Substrate processing apparatus and substrate processing method

The substrate processing apparatus and method address the challenge of real-time particle detection and control in batch type deposition systems by using a particle measurement sensor and control unit to adjust air flow or inert gas flow, thereby improving substrate quality.

JP2025518871AActive Publication Date: 2025-06-19WONIK IPS CO LTD
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Patent Information

Application Number
JP2024571979
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-01-04
Filing Date
2023-08-03
Publication Date
2025-06-19
Estimated Expiration
2043-08-03

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Abstract

The present invention is a substrate processing apparatus for processing a substrate. According to an embodiment of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus includes a reaction tube in which substrate processing is performed, a boat that is carried in and out through the reaction tube via a boat lifting unit and on which a plurality of substrates are placed in the vertical direction, a substrate loading unit in which a loading area is formed where the plurality of substrates are loaded and unloaded onto the boat through a substrate transfer robot, an outside air inflow unit that adjusts the amount of outside air flowing into the loading area, a gas control device that adjusts the injection amount of an inert gas, a particle measurement sensor that measures particle information in the loading area, and a control unit that adjusts one or more of the outside air inflow unit and the gas control device.
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Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a substrate processing apparatus and a substrate processing method for processing a substrate.

Background Art

[0002] Generally, semiconductor elements and display elements are manufactured through various processes such as thin film deposition and etching on a substrate, and a batch type deposition system is used as a system for processing the substrate.

[0003] In a batch type deposition system, a FOUP (Front Opening Unified Pod) that accommodates a plurality of substrates is carried into the system through a load port and can be stored in a stocker. Such a stocker is composed of a plurality of vertically stacked units in a shelf frame, and the FOUP stored in the stocker can be brought into close contact with a FIMS (Front-opening Interface Mechanical Standard) door unit by a transfer robot that moves along a vertically extended transfer robot rail.

[0004] After the FIMS is in close contact with the door unit, a substrate transfer robot receives a plurality of substrates using transfer forks with the FOUP having one open side, and the plurality of substrates can be stacked on a boat while the substrate transfer robot moves downward.

[0005] In the batch type deposition system as described above, a plurality of substrates can be loaded inside a substrate loading unit, a boat can be formed inside, and the plurality of substrates can be stacked on the boat in a loading area inside the substrate loading unit.

[0006] At this time, the loading area is an area where a plurality of substrates are exposed, and when particles are generated in the loading area, it can have a significant impact on the quality of the wafers. However, since particles in the loading area cannot be detected in real time and it is impossible for the user to grasp the particles, as a result, there is a problem that it is impossible to respond to wafer quality defects caused by the generation of unexpected particles.

Summary of the Invention

Problems to be Solved by the Invention

[0007] The present invention is for solving many problems including the above problems, and in order to remove particles inside the loading area for loading substrates, it aims to provide a substrate processing apparatus and a substrate processing method that execute a sequence capable of suppressing particles through controlling the air volume of the fan of a fan filter unit (FFU) or the flow rate of purge gas. However, the above problems are exemplary and do not limit the scope of the present invention thereby.

Means for Solving the Problems

[0008] According to an embodiment of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus includes a reaction tube having an opening formed at a lower portion thereof, where substrate processing is performed; a boat that is carried in and out through the reaction tube via a boat lifting unit and on which a plurality of substrates are placed in the vertical direction; a substrate loading unit disposed at a lower portion of the reaction tube and having a loading area formed therein, where the plurality of substrates are loaded and unloaded onto and from the boat through a substrate transfer robot; an outside air inflow unit formed on one side of the substrate loading unit, configured to allow outside air to flow into the loading area while communicating with the loading area and to adjust the amount of outside air flowing in; a gas control device configured to adjust an injection amount of an inert gas supplied into the loading area; a particle measurement sensor configured to measure particle information of the loading area; and a control unit configured to adjust at least one of the outside air inflow unit and the gas control device based on the particle information received from the particle measurement sensor so as to reduce particles in the loading area.

