Showerhead pumping geometry for precursor confinement

Abstract

To provide a gas distribution plate for narrowing a transition deposition zone, a batch processing chamber having an improved pumping geometry, and a substrate processing method.SOLUTION: A gas distribution plate (320) comprising a vacuum channel (440) having an inlet opening (446) in a front surface (321) and an outlet opening (448) in a back surface (323), the vacuum channel comprising a first leg (441) extending from the inlet opening in the front surface at a first angle to the front surface for a first length and a second leg (442) extending from the first leg at a second angle to the outlet opening in the back surface for a second length, a plurality of processing regions defined by one or more vacuum channels around an outer peripheral edge (328). The first processing region has a first vacuum channel having a first outer diameter, the second processing region 312 has a second vacuum channel having a second outer diameter, and the first outer diameter is less than the second outer diameter.SELECTED DRAWING: Figure 10

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to an apparatus and method for narrowing a transition deposition zone. In particular, some embodiments of the present disclosure relate to a batch processing chamber having an improved pumping geometry. [Background technology]

[0002] In atomic layer deposition (ALD) chambers, deposition can occur on parts of the chamber other than the wafer being processed. In this case, the chamber is typically constructed so that the parts on which deposition occurs can be cleaned in situ or removed for ex-situ cleaning. The set of periodically replaced parts can be referred to as a process kit.

[0003] In some cases, deposition on process kits can accumulate to the point where the deposition flakes off and causes defect issues for processed wafers. This unwanted deposition can also result in process variations, such as changes in film thickness, film uniformity, or film properties. Some deposited films do not have good options for in-situ cleaning, so process kits accumulate deposition until they must be removed and potentially replaced. This can result in machine downtime and increased operating costs.

[0004] In some batch processing chambers where substrates are moved between different processing stations (also called processing zones) on the same electrostatic chuck, it is possible to prevent deposition on most chamber parts due to the separation of reactants between the different processing stations. However, the electrostatic chuck that supports the wafer moves with the wafer between the different stations. Portions of the electrostatic chuck are exposed to process conditions within the processing stations and can also accumulate undesirable film deposits.

[0005] In these cases, the backside purge flow in the chamber can limit deposition at the edge of the electrostatic chuck so that it does not extend beyond the pumping channels. The wafer / electrostatic chuck edge is a transition region where deposition decreases from comparable deposition on the wafer to no deposition.

[0006] Therefore, there is a need for an apparatus and method that reduces deposition on processing chamber surfaces. Summary of the Invention

[0007] One or more embodiments of the present disclosure are directed to a gas distribution plate including a body having a front surface and a back surface defining a thickness of the body, and an outer peripheral edge. A vacuum channel has an inlet opening on the front surface and an outlet opening on the back surface. The vacuum channel includes a first leg extending a first length from the inlet opening on the front surface at a first angle relative to the front surface, and a second leg extending a second length from the first leg to the outlet opening on the back surface at a second angle relative to the front surface.

[0008] A further embodiment of the present disclosure is directed to a processing chamber including a substrate support, a first processing region, and a second processing region. The substrate support has a top surface configured to support a wafer and move the wafer between the processing regions during processing. The substrate support includes an edge ring with an inwardly protruding internal protrusion, the internal protrusion sized to provide a gap between the top surface of the substrate support and the top surface of the inwardly protruding internal protrusion. The first processing region includes a first gas distribution plate having a first front surface opposite the top surface of the substrate support. The first gas distribution plate has a first vacuum channel on the first front surface, the first vacuum channel having a first outer diameter. The second processing region includes a second gas distribution plate having a second front surface opposite the top surface of the substrate support. The second gas distribution plate has a second vacuum channel on the second front surface. The second vacuum channel has an inlet opening on the front surface and an outlet opening on a second back surface of the second gas distribution plate. The second vacuum channel has a first leg extending a first length from an inlet opening in the second front surface at a first angle relative to the second front surface, and a second leg extending a second length from the first leg to an outlet opening in the second back surface at a second angle relative to the second front surface. The inlet opening of the second vacuum channel has a second inner diameter greater than the first outer diameter.

