Cleaning method, semiconductor device manufacturing method, program, and substrate processing apparatus.

Abstract

This technology provides a method for suppressing uneven etching within the processing chamber. [Solution] (a) A step of supplying either a cleaning gas or an additive gas that reacts with the cleaning gas as a first gas from one or more first positions in the first direction into a processing chamber configured to accommodate a substrate along a plane perpendicular to the first direction; (b) A step of supplying the other of the cleaning gas or an additive gas that reacts with the cleaning gas as a second gas from one or more second positions in the first direction that are different from the first positions into the processing chamber.

Description

Technical Field

[0001] The present disclosure relates to a cleaning method, a method for manufacturing a semiconductor device, a program, and a substrate processing apparatus.

Background Art

[0002] As one step of a semiconductor device manufacturing process, there may be a step of cleaning (etching) a processing chamber in which a processing gas is supplied to a substrate using a cleaning gas (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing unevenness in the etching amount in a processing chamber.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a technique including: (a) a step of supplying, as a first gas, either a cleaning gas or an additive gas that reacts with the cleaning gas from one or a plurality of first positions in the first direction into a processing chamber configured to accommodate a substrate along a plane perpendicular to the first direction; and (b) a step of supplying, as a second gas, the other of the cleaning gas or the additive gas that reacts with the cleaning gas from one or a plurality of second positions different from the first position in the first direction into the processing chamber.

Effects of the Invention

[0006] According to the present disclosure, unevenness in the etching amount in a processing chamber can be suppressed. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram of a substrate processing apparatus used in one aspect of the present disclosure. [Figure 2] Figure 2 is a transverse cross-sectional view of a substrate processing apparatus used in one aspect of this disclosure. [Figure 3] Figure 3 is a schematic diagram of a controller for a substrate processing apparatus used in one aspect of the present disclosure, and shows the controller's control system in block diagram form. [Figure 4] Figure 4 is a timing chart showing the first cleaning process in one aspect of this disclosure. [Figure 5] Figure 5 is a timing chart showing a second cleaning step in one aspect of the present disclosure. [Figure 6] Figure 6 is a timing chart showing a modified example of the first cleaning step in one aspect of this disclosure. [Figure 7] Figure 7 is a timing chart showing a modified example of the second cleaning step in one aspect of the present disclosure. [Modes for carrying out the invention]

[0008] <One aspect of this disclosure> Hereinafter, one aspect of this disclosure will be described, mainly with reference to Figures 1 to 7. Note that the drawings used in the following description are all schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0009] (Configuration of substrate processing apparatus) Figure 1 shows a schematic configuration of the substrate processing apparatus 1. As shown in Figure 1, the substrate processing apparatus 1 comprises a reaction tube 2 as a reaction vessel and a heater 3 as a temperature controller. The reaction tube 2 is formed in a cylindrical shape with a ceiling that closes the upper end and an opening that opens the lower end. The reaction tube 2 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). The heater 3 is cylindrical in shape. The heater 3 is mounted vertically and concentrically with the reaction tube 2 by being supported by a holding plate (not shown). The heater 3 also functions as an activation mechanism (excitation unit) that activates (excites) the gas with heat.

[0010] A temperature detector 4 is installed inside the reaction tube 2. In the example shown in Figure 1, the temperature detector 4 is erected along the inner wall of the reaction tube 2.

[0011] A manifold 5 is positioned at the bottom of the reaction tube 2. The processing vessel 7 is mainly composed of the reaction tube 2 and the manifold 5. The manifold 5 is formed in a cylindrical shape with open upper and lower ends. A seal cap 9, which acts as a lid, is provided below the manifold 5. The seal cap 9 can airtightly close the opening at the lower end of the manifold 5. In other words, the lower end of the manifold 5 is closed by the disc-shaped seal cap 9.

[0012] The lower end of the reaction tube 2 and the manifold 5 are connected via a sealing member 6 such as an O-ring. The manifold 5 supports the lower end of the reaction tube 2. The reaction tube 2 is installed vertically, similar to the heater 3. In this state, the seal cap 9 closes the opening at the lower end of the processing container 7. The manifold 5 is made of a metal material such as stainless steel (SUS).

[0013] A processing chamber 8 is formed inside the processing container 7. The processing chamber 8 can accommodate a wafer W as a substrate. Processing is performed on the wafer W in the processing chamber 8. In this embodiment, the processing container 7 is used with the "direction of the central axis CA" as the vertical direction, which is the first direction. The direction of the central axis CA is also the first direction of the processing chamber 8.

[0014] Based on the temperature information detected by the temperature detector 4, the energization condition of the heater 3 is adjusted. As a result, a desired temperature distribution is achieved in the processing chamber 8.

[0015] In FIG. 2, the substrate processing apparatus 1 is shown in a cross-sectional view in the horizontal direction. As also shown in FIG. 2, the reaction tube 2 has a first buffer chamber 2A and a second buffer chamber 2B. The first buffer chamber 2A and the second buffer chamber 2B are formed to face each other so as to project outward (radially) from the reaction tube 2. The first buffer chamber 2A and the second buffer chamber 2B are partitioned into a plurality of spaces by a partition wall extending vertically. In the present embodiment, both the first buffer chamber 2A and the second buffer chamber 2B are partitioned into four.

[0016] The boundary walls between the first buffer chamber 2A, the second buffer chamber 2B, and the processing chamber 8 are formed in an arc-shaped cross-sectional shape having the same inner diameter as the inner diameter of the reaction tube 2 at a location where the first buffer chamber 2A and the second buffer chamber 2B are not provided. As a result, the periphery of the wafer W is surrounded by a wall concentric with the wafer W. A plurality of slits for communicating both sides thereof are provided in the boundary wall.

[0017] In each partition of the first buffer chamber 2A, nozzles 23-1, 23-2, 23-3, and 23-4 as the first nozzles are respectively installed. In the two end partitions of the four partitions of the second buffer chamber 2B, nozzles 23-5 and 23-7 as the first nozzles are respectively arranged. The nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 are adapted to supply gas toward the vicinity of the wafer W accommodated in the processing chamber 8.

[0018] Nozzles 23-1, 23-2, 23-3, 23-4, 23-5, 23-7 extend in the first direction, i.e., the vertical direction, along the inner wall of the reaction tube 2 inside the reaction tube 2. It can also be said that nozzles 23-1, 23-2, 23-3, 23-4, 23-5, 23-7 are erected parallel to the central axis CA. Nozzle 23 is sometimes referred to as a long nozzle. A supply hole 24(LA) as a plurality of first supply holes is formed in nozzle 23 along the first direction. In a state where the wafer W is held on the boat 14, the supply hole 24(LA) opens toward the wafer W. A selected predetermined processing gas is supplied from the supply hole 24(LA) into the processing chamber 8.

[0019] An opening 2E is formed below the first buffer chamber 2A. Nozzles 23-1, 23-2, 23-3, 23-4 are inserted into the opening 2E. An opening 2F is formed below the second buffer chamber 2B. Nozzles 23-5, 23-7 are inserted into the opening 2F.

[0020] The opening 2E is formed to have substantially the same width as the first buffer chamber 2A. The opening 2F is formed to have substantially the same width as the second buffer chamber 2B.

[0021] Below the second buffer chamber 2B, nozzles 23-6, 23-8 as the second nozzles are arranged. Nozzles 23-6, 23-8 are short tubes extending horizontally from the manifold 5. Nozzles 23-6, 23-8 are sometimes referred to as short nozzles.

[0022] Two supply holes 24(LB) are formed near the tips of nozzles 23-6, 23-8. As shown in FIG. 2, the supply holes 24(LB) of nozzles 23-6, 23-8 open in the circumferential direction of the reaction tube 2.

[0023] Hereinafter, nozzles 23-1 to 23-8 may be collectively referred to as nozzle 23. In FIG. 1, the positions of nozzle 23, exhaust pipe 32, etc. are for convenience due to the illustrated relationship.

[0024] The nozzle 23 is made of a heat-resistant material such as quartz or SiC. A gas supply pipe 19 is connected to each nozzle 23.

