Gas delivery for tungsten-containing layers

Abstract

A method of forming a tungsten-containing layer on a substrate includes: a) placing a substrate on a substrate support in a process volume of a process chamber, b) supplying a precursor gas to the process volume of the process chamber for a first duration, and c) supplying a tungsten-containing gas to the process volume of the process chamber for a second duration subsequent to the first duration by opening a pulsing valve on the tungsten-containing gas supply line to form a tungsten-containing layer on the substrate. The tungsten-containing gas supply line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connecting the inlet of the pulsing valve to a reservoir of tungsten-containing gas and the second section connecting the outlet of the pulsing valve to the inlet of the process chamber.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to forming tungsten-containing layers. More particularly, embodiments described herein relate to gas delivery systems and methods for forming tungsten-containing layers. [Background technology]

[0002] Metal-containing layers, such as tungsten-containing layers, are used in a variety of structures in devices, such as semiconductor devices. One type of structure that is often formed on a substrate is a high aspect ratio structure. As the aspect ratio of the structures increases, it can become challenging to adequately fill those high aspect ratio structures with a given material, such as a metal-containing layer (e.g., a tungsten-containing layer).

[0003] To aid in filling the high aspect ratio structures with tungsten, a tungsten-containing gas (e.g., tungsten hexafluoride) can be pulsed into the process chamber along with a gas (e.g., diborane) to react with the tungsten-containing gas, which can help allow the tungsten of the tungsten-containing gas to reach deeper portions of the high aspect ratio structures.

[0004] Although this pulsing can help allow tungsten to reach deeper portions of high aspect ratio structures, problems remain. For example, the tungsten layers formed by these pulsing processes often have haze and / or may not form to target levels of purity or composition. In one such example, the tungsten layers formed by the pulsing process may contain too high a percentage of boron.

[0005] Therefore, there is a need for a system and associated process for forming a tungsten layer that does not have the above-mentioned problems. Summary of the Invention

[0006] In one embodiment, a method for forming a tungsten-containing layer on a substrate is provided, the method includes: a) placing a substrate on a substrate support in a process volume of a process chamber; b) supplying a precursor gas to the process volume of the process chamber for a first duration; and c) supplying a tungsten-containing gas to the process volume of the process chamber for a second duration subsequent to the first duration by opening a pulsing valve on a tungsten-containing gas supply line to form a tungsten-containing layer on the substrate, the tungsten-containing gas supply line including a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connecting the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connecting the outlet of the pulsing valve to an inlet to the process chamber, and an internal cross-sectional area of ​​the first section of the tungsten-containing gas supply line being at least 10% greater than an internal cross-sectional area of ​​the second section of the tungsten-containing gas supply line.

[0007] In another embodiment, a method for forming a tungsten-containing layer is provided, the method includes: a) placing a substrate on a substrate support in a process volume of a process chamber; b) supplying a precursor gas to the process volume of the process chamber for a first duration; and c) supplying a tungsten-containing gas to the process volume of the process chamber for a second duration subsequent to the first duration by opening a pulsing valve on a tungsten-containing gas supply line to form a tungsten-containing layer on the substrate, the tungsten-containing gas supply line including a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connecting the inlet of the pulsing valve to a reservoir of tungsten-containing gas and the second section connecting the outlet of the pulsing valve to an inlet to the process chamber, the method further including supplying a carrier gas to the second section of the tungsten-containing gas supply line.

[0008] In another embodiment, a method of forming a tungsten-containing layer is provided. The method includes a) disposing a substrate on a substrate support in a process volume of a process chamber; b) supplying a boron-containing gas to the process volume of the process chamber for a first duration; and c) supplying a tungsten-containing gas to the process volume of the process chamber for a second duration subsequent to the first duration by opening a pulsing valve on a tungsten-containing gas supply line to form a tungsten-containing layer on the substrate, the tungsten-containing layer filling and forming a plurality of high aspect ratio structures disposed on the substrate, the tungsten-containing gas supply line including a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connecting the inlet of the pulsing valve to a reservoir of tungsten-containing gas and the second section connecting the outlet of the pulsing valve to an inlet to the process chamber, an internal cross-sectional area of ​​the first section of the tungsten-containing gas supply line being at least 10% greater than an internal cross-sectional area of ​​the second section of the tungsten-containing gas supply line.