[0009] According to an embodiment of the present invention, the control unit may include a particle amount determination unit configured to compare an amount of particles measured by the particle measurement sensor with a preset reference value; and a particle size determination unit configured to determine a size of the particles measured by the particle measurement sensor when the particles are measured to be equal to or greater than the reference value.

[0010] According to an embodiment of the present invention, when particles larger than a preset size measured by the particle measurement sensor are measured to be equal to or greater than the reference value, the control unit can control the strength of the outside air inflow unit so as to increase an inflow amount of outside air into the loading area.

[0011] According to an embodiment of the present invention, when particles smaller than a preset size measured by the particle measurement sensor are measured to be equal to or greater than the reference value, the control unit can control the gas control device so as to increase an injection amount of the inert gas.

[0012] According to an embodiment of the present invention, when particles larger than a preset size are measured above a reference value and particles smaller than the preset size are measured above the reference value from the particle measurement sensor, the control unit drives the outside air inflow unit and the gas control device at predetermined time intervals, respectively, and controls to alternately increase the inflow amount of outside air into the loading area and increase the injection amount of the inert gas.

[0013] According to an embodiment of the present invention, the outside air inflow unit may be formed on one side of the loading area and include a fan filter unit for adjusting the amount of outside air flowing in from the outside air inflow unit.

[0014] According to an embodiment of the present invention, a substrate processing method is provided. The substrate processing method includes a process processing step of processing a plurality of substrates placed vertically through a boat lifting unit through an opening formed in the lower part of a reaction tube where substrate processing is performed, loading or unloading the plurality of substrates; a particle measurement step of measuring particle information in a loading area where the plurality of substrates are loaded and unloaded into and from the boat inside a substrate loading unit disposed below the reaction tube before or after the process processing step; and a control step of adjusting at least one of an outside air inflow unit for adjusting the amount of outside air flowing into the loading area and a gas control device for adjusting the injection amount of an inert gas supplied into the loading area so that particles in the loading area can be reduced according to the particle information measured in the particle measurement step.

[0015] According to an embodiment of the present invention, the control step may include a particle amount determination step of comparing the amount of particles measured in the particle measurement step with a preset reference value; and a particle size determination step of determining the size of the particles measured in the particle measurement step when the particles are measured above the reference value.

[0016] According to an embodiment of the present invention, the control step may include a fan filter unit control step of controlling the strength of the outside air inflow part so as to increase the inflow amount of the outside air into the loading area when particles larger than the size already set in the particle measurement step are measured to be equal to or greater than a reference value.

[0017] According to an embodiment of the present invention, the control step may include a gas supply control step of controlling the gas control device so as to increase the injection amount of the inert gas when particles smaller than the size already set in the particle measurement step are measured to be equal to or greater than a reference value.

Effect of the Invention

[0018] According to some embodiments of the present invention configured as described above, it is possible to monitor in real time particles of different sizes inside the loading area, and when particles are generated, the particles can be reduced through a suppression control algorithm.

[0019] In addition, by selectively driving the outside air control or the injection amount control of the inert gas by particles due to physical detachment and particles due to chemical reaction, and controlling in different ways depending on the cause of generation, it is possible to prevent the generation of additional particles, and thereby, there is an effect of improving the processing quality of the substrate. Of course, the scope of the present invention is not limited by such effects.

Brief Description of the Drawings

[0020]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5a

Figure 5b

Mode for Carrying Out the Invention

[0021] Hereinafter, with reference to the accompanying drawings, many preferred embodiments of the present invention will be described in detail.

[0022] Each embodiment of the present invention is provided to more fully explain the present invention to those having ordinary knowledge in the art. The following embodiments can be modified in many different forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to further enrich and complete the present disclosure and to fully convey the idea of the present invention to those skilled in the art. Also, the thickness and size of each layer in the drawings are exaggerated for the sake of convenience and clarity of explanation.

[0023] Hereinafter, each embodiment of the present invention will be described with reference to each drawing schematically showing an ideal embodiment of the present invention. In each drawing, for example, various deformations of the illustrated shape can be expected due to manufacturing techniques and / or tolerances. Therefore, the embodiments of the idea of the present invention should not be construed as being limited to the specific shape of the region illustrated in this specification, and should include, for example, changes in shape brought about during manufacturing.