[0025] As shown in Figure 1, a boat 14 serving as a substrate support is housed inside the processing chamber 8. The boat 14 holds multiple wafers W, for example 25 to 150 wafers, arranged at predetermined intervals, in a shelf-like manner so as to be stacked in the direction of the central axis CA, and so as to be aligned with a plane perpendicular to the central axis CA (i.e., in this embodiment, aligned with the horizontal direction). The processing chamber 8 is configured to include the boat 14 capable of holding the wafers W within the processing chamber 8. The boat 14 is made of a heat-resistant material such as quartz or SiC.

[0026] Below the boat 14, an insulating structure 15 is positioned as an insulating section. The boat 14 is supported by the insulating structure 15. The substrate support 30 is composed of the boat 14 and the insulating structure 15. The substrate support 30 is capable of supporting a wafer W. Inside the processing container 7, there is a substrate placement area EA and a non-substrate placement area EB. The substrate placement area EA is a region that includes the area where the wafer W is placed. The non-substrate placement area EB is located below the substrate placement area EA. The non-substrate placement area EB includes the area surrounded by the manifold 5. The non-substrate placement area EB is a region where the wafer W is not placed.

[0027] The outer shape of the thermal insulation structure 15 is cylindrical. The thermal insulation structure 15 is supported by a rotating shaft 13 that passes through the seal cap 9. The center line of the rotating shaft 13 coincides with the central axis CA of the reaction tube 2. The rotating shaft 13 is connected to a rotating mechanism 16 installed on the lower surface of the seal cap 9. A magnetic fluid seal, for example, is provided in the portion of the rotating shaft 13 that passes through the seal cap 9. The rotating shaft 13 is configured to rotate while the inside of the reaction tube 2 is airtightly sealed. As the rotating shaft 13 rotates, the thermal insulation structure 15 and the boat 14 rotate together.

[0028] The seal cap 9 is driven vertically by a boat elevator 17, which acts as a lifting device. The boat elevator 17 raises and lowers the substrate support 30. The raising and lowering of the substrate support 30 causes the boat 14 to be moved in and out of the reaction tube 2 through the opening of the reaction tube 2. In other words, the reaction tube 2 accommodates the boat 14 so that it can be moved in and out through the opening. The seal cap 9 is configured to close the lower end opening of the manifold 5 so that the boat 14 can be moved in and out.

[0029] The substrate processing apparatus 1 has a gas supply mechanism 18 as either a first gas supply system or a second gas supply system. The gas supply mechanism 18 includes a gas supply pipe 19, a mass flow controller (MFC) 21, and a valve 22 which is an on / off valve. The gas supply mechanism 18 supplies raw material gas, reaction gas, inert gas, cleaning gas, additive gas, etc., into the processing chamber 8 as processing gases used for substrate processing. The processing gas supplied by the gas supply mechanism 18 is selected according to the type of film to be deposited and the type of gas used for the cleaning process.

[0030] Furthermore, the raw material gas and the reaction gas, or both, are also referred to as film-forming gases, and the raw material gas supply system and the reaction gas supply system, or both, are also referred to as film-forming gas supply systems (film-forming gas supply lines).

[0031] In this embodiment, the gas supply mechanism 18 includes a raw material gas supply section, a reaction gas supply section, an inert gas supply section, a purge gas supply section, a cleaning gas supply section, and an additive gas supply section. Each of these gas supply sections is composed of a nozzle, for example, at least one of nozzles 23-1 to 23-8. Hereinafter, when these gas supply sections are not distinguished, they will be described as gas supply section 20. The gas supply sections 20 may also be considered as part of the gas supply mechanism 18. A gas supply pipe 19 is connected to each of the gas supply sections 20. The gas supply pipe 19 is provided with a mass flow controller (MFC) 21, which is a flow rate controller (flow rate control section), and a valve 22, which is an on / off valve, in order from the upstream direction. Each of the multiple nozzles 23 penetrates the side wall of the manifold 5. The downstream end of each gas supply pipe 19 is connected to a nozzle 23.

[0032] From the upstream of the gas supply pipe 19, the gas supply unit 20 can selectively supply the desired processing gas to one or more nozzles 23. The gas supply pipe 19, MFC 21, and valve 22 may be configured as an integrated gas supply system in which these elements are combined. In the integrated gas supply system, the opening and closing operation of the valve 22 and the flow rate adjustment operation of the MFC 21 are controlled by a controller 36 acting as a control unit.

[0033] The position of the supply holes 24(LA) formed in nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 is the first position LA. The first position LA is the position of the substrate placement region EA in the first direction.

[0034] The position of the supply hole 24(LB) formed in nozzles 23-6 and 23-8 is the second position LB. The second position LB is the position of the substrate non-placement region EB in the first direction. The second position LB is a position below the boat 14, i.e., the substrate support portion, in the first direction.

[0035] The second position LB is in a different position from the first position LA in the first direction. The second position LB is closer to the lower end of the processing chamber 8 than the first position. Furthermore, the first position LA is in a position in the first direction where the boat 14, which serves as a substrate support, is provided. The second position LB is in a position in the first direction where the thermal insulation structure 15, which serves as a thermal insulation section, is provided. It can also be said that the second position LB is in a position in the first direction where no substrate support is provided.

[0036] As shown in Figure 2, nozzles 23-6 and 23-8 are located at different positions in the circumferential direction of the processing chamber 8. Therefore, the positions of the supply holes 24(LB) formed in nozzles 23-6 and 23-8 are also at different positions in the circumferential direction of the processing chamber 8. The position of the supply hole 24(LB) formed in nozzle 23-6 is the 2-1 position LB1, and the position of the supply hole 24(LB) formed in nozzle 23-8 is the 2-2 position LB2. The 2nd position LB thus includes the 2-1 position LB1 and the 2-2 position LB2, which are located at different positions in the circumferential direction of the processing chamber 8.

[0037] As shown in Figure 2, nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 are located at different positions in the circumferential direction of the processing chamber 8. Therefore, the positions of the supply holes 24(LA) formed in nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 are also at different positions in the circumferential direction of the processing chamber 8, as shown in Figure 2. Specifically, if the position of the supply hole 24(LA) formed in any of the nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 is designated as position 1-1 LA1, then the position of the supply hole 24(LA) formed in any of the other nozzles 23 can be said to be position 1-2 LA2. In Figure 2, the position of the supply hole 24(LA) formed in nozzle 23-1 is exemplified as position 1-1 LA1. In this case, the position of the supply hole 24(LA) formed in nozzles 23-2, 23-3, 23-4, 23-5, and 23-7 is the 1st-2nd position LA2. That is, the 1st position LA, which is the position of the supply hole 24(LA) formed in nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 respectively, is a configuration that includes the 1st-1st position LA1 and the 1st-2nd position LA2, which is located at a different position from the 1st-1st position LA1 in the circumferential direction of the processing chamber 8.

[0038] As shown in Figure 2, when viewed in the first direction, nozzles 23-1 and 23-7 are positioned opposite each other across the central axis CA. Similarly, when viewed in the first direction, nozzles 23-2 and 23-8 are also positioned opposite each other across the central axis CA. Furthermore, nozzles 23-3 and 23-6 are also positioned opposite each other across the central axis CA. In addition, nozzles 23-4 and 23-5 are also positioned opposite each other across the central axis CA. In other words, when viewing the processing chamber 8 from above, nozzles 23-1 and 23-7 are positioned opposite each other across the central part of the processing chamber 8. The relative positions of nozzles 23-2 and 23-8, nozzles 23-3 and 23-6, and nozzles 23-4 and 23-5 are also positioned opposite each other across the central part of the processing chamber 8 when viewing the processing chamber 8 from above.

[0039] Furthermore, "opposite positions" include not only positions where the central angle is 180 degrees across the central axis CA, but also positions within a predetermined angular range that includes 180 degrees. This angular range refers to positions where, as shown in Figure 2, the angle θ in the counterclockwise direction from a specific nozzle 23 is between 120 degrees and 240 degrees when viewing the processing chamber 8 from above. Figure 1 illustrates the counterclockwise angle θ from nozzle 23-1.

