonic acid, and isethionic acid. In some embodiments, the pH adjuster is citric acid.

[0061] In another embodiment, the pH adjuster may be a mixture of an acidic agent and a basic agent (such as a buffering agent). In such an embodiment, the base is not particularly limited and can be appropriately selected from inorganic basic compounds such as alkali metal hydroxides, alkaline earth metal hydroxides, various carbonates, bicarbonates, etc. Such basic compounds may be used alone or in combination of two or more.

[0062] Specific examples of alkali metal hydroxides include potassium hydroxide, sodium hydroxide, ammonium hydroxide, etc. Specific examples of carbonates and bicarbonates include ammonium bicarbonate, ammonium carbonate, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate, etc.

[0063] In alternative embodiments, the pH adjusting agent may be a buffer containing phosphate, acetate, borate, sulfonate, carboxylate, nitrate, etc. For example, in some embodiments, ammonium salts may be used as buffers. Such ammonium salts include, but are not limited to, ammonium sulfate, ammonium acetate, and / or ammonium nitrate.

[0064] In some embodiments, the pH of the polishing composition is in the basic range. Specifically, it can be greater than 7.0, 8.0 or greater, or 8.5 or greater. In some embodiments, the pH of the polishing composition can be 14.0 or less, 13.0 or less, 12.0 or less, or 11.5 or less.

[0065] In some embodiments, the pH of the polishing composition is adjusted to a range of about 9.0 to about 11.0, about 9.2 to about 11.0, about 9.4 to about 11.0, about 9.6 to about 11.0, about 9.8 to about 11.0, about 10.0 to about 11.0, about 10.2 to about 11.0, about 10.4 to about 11.0, about 10.6 to about 11.0, or about 10.8 to about 11.0. In some embodiments, the pH is less than about 11.0, less than about 10.8, less than about 10.6.0, less than about 10.4, less than about 10.2, less than about 10.0, less than about 9.8, or less than about 9.6. Alternatively, or in addition, the pH is greater than about 9.5, greater than about 9.7, greater than about 9.8, greater than about 10.0, greater than about 10.2, or greater than about 10.4. In some embodiments, the pH is about 9.5 to about 10.5, or about 9.8 to about 10.2. In some embodiments, the pH is about 10.0. Herein, the pH of the polishing composition can be measured using any suitable device known in the art (e.g., using a ThermoFisher Scientific ORION™ VERSA STAR PRO™ pH / ISE / conductivity / dissolved oxygen multiparameter benchtop meter).

[0066] The pH adjuster may be present in a specific concentration range, regardless of pH. For example, in some embodiments, the amount of pH adjuster is in the range of about 0.0001% to about 0.1% by weight, about 0.003% to about 0.1%, about 0.005% to about 0.1% by weight, about 0.007% to about 0.1% by weight, or about 0.01% to about 0.1% by weight. In some embodiments, the amount of pH adjuster is in the range of about 0.01% to about 1.0% by weight, about 0.01% to about 0.7% by weight, about 0.01% to about 0.5% by weight, or about 0.01% to about 0.1% by weight. In some embodiments, the pH adjuster is present in an amount of at least about 0.0001%, at least about 0.001%, at least about 0.003%, at least about 0.005%, at least about 0.007%, or at least about 0.01% by weight. In some embodiments, the pH adjuster is present in an amount of less than about 1%, less than about 0.5%, less than about 0.1%, or less than about 0.05% by weight. In some embodiments, the amount of pH adjuster is in the range of about 0.01% to about 0.1% by weight.

[0067] In some embodiments, the amount of pH adjuster contained in the polishing composition can be an amount appropriate for adjusting the pH of the polishing composition to a desired value. 5.Water In one embodiment, the polishing composition disclosed herein contains a carrier, medium, or vehicle. In one embodiment, the carrier, medium, or vehicle is water. Ion-exchanged water (deionized water), pure water, ultrapure water, distilled water, etc. can be used as the water. To reduce the number of unwanted components present in the water, the purity of the water may be increased by operations such as removing impurity ions with an ion exchange resin, removing contaminants with a filter, and / or distillation. In one embodiment, the polishing composition disclosed herein contains an aqueous carrier. The aqueous carrier has the function of dissolving or dispersing the components contained in the polishing composition. In one embodiment, the aqueous carrier contains water. In one embodiment, the aqueous carrier consists of water at least 80 wt %, at least 85 wt %, at least 90 wt %, at least 95 wt %, or at least 99 wt %.

[0068] In some embodiments, the water is relatively free of impurities. In some embodiments, the electrical conductivity of the water is from about 0.05 mS / m to about 1 mS / m. In some embodiments, the total organic carbon (TOC) of the water is less than 50 ppb. 6. Additional Ingredients In one embodiment, the polishing composition disclosed herein may contain additional components such as a polymer, a chelating agent, a biocide, a surfactant, or a cosolvent. When the substrate to be polished is hydrophobic, the polishing composition may contain a polymer, which is expected to improve the wettability of the substrate surface. Additionally or alternatively, the composition disclosed herein may contain other additives, as would be understood by one skilled in the art. In one embodiment, the polymer is a water-soluble polymer. As used herein, "water-soluble" means that the solubility in water (25°C) is 1 g / 100 mL or greater, and "polymer" refers to a (co)polymer having at least one of a weight-average molecular weight (Mw) and a number-average molecular weight (Mn) of 200 or greater. In one embodiment, the number-average molecular weight of the polymer is 10,000 to 2,000,000, 50,000 to 1,000,000, 100,000 to 500,000, or 300,000 to 400,000. The number-average molecular weight can be measured by gel permeation chromatography (GPC) using a GPC device manufactured by Shimadzu Corporation, or can be measured using a weight-average molecular weight (equivalent to polyethylene glycol).

