Temperature control components and CVD reactors

Abstract

The present invention discloses a temperature control component and a CVD reaction apparatus, the apparatus includes a cavity, a gas supply unit installed at the top of the cavity for flowing a reaction gas for growing a film inside the cavity, and a mounting table installed at the bottom of the cavity and facing the gas supply unit for supporting a substrate, the cavity further includes a bush located inside the cavity and installed around the inner wall of the cavity, a side heater located close to the inner wall of the cavity and above the mounting table for heating the reaction gas in the cavity, and a temperature control component installed inside the cavity and above the mounting table for emitting heat to heat the reaction gas in the center region of the cavity. The present invention can reduce the radial temperature gradient along the radial direction inside the cavity.

Description

[Technical field]

[0001] The present invention relates to the field of semiconductor processing equipment, and more particularly to temperature control components and CVD reactors. [Background technology]

[0002] An existing vapor phase epitaxial growth apparatus, for example a chemical vapor deposition (CVD) apparatus, includes a furnace body or cavity, a cavity top cover installed on the top of the cavity, and a shower head installed on the cavity top cover for flowing a reaction gas for film growth into the cavity. A mounting table is installed on the bottom of the cavity and is installed facing the shower head. A mounting surface for supporting a substrate is installed on the mounting table, and an under-heater is also installed below the mounting surface for heating the substrate so that the substrate can meet the temperature conditions for growing a film thereon. A side heater is installed close to the inner wall of the cavity and is used to heat the reaction gas located in the cavity.

[0003] The heater of the vapor phase epitaxial growth apparatus includes an under-heater located at the bottom of the cavity and a side-wall heater located at the side wall, so that the temperature of the reaction gas at the inlet of the apparatus is lowered, and at the same time, the side-wall temperature is raised due to the presence of the side-wall heater, and the temperature is increased along the radial direction, and a large radial temperature difference is generated, and the large radial temperature difference causes natural convection due to buoyancy, and a certain reflux (vortex) is generated on the hot wall side. Because the temperature on the hot wall side is high, for example, when making a SiC film, after the carbon source and silicon source are decomposed, the vortex transports the decomposition product to the side wall and the vicinity of the top cover, causing the deposition of SixCy, increasing the loss of the carbon source and silicon source, affecting the C / Si ratio at the top of the substrate, and making it impossible to control the reaction conditions.

[0004] Additionally, the high temperature gradient above the substrate can make key reactants very sensitive to temperature fluctuations, leading to unstable growth conditions for the film grown on the substrate and causing variations in both thickness and doping uniformity of the resulting film. Summary of the Invention

[0005] The objective of the present invention is to provide a temperature control component and a CVD reaction apparatus to solve the problems that the radial temperature gradient along the radial direction inside the cavity becomes too large and the axial temperature gradient along the axial direction of the cavity is large, making it difficult to control the film production conditions, and resulting in poor film thickness and doping uniformity.

[0006] In order to solve the above problems, the present invention is realized by the following means.

[0007] According to the present invention, there is provided a CVD reaction apparatus including a cavity, a gas supply unit 201 installed at the top of the cavity for flowing a reactive gas for growing a film inside the cavity, and a mounting table 400 installed at the bottom of the cavity facing the gas supply unit 201 for supporting a substrate 700, wherein the cavity further includes a bush located inside the cavity and installed around the inner wall of the cavity, a side heater 601 installed close to the inner wall of the cavity and located above the mounting table 400 for heating the reactive gas in the cavity, and a temperature control component 500 installed inside the cavity and located above the mounting table 400 for emitting heat to heat the reactive gas in the central region of the cavity.

[0008] Optionally, the temperature control component 500 is disposed coaxially with the cavity such that an elongated annular gas flow passage is formed between an outer wall of the temperature control component 500 and the bushing.

[0009] Optionally, the temperature control component 500 is fixedly connected to the cavity by a connector 510 located at one end of the temperature control component 500 proximate the gas supply 201 .

[0010] Optionally, the bushing includes an upper bushing 301 and a lower bushing 302 installed around the mounting table 400, the upper bushing 301 is positioned above the lower bushing 302, the side heater 601 is positioned between the upper bushing 301 and the inner wall of the cavity, and the temperature control component 500 is connected to the upper bushing 301 by a connector 510.

[0011] Optionally, the connector 510 includes an annular portion 511 and a plurality of connecting rods 512 spaced apart around the temperature control component 500, one end connected to the temperature control component 500 and the other end connected to the annular portion 511 wrapped around the upper bush 301.

[0012] Optionally, the annular portion 511, the plurality of connecting rods 512, and the temperature control component 500 are integrally formed.