[0040] From this perspective, for example, nozzle 23-8 is in a position opposite nozzle 23-1. Similarly, nozzles 23-6 and 23-7 are in positions opposite nozzle 23-2. Furthermore, nozzles 23-5 and 23-8 are in positions opposite nozzle 23-3. In addition, nozzle 23-6 is in a position opposite nozzle 23-4. The range of the angle θ is preferably 140 degrees or more and 220 degrees or less, and more preferably 160 degrees or more and 200 degrees or less. That is, the narrower the range of this angle θ, the more the two nozzles 23 in question will be in a position where they are facing each other in a direction closer to the front as they are in an "opposing position".

[0041] Furthermore, the relationship of "opposing positions" for nozzles 23 is relative to each nozzle 23 that satisfies this relationship. For example, nozzles 23-4 and 23-3 are in opposing positions to nozzle 23-5. Nozzles 23-3 and 23-4 are in opposing positions to nozzle 23-6. Nozzles 23-1 and 23-2 are in opposing positions to nozzle 23-7. Nozzles 23-2 and 23-1 are in opposing positions to nozzle 23-8.

[0042] As shown in Figure 1, an exhaust port 26 is formed in the outer wall of the second buffer chamber 2B in the section where the nozzle 23 is not located. Multiple slits provided in the boundary wall between the section of the second buffer chamber 2B where the nozzle 23 is not located and the processing chamber 8 constitute exhaust openings (exhaust slits) for exhausting gas from the processing chamber 8. An exhaust pipe 32 is attached to the exhaust port 26. The exhaust pipe 32 is connected to a vacuum pump 35, which is a vacuum evacuation device, via a pressure sensor 33, which is a pressure detector (pressure detection unit), and an APC (Auto Pressure Controller) valve 34, which is a pressure regulator (pressure adjustment unit). The pressure sensor 33 detects the pressure inside the processing chamber 8. With this configuration, the pressure inside the processing chamber 8 can be adjusted to a pressure appropriate for the processing.

[0043] As shown in Figure 3, the rotating mechanism 16, the boat elevator 17, the MFC 21 of the gas supply mechanism 18, the valve 22, and the APC valve 34 are connected to a controller 36, which acts as a control unit for controlling them. The controller 36 is configured as a computer equipped with a CPU (Central Processing Unit) 36a, RAM (Random Access Memory) 36b, a storage device 36c, and I / O ports 36d. The RAM 36b, storage device 36c, and I / O ports 36d are configured to exchange data with the CPU 36a via an internal bus 36e. The controller 36 is connected to an input / output device 37, which is configured as, for example, a touch panel, and an external storage device 38 for storing various types of data.

[0044] The storage device 36c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 36c contains, in a readable format, control programs for controlling the operation of the board processing device 1, and programs 36p such as process recipes that describe the procedures and conditions for board processing, as described later. The process recipe is a combination of steps in the board processing described later that cause the controller 36 to execute and obtain predetermined results, and functions as a program. Hereinafter, process recipes and control programs will be collectively referred to simply as "programs" (program products). Similarly, process recipes will be simply referred to as "recipes." In this specification, the term "program" may include only recipes, only control programs, or both. RAM 36b is configured as a memory area (work area) where programs and data read by the CPU 36a are temporarily held.

[0045] I / O port 36d is connected to the MFC 21, valve 22, pressure sensor 33, APC valve 34, vacuum pump 35, temperature sensor 4, heater 3, rotary mechanism 16, boat elevator 17, etc.

[0046] The CPU 36a is configured to read and execute a control program from the storage device 36c, and to read a recipe from the storage device 36c in response to input of operation commands from the input / output device 37. The CPU 36a is configured to control the flow rate adjustment operation of various gases by the MFC 21, the opening and closing operation of the valve 22, the opening and closing operation of the APC valve 34, the pressure adjustment operation by the APC valve 34, the starting and stopping of the vacuum pump 35, the temperature adjustment operation of the heater 3 based on the temperature sensor 4, the rotation and rotation speed adjustment operation of the boat 14 by the rotating mechanism 16, and the raising and lowering operation of the boat 14 by the boat elevator 17, in accordance with the contents of the read recipe.

[0047] The controller 36 can be configured by installing the above-mentioned program stored in the external storage device 123 onto a computer. The external storage device 123 includes, for example, magnetic disks such as HDDs, optical disks such as CDs, and semiconductor memory such as USB memory and SSDs. The storage device 36c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term recording media may include only the storage device 36c, only the external storage device 38, or both. The program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 38.

[0048] Next, we will describe the process of forming a film on a wafer W using the substrate processing apparatus 1 described above (film deposition process). Here, we will describe an example in which a silicon nitride (SiN) film is formed on a wafer W by supplying a silicon (Si)-containing gas as a raw material gas and a nitrogen (N)-containing gas as a reaction gas to the wafer W. In the following description, the operation of each part of the substrate processing apparatus 1 is controlled by the controller 36.

[0049] (Wafer charge and boat load) After multiple wafers W are loaded into the boat 14 (wafer charging), the boat 14 is moved into the processing chamber 8 by the boat elevator 17 (boat loading). The lower part of the reaction tube 2 is sealed airtight with a seal cap 9.

[0050] (Pressure adjustment and temperature adjustment) The processing chamber 8 is evacuated by a vacuum pump 35 to a predetermined pressure (vacuum level). The pressure inside the processing chamber 8 is measured by a pressure sensor 33. Based on the measured pressure information, the APC valve 34 is controlled by feedback. The processing chamber 8 is also heated by a heater 3 to bring the wafer W to a predetermined temperature. The rotation of the boat 14 and the wafer W is also started by the rotation mechanism 16.

[0051] At this time, the manifold 5 is heated by a heater element (not shown) to a set temperature of, for example, 200°C or higher but less than 300°C. The set temperature may be set so that, for example, the partial pressure of the by-product does not exceed the saturated vapor pressure at the set temperature. The by-product is not limited to one, and may include ammonium chloride, chlorosilane polymer, and silicon deposited on surfaces other than the wafer W. This heating of the heater element is continued at least until the film deposition process is completed.

[0052] (Film deposition process) [Raw material gas supply process] Once the temperature inside the processing chamber 8 stabilizes at a preset temperature, the raw material gas is supplied to the wafer W inside the processing chamber 8 from the gas supply unit 20. The raw material gas is controlled by the MFC 21 to a desired flow rate and supplied into the processing chamber 8 via the gas supply pipe 19 and nozzle 23.

[0053] [Raw material gas exhaust process] Next, the supply of raw material gas is stopped, and the processing chamber 8 is evacuated using the vacuum pump 35. During this evacuation process, the APC valve 34 is temporarily fully opened, and the exhaust port 26 may be heated by the large flow rate of high-temperature exhaust gas.

[0054] [Reaction gas supply process] Next, a reaction gas is supplied to the wafer W in the processing chamber 8. The reaction gas is controlled by the MFC 21 to a desired flow rate and supplied into the processing chamber 8 via the gas supply pipe 19 and nozzle 23. The reaction gas is supplied, for example, through a different nozzle 23 than the one supplying the raw material gas.

[0055] [Reaction gas exhaust process] Next, the supply of reaction gas is stopped, and the processing chamber 8 is evacuated using the vacuum pump 35.

[0056] By performing the above-described four steps in a predetermined cycle (one or more times), a SiN film of a predetermined composition and predetermined thickness can be formed on the wafer W.

[0057] (Boat unloading and wafer discharge) After forming a film of a predetermined thickness, inert gas is supplied from the gas supply unit 20, replacing the gas inside the processing chamber 8 with inert gas and returning the pressure inside the processing chamber 8 to atmospheric pressure. Subsequently, the seal cap 9 is lowered by the boat elevator 17, and the boat 14 is removed from the reaction tube 2 (boat unloading). After that, the processed wafer W is removed from the boat 14 (wafer discharge).

[0058] Examples of temperature conditions (wafer temperature) for forming a SiN film on a wafer W include 300°C to 700°C. In this specification, numerical ranges such as "300°C to 700°C" indicate that the lower and upper limits are included within that range. Therefore, for example, "300°C to 700°C" means "300°C or more and 700°C or less." The same applies to other numerical ranges. Furthermore, the film formation process is not limited to forming a SiN film on the wafer W, but can also be suitably applied to forming an SiO2 film, a SiON film, or the like on the wafer W.