[0069] In one embodiment, the additional component can be any material containing one or more α-glycosidic bonds. In some embodiments, such a material includes a polysaccharide. In some embodiments, the polysaccharide is water-soluble. Exemplary water-soluble polysaccharides include, but are not limited to, pullulan, starch, amylose, amylopectin, gum arabic (gum ghatti), locust bean gum (galactomannan), konjac glucomannan, and cereal β-glucans. In some embodiments, the polysaccharide is pullulan. The amount of polysaccharide present in the polishing composition can vary. In some embodiments, the polysaccharide is present in the polishing composition in an amount of 0.001% to about 0.015% by weight, about 0.001% to about 0.01% by weight, about 0.002% to about 0.008% by weight, about 0.004% to about 0.008% by weight, or about 0.005% to about 0.007% by weight. In some embodiments, the amount of polysaccharide present in the polishing composition is 0.006 wt. %.

[0070] In one embodiment, the additional component may include a chelating agent. The chelating agent is expected to chelate metal ions that may be generated during polishing, thereby preventing them from remaining on the polished surface of the substrate (e.g., bare silicon) being polished. The metal ions may be derived from, for example, the pad, pad conditioner, or polishing device. Non-limiting examples of chelating agents include inorganic acids, organic acids, amines, and amino acids such as glycine and alanine, citric acid, acetic acid, maleic acid, oxalic acid, malonic acid, phthalic acid, succinic acid, nitrilotriacetic acid, iminodiacetic acid, ethylenediamine, DTPA (Diethylenetriaminepentaacetic acid), CDTA (Cyclohexanediaminetetraacetic acid), EDTA (Ethylenediaminetetraacetic acid), TTHA (Triethylene tetramine hexaacetic acid), HEDP (1-Hydroxy ethylidene-1,1-diphosphonic acid), NTMP (Nitrilo trimethyl phosphonic acid), and PBTC (2-Phosphonobutane-1,2,4-tricarboxylic acid). acid; 2-phosphonobutane-1,2,4-tricarboxylic acid), and EDTMP (Ethylene diamine tetramethylene phosphonic acid; ethylenediamine tetramethylphosphonic acid).

[0071] In one embodiment, examples of chelating agents that can be used in the present invention include aminocarboxylic acid chelating agents, phosphonate chelating agents, etc. Examples of chelating agents that can be used in the present invention include compounds represented by the following formula or salts thereof:

[0072] [ka]

[0073] In the formula, Y 1 and Y 2 each independently represents a linear or branched alkylene group having 1 to 5 carbon atoms, n is an integer of 0 to 4, and R 1 ~R 5 are each independently a phosphonic acid group, a carboxyl group, an alkyl group substituted with a phosphonic acid group, or an alkyl group substituted with a carboxyl group. Preferred salts include acetates and phosphonic acids.

[0074] In one embodiment, the additional component can be a biocide. Non-limiting examples of biocides include hydrogen peroxide, quaternary ammonium compounds, and chlorine compounds. More specific examples of quaternary ammonium compounds include, but are not limited to, methylisothiazolinone, tetramethylammonium chloride, tetraethylammonium chloride, tetrapropylammonium chloride, alkylbenzyldimethylammonium chlorides and alkylbenzyldimethylammonium hydroxides, each having an alkyl chain of 1 to about 20 carbon atoms. More specific examples of chlorine compounds include, but are not limited to, sodium chlorite and sodium hypochlorite. Additional examples of biocides include biguanides, aldehydes, ethylene oxide, isothiazolinones, iodophors, DuPont's Kordek™ MLX (an aqueous composition of 2-methyl-4-isothiazolin-3-one), the KATHON™ and NEOLENE™ product lines available from Dow Chemicals, and Lanxess' Preventol™ line. In one embodiment, the biocide is Kordek™ MLX. The amount of biocide used in the polishing composition can vary from about 0.00005 wt. % to 0.01 wt. % or from about 0.0001 wt. % to 0.005 wt. %. In some embodiments, the biocide is present in an amount of about 0.0005 wt. %, about 0.001 wt. %, or about 0.005 wt. %.

[0075] In another embodiment, the additional component may include a surfactant. The surfactant may be anionic, cationic, nonionic, or zwitterionic and may increase the lubricity of the vehicle or composition. Non-limiting examples of surfactants include sodium or potassium dodecyl sulfate, lauryl sulfate, secondary alkane sulfonate, alcohol ethoxylate, acetylenic diol surfactant, quaternary ammonium-based surfactant, amphoteric surfactant such as betaine, amino acid derivative-based surfactant, and any combination thereof. Examples of suitable commercially available surfactants include the TRITON™, TERGITOL™, and DOWFAX™ families of surfactants manufactured by Dow Chemicals. Suitable surfactants among surfactants may also include polymers containing ethylene oxide (EO) and propylene oxide (PO) groups. An example of an EO-PO polymer is TETRONIC™ 90R4 from BASF Chemicals. The amount of surfactant used in the polishing composition can vary from about 0.0005 to 0.15% by weight, preferably 0.001 to 0.05% by weight, and more preferably 0.0025 to 0.025% by weight.

[0076] In another embodiment, the additional component may include another solvent, referred to as a cosolvent. Non-limiting examples of cosolvents include, but are not limited to, alcohols (such as methanol or ethanol), ethyl acetate, tetrahydrofuran, alkanes, tetrahydrofuran, dimethylformamide, toluene, ketones (such as acetone), aldehydes, and esters. Other non-limiting examples of cosolvents include dimethylformamide, dimethyl sulfoxide, pyridine, acetonitrile, glycols, and mixtures thereof. Cosolvents can be used in various amounts, preferably from a lower limit of about 0.0001, 0.001, 0.01, 0.1, 0.5, 1, 5, or 10% (by weight) to an upper limit of about 0.001, 0.01, 0.1, 1, 5, 10, 15, 20, 25, or 35% (by weight).

[0077] As described herein, polishing compositions have specific properties that are greatly influenced by both the type and amount of components in the composition. Therefore, it may be necessary to exclude certain materials from the composition to maintain the desired properties.

