Semiconductor processing tool with RF transparent dome structure and dynamic cooling system & method for manufacturing RF transparent dome structure

Abstract

The present disclosure provides improvements to semiconductor processing tools featuring a radio frequency transparent dome structure, which may be used to generate a plasma that may then be flowed over a semiconductor wafer. Such improvements may include a cooling system configured to cool such a dome structure. The cooling system may be switchable between at least two different cooling modes, where in one cooling mode the cooling system cools the dome structure at a first rate and in another cooling mode the cooling system cools the dome structure at a second rate that is slower than the first rate.

Description

[Background technology]

[0001] Related Applications A PCT application has been filed contemporaneously herewith as a part of the present application. Each application identified in the contemporaneously filed PCT application to which this application claims benefit or priority is incorporated herein by reference in its entirety for all purposes. In some semiconductor processing tools, one or more process stations may be provided that may be used to accommodate semiconductor wafers during wafer processing operations. Such process stations may, for example, include some form of wafer support that may be used to support the semiconductor wafers during processing operations. In many such semiconductor processing tools, one or more process gases may be distributed across such semiconductor wafers via a showerhead or other gas distribution system.

[0002] In some such semiconductor processing tools, the gas distribution system may include a faceplate overlying a dome structure that is transparent to radio frequency (RF) energy. One or more RF coils may extend around and be positioned proximate to the dome structure. The RF coils may be used to direct RF energy into a volume enclosed by the dome structure and the faceplate. When such energy is directed into the volume while one or more process gases are present within the volume, such energy may be used to strike a plasma within the volume, which may then flow out of the volume and through the faceplate onto the wafer (which may be positioned below the faceplate).

[0003] The present disclosure provides various improvements to semiconductor processing tools equipped with such dome structures. Summary of the Invention

[0004] The details of one or more embodiments of the subject matter described herein are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the description, drawings, and claims.

[0005] In some embodiments, an apparatus may be provided, which may include one or more process stations. Each process station may include an enclosure defining a cooling volume and a dome structure, the dome structure including a radio wave transparent material, having an inlet and an outlet opposite the inlet, and disposed within the cooling volume of the enclosure for the process station. Each station may also include one or more radio frequency (RF) coils extending around the dome structure of the process station, a faceplate disposed below the dome structure of the process station and proximate the outlet of the dome structure of the process station, and a wafer support disposed to interpose the faceplate of the process station between the wafer support of the process station and the dome structure of the process station. The apparatus may also include a cleaning plasma distribution system configured to facilitate direction of a cleaning plasma onto the one or more wafer supports of the one or more process stations and an RF power system configured to be operable in different power modes, the different power modes including a first power mode and a second power mode. The RF power system may also provide at least a first level of RF power to one or more RF coils of one or more process stations in a first power mode and a second level of RF power to one or more RF coils of one or more process stations in a second power mode. The second level of RF power may be less than the first level of RF power. The apparatus may further include a cooling system configured to operate in different cooling modes, the different cooling modes including a first cooling mode and a second cooling mode. The cooling system may cool one or more dome structures of one or more process stations at a first rate using a cooling fluid in the first cooling mode and may cool one or more dome structures of one or more process stations at a second rate slower than the first rate using a cooling fluid in the second cooling mode.The apparatus may also include a controller configured to enable the apparatus to operate in different operating modes, the different operating modes including at least a first operating mode and a second operating mode, and when the controller enables the apparatus to operate in the first operating mode, the controller may configure the RF power system to operate in the first power mode and the cooling system to operate in the first cooling mode, and when the controller enables the apparatus to operate in the second operating mode, the controller may configure the cleaning plasma delivery system to direct cleaning plasma onto one or more wafer supports of the one or more process stations and the cooling system to operate in the second cooling mode.

[0006] In some embodiments, the apparatus may further include a flow conditioning system configured to operate at different flow states, the different flow states including a first flow state and a second flow state. The cooling system may include an exhaust system interface and one or more conduits, each conduit fluidly interposed between the exhaust system interface and a cooling volume defined by a corresponding one of the enclosures of the one or more process stations. The exhaust system interface may be configured to connect to a facility exhaust system. The flow conditioning system may allow up to a first level of fluid flow from the one or more cooling volumes defined by the one or more enclosures of the one or more process stations and through the exhaust system interface via the one or more conduits in the first flow state, and may allow up to a second level of fluid flow from the one or more cooling volumes defined by the one or more enclosures of the one or more process stations and through the exhaust system interface via the one or more conduits in the second flow state. The second level of fluid flow may be less than the first level of fluid flow. The controller in such an apparatus may be configured to place the flow regulation system in a first flow state when the apparatus is in a first mode of operation, and may be configured to place the flow regulation system in a second flow state when the apparatus is in a second mode of operation.

[0007] In some embodiments, the second level of fluid flow may be 10% or less of the first level of fluid flow, hi some further embodiments, the second level of fluid flow may be a zero level of fluid flow.

[0008] In some embodiments, the flow regulation system may include one or more actuators and one or more movable elements. The one or more actuators may be configured to move the one or more movable elements between at least a first position and a second position upon actuation. The one or more movable elements may provide a first level of flow resistance to fluid flow through the one or more conduits when in the first position. The one or more movable elements may provide a second level of flow resistance to fluid flow through the one or more conduits when in the second position. The second level of flow resistance may be higher than the first level of flow resistance. The controller may control the one or more actuators to place the one or more movable elements in the first position when placing the device in a first operating mode, and may control the one or more actuators to place the one or more movable elements in the second position when placing the device in a second operating mode.

[0009] In some embodiments, each movable element of the one or more movable elements may be configured to at least partially block a flow path through at least one of the one or more conduits when in the second position.

[0010] In some embodiments, each movable element of the one or more movable elements may be configured to completely block a flow path through at least one of the one or more conduits when in the second position.

[0011] In some embodiments, the flow regulation system may include one or more outlets, each outlet leading to an alternative flow path separate from the one or more flow paths through the one or more conduits. In such embodiments, each movable element of the one or more movable elements may be configured to at least partially block at least one of the alternative flow paths when in a first position and to block the at least one of the alternative flow paths to a relatively lesser extent when in a second position.

[0012] In some embodiments, the flow regulation system may include one or more outlets, each outlet leading to an alternative flow path separate from the one or more flow paths through the one or more conduits, and each movable element of the one or more movable elements configured to completely block at least one of the alternative flow paths when in a first position and to unblock the at least one of the alternative flow paths when in a second position.

[0013] In some embodiments, one or more outlets may be fluidly interposed between the exhaust system interface and the ambient environment, and one or more alternative flow paths may lead to the ambient environment.

[0014] In some embodiments, each movable element may be a shutter.

[0015] In some embodiments, the flow conditioning system may be located at the exhaust system interface.

[0016] In some embodiments, the one or more process stations may include multiple process stations. The exhaust system interface may include a housing having one or more walls with one or more first openings and one or more second openings, each first opening connected to one of the conduits, and each second opening functioning as one of the one or more outlets or as a single outlet. The one or more movable elements may include a movable element that is a shutter, sized to block all of the one or more second openings but not any of the one or more first openings when in a first position, and to block all of the one or more first openings but not any of the one or more second openings when in a second position.

[0017] In some embodiments, each enclosure may have one or more first holes and one or more first fans. Each first fan may be located proximate to one of the first holes. The controller may be configured to operate the one or more first fans in each enclosure at a first fan speed when the device is in a first operating mode, and to operate the one or more first fans in each enclosure at a second fan speed when the device is in a second operating mode. The second fan speed may be slower than the first fan speed.

[0018] In some embodiments, the second fan speed may be less than or equal to 10% of the first fan speed. In some further embodiments, the second fan speed may be zero.

[0019] In some embodiments, each enclosure may have one or more first holes, one or more first fans, and one or more fan shutters. Each first fan may be positioned proximate one of the first holes, and each fan shutter may be configured to be movable between a first configuration and a second configuration to adjust a volumetric flow rate of cooling fluid into the cooling volume of the enclosure of which the fan shutter is a part. Each fan shutter may allow up to a first level of volumetric flow rate of cooling fluid in the first configuration and up to a second level of volumetric flow rate of cooling fluid in the second configuration, where the first level of volumetric flow rate may be greater than the second level of volumetric flow rate. The controller may be configured to place the one or more fan shutters in the first configuration when the device is in the first mode of operation, and may be further configured to place the one or more fan shutters in the second configuration when the device is in the second mode of operation.

[0020] In some embodiments, the second level of volumetric flow rate may be 10% or less of the first level of volumetric flow rate. In some further embodiments, the second level of volumetric flow rate may be zero.

[0021] In some embodiments, each enclosure may have one or more inlet / outlet holes and one or more reversible fans. Each reversible fan may be disposed proximate one of the inlet / outlet holes and configured to direct cooling fluid in a first direction through the proximate inlet / outlet hole when operated in a first direction mode and to direct cooling fluid in a direction opposite to the first direction through the proximate inlet / outlet hole when operated in a second direction mode. The controller may be configured to operate the one or more reversible fans in the first direction mode when the device is in the first mode of operation, and the controller may be configured to operate the one or more reversible fans in the second direction mode when the device is in the second mode of operation.

[0022] In some embodiments, the cooling system may include one or more heaters configured to be operable in different heating states, the different heating states including a first heating state and a second heating state. Each heater may be associated with one of the one or more process stations and configured to deliver a first amount of heating power to a dome structure of the process station when in the first heating state and a second amount of heating power to the dome structure of the process station when in the second heating state. The first amount of heating power may be less than the second amount of heating power. The controller is configured to place the one or more heaters in the first heating state when the cooling system is in the first cooling mode and in the second heating state when the cooling system is in the second cooling mode.

[0023] In some embodiments, the cooling system may include one or more heaters configured to be operable in different heating states, the different heating states including a first heating state and a second heating state. Each heater may be associated with one of the one or more process stations and configured to deliver a first amount of heating power to the cooling fluid before the cooling fluid is flowed through the cooling volume of the process station when in the first heating state and to deliver a second amount of heating power to the cooling fluid before the cooling fluid is flowed through the cooling volume of the process station when in the second heating state. The first amount of heating power may be less than the second amount of heating power, and the controller may be configured to place the one or more heaters in the first heating state when the cooling system is in the first cooling mode and in the second heating state when the cooling system is in the second cooling mode.

[0024] In some embodiments, the first amount of heating power may be less than or equal to 10% of the second amount of heating power. In some further embodiments, the first amount of heating power may be zero.

[0025] In some embodiments, the cooling fluid may be air. In some further such embodiments, the source of the cooling fluid may be ambient air.

[0026] In some embodiments, the second level of RF power may be a power level of zero. In some embodiments, the second speed may be a speed of zero.

[0027] In some embodiments, an apparatus may be provided, the apparatus including a dome structure having a flange portion extending radially outward from a sidewall of the dome structure, the dome structure may comprise one or more silicon oxide materials, the flange portion may have a top surface and a bottom surface opposite the top surface, a majority of the dome structure may have a first transmittance to UV light, and at least the top and bottom surfaces may have a second transmittance to UV light that is lower than the first transmittance to UV light.

[0028] In some embodiments, the flange portion may include a sub-portion including a first silicon oxide material having a first transmittance to UV light, the top and bottom of the sub-portion may be coated with a second silicon oxide material having a second transmittance to UV light, and the second silicon oxide material may provide a top surface and a bottom surface.

[0029] In some embodiments, the second silicon oxide material may be optically opaque to UV light.

[0030] In some embodiments, the second silicon oxide material may have microbubbles dispersed therein.

[0031] In some embodiments, the second silicon oxide material may be provided by a thin annular ring comprising the second silicon oxide material fused to the top and bottom of the sub-portion.

[0032] In some embodiments, the majority of the dome structure, including the sidewall, may comprise a first silicon oxide material having a first transmittance to UV light, the flange portion may comprise a second silicon oxide material having a second transmittance to UV light, and the flange portion is a separate component fused to the sidewall.

[0033] In some embodiments, the device may further include a faceplate, a collar, a first seal, and a second seal, wherein the first seal may be compressed between the faceplate and a bottom surface of the flange portion, and the second seal may be compressed between the collar and a top surface of the flange portion.

[0034] In some embodiments, the faceplate may have a plurality of gas distribution ports extending therethrough.

