Substrate support and substrate processing apparatus

Abstract

To provide a substrate support table and a substrate processing apparatus capable of correcting in-plane distribution of substrate processing.SOLUTION: A substrate support table comprising: a support table main body; an annular protrusion formed so as to come into contact with a substrate when the substrate is placed on a substrate support surface side of the support table main body; and a plurality of movable protrusions formed on the substrate support surface side of the support table main body and capable of switching contact or non-contact with the substrate by a driving mechanism.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate support and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses an electrostatic chuck having a ceramic member having a recess and a plurality of protrusions formed on an attracting surface. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-129632 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate support table and a substrate processing apparatus capable of correcting in-plane distribution of substrate processing. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a substrate support stand is provided, comprising: a support stand main body; an annular protrusion formed to contact a substrate when the substrate is placed on the substrate support surface side of the support stand main body; and a plurality of movable protrusions formed on the substrate support surface side of the support stand main body and capable of switching between contact and non-contact with the substrate by a drive mechanism. [Effects of the Invention]

[0006] According to one aspect, it is possible to provide a substrate support table and a substrate processing apparatus capable of correcting the in-plane distribution of substrate processing. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 2] FIG. 10 is an example of an enlarged cross-sectional view of a portion of a substrate support portion. [Figure 3] FIG. 10 is an example of a partially enlarged cross-sectional view showing a contact state between a substrate support portion and a substrate. [Figure 4] FIG. 10 is an example of a top view of a substrate support. [Figure 5] FIG. 10 is another example of a top view of the substrate support portion. [Figure 6] 10 is yet another example of a top view of the substrate support portion. [Figure 7] FIG. 10 is another example of a partially enlarged cross-sectional view of the substrate support portion. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Plasma processing system] An example of the configuration of a plasma processing system will be described below: Fig. 1 is an example of a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus (substrate processing apparatus) 1.

[0010] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support (substrate support table) 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas into the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support 11 includes a main body (support base main body) 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also referred to as a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may be formed on another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. At least one bias electrode electrically connected to or coupled to a power supply 31 and / or a power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one bias electrode functions as a lower electrode. Alternatively, the conductive member of the base 1110 and the bias electrode within the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generating unit 32a, which functions as a voltage pulse generating unit (described later), is electrically connected to or coupled to the bias electrode within the ceramic member 1111a, and the first RF generating unit 31a (described later) is electrically connected to or coupled to the conductive member of the base 1110. The electrostatic chuck electrode 1111b may function as a lower electrode. The substrate support 11 therefore comprises at least one bottom electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit 14 configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a via a supply path 15 provided in the substrate support 11. The substrate support 11 further includes movable protrusions 211 and 212 that abut against the backside of the substrate W and drive mechanisms 231 and 232 that drive the movable protrusions 211 and 212 in the vertical direction. The details of the movable protrusions 211 and 212, the drive mechanisms 231 and 232, etc. will be described later with reference to FIG. 2 and the like.

[0015] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0017] The power supply system 30 includes a power supply 31 electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one radio frequency (RF) signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0018] The power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generating unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching box. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0019] The second RF generating unit 31b is electrically connected or coupled to at least one lower electrode and configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generating unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generating unit 31a is electrically connected or coupled to a lower electrode, the second RF generating unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within a range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0020] The power supply system 30 may also include a power supply 32 electrically connected or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generating unit 32a and a second voltage generating unit 32b. In one embodiment, the first voltage generating unit 32a is electrically connected or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to the at least one lower electrode. In one embodiment, the second voltage generating unit 32b is electrically connected or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to the at least one upper electrode.

[0021] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 32a and / or the second voltage generator 32b function as a voltage pulse generator configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses includes multiple cycles, each cycle including a burst of voltage pulses during a first period and a constant reference voltage during a second period. That is, the bursts of voltage pulses are repeated in the sequence of voltage pulses. The absolute value of the voltage level of the voltage pulses is greater than the absolute value of the voltage level of the reference voltage. The voltage pulses may have an arbitrary waveform, such as a rectangular, trapezoidal, triangular, or combination thereof, and the arbitrary waveform may change over time. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. The first and second voltage generating units 32a and 32b may be provided in addition to the power supply 31, or the first voltage generating unit 32a may be provided instead of the second RF generating unit 31b.

