Silicon precursor

Abstract

To provide a specific silylamine compound useful as a precursor in vapor deposition of a silicon-containing material on the surface of a microelectronic device, a method for preparing the same, and a method for depositing a silicon-containing film on a microelectronic device substrate.SOLUTION: The silylamine compound is represented by general formula (I). The compounds can be utilized with an optional co-reactant to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates generally to certain silicon precursor compounds useful for the deposition of silicon-containing films on microelectronic devices. [Background technology]

[0002] Low-temperature deposition of silicon-based thin films is of fundamental importance to modern semiconductor device fabrication and methods. For the past several decades, silicon dioxide thin films have been utilized as essential structural components of integrated circuits (ICs), including microprocessors, logic, and memory-based devices. Silicon dioxide is the dominant material in the semiconductor industry and has been used as the insulating dielectric material in virtually all commercially available silicon-based devices. Silicon dioxide has been used as an interconnect dielectric, capacitor, and gate dielectric material for many years.

[0003] The conventional industrial approach to depositing high-purity SiO2 films has been to utilize tetraethyl orthosilicate (TEOS) as a thin-film precursor for the vapor deposition of such films. TEOS is a stable liquid material that has been used as a silicon source reagent in chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and atomic layer deposition (ALD) to achieve high-purity thin films of SiO2. This silicon source reagent can also be used for other thin-film deposition methods (e.g., focused ion beam, electron beam, and other energy means for forming thin films).

[0004] As integrated circuit device dimensions continue to decrease, with corresponding advances in lithographic scaling methods and shrinking device geometries, new deposition materials and methods for forming high integrity SiO2 thin films are correspondingly needed. Improved silicon-based precursors (and co-reactants) are needed to form SiO2 films and other silicon-containing thin films, such as Si3N4, SiC, and doped SiO2 films, that can be deposited at low temperatures, such as temperatures below 400°C and below 200°C. xIt is desirable to form high-k thin films. To achieve these low deposition temperatures, chemical precursors must decompose cleanly to yield the desired film.

[0005] Achieving low-temperature films also requires the use and development of deposition methods that ensure the formation of uniform, conformal silicon-containing films. Therefore, chemical vapor deposition (CVD) and atomic layer deposition (ALD) methods are being refined and implemented in tandem with the ongoing search for reactive precursor compounds that are stable in handling, vaporization, and transport to the reactor, yet exhibit the ability to cleanly decompose at low temperatures to form desired thin films. A fundamental challenge in this endeavor is achieving a balance between precursor thermal stability and precursor compatibility for high-purity, low-temperature film growth methods while maintaining the desired electronic and mechanical properties of the films thus produced. Summary of the Invention

[0006] The present invention provides certain silylamine compounds believed to be useful as precursors in the deposition of silicon-containing films on microelectronic device substrates. In particular, the present invention provides compounds of formula (I): TIFF2026028256000002.tif54170, In the formula, R 1 , R 2 and R 3 are each independently hydrogen, C1 to C 10 selected from alkyl, C3-C8 cycloalkyl, aryl and benzyl; and n is 0, 1 or 2.

[0007] In this deposition method, exemplary compounds of formula (I) include trimethylsilylethylenetriamine and trimethylsilylethylenediamine. [Brief explanation of the drawings]

[0008] [Figure 1] 1H NMR of trimethylsilyldiethylenetriamine, i.e., the compound of formula (I), where R1, R2, and R3 are each methyl. [Figure 2] Differential scanning calorimetry (DSC) of trimethylsilyldiethylenetriamine. [Figure 3] This is the thermogravimetric analysis (TGA) of trimethylsilyldiethylenetriamine. This data shows good thermal stability and high volatility with zero residue. In this graph, T50 is the temperature at which 50% weight loss occurs, and the measured T50 was 156.84°C. DETAILED DESCRIPTION OF THE INVENTION

[0009] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term "or" is generally used in its sense including "and / or" unless the content clearly dictates otherwise.

[0010] The term "about" generally refers to a range of numbers that are considered equivalent to the recited value (e.g., have the same function or result). In many instances, the term "about" can include numbers that are rounded to the nearest significant figure.