[0024] FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a flowchart showing the drive of the substrate processing apparatus of FIG. 1, and FIG. 3 is a table showing the drive of the fan filter unit and the gas control device 80 according to the particle size measured by the substrate processing apparatus of the present invention.

[0025] First, the substrate processing apparatus according to an embodiment of the present invention can generally include a reaction tube 10, a boat 20, an outside air inflow part 70, a gas control device 80, a particle measurement sensor 40, and a control part 50.

[0026] As shown in FIG. 1, the reaction tube 10 has an opening formed at the lower part, can include a process tube that houses the boat 20 and where a plurality of substrates S are processed, and various components such as a gas supply part and a gas discharge part necessary for the vapor deposition process can be installed inside the reaction tube 10.

[0027] Specifically, the reaction tube 10 can be composed of an inner tube and an outer tube, and can be configured to include a heat-resistant material such as quartz. An exhaust port (not shown) for exhausting the inside is formed in the reaction tube 10, and the exhaust port can be connected to a pump (not shown) having pumping ability.

[0028] On one side of the reaction tube 10, a manifold where each gas supply pipe (not shown) for supplying gas into the reaction tube 10 is installed can be formed, and each gas supply pipe can be connected to a gas nozzle (not shown) extending upward from the inside of the reaction tube 10.

[0029] The boat 20 is carried in and out through the reaction tube 10 via the boat lifting unit 21, and a plurality of substrates S picked up through the substrate transfer robot are placed vertically thereon, and can move up and down with a plurality of substrates S stacked inside. At this time, when the boat 20 ascends, a support part can be hermetically coupled to the reaction tube 10.

[0030] When the loading of a plurality of substrates S into the boat 20 is completed, the boat 20 can be arranged in the reaction tube 10 while ascending. Each process gas is injected from the reaction tube 10, and a thin film can be vapor-deposited on the plurality of substrates S.

[0031] As shown in FIG. 1, the outside air inflow part 70 is formed on at least one side of the substrate loading part 100, and can include a blower fan and a filter part.

[0032] The outside air inlet portion 70 is a device that adjusts the amount of outside air flowing in from the inlet pipe.

[0033] For example, the outside air inlet portion 70 can include the plurality of blower fans formed on the side of the loading area A, and outside air can flow into the loading area A from outside the loading area A through the rotation of the blower fans. At this time, the amount of outside air flowing in can vary depending on the rotational intensity of the blower fans.

[0034] The outside air inlet portion 70 can include a filter portion that filters contaminants contained in the outside air flowing in from the outside before the outside air flows into the loading area A through the blower fans. The filter portion can be formed by being coupled to each of the plurality of blower fans, or can be formed so as to surround at least one surface of the frame to which the plurality of blower fans are coupled.

[0035] For example, the outside air inlet portion 70 can be formed on one side of the loading area A and can include a fan filter unit that adjusts the amount of outside air flowing in from the outside air inlet portion 70.

[0036] The outside air inlet portion 70 is formed on one side of the substrate loading portion 100, and outside air can be made to flow into the loading area A through an inlet pipe communicating with the loading area A.

[0037] The inlet pipe can be formed behind the blower fans on the side surface of the substrate loading portion 100, or can be formed above the rear of the blower fans so that the outside air flowing into the inlet pipe flows from top to bottom.

[0038] Further, an exhaust pipe 60 and a shut-off valve 61 may be formed in at least a part of the substrate loading unit 100 so that the internal gas in the loading area A can be exhausted to the outside. At this time, the exhaust pipe 60 can exhaust in all directions with a slit damper formed on the side surface, a T / R damper formed at the lower part, an L / A exhaust pipe formed at the upper part, etc.

[0039] The exhaust pipe 60 can be formed on all four sides of the substrate loading unit 100, and can induce a change in the flow of the loading area A by exhausting the air or gas in the loading area A, thereby inducing the discharge of particles remaining in the loading area A.

[0040] As shown in FIG. 1, the gas control device 80 can adjust the injection amount of the inert gas supplied into the loading area A.