[0059] As the raw material gas, a Si-containing gas can be used, for example, a gas containing Si and halogens, i.e., a halosilane gas. As the halosilane gas, for example, chlorosilane gases such as monochlorosilane (SiH3Cl) gas, dichlorosilane (SiH2Cl2) gas, trichlorosilane (SiHCl3) gas, tetrachlorosilane (SiCl4) gas, and hexachlorodisilane (Si2Cl6) gas can be used. One or more of these can be used as the raw material gas.

[0060] As the nitrogen-containing gas used as the reaction gas, for example, hydrogen nitride-based gases such as ammonia (NH3) gas, diazene (N2H2) gas, and hydrazine (N2H4) gas can be used. One or more of these can be used as the reaction gas.

[0061] As the inert gas, for example, nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon (Xe) gas, and other noble gases can be used. One or more of these can be used as the inert gas. This also applies to each of the steps described later.

[0062] [Cleaning process] Next, the processing chamber 8 is cleaned. When the above-described film deposition process is performed, deposits (deposited films) containing films formed by the reaction of the film-depositing agent and by-products generated during the film deposition process may form on the surfaces of components facing the inside of the processing chamber 8, such as the inner wall of the reaction tube 2, the inner wall of the manifold 5, the surface of the heat insulating structure 15, and the surface of the boat 14. These deposited films accumulate as the above-described film deposition process is repeated, and gradually become thicker. These accumulated deposited films can peel off and adhere to the wafer W during subsequent processing, becoming a source of foreign matter in the film deposition process. Therefore, in preparation for subsequent film deposition processes, the deposited films are removed from the processing chamber 8 when their thickness reaches a predetermined thickness. The properties (composition, film thickness, etc.) of deposits differ in the nozzle, furnace (reaction tube 2), and furnace opening (manifold 5), and generally, deposits tend to accumulate particularly in the nozzle 23 that supplies the raw material gas and in the low-temperature portion on the opening side. Furthermore, in the low-temperature region within the processing chamber 8 (the region not surrounded by the heater 3 and other than the region horizontally surrounding the wafer array region), deposits and other materials are more likely to adhere compared to the high-temperature region (the region surrounded by the heater 3 and the region horizontally surrounding the wafer array region).

[0063] The following cleaning process uses a cleaning gas and an additive gas that reacts with this cleaning gas. As the cleaning gas, for example, a gas containing halogen elements (fluorine (F), chlorine (Cl), bromine (Br), iodine (I), etc.) can be used. Examples of halogen-containing gases include fluorine (F2) gas, hydrogen fluoride (HF) gas, nitrogen trifluoride (NF3) gas, chlorine trifluoride (ClF3) gas, and other F-containing gases. Alternatively, examples of halogen-containing gases include chlorine (Cl2) gas, hydrogen chloride (HCl) gas, chlorine trifluoride (ClF3) gas, and other Cl-containing gases. One or more of these can be used as the cleaning gas.

[0064] In addition, gases such as hydrogen (H2), oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), isopropyl alcohol ((CH3)2)CHOH), methanol (CH3OH), water vapor, nitrogen dioxide (NO2), and HF gas can be used as additive gases. One or more of these can be used as additive gases.

[0065] A halogen-containing gas can be used as the cleaning gas, and a halogen-free gas can be used as the additive gas. Alternatively, a first halogen-containing gas can be used as the cleaning gas, and a second halogen-containing gas can be used as the additive gas. When HF gas is used as the additive gas, it is preferable to use one of the following gases as the cleaning gas: F2 gas, ClF3 gas, NF3 gas, or a mixture thereof.

[0066] (Boat Road: S1) The empty boat 14, without any wafers W loaded, is brought into the processing chamber 8 using the same procedure as for loading the boat during the film deposition process.

[0067] (Pressure adjustment and temperature adjustment: S2) The processing chamber 8 is evacuated by a vacuum pump 35 to achieve a vacuum level corresponding to the desired pressure. The vacuum pump 35 is kept running continuously, at least until the purging of residual cleaning gas from the processing chamber 8 is complete. During this time, an inert gas is supplied as a purge gas from the gas supply pipe 19. The supply of the inert gas may be continued, for example, until the cleaning process is completed.

[0068] The power supply to the heater 3 is controlled so that the processing chamber 8 reaches a predetermined first temperature (T1), thereby lowering the temperature inside the processing chamber 8. The first temperature (T1) is, for example, within the range of 200 to 400°C. In addition, heating by the heater 3 and cooling by the cooling mechanism are controlled so that the furnace opening reaches a predetermined second temperature (T2). This temperature adjustment is continued at least until the cleaning of the processing chamber 8 is completed. Preferably, the first temperature range and the second temperature range are separated by at least 100°C at the temperature measurement point and do not overlap.

[0069] Next, the boat 14 is rotated by the rotating mechanism 16. The rotation of the boat 14 by the rotating mechanism 16 continues at least until the cleaning of the processing chamber 8 is completed. Note that the boat 14 does not necessarily have to be rotated.

[0070] (First cleaning process) Next, the first cleaning process is performed. In the first cleaning process, (a) A step of supplying either a cleaning gas or an additive gas as the first gas into the processing chamber 8 from a first position in the inner circumferential direction of the processing chamber 8, (b) A step of supplying the other of the cleaning gas or additive gas as the second gas into the processing chamber 8 from a second position different from the first position in the inner circumferential direction of the processing chamber 8, Execute this. Specifically, in the first cleaning process, each step A to F is considered one cycle, according to the timing chart shown in Figure 4, and this cycle is executed a predetermined number of times (one or more times). In Figure 4, "CLN," "addition," and "inert" refer to the cleaning gas, addition gas, and inert gas, respectively. The same applies to Figures 5 to 7.

[0071] In step A, the APC valve 34 is closed. Then, cleaning gas is supplied into the processing chamber 8 as the first gas from nozzle 23-1. Additionally, additive gas is supplied into the processing chamber 8 as the second gas from nozzle 23-7. Furthermore, inert gas is supplied into the processing chamber 8 from nozzles 23-2, 23-3, 23-4, 23-5, and 23-6. In this embodiment, an example in which cleaning gas is used as the first gas and additive gas as the second gas is described, but it is also possible to use additive gas as the first gas and cleaning gas as the second gas. In addition, in this embodiment, when the APC valve 34 is closed, in addition to cases in which exhaust from the processing chamber 8 is completely stopped, there may also be cases in which exhaust from the processing chamber 8 is slightly continued for purposes such as pressure adjustment within the processing chamber 8.

[0072] The treatment chamber 8 contains both a cleaning gas and an additive gas. The cleaning gas and the additive gas react within the treatment chamber 8, generating halogen-containing active species (halogen-containing active species) such as halogen radicals or compounds containing activated halogen elements. A mixed gas, formed by adding halogen-containing active species to the cleaning gas, is present within the treatment chamber 8. This mixed gas comes into contact with the deposits inside the treatment chamber 8. At this time, a thermochemical reaction (i.e., etching reaction) between the mixed gas and the deposits makes it possible to remove the deposits adhering to the inside of the treatment chamber 8. The halogen-containing active species promote the etching reaction by the cleaning gas, increasing the etching rate of the deposits; in other words, assisting etching. For example, when using a fluorine-containing gas as the cleaning gas and gases containing N and O as the additive gases, these reactions generate fluorine radicals (F) within the treatment chamber 8. * This makes it possible to generate halogen-containing active species such as ) and nitrosyl fluoride (FNO).

[0073] The nozzle 23-1 that supplies cleaning gas and the nozzle 23-7 that supplies additive gas are both long nozzles. The supply hole 24(LA) of the long nozzle is located in the substrate placement region EA, which is the first position LA. Therefore, the etching reaction described above proceeds in the processing chamber 8, mainly in the substrate placement region EA, with local bias suppressed. However, the etching reaction described above may also proceed in the non-substrate placement region EB with local bias suppressed.