[0009] A more particular description of the present disclosure briefly outlined above may be had by reference to embodiments, some of which are illustrated in the accompanying drawings, in such a way that the above-listed features of the disclosure may be understood in detail. It should be noted, however, that the accompanying drawings depict only exemplary embodiments, and therefore should not be considered as limiting the scope of the present disclosure, which may embrace other embodiments that are equally effective. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic diagram of a processing system, according to one embodiment. [Diagram 2] FIG. 2 is a process flow diagram of a method of forming the tungsten-containing layer shown in FIG. 1, according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] For ease of understanding, wherever possible, identical reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional description.

[0012] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to forming tungsten-containing layers. More particularly, embodiments described herein relate to gas delivery systems and methods for forming tungsten-containing layers.

[0013] 1 is a schematic diagram of a processing system 100, according to one embodiment. The processing system 100 can be used to deposit a metal-containing layer, such as a tungsten-containing layer, on a substrate. Although the following disclosure primarily describes using a pulsed chemical vapor deposition (CVD) process to form a nucleation layer of a tungsten-containing material on a high aspect ratio structure formed on a substrate, the benefits of the disclosure may generally be applied to any process (e.g., atomic layer deposition, bulk CVD, plasma CVD, etc.) that supplies a tungsten-containing gas (e.g., tungsten hexafluoride WF6) to a process chamber.

[0014] The processing system 100 includes a process chamber 101, a first gas supply line 120 (also referred to as a tungsten-containing gas supply line), a second gas supply line 160, and a carrier gas supply line 140. The gas supply lines 120, 140, 160 can supply gases to the interior of the process chamber 101 so that a deposition process can be performed on a substrate disposed inside the process chamber 101. The processing system 100 further includes an exhaust line 130 connected to an exhaust inlet 131 of the process chamber 101. The exhaust line 130 can be used to exhaust gases from the process volume 104. The exhaust line 130 can be connected to a vacuum pump (not shown).

[0015] The process chamber 101 includes a chamber body 107 that surrounds a process volume 104. The chamber body 107 includes a top 106, a bottom 103, and one or more sidewalls 102 that connect the top 106 to the bottom 103. The top 106 and bottom 103 are shown in simplified form for clarity of illustration, and each may include additional equipment (not shown). For example, the top 106 may include additional equipment, such as a showerhead or other equipment for evenly distributing gases to the process volume 104.

[0016] The process chamber 101 further includes a substrate support 105 disposed within the process volume 104. A substrate 50 can be disposed on the substrate support 105 within the process volume 104 such that a tungsten-containing layer 51 can be formed (e.g., deposited) on the substrate 50. An example of a tungsten-containing layer that can be formed using the processes described herein includes tungsten doped with boron, where the boron has a concentration of, for example, about 1% to about 20%, such as about 10%, of the tungsten-containing layer. Although not shown, the substrate 50 can include a number of high aspect ratio structures formed thereon before deposition is performed. In one non-limiting example, these high aspect ratio structures can be formed of titanium nitride. The deposition process described below can be useful for forming a tungsten-containing layer to fill these high aspect ratio structures, for example, to fill trenches having an aspect ratio of 10:1, 20:1, or higher.

[0017] During deposition of the tungsten-containing layer 51, a tungsten-containing gas, such as tungsten hexafluoride (WF6), can be supplied to the process volume 104 of the process chamber 101 using a first gas supply line 120. In some embodiments, other tungsten-containing gases can be used in place of tungsten hexafluoride to form the tungsten-containing layer 51.

[0018] A second gas supply line 160 can be used to supply a precursor gas, such as a boron-containing gas, such as diborane (B2H6), to the process volume 104 of the process chamber 101. In some embodiments, other boron-containing gases, such as borane (BH3), may be used instead of diborane. Additionally, in some embodiments, precursors containing elements other than boron may be used. For example, in some embodiments, silane (SiH4) or disilane (Si2H6) may be used as a precursor to react with a tungsten-containing gas instead of a boron-containing gas such as diborane.