[0041] Specifically, the gas control device 80 can be formed outside the loading area A and in at least a part of the flow path line connecting the gas supply unit 81 that supplies the inert gas and the loading area A.

[0042] The gas control device 80 is a gas control valve that shuts off the flow of the inert gas or shuts off the backflow of gas or outside air. For example, the gas control device 80 is a mass flow controller (MFC, Mass flow controller), which is a device that can accurately and quickly control the flow rate of the supplied inert gas. The gas control device 80 can be controlled by a control unit 50 described later.

[0043] The inert gas can include nitrogen gas and argon gas, and in addition, can include each gas that does not break easily because the gas molecule bond is strong or the atom itself does not chemically react stably.

[0044] As shown in FIG. 1, the particle measurement sensor 40 can include a device that measures particle information in the loading area A inside the substrate loading unit 100 where the reaction tube 10 and the boat 20 are formed.

[0045] Specifically, in order to measure the size and amount of particles present in the loading area A, the particle measurement sensor 40 can sample a part of the gas or air in the loading area A and measure the particle information included in the sampling. At this time, the particle information can include the size and amount of the particles included in the sampling.

[0046] For example, the particle measurement sensor 40 is formed inside the substrate loading unit 100, a part of the gas or air in the loading area A flows into the particle measurement sensor 40, and the size and amount of the particles included in the flowing-in gas or air can be measured. Preferably, the particle measurement sensor 40 is formed on one side of the substrate loading unit 100, samples the gas or air flowing into the sampling port 41 communicating with the loading area A as a sampling, measures the size and amount of the particles included in the sampling, and through this, can measure the particle information present in the loading area A.

[0047] The particle measurement sensor 40 is connected to the control unit 50 by wire or wirelessly, can record and store the particle information, and can transmit the particle information to the control unit 50.

[0048] The sampling port 41 can be formed as one or more collection ports that are located at the bottom of the loading area A such as the FIMS, the boat 20, and the transfer robot, and collect the particles that fall downward.

[0049] The control unit 50 can adjust one or more of the atmospheric and inert gas atmospheres inside the loading area A according to the particle information received from the particle measurement sensor 40 so as to reduce the particles in the loading area A.

[0050] Specifically, the control unit 50 can control the air volume output of the fan filter unit that adjusts the amount of outside air flowing into the loading area A to 0% to 100% according to the particle information measured by the particle measurement sensor 40. Also, the flow rate of the inert gas injected from the gas control device 80 that adjusts the injection amount of the inert gas in the loading area can be adjusted from 0 slm to 2,000 slm, and the fan filter unit and the gas control device 80 can be selectively controlled.

[0051] The control unit 50 can include a particle amount determination unit 51 that compares the amount of particles measured by the particle measurement sensor 40 with a preset reference value, and a particle size determination unit 52 that determines the size of the particles measured by the particle measurement sensor 40 when the particles are measured to be equal to or greater than the reference value.

[0052] Specifically, when particles larger than a preset size are measured by the particle measurement sensor 40 to be equal to or greater than the reference value, the control unit 50 can control the strength of the fan filter unit so as to increase the inflow amount of outside air into the loading area A.

[0053] For example, when it is determined that among the particles detected by the particle measurement sensor 40, the particles measured to be equal to or greater than the reference value by the particle amount determination unit 51 are larger than the size set by the particle size determination unit 52, the control unit 50 can control the strength of the fan filter unit to be driven stronger than the maintained state.

[0054] At this time, by strongly controlling the drive of the fan filter unit, the exhaust pipe including the slit damper, T / R damper, L / A, etc. described above is opened, and the particle concentration in the loading area A can be reduced.

[0055] Specifically, when particles larger than the set size are generated above the reference value, generally, physical detachment of the substance surface such as peeling and cracking of the surface has occurred, or it has occurred due to dust or a pollution source being introduced from the outside. Therefore, the control unit 50 controls the fan filter unit to be driven strongly, and by introducing outside air with a large air volume, foreign substances floating in the loading area A can be discharged to the outside.

