Reticle handler isolation damper elements

Abstract

The system includes a first portion and a second portion of a lithography system, and a vibration damping system positioned between the first portion and the second portion, the vibration damping system including a damper holder that holds a set of X-direction dampers and a set of Y-direction dampers.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. patent application Ser. No. 63 / 435,192, filed Dec. 23, 2022, the entire contents of which are incorporated herein by reference.

[0002] This disclosure relates to vibration damping systems and methods, for example, one or more vibration dampers used to reduce dynamic disturbances in lithographic apparatus and systems. [Background technology]

[0003] A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus can, for example, project a pattern from a patterning device (e.g., a mask or reticle) onto a layer of radiation-sensitive material (photoresist, or simply "resist") provided on the substrate.

[0004]

[0004] To project a pattern onto a substrate, a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can be formed on the substrate. Lithographic apparatus using extreme ultraviolet (EUV) radiation having a wavelength in the range of 4 to 20 nm, e.g., 6.7 nm or 13.5 nm, can be used to form smaller features on a substrate than lithographic apparatus using radiation having a wavelength of, e.g., 193 nm.

[0005] At a certain throughput, the wafer stage experiences increasing accelerations that can cause dynamic disturbances throughout the lithography apparatus. Reticle handlers are subject to these dynamic disturbances, which can result in unidentified reticle position offsets. Excessive reticle misalignment during reticle transfer can lead to several dynamics-related failures, including repeatable errors over time and reticle breakage. Summary of the Invention

[0006]

[0006] It is therefore desirable to reduce the effects of acceleration and vibration on the reticle handler, and therefore on the reticle, in a reliable, uniform and efficient manner. For example, a lithographic apparatus may include a vibration damping system that reduces dynamic disturbances throughout the lithographic apparatus.

[0007] In some aspects, a system includes a first portion and a second portion of a lithography system, and a vibration damping system positioned between the first portion and the second portion, the vibration damping system including a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers.

[0008] In some aspects, a lithographic apparatus includes an illumination system, a patterning system, a projection system, a base frame, a reticle handler, and a vibration damping system. The illumination system is configured to generate a radiation beam. The patterning system includes a reticle and is configured to impart a pattern onto the beam. The projection system is configured to project the patterned beam onto a substrate. The reticle handler is disposed adjacent to the base frame and configured to move the reticle into and out of a reticle stage positioned between the patterning system and the projection system. The vibration damping system is positioned between the base frame and the reticle handler. The vibration damping system includes a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers.

[0009] In some aspects, the method includes damping dynamic disturbances between the first and second portions of the lithography system using a damping system positioned between the first and second portions, the damping system comprising a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers.

[0010]

[0010] Further features of various aspects of the present disclosure are described in detail below with reference to the accompanying drawings. It should be noted that the present disclosure is not limited to the specific aspects described herein. Such aspects described herein are for illustrative purposes only. Based on the teachings contained herein, further aspects will be apparent to those skilled in the art. [Brief explanation of the drawings]

[0011]

[0011] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate the present disclosure and, together with the description herein, further explain the principles of the present disclosure and enable a person skilled in the relevant art to make and use the embodiments described herein.

[0012] [Figure 1A] 1 illustrates a lithographic apparatus according to some embodiments. [Figure 1B] 1 illustrates a lithographic apparatus according to some embodiments. [Figure 2]

[0013] 1 illustrates a reticle stage according to some embodiments. [Figure 3] 1 illustrates a reticle stage according to some embodiments. [Figure 4]

[0014] 1 illustrates a reticle exchange apparatus according to some embodiments. [Figure 5] 1 illustrates a reticle exchange apparatus according to some embodiments. [Figure 6A]

[0015] 1A-1D illustrate a reticle exchange apparatus in different configurations, according to some embodiments. [Figure 6B] 1 illustrates a reticle exchange apparatus in different configurations according to some embodiments. [Figure 6C] 1 illustrates a reticle exchange apparatus in different configurations according to some embodiments. [Figure 7]

[0016] 1 illustrates a reticle exchange apparatus according to some embodiments. [Figure 8]

[0017] 1 illustrates a lithographic apparatus according to some embodiments. [Figure 9]

[0018] 1 illustrates an isolation system according to some embodiments. [Figure 10A]

[0019] 1 illustrates a vibration damping system according to some embodiments. [Figure 10B] 1 illustrates a vibration damping system according to some embodiments. [Figure 10C]

[0020] 1 illustrates a vibration damper according to some embodiments. [Figure 10D]

[0020] A vibration damper according to some embodiments is shown.

[0013]

[0021] Features of the present disclosure will become more apparent from the detailed description set forth below in conjunction with these drawings. In the drawings, like reference symbols identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and / or structurally similar elements. Additionally, the left-most digit(s) of a reference number generally identifies the drawing in which that reference number first appears. Unless otherwise noted, the drawings provided throughout this disclosure should not be construed as being to scale. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0022] References to embodiments described herein and referred to herein as "one embodiment," "an embodiment," "exemplary embodiment," or "example embodiment" indicate that the embodiment described herein may include a particular feature, structure, or characteristic, but not all embodiments necessarily include that particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with one embodiment, it is understood that it is within the knowledge of one of ordinary skill in the art that that feature, structure, or characteristic also applies in connection with other embodiments, whether or not explicitly stated.

[0015]

[0023] Spatially relative terms such as "beneath," "below," "lower," "above," "on," "upper," and the like may be used herein to facilitate describing the relationship of one element or feature shown in the figures to another element or feature(s). The spatially relative terms are intended to encompass various orientations of the device in use or operation in addition to the orientation shown in the figures. The device may be otherwise oriented (rotated 90 degrees or at another orientation) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0016]

[0024] The terms "about," "approximately," and the like may be used herein to indicate a given quantitative value that may vary based on a particular technique. Based on a particular technique, the terms "about," "approximately," and the like may indicate a given quantitative value that may vary within, for example, 10 to 30% of that value (e.g., ±10%, ±20%, or ±30% of that value).