[0009] In a manner in which the above-described features of the present disclosure can be understood in detail, a more detailed description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings merely illustrate exemplary embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, since the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional isometric view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 2]1 is a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 3] 1 is a partial cross-sectional schematic view of a processing region according to one or more embodiments of the present disclosure. [Figure 3A] FIG. 4 is an enlarged view of region 3A of FIG. [Figure 3B] 1 is a cross-sectional schematic view of a gas distribution plate according to one or more embodiments of the present disclosure. [Figure 4] 1 is a partial cross-sectional schematic view of a processing region according to one or more embodiments of the present disclosure. [Figure 4A] FIG. 4 is an enlarged view of region 4A of FIG. [Figure 4B] 1 is a cross-sectional schematic view of a gas distribution plate according to one or more embodiments of the present disclosure. [Figure 5] FIG. 1 is a schematic diagram of a deposition transition region according to one or more embodiments of the present disclosure. [Figure 6] FIG. 1 is a schematic diagram of a deposition transition region according to one or more embodiments of the present disclosure. [Figure 7] 1 is a schematic cross-sectional view of a portion of a gas distribution plate according to one or more embodiments of the present disclosure. [Figure 8] 1 is a partial schematic cross-sectional view of a gas distribution plate according to one or more embodiments of the present disclosure. [Figure 9] FIG. 1 is a cross-sectional schematic view of a gas distribution plate having a replaceable purge ring according to one or more embodiments of the present disclosure. [Figure 10] 1 is a partial schematic cross-sectional view of a gas distribution plate according to one or more embodiments of the present disclosure. [Figure 11A] 1 is a partial schematic cross-sectional view of a vacuum channel according to one or more embodiments of the present disclosure. [Figure 11B] 1 is a partial schematic cross-sectional view of a vacuum channel according to one or more embodiments of the present disclosure. [Figure 11C] 1 is a partial schematic cross-sectional view of a vacuum channel according to one or more embodiments of the present disclosure. [Figure 11D]1 is a partial schematic cross-sectional view of a vacuum channel according to one or more embodiments of the present disclosure. [Figure 11E] 1 is a partial schematic cross-sectional view of a vacuum channel according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011] Before describing certain exemplary embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of structure or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0012] As used herein and in the appended claims, the term "substrate" means a surface or portion of a surface upon which a process acts. Those skilled in the art will also understand that reference to a substrate can also refer to only a portion of a substrate, unless the context clearly indicates otherwise. Furthermore, reference to depositing on a substrate can refer to both a bare substrate and a substrate upon which one or more films or features have been deposited or formed.

[0013] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which a film treatment is performed during a manufacturing process. For example, substrate surfaces on which treatment can be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. Substrates can be subjected to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, electron beam cure, and / or bake the substrate surface. In addition to performing film treatments directly on the surface of the substrate itself, the present disclosure also contemplates that any of the disclosed film treatment steps can also be performed on underlying layers formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include such underlying layers as the context indicates. Thus, for example, when a film / layer or partial film / layer is deposited on a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0014] As used herein and in the appended claims, the terms "precursor," "reactant," "reactive gas," etc. are used interchangeably to mean any gas species capable of reacting with a substrate surface or a film formed on a substrate surface.

[0015] Most deposition chambers do not have separate chemistries, but instead pump various chemicals through the same pump port location. In some modern batch processing chambers, precursors are separated between different processing stations. Pumping hardware can be used to pump gases through the same location relative to the wafer. Deposition buildup problems still exist with this configuration. Therefore, one or more embodiments of the present disclosure alternate pumping locations between spatially separated processing stations. Some embodiments use different sensitivities to each reactive gas to minimize support surface deposition.

[0016] One or more embodiments of the present disclosure are directed to methods and apparatus for narrowing the width of the transition region between uniform deposition on a wafer and non-deposition on an adjacent support surface. Some embodiments advantageously provide apparatus and methods for minimizing or eliminating off-wafer deposition by staggering pumping locations relative to the wafer.

[0017] Some embodiments of the present disclosure advantageously provide improved system architectures for minimizing deposition caused by thermal processes by spatially isolating highly reactive precursors. Some embodiments strategically target purge gas around the wafer with localized pumping near the wafer edge. One or more embodiments of the present disclosure advantageously provide apparatus and methods for improving precursor confinement while maintaining low film thickness non-uniformity.

[0018] Metal oxide ALD films cannot be cleaned from the deposition hardware and accumulate on the chamber walls during deposition because precursor and oxidizer gases mix in the same process environment. Replacing components such as electrostatic chucks and showerheads can be costly and time-consuming. Therefore, some embodiments of the present disclosure provide a system with localized pumping near the wafer edge and improved pumping inlet geometry relative to the wafer. By balancing the impact on the wafer film thickness, deposition on chamber parts outside the wafer boundary is reduced. In some embodiments, to maintain a clean electrostatic chuck (ESC) area around the wafer, a replaceable edge ring is attached to the ESC to overhang within the wafer edge by up to 3 mm, and a backside edge purge prevents diffusion of precursor gases to the ESC surface. In some embodiments, the purge gas provides an aerodynamic boundary across the edge ring, reducing film deposition on the ring.

[0019] Although the following description is primarily presented with respect to a batch processing chamber such as that shown in Figure 1, those skilled in the art will recognize that the scope of the present disclosure is not limited to batch chambers. In some embodiments, the gas distribution plate and / or pumping components are configured to provide staggered pumping for different locations relative to the wafer.

[0020] 1 and 2 illustrate a batch processing chamber 100 in accordance with one or more embodiments of the present disclosure. FIG. 1 illustrates the processing chamber 100 shown in a cross-sectional isometric view in accordance with one or more embodiments of the present disclosure. FIG. 2 illustrates the processing chamber 100 in cross-section in accordance with one or more embodiments of the present disclosure. Accordingly, some embodiments of the present disclosure are directed to a processing chamber 100 incorporating a substrate support 200 and a top plate 300.