[0056] In addition, when the control unit 50 measures particles smaller than the set size from the particle measurement sensor 40 above the reference value, the control unit 50 can control the gas control device 80 that adjusts the injection amount into the loading area A so as to increase the injection amount of the inert gas.

[0057] For example, when it is determined by the particle amount determination unit 51 that the particles measured above the reference value among the particles detected by the particle measurement sensor 40 are smaller than the size set by the particle size determination unit 52, the control unit 50 controls the gas control device 80, and the injection amount of the inert gas flowing into the loading area A can be increased.

[0058] At this time, the drive of the fan filter unit is maintained at the existing strength so that the inert gas can flow into the loading area A, the exhaust pipe including the slit damper, T / R damper, L / A, etc. described above is opened, and the particle concentration in the loading area A can be reduced.

[0059] Specifically, when particles smaller than the set size, for example, fine particles at the 0.1 μm level, are generated above the reference value, generally, the fume discharged from the substrate loading unit 100, for example, the reactants formed by the combination of elements and ions such as H+, OH−, Cn, etc. and oxygen element, so the control unit 50 controls to input a large amount of inert gas to suppress the formation of particles by chemical reaction, prevent the generation of particles, and discharge the generated particles.

[0060] Also, when dealing with it by introducing a large amount of outside air with a large air volume, the control unit 50 controls to increase the density of the inert gas to prevent the formation of oxides and carbon compounds.

[0061] When the control unit 50 measures that particles larger than the already set size from the particle measurement sensor 40 are above the reference value and particles smaller than the already set size are above the reference value, the control unit 50 can drive the fan filter unit and the gas control device 80 at predetermined time intervals respectively, and alternately increase the inflow amount of outside air into the loading area A and the injection amount of inert gas.

[0062] That is, when it is determined by the particle amount determination unit 51 that the measurement is above the reference value and it is determined by the particle size determination unit 52 that there are all particles larger and smaller than the already set size, the control unit 50 drives the fan filter unit to the maximum to exhaust the particles by physical separation, and increases the injection amount of the inert gas flowing into the loading area A by the gas control device 80 to exhaust the particles by chemical reaction.

[0063] At this time, after driving the fan filter unit for a certain period of time, it can be done alternately again while controlling the gas control device 80 for a certain period of time.

[0064] As shown in FIG. 2, the driving of the substrate processing apparatus according to the present invention is formed on one side of the substrate loading unit 100, and particles can flow into the sampling port 41 where the loading region A communicates with the particle measurement sensor 40.

[0065] Thereafter, the particle measurement sensor 40 can sample and measure a part of the gas or air in the loading region A. At this time, the particle amount determination unit 51 of the control unit 50 can determine whether the measured particles are equal to or greater than the reference value. When it is determined that the particles do not reach the reference value, the standard flow rate control state can be continuously maintained. That is, as in the case of C-1 in FIG. 3, the air volume of the fan filter unit is maintained in the standard state, the gas control device 80 does not inject, and the exhaust pipe can be controlled to be opened.

[0066] Next, it is possible to measure the particles of the continuously flowing-in sample, or to measure the particles sampled at a preset next cycle such as a fixed time or before and after a process.

[0067] In addition, when the particles measured by the particle amount determination unit 51 of the control unit 50 are determined to be equal to or greater than the reference value, the particle size determination unit 52 of the control unit 50 can determine the presence or absence of particles larger than the already set size.

[0068] When there are no particles larger than the already set size among the detected particles, that is, when the particles are smaller than or the same size as the already set size, the injection amount of the inert gas can be increased by the gas control device 80. That is, as in the case of C-2 in FIG. 3, the air volume of the fan filter unit is maintained in the standard state, the injection amount of the gas control device 80 is maximized, and the exhaust pipe can be controlled to be opened.

[0069] If there are particles among the detected particles that are larger than the already set size, the air volume of the fan filter unit can be strongly controlled. That is, as in the cases of C-3 and C-4 in FIG. 3, the air volume of the fan filter unit can be increased to the maximum speed and controlled to open the exhaust pipe.

[0070] At this time, the particle size determination unit 52 of the control unit 50 can determine the presence or absence of particles smaller than the already set size.