[0017]

[0025] Aspects of the present disclosure may be implemented in hardware, firmware, software, or any combination thereof. Aspects of the present disclosure may also be implemented as instructions stored on a computer-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, machine-readable media may include read-only memory (ROM), random-access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, electrical, optical, acoustic, or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Furthermore, firmware, software, routines, and / or instructions may be described herein as performing particular actions. However, it will be understood that such description is merely for convenience and that such actions result from a computing device, processor, controller, or other device executing the firmware, software, routines, instructions, etc. The term “machine-readable medium” may be substituted with similar words, such as “computer program product,” “computer-readable medium,” “non-transitory computer-readable medium,” etc. The term "non-transitory" may be used herein to characterize one or more forms of computer-readable media other than transitory propagating signals.

[0018]

[0026] Before describing such aspects in more detail, it is useful to present an example environment in which aspects of the present disclosure can be implemented.

[0019]

[0027] Lithography System Example

[0028] 1A and 1B show lithographic apparatus 100 and lithographic apparatus 100', respectively, in which aspects of the present disclosure may be implemented. Lithographic apparatus 100 and lithographic apparatus 100' each include an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., deep ultraviolet radiation or extreme ultraviolet radiation), a support structure (e.g., a mask table) MT configured to support a patterning device (e.g., a mask, reticle, or dynamic patterning device) MA and connected to a first positioner PM configured to accurately position the patterning device MA, and a substrate table (e.g., a wafer table) WT configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate W. Lithographic apparatus 100 and 100' may also include a projection system PS configured to project a pattern imparted to radiation beam B by patterning device MA onto a target portion C of the substrate W (e.g., comprising one or more dies). In lithographic apparatus 100, patterning device MA and projection system PS are reflective. In lithographic apparatus 100', patterning device MA and projection system PS are transmissive.

[0020]

[0029] The illumination system IL may include various types of optical components, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, to direct, shape or control the radiation beam B.

[0021]

[0030] The support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA relative to a reference frame, the design of at least one of lithographic apparatuses 100 and 100′, and other conditions, such as whether or not the patterning device MA is held in a vacuum environment. The support structure MT may use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may, for example, be a frame or a table, which may be fixed or movable. By using sensors, the support structure MT can ensure that the patterning device MA is at a desired position, for example with respect to the projection system PS.

[0022]

[0031] The term "patterning device" MA should be interpreted broadly to refer to any device that can be used to impart a radiation beam B with a pattern in its cross-section so as to create a pattern in a target portion C of a substrate W. The pattern imparted to the radiation beam B may correspond to a particular functional layer in a device being created in the target portion C to form an integrated circuit.

[0023]

[0032] A patterning device may be transmissive (such as in lithographic apparatus 100' of FIG. 1B) or reflective (such as in lithographic apparatus 100 of FIG. 1A). Examples of patterning devices MA include reticles, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern to a radiation beam B, which is reflected by the matrix of small mirrors.

[0024]

[0033] The term "projection system" PS can encompass any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optics, or any combination thereof, as appropriate for the exposure radiation being used, or other factors such as the use of an immersion liquid or the use of a vacuum on the substrate W. A vacuum environment may be used for EUV or electron beam radiation, as other gases may be too absorbing of the radiation or electrons. Therefore, a vacuum environment may be provided throughout the beam path using a vacuum wall and vacuum pumps.

[0025]

[0034] Lithographic apparatus 100 and / or lithographic apparatus 100' may be of a type having two (dual stage) or more substrate tables WT (and / or two or more mask tables). In such a "multi-stage" machine, the additional substrate tables WT may be used in parallel, or preparatory steps may be performed on one or more tables while another substrate table or tables WT are used for exposure. In some circumstances, the additional tables need not be substrate tables WT.

[0026]

[0035] The lithographic apparatus may also be of a type in which at least a portion of the substrate is covered by a liquid having a relatively high refractive index (e.g., water), so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term "immersion," as used herein, does not imply that a structure, such as a substrate, must be submerged in liquid. For example, a liquid may be placed between the projection system and the substrate during exposure.

[0027]

[0036] 1A and 1B, the illuminator IL receives radiation from a radiation source SO. The source SO and the lithographic apparatus 100, 100' may be separate physical entities, for example if the source SO is an excimer laser. In such cases, the source SO is not considered to form part of the lithographic apparatus 100 or 100', and the radiation beam B is delivered from the source SO to the illuminator IL using a beam delivery system BD (of FIG. 1B) that may include, for example, appropriate directing mirrors and / or beam expanders. In other cases, the source SO may be an integral part of the lithographic apparatus 100, 100', for example if the source SO is a mercury lamp. A radiation system may include the source SO, the illuminator IL, and / or the beam delivery system BD.

[0028]

[0037] The illuminator IL may include an adjuster AD (in Figure 1B) for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator may be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO (in Figure 1B). The illuminator IL can be used to condition the radiation beam B so that it has a desired uniformity and intensity distribution in its cross-section.

[0029]

[0038] Referring to Figure 1A, a radiation beam B is incident on a patterning device (e.g., mask) MA, which is held on a support structure (e.g., mask table) MT, and is patterned by the patterning device MA. In lithographic apparatus 100, the radiation beam B is reflected by the patterning device (e.g., mask) MA. After reflecting from the patterning device (e.g., mask) MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam B onto a target portion C of a substrate W. A second positioner PW and a position sensor IF2 (e.g., an interferometer device, a linear encoder, or a capacitance sensor) may be used to accurately move the substrate table WT (e.g., to position different target portions C in the path of the radiation beam B). Similarly, a first positioner PM and a further position sensor IF1 may be used to accurately position the patterning device (e.g., mask) MA relative to the path of the radiation beam B. Patterning device (eg mask) MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.

[0030]

[0039] 1B, a radiation beam B is incident on a patterning device (e.g., mask MA), which is held on a support structure (e.g., mask table MT), and is patterned by the patterning device. After passing through the mask MA, the radiation beam B passes through a projection system PS, which focuses the beam onto a target portion C of a substrate W. The projection system has a pupil conjugate PPU with respect to an illumination system pupil IPU. Portions of radiation emerge from the intensity distribution in the illumination system pupil IPU, pass through this mask pattern without being affected by diffraction at the mask pattern, and produce an image of the intensity distribution in the illumination system pupil IPU.

