Semiconductor manufacturing apparatus and semiconductor manufacturing method

Abstract

To provide a semiconductor manufacturing device and a semiconductor manufacturing method, capable of preventing a film formed on an outer peripheral part of an upper surface of a susceptor from adhering to the upper surface of a substrate.SOLUTION: A semiconductor manufacturing device according to the present disclosure includes a susceptor and a gas inlet located above the susceptor. The susceptor includes a holder part on which a substrate is placed, and a foreign matter collection region provided so as to surround an outer peripheral region of the holder part. The foreign matter collection region has an opening part in which an opening is located at the same level as an uppermost part of the holder part and a collection part located at a lower level than the opening part. An opening width of the opening part is smaller than the opening width of the collection part. Further, the gas introduced from the gas inlet flows through the upper surface of the substrate from a center toward the outer periphery of the substrate and flows into the opening part.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method. [Background technology]

[0002] In a film forming apparatus, a film may be formed not only on the upper surface of a substrate but also on the upper surface of a susceptor. The film formed on the upper surface of the susceptor can cause the substrate to adhere to the susceptor. To solve this problem, Patent Document 1 discloses a technology for forming a susceptor with a double structure. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-121078 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the above method cannot prevent the film from being formed on the outer periphery of the susceptor upper surface, and this film floats around the periphery of the substrate during subsequent film formation processes, eventually adhering to the upper surface of the substrate.

[0005] To solve the above-mentioned problems, the present disclosure provides a semiconductor manufacturing apparatus or a semiconductor manufacturing method that provides a foreign matter collecting area having an opening and a collecting portion in a susceptor, thereby preventing a film formed on the outer periphery of the upper surface of the susceptor from adhering to the upper surface of a substrate. [Means for solving the problem]

[0006] A first aspect of the present disclosure is preferably a semiconductor manufacturing apparatus comprising a susceptor and a gas inlet located above the susceptor, the susceptor having a holder portion on which a substrate is placed and a foreign matter collection area arranged to surround the outer peripheral area of ​​the holder portion, the foreign matter collection area having an opening whose opening is located at the same level as the top of the holder portion and a collection portion located at a lower level than the opening, the opening width of the opening being narrower than the opening width of the collection portion, and gas introduced from the gas inlet flows over the top surface of the substrate from the center of the substrate toward the outer periphery and into the opening.

[0007] Furthermore, a second aspect of the present disclosure is a semiconductor device manufacturing process carried out by a semiconductor manufacturing apparatus including a susceptor and a gas inlet located above the susceptor, wherein the susceptor has a holder portion on which a substrate is placed and a foreign matter collection area arranged to surround the outer peripheral area of ​​the holder portion, the foreign matter collection area having an opening whose opening is located at the same level as the top of the holder portion and a collection portion located at a lower level than the opening, the opening width of the opening being narrower than the opening width of the collection portion, and the semiconductor device manufacturing process preferably includes the steps of: placing the substrate on the holder portion; introducing gas from the gas inlet; and allowing gas that has flowed over the top surface of the substrate from the center toward the periphery of the substrate to flow into the opening, thereby collecting foreign matter in the foreign matter collection area. [Effects of the Invention]