[0021] The processing chamber 100 includes a housing 102 having walls 104 and a bottom 106. The housing 102, together with a top plate 300, defines an interior volume 109, also referred to as the processing volume.

[0022] The illustrated processing station 110 includes three main components: a top plate 300 (also referred to as a lid), a pump / purge insert 330, and a gas distribution plate 112. The processing chamber 100 further includes multiple processing stations 110. The processing stations 110 are disposed within the interior volume 109 of the housing 102 and positioned in a circular configuration around the axis of rotation 211 of the substrate support 200. Each processing station 110 includes a gas distribution plate 112 (also referred to as a gas injector) having a front surface 114. In some embodiments, the front surfaces 114 of each of the gas distribution plates 112 are substantially coplanar. The processing station 110 is defined as an area in which processing can occur. For example, in some embodiments, the processing station 110 is defined as an area bounded by the support surface 231 of the substrate support 200 and the front surface 114 of the gas distribution plate 112, as described below. In the illustrated embodiment, the heaters 230 act as substrate support surfaces and form part of the substrate support 200. Each of the heaters 230 includes a support surface 231 and a bottom surface 232, defining a thickness of the heater 230. In some embodiments, the support surface 231 further includes a provision for at least three lift pins extending therethrough. A support plate 245 surrounds the heaters 230 in the illustrated embodiment. The support plate 245 is connected to the substrate support 200 and has a plurality of openings through which the heaters 230 extend. In some embodiments, the support plate 245 provides a flow path for a backside purge gas.

[0023] The processing station 110 can be configured to perform any suitable process and provide any suitable process conditions. The type of gas distribution plate 112 used depends, for example, on the type of process being performed and the type of showerhead or gas injector. For example, a processing station 110 configured to operate as an atomic layer deposition (ALD) system can have a showerhead or vortex-type gas injector. On the other hand, a processing station 110 configured to operate as a plasma station can have one or more electrodes and / or a ground plate configuration for generating plasma while allowing plasma gas flow toward the wafer. The embodiment shown in FIG. 2 has a different type of processing station 110 on the left side of the figure (processing station 110a) than on the right side of the figure (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel-plate CCP, UV exposure, laser processing, pumping chambers, annealing stations, and metrology stations. Although the embodiment shown in Figures 1 and 2 shows a four-fold symmetrical configuration of processing stations, the scope of the present disclosure is not limited to a four-station processing chamber.

[0024] In some embodiments, the rate of deposition thickness decreases in this transition region depending on the deposition chemistry used and the sensitivity of the deposition process to precursor concentrations. In some embodiments, a narrower transition region allows for uniform deposition over a larger area of ​​the wafer being processed, while reducing deposition on surfaces other than the wafer.

[0025] With reference to FIGS. 3, 3A, 3B, 4, 4A, and 4B, one or more embodiments of the present disclosure are directed to a processing chamber including multiple processing regions. FIG. 3 illustrates a portion of a first processing region 311. For example, the first processing region 311 may be part of the left processing station 110a shown in FIG. 2. FIG. 3A illustrates an enlarged view of region 3A in FIG. 3. FIG. 3B illustrates a view of the gas distribution plate 320 in FIG. 3A. FIG. 4 illustrates a portion of a second processing region 312, and FIG. 4A illustrates an enlarged view of region 4A in FIG. 4. FIG. 4B illustrates a view of the gas distribution plate 320 in FIG. 4A. For example, the second processing region 312 may be part of the right processing station 110b shown in FIG. 2. The use of terms such as "first," "second," etc., is for descriptive purposes only to refer to different components and should not be construed as any particular order of operation or priority.

[0026] Each individual processing region 311, 312 has a height H defined by the front surface 321 of the gas distribution plate 320 and the top surface 331 of the substrate support 333. The height H of the processing regions 311, 312 is reduced when a wafer 60 is positioned on the top surface 331 of the substrate support 333, as shown. Each of the processing regions 311, 312 is bounded around its outer peripheral edge by one or more vacuum channels 341 a, 341 b.

[0027] The gas distribution plate 320 shown in Figures 3, 3B, 4, and 4B includes a plenum 322 region into which reactive gases flow. The reactive gases flow from the plenum 322 to the processing regions 311, 312 through apertures 324. The figures show three apertures 324 for illustrative purposes only and should not be construed as limiting the scope of the present disclosure. Those skilled in the art will likely be familiar with the placement of apertures 324 and the configuration of apertures 324 in a showerhead gas distribution plate. In some embodiments, the gas distribution plate 320 does not have a plenum 322 region, and the gases flow directly into the processing regions without passing through apertures.

