Switching circuit

Abstract

This invention provides a switching circuit that prevents damage to integrated circuits caused by electrostatic discharge. [Solution] The switching circuit includes multiple switching transistors M3_1 to M3_n, a gate drive circuit 30, multiple body impedance elements R33_1 to R33_n, and multiple gate-body impedance elements R32_1 to R32_n. The switching transistors are connected in series. The gate drive circuit is connected to the control terminals of the switching transistors. The first terminal of each body impedance element is connected to the body terminal of the corresponding switching transistor. The second terminal of each body impedance element is connected to the reference voltage terminal. The first terminal of each gate-body impedance element is connected to the control terminal of the corresponding switching transistor. The second terminal of each gate-body impedance element is connected to the body terminal of the corresponding switching transistor. When electrostatic discharge occurs, the switching transistors form a low impedance path.

Description

Technical Field

[0001] The present disclosure relates to electronic circuits, and more particularly to switching circuits.

Background Art

[0002] One of the many factors that can damage integrated circuits due to electrical overstress (EOS) is electrostatic discharge (ESD). ESD can permanently damage semiconductor devices within an integrated circuit and can affect the functionality of the integrated circuit (in some cases, preventing normal operation). How to avoid ESD damage to integrated circuits is one of the many technical problems in this field.

Summary of the Invention

Problems to be Solved by the Invention

[0003] Solve the problem of electrostatic discharge that damages integrated circuits.

Means for Solving the Problems

[0004] The present disclosure provides a switching circuit that prevents damage to an integrated circuit due to electrostatic discharge (ESD).

[0005] In one embodiment of the present disclosure, the switching circuit includes a first signal transmission port, a second signal transmission port, a plurality of switching transistors, at least one gate drive circuit, a plurality of body impedance elements, and a plurality of gate-body impedance elements. The switching transistors are connected in series between the first signal transmission port and the second signal transmission port. The output terminal of at least one gate drive circuit is connected to the control terminal of at least one switching transistor, providing a first gate voltage. The first terminal of at least one gate drive circuit is connected to the operating voltage terminal. The second terminal of at least one gate drive circuit is connected to the reference voltage terminal. The first terminal of each body impedance element is connected to the bulk terminal of the corresponding switching transistor among the switching transistors. The second terminal of each body impedance element is connected to the reference voltage terminal. The first terminal of each gate-body impedance element is connected to the control terminal of the corresponding switching transistor among the switching transistors. The second terminal of each gate-body impedance element is connected to the bulk terminal of the corresponding switching transistor among the switching transistors. [Effects of the Invention]

[0006] Based on the above, when an ESD event occurs, the gate-body impedance element transmits the ESD voltage coupled to the bulk terminal of the switching transistor to the control terminal of the switching transistor, thereby effectively turning on the switching transistor. Therefore, when an ESD event occurs, the switching transistor transmits the ESD current between the first signal transmission port and the second signal transmission port, preventing damage to the integrated circuit due to ESD.

[0007] To make the features and advantages of this invention easier to understand, the following will be described in detail with reference to the attached drawings and examples. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic diagram of a circuit block of a radio frequency integrated circuit according to one embodiment. [Figure 2] This is a schematic circuit diagram of a switching circuit according to one embodiment. [Figure 3] This is a schematic circuit diagram of a switching circuit according to one embodiment of the present disclosure. [Figure 4] This is a schematic circuit diagram of a switching circuit according to another embodiment of the present disclosure. [Figure 5] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 6] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 7] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 8] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 9] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 10] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 11] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 12] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 13] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 14] This is a schematic circuit diagram of a gate-body impedance element according to a different embodiment of the present disclosure. [Figure 15] This is a schematic circuit diagram of a gate drive circuit according to an embodiment of the present disclosure. [Figure 16] These are schematic circuit diagrams of gate drive circuits and body drive circuits according to different embodiments of the present disclosure. [Figure 17] These are schematic circuit diagrams of gate drive circuits and body drive circuits according to different embodiments of the present disclosure. [Modes for carrying out the invention]