[0008] According to the first and second aspects of the present disclosure, it is possible to prevent a film formed on the outer periphery of the upper surface of a susceptor from adhering to the upper surface of a substrate. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view showing a semiconductor manufacturing apparatus according to a first embodiment of the present disclosure. [Figure 2] 1 is a flowchart showing a manufacturing process of a SiC wafer according to a first embodiment of the present disclosure. [Figure 3] FIG. 2 is a cross-sectional view showing a semiconductor manufacturing apparatus according to a first modified example of the first embodiment of the present disclosure. [Figure 4]FIG. 10 is a cross-sectional view showing a semiconductor manufacturing apparatus according to a second modification of the first embodiment of the present disclosure. [Figure 5] FIG. 10 is a diagram illustrating a semiconductor manufacturing apparatus according to a second embodiment of the present disclosure. [Figure 6] FIG. 10 is a diagram illustrating a reverse tapered portion according to a second embodiment of the present disclosure. [Figure 7] FIG. 10 is a diagram illustrating a semiconductor manufacturing apparatus according to a third embodiment of the present disclosure. [Figure 8] FIG. 11 is a top view showing a first modified example of a susceptor according to a third embodiment of the present disclosure. [Figure 9] FIG. 11 is a top view showing a second modified example of the susceptor according to the third embodiment of the present disclosure. [Figure 10] FIG. 13 is a top view illustrating a third modified example of the susceptor according to the third embodiment of the present disclosure. [Figure 11] FIG. 11 is a top view illustrating a fourth modified example of the susceptor according to the third embodiment of the present disclosure. [Figure 12] FIG. 10 is a diagram illustrating a semiconductor manufacturing apparatus according to a fourth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] Embodiment 1 1 is a cross-sectional view showing a semiconductor manufacturing apparatus according to a first embodiment of the present disclosure. The semiconductor manufacturing apparatus 100 is a substrate processing apparatus. In this embodiment, the semiconductor manufacturing apparatus 100 manufactures SiC wafers to fabricate power devices, for example.

[0011] The semiconductor manufacturing apparatus 100 includes a susceptor 2. The susceptor 2 has a holder portion 22 on which a substrate 4 is placed. In this example, the substrate 4 is an n-type SiC substrate. The holder portion 22 is also provided with a counterbore. By placing the substrate 4 inside the counterbore, the substrate 4 is prevented from shifting position during the growth of an epitaxial layer, which will be described later. The counterbore may have a thickness similar to that of the substrate 4, for example.

[0012] If the substrate 4 has a diameter of 6 inches or more, the warping of the substrate 4 may become significant during the growth of the epitaxial layer described below. For this reason, the bottom surface of the recessed portion described above may be formed into a bowl shape. This shape prevents the center of the substrate 4 from coming into contact with the bottom surface of the recessed portion during the growth of the epitaxial layer, thereby preventing a drop in temperature at the center of the substrate 4. As a result, the film thickness and in-plane uniformity of the carrier concentration of the epitaxial layer can be improved.

[0013] The susceptor 2 also has a foreign matter collecting area 25 provided to surround the outer circumferential area of ​​the holder part 22. The foreign matter collecting area 25 has an opening 24 whose opening is located at the same level as the top of the holder part 22, and a collecting part 26 located at a lower level than the opening 24. The opening 24 has an opening width narrower than that of the collecting part 26, and surrounds the outer circumferential area of ​​the holder part 22. In other words, when viewed in a cross-sectional view, the area of ​​the opening 24 is smaller than that of the collecting part 26.

[0014] The opening width of opening 24 may be determined depending on the film thickness of the foreign matter deposited by semiconductor manufacturing apparatus 100 from the start of film formation until the internal reset. For example, the total integrated film thickness of the epitaxial layer grown by semiconductor manufacturing apparatus 100 from the start of film formation until the internal reset is set to 200 μm. In this case, the film thickness of the foreign matter locally deposited on the outer end of holder part 22 will be approximately 100 μm. Therefore, the opening width of opening 24 is preferably set to 200 to 300 μm, which is larger than the film thickness of the foreign matter.

[0015] The total integrated film thickness may be set to a value sufficient to ensure that the quality of the SiC wafer to be manufactured is at or above a specific level. The specific level may be determined based on, for example, whether the in-plane uniformity of the film thickness and carrier concentration in the epitaxial layer grown by thermal CVD is better than a specific level, and whether the number of crystal defects is lower than a specific level.

[0016] The foreign matter collecting area 25 is formed by removing a part of the susceptor 2. That is, the susceptor 2 is an integrated type, unlike the susceptor 2a described later. As a result, the susceptor 2 does not require the work of attaching a ring cover, which is required for the susceptor 2a described later, and therefore productivity can be improved.

[0017] Furthermore, semiconductor manufacturing apparatus 100 includes gas inlet 6 located above susceptor 2. The introduced gas flows over the upper surface of substrate 4 placed on holder 22 from the center of substrate 4 toward the periphery, and enters opening 24. Foreign matter flows into opening 24 along with this gas flow.