[0071] If there are no particles among the detected particles that are smaller than the already set size, the air volume of the fan filter unit is strongly maintained, and the gas control device 80 can either not inject the inert gas or maintain it in the standard flow rate control state. That is, as in the case of C-3 in FIG. 3, the air volume of the fan filter unit is increased to the maximum speed, the gas control device 80 does not inject, and it can be controlled to open the exhaust pipe.

[0072] Next, the particles of the continuously flowing-in sample can be measured, or the particles sampled in a preset next cycle such as a certain time or before and after a process can be measured.

[0073] If there are particles among the detected particles that are smaller than the already set size, the air volume of the fan filter unit is strongly maintained, and the injection amount of the inert gas can be increased by the gas control device 80. That is, as in the case of C-4 in FIG. 3, the air volume of the fan filter unit is increased to the maximum speed, the injection amount of the gas control device 80 is maximized, and it can be controlled to open the exhaust pipe.

[0074] Next, the particles of the continuously flowing-in sample can be measured, or the particles sampled in a preset next cycle such as a certain time or before and after a process can be measured.

[0075] FIG. 4 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0076] A substrate processing method according to an embodiment of the present invention can include a process processing stage (S100), a particle measurement stage (S200), and a control stage (S300).

[0077] As shown in FIG. 4, in the process processing stage (S100), a boat 20 on which a plurality of substrates S are placed in the vertical direction through a boat lifting unit 21 is carried in or out through an opening formed at the lower part of a reaction tube 10 where substrate processing is performed, and a plurality of substrates S are processed.

[0078] In the process processing stage (S100), a plurality of substrates S picked up through a substrate transfer robot are placed in the vertical direction of the boat 20, lifted and lowered through the boat lifting unit 21 in a stacked state inside, and carried into a reaction tube 10 formed as a process tube to process a plurality of substrates S.

[0079] The process processing stage (S100) can include a stage in which a support part is hermetically coupled to the reaction tube 10 when the boat 20 rises.

[0080] In the particle measurement stage (S200), before or after the process processing stage (S100), particle information in a loading area A is measured inside a substrate loading unit 100 where the reaction tube 10 and the boat 20 are formed using a particle measurement sensor 40.

[0081] As shown in FIG. 4, the particle measurement stage (S200) may be performed before the process processing stage (S100), and although not shown, it may also be performed after the process processing stage (S100) or during the process processing stage (S100).

[0082] The particle measurement step (S200) is formed inside the substrate loading unit 100, and a part of the gas or air in the loading area A flows into the particle measurement sensor 40, and the size and amount of the particles contained in the flowing gas or air are measured.

[0083] Preferably, in the particle measurement step (S200), the gas or air flowing into the sampling port 41 communicating with the loading area A is sampled, and the size and amount of the particles contained in the sampling are measured, and through this, the particle information existing in the loading area A is measured.

[0084] As shown in FIG. 4, in the control step (S300), according to the particle information measured in the particle measurement step (S200), the control unit 50 adjusts one or more of the atmospheric atmosphere and the inert gas atmosphere inside the loading area A so that the particles in the loading area A can be reduced. Specifically, it is a step of controlling the outside air inflow unit 70 that adjusts the amount of outside air flowing into the loading area A and the gas control device 80 that adjusts the injection amount of the inert gas into the loading area.

[0085] Specifically, the control step (S300) can include a particle amount determination step (S310) that compares the amount of particles measured in the particle measurement step (S200) with a preset reference value, and a particle size determination step (S320) that determines the size of the particles measured in the particle measurement step (S200) when the particles are measured to be equal to or more than the reference value.

[0086] The control step (S300) can include a fan filter unit control step (S330) and a gas supply control step (S340).

[0087] The fan filter unit control step (S330) is a step of controlling the strength of the outside air inflow part 70 so as to increase the inflow amount of the outside air into the loading area A when particles larger than the size already set in the particle measurement step (S200) are measured to be equal to or more than the reference value.