[0011] Numerical ranges expressed using endpoints include all numbers subsumed within that range (eg, 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5).

[0012] In a first aspect, the present invention provides a compound of formula (I): Provide the compound TIFF2026028256000003.tif54170, In the formula, R 1 , R 2 and R 3 are each independently hydrogen, C1 to C 10 and n is selected from alkyl, C3-C8 cycloalkyl, aryl, and benzyl, and n is 0, 1, or 2, with the proviso that when n is 1, the compound of formula (I) is other than trimethylsilylethylenetriamine.

[0013] When n=0, the compound of formula (I) becomes: TIFF2026028256000004.tif43170

[0014] When n=1, the compound of formula (I) becomes: TIFF2026028256000005.tif43170

[0015] The compound of formula (I) has the formula (A): TIFF2026028256000006.tif27170 (wherein X is halo) The compound Formula (B): The compound can be prepared by contacting the compound of formula (I) with a compound of formula (II) in the presence of a base.

[0016] In the above process, X can be selected from chloro, bromo, iodo or fluoro.

[0017] As used herein, "C1-C 10 The term "alkyl" refers to an aliphatic hydrocarbon group having 1 to 10 carbon atoms. Exemplary groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, sec-butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and the like.

[0018] As used herein, the term "C3-C8 cycloalkyl" refers to an alicyclic group having from 3 to 10 carbon atoms and includes groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl.

[0019] As used herein, the term "aryl" refers to an aromatic ring composed solely of carbon and hydrogen. Exemplary groups include phenyl, biphenyl, naphthyl, and the like.

[0020] Bases useful in this method include bases that are strong enough to deprotonate the amine group on the compound of formula (B) to allow substitution of the halogen atom on the compound of formula (A), i.e., compounds typically used in organic synthesis as non-nucleophilic bases. In this regard, exemplary bases include triethylamine, pyrrolidine, tetramethylguanidine, 1,4-diazabicyclo[2.2.2]octane (DABCO), 1,5-diazabicyclo[4.3.0]non-5-ene (CAS No. 3001-72-7, also known as "DBN"), 4-dimethylaminopyridine (CAS No. 1122-58-3, also known as "DMAP"), 1,5,7-triazabicyclo[4.4.0]dec-5-ene (CAS No. 5807-14-7, also known as "TBD"), and 1,8-diazabicyclo[5.4.0]undec-7-ene (CAS No. 6674-22-2, also known as "DBU").

[0021] This method can be carried out using a suitable polar aprotic solvent that does not interfere with the reaction, such as tetrahydrofuran, diethyl ether, toluene, or dichloromethane. Generally, the silicon-containing compound (A) is combined with a base as described herein, and then the amine compound (B) is added to the reaction mixture, for example, at room temperature. Once the reaction is complete, the solid by-products are removed by filtration, and the remaining filtrate can be purified by fractional distillation to form a colorless liquid product (I).

[0022] The compounds of formula (I) are believed to be useful as precursors in the deposition of silicon-containing films, particularly films on the surface of microelectronic devices. In certain embodiments, the films also contain nitrogen and / or oxygen and / or carbon.

[0023] As used herein, the term silicon-containing film refers to films such as silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, silicon oxycarbonitride, low-k thin silicon-containing films, high-k gate silicate films, low-temperature silicon epitaxial films, and the like.

[0024] Thus, the compounds of formula (I) above can be used to form high-purity thin silicon-containing films by any suitable deposition technique, such as chemical vapor deposition (CVD), digital (pulsed) CVD, atomic layer deposition (ALD), pulsed plasma processes, plasma-enhanced cyclic chemical vapor deposition (PECCVD), flowable chemical vapor deposition (FCVD), or plasma-enhanced ALD-like processes. In certain embodiments, such deposition methods can be utilized to form silicon-containing films on microelectronic devices to form films having thicknesses of about 20 angstroms to about 2000 angstroms.

[0025] Figure 1 shows the R 1 , R 2 and R 3 is methyl, i.e., trimethylsilyldiethylenetriamine, i.e., the compound of formula (I) 1 H NMR.