[0019] To assist in supplying the tungsten-containing gas and precursor gas to the process volume 104 of the process chamber 101 through the supply lines 120, 160, a carrier gas supply line 140 can be used to supply a carrier gas, such as argon, to the first gas supply line 120 and the second gas supply line 160. In some embodiments, other carrier gases, such as hydrogen, helium, or nitrogen, may be used instead of or in addition to argon. For example, in one embodiment, hydrogen is used as the carrier gas for B2H6 and argon is used as the carrier gas for WF6. For example, the carrier gas supplied by the carrier gas supply line 140 may be used to purge equipment upstream of the process volume when the tungsten-containing gas and precursor gas, respectively, enter the process through any shared equipment used by both the tungsten-containing gas and the precursor gas, such as a showerhead. Even in the absence of shared equipment, a carrier gas can be used between pulses of precursor gas and tungsten-containing gas to increase the rate of reaction between the precursor gas and the tungsten-containing gas that occurs near the substrate 50 relative to reactions that occur in, for example, a portion of the process volume 104 closer to the top 106 of the process chamber 101.

[0020] First gas supply line 120 can include a tungsten-containing gas source 125 (e.g., a pressurized tank of WF6), a tungsten-containing gas reservoir 126, a pulsing valve 127, and sections of fluid conduit (e.g., sections of piping, tubes, fittings, etc. that can be used to transport a fluid, such as a gas or liquid), as described below. These sections of fluid conduit are described with respect to pulsing valve 127.

[0021] First gas supply line 120 can include an inlet section 121 that connects tungsten-containing gas source 125 to pulsing valve 127. Inlet section 121 includes a reservoir supply section 121A and a reservoir discharge section 121B (also referred to as a first section). Reservoir supply section 121A connects tungsten-containing gas reservoir 126 to tungsten-containing gas source 125. Reservoir discharge section 121B connects tungsten-containing gas reservoir 126 to an inlet side of pulsing valve 127. Tungsten-containing gas reservoir 126 can accumulate a volume of tungsten-containing gas near pulsing valve 127 so that when pulsing valve 127 opens, there is a sufficient volume and pressure of tungsten-containing gas to supply through pulsing valve 127.

[0022] The first gas supply line 120 may further include an outlet section 122 (also referred to as a second section) that connects the outlet side of the pulsing valve 127 to the process volume 104 of the process chamber 101 .

[0023] The pulsing valve 127 can be configured to open for a specified pulse duration to provide a predetermined amount of tungsten-containing gas from the inlet section 121 to the outlet section 122 and to the process volume 104 of the process chamber 101. In some embodiments, the pulsing valve 127 is configured to open for a pulse duration of about 0.1 seconds to about 10.0 seconds, such as about 1.0 seconds to about 3.0 seconds, such as about 2.0 seconds.

[0024] The first gas supply line 120 can further include a diversion section 123 that can be used to supply a flow of tungsten-containing gas to the exhaust line 130 (also referred to as the foreline). The diversion section 123 can include a diversion valve 124 for controlling the flow of tungsten-containing gas to the exhaust line 130. The supply to the diversion section 123 is connected to a reservoir supply section 121A upstream of the tungsten-containing gas reservoir 126. In some other embodiments, the diversion section 123 is connected to a reservoir discharge section 121B between the tungsten-containing gas reservoir 126 and a pulsing valve 127. Supplying a flow of tungsten-containing gas to the exhaust line 130 can help reduce the concentration of other gases inside the first gas supply line 120 and the process volume 104 that build up between production runs. The diversion valve 124 is typically opened at the beginning of the process to help remove these other gases, and the diversion valve 124 is typically closed once the tungsten-containing gas reservoir 126 is filled to a sufficient pressure. Although not shown, the first gas supply line 120 and the other gas supply lines 140, 160 may include a number of other sensors, valves and flow controllers (e.g., mass flow controllers) not shown to help supply gases from the respective gas sources 125, 145, 165.

[0025] The second gas supply line 160 can include a precursor gas source 165, such as a boron-containing gas source (e.g., a pressurized tank of B2H6), a precursor gas reservoir 166, a pulsing valve 167, and sections of fluid conduit (e.g., sections of tubing, tubes, fittings, etc. that can be used to transport fluids), as described below with respect to the pulsing valve 167.

[0026] The second gas supply line 160 can include an inlet section 161 connecting a precursor gas source 165 to a pulsing valve 167. The inlet section 161 includes a reservoir supply section 161A and a reservoir discharge section 161B. The reservoir supply section 161A connects a precursor gas reservoir 166 to the precursor gas source 165. The reservoir discharge section 161B connects the precursor gas reservoir 166 to the inlet side of the pulsing valve 167. The precursor gas reservoir 166 can accumulate a volume of precursor gas near the pulsing valve 167 so that when the pulsing valve 167 opens, there is a sufficient volume and pressure of precursor gas to supply through the pulsing valve 167.

