Plasma shaper controls ion flux distribution in plasma source

Abstract

Provided herein is an approach to obtain a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss due to etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma in a plasma chamber enclosed by a chamber housing, the plasma source including a plasma shaper extending from a wall of the chamber housing into the plasma chamber. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing and a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward the wall of the chamber housing.

Description

[Technical field]

[0001]

[0001] The present disclosure relates generally to techniques for manufacturing electronic devices, and more particularly to the use of plasma shapers to control ion flux distribution in a plasma source. [Background technology]

[0002]

[0002] Charged particle processing of substrates is used in a variety of applications. One particular application is ion beam etching of substrates having features that require extreme critical dimension uniformity and symmetry. In such processes, the substrate may be positioned at one or more angles relative to the beam. In some applications, to improve the uniformity of the substrate processing, the substrate may need to be held statically at one or more fixed angles, or may be moved (e.g., tilted and / or rotated) in front of the beam during one substrate processing cycle.

[0003]

[0003] The shrinking critical dimensions of thin film devices drive the need for better control of process uniformity and beam collimation. At the same time, shrinking device sizes demand better control of device critical dimensions, which are functions of the ion bombardment process, such as the average wall angle of the etched structures. As a result, high process uniformity (e.g., etch depth) is desired, and uniformity is directly related to particle flux, i.e., beam current density.

[0004]

[0004] Thus, there is a need for a charged particle source for processing substrates that reduces the angular dispersion of the charged particles across a large substrate while maintaining high uniformity across the substrate at any angle relative to the beam. There is also a need for a charged particle source that is "tunable" to compensate for variations due to component tolerances as well as changes in the performance of the charged particle source over time.

[0005]

[0005] It is with respect to these and other considerations that the present disclosure is provided. Summary of the Invention

[0006]

[0006] This Summary is provided to introduce some concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended as an aid in determining the scope of the claimed subject matter.

[0007] In one embodiment, the system may include a plasma source operable to generate a plasma in a plasma chamber enclosed by a chamber housing, the plasma source being a radio frequency inductively coupled plasma source and including a plasma shaper extending from a wall of the chamber housing into the plasma chamber. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing and a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward the wall of the chamber housing.

[0008] In another embodiment, an ion beam processing system may include a plasma source operable to generate a plasma in a chamber housing, the plasma source being a radio frequency inductively coupled plasma source, and a pull-out power assembly including a high voltage power supply electrically coupled to the chamber housing. The plasma source may include a plasma shaper extending from a wall of the chamber housing into the plasma chamber, the plasma shaper including a shaper wall coupled to the wall of the chamber housing and a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward a wall of the chamber.

[0009] In yet another embodiment, a gas distributor for a plasma chamber may include a gas inlet and a plasma shaper adjacent the gas inlet, the plasma shaper extending into the plasma chamber. The plasma shaper may include a curved shaper end wall having an apex that extends toward a wall of the chamber housing.

[0010]

[0010] By way of example only, embodiments of the present disclosure will now be described with reference to the accompanying drawings, in which: [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic diagram of a system according to an embodiment of the present disclosure. [Figure 2A] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. [Figure 2B] FIG. 2B illustrates a plasma profile of the ion source of FIG. 2A in accordance with an embodiment of the present disclosure. [Figure 2C] FIG. 2B illustrates a plasma profile of the ion source of FIG. 2A in accordance with an embodiment of the present disclosure. [Figure 3A] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. [Figure 3B] FIG. 3B illustrates a plasma profile of the ion source of FIG. 3A in accordance with an embodiment of the present disclosure. [Figure 3C] FIG. 3B illustrates a plasma profile of the ion source of FIG. 3A in accordance with an embodiment of the present disclosure. [Figure 4] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. [Diagram 5] FIG. 2 is a side cross-sectional view of an ion source according to an embodiment of the present disclosure. [Figure 6] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. [Figure 7A] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. [Figure 7B] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. [Figure 8] FIG. 2 is a cross-sectional side view of an ion source according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012]

[0022] The drawings are not necessarily to scale. The drawings are merely representational and are not intended to depict specific parameters of the present disclosure. The drawings are intended to depict exemplary embodiments of the present disclosure and therefore should not be considered limiting in scope. In the drawings, like numbering represents like elements.