[0028] The first processing region 311 has a first vacuum channel 341a having a first inner diameter ID1, a first outer diameter OD1, and a first vacuum channel width W1. Although the first vacuum channel 341a is described as being part of the first processing region 311, those skilled in the art will understand that the first vacuum channel 341a is part of the gas distribution plate 320 or other component that defines the first processing region 311. In other words, the gas distribution plate 320 that defines the first processing region 311 has a first vacuum channel 341a having a first inner diameter ID1, a first outer diameter OD1, and a first vacuum channel width W1, as shown in FIG.

[0029] The second processing region 312 has a second vacuum channel 341b having a second inner diameter ID2, a second outer diameter OD2, and a second vacuum channel width W2. Although the second vacuum channel 341b is described as being part of the second processing region 312, those skilled in the art will understand that the second vacuum channel 341b is part of the gas distribution plate 320 or other component that defines the second processing region 312. In other words, the gas distribution plate 320 that defines the second processing region 312 has the second vacuum channel 341b having a second inner diameter OD1, a second outer diameter OD2, and a second vacuum channel width W2, as shown in FIG.

[0030] 7 illustrates a cross-sectional view of a vacuum channel according to one or more embodiments of the present disclosure. In some embodiments, the first vacuum channel 341 a and / or the second vacuum channel 341 b are trenches 343 formed in the bottom surface of the showerhead. The trenches 343 are connected to a vacuum plenum 345 via a plurality of conduits 344. Each of the conduits has an opening 344 a in the plenum 345 and an opening 344 b in the trench 343, providing fluid communication between the trenches 343 and the plenum 345.

[0031] In some embodiments, the first outer diameter OD1 is smaller than the second outer diameter OD2. In other words, in some embodiments, the second outer diameter OD2 is larger than the first outer diameter OD1. In some embodiments, the first outer diameter OD1 is larger than the second outer diameter OD2. In other words, in some embodiments, the second outer diameter OD2 is smaller than the first outer diameter OD1.

[0032] In some embodiments of binary reactions—reactions using a precursor dose and a reactant dose—there are two distinct process regions: a first processing region 311 and a second processing region 312. Each of the first processing region 311 and the second processing region 312 has a vacuum channel 341 a, 341 b. The outer diameters OD1, OD2 of the vacuum channels 341 a, 341 b vary depending, for example, on the reactivity of the reactive species delivered in the particular processing region. For example, in some embodiments of binary reactions, one of the first or second reactive gases has a slower reaction rate. The reactant with the slower reaction rate is referred to as the rate-limiting reactant because the deposition process cannot proceed at a rate faster than the rate-limiting reactant can react with the substrate surface. In some embodiments, a vacuum channel with a larger outer diameter is associated with the reactant that is the rate-limiting reactant.

[0033] In some embodiments, the outer diameter of the vacuum channel varies to vary the size of the transition zone between full deposition on the wafer and no deposition on the wafer's edge exclusion zone. The deposition transition zone is formed by an atomic layer deposition (ALD) reaction between a first reactant and a second reactant. In some embodiments, the first processing region 311 and the second processing region 312 are concentric.

[0034] The outer portion of the wafer is the area that is a contact point during processing and is usually omitted from the final device. This area of ​​the wafer is called the edge exclusion zone. Typically, the edge exclusion zone has a width of about 2 mm. For example, a 300 mm diameter wafer with a 2 mm edge exclusion zone provides a usable area of ​​296 mm diameter (300 mm minus 2 mm on each side).

[0035] 5 shows a schematic representation of the outer peripheral edge 62 of a wafer 60 with a portion of a substrate support 333. The wafer 60 shown has a thick line 64 indicating the beginning of the edge exclusion zone 355 and an even thicker line indicating the outer peripheral edge 62 of the wafer 60. In some embodiments, the substrate support 333 has a region where full deposition continues to the outside of the diameter of the wafer. Outside the region 350 of full deposition is a transition zone 360. The transition zone 360 ​​has a gradient of deposition thickness where full deposition in region 350 decreases to no deposition in region 365 outside the transition zone 355.

[0036] In a typical ALD process, the transition zone between full deposition and no deposition has a width of approximately 6 mm. In the embodiment shown, the transition zone 360 ​​begins within the edge exclusion zone 355 and extends beyond the outer peripheral edge 62 of the wafer 60, resulting in deposition on portions of the substrate support 333. If the transition zone begins at the beginning of the edge exclusion zone, at least 4 mm of deposition will be present on the substrate support.

[0037] Accordingly, some embodiments of the present disclosure advantageously provide apparatus and methods for narrowing the width of the transition zone, and thereby narrowing the width of the deposition on the substrate support, hi some embodiments, the width of the transition zone is reduced and positioned such that the entire transition zone is within the edge exclusion zone of the wafer.

[0038] Figure 6 illustrates another embodiment using an apparatus according to one or more embodiments of the present disclosure, using a view similar to Figure 5. In the embodiment shown in Figure 6, a transition zone 360 ​​extending from the region of full deposition 350 at line 361 to no deposition at dotted line 362 has a width that is narrower than the width of the edge exclusion zone 355. In the embodiment shown, the transition zone 360 ​​is entirely within the edge exclusion zone 355, and therefore the region of full deposition 350 covers the wafer 60 within the edge exclusion zone 355, and no deposition of the substrate surface 333 occurs.