[0027] The second gas supply line 160 may further include an outlet section 162 connecting the outlet side of the pulsing valve 167 to the process volume 104 of the process chamber 101 .

[0028] The pulsing valve 167 can be configured to open for a specified pulse duration to supply a predetermined amount of tungsten-containing gas from the inlet section 161 to the outlet section 162 and the process volume 104 of the process chamber 101. In some embodiments, the pulsing valve 167 is configured to open for a pulse duration of about 0.1 seconds to about 10.0 seconds, such as about 1.0 seconds to about 3.0 seconds, such as about 2.0 seconds. Although not shown, the second gas supply line 160 can further include a diversion section similar to the diversion section 123 described above, with a diversion valve, to reduce the concentration of gases other than the precursor gas. This diversion section can be used at the beginning of the process to help remove these other gases that have accumulated during a production run.

[0029] Carrier gas supply line 140 can include a carrier gas source 145 (e.g., a pressurized tank of argon), a first valve 147, a second valve 148, and sections of fluid conduit (e.g., sections of piping, tubes, fittings, etc. that can be used to transport fluids) as described below. These sections will be described with respect to valves 147, 148.

[0030] The carrier gas supply line 140 may include an inlet section 141 connecting a carrier gas source 145 to the valves 147, 148. The carrier gas supply line 140 may further include a first outlet section 142 connecting an outlet side of the first valve 147 to the outlet section 122 of the first gas supply line 120 at a location 128 on the outlet section 122. The location 128 may be relatively close to the pulsing valve 127, as described in more detail below. The first outlet section 142 is configured to supply carrier gas to the outlet section 122 so that the carrier gas may assist in supplying the tungsten-containing gas to the process volume 104 of the process chamber 101.

[0031] The carrier gas supply line 140 can further include a second outlet section 143 connecting the outlet side of the second valve 148 to an outlet section 162 of the second gas supply line 160. The second outlet section 143 is configured to supply a carrier gas to the outlet section 162 so that the carrier gas can assist in supplying the precursor gas to the process volume 104 of the process chamber 101.

[0032] Although a single carrier gas source 145 is shown, in some embodiments separate carrier gas sources are used, so that the carrier gas lines are completely separate. Having separate carrier gas sources and lines can allow for the use of different carrier gases (e.g., hydrogen and argon) for the precursor gas and the tungsten-containing gas, and can also help prevent mixing of the precursor gas and the tungsten-containing gas outside of the process volume 104 of the process chamber 101.

[0033] The processing system 100 includes features that improve the deposition of tungsten-containing layers 51 over conventional processing systems. For example, the processing system 100 can be used to more consistently deposit tungsten-containing layers having a target material percentage (e.g., 90% tungsten and 10% boron) than conventional processing systems.

[0034] A first feature that provides an improvement is that the inner diameter (or cross-sectional area) of the reservoir discharge section 121B is at least 10% larger than the inner diameter (or cross-sectional area) of the outlet section 122. In some embodiments, the inner diameter (or cross-sectional area) of the reservoir discharge section 121B is at least 30%, at least 50% or at least 100% larger than the inner diameter (or cross-sectional area) of the outlet section 122. In one particular embodiment, the inner diameter of the reservoir discharge section 121B is 3 / 8 inch while the inner diameter of the outlet section 122 is ¼ inch.

[0035] During processing, the portion of outlet section 122 downstream from location 128 simultaneously contains a flow of tungsten-containing gas from reservoir discharge section 121B and a flow of carrier gas from carrier gas supply line 140, while reservoir discharge section 121B only contains a flow of tungsten-containing gas flowing through reservoir discharge section 121B. Thus, outlet section 122 contains the total flow rate of gas from reservoir discharge section 121B plus the flow rate of gas from carrier gas supply line 140. Thus, the total flow rate of outlet section 122 is significantly greater than the total flow rate of gas in reservoir discharge section 121B.

[0036] Generally, the inner diameter of a fluid conduit is designed to increase or at least remain the same when the flow rate of the fluid through the conduit increases. Therefore, it is counterintuitive to design a fluid conduit with a lower flow rate (i.e., reservoir discharge section 121B) to have a larger inner diameter compared to a fluid conduit with a higher flow rate (i.e., outlet section 122). Without being bound by any theory, it is believed that a larger diameter in reservoir discharge section 121B compared to outlet section 122 may result in less abrupt pressure changes in reservoir discharge section 121B than when reservoir discharge section 121B is designed to have the same or smaller inner diameter compared to the inner diameter of outlet section 122. Abrupt pressure changes may result in potential concentration of tungsten-containing gas and uneven gas flow rates. Because the pressure changes in the reservoir discharge section 121B are less abrupt, a more consistent flow rate of tungsten-containing gas can be delivered to the outlet section 122, and ultimately to the process volume 104 of the process chamber 101, which improves the consistency of the deposition during the run.

