Magnetic sensor and method of manufacturing the same

Abstract

To increase the occupation area of a magnetoresistance effect element.SOLUTION: The magnetic sensor 1 includes a plurality of yokes, a plurality of MR elements 50, and a plurality of bridge circuits. The plurality of yokes include a plurality of first yokes 40 located at the same position in a direction parallel to the Z direction. The plurality of bridge circuits include a first bridge circuit 110 and a second bridge circuit 120 that are located at different positions from each other in a direction parallel to the Z direction and are arranged to sandwich the plurality of first yokes 40. The first bridge circuit 110 and the second bridge circuit 120 are connected in parallel to each other.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor including a plurality of yokes and a plurality of magnetoresistive elements, and a method for manufacturing the same. [Background technology]

[0002] In recent years, magnetic sensors have been used in a variety of applications. A known magnetic sensor uses a spin-valve magnetoresistive element provided on a substrate. A spin-valve magnetoresistive element has a fixed magnetization layer with a fixed magnetization direction, a free layer with a magnetization direction that can change depending on the direction of an applied magnetic field, and a gap layer disposed between the fixed magnetization layer and the free layer.

[0003] Also known as a magnetic sensor is one in which a yoke made of a soft magnetic material is provided near a magnetoresistive element. The yoke is used to increase the strength of an applied magnetic field or change the direction of the applied magnetic field. For example, Patent Document 1 discloses a technology in which a magnetoresistive element is sandwiched between a pair of magnetic films made of a soft magnetic material. The pair of magnetic films increases the strength of the magnetic field that the magnetoresistive element receives.

[0004] Patent Document 2 also discloses a technology in which a plurality of yokes are used to convert a magnetic field perpendicular to the surface of a substrate into a magnetic field parallel to the surface of the substrate, and the magnetic field is applied to a plurality of magnetoresistive effect elements. Each of the plurality of yokes has a shape that is elongated in one direction, and receives an input magnetic field and generates an output magnetic field. A plurality of magnetoresistive effect elements are arranged on both sides of each of the plurality of yokes. The magnetic sensor includes a wiring section that connects the plurality of magnetoresistive effect elements arranged along the longitudinal direction of each of the plurality of yokes in series. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-127736 [Patent Document 2] Japanese Patent Application Publication No. 2019-174196 Summary of the Invention [Problem to be solved by the invention]

[0006] Increasing the area occupied by the magnetoresistive effect elements in the magnetic sensor (the total area of ​​the magnetoresistive effect elements) is an effective way to increase the sensitivity of the magnetic sensor. Meanwhile, miniaturization of the magnetic sensor is also required as devices incorporating magnetic sensors become smaller. Increasing the area occupied by the magnetoresistive effect elements or miniaturizing the magnetic sensor requires increasing the length of the wiring for electrically connecting multiple magnetoresistive effect elements or reducing the width of the wiring. This results in an increase in the resistance of the wiring, which reduces the sensitivity of the magnetic sensor. This problem is particularly pronounced in magnetic sensors that include wiring that serially connects multiple magnetoresistive effect elements arranged along a structure that is long in one direction, such as a yoke.

[0007] Furthermore, in a magnetic sensor including multiple yokes, increasing the area occupied by the magnetoresistive effect element increases the number of magnetoresistive effect elements, which in turn increases the number of yokes. As a result, magnetic sensors including multiple yokes are larger than magnetic sensors without yokes. This reduces the number of magnetic sensors that can be fabricated from one wafer, resulting in a problem of higher costs for magnetic sensors including multiple yokes.

[0008] The present invention has been made in consideration of such problems, and its purpose is to provide a magnetic sensor that can increase the area occupied by the magnetoresistive effect elements while reducing the resistance value of the wiring that electrically connects multiple magnetoresistive effect elements. [Means for solving the problem]

[0009] The magnetic sensor of the present invention includes a plurality of yokes each made of a soft magnetic material, a plurality of magnetoresistive elements configured to detect magnetic fields induced by the plurality of yokes, and a plurality of bridge circuits each formed by the plurality of magnetoresistive elements and configured to generate at least one detection signal. The plurality of yokes include a plurality of first yokes arranged at the same position in a first direction. The plurality of bridge circuits include a first bridge circuit and a second bridge circuit arranged at different positions from each other in the first direction and sandwiching the plurality of first yokes. The first bridge circuit and the second bridge circuit are connected in parallel to each other. [Effects of the Invention]

[0010] In the magnetic sensor of the present invention, the first bridge circuit and the second bridge circuit are arranged at different positions in the first direction and sandwich the first yokes. The first bridge circuit and the second bridge circuit are connected in parallel. This makes it possible to reduce the resistance of the wiring electrically connecting the magnetoresistive elements and increase the area occupied by the magnetoresistive elements. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view showing a magnetic sensor according to a first embodiment of the present invention. [Figure 2] FIG. 1 is an explanatory diagram schematically illustrating a magnetic sensor according to a first embodiment of the present invention. [Figure 3] 1 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a first embodiment of the present invention. [Figure 4] 1 is a perspective view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 5] 1 is a side view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 6] FIG. 1 is a plan view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 7] 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 8] FIG. 6 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a second embodiment of the present invention. [Figure 9] FIG. 10 is a perspective view showing a part of a magnetic sensor according to a second embodiment of the present invention. [Figure 10] FIG. 10 is a side view showing a part of a magnetic sensor according to a second embodiment of the present invention. [Figure 11] FIG. 10 is a plan view showing a part of a magnetic sensor according to a second embodiment of the present invention. [Figure 12] FIG. 10 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a third embodiment of the present invention. [Figure 13] FIG. 10 is a perspective view showing a part of a magnetic sensor according to a third embodiment of the present invention. [Figure 14] FIG. 10 is a side view showing a part of a magnetic sensor according to a third embodiment of the present invention. [Figure 15] FIG. 10 is a plan view showing a part of a magnetic sensor according to a third embodiment of the present invention. [Figure 16] FIG. 11 is an explanatory diagram showing the magnetization directions of the magnetization fixed layers of the first and third resistance units in the third embodiment of the present invention. [Figure 17] FIG. 11 is an explanatory diagram showing the magnetization directions of the magnetization fixed layers of the second and fourth resistor units in the third embodiment of the present invention. [Figure 18] FIG. 10 is a perspective view showing a part of a magnetic sensor according to a fourth embodiment of the present invention. [Figure 19] FIG. 10 is a side view showing a part of a magnetic sensor according to a fourth embodiment of the present invention. [Figure 20] FIG. 10 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a fifth embodiment of the present invention. [Figure 21] FIG. 13 is an explanatory diagram showing the magnetization directions of the magnetization fixed layers of the first and third resistance units in the fifth embodiment of the present invention. [Figure 22]FIG. 13 is an explanatory diagram showing the magnetization directions of the magnetization fixed layers of the second and fourth resistor units in the fifth embodiment of the present invention. [Figure 23] FIG. 13 is a side view showing a part of a modified example of the magnetic sensor according to the fifth embodiment of the present invention. [Figure 24] FIG. 13 is a perspective view showing a yoke according to a sixth embodiment of the present invention. [Figure 25] FIG. 13 is a side view showing a modified example of the yoke in the sixth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0012] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a schematic configuration of a magnetic sensor 1 according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a plan view showing the magnetic sensor 1. Fig. 2 is an explanatory diagram schematically showing the magnetic sensor 1. Fig. 3 is a circuit diagram showing the circuit configuration of the magnetic sensor 1.

[0013] The magnetic sensor 1 according to this embodiment is used, for example, as part of a geomagnetic sensor. The magnetic sensor 1 includes a plurality of magnetoresistive elements 50 and a plurality of bridge circuits configured by the plurality of magnetoresistive elements 50. Each of the plurality of bridge circuits is configured to generate at least one detection signal. Hereinafter, the magnetoresistive elements 50 will be referred to as MR elements 50.

[0014] In this embodiment, the magnetic sensor 1 includes a first bridge circuit 110 and a second bridge circuit 120 as multiple bridge circuits. The first bridge circuit 110 and the second bridge circuit 120 are connected in parallel with each other. The first bridge circuit 110 includes a first resistor unit R11, a second resistor unit R12, a third resistor unit R13, and a fourth resistor unit R14. The second bridge circuit 120 includes a first resistor unit R21, a second resistor unit R22, a third resistor unit R23, and a fourth resistor unit R24. Each of the resistor units R11 to R14 and R21 to R24 is configured by electrically connecting multiple MR elements 50 out of the multiple MR elements 50.

[0015] 1, the magnetic sensor 1 further includes a substrate 5. The substrate 5 is provided with the resistor portions R11 to R14 and R21 to R24.

[0016] Here, the X direction, Y direction, and Z direction are defined as shown in FIG. 1. The X direction, Y direction, and Z direction are perpendicular to one another. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. In this embodiment, the direction perpendicular to the surface of the substrate 5 is defined as the Z direction.

[0017] In the following, a position at the end of the Z direction relative to a certain reference position will be referred to as "above," and a position on the opposite side of "above" relative to a certain reference position will be referred to as "below." Furthermore, with regard to the components of magnetic sensor 1 and the components of magnetic sensors according to other embodiments, the surface located at the end of the Z direction will be referred to as the "top surface," and the surface located at the end of the -Z direction will be referred to as the "bottom surface." Furthermore, the expression "when viewed from a specified direction (e.g., the Z direction)" means viewing an object from a position away from the specified direction or a direction parallel to the specified direction.

[0018] Each of the first bridge circuit 110 and the second bridge circuit 120 is configured to detect a magnetic field component of the magnetic field to be detected in a direction parallel to the X direction, and to generate at least one detection signal corresponding to the intensity of the magnetic field component.

[0019] Next, the arrangement of the resistor portions R11 to R14 and R21 to R24 will be described with reference to FIG. 1. FIG. 1 shows an example of the arrangement of the resistor portions R11 to R14 and R21 to R24 on the substrate 5. In FIG. 1, the rectangular regions marked with the symbols R11 and R21 indicate the regions where the first resistor portions R11 and R21 are arranged. In this embodiment, the first bridge circuit 110 and the second bridge circuit 120 are arranged at different positions in a direction parallel to the Z direction. Therefore, the first resistor portion R11 and the first resistor portion R21 are arranged at different positions in a direction parallel to the Z direction in the rectangular regions marked with the symbols R11 and R21. Furthermore, the first resistor portion R11 and the first resistor portion R21 are arranged so as to overlap each other when viewed from the Z direction. The first resistor portion R21 may be arranged above the first resistor portion R11.

[0020] Similarly, the rectangular regions marked with the symbols R12 and R22 in FIG. 1 indicate regions where the second resistor portions R12 and R22 are arranged. The second resistor portion R12 and the second resistor portion R22 are arranged at different positions in a direction parallel to the Z direction in the rectangular regions marked with the symbols R12 and R22. Furthermore, the second resistor portion R12 and the second resistor portion R22 are arranged so as to overlap each other when viewed from the Z direction. The second resistor portion R22 may be arranged above the second resistor portion R12.

[0021] Similarly, the rectangular regions marked with the symbols R13 and R23 in Fig. 1 indicate regions where the third resistor portions R13 and R23 are arranged. The third resistor portion R13 and the third resistor portion R23 are arranged at different positions in the direction parallel to the Z direction in the rectangular regions marked with the symbols R13 and R23. Furthermore, the third resistor portion R13 and the third resistor portion R23 are arranged so as to overlap each other when viewed from the Z direction. The third resistor portion R23 may be arranged above the third resistor portion R13.

[0022] Similarly, the rectangular regions marked with the symbols R14 and R24 in Fig. 1 indicate regions where the fourth resistor portions R14 and R24 are arranged. The fourth resistor portion R14 and the fourth resistor portion R24 are arranged at different positions in the direction parallel to the Z direction in the rectangular regions marked with the symbols R14 and R24. Furthermore, the fourth resistor portion R14 and the fourth resistor portion R24 are arranged so as to overlap each other when viewed from the Z direction. The fourth resistor portion R24 may be arranged above the fourth resistor portion R14.

[0023] 1, the first and second resistor portions R11 and R12 (first and second resistor portions R21 and R22) are aligned in a direction parallel to the X direction along the Y-direction edge of the substrate 5. The second resistor portion R12 (second resistor portion R22) is disposed ahead of the first resistor portion R11 (first resistor portion R21) in the X direction.

[0024] The third and fourth resistor portions R13, R14 (third and fourth resistor portions R23, R24) are arranged in a direction parallel to the X direction along the edge of the substrate 5 in the -Y direction. The fourth resistor portion R14 (fourth resistor portion R24) is arranged ahead of the third resistor portion R13 (third resistor portion R23) in the -X direction. The third resistor portion R13 (third resistor portion R23) is also arranged ahead of the second resistor portion R12 (second resistor portion R22) in the -Y direction. The fourth resistor portion R14 (fourth resistor portion R24) is arranged ahead of the first resistor portion R11 (first resistor portion R21) in the -Y direction.

[0025] The arrangement of the resistor portions R11 to R14 and R21 to R24 on the substrate 5 is not limited to the example shown in Fig. 1. For example, the first to fourth resistor portions R11 to R14 (first to fourth resistor portions R21 to R24) may be arranged in a predetermined order in a direction parallel to the X direction or in a direction parallel to the Y direction.

[0026] Next, the connection relationships of the multiple components of the magnetic sensor 1 will be described with reference to Figures 1 to 3. One end of each of the first and fourth resistors R11 and R14 is connected to a connection point P11. One end of each of the second and third resistors R12 and R13 is connected to a connection point P12. The other end of each of the first and second resistors R11 and R12 is connected to a connection point P13. The other end of each of the third and fourth resistors R13 and R14 is connected to a connection point P14.

[0027] One end of each of the first and fourth resistor sections R21 and R24 is connected to a connection point P21. One end of each of the second and third resistor sections R22 and R23 is connected to a connection point P22. The other end of each of the first and second resistor sections R21 and R22 is connected to a connection point P23. The other end of each of the third and fourth resistor sections R23 and R24 is connected to a connection point P24.

