Electrode design for bipolar electrostatic chucks

Abstract

An exemplary substrate support assembly may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The assembly may include a support stem coupled to the electrostatic chuck body. The assembly may include a first bipolar electrode embedded within the electrostatic chuck body. The assembly may include a second bipolar electrode embedded within the electrostatic chuck body. The entire second bipolar electrode may be radially inward of at least a portion of the first bipolar electrode. The first and second bipolar electrodes may be coaxial with each other. Each of the first and second bipolar electrodes may be coupled to at least one RF power source. Each of the first and second bipolar electrodes may be coupled to at least one DC power source.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 18 / 158,379, entitled "BIPOLAR ELECTROSTATIC CHUCK ELECTRODE DESIGNS," filed Jan. 23, 2023, the entire contents of which are incorporated herein by reference.

[0002] Technical Field

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. In particular, the present technology relates to substrate support assemblies and other semiconductor processing equipment. [Background technology]

[0003]

[0003] Integrated circuits can be fabricated through processes that produce intricately patterned layers of material on a substrate surface. Producing patterned materials on a substrate requires controlled methods for forming and removing material. The temperatures at which these processes are performed can have a direct impact on the final product. For example, higher temperatures can result in higher deposition rates. Thus, temperature non-uniformity across the substrate support can cause problems with film thickness uniformity across the wafer. Therefore, there is a need for improved systems and methods that can be used to maintain a uniform temperature across the substrate support to produce high quality devices and structures. The present technology addresses these and other needs. Summary of the Invention

[0004] An exemplary substrate support assembly may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The assembly may include a support stem coupled to the electrostatic chuck body. The assembly may include a first bipolar electrode embedded within the electrostatic chuck body. The assembly may include a second bipolar electrode embedded within the electrostatic chuck body. The entire second bipolar electrode may be radially inward of at least a portion of the first bipolar electrode. The first and second bipolar electrodes may be coaxial with each other. Each of the first and second bipolar electrodes may be coupled to at least one RF power source. Each of the first and second bipolar electrodes may be coupled to at least one DC power source.

[0005] In some embodiments, the assembly may include a ring electrode disposed around the first bipolar electrode. The ring electrode may be DC floated and RF powered. The assembly may include a spoke connector disposed within the electrostatic chuck body. The spoke connector may couple the ring electrode to an RF power source. Individual spokes of the spoke connector may have a width of at least 5 mm. The first bipolar electrode and the second bipolar electrode may have substantially the same area. The first electrode may have a generally ring-shaped configuration. The second electrode may have a generally circular configuration. The assembly may include a ring electrode disposed around the first bipolar electrode. The ring electrode may be DC floated and RF powered. The ring electrode may be coaxial with the first bipolar electrode. The second electrode may include a first portion and a second portion coupled to each other and separated by a gap. A portion of the first electrode may extend into the gap formed between the first portion and the second portion.

[0006] Some embodiments of the present technology may include a substrate support assembly that may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The assembly may include a support stem coupled to the electrostatic chuck body. The assembly may include a first bipolar electrode embedded within the electrostatic chuck body. The assembly may include a second bipolar electrode embedded within the electrostatic chuck body. The central axes of the first and second bipolar electrodes may be radially offset from one another. Each of the first and second bipolar electrodes may be coupled to at least one RF power source. Each of the first and second bipolar electrodes may be coupled to at least one DC power source. The assembly may include an RF powered electrode having an outermost edge extending beyond the peripheral edges of the first and second bipolar electrodes. The assembly may include spoke-like connectors disposed within the electrostatic chuck body. The spoke-like connectors may couple the RF powered electrode to the RF power source.

[0007] In some embodiments, each of the first and second bipolar electrodes may be generally semicircular in shape. Each of the first and second bipolar electrodes may include a wedge-shaped configuration that is less than 180 degrees of a circle. The assembly may include a third bipolar electrode having a wedge-shaped configuration. The assembly may include a fourth bipolar electrode having a wedge-shaped configuration. The polarity of the bipolar electrodes may alternate with adjacent bipolar electrodes. The number of bipolar electrodes having a wedge-shaped configuration may be an even number.

[0008] Some embodiments of the present technology may include a substrate support assembly that may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The assembly may include a support stem coupled to the electrostatic chuck body. The assembly may include a first bipolar electrode embedded within the electrostatic chuck body. The assembly may include a second bipolar electrode embedded within the electrostatic chuck body. The second electrode may include a first portion and a second portion coupled to each other and separated by a gap. A portion of the first electrode may extend into the gap formed between the first portion and the second portion. Each of the first bipolar electrode and the second bipolar electrode may be coupled to at least one RF power source. Each of the first bipolar electrode and the second bipolar electrode may be coupled to at least one DC power source.

[0009] In some embodiments, the entire second bipolar electrode may be radially inward of at least a portion of the first bipolar electrode. The assembly may include an annular electrode disposed around the first bipolar electrode and the second bipolar electrode. The annular electrode may be DC floating and RF powered. The first bipolar electrode may include a first outer portion and a first inner portion connected via a first neck. The second bipolar electrode may include a second outer portion and a second inner portion connected via a second neck. The second outer portion may be arranged to alternate between the first outer portion and the first inner portion. The thickness of each of the first neck and the second neck may be at least 1.5 times the width of the smaller of the first inner portion and the first outer portion. Each of the first bipolar electrode and the second bipolar electrode may include a helical shape. The width of each segment of the helical shape may be at least 20 mm.

[0010] Such technology may offer numerous advantages over conventional systems and techniques. For example, embodiments of the present technology may provide a substrate support that may provide more uniform current flow across the chuck electrode, which may help reduce hot spots due to higher resistive heating. This may help improve temperature uniformity across the substrate support, which in turn may help improve film thickness uniformity on the wafer. Additionally, the substrate support may maintain bipolar chucking while supporting RF modulation. These and other embodiments, along with many of their advantages and features, are described in more detail below in conjunction with the description and accompanying drawings. [Brief explanation of the drawings]

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings.

[0012] [Figure 1] FIG. 1 is a top view of an exemplary processing system, in accordance with some embodiments of the present technique. [Figure 2]

[0013] FIG. 2 is a schematic cross-sectional view of an exemplary plasma system, in accordance with some embodiments of the present technique. [Figure 3]

[0014] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 4A]

[0015] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 4B]

[0016] 1 is a schematic partial cross-sectional view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 4C]

[0017] 1 is a schematic top view of an exemplary spoke-like connector for a substrate support assembly, in accordance with some embodiments of the present technique; [Figure 5A]

[0018] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 5B]

[0019] 1 is a schematic partial cross-sectional view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 6A]

[0020] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 6B]

[0021] 1 is a schematic partial cross-sectional view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 7]

[0022] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 8]

[0023] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 9]

[0024] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 10A]

[0025] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 10B]

[0026] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 10C]

[0027] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 10D]

[0028] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 11]

[0029] 1 is a schematic top view of an electrode arrangement for an exemplary substrate support assembly, in accordance with some embodiments of the present technique;

[0013]

[0030] Some drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and are not to be considered to scale unless specifically stated. Additionally, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include exaggerated content for illustrative purposes.

[0014]

[0031] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral, regardless of the letter. DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0032] Plasma-enhanced deposition processes can excite one or more constituent precursors to promote film formation on the substrate. These formed films can be produced under conditions that induce stress in the substrate. Electrostatic chucks can be used to create a clamping action on the substrate to overcome warpage stresses. However, as semiconductor processing continues to increase in precision and device sizes decrease, chucking can contribute to processing issues. For example, uneven current flow, especially in narrow portions of the electrode through which most of the current passes, can cause temperature nonuniformities (e.g., hot spots) across the substrate support. These hot spots can cause high deposition rates near such regions, which can lead to film nonuniformity problems on the wafer. In addition, traditional bipolar electrode designs used for chucking, such as two semicircular electrodes extending to or beyond the wafer edge, can cause undesirable generation of DC plasma, discharges (e.g., arcing), and / or discoloration of the substrate support, especially on the side of the positive DC charge.

[0016]

[0033] The present technology overcomes these challenges by using a substrate support assembly with bipolar chucking capabilities, which may include an electrode configuration that prevents current concentrations that can increase resistive heating and create hot spots on the substrate support surface. Additionally, the present technology may implement an RF electrode configuration that reduces problems associated with DC currents (especially opposing DC currents) existing radially outward from the wafer. The RF electrode configuration promotes a more uniform RF magnetic field across the wafer, including the wafer edge region, which in turn facilitates more uniform plasma deposition, while reducing undesirable generation of DC plasma, discharges (e.g., arcing), and / or discoloration of the substrate support.

[0017]

[0034] While the following disclosure routinely identifies specific deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition, etch, and cleaning chambers, as well as to processes that may occur within the described chambers. Accordingly, the present technology should not be considered limited to use with only these particular deposition processes or chambers. After describing one possible system and chamber that may include a pedestal according to embodiments of the present technology, the present disclosure describes additional modifications and adaptations to this system according to embodiments of the present technology.