[0026] FIG. 2 is a differential scanning calorimetry (DSC) of trimethylsilyldiethylenetriamine.

[0027] Figure 3 shows the thermogravimetric analysis (TGA) of trimethylsilyldiethylenetriamine. The data shows good thermal stability, high volatility with zero residue. In this graph, T50 is the temperature at which 50% weight loss occurs, and the measured T50 was 156.84°C.

[0028] In the methods of the present invention, the compounds can be reacted with the desired microelectronic device substrate in any suitable manner, for example, in a single wafer CVD, ALD and / or PECVD or PEALD chamber (i.e., a "reaction zone"), or in a furnace containing multiple wafers.

[0029] Alternatively, the method of the present invention can be carried out as an ALD or ALD-like method. As used herein, the term "ALD or ALD-like" refers to a method in which (i) reactants including the silicon precursor compound of formula (I) and an oxidizing or reducing gas are sequentially introduced into a reactor, such as a single-wafer ALD reactor, a semi-batch ALD reactor, or a batch furnace ALD reactor, or (ii) reactants including the silicon precursor compound of formula (I) and an oxidizing or reducing gas are exposed to the substrate or microelectronic device surface by moving or rotating the substrate to different sections of the reactor, and each section is separated by an inert gas curtain, i.e., a spatial ALD reactor or a roll-to-roll ALD reactor.

[0030] In one embodiment, the deposition conditions include a temperature of about room temperature (e.g., about 23°C) to about 1000°C, or about 100°C to about 1000°C, or about 450°C to about 1000°C, and a pressure of about 0.5 to about 1000 Torr. In another embodiment, the deposition conditions include a temperature of about 100°C to about 800°C, or about 500°C to about 750°C.

[0031] In general, the desired film produced using the precursor compounds of formula (I) can be tailored by the selection of each compound in combination with the use of a reducing or oxidizing co-reactant. For example, see Scheme 1 below, which illustrates how the precursors of formula (I) can be used in a vapor deposition process: TIFF2026028256000008.tif41170 Scheme 1

[0032] In one embodiment, the deposition method may further include a step of exposing the precursor to a gas such as H, H plasma, H / O mixture, water, N, O, N O plasma, NH, NH plasma, N, or N plasma. For example, an oxidizing gas such as O, O, N, water vapor, alcohol, or oxygen plasma may be used. In one embodiment, the precursor of Formula (I) is utilized in an ALD process using O as the oxidizing gas. In certain embodiments, the oxidizing gas further comprises an inert gas such as argon, helium, nitrogen, or a combination thereof. In another embodiment, the oxidizing gas further comprises nitrogen, which can react with the precursor of Formula (I) under plasma conditions to form a silicon oxynitride film.

[0033] Thus, in a further aspect, the present invention provides a method for depositing a silicon-containing film on a microelectronic device substrate, comprising: providing the substrate with a silicon-containing compound of formula (I): with a compound of formula (I) or (II), In the formula, R 1 , R 2 and R 3 are each independently hydrogen, C1 to C 10 wherein n is selected from alkyl, C3-C8 cycloalkyl, aryl and benzyl, and n is 0, 1 or 2 in the reaction zone under deposition conditions.

[0034] In certain embodiments, the methods of this aspect include the use of one or more co-reactants selected from an oxidizing gas, a reducing gas, and a hydrocarbon.

[0035] In another embodiment, the deposition method may further include exposing the film to a reducing gas. In a specific embodiment of the present invention, the reducing gas is selected from the group consisting of H, hydrazine (NH), methylhydrazine, t-butylhydrazine, 1,1-dimethylhydrazine, 1,2-dimethylhydrazine, and NH. In the case of such a nitrogen-containing reducing gas, deposition techniques such as atomic layer deposition can be used to form materials containing silicon and nitrogen.