[0022] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0023] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described herein. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may be implemented, for example, by a computer 2a. The controller 2 may include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3. The functions performed by the processing unit 2a1 described in this disclosure may be implemented in circuitry or processing circuitry, including general-purpose processors, application-specific processors, integrated circuits, application-specific integrated circuits (ASICs), central processing units (CPUs), conventional circuitry, and / or combinations thereof, programmed to perform the described functions. A processor is considered to be a circuit or processing circuit that includes transistors and other circuitry. The processor may be a programmed processor that executes a program stored in the memory unit 2a2. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).In this disclosure, a circuit, unit, or means is hardware that is programmed to implement or configured to implement a described function. The hardware may be any hardware described in this disclosure or any hardware that is programmed to implement or known to implement the described function. If the hardware is a processor, which is considered a type of circuit, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or processor.

[0024] Next, the configuration of the substrate support part 11 will be further described with reference to Figures 2 and 3. Figure 2 is an example of a partially enlarged cross-sectional view of the substrate support part 11. Figure 3 is an example of a partially enlarged cross-sectional view showing the contact state between the substrate support part 11 and the substrate W. Note that in Figures 2 and 3, the flow path 1110a and the electrostatic chuck electrode 1111b are not shown.

[0025] The central region 111a (substrate support surface) of the main body 111 (electrostatic chuck 1111) has a protrusion (first protrusion, fixed protrusion) 1111c, a recessed portion 1111d, an annular protrusion 1111e, and a movable protrusion (second protrusion, first movable protrusion) 211 and a movable protrusion (third protrusion, second movable protrusion) 212 arranged in the through hole 1111f.

[0026] The annular protrusion 1111e is formed in a ring shape on the outer peripheral edge of the central region 111a and stands higher than the bottom surface of the recessed portion 1111d. The upper surface of the annular protrusion 1111e is the surface that comes into contact with the back surface of the substrate W when the substrate W is placed on the main body 111.

[0027] In the central region 111a of the substrate support portion 11 (electrostatic chuck 1111), a protrusion 1111c and a recessed portion 1111d are formed in a region on the inner circumferential side of the annular protrusion 1111e.

[0028] The recessed portion 1111d is formed by being dug deeper than the upper surface of the annular protrusion 1111e. The bottom surface of the annular protrusion 1111e is formed at a position lower than the upper surface of the annular protrusion 1111e.

[0029] The protrusion 1111c is formed to stand upright from the bottom surface of the annular protrusion 1111e. The protrusion 1111c is formed, for example, in a cylindrical shape. The upper surface of the protrusion 1111c is formed at the same height as the upper surface of the annular protrusion 1111e, and is the surface that comes into contact with the back surface of the substrate W when the substrate W is placed on the main body 111. A plurality of protrusions 1111c are provided in an area on the inner circumferential side of the annular protrusion 1111e.

[0030] A through hole 1111f is formed in the bottom surface of the recessed portion 1111d. The movable protrusions 211 and 212 are arranged in the through hole 1111f so as to be movable up and down. The movable protrusions 211 and 212 are cylindrical, shaft-shaped members and are made of the same material as the ceramic member 1111a of the electrostatic chuck 1111. This makes it possible to prevent damage to the movable protrusions 211 and 212 due to a difference in thermal expansion between the ceramic member 1111a of the electrostatic chuck 1111 and the movable protrusions 211 and 212.

[0031] The lower end of the movable protrusion 211 is fixed to a drive plate 221. A drive mechanism 231 drives (lifts and lowers) the drive plate 221 in the up and down direction. This allows one or more movable protrusions 211 fixed to the drive plate 221 to be raised and lowered by a single drive mechanism 231.