[0028] The magnetic sensor 1 further includes a power supply terminal V1, a ground terminal G1, a first signal output terminal E11, and a second signal output terminal E12. As shown in FIG. 1, the power supply terminal V1, the ground terminal G1, the first signal output terminal E11, and the second signal output terminal E12 are provided on a substrate 5. The connection points P11 and P21 are connected to the power supply terminal V1. The connection points P12 and P22 are connected to the ground terminal G1. The connection points P13 and P23 are connected to the first signal output terminal E11. The connection points P14 and P24 are connected to the second signal output terminal E12.

[0029] In terms of the circuit configuration, the first resistor units R11 and R21 are arranged between the power supply terminal V1 and the first signal output terminal E11. In addition, in terms of the circuit configuration, the first resistor units R11 and R21 are connected in parallel. Note that in this application, the expression "in terms of the circuit configuration" is used to refer to the arrangement on a circuit diagram, not the arrangement in a physical configuration.

[0030] The second resistor units R12 and R22 are arranged between the ground terminal G1 and the first signal output terminal E11 in terms of the circuit configuration, and are connected in parallel to each other in terms of the circuit configuration.

[0031] The third resistor units R13 and R23 are arranged between the ground terminal G1 and the second signal output terminal E12 in terms of the circuit configuration, and are connected in parallel to each other in terms of the circuit configuration.

[0032] The fourth resistor units R14 and R24 are arranged between the power supply terminal V1 and the second signal output terminal E12 in terms of the circuit configuration, and are connected in parallel to each other in terms of the circuit configuration.

[0033] The magnetic sensor 1 further includes a connection electrode 31 connected to the power supply terminal V1, a connection electrode 32 connected to the ground terminal G1, a connection electrode 33 connected to the first signal output terminal E11, and a connection electrode 34 connected to the second signal output terminal E12. At least a portion of each of the connection electrodes 31 to 34 extends in a direction parallel to the Z direction. The number of connection electrodes 31 to 34 is the same as the total number of the power supply terminal V1, the ground terminal G1, the first signal output terminal E11, and the second signal output terminal E12.

[0034] Here, the MR elements included in the first bridge circuit 110 among the multiple MR elements 50 are denoted by the reference symbol 50A, and the MR elements included in the second bridge circuit 120 among the multiple MR elements 50 are denoted by the reference symbol 50B. Note that any MR element is denoted by the reference symbol 50. The first bridge circuit 110 further includes a first wiring 111 that electrically connects the multiple MR elements 50A. The second bridge circuit 120 further includes a second wiring 121 that electrically connects the multiple MR elements 50B. The connection electrodes 31 to 34 electrically connect the power supply terminal V1, the ground terminal G1, the first signal output terminal E11, the second signal output terminal E12, the first wiring 111, and the second wiring 121. Thus, the first and second bridge circuits 110 and 120 are electrically connected to the power supply terminal V1, the ground terminal G1, the first signal output terminal E11, and the second signal output terminal E12.

[0035] Connection point P11 is physically a portion of first wiring 111 that is connected to connection electrode 31. Connection point P12 is physically a portion of first wiring 111 that is connected to connection electrode 32. Connection point P13 is physically a portion of first wiring 111 that is connected to connection electrode 33. Connection point P14 is physically a portion of first wiring 111 that is connected to connection electrode 34.

[0036] Connection point P21 is physically a portion of second wiring 121 that is connected to connection electrode 31. Connection point P22 is physically a portion of second wiring 121 that is connected to connection electrode 32. Connection point P23 is physically a portion of second wiring 121 that is connected to connection electrode 33. Connection point P24 is physically a portion of second wiring 121 that is connected to connection electrode 34.

[0037] Next, the configurations of the first and second bridge circuits 110, 120 will be described in detail with reference to Fig. 4 to Fig. 6. Fig. 4 is a perspective view showing a portion of the magnetic sensor 1. Fig. 5 is a side view showing a portion of the magnetic sensor 1. Fig. 6 is a plan view showing a portion of the magnetic sensor 1.

[0038] The magnetic sensor 1 further includes a plurality of yokes each made of a soft magnetic material. The plurality of yokes includes a plurality of first yokes 40 arranged at the same position in a direction parallel to the Z direction. In this embodiment, the plurality of first yokes 40 are configured to induce a magnetic field around the plurality of first yokes 40 and increase the intensity of the X-direction magnetic field component of the magnetic field to be detected that is applied to the plurality of MR elements 50. Each of the plurality of first yokes 40 has a rectangular parallelepiped shape that is elongated in a direction parallel to the Y direction. Each of the plurality of first yokes 40 has a bottom surface 40a and a top surface 40b that are located opposite each other in a direction parallel to the Z direction, and a first end surface 40c and a second end surface 40d that are located opposite each other in a direction parallel to the X direction.

[0039] Note that the case where the multiple first yokes 40 are arranged at the same position in a direction parallel to the Z direction is not limited to the case where both the lower surfaces 40a of the multiple first yokes 40 and the upper surfaces 40b of the multiple first yokes 40 are arranged at the same position in a direction parallel to the Z direction. For example, even if the lower surfaces 40a (or upper surfaces 40b) of the multiple first yokes 40 are arranged at different positions in the Z direction, if a virtual plane perpendicular to the Z direction intersects all of the multiple first yokes 40, it can be said that the multiple first yokes 40 are arranged at the same position in a direction parallel to the Z direction. In this case, the cross-sectional shapes of the multiple first yokes 40 in a cross section parallel to the XZ plane may be the same or different from each other. The above description of the multiple first yokes 40 also applies to the other multiple yokes in other embodiments.

[0040] The multiple MR elements 50 are configured to detect magnetic fields induced by the multiple yokes and are arranged near the multiple first yokes 40. In this embodiment, particularly, each of the multiple MR elements 50 is configured to detect an X-direction magnetic field component of a magnetic field to be detected, including magnetic fields induced by the multiple yokes. The first bridge circuit 110 and the second bridge circuit 120 are arranged to sandwich the multiple first yokes 40. In this embodiment, the first bridge circuit 110 is arranged below the multiple first yokes 40. The second bridge circuit 120 is arranged above the multiple first yokes 40. Each of the multiple MR elements 50A is arranged near the bottom surface 40a of each of the multiple first yokes 40. Each of the multiple MR elements 50B is arranged near the top surface 40b of each of the multiple first yokes 40.

[0041] The multiple MR elements 50 include multiple element pairs. Each of the multiple element pairs includes a first MR element arranged near the first end face 40c of one first yoke 40 and a second MR element arranged near the second end face 40d of the same first yoke 40. The first MR element corresponds to the "first element" in the present invention. The second MR element corresponds to the "second element" in the present invention. The first MR element and the second MR element included in one element pair are arranged to sandwich one first yoke when viewed from a direction parallel to the Z direction. Furthermore, both the first MR element and the second MR element included in one element pair are included in either the first bridge circuit 110 or the second bridge circuit 120.

[0042] Here, attention is focused on two adjacent first yokes 40 that are spaced apart in a direction parallel to the X direction among the multiple first yokes 40. When viewed from the Z direction, one MR element 50A and one MR element 50B are arranged between the two first yokes 40. One MR element 50A is arranged near the second end face 40d of the first yoke 40 located on the −X direction side of the MR element 50A, and is also arranged near the first end face 40c of the first yoke 40 located on the X direction side of the MR element 50A. Therefore, this one MR element 50A corresponds to the second MR element when the first yoke 40 located on the −X direction side of the MR element 50A is used as a reference, and corresponds to the first MR element when the first yoke 40 located on the X direction side of the MR element 50A is used as a reference.

[0043] Similarly, one MR element 50B is disposed near the second end face 40d of the first yoke 40 located on the −X direction side of the MR element 50B, and is also disposed near the first end face 40c of the first yoke 40 located on the X direction side of the MR element 50B. Therefore, this one MR element 50B corresponds to the second MR element when the first yoke 40 located on the −X direction side of the MR element 50B is used as a reference, and corresponds to the first MR element when the first yoke 40 located on the X direction side of the MR element 50B is used as a reference.

[0044] Here, among the multiple element pairs, an element pair consisting of a first and a second MR element arranged near the lower surface 40a of the first yoke 40 is referred to as a first element pair, and an element pair consisting of a first and a second MR element arranged near the upper surface 40b of the first yoke 40 is referred to as a second element pair. The first bridge circuit 110 includes multiple first element pairs. The second bridge circuit 120 includes multiple second element pairs. The first MR element of the first element pair arranged near one first yoke 40 and the first MR element of the second element pair may be arranged to overlap each other when viewed from the Z direction. Similarly, the second MR element of the first element pair arranged near one first yoke 40 and the second MR element of the second element pair may be arranged to overlap each other when viewed from the Z direction.

[0045] The first wiring 111 of the first bridge circuit 110 includes a plurality of leads 12 made of a conductive material. Each of the leads 12 electrically connects the first MR element and the second MR element of each of the first element pairs. Each of the leads 12 includes a portion that overlaps with the first yoke 40 when viewed from the Z direction. That is, each of the leads 12 extends to pass under the first yoke 40 and connects the first MR element and the second MR element. In this embodiment, particularly, each of the leads 12 connects two MR elements 50A arranged in a direction parallel to the X direction. The dimension of the lead 12 in a direction parallel to the Y direction may be larger than the dimension of the MR element 50A in a direction parallel to the Y direction.

[0046] Here, among the multiple leads 12, the leads connected to the bottom surfaces of two MR elements 50A are referred to as lower leads, and the leads connected to the top surfaces of the two MR elements 50A are referred to as upper leads. MR elements 50A are arranged on the top surfaces of the lower leads near both ends in a direction parallel to the X direction. Each of the multiple upper leads is arranged on two adjacent lower leads spaced apart in a direction parallel to the X direction, electrically connecting the two adjacent MR elements 50A. In this way, the multiple leads connect the multiple MR elements 50A lined up in a direction parallel to the X direction.

[0047] The plurality of first element pairs may be arranged in both the X and Y directions. The first wiring 111 may further include a plurality of connection leads (not shown). Here, a group consisting of a plurality of MR elements 50A arranged in a direction parallel to the X direction is referred to as an element array. Each of the first to fourth resistor units R11 to R14 of the first bridge circuit 110 includes a plurality of element arrays arranged in a direction parallel to the Y direction. As shown in FIG. 6, in each of the first to fourth resistor units R11 to R14, the plurality of connection leads connect two adjacent element arrays spaced apart in a direction parallel to the Y direction so that the shape of the first wiring 111 is meandering when viewed from the Z direction.

[0048] For convenience, FIG. 6 illustrates the first yoke 40 such that its dimension in the direction parallel to the Y direction is smaller than the dimension of the first wiring 111, i.e., each of the multiple leads 12, in the direction parallel to the Y direction. However, the above-described dimension of the first yoke 40 may be equal to or greater than the above-described dimension of each of the multiple leads 12. Also, FIG. 6 illustrates the first yoke 40 as extending only between one first MR element and one second MR element included in one first element pair. However, the first yoke 40 may extend so as to pass between multiple first MR elements and multiple second MR elements included in multiple first element pairs aligned in a direction parallel to the Y direction.

[0049] The second wiring 121 of the second bridge circuit 120 includes a plurality of leads 22 made of a conductive material. Each of the leads 22 electrically connects the first MR element and the second MR element of each of the second element pairs. Each of the leads 22 includes a portion that overlaps with the first yoke 40 when viewed from the Z direction. That is, each of the leads 22 extends to pass above the first yoke 40 and connects the first MR element and the second MR element. In this embodiment, particularly, each of the leads 22 connects two MR elements 50B arranged in a direction parallel to the X direction. The dimension of the lead 22 in a direction parallel to the Y direction may be larger than the dimension of the MR element 50B in a direction parallel to the Y direction.

[0050] Here, among the multiple leads 22, the leads connected to the bottom surfaces of the two MR elements 50B are referred to as lower leads, and the leads connected to the top surfaces of the two MR elements 50B are referred to as upper leads. The connection relationship between the multiple MR elements 50B and the multiple lower leads and multiple upper leads is the same as the connection relationship between the multiple MR elements 50A and the multiple lower leads and multiple upper leads.

[0051] The second element pairs may be arranged in plural numbers in each of the X and Y directions. The second wiring 121 may further include a plurality of connection leads (not shown). Each of the first to fourth resistor units R21 to R24 of the second bridge circuit 120 includes a plurality of element rows aligned in a direction parallel to the Y direction. Although not shown, in the same way as the first wiring 111, each of the plurality of connection leads connects two adjacent element rows spaced apart in a direction parallel to the Y direction in each of the first to fourth resistor units R21 to R24 so that the shape of the second wiring 121 is meandering when viewed from the Z direction.

[0052] Next, the configuration of an MR element 50 will be described with reference to FIG. 7. FIG. 7 is a perspective view showing the MR element 50. The MR element 50 is a spin-valve type MR element. The MR element 50 includes a magnetization pinned layer 52 having a fixed magnetization direction, a free layer 54 having a magnetization direction that can change depending on the direction of an applied magnetic field, and a gap layer 53 disposed between the magnetization pinned layer 52 and the free layer 54. The MR element 50 may be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a nonmagnetic conductive layer. In the MR element 50, the resistance value changes depending on the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization pinned layer 52. When this angle is 0°, the resistance value is minimum, and when the angle is 180°, the resistance value is maximum.

[0053] The MR element 50 has a shape elongated in a direction parallel to the Y direction. As a result, the free layer 54 of the MR element 50 has shape anisotropy such that the easy axis of magnetization is parallel to the Y direction. Therefore, in the absence of an applied magnetic field, the magnetization direction of the free layer 54 is parallel to the Y direction. When a magnetic field component parallel to the X direction is present, the magnetization direction of the free layer 54 changes depending on the direction and strength of the magnetic field component. Therefore, the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization fixed layer 52 changes depending on the direction and strength of the magnetic field component received by the MR element 50. Therefore, the resistance value of the MR element 50 corresponds to the magnetic field component. The easy axis of magnetization can be set parallel to the Y direction by providing a magnet that applies a bias magnetic field to the free layer 54, regardless of shape anisotropy, i.e., a bias magnetic field due to shape anisotropy.

[0054] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization pinned layer 52, the gap layer 53, and the free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization pinned layer 52 to pin the magnetization direction of the magnetization pinned layer 52. The magnetization pinned layer 52 may be a so-called self-pinned type pinned layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type pinned layer has a synthetic ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization pinned layer 52 is a self-pinned type pinned layer, the antiferromagnetic layer 51 may be omitted.