[0013]

[0023] Additionally, certain elements in some of the drawings may be omitted or may be drawn out of scale for illustrative clarity. The cross-sectional views may be in the form of "slices," or "myopic" cross-sectional views that omit certain background lines that would otherwise be visible in a "true" cross-sectional view for illustrative clarity. Additionally, some reference numbers may be omitted in certain drawings for clarity.

[0014]

[0024] A plasma source and ion beam surface modification system according to the present disclosure will now be described more fully with reference to the accompanying drawings, in which embodiments of the present disclosure are shown. The plasma source and ion beam surface modification system may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the systems and methods to those skilled in the art.

[0015]

[0025] In view of the above-mentioned deficiencies identified in the prior art, the present specification provides an approach for generating a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss due to etch profile variations across the wafer. In some embodiments, a plasma shaper is provided in the chamber of the plasma source to form, for example, a donut-shaped (concave in the center) plasma profile. As a result, the ion flux signature at the wafer or extraction grid of the ion beam source may invert from a center peak to an edge peak. In some embodiments, the plasma shaper is movable within the chamber in at least a first direction to adjust the plasma uniformity.

[0016]

[0026] Reference is now made to Figure 1, which illustrates an exemplary ion beam surface modification system (hereinafter "system") 100 according to the present disclosure. System 100 may be an etching system including a plasma source 102 having a chamber housing 104 defining a plasma chamber 106 for generating plasma therein. In some embodiments, system 100 may be a radio frequency (RF) inductively coupled plasma (ICP) ion beam processing system mountable to a high vacuum substrate processing chamber 111 containing a wafer support 118 and a wafer 120 for processing (e.g., etching).

[0017]

[0027] As shown, the plasma chamber 106 may be separated from the process chamber 111 by a grid assembly 113. When the grid assembly 113 is used for ion beam processing of the wafer 106, energetic ions may be drawn from the grid assembly 113 by charging the plasma to a positive potential with respect to the process chamber ground through contact with a positively charged electrode, such as the grid member 116, which is connected to a high voltage power supply. In other embodiments, the high voltage power supply may be connected to any size electrode in contact with the plasma, such as a plasma shaper 125 that extends into the plasma chamber 106. In either case, the plasma potential is always more positive than the positive electrode.

[0018]

[0028] Additionally, the second grid member 114, negatively charged with respect to ground, can facilitate ion current extraction and inhibit electron intrusion from the process chamber into the plasma chamber. A third grid member 112, which can be electrically grounded with respect to the process chamber ground, can also be included to reduce ion beamlet divergence in some operating conditions. Of the three grid members, the ground grid member 112 can be positioned closest to the wafer 120 during etching of the wafer, and the negative grid member 114 can be positioned between the ground grid member 112 and the positive grid member 116. Without limitation, the ground grid 112 can be thicker than the negative grid member 114 and the positive grid member 116 to enhance the structural robustness / rigidity of the grid assembly 113. Additionally, the spacing between the grid members of the grid assembly 113 can be optimized for the desired etch uniformity and etch rate. In other embodiments, the grid assembly can include only two grids, for example, positive and negative with respect to the process chamber ground, or can have three or more grids, but none of the grids are electrically grounded. The embodiments herein are not limited in this context.

[0019]

[0029] The plasma source 102 may further include a plasma generator 121 including a power source 122 electrically coupled to the chamber housing 104 by, for example, a number of radio frequency coils (hereinafter, "coils") 124 operable to excite gases in the plasma chamber 106 to generate ions (or charged particles). The gases may be supplied from a gas storage vessel 128 via a flow regulator, for example, a mass flow controller. In an embodiment, the plasma is generated by application of RF power (e.g., on the order of about kilowatts, at a frequency range of about 0.5 to 15 MHz) from the power source 122, and the RF current circulating in the coils 124 generates an axial magnetic field that is transferred to the plasma through a "window" along the sidewall 105 of the chamber housing 104. In other embodiments, the plasma may be generated in other ways, such as a filament, a capacitively coupled plasma (CCP) source, an indirectly heated cathode (IHC or another plasma source), etc. In one example, the ion source 102 may be an IHC and the power source 134 is a DC power source. However, the manner in which the plasma is generated is not limited by this disclosure.