[0039] In some embodiments, the deposition transition zone 360 ​​is smaller than a deposition transition zone formed on a substrate in a similar processing chamber having the same first outer diameter and second outer diameter. In some embodiments, the deposition transition zone 360 ​​is smaller than a deposition transition zone formed in a processing chamber having one vacuum channel, for example, in a single-wafer processing chamber where a time-domain ALD process is performed.

[0040] The inventors have determined that the difference between the first outer diameter OD1 and the second outer diameter OD2 is the width W of the transition zone 355. Z In some embodiments, the difference between the first outer diameter OD1 and the second outer diameter OD2 is 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm or more. In some embodiments, the difference between the first outer diameter OD1 and the second outer diameter OD2 is in the range of 1 mm to 8 mm, or in the range of 2 mm to 5 mm.

[0041] In some embodiments, the difference between the first outer diameter OD1 and the second inner diameter ID2 is the width W of the transition zone 355. ZIn some embodiments, the difference between the first outer diameter OD1 and the second inner diameter ID2 is 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm or more. In some embodiments, the difference between the first outer diameter OD1 and the second inner diameter OD2 is in the range of 1 mm to 8 mm, or in the range of 2 mm to 5 mm. In some embodiments, the difference between the first outer diameter OD1 and the second inner diameter ID2 is a negative number that is 5 mm, 4 mm, 3 mm, 2 mm, or 1 mm or less. As used in this method, a negative value means that the second inner diameter ID2 is smaller than the first outer diameter OD1. In some embodiments, the second inner diameter ID2 is within ±0.5 mm or ±0.25 mm of the first outer diameter OD1.

[0042] In some embodiments, the first inner diameter ID1 is within ±5 mm, ±10 mm, ±15 mm, or ±20 mm of the outer diameter of the wafer being processed. For example, in some embodiments where a 300 mm wafer is being processed, the first inner diameter ID1 is in the range of 280 mm to 320 mm, or in the range of 285 mm to 315 mm, or in the range of 290 mm to 310 mm, or in the range of 295 mm to 305 mm.

[0043] In some embodiments, the first outer diameter OD1 is smaller than the diameter of a wafer supported on the plate support. In some embodiments, the first outer diameter OD1 is 5 mm, 4 mm, 3 mm, 2 mm, or 1 mm or more smaller than the diameter of a wafer being processed. In other words, in some embodiments, the first outer diameter OD1 is 5 mm, 4 mm, 3 mm, 2 mm, or 1 mm or more smaller than the diameter of a substrate being processed.

[0044] In some embodiments, the first outer diameter OD1 is within ±5 mm, ±10 mm, ±15 mm, or ±19 mm of the outer diameter of the wafer being processed. The first outer diameter OD1 is greater than the first inner diameter ID1. For example, in some embodiments where a 300 mm wafer is being processed, the first outer diameter OD1 is in the range of 281 mm to 319 mm, or in the range of 285 mm to 315 mm, or in the range of 290 mm to 310 mm, or in the range of 295 mm to 305 mm.

[0045] In some embodiments, the second inner diameter ID2 is within −5 mm, 0 mm, 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, or 40 mm of the outer diameter of the wafer being processed. As used in this method, a negative number means that the referenced diameter is smaller than the wafer being processed. For example, in some embodiments in which a 300 mm wafer is being processed, the second inner diameter ID2 is in the range of 295 mm to 340 mm, or in the range of 300 mm to 335 mm, or in the range of 305 mm to 330 mm, or in the range of 310 mm to 325 mm, or in the range of 315 mm to 320 mm.

[0046] In some embodiments, the second outer diameter OD2 is within −4 mm, 0 mm, 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, or 41 mm of the outer diameter of the wafer being processed. The second outer diameter OD2 is greater than the second inner diameter ID2. For example, in some embodiments where a 300 mm wafer is being processed, the second outer diameter ID2 is in the range of 296 mm to 341 mm, or in the range of 300 mm to 340 mm, or in the range of 305 mm to 335 mm, or in the range of 310 mm to 330 mm, or in the range of 315 mm to 325 mm.

[0047] In some embodiments, the first vacuum channel width W1 is 10 mm, 9 mm, 8 mm, 7 mm, 6 mm, 5 mm, 4 mm, 3 mm, or 2 mm or less. In some embodiments, the second vacuum channel width W2 is 10 mm, 9 mm, 8 mm, 7 mm, 6 mm, 5 mm, 4 mm, 3 mm, or 2 mm or less. In some embodiments, the openings of the first vacuum channel (first vacuum channel width W1) and the second vacuum channel (second vacuum channel width W2) are 10 mm, 9 mm, 8 mm, 7 mm, 6 mm, 5 mm, 4 mm, 3 mm, or 2 mm or less, respectively.