[0055] The layers 51 to 54 in each of the MR elements 50 may be arranged upside down relative to the arrangement shown in FIG.

[0056] Next, the magnetization direction of the magnetization fixed layer 52 will be described with reference to FIG. 3. The magnetization of the magnetization fixed layer 52 of each of the MR elements 50A in the first and third resistance units R11 and R13 of the first bridge circuit 110 includes a component in a first magnetization direction. The magnetization of the magnetization fixed layer 52 of each of the MR elements 50A in the second and fourth resistance units R12 and R14 of the first bridge circuit 110 includes a component in a second magnetization direction opposite to the first magnetization direction. The magnetization of the magnetization fixed layer 52 of each of the MR elements 50B in the first and third resistance units R21 and R23 of the second bridge circuit 120 includes a component in the first magnetization direction. The magnetization of the magnetization fixed layer 52 of each of the MR elements 50B in the second and fourth resistance units R22 and R24 of the second bridge circuit 120 includes a component in the second magnetization direction. In this embodiment, the first magnetization direction is the X direction, and the second magnetization direction is the −X direction. In Fig. 3, the arrows drawn to overlap the resistors R11, R13, R21, and R23 respectively represent the first magnetization direction, and the arrows drawn to overlap the resistors R12, R14, R22, and R24 respectively represent the second magnetization direction.

[0057] When the magnetization of the magnetization fixed layer 52 includes a component in a specific magnetization direction, the component in the specific magnetization direction may be the main component of the magnetization of the magnetization fixed layer 52. Alternatively, the magnetization of the magnetization fixed layer 52 may not include a component in a direction perpendicular to the specific magnetization direction. In this embodiment, when the magnetization of the magnetization fixed layer 52 includes a component in a specific magnetization direction, the direction of the magnetization of the magnetization fixed layer 52 becomes the specific magnetization direction or approximately the specific magnetization direction.

[0058] Next, with reference to FIG. 3, at least one detection signal generated by each of the first bridge circuit 110, the second bridge circuit 120, and the magnetic sensor 1 will be described in detail. First, the first bridge circuit 110 will be described. The first bridge circuit 110 is configured to generate two detection signals corresponding to a magnetic field component parallel to the X direction. That is, when the magnetic field component is oriented in the X direction, the magnetization direction of the free layer 54 of the MR element 50A tilts from a direction parallel to the Y direction toward the X direction. As a result, compared to a state in which no magnetic field component is present, the resistance value of each of the MR elements 50A in the first and third resistor units R11 and R13 decreases, and the resistance value of each of the MR elements 50A in the second and fourth resistor units R12 and R14 increases. As a result, the resistance value of each of the first and third resistor units R11 and R13 decreases, and the resistance value of each of the second and fourth resistor units R12 and R14 increases.

[0059] When the direction of the magnetic field component is the −X direction, the change in the resistance value of each of the first to fourth resistor parts R11 to R14 is opposite to that when the direction of the magnetic field component is the X direction.

[0060] As described above, when the direction and strength of the magnetic field components change, the resistance values ​​of the first through fourth resistor sections R11-R14 change such that the resistance values ​​of the first and third resistor sections R11, R13 increase while the resistance values ​​of the second and fourth resistor sections R12, R14 decrease, or the resistance values ​​of the first and third resistor sections R11, R13 decrease while the resistance values ​​of the second and fourth resistor sections R12, R14 increase. This changes the potential of each of the nodes P13, P14 shown in FIG. 3. The potentials of the nodes P13, P14 correspond to the two detection signals generated by the first bridge circuit 110.

[0061] Next, the second bridge circuit 120 will be described. Like the first bridge circuit 110, the second bridge circuit 120 is configured to generate two detection signals corresponding to magnetic field components parallel to the X direction by itself. The above description of the first bridge circuit 110 can be applied to the second bridge circuit 120 by replacing the first bridge circuit 110, the multiple MR elements 50A, the first to fourth resistor units R11 to R14, and the junctions P13 and P14 with the second bridge circuit 120, the multiple MR elements 50B, the first to fourth resistor units R21 to R24, and the junctions P23 and P24, respectively. The potentials of the junctions P23 and P24 correspond to the two detection signals generated by the second bridge circuit 120.

[0062] Next, at least one detection signal generated by the magnetic sensor 1 will be described. The connection point P13 of the first bridge circuit 110 and the connection point P23 of the second bridge circuit 120 are connected to the first signal output terminal E11. The connection point P14 of the first bridge circuit 110 and the connection point P24 of the second bridge circuit 120 are connected to the second signal output terminal E12. In this embodiment, the potentials of the connection points P13, P23, and the first signal output terminal E11 are equal to each other, and the potentials of the connection points P14, P24, and the second signal output terminal E12 are equal to each other. The potentials of the first and second signal output terminals E11 and E12 change in the same manner as the potentials of the connection points P13 and P14 when the first bridge circuit 110 is used alone or the potentials of the connection points P23 and P24 when the second bridge circuit 120 is used alone. The magnetic sensor 1 generates at least one detection signal corresponding to the potential of each of the first and second signal output terminals E11 and E12 or the potential difference between the first and second signal output terminals E11 and E12. The at least one detection signal corresponds to the X-direction magnetic field component of the magnetic field to be detected.

[0063] Next, a brief description will be given of other configurations of the magnetic sensor 1 according to this embodiment. Although not shown, the components of the magnetic sensor 1 except for the substrate 5 are stacked on the substrate 5 together with an insulating layer (not shown) that is arranged around the components of the magnetic sensor 1 except for the substrate 5. Furthermore, the power supply terminal V1, the ground terminal G1, and the first and second signal output terminals E11 and E12 are formed so as to be exposed from the insulating layer (not shown).

[0064] Next, a brief description will be given of a manufacturing method of the magnetic sensor 1 according to this embodiment. The manufacturing method of the magnetic sensor 1 includes a step of forming a first bridge circuit 110, a step of forming a plurality of first yokes 40, and a step of forming a second bridge circuit 120. The step of forming the first bridge circuit 110 and the step of forming the second bridge circuit 120 each include a step of forming a plurality of MR elements 50. The step of forming the first bridge circuit 110 further includes a step of forming a first wiring 111. The step of forming the second bridge circuit 120 further includes a step of forming a second wiring 121. The manufacturing method of the magnetic sensor 1 further includes a step of forming an insulating layer (not shown), a step of forming connection electrodes 31 to 34, and a step of forming a power supply terminal V1, a ground terminal G1, a first signal output terminal E11, and a second signal output terminal E12.

[0065] In the step of forming the plurality of MR elements 50, first, a plurality of initial MR elements are formed, which will later become the plurality of MR elements 50. Each of the plurality of initial MR elements includes at least an initial magnetization fixed layer, which will later become the magnetization fixed layer 52, a free layer 54, and a gap layer 53. Each of the plurality of initial MR elements may further include an antiferromagnetic layer 51.

[0066] Next, the magnetization direction of the initial magnetization pinned layer is pinned to the predetermined direction using laser light and an external magnetic field of a predetermined direction. For example, for the initial MR elements that will later become the MR elements 50 of the resistance units R11, R13, R21, and R23, the initial MR elements are irradiated with laser light while applying an external magnetic field of the first magnetization direction (X direction). If the initial MR elements include an antiferromagnetic layer 51, the laser light is irradiated so that the temperature of the initial MR elements irradiated with the laser light is equal to or higher than the blocking temperature of the antiferromagnetic layer 51. The temperature of the initial MR elements can be adjusted, for example, by the intensity and pulse width of the laser light. After the laser light irradiation, when the temperature of the initial MR elements drops below the blocking temperature, the magnetization direction of the initial magnetization pinned layer is pinned to the first magnetization direction. As a result, the initial magnetization pinned layer becomes the magnetization pinned layer 52, and the initial MR elements become the MR elements 50 of the resistance units R11, R13, R21, and R23.

[0067] Furthermore, in the other initial MR elements that will later become the MR elements 50 of the resistance units R12, R14, R22, and R24, the direction of the external magnetic field is set to the second magnetization direction (-X direction), thereby fixing the magnetization direction of the initial magnetization pinned layer of each of the other initial MR elements to the second magnetization direction. In this way, the MR elements 50 of the resistance units R12, R14, R22, and R24 are formed.

[0068] The step of forming the plurality of MR elements 50 of the first bridge circuit 110 may be performed before the step of forming the plurality of first yokes 40. Furthermore, the step of forming the plurality of MR elements 50 of the second bridge circuit 120 may be performed after the step of forming the plurality of first yokes 40.

[0069] Next, the operation and effect of the magnetic sensor 1 according to this embodiment will be described. In this embodiment, the first bridge circuit 110 and the second bridge circuit 120 are arranged to sandwich the multiple first yokes 40 and are connected in parallel with each other. As a result, according to this embodiment, it is possible to increase the area occupied by the multiple MR elements 50 while providing multiple first yokes 40. In particular, in this embodiment, it is possible to double the area occupied by the multiple MR elements 50 compared to when only one bridge circuit is provided. As a result, according to this embodiment, it is possible to reduce noise contained in the detection signal generated by the magnetic sensor 1.

[0070] Moreover, according to the present embodiment, it is possible to increase the area occupied by the multiple MR elements 50 without increasing the area of ​​the planar shape (shape viewed from the Z direction) of the magnetic sensor 1. As a result, according to the present embodiment, it is possible to suppress an increase in the cost of the magnetic sensor 1.

[0071] Furthermore, when compared with the same number of MR elements 50, according to this embodiment, by connecting the first bridge circuit 110 and the second bridge circuit 120 in parallel, the proportion of the resistance of the multiple MR elements in the resistance of the bridge circuit becomes relatively larger compared to when there is only one bridge circuit, so the resistance value of each of the first and second wirings 111, 121 can be reduced, and as a result, the sensitivity of the magnetic sensor 1 can be increased.

[0072] Furthermore, in this embodiment, the MR element 50A has a shape that is elongated in a direction parallel to the Y direction. Each of the multiple leads 12 of the first wiring 111 connects two MR elements 50A aligned in a direction parallel to the X direction, and includes a portion that overlaps with one of the multiple first yokes 40 when viewed from the Z direction. As a result, according to this embodiment, the dimension of each of the multiple leads 12 in a direction parallel to the Y direction can be made approximately equal to the longitudinal dimension of the MR element 50A. As a result, according to this embodiment, the resistance value of the first wiring 111 can be reduced.

[0073] The above description of the first wiring 111 also applies to the second wiring 121. According to this embodiment, the resistance value of the second wiring 121 can be reduced.

[0074] Furthermore, in this embodiment, the first wiring 111 of the first bridge circuit 110 and the second wiring 121 of the second bridge circuit 120 are connected by the connection electrodes 31 to 34, each extending in a direction parallel to the Z direction. As a result, according to this embodiment, the arrangement of the MR elements 50A and the leads 12 of the first bridge circuit 110 when viewed from the Z direction can be made the same as the arrangement of the MR elements 50B and the leads 22 of the second bridge circuit 120 when viewed from the Z direction. Furthermore, according to this embodiment, the length of the connection electrodes 31 to 34 can be made shorter than the length of the electrodes for connecting the first wiring 111 and the second wiring 121 when the first bridge circuit 110 and the second bridge circuit 120 are positioned at different positions from each other in a direction perpendicular to the Z direction. As a result, according to this embodiment, the resistance value of the connection electrodes 31 to 34 can be reduced.

[0075] [Second embodiment] Next, a second embodiment of the present invention will be described. First, a schematic configuration of a magnetic sensor 2 according to this embodiment will be described with reference to Fig. 8. Fig. 8 is a circuit diagram showing the circuit configuration of the magnetic sensor 2.

[0076] The magnetic sensor 2 includes a plurality of MR elements 50, and a first bridge circuit 210 and a second bridge circuit 220 each configured by a plurality of MR elements 50. The configuration of each of the plurality of MR elements 50 is the same as that of the first embodiment. Each of the first bridge circuit 210 and the second bridge circuit 220 is configured to detect a magnetic field component of the magnetic field to be detected that is parallel to the Y direction, and to generate at least one detection signal corresponding to the intensity of the magnetic field component. The first bridge circuit 210 and the second bridge circuit 220 are connected in parallel to each other.

[0077] The first bridge circuit 210 includes a first resistor unit R31, a second resistor unit R32, a third resistor unit R33, and a fourth resistor unit R34. The second bridge circuit 220 includes a first resistor unit R41, a second resistor unit R42, a third resistor unit R43, and a fourth resistor unit R44. Each of the resistor units R31 to R34 and R41 to R44 is formed by electrically connecting a plurality of MR elements 50 out of the plurality of MR elements 50.

[0078] One end of each of the first and fourth resistor units R31 and R34 is connected to a connection point P31. One end of each of the second and third resistor units R32 and R33 is connected to a connection point P32. The other end of each of the first and second resistor units R31 and R32 is connected to a connection point P33. The other end of each of the third and fourth resistor units R33 and R34 is connected to a connection point P34.

[0079] One end of each of the first and fourth resistor sections R41 and R44 is connected to a connection point P41. One end of each of the second and third resistor sections R42 and R43 is connected to a connection point P42. The other end of each of the first and second resistor sections R41 and R42 is connected to a connection point P43. The other end of each of the third and fourth resistor sections R43 and R44 is connected to a connection point P44.

[0080] The magnetic sensor 2 further includes a power supply terminal V2, a ground terminal G2, a first signal output terminal E21, and a second signal output terminal E22. The connection points P31 and P41 are connected to the power supply terminal V2. The connection points P32 and P42 are connected to the ground terminal G2. The connection points P33 and P43 are connected to the first signal output terminal E21. The connection points P34 and P44 are connected to the second signal output terminal E22.

[0081] The first resistor units R31 and R41 are arranged between the power supply terminal V2 and the first signal output terminal E21 in terms of the circuit configuration. The first resistor units R31 and R41 are connected in parallel in terms of the circuit configuration. The first resistor units R31 and R41 may be arranged to overlap each other when viewed from the Z direction. The first resistor unit R41 may be arranged above the first resistor unit R31.

[0082] The second resistor units R32 and R42 are arranged between the ground terminal G2 and the first signal output terminal E21 in terms of the circuit configuration. The second resistor units R32 and R42 are connected in parallel in terms of the circuit configuration. The second resistor units R32 and R42 may be arranged to overlap each other when viewed from the Z direction. The second resistor unit R42 may be arranged above the second resistor unit R32.