[0078] The polishing slurry of the present invention can be prepared by any suitable technique, many of which are known to those skilled in the art. The polishing composition can be prepared by batch or continuous process. Generally, the polishing composition can be prepared by combining the components disclosed herein in any order. The term "component" as used herein includes individual components (e.g., silica abrasive, first polishing rate enhancer, second polishing rate enhancer, etc.) and any combination of components. For example, the abrasive can be dispersed in water, and the first and second polishing rate enhancers and any other additive materials can be added and mixed by any method that can incorporate the components into the polishing composition. If desired, the pH can be further adjusted at any appropriate time by adding an acid, base, or buffer as needed.

[0079] Thus, the polishing compositions described herein have particular properties exemplified by performance in Si polishing rate, low insoluble polishing debris formation, and / or minimal turbidity changes observed as the pH of the polishing composition decreases.

[0080] In the polishing composition disclosed herein, the silica abrasive and the first polishing rate enhancer are present in a weight ratio of about 10:1 to about 1:10, about 8:1 to about 1:8, about 5:1 to about 1:5, about 3:1 to about 1:3, about 3:2 to about 2:3, or about 3:2 to about 1:1. In some embodiments, the amount of silica abrasive present in the disclosed polishing composition is greater than the amount of the first polishing rate enhancer. In such embodiments, the silica abrasive and the first polishing rate enhancer are present in a weight ratio of about 5:2:1, about 4:2:1, about 3:2:1, about 2.5:2:1, or about 2.5:1.5:1. In some embodiments, the silica abrasive and the first polishing rate enhancer are present in a weight ratio ranging from about 5:1 to about 1:1, from about 4:1 to about 1:1, from about 3:1 to about 1:1, from about 2.5:1 to about 1:1, or from about 2:1 to about 1:1. In some embodiments, the silica abrasive and the first polishing rate enhancer are present in the disclosed polishing composition in a weight ratio of from about 2:1 to about 1:1. In one embodiment, the silica abrasive and the first polishing rate enhancer are present in the polishing composition in a weight ratio of about 2:1.

[0081] In the polishing composition disclosed herein, the silica abrasive and the second polishing rate enhancer are present in a weight ratio of about 10:1 to about 1:10, about 8:1 to about 1:8, about 5:1 to about 1:5, about 1:3 to about 3:1, about 2.5:1 to about 1:2.5, or about 1:1.5 to about 1.5:1. In some embodiments, the amount of silica abrasive present in the disclosed polishing composition is less than the amount of the second polishing rate enhancer. In such embodiments, the silica abrasive and the second polishing rate enhancer are present in a weight ratio of about 1:5 to 2, about 1:4 to 2, about 1:3 to 2, about 1:2.5 to 2, about 1:2.5 to 1.5, or about 1:2.0 to 1.5. In some embodiments, the silica abrasive and the second polishing rate enhancer are present in the disclosed polishing composition in a weight ratio of about 1:1.5 to 1:2.5. In one embodiment, the silica abrasive and the second polishing rate enhancing agent are present in the polishing composition in a weight ratio of about 1:1.67.

[0082] In the polishing composition disclosed herein, the first polishing rate enhancer and the second polishing rate enhancer are present in a weight ratio of about 10:1 to about 1:10, about 8:1 to about 1:8, about 5:1 to about 1:5, or about 1:3.5 to about 3.5:1. In some embodiments, the amount of the first polishing rate enhancer present in the disclosed polishing composition is less than the amount of the second polishing rate enhancer. In such embodiments, the silica abrasive and the second polishing rate enhancer are present in a weight ratio of about 1:5 to 2, about 1:4 to 2, about 1:3.5 to 2.5, or about 1:3.5 to 3.0. In some embodiments, the first polishing rate enhancer and the second polishing rate enhancer are present in the disclosed polishing composition in a weight ratio of about 1:2.5 to 1:3.5. In one embodiment, the silica abrasive and the second polishing rate enhancer are present in the polishing composition in a weight ratio of about 1:3.33. In some embodiments, the first polishing rate enhancer and the second polishing rate enhancer are present in the disclosed polishing composition at a weight ratio of about 1:3.5 to 1.2, about 1:3.0 to 1.3, or about 1:2.0 to 1.4.

[0083] For the polishing composition disclosed herein, the polishing composition has a silicon (Si) polishing rate of at least about 0.5 μm / min; at least about 0.6 μm / min; at least about 0.7 μm / min; at least about 0.8 μm / min; at least about 0.9 μm / min; at least about 1.0 μm / min; or at least about 1.1 μm / min. Additionally or alternatively, the polishing composition has a Si polishing rate of less than about 2.0 μm / min, less than about 1.8 μm / min, less than about 1.5 μm / min, less than about 1.25 μm / min, less than about 1.2 μm / min, less than about 1.1 μm / min, less than about 1.0 μm / min, less than about 0.95 μm / min, less than about 0.90 μm / min, less than about 0.85 μm / min, or less than about 0.80 μm / min. In some embodiments, the Si polishing rate ranges from about 0.5 μm / min to about 2.0 μm / min, from about 0.75 μm / min to about 2.0 μm / min, from about 0.7 μm / min to about 1.3 μm / min, from about 0.8 μm / min to about 1.2 μm / min, or from about 0.8 μm / min to about 1.1 μm / min.

[0084] For the polishing composition disclosed herein, the polishing composition has a Si:W, SiN, TEOS, TiN, Cu, and / or Mo polishing rate ratio of greater than about 10, about 20, about 30, about 40, about 50, about 60, about 70, about 80, about 90, about 100, about 125, about 150, about 175, about 200, about 300, about 400, or about 500. In some embodiments, the Si:W, SiN, TEOS, TiN, Cu, and / or Mo polishing rate ratio is in the range of about 100 to about 1000, about 100 to about 1000, about 200 to about 1000, about 300 to about 1000, about 40 to about 1000, or about 5000 to about 1000.