[0013] Optionally, the apparatus further includes an under-heater 600 installed in the stage 400 for heating the substrate 700 .

[0014] Optionally, the heat absorption rate of the temperature control component 500 is greater than the heat absorption rate of the reactant gas.

[0015] Optionally, the temperature control component 500 and the connector 510 are fabricated using at least one of the following materials: graphite, silicon carbide, tantalum carbide, or high temperature resistant metals, such as tungsten, molybdenum, and tantalum.

[0016] Optionally, the temperature control component 500 and the connector 510 may have a silicon carbide and / or tantalum carbide coating applied to the surfaces thereof.

[0017] Optionally, the temperature control component 500 is a heat absorbing rod extending along the axial direction of the cavity, for absorbing heat emitted by the under-heater 600 and the side heater 601, and dissipating the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

[0018] Optionally, the heat absorption rod is generally cone-shaped.

[0019] Optionally, the diameter of the heat sink rod is less than half the diameter of the substrate 700 .

[0020] Optionally, the length of the heat absorbing rod is greater than half the length of the upper bushing 301 .

[0021] Alternatively, the distance between the end of the heat absorbing rod closest to one end of the substrate 700 and the substrate 700 is 20 mm to 100 mm.

[0022] Optionally, the temperature control component 500 is a heat absorbing cylinder extending along the axial direction of the cavity, absorbing heat emitted by the under-heater 600 and the side heater 601, and discharging the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

[0023] Optionally, the diameter of the heat absorbing barrel is larger than the diameter of the substrate 700 and smaller than the inner diameter of the upper bush 301 .

[0024] Optionally, the length of the heat absorbing barrel is greater than half the length of the upper bushing 301 .

[0025] Alternatively, the distance between the end of the heat absorbing cylinder close to one end of the substrate 700 and the substrate 700 is 20 mm to 100 mm.

[0026] Optionally, the temperature control component 500 includes a heat generating body 50, a heater 51 installed inside the heating body 50, and a controller 53 located outside the cavity and connected to the heater 51, and the controller 53 controls the heater 51 to heat the central region of the cavity.

[0027] Optionally, the heater 51 includes a heating wire 52 that passes through the interior of the connector 510 and leads out to the exterior of the cavity.

[0028] Optionally, the apparatus may further include a top cover 200 disposed on the top of the cavity, and the gas supply unit 201 may be disposed on the top cover 200 .

[0029] On the other hand, the present invention further provides a temperature control component for use in a cavity of a CVD reaction apparatus, the temperature control component including a heat generating body installed inside the cavity for heating a reaction gas in a central region of the cavity, and a connector for realizing a connection between the heat generating body and the cavity.

[0030] Optionally, the heat generating body is disposed coaxially with the cavity.

[0031] Optionally, the connector includes an annular portion and a plurality of connecting rods spaced apart around the circumference of the heat generating body, one end connected to the heat generating body and the other end connected to the annular portion and fixedly connected to the cavity.

[0032] Optionally, the heat generating body is a heat absorbing rod extending along the axial direction of the cavity, for absorbing heat emitted by an under-heater and a side heater installed in the CVD reactor, and dissipating the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

[0033] Optionally, the entire heat absorbing rod is cone-shaped.

[0034] Optionally, the heat generating body is a heat absorbing cylinder extending along the axial direction of the cavity, absorbing heat emitted by an under-heater and a side heater installed in the CVD reactor, and discharging the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

[0035] Optionally, the diameter of the heat sink is equal to or greater than the diameter of a substrate to be processed in the CVD reactor.

[0036] Optionally, the heat absorption rate of the heat generating body is greater than the heat absorption rate of the reaction gas.

[0037] Optionally, the heating body and the connector are made of at least one material of graphite, silicon carbide, tantalum carbide, or high temperature resistant metals, such as tungsten, molybdenum, and tantalum.

[0038] Optionally, a silicon carbide and / or tantalum carbide coating layer is provided on the surface of the heating body and the connector.

[0039] Optionally, the heating element may further include a heater installed inside the heating body, and a controller located outside the cavity and connected to the heater, the controller controlling the heater to heat the central region of the cavity.

[0040] The present invention has at least one of the following advantages.

[0041] In the CVD reaction apparatus according to the present invention, the installed temperature control components heat the reaction gas in the central region of the cavity, thereby reducing the radial temperature gradient along the radial direction inside the cavity, and solving the problem of gas vortexes occurring above the substrate due to the high gas temperature in the region close to the side heaters and the low gas temperature in the central region and the low gas temperature and the low gas temperature in the central region and the low gas temperature, thereby reducing the deposition of by-products on the side walls of the cavity (specifically, the side walls of the upper and lower bushes) and the shower head attachment, improving the utilization rate of the reaction gas source, and extending the maintenance cycle of the side walls of the upper and lower bushes and the shower head.