[0074] After a predetermined time, for example 30 seconds, in step B, the supply of cleaning gas from nozzle 23-1 is stopped, and the supply of additive gas from nozzle 23-7 is also stopped. The supply of inert gas into the processing chamber 8 from nozzles 23-2, 23-3, 23-4, 23-5, and 23-6 continues. As a result, the etching reaction described above by the mixed gas proceeds within the processing chamber 8. That is, deposits adhering to the inside of the processing chamber 8 are further removed. In this case as well, the etching reaction mainly proceeds in the substrate placement area EA within the processing chamber 8.

[0075] In step C, the supply of inert gas from nozzle 23-6 continues, but the supply of gas from the other nozzles 23 is stopped. Then, the APC valve 34 is opened. As a result, gas (hereinafter sometimes simply referred to as exhaust gas) containing by-products generated by the reaction of deposits with cleaning gas, unreacted cleaning gas and additive gases with deposits, and particles generated by etching is discharged from inside the processing chamber 8 to the outside of the processing chamber 8 through the exhaust pipe 32.

[0076] In step D, the APC valve 34 is closed. Then, cleaning gas is supplied into the processing chamber 8 as the first gas from nozzle 23-4. Additionally, additive gas is supplied into the processing chamber 8 as the second gas from nozzle 23-5. Furthermore, inert gas is supplied into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, and 23-7. In addition, inert gas is continuously supplied into the processing chamber 8 from nozzle 23-6.

[0077] The treatment chamber 8 once again contains both the cleaning gas and the additive gas. Similar to step A, a mixed gas is generated in the treatment chamber 8 by adding a halogen-containing active species to the cleaning gas. The thermochemical reaction caused by this mixed gas makes it possible to remove the deposits that had adhered to the inside of the treatment chamber 8.

[0078] In step E, the supply of cleaning gas from nozzle 23-4 is stopped, as is the supply of additive gas from nozzle 23-5. The supply of inert gas into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-6, and 23-7 continues. As a result, the etching reaction proceeds in the processing chamber 8, as in step B, and the deposits adhering to the inside of the processing chamber 8 are further removed.

[0079] In step F, the supply of inert gas from nozzle 23-6 continues, but the supply of gas from the other nozzles 23 is stopped. Then, the APC valve 34 is opened. As a result, the exhaust gas is discharged to the outside of the processing chamber 8 through the exhaust pipe 32, as in step C.

[0080] The processing conditions in steps A and D are as follows: Cleaning gas supply flow rate: 0.5~10 slm Additive gas supply flow rate: 0.5~10 slm Inert gas supply flow rate: 0.01 to 20 slm, preferably 0.01 to 10 slm Each gas supply time: 10 to 300 seconds, preferably 20 to 120 seconds Processing pressure: 1330~53320Pa, preferably 9000~15000Pa Examples are given.

[0081] In the first cleaning process, steps A to F described above constitute one cycle, and this cycle is performed a predetermined number of times, for example, about 5 cycles. After that, the process moves on to the second cleaning process.

[0082] Although the first cleaning step shows an example where no gas is supplied from nozzle 23-8, gas may be supplied in the same manner as from nozzle 23-6, for example.

[0083] Furthermore, in steps A and D of the first cleaning process, the additive gas as the second gas may be supplied into the processing chamber 8 simultaneously from both nozzles 23-5 and 23-7. However, in both steps A and D, supplying the second gas only from the nozzle opposite to the nozzle supplying the first gas into the processing chamber 8 is highly effective in suppressing etching damage within the processing chamber 8.

[0084] In the first cleaning step of this embodiment, nozzle 23-1, which supplies the first gas (cleaning gas in the above embodiment), which is either the cleaning gas or the additive gas, and nozzle 23-7, which supplies the second gas (additive gas in the above embodiment), which is the other of the cleaning gas and the additive gas, are located opposite each other across the central axis CA. Similarly, nozzle 23-4, which supplies the first gas, and nozzle 23-5, which supplies the second gas, are located opposite each other across the central axis CA. Therefore, by supplying the first gas and the second gas into the processing chamber 8 from separate positions in a direction perpendicular to the first direction (i.e., the horizontal direction), the gases can be diffused horizontally and then mixed to generate halogen-containing active species. In other words, the spatial concentration and partial pressure bias of halogen-containing active species that promote etching reactions can be suppressed, especially in the horizontal direction within the processing chamber 8. This allows for adjustment of the distribution of etching rates within the processing chamber 8 and suppression of localized etching biases.

[0085] (Second cleaning process) In the second cleaning process, (a) A step of supplying either a cleaning gas or an additive gas as the first gas into the processing chamber 8 from one or more first positions in the first direction, (b) A step of supplying the other of the cleaning gas or additive gas as a second gas into the processing chamber 8 from one or more second positions different from the first position in the first direction, Execute this. Specifically, in the second cleaning process, each step G to L is considered one cycle according to the timing chart shown in Figure 5, and this cycle is executed a predetermined number of times (one or more times).

[0086] In step G, the APC valve 34 is closed. Then, as the first gas supply step, cleaning gas is supplied to the processing chamber 8 as the first gas from nozzle 23-6. As the second gas supply step, additive gas is supplied to the processing chamber 8 as the second gas from second nozzle 23-7. Furthermore, inert gas is supplied to the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, and 23-5. In this embodiment, as with the first cleaning step, an example is described in which cleaning gas is used as the first gas and additive gas is used as the second gas, but it is also possible to use additive gas as the first gas and cleaning gas as the second gas.

[0087] The treatment chamber 8 is in a state where cleaning gas and additive gas are present. Inside the treatment chamber 8, halogen-containing active species are generated by the reaction of the cleaning gas and additive gas, and these are added to the cleaning gas to create a mixed gas. This mixed gas comes into contact with the sediment inside the treatment chamber 8, and through a thermochemical reaction with the sediment, it becomes possible to remove the sediment that was attached to the inside of the treatment chamber 8.

[0088] In step H, the supply of cleaning gas from nozzle 23-6 is stopped, as is the supply of additive gas from nozzle 23-7. The supply of inert gas into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, and 23-5 continues. As a result, the etching reaction described above by the mixed gas proceeds within the processing chamber 8. That is, deposits adhering to the inside of the processing chamber 8 are further removed. The etching reaction in steps G and H proceeds within the processing chamber 8 in a manner that suppresses localized bias, extending from the substrate non-placement area EB to the substrate placement area EA. In particular, by supplying cleaning gas from nozzle 23-6, the etching reaction proceeds more easily in the substrate non-placement area EB, i.e., the opening at the lower end of the manifold 5, compared to the first cleaning step. Therefore, it is possible to effectively clean the processing chamber 8 in the substrate non-placement area EB.

[0089] In step I, the gas supply from all nozzles 23 is stopped. Then, the APC valve 34 is opened. This allows the exhaust gas, after the deposit has been removed, to be discharged outside the treatment chamber 8 through the exhaust pipe 32.

[0090] In step J, the APC valve 34 is closed, similar to step G. Then, cleaning gas is supplied to the processing chamber 8 as the first gas from nozzle 23-6. Additive gas is supplied to the processing chamber 8 as the second gas from nozzle 23-7. Inert gas is supplied to the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, and 23-5. Similar to step G, the processing chamber 8 is now in a state where cleaning gas and additive gas are present, and an etching reaction occurs.

[0091] In step K, as in step H, the supply of cleaning gas from nozzle 23-6 is stopped, as is the supply of additive gas from nozzle 23-7. The supply of inert gas into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, and 23-5 continues. The etching reaction proceeds in the processing chamber 8, and deposits adhering to the inside of the processing chamber 8 are further removed. The etching reaction in steps J and K also proceeds in the processing chamber 8 with localized bias suppressed, in the range from the substrate non-placement area EB to the substrate placement area EA, as in steps G and H, and in particular, proceeds more easily in the substrate non-placement area EB compared to the first cleaning step.

[0092] In step L, as in step I, the gas supply from all nozzles 23 is stopped and the APC valve 34 is opened. The exhaust gas, after the deposit has been removed, is discharged outside the processing chamber 8 through the exhaust pipe 32.