[0018] Furthermore, the collecting section 26 is positioned at a lower level than the substrate 4 placed on the holder section 22. Therefore, foreign matter that has flowed into the opening 24 flows into the collecting section 26 due to gravity.

[0019] The gases introduced through the gas inlet 6 are, for example, source gases and carrier gases such as hydrogen gas. The source gases are raw materials used in growing a single-crystal thin film, such as silicon source gas and carbon source gas. The silicon source gas is, for example, silane gas or chlorosilane gas. The carbon source gas is, for example, propane or methane.

[0020] The effect obtained by providing the foreign matter collecting region 25 on the susceptor 2 will be described. During the growth of an epitaxial layer, the epitaxial layer is formed over the entire upper surface of the susceptor 2. As a result, the epitaxial layer is formed not only on the upper surface of the substrate 4 but also on the outer periphery of the upper surface of the susceptor 2. The epitaxial layer formed on the outer periphery of the upper surface of the susceptor 2 is unnecessary in the process of manufacturing SiC wafers, and will hereinafter be referred to as foreign matter.

[0021] Foreign matter formed on the outer periphery of the upper surface of the susceptor 2 may peel off from the susceptor 2 during the subsequent growth of the epitaxial layer. The peeled foreign matter may float around the periphery of the substrate 4 and eventually adhere to the upper surface of the substrate 4. If foreign matter adheres to the upper surface of the substrate 4, problems such as a decrease in the in-plane uniformity of the film thickness of the epitaxial layer formed on the substrate 4 may arise. For this reason, it was necessary to prevent foreign matter from adhering to the upper surface of the substrate 4.

[0022] In this embodiment, the susceptor 2 is provided with a foreign matter collection area 25. Therefore, the above-mentioned peeled foreign matter flows into the foreign matter collection area 25 due to the gas flow and gravity. As a result, the foreign matter can be prevented from adhering to the upper surface of the substrate 4.

[0023] In this embodiment, the susceptor 2 is provided with the foreign matter collecting region 25, thereby reducing the area of ​​the region corresponding to the outer periphery of the upper surface of the susceptor 2. As a result, the total amount of epitaxial layer formed on the outer periphery of the upper surface of the susceptor 2 can be reduced.

[0024] As described above, in this embodiment, foreign matter that would conventionally form on the periphery of the upper surface of the susceptor 2 accumulates on the bottom surface of the collecting section 26. Now, consider the case where foreign matter floats up from the bottom surface of the collecting section 26 during the subsequent growth of an epitaxial layer. The collecting section 26 is located at a lower level than the upper surface of the susceptor 2. Furthermore, the opening width of the opening 24 is narrower than the opening width of the collecting section 26. Therefore, it becomes difficult for floating foreign matter to reach the periphery of the substrate 4 during the subsequent growth of an epitaxial layer. In other words, it is possible to prevent floating foreign matter from re-adhering to the upper surface of the substrate 4.

[0025] As described above, the susceptor 2 according to this embodiment is provided with the foreign matter collecting area 25. As a result, the film formed on the outer periphery of the upper surface of the susceptor 2 can be prevented from adhering to the upper surface of the substrate 4.

[0026] Furthermore, according to this embodiment, it is possible to prevent foreign matter from adhering to the interior of semiconductor manufacturing apparatus 100. As a result, it is possible to simplify apparatus maintenance performed for internal reset of semiconductor manufacturing apparatus 100. Furthermore, according to this embodiment, it is possible to prevent the film formed on the outer periphery of the upper surface of susceptor 2 from adhering to the upper surface of substrate 4, thereby improving the productivity of SiC wafers.

[0027] 2 is a flowchart showing the manufacturing process of a SiC wafer according to the first embodiment of the present disclosure. First, in step 100, the substrate 4 is mounted on the susceptor 2. As described above, the substrate 4 is mounted on the holder portion 22 of the susceptor 2.

[0028] Next, in step 102, gas is introduced from gas inlet 6. As described above, the gas introduced from gas inlet 6 is, for example, a source gas and a carrier gas such as hydrogen gas. SiC wafers are manufactured using the gas introduced in this step.