[0031]

[0040] The projection system PS projects an image of the mask pattern MP, which is formed on a photoresist layer covering the substrate W by diffracted beams generated from the mark pattern MP by radiation from the intensity distribution. For example, the mask pattern MP may include an array of lines and spaces. Diffraction of radiation at this array, other than the zeroth diffraction order, produces diffracted beams redirected by a change in direction perpendicular to the lines. The non-diffracted beams (i.e., the so-called zeroth-order diffracted beams) traverse the pattern without a change in propagation direction. The zeroth-order diffracted beams traverse an upper lens or lens group above the projection system PS, upstream from the pupil conjugate PPU of the projection system PS, to reach the pupil conjugate PPU. The portion of the intensity distribution in the plane of the pupil conjugate PPU that is associated with the zeroth-order diffracted beam is an image of the intensity distribution in the illumination system pupil IPU of the illumination system IL. For example, the aperture device PD is positioned in or substantially in a plane containing the pupil conjugate PPU of the projection system PS.

[0032]

[0041] The projection system PS is positioned to capture (e.g., using a lens or lens group L) the zeroth, first, and / or higher-order diffracted beams (not shown). In some embodiments, the resolution-enhancing effect of dipole illumination can be exploited by using dipole illumination to image a line pattern extending in a direction perpendicular to the line. For example, a first-order diffracted beam interferes with a corresponding zeroth-order diffracted beam at the level of the wafer W, creating an image of the line pattern MP with the highest possible resolution and process window (i.e., the available depth of focus combined with an acceptable exposure dose deviation). In some embodiments, astigmatism can be reduced by providing a radiation pole (not shown) in the opposite quadrant of the illumination system pupil IPU. Furthermore, in some embodiments, astigmatism can be reduced by blocking the zeroth-order beam in the projection system pupil conjugate PPU associated with the radiation pole in the opposite quadrant. This is described in more detail in U.S. Pat. No. 7,511,799 B2, issued March 31, 2009, and incorporated herein by reference in its entirety.

[0033]

[0042] The second positioner PW and a position sensor IFD (e.g. an interferometric device, a linear encoder or a capacitive sensor) may be used to accurately move the substrate table WT (e.g. to position various target portions C in the path of the radiation beam). Similarly, the first positioner PM and a further position sensor (not shown in FIG. 1B) may be used to accurately position the mask MA with respect to the path of the radiation beam B (e.g. after mechanical retrieval from a mask library or during a scan).

[0034]

[0043] In general, movement of the mask table MT may be realized using a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. The mask MA and substrate W may be aligned using mask alignment marks M1 and M2 and substrate alignment marks P1 and P2. Although the (illustrated) substrate alignment marks occupy dedicated target portions, the substrate alignment marks may be located in spaces between the target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.

[0035]

[0044] The mask table MT and patterning device MA may be located within a vacuum chamber V, where an in-vacuum robot IVR may be used to move a patterning device such as a mask into and out of the vacuum chamber V. Alternatively, when the mask table MT and patterning device MA are outside the vacuum chamber, an out-vacuum robot similar to the in-vacuum robot IVR may be used for various transfer operations. Both the in-vacuum robot and the out-vacuum robot may be calibrated for smooth transfer of any payload (e.g. a mask) to a fixed kinematic mount of a transfer station.

[0036]

[0045] Lithographic apparatus 100 and 100' can be used in at least one of the following modes.

[0037]

[0046] 1. In step mode, the support structure (e.g. mask table) MT and substrate table WT are kept essentially stationary, while the entire pattern imparted to the radiation beam B is projected onto a target portion C at one time (i.e. a single static exposure), while the substrate table WT is then shifted in the X and / or Y direction so that a different target portion C can be exposed.

[0038]

[0047] 2. In scan mode, the support structure (e.g. mask table) MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam B is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure (e.g. mask table) MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS.

[0039]

[0048] 3. In another mode, the support structure (e.g. mask table) MT is kept substantially stationary, holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam B is projected onto a target portion C. A pulsed radiation source SO can be employed, with the programmable patterning device being updated as required after each movement of the substrate table WT, or between successive radiation pulses during a scan. This mode of operation is readily adaptable to maskless lithography employing a programmable patterning device such as a programmable mirror array.

[0040]

[0049] Combinations and / or variations on the above described modes of use or entirely different modes of use may also be employed.

[0041]

[0050] In some embodiments, lithographic apparatus 100 includes an extreme ultraviolet (EUV) source configured to generate an EUV radiation beam for EUV lithography. Typically, the EUV source is configured in a radiation system, and a corresponding illumination system is configured to condition the EUV radiation beam of the EUV source.

[0042]

[0051] In some embodiments, lithographic apparatus 100' includes a deep ultraviolet (DUV) source configured to generate a beam of DUV radiation for DUV lithography. Typically, the DUV source is configured within a radiation system, and a corresponding illumination system is configured to condition the DUV radiation beam of the DUV source.

[0043]

[0052] Reticle stage example

[0053] 2 and 3 illustrate a reticle stage 200 according to some embodiments. The reticle stage 200 may include a stage top surface 202, a stage bottom surface 204, stage sides 206, and a clamp 300. In some embodiments, the reticle stage 200 with the clamp 300 may be implemented within the lithographic apparatus 100 and / or lithographic apparatus 100'. For example, the reticle stage 200 may be a support structure MT in the lithographic apparatus 100 and / or lithographic apparatus 100'. In some embodiments, the clamp 300 may be disposed on the stage top surface 202. For example, as shown in FIG. 2, the clamp 300 may be disposed in the center of the stage top surface 202 with the clamp surface 302 facing vertically away from the stage top surface 202.

[0044]

[0054] In some lithographic apparatuses, such as lithographic apparatus 100 and / or lithographic apparatus 100′, a reticle stage 200 with clamps 300 can be used to hold and position a reticle 408 for scanning and patterning operations. In one example, the reticle stage 200 can rely on a powerful drive, a large balance mass, and a heavy frame to support the reticle stage 200. In one example, the reticle stage 200 has a large inertia and can weigh more than 500 kg to propel and position a reticle 408 weighing approximately 0.5 kg. To achieve reciprocating motion of the reticle 408, such as that typically found in lithographic scanning or patterning operations, acceleration and deceleration forces can be provided by linear motors that drive the reticle stage 200.

