Light-emitting device and manufacturing method of light-emitting device

Abstract

To suppress a manufacture defect such as solder ball generation.SOLUTION: A light-emitting device comprises a semiconductor light-emitting element and a package. The package includes a substrate and a lid joined to the substrate. The substrate includes a first top face region directly or indirectly supporting the semiconductor light-emitting element and a second top face region enclosing the first top face region in a planar view watching the first top face region in a normal direction. The package includes: an inner metal layer positioned on the second top face region of the substrate; an outer metal layer which is parallel along an outer edge of the inner metal layer; and a slit part positioned between the inner metal layer and the outer metal layer on the second top face region. In the planar view, an inner edge of the inner metal layer is positioned inside of an outer edge of the lid and in the planar view, at least a portion of an outer edge of the outer metal layer is positioned outside of the outer edge of the lid. The lid is joined to the substrate by a joint material provided on the inner metal layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] Patent Document 1 discloses a package that seals electronic components and wiring circuits, etc. Patent Document 2 discloses a package that hermetically seals an infrared detection element. The packages disclosed in Patent Documents 1 and 2 each include a substrate that supports the electronic components and a lid. A metal layer provided on the substrate and a metal layer provided on the lid are joined by solder, thereby sealing the electronic components in the package. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-54856 [Patent Document 2] Japanese Patent Application Laid-Open No. 2014-67895 Summary of the Invention [Problem to be solved by the invention]

[0004] When the package disclosed in Patent Document 1 or Patent Document 2 is adopted, a portion of the bonding material that bonds the base material and the lid may flow out of the package, which may result in manufacturing defects such as the generation of solder balls.

[0005] The present disclosure provides a light emitting device including a package that can solve these problems, and a method for manufacturing the light emitting device. [Means for solving the problem]

[0006] In an exemplary embodiment, the light-emitting device of the present disclosure comprises a semiconductor light-emitting element and a package that seals the semiconductor light-emitting element, the package having a base material and a lid bonded to the base material, the base material having a first top surface region that directly or indirectly supports the semiconductor light-emitting element and a second top surface region that surrounds the first top surface region in a planar view seen from the normal direction of the first top surface region, the package having an inner metal layer located on the second top surface region of the base material, an outer metal layer that is parallel to the outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region, wherein, in the planar view, the inner edge of the inner metal layer is located inside the outer edge of the lid, and in the planar view, at least a portion of the outer edge of the outer metal layer is located outside the outer edge of the lid, and the lid is bonded to the base material by a bonding member provided on the inner metal layer.

[0007] In an exemplary embodiment, a manufacturing method for a light-emitting device of the present disclosure includes the steps of: preparing a substrate having, in a planar view, a first upper surface region and a second upper surface region surrounding the first upper surface region, an inner metal layer located on the second upper surface region, an outer metal layer parallel to the outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second upper surface region; and preparing a lid; arranging a semiconductor light-emitting element on the first upper surface region of the substrate; attaching a bonding member to the inner metal layer; and bonding the lid and the substrate via the bonding member. [Effects of the Invention]

[0008] According to an embodiment of the present disclosure, there is provided a light emitting device including a package that can prevent the flow of bonding material and prevent manufacturing defects such as the occurrence of solder balls, and a method for manufacturing the light emitting device. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is an exploded perspective view of a light emitting device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view of the light emitting device according to the first embodiment of the present disclosure. [Figure 3] FIG. 3 is a cross-sectional view of the light emitting device taken along line III-III shown in FIG. [Figure 4] FIG. 4 is a plan view of the light emitting device according to the first embodiment of the present disclosure with the lid removed. [Figure 5] FIG. 5 is a bottom view of the lid. [Figure 6] FIG. 6 is an enlarged view of the joint between the base and the lid. [Figure 7A] FIG. 7A is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 7B] FIG. 7B is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 7C] FIG. 7C is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 7D] FIG. 7D is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 8A] FIG. 8A is a schematic diagram for explaining that the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 8B] FIG. 8B is a schematic diagram for explaining that the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 8C] FIG. 8C is a schematic diagram for explaining that the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 8D] FIG. 8D is a schematic diagram for explaining that the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 9] FIG. 9 is a bottom view of the lid further comprising a second lid-side metal layer. [Figure 10] FIG. 10 is an enlarged view of the joint between the base and the lid in a modified example of the flow suppressing structure. [Figure 11]FIG. 11 is a bottom view of the lid further having ridges. [Figure 12] FIG. 12 is an enlarged view of the joint between the base and the lid according to another modified example of the flow suppressing structure. [Figure 13] FIG. 13 is a plan view of the light emitting device according to the first embodiment of the present disclosure, in which a plurality of semiconductor light emitting elements are arranged, with the lid removed. [Figure 14] FIG. 14 is an exploded perspective view of a light emitting device according to the second embodiment of the present disclosure. [Figure 15] FIG. 15 is a plan view of the light emitting device according to the second embodiment of the present disclosure with the lid removed. [Figure 16] FIG. 16 is a cross-sectional view of the light emitting device according to the second embodiment of the present disclosure parallel to the XZ plane. [Figure 17] FIG. 17 is an enlarged view of the joint between the base and the lid. [Figure 18] FIG. 18 is a plan view of a substrate further having another inner metal layer positioned inside the inner edge of the inner metal layer. [Figure 19] FIG. 19 is a plan view of a light emitting device according to a second embodiment of the present disclosure in which a plurality of semiconductor light emitting elements are arranged, with the lid removed. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The following embodiments are merely examples, and the light-emitting device according to the present disclosure is not limited to the following embodiments. For example, the numerical values, shapes, materials, steps, and the order of the steps shown in the following embodiments are merely examples, and various modifications are possible as long as no technical contradictions occur. Furthermore, the various aspects described below are merely examples, and various combinations are possible as long as no technical contradictions occur.