[0029] This section describes a specific method for manufacturing SiC wafers. Here, we will show an example of manufacturing SiC wafers using the thermal chemical vapor deposition method. Hereafter, this thermal chemical vapor deposition method will be referred to as the thermal CVD method.

[0030] First, the substrate 4 is placed on the holder 22. Then, the susceptor 2 is rotated, and simultaneously, gas is introduced through the gas inlet 6. At this stage, the temperature conditions and the like within the semiconductor manufacturing apparatus 100 are optimized. As a result, an n-type SiC epitaxial layer having a lower impurity concentration than the substrate 4 is formed on the substrate 4, which is an n-type SiC substrate, by thermal CVD. Hereinafter, this layer will be simply referred to as the epitaxial layer.

[0031] The grown epitaxial layer blocks basal plane dislocations (BPDs) on the SiC wafer, making it easier to control the impurity doping concentration in the SiC wafer obtained by growing the epitaxial layer.

[0032] Next, in step 104, the above-mentioned foreign matter is collected in foreign matter collecting area 25, completing the SiC wafer manufacturing process. As described above, the foreign matter is collected in foreign matter collecting area 25 when the gas introduced from gas inlet 6 flows over the upper surface of substrate 4 from the center of substrate 4 toward the periphery.

[0033] Next, a description will be given of modifications of this embodiment. Figure 3 is a cross-sectional view showing a semiconductor manufacturing apparatus according to a first modification of the first embodiment of the present disclosure. Semiconductor manufacturing apparatus 100a differs from semiconductor manufacturing apparatus 100 in that it includes an upper ring cover 24a and a lower ring cover 26a.

[0034] The semiconductor manufacturing apparatus 100a includes a susceptor 2a. The susceptor 2a has a holder portion 22 on which a substrate 4 is placed. The susceptor 2a also has a foreign matter collecting area 25 that is provided to surround the outer periphery of the holder portion 22. The foreign matter collecting area 25 is composed of an opening 24 and a collecting portion 26.

[0035] A lower ring cover 26a is placed on the susceptor 2a. An upper ring cover 24a is placed on the lower ring cover 26a. The lower ring cover 26a and the upper ring cover 24a are ring-shaped covers provided on the outer periphery of the holder portion 22.

[0036] In this modification, the opening 24 is an area surrounded by the holder part 22 and the upper ring cover 24a, and the collecting part 26 is an area surrounded by the holder part 22 and the lower ring cover 26a. Therefore, in the semiconductor manufacturing apparatus 100a, the opening widths of the opening 24 and the collecting part 26 can be changed as desired by changing the design of the upper ring cover 24a and the lower ring cover 26a depending on the size or amount of foreign matter to be collected.

[0037] 4 is a cross-sectional view showing a semiconductor manufacturing apparatus according to a second modification of the first embodiment of the present disclosure. Semiconductor manufacturing apparatus 100b differs from semiconductor manufacturing apparatus 100 in that it includes a ring cover 25a.

[0038] The semiconductor manufacturing apparatus 100b includes a susceptor 2a. A ring cover 25a is placed on the susceptor 2a. The ring cover 25a is a ring-shaped cover provided on the outer periphery of the holder portion 22. The inner diameter of the top surface of the ring cover 25a is smaller than the inner diameter of the bottom surface.

[0039] In this modification, opening 24 is an area surrounded by holder part 22 and ring cover 25a, and collecting part 26 is an area surrounded by holder part 22 and ring cover 25a. Therefore, in semiconductor manufacturing apparatus 100b, the opening widths of opening 24 and collecting part 26 can be arbitrarily changed by changing the design of ring cover 25a depending on the size or amount of foreign matter to be collected.

[0040] Embodiment 2 5 is a diagram illustrating a semiconductor manufacturing apparatus according to a second embodiment of the present disclosure. The semiconductor manufacturing apparatus 200 differs from the semiconductor manufacturing apparatus 100 in that the foreign matter collecting region 25 has an inverse tapered portion 8 therein.

[0041] The foreign matter collecting area 25 has an inverse tapered portion 8 provided between the opening 24 and the collecting portion 26. If foreign matter accumulated in the collecting portion 26 becomes suspended, it will collide with the inverse tapered portion 8. As a result, it becomes more difficult for the foreign matter to reach the periphery of the substrate 4.