[0083] The third resistor units R33 and R43 are arranged between the ground terminal G2 and the second signal output terminal E22 in terms of the circuit configuration. The third resistor units R33 and R43 are connected in parallel in terms of the circuit configuration. The third resistor units R33 and R43 may be arranged to overlap each other when viewed from the Z direction. The third resistor unit R43 may be arranged above the third resistor unit R33.

[0084] The fourth resistor units R34 and R44 are arranged between the power supply terminal V2 and the second signal output terminal E22 in terms of the circuit configuration. The fourth resistor units R34 and R44 are connected in parallel in terms of the circuit configuration. The fourth resistor units R34 and R44 are arranged to overlap each other when viewed from the Z direction. The fourth resistor unit R44 may be arranged above the fourth resistor unit R34.

[0085] Here, the MR elements included in the first bridge circuit 210 among the multiple MR elements 50 are denoted by the reference symbol 50A, and the MR elements included in the second bridge circuit 220 among the multiple MR elements 50 are denoted by the reference symbol 50B. Any MR element is denoted by the reference symbol 50. The first bridge circuit 210 further includes a first wiring 211 that electrically connects the multiple MR elements 50A. The second bridge circuit 220 further includes a second wiring 221 that electrically connects the multiple MR elements 50B. The magnetic sensor 2 further includes a power supply terminal V2, a ground terminal G2, a first signal output terminal E21, a second signal output terminal E22, and first to fourth connection electrodes (not shown) that electrically connect the first wiring 211 and the second wiring 221. The connection relationships between the terminals V2, G2, E21, E22 and the wirings 211, 221 and the first to fourth connection electrodes are similar to the connection relationships between the terminals V1, G1, E11, E12 and the wirings 111, 121 and the connection electrodes 31 to 34 in the first embodiment. In addition, the shapes of the first to fourth connection electrodes are similar to the shapes of the connection electrodes 31 to 34 in the first embodiment.

[0086] Next, the configurations of the first and second bridge circuits 210, 220 will be described in detail with reference to Fig. 9 to Fig. 11. Fig. 9 is a perspective view showing a portion of the magnetic sensor 2. Fig. 10 is a side view showing a portion of the magnetic sensor 2. Fig. 11 is a plan view showing a portion of the magnetic sensor 2.

[0087] The magnetic sensor 2 further includes a plurality of first yokes 40. In the present embodiment, the attitudes of the plurality of first yokes 40 and the plurality of MR elements 50 are different from those in the first embodiment. When viewed from the Z direction, the attitudes of the plurality of first yokes 40 and the plurality of MR elements 50 are rotated 90° clockwise from the attitudes shown in the first embodiment.

[0088] In this embodiment, the multiple first yokes 40 are configured to induce a magnetic field around the multiple first yokes 40 and increase the intensity of the Y-direction magnetic field component of the magnetic field to be detected that is applied to the multiple MR elements 50. Each of the multiple first yokes 40 has a rectangular parallelepiped shape that is elongated in a direction parallel to the X direction. In each of the multiple first yokes 40, the first end face 40c and the second end face 40d are located on opposite sides of each other in a direction parallel to the Y direction.

[0089] The first bridge circuit 210 and the second bridge circuit 220 are arranged to sandwich the multiple first yokes 40. In the present embodiment, the first bridge circuit 210 is arranged below the multiple first yokes 40. The second bridge circuit 220 is arranged above the multiple first yokes 40. The relative positional relationship between the multiple first yokes 40 and the multiple MR elements 50 is the same as in the first embodiment.

[0090] The first wiring 211 of the first bridge circuit 210 includes a plurality of leads 12. The second wiring 221 of the second bridge circuit 220 includes a plurality of leads 22. The connection relationship between the plurality of leads 12 and the plurality of MR elements 50A and the connection relationship between the plurality of leads 22 and the plurality of MR elements 50B are the same as those in the first embodiment. As shown in FIG. 11 , the overall shape of the first wiring 211 may be a meander shape. Similarly, the overall shape of the second wiring 221 may be a meander shape. Note that in this embodiment, the orientation of the plurality of leads 12, 22, when viewed from the Z direction, is rotated 90° clockwise from the orientation shown in the first embodiment.

[0091] Next, the magnetization direction of the magnetization fixed layer 52 of the MR element 50 will be described with reference to FIG. 8. The magnetization of the magnetization fixed layer 52 of each of the multiple MR elements 50A in the first and third resistance units R31, R33 of the first bridge circuit 210 includes a component in a first magnetization direction. The magnetization of the magnetization fixed layer 52 of each of the multiple MR elements 50A in the second and fourth resistance units R32, R34 of the first bridge circuit 210 includes a component in a second magnetization direction opposite to the first magnetization direction. The magnetization of the magnetization fixed layer 52 of each of the multiple MR elements 50B in the first and third resistance units R41, R43 of the second bridge circuit 220 includes a component in the first magnetization direction. The magnetization of each of the magnetization fixed layers 52 of the multiple MR elements 50B in the second and fourth resistor units R42 and R44 of the second bridge circuit 220 includes a component in the second magnetization direction. In particular, in this embodiment, the first magnetization direction is the Y direction, and the second magnetization direction is the −Y direction. In FIG. 8, the multiple arrows drawn to overlap the resistor units R31, R33, R41, and R43 respectively represent the first magnetization direction, and the multiple arrows drawn to overlap the resistor units R32, R34, R42, and R44 respectively represent the second magnetization direction.

[0092] Next, with reference to FIG. 8, at least one detection signal generated by each of the first bridge circuit 210, the second bridge circuit 220, and the magnetic sensor 2 will be briefly described. The first bridge circuit 210 is configured to generate two detection signals corresponding to magnetic field components parallel to the Y direction. As with the first bridge circuit 110 in the first embodiment, when the direction and strength of the magnetic field component in the Y direction change, the potentials of the connection points P33 and P34 shown in FIG. 8 change. The potentials of the connection points P33 and P34 correspond to the two detection signals generated by the first bridge circuit 210.

[0093] Like the first bridge circuit 210, the second bridge circuit 220 is configured to generate two detection signals corresponding to magnetic field components parallel to the Y direction. As with the second bridge circuit 120 in the first embodiment, when the direction and strength of the magnetic field component in the Y direction change, the potentials of the connection points P43 and P44 shown in FIG. 8 change. The potentials of the connection points P43 and P44 correspond to the two detection signals generated by the second bridge circuit 220.

[0094] The potentials of the first and second signal output terminals E21 and E22 of the magnetic sensor 2 change in the same manner as the potentials of the connection points P33 and P34 when the first bridge circuit 210 is used alone or the potentials of the connection points P43 and P44 when the second bridge circuit 220 is used alone. The magnetic sensor 2 generates at least one detection signal corresponding to the potentials of the first and second signal output terminals E21 and E22 or the potential difference between the first and second signal output terminals E21 and E22. The at least one detection signal corresponds to the Y-direction magnetic field component of the magnetic field to be detected.

[0095] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0096] [Third embodiment] Next, a third embodiment of the present invention will be described. First, a schematic configuration of a magnetic sensor 3 according to this embodiment will be described with reference to Fig. 12. Fig. 12 is a circuit diagram showing the circuit configuration of the magnetic sensor 3.

[0097] The magnetic sensor 3 includes a plurality of MR elements 50, and a first bridge circuit 310 and a second bridge circuit 320 each configured with a plurality of MR elements 50. The configuration of each of the plurality of MR elements 50 is the same as that of the first embodiment. Each of the first bridge circuit 310 and the second bridge circuit 320 is configured to detect a magnetic field component of the magnetic field to be detected in a direction parallel to the Z direction and generate at least one detection signal corresponding to the intensity of the magnetic field component. The first bridge circuit 310 and the second bridge circuit 320 are connected in parallel to each other.

[0098] The first bridge circuit 310 includes a first resistor unit R51, a second resistor unit R52, a third resistor unit R53, and a fourth resistor unit R54. The second bridge circuit 320 includes a first resistor unit R61, a second resistor unit R62, a third resistor unit R63, and a fourth resistor unit R64. Each of the resistor units R51 to R54 and R61 to R64 is formed by electrically connecting a plurality of MR elements 50 out of the plurality of MR elements 50.

[0099] One end of each of the first and fourth resistor sections R51 and R54 is connected to a connection point P51. One end of each of the second and third resistor sections R52 and R53 is connected to a connection point P52. The other end of each of the first and second resistor sections R51 and R52 is connected to a connection point P53. The other end of each of the third and fourth resistor sections R53 and R54 is connected to a connection point P54.

[0100] One end of each of the first and fourth resistor units R61, R64 is connected to a connection point P61. One end of each of the second and third resistor units R62, R63 is connected to a connection point P62. The other end of each of the first and second resistor units R61, R62 is connected to a connection point P63. The other end of each of the third and fourth resistor units R63, R64 is connected to a connection point P64.

[0101] The magnetic sensor 3 further includes a power supply terminal V3, a ground terminal G3, a first signal output terminal E31, and a second signal output terminal E32. The connection points P51 and P61 are connected to the power supply terminal V3. The connection points P52 and P62 are connected to the ground terminal G3. The connection points P53 and P63 are connected to the first signal output terminal E31. The connection points P54 and P64 are connected to the second signal output terminal E32.

[0102] The first resistor units R51 and R61 are arranged between the power supply terminal V3 and the first signal output terminal E31 in terms of the circuit configuration. The first resistor units R51 and R61 are connected in parallel in terms of the circuit configuration. The first resistor units R51 and R61 may be arranged to overlap each other when viewed from the Z direction. The first resistor unit R61 may be arranged above the first resistor unit R51.

[0103] The second resistor units R52 and R62 are arranged between the ground terminal G3 and the first signal output terminal E31 in terms of the circuit configuration. The second resistor units R52 and R62 are connected in parallel in terms of the circuit configuration. The second resistor units R52 and R62 may be arranged to overlap each other when viewed from the Z direction. The second resistor unit R62 may be arranged above the second resistor unit R52.

[0104] The third resistor units R53 and R63 are arranged between the ground terminal G3 and the second signal output terminal E32 in terms of the circuit configuration. The third resistor units R53 and R63 are connected in parallel in terms of the circuit configuration. The third resistor units R53 and R63 may be arranged to overlap each other when viewed from the Z direction. The third resistor unit R63 may be arranged above the third resistor unit R53.

[0105] The fourth resistor units R54 and R64 are arranged between the power supply terminal V3 and the second signal output terminal E32 in the circuit configuration. The fourth resistor units R54 and R64 are connected in parallel in the circuit configuration. The fourth resistor units R54 and R64 are arranged to overlap each other when viewed from the Z direction. The fourth resistor unit R64 may be arranged above the fourth resistor unit R54.

[0106] Here, the MR elements included in the first bridge circuit 310 among the multiple MR elements 50 are denoted by the reference symbol 50A, and the MR elements included in the second bridge circuit 320 among the multiple MR elements 50 are denoted by the reference symbol 50B. Any MR element is denoted by the reference symbol 50. The first bridge circuit 310 further includes a first wiring 311 that electrically connects the multiple MR elements 50A. The second bridge circuit 320 further includes a second wiring 321 that electrically connects the multiple MR elements 50B. The magnetic sensor 3 further includes a power supply terminal V3, a ground terminal G3, a first signal output terminal E31, a second signal output terminal E32, and first to fourth connection electrodes (not shown) that electrically connect the first wiring 311 and the second wiring 321. The connection relationships between the terminals V3, G3, E31, E32 and the wirings 311, 321 and the first to fourth connection electrodes are similar to the connection relationships between the terminals V1, G1, E11, E12 and the wirings 111, 121 and the connection electrodes 31 to 34 in the first embodiment. The shapes of the first to fourth connection electrodes are similar to the shapes of the connection electrodes 31 to 34 in the first embodiment.

[0107] Next, the configurations of the first and second bridge circuits 310, 320 will be described in detail with reference to Fig. 13 to Fig. 15. Fig. 13 is a perspective view showing a part of the magnetic sensor 3. Fig. 14 is a side view showing a part of the magnetic sensor 3. Fig. 15 is a plan view showing a part of the magnetic sensor 3.

[0108] The magnetic sensor 3 further includes a plurality of first yokes 40. In this embodiment, the plurality of first yokes 40 are configured to induce an input magnetic field including an input magnetic field component parallel to the Z direction to generate an output magnetic field. The output magnetic field is a part of the magnetic field induced by the plurality of first yokes 40, and also includes an output magnetic field component parallel to the X direction that changes depending on the input magnetic field component.

[0109] In this application, the "input magnetic field component" refers to the magnetic field component at a position away from the first yoke 40. If the first yoke 40 were not present, the "input magnetic field component" would be substantially the same as the magnetic field component near the position where the first yoke 40 would be placed. In this application, the "output magnetic field component" refers to the magnetic field component near the first yoke 40 and at the location where the MR element 50 is located. The "output magnetic field component" is changed by the first yoke 40 from the magnetic field component (input magnetic field component) that would be present if the first yoke 40 were not present.

[0110] Each of the first yokes 40 has a rectangular parallelepiped shape that is long in a direction parallel to the Y direction. In each of the first yokes 40, the first end face 40c and the second end face 40d are located on opposite sides of each other in a direction parallel to the X direction.

[0111] The first bridge circuit 310 and the second bridge circuit 320 are arranged to sandwich a plurality of first yokes 40. In the present embodiment, the first bridge circuit 310 is arranged below the plurality of first yokes 40. The second bridge circuit 320 is arranged above the plurality of first yokes 40. The positional relationship between the plurality of first yokes 40 and the plurality of MR elements 50 differs from that of the first embodiment in the following respects. When viewed from the Z direction, two MR elements 50A and two MR elements 50B are arranged between two adjacent first yokes 40 spaced apart in a direction parallel to the X direction. As described in the first embodiment, each of the plurality of element pairs includes a first MR element arranged near the first end face 40c of one first yoke 40 and a second MR element arranged near the second end face 40d of the same one first yoke 40. Of the two MR elements 50A, the MR element 50A arranged near the first yoke 40 located on the -X direction side of the other two MR elements 50A corresponds to the second MR element. Of the two MR elements 50A, the MR element 50A arranged near the first yoke 40 located on the X direction side of the other two MR elements 50A corresponds to the first MR element.