[0011] The dimensions, shapes, etc. of components shown in the drawings may be exaggerated for clarity and may not reflect the dimensions, shapes, and size relationships between components in an actual light-emitting device. Also, to avoid overly complicated drawings, some elements may be omitted.

[0012] In the following description, components having substantially the same functions are denoted by common reference symbols, and their descriptions may be omitted. Terms indicating specific directions or positions (e.g., "upper," "lower," "right," "left," and other terms including these terms) may be used. However, these terms are used merely to facilitate understanding of relative directions or positions in the referenced drawings. As long as the relationship of relative directions or positions indicated by terms such as "upper" and "lower" in the referenced drawings is the same, drawings other than those disclosed in this disclosure, actual products, manufacturing equipment, etc. may not be arranged in the same manner as in the referenced drawings.

[0013] In this specification and claims, polygons such as triangles and quadrilaterals are not limited to polygons in the strict mathematical sense, but also include shapes in which the corners of the polygon have been processed, such as rounded, chamfered, corner-removed, or rounded. Furthermore, shapes in which processing has been applied not only to the corners (edges) of polygons, but also to the middle portions of the edges are also referred to as polygons. In other words, shapes in which partial processing has been applied while retaining the polygon as a base are included in the term "polygon."

[0014] In the past, if the amount of bonding material was excessive, some of the bonding material would flow out of the package, causing manufacturing defects such as the generation of solder balls. On the other hand, if the amount of bonding material was small, although the generation of solder balls could be suppressed, bonding defects were more likely to occur, and as a result, it was sometimes difficult to ensure the airtightness of the package. According to the light-emitting device of the embodiment of the present disclosure, the above problem can be solved by forming an inner metal layer and an outer metal layer on the base material and further forming a slit portion between the inner metal layer and the outer metal layer.

[0015] An example of the configuration of a light emitting device according to an embodiment of the present disclosure will be described with reference to the drawings, in which mutually orthogonal X-axis, Y-axis, and Z-axis are shown for reference.

[0016] First Embodiment First, reference will be made to FIGS. 1 to 6. FIG. 1 is an exploded perspective view of a light-emitting device 100 according to a first embodiment. FIG. 2 is a plan view of the light-emitting device 100 as viewed from the normal direction of the support surface 15a of the base material 10. FIG. 3 is a cross-sectional view of the light-emitting device 100 taken along line III-III in FIG. 2. FIG. 4 is a plan view of the light-emitting device 100 without the lid 20 as viewed from the normal direction of the support surface 15a of the base material 10. FIG. 5 is a bottom view of the lid 20 as viewed from the lower surface region 20a side. FIG. 6 is an enlarged view of the joint between the base material 10 and the lid 20. The enlarged portion shown in FIG. 6 corresponds to the cross-section of the light-emitting device 100 taken along line VI-VI in FIG. 2.

[0017] The light emitting device 100 according to the first embodiment of the present disclosure includes a semiconductor light emitting element 40 and a package P that encapsulates the semiconductor light emitting element 40. The light emitting device 100 illustrated in FIG. 1 further includes a submount 30 that supports the semiconductor light emitting element 40 and an optical member 50 having a reflective surface that reflects light emitted from the semiconductor light emitting element 40 upward. However, as described below, the light emitting device 100 may include multiple semiconductor light emitting elements 40. Depending on the product specifications or required specifications, the light emitting device 100 may include a temperature sensor for measuring the internal temperature, such as a protection element typified by a Zener diode and / or a thermistor. Furthermore, the light emitting device 100 may include a light receiving element, such as a photodiode, for monitoring the intensity of light emitted from the semiconductor light emitting element 40.