[0020]

[0030] In various embodiments, different species may be used in the supply gas from the gas storage vessel 128. Examples may include atomic or molecular species including boron (B), carbon (C), oxygen (O), helium (He), neon (Ne), argon (Ar), krypton (Kr), nitrogen (N), hydrogen (H), fluorine (F), and chlorine (Cl). Those skilled in the art will recognize that the above list of species is non-limiting and other atomic or molecular species may also be used. Depending on one or more applications, these species may be used as etchants, dopants, or additional materials. In particular, a species used as an etchant in one application may be used as an additional material in another application, or vice versa.

[0021]

[0031] As further shown, the system 100 may include a plasma shaper 125 extending into the plasma chamber 106 from a wall 126 of the chamber housing 104. In some embodiments, the wall 126 may be opposite the grid assembly 113. As described in more detail herein, the plasma shaper 125 may be a cylindrical and / or disk-shaped component operable to improve the uniformity of the plasma ion flux. Although only a single plasma shaper 125 is shown, it will be understood that multiple plasma shapers may be possible. Additionally, one or more plasma shapers 125 may extend from a sidewall 105 of the plasma housing 104.

[0022]

[0032] Please refer to FIG. 2A, which illustrates a plasma source 202 according to an embodiment of the present disclosure. As shown, the plasma source 202 may include a chamber housing 204 that defines a plasma chamber 206, the chamber housing 204 including a side wall 205 connected to an end wall 226. At an end of the side wall 205 opposite the end wall 226 is a grid assembly 213. The plasma shaper 225 may extend into the plasma chamber 206 from the end wall 226 of the chamber housing 204. As shown, the plasma shaper 225 may include a shaper wall 230 coupled to the end wall 226 of the chamber housing 204. The plasma shaper 225 may further include a shaper end wall 232 connected to or integrally formed with the shaper wall 230. Without limitation, the plasma shaper 225 may be a generally cylindrical component that extends toward the grid assembly 213.

[0023]

[0033] In the illustrated embodiment, the plasma shaper 225 may extend a first distance "D1" into the plasma chamber 206. As illustrated, D1 may be greater than "D2", which is the distance between the end wall 226 of the chamber housing 204 and the lowermost coil 224L (in the orientation of FIG. 2A) of the plurality of coils 224. Without being limited to any particular size or configuration, D1 of the plasma shaper 225 may be approximately twice the radius of the plasma shaper 225. By positioning the shaper end wall 232 closer to the grid assembly 213 than the end wall 226 of the plasma housing 204, a donut-shaped plasma profile may be generated. For example, as shown in the side view of FIG. 2B and the end view of FIG. 2C, the plasma profile 235 may exhibit a higher density in a region 242 between an outer surface 238 of the plasma shaper 225 and an inner surface 240 of the side wall 205 of the chamber housing 204. Region 242 is below or surrounded by coil 224. As a result, the ion flux signature in grid 213 is greater at the edges than in the center. In some embodiments, D1 of plasma shaper 225 can be altered to change the plasma density.

[0024]

[0034] 2A, the plasma source 202 may include one or more gas inlets operable to deliver a feed gas into the plasma chamber 206. In some embodiments, a first gas inlet 248 may extend through the chamber housing 204, such as through the end wall 226. Additionally or alternatively, a second gas inlet 250 may extend through the plasma shaper 225. However, embodiments herein are not limited in this context.

[0025]

[0035] 3A-3C illustrate another plasma source 302 according to an embodiment of the present disclosure. As shown, the plasma source 302 may include a chamber housing 304 that defines a plasma chamber 306, the chamber housing 304 including a sidewall 305 connected to an end wall 326. At an end of the sidewall 305 opposite the end wall 326 is a grid assembly 313. The plasma source 302 may include a number of coils 324 that extend around the exterior of the sidewall 305.