[0035] In some embodiments, the first seal and the second seal may be rubber seals.

[0036] In some embodiments, the collar may be a multi-piece collar that includes multiple segments that surround the dome structure adjacent the flange portion.

[0037] In some embodiments, the faceplate may include one or more internal cooling passages proximate to the first seal.

[0038] In some embodiments, the one or more interior cooling passages may each be arranged to follow an arcuate or circular path within the faceplate.

[0039] In some embodiments, the bottom surface of the flange portion may provide the lowermost surface of the dome structure.

[0040] In some embodiments, a method may be provided that includes fabricating a silicon oxide dome structure having an inlet and an outlet opposite the inlet, and etching at least an interior surface of the dome structure to remove at least a first amount of silicon oxide material prior to installing the dome structure in a semiconductor processing tool.

[0041] In some such embodiments, the first amount may be 0.0003".

[0042] In some such embodiments, the first amount may be 0.0005".

[0043] In some such embodiments, the first amount may be 0.0007".

[0044] In some such embodiments, the first amount may be 0.0009".

[0045] In some such embodiments, the first amount may be 0.001".

[0046] In some such implementations, the method may further include subjecting at least the interior surface of the dome structure to a flame-polishing operation prior to etching at least the interior surface of the dome structure.

[0047] In some such embodiments, etching may be performed by exposing at least the interior surface of the dome structure to a gas containing one or both of atomic fluorine and hydrogen fluoride.

[0048] In some such embodiments, etching may be performed by exposing at least the interior surface of the dome structure to a liquid containing hydrogen fluoride. [Brief explanation of the drawings]

[0049] In the discussion that follows, reference is made to the following drawings, which are not intended to be limiting in scope but are provided merely to facilitate the discussion that follows:

[0050] [Figure 1] FIG. 1 depicts a schematic diagram of an example of a device having a dome structure.

[0051] [Figure 2] FIG. 2 depicts a schematic diagram of a variation of the example device of FIG.

[0052] [Figure 3] FIG. 3 depicts a schematic diagram of another variation of the example device of FIG.

[0053] [Figure 4] FIG. 4 depicts a schematic diagram of a further variation of the example device of FIG.

[0054] [Figure 5] FIG. 5 depicts a schematic diagram of an additional variation of the example device of FIG.

[0055] [Figure 6] FIG. 6 depicts a schematic diagram of yet another variation of the example device of FIG.

[0056] [Figure 7] FIG. 7 depicts a detailed view of rectangular area 7 of FIG.

[0057] [Figure 8] FIG. 8 depicts a top view of a multi-segment collar that secures the dome structure.

[0058] [Figure 9] FIG. 9 depicts a top view of a collar that is a continuous ring and has a single internal cooling passage.

[0059] [Figure 10] FIG. 10 depicts another variation with the flange portion being a separate piece that is joined or fused to the rest of the dome structure.

[0060] [Figure 11] FIG. 11 illustrates an example of a faceplate with cooling passage(s).

[0061] [Figure 12] FIG. 12 depicts various stages in the manufacturing process for a dome structure according to the present disclosure. [Figure 13] FIG. 13 depicts various stages in the manufacturing process for a dome structure according to the present disclosure. [Figure 14] FIG. 14 depicts various stages in the manufacturing process for a dome structure according to the present disclosure. [Figure 15] FIG. 15 depicts various stages in the manufacturing process for a dome structure according to the present disclosure. [Figure 16] FIG. 16 depicts various stages in the manufacturing process for a dome structure according to the present disclosure.

[0062] [Figure 17] FIG. 17 depicts a flow diagram of an example manufacturing process for forming a dome structure according to the present disclosure.

[0063] The foregoing figures are provided to facilitate understanding of the concepts discussed in this disclosure and are intended to illustrate some embodiments within the scope of this disclosure, but are not intended to be limiting; embodiments consistent with this disclosure and not depicted in the drawings are also deemed to be within the scope of this disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0064] As noted above, the present disclosure provides improvements to semiconductor processing tools featuring RF transparent dome structures, which may be used to generate plasma, which may then be flowed over a semiconductor wafer.

[0065] FIG. 1 depicts a diagram of an example of an apparatus, e.g., a semiconductor processing system, having an RF-transparent dome structure. As seen in FIG. 1, the apparatus 100 is depicted and includes a chamber 102 that serves to isolate a processing volume 104 from a surrounding ambient environment 106. The chamber 102 may be configured to support wafer processing operations on one or more semiconductor wafers 114 (sometimes simply referred to herein as "wafers"), which may be supported within the chamber 102 on corresponding wafer supports 112. Generally speaking, the apparatus 100 may include one or more process stations 110, each of which may support a wafer 114 during wafer processing operations.

[0066] Some semiconductor processing tools may have a single process station, i.e., may be configured to process only one wafer 114 at a time, while other tools, such as the apparatus 100, may have multiple process stations 110. In some implementations with multiple process stations, such as the one shown, the process stations 110 may be configured so that the wafer 114 resides within a contiguous interior volume of the chamber 102, i.e., the wafer 114 typically shares a common pressure environment. However, in other implementations, a semiconductor processing tool with multiple process stations 110 may have multiple chambers 102, which may be isolated from one another, e.g., via slit valves or other valve / door mechanisms, and each such chamber 102 has one or more process stations 110 associated therewith. In this example, the apparatus 100 is a four-station implementation, with the four process stations 110 arranged in a circular array. The wafer 114 may be transferred between the process stations 110, e.g., using an indexer or other system (not shown).

[0067] In any event, each process station 110 of the apparatus 100 may include a wafer support 112 configured to support one of the wafers 114 thereon. The wafer support 112 may be any structure configured to provide support for the wafer 114 during wafer processing operations. In some examples, the wafer support 112 may include a vacuum chuck or an electrostatic chuck, which may be used to secure the wafer 114 in place during wafer processing operations. The wafer support 112 may also include or act as an electrode, in some embodiments, for the purpose of providing RF power to gases that may be present above the wafer 114. The wafer support 112 may optionally include a heating and / or cooling system, a purge gas distribution system that distributes inert (or chemically unreactive) species of gas to the backside of the wafer 114, and / or other features that may facilitate wafer processing operations.

[0068] Each of the process stations 110 may also include a gas distribution system disposed above the wafer support 112. The gas distribution system may include a dome structure 120 and a faceplate 116, which may include one or more sets of outlet gas distribution ports 118 on its bottom surface. The dome structure 120 may be made from an insulator such as an RF-transparent material, e.g., quartz (silicon oxide), aluminum oxide, or aluminum nitride, and may feature an inlet 122 and an outlet 124. For clarity, it will be understood that an RF-transparent material is a substance that has a dielectric loss tangent of less than 0.001 at room temperature. The inlet 122 of the dome structure 120 may typically be much smaller than the outlet 124 of the dome structure and may serve as an introduction point for one or more process gases to be flowed into the dome structure 120 in support of wafer processing operations. The outlet of the dome structure 120 may typically be much larger, e.g., may have a diameter the same size as or larger than the diameter of the wafer 114. For a given process station, the faceplate 116 may be positioned below the dome structure 120 and proximate to an outlet 124 interposed between the faceplate 116 and the dome structure 120 of that process station 110. Thus, each dome structure 120 and the underlying faceplate 116 may form an enclosed volume that may be used to support plasma generation operations.

[0069] For example, each process station 110 may have one or more RF coils 126 that may extend at least partially around the dome structure 120 of that process station 110. The RF coils 126 may be connected to an RF power system 128 that is configured to operate in different power modes to provide different levels of RF power to the RF coils in each power mode. For example, the RF power system 128 may be configured to be switchable between a first power mode and a second power mode, where the amount or level of RF power supplied to the RF coils 126 in the first power mode is higher than the amount or level of RF power supplied to the RF coils 126 in the second power mode. The amount or level of power provided to the RF coils 126 may be selected to generate a plasma in the enclosed volume between the dome structure 120 and the faceplate 116 when a suitable process gas is present in the enclosed volume.

[0070] At least one set of gas distribution ports 118 exiting the bottom surface of faceplate 116 may be through-holes extending through faceplate 116, thereby allowing fluid communication between the enclosed volume between dome structure 120 and faceplate 116. This allows plasma that may be generated within such enclosed volume to flow over wafer 114 in support of wafer processing operations.

[0071] In some embodiments, faceplate 116 may also include one or more additional sets of gas distribution ports. The gas distribution ports in each such additional set of gas distribution ports may be blind holes that lead to corresponding gas distribution plenums located inside faceplate 116. Such additional sets of gas distribution ports may be used to provide one or more different process gases to the processing region between faceplate 116 and wafer 114, if desired.

[0072] The apparatus 100 may also include a cleaning plasma distribution system 144 configured to distribute a cleaning plasma to the stations 110. For example, the plasma generated within the enclosed volume between the dome structure 120 and the faceplate 116 may optionally be used in support of a deposition operation, resulting in the gradual deposition of a film on various interior surfaces of the apparatus 100, such as the surfaces of the chamber 102, the wafer support 112, and the faceplate 116, as a side effect of the deposition operation performed on the wafer 114.

[0073] Such by-product films may be undesirable because they may accumulate and begin to change the shape of features within the chamber 102 and may also act as a particle source that can generate particulates that can contaminate the wafer 114. Therefore, it may be desirable to perform periodic cleaning operations to remove such accumulated deposition by-products. Such cleaning operations may be performed by flowing a cleaning plasma, such as may be generated and distributed using a cleaning plasma distribution system 144, across the surface having such a film. In the illustrated embodiment, the cleaning plasma distribution system 144 includes a remote plasma source or generator 146 connected to a plasma inlet 148 located at the center of the chamber 102. When a cleaning operation is performed, plasma from the remote plasma source or generator 146 may be flowed into the chamber 102 through the plasma inlet 148. The cleaning plasma flow may then impinge on a baffle 150, which may be located at the center of the circular array of process stations 110. For example, the baffle 150 may be mounted on top of a central hub of the indexer system. The deflector 150 may redirect the downwardly directed flow of cleaning plasma exiting the plasma inlet 148 radially outward so that the flow of cleaning plasma flows across the backside of the wafer support 112 and faceplate 116 and ultimately impinges on the wall of the chamber 102.

[0074] It will be appreciated that there may be a variety of different types of cleaning plasma delivery systems 144 that may be used in an apparatus as described herein. In some embodiments, the cleaning plasma delivery system 144 may have a dedicated remote plasma source or generator 146 for each process station 110. In other embodiments, the cleaning plasma may be delivered from a common remote plasma source or generator 146 to the process stations 110 via separate dedicated plasma inlets 148 as opposed to through a single plasma inlet 148.

[0075] Generally speaking, the cleaning plasma distribution system 144 is a separate plasma generation system from that used to generate the plasma used in wafer processing operations, for example, using the RF coil 126. This is due to the fact that the amount of incidental deposition that occurs within the enclosed volume between the faceplate 116 and the dome structure 120 may be much smaller than that that occurs on the wafer support 112, the underside of the faceplate 116, and the walls of the chamber 102. Therefore, it may typically be more desirable to flow the plasma over such surfaces in a relatively direct manner with little flow obstruction. Flowing such cleaning plasma through the faceplate 116 results in a majority of the cleaning plasma impinging on the upper surface of the faceplate 116, reducing the amount of such cleaning plasma available to clean the wafer support 112, the walls of the chamber 102, and the surfaces below the faceplate 116.

[0076] Furthermore, generating the cleaning plasma within the enclosed volume between the faceplate 116 and the dome structure 120 means that the dome structure 120 is exposed to the cleaning plasma at its most aggressive state. The gas used in the cleaning plasma, e.g., NF3, may be selected to etch away the accumulated accidental film that is to be cleaned. When generated within the dome structure 120, the cleaning plasma etches away the material of the dome structure at a relatively rapid rate, requiring the dome structure 120 to be replaced at much more frequent intervals.

[0077] By keeping the cleaning plasma distribution system 144 separate from the plasma generation system provided using the RF coil 126 and a closed volume between the faceplate 116 and the dome structure 120, the cleaning plasma may be directed to surfaces requiring maximum cleaning without unnecessarily exposing the dome structure 120 to the cleaning plasma in its most energetic state.