[0018] 1 has a substantially rectangular parallelepiped shape. However, the shape of the light emitting device 100 is not limited to this. The size of the light emitting device 100 in the X direction is, for example, approximately 1.0 mm to 15.0 mm, and the size in the Y direction is approximately 1.0 mm to 15.0 mm. The thickness of the light emitting device 100 in the Z direction can be approximately 1.0 mm to 6.0 mm.

[0019] (Package P, substrate 10 and lid 20) The package P includes a substrate 10 and a lid 20 bonded to the substrate 10. The substrate 10 includes a bottom 10a having a support surface 15a and a sidewall 10b supported by the support surface 15a. The substrate 10 illustrated in FIG. 3 is a member in which the bottom 10a and the sidewall 10b are integrally formed, but is not limited to this. The bottom 10a and the sidewall 10b may be separate members, with the sidewall 10b bonded to the peripheral region of the support surface 15a of the bottom 10a. The submount 30 supporting the semiconductor light emitting element 40 and the optical member 50 are disposed on the support surface 15a and surrounded by the sidewall 10b.

[0020] As illustrated in FIGS. 3 and 4, the substrate 10 has a first upper surface region 11a that directly or indirectly supports the semiconductor light emitting element 40, and a second upper surface region 11b that surrounds the first upper surface region 11a in a planar view. In this specification, "planar view" refers to a planar view seen from the normal direction of the support surface 15a or the first upper surface region 11a. In the drawings, the normal direction of the support surface 15a or the first upper surface region 11a coincides with the Z direction. The substrate 10 has a step between the support surface 15a and the upper surface 15b of the sidewall portion 10b. The first upper surface region 11a is located on the support surface 15a, and the second upper surface region 11b is located on the upper surface 15b of the sidewall portion 10b, which is located above the support surface 15a. In other words, the package P included in the light emitting device 100 has a step between the first upper surface region 11a and the second upper surface region 11b. This allows the semiconductor light emitting element 40 and the second upper surface region 11b to which the lid 20 is bonded to be located apart, thereby preventing the semiconductor light emitting element 40 from being affected by heat and other factors generated when bonding the lid 20.

[0021] A recess is formed in the base material 10 due to the step between the first upper surface region 11a and the second upper surface region 11b. A sealed space V is formed in the package P by covering the recess formed in the base material 10 with a lid 20. The submount 30 is disposed in the sealed space V and supports the semiconductor light emitting element 40. However, the submount 30 is not essential. If the submount 30 is not present, the semiconductor light emitting element 40 is directly bonded to the first upper surface region 11a. If the submount 30 is present, the semiconductor light emitting element 40 is indirectly bonded to the first upper surface region 11a while being supported by the submount 30.

[0022] 1 is a plate-shaped member. As will be described later, the sealed space V can be sealed or hermetically sealed by joining the lid 20 to the base material 10. Hermetically sealing the sealed space V prevents the members disposed in the sealed space V from substantially deteriorating. Furthermore, as will be described later, when a laser diode emitting blue or green light is used as the semiconductor light-emitting element 40, the influence of dust collection by the laser light can be suppressed.

[0023] The substrate 10 can be formed mainly from, for example, ceramic, metal, glass, silicon, resin, etc. Examples of ceramic include aluminum nitride, silicon nitride, aluminum oxide, silicon carbide, etc.

[0024] The substrate 10 illustrated in FIG. 4 includes an inner metal layer 12a, an outer metal layer 12b, and a slit portion 13. The inner metal layer 12a and the outer metal layer 12b are located on the second upper surface region 11b of the substrate 10. In other words, the inner metal layer 12a and the outer metal layer 12b are provided on the upper surface 15b of the side wall portion 10b. In the illustrated example, the inner metal layer 12a is formed continuously along the inner edge of the upper surface 15b of the side wall portion 10b. The outer metal layer 12b is formed parallel to the outer edge of the inner metal layer 12a. The outer metal layer 12b does not need to be formed continuously so as to completely surround the inner metal layer 12a, but may be partially interrupted. The width of the outer metal layer 12b is not uniform along the outer edge of the inner metal layer 12a. For example, the width at each of the four corners of the outer shape of the substrate 10 may be wider than the width at other portions. As will be described later, the thickened portion can absorb excess joining material during joining and prevent the joining material from flowing out. Slit portion 13 is located between inner metal layer 12a and outer metal layer 12b on second upper surface region 11b.

[0025] As illustrated in FIG. 2 , in a plan view, the inner and outer edges of the inner metal layer 12a shown in FIG. 4 are located inside the outer edge of the lid 20. With this configuration, even a small amount of bonding material can be wetted and spread across the inner metal layer 12a, as described below. Furthermore, because the inner metal layer 12a, which contributes to bonding, is located inside the outer edge of the lid 20, a sufficient bonding area between the lid 20 and the inner metal layer 12a can be secured. This reduces airtightness defects. Furthermore, at least a portion of the outer edge of the outer metal layer 12b can be located outside the outer edge of the lid 20. With this configuration, the outer metal layer 12b can absorb excess bonding material not used to bond the lid 20 to the package P, thereby preventing the bonding material from flowing out. For example, in a plan view, the entire outer edge of the outer metal layer 12b may be located outside the outer edge of the lid 20 as shown in FIG. 2 , or a portion of the outer edge of the outer metal layer 12b may be located inside the outer edge of the lid 20 and overlap the lid 20. Alternatively, the entire inner edge of the outer metal layer 12b may be positioned outside the outer edge of the lid 20 so that the lid 20 and the outer metal layer 12b do not overlap.