[0085] For the polishing compositions disclosed herein, the polishing compositions exhibit a turbidity of less than about 100 NTU, less than about 99 NTU, less than about 98 NTU, less than about 97 NTU, less than about 96 NTU, less than about 95 NTU, less than about 94 NTU, less than about 93 NTU, less than about 92 NTU, less than about 91 NTU, or less than about 90 NTU at a pH selected from about 10, about 6.5, and about 5.0, when measured according to the Fujimi Turbidity Protocol. Additionally or alternatively, the disclosed polishing compositions exhibit a turbidity of at least about 85 NTU, at least about 86 NTU, at least about 87 NTU, at least about 88 NTU, at least about 89 NTU, at least about 90 NTU, at least about 91 NTU, at least about 92 NTU, at least about 93 NTU, at least about 94 NTU, at least about 95 NTU, at least about 96 NTU, at least about 97 NTU, or at least about 98 NTU at a pH selected from about 10, about 6.5, and about 5.0, when measured according to the Fujimi Turbidity Protocol.

[0086] For the polishing compositions disclosed herein, the disclosed polishing compositions exhibit a turbidity change of no more than about 10%, about 9%, about 8%, about 7%, about 6%, about 5%, about 4%, about 3%, about 2%, or about 1% when the pH of the polishing composition is lowered from about 10.0 to about 6.5, according to the Fujimi Turbidity Protocol. In some embodiments, the disclosed polishing compositions exhibit no turbidity change when the pH of the polishing composition is lowered from about 10.0 to about 6.5, according to the Fujimi Turbidity Protocol. In some embodiments, the disclosed polishing compositions exhibit a turbidity change in the range of about 0% to about 5%, about 0% to about 4.5%, about 0% to about 4%, about 0% to about 3.5%, about 0% to about 3%, about 0% to about 2.5%, about 0% to about 2%, about 0% to about 1.5%, or about 0% to about 1%. In some embodiments, the disclosed polishing compositions exhibit minimal turbidity change, i.e., less than about 5%.

[0087] Therefore, as described herein, in some embodiments, a polishing composition comprises a silica abrasive, a first polishing rate enhancer, and a second polishing rate enhancer, wherein the first polishing rate enhancer is an alkanolamine, the second polishing rate enhancer is a basic amino acid, and the polishing composition has a pH in the range of about 9.0 to about 11.0.

[0088] As in any of the above embodiments, the polishing composition exhibits a turbidity change of 10% or less when the pH of the polishing composition is lowered from a basic pH in the range of about 9.0 to about 11.0 to an acidic pH in the range of about 6.5 to about 5, according to the Fujimi Turbidity Protocol.

[0089] The polishing composition, as in any of the above embodiments, wherein the turbidity change is due to the formation of insoluble silica-containing polishing by-products.

[0090] As in any of the above embodiments, the polishing composition wherein insoluble silica-containing polishing by-products are formed during polycondensation of silicon oxide species derived from the silica abrasive.

[0091] As in any of the above embodiments, the polishing composition has a turbidity of less than 100 NTU at pH 10 when measured according to the Fujimi Turbidity Protocol.

[0092] As in any of the above embodiments, the polishing composition exhibits a turbidity change of 10% or less when the pH of the polishing composition is reduced from about 10.0 to about 6.5, according to the Fujimi Turbidity Protocol.

[0093] As in any of the above embodiments, the polishing composition wherein the first polishing rate enhancer reduces polycondensation of silicon oxide species.

[0094] As in any of the above embodiments, the polishing composition wherein the first polishing rate enhancer is an alkanolamine selected from the group consisting of monomethylethanolamine (MMEA), methyldiethanolamine (MDEA), dimethylethanolamine (DMEA), and combinations thereof.

[0095] The polishing composition, as in any of the above embodiments, wherein the alkanolamine is a non-cyclic alkanolamine containing no more than one nitrogen atom.

[0096] As in any of the above embodiments, the polishing composition wherein the first polishing rate enhancer is MMEA or MDEA.

[0097] As in any of the above embodiments, the polishing composition, wherein the first polishing rate enhancer is present in an amount ranging from 0.10 wt % to about 0.30 wt %.

[0098] As in any of the above embodiments, the polishing composition wherein the second polishing rate enhancer is a basic amino acid selected from the group consisting of L-arginine, L-histidine, L-lysine, L-ornithine, and combinations thereof.

[0099] As in any of the above embodiments, the polishing composition wherein the second polishing rate enhancer is L-arginine.

[0100] As in any of the above embodiments, the polishing composition, wherein the second polishing rate enhancer is present at a concentration of about 0.1 wt % to about 1.0 wt %.

[0101] As in any of the above embodiments, the polishing composition, wherein the first polishing rate enhancer and the second polishing rate enhancer are present in a weight ratio of about 1:2.0 to 1:4.0.

[0102] As in any of the above embodiments, the polishing composition, wherein the silica abrasive has a median particle size in the range of about 60 nm to about 80 nm.

[0103] The polishing composition, as in any of the above embodiments, wherein the silica abrasive is present in a concentration of about 0.1% to about 0.5% by weight.

[0104] As in any of the above embodiments, the polishing composition, wherein the silica abrasive and the first polishing rate enhancing agent are present in a weight ratio of about 2:1 to 1:1.

[0105] As in any of the above embodiments, the polishing composition, wherein the silica abrasive and the second polishing rate enhancing agent are present in a weight ratio of about 1:1.5 to 1:2.5.

[0106] The polishing composition as in any of the above embodiments, wherein the polishing composition has a pH in the range of about 9.5 to less than 10.5.

[0107] The polishing composition, as in any of the above embodiments, further comprising a pH adjuster.

[0108] The polishing composition, as in any of the above embodiments, wherein the pH adjuster is an acid present at a concentration of about 0.001 wt % to about 0.01 wt %.

[0109] The polishing composition, as in any of the above embodiments, wherein the pH adjuster is citric acid.