[0045]

[0055] 2 and 3, the reticle stage 200 may include a first encoder 212 and a second encoder 214 for positioning operations. For example, the first and second encoders 212 and 214 may be interferometers. The first encoder 212 may be mounted along a first direction (e.g., a lateral direction (i.e., X direction) of the reticle stage 200). The second encoder 214 may be mounted along a second direction (e.g., a longitudinal direction (i.e., Y direction) of the reticle stage 200). In some embodiments, as shown in FIGS. 2 and 3, the first encoder 212 may be orthogonal to the second encoder 214.

[0046]

[0056] As shown in FIGS. 2 and 3 , the reticle stage 200 may include a clamp 300. The clamp 300 is configured to hold a reticle 408 in a fixed plane on the reticle stage 200. The clamp 300 includes a clamping surface 302 and may be disposed on the stage top surface 202. In some embodiments, the clamp 300 can hold and secure an object using mechanical, vacuum, electrostatic, or other suitable clamping techniques. In some embodiments, the clamp 300 may be an electrostatic clamp, which may be configured to electrostatically clamp (i.e., hold) an object, such as a reticle 408, in a vacuum environment. For EUV production performed in a vacuum environment, it may be difficult to use a vacuum clamp to clamp a mask or reticle. Instead, an electrostatic clamp can be used. For example, the clamp 300 may include an electrode, a resistive layer on the electrode, a dielectric layer on the resistive layer, and a burl protruding from the dielectric layer. In use, a voltage of, for example, several kilovolts may be applied to the clamp 300. Current then flows through the resistive layer, causing a voltage at the top surface of the resistive layer to be substantially the same as the voltage at the electrodes, creating an electric field. Coulomb forces, or the attractive forces between oppositely charged particles, also attract objects to clamp 300 and hold them in place. In some embodiments, clamp 300 can be a rigid material, such as a metal, a dielectric, a ceramic, or a combination thereof.

[0047]

[0057] Example of a reticle changer

[0058] 4, 5, 6A, 6B, 6C, and 7 illustrate some embodiments of a reticle exchange apparatus 401. Reticle exchange apparatus 401 can be configured to minimize reticle exchange time, particle generation, and contact forces or stresses from clamps 300 and / or reticle 408 to reduce damage to clamps 300 and reticle 408 and increase the overall throughput of the reticle exchange process in, for example, lithographic apparatus 100 and / or lithographic apparatus 100′.

[0048]

[0059] 4 and 5, reticle exchange apparatus 401 may include reticle stage 200, clamp 300, and in-vacuum robot 400. In-vacuum robot 400 may include reticle handler 402.

[0049]

[0060] In some embodiments, reticle handler 402 can be a rapid exchange device (RED) that is configured to efficiently rotate and minimize reticle exchange time. For example, reticle handler 402 can save time by moving multiple reticles from one position to another substantially simultaneously, rather than serially.

[0050]

[0061] 4, reticle handler 402 may include one or more reticle handler arms 404. Reticle handler arm 404 may include a reticle base plate 406. Reticle base plate 406 may be configured to hold an object, such as a reticle 408.

[0051]

[0062] In some embodiments, reticle base plate 406 can be an extreme ultraviolet interior pod (EID) for the reticle. In some embodiments, reticle base plate 406 includes reticle base plate surface 407 and reticle 408 includes reticle back surface 409.

[0052]

[0063] 4 and 5, reticle base plate 406 can hold reticle 408 such that reticle base plate surface 407 and reticle back surface 409 face the stage top surface 202 and clamping surface 302, respectively. For example, reticle base plate surface 407 and reticle back surface 409 can face vertically opposite stage top surface 202 and clamping surface 302.

[0053]

[0064] As shown in FIG. 5, reticle exchange apparatus 401 can include reticle exchange area 410, which is the cross-sectional area between clamp 300, reticle 408, reticle base plate 406, and reticle handler arm 404 during the reticle exchange process.

[0054]

[0065] 4, reticle handler arms 404 may be positioned symmetrically about reticle handler 402. For example, reticle handler arms 404 may be spaced about 90 degrees, about 120 degrees, or about 180 degrees from each other. In some embodiments, reticle handler arms 404 may be positioned asymmetrically about reticle handler 402. For example, two reticle handler arms 404 may be spaced about 135 degrees from each other, while another two reticle handler arms 404 may be spaced about 90 degrees from each other.

[0055]

[0066] In one example, during a reticle exchange process, reticle handler arm 404 of reticle handler 402 positions reticle 408 on reticle base plate 406 toward clamps 300 in reticle exchange area 410. As described above, the transfer of the reticle from reticle handler 402 to clamps 300 involves adjusting the reticle vertical distance offset (i.e., Z offset) and the reticle tilt offset (i.e., R X Offset and R Y The calibration includes unidentified reticle position offsets, including offsets. Tilt or excessive misalignment between the clamps 300 and reticle 408 can cause particle generation and, over time, potentially damage the reticle 408 or clamps 300. The reticle backside 409 and clamping surface 302 can be aligned flush for final handoff. Even with calibration, variations still exist due to reticle mechanical and positioning tolerances, which can result in large corner impacts and unpredictable initial contact between the clamps 300 and reticle 408.

[0056]

[0067] In one example, the reticle exchange process involves lowering the reticle stage 200 with clamps 300, starting from its furthest position from the reticle handler 402 and moving as close as possible to the reticle 408 until the clamps 300 contact the reticle 408, accounting for any possible offset and / or tilt. During the reticle exchange process, the reticle stage 200 with clamps 300 can be adjusted in multiple stages of movement.

[0057]

[0068] 6A-6C, reticle exchanger 401 can include clamps 300, a reticle 408, and a reticle base plate 406. The multi-stage movement can occur in four stages: (1) approach, (2) initial contact, (3) full contact, and (4) application of voltage to the clamps.