[0093] The processing conditions in steps G and J are as follows: Cleaning gas supply flow rate: 0.5~10 slm Additive gas supply flow rate: 0.5~10 slm Inert gas supply flow rate: 0.01 to 20 slm, preferably 0.01 to 10 slm Each gas supply time: 10 to 300 seconds, preferably 20 to 120 seconds Processing pressure: 1330~53320Pa, preferably 9000~15000Pa Examples are given.

[0094] In the second cleaning process, steps G to L described above constitute one cycle, and this cycle is performed a predetermined number of times, for example, about 10 cycles.

[0095] Although the above-described second cleaning step does not include an example where gas is not supplied from nozzle 23-8, gas may be supplied in the same manner as from nozzle 23-6.

[0096] Furthermore, in the second cleaning step, the supply of the first gas from nozzle 23-6 and the supply of the second gas from nozzle 23-7 may be swapped. That is, the cleaning gas, which is the first gas, is supplied from nozzle 23-7, and the additive gas, which is the second gas, is supplied from nozzle 23-6. However, in order to promote etching in the lower part of the processing chamber 8, it is preferable to supply the cleaning gas from nozzle 23-6 and the additive gas from nozzle 23-7.

[0097] (Purge and return to atmospheric pressure)

[0098] After the first and second cleaning processes are completed, the next cleaning process will be initiated as needed.

[0099] After these cleaning steps are completed, the treatment chamber 8 is purged. Then, the atmosphere inside the treatment chamber 8 is replaced with an inert gas, and the pressure inside the treatment chamber 8 is returned to atmospheric pressure.

[0100] (Boat unloading)

[0101] The boat elevator 17 lowers the seal cap 219, opening the lower end of the manifold 5. Then, the empty boat 14 is unloaded from the lower end of the manifold 5 to the outside of the reaction tube 2 (i.e., boat unloading). Once this series of steps is completed, the substrate processing steps described above are resumed.

[0102] According to the second cleaning step of this embodiment, one or more of the following effects can be obtained.

[0103] The supply hole 24(LB) of nozzle 23-6, which supplies the first gas (cleaning gas in the above embodiment), which is either the cleaning gas or the additive gas, is located in the substrate non-placement region EB, which is the second position LB. In contrast, the supply hole 24(LA) of nozzle 23-7, which is a long nozzle that supplies the second gas (additive gas in the above embodiment), which is the other of the cleaning gas or the additive gas, is located in the substrate placement region EA, which is the first position LA. Therefore, by supplying the first gas and the second gas into the processing chamber 8 from separate positions in the first direction, each gas can be diffused in the first direction and in a direction perpendicular to the first direction (i.e., the horizontal direction) and then mixed to generate halogen-containing active species. That is, spatial concentration and partial pressure biases of halogen-containing active species that promote etching reactions can be suppressed within the processing chamber 8. This allows for adjustment of the etching rate distribution within the processing chamber 8 and suppression of localized etching biases. In particular, biases in etching amounts in the direction perpendicular to the first direction can be suppressed within the processing chamber 8.

[0104] The second position LB is located below the first position LA in the first direction, and is particularly close to the bottom end of the processing container 7. Therefore, by supplying the first gas, cleaning gas, from the second position to a position close to the bottom end of the processing container 7, the etching reaction at the bottom end of the processing container 7 can be promoted. Furthermore, if there is a temperature imbalance between the upper and lower parts of the processing chamber 8, it is possible to adjust the etching conditions and the upper and lower distribution of the etching amount to perform appropriate etching. In other words, if there are regions with different temperatures within the processing chamber 8, the amount of deposited film to be etched and the appropriate etching conditions may differ. Specifically, for example, in the substrate non-placement region EB, which tends to be a relatively low-temperature region, the etching rate will be lower. In such cases, it is possible to increase the etching rate in the low-temperature region by increasing the concentration of the first gas (especially the cleaning gas) supplied from the nozzle 23-6.

[0105] In this embodiment, an additive gas is supplied as the first gas from the first position LA, and a cleaning gas is supplied as the second gas from the second position LB. This makes it possible to promote etching in the substrate-free region EB, i.e., the opening side near the lower end of the processing container 7.

[0106] The first gas supply process and the second gas supply process are performed while the substrate support 30 is in the processing chamber 8. The presence of the substrate support 30 in the processing chamber 8 makes it possible to perform the cleaning process, including the substrate support 30.

[0107] The first position LA is located within the processing chamber 8 where the boat 14 is installed, and the second position LB is located where the insulating structure 15 is installed. In other words, in the second cleaning step, it is possible to promote the etching reaction in the region where the insulating structure 15 is located, which is below the region where the boat 14 is located within the processing chamber 8.

[0108] The first gas supply process and the second gas supply process are executed in a timely manner. Therefore, compared to the case where the first and second gas supply processes are executed without time overlap, it is possible to mix a sufficient amount of the first and second gases in a shorter time. Furthermore, even if the first and second gas supply processes partially overlap, it is possible to effectively mix the first and second gases during the overlapping time period, not just when they are perfectly timed.

[0109] If the time of the first gas supply process and the time of the second gas supply process partially overlap, the order in which the first and second gas supply processes occur does not matter. For example, the start time of the first gas supply process and the start time of the second gas supply process can be earlier. Similarly, the end time of the first gas supply process and the end time of the second gas supply process can be earlier.

[0110] The first gas supply process and the second gas supply process are performed with the APC valve 34 closed, that is, with exhaust from the processing chamber 8 stopped. Since the first and second gases supplied to the processing chamber 8 remain in the processing chamber 8, it is possible to effectively utilize the supplied first and second gases to promote mixing.

[0111] After the first and second gas supply processes, a cycle of exhausting with the supply of the first and second gases stopped is performed one or more times. In other words, etching of the processing chamber 8 and exhausting after etching are performed repeatedly, so that gases with reduced reactivity after the etching reaction and by-products generated by the etching reaction are discharged from the processing chamber 8 in each cycle, thereby promoting the cleaning process of the processing chamber 8.

[0112] At least one location at the first position LA and at least one location at the second position LB are opposite each other across the central axis CA. By supplying the first gas at the first position LA and the second gas at the second position LB, which are supplied with the first gas, to the processing chamber 8 with the central axis CA in opposition, it is possible to react the first gas and the second gas in such a way that the bias is reduced, especially in the direction perpendicular to the first direction within the processing chamber 8.

[0113] Viewed in the first direction, nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7 are located at different positions in the circumferential direction of the processing chamber 8. The first position, which is the position of the supply hole 24(LA) formed in nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-7, includes the 1-1 position LA1 and the 1-2 position LA2, which is located at a different position from the 1-1 position LA1 in the circumferential direction of the processing chamber 8. Here, multiple cycles in the second cleaning process may alternately execute cycles in which the first gas is supplied from the 1-1 position LA1 and the supply of the first gas from the 1-2 position is stopped, and cycles in which the first gas is supplied from the 1-2 position LA2 and the supply of the first gas from the 1-1 LA1 is stopped. Since the first gas is supplied alternately at position 1-1 LA1 and position 1-2 LA2, it is possible to suppress the uneven distribution of the first gas within the processing chamber 8.

[0114] The first and second cleaning steps described above may be carried out as shown in the following modified examples. The same effects as those of the above-described embodiments can be obtained in the following modified examples as well.

[0115] (Variation of the first cleaning process) The timing chart in Figure 6 shows a modified version of the first cleaning process. In this modified version of the first cleaning process, nozzle 23-8 is used in addition to nozzles 23-1 to 23-7. This modified version is the same as the first cleaning process in the embodiment described above, except for the points not specifically mentioned.

[0116] In step A, the APC valve 34 is closed. Then, cleaning gas is supplied into the processing chamber 8 as the first gas from nozzle 23-1. Additionally, additive gas is supplied into the processing chamber 8 as the second gas from nozzle 23-8. Furthermore, inert gas is supplied into the processing chamber 8 from nozzles 23-2, 23-3, 23-4, 23-5, 23-6, and 23-7. In this step, deposits in the processing chamber 8 are removed, similar to step A of the first cleaning process in the embodiment described above. In this modified example, additive gas can be used as the first gas and cleaning gas as the second gas.