[0078] Although the cleaning plasma may not be generated within or pass through the enclosed volume between the faceplate 116 and the dome structure 120, a portion of the cleaning plasma directed into the space between the faceplate 116 and the wafer support 112 may still flow upward through the gas distribution port 118 into the enclosed volume of the process station 110. While such plasma flow may be impeded or at least somewhat mitigated by flowing a non-reactive purge gas into the enclosed volume via the inlet 122 of the dome structure 120 to push against any cleaning plasma attempting to flow upward through the gas distribution port 118, it may still be desirable to allow some small amount of such cleaning plasma to enter the enclosed volume to completely or partially remove any deposition film that may have accumulated on the inner surface of the dome structure 120 or the upper surface of the faceplate 116.

[0079] 1 , the generation of a plasma for processing wafer 114 within the enclosed volume between faceplate 116 and dome structure 120 can result in a significant amount of heat being generated within the enclosed volume. If left unmitigated, such heat can cause thermal expansion cracking in the material of dome structure 120 and / or other structural damage to dome structure 120. To address such issues, apparatus 100 can also include a cooling system configured to remove heat from dome structure 120 or portions thereof, thereby limiting the temperature increase to which dome structure 120 may be subjected and preventing or at least partially mitigating damage that could occur to dome structure 120 due to heat generated by plasma that may be generated within the enclosed volume between dome structure 120 and faceplate 116.

[0080] The cooling system may be configured to circulate or flow a cooling fluid, such as ambient air, typically through the dome structure 120 to carry heat away from the dome structure 120 via convection. For the purposes of the remaining discussion, it will be assumed that the cooling fluid is ambient air (or simply "air"), although it will be understood that other cooling fluids may be used if desired and available. Thus, references to "air" or "ambient air" should be understood to indicate references to other cooling fluids as well.

[0081] In some embodiments, the cooling system may be designed to induce, at least in part, the movement of cooling fluid using equipment that is not part of the apparatus 100. For example, the apparatus 100 may be configured to interface with one or more systems that provide or receive various fluids from the apparatus 100. Such systems may be incorporated into the equipment in which the apparatus 100 is installed and may include, but are not limited to, a clean dry air (CDA) supply system that may provide a continuous supply of pressurized clean, dry air via an outlet, a water supply system that may provide a continuous supply of water, a power distribution system that may provide power at a particular voltage and current level, and an exhaust system configured to draw fluids from various points on the apparatus 100. For example, some exhaust systems may be configured to exhaust gases from within the chamber 102 and direct such gases to an abatement system, which may be used to neutralize or otherwise render safe any potentially harmful chemical species that may be present. Other exhaust systems may be used simply to cool the equipment and to draw cooling fluid, e.g., air, through various parts of the apparatus 100 before transporting it to a remote location where it is vented to the atmosphere (possibly with or without further treatment, e.g., filtration).

[0082] A cooling system that is connected to an exhaust system and uses the exhaust system to drive the flow of cooling fluid at least partially through the dome structure 120 may offer several advantages. For example, such an exhaust system may be used to drive the flow of cooling fluid at least partially for multiple devices 100, allowing a single fan or set of fans for the exhaust system to provide cooling to multiple different devices 100. This avoids the need for each device 100 to have its own dedicated exhaust system (and the hardware required to draw cooling fluid from the device). As an additional advantage, cooling fluid drawn into the exhaust system often exits the exhaust system at a location remote from the device 100, e.g., external to the facility in which the device 100 may be used. This prevents heat that may be transferred to the cooling fluid from being immediately reintroduced into the ambient air within the facility (or at least the ambient air near the device). Within the facility, heat may heat the ambient air, reducing its cooling efficiency, which is then flowed through the dome structure 120. Yet another advantage that may arise from the use of such a facility exhaust system is that the amount of noise that may be generated by the device 100 may be much less, because the device 100 does not require any fans at all, or as many fans as would be required if the device 100 were configured to generate the entire cooling fluid flow itself.

[0083] While a cooling system may prevent damage to the dome structure during generation of plasma within the enclosed volume between the dome structure 120 and the faceplate 116, such cooling may actually have a detrimental effect during the period in which the cleaning plasma is flowing. As previously mentioned, a portion of the cleaning plasma may be flowed into the enclosed volume between the dome structure 120 and the faceplate 116 during a cleaning operation, e.g., via the gas distribution port 118, to remove films that may deposit on the inner surface of the dome structure 120 and / or the upper surface of the faceplate 116. However, it has been found that the cleaning effectiveness of the cleaning plasma within the enclosed volume between the dome structure 120 and the faceplate 116 is significantly reduced when the dome structure 120 is cooled by a cooling system while the cleaning operation is being performed. Furthermore, cleaning effectiveness may be reduced in some instances, e.g., if the cooling system cools portions of the dome structure more effectively than other portions; accordingly, cleaning effectiveness may be less for films deposited in areas of the dome structure that have received more cooling compared to films deposited in areas of the dome structure that have received less cooling.

[0084] For example, film residue that cannot be cleaned from the inner surface of the dome structure due to a reduced cleaning effect of the cleaning plasma may become a source of particulates during subsequent processing operations. Such particulates may then pass through the gas distribution ports 118 and fall onto the wafer 114, contaminating the wafer 114.

[0085] One possible technique to address this reduced effectiveness of the cleaning plasma is to simply increase the time the cleaning plasma resides within the enclosed volume, thereby offsetting the reduced effectiveness of the cleaning plasma. However, this increases the overall duration of the cleaning process, resulting in reduced wafer throughput and reduced profitability of the apparatus 100. Furthermore, the cleaning plasma actually performs an etching process on the interior surface of the dome structure 120, removing whatever material forms the innermost surface of the dome structure 120. If the dome structure 120 is cooled unevenly, the cleaning plasma will etch away the innermost surface of the dome structure 120 at a faster rate in the warmer portions of the dome structure compared to the cooler portions of the dome structure 120. As a result, films deposited on warmer portions of dome structure 120 may tend to be removed more quickly than films deposited on cooler portions of dome structure 120, resulting in the underlying material of dome structure 120 (under the film) in the warmer portions of dome structure 120 being fully exposed to the cleaning plasma before the underlying material of dome structure 120 in the cooler portions of dome structure 120. Thus, the cleaning plasma may then begin to etch away the dome material itself in the warmer portions of dome structure 120 while simultaneously continuing to remove the deposited film in the cooler portions of dome structure 120. Over time, this results in the warmer portions of dome structure 120 eroding at a faster rate than the cooler portions, accelerating the degradation rate of the dome structure and shortening the overall lifespan of the dome structure.

[0086] To address such challenges, the cooling system may be configured to operate in different cooling modes, including, for example, a first cooling mode and a second cooling mode. The first cooling mode may be used while the apparatus 100 is performing a semiconductor processing operation that generates a plasma within an enclosed volume between the dome structure 120 and the faceplate 116. The second cooling mode may be used while the apparatus is performing a cleaning operation, for example, using the cleaning plasma delivery system 144. The cooling system may be configured to cool the dome structure at a first rate while in the first cooling mode and at a second rate, slower than the first rate, while in the second cooling mode. In some examples, the second rate may be 10% or less of the first rate, and in some such examples, the second rate may be zero, i.e., provide no cooling at all (or at least no cooling at all due to operation of the cooling system). By having such a cooling system, the apparatus 100 may be capable of operating in a wafer processing mode in which plasma is generated within the enclosed volume between the dome structure 120 and the faceplate 116 without causing thermal damage (or with less damage) to the dome structure 120, and a cleaning mode in which cleaning plasma is partially directed into the enclosed volume between the dome structure 120 and the faceplate 116 to clean accumulated film from the inner surface of the dome structure 120 in a more uniform and effective manner than would otherwise be possible.

[0087] The apparatus 100 may also include a controller 108, which may be configured to control various subsystems of the apparatus, such as the cleaning plasma delivery system 144, the RF power system 128, the cooling system, and various other systems that may operate at different times during different modes of operation. The controller 108 may be configured, for example, to enable the apparatus 100 to operate in at least a first mode of operation and a second mode of operation.

[0088] In a first mode of operation, the controller 108 may place the RF power system 128 in a first power mode and the cooling system in a first cooling mode. In a second mode of operation, the controller 108 may place the cooling system in a second cooling mode and cause the cleaning plasma distribution system to direct a cleaning plasma onto one or more wafer supports 112 of one or more process stations 110, and consequently into the enclosed volume between the dome structure 120 and the faceplate 116. In some embodiments, the controller 108 may cause the RF power system 128 to be in the second power mode when the apparatus is in the second mode of operation and may not cause the cleaning plasma distribution system to direct a cleaning plasma onto the wafer supports 112 when the apparatus is in the first mode of operation.

[0089] In the apparatus 100, a cooling system is provided using several components or subsystems. For example, the cooling system of the apparatus 100 includes an exhaust system interface 158 configured to connect to a facility exhaust system 162 and a plurality of conduits 160, each of which leads to an enclosure 130 that is part of each process station 110. The enclosure 130 may be, for example, a sheet metal structure that surrounds the dome structure 120 and the RF coil 126 to define a cooling volume 132 that houses the dome structure 120 therein. The enclosure 130 may also act as an RF shield that may act to contain RF energy emitted from the RF coil. Each of the conduits 160 may be fluidly interposed between one of the cooling volumes 132 and the exhaust system interface 158. In some embodiments, each enclosure may support or mount proximate to it a process gas supply system 152, e.g., one or more valves or other flow components that may be controlled to supply one or more process gases to the inlet 122 of the dome structure 120.

[0090] The enclosures 130 may also include one or more first holes 134, each of which is disposed proximate to a corresponding first fan 136. The first fan 136 may be configured to channel a cooling fluid, such as ambient air, into the enclosures 130 through the first holes 134, while the facility exhaust system 162 draws the cooling fluid from the enclosures 130. The dome structure 120 may be positioned such that it is within the flow path of the cooling fluid channeled from the first hole(s) 134 of each enclosure 130 to an outlet of each enclosure 130, and therefore can be cooled by the cooling fluid.

[0091] Apparatus 100 may include a flow regulation system that may be used to regulate the flow of fluid through conduit 160. Such a flow regulation system may be used in a system connected to an exhaust system, such as facility exhaust system 162, that is normally always on. For example, because it may be unpredictable when any particular apparatus 100 will be in a state where suction from facility exhaust system 162 is required, a single facility exhaust system 162 may simultaneously provide suction to many different apparatuses and normally remain in an "always on" state.

[0092] A flow conditioning system may be used to allow individual apparatuses 100 to control when (or to what extent) suction from the facility exhaust system 162 is applied to the various cooling volumes 132. For example, the flow conditioning system may be controlled to operate in different flow states, including, for example, a first flow state and a second flow state. In the first flow state, the flow conditioning system may allow up to a first level of fluid flow from the cooling volumes 132 defined by the enclosures 130 of the process stations 110 and through the exhaust system interface 158 via the one or more conduits 160. Similarly, in the second flow state, the flow conditioning system may allow up to a second level (lower than the first level) of fluid flow from the cooling volumes 132 defined by the enclosures 130 of the process stations 110 and through the exhaust system interface 158 via the one or more conduits 160. Such a flow regulation system may be controlled by controller 108 to have a first flow state when device 100 is placed in a first operating mode and a second flow state when device 100 is placed in a second operating state. In some embodiments, the second level of fluid flow may be 10% or less of the first level of fluid flow, and in some such cases, the second level of fluid flow may be a zero level of fluid flow.

[0093] It will be appreciated that a wide variety of different mechanisms may be used as the flow conditioning system, and that any suitable mechanism may be used as the flow conditioning system. For example, in apparatus 100, the flow conditioning system is provided as a movable element 166 disposed within exhaust system interface 158. Movable element 166, in this example, is a shutter disposed proximate to a first wall 170 of housing 168, which is part of exhaust system interface 158. An actuator 164, for example, a pneumatic piston actuator, may be provided and configured to cause movement of movable element 166 between a first position and a second position. However, it will be appreciated that such a flow conditioning system may also include multiple movable elements 166 and / or multiple actuators 164, as opposed to the single movable element 166 and actuator 164 shown.