[0018]

[0035] 1 illustrates a top view of one embodiment of a processing system 100 for deposition, etch, bake, and cure chambers, according to an embodiment. In the figure, a pair of front-opening integrated pods (FOUPs) 102 supply substrates of various sizes that are received by a robotic arm 104 and placed in a low-pressure holding area 106. The substrates are then placed in one of the substrate processing chambers 108a-f, positioned in tandem sections 109a-c. A second robotic arm 110 can be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be equipped to perform many substrate processing steps, including the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and annealing, ashing, etc.

[0019]

[0036] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes can be performed in chambers separate from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by system 100.

[0020]

[0037] 2 is a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 illustrates a pair of processing chambers 108 that may be installed within one or more of the tandem sections 109 described above, which may include a substrate support assembly in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include identical components.

[0021]

[0038] For example, processing region 220B, whose components may also be included in processing region 220A, may include a pedestal 228 disposed within the processing region through a passageway 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, such as a resistive heating element, which may heat and control the substrate temperature to a desired process temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly or any other heating device.

[0022]

[0039] The body of the pedestal 228 may be coupled to the stem 226 by a flange 233. The stem 226 may electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 may include a driver system that controls the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface that provides power to the pedestal 228. The power box 203 may also include an interface for a power meter and a thermometer, such as a thermocouple interface. The stem 226 may include a base assembly 238 adapted to detachably couple to the power box 203. A peripheral ring 235 is shown above the power box 203. In some embodiments, the peripheral ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0023]

[0040] A rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing region 220B and may be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively space the substrate 229 from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to transfer substrates into and out of the processing region 220B through the substrate transfer port 260.

[0024]

[0041] A chamber lid 204 can be coupled to the top of the chamber body 202. The lid 204 can house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 can include a precursor inlet passage 240 that can deliver reactant precursors and cleaning precursors into the processing region 220B through a dual channel showerhead 218. The dual channel showerhead 218 can include an annular base plate 248 having a shield plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 can be coupled to the dual channel showerhead 218 and can provide power to the dual channel showerhead 218 to facilitate generation of a plasma region between the faceplate 246 and the pedestal 228 of the dual channel showerhead 218. In some embodiments, the RF source can be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the lid 204 and the dual channel showerhead 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 may be disposed on the outer edge of the pedestal 228 to engage the pedestal 228.

[0025]

[0042] Optional cooling channels 247 may be formed in the annular base plate 248 of the gas distribution system 208 to cool the annular base plate 248 during operation. A heat transfer fluid, such as water, ethylene glycol, or gas, may be circulated through the cooling channels 247 to maintain the base plate 248 at a predetermined temperature. A liner assembly 227 may be positioned within the processing region 220B adjacent to the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment within the processing region 220B. The liner assembly 227 may include a circumferential pumping cavity 225 that may be coupled to a pumping system 264 configured to exhaust gases and byproducts from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 may be formed in the liner assembly 227. The exhaust outlet 231 may be configured to allow gas to flow from the processing region 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0026]

[0043] 3 is a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300 in accordance with some embodiments of the present technique. FIG. 3 may include one or more components described above in connection with FIG. 2 and may provide additional details regarding the chamber. Chamber 300 may be used to perform semiconductor processing steps, including the deposition of a stack of dielectric materials described above. Chamber 300 may represent a partial view of a processing region of a semiconductor processing system and may not include all of the components, such as the additional lid stack components described above, that are understood to be incorporated in some embodiments of chamber 300.

[0027]

[0044] As mentioned above, FIG. 3 may depict a portion of a processing chamber 300. The chamber 300 may include a showerhead 305 and a substrate support 310. The showerhead 305 and the substrate support 310, together with the chamber sidewalls 315, may define a substrate processing region 320 in which a plasma may be generated. The substrate support assembly may include an electrostatic chuck body 325, which may include one or more components embedded or disposed within the body. Components embedded within the top puck may not be exposed to the processing material in some embodiments and may be retained entirely within the chuck body 325. The electrostatic chuck body 325 may define a substrate support surface 327 and may be characterized by a thickness and a length or diameter depending on the particular geometry of the chuck body. In some embodiments, the chuck body may be elliptical and may be characterized by one or more radial dimensions from a central axis through the chuck body. It should be understood that the top puck may be of any shape or size and, when referring to radial dimensions, may define any length from the center of the chuck body.

[0028]

[0045] The electrostatic chuck body 325 can be coupled to a stem 330, which can support the chuck body and can include channels for delivering and receiving electrical and / or fluid lines that can connect to internal components of the chuck body 325. While the chuck body 325 can include associated channels or components for operation as an electrostatic chuck, in some embodiments, the assembly can operate as or include components for a vacuum chuck or any other type of chucking system. The stem 330 can be coupled to the chuck body at a second surface of the chuck body opposite the substrate support surface. The electrostatic chuck body 325 can include a first bipolar electrode 335a, which can be embedded within the chuck body proximate the substrate support surface. The electrode 335a can be electrically coupled to a DC power supply 340a. The power supply 340a can be configured to provide energy or voltage to the conductive chuck electrode 335a. It may operate to form a plasma of a precursor within the processing region 320 of the semiconductor processing chamber 300, but may also sustain other plasma operations. For example, the electrode 335a may be a chucking mesh that acts as an electrical ground for a capacitive plasma system that includes an RF source 307 electrically coupled to the showerhead 305. For example, the electrode 335a may also operate as an electrical bias to the substrate to provide electrostatic clamping of the substrate to the substrate support surface while operating as a ground path for RF power from the RF source 307. The power supply 340a may include filters, power sources, and other electrical components configured to provide a chucking voltage.

[0029]

[0046] The electrostatic chuck body may further include a second bipolar electrode 335b, which may also be embedded within the chuck body proximate the substrate support surface. The electrode 335b may be electrically coupled to a DC power supply 340b. The power supply 340b may be configured to provide energy or voltage to the conductive chuck electrode 335b. Additionally, details regarding electrical components and bipolar chucks according to some embodiments are further described below, any of which designs may be implemented in the processing chamber 300. For example, additional plasma-related power supplies or components may be incorporated, as further described below.

[0030]

[0047] During operation, a substrate may at least partially contact the substrate support surface of the electrostatic chuck body. Such contact may create a contact gap, essentially creating a capacitive effect between the surface of the pedestal and the substrate. A voltage may be applied to the contact gap, thereby generating an electrostatic force for chucking. Power supplies 340a and 340b may provide charges that transfer from the electrodes to the substrate support surface, and the charges may accumulate on the substrate support surface. This creates a charge layer on the substrate with opposing Coulombic attractive forces, electrostatically holding the substrate against the substrate support surface of the chuck body. Such charge transfer may be generated by current flowing through the dielectric material of the chuck body based on the finite resistance within the dielectric for Johnsen-Rahbek-type chucking, which may be used in some embodiments of the present technology.

[0031]

[0048] The chuck body 325 may also define a recessed region 345 within the substrate support surface, which may provide a recessed pocket in which a substrate may be placed. The recessed region 345 may be formed in an interior region of the top puck and may be configured to receive a substrate for processing. The recessed region 345 may encompass a central region of the electrostatic chuck body, as shown, and may be sized to accommodate various substrate sizes. The substrate may be mounted within the recessed region and accommodated by an outer region 347 that may surround the substrate. In some embodiments, the height of the outer region 347 may be such that the substrate is at or below the surface height of the substrate support surface at the outer region 347. The recessed surface may control edge effects during processing, which may improve deposition uniformity across the substrate in some embodiments. In some embodiments, an edge ring may be disposed on the outer edge of the top puck and may at least partially define a recess in which a substrate may be mounted. In some embodiments, the surface of the chuck body may be substantially planar, and the edge ring may completely define a recess in which a substrate may be mounted.

[0032]

[0049] In some embodiments, the electrostatic chuck body 325 and / or stem 330 can be insulating or dielectric materials. For example, oxides, nitrides, carbides, and other materials can be used to form the components. Exemplary materials can include ceramics including aluminum oxide, aluminum nitride, silicon carbide, tungsten carbide, and any other metal or transition metal oxide, nitride, carbide, boride, or titanate, as well as combinations of these and other insulating or dielectric materials. Different grades of ceramic materials can be used to provide a composite configured to operate over a specific temperature range; therefore, in some embodiments, different ceramic grades of the same material can be used for the top puck and stem. In some embodiments, dopants can be incorporated to tailor electrical properties. Exemplary dopant materials can include yttrium, magnesium, silicon, iron, calcium, chromium, sodium, nickel, copper, zinc, or any number of other elements known to be incorporated within ceramic or dielectric materials.