[0042] The installed temperature control components can reduce the temperature gradient above the substrate and make the growth conditions on the substrate more stable, thereby improving the uniformity of the film growth thickness and doping across the substrate.

[0043] The heat absorbing rod has a cone shape as a whole, and this shape of the heat absorbing rod does not affect the flow direction and distribution of the reaction gas in the central region, and is advantageous in maintaining stable growth conditions of the substrate.

[0044] The heat absorption tube has a hollow cylindrical shape, and the reaction gas in the central region can flow through the center of the heat absorption tube onto the surface of the substrate, which is advantageous for maintaining stable growth conditions for the substrate. In some embodiments, the diameter of the heat absorption tube (which may specifically refer to the inner diameter) is set to be larger than the diameter of the substrate, thereby preventing particle contaminants that may be present in the heat absorption tube from falling onto the surface of the substrate, and further improving the quality of the substrate. [Brief description of the drawings]

[0045] [Figure 1] 1 is a schematic diagram showing the main structure of a CVD reactor according to an embodiment of the present invention; [Diagram 2] FIG. 2 is a schematic diagram showing the main structure of a temperature control component according to an embodiment of the present invention when the temperature control component is a heat absorbing rod; [Diagram 3]FIG. 2 is a schematic diagram showing the main structure of a temperature control component according to an embodiment of the present invention, which is a heat absorbing rod and has four connecting rods. [Figure 4] FIG. 2 is a schematic diagram showing the main structure of a CVD reactor according to another embodiment of the present invention. [Diagram 5] FIG. 2 is a schematic diagram of the main structure of a temperature control component according to an embodiment of the present invention when the temperature control component is a heat absorbing tube; [Figure 6] FIG. 2 is a schematic diagram showing the main structure of a temperature control component according to an embodiment of the present invention, which is a heat absorbing cylinder and has four connecting rods. [Figure 7] FIG. 2 is a schematic diagram showing the main structure of a CVD reactor according to an embodiment of the present invention when the temperature control component is an active heating component. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0046] The temperature control component and CVD reaction apparatus according to the present invention will be described in more detail below with reference to the drawings and specific embodiments. Based on the following description, the advantages and features of the present invention will become more clear. The attached drawings adopt a very simplified form and use inaccurate proportions, and are only used to easily and clearly assist in the description of the objects of the embodiments of the present invention. Please refer to the attached drawings to make the objects, features and advantages of the present invention more clearly understandable. The structures, ratios, sizes, etc. shown in the drawings attached to this specification are all used only to cooperate with the contents of the specification, and are used for those familiar with this technology to understand and read, and are not limiting conditions for limiting the implementation of the present invention, so they have no technical substantial meaning, and any modification of the structure, change of the ratio relationship, or adjustment of the size should be considered to be within the scope that the technical contents of the present invention can cover without affecting the efficacy that the present invention can bring and the purpose that the present invention can achieve.

[0047] As shown in FIG. 1, this embodiment includes an upper cavity 101 and a lower cavity 102, the upper cavity 101 is located within the lower cavity 102, and the two internal regions are mutually connected to form a reaction space. 100 and the cavity 100 Specifically, a top cover 200 is installed on the top of the upper cavity 101, and a heat sink 210 is installed on the top cover 200 and covers the upper cavity 101. 100 In this embodiment, the CVD reactor includes a gas supply unit 201 for supplying a reaction gas for growing a film inside the cavity. 100 A housing (not shown) may be installed on the outside of the top cover 200 to achieve sealing of the lower cavity 102. 103 201 and is disposed opposite the gas supply unit 201 and is used to support the substrate 700.

[0048] In this embodiment, the CVD reactor is 100 Located inside the cavity 100 A bushing installed around the inside wall of 300 The bushing includes an upper bushing 301 and a lower bushing 302 located around the mounting table 400. 300 The upper bush 301 is located above the lower bush 302 and is used to protect the inner wall of the upper cavity 101 from contamination. The lower bush 302 can move between a process position and a substrate loading / unloading position. When the substrate is loaded or unloaded, the lower bush 302 is located at the substrate loading / unloading position, and the manipulator is moved to the cavity 100 The substrate and / or the base below it are loaded and unloaded through the substrate loading / unloading port located at and the upper edge of the lower bush, and after the substrate is placed in place, the manipulator is moved and the lower bush 302 moves upward to the process position, thereby blocking the substrate loading / unloading port and ensuring the uniformity of the circumferential temperature of the substrate.