[0110] The polishing composition, as in any of the above embodiments, further comprising a polymer present in a concentration of about 0.001 to about 0.1 wt. %.

[0111] As in any of the above embodiments, the polishing composition wherein the polymer is selected from pullulan, starch, amylose, amylopectin, gum arabic (gum ghatti), locust bean gum (galactomannan), konjac glucomannan, cereal beta-glucan, and combinations thereof.

[0112] The polishing composition of any of the above embodiments, wherein the polishing composition is stable for at least one week. In one embodiment, the pH of the composition remains unchanged after at least one week. In another embodiment, the electrical conductivity (EC) of the composition remains unchanged after at least one week. In some embodiments, the electrical conductivity is greater than 0 to about 10.0 mS / cm, greater than 0 to about 8.0 mS / cm, greater than 0 to about 7.5 mS / cm, greater than 0 to about 7.0 mS / cm, greater than 0 to about 6.5 mS / cm, greater than 0 to about 6.0 mS / cm, greater than 0 to about 5.5 mS / cm, greater than 0 to about 5.0 mS / cm, greater than 0 to about 4.5 mS / cm, or greater than 0 to about 4.0 mS / cm. In some embodiments, the electrical conductivity is about 0.01 mS / cm to about 1.0 mS / cm, about 0.02 mS / cm to about 0.50 mS / cm, or about 0.03 mS / cm to about 0.1 mS / cm, or about 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.10, 0.11, 0.12, 0.13, 0.14, or 0.15 mS / cm. In some embodiments, the upper limit of the electrical conductivity is about 0.25 mS / cm, about 0.20 mS / cm, about 0.18 mS / cm, about 0.16 mS / cm, about 0.14 mS / cm, about 0.12 mS / cm, about 0.10 mS / cm, about 0.08 mS / cm, about 0.07 mS / cm, about 0.06 mS / cm, about 0.05 mS / cm, about 0.04 mS / cm, or about 0.03 mS / cm. In further embodiments, the electrical conductivity is in the range of about 0.2 mS / cm to about 1.0 mS / cm.

[0113] Furthermore, in some embodiments, there is provided a polishing composition comprising a silica abrasive, a first polishing rate enhancer, and a second polishing rate enhancer, wherein the silica abrasive has a median particle size in the range of about 65 nm to about 75 nm and is present in a concentration of about 0.25 wt % to about 0.35 wt %; the first polishing rate enhancer is MMEA or MDEA and is present in an amount in the range of about 0.10 to about 0.15 wt %; and the second polishing rate enhancer is L-arginine and is present in an amount in the range of about 0.25 to about 0.75 wt %, and the polishing composition has a pH in the range of about 10.0 to about 10.5.

[0114] The polishing composition, as in any of the above embodiments, further comprising citric acid as a pH adjuster.

[0115] As in any of the above embodiments, the polishing composition has a Si removal rate (RR) of about 0.7 μm / min or more, or in the range of about 0.75 μm / min to about 2.0 μm / min.

[0116] As in any of the above embodiments, the polishing composition has a Si polishing rate higher than the polishing rate of W, SiN, TiN, TEOS, Cu, and / or Mo.

[0117] In one embodiment, the polishing composition disclosed herein can be used to polish a substrate. The substrate can include a Si layer. In one embodiment, the substrate includes a layer of W, SiN, TiN, TEOS, Cu, Mo, or a combination thereof. In one embodiment, the polishing composition disclosed herein can be used to polish a substrate having a bare silicon layer. C. Method of Using the Polishing Composition The polishing composition described herein is useful for polishing any suitable substrate. In one embodiment, the substrate to be polished can be any suitable substrate containing at least one layer of silicon (Si). In another embodiment, the polishing composition can be used to polish a substrate containing a silica layer. Suitable substrates include, but are not limited to, flat panel displays, integrated circuits, memory or rigid disks, metals, semiconductors, ILD devices, microelectromechanical systems (MEMS), ferroelectrics, and magnetic heads.

[0118] In some embodiments, the substrate can further include at least one other layer, which in some embodiments includes a metal such as tungsten (W), molybdenum (Mo), and / or copper (Co).

[0119] In some embodiments, the substrate can further include at least one other layer, such as an insulating layer. The insulating layer can be a metal oxide, a porous metal oxide, a glass, an organic polymer, a fluorinated organic polymer, or any other suitable high-K or low-K insulating layer. The insulating layer can comprise, consist essentially of, or consist of silicon oxide, SiN, or a combination thereof. The silicon oxide layer can comprise, consist essentially of, or consist of any suitable silicon oxide, many of which are known in the art. For example, the silicon oxide layer can include tetraethoxysilane (TEOS), high-density plasma (HDP) oxide, borophosphosilicate glass (BPSG), high-aspect-ratio process (HARP) oxide, spin-on dielectric (SOD) oxide, chemical vapor deposition (CVD) oxide, plasma-enhanced tetraethyl orthosilicate (PETEOS), thermal oxide, or undoped silicate glass.

[0120] In some embodiments, at least one other layer can be a titanium nitride (TiN) film. TiN thin films have recently been shown to exhibit many properties suitable for many applications in the microelectronics industry, such as ohmic contacts and / or metal diffusion barriers in semiconductor devices. In addition, because TiN exists in several sub-stoichiometric forms, it is possible to manipulate its properties by controlling the nitrogen stoichiometry. This manipulation results in changes in conductivity, color, optical behavior, and hardness that depend solely on the nitrogen concentration.

[0121] The subject matter disclosed herein also includes a method for polishing a substrate with the polishing composition described herein. The method for polishing a substrate includes the steps of: (a) preparing a substrate; (b) preparing a polishing composition described herein; (c) applying the polishing composition to at least a portion of the substrate; and (d) grinding at least a portion of the substrate with the polishing composition to polish the substrate.