[0036] Compounds of formula (I) are believed to be capable of low-temperature PECVD and / or PEALD formation of silicon-containing films as well as high-temperature ALD. Such compounds exhibit high volatility and chemical reactivity, yet are stable to thermal decomposition at temperatures associated with precursor volatilization or vaporization, allowing for consistent and repeatable delivery of the resulting precursor vapor to the deposition zone or reaction chamber.

[0037] While using the precursor compound of formula (I), the incorporation of carbon into such films can be achieved by utilizing a co-reactant such as carbon in the form of methane, ethane, ethylene, or acetylene to further introduce carbon content into the silicon-containing film, thereby producing silicon carbide.

[0038] The deposition methods disclosed herein can include one or more purge gases and / or carrier gases. A purge gas is an inert gas used to purge unconsumed reactants and / or reaction by-products and does not react with the precursors. Exemplary purge gases include, but are not limited to, argon, nitrogen, helium, neon, hydrogen, and mixtures thereof. In certain embodiments, a purge gas, such as Ar, is supplied to the reactor at a flow rate ranging from about 10 to about 2000 sccm for about 0.1 to 1000 seconds to purge unreacted materials and any by-products that may remain in the reactor.

[0039] Each step of supplying the silicon precursor compound, oxidizing gas, reducing gas, and / or other precursors, source gases, and / or reagents can be performed by changing the order for supplying them and / or by changing the stoichiometry of the resulting dielectric film.

[0040] Energy is added to the silicon precursor compound of formula (I) and at least one of an oxidizing gas, a reducing gas, or a combination thereof to induce a reaction and form a silicon-containing film on a microelectronic device substrate. Such energy can be provided by, but is not limited to, heat, pulsed heat, plasma, pulsed plasma, helicon plasma, high-density plasma, inductively coupled plasma, X-rays, electron beams, photons, remote plasma methods, and combinations thereof. In certain embodiments, a secondary RF frequency source can be used to modify the plasma characteristics at the substrate surface. In embodiments in which deposition involves plasma, the plasma generation method can include a direct plasma generation method in which the plasma is generated directly in the reactor, or alternatively, a remote plasma generation method in which the plasma is generated "remote" from the reaction zone and the substrate and fed into the reactor.

[0041] As used herein, the term "microelectronic device" corresponds to semiconductor substrates, including 3D NAND structures, flat panel displays, and microelectromechanical systems (MEMS), fabricated for use in microelectronic, integrated circuit, or computer chip applications. It should be understood that the term "microelectronic device" is not meant to be limiting in any way and includes any substrate that contains n-type metal oxide semiconductor (nMOS) and / or p-type metal oxide semiconductor (pMOS) transistors and that ultimately becomes a microelectronic device or microelectronic assembly. Such microelectronic devices include at least one substrate that can be selected from, for example, silicon, SiO2, Si3N4, OSG, FSG, silicon carbide, hydrogenated silicon carbide, silicon nitride, hydrogenated silicon nitride, silicon carbonitride, hydrogenated silicon carbonitride, boron nitride, antireflective coatings, photoresist, germanium, germanium-containing, boron-containing, Ga / As, flexible substrates, porous inorganic materials, metals such as copper and aluminum, and diffusion barrier layers such as, but not limited to, TiN, Ti(C)N, TaN, Ta(C)N, Ta, W, or WN. The films are compatible with various subsequent processing steps, such as, for example, chemical mechanical planarization (CMP) and anisotropic etching methods.

[0042] In atomic layer deposition, successive processing steps are commonly referred to as "pulses" or cycles. Thus, ALD processes are based on controlled, self-limiting surface reactions of precursor chemicals. Gas-phase reactions are avoided by contacting the substrate with precursors in an alternating, sequential manner. Gas-phase reactants are separated from one another in time and on the substrate surface, for example, by removing excess reactant and / or reactant byproducts from the reaction chamber between reaction pulses. In some embodiments, one or more substrate surfaces are contacted in an alternating, sequential manner with two or more gas-phase precursors or reactants. Contacting a substrate surface with a gas-phase reactant means that the reactant vapor is in contact with the substrate surface within the reaction zone for a limited period of time. In other words, the substrate surface is exposed to each gas-phase reactant for a limited period of time.