[0033]

[0050] The electrostatic chuck body 325 may further include an embedded heater 350 contained within the chuck body. The heater 350 may, in embodiments, include a resistive heater or a fluid heater. In some embodiments, the electrode 335 may operate as a heater, but separating these operations allows for more individual control and may increase the heater's coverage area while limiting the area for plasma formation. The heater 350 may include a polymer heater bonded or coupled to the chuck body material, or a conductive element may be embedded within the electrostatic chuck body and configured to receive an electric current, such as an AC current, to heat the top puck. The electric current may be delivered through the stem 330 via a path similar to the DC power described above. The heater 350 may be coupled to a power source 365 capable of providing an electric current to the resistive heating element to facilitate heating of the associated chuck body and / or substrate. In embodiments, the heater 350 can include multiple heaters, each associated with a zone of the chuck body, and thus an exemplary chuck body can include an equal number of zones or more zones than heaters. In some embodiments, the chucking mesh electrode 335 can be positioned between the heater 350 and the substrate support surface 327, and in some embodiments, a distance can be maintained between the electrode within the chuck body and the substrate support surface, as described further below.

[0034]

[0051] The heater 350 can regulate the temperature across the electrostatic chuck body 325 and a substrate present on the substrate support surface 327. The heater can have an operating temperature range that heats the chuck body and / or substrate to about 100° C. or higher, and the heater can be configured to heat to about 125° C. or higher, about 150° C. or higher, about 175° C. or higher, about 200° C. or higher, about 250° C. or higher, about 300° C. or higher, about 350° C. or higher, about 400° C. or higher, about 450° C. or higher, about 500° C. or higher, about 550° C. or higher, about 600° C. or higher, about 650° C. or higher, about 700° C. or higher, about 750° C. or higher, about 800° C. or higher, about 850° C. or higher, about 900° C. or higher, about 950° C. or higher, about 1000° C. or higher, or higher. The heater may also be configured to operate within any range between any two of the numbers listed herein, or within a smaller range within any of these ranges. In some embodiments, the chuck heater may be operated to maintain the substrate temperature above at least 500° C. during the deposition process.

[0035]

[0052] FIG. 4A is a schematic top view of an electrode arrangement 400 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. The electrodes in arrangement 400 can be any of the electrodes previously described or any number of other pedestals or chucks, such as may be included in substrate support assembly 310. The electrodes may operate as an electrostatic chuck, as described above and further below. As shown, electrode arrangement 400 can include a first bipolar electrode 405 and a second bipolar electrode 410. The bipolar electrodes can be embedded in a puck or chuck body, such as an aluminum nitride-containing ceramic, as described above, and can feature any of the features, configurations, or characteristics described above for any substrate support. In some embodiments, bipolar electrodes 405, 410 can be embedded between a heater 455 (shown in FIG. 4B) and a substrate support surface, although in other embodiments, bipolar electrodes 405, 410 can be positioned elsewhere relative to the heater, or the heater can be omitted entirely.

[0036]

[0053] The first bipolar electrode 405 and the second bipolar electrode 410 may each include a mesh material that may be substantially coplanar across both electrodes within the electrostatic chuck. The mesh material may be characterized by any number of shapes or geometries. As shown, the first bipolar electrode 405 has a generally annular shape and extends around the generally circular second bipolar electrode 410; however, other shapes may be used, such as rectangular or any other shape, which may be determined at least in part by the geometry of the substrate. The entire second bipolar electrode 410 may be radially inward of the first bipolar electrode 405. In other words, the first bipolar electrode 405 may completely surround the second bipolar electrode 410. In some embodiments, the two bipolar electrodes 405, 410 may be coaxial with each other. The second bipolar electrode 410 can have a diameter of between about 7 inches and 12 inches, between about 8 inches and 11 inches, or between about 9 inches and 10 inches, although other diameters are possible in some embodiments. The first bipolar electrode 405 can have an outer diameter of between about 12 inches and 14 inches, between about 12.25 inches and 13.75 inches, between about 12.5 inches and 13.5 inches, or between 12.75 inches and 12.25 inches. For example, the mesh of the first bipolar electrode 405 can have an outermost edge that extends radially outward beyond the outermost edge of the substrate seat defined by the substrate support surface (which coincides with the outermost edge of the substrate to be processed and can be formed from a recessed area similar to recessed area 345). The first bipolar electrode 405 and the second bipolar electrode 410 can be separated by a gap 415. The gap 415 can be between about 1 mm and 5 mm, between about 2 mm and 4 mm, or about 3 mm in some embodiments.

[0037]

[0054] The electrode leads can couple one or more power sources to the mesh of each of the first bipolar electrode 405 and the second bipolar electrode 410. For example, in some embodiments, the second bipolar electrode 410 can be coupled to one or more power sources at one or more locations 420, which can be proximate the center of the second bipolar electrode 410, or at any other location along the mesh. The first bipolar electrode 405 can be coupled to one or more power sources at one or more locations around the circumference of the first bipolar electrode 405. For example, as shown, the first bipolar electrode 405 can be coupled to power sources at multiple locations 425 spaced at equal angular intervals around the first bipolar electrode 405. In other embodiments, the one or more locations 425 can be positioned at irregular intervals around the first bipolar electrode 405. The first bipolar electrode 405 can include any number of locations 425. For example, the first bipolar electrode 405 may include one or more positions, two or more positions, three or more positions, four or more positions, five or more positions, six or more positions, seven or more positions, eight or more positions, nine or more positions, ten or more positions, eleven or more positions, twelve or more positions, or more than one position.

[0038]

[0055] In some embodiments, the chuck body may include a spoke-like connector 430 embedded and / or otherwise disposed within the electrostatic chuck body to facilitate coupling between the first bipolar electrode 405 and one or more power sources. For example, the spoke-like connector 430 may be embedded within the chuck body between the substrate support surface and the heater. An electrical connection may extend through a stem or shaft of the chuck body and be coupled to a hub 435 of the spoke-like connector 430, and multiple conductive elements 450 may be coupled to the first bipolar electrode 405. As best shown in FIG. 4C , the spoke-like connector 430 may include multiple spokes 440 extending radially outward from the hub 435. Each spoke 440 may extend radially outward a sufficient distance such that an outer end of each spoke 440 may be positioned beneath a portion of the first bipolar electrode 405. In some embodiments, each spoke 440 may extend to and couple to a rim 445 disposed below the first bipolar electrode 405. The outer ends of the spokes 440 and / or rim 445 may include a plurality of conductive elements 450, such as pins, straps, and / or other connecting elements, that extend upward to couple to the first bipolar electrode 405 at location 425 and may electrically connect the first bipolar electrode 405 to one or more power sources. In some embodiments, the outer ends / rims 445 of the spoke-like connectors 430 may have the same outer diameter as the first bipolar electrode 405, while in other embodiments, the outer diameter of the outer ends / rims 445 may be larger or smaller than the diameter of the first bipolar electrode 405, and a portion of the rim 445 may be directly below the first bipolar electrode 405. In some embodiments, the hub 435 can have a diameter of between about 0.5 inches and 3.5 inches, between about 1 inch and 3 inches, or between about 1.5 inches and 2.5 inches. In some embodiments, one or more of the leads connecting to the location 420 of the second bipolar electrode 410 can extend through the hub 435. For example, the hub 435 can define one or more apertures that extend through the thickness of the hub 435, allowing leads, rods, and / or other electrical connectors to pass through the hub 435 and connect to the second bipolar electrode 410.

[0039]

[0056] The spoked connector 430 may include any number of spokes 440. For example, in some embodiments, the spoked connector 430 may include three or more spokes, four or more spokes, five or more spokes, six or more spokes, seven or more spokes, eight or more spokes, or more. In some embodiments, the number of spokes 440 may match the number of conductive elements 450 and / or locations 425, while in other embodiments, there may be more or fewer spokes 440 than conductive elements 450 and / or locations 425. In some embodiments, each spoke 440 may have a constant width from the hub 435 to the outer end / rim 445. In other embodiments, the width of each spoke 440 may vary along the length of the spoke 440. For example, each spoke 440 may be narrower near the hub 435 and gradually widen to a wider portion near the outer end / rim 445. In some embodiments, the width (or minimum width) of each spoke 440 may be at least 5 mm, e.g., between about 5 mm and 40 mm, between about 10 mm and 35 mm, between about 15 mm and 30 mm, or between about 20 mm and 25 mm, although wider spokes (e.g., greater than 40 mm, greater than 45 mm, greater than 50 mm, greater than 60 mm, greater than 70 mm, greater than 80 mm, greater than 90 mm, greater than 100 mm, or wider) are possible in some embodiments. As the number of spokes increases, the width of each spoke decreases because the amount of current distributed through each spoke is divided among the additional spokes, which may reduce the likelihood of resistive heating hot spots due to high current loads at a given location. In embodiments in which the spokes 440 gradually widen outward from the hub 435, the outer end of each spoke 440 may be about 1.5 to 10 times wider than the inner end of the spoke 440, or about 2 to 8 times, about 2.5 to 7 times, 3 to 6 times, or 4 to 5 times wider than the inner end of the spoke 440.