[0122] In a method for polishing a substrate, the polishing composition disclosed herein has a silicon (Si) polishing rate of at least about 0.5 μm / min; at least about 0.6 μm / min; at least about 0.7 μm / min; at least about 0.8 μm / min; at least about 0.9 μm / min; at least about 1.0 μm / min; or at least about 1.1 μm / min. Additionally or alternatively, the polishing composition has a Si polishing rate of less than about 2.0 μm / min, less than about 1.8 μm / min, less than about 1.5 μm / min, less than about 1.25 μm / min, less than about 1.2 μm / min, less than about 1.1 μm / min, less than about 1.0 μm / min, less than about 0.95 μm / min, less than about 0.90 μm / min, less than about 0.85 μm / min, or less than about 0.80 μm / min. In some embodiments, the Si polishing rate ranges from about 0.5 μm / min to about 2.0 μm / min, from about 0.75 μm / min to about 2.0 μm / min, from about 0.7 μm / min to about 1.3 μm / min, from about 0.8 μm / min to about 1.2 μm / min, or from about 0.8 μm / min to about 1.1 μm / min.

[0123] In a method of polishing a substrate, the polishing composition disclosed herein has a silicon polishing rate that is higher than the polishing rate of at least one or more of W, SiN, TEOS, TiN, Cu, and / or Mo. In some embodiments, the silicon polishing rate is at least about 1%, about 5%, about 10%, about 15%, about 20%, about 25%, about 30%, about 35%, about 40%, about 45%, about 50%, about 55%, about 60%, about 65%, about 70%, about 75%, about 80%, about 85%, about 90%, or at least 95% higher than the polishing rate of at least one or more of W, SiN, TEOS, TiN, Cu, and / or Mo.

[0124] In a method of polishing a substrate, the polishing composition disclosed herein has a Si:W, SiN, TEOS, TiN, Cu, and / or Mo polishing rate ratio of greater than about 10, about 20, about 30, about 40, about 50, about 60, about 70, about 80, about 90, about 100, about 125, about 150, about 175, or about 200. In some embodiments, the Si:W, SiN, TEOS, TiN, Cu, and / or Mo polishing rate ratio is in the range of about 2 to about 200, about 5 to about 175, about 10 to about 150, about 25 to about 125, about 50 to about 100, or about 60 to about 80.

[0125] In a method of polishing a substrate, the polishing composition disclosed herein exhibits a turbidity of less than about 100 NTU, less than about 99 NTU, less than about 98 NTU, less than about 97 NTU, less than about 96 NTU, less than about 95 NTU, less than about 94 NTU, less than about 93 NTU, less than about 92 NTU, less than about 91 NTU, or less than about 90 NTU at a pH selected from about 10, about 6.5, and about 5.0, when measured according to the Fujimi Turbidity Protocol. Additionally or alternatively, the disclosed polishing compositions exhibit a turbidity of at least about 85 NTU, at least about 86 NTU, at least about 87 NTU, at least about 88 NTU, at least about 89 NTU, at least about 90 NTU, at least about 91 NTU, at least about 92 NTU, at least about 93 NTU, at least about 94 NTU, at least about 95 NTU, at least about 96 NTU, at least about 97 NTU, or at least about 98 NTU at a pH selected from about 10, about 6.5, and about 5.0, when measured according to the Fujimi Turbidity Protocol.

[0126] In a method of polishing a substrate, the polishing composition disclosed herein exhibits a turbidity change of not more than about 10%, about 9%, about 8%, about 7%, about 6%, about 5%, about 4%, about 3%, about 2, or about 1 when the pH of the polishing composition is reduced from about 10.0 to about 6.5, according to the Fujimi Turbidity Protocol. In some embodiments, the disclosed polishing composition exhibits no turbidity change when the pH of the polishing composition is reduced from about 10.0 to about 6.5, according to the Fujimi Turbidity Protocol. In some embodiments, the disclosed polishing composition exhibits a turbidity change in the range of about 0% to about 5%, about 0.5% to about 4.5%, about 1% to about 4.5%, about 1.5% to about 4.0%, or about 2% to about 3%.

[0127] Thus, as described herein, in some embodiments, a method of using a polishing composition includes the steps of: a) preparing a polishing composition described herein; b) preparing a substrate including a Si-containing layer (containing Si as the object to be polished); and c) polishing the substrate with the polishing composition to provide a polished substrate.

[0128] The method as in any of the above embodiments, wherein the substrate is a semiconductor.

[0129] As in any of the above embodiments, the method wherein the Si polishing rate (RR) is about 0.7 μm / min or greater, or in the range of about 0.75 μm / min to about 2.0 μm / min.

[0130] As in any of the above embodiments, the method further comprises the step of diluting the polishing composition of step (a) with a diluent at least about 1 to about 5 times.

[0131] The method as in any of the above embodiments, wherein the diluent is water.

[0132] The method as in any of the above embodiments, wherein the substrate further comprises a layer of W, SiN, TiN, TEOS, Cu, Mo, or a combination thereof.

[0133] A method as in any of the above embodiments, wherein during polishing step (c), the first RR improving agent reduces the formation of silicon oxide species that can form insoluble silica-containing polishing by-products. D. Working Example The following preparations and examples are given to enable those skilled in the art to more clearly understand and to practice the present invention, and should not be considered as limiting the scope of the invention, but merely as illustrative and representative thereof.

[0134] In one aspect, a method of making the polishing composition is disclosed. In another aspect, a method of using the polishing composition to polish a material is disclosed.

[0135] The present invention encompasses the following aspects and configurations.

[0136] 1. A polishing composition comprising an abrasive containing silica, a first polishing rate enhancer, and a second polishing rate enhancer, wherein the first polishing rate enhancer is an alkanolamine having no primary amine group, and the second polishing rate enhancer is a basic amino acid, and the pH is in the basic range.

[0137] 2. The alkanolamine is N(R 1 )(R 2 )(R 3 ) and R 1 ~R 3 are each independently selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group, with the proviso that R 1 ~R 3 2. The polishing composition according to 1., wherein at least one of the groups is an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group.