[0026]

[0036] A plasma shaper 325 may extend into the plasma chamber 306 from an end wall 326 of the chamber housing 304. As shown, the plasma shaper 325 may include a shaper wall 330 coupled to the end wall 326 of the chamber housing 304. The plasma shaper 325 may further include a shaper end wall 332 connected to or integrally formed with the shaper wall 330. In some embodiments, the shaper wall 330 is a cylindrical shaft and the shaper end wall 326 is a disk-shaped flange. As shown, the flange may be generally wider than the cylindrical shaft. That is, the flange may be closer to the side wall 305 of the chamber housing 304 than the cylindrical shaft is closer to the side wall 305.

[0027]

[0037] 3B-3C, the plasma profile 335 may exhibit a higher density in a region 342 between an outer surface 338 of the plasma shaper 325 and an inner surface 340 of the sidewall 305 of the chamber housing 304. The region 342 is generally below or surrounded by the coil 324 (FIG. 3A). The disk-shaped plasma shaper 325 in this embodiment allows for a larger plasma region where the plasma density peaks away from the grid assembly 313. Additionally, less material is exposed to back sputtering from the process chamber.

[0028]

[0038] 4 illustrates another plasma source 402 according to an embodiment of the present disclosure. As shown, the plasma source 402 may include a chamber housing 404 that defines a plasma chamber 406, the chamber housing 404 including a sidewall 405 connected to an end wall 426. At an end of the sidewall 405 opposite the end wall 426 is a grid assembly 413. The plasma source 402 may include a number of coils 424 that extend around the exterior of the sidewall 405.

[0029]

[0039] The plasma shaper 425 may extend into the plasma chamber 406 from an end wall 426 of the chamber housing 404. As shown, the plasma shaper 425 may include a shaper wall 430 coupled to the end wall 426 of the chamber housing 404. The plasma shaper 425 may further include a shaper end wall 432 connected to or integrally formed with the shaper wall 430. As shown, the shaper end wall 432 may have a protrusion or tip 437 or include a recess, recess, or cavity 436 that extends away from the grid assembly 413 toward the end wall 426 of the chamber housing 404. Without limitation, the shaper end wall 432 may include a set of horizontal elements 441 connected to a set of inner vertical elements 442, which may extend generally perpendicular to the set of inner vertical elements 442. Although a pair of vertical elements 441 are illustrated as extending parallel to one another, embodiments herein are not limited in this context. The cavity 436 may be cylindrical in some embodiments. In other embodiments, the cavity 436 may take on virtually any shape or profile.

[0030]

[0040] The horizontal element 441 of the shaper end wall 432 may extend a first distance "D1" from the end wall 426 into the plasma chamber 406, and the tip 437 defining the cavity 436 may extend a second distance "D2" from the end wall 426. As shown, D2 may be greater than "D3", which is the distance between the end wall 426 and the uppermost (in the orientation of FIG. 4) coil 424U of the plurality of coils 424. Meanwhile, D2 may be less than "D4", which is the distance between the end wall 426 and the lowermost coil 424L of the plurality of coils 424. As a result, the cavity 436 may be at least partially surrounded by the plurality of coils 424. It will be understood that D1-D4 are variable. By providing a central cavity 436 in the plasma shaper 425, the central dip in plasma density in the plasma chamber 406, as described with reference to FIG. 2 for the shaper end wall close to the grid assembly 213, may be locally reduced in the core center region as desired, while still maintaining a higher plasma density at the edges, resulting in an overall more uniform ion flux distribution at the grid.

[0031]

[0041] 5 illustrates another plasma source 502 according to an embodiment of the present disclosure. The plasma shaper 525 may extend into the plasma chamber 506 from an end wall 526 of the chamber housing 504. As shown, the plasma shaper 525 may include a shaper wall 530 coupled to the end wall 526 of the chamber housing 504. The plasma shaper 525 may further include a shaper end wall 532 connected to or integrally formed with the shaper wall 530. As shown, the shaper end wall 532 may include a recess, recess, or cavity 536 having an apex or tip 537 that extends toward the end wall 526 of the chamber housing 504. Without limitation, the shaper end wall 532 may have a hemispherical / semicircular profile.