[0043] In certain embodiments, the pulse time of the precursor compounds (i.e., the duration of precursor exposure to the substrate) ranges from about 1 to 30 seconds. If a purge step is utilized, the duration is about 1 to 20 seconds or 1 to 30 seconds. In other embodiments, the pulse time of the co-reactant ranges from 5 to 60 seconds.

[0044] For example, in atomic layer deposition (ALD), a compound of formula (I) can be utilized as one "silicon" precursor, and for the desired silicon-nitride film, a nitrogen-containing material can be utilized as a co-reactant or another precursor. The nitrogen-containing material can be organic (e.g., t-butylhydrazine) or inorganic (e.g., NH3). In certain embodiments, ALD can be used to form materials containing silicon and nitrogen. Such materials can comprise, consist essentially of, or consist of silicon nitride, and / or have other components, depending on the co-reactant selected in a particular case.

[0045] Briefly, a substrate including at least one surface can be heated to a suitable deposition temperature, e.g., in the range of 150°C to 700°C, typically at a pressure of, e.g., about 0.5 to 50 Torr. In other embodiments, the temperature is about 200°C to 300°C or 500°C to 650°C. The deposition temperature is generally maintained below the thermal decomposition temperature of the reactants, but high enough to avoid condensation of the reactants and to provide activation energy for the desired "selective" surface reaction.

[0046] The surface of the substrate is contacted with a vapor-phase first reactant. In certain embodiments, a pulse of the vapor-phase first reactant is provided to a reaction zone containing the substrate. In other embodiments, the substrate is moved into a reaction space containing the vapor-phase first reactant. Conditions are generally selected so that about one monolayer or less of the first reactant is self-limitingly adsorbed onto the substrate surface. An appropriate contact time can be readily determined by one of ordinary skill in the art based on the specific conditions, substrate, and reactor configuration. Excess first reactant and reaction byproducts, if present, are removed from the substrate surface, for example, by purging with an inert gas or by removing the substrate from the presence of the first reactant. Purging refers to the removal of vapor-phase precursor and / or byproducts from the substrate surface, for example, by evacuating the chamber with a vacuum pump and / or replacing the gas in the reactor with an inert gas such as argon or nitrogen. In certain embodiments, the purge time is about 0.05 to 20 seconds, about 1 to 10 seconds, or about 1 to 2 seconds. However, other purge times can be utilized as needed, such as when highly conformal process coverage of very high aspect ratio structures or other structures with complex surface morphology is required.

[0047] The substrate surface can then be contacted with a second gaseous reactant in the vapor phase, i.e., a second precursor or co-reactant, such as an oxidizing or reducing gas. In certain embodiments, a pulse of the second gaseous reactant is provided to the reaction space containing the substrate. In other embodiments, the substrate is moved into the reaction space containing the second reactant in the vapor phase. Excess second reactant and gaseous byproducts of the surface reaction, if present, are removed from the substrate surface. The contacting and removing steps are repeated until a thin film of the desired thickness is selectively formed on the first surface of the substrate, with each cycle generally leaving no more than about one molecular monolayer. Additional steps can be included, including alternating sequential contact of the substrate surface with other reactants, to form more complex materials, such as ternary materials.

[0048] Each step in each cycle is generally self-limiting. Excess reactant precursor is supplied at each step to saturate susceptible structure surfaces. Surface saturation ensures reactant occupation of all available reaction sites (subject to constraints, e.g., physical size or "steric hindrance"), thus ensuring excellent process coverage. Typically, less than one molecular layer of material is deposited in each cycle, although in some embodiments, more than one molecular layer is deposited during a cycle.

[0049] Removing excess reactants can include evacuating a portion of the contents of the reaction zone and / or purging the reaction zone with helium, nitrogen, or another inert gas. In certain embodiments, purging can include turning off the flow of reactive gas while continuing to flow an inert carrier gas through the reaction space. In another embodiment, the purging step can use a vacuum step to remove excess reactants from the surface.