[0112] Similarly, of the two MR elements 50B, the MR element 50B arranged near the first yoke 40 located on the -X direction side of the other two MR elements 50B corresponds to the second MR element. Of the two MR elements 50B, the MR element 50B arranged near the first yoke 40 located on the X direction side of the other two MR elements 50B corresponds to the first MR element.

[0113] Except for the above points, the positional relationship between the plurality of first yokes 40 and the plurality of MR elements 50 is the same as in the first embodiment.

[0114] The first wiring 311 of the first bridge circuit 310 includes a plurality of leads 12. In this embodiment, each of the plurality of leads 12 connects the first MR element and the second MR element of one element pair (one first element pair), or connects one first MR element and the other second MR element of two element pairs (two first element pairs). The first MR element and the second MR element of one element pair may be connected by a lower lead or by an upper lead. The connection relationship between the plurality of leads 12 and the plurality of MR elements 50A is the same as that of the first embodiment, except for the points described above.

[0115] The second wiring 321 of the second bridge circuit 320 includes a plurality of leads 22. In this embodiment, each of the plurality of leads 22 connects the first MR element and the second MR element of one element pair (one second element pair), or connects the first MR element of one element pair and the second MR element of the other element pair (two second element pairs). The first MR element and the second MR element of one element pair may be connected by a lower lead or by an upper lead. The connection relationship between the plurality of leads 22 and the plurality of MR elements 50B is the same as that of the first embodiment, except for the points described above.

[0116] 15, the overall shape of the first wiring 311 may be a meander shape. Similarly, the overall shape of the second wiring 321 may be a meander shape.

[0117] Next, we will explain the magnetization direction of the magnetization fixed layer 52 of the MR element 50. First, with reference to Fig. 16, we will explain the magnetization direction of the magnetization fixed layer 52 of the first and third resistance units R51, R53 of the first bridge circuit 310 and the first and third resistance units R61, R63 of the second bridge circuit 320.

[0118] In the first and third resistor units R51 and R53 of the first bridge circuit 310, the magnetization of the magnetization fixed layer 52 of the MR element 50A (first MR element) arranged near the first end face 40c of each of the first yokes 40 among the multiple MR elements 50A includes a component in a first magnetization direction. Also, the magnetization of the magnetization fixed layer 52 of the MR element 50A (second MR element) arranged near the second end face 40d of each of the first yokes 40 among the multiple MR elements 50A includes a component in a second magnetization direction opposite to the first magnetization direction.

[0119] In the first and third resistor units R61 and R63 of the second bridge circuit 320, the magnetization of the magnetization fixed layer 52 of the MR element 50B (first MR element) arranged near the first end face 40c of each of the first yokes 40 among the multiple MR elements 50B includes a component in the second magnetization direction. Also, the magnetization of the magnetization fixed layer 52 of the MR element 50B (second MR element) arranged near the second end face 40d of each of the first yokes 40 among the multiple MR elements 50B includes a component in the first magnetization direction.

[0120] In this embodiment, the first magnetization direction is the X direction, and the second magnetization direction is the −X direction.

[0121] In Fig. 16, multiple arrows represent a first magnetization direction and a second magnetization direction. For example, an arrow drawn near the MR element 50A arranged near the first end face 40c represents that the magnetization of the magnetization fixed layer 52 of this MR element 50A includes a component in the first magnetization direction. Furthermore, an arrow drawn near the MR element 50A arranged near the second end face 40d represents that the magnetization of the magnetization fixed layer 52 of this MR element 50A includes a component in the second magnetization direction. Note that in figures similar to Fig. 16 used in the following description, the first magnetization direction and the second magnetization direction will be represented in the same manner as in Fig. 16.

[0122] Next, with reference to FIG. 17, the magnetization directions of the magnetization fixed layers 52 of the second and fourth resistor sections R52, R54 of the first bridge circuit 310 and the second and fourth resistor sections R62, R64 of the second bridge circuit 320 will be described.

[0123] In the second and fourth resistor units R52 and R54 of the first bridge circuit 310, the magnetization of the magnetization fixed layer 52 of the MR element 50A (first MR element) arranged near the first end face 40c of each of the first yokes 40 among the multiple MR elements 50A includes a component in the second magnetization direction (-X direction). Also, the magnetization of the magnetization fixed layer 52 of the MR element 50A (second MR element) arranged near the second end face 40d of each of the first yokes 40 among the multiple MR elements 50A includes a component in the first magnetization direction (X direction).

[0124] In the second and fourth resistor units R62, R64 of the second bridge circuit 320, the magnetization of the magnetization fixed layer 52 of the MR element 50B (first MR element) arranged near the first end face 40c of each of the first yokes 40 among the multiple MR elements 50B includes a component in the first magnetization direction (X direction). Also, the magnetization of the magnetization fixed layer 52 of the MR element 50B (second MR element) arranged near the second end face 40d of each of the first yokes 40 among the multiple MR elements 50B includes a component in the second magnetization direction (-X direction).

[0125] Here, attention is focused on one first yoke 40 (a specific yoke). As shown in Figures 16 and 17, the magnetization of one magnetization fixed layer 52 of two first MR elements (MR element 50A and MR element 50B) arranged near the first end face 40c and the magnetization of the other magnetization fixed layer 52 contain components in opposite directions. Note that the two first MR elements may be arranged to overlap each other when viewed from the Z direction.

[0126] Similarly, the magnetization of one magnetization pinned layer 52 of two second MR elements (MR element 50A and MR element 50B) arranged near the second end face 40d includes components in opposite directions to the magnetization of the other magnetization pinned layer 52. Note that the two second MR elements may be arranged to overlap each other when viewed from the Z direction.

[0127] Next, with reference to FIGS. 12, 16, and 17, at least one detection signal generated by each of the first bridge circuit 310, the second bridge circuit 320, and the magnetic sensor 3 will be described in detail. First, the first bridge circuit 310 will be described. The first bridge circuit 310 is configured to generate two detection signals corresponding to magnetic field components parallel to the Z direction by itself. That is, in a state where there is no input magnetic field component and, as a result, no output magnetic field component, the magnetization direction of the free layer 54 of each of the multiple MR elements 50A is parallel to the Y direction.

[0128] When an input magnetic field component in the Z direction is present, the direction of the output magnetic field component received by the MR element 50A (first MR element) arranged near the first end face 40c of each of the multiple first yokes 40 is the X direction, and the direction of the output magnetic field component received by the MR element 50A (second MR element) arranged near the second end face 40d of each of the multiple first yokes 40 is the −X direction. In this case, the magnetization direction of the free layer 54 of the first MR element tilts from a direction parallel to the Y direction toward the X direction, and the magnetization direction of the free layer 54 of the second MR element tilts from a direction parallel to the Y direction toward the −X direction. As a result, compared to a state in which an output magnetic field component is not present, the resistance value of each of the multiple MR elements 50A constituting the first and third resistor units R51, R53 decreases, and the resistance values ​​of each of the first and third resistor units R51, R53 also decrease. Furthermore, compared to a state in which no output magnetic field component exists, the resistance values ​​of the multiple MR elements 50A constituting the second and fourth resistor sections R52, R54 increase, and the resistance values ​​of the second and fourth resistor sections R52, R54 also increase.

[0129] When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component and the change in the resistance value of each of the first to fourth resistor parts R51 to R54 are opposite to when the direction of the input magnetic field component is the Z direction.

[0130] The amount of change in the resistance value of the MR element 50A depends on the strength of the output magnetic field component received by the MR element 50A. As the strength of the output magnetic field component increases, the resistance value of the MR element 50A changes in a direction in which the increase or decrease in the resistance value increases. As the strength of the output magnetic field component decreases, the resistance value of the MR element 50A changes in a direction in which the increase or decrease in the resistance value decreases. The strength of the output magnetic field component depends on the strength of the input magnetic field component.

[0131] In this way, when the strength of the input magnetic field component changes, the resistance values ​​of the first to fourth resistor sections R51-R54 change such that the resistance values ​​of the first and third resistor sections R51, R53 increase while the resistance values ​​of the second and fourth resistor sections R52, R54 decrease, or the resistance values ​​of the first and third resistor sections R51, R53 decrease while the resistance values ​​of the second and fourth resistor sections R52, R54 increase. This changes the potential of each of the nodes P53, P54 shown in FIG. 12. The potentials of each of the nodes P53, P54 correspond to the two detection signals generated by the first bridge circuit 310.

[0132] Next, the second bridge circuit 320 will be described. Like the first bridge circuit 310, the second bridge circuit 320 is configured to generate two detection signals corresponding to magnetic field components parallel to the Z direction by itself. The above description of the first bridge circuit 310 basically applies to the second bridge circuit 320. However, in the second bridge circuit 320, when an input magnetic field component in the Z direction is present, the direction of the output magnetic field component received by the MR element 50B (first MR element) arranged near the first end face 40 c of each of the multiple first yokes 40 is the −X direction, and the direction of the output magnetic field component received by the MR element 50B (second MR element) arranged near the second end face 40 d of each of the multiple first yokes 40 is the X direction.

[0133] The manner in which the resistance value of each of the first to fourth resistor units R61 to R64 changes when the direction of the input magnetic field component is the Z direction is the same as the manner in which the resistance value of each of the first to fourth resistor units R51 to R54 changes when the direction of the input magnetic field component is the Z direction. Also, the manner in which the resistance value of each of the first to fourth resistor units R61 to R64 changes when the direction of the input magnetic field component is the −Z direction is the same as the manner in which the resistance value of each of the first to fourth resistor units R51 to R54 changes when the direction of the input magnetic field component is the −Z direction.

[0134] Next, at least one detection signal generated by the magnetic sensor 3 will be described. The connection point P53 of the first bridge circuit 310 and the connection point P63 of the second bridge circuit 320 are connected to the first signal output terminal E31. The connection point P54 of the first bridge circuit 310 and the connection point P64 of the second bridge circuit 320 are connected to the second signal output terminal E32. In this embodiment, the potentials of the connection points P53, P63, and the first signal output terminal E31 are equal to each other, and the potentials of the connection points P54, P64, and the second signal output terminal E32 are equal to each other. The potentials of the first and second signal output terminals E31 and E32 change in the same manner as the potentials of the connection points P53 and P54 when the first bridge circuit 310 is used alone or the potentials of the connection points P63 and P64 when the second bridge circuit 320 is used alone. The magnetic sensor 3 generates at least one detection signal corresponding to the potential of each of the first and second signal output terminals E31, E32 or the potential difference between the first and second signal output terminals E31, E32. The at least one detection signal corresponds to the magnetic field component in the Z direction of the magnetic field to be detected.

[0135] Next, a first and second example of a method for manufacturing the magnetic sensor 3 according to this embodiment will be briefly described. First, the first example will be described. The content of the first example is similar to the content of the method for manufacturing the magnetic sensor 1 according to the first embodiment. Particularly in the first example, in the step of forming the plurality of MR elements 50, after forming the plurality of initial MR elements that will later become the plurality of MR elements 50, the direction of magnetization of the initial magnetization fixed layer is fixed in the above-mentioned predetermined direction using laser light and an external magnetic field in a predetermined direction.

[0136] Next, a second example will be described. In the second example, the process of fixing the magnetization direction of the initial magnetization fixed layer differs from that of the first example. That is, in the process of forming the multiple MR elements 50, after forming the multiple initial MR elements that will later become the multiple MR elements 50, an annealing process is performed to heat the multiple initial MR elements at a predetermined temperature while applying an external magnetic field in one direction parallel to the Z direction so that the magnetization direction of the initial magnetization fixed layer is fixed. For example, the multiple initial MR elements that will later become the multiple MR elements 50 of the resistor units R51, R53, R61, and R63 are annealed while applying an external magnetic field in the Z direction. As a result, the multiple initial MR elements become the multiple MR elements 50 of the resistor units R51, R53, R61, and R63.

[0137] In addition, for the other initial MR elements that later become the MR elements 50 of the resistor sections R52, R54, R62, and R64, the direction of the external magnetic field is set to the -Z direction, so that the other initial MR elements become the MR elements 50 of the resistor sections R52, R54, R62, and R64.

[0138] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0139] [Fourth embodiment] Next, a fourth embodiment of the present invention will be described with reference to Fig. 18 and Fig. 19. Fig. 18 is a perspective view showing a part of the magnetic sensor according to the present embodiment. Fig. 19 is a side view showing a part of the magnetic sensor according to the present embodiment.

[0140] Hereinafter, the multiple first yokes will be referred to as 40A. In this embodiment, the multiple yokes of the magnetic sensor 3 include, in addition to the multiple first yokes 40A, multiple second yokes 40B and multiple third yokes 40C arranged to sandwich the multiple first yokes 40A when viewed from a direction parallel to the Y direction. The multiple second yokes 40B are arranged at the same position in a direction parallel to the Z direction. The multiple third yokes 40C are arranged at the same position in a direction parallel to the Z direction.

[0141] The plurality of second yokes 40B are disposed below the plurality of first yokes 40A. The plurality of third yokes 40C are disposed above the plurality of first yokes 40A. The first bridge circuit 310 is disposed between the plurality of first yokes 40A and the plurality of second yokes 40B. The second bridge circuit 320 is disposed between the plurality of first yokes 40A and the plurality of third yokes 40C.

[0142] Like the first yokes 40A, each of the second yokes 40B and the third yokes 40C is configured to receive an input magnetic field containing an input magnetic field component parallel to the Z direction and generate an output magnetic field. Each of the second yokes 40B and the third yokes 40C has a rectangular parallelepiped shape elongated in a direction parallel to the Y direction. Each of the second yokes 40B and the third yokes 40C has a bottom surface and a top surface opposite each other in a direction parallel to the Z direction, and a first end surface and a second end surface opposite each other in a direction parallel to the X direction. In the following description, the bottom surface, top surface, first end surface, and second end surface of each of the second yokes 40B and the third yokes 40C will be denoted by the reference numerals 40a, 40b, 40c, and 40d, respectively.

[0143] When viewed from the Z direction, each of the multiple second yokes 40B is disposed between two adjacent first yokes 40A spaced apart in a direction parallel to the X direction. Furthermore, one MR element 50A of the first bridge circuit 310 is disposed between the adjacent first yoke 40A and second yoke 40B spaced apart in a direction parallel to the X direction when viewed from the Z direction.