[0026] In the X or Y direction, the width of the outer metal layer 12b is, for example, 30 μm or more and 1000 μm or less. The width of the inner metal layer 12a is larger than the width of the outer metal layer 12b, for example, about 2 to 4 times the width of the outer metal layer 12b. The thickness of each of the inner metal layer 12a and the outer metal layer 12b is, for example, 1 μm or more and 100 μm or less. The width of the slit portion 13 can be, for example, 30 μm or more. The width of the slit portion 13 is, for example, 30 μm or more and 500 μm or less, preferably 30 μm or more and 300 μm or less, and more preferably 30 μm or more and 150 μm or less. By setting the width of the slit portion 13 to 30 μm or more, as will be described later, even if the amount of bonding material is small, the slit portion 13 can reduce the area over which the bonding material spreads, thereby preventing poor airtightness. Furthermore, even if there is excess bonding material, the slit portion 13 reduces the amount of bonding material that wets and spreads onto the outer metal layer 12b, making it easier for the outer metal layer 12b to absorb the excess bonding material and preventing the bonding material from flowing out of the package.

[0027] The inner metal layer 12a and the outer metal layer 12b may be connected by one or more branches 14. The branches 14 are arranged to cross the slits 13. In the example shown in FIG. 4, the inner metal layer 12a and the outer metal layer 12b are connected by two branches 14. However, the number of branches 14 is not limited to two, and may be one, or three or more. The positions at which the branches 14 are arranged are not limited to the example shown, and may be arbitrary. The branches 14 can be used as alignment marks when placing components on the substrate 10 during the manufacture of the light-emitting device. The width of the branches 14 (the size in the X direction shown in FIG. 4) may be, for example, 30 μm or more and 200 μm or less. The branches 14 are particularly useful when forming a metal layer pattern by electrolytic plating, as described below, because they enable current to flow from the inner metal layer 12a to the second upper surface region 11b where the outer metal layer 12b will be formed via the branches 14.

[0028] As illustrated in FIGS. 5 and 6 , the lid 20 has a lower surface region 20a that faces the first upper surface region 11a and the second upper surface region 11b of the base material 10. The lid 20 may have a first lid-side metal layer 21a in a portion of the lower surface region 20a that faces the inner metal layer 12a. In the illustrated example, the first lid-side metal layer 21a includes an inner portion 21a-1 that is located inside the inner edge of the inner metal layer 12a in a plan view. In the X or Y direction, the width of the first lid-side metal layer 21a is greater than the width of the inner metal layer 12a. The gap between the base material 10 and the lid 20 at the joint between the first lid-side metal layer 21a and the inner metal layer 12a is, for example, 5 μm or more and 300 μm or less.

[0029] The lid 20 in this embodiment has a light-transmitting region that transmits light emitted from the semiconductor light-emitting element 40. The lid 20 can be made of, for example, sapphire. Sapphire is a material that is light-transmitting and also has relatively high strength. In addition to sapphire, the lid 20 can be made of a light-transmitting material such as glass, plastic, or quartz. Note that it is sufficient that the light-transmitting region of the lid 20 is made of a light-transmitting material, and the other portions do not need to be made of a light-transmitting material.

[0030] Each of the inner metal layer 12a, the outer metal layer 12b, and the first lid-side metal layer 21a may be formed from a metal material such as tungsten, molybdenum, nickel, gold, silver, platinum, titanium, copper, aluminum, ruthenium, etc. Each metal layer preferably has high wettability with respect to the bonding member.

[0031] The lid 20 is bonded to the base material 10 by a bonding member provided on the inner metal layer 12a. Specifically, the first lid-side metal layer 21a and the inner metal layer 12a are bonded by a bonding layer 70 formed from the bonding member, thereby hermetically sealing the semiconductor light-emitting element 40 in the package P. Examples of the bonding member may include metal materials such as gold-tin, a solder alloy, or a brazing material. In the following description, the outer metal layer 12b and the slit portion 13 on the second top surface region 11b of the base material 10 may be referred to as a "flow suppression structure." For ease of explanation, the bonding member may be given the same reference numeral as the bonding layer 70.