[0037] A second feature that improves the processing system 100 over conventional processing systems is that a carrier gas is provided to the first gas supply line 120 downstream of the pulsing valve 127 of the first gas supply line 120. In some embodiments, the carrier gas is provided to the first gas supply line 120 at a location 128 on the outlet section 122 proximate to the pulsing valve 127 downstream of the pulsing valve 127. For example, the location 128 can be about 0.5 inches to about 6.0 inches downstream from the pulsing valve 127, such as about 1.0 inches to about 3.0 inches, such as about 2.0 inches downstream from the pulsing valve 127. Providing the carrier gas downstream of the pulsing valve 127 can also reduce sudden pressure changes in the reservoir discharge section 121B compared to when the carrier gas is provided upstream of the pulsing valve 127. Other features that can also reduce these pressure changes include not placing a shunt valve along the flow path used during production and the selection of the type of pulsing valve used. For example, a vacuum coupled radiation (VCR) valve may cause a less abrupt change in pressure than a standard surface mount valve.

[0038] The processing system 100 may further include a controller 190 connected to the equipment shown in FIG. 1. The controller 190 may be any type of controller used in an industrial environment, such as a programmable logic controller (PLC). The controller 190 includes a processor 192, a memory 194, and input / output (I / O) circuitry 196. The controller 190 may further include one or more of the following components (not shown): one or more power supplies, a clock, communication components (e.g., a network interface card), and a user interface, etc., typically found in a controller for semiconductor equipment.

[0039] The memory 194 may include non-transient memory. This non-transient memory may be used to store programs and settings, as described below. The memory 194 may include one or more types of readily available memory, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, floppy disk, hard disk, or random access memory (RAM) (e.g., non-volatile random access memory (NVRAM)).

[0040] The processor 192 is configured to execute various programs stored in the memory 194, such as a program configured to execute the method 1000 described below with respect to FIG. 2. During the execution of these programs, the controller 190 can communicate with I / O devices (e.g., sensors and actuators) via the I / O circuitry 196. For example, during the execution of these programs and during communication via the I / O circuitry, the controller 190 can control outputs (e.g., opening and closing valves) and receive information (e.g., feedback regarding the open / closed status of valves) from feedback devices, sensors and other instruments within the processing system 100. The memory 194 can further include various operational settings used to control the processing system 100. For example, these settings may include, among others, (1) settings for controlling the duration of blocks 1004, 1006, 1008, 1010, and 1014 of method 1000 described below with respect to FIG. 2, (2) settings for controlling the temperature and pressure in process chamber 101 during deposition of tungsten-containing layer 51 as described herein, and (3) settings for controlling the flow rate of gas supplied to process volume 104 during different portions of method 1000 described below with respect to FIG. 2.

[0041] 2 is a process flow diagram of a method 1000 for forming the tungsten-containing layer 51 shown in FIG 1, according to one embodiment. The method 1000 begins at block 1002.

[0042] At block 1002, a substrate 50 is placed on a substrate support 105 in the process volume 104 of the process chamber 101. Additionally, the previously described diversion process may begin at this time for the first gas supply line 120. The previously described diversion process is completed before proceeding to block 1004.

[0043] At block 1004, valves 147, 148 are opened to supply a carrier gas (e.g., argon) to the process volume 104 through sections 122, 162. During block 1004, the carrier gas can be supplied at a flow rate of about 1 to about 10 liters per minute, such as about 2 to about 5 liters per minute. In some embodiments, the flow rate of the carrier gas can be maintained relatively constant throughout the method 1000.