[0032] Similarly, the lower end of the movable protrusion 212 is fixed to the drive plate 222. The drive mechanism 232 drives (lifts and lowers) the drive plate 222 in the up and down direction. This allows one or more movable protrusions 212 fixed to the drive plate 222 to be raised and lowered by the single drive mechanism 232.

[0033] When the main body 111 supports the substrate W, the upper surface of the protrusion 1111c abuts against the back surface of the substrate W to support the substrate W. The upper surface of the annular protrusion 1111e abuts against the outer periphery of the back surface of the substrate W to support the substrate W. The opening of the supply path 15 (see FIG. 1) is provided in the bottom surface of the recessed portion 1111d. A heat transfer gas (e.g., He gas) is supplied from the heat transfer gas supply unit 14 (see FIG. 1) to the space formed by the recessed portion 1111d between the back surface of the substrate W and the central region 111a. The upper surface of the annular protrusion 1111e and the outer periphery of the back surface of the substrate W come into close contact with each other, forming an annular seal band that prevents leakage of the heat transfer gas.

[0034] 3(a), the movable protrusions 211, 212 are moved away from the rear surface of the substrate W. That is, the control unit 2 controls the drive mechanisms 231, 232 to control the height so that the upper surfaces of the movable protrusions 211, 212 are lower than the upper surface of the protrusion 1111c (and the upper surface of the annular protrusion 1111e). At this time, it is preferable that the upper surfaces of the movable protrusions 211, 212 are positioned higher than the bottom surface of the recessed portion 1111d.

[0035] By applying an attraction voltage to the electrostatic chuck electrode 1111b, the substrate W placed on the substrate support surface (central region 111a) of the main body 111 (electrostatic chuck 1111) is electrostatically attracted to the electrostatic chuck 1111. As a result, the substrate W and the main body 111 come into contact with each other at the protrusions 1111c and the annular protrusions 1111e, thereby achieving thermal conduction. In addition, a heat transfer gas is supplied to a gap surrounded by the annular protrusions 1111e between the back surface of the substrate W placed on the substrate support surface (central region 111a) of the main body 111 and the substrate support surface (central region 111a). As a result, thermal conduction occurs between the substrate W and the main body 111 via the heat transfer gas filled inside the recessed portion 1111d.

[0036] 3(b), the movable protrusion 211 is brought into contact with the rear surface of the substrate W, and the movable protrusion 212 is separated from the rear surface of the substrate W. That is, the control unit 2 controls the drive mechanism 231 to control the height so that the upper surface of the movable protrusion 211 is at the same height as the upper surface of the protrusion 1111c (and the upper surface of the annular protrusion 1111e), and controls the drive mechanism 232 to control the height so that the upper surface of the movable protrusion 212 is lower than the upper surface of the protrusion 1111c (and the upper surface of the annular protrusion 1111e). At this time, it is preferable that the upper surface of the movable protrusion 212 is positioned higher than the bottom surface of the recessed portion 1111d.

[0037] As a result, heat is conducted between the substrate W and the main body 111 by contacting with the protrusion 1111c, the annular protrusion 1111e, and the movable protrusion 211. Heat is also conducted between the substrate W and the main body 111 via the heat transfer gas filled inside the recess 1111d.

[0038] 3(c), the movable protrusion 212 is brought into contact with the rear surface of the substrate W, and the movable protrusion 211 is separated from the rear surface of the substrate W. That is, the control unit 2 controls the drive mechanism 232 to control the height so that the upper surface of the movable protrusion 212 is at the same height as the upper surface of the protrusion 1111c (and the upper surface of the annular protrusion 1111e), and also controls the drive mechanism 231 to control the height so that the upper surface of the movable protrusion 211 is lower than the upper surface of the protrusion 1111c (and the upper surface of the annular protrusion 1111e). At this time, it is preferable that the upper surface of the movable protrusion 211 is positioned higher than the bottom surface of the recessed portion 1111d.

[0039] As a result, heat is conducted between the substrate W and the main body 111 by contacting with the protrusion 1111c, the annular protrusion 1111e, and the movable protrusion 212. Heat is also conducted between the substrate W and the main body 111 via the heat transfer gas filled inside the recess 1111d.