[0058]

[0069] 6A, reticle exchange apparatus 401 can be in approach configuration 20, where clamps 300 can be adjusted substantially vertically (i.e., in the Z direction) toward reticle back surface 409. In approach configuration 20, clamps 300 are powered down (i.e., no voltage is applied), and reticle handler 402 adjusts the vertical (i.e., Z direction) and tilt (i.e., Rx and Rx) of reticle handler arm 404 in reticle exchange area 410. Y Deactivate the servo motors (i.e. Z, Rx and R) (rotation around X direction and rotation around Y direction respectively). Y ) is braked, and rotation around the Z axis (i.e., R Z ) will be activated.

[0059]

[0070] 6B, the reticle exchange apparatus 401 can be in an initial contact configuration 30, where the clamps 300 can be adjusted substantially vertically (i.e., in the Z direction) toward the reticle backside 409 until they contact the reticle backside 409. In the initial contact configuration 30, the clamps 300 are powered down, and after they contact the reticle backside 409 (e.g., a corner of the reticle 408), they can be rotated or tilted about the contact point (i.e., Rx and R Y ).

[0060]

[0071] Third, as shown in FIG. 6C, the reticle exchange apparatus 401 can be in a full contact configuration 40, where the clamp 300 can be rotationally adjusted about the contact point toward the reticle backside 409 until it makes full contact with the reticle backside 409 (i.e., Rx and R Y In the full contact configuration 40, the clamp 300 is de-energized and the clamp 300 is in full contact with the reticle backside 409 (e.g., all four corners of the reticle 408) and is flush with the reticle backside 409.

[0061]

[0072] In some embodiments, in the full contact configuration 40, the clamp 300 contacts all four corners of the reticle 408 and continues to move substantially vertically (ie, in the Z direction) until a mechanical force of at least 5N is reached.

[0062]

[0073] Fourth, with the clamp surface 302 and the reticle back surface 409 aligned and coplanar, the clamp 300 is powered on (i.e., voltage is applied to the clamp 300) and the reticle 408 is held within a fixed plane on the clamp 300.

[0063]

[0074] 5, the reticle exchange apparatus 401 can include a clamp controller 360. The clamp controller 360 can be coupled to the clamp 300 and configured to control the position of the clamp 300. For example, the clamp controller 360 can be configured to control the reticle stage 200 to enable compliant movement of the clamp 300. In some embodiments, the clamp controller 360 controls the servo motors or servo actuators (i.e., X-direction, Y-direction, Z-direction, Rx, Rx) of the reticle stage 200. Y , R Z ), and / or clamp 300. For example, clamp controller 360 may be coupled to the reticle stage 200, including clamp 300, for translational movement along the x-, y-, and z-axes (i.e., in the X-, Y-, and Z-directions) and rotation about the x-, y-, and z-axes (i.e., Rx, Rz). Y , R Z ), where the x-, y-, and z-axes are Cartesian coordinates.

[0064]

[0075] 7 illustrates a reticle exchange apparatus 401 according to some embodiments. Reticle exchange apparatus 401 can be configured to reduce the effects of vibrations between parts of the lithographic apparatus, which can be used, for example, to reduce damage to reticle 408 and increase the overall throughput of the reticle exchange process in, for example, lithographic apparatus 100 and / or lithographic apparatus 100′.

[0065]

[0076] In some embodiments, reticle exchange apparatus 401 can include an in-vacuum robot 400. In-vacuum robot 400 can include a reticle handler 402. Reticle handler 402 can include one or more reticle handler arms 404. Reticle handler arm 404 can include a reticle base plate 406. Reticle base plate 406 can be configured to hold an object, such as a reticle 408.

[0066]

[0077] In some embodiments, reticle exchange apparatus 401 may include a load port LP that can be used to place reticles 408 within the vacuum environment occupied by in-vacuum robot 400. Reticle exchange apparatus 401 may include an internal reticle inspection module IRISS for identifying and inspecting reticles 408. Reticle exchange apparatus 401 may include an internal reticle library IRL for storing spare reticles 408 to be used in the reticle exchange process.

[0067]

[0078] In some embodiments, the reticle exchange apparatus 401 may include a turret TU that acts as a transition point between the in-vacuum robot 400 and the reticle stage RS. In one example, during a reticle exchange process, the reticle handler arm 404 of the reticle handler 402 aligns the reticle base plate 406 with an internal pre-alignment station IPA configured to adjust the transfer position between the in-vacuum robot 400 and the turret TU using sensors. Once the internal pre-alignment station IPA approves the transfer position between the in-vacuum robot 400 and the turret TU, the reticle handler 402 places the reticle 408 on the turret TU. The turret TU may include a lower pre-alignment station LPA configured to adjust the transfer position between the turret TU and the reticle stage RS using sensors. Once the lower pre-alignment station LPA approves the transfer position between the turret TU and the reticle stage RS, the turret TU places the reticle 408 on the reticle stage RS.

[0068]

[0079] The handoff of the reticle from the reticle handler 402 to the turret TU involves an unaccounted reticle position offset. Excessive misalignment between the turret TU and the reticle 408 can damage the reticle 408 over time.

[0069]

[0080] Examples of vibration control systems

[0081] 8 illustrates a lithographic apparatus 800 according to some embodiments. Lithographic apparatus 800 may be an embodiment of lithographic apparatus 100 and / or lithographic apparatus 100'.

[0070]

[0082] In some embodiments, lithographic apparatus 800 may include an illuminator IL configured to condition a radiation beam (e.g., deep ultraviolet radiation or extreme ultraviolet radiation). The illuminator IL may include various types of optical components, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, to direct, shape, or control the radiation beam.

[0071]

[0083] In some embodiments, lithographic apparatus 800 may include a reticle stage RS configured to support a patterning device (e.g., a reticle). The reticle stage RS may use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterning device. The reticle stage may include, for example, a frame or a table, which may be fixed or movable. The reticle handler RH is disposed adjacent to the reticle stage RS and configured to move the reticle into and out of the reticle stage RS.

[0072]

[0084] In some embodiments, lithographic apparatus 800 may include a base frame BF configured to support various components of lithographic apparatus 800. For example, a metrology frame MF may be mounted on the base frame BF. The metrology frame MF may include position measuring devices such as alignment sensors for inspecting the substrate before exposure.