[0009] As used throughout this specification (including the claims for utility model registration), the term “combined (or connected)” may refer to direct or indirect means of connection. For example, where the specification states that the first device is connected to (or coupled to) the second device, it should be interpreted that the first device may be directly connected to the second device, or indirectly connected to the second device via other devices or some means of connection. Terms such as “first,” “second,” etc., used throughout the specification of this disclosure (including the claims for utility model registration), are used solely for naming elements or distinguishing different embodiments or scopes, and are not intended to limit the number of elements or their order. Also, wherever possible, elements / components / steps that use the same reference numerals in the drawings and embodiments represent identical or similar parts. Elements / components / steps that use the same reference numerals or terms in different embodiments may refer to each other's relative descriptions. It should be understood that the features of the following embodiments can be combined with each other. For example, features of the second embodiment can be implemented in combination with features of the first embodiment. Those skilled in the art can select the appropriate combination of features according to their actual design needs.

[0010] Based on actual designs, the switching circuits described herein can be used in any integrated circuit (IC). In the event of an electrostatic discharge (ESD) event, the switching circuits can prevent damage to the integrated circuit from ESD current. For example, the switching circuits described herein can be applied to the radio frequency (RF) integrated circuit 100 shown in Figure 1 and other integrated circuits.

[0011] Figure 1 is a schematic diagram of the circuit block of a radio frequency integrated circuit 100 according to one embodiment. The radio frequency integrated circuit 100 shown in Figure 1 includes a series radio frequency switch path 110, a series radio frequency switch path 120, a radio frequency switch shunt path 130, and a radio frequency switch shunt path 140. For simplification, Figure 1 does not show circuits / elements other than the series radio frequency switch path 110, the series radio frequency switch path 120, the radio frequency switch shunt path 130, and the radio frequency switch shunt path 140, and other circuits / elements may be arbitrarily arranged based on the actual design.

[0012] The first terminals of the radio frequency switch series paths 110 and 120 are connected to radio frequency connection pad RFC. Radio frequency connection pad RF2 is connected to the second terminal of the radio frequency switch series path 110 and the first terminal of the radio frequency switch shunt path 130. Radio frequency connection pad RF1 is connected to the second terminal of the radio frequency switch series path 120 and the first terminal of the radio frequency switch shunt path 140. Radio frequency connection pads RFC, RF1, and / or RF2 may be bonding pads or other types of connection pads. The second terminals of the radio frequency switch shunt paths 130 and 140 are connected to reference voltage terminal REF1. Based on the actual design, reference voltage terminal REF1 may be a ground voltage terminal or other fixed voltage terminal.

[0013] In normal operation, the radio frequency switch series paths 110 and 120 function as signal transmission paths (e.g., paths for transmitting or receiving signals). The radio frequency switch shunt paths 130 and 140 function as shunt networks for enhancing the isolation between different signal paths. The switching circuit described in this specification can be applied to one or more of the radio frequency switch series path 110, the radio frequency switch series path 120, the radio frequency switch shunt path 130, and the radio frequency switch shunt path 140. When an ESD event occurs at the radio frequency connection pads RFC, RF1, and / or RF2, the ESD current can be conducted to the reference voltage terminal REF1 through the radio frequency switch series path 110, the radio frequency switch series path 120, the radio frequency switch shunt path 130, and / or the radio frequency switch shunt path 14. Therefore, the radio frequency switch series path 110, the radio frequency switch series path 120, the radio frequency switch shunt path 130, and / or the radio frequency switch shunt path 140 can prevent damage to the radio frequency integrated circuit 100 caused by ESD.

[0014] Hereinafter, a plurality of implementation examples of the switching circuit will be described.

[0015] FIG. 2 is a schematic circuit diagram of a switching circuit 200 according to an embodiment. The switching circuit 200 shown in FIG. 2 includes a signal transmission port SP21, a signal transmission port SP22, a plurality of switching transistors (e.g., the switching transistors M2_1, M2_2,..., M2_n-1, and M2_n shown in FIG. 2), and a plurality of gate resistors (e.g., the gate impedance elements R2_1, R2_2,..., R2_n-1, and R2_n shown in FIG. 2). Based on the actual design, in some application examples, each of the gate impedance elements R2_1 to R2_n is a resistor. In some embodiments, the resistance values of the gate impedance elements R2_1 to R2_n are the same. In other embodiments, the dimensions of the gate impedance elements R2_1 to R2_n may be different from each other.