[0094] In the first position, the movable element may provide a first level of flow resistance to fluid flow through one or more conduits 160, while in the second position, the movable element may provide a second, higher level of flow resistance to fluid flow through one or more conduits 160. For example, in the second position, the movable element(s) 166 may at least partially block a flow path (or one or more flow paths) through at least one of the conduits 160. In some such implementations, the movable element(s) 166 may completely block such flow path or paths when the movable element 166 is in the second position.

[0095] The controller 108 may be configured to control the actuator 164 such that the movable element 166 is in a first position when the device is in a first operating mode, and such that the movable element 166 is in a second position when the device is in a second operating mode.

[0096] In FIG. 1 , the movable element 166 is in a first position and does not block a plurality of first openings 172 in a first wall 170 of the housing 168 that lead from the interior of the exhaust system interface 158 to the conduit 160. When the movable element 166 is moved from the first position to a second position, as shown in dotted outline designated by 166′, the movable element 166 completely blocks the first openings 172 but does not block the second openings 174 in the first wall 170 of the housing 168. The second openings 174 may act as an outlet that provides an alternative flow path for suction by the facility exhaust system from the flow path through the conduit 160. Such an alternative flow path may, for example, lead to the ambient environment surrounding the device 100; for example, the second openings 174 (or outlet) may be fluidly interposed between the ambient environment and the exhaust system interface 158 (or at least the internal plenum volume of the exhaust system interface 158). When movable element 166 is in the first position, movable element 166 may at least partially block at least one of the alternative flow paths, and when movable element 166 is in the second position, movable element 166 may block at least one of the alternative flow paths to a relatively lesser extent. In apparatus 100, movable element 166 completely blocks second opening 174 (exhaust) leading to the alternative flow paths when in the first position, and does not completely block second opening 174 leading to the alternative flow paths when in the second position. Thus, suction from facility exhaust system 162 may be directed entirely through conduit 160 to cooling volume 132 when movable element 166 is in the first position, or entirely through the exhaust to the ambient environment when movable element 166 is in the second position. When suction is diverted to the ambient environment, little or no suction is applied to cooling volume 132, so that facility exhaust system 162 significantly (or completely) eliminates the flow of cooling fluid through cooling volume 132.

[0097] As mentioned above, the device 100 also features a first fan 136 disposed proximate the first hole 134 of the enclosure 130. The first fan 136 may also be controlled by the controller 108 to enter different states during different operational modes of the device 100. For example, the first fan 136 may be controlled to operate at different fan speeds, such as a first fan speed and a second fan speed that is slower than the first fan speed. In some implementations, the second fan speed may be 10% or less of the first fan speed. In some such implementations, the second fan speed may be zero.

[0098] For example, controller 108 may control first fan 136 to operate at a first fan speed when apparatus 100 is in a first mode of operation and at a second fan speed when apparatus 100 is in a second mode of operation. In some such implementations, when apparatus 100 is in the first mode of operation, facility exhaust system 162 may be fluidly connected to cooling volume 132 to draw cooling fluid from cooling volume 132, and first fan 136 may direct cooling fluid into cooling volume 132 to provide cooling to dome structure 120. Similarly, when apparatus 100 is in the second mode of operation, facility exhaust system 162 may be fluidly disconnected from cooling volume 132, and first fan may be stationary to stagnate the flow of cooling fluid through cooling volume 132 and minimize or completely eliminate cooling of dome structure 120.

[0099] It will be appreciated that various other configurations of apparatus 100 may be provided that may provide similar performance, but may be perhaps more or less effective in terms of how effectively they can control the cooling of the dome structure. For example, in some embodiments, movable element 166 may be repositioned to be disposed between conduit 160 and cooling volume 132; for example, each conduit 160 may be provided with a dedicated movable element 166 that can be moved between two positions. When in a first position, movable element 166 blocks the flow of cooling fluid from cooling volume 132 into conduit 160, and when in a second position, allows the flow of cooling fluid from cooling volume 132 into the conduit. In some such implementations, each movable element 166 may have its own actuator 164; in other implementations, multiple movable elements 166 may be actuated by a common actuator 164.

[0100] FIG. 2 depicts a variation of apparatus 100 in which an additional movable element is provided proximate first fan 136. Apparatus 100 of FIG. 2 is largely the same as that of FIG. 1, and the discussion of apparatus 100 of FIG. 1 applies equally to apparatus 100 of FIG. 2. However, apparatus 100 of FIG. 2 also includes fan shutters 138, each interposed between one of first fans 136 and its adjacent cooling volume 132. Each fan shutter 138 is connected to a fan shutter actuator 140, e.g., a linear actuator such as a pneumatically driven piston, and may be controlled by controller 108 to move between a first configuration and a second configuration to regulate the volumetric flow of cooling fluid into cooling volume 132 of enclosure 130 through corresponding first holes 134. In a first configuration, the fan shutter 138 may allow up to a first level of volumetric flow rate, and in a second configuration, the fan shutter 138 may allow up to a second level of volumetric flow rate. The first level of volumetric flow rate may be greater than the second level of volumetric flow rate. In some such implementations, the second level of volumetric flow rate may be 10% or less of the first level of volumetric flow rate, and in some further such cases, may be a zero level of volumetric flow rate.

[0101] In such embodiments, the controller may be configured to place one or more fan shutters 138 in a first configuration when the device 100 is in a first mode of operation, and to place one or more fan shutters 138 in a second configuration when the device 100 is in a second mode of operation. In some such embodiments, the first fan 136 may be controlled as described above with respect to FIG. 1 , while in other such embodiments, the first fan 136 may operate identically in both the first and second modes of operation (in such cases, the fan shutter 138 may prevent the movement of cooling fluid into the cooling volume 132).

[0102] FIG. 3 depicts another variation of the device 100. The device 100 of FIG. 3 is identical to the device 100 of FIG. 1, except that the second opening 174 in the first wall 170 of the housing 168 of the exhaust system interface 158 is omitted. In this embodiment, when the movable element 166 is in the second position, i.e., blocking the flow path through the conduit 160, there is no alternative flow path available for the suction provided by the applied facility exhaust system 162. As such, the exhaust system interface 158 is a dead end. The resulting interruption of fluid flow through the exhaust system interface 158 toward the facility exhaust system 162 may cause a gradual change in the amount of suction delivered to other devices 100 (or other systems) that may be connected to the facility exhaust system, which may be undesirable in some cases. However, such an approach may also be somewhat quieter than the approach reflected in the device 100 of FIG. 1 because it avoids the use of an outlet that allows delivery of suction to the ambient environment.

[0103] FIG. 4 illustrates yet another variation of the apparatus 100 of FIG. 1. In this embodiment, the apparatus 100 is not connected to the facility exhaust system 162. Instead, each enclosure 130 is provided with inlet / outlet holes 180 and reversible fans 182, in addition to the first fan 136 and first holes 134. Each reversible fan 182 may be positioned proximate one of the inlet / outlet holes 180 and configured to direct cooling fluid through the inlet / outlet holes 180 in a first direction when operated in a first direction mode, and to direct cooling fluid through the inlet / outlet holes 180 in a second direction opposite the first direction when operated in a second direction mode.

[0104] In such an embodiment, controller 108 may be configured to operate one or more reversible-direction fans 182 in a first direction mode when device 100 is in a first mode of operation, and to operate one or more reversible-direction fans 182 in a second direction mode when device 100 is in a second mode of operation. In such an embodiment, reversible-direction fans 182 may direct cooling fluid out of cooling volume 132 in the first direction mode and may direct cooling fluid into cooling volume 132 in the second direction mode. First fan 136 and reversible-direction fans 182 may, for example, operate to equalize fluid flow rates of cooling fluid through first holes 134 and inlet-outlet holes 180. Thus, when device 100 is in the first mode of operation, first fan 136 may direct cooling fluid into cooling volume 132, and reversible-direction fans 182 may draw cooling fluid out of cooling volume 132. However, when the device 100 is in the second operating mode, both the first fan 136 and the reversible fan 182 may direct cooling fluid into the cooling volume 132, causing flow through the cooling volume to stagnate and reducing or ceasing cooling.

[0105] In other embodiments, first fan 136 may operate to draw cooling fluid from cooling volume 132, and reversible fan 182 may direct cooling fluid into cooling volume 132 in the first direction mode and draw cooling fluid from cooling volume 132 in the second direction mode. In such embodiments, when device 100 is in the second mode of operation, first fan 136 and reversible fan 182 may both draw cooling fluid from cooling volume 132, similarly stagnating flow through the cooling volume and reducing or ceasing cooling.

[0106] In some cases, the cooling system may include a heating element that may be selectively activated to provide heating that at least partially offsets the cooling effect that may otherwise be provided by the cooling system. FIG. 5 depicts a variation of the apparatus 100 that includes such a heating element. As seen in the apparatus 100 of FIG. 5, the cooling system includes an exhaust system interface 158 that does not have a flow regulation system therein. Thus, there is always at least some flow of cooling fluid through the cooling volume 132 while the facility exhaust system 162 is operating (which typically is always the case). However, the enclosure 130 in this variation also houses one or more heating elements 178, each positioned to direct heat into the dome structure 120. While any suitable heating element 178 may be used, radiant heating may be preferred because it may heat the dome structure 120 more uniformly and may be relatively unaffected by the flow of cooling fluid (convective heat transfer, in contrast, is largely impeded by the flow of cooling fluid through the cooling volume 132). In the depicted example, the heating elements 178 are arrays of light-emitting diodes configured to provide heat to the illumination area by directing high-intensity light onto the dome structure 120. In some such approaches, the placement of such heating elements may be selected such that different regions of the dome structure 120, which are exposed to different amounts of cooling from the flow of cooling fluid, may receive different amounts of heating from the heating elements 178. For example, if certain regions of the dome structure 120 are known to be exposed to a greater amount of cooling than other regions (and thus typically have a lower temperature than those other regions), the heating elements may be configured to direct more heat into those specific regions and less heat into other regions, thereby increasing the temperature in the specific regions and causing a decrease in the temperature difference between the specific regions and other regions. This may increase temperature uniformity within the dome structure 120, which in turn may enable shorter cleaning times because certain regions typically require longer cleaning times due to their lower temperature, but the temperature increases in such specific regions.

[0107] 5 , the heating elements 178 (or heaters) may be operably controlled to provide different heating states, e.g., a first heating state and a second heating state. As described above, each heating element 178 may be associated with one of the process stations 110. Each heating element 178 may be configured to deliver a first amount of heating power to the dome structure 120 of the process station 110 in which it is located when in the first heating state, and to deliver a second amount of heating power to the dome structure 120 of that process station 110 when in the second heating state. The first amount of heating power may be less than the second amount of heating power, e.g., 10% or less of the second heating power, or even zero.

[0108] In such an embodiment, the controller 108 may place the heating element 178 in a first heating state when the cooling system is in a first cooling mode and in a second heating state when the cooling system is in a second cooling mode. Thus, when plasma is being generated within the dome structure 120, i.e., when the apparatus 100 is in a first operating state, the heating element 178 may be placed in a low-power state (possibly even off or at zero power) to allow the cooling system to effectively cool the dome structure 120. When the apparatus 100 is instead operating in a cleaning mode, i.e., a second operating state, the heating element 178 may be placed in a higher-power state, thereby providing heating to the dome structure 120 and at least partially counteracting the cooling provided by the flow of cooling fluid.

[0109] FIG. 6 depicts another variation of the apparatus 100, similar in operation to the apparatus 100 of FIG. 5, except that a heating element 178 is positioned to deliver heat to the cooling fluid before it passes through the first fan 136 and into the cooling volume 132. For example, each first fan 136 may be connected to a duct or other structure with a heating element 178 configured to heat the cooling fluid. The heating element 178 may be, for example, a resistive coil heater or other heater suitable for radiative heating of the fluid. In such a system, the cooling fluid may be preheated before reaching the dome structure 120 to reduce the cooling efficiency of the cooling system, for example, when the cooling system is operated in the second cooling mode.