[0144] When viewed from the Z direction, each of the multiple third yokes 40C is disposed between two adjacent first yokes 40A spaced apart in a direction parallel to the X direction. Furthermore, one MR element 50B of the second bridge circuit 320 is disposed between the adjacent first yoke 40A and third yoke 40C spaced apart in a direction parallel to the X direction when viewed from the Z direction.

[0145] Each of the plurality of third yokes 40C may overlap each of the plurality of second yokes 40B when viewed from the Z direction.

[0146] The magnetic sensor 3 further includes at least one shield made of a soft magnetic material and arranged to overlap the first and second bridge circuits 310, 320 when viewed from the Z direction. In this embodiment, the magnetic sensor 3 includes two shields 61, 62 as the at least one shield. The shield 61 is arranged below the plurality of second yokes 40B. The shield 62 is arranged above the plurality of third yokes 40C. The dimension of each of the shields 61, 62 in the Z direction may be smaller than the dimension of each of the shields 61, 62 in the X direction and the dimension of each of the shields 61, 62 in the Y direction.

[0147] Other configurations, actions, and effects of this embodiment are the same as those of the third embodiment.

[0148] [Fifth embodiment] Next, a fifth embodiment of the present invention will be described. First, a schematic configuration of a magnetic sensor 3 according to this embodiment will be described with reference to Fig. 20. Fig. 20 is a circuit diagram showing the circuit configuration of the magnetic sensor 3.

[0149] The magnetic sensor 3 according to this embodiment includes, in addition to the first and second bridge circuits 310 and 320 according to the fourth embodiment, a third bridge circuit 330 and a fourth bridge circuit 340, each of which is configured with a plurality of MR elements 50. Each of the third bridge circuit 330 and the fourth bridge circuit 340 is configured to detect a magnetic field component of the magnetic field to be detected that is parallel to the Z direction, and to generate at least one detection signal corresponding to the intensity of the magnetic field component. The first to fourth bridge circuits 310, 320, 330, and 340 are connected in parallel with each other.

[0150] The third bridge circuit 330 includes a first resistor unit R71, a second resistor unit R72, a third resistor unit R73, and a fourth resistor unit R74. The fourth bridge circuit 340 includes a first resistor unit R81, a second resistor unit R82, a third resistor unit R83, and a fourth resistor unit R84. Each of the resistor units R71 to R74 and R81 to R84 is configured by electrically connecting a plurality of MR elements 50 out of the plurality of MR elements 50.

[0151] One end of each of the first and fourth resistor units R71 and R74 is connected to a connection point P71. One end of each of the second and third resistor units R72 and R73 is connected to a connection point P72. The other end of each of the first and second resistor units R71 and R72 is connected to a connection point P73. The other end of each of the third and fourth resistor units R73 and R74 is connected to a connection point P74.

[0152] One end of each of the first and fourth resistor units R81, R84 is connected to a connection point P81. One end of each of the second and third resistor units R82, R83 is connected to a connection point P82. The other end of each of the first and second resistor units R81, R82 is connected to a connection point P83. The other end of each of the third and fourth resistor units R83, R84 is connected to a connection point P84.

[0153] The connection points P71 and P81, together with the connection points P51 and P61, are connected to the power supply terminal V3. The connection points P72 and P82, together with the connection points P52 and P62, are connected to the ground terminal G3. The connection points P73 and P83, together with the connection points P53 and P63, are connected to the first signal output terminal E31. The connection points P74 and P84, together with the connection points P54 and P64, are connected to the second signal output terminal E32.

[0154] The first resistor units R51, R61, R71, and R81 are arranged between the power supply terminal V3 and the first signal output terminal E31 in terms of the circuit configuration. The first resistor units R51, R61, R71, and R81 are connected in parallel in terms of the circuit configuration. The first resistor units R51, R61, R71, and R81 may be arranged to overlap each other when viewed from the Z direction. The first resistor unit R71 may be arranged below the first resistor unit R51. The first resistor unit R81 may be arranged above the first resistor unit R61.

[0155] The second resistor units R52, R62, R72, and R82 are arranged between the ground terminal G3 and the first signal output terminal E31 in terms of the circuit configuration. The second resistor units R52, R62, R72, and R82 are connected in parallel in terms of the circuit configuration. The second resistor units R52, R62, R72, and R82 may be arranged to overlap each other when viewed from the Z direction. The second resistor unit R72 may be arranged below the second resistor unit R52. The second resistor unit R82 may be arranged above the second resistor unit R62.

[0156] The third resistor units R53, R63, R73, and R83 are arranged between the ground terminal G3 and the second signal output terminal E32 in terms of the circuit configuration. The third resistor units R53, R63, R73, and R83 are connected in parallel in terms of the circuit configuration. The third resistor units R53, R63, R73, and R83 may be arranged to overlap each other when viewed from the Z direction. The third resistor unit R73 may be arranged below the third resistor unit R53. The third resistor unit R83 may be arranged above the third resistor unit R63.

[0157] The fourth resistor units R54, R64, R74, and R84 are arranged between the power supply terminal V3 and the second signal output terminal E32 in terms of the circuit configuration. The fourth resistor units R54, R64, R74, and R84 are connected in parallel in terms of the circuit configuration. The fourth resistor units R54, R64, R74, and R84 may be arranged to overlap each other when viewed from the Z direction. The fourth resistor unit R74 may be arranged below the fourth resistor unit R54. The fourth resistor unit R84 may be arranged above the fourth resistor unit R64.

[0158] Here, the MR elements included in the third bridge circuit 330 among the multiple MR elements 50 are denoted by the reference symbol 50C, and the MR elements included in the fourth bridge circuit 340 among the multiple MR elements 50 are denoted by the reference symbol 50D. The third bridge circuit 330 further includes a third wiring 331 that electrically connects the multiple MR elements 50C. The fourth bridge circuit 340 further includes a fourth wiring 341 that electrically connects the multiple MR elements 50D. First to fourth connection electrodes (not shown) of the magnetic sensor 3 electrically connect the power supply terminal V3, the ground terminal G3, the first signal output terminal E31, the second signal output terminal E32, the first wiring 311, the second wiring 321, the third wiring 331, and the fourth wiring 341.

[0159] Next, the configurations of the third and fourth bridge circuits 330, 340 will be described in detail with reference to Figures 21 and 22. Figure 21 is an explanatory diagram showing the magnetization directions of the magnetization fixed layers 52 of the first and third resistance units of each of the first to fourth bridge circuits 310, 320, 330, 340. Figure 22 is an explanatory diagram showing the magnetization directions of the magnetization fixed layers 52 of the second and fourth resistance units of each of the first to fourth bridge circuits 310, 320, 330, 340.

[0160] The third bridge circuit 330 and the fourth bridge circuit 340 are each disposed at a different position in the direction parallel to the Z direction from the first bridge circuit 310, the second bridge circuit 320, the multiple first yokes 40A, the multiple second yokes 40B, and the multiple third yokes 40C. In particular, in this embodiment, the third bridge circuit 330 is disposed below the multiple second yokes 40B. That is, the third bridge circuit 330 is disposed so as to sandwich the multiple second yokes 40B between itself and the first bridge circuit 310. Furthermore, the fourth bridge circuit 340 is disposed above the multiple third yokes 40C. That is, the fourth bridge circuit 340 is disposed so as to sandwich the multiple third yokes 40C between itself and the second bridge circuit 320.

[0161] The magnetic sensor 3 according to the present embodiment may or may not include the shields 61 and 62 of the fourth embodiment. When the magnetic sensor 3 includes the shields 61 and 62, the third bridge circuit 330 is disposed between the plurality of second yokes 40B and the shield 61, and the fourth bridge circuit 340 is disposed between the plurality of third yokes 40C and the shield 62.

[0162] The positional relationship between the multiple MR elements 50C and the multiple second yokes 40B of the third bridge circuit 330 is similar to the positional relationship between the multiple MR elements 50A and the multiple first yokes 40A of the first bridge circuit 310. The positional relationship between the multiple MR elements 50D and the multiple third yokes 40C of the fourth bridge circuit 340 is similar to the positional relationship between the multiple MR elements 50B and the multiple first yokes 40A of the second bridge circuit 320.

[0163] The third wiring 331 of the third bridge circuit 330 includes a plurality of third leads. The connection relationship between the plurality of MR elements 50C and the plurality of third leads is similar to the connection relationship between the plurality of MR elements 50A and the plurality of leads 12 (the connection relationship between the plurality of MR elements 50B and the plurality of leads 22). Although not shown, the overall shape of the third wiring 331 may be a meander shape, similar to the first and second wirings 311 and 321.

[0164] The fourth wiring 341 of the fourth bridge circuit 340 includes a plurality of fourth leads. The connection relationship between the plurality of MR elements 50D and the plurality of fourth leads is similar to the connection relationship between the plurality of MR elements 50A and the plurality of leads 12 (the connection relationship between the plurality of MR elements 50B and the plurality of leads 22). Although not shown, the overall shape of the fourth wiring 341 may be a meander shape, similar to the first and second wirings 311 and 321.

[0165] Next, we will explain the magnetization direction of the magnetization fixed layer 52 of the MR element 50. First, with reference to Fig. 21, we will explain the magnetization direction of the magnetization fixed layer 52 of the first and third resistance units R71, R73 of the third bridge circuit 330 and the first and third resistance units R81, R83 of the fourth bridge circuit 340.

[0166] In the first and third resistor units R71 and R73 of the third bridge circuit 330, the magnetization of the magnetization fixed layer 52 of the MR element 50C (first MR element) arranged near the first end face 40c of each of the second yokes 40B among the multiple MR elements 50C includes a component in the first magnetization direction (X direction). Also, the magnetization of the magnetization fixed layer 52 of the MR element 50C (second MR element) arranged near the second end face 40d of each of the multiple second yokes 40B among the multiple MR elements 50C includes a component in the second magnetization direction (-X direction).

[0167] In the first and third resistor units R81 and R83 of the fourth bridge circuit 340, the magnetization of the magnetization fixed layer 52 of the MR element 50D (first MR element) arranged near the first end face 40c of each of the third yokes 40C among the multiple MR elements 50D includes a component in the second magnetization direction (-X direction). Also, the magnetization of the magnetization fixed layer 52 of the MR element 50D (second MR element) arranged near the second end face 40d of each of the third yokes 40C among the multiple MR elements 50D includes a component in the first magnetization direction (X direction).

[0168] Next, with reference to FIG. 22, the magnetization directions of the magnetization fixed layers 52 of the second and fourth resistor sections R72, R74 of the third bridge circuit 330 and the second and fourth resistor sections R82, R84 of the fourth bridge circuit 340 will be described.

[0169] In the second and fourth resistor units R72 and R74 of the third bridge circuit 330, the magnetization of the magnetization fixed layer 52 of the MR element 50C (first MR element) arranged near the first end face 40c of each of the second yokes 40B among the multiple MR elements 50C includes a component in the second magnetization direction (-X direction). Also, the magnetization of the magnetization fixed layer 52 of the MR element 50C (second MR element) arranged near the second end face 40d of each of the multiple second yokes 40B among the multiple MR elements 50C includes a component in the first magnetization direction (X direction).

[0170] In the second and fourth resistor units R82 and R84 of the fourth bridge circuit 340, the magnetization of the magnetization fixed layer 52 of the MR element 50D (first MR element) arranged near the first end face 40c of each of the third yokes 40C among the multiple MR elements 50D includes a component in the first magnetization direction (X direction). Also, the magnetization of the magnetization fixed layer 52 of the MR element 50D (second MR element) arranged near the second end face 40d of each of the third yokes 40C among the multiple MR elements 50D includes a component in the second magnetization direction (-X direction).

[0171] 21 and 22, the magnetization of the magnetization fixed layer 52 of the MR element 50A of the first bridge circuit 310 arranged near the first end face 40c of the first yoke 40A and the magnetization of the magnetization fixed layer 52 of the MR element 50C of the third bridge circuit 330 arranged near the second end face 40d of the second yoke 40B contain components in opposite directions. Note that the two MR elements 50A and 50C may be arranged to overlap each other when viewed from the Z direction.

[0172] Similarly, the magnetization of the magnetization fixed layer 52 of the MR element 50A of the first bridge circuit 310 arranged near the second end face 40d of the first yoke 40A and the magnetization of the magnetization fixed layer 52 of the MR element 50C of the third bridge circuit 330 arranged near the first end face 40c of the second yoke 40B contain components in opposite directions. Note that the two MR elements 50A and 50C may be arranged to overlap each other when viewed from the Z direction.

[0173] 21 and 22, the magnetization of the magnetization fixed layer 52 of the MR element 50B of the second bridge circuit 320 arranged near the first end face 40c of the first yoke 40A and the magnetization of the magnetization fixed layer 52 of the MR element 50D of the fourth bridge circuit 340 arranged near the second end face 40d of the third yoke 40C contain components in opposite directions. Note that the two MR elements 50B and 50D may be arranged to overlap each other when viewed from the Z direction.

[0174] Similarly, the magnetization of the magnetization fixed layer 52 of the MR element 50B of the second bridge circuit 320 arranged near the second end face 40d of the first yoke 40A and the magnetization of the magnetization fixed layer 52 of the MR element 50D of the fourth bridge circuit 340 arranged near the first end face 40c of the third yoke 40C contain components in opposite directions. Note that the two MR elements 50B and 50D may be arranged to overlap each other when viewed from the Z direction.

[0175] Next, the two detection signals generated by the third bridge circuit 330 and the fourth bridge circuit 340 will be described with reference to FIGS. 20 to 22. First, the third bridge circuit 330 will be described. Like the first bridge circuit 310, the third bridge circuit 330 is configured to generate two detection signals corresponding to magnetic field components parallel to the Z direction by itself. The description of the first bridge circuit 310 in the third embodiment also applies to the third bridge circuit 330.

[0176] The manner in which the resistance value of each of the first to fourth resistor sections R71 to R74 changes when the direction of the input magnetic field component is the Z direction is the same as the manner in which the resistance value of each of the first to fourth resistor sections R51 to R54 of the first bridge circuit 310 changes when the direction of the input magnetic field component is the Z direction. Also, the manner in which the resistance value of each of the first to fourth resistor sections R71 to R74 changes when the direction of the input magnetic field component is the -Z direction is the same as the manner in which the resistance value of each of the first to fourth resistor sections R51 to R54 changes when the direction of the input magnetic field component is the -Z direction.