[0040]

[0057] In some embodiments, the spoke-like connectors 430 (e.g., the hub 435, the spokes 440, and / or the rim 445) can be positioned below the first bipolar electrode 405 and / or the second bipolar electrode 410 by a distance between about 1 mm and 10 mm, between about 2 mm and 9 mm, between about 3 mm and 8 mm, between about 4 mm and 7 mm, or between about 5 mm and 6 mm. In some embodiments, the heater 455 can be spaced (e.g., below) the spoke-like connectors 430 by between about 1 mm and 15 mm, between about 2 mm and 13 mm, between about 3 mm and 11 mm, between about 4 mm and 9 mm, or between about 5 mm and 7 mm. Distances less than these ranges may result in excessive RF and / or DC current leakage, while greater distances may require larger / more powerful heaters, which may increase cost and power usage.

[0041]

[0058] Each of the electrodes can be coupled to one or more power sources, as can be seen in FIG. 4B . FIG. 4B is a schematic partial cross-sectional view of an electrode arrangement 400 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. As shown, the arrangement 400 can include a first bipolar electrode 405 and a second bipolar electrode 410. Each bipolar electrode can be coupled to one or more power sources as described above, and while FIG. 4B shows an exemplary coupling configuration, it should be understood that any number of electrode coupling configurations can be used. For example, the first bipolar electrode 405 can be coupled to a first DC power source 485 (e.g., via a spoke-like connector 430), and the second bipolar electrode 410 can be coupled to a second DC power source 490 (e.g., via a DC rod or lead extending to the second bipolar electrode 410). Either power source can operate in a positive or negative voltage configuration. This can enable the two bipolar electrodes to operate with opposite polarities to chuck a wafer. For example, the first bipolar electrode 405 can be supplied with a negative current, while the second bipolar electrode 410 can be supplied with a positive current of equal magnitude, or vice versa. In some embodiments, the polarity of the current supplied to each bipolar electrode can be switched during processing and can be increased or decreased in either direction, for example, to provide electrostatic chucking. Each power supply can be floating (ungrounded), thereby eliminating relative voltage differences between the electrode and the chamber surroundings, such as the chamber sidewalls. In some embodiments, one or more RF power supplies can be incorporated. For example, RF power supply 495 can be coupled to the first bipolar electrode 405 (e.g., via the spoke connector 430 or another spoke connector) and the second bipolar electrode 410 (e.g., via an RF rod extending to the second bipolar electrode 410). As described below, separate RF power supplies can be coupled to each of the bipolar electrodes, although in some embodiments, a single power supply can be used based on the configuration of the electrodes. Regardless of whether a single power source or multiple power sources are coupled to the bipolar electrodes 405, 410, the circuitry coupled between each bipolar electrode and each power source may be the same or different for each bipolar electrode 405, 410.For example, the circuitry may include one or more components, such as capacitors, that allow the amount of current supplied to each of the bipolar electrodes 405, 410 to be independently controlled, such that the current supplied to each bipolar electrode can be used as a tuning knob to further adjust the RF power (and / or clamping force), which allows the current to each bipolar electrode to adjust the deposition rate at a given portion of the substrate.

[0042]

[0059] During operation, by using a mesh that extends radially beyond the substrate seat and the edge of the wafer, RF current can be delivered more uniformly across the wafer, including the edge region of the wafer, facilitating more uniform plasma deposition across the wafer. In some embodiments, the first bipolar electrode 405 and the second bipolar electrode 410 can have substantially the same area (e.g., within 10%, within 5%, within 3%, within 1%, or less).

[0043]

[0060] The present technology may similarly encompass other bipolar chuck configurations that may be incorporated within any of the substrate supports described above. FIG. 5A is a schematic top view of an electrode arrangement 500 for an exemplary substrate support assembly in accordance with some embodiments of the present technology. The electrodes in arrangement 500 may be any of the electrodes described above or any number of other pedestals or chucks, such as may be included in substrate support assembly 310. The electrodes may operate as electrostatic chucks, as described above and further below. As shown, electrode arrangement 500 may include a first bipolar electrode 505 and a second bipolar electrode 510. The electrodes may be embedded in a puck or chuck body, such as a ceramic including aluminum nitride, as described above, and may feature any of the features, configurations, or characteristics described above for any of the substrate supports. In some embodiments, the bipolar electrodes 505, 510 may be embedded between a heater 555 (shown in FIG. 5B) and a substrate support surface, while in other embodiments, the electrodes 405, 410 may be positioned elsewhere relative to the heater, or the heater may be omitted entirely.

[0044]

[0061] The first bipolar electrode 505 and the second bipolar electrode 510 may each comprise a mesh material that may be substantially coplanar across both electrodes within the electrostatic chuck. The mesh material may be characterized by any number of shapes or geometries. As shown, the first bipolar electrode 505 has a generally annular shape and extends around the generally circular second bipolar electrode 510, although other shapes may be used, such as rectangular or any other shape that may be determined at least in part by the geometry of the substrate. The entire second bipolar electrode 510 may be radially inward of the first bipolar electrode 505, and the two bipolar electrodes 505, 510 may be coaxial in some embodiments. The second bipolar electrode 510 may have a diameter between about 5 and 10 inches, between about 6 and 9 inches, or between about 7 and 8 inches, although other diameters are possible in some embodiments. The first bipolar electrode 505 can have an outer diameter of between about 10 and 14 inches, between about 10.5 and 13.5 inches, between about 11 and 13 inches, or between 11.5 and 12.5 inches. The first bipolar electrode 505 and the second bipolar electrode 510 can be radially separated by a gap 515. The gap 515 can be between about 1 mm and 5 mm, between about 2 mm and 4 mm, or about 3 mm in some embodiments.

[0045]

[0062] The electrode leads can couple one or more power sources to the mesh of each of the first bipolar electrode 505 and the second bipolar electrode 510. For example, in some embodiments, the second bipolar electrode 510 can be coupled to one or more power sources at one or more locations 520, which can be proximate the center of the second bipolar electrode 510, or at any other location along the mesh. The first bipolar electrode 505 can be coupled to one or more power sources at one or more locations around the circumference of the first bipolar electrode 505. For example, as shown, the first bipolar electrode 505 can be coupled to power sources at multiple locations 525 spaced at equal angular intervals around the first bipolar electrode 505. In other embodiments, the one or more locations 525 can be positioned at irregular intervals around the first bipolar electrode 505. The first bipolar electrode 505 can include any number of locations 525. For example, the first bipolar electrode 505 may include one or more positions, two or more positions, three or more positions, four or more positions, five or more positions, six or more positions, seven or more positions, eight or more positions, nine or more positions, ten or more positions, eleven or more positions, twelve or more positions, or more positions.

[0046]

[0063] In some embodiments, the chuck body may include spoke connectors 530 embedded and / or otherwise disposed within the electrostatic chuck body to facilitate coupling between the first bipolar electrode 505 and one or more power sources. The spoke connectors 530 may be similar to the spoke connectors 430 and may include any of the features described in connection with the spoke connectors 430. An electrical connection may extend through the stem or shaft of the chuck body and couple to the hub of the spoke connectors 530.

[0047]

[0064] As shown, in some embodiments, the arrangement 500 may include an RF electrode 560 that may be located or positioned radially outward from the first bipolar electrode 505 and the second bipolar electrode 510 and may extend around the bipolar electrodes as shown. The RF electrode 560 may be coaxial with one or both of the first bipolar electrode 505 and the second bipolar electrode 510. The RF electrode 560 may have a generally annular mesh with an outermost edge that extends beyond the peripheral edges of the first bipolar electrode 505 and the second bipolar electrode 510. For example, the outer diameter of the RF electrode 560 may be between about 12.5 inches and 16 inches, between about 13 inches and 15.5 inches, between about 13.5 inches and 15 inches, or between about 14 inches and 14.5 inches. In some embodiments, the mesh of the RF electrode 560 may be disposed below the mesh of the bipolar electrodes. In other embodiments, the mesh of the RF electrode 560 may be substantially coplanar with the mesh of the bipolar electrodes. In such embodiments, the diameter of the inner opening of the mesh can be sized to minimize or eliminate a gap between the inner edge of the mesh of the RF electrode 560 and the outer edge of the first bipolar electrode 505. For example, the inner edge of the mesh of the RF electrode 560 can be less than 5 mm, less than 4 mm, less than 3 mm, less than 2 mm, less than 1 mm, or closer than the outer edge of the first bipolar electrode 505. In some embodiments, the RF electrode 560 can be included, for example, under the outer region 347 or around the edge region of the substrate support. Electrode leads can couple RF power to the RF electrode 560 at one or more locations 565, as shown. While four such lead locations are illustrated, embodiments can include any number of leads that ensure uniform delivery to the electrode. Leads can be provided at regular intervals around the RF electrode 560 to provide a symmetrical arrangement that can promote uniform RF flow across the substrate support surface. In some embodiments, the lead connections can be provided using additional spoke connectors 570 that can have a structure similar to spoke connectors 530, but that extend radially outward to be aligned with RF electrode 560. RF electrode 560 can be coupled to an RF power source, but can be DC floating (e.g., not coupled to a DC power source).By DC floating the RF electrode 560, the RF electrode 560 helps confine the DC potential to the area under the wafer, which may help reduce or eliminate DC plasma generation, DC discharge, and / or discoloration of the substrate support.