[0049] The side heater 601 is located between the upper bush 301 and the inner wall of the upper cavity 101 and above the mounting table 400. 100 (Specifically, Bush 300 ), specifically, it mainly heats the reaction gas located in the internal region of the upper cavity 101 (in this embodiment, specifically, the reaction gas in the internal region of the upper bush 301).

[0050] The upper heat insulating cylinder 801 is installed between the side heater 601 and the upper cavity 101. Since the temperature required for the CVD reaction apparatus is high, the side heater 601 needs to provide a high heating temperature exceeding 1000° C. In the present invention, the upper heat insulating cylinder 801 is installed between the side heater 601 and the upper cavity 101, and the heat of the side heater 601 is effectively transferred to the cavity. 100 This ensures the safety of the equipment and prevents the cavity from 100 This can reduce heat loss inside the vehicle.

[0051] The lower heat insulating cylinder 802 is installed between the lower cavity 102 and the lower bush 302. Since the temperature required for the CVD reaction apparatus is high, the under-heater 600 needs to provide a high heating temperature, for example, exceeding 1000° C. In the present invention, the lower heat insulating cylinder 802 is installed between the lower cavity 102 and the lower bush 302, which effectively limits the heat of the side heater to the inside of the cavity, ensures the safety of the equipment, and reduces the heat generated by the cavity. 100 This can reduce heat loss inside the vehicle.

[0052] The under-heater 600 is installed in the mounting table 400 and is used to heat the substrate 700 .

[0053] As shown in both FIG. 1 and FIG. 2, in this embodiment, the CVD reaction apparatus has the cavity 100 and is disposed inside the cavity and positioned above the mounting table 400. 100 (Specifically, Bush 300) further includes a temperature control component 500 for emitting heat to heat the reactant gas in a central region of the reactor.

[0054] In this embodiment, the cavity is heated by the installed temperature control parts. 100 (Specifically, Bush 300 ) by heating the reaction gas in the central region of the cavity 100 (Specifically, Bush 300 ) reduces the radial temperature gradient along the radial direction inside the side heater 601, and the gas temperature in the region close to the side heater 601 is high and tends to flow upward, while the gas temperature in the central region is low and tends to flow downward, thereby solving the problem of gas vortexes generated above the substrate 700, and the cavity 100 The deposition of by-products on the sidewalls of the upper bush 301 and the lower bush 302 and the shower head attachment can be reduced. The utilization rate of the reaction gas source can be improved, and the maintenance cycle of the sidewalls of the upper bush 301 and the lower bush 302 and the shower head can be extended. The installed temperature control components can reduce the temperature gradient in different regions above the substrate, making the growth conditions of the substrate more stable, thereby improving the uniformity of thickness and doping.

[0055] Continuing to refer to FIG. 1, in this embodiment, the temperature control component 500 is 100 (Specifically, the bushing 300 This allows the distance between the surface of the temperature control component 500 and the side wall of the upper bush 301 to be equal. 100 (Specifically, Bush 300 ) by uniformly heating the reaction gas in the central region of the cavity 100 (Specifically, Bush 300 ) can be better regulated in the radial direction along the inside of the tube.

[0056] Continuing to refer to FIG. 1 and FIG. 2, in this embodiment, the temperature control component 500 is connected to the cavity by a connector 510. 100Specifically, the temperature control component 500 is connected to the upper bush 301 by a connector 510.

[0057] As can be understood, in this embodiment, a flange 210 is installed between the upper cavity 101 and the top cover 200, and when the upper bush 301 engages with the flange 210, the annular portion 511 can wrap around the flange 210, but the present invention is not limited thereto, and in other embodiments, the connector 510 can be directly connected to the upper bush 301 or the top cover 200.

[0058] 2, the connector 510 includes an annular portion 511 that wraps around the upper bush 301 or the flange 210. In this embodiment, the number of the connecting rods 512 is three, and the connecting rods 512 are arranged symmetrically about the center. Alternatively, as shown in FIG. 3, the number of the connecting rods 512 may be four, and the connecting rods 512 are arranged symmetrically about the center.

[0059] As can be understood, the number of the connecting rods 512 is not limited thereto, and optionally the number of the connecting rods 512 may be two or more, as long as the temperature control component 500 can be fixed and the uniformity of the reaction gas delivered to the surface of the substrate is not affected.