[0177] Next, the fourth bridge circuit 340 will be described. Like the second bridge circuit 320, the fourth bridge circuit 340 is configured to generate two detection signals corresponding to magnetic field components parallel to the Z direction by itself. The description of the second bridge circuit 320 in the third embodiment also applies to the fourth bridge circuit 340.

[0178] The manner in which the resistance value of each of the first to fourth resistor units R81 to R84 changes when the direction of the input magnetic field component is the Z direction is the same as the manner in which the resistance value of each of the first to fourth resistor units R61 to R64 of the second bridge circuit 320 changes when the direction of the input magnetic field component is the Z direction. Also, the manner in which the resistance value of each of the first to fourth resistor units R81 to R84 changes when the direction of the input magnetic field component is the -Z direction is the same as the manner in which the resistance value of each of the first to fourth resistor units R61 to R64 changes when the direction of the input magnetic field component is the -Z direction.

[0179] Next, at least one detection signal generated by the magnetic sensor 3 according to this embodiment will be described. The connection point P53 of the first bridge circuit 310, the connection point P63 of the second bridge circuit 320, the connection point P73 of the third bridge circuit 330, and the connection point P83 of the fourth bridge circuit 340 are connected to a first signal output terminal E31. The connection point P54 of the first bridge circuit 310, the connection point P64 of the second bridge circuit 320, the connection point P74 of the third bridge circuit 330, and the connection point P84 of the fourth bridge circuit 340 are connected to a second signal output terminal E32. In this embodiment, the potentials of the connection points P53, P63, P73, and P83 are equal to the potential of the first signal output terminal E31, and the potentials of the connection points P54, P64, P74, and P84 are equal to the potential of the second signal output terminal E32. The potentials of the first and second signal output terminals E31 and E32 change in the same manner as the potentials of the nodes P53 and P54 when the first bridge circuit 310 is connected alone, the potentials of the nodes P63 and P64 when the second bridge circuit 320 is connected alone, the potentials of the nodes P73 and P74 when the third bridge circuit 330 is connected alone, or the potentials of the nodes P83 and P84 when the fourth bridge circuit 340 is connected alone. The magnetic sensor 3 generates at least one detection signal corresponding to the potentials of the first and second signal output terminals E31 and E32 or the potential difference between the first and second signal output terminals E31 and E32. The at least one detection signal corresponds to the Z-direction magnetic field component of the magnetic field to be detected.

[0180] Other configurations, actions, and effects of this embodiment are the same as those of the third or fourth embodiment.

[0181] [Variations] Next, a modified example of the magnetic sensor 3 according to the present embodiment will be described with reference to Fig. 23. Fig. 23 is a side view showing a portion of the modified example of the magnetic sensor 3. In this modified example, the dimension of each of the multiple second yokes 40B in the direction parallel to the Z direction and the dimension of each of the multiple third yokes 40C in the direction parallel to the Z direction are larger than the dimension of each of the multiple first yokes 40A in the direction parallel to the Z direction. The dimension of each of the multiple second yokes 40B in the direction parallel to the Z direction and the dimension of each of the multiple third yokes 40C in the direction parallel to the Z direction may be the same as or different from each other.

[0182] The intensity of the output magnetic field component applied to the multiple MR elements 50C of the third bridge circuit 330 may be smaller than the intensity of the output magnetic field component applied to the multiple MR elements 50A of the first bridge circuit 310. According to the modified example, by increasing the dimension of each of the multiple second yokes 40B in the direction parallel to the Z direction, it is possible to increase the intensity of the output magnetic field component applied to the multiple MR elements 50C.

[0183] Similarly, the intensity of the output magnetic field components applied to the multiple MR elements 50D of the fourth bridge circuit 340 may be smaller than the intensity of the output magnetic field components applied to the multiple MR elements 50B of the second bridge circuit 320. According to this modification, by increasing the dimension of each of the multiple third yokes 40C in the direction parallel to the Z direction, it is possible to increase the intensity of the output magnetic field components applied to the multiple MR elements 50D.

[0184] [Sixth embodiment] Next, a sixth embodiment of the present invention will be described. First, the yoke in this embodiment will be described with reference to Fig. 24. Fig. 24 is a perspective view showing the yoke in this embodiment.

[0185] The yoke 140 in this embodiment is made of a soft magnetic material and is configured to induce a magnetic field around the yoke 140. Like the first yoke 40 in the first embodiment, the yoke 140 may be configured to increase the intensity of the X-direction magnetic field component of the magnetic field to be detected that is applied to the MR element 50. Alternatively, like the first yoke 40 in the third embodiment, the yoke 140 may be configured to induce an input magnetic field that includes an input magnetic field component in a direction parallel to the Z direction, to generate an output magnetic field.

[0186] 24, the yoke 140 has a shape that is long in a direction parallel to the Y direction. Furthermore, the cross-sectional shape of the yoke 140 in a cross section parallel to the XZ plane is trapezoidal.

[0187] The yoke 140 has a bottom surface 140a and a top surface 140b located opposite each other in a direction parallel to the Z direction, and a first end surface 140c and a second end surface 140d located opposite each other in a direction parallel to the X direction. Each of the first end surface 140c and the second end surface 140d is inclined with respect to a direction parallel to the Z direction. The distance between the first end surface 140c and the second end surface 140d in the direction parallel to the X direction decreases with increasing distance from the bottom surface 140a.

[0188] The yoke 140 may be used in place of the first yoke 40 in the first embodiment. In this case, a plurality of yokes 140 are provided in the magnetic sensor 1. The positional relationship between the plurality of yokes 140 and the plurality of MR elements 50 is the same as the positional relationship between the plurality of first yokes 40 and the plurality of MR elements 50 in the first embodiment.

[0189] Similarly, the yoke 140 may be used in place of the first yoke 40 in the third embodiment. In this case, a plurality of yokes 140 are provided in the magnetic sensor 3. The positional relationship between the plurality of yokes 140 and the plurality of MR elements 50 is the same as the positional relationship between the plurality of first yokes 40 and the plurality of MR elements 50 in the third embodiment.

[0190] Similarly, the yoke 140 may be used in place of the first yoke 40A, the second yoke 40B, and the third yoke 40C in the fourth or fifth embodiment. In this case, the magnetic sensor 3 is provided with a plurality of yokes 140. The positional relationship between the plurality of yokes 140 used in place of the plurality of first yokes 40A and the plurality of MR elements 50 is similar to the positional relationship between the plurality of first yokes 40A and the plurality of MR elements 50 in the fourth or fifth embodiment. The positional relationship between the plurality of yokes 140 used in place of the plurality of second yokes 40B and the plurality of MR elements 50 is similar to the positional relationship between the plurality of second yokes 40B and the plurality of MR elements 50 in the fourth or fifth embodiment. The positional relationship between the plurality of yokes 140 used in place of the plurality of third yokes 40C and the plurality of MR elements 50 is similar to the positional relationship between the plurality of third yokes 40C and the plurality of MR elements 50 in the fourth or fifth embodiment.

[0191] Furthermore, the positional relationship between the multiple yokes 140 used in place of the multiple first yokes 40A, the multiple yokes 140 used in place of the multiple second yokes 40B, and the multiple yokes 140 used in place of the multiple third yokes 40C is the same as the positional relationship between the multiple first yokes 40A, the multiple second yokes 40B, and the multiple third yokes 40C in the fourth or fifth embodiment.

[0192] The plurality of yokes 140 may be used in place of any one or two of the first yoke 40A, the second yoke 40B, and the third yoke 40C.

[0193] Furthermore, the multiple yokes 140 may be used in place of the multiple first yokes 40 in the second embodiment. In this case, each of the multiple yokes 140 is provided in a position rotated 90° around an axis parallel to the Z direction from the position shown in Fig. 24. The positional relationship between the multiple yokes 140 and the multiple MR elements 50 is the same as the positional relationship between the multiple first yokes 40 and the multiple MR elements 50 in the second embodiment.

[0194] Next, the effects of this embodiment will be described. Generally, a soft magnetic material such as a yoke is formed by plating using a photoresist mask having an opening formed on a seed layer. Therefore, due to the shape accuracy of the photoresist mask, the width of the yoke near the lower surface of the yoke (the distance between the first end face and the second end face) may become small, or the shape near the lower surface of the yoke may become variable. As a result, the strength of the magnetic field applied to the MR element 50 disposed near the lower surface of the yoke may become small, or the strength of the magnetic field applied to the MR element 50 may become variable.

[0195] In contrast, according to the present embodiment, by forming the cross-sectional shape of yoke 140 into a trapezoidal shape, it is possible to reduce the distance between first end face 140c and second end face 140d near bottom face 140a of yoke 140 and to suppress variations in this distance. As a result, according to the present embodiment, it is possible to suppress a reduction in the strength of the magnetic field applied to MR element 50 arranged near bottom face 140a of yoke 140 and to suppress variations in the strength of the magnetic field applied to MR element 50.

[0196] Furthermore, according to this embodiment, the distance between the upper surfaces 140b of two adjacent yokes 140 spaced apart in a direction parallel to the X direction can be made larger than the distance between the lower surfaces 140a of these two yokes 140. As a result, according to this embodiment, it is possible to easily form an insulating layer between the two yokes 140 and to reduce the distance between the two yokes 140. As a result, according to this embodiment, it is possible to increase the area occupied by multiple MR elements 50.

[0197] Other configurations, actions, and effects of this embodiment are the same as those of any of the first to fifth embodiments.

[0198] [Variations] Next, a modified example of yoke 140 according to the present embodiment will be described with reference to FIG. 25. FIG. 25 is a side view showing a modified example of yoke 140. In this modified example, first end face 140c of yoke 140 includes a first portion 140c1 connected to bottom face 140a and a second portion 140c2 connecting first portion 140c1 and top face 140b. Second end face 140d of yoke 140 includes a first portion 140d1 connected to bottom face 140a and a second portion 140d2 connecting first portion 140d1 and top face 140b.

[0199] The angle that the first portion 140c1 of the first end face 140c forms with the direction parallel to the Z direction is larger than the angle that the second portion 140c2 of the first end face 140c forms with the direction parallel to the Z direction. The angle that the first portion 140d1 of the second end face 140d forms with the direction parallel to the Z direction is larger than the angle that the second portion 140d2 of the second end face 140d forms with the direction parallel to the Z direction.

[0200] The present invention is not limited to the above-described embodiments and can be modified in various ways. For example, as long as the requirements of the claims are met, the arrangement of the first to fourth resistor portions is not limited to the examples shown in the embodiments and can be any arrangement. For example, the first resistor portion of the first bridge circuit and the third resistor portion of the second bridge circuit may be arranged to overlap each other when viewed from the Z direction, the second resistor portion of the first bridge circuit and the fourth resistor portion of the second bridge circuit may be arranged to overlap each other when viewed from the Z direction, the third resistor portion of the first bridge circuit and the first resistor portion of the second bridge circuit may be arranged to overlap each other when viewed from the Z direction, and the fourth resistor portion of the first bridge circuit and the second resistor portion of the second bridge circuit may be arranged to overlap each other when viewed from the Z direction.

[0201] Furthermore, in the magnetic sensor 3 according to the fifth embodiment, only one of the third bridge circuit 330 and the fourth bridge circuit 340 may be provided.

[0202] Furthermore, each of the magnetic sensor 1 according to the first embodiment, the magnetic sensor 2 according to the second embodiment, and the magnetic sensor 3 according to the third embodiment may include at least one shield according to the fourth embodiment.

[0203] In addition, a magnetic sensor device for detecting the earth's magnetic field may include a magnetic sensor 1 according to the first embodiment, a magnetic sensor 2 according to the second embodiment, and a magnetic sensor 3 according to any one of the third to fifth embodiments.

[0204] As described above, the magnetic sensor of the present invention includes a plurality of yokes each made of a soft magnetic material, a plurality of magnetoresistive elements configured to detect magnetic fields induced by the plurality of yokes, and a plurality of bridge circuits formed by the plurality of magnetoresistive elements and configured to generate at least one detection signal, respectively. The plurality of yokes include a plurality of first yokes arranged at the same position in a first direction. The plurality of bridge circuits include a first bridge circuit and a second bridge circuit arranged at different positions from each other in the first direction and sandwiching the plurality of first yokes. The first bridge circuit and the second bridge circuit are connected in parallel to each other.

[0205] In the magnetic sensor of the present invention, each of the multiple first yokes may have a first end face and a second end face located opposite each other in a second direction perpendicular to the first direction. The multiple magnetoresistive effect elements may include multiple element pairs. Each of the multiple element pairs may include a first element arranged near a first end face of one of the multiple first yokes and a second element arranged near a second end face of one of the multiple first yokes. Each of the first bridge circuit and the second bridge circuit may include a lead that electrically connects the first element and the second element and includes a portion that overlaps one of the multiple first yokes when viewed from the first direction.

[0206] In the magnetic sensor of the present invention, each of the multiple magnetoresistive elements may include a magnetization pinned layer having a magnetization whose direction is fixed and a free layer having a magnetization whose direction is changeable in response to an applied magnetic field. The multiple first yokes may include specific yokes. The magnetization of the magnetization pinned layer of the first element arranged near the first end face of the specific yoke in the first bridge circuit and the magnetization of the magnetization pinned layer of the second element arranged near the second end face of the specific yoke in the second bridge circuit may each include a component in a first magnetization direction. The magnetization of the magnetization pinned layer of the second element arranged near the second end face of the specific yoke in the first bridge circuit and the magnetization of the magnetization pinned layer of the first element arranged near the first end face of the specific yoke in the second bridge circuit may each include a component in a second magnetization direction opposite to the first magnetization direction.

[0207] In the magnetic sensor of the present invention, the multiple yokes may further include multiple second yokes and multiple third yokes arranged to sandwich the multiple first yokes. The multiple second yokes may be arranged at the same position in the first direction. The multiple third yokes may be arranged at the same position in the first direction. The first bridge circuit may be arranged between the multiple first yokes and the multiple second yokes. The second bridge circuit may be arranged between the multiple first yokes and the multiple third yokes. The multiple first yokes may not overlap with the multiple second yokes and the multiple third yokes when viewed from the first direction. The multiple bridge circuits may further include a third bridge circuit arranged at a position different from the first bridge circuit, the second bridge circuit, the multiple first yokes, the multiple second yokes, and the multiple third yokes in the first direction.