[0110] It will be understood that the concepts described above in connection with any particular example embodiment may be rearranged in different combinations. For example, any device 100 featuring a connection to a facility exhaust system 162 may instead replace the connection to the exhaust system with a vent to the ambient environment. Such a vent may optionally include a fan (similar to the reversible fan 182 of FIG. 4 , but not necessarily reversible) to promote the flow of cooling fluid through the cooling volume 132. In such a case, the fan may be turned off when the cooling system is in the second cooling mode and turned on when the cooling system is in the first cooling mode (thereby circulating cooling fluid through the cooling volume 132) so that cooling fluid is not actively drawn through the cooling volume 132. In an alternative embodiment, the fan may include a shutter, for example, similar to the example device 100 of FIG. 2 , which may be actuated to block the flow of cooling fluid from the fan in the second cooling mode and to unblock the flow of cooling fluid from the fan in the first cooling mode. Heating elements 178 may additionally or alternatively be used in such embodiments, for example, similar to their use in device 100 of FIG.

[0111] While the above examples focus on embodiments in which there are multiple stations, it will be further understood that the concepts described above may equally apply to a single station tool, e.g., having a single dome structure 120, in which case some references to multiple elements may be replaced by references to a single item.

[0112] While the above example is directed to an apparatus that uses a first cooling mode when the apparatus is generating plasma within the dome structure and a second cooling mode when a cleaning plasma is provided, it will be further understood that other embodiments may use the first and second cooling modes under other corresponding conditions. For example, the first cooling mode may be used while the apparatus is performing a first stage of a semiconductor manufacturing process, and the second cooling mode may be used while the apparatus is performing a second stage of the semiconductor manufacturing process. In other words, the second cooling mode is not necessarily tied to the performance of a cleaning operation within the apparatus. It will therefore be understood that the apparatus discussed herein may have a controller configured to use the first cooling mode and / or the second cooling mode under conditions other than those discussed herein.

[0113] In some embodiments, such dome structures used in such tools and / or components in close proximity to the dome structure may be designed in a manner that can act to extend the life of the dome structure. For example, cleaning plasma that enters the enclosed volume between the faceplate and the dome structure through the faceplate typically has a higher energy density near the faceplate as opposed to at higher altitudes within the enclosed volume. As a result, the reactivity of the cleaning plasma may be higher in regions closer to the faceplate compared to regions further away from the faceplate. Consequently, the dome structure may experience increased etching rates from the cleaning plasma closer to the faceplate compared to regions further away from the faceplate.

[0114] To reduce the likelihood of increased etching of the dome structure closer to the faceplate, various features may be included in the dome structure or nearby components, either individually or in combination with each other and / or in combination with features previously discussed herein.

[0115] FIG. 7 depicts a detailed view of rectangular region 7 of FIG. 1. As seen in FIG. 7, dome structure 120 has a flange portion 190 extending radially outward from a vertically oriented (or nearly vertically oriented) sidewall portion 194 of dome structure 120. Flange portion 190 may have top and bottom surfaces in contact with seals 188, such as O-rings or other rubber seals. Seal 188 may be secured between faceplate 116 and collar 186. Collar 186 may be secured, for example, by threaded fasteners (not shown), which may be tightened to pull collar 186 relative to chamber 102 and faceplate 116, thereby securing faceplate 116 in position relative to chamber 102 and, in turn, dome structure 120 in position relative to faceplate 116.

[0116] In some cases, the vertical sidewalls and flange of the dome structure 120 may be formed as separate components that are later joined or fused to the remainder of the dome structure 120. For example, the portion of the dome structure 120 extending downward from approximately the apex of the collar 186 may be formed from an opaque quartz material and then joined or fused to the remainder of the dome structure 120, which may be formed from an optically transparent quartz material. Making the bottom of the dome structure 120, including the flange portion, opaque may protect the seal 188 from exposure to UV light, which may be emitted during plasma generation within the enclosed volume 121. This may prevent the seal 188 from deteriorating or being damaged by material degradation caused by exposure to such UV light. For purposes of this disclosure, the term “opaque” with respect to the optical properties of quartz shall be understood to refer to a material that blocks at least 90% of light per 2 millimeters of material thickness in the wavelength range of 100 nm to 400 nm. In some embodiments, optically opaque quartz material may block up to 95% or 99% of light in this wavelength range per 2 millimeters or per millimeter of material thickness.

[0117] However, making the bottom of the dome structure 120 opaque in this manner may also increase the susceptibility of the bottom of the dome structure 120 to chemical attack, for example, by a cleaning plasma. For example, opaque quartz is produced when microbubbles or other small inclusions are trapped within fused silica, which then cools to form quartz. However, such microbubbles represent areas within the quartz where no material is present. Therefore, each such microbubble provides no resistance to the etching being performed, thereby accelerating the overall etch rate of the dome structure in the areas with the microbubbles.

[0118] In FIG. 7 , the flange portion 190 and the remainder of the dome structure 120 are both formed from optically transparent quartz, e.g., as a single, continuous piece having a homogeneous material composition. This avoids exposing the opaque quartz material to the cleaning plasma. In other words, the entire interior surface of the dome structure 120 may be formed from optically transparent quartz (without microbubbles), and therefore does not have areas where the dome structure material is not solid and therefore would etch at a faster rate. However, this means that the flange portion 190 is transparent to UV light that may result from the enclosed volume 121. In this embodiment, the flange portion 190 has an opaque material layer 192 on (or forming) both its top and bottom surfaces. The opaque material layer 192 may be, for example, a thin layer, e.g., about 3 mm thick (or thicker), of optically opaque quartz, fused or bonded to the top and bottom surfaces of the flange portion 190 to provide the seal 188 with a barrier to UV light transmission. The opaque material layer may, in some embodiments, be an optically opaque coating that is applied or deposited directly onto the top and bottom surfaces of flange portion 190 .

[0119] The collar 186 may be a single-piece or multi-piece structure that surrounds the dome structure 120 and defines an internal opening, the internal opening having a nominal diameter that is larger than the outer diameter of the dome structure 120 immediately above the flange portion 190 but smaller than the outer diameter of the flange portion 190. The collar 186 may, in some examples, include an internal cooling passage 184 that extends at least partially around the dome structure 120. For example, if the collar 186 is a single-piece collar, the cooling passage 184 may extend around the entire dome structure 120, or nearly the entire dome structure 120. However, if the collar 186 is a multi-piece collar, such as four equally sized, arcuate pieces shaped approximately a quarter of a circumference, each piece may have an individual cooling passage disposed therein. In either case, one or more cooling passages 184 may extend around the dome structure, either singly or collectively. During at least the cleaning operation, a coolant may be circulated through the cooling passage(s) to remove heat from adjacent structures, such as the edges of the collar 186 and faceplate 116 and the dome structure 120. This allows the bottom of the dome structure 120 to be cooled while the cleaning plasma is flowing, thereby reducing the rate at which the cleaning plasma that reaches the enclosed volume 121 etches the material of the dome structure 120.

[0120] Figure 8 illustrates a top view of an example of a multi-segment collar for securing a dome structure. As seen in Figure 8, collar 186 is comprised of four identically sized and shaped pieces 186a, 186b, 186c, and 186d, each having a corresponding internal cooling passage 184a, 184b, 184c, and 184d, respectively. Each internal cooling passage 184a, 184b, 184c, and 184d may extend between a respective inlet and outlet. In the depicted example, internal cooling passages 184a, 184b, 184c, and 184d are connected in series, with the outlet of each of internal cooling passages 184a, 184b, and 184c connecting to the inlet of the next internal cooling passage 184b, 184c, and 184d, respectively, and coolant being introduced into the series of flow paths via inlet 191a of internal cooling passage 184a and received from internal cooling passage 184d via outlet 193d of internal cooling passage 184d. However, in other embodiments, each of the internal cooling passages 184a, 184b, 184c, and 184d may receive coolant in parallel; for example, the coolant introduced into each of the internal cooling passages 184a, 184b, 184c, and 184d may be at approximately the same temperature (or at least not be preheated by passing through one of the other internal cooling passages 184a, 184b, 184c, and 184d). Fasteners 185 for securing pieces 186a, 186b, 186c, and 186d of the collar 184 are also visible in FIG. 8. FIG. 9 depicts a similar collar 186 that is a continuous ring and has a single internal cooling passage 184 that extends around substantially the entire circumference of the dome structure 120. Coolant may be introduced into the internal cooling passage 184 through an inlet 191 and removed through an outlet 193.

[0121] It will be appreciated that the circulation of cooling fluid through the cooling passages 184 and the use of optically transparent quartz for all portions of the dome structure 120 that bound the enclosed volume 121 both reduce the rate at which the dome structure 120 is etched by the cleaning plasma during the cleaning plasma flow, although it will also be appreciated that the two features may be used individually in some embodiments without the other feature, or not at all (which may accelerate the etching rate of the dome structure).

[0122] 10 depicts another variation in which flange portion 190 is formed from opaque quartz and is a separate piece that is bonded or fused to the remainder of dome structure 120, which is formed from optically clear quartz. In this example, flange portion 190 blocks all of the UV light emitted from the plasma generated within enclosed volume 121 from reaching seal 188.

[0123] 11 depicts another variation in which faceplate 116 has cooling passage(s) 184. For example, faceplate 116 may have one or more cooling passages disposed therein that extend around the periphery of faceplate 116 adjacent bottom seal 188. In this example, flange portion 190 extends from the bottom edge of dome structure 120, bringing flange portion 190 immediately adjacent faceplate 116 for intimate contact with the portion of faceplate 116 having cooling passage(s) therein, thereby increasing the cooling effect of the cooling passage(s) on dome structure 120. Flange portion 190 in this example is similar to that of FIG. 10 and is, for example, a separate ring-shaped piece of optically opaque quartz that is fused or bonded to the remainder of the dome structure, which may be formed of optically transparent quartz. In other embodiments, the flange portion may instead be, for example, optically transparent quartz, with a layer or coating of optically opaque material bonded to its top and bottom surfaces, as shown in FIG.

[0124] Regardless of the particular implementation of the dome structure used, it has been found that modifying the manufacturing process used to form the dome structure can have beneficial effects in some instances.

[0125] With respect to quartz structures, the dome structure may be fabricated using any suitable manufacturing process used to create quartz portions of such shapes. Figures 12-16 depict an example of such a dome structure during various stages of fabrication. For example, molten quartz may be subjected to glassblowing techniques to create the overall shape of the dome structure, and then separately fabricated quartz components, such as flanges at the top and bottom of the dome structure, may be fused to the blown portions of the dome structure using, for example, quartz or glass welding techniques. For example, in Figure 12, dome structure components 1220a, 1220b, and 1220c are shown as separate pieces. Dome structure components 1220a and 1220c are ring-shaped components that may provide flanges, such as flange portion 1290, which, as described above, may be used to interlock the resulting dome structure with other components when installing the dome structure in a semiconductor processing tool. Dome structure component 1220b, in contrast, may provide the overall shape of the dome structure and may be, for example, a glassblown quartz structure. FIG. 13 depicts assembled dome structure components 1220a, 1220b, and 1220c, which may represent the arrangement of these components before they are fused together by a quartz or glass welding operation. FIG. 14 depicts the resulting dome structure resulting from the fusion of dome structure components 1220a, 1220b, and 1220c. The resulting assembled dome structure may then have one or more post-assembly machining operations performed on it, for example, to machine or polish various surfaces to specific tolerances. For example, a flange of the dome structure may be machined to have a flat surface, such as one intended to mate with another component, such as a faceplate or collar. Once the dome structure is machined to its final desired shape, it may then be subjected to a flame-polishing operation to achieve a smooth surface finish before final inspection and installation into a tool.

[0126] In some instances, some quartz dome structures manufactured according to such techniques have been found to generate high levels of particle contamination, e.g., approximately 100 to several hundred particulates 3 microns or larger in size. The inventors have observed significant mitigation of particle contamination after subjecting the installed quartz dome structure to one or more chamber conditioning operations in which the interior of the dome structure is subjected to an atomic fluorine cleaning process for a significant total period, e.g., at least 20 hours in total. However, performing such a conditioning process in a chamber in which a dome structure is installed renders the chamber unavailable for wafer processing operations. After performing such chamber conditioning operations for the aforementioned sustained periods, the number of particulates 3 microns or larger deposited on wafers processed using the dome structure has been found to be reduced by an order of magnitude, e.g., less than 10.

[0127] During the conditioning operation, exposure of the interior of the dome structure to the atomic fluorine gas used in the cleaning process employed during chamber conditioning results in etching away material from the inward-facing surface of the dome structure. The amount of material removed from the interior surface of the dome structure during such conditioning operation has been found to be approximately one-thousandth of an inch before a significant reduction in particulate generation is observed. The inventors have determined that performing such material removal as part of the dome structure's manufacturing process, i.e., prior to installation of the dome structure in a tool / chamber, provides the same low particulate generation benefit immediately after installation of the dome structure in the tool, thereby avoiding the need to perform a chamber conditioning operation solely to reduce the initial particulate generation rate.