[0050] The reactor that can be used to grow such thin films can be used for the deposition described herein. Such reactors include ALD reactors and CVD reactors equipped with appropriate devices and means for providing precursors in a "pulsed" manner. According to certain embodiments, showerhead reactors can be used. Examples of suitable reactors that can be used include commercially available devices and home-built reactors, and are known to those skilled in the art of CVD and / or ALD.

[0051] Exemplary compounds of formula (I) include those shown in the table below: TIFF2026028256000010.tif54170TIFF2026028256000011.tif96170 [Example]

[0052] Example 1 -- Trimethylsilylethylenetriamine A mixture of trimethylsilyl chloride (50.0 g, 0.41 mol) and bicyclic amidine base (DBU) (63.06 g, 0.41 mol) in diethyl ether (500 mL) was stirred at room temperature under a nitrogen atmosphere for 1 hour. Diethylenetriamine (14.24 g, 0.14 mol) was added to the reaction mixture and stirred for 12 hours. After stirring for 12 hours, the white precipitate formed during the reaction was filtered off, and the filtrate was collected. The filtrate was further filtered through a syringe filter (0.45 μm). After filtration, the crude product was purified by fractional distillation to give the title product as a colorless liquid (53.5% yield). The crude product was vacuum distilled at 0.8 Torr using short-path distillation. The forecut between 40 and 60 °C was discarded, and the main fraction boiling at 92 °C was collected. The mass of the colorless oil in the main fraction (99.3% by GC-FID) was 160 g (yield 55%). 1 H NMR(C6D6):δ 2.70(br,8H,CH2);0.33(br,2H,NH);0.13(s,9H,Si(CH3)3);0.11(s,18H,Si(CH3)3)ppm

[0053] Aspects In a first aspect, the present invention provides a compound of formula (I): Provide the compound TIFF2026028256000012.tif54170, In the formula, R 1 , R 2 and R 3 are each independently hydrogen, C1 to C 10 and n is selected from alkyl, C3-C8 cycloalkyl, aryl, and benzyl, and n is 0, 1, or 2, with the proviso that when n is 1, the compound of formula (I) is other than trimethylsilylethylenetriamine.

[0054] In a second aspect, the present invention provides the first aspect, wherein n is 0.

[0055] In a third aspect, the present invention provides the first aspect, wherein n is 1.

[0056] In a fourth aspect, the present invention provides a compound comprising R 1 , R 2 and R 3 is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and tert-butyl.

[0057] In a fifth aspect, the present invention provides a compound comprising R 1 , R 2 and R 3 Any one of the first to fourth aspects is provided, wherein each of is methyl.

[0058] In a sixth aspect, the present invention provides a compound comprising R 1 , R 2 and R 3 Any one of the first to fourth aspects is provided, wherein each of is hydrogen.

[0059] In a seventh aspect, the present invention provides a compound of formula The compound of claim 1 has TIFF2026028256000013.tif42170.

[0060] In an eighth aspect, the present invention provides a method for depositing a silicon-containing film on a microelectronic device substrate, comprising: providing the substrate with a silicon-containing compound of formula (I): with a compound of formula (I) or (II), In the formula, R 1 , R 2 and R 3 are each independently hydrogen, C1 to C 10 Alkyl, C3-C 10 Cycloalkyl, C3-C 10 Alkenyl, C3-C 10 wherein n is selected from alkynyl, aryl and heteroaryl, and n is 0, 1 or 2 in the reaction zone under deposition conditions.

[0061] In a ninth aspect, the present invention provides the method of the eighth aspect, wherein n is 0.

[0062] In a tenth aspect, the present invention provides the method of the eighth aspect, wherein n is 1.

[0063] In an eleventh aspect, the present invention provides a compound comprising: R 1 , R 2 and R 3 is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and tert-butyl.

[0064] In a twelfth aspect, the present invention provides a compound comprising: R 1 , R 2 and R 3 is methyl.

[0065] In a thirteenth aspect, the present invention provides a compound comprising: R 1 , R 2 and R 3 is hydrogen.

[0066] In a fourteenth aspect, the present invention relates to the method of any one of the eighth to eleventh aspects, wherein the compound of formula (I) is A method is provided for TIFF2026028256000015.tif43170.