[0016] The switching circuit 200 shown in FIG. 2 can be applied to the radio frequency switch series path 110, the radio frequency switch series path 120, the radio frequency switch shunt path 130, or the radio frequency switch shunt path 140 shown in FIG. 1. When the switching circuit 200 is applied to the radio frequency integrated circuit 100 shown in FIG. 1, the switching circuit 200 can function as a radio frequency switching circuit.

[0017] For example, when the switching circuit 200 shown in FIG. 2 is applied to the radio frequency switch series path 110 shown in FIG. 1, the signal transmission ports SP21 and SP22 of the switching circuit 200 function as the first terminal and the second terminal of the radio frequency switch series path 110, respectively. That is, the signal transmission port SP21 is connected to the radio frequency connection pad REC (corresponding to the connection pad PAD2 in FIG. 2). The signal transmission port SP22 is connected to the first terminal of the radio frequency switch shunt path 130. Further, the signal transmission port SP22 is connected to the reference voltage terminal REF1 (corresponding to the reference voltage terminal REF2 in FIG. 2) via the radio frequency switch shunt path 130. Alternatively, in other embodiments, the signal transmission port SP21 is connected to the radio frequency connection pad REC (corresponding to the connection pad PAD2 in FIG. 2). The signal transmission port SP22 may be connected to the radio frequency connection pad REF2, whereby the switching circuit 200 can function as a segment of the radio frequency integrated circuit 100.

[0018] As another example, when the switching circuit 200 shown in Figure 2 is applied to the radio frequency switch shunt path 130 shown in Figure 1, the signal transmission ports SP21 and SP22 of the switching circuit 200 function as the first and second terminals of the radio frequency switch shunt path 130, respectively. That is, signal transmission port SP21 is connected to the radio frequency connection pad RFC (corresponding to connection pad PAD2 in Figure 2) via the radio frequency switch series path 110, or signal transmission port SP21 is connected to the radio frequency connection pad RFC2 (corresponding to connection pad PAD2 in Figure 2). Signal transmission port SP22 is connected to the reference voltage terminal REF1 (corresponding to reference voltage terminal REF2 in Figure 2).

[0019] The number n of switching transistors M2_1 to M2_n can be determined according to the actual design and application. For example, the number n of switching transistors M2_1 to M2_n may be an integer of 4 or more. Furthermore, although the switching transistors M2_1 to M2_n shown in Figure 2 are N-channel metal-oxide-semiconductor (NMOS) transistors, this embodiment does not limit the types of switching transistors M2_1 to M2_n. In another embodiment, the switching transistors M2_1 to M2_n may be changed to P-channel metal-oxide-semiconductor (PMOS) transistors or other types of transistors. Based on the actual design, in some embodiments the dimensions of the switching transistors M2_1 to M2_n are the same. In other embodiments the dimensions of the switching transistors M2_1 to M2_n may be different from each other.

[0020] In the embodiment shown in Figure 2, switching transistors M2_1 to M2_n are connected in series between signal transmission ports SP21 and SP22. The first terminal (e.g., drain) of switching transistor M2_1 is connected to signal transmission port SP21. The second terminal (e.g., source) of switching transistor M2_1 is connected to the first terminal (e.g., drain) of switching transistor M2_2. Similarly, the second terminal of switching transistor M2_n is connected to signal transmission port SP22. The first terminal of each gate impedance element R2_1 to R2_n is connected to the gate drive circuit 20 (a functional circuit within the integrated circuit) in the integrated circuit. The second terminal of each gate impedance element R2_1 to R2_n is connected to the control terminal (e.g., gate) of the corresponding switching transistor among the switching transistors M2_1 to M2_n, as shown in Figure 2. Depending on the design, in some embodiments the gate drive circuit 20 may be implemented as a hardware circuit. In other embodiments, the gate drive circuit 20 may be implemented as a combination of hardware, firmware, and software (i.e., a program).

[0021] In terms of hardware form, the aforementioned gate drive circuit 20 may be implemented as a logic circuit on an integrated circuit. For example, the functions associated with the gate drive circuit 20 may be implemented as various logic blocks, modules, and circuits within one or more hardware controllers, microcontrollers, hardware processors, microprocessors, application-specific integrated circuits (ASICs), digital signal processors (DSPs), field-programmable gate arrays (FPGAs), central processing units (CPUs), and / or other processing units. The functions associated with the gate drive circuit 20 may be implemented as hardware circuits such as various logic blocks, modules, and circuits within an integrated circuit using a hardware description language (e.g., Verilog HDL or VHDL) or other appropriate programming language.