[0128] In particular, the manufacturing process for the dome structure generally described above may be modified by including an extra manufacturing step after the dome structure has been otherwise completed, e.g., after fire polishing the dome structure, in which the dome structure, or at least the interior surface of the dome structure that will be exposed to the process gas flow when the dome structure is installed in a semiconductor processing tool, may be subjected to an etching process to remove a layer of material, e.g., quartz, from the dome structure. In some embodiments, the etching process may be designed to remove about 0.001" of material. Such material removal may represent, for example, an average amount of material removal or a minimum amount of material removal. It will be understood that such etching processes may also be designed to remove at least 0.001" of material, but may remove more than 0.001" of material. Generally speaking, removing more than 0.001" of material may not appreciably reduce particulate generation beyond the reduction achieved through removing about 0.001" of material, while still providing the same beneficial effect. However, such additional material removal, of course, requires additional time (and therefore entails additional cost). It may also serve to further reduce the overall thickness of the dome structure, shortening its overall lifespan (the thickness of the dome structure slowly degrades during normal processing operations due to the effects of periodic cleaning operations that must be performed, resulting in the need to replace the dome structure from time to time. If the thickness of the dome structure is reduced, this increases the frequency at which the dome structure needs to be replaced).

[0129] At the same time, reduced particulate generation may sometimes be achieved by etching less than 0.001" of the dome structure (or at least its inner surface(s)) in an extra manufacturing step. The reduction in particulate generation resulting from such lesser material removal, however, will typically be less than that seen for about 0.001" of material removal. It will therefore be understood that the present technology also encompasses such extra manufacturing steps that require less than 0.001" of material to be removed from the dome structure (or its inner surface(s)). For example, in some embodiments, the extra manufacturing step may include etching away at least 0.0009", 0.0008", 0.0007", 0.0006", 0.0005", 0.0004", or 0.0003" (minimum or average) of material from at least the inner surface(s) of the dome structure, instead of at least 0.001" of material.

[0130] The etching process performed in the extra manufacturing step may be provided by exposing the surface(s) of the dome structure where material removal occurs to an etchant, such as atomic fluorine, hydrogen fluoride, or other substance that reacts with quartz and can etch away the material of the dome structure. The etchant may be provided in gas or liquid form, and at a concentration that may be selected to provide the desired amount of material removal within the desired exposure time to the etchant.

[0131] For example, the dome structure may have its open end covered by another component, such as a sealing plate, to form a bowl or other open-top container. FIG. 15 depicts such an arrangement. As can be seen, the dome structure 1220 is turned upside down so that the smaller opening (the "entrance" opening) to the dome structure faces downward. A cap 1296 is placed over the smaller opening, effectively turning the dome structure 1220 into an open-top container. This open-top container may then be filled with an aqueous solution of hydrogen fluoride, which may then be allowed to remain within the dome structure for an extended period of time, such as several hours, until the desired amount of material removal has occurred or is expected to have occurred. For example, it has been found that a 25% molar concentration of hydrofluoric acid (hydrogen fluoride) can etch approximately 0.001" of material from the interior surface of a quartz dome structure after 3-4 hours of exposure (although other concentrations may be used depending on the amount of etching desired and the desired time frame for the etching process). FIG. 16 depicts the dome structure 1220 of FIG. 15 filled upside down with an etchant 1298. The etchant may then be drained, and if desired, one or more thickness measurements of the dome structure may be taken. Such measurements may be compared to similar measurements obtained prior to etching of the dome structure to enable characterization of the thickness of the material layer removed by the etchant. If necessary, for example, if the desired amount of material has not been removed, the dome structure may be refilled with etchant and the dome structure may be further exposed to the etchant to remove additional material. This procedure may be repeated as necessary until the desired degree of material removal is achieved.

[0132] If a gas-based etching process is used during the extra dome structure fabrication process, the dome structure may alternatively be sealed at both open ends to form a sealed chamber that can contain the etchant.

[0133] It will be appreciated that once the extra manufacturing steps have been performed and the dome structure has been etched, the dome structure may also be subjected to one or more cleaning or rinsing operations to clean or rinse any possible remaining contaminants from the exterior of the dome structure.

[0134] As noted above, the extra manufacturing step for the dome structure is performed after the fire polishing step. However, it will be understood that in other dome structure manufacturing processes, the fire polishing step may not be performed at all. In such instances, the extra manufacturing step may simply be the last material removal or modification step performed. However, in such instances, it may be the case that the amount of material removed in the extra manufacturing step may be increased from the recommended 0.001" of material removal recommended above.

[0135] For example, in a fire-polished dome structure, the fire polishing has the effect of "leveling" the surface finish of the dome structure. For example, the "highest points" of the surface structure may melt and flow radially outward, thereby resulting in a lower height of the highest points. On the other hand, the lowest points of the surface structure may also melt and flow radially inward, thereby partially filling the recesses associated with the lowest points. As a result, the difference between the "highest" and "lowest" points on a fire-polished surface (relative to the midplane of such surface) may be reduced after fire polishing. This "averaging" effect may, for example, somewhat reduce particulate contamination that may result from the use of a fire-polished dome structure (compared to a non-fire-polished dome structure). If the fire-polishing step is not performed, the extra manufacturing step of chemically removing a layer of material described above may then be modified to remove more than 0.001" of material to remove a source of particulates that would have been removed had the fire-polishing step been performed.

[0136] It will also be appreciated that the same extra manufacturing steps may be used with a dome structure that is not a multi-piece assembly, but instead is manufactured as a single piece from the beginning.

[0137] FIG. 17 depicts a high-level flow diagram of the dome structure manufacturing process described above. At block 1702, the dome structure may be assembled using any suitable manufacturing process for manufacturing a quartz dome structure (either as a multi-piece assembly or as a single-piece portion). At block 1704, any remaining mechanical machining operations necessary to bring the dome structure to its final machined shape may be performed. This may include performing any machining operations that may create dust particles, such as drilling, cutting, grinding, lapping, etc. At block 1706, the dome structure may optionally be flame polished as described above. Such flame polishing may include, for example, exposing the surface(s) of the dome structure to be polished to a high-temperature flame, e.g., greater than 1500° C., to soften / melt the outermost layer of quartz.

[0138] At block 1708, one or more surfaces of the dome structure may be subjected to an etching process as previously described, in which a layer of quartz is etched away by exposure to a chemical etchant such as hydrofluoric acid. Such a quartz layer may be, for example, about 0.001" thick, although other thicknesses may also be used. It is worth noting that if the optional flame polishing operation of block 1706 is also performed, the subsequent etching of the dome structure at block 1708 effectively "undoes" the flame polishing operation, as the resulting etched surface of block 1708 will have a white or cloudy appearance, whereas that same surface will have a polished or smooth appearance after flame polishing and immediately prior to the etching step.

[0139] At block 1710, the etched dome structure may be subjected to a cleaning operation, e.g., where any chemical residues that may be present may be washed away. At block 1712, the dome structure may be provided to, e.g., a downstream manufacturer of a semiconductor processing tool, for installation in the semiconductor processing tool.

[0140] Once the dome structure is provided for installation in a semiconductor processing tool, the dome structure may then be installed within such semiconductor processing tool in block 1714, after which the tool with the installed dome structure may be used to process one or more semiconductor wafers in block 1716. It will be appreciated that blocks 1714 and 1716 may be performed separately from the fabrication of the dome structure itself.

[0141] As mentioned above, in some embodiments, a controller may be part of the apparatus described herein. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, such as processes for controlling actuator movement, fan operation, and / or heating provided by heating elements, as well as other processes or parameters not described herein, such as delivery of process gases, temperature settings (e.g., heating and / or cooling of other components such as the wafer support), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer loading and unloading into and out of the chamber, and wafer loading and unloading into and out of other transport tools and / or load locks connected or interfaced with the particular system.

[0142] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0143] In some embodiments, the controller may be part of or connected to a computer that is integrated into the system, connected to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be all or part of a “cloud,” i.e., fab host computer system, enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria from multiple manufacturing operations, modify parameters of a current process, configure processing steps to track a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more individual controllers networked together and operating toward a common purpose, such as the processes and controls described herein. One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperatively control the processes in the chamber.

[0144] Examples of apparatus according to the present disclosure may be attached to or part of a semiconductor processing tool including, but not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0145] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports of wafers within a semiconductor manufacturing factory.

[0146] While the above refers to various systems that are operable in different states, modes, etc., it will be understood that such references are not limited to only the various states, modes, etc. that may be enumerated. For example, a system that is operable in different modes, including a first mode and a second mode, is not limited to being operable in only the first or second mode, but may also optionally be operable in a third mode, a fourth mode, etc.

[0147] Furthermore, it is understood that terms such as "including," "includes," and the like, unless expressly stated otherwise, are to be construed in an open-ended manner, e.g., similar to "comprising." For example, a device including two threaded fasteners is understood not to exclude a device including three threaded fasteners. However, a device including only two threaded fasteners is understood to exclude a device including three threaded fasteners.

[0148] The use of ordinal markers, e.g., (a), (b), (c)... or (1), (2), (3)... in this disclosure and claims shall be understood not to convey a particular order or sequence, unless, if any, a particular order or sequence is explicitly indicated. For example, where there are three steps labeled (i), (ii), and (iii), it shall be understood that these steps may be performed in any order (or even simultaneously, unless specifically prohibited) unless otherwise indicated. For example, if step (ii) involves processing an element produced in step (i), step (ii) may be considered to occur at some point after step (i). Similarly, if step (i) involves processing an element produced in step (ii), it shall be understood that the reverse is true. It shall also be understood that the use of the ordinal marker "first," e.g., "first item," herein should not be construed as suggesting, implicitly or inherently, that a "second" instance, e.g., "second item," is necessarily present.

[0149] Phrases such as "for each <item> of one or more <items>," "for each <item> of one or more <items>," and the like, as used herein, are understood to include both groups of single items and groups of multiple items; i.e., the phrase "for each of" is used in the sense used in programming languages ​​to refer to each item of any referenced collection of items. For example, if the referenced collection of items is a single item, then "each" refers only to that single item (notwithstanding the fact that dictionary definitions often define "each" as a term referring to "every one of two or more things") and does not imply that at least two of those items must be present. Similarly, the terms "set" or "subset" should not be considered as necessarily including multiple items, and it will be understood that a set or subset can include only one member or multiple members (unless the context dictates otherwise).

[0150] For purposes of this disclosure, just as the term "electrically connected" is used in reference to components connected together to form an electrical connection, the term "fluidically connected" is used in reference to volumes, plenums, bores, etc. that may be connected to one another, either directly or through one or more intervening components or volumes, to form a fluid connection. The term "fluidically intervening," if used, may be used to refer to a component, volume, plenum, or bore that is fluidly connected to at least two other components, volumes, plenums, or bores. Thus, fluid flowing from one of those other components, volumes, plenums, or bores to another of those other components, volumes, plenums, or bores will first pass through the "fluidically intervening" component before reaching that other or another of those components, volumes, plenums, or bores. For example, if a pump is fluidly intervening between a reservoir and an outlet, fluid flowing from the reservoir to the outlet will first pass through the pump before reaching the outlet. The term "fluidically adjacent," if used, refers to the placement of one fluidic element relative to another such that there are no fluidically intervening structures between the two elements that could potentially block fluid flow between the two elements. For example, in a flow path having a first valve, a second valve, and a third valve arranged in series along it, the first valve is fluidly adjacent to the second valve, the second valve is fluidly adjacent to both the first and third valves, and the third valve is fluidly adjacent to the second valve.

[0151] As used herein, and when used in conjunction with a range of values, the term "between" shall be understood to encompass both the beginning and end values ​​of the range, unless otherwise indicated. For example, between 1 and 5 shall be understood to encompass the numbers 1, 2, 3, 4, and 5, as well as the numbers 2, 3, and 4.