[0042] 6 is a diagram showing a reverse tapered portion according to embodiment 2 of the present disclosure. Reverse tapered portion 8 may have a reverse tapered shape, for example, formed by two inclined portions arranged in a ring shape.

[0043] In this embodiment, the reverse tapered portion 8 is provided at the boundary between the opening 24 and the collecting portion 26, but this is not limiting. For example, the reverse tapered portion 8 may be provided at any height within the opening 24, or may be provided at any height within the collecting portion 26.

[0044] As described above, according to this embodiment, it is possible to prevent the film formed on the outer periphery of the upper surface of the susceptor 2 from adhering to the upper surface of the substrate 4. In particular, according to this embodiment, it is possible to more effectively prevent foreign matter floating from the bottom surface of the foreign matter collecting region 25 during the growth of the epitaxial layer from reaching the periphery of the substrate 4.

[0045] Embodiment 3 7 is a diagram illustrating a semiconductor manufacturing apparatus according to a third embodiment of the present disclosure. Semiconductor manufacturing apparatus 300 differs from semiconductor manufacturing apparatus 100 in that it includes a susceptor 2b having an exhaust port 10.

[0046] The semiconductor manufacturing apparatus 300 includes a susceptor 2b. The susceptor 2b has an exhaust port 10 on the bottom surface of the collecting section 26. The exhaust port 10 creates a local negative pressure in the collecting section 26. Therefore, if foreign matter accumulated in the collecting section 26 becomes suspended, it is more likely to be discharged through the exhaust port 10. As a result, it becomes more difficult for the foreign matter to reach the periphery of the substrate 4.

[0047] 8 is a top view showing a first modified example of a susceptor according to the third embodiment of the present disclosure. The susceptor 2c may have one circular exhaust port 10.

[0048] Here, the diameter of the circular exhaust port 10 is defined as D. The diameter D may be determined depending on the thickness of the foreign matter deposited by the semiconductor manufacturing apparatus 300 from the start of film formation to the internal reset. For example, the diameter D may be a value larger than the thickness of the foreign matter deposited by the semiconductor manufacturing apparatus 300 from the start of film formation to the internal reset.

[0049] A specific example will be given. For example, the total cumulative thickness of the epitaxial layer grown by semiconductor manufacturing equipment 300 from the start of film formation to internal reset is assumed to be 200 μm. In this case, the thickness of the foreign matter locally deposited on the outer end of holder part 22 will be approximately 100 μm. Therefore, it is preferable to set diameter D to 200 to 300 μm, which is a value larger than the thickness of the foreign matter.

[0050] 9 is a top view showing a second modified example of the susceptor according to the third embodiment of the present disclosure. The susceptor 2d may have a plurality of circular exhaust ports 10 each having a diameter D.

[0051] 10 is a top view showing a third modified example of the susceptor according to the third embodiment of the present disclosure. The susceptor 2e may have a C-shaped exhaust port 10.

[0052] 11 is a top view showing a fourth modified example of the susceptor according to the third embodiment of the present disclosure. The susceptor 2f may have a plurality of rectangular exhaust ports 10.

[0053] Here, consider the length d of one side of the rectangular exhaust port 10. The length d may be determined depending on the thickness of the foreign matter deposited by the semiconductor manufacturing equipment 300 from the start of film formation to the internal reset. For example, the length d may be a value greater than the thickness of the foreign matter deposited by the semiconductor manufacturing equipment 300 from the start of film formation to the internal reset.

[0054] A specific example will be given. For example, the total cumulative thickness of the epitaxial layer grown by semiconductor manufacturing equipment 300 from the start of film formation to internal reset is assumed to be 200 μm. In this case, the thickness of the foreign matter locally deposited on the outer end of holder part 22 will be approximately 100 μm. Therefore, it is preferable to set length d to 200 to 300 μm, which is a value greater than the thickness of the foreign matter.