[0048] 3 and 4, some embodiments further include a first purge region 380a and / or a second purge region 380b outside the first processing region 311 and / or the second processing region 312, respectively. In some embodiments, the first purge region 380a and / or the second purge region 380b include purge gas ports 382a, 382b that provide a flow of purge gas to prevent diffusion of process gas from the processing regions 311, 312. In some embodiments, the purge region is outside the processing regions 311, 312 between the processing stations 110 (shown in FIG. 1). In some embodiments, the first processing region 311 and the second processing region 312 are spatially separated by the purge region.

[0049] Some embodiments of the present disclosure are directed to a method of processing a substrate. The substrate is exposed to a first reactant in a first processing region 311 and a second reactant in a second processing region 312. The first processing region 311 is bounded about an outer periphery by a first vacuum channel 341a having a first inner diameter ID1 and a first outer diameter OD1 defining a first width W1. The second processing region 312 is bounded about an outer periphery by a second vacuum channel 341b having a second inner diameter ID2 and a second outer diameter OD2 defining a second width W2. One of the first outer diameter OD1 of the first vacuum channel 341a or the second outer diameter OD2 of the second vacuum channel 341b is larger than the other of the first vacuum channel 341a or the second vacuum channel 341b.

[0050] In some embodiments, the method further includes moving the substrate from the first processing region 311 to the second processing region 312. In some embodiments, the substrate support 200 (e.g., the substrate support 200 in FIG. 1 ) can be rotated such that the substrate support moves a fixed distance about the rotation axis 211, thereby moving the wafer from a first processing station having the first processing region 311 to a second processing station having the second processing region 312.

[0051] Some embodiments of the present disclosure are directed to a showerhead or gas distribution plate 320 having dual exhaust channels. FIG. 8 illustrates an embodiment of a gas distribution plate 320 in which a first processing region 311 and a second processing region 312 overlap. The processing regions are defined by a first vacuum channel 341 a and a second vacuum channel 341 b. Either the first vacuum channel 341 a or the second vacuum channel 341 b is used with either the first processing region 311 or the second processing region 312. For example, for a first reaction, a first process gas flows into the first processing region 311, across the wafer 60, and out the first vacuum channel 341 a. For a second reaction, a second process gas flows into the second processing region 312, across the wafer 60, and out the second vacuum channel 341 b. While the first process gas is flowing, the second vacuum channel 341b may be under vacuum at the same pressure as the first processing region 311, or may have a purge gas flow to prevent reactive gases from entering the second vacuum channel 341b. While the second process gas is flowing, the first vacuum channel 341a may be under vacuum at the same pressure as the second processing region 312, or may have a purge gas flow to prevent reactive gases from entering the first vacuum channel 341a.

[0052] In some embodiments, the gas distribution plate 320 includes a dual plenum exhaust. As shown in FIG. 8 , in some embodiments, the first vacuum channel 341 a is connected to a first plenum 345 a, and the second vacuum channel 341 b is connected to a second plenum 345 b. At any given time during processing, the first plenum 345 a and the second plenum 345 b may be under vacuum or may have gas flowing toward the processing region. In some embodiments, a purge gas channel 382 is present on the vacuum channel opposite the processing region to provide a purge gas flow to prevent reactive gases from migrating to the rest of the processing chamber.

[0053] In some embodiments, the gas distribution plate 320 includes a separable showerhead 327 and pump rings 401, 402. In some embodiments, a purge ring 381 surrounds the pump rings 401, 402 when the gas distribution plate 320 is assembled. The separable gas distribution plate 320 allows for easy changing of the outer diameter of the vacuum channels. For example, a first pump ring 401 having first vacuum channels 341a with a first outer diameter OD1 can be replaced with a second pump ring 402 having second vacuum channels 341b with a second outer diameter OD2.

[0054] In some embodiments, there are multiple processing stations, as shown in Figure 1. In some embodiments, the substrate support is configured to support multiple substrates on multiple heaters, electrostatic chucks, or more generally on a support surface. The pump ring of the gas distribution plate 320 can be easily modified to adjust the deposition transition zone by replacing the pump ring with a different outer diameter.

[0055] 10 , 11A, and 11B, one or more embodiments of the present disclosure are directed to a gas distribution plate 320 having multi-legged vacuum channels 440. The gas distribution plate 320 has a body having a front surface 321 and a back surface 323. As shown in FIG. 9, a plurality of apertures extend through the body of the gas distribution plate 320 to allow passage of gas from a plenum 322 to the processing region 312. In the embodiment shown in FIG. 3, the plenum 322 is integrated into the gas distribution plate 320. In the embodiment shown in FIG. 10, the plenum 322 is formed between the back surface 323 of the gas distribution plate 320 and a backing plate 325. The body of the gas distribution plate 320 is bounded by an outer peripheral edge 328.

[0056] The vacuum channel 440 extends from the front surface 321 to the back surface 323 of the gas distribution plate 320. The vacuum channel has an inlet opening 446 in the front surface 321 and an outlet opening 448 in the back surface 323. The vacuum channel 440 has a first leg 441 extending a first length L1 from the inlet opening 446 in the front surface 321 at a first angle Θ1 relative to the front surface 321, and a second leg 442 extending a second length L2 from the first leg 441 to the outlet opening 448 in the back surface 323 at a second angle Θ2 relative to the front surface 321.