[0073]

[0085] In some embodiments, the lithographic apparatus 800 may include a wafer handler WH configured to load and unload each substrate onto a wafer stage WS, which may be configured to hold a substrate (e.g., a resist-coated wafer).

[0074]

[0086] At a certain throughput, the wafer stage WS may experience increasing accelerations. These accelerations may spread dynamic disturbance energy 802 throughout the lithographic apparatus 800. As shown in FIG. 8 , the flow of dynamic disturbance energy 802 begins within the wafer stage WS, travels through the base frame BF, and leads to the reticle handler RH. In some embodiments, the reticle handler RH can be considered the primary recipient of dynamic disturbance energy 802 coming from other modules, such as the wafer stage WS.

[0075]

[0087] In some embodiments, the dynamic disturbance energy 802 can cause the reticle handler RH to encounter dynamics-related problems. For example, the reticle handler RH can experience reticle alignment errors and overlay-related index degradation (DLO) caused by excessive reticle displacement during the reticle transfer process. In one example, reticle acceleration can damage the reticle. In some embodiments, the reticle can be severely damaged if the collision force between the reticle and a sub-module (e.g., a reticle storage position) is significantly amplified during the reticle transfer process due to either the added extra acceleration or the reticle displacement on the gripper and / or sub-module (referred to as "reticle walking").

[0076]

[0088] In some embodiments, vibrations generated within the wafer stage WS can be transmitted through rigid and compliant connecting structures (such as the base frame BF) into the reticle handler RH, but isolation damping can mitigate these vibrations.

[0077]

[0089] In some embodiments, lithographic apparatus 800 can include an isolation system 804 positioned between two portions of lithographic apparatus 800, which can neutralize the deleterious effects of dynamic disturbance energy 802. Isolation system 804 can comprise a structure configured to perform constrained layer damping (CLD), in which vibrations can be minimized by a layer of damping material sandwiched between layers of rigid material. In some embodiments, isolation system 804 can be positioned between reticle handler RH and base frame BF. For example, by replacing the “rigid mount” between reticle handler RH and base frame BF with CLD, isolation system 804 can isolate the entire reticle handler RH module from external dynamic disturbances, such as dynamic disturbance energy 802 from wafer stage WS.

[0078]

[0090] 9 shows a perspective view of an isolation system 804 in a lithographic apparatus 800 according to some embodiments. In some embodiments, the isolation system 804 may include a solid spacer 900 configured to hold a vibration damping system 902. In the illustrated example, four vibration damping systems 902-1 to 902-4 may be used. It will be understood that m vibration damping systems 902, namely 902-1 to 902-m, may be used.

[0079]

[0091] In some embodiments, the solid spacer 900 may be positioned between the base frame BF and the reticle handler RH. In some embodiments, the solid spacer 900 may have a horseshoe shape. Of course, any other shape is contemplated, depending, for example, on the application or environment. In some embodiments, the first through fourth vibration damping systems 902-1 through 902-4 may be installed within the solid spacer 900 such that each of the four vibration damping systems 902 is located at an end or corner of the solid spacer 900. With this exemplary configuration, the first through fourth vibration damping systems 902 can be positioned between two portions of the lithographic apparatus 800. In some embodiments, the first through fourth vibration damping systems 902 may be positioned at the ends of two sections of the two portions of the lithographic apparatus 800.

[0080]

[0092] 10A shows a perspective view of a vibration damping system 902 according to some embodiments. In some embodiments, the vibration damping system 902 can include a damper holder 1000, which can be a bracket having a predetermined stiffness. In some embodiments, the damper holder 1000 can have an outwardly flared U-shaped frame. The damper holder 1000 can include a cross beam support wall 1002 that fills the outwardly flared U-shape. In some embodiments, the cross beam support wall 1002 can be configured with a circular depression in its surface.

[0081]

[0093] In some embodiments, the vibration damping system 902 can include first and second pairs of parallel vibration dampers 1004-1 a,b and 1004-2 a,b, which are connected in series by a vibration damper holder 1000 and oriented such that the first pair of vibration dampers 1004-1 a,b are perpendicular to the second pair of vibration dampers 1004-2 a,b. In some embodiments, each pair of parallel vibration dampers 1004 can provide vibration damping and stiffness in a respective lateral direction (X or Y). In this example, the first pair of parallel vibration dampers 1004-1 a,b can absorb dynamic energy propagating in the X direction, and the second pair of parallel vibration dampers 1004-2 a,b can absorb dynamic energy propagating in the Y direction.

[0082]

[0094] In the illustrated example, four vibration dampers 1004 may be used in vibration damping system 902. It will be appreciated that m vibration dampers 1004 (i.e., 1004-1 to 1004-m), where m is an integer greater than or equal to 1, may be arranged in a series or parallel configuration within vibration damping system 902 to absorb dynamic energy propagating in the lateral direction (X or Y). Additionally or alternatively, those skilled in the art will appreciate that vibration dampers 1004 may be used in connection with alternative applications to reduce dynamic disturbances at various locations throughout lithographic apparatus 100 and / or lithographic facility 100′.

[0083]

[0095] 10B shows an exploded perspective view of a vibration damping system 902 according to some embodiments. In some embodiments, the vibration damping system 902 can include fasteners 1006 configured to hold the components of each vibration damper 1004 together and connect the vibration damper 1004 to the vibration damper holder 1000. In some embodiments, the fasteners 1006 can be bolts, screws, nails, clips, rotatable cams, etc. In some embodiments, each vibration damper 1004 can use any amount of fasteners 1006 sufficient to hold the vibration damper 1004 together and connect the vibration damper 1004 to the vibration damper holder 1000. In this exemplary embodiment, each vibration damper 1004 can use eight fasteners 1006.

[0084]

[0096] 10C shows a perspective view of a vibration damper 1004 according to some embodiments. The vibration damper 1004 can have a variety of dimensions depending on the load and desired characteristics. In some embodiments, the vibration damper 1004 can have an overall height of 162 mm, a compliant region height of 130 mm, a width of 120 mm, an overall thickness of 40 mm, and a compliant region thickness of 24 mm.