[0060] In this embodiment, the heat absorption rate of the temperature control component 500 is greater than that of the reaction gas. Thus, the temperature control component 500 can absorb a large amount of radiant heat emitted by the side heater 601 and radiate the received heat to the surroundings, so as to realize the heating of the reaction gas around the temperature control component 500. In this embodiment, the temperature control component 500 and the connector 510 are manufactured using graphite materials. In another embodiment, the temperature control component 500 and the connector 510 can be manufactured using materials such as silicon carbide, tantalum carbide, or high-temperature-resistant metals such as tungsten, molybdenum, and tantalum. Different CVD reactors have different processing processes, so when selecting the material of the temperature control component, it is necessary to ensure that the process gas does not react with the surface of the temperature control component.

[0061] In this embodiment or other embodiments, a high temperature resistant coating layer such as silicon carbide and / or tantalum carbide is applied to the surface of the temperature control component 500 and the connector 510, in which case the host material of the temperature control component 500 and the connector 510 may be graphite or a high temperature resistant metal, and by applying a high temperature resistant coating layer such as silicon carbide and / or tantalum carbide to the surface of the host material, the cost of the temperature control component can be reduced, and the host material can be protected and the host material can be prevented from being damaged by the process gas.

[0062] In the same embodiment, the temperature control component 500 and the connector 510 may be made of the same material or different materials, and the present invention is not particularly limited thereto.

[0063] Continuing to refer to FIG. 1, in this embodiment, the temperature control component 500 is 100 (Specifically, Bush 300 ) along the axial direction of the under heater 600 and the side heater 601, and absorbs heat emitted by the cavity 100 (in particular Bush 300 The absorbed heat is then transferred to the cavity so as to heat the reaction gas located in the central region of the cavity. 100 (Specifically, Bush300 ) is a heat absorbing rod for firing into the central area.

[0064] In this embodiment, the heat absorbing rod has a cone shape as a whole, and the diameter of the heat absorbing rod is smaller than 1 / 2 the diameter of the substrate 700. The heat absorbing rod of this shape does not affect the flow direction and distribution of the reaction gas in the central region, and is advantageous in maintaining the growth conditions of the substrate stably. Preferably, in this embodiment, the diameter of the heat absorbing rod is 30 mm, but the present invention is not limited thereto.

[0065] In this embodiment, the length of the heat absorbing rod is greater than half the length of the upper bush 301. This allows the reaction gas in the entire area surrounded by the upper bush 301 to be heated, and the cavity 100 (Specifically, Bush 300 It is possible to more easily reduce the radial temperature gradient along the radial direction inside the heat absorbing rod. Preferably, in this embodiment, the length of the heat absorbing rod is 275 mm, but the present invention is not limited thereto.

[0066] The distance between the end of the heat absorbing rod close to one end of the substrate 700 and the substrate 700 is 20 mm to 100 mm. The distance is greater than 20 mm to ensure that the heat absorbing rod does not affect the insertion and removal of the substrate 700 by the external manipulator. The distance is less than 100 mm to ensure that the bottom and side walls of the heat absorbing rod can heat the reaction gas in the central area close to the substrate 700 area, and the cavity. 100 (Specifically, Bush 300 ) to avoid the occurrence of low temperature points inside the cavity, and ensure uniform heating of the substrate 700. This avoids the occurrence of a temperature gradient (temperature gradient in the axial direction of the cavity) above the substrate 700, and makes the growth conditions of the substrate 700 more stable, thereby improving the uniformity of thickness and doping. Preferably, in this embodiment, the distance between the end of the heat absorption rod close to one end of the substrate 700 and the substrate 700 is 50 mm, but the present invention is not limited thereto.

[0067] In this embodiment, in order to facilitate replacement of the temperature control component 500, the annular portion 511, the plurality of connecting rods 512 and the heat absorbing rod are integrally installed. In another embodiment, the above three components can be connected and fixed mechanically or by welding after being manufactured, and the present invention does not limit the connection method. The temperature control component 500 of this embodiment has a simple structure, but the cavity of the reaction gas is 100 (Specifically, Bush 300 The radial temperature gradient along the radial direction inside the cavity is too large, 100 (Specifically, Bush 300 ) along the axis of the film, it is difficult to control the film formation conditions due to the large axial temperature gradient, and this solves the problem of poor film thickness and doping uniformity.

[0068] 4 and 5 show some other embodiments, in which the temperature control component 500 may have a heat absorbing cylinder shape, and the cavity 100 (Specifically, Bush 300 The heat absorbing cylinder absorbs heat emitted by an under-heater 600 and a side heater 601 installed in the CVD reactor, and the cavity 100 (Specifically, Bush 300 The absorbed heat is then transferred to the cavity so as to heat the reaction gas located in the central region of the cavity. 100 (Specifically, Bush 300 ) to fire into the central area.