[0032]

[0042] The shaper wall 530 may extend a first distance "D1" from the end wall 526 into the plasma chamber 506, and a tip 537 of the shaper end wall 532 may be positioned a second distance "D2" from the end wall 526. As shown, D2 may be greater than "D3", which is the distance between the end wall 526 and the topmost (in the orientation of FIG. 5) coil 524U of the plurality of coils 524. Meanwhile, D2 may be less than "D4", which is the distance between the end wall 526 and the bottommost coil 524L of the plurality of coils 524. As a result, the cavity 536 may be at least partially surrounded by the plurality of coils 524. It will be appreciated that D1-D4 are variable. For example, D2 may be less than D3 such that the tip 537 extends above the topmost coil 524U. Alternatively, D2 may be greater than D4 such that the tip 537 is below the bottommost coil 524L. Additionally, the depth "D5" of the cavity 536 can be varied as desired. As shown, D5 may be generally equal to D1 minus D2. By providing a central cavity 536 in the plasma shaper 525, the ion flux toward the center of the plasma chamber 506 may be increased.

[0033]

[0043] As further shown, the plasma source 502 may include a first shaper ring 557 that extends circumferentially around an exterior 558 of a shaper wall 530 of the plasma shaper 525. In some embodiments, the first shaper ring 557 may be positioned proximate a first end 559 of the shaper wall 530. In other embodiments, the first shaper ring 557 may be positioned proximate a second end 560 of the shaper wall 530. As shown, the first end 559 of the shaper wall 530 is adjacent to the end wall 526 of the plasma housing 504, while the second end 560 of the shaper wall 530 is adjacent to the grid assembly 513. It will be appreciated that more than one shaper ring 557 may be present around the shaper wall 530.

[0034]

[0044] In some embodiments, the plasma source 502 may further include a second shaper ring 562 extending around the inner surface 564 of the chamber housing 504. Similar to the first shaper ring 557, the position of the second shaper ring 562 along the inner surface 564 may be varied as desired to further affect the ion flux profile within the plasma chamber 506. Two or more shaper rings 562 may be present along the inner surface 564. In some embodiments, one or more shaper rings may be located along the outer surface 568 of the chamber housing 504. It will be appreciated that the first and / or second shaper rings 557, 562 may be present in any of the plasma sources described herein (e.g., 102, 202, 302, 402).

[0035]

[0045] 6 illustrates another plasma source 602 according to an embodiment of the present disclosure. A plasma shaper 625 may extend into the plasma chamber 606 from an end wall 626 of the chamber housing 604. As shown, the plasma shaper 625 may include a shaper wall 630 and a shaper end wall 632 connected to or integrally formed with the shaper wall 630. As shown, the shaper end wall 632 may include a recess, recess, or cavity 636 having a tip 637 that extends toward the end wall 626 of the chamber housing 604. Without limitation, the shaper end wall 632 may have a hemispherical / semicircular profile.

[0036]

[0046] As shown, the plasma shaper 625 may further include a second shaper wall 638 coupled to or extending through the shaper end wall 632. A disk-shaped flange 642 connected to the second shaper wall 638 may be located within the cavity 636. The end of the flange 642 may also be concave or convex rather than disk-shaped. It will be appreciated that the dimensions and / or distances of the components of the plasma shaper 625 relative to one another may be altered to affect the plasma profile within the plasma chamber 606. Additionally, in some embodiments, the flange 642 may be movable relative to the shaper end wall 632 to change the plasma profile from center-focused to edge-peaked.

[0037]

[0047] Although not shown, cusp magnets or electromagnets can be combined with any of the plasma sources described herein to improve the uniformity of the plasma ion flux. For example, cusp magnets can be positioned around the outside of the chamber housing to add an outer magnetic field that improves uniformity. More specifically, the axial cusp magnetic field created by the cusp magnets can reduce edge losses, thereby improving uniformity.

[0038]

[0048] 7A-7B, in which a plasma source 702 according to an embodiment of the present disclosure is depicted. As shown, the plasma source 702 may include a chamber housing 704 defining a plasma chamber 706, the chamber housing 704 including a sidewall 705 connected to an end wall 726. The plasma source 702 may include a gas distributor 733 including a gas inlet 737 and a plasma shaper 725, the plasma shaper 725 extending from the end wall 726 of the chamber housing 704 into the plasma chamber 706. As shown, the plasma shaper 725 may include a curved shaper end wall 732 having a tip or apex 741 extending toward the grid assembly 713.