[0152] The term "operably connected" shall be understood to refer to a state in which two components and / or systems are directly or indirectly connected, for example, so that at least one component or system can control the other. For example, a controller may be described as operably connected to a resistive heating unit, encompassing the controller being connected to a sub-controller of the resistive heating unit, the resistive heating unit being electrically connected to a relay device configured to controllably connect or disconnect the resistive heating unit to a power source, the power source being capable of providing an amount of power to power the resistive heating unit to produce a desired degree of heating. While the controller itself likely cannot directly provide such power to the resistive heating unit due to the currents involved, the controller is still understood to be operably connected to the resistive heating unit.

[0153] It is understood that the examples and embodiments described herein are for illustrative purposes only, and that various modifications or changes will be suggested to those skilled in the art in light thereof. Various details have been omitted for clarity, but various design alternatives may be implemented. Therefore, the examples are to be considered illustrative and not limiting, and the disclosure is not limited to the details given herein, but may be modified within the scope of the disclosure.

[0154] While the above disclosure focuses on a particular example embodiment or embodiments, it is understood that it is not limited to only the described examples, but may also apply to similar variations and features, and such similar variations and features are also considered to be within the scope of the present disclosure, provided that the present disclosure is directed to at least the following numbered embodiments:

[0155] Embodiment 1: An apparatus comprising: one or more process stations, each process station comprising: an enclosure defining a cooling volume; a dome structure including a radio wave transparent material, having an inlet and an outlet opposite the inlet, the dome structure being disposed within the cooling volume of the enclosure of the process station; one or more radio frequency (RF) coils extending around a dome structure of the process station; a faceplate disposed below the dome structure of the process station and proximate to an outlet of the dome structure of the process station; a wafer support positioned to interpose a faceplate of the process station between the wafer support of the process station and a dome structure of the process station; one or more process stations, a cleaning plasma distribution system configured to facilitate direction of the cleaning plasma onto one or more wafer supports of one or more process stations; an RF power system configured to be operable in different power modes, the different power modes including a first power mode and a second power mode; an RF power system providing at least a first level of RF power to one or more RF coils of one or more process stations in a first power mode; the RF power system, in a second power mode, provides a second level of RF power to the one or more RF coils of the one or more process stations; and the second level of RF power is less than the first level of RF power; an RF power system; a cooling system configured to be operable in different cooling modes, the different cooling modes including a first cooling mode and a second cooling mode; a cooling system that cools one or more dome structures of one or more process stations at a first rate and using a cooling fluid in a first cooling mode; and the cooling system, in a second cooling mode, cools the one or more dome structures of the one or more process stations at a second rate slower than the first rate and using a cooling fluid; A cooling system; a controller configured to enable the device to operate in different operating modes, the different operating modes including at least a first operating mode and a second operating mode; When the controller enables the device to operate in the first operating mode, the controller places the RF power system in the first power mode and the cooling system in the first cooling mode; and When the controller enables the apparatus in the second operating mode, it causes the cleaning plasma delivery system to direct a cleaning plasma onto one or more wafer supports of one or more process stations and causes the cooling system to be in a second cooling mode. Controller and 1. An apparatus comprising:

[0156] Embodiment 2: The apparatus of embodiment 1, further comprising a flow regulation system configured to be operable at different flow states, the different flow states comprising a first flow state and a second flow state; the cooling system includes an exhaust system interface and one or more conduits, each conduit fluidly interposed between the exhaust system interface and a cooling volume defined by the enclosure of a corresponding one of the one or more process stations, the exhaust system interface configured to be connected to a facility exhaust system; the flow conditioning system allows, under a first flow condition, up to a first level of fluid flow from one or more cooling volumes defined by one or more enclosures of the one or more process stations and through the exhaust system interface via one or more conduits; the flow conditioning system allows, under a second flow condition, up to a second level of fluid flow from one or more cooling volumes defined by one or more enclosures of the one or more process stations and through the exhaust system interface via one or more conduits; the second level of fluid flow is less than the first level of fluid flow; the controller is configured to place the flow regulation system in a first flow state when the device is placed in a first operating mode; and the controller is configured to place the flow regulation system in a second flow state when the device is placed in the second operating mode; Device.

[0157] Embodiment 3: The device of embodiment 2, wherein the second level of fluid flow is less than or equal to 10% of the first level of fluid flow.

[0158] Embodiment 4: The device of embodiment 2, wherein the second level of fluid flow is a zero level of fluid flow.

[0159] Embodiment 5: The device of any of embodiments 2 to 4, the flow regulation system includes one or more actuators and one or more movable elements; the one or more actuators are configured to move the one or more movable elements between at least a first position and a second position upon actuation; the one or more movable elements, when in the first position, provide a first level of flow resistance to fluid flow through the one or more conduits; the one or more movable elements, when in the second position, provide a second level of flow resistance to fluid flow through the one or more conduits; the second level of flow resistance is greater than the first level of flow resistance; when the controller places the device in a first operating mode, it controls the one or more actuators so that the one or more movable elements are in a first position; and and when the controller places the device in the second operating mode, the controller controls the one or more actuators so that the one or more movable elements are in the second position. Device.

[0160] Embodiment 6: An apparatus according to embodiment 5, wherein each movable element of the one or more movable elements is configured to at least partially block a flow path through at least one of the one or more conduits when in the second position.

[0161] Embodiment 7: An apparatus according to embodiment 5, wherein each movable element of the one or more movable elements is configured to completely block a flow path through at least one of the one or more conduits when in the second position.

[0162] Embodiment 8: The device of any of embodiments 5 to 7, the flow regulation system includes one or more outlets, each outlet leading to an alternative flow path separate from the one or more flow paths through the one or more conduits; and each movable element of the one or more movable elements is configured to at least partially block at least one of the alternative flow paths when in a first position and to block at least one of the alternative flow paths to a relatively lesser extent when in a second position; Device.

[0163] Embodiment 9: The device of any of embodiments 5 to 7, the flow regulation system includes one or more outlets, each outlet leading to an alternative flow path separate from the one or more flow paths through the one or more conduits; and each movable element of the one or more movable elements is configured to completely block at least one of the alternative flow paths when in a first position and to not block at least one of the alternative flow paths when in a second position; Device.

[0164] Embodiment 10: The device of embodiment 9, one or more outlets fluidly interposed between the exhaust system interface and the ambient environment; and One or more alternative flow paths are connected to the surrounding environment; Device.

[0165] Embodiment 11: A device according to any one of embodiments 5 to 10, wherein each movable element is a shutter.

[0166] Embodiment 12: An apparatus according to embodiment 11, wherein the flow control system is disposed at the exhaust system contact point.

[0167] Embodiment 13: The device of embodiment 12, the one or more process stations include a plurality of process stations; the exhaust system interface includes a housing having one or more walls with one or more first openings and one or more second openings, each first opening leading to one of the conduits, and each second opening functioning as one of the one or more outlets or as a single outlet; and the one or more movable elements include a movable element that is a shutter, the shutter sized to block all of the one or more second openings but not any of the one or more first openings when in a first position, and to block all of the one or more first openings but not any of the one or more second openings when in a second position; Device.

[0168] Embodiment 14: The device of any of embodiments 1 to 13, each enclosure having one or more first holes and one or more first fans, each first fan being disposed proximate one of the first holes; the controller is configured to operate one or more first fans in each enclosure at a first fan speed when the controller places the device in a first operating mode; the controller is configured to operate the one or more first fans in each enclosure at a second fan speed when the controller places the device in the second operating mode; and The second fan speed is slower than the first fan speed. Device.

[0169] Embodiment 15: The device of embodiment 14, wherein the second fan speed is less than or equal to 10% of the first fan speed.

[0170] Embodiment 16: The device of embodiment 14, wherein the second fan speed is zero.

[0171] Embodiment 17: The device of any of embodiments 1 to 13, each enclosure having one or more first holes, one or more first fans, and one or more fan shutters; Each first fan is disposed adjacent to one of the first holes; each fan shutter is configured to be movable between a first configuration and a second configuration to adjust a volumetric flow of cooling fluid into a cooling volume of the enclosure of which the fan shutter forms a part; each fan shutter, in a first configuration, permitting up to a first level of volumetric flow of cooling fluid; each fan shutter, in the second configuration, permits up to a second level of volumetric flow of cooling fluid; the first level of volumetric flow is greater than the second level of volumetric flow; the controller is configured to place the one or more fan shutters in a first configuration when the device is placed in a first operating mode; and the controller is configured to place the one or more fan shutters in the second configuration when the controller places the device in the second operating mode; Device.

[0172] Embodiment 18: An apparatus according to embodiment 17, wherein the second level of volumetric flow rate is 10% or less of the first level of volumetric flow rate.

[0173] Embodiment 19: An apparatus according to embodiment 17, wherein the second level of volumetric flow is zero.

[0174] Embodiment 20: The device of any of embodiments 14 to 19, each enclosure including one or more inlet / outlet holes and one or more reversible fans, each reversible fan disposed adjacent one of the inlet / outlet holes and configured to direct cooling fluid in a first direction through the adjacent inlet / outlet hole when operated in a first directional mode, and to direct cooling fluid in a direction opposite to the first direction through the adjacent inlet / outlet hole when operated in a second directional mode; the controller is configured to operate the one or more reversible fans in the first directional mode when the device is in the first operational mode; and the controller is configured to operate the one or more reversible fans in the second directional mode when the controller places the device in the second operational mode; Device.

[0175] Embodiment 21: The device of any of embodiments 1 to 20, the cooling system includes one or more heaters configured to be operable in different heating states, the different heating states including a first heating state and a second heating state; each heater is associated with one of the one or more process stations and configured to deliver a first amount of heating power to the dome structure of that process station when in a first heating state and a second amount of heating power to the dome structure of that process station when in a second heating state; the first amount of heating power is less than the second amount of heating power; and a controller configured to place the one or more heaters in a first heating state when the cooling system is in a first cooling mode and in a second heating state when the cooling system is in a second cooling mode; Device.

[0176] Embodiment 22: The device of any of embodiments 1 to 20, the cooling system includes one or more heaters configured to be operable in different heating states, the different heating states including a first heating state and a second heating state; each heater is associated with one of the one or more process stations and is configured to deliver a first amount of heating power to the cooling fluid when in a first heating state before the cooling fluid is flowed through the cooling volume of that process station, and to deliver a second amount of heating power to the cooling fluid when in a second heating state before the cooling fluid is flowed through the cooling volume of that process station; the first amount of heating power is less than the second amount of heating power; and the controller is configured to place the one or more heaters in a first heating state when the cooling system is in a first cooling mode and in a second heating state when the cooling system is in a second cooling mode; Device.

[0177] Embodiment 23: An apparatus according to embodiment 21 or 22, wherein the first amount of heating power is 10% or less of the second amount of heating power.

[0178] Embodiment 24: An apparatus according to embodiment 21 or 22, wherein the first amount of heating power is zero.

[0179] Embodiment 25: An apparatus according to any one of embodiments 1 to 24, wherein the cooling fluid is air.

[0180] Embodiment 26: An apparatus according to embodiment 25, wherein the source of the cooling fluid is ambient air.

[0181] Embodiment 27: An apparatus of any of embodiments 1 to 26, wherein the second level of RF power is a power level of zero.

[0182] Embodiment 28: An apparatus according to any one of embodiments 1 to 27, wherein the second speed is a zero speed.

[0183] Embodiment 29: An apparatus, comprising: A dome structure having a flange portion extending radially outward from a sidewall of the dome structure. Including, the dome structure comprises one or more silicon oxide materials; the flange portion has a top surface and a bottom surface opposite the top surface; and a majority of the dome structure having a first transmittance to UV light, and at least the top and bottom surfaces having a second transmittance to UV light that is lower than the first transmittance to UV light; Device.

[0184] Embodiment 30: The device of embodiment 29, the flange portion includes a sub-portion including a first silicon oxide material having a first transmittance to UV light; the top and bottom of the sub-portion are coated with a second silicon oxide material having a second transmittance to UV light; and a second silicon oxide material providing a top surface and a bottom surface; Device.

[0185] Embodiment 31: The device of embodiment 30, wherein the second silicon oxide material is optically opaque to UV light.

[0186] Embodiment 32: A device according to embodiment 31, wherein microbubbles are dispersed within the second silicon oxide material.

[0187] Embodiment 33: The device of any of embodiments 30 to 32, wherein the second silicon oxide material is provided by a thin annular ring comprising the second silicon oxide material fused to the top and bottom of the sub-portion.