[0022] With regard to software and / or firmware forms, the associated functions of the gate drive circuit 20 described above may be implemented as programming code. For example, the gate drive circuit 20 may be implemented using a common programming language (such as C, C++, or assembly language) or another suitable programming language. The programming code may be recorded / stored in a non-temporary machine-readable storage medium. In some embodiments, the non-temporary machine-readable storage medium includes, for example, semiconductor memory and / or storage devices. An electronic device (e.g., a CPU, hardware controller, microcontroller, hardware processor, or microprocessor) can realize the associated functions of the gate drive circuit 20 by reading and executing the programming code from the non-temporary machine-readable storage medium.

[0023] In normal operation, the gate drive circuit 20 (a functional circuit within the integrated circuit) controls switching transistors M2_1 to M2_n, enabling it to turn the path between signal transmission port SP21 and signal transmission port SP22 on or off. Signal transmission port SP21 can transmit radio frequency signals or other signals. If an ESD event occurs at connection pad PAD2, the ESD voltage of connection pad PAD2 is coupled to the gates of switching transistors M2_1 to M2_n via the parasitic capacitance between the gate and drain of switching transistor M2_1, turning on switching transistor M2_n (because the gate-source voltage Vgs of switching transistor M2_n is greater than the threshold voltage). Once switching transistor M2_n is turned on, the ESD voltage further turns on switching transistor M2_n-1 (because the gate-source voltage Vgs of switching transistor M2_n-1 is greater than the threshold voltage). Similarly, in ideal conditions, the gate-coupled ESD voltage turns on all switching transistors M2_1 to M2_n. Therefore, the switched transistors M2_1 to M2_n, when turned on, transmit ESD current between the signal transmission ports SP21 and SP22, preventing damage to the integrated circuit due to ESD current.

[0024] However, in real-world situations, each switching transistor M2_1 to M2_n has an on-resistance, and the sum of these on-resistances can cause the gate-source voltage Vgs of switching transistors M2_1 to M2_n to be non-uniform (i.e., the gate-source voltage Vgs may differ for each switching transistor). Non-uniform gate-source voltage Vgs means that the drain-source voltage Vds of switching transistors M2_1 to M2_n are also non-uniform. Due to the non-uniformity of the gate-source voltage Vgs and drain-source voltage Vds, the gate-source voltage Vgs of some switching transistors (e.g., switching transistor M2_1) may fall below the threshold voltage. In other words, if an ESD event occurs at connection pad PAD2, some switching transistors (e.g., switching transistor M2_1) may not turn on, resulting in a reduction or loss of ESD protection provided by the switching circuit 200.

[0025] Figure 3 is a schematic circuit diagram of a switching circuit 300 according to one embodiment of the present disclosure. In some applications, the switching circuit 300 is located on a silicon-on-insulator (SOI) chip. The switching circuit 300 shown in Figure 3 includes a signal transmission port SP31, a signal transmission port SP32, a plurality of gate impedance elements (e.g., gate impedance elements R31_1, R31_2, ..., R31_n-1, and R31_n shown in Figure 3), a plurality of switching transistors (e.g., switching transistors M3_1, M3_2, ..., M3_n-1, and M3_n shown in Figure 3), a plurality of gate-body impedance elements (e.g., gate-body impedance elements R32_1, R32_2, ..., R32_n-1, and R32_n shown in Figure 3), and a plurality of body impedance elements (e.g., body impedance elements R33_1, R33_2, ..., R33_n-1, and R33_n shown in Figure 3). The switching transistors M3_1 to M3_n are connected in series between the signal transmission ports SP31 and SP32. The signal transmission port SP32 is connected to the reference voltage terminal REF3. The specific voltage of the reference voltage terminal REF3 can be determined according to the actual design and application. For example, the reference voltage terminal REF3 may be the ground voltage or another reference voltage.