[0069] The heat absorbing cylinder has openings at both ends and is hollow inside, and the heat absorbing cylinder has a hollow cylindrical shape. The reaction gas in the central region is caused to flow through the center of the heat absorbing cylinder onto the surface of the substrate, and the heat absorbing cylinder is formed into a cavity. 100 (Specifically, Bush 300 This is advantageous in reducing the effect on the air current inside the substrate and in maintaining stable growth conditions for the substrate.

[0070] In one embodiment, the diameter of the heat absorbing cylinder is equal to or larger than the diameter of the substrate 700 and smaller than the inner diameter of the upper bush 301. Optionally, in this embodiment, the diameter of the heat absorbing cylinder is 180 mm. The heat absorbing cylinder of this shape is 100 (Specifically, Bush 300 In addition, if the diameter of the heat absorbing cylinder is larger than the diameter of the substrate, the deposits that may occur on the inner and outer cylinder walls of the heat absorbing cylinder will not fall onto the surface of the substrate, which can help improve the growth quality of the film on the substrate. In addition, it is preferable that the diameter of the heat absorbing cylinder is not too large, so that the reaction gas in the cavity 100 (Specifically, Bush 300 Since the temperature near the center region of the cavity is relatively low, if the diameter of the endothermic tube is too large, the cavity 100 (Specifically, Bush 300 Since the heating effect on the reaction gas in the central region of the heating element 10 is not significant, the technical problem to be solved by this embodiment may not be solved.

[0071] In this embodiment, the length of the heat absorbing tube is greater than half the length of the upper bush 301, so that the reaction gas in the entire region surrounded by the upper bush 301 is heated and the cavity 100 (Specifically, Bush 300 It is possible to more easily reduce the radial temperature gradient along the radial direction inside the cavity. Preferably, in this embodiment, the length of the heat absorbing cylinder is 330 mm, but the present invention is not limited to this. It is substantially the same as the cavity. 100 (Specifically, Bush 300 ) can be adjusted as needed based on the size of the

[0072] In this embodiment, the distance between the end of the heat absorbing tube close to one end of the substrate 700 and the substrate 700 is 20 mm to 100 mm. This reduces the temperature gradient above the substrate 700 (the temperature gradient in the axial direction of the cavity) and makes the substrate growth conditions more stable, thereby improving the uniformity of thickness and doping. Preferably, the distance between the end of the heat absorbing tube close to one end of the substrate 700 and the substrate 700 is 50 mm, but the present invention is not limited to this.

[0073] In this embodiment, the connector 510 is installed at the top of the heat absorbing barrel. The annular part 511, the connecting rod 512 and the heat absorbing barrel may be integrally formed, or in another embodiment, the above three parts may be mechanically or welded together after being manufactured, and the present invention does not limit the connection method.

[0074] In the present invention, the number of the connecting rods 512 is three and the connecting rods 512 are arranged symmetrically about the center. Alternatively, as shown in FIG. 6, the number of the connecting rods 512 is four and the four connecting rods 512 are arranged symmetrically about the center. It can be understood that the number of the connecting rods 512 is not limited thereto, and alternatively, the number of the connecting rods 512 may be two or more, as long as the heat absorbing tube can be fixed and the uniformity of the reaction gas delivered to the surface of the substrate is not affected. In this embodiment, the temperature control component 500 can be easily replaced.

[0075] In this embodiment, the cavity 100 (Specifically, Bush 300 The heat absorption tube can heat the reaction gas flowing inside thereof, and the heat absorption tube can heat the reaction gas flowing on the outer surface of the heat absorption tube, so as to achieve the objective of reducing the radial temperature gradient of the heat absorption tube.

[0076] As shown in FIG. 7, in this embodiment or other embodiments, the temperature control component 500 includes a heater 51 (as can be understood, the shape of the heat generating body 50 can be the above-mentioned cone-shaped heating rod or a cylindrical heating cylinder) installed inside the heat generating body 50, and the cavity 100 The heater 51 may further include a controller 53 located outside the cavity and connected to the heater 51. The controller 53 may 100 (Specifically, Bush 300 The heater 51 is controlled to heat the central region of the cavity 51 by penetrating the connector 510. 100 The heater 51 includes a plurality of heating wires 52 that are connected to the controller 53 and extend to the outside of the cavity 51. Thus, the controller 53 controls the heater 51 to heat the cavity 51 in accordance with a preset temperature. 100 (Specifically, Bush 300 The reaction gas in the central region of the cavity can be actively heated. 100 (Specifically, Bush 300 It can be seen that the radial temperature gradient along the inner radial direction of the substrate is better reduced, and the problem of gas vortexes occurring above the substrate due to the high gas temperature in the region close to the side heater and the low gas temperature in the central region and the low gas temperature in the central region being easy to flow downward is solved, thereby reducing deposition of by-products on the side walls of the upper and lower bushes and the shower head attachment. The utilization rate of the reaction gas source can be improved, and the maintenance cycle of the side walls of the upper and lower bushes and the shower head can be extended. The temperature control component 500 can reduce the temperature gradient above the substrate and make the growth conditions of the substrate more stable, thereby improving the uniformity of thickness and doping.