[0048]

[0065] In some embodiments, the spoke connector 530 can be positioned below the first bipolar electrode 505 and / or the second bipolar electrode 510 by a distance between about 1 mm and 8 mm, between about 2 mm and 7 mm, between about 3 mm and 6 mm, or between about 4 mm and 5 mm. In some embodiments, the additional spoke connector 570 can be positioned below the spoke connector 530 by a distance between about 1 mm and 8 mm, between about 2 mm and 7 mm, between about 3 mm and 6 mm, or between about 4 mm and 5 mm. In some embodiments, the heater 555 can be spaced (e.g., below) the spoke connector 570 by a distance between about 1 mm and 15 mm, between about 2 mm and 13 mm, between about 3 mm and 11 mm, between about 4 mm and 9 mm, or between about 5 mm and 7 mm. Distances less than these ranges may result in excessive RF and / or DC current leakage, while greater distances may require larger / more powerful heaters, increasing cost and power usage.

[0049]

[0066] Each of the electrodes can be coupled to one or more power sources, as can be seen in FIG. 5B . FIG. 5B is a schematic, partial cross-sectional view of an electrode arrangement 500 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. As shown, the arrangement 500 can include a first bipolar electrode 505 and a second bipolar electrode 510. Each electrode can be coupled to one or more power sources as described above, and while FIG. 5B shows an exemplary coupling configuration, it should be understood that any number of electrode coupling configurations can be used. For example, the first bipolar electrode 505 can be coupled to a first DC power source 585 (e.g., via a spoke-like connector 530), and the second bipolar electrode 510 can be coupled to a second DC power source 590 (e.g., via a DC rod or lead extending to the second bipolar electrode 510). Either power source can operate in a positive or negative voltage configuration. Either power source can operate in a positive or negative voltage configuration. This may allow the two bipolar electrodes to operate with opposite polarities to chuck a wafer. For example, the first bipolar electrode 505 may be supplied with a negative current, while the second bipolar electrode 510 may be supplied with a positive current of equal magnitude, or vice versa. In some embodiments, the polarity of the current supplied to each bipolar electrode may be switched during processing and may be increased or decreased in either direction, for example, to provide electrostatic chucking. Each power supply may be floating (ungrounded), thereby eliminating relative voltage differences between the electrode and the chamber surroundings, such as the chamber sidewalls. In some embodiments, one or more RF power supplies may be incorporated. For example, RF power supply 595 may be coupled to the first bipolar electrode 505 (e.g., via spoke connector 530 or another spoke connector) and the second bipolar electrode 510 (e.g., via an RF rod extending to the second bipolar electrode 510). As described below, separate RF power supplies may be coupled to each of the bipolar electrodes, although in some embodiments, a single power supply may be used based on the configuration of the electrodes. An RF power supply 595 (or a separate RF power supply) may also be coupled to the RF electrode 560, for example via an additional spoke-like connector 570.In some embodiments, the first bipolar electrode 505 and the second bipolar electrode 510 can have substantially the same area (e.g., within 10%, within 5%, within 3%, within 1%, or less).

[0050]

[0067] FIG. 6A is a schematic top view of an electrode arrangement 600 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. Arrangement 600 may include any of the features or characteristics of arrangements 400 and / or 500 and may be incorporated into any substrate support for which bipolar chucking may be used, including any of the substrate supports described above. For example, arrangement 600 may include a first bipolar electrode 605 and a second bipolar electrode 610. The first bipolar electrode 605 and the second bipolar electrode 610 may each include a mesh material that may be substantially coplanar across both electrodes within the electrostatic chuck. As shown, each mesh material has a semicircular shape, although other shapes may be used. The central axes of the first bipolar electrode 605 and the second bipolar electrode 610 may be radially offset from each other, with the straight sides of each semicircle being parallel and adjacent to each other to form the circular shape. The meshes of the first bipolar electrode 605 and the second bipolar electrode 610 may be separated by a gap 615. The mesh of each of the first bipolar electrode 605 and the second bipolar electrode 610 can have an outermost edge substantially aligned with the outermost edge of the substrate seat defined by the substrate support surface. For example, the arcuate portion of each semicircular mesh can have a radius and curvature that substantially matches the radius and curvature of the outermost edge of the substrate seat. Electrode leads can be coupled to the mesh of each of the first bipolar electrode 605, e.g., at location 620, and the second bipolar electrode 610, e.g., at location 625, which in some embodiments can be anywhere along the mesh but are often proximate the center of the substrate seat.

[0051]

[0068] As shown, in some embodiments, the arrangement 600 may include an RF electrode 660 that may be located or positioned radially outward from the first bipolar electrode 605 and the second bipolar electrode 610 and may extend around the bipolar electrodes as shown. For example, the RF electrode 660 may have a generally annular mesh with an outermost edge that extends beyond the outer peripheral edges of the first bipolar electrode 605 and the second bipolar electrode 610. In some embodiments, the mesh of the RF electrode 660 may be positioned below the mesh of the bipolar electrodes. In other embodiments, the mesh of the RF electrode 660 may be substantially flush with the mesh of the bipolar electrodes. In such embodiments, the diameter of the inner opening of the mesh may be sized to minimize or eliminate a gap between the inner edge of the mesh of the RF electrode 660 and the arcuate portion of the bipolar electrode 505. For example, the gap between the RF electrode 660 and the bipolar electrodes may be less than 5 mm in some embodiments. In some embodiments, the RF electrode 660 may be included, for example, under the outer region 347 or around the edge region of the substrate support. An electrode lead may couple an RF power source to the RF electrode 660 at one or more locations 655, as shown, using, for example, spoke connectors 630 (which may be similar to spoke connectors 430, 530, 570, etc.). While four such lead locations are shown, any number of leads may be provided in embodiments to ensure uniform delivery to the electrode. The leads may be provided at regular intervals around the RF electrode 660 to provide a symmetrical arrangement that may promote uniform RF flow across the substrate support surface. The RF electrode 660 may be DC floating (e.g., not coupled to a DC power source). By DC floating the RF electrode 660, the RF electrode 660 helps confine the DC potential to the area under the wafer, which may help reduce or eliminate DC plasma generation, DC discharge, and / or discoloration of the substrate support.

[0052]

[0069] FIG. 6B shows a schematic partial cross-sectional view of an electrode arrangement 600 for an exemplary substrate support assembly in accordance with some embodiments of the present technique, which may include any of the features, characteristics, or components described above and may be included in any of the substrate supports described elsewhere. As described above, a first DC power supply 635 may be coupled to the first bipolar electrode 605, and a second DC power supply 640 may be coupled to the second bipolar electrode. The DC power supplies may be floated, as described above. Either power supply may be operated in a positive or negative voltage configuration. This may allow the two bipolar electrodes to be operated with opposite polarities to chuck a wafer. For example, the first bipolar electrode 605 may be supplied with a negative current, while the second bipolar electrode 610 may be supplied with a positive current of equal magnitude, or vice versa. In some embodiments, the polarity of the current supplied to each bipolar electrode may be switched during processing and may be increased or decreased in either direction, for example, to provide electrostatic chucking. Additionally, an RF power source 645 may be coupled to the first bipolar electrode 605 and the second bipolar electrode 610, although in some embodiments each bipolar electrode may have its own dedicated RF power source. The RF power source 645 (or a separate RF power source) may be coupled to the RF electrode 660. Additionally, the placement of the RF electrode 660 may maintain RF continuity across the wafer to ensure that RF current may be delivered more uniformly across the wafer, including the edge region of the wafer, to promote more uniform plasma deposition across the wafer.

[0053]

[0070] FIG. 7 is a schematic top view of an electrode arrangement 700 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. Arrangement 700 can include any of the features or characteristics of arrangements 400, 500, and / or 600 and can be incorporated into any substrate support for which bipolar chucking may be used, including any of the substrate supports described above. For example, arrangement 700 can include a first bipolar electrode 705, a second bipolar electrode 710, a third bipolar electrode 715, and a fourth bipolar electrode 720. Each bipolar electrode can include a mesh material that can be substantially coplanar across both or all of the bipolar electrodes within the electrostatic chuck. Each bipolar electrode can have a wedge-shaped configuration (e.g., less than 180 degrees of a circle). While four bipolar electrodes, each with a 90-degree wedge shape, are shown, other sizes and numbers of bipolar electrodes may be used in various embodiments. For example, FIG. 8 illustrates an arrangement 800 having six 60-degree wedge-shaped bipolar electrodes 805. In various embodiments, other numbers of bipolar electrodes may be used. For example, the arrangement 700 may include four or more bipolar electrodes, six or more bipolar electrodes, eight or more bipolar electrodes, ten or more bipolar electrodes, or more bipolar electrodes. Often, an even number of bipolar electrodes may be used, although in various embodiments, an odd number may be used. In the figures, each bipolar electrode has the same area, but in some embodiments, some or all of the bipolar electrodes may have different sizes.