[0039]

[0049] In use, the gas distributor 733 is operable to deliver a feed gas 751 into the plasma chamber 706. In the embodiment of Figure 7A, the feed gas 751 is delivered between the curved shaper end wall 732 and the end wall 726 in an initial direction substantially parallel to the end wall 726. In the embodiment of Figure 7B, the feed gas 751 is delivered through one or more conduits in the curved shaper end wall 732 of the plasma shaper 725. It will be appreciated that the location and number of conduits can be varied to affect the feed gas distribution within the plasma chamber 706, and therefore the plasma density.

[0040]

[0050] 8 illustrates another plasma source 802 according to an embodiment of the present disclosure. As shown, the plasma source 802 may include a chamber housing 804 defining a plasma chamber 806, the chamber housing 804 including a sidewall 805 connected to an end wall 826. At an end of the sidewall 805 opposite the end wall 826 is a grid assembly 813. A number of coils 824 may extend around the sidewall 805. Although not shown, the plasma source 802 may include one or more gas inlets operable to deliver a feed gas into the plasma chamber 806.

[0041]

[0051] As further shown, the plasma source 806 may have a height "H" and a width "W". In some embodiments, height / diameter aspect ratios of 0.4 or less begin to show advantages not observed in more typical aspect ratio ranges, e.g., 1-2. Furthermore, it has been observed by the inventors that a donut-shaped plasma density distribution can be achieved with an aspect ratio of 0.2. In some non-limiting examples, the peak flux is approximately 1.67 mm for a height dimension of 200 mm. * 10 20 1 / m 2 / s, which is about 1.28 for a height dimension of 100 mm. * 10 20 1 / m 2 / s. The plasma uniformity profile can change to a donut shape at bowl heights of about 100 mm.

[0042]

[0052] The foregoing description has been presented for purposes of illustration and description, and is not intended to limit the disclosure to the form or forms disclosed herein. For example, various features of the disclosure may be grouped together in one or more aspects, embodiments, or configurations for the purpose of streamlining the disclosure. However, it should be understood that various features of a particular aspect, embodiment, or configuration of the disclosure may be combined in alternative aspects, embodiments, or configurations. Moreover, the following claims are hereby incorporated by reference into the Detailed Description of the Invention, with each claim standing on its own as a separate embodiment of the disclosure.

[0043]

[0053] As used herein, elements or steps referred to in the singular and preceded by the word "a" or "an" should be understood as not excluding a plurality of elements or steps, unless the exclusion is expressly stated. Furthermore, references to "one embodiment" of the present disclosure are not intended to be interpreted as excluding the existence of additional embodiments that incorporate the recited features.

[0044]

[0054] The use of "including," "comprising," or "having" and variations thereof herein is intended to encompass the items listed thereafter and equivalents thereof as well as additional items. Thus, the terms "including," "comprising," or "having" and variations thereof are open-ended and may be used interchangeably herein.

[0045]

[0055] All directional references (e.g., proximal, distal, upper, lower, upward, downward, left, right, transverse, longitudinal, front, rear, top, bottom, up, down, vertical, horizontal, radial, axial, clockwise, and counterclockwise) are used for identification purposes only to aid the reader in understanding this disclosure and are not intended to create limitations on the location, orientation, or use of the disclosure in any particular way. Connection references (e.g., attach, couple, connect, and join) should be interpreted broadly and may include intermediate members between collections of elements and relative movement between the elements unless specifically indicated otherwise. Thus, connection references do not necessarily imply that two elements are directly connected and in a fixed relationship to each other.

[0046]

[0056] Further, distinguishing references (e.g., primary, secondary, first, second, third, fourth, etc.) do not imply importance or priority, but are used to distinguish one feature from another. The drawings are for illustrative purposes only, and the dimensions, positions, order and relative sizes reflected in the drawings accompanying this specification may vary.

[0047]

[0057] Furthermore, the terms "substantial" or "substantially" and "approximately" or "about" can be used interchangeably in some embodiments and can be described using any relative measure accepted by those of skill in the art. For example, these terms can serve as a comparison to a reference parameter to indicate a deviation that can provide a given function. Without being limiting, the deviation from the reference parameter can be, for example, an amount of less than 1%, less than 3%, less than 5%, less than 10%, less than 15%, less than 20%, etc.