[0208] Furthermore, when the multiple yokes include multiple second yokes and multiple third yokes, the first bridge circuit may be disposed between the multiple first yokes and the multiple second yokes. The second bridge circuit may be disposed between the multiple first yokes and the multiple third yokes. The multiple bridge circuits may further include a third bridge circuit disposed between the first bridge circuit and the multiple second yokes, and a fourth bridge circuit disposed between the second bridge circuit and the multiple third yokes.

[0209] The magnetic sensor of the present invention may further include a plurality of connection electrodes each extending in a first direction. The arrangement of a plurality of first elements included in a first bridge circuit among the plurality of magnetoresistive effect elements may be the same as the arrangement of a plurality of second elements included in a second bridge circuit among the plurality of magnetoresistive effect elements. The first bridge circuit may include a first wiring that electrically connects the plurality of first elements. The second bridge circuit may include a second wiring that electrically connects the plurality of second elements. The plurality of connection electrodes may electrically connect the first wiring and the second wiring. The magnetic sensor of the present invention may further include a power supply terminal, a ground terminal, and at least one signal output terminal. The number of the plurality of connection electrodes may be the same as the total number of the power supply terminals, the ground terminals, and the at least one signal output terminal.

[0210] The magnetic sensor of the present invention may further include a first terminal and a second terminal. Each of the first bridge circuit and the second bridge circuit may include a resistive portion disposed between the first terminal and the second terminal. The resistive portion of the first bridge circuit and the resistive portion of the second bridge circuit may be disposed so as to overlap each other when viewed from the first direction. Each of the plurality of first yokes may have a first end face and a second end face positioned opposite each other in a second direction perpendicular to the first direction. The plurality of magnetoresistive effect elements may include a plurality of element pairs. Each of the plurality of element pairs may include a first element disposed near a first end face of one of the plurality of first yokes and a second element disposed near a second end face of one of the plurality of first yokes. Each of the plurality of magnetoresistive effect elements may include a magnetization fixed layer having a magnetization whose direction is fixed and a free layer having a magnetization whose direction is changeable in response to an applied magnetic field. The magnetization of the magnetization fixed layer of the first element in the resistive section of the first bridge circuit and the magnetization of the magnetization fixed layer of the second element in the resistive section of the second bridge circuit may each include a component in a first magnetization direction. The magnetization of the magnetization fixed layer of the second element in the resistive section of the first bridge circuit and the magnetization of the magnetization fixed layer of the first element in the resistive section of the second bridge circuit may each include a component in a second magnetization direction opposite to the first magnetization direction.

[0211] The magnetic sensor of the present invention may further include a power supply terminal, a ground terminal, and a signal output terminal. Each of the first bridge circuit and the second bridge circuit may include a first resistor disposed between the power supply terminal and the signal output terminal and a second resistor disposed between the ground terminal and the signal output terminal. Each of the multiple first yokes may have a first end face and a second end face located opposite each other in a second direction perpendicular to the first direction. The multiple magnetoresistive effect elements may include multiple element pairs. Each of the multiple element pairs may include a first element disposed near a first end face of one of the multiple first yokes and a second element disposed near a second end face of one of the multiple first yokes. Each of the multiple magnetoresistive effect elements may include a magnetization fixed layer having a magnetization direction that is fixed and a free layer having a magnetization direction that is changeable in response to an applied magnetic field. The magnetization of the magnetization fixed layer of the first element in the first resistance section of one of the first and second bridge circuits and the magnetization of the magnetization fixed layer of the second element in the second resistance section of one of the bridge circuits may each include a component in a first magnetization direction. The magnetization of the magnetization fixed layer of the second element in the first resistance section of one of the bridge circuits and the magnetization of the magnetization fixed layer of the first element in the second resistance section of one of the bridge circuits may each include a component in a second magnetization direction opposite to the first magnetization direction.

[0212] The magnetic sensor of the present invention may further include at least one shield arranged to overlap the plurality of bridge circuits when viewed from the first direction.

[0213] A method for manufacturing a magnetic sensor according to a first aspect of the present invention includes the steps of forming a plurality of magnetoresistive elements, each of which includes an initial magnetoresistive element including an initial magnetization pinned layer and a free layer, which will later become a magnetization pinned layer, forming a plurality of first-type elements by pinning the magnetization direction of the initial magnetization pinned layer in some of the initial magnetoresistive elements using a laser beam and a first external magnetic field including a component in a first magnetic field direction, and forming a plurality of second-type elements by pinning the magnetization direction of the initial magnetization pinned layer in other of the initial magnetoresistive elements using a laser beam and a second external magnetic field including a component in a second magnetic field direction.

[0214] A method for manufacturing a magnetic sensor according to a second aspect of the present invention includes the steps of forming a plurality of magnetoresistive elements, each of which includes an initial magnetoresistive element including an initial magnetization fixed layer and a free layer, each of which will later become a magnetization fixed layer, and an annealing process of heating the initial magnetoresistive elements at a predetermined temperature while applying an external magnetic field in one direction parallel to a first direction so as to fix the magnetization direction of the initial magnetization fixed layer. [Explanation of symbols]

[0215] 1...magnetic sensor, 5...substrate, 12, 22...leads, 31 to 34...connecting electrodes, 40...first yoke, 50, 50A, 50B...MR element, 51...antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 110...first bridge circuit, 111...first wiring, 120...second bridge circuit, 121...second wiring.

Claims

1. a plurality of yokes each made of a soft magnetic material; a plurality of magnetoresistive elements configured to detect magnetic fields induced by the plurality of yokes; a plurality of bridge circuits formed by the plurality of magnetoresistive effect elements and configured to generate at least one detection signal; the plurality of yokes include a plurality of first yokes arranged at the same position in a first direction; the plurality of bridge circuits include a first bridge circuit and a second bridge circuit that are arranged at different positions in the first direction and that are arranged so as to sandwich the plurality of first yokes; The magnetic sensor is characterized in that the first bridge circuit and the second bridge circuit are connected in parallel with each other.

2. each of the plurality of first yokes has a first end surface and a second end surface positioned opposite to each other in a second direction perpendicular to the first direction; the plurality of magnetoresistive elements include a plurality of element pairs, each of the plurality of element pairs includes a first element disposed near the first end surface of one of the plurality of first yokes and a second element disposed near the second end surface of the one of the plurality of first yokes; 2. The magnetic sensor according to claim 1, wherein each of the first bridge circuit and the second bridge circuit includes a lead that electrically connects the first element and the second element and includes a portion that overlaps with the one of the plurality of first yokes when viewed from the first direction.

3. each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization direction fixed, and a free layer having a magnetization direction changeable in response to an applied magnetic field; the plurality of first yokes include a specific yoke, the magnetization of the magnetization fixed layer of the first element arranged in the first bridge circuit near the first end surface of the specific yoke, and the magnetization of the magnetization fixed layer of the second element arranged in the second bridge circuit near the second end surface of the specific yoke each include a component in a first magnetization direction; 3. The magnetic sensor according to claim 2, wherein the magnetization of the magnetization fixed layer of the second element arranged near the second end face of the specific yoke in the first bridge circuit and the magnetization of the magnetization fixed layer of the first element arranged near the first end face of the specific yoke in the second bridge circuit each include a component of a second magnetization direction opposite to the first magnetization direction.

4. the plurality of yokes further includes a plurality of second yokes and a plurality of third yokes arranged so as to sandwich the plurality of first yokes, the plurality of second yokes are arranged at the same position in the first direction, 2. The magnetic sensor according to claim 1, wherein the plurality of third yokes are arranged at the same position in the first direction.

5. the first bridge circuit is disposed between the plurality of first yokes and the plurality of second yokes; 5. The magnetic sensor according to claim 4, wherein the second bridge circuit is disposed between the plurality of first yokes and the plurality of third yokes.

6. 6. The magnetic sensor according to claim 5, wherein the plurality of first yokes do not overlap the plurality of second yokes and the plurality of third yokes when viewed from the first direction.

7. 5. The magnetic sensor according to claim 4, wherein the plurality of bridge circuits further includes a third bridge circuit arranged at a position different from the first bridge circuit, the second bridge circuit, the plurality of first yokes, the plurality of second yokes, and the plurality of third yokes in the first direction.

8. the first bridge circuit is disposed between the plurality of first yokes and the plurality of second yokes; the second bridge circuit is disposed between the plurality of first yokes and the plurality of third yokes; 5. The magnetic sensor according to claim 4, wherein the plurality of bridge circuits further include a third bridge circuit arranged to sandwich the plurality of second yokes between the first bridge circuit and the fourth bridge circuit, and a fourth bridge circuit arranged to sandwich the plurality of third yokes between the second bridge circuit and the fourth bridge circuit.

9. 5. The magnetic sensor according to claim 4, wherein the dimension of each of the plurality of second yokes in the first direction and the dimension of each of the plurality of third yokes in the first direction are greater than the dimension of each of the plurality of first yokes in the first direction.

10. further comprising a plurality of connection electrodes each extending in the first direction; an arrangement of a plurality of first elements included in the first bridge circuit among the plurality of magnetoresistive effect elements is the same as an arrangement of a plurality of second elements included in the second bridge circuit among the plurality of magnetoresistive effect elements; the first bridge circuit includes a first wiring that electrically connects the plurality of first elements; the second bridge circuit includes second wiring that electrically connects the plurality of second elements; 2. The magnetic sensor according to claim 1, wherein the plurality of connection electrodes electrically connect the first wiring and the second wiring.

11. Furthermore, a power terminal; A ground terminal, at least one signal output terminal; 11. The magnetic sensor according to claim 10, wherein the number of the plurality of connection electrodes is the same as the total number of the power supply terminals, the ground terminals, and the at least one signal output terminal.

12. Further, a first terminal; a second terminal; each of the first bridge circuit and the second bridge circuit includes a resistor portion disposed between the first terminal and the second terminal; the resistor portion of the first bridge circuit and the resistor portion of the second bridge circuit are arranged to overlap each other when viewed from the first direction, each of the plurality of first yokes has a first end surface and a second end surface positioned opposite to each other in a second direction perpendicular to the first direction; the plurality of magnetoresistive elements include a plurality of element pairs, each of the plurality of element pairs includes a first element disposed near the first end surface of one of the plurality of first yokes and a second element disposed near the second end surface of the one of the plurality of first yokes; each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization direction fixed, and a free layer having a magnetization direction changeable in response to an applied magnetic field; the magnetization of the magnetization fixed layer of the first element in the resistance portion of the first bridge circuit and the magnetization of the magnetization fixed layer of the second element in the resistance portion of the second bridge circuit each include a component in a first magnetization direction, 2. The magnetic sensor according to claim 1, wherein the magnetization of the magnetization fixed layer of the second element in the resistance portion of the first bridge circuit and the magnetization of the magnetization fixed layer of the first element in the resistance portion of the second bridge circuit each include a component of a second magnetization direction opposite to the first magnetization direction.

13. Furthermore, a power terminal; A ground terminal, a signal output terminal; each of the first bridge circuit and the second bridge circuit includes a first resistor portion disposed between the power supply terminal and the signal output terminal, and a second resistor portion disposed between the ground terminal and the signal output terminal; each of the plurality of first yokes has a first end surface and a second end surface positioned opposite to each other in a second direction perpendicular to the first direction; the plurality of magnetoresistive elements include a plurality of element pairs, each of the plurality of element pairs includes a first element disposed near the first end surface of one of the plurality of first yokes and a second element disposed near the second end surface of the one of the plurality of first yokes; each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization direction fixed, and a free layer having a magnetization direction changeable in response to an applied magnetic field; the magnetization of the magnetization fixed layer of the first element in the first resistance unit of one of the first bridge circuits and the second bridge circuit, and the magnetization of the magnetization fixed layer of the second element in the second resistance unit of the one of the bridge circuits each include a component in a first magnetization direction; 2. The magnetic sensor according to claim 1, wherein the magnetization of the magnetization fixed layer of the second element in the first resistance portion of one of the bridge circuits and the magnetization of the magnetization fixed layer of the first element in the second resistance portion of one of the bridge circuits each include a component of a second magnetization direction opposite to the first magnetization direction.

14. 14. The magnetic sensor according to claim 1, further comprising at least one shield arranged to overlap the plurality of bridge circuits when viewed from the first direction.

15. 2. A method for manufacturing the magnetic sensor according to claim 1, comprising the steps of: each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization direction fixed, and a free layer having a magnetization direction changeable in response to an applied magnetic field; the plurality of magnetoresistive effect elements include a plurality of first type elements and a plurality of second type elements, the magnetization of the magnetization fixed layer in the plurality of first type elements includes a component in a first magnetization direction; the magnetization of the magnetization fixed layer in the plurality of second-type elements includes a component of a second magnetization direction opposite to the first magnetization direction; The manufacturing method includes forming the plurality of magnetoresistive effect elements, The step of forming the plurality of magnetoresistive effect elements includes: forming a plurality of initial magnetoresistive elements each including an initial magnetization fixed layer that will later become the magnetization fixed layer and the free layer; forming the plurality of first-type elements by fixing the magnetization direction of the initial magnetization fixed layer in some of the plurality of initial magnetoresistive effect elements using a laser beam and a first external magnetic field including a component in a first magnetic field direction; and a step of fixing the magnetization direction of the initial magnetization fixed layer in other elements of the plurality of initial magnetoresistive effect elements using laser light and a second external magnetic field including a component in a second magnetic field direction, thereby forming the plurality of second type elements.

16. 2. A method for manufacturing the magnetic sensor according to claim 1, comprising the steps of: each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization direction fixed, and a free layer having a magnetization direction changeable in response to an applied magnetic field; The manufacturing method includes forming the plurality of magnetoresistive effect elements, The step of forming the plurality of magnetoresistive effect elements includes: forming a plurality of initial magnetoresistive elements each including an initial magnetization fixed layer that will later become the magnetization fixed layer and the free layer; and performing an annealing process in which the plurality of initial magnetoresistive effect elements are heated at a predetermined temperature while applying an external magnetic field in one direction parallel to the first direction so that the direction of magnetization of the initial magnetization fixed layer is fixed.

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