[0057] 11A , the first leg 441 has a length L1 measured from the front surface 321 of the gas distribution plate 320. Because the widths of the first leg 441 and the second leg 442 may vary, the lengths of the first leg 441 and the second leg 442 are measured relative to the intersection 453 of a first line 451 and a second line 452. The first line 451 is an imaginary line measured at the center of the first leg 441 relative to the inner diameter ID and outer diameter OD of the first leg 441. The second line 452 is an imaginary line measured at the center of the second leg 442 relative to the surface of the second leg 442 at the center of the gas distribution plate and the surface of the second leg 442 far from the center of the gas distribution plate.

[0058] In some embodiments, the first leg 441 has a first length L1 in the range of 1 mm to 7.5 mm, hi some embodiments, the first leg 441 has a first length L1 in the range of 2 mm to 6 mm, or in the range of 3 mm to 5 mm, or about 4 mm.

[0059] In some embodiments, the first leg 441 extends from the front surface 321 at a first angle Θ1. An angle less than 90° means that the end of the first leg 441 closer to the back surface 323 is farther from the center of the gas distribution plate 320, and therefore the first leg 441 is angled toward the back surface 323 and the outer peripheral edge 328. The first angle Θ1 in some embodiments is in the range of 80° to 100° relative to the front surface 321, or in the range of 85° to 95° relative to the front surface. In some embodiments, the first angle is less than or equal to 92°, 91°, 90°, 85°, 80°, 75°, or 70° relative to the front surface 321, and is greater than or equal to 65°, 70°, 75°, 80°, or 85°.

[0060] The width W1 of the first leg 441 is in the range of 1 mm to 3 mm, or in the range of 1.5 mm to 2.5 mm, or in the range of 1.75 mm to 2.25 mm. In some embodiments, the width W1 of the first leg 441 is uniform throughout its depth into the gas distribution plate. In some embodiments, the width of the first leg varies along its depth into the gas distribution plate.

[0061] In some embodiments, the first leg is a continuous, circular channel formed in the front surface of the gas distribution plate. Figure 10 shows a continuous channel for the first leg 441 and multiple openings 444 in the second leg 442, each having an opening connecting the second leg 442 to the channel that is the first leg 441.

[0062] In some embodiments, the first leg of the vacuum channel has an inner diameter in the range of 300 mm to 302 mm. In some embodiments, the first leg of the vacuum channel has an outer diameter in the range of 301 mm to 305 mm.

[0063] 11D, the inlet opening 446 of the vacuum channel 440 has a fillet 447 on the front surface 321. In some embodiments, the fillet 447 has a radius r in the range of 0.15 mm to 0.4 mm. fIf fillet 447 is present, the inner diameter ID and outer diameter OD are measured from the outer extent of fillet 447.

[0064] 11E, the inlet opening 446 of the vacuum channel 440 has a chamfer 449 on the front surface 321. In some embodiments, the chamfer 449 has a chamfered surface with a length ranging from 0.1 mm to 0.4 mm. If the chamfer 449 is present, the inner diameter ID and outer diameter OD are measured from the outer extent of the chamfer 449.

[0065] 11A-11C, in some embodiments, second leg 442 has a second width W2 in the range of 1.1 mm to 6 mm, or in the range of 2 mm to 5 mm, or in the range of 3 mm to 4 mm. In some embodiments, width W2 of second leg 442 is the same as or wider than width W1 of first leg 441.

[0066] In some embodiments, the second angle Θ2 of the second leg 442 is less than the first angle Θ1 of the first leg 441. In some embodiments, the second angle Θ2 is in the range of 25° to 70°, or in the range of 30° to 65°, or in the range of 35° to 60°, or in the range of 40° to 55°.

[0067] Referring again to FIG. 10, in some embodiments, the shape of the vacuum channel 440 allows the wafer 60 to overhang the edge ring 245 by a length ranging from 1 mm to 5 mm, 1.5 mm to 4 mm, or 2 mm to 3 mm.

[0068] Some embodiments of the present disclosure are directed to a processing chamber incorporating a gas distribution plate 320 as shown in Figures 10 through 1 IE. In some embodiments, the processing chamber includes a first gas distribution plate having a first front surface opposite a top surface of the substrate support, the first gas distribution plate having a first vacuum channel in the first front surface, the first vacuum channel having a first outer diameter. In some embodiments, the processing chamber includes a second processing region including a second gas distribution plate having a second front surface opposite the top surface of the substrate support, the second gas distribution plate having a second vacuum channel on the second front surface, the second vacuum channel having an inlet opening on the front surface and an outlet opening on a second back surface of the second gas distribution plate, the second vacuum channel having a first leg extending a first length from the inlet opening on the second front surface at a first angle relative to the second front surface and a second leg extending a second length from the first leg to the outlet opening on the second back surface at a second angle relative to the second front surface, and the inlet opening of the second vacuum channel has a second inner diameter greater than the first outer diameter.