[0044] At block 1006, a pulse of a precursor gas, such as a boron-containing gas (e.g., diborane), can be provided to the process volume 104 of the process chamber 101 by opening the pulsing valve 167 for a specified pulse duration (also referred to as a first duration). In some embodiments, the pulsing valve 167 is configured to open for a pulse duration of about 0.1 seconds to about 10.0 seconds, such as about 1.0 seconds to about 3.0 seconds, such as about 2.0 seconds. After the specified pulse duration, the pulsing valve 167 closes. During block 1006, the precursor gas can be provided at a flow rate of about 100 sccm to about 1000 sccm, such as about 200 sccm to about 600 sccm (e.g., 350 sccm). Starting with a pulse of the precursor gas can help to initiate a nucleation process for forming a tungsten-containing layer over another layer on the substrate, such as over a plurality of high aspect structures formed of titanium nitride.

[0045] At block 1008, the supply of carrier gas to the process volume 104 continues. Block 1008 can continue for a predetermined duration, such as between about 0.1 seconds and about 10.0 seconds, such as between about 1.0 seconds and about 3.0 seconds, such as about 2.0 seconds. The duration of block 1008 can be adjusted to increase the rate of reaction between the tungsten-containing gas (supplied at block 1010) and the precursor gas (supplied at block 1006) that occurs near the substrate 50 relative to other locations within the process volume 104, such as locations within the process volume 104 closer to the top 106 of the process chamber 101.

[0046] At block 1010, a pulse of a tungsten-containing gas (e.g., WF6) can be provided to the process volume 104 of the process chamber 101 by opening the pulsing valve 127 for a specified pulse duration (also referred to as a second duration). In some embodiments, the pulsing valve 167 is configured to open for a pulse duration of about 0.1 seconds to about 10.0 seconds, such as about 1.0 seconds to about 3.0 seconds, such as about 2.0 seconds. After the specified pulse duration, the pulsing valve 167 closes. During block 1010, the tungsten-containing gas can be provided at a flow rate of about 20 sccm to about 400 sccm, such as about 50 sccm to about 150 sccm.

[0047] By providing a tungsten-containing gas at block 1010, a reaction between a precursor gas (e.g., B2H6) and a tungsten-containing gas (e.g., WF6) can occur such that a tungsten-containing layer 51 can be deposited on the substrate 50, for example, on a high aspect ratio structure (e.g., a trench) formed on the substrate 50.

[0048] In block 1010, tungsten-containing gas is supplied through reservoir discharge section 121B, which has an internal cross-sectional area that is at least 10%, e.g., at least 30%, at least 50%, or at least 100% greater than the internal cross-sectional area of ​​outlet section 122. As previously described, this greater cross-sectional area of ​​reservoir discharge section 121B reduces sudden pressure changes in the tungsten-containing gas that may cause uneven flow rates and possible condensation of the tungsten-containing gas. Additionally, in some embodiments, carrier gas is supplied to first gas supply line 120 at a location 128 on outlet section 122 downstream of pulsing valve 127 and relatively close to pulsing valve 127. Supplying carrier gas downstream of pulsing valve 127 may further reduce sudden pressure changes in reservoir discharge section 121B compared to when carrier gas is supplied upstream of pulsing valve 127. Reducing these sudden pressure changes can lead to a more uniform and consistent deposition of tungsten-containing layer 51.

[0049] At block 1012, a determination may be made to determine whether a target thickness of the tungsten-containing layer 51 being deposited has been reached. In some embodiments, this target thickness may be between about 25 Angstroms and about 200 Angstroms, such as about 100 Angstroms. In one embodiment, this thickness determination may be made based on the total number of times blocks 1004-1010 are performed. Typically, blocks 1004-1012 may be repeated five or more times, such as about 10-20 times.

[0050] At block 1012, if the target thickness has not been reached, then blocks 1004-1010 are repeated. When repeating these blocks, the repeat of block 1004 may have a duration similar to the duration of block 1008 described above, to increase the percentage of reactions occurring near the substrate 50 relative to reactions occurring at other locations within the process volume 104. At block 1012, if the target thickness has been reached, then the method 1000 proceeds to block 1014.

[0051] At block 1014, an additional pulse of precursor gas is provided to the process volume 104. This additional pulse of precursor gas may be useful, for example, when using a bulk CVD process to form a thicker tungsten-containing layer over the tungsten-containing layer 51 formed using the method 1000 described herein.

[0052] The foregoing is directed to examples of the disclosure; however, other and further examples of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the appended claims.