[0067] In a fifteenth aspect, the present invention relates to the method of any one of the eighth to eleventh aspects, wherein the compound of formula (I) is A method is provided for TIFF2026028256000016.tif42170.

[0068] In a sixteenth aspect, the present invention provides a compound of formula (I): 1. A method for preparing a compound of TIFF2026028256000017.tif54170, comprising: In the formula, R 1 , R 2 and R 3 are each independently hydrogen, C1 to C 10 selected from alkyl, C-C cycloalkyl, aryl, and benzyl, and n is 0, 1, or 2; Formula (A): TIFF2026028256000018.tif27170 (wherein X is halo) The compound Formula (B): TIFF2026028256000019.tif32170 in the presence of a base.

[0069] In a seventeenth aspect, the present invention provides the method of the sixteenth aspect, wherein n is 0.

[0070] In an eighteenth aspect, the present invention provides the method of the sixteenth aspect, wherein n is 1.

[0071] In a nineteenth aspect, the present invention provides a compound of formula (I) having the formula: The method of the sixteenth aspect is provided, having TIFF2026028256000020.tif43170.

[0072] In a twentieth aspect, the present invention provides a compound of formula (I) having the formula: The method of the sixteenth aspect is provided having TIFF2026028256000021.tif42170.

[0073] Having thus described several exemplary embodiments of the present disclosure, those skilled in the art will readily appreciate that still other embodiments may be made and used within the scope of the appended claims. Many advantages of the present disclosure, which are encompassed by this document, have been set forth in the foregoing description. It will be understood, however, that this disclosure is in many respects merely illustrative. The scope of the present disclosure is, of course, to be defined in the language in which the appended claims are expressed.

Claims

1. Formula (I): A compound of the formula In the formula, R １ , R ２ and R ３ are each independently hydrogen, C １ ~C １０ Alkyl, C ３ ~C ８ A compound selected from cycloalkyl, aryl and benzyl, and n is 0, 1 or 2, with the proviso that when n is 1, the compound of formula (I) is other than trimethylsilylethylenetriamine.

2. The compound of claim 1 , wherein n is 0.

3. 2. The compound of claim 1, wherein n is 1.

4. R １ , R ２ and R ３ 2. The compound of claim 1, wherein each of is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and tert-butyl.

5. R １ , R ２ and R ３ 10. The compound of claim 1, wherein each of is methyl.

6. R １ , R ２ and R ３ 10. The compound of claim 1, wherein each of is hydrogen.

7. formula 2. The compound of claim 1 having the formula:

8. 1. A method for depositing a silicon-containing film on a microelectronic device substrate, comprising: with a compound of In the formula, R １ , R ２ and R ３ are each independently hydrogen, C １ ~C １０ Alkyl, C ３ ~C ８ is selected from cycloalkyl, aryl and benzyl, and n is 0, 1 or 2 in the reaction zone under deposition conditions.

9. The method of claim 8 , wherein n is 0.

10. 9. The method of claim 8, wherein n is 1.

11. R １ , R ２ and R ３ 9. The method of claim 8, wherein each of is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and tert-butyl.

12. R １ , R ２ and R ３ 9. The method of claim 8, wherein each of is methyl.

13. R １ , R ２ and R ３ 9. The method of claim 8, wherein each of is hydrogen.

14. The compound of formula (I) The method of claim 8, wherein

15. The compound of formula (I) The method of claim 8, wherein

16. Formula (I):

1. A method for preparing a compound of formula (I), comprising: In the formula, R １ , R ２ and R ３ are each independently hydrogen, C １ ~C １０ Alkyl, C ３ ~C ８ selected from cycloalkyl, aryl, and benzyl, and n is 0, 1, or 2; Formula (A): wherein X is halo. The compound Formula (B): in the presence of a base.

17. 17. The method of claim 16, wherein n is 0.

18. 17. The method of claim 16, wherein n is 1.

19. The compound of formula (I) has the formula:

17. The method of claim 16, comprising:

20. The compound of formula (I) has the formula:

17. The method of claim 16, comprising:

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