[0188] Embodiment 34: The device of embodiment 29, a majority of the dome structure, including the sidewalls, comprising a first silicon oxide material having a first transmittance to UV light; the flange portion includes a second silicon oxide material having a second transmittance to UV light; and The flange portion is a separate component that is fused to the side wall. Device. Embodiment 35: The device of any of embodiments 29-34, further comprising a faceplate, a collar, a first seal, and a second seal; a first seal is compressed between the faceplate and the bottom surface of the flange portion; and a second seal is compressed between the collar and the upper surface of the flange portion; Device.

[0189] Embodiment 36: The apparatus of embodiment 35, wherein the faceplate has a plurality of gas distribution ports extending therethrough.

[0190] Embodiment 37: An apparatus according to embodiment 35 or embodiment 36, wherein the first seal and the second seal are rubber seals.

[0191] Embodiment 38: A device according to any one of embodiments 35 to 37, wherein the collar is a multi-piece collar including multiple segments surrounding the dome structure adjacent to the flange portion.

[0192] Embodiment 39: An apparatus according to any one of embodiments 29 to 38, wherein the faceplate includes one or more internal cooling passages adjacent to the first seal.

[0193] Embodiment 40: An apparatus according to embodiment 39, wherein one or more internal cooling passages are each arranged to follow an arcuate or circular path within the faceplate.

[0194] Embodiment 41: The device of embodiment 40, wherein the bottom surface of the flange portion provides the lowest surface of the dome structure.

[0195] Embodiment 42: A method comprising: fabricating a silicon oxide dome structure having an inlet and an outlet opposite the inlet; etching at least an interior surface of the dome structure to remove at least a first amount of silicon oxide material prior to installing the dome structure in a semiconductor processing tool; A method comprising: Embodiment 43: The method of embodiment 42, wherein the first amount is 0.0003".

[0196] Embodiment 44: The method of embodiment 42, wherein the first amount is 0.0005".

[0197] Embodiment 45: The method of embodiment 42, wherein the first amount is 0.0007".

[0198] Embodiment 46: The method of embodiment 42, wherein the first amount is 0.0009".

[0199] Embodiment 47: The method of embodiment 42, wherein the first amount is 0.001".

[0200] Embodiment 48: The method of embodiment 42, further comprising subjecting at least the inner surface of the dome structure to a flame-polishing operation before etching at least the inner surface of the dome structure.

[0201] Embodiment 49: A method of any of embodiments 42 to 48, wherein etching is carried out by exposing at least the inner surface of the dome structure to a gas containing one or both of atomic fluorine and hydrogen fluoride.

[0202] Embodiment 50: A method of any of embodiments 42 to 49, wherein the etching is carried out by exposing at least the inner surface of the dome structure to a liquid containing hydrogen fluoride.

[0203] The above-described embodiments are, of course, not an exhaustive list of embodiments described in and that will become apparent from this disclosure.

Claims

1. 1. An apparatus for performing semiconductor processing operations, comprising: one or more process stations, each process station comprising: an enclosure defining a cooling volume; a dome structure including a radio wave transparent material, the dome structure having an inlet and an outlet opposite the inlet, the dome structure being disposed within the cooling volume of the enclosure of the process station; one or more radio frequency (RF) coils extending around the dome structure of the process station; a faceplate positioned below the dome structure of the process station and proximate the outlet of the dome structure of the process station; a wafer support positioned to interpose the faceplate of the process station between the wafer support of the process station and the dome structure of the process station; one or more process stations, a cleaning plasma distribution system configured to facilitate direction of a cleaning plasma onto the one or more wafer supports of the one or more process stations; 1. An RF power system configured to be operable in different power modes, the different power modes including a first power mode and a second power mode; the RF power system, in the first power mode, provides at least a first level of RF power to the one or more RF coils of the one or more process stations; the RF power system, in the second power mode, provides a second level of RF power to the one or more RF coils of the one or more process stations; and the second level of RF power is less than the first level of RF power; an RF power system; a cooling system configured to be operable in different cooling modes, the different cooling modes including a first cooling mode and a second cooling mode; the cooling system, in the first cooling mode, cools the one or more dome structures of the one or more process stations at a first rate and using a cooling fluid; and the cooling system, in the second cooling mode, cools the one or more dome structures of the one or more process stations at a second rate slower than the first rate and using the cooling fluid; A cooling system; a controller configured to enable the device to operate in different operational modes, the different operational modes including at least a first operational mode and a second operational mode; when the controller enables the device to operate in the first mode of operation, placing the RF power system in the first power mode and placing the cooling system in the first cooling mode; and causing the cleaning plasma delivery system to direct the cleaning plasma onto one or more of the wafer supports of the one or more process stations and placing the cooling system in the second cooling mode when the controller enables the apparatus to operate in the second operating mode. Controller and 1. An apparatus comprising:

2. 10. The apparatus of claim 1, further comprising a flow regulation system configured to be operable under different flow conditions, the different flow conditions comprising a first flow condition and a second flow condition; the cooling system includes an exhaust system interface and one or more conduits, each conduit fluidly interposed between the exhaust system interface and the cooling volume defined by the enclosure of a corresponding one of the one or more process stations, the exhaust system interface configured to be connected to a facility exhaust system; the flow conditioning system, in the first flow state, allows up to a first level of fluid flow from one or more of the cooling volumes defined by one or more of the enclosures of the one or more process stations and through the exhaust system interface via the one or more conduits; the flow conditioning system, in the second flow state, allows up to a second level of fluid flow from one or more of the cooling volumes defined by one or more of the enclosures of the one or more process stations and through the exhaust system interface via the one or more conduits; the second level of fluid flow is less than the first level of fluid flow; the controller is configured to place the flow regulation system in the first flow state when the device is placed in the first operating mode; and the controller is configured to place the flow regulation system in the second flow state when the device is placed in the second operating mode. Device.

3. 3. The apparatus of claim 2, wherein the second level of fluid flow is less than or equal to 10% of the first level of fluid flow.

4. 3. The apparatus of claim 2, wherein the second level of fluid flow is a zero level of fluid flow.

5. The device according to any one of claims 2 to 4, the flow regulation system includes one or more actuators and one or more movable elements; the one or more actuators are configured to move the one or more movable elements between at least a first position and a second position upon actuation; the one or more movable elements, when in the first position, provide a first level of flow resistance to fluid flow through the one or more conduits; the one or more movable elements, when in the second position, provide a second level of flow resistance to fluid flow through the one or more conduits; the second level of flow resistance is greater than the first level of flow resistance; when the controller places the device in the first operating mode, it controls the one or more actuators so that the one or more movable elements are in the first position; and and when the controller places the device in the second operating mode, the controller controls the one or more actuators so that the one or more movable elements are in the second position. Device.

6. 6. The device of claim 5, wherein each movable element of the one or more movable elements is configured to at least partially block a flow path through at least one of the one or more conduits when in the second position.

7. 6. The apparatus of claim 5, wherein each movable element of the one or more movable elements is configured to completely block a flow path through at least one of the one or more conduits when in the second position.

8. 6. The apparatus of claim 5, the flow regulation system includes one or more outlets, each outlet leading to an alternative flow path separate from one or more flow paths through the one or more conduits; and each movable element of the one or more movable elements is configured to at least partially block at least one of the alternative flow paths when in the first position and to block the at least one of the alternative flow paths to a relatively lesser extent when in the second position; Device.

9. 6. The apparatus of claim 5, the flow regulation system includes one or more outlets, each outlet leading to an alternative flow path separate from one or more flow paths through the one or more conduits; and each movable element of the one or more movable elements is configured to completely block at least one of the alternative flow paths when in the first position and to not block the at least one of the alternative flow paths when in the second position; Device.

10. 10. The apparatus of claim 9, the one or more outlets are fluidly interposed between the exhaust system interface and the ambient environment; and one or more of the alternative flow paths are connected to the ambient environment; Device.

11. 6. The apparatus of claim 5, wherein each movable element is a shutter.

12. The apparatus of claim 11 , wherein the flow conditioning system is disposed at the exhaust system interface.

13. 13. The apparatus of claim 12, the one or more process stations include a plurality of process stations; the exhaust system interface includes a housing having one or more walls with one or more first openings and one or more second openings, each first opening communicating with one of the conduits and each second opening functioning; and the one or more movable elements include a movable element that is a shutter, the shutter being sized to block all of the one or more second openings but not block any of the one or more first openings when in the first position, and to block all of the one or more first openings but not block any of the one or more second openings when in the second position; Device.

14. 10. The apparatus of claim 1, each enclosure having one or more first holes and one or more first fans, each first fan being positioned proximate one of the first holes; the controller is configured to operate the one or more first fans in each enclosure at a first fan speed when the controller places the device in the first operating mode; the controller is configured to operate the one or more first fans in each enclosure at a second fan speed when the controller places the device in the second operating mode; and the second fan speed is slower than the first fan speed; Device.

15. 15. The apparatus of claim 14, each enclosure includes one or more inlet / outlet holes and one or more reversible fans, each reversible fan disposed adjacent one of the inlet / outlet holes and configured to direct the cooling fluid in a first direction through the adjacent inlet / outlet hole when operated in a first directional mode, and to direct the cooling fluid in a direction opposite to the first direction through the adjacent inlet / outlet hole when operated in a second directional mode; the controller is configured to operate the one or more reversible fans in the first directional mode when the controller places the device in the first operational mode; and the controller is configured to operate the one or more reversible fans in the second directional mode when the controller places the device in the second operational mode. Device.

16. 10. The apparatus of claim 1, each enclosure having one or more first holes, one or more first fans, and one or more fan shutters; Each first fan is disposed adjacent to one of the first holes; each fan shutter is configured to be movable between a first configuration and a second configuration to adjust a volumetric flow rate of the cooling fluid into the cooling volume of the enclosure of which the fan shutter forms a part; each fan shutter, in the first configuration, permits up to the first level of volumetric flow of the cooling fluid; each fan shutter, in the second configuration, permits up to the second level of volumetric flow of the cooling fluid; the first level of the volumetric flow rate is greater than the second level of the volumetric flow rate; the controller is configured to place the one or more fan shutters in the first configuration when the device is placed in the first operating mode; and the controller is configured to place the one or more fan shutters in the second configuration when the controller places the device in the second operating mode. Device.

17. 10. The apparatus of claim 1, the cooling system includes one or more heaters configured to be operable in different heating states, the different heating states including a first heating state and a second heating state; each heater is associated with one of the one or more process stations and configured to deliver a first amount of heating power to the dome structure of that process station when in the first heating state and to deliver a second amount of heating power to the dome structure of that process station when in the second heating state; the first amount of heating power is less than the second amount of heating power; and the controller is configured to place the one or more heaters in the first heating state when the cooling system is in the first cooling mode and in the second heating state when the cooling system is in the second cooling mode. Device.

18. 10. The apparatus of claim 1, the cooling system includes one or more heaters configured to be operable in different heating states, the different heating states including a first heating state and a second heating state; each heater is associated with one of the one or more process stations and is configured to deliver a first amount of heating power to the cooling fluid when in a first heating state before the cooling fluid is flowed through the cooling volume of that process station, and to deliver a second amount of heating power to the cooling fluid when in a second heating state before the cooling fluid is flowed through the cooling volume of that process station; the first amount of heating power is less than the second amount of heating power; and the one or more heaters are in the first heating state when the cooling system is in the first cooling mode and in the second heating state when the cooling system is in the second cooling mode; Device.

19. 1. An apparatus for use in semiconductor processing, said apparatus comprising: A dome structure having a flange portion extending radially outward from a sidewall of the dome structure. Including, the dome structure comprises one or more silicon oxide materials; the flange portion has a top surface and a bottom surface opposite the top surface; and a majority of the dome structure has a first transmittance to UV light, and at least the top surface and the bottom surface have a second transmittance to UV light that is lower than the first transmittance to UV light; Device.

20. 1. A method of manufacturing a dome structure for use in semiconductor processing equipment, comprising: fabricating a silicon oxide dome structure having an inlet and an outlet opposite the inlet; etching at least an interior surface of the dome structure to remove at least a first amount of silicon oxide material prior to installing the dome structure in a semiconductor processing tool; A manufacturing method comprising:

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