[0040] As shown in FIG. 3(d), the movable protrusions 211, 212 are brought into contact with the rear surface of the substrate W. That is, the control unit 2 controls the drive mechanisms 231, 232 to control the height so that the upper surfaces of the movable protrusions 211, 212 are at the same height as the upper surface of the protrusion 1111c (and the upper surface of the annular protrusion 1111e). As a result, heat is conducted between the substrate W and the main body 111 by contact between the protrusion 1111c, the annular protrusion 1111e, and the movable protrusions 211, 212. Heat is also conducted between the substrate W and the main body 111 via the heat transfer gas filled inside the recessed portion 1111d.

[0041] In this way, the driving mechanisms 231, 232 can switch between contact and non-contact between the movable protrusions 211, 212 and the substrate W. The distribution of the protrusions (protrusions 1111c, movable protrusions 211, 212) that contact the rear surface of the substrate W can be switched. That is, by bringing the movable protrusions (211, 212) arranged in a certain region into contact with the substrate W, the thermal conductivity between the substrate W and the electrostatic chuck 1111 in that region is improved. This makes it possible to adjust the temperature distribution in the substrate W placed on the substrate support 11.

[0042] For example, in an etching process as an example of substrate processing, the etching rate depends on the temperature of the substrate W. For this reason, it is preferable that the temperature of the substrate W is uniform within the surface of the substrate W. Therefore, the protrusions 1111c are, for example, evenly arranged.

[0043] However, due to the process, the etching rate may become uneven within the surface of the substrate W (for example, between the center and edge of the substrate W). Also, depending on the configuration of the plasma processing apparatus 1 (for example, a configuration in which the gas exhaust port 10e is provided at an uneven position in the circumferential direction of the substrate support part 11), the etching rate may become uneven within the surface of the substrate W. Also, due to wear and tear of the apparatus parts, the etching rate may become uneven within the surface of the substrate W.

[0044] 4 is an example of a top view of the substrate support part 11, showing an example of the arrangement of the movable protrusions 211, 212, the protrusion 1111c, and the annular protrusion 1111e. In the example shown in Fig. 4, the movable protrusion 211 is arranged in a region on the center side of the central region 111a (substrate support surface). Furthermore, the movable protrusion 212 is arranged in a region on the edge side of the central region 111a (substrate support surface).

[0045] The in-plane temperature distribution of the substrate W can be adjusted by switching between contact and non-contact between the movable protrusions 211, 212 and the substrate W using the driving mechanisms 231, 232. That is, by bringing the movable protrusions 211, 212 into contact with the substrate W, it is possible to locally remove heat from or heat the substrate W. This makes it possible to adjust the in-plane temperature distribution of the substrate W so as to reduce non-uniformity in substrate processing that depends on the temperature of the substrate W (e.g., etching processing, etc.), thereby adjusting the in-plane uniformity of the substrate processing.

[0046] The arrangement of the movable protrusions 211 and 212 is not limited to the configuration shown in Fig. 5. Another example of the arrangement of the movable protrusions 211 and 212 will be described with reference to Figs.

[0047] 5 is an example of a top view of the substrate support part 11 showing another example of the arrangement of the movable protrusions 211, 212, the protrusion 1111c, and the annular protrusion 1111e. As shown in FIG. 5, the central region 111a of the main body part 111 has regions S11 and S12 that are partitioned in the radial direction of the substrate support part 11. Region S11 is an annular region concentric with the center of the substrate support part 11. Region S12 is an annular region concentric with the center of the substrate support part 11 and radially outward of region S11. The movable protrusion 211 is arranged in region S11. The movable protrusion 212 is arranged in region S12.

[0048] 5, the movable protrusions 211, 212 may be arranged in each of a plurality of regions S11, S12 provided in the radial direction, and each region may be configured to be able to switch between contact and non-contact between the movable protrusions 211, 212 and the substrate W. This makes it possible to adjust the temperature distribution of the substrate W in the radial direction and adjust the in-plane uniformity of substrate processing (e.g., etching rate) in the radial direction.