[0085]

[0097] In some embodiments, the vibration damper 1004 may include a rigid girder 1008 configured to have an I-shape. The girder 1008 may be a rigid material, such as metal. The girder 1008 may be surrounded by a pair of parallel flexures 1010 configured to be the outer layer of the vibration damper 1004. The parallel flexures 1010 may be a rigid material, such as metal. The flexures 1010 may have various dimensions depending on the load and boundary conditions. In some embodiments, each flexure 1010 may have a thickness of 7.5 mm. Each flexure 1010 may be optimized to have a predetermined amount of stiffness and strength to support a static load while being compliant enough to deflect when dynamic energy passes through the flexure 1010. In some embodiments, the flexures 1010 may be connected to the girder 1008 by fasteners 1006 configured to connect the vibration damper 1004 to the vibration damper holder 1000.

[0086]

[0098] FIG. 10D shows an exploded perspective view of a vibration damper 1004 according to some embodiments. In one example, the girders 1008 and parallel flexures 1010 can surround parallel viscoelastic (VE) sheets 1012 configured to absorb dynamic energy as an inner layer of the vibration damper 1004. The VE sheets 1012 can be a thermoplastic elastomer such as Viton® SCVBR manufactured by DuPont Performance Elastomers. The VE sheets 1012 can have various dimensions depending on the load and boundary conditions. For example, the VE sheets 1012 can cover all or part of the inner surface area of ​​the girders 1008 and the parallel flexures 1010. In some embodiments, each VE sheet 1012 can have a thickness of 3 mm. This exemplary orientation allows the VE sheets 1012 to absorb dynamic energy and convert this dynamic energy into heat during load-unload cycles.

[0087]

[0099] In some embodiments, the vibration dampers 1004 may be assembled using fasteners 1014 on the ends of the vibration dampers 1004 that are not connected to the vibration damper holder 1000. In some embodiments, the fasteners 1014 may be threaded inserts, pins, etc. In some embodiments, each vibration damper 1004 may use any amount of fasteners 1014 sufficient to hold the vibration dampers 1004 together. In this exemplary embodiment, each vibration damper 1004 may use eight fasteners 1014.

[0088]

[0100] As used herein, terms such as "radiation," "beam," "light," "illumination," and the like can be used to refer to one or more types of electromagnetic radiation, such as ultraviolet (UV) radiation (e.g., having a wavelength λ of 365, 248, 193, 157, or 126 nm), extreme ultraviolet (EUV or soft X-ray) radiation (e.g., having a wavelength in the range of 5 to 100 nm, e.g., 13.5 nm), or X-rays operating below 5 nm, as well as particle beams such as ion beams or electron beams. Generally, radiation having a wavelength between about 400 and about 700 nm is considered visible radiation, and radiation having a wavelength between about 780 and 3000 nm (or longer) is considered IR radiation. UV refers to radiation having a wavelength between about 100 and 400 nm. In lithography, the term "UV" also applies to wavelengths that can be produced by mercury discharge lamps, i.e., G-line at 436 nm, H-line at 405 nm, and / or I-line at 365 nm. Vacuum UV, or VUV (i.e., UV absorbed by gases), refers to radiation having a wavelength of approximately 100-200 nm. Deep UV (DUV) typically refers to radiation having a wavelength in the range of 126 nm to 428 nm, and in some embodiments, excimer lasers can generate DUV radiation for use in lithography equipment. For example, radiation having a wavelength in the range of 5-20 nm should be understood to refer to radiation having any wavelength band at least part of which is within the range of 5-20 nm.

[0089]

[0101] Various embodiments of the present systems and methods are disclosed in the following list of numbered clauses: 1. A first portion and a second portion of a lithography system; a vibration damping system positioned between the first portion and the second portion; the damping system includes a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers; system. 2. The system of clause 1, wherein the first part is a base frame and the second part is a reticle handler. 3. The system of clause 1, wherein the vibration damper holder is a bracket having a predetermined stiffness. 4. The system described in clause 3, wherein the vibration damper holder is an outwardly projecting U-shaped frame having a cross beam support wall. 5. The system of clause 1, wherein each of the set of X-direction vibration dampers and the set of Y-direction vibration dampers comprises a first vibration damper and a second vibration damper positioned in series. 6. The system of clause 5, wherein the set of X-direction vibration dampers is connected perpendicular to the set of Y-direction vibration dampers. 7. The system of clause 1, wherein each of the set of X-direction vibration dampers and the set of Y-direction vibration dampers comprises a metal I-girder frame surrounded by an inner layer of viscoelastic material constrained by an outer layer of metal flexures. 8. The system of clause 7, wherein the flexures are configured to have a predetermined stiffness to deflect dynamic energy while supporting a static load. 9. The system of clause 7, wherein the viscoelastic material is configured to absorb kinetic energy and convert the kinetic energy into heat during a load-unload cycle. 10. The system of clause 1, wherein the first to fourth vibration damping systems are positioned between the first and second parts. 11. The system of clause 10, wherein the first to fourth vibration damping systems are positioned at the ends of two sections, the first part and the second part. 12. An illumination system configured to generate a beam of radiation; a patterning system configured to impart a pattern onto the beam, the patterning system comprising a reticle; a projection system configured to project the patterned beam onto a substrate; and A base frame; a reticle handler adjacent to the base frame configured to move a reticle onto or off a reticle stage positioned between the patterning system and the projection system; a vibration damping system positioned between the base frame and the reticle handler, the vibration damping system comprising a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers; 1. A lithographic apparatus comprising: 13. A lithographic apparatus according to clause 12, wherein the vibration damper holder is a bracket having a predetermined stiffness. 14. The device according to clause 13, wherein the damper holder is an outwardly projecting U-shaped frame having a cross beam support wall. 15. The apparatus of clause 12, wherein each of the set of X-direction vibration dampers and the set of Y-direction vibration dampers comprises a first vibration damper and a second vibration damper positioned in series. 16. The apparatus of clause 15, wherein the set of X-direction vibration dampers is connected perpendicular to the set of Y-direction vibration dampers. 17. The apparatus of clause 12, wherein each of the set of X-direction vibration dampers and the set of Y-direction vibration dampers comprises a metal I-girder frame surrounded by an inner layer of viscoelastic material constrained by an outer layer of metal flexures. 18. The apparatus of clause 17, wherein the flexures are configured to have a predetermined stiffness to deflect dynamic energy while supporting a static load. 19. The apparatus of clause 17, wherein the viscoelastic material is configured to absorb kinetic energy and convert the kinetic energy into heat during a load-unload cycle. 20. Using a vibration damping system positioned between the first and second portions of the lithography system, damping dynamic disturbances between the first and second portions; the damping system includes a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers; method.