[0055] As described above, according to this embodiment, it is possible to prevent the film formed on the outer periphery of the upper surface of each susceptor from adhering to the upper surface of the substrate 4. In particular, according to this embodiment, the effect of the exhaust port 10 can more effectively prevent foreign matter floating during the growth of the epitaxial layer from reaching the periphery of the substrate 4.

[0056] Embodiment 4 12 is a diagram illustrating a semiconductor manufacturing apparatus according to a fourth embodiment of the present disclosure. Semiconductor manufacturing apparatus 400 differs from semiconductor manufacturing apparatus 300 in that it includes a susceptor 2g having a high outer wall.

[0057] The semiconductor manufacturing apparatus 400 includes a susceptor 2g. The susceptor 2g has an outer wall that extends to a position higher than the surface of the holder part 22 on which the substrate 4 is placed. In other words, the foreign matter collection area 25 is an area surrounded by the holder part 22 and the outer wall.

[0058] When foreign matter flows into the foreign matter collecting area 25 due to the inflow of gas, the foreign matter collides with this outer wall. As a result, the foreign matter is more likely to flow into the foreign matter collecting area 25.

[0059] As described above, according to this embodiment, it is possible to prevent the film formed on the outer periphery of the upper surface of the susceptor 2g from adhering to the upper surface of the substrate 4. In particular, according to this embodiment, it is possible to more effectively prevent foreign matter floating during the growth of the epitaxial layer from reaching the periphery of the substrate 4.

[0060] Below, the aspects of the present disclosure will be summarized as appendices.

[0061] (Appendix 1) a susceptor and a gas inlet located above the susceptor; the susceptor has a holder portion on which a substrate is placed and a foreign matter collecting area provided so as to surround an outer peripheral area of ​​the holder portion; the foreign matter collecting area has an opening that is positioned at the same level as the top of the holder part, and a collecting part that is positioned at a lower level than the opening, The opening width of the opening is narrower than the opening width of the collecting part, The semiconductor manufacturing apparatus has a structure in which the gas introduced from the gas inlet flows over the upper surface of the substrate from the center toward the periphery of the substrate and enters the opening. (Appendix 2) 2. The semiconductor manufacturing apparatus according to claim 1, wherein the foreign matter collecting region has an inverted tapered portion provided between the opening and the collecting portion. (Appendix 3) The susceptor has an exhaust port on the bottom surface of the collection section. 3. The semiconductor manufacturing apparatus according to claim 1 or 2. (Appendix 4) The exhaust port is a circle with a diameter of 200 to 300 μm. 4. The semiconductor manufacturing apparatus according to claim 3. (Appendix 5) 4. The semiconductor manufacturing apparatus according to claim 3, wherein the exhaust port is C-shaped. (Appendix 6) The exhaust port is a rectangle with each side measuring 200 to 300 μm. 4. The semiconductor manufacturing apparatus according to claim 3. (Appendix 7) 7. The semiconductor manufacturing apparatus according to claim 3, wherein the exhaust port is plural. (Appendix 8) The susceptor has an outer wall that extends to a position higher than a surface of the holder portion on which the substrate is placed. 8. A semiconductor manufacturing apparatus according to any one of claims 1 to 7. (Appendix 9) The opening width of the opening is 200 to 300 μm. 9. A semiconductor manufacturing apparatus according to any one of claims 1 to 8. (Appendix 10) the susceptor further includes an upper ring cover and a lower ring cover, which are ring-shaped covers provided on an outer periphery of the holder portion; the opening is an area surrounded by the holder portion and the upper ring cover, The collecting section is an area surrounded by the holder section and the lower ring cover. 10. A semiconductor manufacturing apparatus according to any one of claims 1 to 9. (Appendix 11) the susceptor further includes a ring cover provided on an outer periphery of the holder portion, the foreign matter collecting area is an area surrounded by the holder portion and the ring cover, The ring cover is a ring-shaped cover whose inner diameter on the top side is smaller than that on the bottom side. 10. A semiconductor manufacturing apparatus according to any one of claims 1 to 9. (Appendix 12) A manufacturing process of a semiconductor device carried out by a semiconductor manufacturing apparatus including a susceptor and a gas inlet located above the susceptor, the susceptor has a holder portion on which a substrate is placed and a foreign matter collecting area provided so as to surround an outer peripheral area of ​​the holder portion, the foreign matter collecting area has an opening that is positioned at the same level as the top of the holder part, and a collecting part that is positioned at a lower level than the opening, The opening width of the opening is narrower than the opening width of the collecting part, placing the substrate on the holder portion; introducing a gas through the gas inlet; causing the gas that has flowed over the upper surface of the substrate from the center toward the periphery of the substrate to flow into the opening, thereby collecting foreign matter in the foreign matter collecting region; A manufacturing process of a semiconductor device comprising: [Explanation of symbols]