[0054]

[0071] The electrode leads can be coupled to the mesh of each of the first bipolar electrodes 705, for example, at one or more locations 750, which can be near the center of the substrate seat, but in some embodiments can be anywhere along the mesh.

[0055]

[0072] As shown, in some embodiments, arrangement 700 can include an RF electrode 760, which can be located or positioned radially outward from bipolar electrodes 705, 710, 715, and 720 and can extend around the bipolar electrodes as shown. Similarly, arrangement 800 can include a similar RF electrode 860. RF electrode 760 can have a generally annular mesh with an outermost edge extending beyond the outer peripheral edges of bipolar electrodes 705, 710, 715, and 720. In some embodiments, the mesh of RF electrode 760 can be positioned below the mesh of the bipolar electrodes. In other embodiments, the mesh of RF electrode 760 can be substantially flush with the mesh of the bipolar electrodes. In such embodiments, the diameter of the inner opening of the mesh can be sized to minimize or eliminate a gap between the inner edge of the mesh of RF electrode 760 and the arcuate portion of bipolar electrode 505. For example, the gap between RF electrode 760 and the bipolar electrodes can be less than 5 mm in some embodiments. In some embodiments, the RF electrode 760 may be included, for example, under the outer region 347 or around the edge region of the substrate support. Electrode leads may couple an RF power source to the RF electrode 760 at one or more locations 755, as shown, for example, by using spoke-like connectors (which may be similar to spoke-like connectors 430, 530, 570, 630, etc.). While four such lead locations are shown, any number of leads may be provided in embodiments to ensure uniform delivery to the electrode. Leads may be provided at regular intervals around the RF electrode 760 to provide a symmetrical arrangement that may promote uniform RF flow across the substrate support surface. The RF electrode 760 may be DC-floated (e.g., not coupled to a DC power source). By DC-floating the RF electrode 760, the RF electrode 760 helps confine the DC potential to the area under the wafer, which may help reduce or eliminate DC plasma generation, DC discharge, and / or discoloration of the substrate support.

[0056]

[0073] A first DC power supply can be coupled to all odd-numbered bipolar electrodes, and a second DC power supply can be coupled to each even-numbered electrode. The DC power supplies may be floated as described above. Either power supply can operate in a positive or negative voltage configuration. This may allow adjacent bipolar electrodes to be operated with opposite polarities to chuck a wafer. For example, alternating odd-numbered bipolar electrodes (e.g., 705, 715) can be supplied with a negative current and even-numbered bipolar electrodes (e.g., 710, 720) can be supplied with a positive current of equal magnitude, or vice versa. This allows the polarity of the charge to alternate azimuthally around the substrate support for each bipolar electrode. In some embodiments, the polarity of the current supplied to each bipolar electrode can be switched during processing and increased or decreased in either direction, for example, to provide electrostatic chucking. Additionally, although RF power supplies can be coupled to the bipolar electrodes, each bipolar electrode can have its own dedicated RF power supply in some embodiments. The RF power source (or a separate RF power source) may be coupled to RF electrode 760. Additionally, the placement of RF electrode 660 may maintain RF continuity across the wafer to ensure that RF current can be delivered more uniformly across the wafer, including the edge region of the wafer, to promote more uniform plasma deposition across the wafer.

[0057]

[0074] FIG. 9 is a schematic top view of an electrode arrangement 900 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. Arrangement 900 may include any of the features or characteristics of arrangements 400, 500, 600, 700, and / or 800 and may be incorporated into any substrate support for which bipolar chucking may be used, including any of the aforementioned substrate supports. For example, arrangement 900 may include a first bipolar electrode 905 and a second bipolar electrode 910. The first bipolar electrode 905 and the second bipolar electrode 910 may each include a mesh material that may be substantially coplanar across both electrodes within the electrostatic chuck. As shown, each mesh material has a spiral shape, although other shapes may be used. The central axes of the first bipolar electrode 905 and the second bipolar electrode 910 may be coaxial or radially offset relative to one another. Each spiral-shaped bipolar electrode can define gaps between adjacent layers or radially outer portions of each spiral, with portions of other bipolar electrodes disposed within the gaps such that the two bipolar electrodes alternate with one another. Electrode leads can be coupled to each mesh of a first bipolar electrode 905, e.g., at location 920, and a second bipolar electrode 910, e.g., at location 925, which in some embodiments can be anywhere along the mesh.

[0058]

[0075] In some embodiments, the width of each bipolar electrode (e.g., along each segment of the spiral arc) may be the same, while in other embodiments, the widths may vary. In some embodiments, the width of each bipolar electrode may be between about 20 mm and 60 mm, between about 25 mm and 55 mm, between about 30 mm and 50 mm, or between about 35 mm and 45 mm. Such widths can help ensure that the current density flowing along the length of each bipolar electrode is not so high as to create hot spots that could lead to film uniformity issues. The width of each spiral may be constant or may vary along the length of the spiral.

[0059]

[0076] As shown, in some embodiments, the arrangement 900 may include an RF electrode 960 that may be located or positioned radially outward from the first bipolar electrode 905 and the second bipolar electrode 910 and may extend around the bipolar electrodes as shown. For example, the RF electrode 960 may have a generally annular mesh with an outermost edge that extends beyond the outer peripheral edges of the first bipolar electrode 905 and the second bipolar electrode 910. As shown, the inner diameter of the mesh of the RF electrode 960 may define two opposing regions of increasing diameter. These regions may accommodate the outer portions or layers of each spiral-shaped bipolar electrode, which continue to expand radially outward until the mesh of each bipolar electrode terminates. In some embodiments, the mesh of the RF electrode 960 may be located below the mesh of the bipolar electrodes. In other embodiments, the mesh of the RF electrode 960 may be substantially coplanar with the mesh of the bipolar electrodes. In such embodiments, the diameter of the inner opening of the mesh can be sized to minimize or eliminate a gap between the inner edge of the mesh of the RF electrode 960 and the arcuate portion of the bipolar electrode 505. In some embodiments, the RF electrode 960 can be included, for example, under the outer region 347 or around the edge region of the substrate support. An electrode lead can couple an RF power source to the RF electrode 960 at one or more locations 965, as shown, using, for example, spoke-like connectors (which can be similar to spoke-like connectors 430, 530, 570, 630, etc.). While two such lead locations are shown, embodiments can include any number of leads that ensure uniform delivery to the electrode. The RF electrode 960 can be DC floating (e.g., not coupled to a DC power source). By DC floating the RF electrode 960, the RF electrode 960 can help confine the DC potential to the area under the wafer, which can help reduce or eliminate DC plasma generation, DC discharge, and / or discoloration of the substrate support.

[0060]

[0077] As described above, a first DC power supply can be coupled to the first bipolar electrode 905, and a second DC power supply can be coupled to the second bipolar electrode. The DC power supplies may be floated as described above. Either power supply can operate in a positive or negative voltage configuration. This may allow the two bipolar electrodes to be operated with opposite polarities to chuck a wafer. For example, the first bipolar electrode 905 can be supplied with a negative current while the second bipolar electrode 910 can be supplied with a positive current of equal magnitude, or vice versa. In some embodiments, the polarity of the current supplied to each bipolar electrode can be switched during processing and can be increased or decreased in either direction, for example, to provide electrostatic chucking. Additionally, an RF power supply can be coupled to the first bipolar electrode 905 and the second bipolar electrode 910, although in some embodiments, each bipolar electrode can have its own dedicated RF power supply. The RF power supply (or a separate RF power supply) may be coupled to the RF electrode 960. Additionally, the placement of the RF electrode 960 may maintain RF continuity across the wafer to ensure that RF current can be delivered more uniformly across the wafer, including the edge region of the wafer, to promote more uniform plasma deposition across the wafer.

[0061]

[0078] 10A-10D are schematic top views of an electrode arrangement 1000 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. The electrodes in arrangement 1000 can be any of the electrodes previously described or any number of other pedestals or chucks, such as may be included in substrate support assembly 310. The bipolar electrodes may operate as electrostatic chucks, as described above and further below. As shown, each electrode arrangement 1000 may include a first bipolar electrode 1005 and a second bipolar electrode 1010. The bipolar electrodes may be embedded in a puck or chuck body, such as an aluminum nitride-containing ceramic, as described above, and may feature any of the features, configurations, or characteristics described above for any substrate support. In some embodiments, the bipolar electrodes 1005, 1010 may be embedded between a heater (not shown) and a substrate support surface, while in other embodiments, the bipolar electrodes 1005, 1010 may be positioned elsewhere relative to the heater, or the heater may be omitted entirely.

[0062]

[0079] The first bipolar electrode 1005 and the second bipolar electrode 1010 may each include a mesh material that may be substantially coplanar across both electrodes within the electrostatic chuck. The mesh material may be characterized by any number of shapes or geometries. As shown, the second bipolar electrode 1010 includes a central region 1015 having a plurality of wedge-shaped portions 1020 extending radially outward from the central region 1015. Each wedge-shaped portion 1020 may have a width that extends radially outward to form the wedge shape. The first bipolar electrode 1005 may have a generally annular shape and may extend around the second bipolar electrode 1010.