[0032] 7A to 7D are schematic diagrams illustrating the possibility of flow of the bonding material 70 when a flow suppression structure is not present. FIGS. 7A to 7D illustrate the possibility of solder balls being formed as an example. The inner metal layer 12a functions as a metal layer to which the bonding material 70 is attached. Consider a case where the outer metal layer 12b is not present outside the inner metal layer 12a when the lid 20 is bonded to the substrate 10. In this case, as the area of ​​the bonding material 70 attached to the inner metal layer 12a in contact with the first lid-side metal layer 21a increases, the bonding material 70 tends to overflow from the inner metal layer 12a and flow and spread beyond the outer edge of the lid 20 in a planar view. When the gap between the substrate 10 and the lid 20 is small, the bonding material 70 in the narrow space tends to spread beyond the outer edge of the lid 20 due to capillary action. As shown in FIG. 7C, a portion of the bonding material 70 that flows beyond the outer edge of the lid 20 forms a solder ball 71 on the second upper surface region 11b of the substrate 10, which is difficult to wet. As a result, as shown in Fig. 7D, one or more solder balls 71 are likely to occur along the outer edge of the lid 20. The solder balls 71 are formed on the second upper surface region 11b of the substrate 10, which is difficult to wet, and therefore tend to fall off. This may result in an electrical short circuit when the light-emitting device is incorporated into a module or the like.

[0033] 8A to 8D are schematic diagrams illustrating how the flow suppression structure suppresses the outflow of the bonding material 70. FIGS. 8A to 8D illustrate an example of suppressing the generation of solder balls. According to the flow suppression structure of this embodiment, no metal layer is provided in the slit portion 13, and the second upper surface region 11b of the substrate 10 is exposed. Therefore, the wettability of the slit portion 13 to the bonding material 70 is lower than that of the inner metal layer 12a and the outer metal layer 12b, making the bonding material 70 less likely to wet. Therefore, the slit portion 13 functions as a stopper that suppresses the spread of the bonding material 70. The slit portion 13 allows the amount of bonding material 70 required for sealing to be retained on the inner metal layer 12a. The outer metal layer 12b also functions as an absorption layer for excess bonding material 70. Excess bonding material 70 may overflow from the slit portion 13 and spread beyond the outer edge of the lid 20. Even in this case, a portion of the joining material 70 that reaches the outer metal layer 12b spreads and is absorbed by the surface of the outer metal layer 12b as shown in Fig. 8C or 8D. For example, even if the molten joining material flows out when joining the lid 20 to the base material 10 by soldering, the molten metal is absorbed by the surface of the outer metal layer 12b, thereby preventing the formation of solder balls.

[0034] Furthermore, the inner portion 21a-1 of the first lid-side metal layer 21a provided on the lower surface region 20a on the lid 20 side functions to wet and spread the bonding material 70 that spreads on the surface of the inner portion 21a-1. As a result, a portion of the bonding material 70 is prevented from protruding from the first lid-side metal layer 21a and scattering onto and adhering to the first upper surface region 11a of the base material 10, thereby ensuring the reliability of the semiconductor light-emitting element 40 or other electronic components disposed on the first upper surface region 11a.

[0035] In this way, the flow suppression structure can appropriately suppress the outflow of the joining member 70. Furthermore, even if the amount of joining member 70 is small, the slit portion 13 can keep the area over which the joining member 70 spreads small, making it less likely that poor airtightness will occur.

[0036] Modified examples of the flow suppressing structure according to this embodiment will be described with reference to Figures 9 to 12. The flow suppressing structure may further include a second lid-side metal layer or a ridge portion provided on the lid.

[0037] Fig. 9 is a bottom view of the lid 20-1 further having the second lid-side metal layer 21b, as seen from the lower surface region 20a side. Fig. 10 is an enlarged view of the bonding portion between the base material 10 and the lid 20-1. The enlarged portion shown in Fig. 10 corresponds to the enlarged portion shown in Fig. 6.

[0038] The lid 20-1 according to this modification may have a second lid-side metal layer 21b and a lid-side slit 22 in plan view. The second lid-side metal layer 21b is located inside the inner edge of the first lid-side metal layer 21a in the lower surface region 20a and parallel to the inner edge of the first lid-side metal layer 21a. The lid-side slit 22 is located between the first lid-side metal layer 21a and the second lid-side metal layer 21b. However, the second lid-side metal layer 21b does not need to be continuously formed along the inner edge of the first lid-side metal layer 21a as shown in the figure, and may be partially interrupted. The width of the lid-side slit 22 is, for example, 30 μm or more and 500 μm or less. The lid-side slit 22 functions as a stopper to prevent the bonding member 70 from spreading, similar to the slit 13 of the base material 10. The second lid-side metal layer 21b, similar to the outer metal layer 12b of the base material 10, functions to wet and spread the bonding member 70.