[0026] Based on actual designs, in some applications, each gate impedance element R31_1 to R31_n is a resistor. The first terminal of each gate impedance element R31_1 to R31_n is connected to the control terminal (e.g., gate) of the corresponding switching transistor among the switching transistors M3_1 to M3_n. The output terminal of the gate drive circuit 30 is connected to the second terminal of each gate impedance element R31_1 to R31_n. In some applications, the gate drive circuit 30 includes a buffer circuit, inverter, logic control circuit, or other drive circuit (not shown). In some applications, the input terminal of the gate drive circuit 30 may be connected to a level conversion circuit, bias circuit, voltage regulation circuit, or other circuit (not shown).

[0027] The output terminal of the gate drive circuit 30 is connected to the control terminals of the switching transistors M3_1 to M3_n via gate impedance elements R31_1 to R31_n, providing the gate voltage Vg3. The first terminal of the gate drive circuit 30 is connected to the operating voltage terminal VCC3. The second terminal of the gate drive circuit 30 is connected to the reference voltage terminal REF3. The gate drive circuit 30, switching circuit 300, signal transmission port SP31, signal transmission port SP32, gate impedance elements R31_1 to R31_n, and switching transistors M3_1 to M3_n shown in Figure 3 can be described by referring to the related descriptions of the gate drive circuit 20, switching circuit 200, signal transmission port SP21, signal transmission port SP22, gate impedance elements R2_1 to R2_n, and switching transistors M2_1 to M2_n shown in Figure 2, so the same details will not be repeated. Furthermore, in the embodiment of Figure 3, one gate drive circuit 30 is used that is connected to the control terminals of the switching transistors M3_1 to M3_n. However, in some applications, multiple gate drive circuits 30 may be connected to switching transistors M3_1 to M3_n, respectively, and may individually provide the same or different gate voltages (not shown).

[0028] The switching circuit 300 shown in Figure 3 can be applied to the radio frequency switch series path 110, the radio frequency switch series path 120, the radio frequency switch shunt path 130, or the radio frequency switch shunt path 140 shown in Figure 1. When the switching circuit 300 is applied to the radio frequency integrated circuit 100 shown in Figure 1, the switching circuit 300 can function as a radio frequency switching circuit. When the switching circuit 300 shown in Figure 3 functions as the radio frequency switch shunt path 130 shown in Figure 1, the signal transmission port SP31 of the switching circuit 300 is connected to the radio frequency connection pad RF2 (corresponding to the connection pad PAD3 in Figure 3) or to the radio frequency connection pad RCF (corresponding to the connection pad PAD3 in Figure 3) via the radio frequency switch series path 110. The signal transmission port SP32 is connected to the reference voltage terminal REF1 (corresponding to the reference voltage terminal REF3 in Figure 3). When the switching circuit 300 shown in Figure 3 functions as the radio frequency switch series path 110 shown in Figure 1, the signal transmission port SP31 of the switching circuit 300 is connected to the radio frequency connection pad RFC (corresponding to the connection pad PAD3 in Figure 3), and the signal transmission port SP32 is connected to the reference voltage terminal REF1 (corresponding to the reference voltage terminal REF3 in Figure 3) via the radio frequency switch shunt path 130.

[0029] The first terminal of each body impedance element R33_1 to R33_n is connected to the bulk (or body) terminal of the corresponding switching transistor among the switching transistors M3_1 to M3_n. In some applications based on actual designs, the second terminal of each body impedance element R33_1 to R33_n is directly connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). In other applications, the second terminal of each body impedance element R33_1 to R33_n is connected to a body drive circuit (not shown in Figure 3, but described later). In some applications based on actual designs, each body impedance element R33_1 to R33_n is a resistor. The first terminal of each gate body impedance element R32_1 to R32_n is connected to the control terminal of the corresponding switching transistor among the switching transistors M3_1 to M3_n. The second terminal of each gate-body impedance element R32_1 to R32_n is connected to the bulk terminal of the corresponding switching transistor among the switching transistors M3_1 to M3_n.

[0030] Based on actual designs, in some applications, each gate-body impedance element R32_1 to R32_n is a resistor (referred to here as a gate-body resistor). The first and second terminals of the gate-body resistors are connected to the control terminal and bulk terminal of the corresponding switching transistor M3_1 to M3_n, respectively. In other applications, each gate-body impedance element R32_1 to R32_n is a different impedance circuit (details will be described later).