[0077] It should be noted that, in this specification, relational terms such as first and second are used merely to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that any such actual relationship or order exists between those entities or operations. And, the terms "comprise", "include", "comprise" or any other variant thereof are intended to cover a non-exclusive "comprise", whereby a process, method, article or device that includes a set of elements not only includes those elements, but also includes other elements not expressly listed or that are inherent in such process, method, article or device. In the absence of further limitations, an element limited by the phrase "comprises a" does not exclude the presence of other identical elements in the process, method, article or device that includes the element.

[0078] In the description of the present invention, it should be understood that the orientations or positional relationships indicated by terms such as "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like are orientations or positional relationships shown in the drawings, and are merely for the convenience and simplification of the description of the present invention, and do not indicate or suggest that the indicated devices or elements have a particular orientation and must be configured and operated in a particular orientation, and therefore should not be understood as limitations on the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0079] In the description of the present invention, unless otherwise clearly specified or limited, the terms "attached", "coupled", "connected", "fixed" and the like should be understood broadly. For example, they may be fixedly connected, detachably connected, integral, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediate member, internal communication between two elements, or an interactive relationship between two elements. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0080] In the present invention, unless otherwise clearly specified or limited, a first feature being "above" or "below" a second feature may include a direct contact between the first feature and the second feature, or may include a contact between the first feature and the second feature through another feature between them, rather than a direct contact. Furthermore, a first feature being "above", "above" and "on" a second feature may include a direct or diagonal contact between the first feature and the second feature, or may simply indicate that the first feature is higher in horizontal height than the second feature. A first feature being "below", "below" and "below" a second feature may include a direct or diagonal contact between the first feature and the second feature, or may simply indicate that the first feature is lower in horizontal height than the second feature.

[0081] Although the contents of the present invention have been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be construed as limiting the present invention. After reading the above contents, a person skilled in the art will be able to easily understand the modifications and alternatives of the present invention. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. Cavity and a gas supply (201) located at the top of the cavity for flowing reactive gases for growing a film inside the cavity; a stage (400) for supporting a substrate (700), the stage (400) being disposed at the bottom of the cavity and facing the gas supply unit (201), The cavity is a bushing located within the cavity and mounted around an inner wall of the cavity; a side heater (601) disposed adjacent to an inner wall of the cavity and located above the stage (400) for heating a reaction gas in the cavity; and a temperature control component (500) installed inside the cavity and located above the stage (400), for emitting heat to heat the reaction gas in the central region of the cavity.

2. The temperature control component (500) is disposed coaxially with the cavity; 2. The CVD reactor of claim 1, wherein an elongated annular gas flow passage is formed between an outer wall of said temperature control component (500) and said bushing.

3. 2. The CVD reactor of claim 1, wherein the temperature control component (500) is fixedly connected to the cavity by a connector (510) located at one end of the temperature control component (500) proximate the gas supply (201).

4. The bushing includes an upper bushing (301) and a lower bushing (302) that is installed around the mounting table (400), The upper bush (301) is located above the lower bush (302), The side heater (601) is located between the upper bush (301) and the inner wall of the cavity, 4. The CVD reactor of claim 3, wherein the temperature control component (500) is connected to the upper bushing (301) by a connector (510).

5. 5. The CVD reactor of claim 4, wherein the connector (510) includes an annular portion (511) and a plurality of connecting rods (512) spaced around the circumference of the temperature control component (500), one end connected to the temperature control component (500) and the other end connected to the annular portion (511) wrapping around the upper bushing (301).

6. 6. The CVD reactor of claim 5, wherein said annular portion (511), said plurality of connecting rods (512) and said temperature control element (500) are integrally formed.

7. 2. The CVD reaction apparatus of claim 1, further comprising an under-heater (600) installed in the mounting table (400) for heating the substrate (700).

8. 8. The CVD reactor of claim 1, wherein the heat absorption rate of the temperature control component (500) is greater than the heat absorption rate of the reaction gas.