[0039] Fig. 11 is a bottom view of the lid 20-2, further having a ridge portion 23, as viewed from the side of the lower surface region 20a. Fig. 12 is an enlarged view of the bonding portion between the substrate 10 and the lid 20-2. The enlarged portion shown in Fig. 12 corresponds to the enlarged portion shown in Fig. 6.

[0040] The first lid-side metal layer 21a according to this modification includes an inner portion 21a-1 located inside the inner edge of the inner metal layer 12a in plan view. The lid 20-2 may have a ridge portion 23 that is provided on the inner portion 21a-1 of the first lid-side metal layer 21a in plan view and that extends parallel to the inner edge of the inner metal layer 12a. The ridge portion 23 may be located, for example, 30 μm to 500 μm away from the inner edge of the inner metal layer 12a. The ridge portion 23 does not need to be formed continuously along the inner edge of the inner metal layer 12a and may be partially interrupted. The ridge portion 23 may be formed of, for example, platinum, titanium, chromium, or SiO2. The ridge portion 23 functions as a stopper that suppresses the spread of the bonding member 70.

[0041] These modified examples appropriately suppress the occurrence of solder balls while suppressing the effects of solder splattering onto the support surface 15a inside the package, thereby ensuring the reliability of the semiconductor light-emitting element 40 or other electronic components.

[0042] (Submount 30) The submount 30 may have a rectangular parallelepiped shape, although the shape of the submount 30 is not limited to a rectangular parallelepiped. The submount 30 may be made of, for example, silicon nitride, aluminum nitride, or silicon carbide.

[0043] (Semiconductor light emitting element 40) An example of the semiconductor light-emitting element 40 is a laser diode. For example, a laser diode that emits blue light, a laser diode that emits green light, or a laser diode that emits red light can be used as the semiconductor light-emitting element 40. Furthermore, a laser diode that emits light other than visible light, such as near-infrared light or ultraviolet light, may also be used.

[0044] In this specification, blue light is light having a peak emission wavelength in the range of 420 nm to 494 nm, green light is light having a peak emission wavelength in the range of 495 nm to 570 nm, and red light is light having a peak emission wavelength in the range of 605 nm to 750 nm.

[0045] Examples of semiconductor light-emitting devices that emit blue light or green light include laser diodes containing nitride semiconductors. Examples of nitride semiconductors that can be used include GaN, InGaN, and AlGaN. Examples of semiconductor light-emitting devices that emit red light include those containing InAlGaP-based, GaInP-based, GaAs-based, and AlGaAs-based semiconductors.

[0046] (Optical member 50) An example of the optical member 50 has a prismatic shape. A prismatic prism is a columnar body with a polygonal base. Examples of the base of a columnar body include a triangle, a rectangle, and a pentagon. The shape of the optical member 50 is not limited to a prismatic prism. The optical member 50 may be formed from, for example, a light-transmitting material such as glass, plastic, or quartz, or from metal or silicon. The optical member 50 illustrated in FIG. 3 is a triangular prism member and has a reflecting surface 51 and a bottom surface 52. The bottom surface 52 is a bonding surface that bonds to the support surface 15a of the substrate 10.

[0047] The optical member 50 has a reflective surface 51 that reflects light emitted from the semiconductor light-emitting element 40 in a direction parallel to the support surface 15a toward the light-transmitting region of the lid 20. The reflective surface 51 is an inclined surface that is inclined with respect to the lower surface 52. The reflective surface 51 is inclined with respect to the lower surface 52 at an inclination angle of, for example, 25° to 65°. In the example of the light-emitting device 100 shown in the figure, the reflective surface 51 is inclined with respect to the lower surface 52 at an inclination angle of 45°. The reflective surface 51 may be a partially reflective surface that transmits part of the incident light and reflects the rest. The reflective surface 51 may be formed, for example, by providing a light reflection control film that reflects the incident light on a light-transmitting material. The light reflection control film may be formed of a metal film such as Ag or Al. Alternatively, the light reflection control film may be a dielectric multilayer film formed of Ta2O5 / SiO2, TiO2 / SiO2, Nb2O5 / SiO2, or the like.

[0048] Light emitted from the semiconductor light emitting element 40 in a direction parallel to the support surface 15a of the base material 10 (X direction in the figure) is reflected upward (Z direction in the figure) by the reflecting surface 51 of the optical member 50. The light emitting device 100 emits the light reflected by the reflecting surface 51 to the outside of the package P from the light-transmitting region of the lid 20.

[0049] The light-emitting device 100 of this embodiment may include multiple semiconductor light-emitting elements 40. FIG. 13 is a plan view of the light-emitting device 100 with the lid removed, in which multiple semiconductor light-emitting elements 40 are arranged. FIG. 13 illustrates three semiconductor light-emitting elements 40. The number of semiconductor light-emitting elements 40 is not limited to this and may be two, four, or more. The three semiconductor light-emitting elements 40 may emit light having different peak wavelengths selected from blue, green, and red, for example. In FIG. 13, the optical element 50 may have three reflective surfaces 51 that respectively reflect the light emitted from the three semiconductor light-emitting elements 40. Three optical elements may be used to provide three reflective surfaces 51, or one optical element may be used with its reflective area divided to provide three reflective surfaces 51. Such a light-emitting device may be used, for example, as a light source for a display device.