[0031] The number n of switching transistors M3_1 to M3_n, the number n of gate impedance elements R31_1 to R31_n, the number n of gate-body impedance elements R32_1 to R32_n, and the number n of body impedance elements R33_1 to R33_n are, for example, equal to each other. The dimensions of switching transistors M3_1 to M3_n are, for example, equal to each other. The impedance values ​​of gate-body impedance elements R32_1 to R32_n are smaller than the impedance values ​​of body impedance elements R33_1 to R33_n in order to ensure the operating voltage required for the switching circuit 300 to operate normally. For example (but not limited to), the impedance values ​​of each body impedance element R33_1 to R33_n are at least 1.5 times the respective impedance values ​​of each gate body impedance element R32_1 to R32_n, and the impedance values ​​of the gate impedance elements R31_1 to R31_n, the gate body impedance elements R32_1 to R32_n, and the body impedance elements R33_1 to R33_n are all in the range of kilohms (kΩ) to megahms (MΩ).

[0032] Based on actual designs, in several application examples such as those applied to radio frequency switching circuits, the impedance values ​​of each gate impedance element R31_1 to R31_n are approximately equal to the impedance values ​​of each body impedance element R33_1 to R33_n. "Approximately equal" means, for example, that the difference between the impedance values ​​of the gate impedance elements R31_1 to R31_n and the impedance values ​​of the body impedance elements R33_1 to R33_n is within ±10%.

[0033] Based on actual designs, in several applications, such as in coaxial cable system circuits, the impedance values ​​of each gate impedance element R31_1 to R31_n are smaller than the impedance values ​​of each gate body impedance element R32_1 to R32_n. For example (but not limited to), the impedance values ​​of each gate body impedance element R32_1 to R32_n are at least 1.5 times the impedance value of each gate impedance element R31_1 to R31_n.

[0034] When an ESD event occurs, each gate-body impedance element R32_1 to R32_n forms a voltage transmission path and turns on the corresponding switching transistor. For example, in response to an ESD event occurring at connection pad PAD3, the ESD voltage of connection pad PAD3 is connected to the gates of switching transistors M3_1 to M3_n via the parasitic capacitance between the gate and drain of switching transistor M3_1, turning on switching transistors M3_1 to M3_n. Also, the ESD voltage of connection pad PAD3 is connected to the bulk terminal of switching transistor M3_1, and the gate-body impedance element R32_1 provides a voltage transmission path for transmitting the ESD voltage of the bulk terminal of switching transistor M3_1 to the gate of switching transistor M3_1. Therefore, even if the gate-source voltage Vgs of switching transistors M3_1 to M3_n is non-uniform, the gate-body impedance elements R32_1 to R32_n transmit the ESD voltage from the bulk terminal to the gate (the voltage transmission path can increase the voltage at the control terminal of the corresponding switching transistor), thereby enabling the switching transistors M3_1 to M3_n to transmit the ESD current in real time between the signal transmission ports SP31 and SP32.

[0035] In summary, when an ESD event occurs, the gate-body impedance elements R32_1 to R32_n transmit the ESD voltage connected to the bulk terminals of the switching transistors M3_1 to M3_n to the control terminals of the switching transistors M3_1 to M3_n, thereby effectively turning on the switching transistors M3_1 to M3_n. Therefore, when an ESD event occurs, the switching transistors M3_1 to M3_n form a low-impedance path between the signal transmission ports SP31 and SP32 to transmit the ESD current, preventing damage to the integrated circuit due to ESD.