[0138] 3. The polishing composition according to 1. or 2., wherein the alkanolamine is a non-cyclic alkanolamine containing one nitrogen atom.

[0139] 4. The polishing composition according to any one of 1. to 3., wherein the first polishing rate enhancer is an alkanolamine selected from the group consisting of monomethylethanolamine (MMEA), methyldiethanolamine (MDEA), dimethylethanolamine (DMEA), and combinations thereof.

[0140] 5. The polishing composition according to any one of 1. to 4., wherein the first polishing rate enhancer is present in an amount ranging from about 0.05 to 0.5% by weight.

[0141] 6. The polishing composition according to any one of 1. to 5., wherein the second polishing rate enhancer is L-arginine.

[0142] 7. The polishing composition according to any one of 1. to 6., wherein the first polishing rate enhancer and the second polishing rate enhancer are present in a weight ratio of about 1:1.5 to 1:3.5.

[0143] 8. The polishing composition according to any one of 1. to 7., wherein the abrasive and the first polishing rate enhancer are present in a weight ratio of about 2:1 to 1:1.

[0144] 9. The polishing composition according to any one of 1. to 8., wherein the abrasive and the second polishing rate enhancer are present in a weight ratio of about 1:1.5 to 1:2.5.

[0145] 10. The polishing composition according to any one of 1. to 9., which contains a polymer and / or a chelating agent.

[0146] 11. The polishing composition according to claim 10, wherein the polymer is selected from pullulan, starch, amylose, amylopectin, gum arabic (gum ghatti), locust bean gum (galactomannan), konjac glucomannan, and cereal β-glucan.

[0147] 12. A polishing composition comprising an abrasive containing silica, a first polishing rate enhancer, and a second polishing rate enhancer, wherein the first polishing rate enhancer is an alkanolamine selected from the group consisting of monomethylethanolamine (MMEA), methyldiethanolamine (MDEA), dimethylethanolamine (DMEA), and combinations thereof, and is present in an amount ranging from about 0.05 to 0.5% by weight, and the second polishing rate enhancer is L-arginine, and is present in an amount ranging from about 0.1 to 1% by weight, and having a pH ranging from about 9 to about 11.

[0148] 13. A method for manufacturing a substrate, comprising: (a) preparing a polishing composition described in any one of 1. to 12.; (b) preparing a substrate containing Si as an object to be polished; and (c) polishing the substrate with the polishing composition to provide a polished substrate. [Example]

[0149] Fujimi Turbidity Protocol The following protocol was used to measure turbidity and turbidity change as a function of pH for the disclosed polishing slurries. The protocol included the following steps:

[0150] Step 1: Measure the initial turbidity of the slurry by placing a 15 mL aliquot of the slurry into a cuvette. The pH of the slurry is 10.

[0151] Step 2: The cuvette from step 1 containing the aliquot of slurry is placed in a turbidity reader (Micro TPI, Scientific, Inc.). This instrument operates as specified in ISO 7027 and DIN 27027 in measuring the turbidity of the sample. The turbidity of the sample is read at room temperature.

[0152] Step 3: Once the reading is complete, remove the cuvette from the reader and discard the aliquot of slurry that was in the cuvette. Rinse the cuvette three times with 15 mL of deionized water (DIW) to clean it.

[0153] Step 4: Take a 50 mL sample of the slurry from step 1 and place it in a 100 mL beaker. Add 5% HNO3 solution dropwise to the slurry while stirring to lower the pH of the slurry. Continue to monitor the pH of the slurry as you add 5% HNO3 solution until the pH meter consistently reads pH 6.5. At this point, the pH has been successfully lowered from 10 to 6.5.

[0154] Step 5: Measure the turbidity of the acidified slurry sample from step 4 by placing a 15 mL aliquot of this slurry into the cuvette washed in step 3. The pH of the slurry is 6.5.

[0155] Step 6: Place the cuvette from step 5 containing the aliquot of acidified slurry into a turbidity reader (Micro TPI, Scientific, Inc.) Read the turbidity of the sample at room temperature.

[0156] Step 7: Once the reading is complete, remove the cuvette from the reader and discard the aliquot of acidified slurry that was in the cuvette. Rinse the cuvette three times with 15 mL of deionized water (DIW) to clean the cuvette.

[0157] Step 8: Take the acidified slurry with a pH of 6.5 from step 4 and add 5% HNO3 solution dropwise to the slurry while stirring to continue lowering the pH of the slurry. Continue to monitor the pH of the slurry as you add 5% HNO3 solution until the pH meter consistently reads pH 5.0. At this point, the pH has been successfully lowered from 6.5 to 5.0.

[0158] Step 9: Measure the turbidity of the acidified slurry sample from step 8 by placing a 15 mL aliquot of this slurry into the cuvette washed in step 7. The pH of the slurry is 5.0.

[0159] Step 10: Place the cuvette from step 9 containing the aliquot of acidified slurry into a turbidity reader (Micro TPI, Scientific, Inc.) Read the turbidity of the sample at room temperature.

[0160] All three readings from the aliquots of slurry at pH 10, 6.5 and 5.0 are recorded. The units of measurement are NTU (Nephelometric Turbidity Units). [Example]

[0161] Polishing conditions Materials and equipment used: ·Polishing conditions ·Westech 200mm Polisher Platen rotation speed: 112 rpm Head rotation speed: 93 rpm ·Flow rate: 100mL / min Downforce: 4psi ·Polishing time: 60 seconds Pad: Vision pad (TradeMark) VP6000, Dupont Dilution ratio: 1x Equipment: Westech (200mm polisher), Polishing pad: VP6000, Pad conditioner: 3M A165 Polishing recipe: Downforce: 4.0psi Rotation: 112 / 93 rpm Slurry flow rate: 100 mL / min ·Polishing time: 60 seconds [Example]

[0162] Evaluation of various polishing compositions For this study, slurries A to H were prepared, each containing a different type of first polishing rate enhancer, as shown in Table 1 below. PL-3 used ultra-high purity colloidal silica manufactured by Fuso Chemical Co., Ltd. The slurries used water as the aqueous carrier, and some slurries contained a small amount of citric acid, which did not significantly affect the pH fluctuations.