[0062] 2 susceptor 2a Susceptor 2b Susceptor 2c Susceptor 2d susceptor 2e Susceptor 2f susceptor 2g susceptor 4 boards 6 Gas inlet 8 Reverse tapered section 10 exhaust port 22 Holder part 24 Opening 24a Upper ring cover 25 Foreign body collection area 25a ring cover 26 Collection Department 26a Lower ring cover 100 Semiconductor manufacturing equipment 100a Semiconductor manufacturing equipment 100b Semiconductor manufacturing equipment 200 Semiconductor manufacturing equipment 300 Semiconductor manufacturing equipment 400 Semiconductor manufacturing equipment

Claims

1. a susceptor and a gas inlet located above the susceptor; the susceptor has a holder portion on which a substrate is placed and a foreign matter collecting area provided so as to surround an outer peripheral area of ​​the holder portion; the foreign matter collecting area has an opening that is positioned at the same level as the top of the holder part, and a collecting part that is positioned at a lower level than the opening, The opening width of the opening is narrower than the opening width of the collecting part, The semiconductor manufacturing apparatus has a structure in which the gas introduced from the gas inlet flows over the upper surface of the substrate from the center toward the periphery of the substrate and enters the opening.

2. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the foreign matter collecting region has an inverse tapered portion provided between the opening and the collecting portion.

3. The susceptor has an exhaust port on the bottom surface of the collection section. The semiconductor manufacturing apparatus according to claim 1 .

4. The exhaust port is a circle with a diameter of 200 to 300 μm. The semiconductor manufacturing apparatus according to claim 3 .

5. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the exhaust port is C-shaped.

6. The exhaust port is a rectangle with each side measuring 200 to 300 μm. The semiconductor manufacturing apparatus according to claim 3 .

7. 7. The semiconductor manufacturing apparatus according to claim 3, wherein the number of the exhaust ports is plural.

8. The susceptor has an outer wall that extends to a position higher than a surface of the holder portion on which the substrate is placed. The semiconductor manufacturing apparatus according to claim 1 .

9. The opening width of the opening is 200 to 300 μm. The semiconductor manufacturing apparatus according to claim 1 .

10. the susceptor further includes an upper ring cover and a lower ring cover, which are ring-shaped covers provided on an outer periphery of the holder portion; the opening is an area surrounded by the holder portion and the upper ring cover, The collecting section is an area surrounded by the holder section and the lower ring cover. The semiconductor manufacturing apparatus according to claim 1 .

11. the susceptor further includes a ring cover provided on an outer periphery of the holder portion, the foreign matter collecting area is an area surrounded by the holder portion and the ring cover, The ring cover is a ring-shaped cover whose inner diameter on the top side is smaller than that on the bottom side. The semiconductor manufacturing apparatus according to claim 1 .

12. A manufacturing process of a semiconductor device carried out by a semiconductor manufacturing apparatus including a susceptor and a gas inlet located above the susceptor, the susceptor has a holder portion on which a substrate is placed and a foreign matter collecting area provided so as to surround an outer peripheral area of ​​the holder portion, the foreign matter collecting area has an opening that is positioned at the same level as the top of the holder part, and a collecting part that is positioned at a lower level than the opening, The opening width of the opening is narrower than the opening width of the collecting part, placing the substrate on the holder portion; introducing a gas through the gas inlet; causing the gas that has flowed over the upper surface of the substrate from the center toward the periphery of the substrate to flow into the opening, thereby collecting foreign matter in the foreign matter collecting region; A semiconductor manufacturing method comprising:

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