Claims

1. 1. A method of forming a tungsten-containing layer on a substrate, the method comprising: a) placing a substrate on a substrate support within a process volume of a process chamber; b) supplying a precursor gas to the process volume of the process chamber for a first duration; and c) supplying a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas supply line for a second duration subsequent to the first duration to form a tungsten-containing layer on the substrate. Including, the tungsten-containing gas supply line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve; the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas; the second section connects the outlet of the pulsing valve to an inlet of the process volume of the process chamber; an internal cross-sectional area of ​​the first section of the tungsten-containing gas supply line that is at least 10% greater than an internal cross-sectional area of ​​the second section of the tungsten-containing gas supply line; method.

2. 10. The method of claim 1, further comprising supplying a carrier gas to the second section of the tungsten-containing gas supply line when the tungsten-containing gas is supplied to the process volume of the process chamber.

3. 3. The method of claim 2, wherein operations b) and c) are repeated five or more times to increase the thickness of the tungsten-containing layer formed on the substrate.

4. 3. The method of claim 2, wherein the internal cross-sectional area of ​​the first section of the tungsten-containing gas supply line is at least 30% greater than the internal cross-sectional area of ​​the second section of the tungsten-containing gas supply line.

5. 3. The method of claim 2, wherein the internal cross-sectional area of ​​the first section of the tungsten-containing gas supply line is at least 50% greater than the internal cross-sectional area of ​​the second section of the tungsten-containing gas supply line.

6. 3. The method of claim 2, wherein the first section has an inner diameter of 3 / 8 inch and the second section has an inner diameter of 1 / 4 inch.

7. The method of claim 4 wherein the carrier gas is argon.

8. 2. The method of claim 1, wherein the tungsten-containing gas is tungsten hexafluoride.

9. 10. The method of claim 1, wherein the tungsten-containing gas is supplied to the process volume of the process chamber by opening the pulsing valve for a duration of about 0.5 seconds to about 10.0 seconds.

10. 1. A method of forming a tungsten-containing layer, the method comprising: a) placing a substrate on a substrate support within a process volume of a process chamber; b) supplying a precursor gas to the process volume of the process chamber for a first duration; and c) supplying a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas supply line for a second duration subsequent to the first duration to form a tungsten-containing layer on the substrate. Including, the tungsten-containing gas supply line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve; the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas; the second section connects the outlet of the pulsing valve to an inlet of the process volume of the process chamber, the method further comprising: supplying a carrier gas to the second section of the tungsten-containing gas supply line; A method comprising:

11. 11. The method of claim 10, wherein the carrier gas is supplied onto the second section of the tungsten-containing gas supply line at a location between about 0.5 inches and about 6.0 inches downstream from the outlet of the pulsing valve.

12. 11. The method of claim 10, wherein the carrier gas is supplied onto the second section of the tungsten-containing gas supply line at a location between about 1.0 inch and about 3.0 inches downstream from the outlet of the pulsing valve.

13. 11. The method of claim 10, wherein the tungsten-containing gas is tungsten hexafluoride.

14. 14. The method of claim 13, wherein the tungsten-containing gas is supplied to the process volume of the process chamber by opening the pulsing valve for a duration of about 0.5 seconds to about 10.0 seconds.

15. 1. A method of forming a tungsten-containing layer on a substrate, the method comprising: a) placing a substrate on a substrate support within a process volume of a process chamber; b) supplying a boron-containing gas to the process volume of the process chamber for a first duration; and c) supplying a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas supply line for a second duration subsequent to the first duration to form a tungsten-containing layer on the substrate, the tungsten-containing layer filling the plurality of high aspect ratio structures disposed on the substrate. Including, the tungsten-containing gas supply line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve; the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas; the second section connects the outlet of the pulsing valve to an inlet of the process volume of the process chamber; an internal cross-sectional area of ​​the first section of the tungsten-containing gas supply line that is at least 10% greater than an internal cross-sectional area of ​​the second section of the tungsten-containing gas supply line; method.

16. 16. The method of claim 15, further comprising supplying a carrier gas to the second section of the tungsten-containing gas supply line when the tungsten-containing gas is supplied to the process volume of the process chamber.

17. 17. The method of claim 16, wherein operations b) and c) are repeated five or more times to increase the thickness of the tungsten-containing layer formed on the substrate.

18. 17. The method of claim 16, wherein the carrier gas is supplied onto the second section of the tungsten-containing gas supply line at a location between about 1.0 inch and about 3.0 inches downstream from the outlet of the pulsing valve.

19. 16. The method of claim 15, wherein the tungsten-containing gas is tungsten hexafluoride.

20. 20. The method of claim 18, wherein the boron-containing gas is diborane.

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