[0090]

[0102] Although some aspects of the present disclosure are described herein in the context of a lithography apparatus in IC manufacturing, it should be understood that the lithography apparatus described herein can be used in other applications, such as, for example, the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, LCDs, thin-film magnetic heads, etc. As will be appreciated by those skilled in the art, in such other applications, any references to a “wafer” or “die” as used herein may be considered specific examples of the more general terms “substrate” or “target portion,” respectively. The substrate may be processed, before or after exposure, for example, in a track unit (a tool that typically applies a resist layer to the substrate and develops the exposed resist) and / or a metrology unit. Where applicable, aspects disclosed herein may be applied to such and other substrate processing tools. Furthermore, a substrate may be processed multiple times, for example, to create a multi-layer IC, and therefore the term substrate as used herein may also refer to a substrate already including multiple processing layers.

[0091]

[0103] Furthermore, while some aspects of the present disclosure are described in the context of optical lithography, it should be understood that aspects of the present disclosure are not limited to optical lithography. For example, in imprint lithography, a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device is pressed into a layer of resist supplied to the substrate, where the resist is cured by electromagnetic radiation, heat, pressure, or a combination thereof. The patterning device is then moved out of the resist after the resist has hardened, leaving a pattern in the resist. Imprint lithography apparatus may require a vibration damping system, as disclosed above, to ensure that dynamic disturbances do not damage the patterning device.

[0092]

[0104] It is to be understood that the phraseology or terminology herein is for the purpose of description and not of limitation, and thus should be interpreted by one of ordinary skill in the art in light of the teachings herein.

[0093]

[0105] The present disclosure has been described above using functional building blocks that illustrate the implementation of specific functions and their relationships. The boundaries of these functional building blocks have been arbitrarily defined herein for the convenience of description. Other boundaries may be defined as long as the specific functions and their relationships are appropriately performed. The above description of specific embodiments fully reveals the general nature of the present disclosure, so that others, applying the ordinary knowledge of those skilled in the art, can easily modify the specific embodiments and / or apply them to various applications without undue experimentation, without departing from the general concept of the present disclosure. Therefore, such applications and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments, based on the teachings and guidance herein.

[0094]

[0106] It should be understood that it is the "Detailed Description" section, and not the "Summary" and "Abstract" sections, that should be used to interpret the claims. The "Summary" and "Abstract" sections may describe one or more exemplary aspects of the disclosure, but not all, contemplated by the inventors, and are therefore not intended to limit the scope of the disclosure and the appended claims in any way. The breadth and scope of the protected subject matter should not be limited by any of the above-described aspects, but should instead be defined in accordance with the following claims and their equivalents.

Claims

1. a first portion and a second portion of a lithography system; a vibration damping system positioned between the first portion and the second portion; the damping system comprises a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers; system.

2. the first portion is a base frame; The system of claim 1 , wherein the second part is a reticle handler.

3. The system of claim 1 , wherein the damper holder is a bracket having a predetermined stiffness.

4. The system of claim 3 , wherein the damper holder is an outwardly flared U-shaped frame having cross-beam support walls.

5. each of the set of X-direction dampers and the set of Y-direction dampers comprises a first damper and a second damper positioned in series; The system of claim 1 , wherein the set of X-direction vibration dampers is connected perpendicular to the set of Y-direction vibration dampers.

6. each of the set of X-direction dampers and the set of Y-direction dampers comprises a metal I-shaped girder frame surrounded by an inner layer of viscoelastic material constrained by an outer layer of metal flexures; the flexure is configured to have a predetermined stiffness to deflect dynamic energy while supporting a static load; The system of claim 1 , wherein the viscoelastic material is configured to absorb kinetic energy and convert the kinetic energy into heat during a load-unload cycle.

7. the first to fourth vibration damping systems are positioned between the first portion and the second portion; The system of claim 1 , wherein the first through fourth vibration control systems are positioned at ends of two sections of the first and second portions.

8. an illumination system configured to generate a beam of radiation; a patterning system configured to impart a pattern onto the beam, the patterning system comprising a reticle; a projection system configured to project the patterned beam onto a substrate; and A base frame; a reticle handler adjacent to the base frame configured to move a reticle onto or off a reticle stage positioned between the patterning system and the projection system; a vibration damping system positioned between the base frame and the reticle handler, the vibration damping system comprising a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers; 1. A lithographic apparatus comprising:

9. The apparatus of claim 8 , wherein the damper holder is a bracket having a predetermined stiffness.

10. 10. The apparatus of claim 9, wherein the damper holder is an outwardly flared U-shaped frame having cross-beam support walls.

11. each of the set of X-direction dampers and the set of Y-direction dampers comprises a first damper and a second damper positioned in series; 9. The apparatus of claim 8, wherein the set of X-direction vibration dampers is connected perpendicular to the set of Y-direction vibration dampers.

12. 9. The apparatus of claim 8, wherein each of the set of X-direction dampers and the set of Y-direction dampers comprises a metal I-girder frame surrounded by an inner layer of viscoelastic material constrained by an outer layer of metal flexures.

13. 13. The device of claim 12, wherein the flexures are configured with a predetermined stiffness to deflect dynamic energy while supporting a static load.

14. The apparatus of claim 12, wherein the viscoelastic material is configured to absorb kinetic energy and convert the kinetic energy into heat during a load-unload cycle.

15. damping dynamic disturbances between a first portion and a second portion of the lithography system using a damping system positioned between the first portion and the second portion; the damping system comprises a damper holder configured to hold a set of X-direction dampers and a set of Y-direction dampers; method.

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