[0048]

[0058] Although specific embodiments of the present disclosure have been described herein, the present disclosure is not limited thereto, but is as broad as the art allows, and the present specification can be read as such. Therefore, the above description should not be interpreted as limiting. Those skilled in the art will envision other modifications within the scope and spirit of the claims appended hereto.

Claims

1. 1. A system comprising:

1. A plasma source operable to generate a plasma in a plasma chamber enclosed by a chamber housing, the plasma source including a plasma shaper extending from a wall of the chamber housing into the plasma chamber, the plasma source being a radio frequency inductively coupled plasma source, the plasma shaper comprising: a shaper wall coupled to a wall of the chamber housing; a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward a wall of the chamber housing; A plasma source comprising: A system comprising:

2. The system of claim 1 , further comprising a plurality of coils extending around the chamber housing.

3. 3. The system of claim 2, wherein the system further comprises a processing chamber operable to house a wafer, and a grid assembly of the plasma source separates the plasma chamber from the processing chamber.

4. The system of claim 1 , wherein the shaper end wall includes a flange extending away from the shaper wall.

5. The system of claim 1 , further comprising a gas inlet extending through a wall of the chamber housing or the plasma shaper.

6. The plasma shaper further comprises: a shaft within the shaper wall; a flange extending from the shaft; The system of claim 1 , comprising:

7. The system of claim 1 , wherein the recess comprises a cylindrical recess or a hemispherical recess.

8. The system of claim 1 , wherein the chamber housing has a height dimension and a radial dimension, and an aspect ratio of the height dimension to the radial dimension is less than or equal to 0.

4.

9. The system of claim 1 , wherein the plasma source further comprises a first shaper ring extending around an outer periphery of a shaper wall of the plasma shaper.

10. 10. The system of claim 9, wherein the plasma source further comprises a second shaper ring extending around an inner surface of the chamber housing.

11. 1. An ion beam processing system comprising: a plasma source operable to generate a plasma within the chamber housing, the plasma source being a radio frequency inductively coupled plasma source; a pull-out power supply assembly including a high voltage power supply electrically coupled to the chamber housing, the plasma source including a plasma shaper extending from a wall of the chamber housing into a plasma chamber, the plasma shaper comprising: a shaper wall coupled to a wall of the chamber housing; a shaper end wall connected to the shaper wall, the shaper end wall defining a recess extending toward a wall of the chamber; a drawer power assembly including: An ion beam processing system comprising:

12. The ion beam processing system of claim 11 , wherein the plasma source further comprises a plurality of coils extending around the chamber housing.

13. The ion beam processing system of claim 11 , wherein the recess comprises a cylindrical recess or a hemispherical recess, and an end of the cylindrical recess or the hemispherical recess is surrounded by a plurality of coils.

14. The ion beam processing system of claim 11 , further comprising a gas inlet extending through a wall of the chamber housing or the plasma shaper.

15. The plasma shaper further comprises: a shaft within the shaper wall; a flange extending from the shaft; The ion beam processing system of claim 11 , comprising:

16. The ion beam processing system of claim 11 , wherein the plasma source further comprises a shaper ring extending around an outer periphery of a shaper wall of the plasma shaper or around an inner surface of the chamber housing.

17. 1. A gas distributor for a plasma chamber, comprising: A gas inlet; a plasma shaper adjacent the gas inlet, the plasma shaper including a curved shaper end wall extending into the plasma chamber and having an apex extending toward a wall of a chamber housing; A gas distributor comprising:

18. 20. The gas distributor of claim 17, further comprising a shaper ring extending around an outer periphery of a shaper wall of the plasma shaper or around an inner surface of the chamber housing.

19. The plasma shaper further comprises: a shaft extending through an interior of the shaper wall; a flange extending from the shaft and positioned within a recess defined by the curved shaper end wall; The gas distributor of claim 17 , comprising:

20. The gas distributor of claim 17 , wherein the recess comprises a cylindrical recess or a hemispherical recess.

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