[0163] [Table 1]

[0164] Table 2 summarizes the chemical names of the first polishing rate enhancers used in slurries A to H.

[0165] [Table 2]

[0166] The silicon polishing rates of slurries A to H were measured, and the turbidity and turbidity change were measured when they were screened using the Fujimi turbidity protocol. The results are shown in Table 3 below.

[0167] [Table 3]

[0168] These results show that, when tested using the Fujimi turbidity protocol, slurries C, D, and H exhibit the smallest turbidity change when the pH of the polishing composition is lowered from 10 to 6.5. Slurries A and F exhibit moderate turbidity changes when the pH of the polishing composition is lowered from 10 to 6.5 when tested using the Fujimi turbidity protocol, while slurries B and G exhibited the largest turbidity changes. Furthermore, a comparison of the polishing rate of slurry A with that of slurries C, D, and H, for example, reveals that MMEA, MDEA, and DMEA function as polishing rate enhancers.

[0169] In the next study, slurries I to K were prepared, each containing different amounts of the first polishing rate enhancer, and the effects of the presence of a polymer and / or chelating agent in these polishing compositions (which were not present in slurries A to H above). The compositions of slurries I to K are shown in Table 4 below. The slurries used water as the aqueous carrier, and contained trace amounts of citric acid, which did not significantly affect pH fluctuations.

[0170] [Table 4]

[0171] The silicon polishing rates and turbidity characteristics (when tested with the Fujimi turbidity protocol) were determined for Slurries I through K. The results of these studies are shown in Table 5.

[0172] [Table 5]

[0173] These results indicate that increasing the amount of the first polishing rate enhancer in the polishing composition increases the silicon polishing rate, as can be seen by comparing the silicon polishing rates of Slurries I and K. In addition, an increase was observed when a polymer such as pullulan was added to the polishing composition, as can be seen by comparing the silicon polishing rates of Slurries I and J. However, essentially no change was observed in the turbidity characteristics of Slurries I to K.

[0174] Finally, slurries L to N in Table 6 were investigated, which did not contain a second polishing rate enhancer but contained different types and amounts of the first polishing rate enhancer. The compositions are shown below. The slurries used water as the aqueous carrier.

[0175] [Table 6]

[0176] The silicon polishing rates of these slurries and the results of screening them using the Fujimi turbidity protocol are shown in the table below.

[0177] [Table 7]

[0178] The results in Table 7 essentially demonstrate that at least a first polishing rate enhancer is required to obtain a high silicon polishing rate, as can be seen by comparing Slurries L and M with N, which does not contain a polishing rate enhancer. Furthermore, Table 7 suggests that while a high silicon polishing rate can be achieved in the absence of a second polishing rate enhancer (see Slurries L and M), beneficial turbidity characteristics were not observed. However, a comparison of the polishing rate of Slurry A (containing arginine) with the polishing rate of Slurry N (not containing arginine) indicates that arginine functions as a polishing rate enhancer.

[0179] It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

Claims

1. a polishing agent containing silica, a first polishing rate enhancer, and a second polishing rate enhancer; the first polishing rate enhancer is an alkanolamine having no primary amine group, the second polishing rate enhancer is a basic amino acid, pH is in the basic region, Polishing composition.

2. The alkanolamine is N(R １ ) (R ２ ) (R ３ ) and R １ ~R ３ are each independently selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group, provided that R １ ~R ３ 2. The polishing composition according to claim 1, wherein at least one of the groups is an alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group.

3. 2. The polishing composition according to claim 1, wherein the alkanolamine is a non-cyclic alkanolamine containing one nitrogen atom.

4. 2. The polishing composition according to claim 1, wherein the first polishing rate enhancer is an alkanolamine selected from the group consisting of monomethylethanolamine (MMEA), methyldiethanolamine (MDEA), dimethylethanolamine (DMEA), and combinations thereof.

5. 2. The polishing composition of claim 1, wherein the first polishing rate enhancer is present in an amount ranging from about 0.05 to 0.5 wt. %.

6. 2. The polishing composition according to claim 1, wherein the second polishing rate enhancer is L-arginine.

7. 2. The polishing composition according to claim 1, wherein the first polishing rate enhancer and the second polishing rate enhancer are present in a weight ratio of about 1:1.5 to 1:3.

5.

8. 2. The polishing composition of claim 1, wherein the abrasive and the first polishing rate enhancing agent are present in a weight ratio of about 2:1 to 1:

1.

9. 2. The polishing composition of claim 1, wherein the abrasive and the second polishing rate enhancing agent are present in a weight ratio of about 1:1.5 to 1:2.

5.

10. The polishing composition of claim 1 , comprising a polymer and / or a chelating agent.

11. 11. The polishing composition of claim 10, wherein the polymer is selected from pullulan, starch, amylose, amylopectin, gum arabic (gum ghatti), locust bean gum (galactomannan), konjac glucomannan, cereal β-glucan, and combinations thereof.

12. a polishing agent containing silica, a first polishing rate enhancer, and a second polishing rate enhancer; the first polishing rate enhancer is an alkanolamine selected from the group consisting of monomethylethanolamine (MMEA), methyldiethanolamine (MDEA), dimethylethanolamine (DMEA), and combinations thereof, and is present in an amount ranging from about 0.05 to 0.5 wt. %; the second polishing rate enhancer is L-arginine and is present in an amount ranging from about 0.1 to 1 wt. %; having a pH in the range of about 9 to about 11; Polishing composition.

13. (a) preparing the polishing composition according to any one of claims 1 to 12; (b) preparing a substrate containing Si as an object to be polished; and (c) polishing the substrate with the polishing composition to provide a polished substrate. A method for manufacturing a substrate, comprising:

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