[0117] In step B, the supply of cleaning gas from nozzle 23-1 is stopped, as is the supply of additive gas from nozzles 23-78 and others. The supply of inert gas into the processing chamber 8 from nozzles 23-2, 23-3, 23-4, 23-5, 23-6, and 23-7 continues. As a result, the etching reaction described above proceeds in the processing chamber 8, similar to step A.

[0118] In step C, the supply of inert gas from nozzles 23-2, 23-3, 23-4, 23-5, 23-6, and 23-7 is stopped. In other words, in step C, the supply of gas from all nozzles 23 is stopped. Then, the APC valve 34 is opened. This allows the exhaust gas, after the deposit has been removed, to be discharged outside the processing chamber 8 through the exhaust pipe 32.

[0119] In step D, the APC valve 34 is closed. Then, cleaning gas is supplied into the processing chamber 8 as the first gas from nozzle 23-4. Additionally, additive gas is supplied into the processing chamber 8 as the second gas from nozzle 23-6. Furthermore, inert gas is supplied into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-5, 23-7, and 23-8. In this step, deposits in the processing chamber 8 are further removed, similar to step A of this modified example.

[0120] In step E, the supply of cleaning gas from nozzle 23-4 is stopped, as is the supply of additive gas from nozzle 23-6. The supply of inert gas into the treatment chamber 8 from nozzles 23-1, 23-2, 23-3, 23-5, 23-7, and 23-8 continues. In this step, as in step B of this modified example, the deposits in the treatment chamber 8 are further removed.

[0121] In step F, the supply of inert gas from nozzles 23-1, 23-2, 23-3, 23-5, 23-7, and 23-8 is stopped. In other words, in step F, the supply of gas from all nozzles 23 is stopped. Then, the APC valve 34 is opened. This allows the waste gas, after the deposit has been removed, to be discharged outside the processing chamber 8 through the exhaust pipe 32.

[0122] In this modified example, the supply holes 24(LA) of nozzles 23-1 and 23-4, which supply cleaning gas, are located at the first position LA, in the substrate placement area EA. In contrast, the supply holes 24(LB) of nozzles 23-6 and 23-8, which supply additive gas, are located at the second position LB, in the substrate non-placement area EB. Furthermore, the pairs of nozzles 23-1 and 23-8, and nozzles 23-4 and 23-6, are located opposite each other across the central axis CA. In other words, in this modified example, the distance between the supply position of the first gas (cleaning gas) and the supply position of the second gas (additive gas) is even greater than in the first cleaning step of the embodiment described above. Therefore, the spatial concentration and partial pressure bias of halogen-containing active species generated by the etching reaction can be further suppressed within the processing chamber 8, and the localized etching amount bias within the processing chamber 8 can be further suppressed.

[0123] In this modified example, the supply hole 24(LA) is in the first position LA, and the process includes supplying a cleaning gas as the first gas into the processing chamber 8 from a plurality of long nozzles located at different positions in the inner circumferential direction of the processing chamber 8, and supplying an additive gas as the second gas into the processing chamber 8 from a plurality of short nozzles located at different positions in the inner circumferential direction of the supply hole 24(LB) is in the second position. This cycle is performed a predetermined number of times. Since the process includes supplying the first gas alternately into the processing chamber 8 from a plurality of long nozzles, uneven distribution of the first gas within the processing chamber 8 can be suppressed. Furthermore, since the process includes supplying the second gas alternately into the processing chamber 8 from a plurality of short nozzles, uneven distribution of the second gas within the processing chamber 8 can also be suppressed.

[0124] In a modified version of the first cleaning process, the second gas may be supplied simultaneously from nozzles 23-6 and 23-8. In the example described above, the additive gas is supplied from both nozzles 23-6 and 23-8 in steps A and D. However, if the supply of the additive gas from nozzle 23-6 and the supply of the additive gas from nozzle 23-8 are performed in different steps, it is possible to create an intentional concentration distribution of the active gas within the processing chamber 8 and adjust the distribution of the etching amount.

[0125] Furthermore, in a modified version of the first cleaning step, for example, the cleaning gas may be supplied from nozzle 23-5 instead of nozzle 23-1, or from nozzle 23-7 instead of nozzle 23-4. However, having a greater distance between the supply location of the cleaning gas as the first gas and the supply location of the additive gas as the second gas can suppress localized damage and unevenness of etching within the processing chamber 8. From this viewpoint, in step A, it is preferable to supply the cleaning gas from nozzle R1, which is further from nozzle 23-8, rather than from nozzle 23-5, which is closer to nozzle 23-8. Similarly, in step D, it is preferable to supply the cleaning gas from nozzle 23-4, which passes through nozzle 23-6, rather than from nozzle 23-7, which is closer to nozzle 23-6.

[0126] (Variation of the second cleaning process) The second cleaning step described above may also be performed as shown in the modified version (modified version of the second cleaning step) in the timing chart of Figure 7. In addition to nozzles 23-1 to 23-7, nozzle 23-8 is also used in this modified version of the second cleaning step. This modified version is the same as the second cleaning step in the above embodiment in all respects except those specifically mentioned.

[0127] In step G, the APC valve 34 is closed. Then, cleaning gas is supplied into the processing chamber 8 as the first gas from nozzle 23-8. Additionally, additive gas is supplied into the processing chamber 8 as the second gas from nozzle 23-55. Furthermore, inert gas is supplied into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, 23-6, and 23-7. In this step, deposits in the processing chamber 8 are removed, similar to step G of the second cleaning process in the embodiment described above.

[0128] In step H, the supply of cleaning gas from nozzle 23-8 is stopped, as is the supply of additive gas from nozzle 23-5. The supply of inert gas into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, 23-6, and 23-7 continues. In this step, deposits in the processing chamber 8 are removed, similar to step H of the second cleaning process in the embodiment described above.

[0129] In step I, the gas supply from all nozzles 23 is stopped. Then, the APC valve 34 is opened. This allows the exhaust gas, after the deposit has been removed, to be discharged outside the treatment chamber 8 through the exhaust pipe 32.

[0130] In step J, the APC valve 34 is closed. Then, cleaning gas is supplied into the processing chamber 8 as the first gas from nozzle 23-6. Additive gas is supplied into the processing chamber 8 as the second gas from nozzle 23-7. Inert gas is supplied into the processing chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-8. Similar to step G of this modified example, the processing chamber 8 is now in a state where cleaning gas and additive gas are present, and an etching reaction occurs.

[0131] In step K, as in step H, the supply of cleaning gas from nozzle 23-6 is stopped, as is the supply of additive gas from nozzle 23-7. The supply of inert gas into the treatment chamber 8 from nozzles 23-1, 23-2, 23-3, 23-4, 23-5, and 23-8 continues. In this step, the deposits in the treatment chamber 8 are removed, as in step H of this modified example.

[0132] In step L, as in step I, the gas supply from all nozzles 23 is stopped and the APC valve 34 is opened. This allows the exhaust gas, after the deposit has been removed, to be discharged outside the treatment chamber 8 through the exhaust pipe 32.

[0133] In this modified example, the distance between the supply position of the first gas (cleaning gas) and the supply position of the second gas (additive gas) in each cycle is further increased compared to the second cleaning step of the embodiment described above. Therefore, the spatial concentration and partial pressure bias of halogen-containing active species generated by the etching reaction can be further suppressed within the processing chamber 8, and the localized bias in the amount of etching within the processing chamber 8 can be further suppressed.

[0134] In a modified version of the second cleaning process, the second gas may be supplied simultaneously from nozzles 23-6 and 23-8. In the example described above, the cleaning gas is supplied from both nozzles 23-6 and 23-8 in steps G and J. However, if the supply of cleaning gas from nozzle 23-6 and the supply of cleaning gas from nozzle 23-8 are performed in different steps, it is possible to create an intentional concentration distribution of the active gas within the processing chamber 8 and adjust the distribution of the etching amount.