[0063]

[0080] The inner diameter of the first bipolar electrode 1005 can define a plurality of fingers 1025, which are sized and shaped to fit within gaps formed between adjacent ones of the wedge-shaped portions 1020. For example, each finger 1025 can have a width that tapers radially inward to substantially fill the respective gap. Any number of wedge-shaped portions 1020 and fingers 1025 can be provided in the arrangement 1000. For example, the arrangement 1000 may include two or more wedge portions 1020a / fingers 1025a (e.g., arrangement 1000a of FIG. 10A), three or more wedge portions 1020b / fingers 1025b (e.g., arrangement 1000b of FIG. 10B), four or more wedge portions 1020c / fingers 1025c (e.g., arrangement 1000 of FIG. 10C), five or more wedge portions / fingers, six or more wedge portions 1020d / fingers 1025d (e.g., arrangement 1000d of FIG. 10D), seven or more wedge portions / fingers, eight or more wedge portions / fingers, nine or more wedge portions / fingers, ten or more wedge portions / fingers, or more wedge portions / fingers. As shown, each wedge-shaped portion 1020 has the same area, although in some embodiments, some or all of the wedge-shaped portions 1020 may have different sizes. Similarly, the fingers 1025 may each have the same area, although in some embodiments, some or all of the fingers 1025 may have different sizes. In some embodiments, the first bipolar electrode 1005 and the second bipolar electrode 1010 may have substantially the same area, although in other embodiments, the two bipolar electrodes may have different areas.

[0064]

[0081] The entire second bipolar electrode 1010 can be radially inward of the first bipolar electrode 1005, and the two bipolar electrodes 1005, 1010 can be coaxial in some embodiments. The second bipolar electrode 1010 can have a diameter of between about 7 inches and 12 inches, between about 8 inches and 11 inches, or between about 9 inches and 10 inches, although other diameters are possible in some embodiments. The first bipolar electrode 1005 can have an outer diameter of between about 12 inches and 14 inches, between about 12.25 inches and 13.75 inches, between about 12.5 inches and 13.5 inches, or between 12.75 inches and 12.25 inches. For example, the mesh of the first bipolar electrode 1005 can have an outermost edge that extends radially outward beyond the outermost edge of the substrate seat defined by the substrate support surface (which coincides with the outermost edge of the substrate being processed and can be formed from a recessed area similar to recessed area 345). The first bipolar electrode 1005 and the second bipolar electrode 1010 can be spaced apart by less than about 5 mm, in some embodiments, for example, between about 1 mm and 5 mm, between about 2 mm and 4 mm, or about 3 mm.

[0065]

[0082] The electrode leads can couple one or more power sources to the mesh of each of the first bipolar electrode 1005 and the second bipolar electrode 1010. For example, in some embodiments, the second bipolar electrode 1010 can be coupled to one or more power sources at a location 1055, which can be proximate the center of the second bipolar electrode 1010, or at any other location along the mesh. For example, each wedge-shaped portion can include 1020, can include a location 1055, and / or can be located within the central region 1015. The first bipolar electrode 1005 can be coupled to one or more power sources at one or more locations 1060 around the circumference of the first bipolar electrode 1005 and / or at the proximal end of each of the fingers 1025. For example, as shown, the first bipolar electrode 1005 can be coupled to a power source at multiple locations 1055 positioned proximate the distal ends of the fingers 1025 (e.g., proximate the center of the support surface). In some embodiments, the number of locations for the first bipolar electrode 1005 can match the number of fingers 1025, and the number of locations for the second bipolar electrode 1010 can match the number of wedge-shaped portions 1020.

[0066]

[0083] Each of the electrodes may be coupled to one or more power sources. For example, the first bipolar electrode 1005 may be coupled to a first DC power source (similar to 485), and the second DC power source 1010 may be coupled to a second DC power source (similar to 490). Either electrode may be operated in a positive or negative voltage configuration, which may be switched during processing and may be increased or decreased in either direction to provide, for example, electrostatic chucking. Each power source may be floated (ungrounded). Either power source may be operated in a positive or negative voltage configuration. This may allow the two bipolar electrodes to be operated with opposite polarities to chuck a wafer. For example, the first bipolar electrode 1005 may be supplied with a negative current, while the second bipolar electrode 1010 may be supplied with a positive current of equal magnitude, or vice versa. In some embodiments, the polarity of the current supplied to each bipolar electrode may be switched during processing and may be increased or decreased in either direction to provide, for example, electrostatic chucking. In some embodiments, one or more RF power sources may be incorporated. For example, an RF power source 495 (e.g., RF power source 495) may be coupled to the first bipolar electrode 1005 (e.g., via one or more RF rods) and the second bipolar electrode 1010 (e.g., one or more RF rods extending to the second bipolar electrode 1010). While separate RF power sources may be coupled to each of the bipolar electrodes, in some embodiments, a single power source may be used based on the configuration of the electrodes.

[0067]

[0084] FIG. 11 is a schematic top view of an electrode arrangement 1100 for an exemplary substrate support assembly in accordance with some embodiments of the present technique. The arrangement 1100 may be included in the substrate support assembly 310 or any number of other pedestals or chucks. The bipolar electrodes may operate as an electrostatic chuck, as described above and further below. As shown, each bipolar electrode arrangement 1100 may include a first bipolar electrode 1105 and a second bipolar electrode 1110. The bipolar electrodes may be embedded in a puck or chuck body, such as an aluminum nitride-containing ceramic, as described above, and may feature any of the features, configurations, or characteristics described above for any substrate support. In some embodiments, the electrodes 1105, 1110 may be embedded between a heater (not shown) and a substrate support surface, while in other embodiments, the electrodes 1105, 1110 may be positioned elsewhere relative to the heater, or the heater may be omitted entirely.

[0068]

[0085] The first bipolar electrode 1105 and the second bipolar electrode 1110 may each include a mesh material that may be substantially coplanar across both electrodes within the electrostatic chuck. The mesh material may be characterized by any number of shapes or geometries. As shown, the first bipolar electrode 1105 includes an outer portion 1120 and an inner portion 1125 that are connected via a neck 1130. In some embodiments, the outer portion 1120 may be generally annular in shape, and the inner portion 1125 may be generally C-shaped (e.g., an arc with an open end). In some embodiments, the first bipolar electrode 1105 may include an innermost portion 1135 that is connected to the inner portion 1125 via an additional neck 1160. The innermost portion 1135, if present, may be generally C-shaped as shown, but may have a different shape in various embodiments. The second bipolar electrode 1110 can include an outer portion 1145 and an inner portion 1150 connected via a neck 1155. Each of the outer portion 1145 and the inner portion 1150 can be generally C-shaped and can face in an opposite direction from the C-shape of the inner portion 1125 and / or the innermost portion 1135. This allows the outer portion 1145 and the inner portion 1150 of the second bipolar electrode 1110 to be arranged to alternate with the outer portion 1120, the inner portion 1125, and / or the innermost portion 1135 of the first bipolar electrode 1105, with each neck 1130, 1160, 1155 disposed between either side of the respective C-shaped portion of the other bipolar electrode. Each C-shaped portion can at least partially fill the center of a portion of the other bipolar electrode. In other words, each of the first bipolar electrode 1105 and the second bipolar electrode 1110 can define one or more gaps between different portions of the respective bipolar electrode, and a portion of the other bipolar electrode can extend into and / or substantially fill each gap such that the two bipolar electrodes cover substantially all of the area of ​​the substrate support seat. In some embodiments, the first bipolar electrode 1105 and the second bipolar electrode 1110 can have substantially the same area, while in other embodiments, the two bipolar electrodes can have different areas.In some embodiments, the width of each neck of the first bipolar electrode 1105 and the second bipolar electrode 1110 can be at least 1.5 times, at least 1.75 times, at least 2 times, at least 2.25 times, at least 2.5 times, or more than the width of the smaller of the inner portion 1125 and the outer portion 1120. For example, in some embodiments, each neck can have a width between about 35 mm and 100 mm, between about 40 mm and 95 mm, between about 45 mm and 90 mm, between about 50 mm and 85 mm, between about 55 mm and 80 mm, between about 60 mm and 75 mm, or between about 65 mm and 70 mm. Such widths can help ensure that there is enough electrode material to handle the current flowing through the neck without creating resistive heating hot spots that can affect film uniformity on the wafer.