[0049] 6 is an example of a top view of the substrate support part 11, showing yet another example of the arrangement of the movable protrusions 211, 212, the protrusion 1111c, and the annular protrusion 1111e. As shown in Fig. 6, the central region 111a of the main body part 111 has regions S21 and S22 that are defined in the circumferential direction of the substrate support part 11. The regions S21 and S22 are fan-shaped annular regions that are defined in the circumferential direction of the substrate support part 11.

[0050] 6, the movable protrusions 211, 212 may be arranged in each of a plurality of regions S21, S22 provided in the circumferential direction, and each region may be configured to switch between contact and non-contact between the movable protrusions 211, 212 and the substrate W. This allows the temperature distribution of the substrate W in the circumferential direction to be adjusted, and the in-plane uniformity of the substrate processing (e.g., etching rate) in the circumferential direction to be adjusted.

[0051] 1 to 6, the central region 111a of the main body 111 has two regions, and the movable protrusions can be raised and lowered in each region, but this is not limited to this. All of the movable protrusions may be raised and lowered simultaneously. Furthermore, the central region 111a of the main body 111 may have three or more regions, and the movable protrusions can be raised and lowered in each region. Furthermore, the regions of the movable protrusions that rise and lower simultaneously may be regions defined in the circumferential and radial directions.

[0052] Next, another configuration of the substrate support part 11 will be further described with reference to Fig. 7. Fig. 7 is another example of a partially enlarged cross-sectional view of the substrate support part 11. Note that in Fig. 7, the flow path 1110a and the electrostatic chuck electrode 1111b are not shown.

[0053] The central region 111a (substrate support surface) of the main body 111 (electrostatic chuck 1111) has a recessed portion 1111d, an annular protrusion 1111e, and movable protrusions 211-213 arranged in the through-hole 1111f. That is, the fixed protrusion 1111c (see FIG. 2) may not be provided inside the annular protrusion 1111e, and all of the movable protrusions 211-213 may be movable (raised and lowered) in the vertical direction.

[0054] The movable protrusions 211-213 may be connected to a drive mechanism so that each one can be independently driven (raised and lowered) in the vertical direction. Alternatively, one or more movable protrusions 211-213 fixed to a drive plate may be raised and lowered by a single drive mechanism.

[0055] According to this configuration, it is possible to adjust the in-plane distribution of heat extraction or heating of the substrate W by switching the combination of the movable protrusions 211-213 that come into contact with the rear surface of the substrate W. As a result, in substrate processing that depends on the temperature of the substrate W (e.g., etching processing, etc.), it is possible to adjust the in-plane temperature distribution of the substrate W so as to reduce non-uniformity in the substrate processing, thereby adjusting the in-plane uniformity of the substrate processing.

[0056] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) A support base main body, an annular protrusion formed on the substrate support surface side of the support base body so as to come into contact with the substrate when the substrate is placed thereon; a plurality of movable protrusions formed on the substrate support surface side of the support base body, the movable protrusions being switchable between contact with the substrate and non-contact with the substrate by a drive mechanism; Substrate support stand. (Appendix 2) The plurality of movable protrusions include a first movable protrusion disposed in a first region of the substrate support surface; a second movable protrusion disposed in a second region of the substrate support surface that is different from the first region; The first movable protrusion and the second movable protrusion are each configured to be switchable between contact and non-contact with the substrate. 2. The substrate support of claim 1. (Appendix 3) When the movable protrusion contacts the substrate, the upper surface of the movable protrusion is positioned at the same height as the upper surface of the annular protrusion. 10. The substrate support of claim 1 or 2. (Appendix 4) When the movable protrusion is not in contact with the substrate, an upper surface of the movable protrusion is lower than an upper surface of the annular protrusion. 4. A substrate support according to any one of claims 1 to 3. (Appendix 5) a recessed portion on the substrate support surface side of the support base body, the recessed portion being located inward of the annular protrusion; When the movable protrusion is not in contact with the substrate, the upper surface of the movable protrusion is higher than the bottom surface of the recessed portion. 5. The substrate support of claim 4. (Appendix 6) a recessed portion on the substrate support surface side of the support base body, the recessed portion being located inward of the annular protrusion; The support base body further includes a plurality of protrusions formed upright from the bottom surface of the recessed portion and configured to come into contact with the substrate when the substrate is placed on the substrate support surface side of the support base body. 6. A substrate support table according to any one of claims 1 to 5. (Appendix 7) The first region and the second region are defined in the radial direction of the support base body. 3. The substrate support of claim 2. (Appendix 8) The first region and the second region are defined in the circumferential direction of the support base body. 3. The substrate support of claim 2. (Appendix 9) a heat transfer gas supply unit that supplies a heat transfer gas to a gap that is between a rear surface of a substrate placed on the substrate support surface and the substrate support surface and that is surrounded by the annular protrusion. 9. A substrate support according to any one of claims 1 to 8. (Appendix 10) further comprising an electrostatic chuck that electrostatically attracts the substrate placed on the substrate support surface; 10. A substrate support according to any one of claims 1 to 9. (Appendix 11) A substrate support table according to any one of Supplementary Note 1 to Supplementary Note 10, Substrate processing equipment.