[0088] For example, among the particles detected in the particle measurement step (S200), when it is determined that the particles determined to be equal to or more than the reference value in the particle amount determination step (S310) are further larger than the size set in the particle size determination step (S320), the fan filter unit control step (S330) is a step of controlling the strength of the outside air inflow part 70, for example, the fan filter unit, to drive it stronger than the maintained state.

[0089] At this time, the fan filter unit control step (S330) further includes a step of opening the exhaust pipe including the above-described slit damper, T / R damper, L / A, etc. by strongly controlling the drive of the fan filter unit, and can reduce the particle concentration in the loading area A.

[0090] The gas supply control step (S340) is a step of controlling the gas control device 80 that adjusts the injection amount into the loading area A so as to increase the injection amount of the inert gas when particles smaller than the size already set in the particle measurement step (S200) are measured to be equal to or more than the reference value.

[0091] For example, among the particles detected in the particle measurement step (S200), when it is determined that the particles measured to be equal to or more than the reference value in the particle amount determination step (S310) are further smaller than the size set in the particle size determination step (S320), the gas supply control step (S340) is a step of controlling the gas control device 80 to increase the injection amount of the inert gas flowing into the loading area A.

[0092] At this time, the gas supply control step (S340) further includes a step of maintaining the driving of the outside air inflow part 70, for example, the fan filter unit, at the existing strength so that the inert gas can flow into the loading area A, and opening the exhaust pipe including the slit damper, T / R damper, L / A, etc. described above, and the particle concentration in the loading area A can be reduced.

[0093] Also, when both particles larger and smaller than the already set size are present in the particles detected in the particle measurement step (S200), the gas supply control step (S340) and the fan filter unit control step (S330) can be performed alternately.

[0094] Furthermore, when the detected particles are continuously detected above the reference value for a certain period of time, the boat 20 is carried out from the reaction tube 10, or the inflow of the substrate is stopped by the FIMS outside the substrate loading unit 100, and continuous control is performed so that no particles are detected in the loading area A, whereby a plurality of substrates S can be protected from the particles.

[0095] FIG. 5a and FIG. 5b are graphs showing changes in the amount of particles due to the driving of the outside air inflow part 70 and the gas control device 80 of the substrate processing apparatus according to an embodiment of the present invention.

[0096] Specifically, FIG. 5a is a graph showing the size of the particles detected by the particle measurement sensor 40 over time and the particles detected after the fan filter unit is driven. At this time, the size already set by the particle size determination unit 52 is 0.5 μm, and the standard flow rate control of the fan filter unit is 60%.

[0097] As shown in FIG. 5a, four to five particles having a size of 0.5 μm or more were detected at 300 sec, 500 sec, 800 sec, and 850 sec. Thereafter, at 900 sec, the fan filter unit was operated at 100% speed, and as a result, it was confirmed that no particles were detected by the particle measurement sensor 40. That is, through the maximum drive of the fan filter unit, the particles floating in the loading region A can be exhausted to the outside.

[0098] Further, FIG. 5b is a graph showing the size of the particles detected by the particle measurement sensor 40 over time and the particles detected after the gas control device 80 is driven. At this time, the size already set by the particle size determination unit 52 is 0.1 μm, and the standard flow rate control of the gas control device 80 is 600 slm.

[0099] As shown in FIG. 5b, three to five particles having a size of 0.1 μm were detected at 250 sec to 430 sec. Thereafter, at 450 sec, nitrogen gas of the gas control device 80 was injected at a flow rate of 1400 slm, and as a result, it was confirmed that no particles were detected by the particle measurement sensor 40. That is, by increasing the flow rate of the inert gas of the gas control device 80, the formation of particles due to chemical reactions can be suppressed, and the particles floating in the loading region A can be exhausted to the outside.

[0100] The substrate processing apparatus and the substrate processing method according to an embodiment of the present invention can monitor in real time the particles of different sizes inside the loading region, and can reduce the particles through a suppression control algorithm when the particles are generated. Further, by the particles due to physical detachment and the particles due to chemical reactions, the outside air inflow part 70 or the gas control device 80 is selectively controlled, and by controlling in different ways depending on the cause of generation, additional generation of particles can be prevented, and thereby the processing quality of the substrate can be improved.