[0069]

[0086] The entire second bipolar electrode 1110 can be radially inward of the first bipolar electrode 1105. In other words, at least a portion of the first bipolar electrode 1105 can completely surround the second bipolar electrode 1110. The two bipolar electrodes 1105, 1110 can be coaxial or have offset central axes relative to one another in some embodiments. The second bipolar electrode 1110 can have an outer diameter of between about 7 inches and 12 inches, between about 8 inches and 11 inches, or between about 9 inches and 10 inches, although other diameters are possible in some embodiments. The first bipolar electrode 1105 can have an outer diameter of between about 12 inches and 14 inches, between about 12.25 inches and 13.75 inches, between about 12.5 inches and 13.5 inches, or between 12.75 inches and 12.25 inches. For example, the mesh of the first bipolar electrode 1105 can have an outermost edge that extends radially outward beyond the outermost edge of the substrate seat defined by the substrate support surface (which coincides with the outermost edge of the substrate being processed and can be formed from a recessed area similar to recessed area 345). The first bipolar electrode 1105 and the second bipolar electrode 1110 can be spaced apart by between about 1 mm and 5 mm, between about 2 mm and 4 mm, or about 3 mm in some embodiments.

[0070]

[0087] The electrode leads can couple one or more power sources to the mesh of each of the first bipolar electrode 1105 and the second bipolar electrode 1110. For example, in some embodiments, the second bipolar electrode 1110 can be coupled to one or more power sources at one or more locations 1140, which can be proximate the center of the second bipolar electrode 1110, or at any other location along the mesh. The first bipolar electrode 1105 can be coupled to one or more power sources near the center of the substrate seat and / or at one or more locations 1165 around the periphery of the first bipolar electrode 1105. For example, as shown, the first bipolar electrode 1105 can be coupled to power sources at multiple locations 1165 spaced at uniform angles around the first bipolar electrode 1105, such as by using spoke-like connectors (which can be similar to spoke-like connectors 430, 530, 570, 630, 730, etc.). In other embodiments, one or more locations 1165 may be positioned at irregular intervals around the first bipolar electrode 1105. The first bipolar electrode 1105 may include any number of locations 1165. For example, the first bipolar electrode 1105 may include one or more locations, two or more locations, three or more locations, four or more locations, five or more locations, six or more locations, seven or more locations, eight or more locations, nine or more locations, ten or more locations, eleven or more locations, twelve or more locations, or more locations.

[0071]

[0088] Each of the electrodes may be coupled to one or more power sources. For example, the first bipolar electrode 1105 may be coupled to a first DC power source (similar to 485), and the second DC power source 1110 may be coupled to a second DC power source (similar to 490). Either electrode may be operated in a positive or negative voltage configuration, which may be switched during processing and may be increased or decreased in either direction to provide, for example, electrostatic chucking. Each power source may be floated (ungrounded). Either power source may be operated in a positive or negative voltage configuration. This may allow the two bipolar electrodes to be operated with opposite polarities to chuck a wafer. For example, the first bipolar electrode 1105 may be supplied with a negative current, while the second bipolar electrode 1110 may be supplied with a positive current of equal magnitude, or vice versa. In some embodiments, the polarity of the current supplied to each bipolar electrode may be switched during processing and may be increased or decreased in either direction to provide, for example, electrostatic chucking. In some embodiments, one or more RF power sources may be incorporated. For example, an RF power source 495 (e.g., RF power source 495) may be coupled to the first bipolar electrode 1105 (e.g., via one or more RF rods) and the second bipolar electrode 1110 (e.g., one or more RF rods extending to the second bipolar electrode 1110). While separate RF power sources may be coupled to each of the bipolar electrodes, in some embodiments, a single power source may be used based on the configuration of the electrodes.

[0072]

[0089] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that some embodiments may be practiced without some of these details or with additional details.

[0073]

[0090] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Additionally, several well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be construed as limiting the scope of the technology.

[0074]

[0091] Where a range of values ​​is provided, each intervening value between the upper and lower limit of that range is also specifically disclosed, to the smallest unit of the unit of the lower limit, unless the context clearly dictates otherwise. All narrower ranges between any stated or unstated intervening value in a stated range, as well as any other stated or intervening value within that stated range, are encompassed. The upper and lower limits of such narrower ranges may individually be included or excluded from the range, and each range where one or both limits are included in the narrower range, or where neither limit is included in the narrower range, is also encompassed within the technology, excluding any specifically excluded limit in the stated range. When a stated range includes one or both limits, ranges excluding either or both of those included limits are also included.

[0075]

[0092] As used in this specification and claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to "a heater" includes a plurality of such heaters, a reference to "the mesh" includes a reference to one or more meshes and equivalents known to those skilled in the art, and so forth.

[0076]

[0093] Furthermore, the words "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in the specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A substrate support assembly comprising: an electrostatic chuck body defining a substrate support surface defining a substrate seat; a support stem coupled to the electrostatic chuck body; a first bipolar electrode embedded within the electrostatic chuck body; a second bipolar electrode embedded within the electrostatic chuck body; Equipped with the second bipolar electrode is entirely radially inward of at least a portion of the first bipolar electrode; the first bipolar electrode and the second bipolar electrode are coaxial with each other; each of the first bipolar electrode and the second bipolar electrode is coupled to at least one RF power source; each of the first bipolar electrode and the second bipolar electrode is coupled to at least one DC power source; Substrate support assembly.

2. The substrate support assembly of claim 1 , further comprising a DC floating and RF powered annular electrode disposed around the first bipolar electrode.

3. 3. The substrate support assembly of claim 2, further comprising a spoke connector disposed within the electrostatic chuck body, the spoke connector coupling the annular electrode to an RF power source.

4. The substrate support assembly of claim 3 , wherein the individual spokes of the spoke-like connector have a width of at least 5 mm.

5. The substrate support assembly of claim 1 , wherein the first bipolar electrode and the second bipolar electrode have substantially the same area.

6. the first bipolar electrode has a generally annular shape; the second bipolar electrode having a generally circular shape; The substrate support assembly of claim 1 .

7. further comprising an annular electrode disposed around the first bipolar electrode; the annular electrode is DC floating and RF powered; the annular electrode is coaxial with the first bipolar electrode; The substrate support assembly of claim 6 .

8. the second bipolar electrode includes a first portion and a second portion coupled to one another and separated by a gap; a portion of the first bipolar electrode extending into a gap formed between the first portion and the second portion; The substrate support assembly of claim 1 .

9. 1. A substrate support assembly comprising: an electrostatic chuck body defining a substrate support surface defining a substrate seat; a support stem coupled to the electrostatic chuck body; a first bipolar electrode embedded within the electrostatic chuck body; a second bipolar electrode embedded within the electrostatic chuck body; Equipped with the central axes of the first bipolar electrode and the second bipolar electrode are radially offset from one another; each of the first bipolar electrode and the second bipolar electrode is coupled to at least one RF power source; each of the first bipolar electrode and the second bipolar electrode is coupled to at least one DC power source; The substrate support assembly further comprises: an RF powered electrode having an outermost edge extending beyond peripheral edges of the first bipolar electrode and the second bipolar electrode; a spoke connector disposed within the electrostatic chuck body, the spoke connector connecting the RF powered electrode to an RF power source; A substrate support assembly comprising:

10. The substrate support assembly of claim 9 , wherein each of the first and second bipolar electrodes is generally semi-circular in shape.

11. The substrate support assembly of claim 9 , wherein the first bipolar electrode and the second bipolar electrode each comprise a wedge shape that is less than 180 degrees of a circle.

12. a third bipolar electrode having a wedge shape; a fourth bipolar electrode having a wedge shape; 12. The substrate support assembly of claim 11, further comprising: a polarity of the bipolar electrodes alternating between adjacent bipolar electrodes.

13. The substrate support assembly of claim 12 , wherein the number of bipolar electrodes having a wedge shape is an even number.

14. 1. A substrate support assembly comprising: an electrostatic chuck body defining a substrate support surface defining a substrate seat; a support stem coupled to the electrostatic chuck body; a first bipolar electrode embedded within the electrostatic chuck body; a second bipolar electrode embedded within the electrostatic chuck body; Equipped with the second bipolar electrode includes a first portion and a second portion coupled to one another and separated by a gap; a portion of the first bipolar electrode extending into the gap formed between the first and second portions; each of the first bipolar electrode and the second bipolar electrode is coupled to at least one RF power source; each of the first bipolar electrode and the second bipolar electrode is coupled to at least one DC power source; Substrate support assembly.

15. The substrate support assembly of claim 14 , wherein the second bipolar electrode is entirely radially inward of at least a portion of the first bipolar electrode.

16. 15. The substrate support assembly of claim 14, further comprising a DC floating and RF powered annular electrode disposed around the first and second bipolar electrodes.

17. the first bipolar electrode includes a first outer portion and a first inner portion connected via a first neck; the second bipolar electrode includes a second outer portion and a second inner portion connected via a second neck; the second outer portions are arranged alternately between the first outer portions and the first inner portions; The substrate support assembly of claim 14 .

18. 20. The substrate support assembly of claim 17, wherein the thickness of each of the first neck portion and the second neck portion is at least 1.5 times the width of the smaller of the first inner portion and the first outer portion.

19. The substrate support assembly of claim 14 , wherein each of the first bipolar electrode and the second bipolar electrode comprises a spiral shape.

20. 20. The substrate support assembly of claim 19, wherein each segment of the spiral has a width of at least 20 mm.

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