[0069] A further embodiment is directed to a processing method in which a wafer is exposed to a first reactant in a first processing region and a second reactant in a second processing region, the first processing region and the second processing region having gas distribution plates with vacuum channels having different inner diameters.

[0070] References throughout this specification to "one embodiment," "a particular embodiment," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of phrases such as "in one or more embodiments," "a particular embodiment," "in one embodiment," or "in an embodiment" in various places throughout this specification do not necessarily refer to the same embodiment of the present disclosure. Furthermore, particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0071] Although the present disclosure has been described herein with reference to particular embodiments, those skilled in the art will recognize that the described embodiments are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed method and apparatus without departing from the spirit and scope of the present disclosure. Accordingly, the present disclosure may include modifications and variations that come within the scope of the appended claims and their equivalents.

Claims

1. a body having a front surface and a back surface defining a thickness of said body and an outer peripheral edge; a vacuum channel having an inlet opening on the front surface and an outlet opening on the back surface, the vacuum channel including a first leg extending a first length from the inlet opening on the front surface at a first angle relative to the front surface, and a second leg extending a second length from the first leg to the outlet opening on the back surface at a second angle relative to the front surface; A gas distribution plate comprising:

2. The gas distribution plate of claim 1 , wherein the first legs have a first length in the range of 1 mm to 7.5 mm.

3. The gas distribution plate of claim 1 , wherein the first angle ranges from 80° to 100° relative to the front surface.

4. The gas distribution plate of claim 1 , wherein the first legs have a first width in the range of 1 mm to 3 mm.

5. The gas distribution plate of claim 1 , wherein the vacuum channels have an inner diameter in the range of 300 mm to 302 mm.

6. The gas distribution plate of claim 5 , wherein the vacuum channels have an outer diameter in the range of 301 mm to 305 mm.

7. 2. The gas distribution plate of claim 1, wherein the inlet opening has a fillet on the front surface, the fillet having a radius in the range of 0.15 mm to 0.4 mm.

8. 2. The gas distribution plate of claim 1, wherein the inlet opening has a chamfer on the front surface, the chamfer having a chamfered surface length in the range of 0.1 mm to 0.4 mm.

9. The gas distribution plate of claim 1 , wherein the second legs have a second width in the range of 2 mm to 5 mm.

10. The gas distribution plate of claim 1 , wherein the second legs have a second angle relative to the front surface in the range of 35° to 60°.

11. a substrate support having a top surface configured to support a wafer and move the wafer between a plurality of processing regions during processing, the substrate support including an edge ring having an inwardly projecting internal protrusion, the internal protrusion sized to provide a gap between the top surface of the substrate support and a top surface of the inwardly projecting internal protrusion; a first processing region comprising a first gas distribution plate having a first front surface opposite the top surface of the substrate support, the first gas distribution plate having a first vacuum channel in the first front surface, the first vacuum channel having a first outer diameter; a second processing region comprising a second gas distribution plate having a second front surface opposite the top surface of the substrate support, the second gas distribution plate having a second vacuum channel on the second front surface, the second vacuum channel having an inlet opening on the front surface and an outlet opening on a second back surface of the second gas distribution plate, the second vacuum channel having a first leg extending a first length from the inlet opening on the second front surface at a first angle relative to the second front surface and a second leg extending a second length from the first leg to the outlet opening on the second back surface at a second angle relative to the second front surface, the inlet opening of the second vacuum channel having a second inner diameter greater than the first outer diameter; A processing chamber comprising:

12. The processing chamber of claim 1 , wherein the first leg has a first length in the range of 1 mm to 7.5 mm.

13. The processing chamber of claim 1 , wherein the first angle ranges from 80° to 100° relative to the front surface.

14. The processing chamber of claim 1 , wherein the first leg has a first width in the range of 1 mm to 3 mm.

15. The processing chamber of claim 1 , wherein the vacuum channel has an inner diameter in the range of 300 mm to 302 mm.

16. The processing chamber of claim 5 , wherein the vacuum channel has an outer diameter in the range of 301 mm to 305 mm.

17. 10. The processing chamber of claim 1, wherein the entrance opening has a fillet on the front surface, the fillet having a radius in the range of 0.15 mm to 0.4 mm.

18. 10. The processing chamber of claim 1, wherein the inlet opening has a chamfer on the front surface, the chamfer having a chamfered surface length in the range of 0.1 mm to 0.4 mm.

19. The processing chamber of claim 1 , wherein the second leg has a second width in the range of 2 mm to 5 mm.

20. 1. A method of processing a substrate, comprising: exposing a wafer supported on the substrate support of claim 11 to a first reactant in the first processing region of claim 11; moving the wafer to the second processing region of claim 11; exposing the wafer to a second reactant in the second processing region of claim 11; A method comprising:

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