[0057] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form. [Explanation of symbols]

[0058] W substrate 1. Plasma processing equipment 2. Control Unit 10 Plasma Processing Chamber 11 Substrate support unit (substrate support stand) 111 Main body (support base main body) 111a Central area 111b Annular region 1110 Foundation 1110a flow channel 1111 Electrostatic chuck 1111a Ceramic components 1111b Electrostatic electrode 1111c Projection (first projection, fixed projection) 1111d digging section 1111e Annular protrusion 1111f Through hole 211 Movable protrusion (2nd protrusion, 1st movable protrusion) 212 Movable protrusion (3rd protrusion, 2nd movable protrusion) 221,222 Drive plate 231, 232 Drive mechanism

Claims

1. A support base main body, an annular protrusion formed on the substrate support surface side of the support base body so as to come into contact with the substrate when the substrate is placed thereon; a plurality of movable protrusions formed on the substrate support surface side of the support base body, the movable protrusions being switchable between contact with the substrate and non-contact with the substrate by a drive mechanism; Substrate support stand.

2. The plurality of movable protrusions include a first movable protrusion disposed in a first region of the substrate support surface; a second movable protrusion disposed in a second region of the substrate support surface that is different from the first region; The first movable protrusion and the second movable protrusion are each configured to be switchable between contact and non-contact with the substrate. The substrate support according to claim 1 .

3. When the movable protrusion contacts the substrate, the upper surface of the movable protrusion is positioned at the same height as the upper surface of the annular protrusion. The substrate support according to claim 1 .

4. When the movable protrusion is not in contact with the substrate, an upper surface of the movable protrusion is lower than an upper surface of the annular protrusion. The substrate support according to claim 1 .

5. a recessed portion on the substrate support surface side of the support base body, the recessed portion being located inward of the annular protrusion; When the movable protrusion is not in contact with the substrate, the upper surface of the movable protrusion is higher than the bottom surface of the recessed portion. The substrate support table according to claim 4 .

6. a recessed portion on the substrate support surface side of the support base body, the recessed portion being located inward of the annular protrusion; The support base body further includes a plurality of protrusions formed upright from the bottom surface of the recessed portion and configured to come into contact with the substrate when the substrate is placed on the substrate support surface side of the support base body. The substrate support according to claim 1 .

7. The first region and the second region are defined in a radial direction of the support base body. The substrate support table according to claim 2 .

8. The first region and the second region are defined in the circumferential direction of the support base body. The substrate support table according to claim 2 .

9. a heat transfer gas supply unit that supplies a heat transfer gas to a gap that is between a rear surface of a substrate placed on the substrate support surface and the substrate support surface and that is surrounded by the annular protrusion. The substrate support according to claim 1 .

10. further comprising an electrostatic chuck that electrostatically attracts the substrate placed on the substrate support surface; The substrate support according to claim 1 .

11. A substrate support according to claim 1, Substrate processing equipment.

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