[0050] (Example of Manufacturing Method of Light Emitting Device 100) A manufacturing method for the light emitting device 100 in this embodiment may include step (A) of preparing a base material and a lid, step (B) of arranging a semiconductor light emitting element on a first upper surface region of the base material, step (C) of attaching a bonding member to the inner metal layer, and step (D) of bonding the lid and base material via the bonding member.

[0051] In step (A), a substrate 10 is prepared that has, in a plan view, a first upper surface region 11a and a second upper surface region 11b surrounding the first upper surface region 11a. Next, an inner metal layer 12a and an outer metal layer 12b that is parallel to the outer edge of the inner metal layer 12a are formed on the second upper surface region 11b of the substrate 10 by, for example, electroplating or vapor deposition. At this time, a slit portion 13 is formed between the inner metal layer 12a and the outer metal layer 12b by masking, for example, with a resist material, portions of the second upper surface region 11b where no metal film is to be formed.

[0052] When the lid 20 is bonded to the base material 10, a first lid-side metal layer 21a is formed by, for example, electrolytic plating or vapor deposition on a portion of the lower surface region 20a of the lid 20 that faces the inner metal layer 12a.

[0053] In step (B), the submount 30 to which the semiconductor light emitting element 40 is bonded and the optical member 50 are disposed on the first upper surface region 11a of the base material 10.

[0054] In step (C), a bonding member 70 (for example, solder) is applied to the inner metal layer 12a of the base material 10. The bonding member 70 may be applied to the first lid-side metal layer 21a.

[0055] In step (D), the lid 20 and the base material 10 are joined together via the joining member 70, for example by brazing. Through the above steps, the light emitting device 100 is obtained.

[0056] Second Embodiment A light emitting device according to a second embodiment of the present disclosure will be described with reference to Figures 14 to 19. The light emitting device according to the second embodiment differs from the light emitting device according to the first embodiment in that light emitted from the semiconductor light emitting element is emitted to the side of the package. The following mainly describes the differences from the light emitting device according to the first embodiment.

[0057] Fig. 14 is an exploded perspective view of light emitting device 101 according to the second embodiment. Fig. 15 is a plan view of light emitting device 101 without lid 20-3. Fig. 16 is a cross-sectional view of light emitting device 101 parallel to the XZ plane. Fig. 17 is an enlarged view of the joint between base material 10-1 and lid 20-3.

[0058] The light-emitting device 101 according to this embodiment includes a base 10-1, a lid 20-3, a submount 30, and a semiconductor light-emitting element 40 supported by the submount 30. The base 10-1 has a support surface 15a including a first upper surface region 11a and a second upper surface region 11b positioned outside the first upper surface region 11a. The lid 20-3 has a sidewall portion 20-3a supported by the support surface 15a and an upper surface portion 20-3b positioned on the sidewall portion 20-3a. The illustrated lid 20-3 is a member in which the sidewall portion 20-3a and the upper surface portion 20-3b are integrally formed, but this is not limiting. The sidewall portion 20-3a and the upper surface portion 20-3b may be separate members, and the upper surface portion 20-3b may be bonded to the upper surface of the sidewall portion 20-3a. The sidewall portion 20-3a has a translucent region that transmits light emitted from the semiconductor light-emitting element 40. At least the light-transmitting region of the lid 20-3 may be made of a light-transmitting material such as sapphire, glass, plastic, quartz, etc. The other portions do not have to be made of a light-transmitting material.

[0059] In the light emitting device 101, light emitted from the semiconductor light emitting element 40 in a direction parallel to the support surface 15a is emitted laterally to the outside of the package P from the light-transmitting region of the sidewall portion 20-3a.

[0060] The substrate 10-1 has an inner metal layer 12a, an outer metal layer 12b, and a slit portion 13 in a second upper surface region 11b. The sidewall portion 20-3a has a lower surface region 20a on a joining surface that is joined to the support surface 15a of the substrate 10-1. The flow suppression structure in this embodiment has substantially the same structure and function as the flow suppression structure in the first embodiment, and detailed description thereof will be omitted. The light emitting device 101 according to this embodiment can appropriately suppress the occurrence of solder balls, as in the first embodiment.

[0061] FIG. 18 is a plan view of a substrate 10-2 that further includes another inner metal layer 12c located inside the inner edge of the inner metal layer 12a.