[0101] The present invention has been described with reference to the embodiments shown in the drawings, which are merely exemplary, and those having ordinary knowledge in the relevant technical field will understand that various modifications and equivalent other embodiments will be possible hereinafter. Therefore, the true technical protection scope of the present invention should be determined by the technical idea of the appended claims.

Claims

1. A reaction tube having an opening formed at the lower part thereof and where substrate processing is performed, A boat that is carried in and out through the reaction tube via a boat lifting unit and on which a plurality of substrates are placed in the vertical direction, A substrate loading unit disposed at the lower part of the reaction tube and having a loading area formed therein where the plurality of substrates are loaded and unloaded onto the boat through a substrate transfer robot, An outside air inflow unit formed on one side of the substrate loading unit, allowing outside air to flow into the loading area while communicating with the loading area and adjusting the amount of outside air flowing in, A gas control device for adjusting the injection amount of an inert gas supplied into the loading area, A particle measurement sensor for measuring particle information in the loading area, and A control unit that adjusts one or more of the outside air inflow unit and the gas control device according to the particle information received from the particle measurement sensor so as to reduce particles in the loading area, A substrate processing apparatus comprising the above.

2. The control unit includes: A particle amount determination unit that compares the amount of particles measured by the particle measurement sensor with a preset reference value, and A particle size determination unit that determines the size of particles measured by the particle measurement sensor when the particles are measured to be equal to or greater than the reference value, The substrate processing apparatus according to Claim 1, comprising the above.

3. The control unit: When particles larger than a preset size measured by the particle measurement sensor are measured to be equal to or greater than the reference value, controls the strength of the outside air inflow unit so as to increase the inflow amount of outside air into the loading area, The substrate processing apparatus according to Claim 1.

4. The control unit: When particles smaller than the already set size are measured by the particle measurement sensor above the reference value, the gas control device is controlled to increase the injection amount of the inert gas. The substrate processing apparatus according to claim 1.

5. The control unit When particles larger than the already set size are measured by the particle measurement sensor above the reference value and particles smaller than the already set size are measured above the reference value, the outside air inflow unit and the gas control device are driven at predetermined time intervals, respectively, and the control is performed so that the increase in the inflow amount of outside air into the loading area and the increase in the injection amount of the inert gas are performed alternately. The substrate processing apparatus according to claim 1.

6. The outside air inflow unit A fan filter unit formed on one side of the loading area and adjusting the amount of outside air flowing in from the outside air inflow unit. The substrate processing apparatus according to claim 1, including the above.

7. A boat on which a plurality of substrates are placed vertically through a boat lifting unit is carried in or out through an opening formed in the lower part of a reaction tube where substrate processing is performed, and a process processing step of processing the plurality of substrates. Before or after the process processing step, in the inside of a substrate loading unit disposed in the lower part of the reaction tube, a particle measurement step of measuring particle information of a loading area where the plurality of substrates are loaded and unloaded onto the boat, and A control step of adjusting one or more of an outside air inflow unit that adjusts the amount of outside air flowing into the loading area and a gas control device that adjusts the injection amount of the inert gas supplied into the loading area so that the particles in the loading area can be reduced according to the particle information measured in the particle measurement step. A substrate processing method including the above.

8. The control step includes: a particle amount determination step of comparing the amount of particles measured in the particle measurement step with a preset reference value, and a particle size determination step of determining the size of the particles measured in the particle measurement step when the particles are measured to be equal to or greater than the reference value. The substrate processing method according to claim 7. The substrate processing method according to claim 7.

9. The control step includes: a fan filter unit control step of controlling the strength of the outside air inflow part so as to increase the inflow amount of the outside air into the inside of the loading area when particles larger than a preset size in the particle measurement step are measured to be equal to or greater than the reference value. The substrate processing method according to claim 7.

10. The control step includes: a gas supply control step of controlling the gas control device so as to increase the injection amount of the inert gas when particles smaller than a preset size in the particle measurement step are measured to be equal to or greater than the reference value. The substrate processing method according to claim 7.

Citation Information

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