[0135] Furthermore, in a modified version of the second cleaning process, the additive gas may be supplied from, for example, nozzle 23-1 instead of nozzle 23-5, or from, for example, nozzle 23-4 instead of nozzle 23-7.

[0136] In the modified version of the first cleaning process and the modified version of the second cleaning process, nozzle 23-8 is used in addition to nozzle 23-6. The second-first position LB1, which is the position of the supply hole 24(LB) formed in nozzle 23-6, and the second-second position LB2, which is the position of the supply hole 24(LB) formed in nozzle 23-8, are at different positions in the circumferential direction of the processing chamber 8. Therefore, it is possible to distribute and supply the second gas into the processing chamber 8 from different positions in the circumferential direction of the processing chamber 8.

[0137] In the modified version of the first cleaning process and the modified version of the second cleaning process, the flow rate of the second gas supplied from position 2-1 LB1 and the flow rate of the second gas supplied from position 2-2 LB2 may be the same or different. By making the flow rates of the second gas different at position 2-1 LB1 and position 2-2 LB2, it is possible to adjust the distribution of the second gas within the processing chamber 8.

[0138] <Other aspects of this disclosure>

[0139] The embodiments of this disclosure have been described in detail above. However, this disclosure is not limited to the embodiments described above, and can be modified in various ways without departing from its essence. The shape of the nozzle 23 can be a so-called straight nozzle (also called an I-shaped nozzle), but is not limited thereto, and this disclosure can also be applied to, for example, a U-turn nozzle, a Y-shaped nozzle, an N-shaped nozzle, or a W-shaped nozzle.

[0140] The processing apparatus of this embodiment can be applied not only to semiconductor manufacturing equipment but also to equipment that processes glass substrates, such as LCD equipment. Furthermore, the film formation process includes, for example, processes for forming CVD, PVD, oxide films, nitride films, or both, and processes for forming metal-containing films. In addition, processes such as annealing, oxidation, nitriding, and diffusion may also be used.

[0141] The recipe used in the processing device of this embodiment is not limited to newly created recipes; for example, it may be prepared by modifying an existing recipe already installed in the substrate processing device 1. When modifying a recipe, the modified recipe may be installed in the substrate processing device 1 via a telecommunications line or a recording medium on which the recipe is stored. Alternatively, an existing recipe already installed in the substrate processing device 1 may be directly modified by operating the input / output device 37 provided in the existing substrate processing device 1.

[0142] The above-described embodiments describe an example of forming a film using a batch-type substrate processing apparatus 1 that processes multiple substrates at once. This disclosure is not limited to the above-described embodiments and can be suitably applied, for example, to forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at once. Furthermore, the above-described embodiments describe an example of forming a film using a substrate processing apparatus 1 having a hot-wall type processing furnace. This disclosure is not limited to the above-described embodiments and can be suitably applied to forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0143] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above in the embodiments and modifications, and the same effects as described above can be obtained.

[0144] The above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions in the above-described embodiments and modifications. [Explanation of Symbols]

[0145] 8... Processing chamber, 23-1~23-8... Nozzles.

Claims

1. (a) A step of supplying either a cleaning gas or an additive gas that reacts with the cleaning gas as a first gas into a processing chamber configured to accommodate a substrate along a plane perpendicular to the first direction, from one or more first positions in the first direction, (b) A step of supplying the cleaning gas or the other of the additive gas that reacts with the cleaning gas as a second gas into the processing chamber from one or more second positions different from the first position in the first direction, A cleaning method having

2. The processing chamber comprises a processing container having an opening at its lower end in the first direction, and a lid capable of closing the opening. The cleaning method according to claim 1, wherein the second position is closer to the lower end in the first direction than the first position.

3. The processing chamber is provided with a substrate placement area that is provided along the first direction and where the substrate is placed, and a non-substrate placement area in which the substrate is not placed in the first direction. The first position is a position in the first direction where the substrate placement area is provided, The cleaning method according to claim 1 or claim 2, wherein the second position is a position in the first direction where the substrate non-placement region is provided.

4. The processing chamber is configured to include a substrate support capable of supporting the substrate within the processing chamber, (a) and (b) are the cleaning method according to claim 1, wherein the substrate support is located inside the processing chamber.

5. The substrate support is configured to include a substrate support portion that supports the substrate and a heat insulating portion that is located at a different position from the substrate support portion in the first direction. The first position is the position in the first direction where the substrate support portion is provided. The cleaning method according to claim 4, wherein the second position is the position in the first direction where the heat insulating portion is provided.

6. A first nozzle is provided in the processing chamber, which extends in the first direction and has one or more first supply holes. The cleaning method according to claim 1, wherein the first position is set as the position of one or more first supply holes.

7. The cleaning method according to claim 6, wherein a plurality of the first supply holes are provided in the first nozzle along the first direction.

8. The cleaning method according to claim 1, wherein (a) and (b) are performed such that they overlap in time at least partially.

9. (a) and (b) are the cleaning method according to claim 1, which is performed with the exhaust from the processing chamber stopped.

10. (a) and (b) are performed such that the first gas and the second gas are mixed in the processing chamber, according to claim 1.

11. The cleaning method according to claim 3, wherein the additive gas is supplied from the first position and the cleaning gas is supplied from the second position.

12. The cleaning method according to claim 1, wherein a cleaning step is performed multiple times, comprising (a), (b), and an exhaust step of exhausting gas from the processing chamber after (a) and (b) with the supply of the first gas and the second gas stopped.

13. The cleaning method according to claim 1, wherein at least one of the first positions and at least one of the second positions are located opposite each other across the central axis of the processing chamber that extends in the first direction.

14. The cleaning method according to claim 1, wherein the second position includes a second-first position and a second-second position located at different positions in the circumferential direction of the processing chamber.

15. Perform multiple cleaning cycles including (a) and (b), The cleaning method according to claim 14, comprising: a cleaning cycle in which the second gas is supplied from the 2-1 position and the supply of the second gas is stopped from the 2-2 position; and a cleaning cycle in which the second gas is supplied from the 2-2 position and the supply of the second gas is stopped from the 2-1 position.

16. The first position includes a first-1 position and a first-2 position located at different positions in the circumferential direction of the processing chamber, The cleaning method according to claim 15, comprising: a cleaning cycle in which the first gas is supplied from the 1-1 position and the supply of the first gas is stopped from the 1-2 position; and a cleaning cycle in which the first gas is supplied from the 1-2 position and the supply of the first gas is stopped from the 1-1 position.

17. The 1-1 position and the 2-1 position are located opposite each other, straddling the central axis of the processing chamber which extends in the first direction. The cleaning method according to claim 16, wherein the first-second position and the second-second position are located opposite each other across the central axis.

18. (a) A step of supplying either a cleaning gas or an additive gas that reacts with the cleaning gas as a first gas into a processing chamber configured to accommodate a substrate along a plane perpendicular to the first direction, from one or more first positions in the first direction, (b) A step of supplying the cleaning gas or the other of the additive gas that reacts with the cleaning gas as a second gas into the processing chamber from one or more second positions different from the first position in the first direction, A method for manufacturing a semiconductor device having [a certain feature].

19. (a) A procedure in which a cleaning gas or an additive gas that reacts with the cleaning gas is supplied as a first gas from one or more first positions in the first direction into a processing chamber configured to accommodate a substrate along a plane perpendicular to the first direction, (b) A procedure for supplying the cleaning gas or the other of the additive gas that reacts with the cleaning gas as a second gas into the processing chamber from one or more second positions different from the first position in the first direction, A program that causes a circuit board processing unit to execute commands via a computer.

20. A processing chamber configured to accommodate a substrate along a plane perpendicular to the first direction, A first gas supply system configured to supply either a cleaning gas or an additive gas that reacts with the cleaning gas as a first gas into the processing chamber from a first supply hole provided at one or more first positions in the first direction, A second gas supply system is configured to supply the cleaning gas or the other of an additive gas that reacts with the cleaning gas as a second gas into the processing chamber from a second supply hole provided at one or more second positions different from the first position in the first direction, A control unit is configured to control the first gas supply system and the second gas supply system so as to supply the first gas and the second gas to the processing chamber, A substrate processing apparatus having

Images