[0062] The base material 10-2 may have another inner metal layer 12c located on the support surface 15a, in plan view, inside the inner edge of the inner metal layer 12a, and extending parallel to the inner edge of the inner metal layer 12a. Another slit portion 13-1 may be located between the inner metal layer 12a and the other inner metal layer 12c. Similar to the slit portion 13, the other slit portion 13-1 functions as a stopper that prevents the bonding member 70 from spreading. Similar to the outer metal layer 12b, the other inner metal layer 12c functions as an absorption layer for any excess bonding member 70. This flow suppression structure makes it possible to appropriately prevent the bonding member 70 from spreading toward the first upper surface region 11a of the support surface 15a.

[0063] 19 is a plan view of a light emitting device 101 with a lid removed, in which a plurality of semiconductor light emitting elements 40 are arranged. As in the first embodiment, the light emitting device 101 of this embodiment may also include a plurality of semiconductor light emitting elements 40. The three semiconductor light emitting elements 40 shown in the figure may emit light having different peak wavelengths selected from blue, green, and red, for example. Such a light emitting device may be used, for example, as a light source for a display device.

[0064] The flow suppression structure according to the embodiment of the present disclosure is not limited to semiconductor light emitting devices, but may also be applied to packages that encapsulate other electronic components such as light receiving elements. [Industrial Applicability]

[0065] The light-emitting device of the present disclosure can be used in, for example, a head-mounted display, a projector, a display, or a lighting fixture. [Explanation of symbols]

[0066] 10, 10-1, 10-2: Base material 10a: bottom 10b: Side wall part 11a: 1st top surface area 11b: Second top area 12a: Inner metal layer 12b: Outer metal layer 12c: Inner metal layer 13, 13-1: Slit section 14: Branch 15a: Support surface 15b:Top surface 20, 20-1, 20-2, 20-3: Lid 20-3a: Side wall part 20-3b:Top part 20a: Bottom area 21a: 1st lid side metal layer 21a-1:Inner part 21b: 2nd lid side metal layer 22: Lid side slit 23: Ridge 30: Submount 40: Semiconductor light emitting device 50: Optical components 51: Reflective surface 52: Bottom surface 70: Bonding layer (bonding material) 71: Solder ball 100, 101: Light-emitting device P: Package V: Sealed space

Claims

1. a semiconductor light-emitting element; a package that encapsulates the semiconductor light emitting device; Equipped with The package has a base and a lid joined to the base, The substrate is a first upper surface region that directly or indirectly supports the semiconductor light emitting element; a second upper surface region surrounding the first upper surface region in a plan view seen from a normal direction of the first upper surface region; and the second upper surface region is located above the first upper surface region, the substrate of the package has one or more substrate-side metal layers located on the second top surface region of the substrate; the lid of the package has one or more lid-side metal layers located in a portion of a lower surface region facing the first upper surface region and the second upper surface region, the portion facing the one or more base-side metal layers; In the plan view, an outermost edge of the one or more base-side metal layers is located outside an outermost edge of the one or more lid-side metal layers, In the plan view, an innermost edge of the one or more lid-side metal layers is located more inward than an innermost edge of the one or more base-side metal layers, the lid is joined to the base by a joining member provided on a region where the one or more base-side metal layers and the one or more lid-side metal layers overlap in the plan view, A light-emitting device in which a region of the one or more base-side metal layers that is located outside the outermost edge of the one or more lid-side metal layers, and a region of the one or more lid-side metal layers that is located inside the innermost edge of the one or more base-side metal layers, each absorb the bonding material that protrudes from the region where the one or more base-side metal layers and the one or more lid-side metal layers overlap in the planar view.

2. The light emitting device of claim 1 , wherein the one or more substrate-side metal layers include an inner metal layer and an outer metal layer spaced apart from each other.

3. The light emitting device according to claim 1 , wherein the one or more substrate-side metal layers include an inner metal layer and an outer metal layer that are not spaced apart from each other and are connected via branch portions.

4. a slit portion provided between the inner metal layer and the outer metal layer in the plan view, the joining member is provided on the inner metal layer, The light-emitting device described in claim 2 or 3, wherein, in the planar view, the bonding material that protrudes from the area where the one or more base-side metal layers and the one or more lid-side metal layers overlap is absorbed by the outer metal layer outside the slit portion.

5. The light emitting device according to claim 1 , wherein the one or more lid-side metal layers include a first lid-side metal layer and a second lid-side metal layer that are spaced apart from each other.

6. The light-emitting device described in claim 1, wherein the one or more lid-side metal layers include a first lid-side metal layer that, in the planar view, extends from a position overlapping with the one or more substrate-side metal layers to a position inside the one or more substrate-side metal layers.

7. a ridge portion provided in the one or more lid-side metal layers; The light emitting device according to claim 1 , wherein the first lid-side metal layer has an inner portion and an outer portion that are separated into an inner portion and an outer portion by the ridge portion in the plan view.

8. The light emitting device according to claim 1 , wherein the joining member is solder.

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