9. The CVD reactor of any one of claims 3 to 7, characterized in that the temperature control component (500) and the connector (510) are manufactured using at least one material selected from the group consisting of graphite, silicon carbide, tantalum carbide, and high-temperature resistant metals such as tungsten, molybdenum, and tantalum.

10. 8. The CVD reactor of claim 3, wherein the temperature control component (500) and the connector (510) are provided with a coating layer of silicon carbide and / or tantalum carbide on the surfaces thereof.

11. 9. The CVD reactor of claim 8, wherein the temperature control component (500) is a heat absorbing rod extending along the axial direction of the cavity, for absorbing heat emitted by the under-heater (600) and the side heater (601), and for emitting the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

12. 12. The CVD reaction apparatus of claim 11, wherein said heat absorption rod is generally cone-shaped.

13. 12. The CVD reactor of claim 11, wherein the diameter of the heat sink rod is less than half the diameter of the substrate (700).

14. 12. The CVD reactor of claim 11, wherein the length of the heat sink rod is greater than half the length of the bush (301).

15. 12. The CVD reactor of claim 11, wherein the distance between the end of the heat sink rod closest to one end of the substrate (700) and the substrate (700) is between 20 mm and 100 mm.

16. 9. The CVD reaction apparatus of claim 8, wherein the temperature control component (500) is a heat absorbing tube extending along the axial direction of the cavity, absorbing heat emitted by the under-heater (600) and the side heater (601), and discharging the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

17. 17. The CVD reactor of claim 16, wherein the diameter of the heat sink is larger than the diameter of the substrate (700) and smaller than the inner diameter of the bushing (301).

18. 17. The CVD reactor of claim 16, wherein the length of the endothermic tube is greater than half the length of the bushing (301).

19. 17. The CVD reaction apparatus of claim 16, wherein the distance between the end of the heat absorbing cylinder close to one end of the substrate and the substrate is 20 mm to 100 mm.

20. The temperature control component (500) is A heat generating body (50); A heater (51) installed inside the heat generating body (50); a controller (53) located outside the cavity and connected to the heater (51); 11. The CVD reactor of claim 10, wherein the controller (53) controls the heater (51) to heat a central region of the cavity.

21. 21. The CVD reactor of claim 20, wherein the heater (51) includes a heating wire (52) extending through the interior of the connector (510) and out of the cavity.

22. The cavity further includes a top cover (200) disposed on the top of the cavity; 2. The CVD reactor of claim 1, wherein the gas supply (201) is installed in the top cover (200).

23. 1. A temperature control component for use in a CVD reactor cavity, comprising: a heating body disposed inside the cavity for heating a reaction gas in a central region of the cavity; and a connector for connecting the heat generating body and the cavity.

24. The temperature control component of claim 23 , wherein the heat generating body is disposed coaxially with the cavity.

25. The temperature control component of claim 24, wherein the connector includes an annular portion and a plurality of connecting rods spaced apart around the circumference of the heat generating body, one end connected to the heat generating body and the other end connected to the annular portion and fixedly connected to the cavity.

26. 26. The temperature control component of claim 25, wherein the heat generating body is a heat absorbing rod extending along the axial direction of the cavity, for absorbing heat emitted by an under-heater and a side heater installed in the CVD reaction apparatus, and for discharging the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

27. 27. The temperature control component according to claim 26, wherein the heat absorbing rod is generally cone-shaped.

28. 26. The temperature control component of claim 25, wherein the heat generating body is a heat absorbing cylinder extending along the axial direction of the cavity, absorbing heat emitted by an under-heater and a side heater installed in the CVD reaction apparatus, and dissipating the absorbed heat to the central region of the cavity so as to heat the reaction gas located in the central region of the cavity.

29. 30. The temperature control component of claim 28, wherein the diameter of the heat sink is equal to or greater than the diameter of a substrate being processed in the CVD reactor.

30. 24. The temperature control component according to claim 23, wherein the heat absorption rate of the heat generating body is greater than the heat absorption rate of the reaction gas.

31. The temperature control component of claim 25, wherein the heat generating body and the connector are made of at least one material of graphite, silicon carbide, tantalum carbide, or high-temperature resistant metals such as tungsten, molybdenum, and tantalum.

32. The temperature control component according to claim 25, characterized in that a silicon carbide and / or tantalum carbide coating layer is provided on the surfaces of the heat generating body and the connector.

33. A heater disposed inside the heat generating body; a controller located outside the cavity and connected to the heater; 27. The temperature control component of claim 26, wherein the controller controls the heater to heat a central region of the cavity.

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