[0036] Figure 4 is a schematic circuit diagram of a switching circuit 400 according to another embodiment of the present disclosure. The switching circuit 400 shown in Figure 4 includes a signal transmission port SP41, a signal transmission port SP42, a gate impedance element R41, a plurality of switching transistors (e.g., the switching transistors M4_1, M4_2, ..., M4_n-1, and M4_n shown in Figure 4), a plurality of gate-body impedance elements (e.g., the gate-body impedance elements R42_1, R42_2, ..., R42_n-1, and R42_n shown in Figure 4), and a plurality of body impedance elements (e.g., the body impedance elements R43_1, R43_2, ..., R43_n-1, and R43_n shown in Figure 4). For the gate drive circuit 40, gate voltage Vg4, connection pad PAD4, reference voltage terminal REF4, switching circuit 400, signal transmission port SP41, signal transmission port SP42, switching transistors M4_1~M4_n, gate-body impedance elements R42_1~R42_n, and body impedance elements R43_1~R43_n shown in Figure 4, please refer to the related explanations for the gate drive circuit 30, gate voltage Vg3, connection pad PAD3, reference voltage terminal REF3, switching circuit 300, signal transmission port SP31, signal transmission port SP32, switching transistors M3_1~M3_n, gate-body impedance elements R32_1~R32_n, and body impedance elements R33_1~R33_n shown in Figure 3, and therefore the same details will not be repeated.

[0037] In contrast to the gate impedance elements R31_1 to R31_n shown in Figure 3, the first terminal of the gate impedance element R41 shown in Figure 4 is connected to the control terminal (e.g., the gate) of the switching transistors M4_1 to M4_n. The output terminal of the gate drive circuit 40 is connected to the second terminal of the gate impedance element R41, providing the gate voltage Vg4 to the control terminal of the switching transistors M4_1 to M4_n. In other words, the switching circuit 300 in the embodiment of Figure 3 includes gate impedance elements R31_1 to R31_n individually connected to the switching transistors M3_1 to M3_n, whereas the switching circuit 400 in the embodiment of Figure 4 includes only one gate impedance element R41 connected to the switching transistors M4_1 to M4_n. In other embodiments, the gate impedance elements may be omitted.

[0038] Figures 5 to 14 are schematic circuit diagrams of gate-body impedance elements 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, and 1400 according to different embodiments of the present disclosure. The gate-body impedance elements 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, and 1400 shown in Figures 5 to 14 can function as one of several implementation examples of gate-body impedance elements R32_1 to R32_n shown in Figure 3. For the gate-body impedance elements 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, and 1400 shown in Figures 5 to 14, you can refer to the relevant description of any of the gate-body impedance elements R32_1 to R32_n shown in Figure 3. For the switching transistors 501, 601, 701, 801, 901, 1001, 1101, 1201, 1301, and 1401 shown in Figures 5 to 14, you can refer to the relevant description of any of the switching transistors M3_1 to M3_n shown in Figure 3. Alternatively, the gate-body impedance elements 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, and 1400 shown in Figures 5 to 14 can function as one of several implementation examples of the gate-body impedance elements R42_1 to R42_n shown in Figure 4. For the gate-body impedance elements 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, and 1400 shown in Figures 5 to 14, refer to the relevant description of any of the gate-body impedance elements R42_1 to R42_n shown in Figure 4. For switching transistors 501, 601, 701, 801, 901, 1001, 1101, 1201, 1301, and 1401 shown in Figures 5 to 14, refer to the related explanation for any of the switching transistors M4_1 to M4_n shown in Figure 4.

[0039] In the embodiment shown in Figure 5, the gate-body impedance element 500 includes a capacitor 510. The first terminal of the capacitor 510 is connected to the control terminal (e.g., the gate) of the switching transistor 501. The second terminal of the capacitor 510 is connected to the bulk terminal of the switching transistor 501.

[0040] In the embodiment shown in Figure 6, the gate-body impedance element 600 includes a transistor 610. The control terminal (e.g., gate) of transistor 610 is connected to the control terminal (e.g., gate) of switching transistor 601. The first terminal (e.g., drain) of transistor 610 is connected to the bulk terminal of switching transistor 601. The bulk terminal and the second terminal (e.g., source) of transistor 610 are electrically floating.

[0041] In the embodiment shown in Figure 7, the gate-body impedance element 700 includes a transistor 710. The control terminal (e.g., gate) of transistor 710 is connected to the control terminal (e.g., gate) of switching transistor 701. The first terminal (e.g., source) of transistor 710 is connected to the bulk terminal of switching transistor 701. The bulk terminal and the second terminal (e.g., drain) of transistor 710 are electrically floating.

[0042] In the embodiment shown in Figure 8, the gate-body impedance element 800 includes a transistor 810. The control terminal (e.g., gate) of transistor 810 is connected to the control terminal (e.g., gate) of switching transistor 801. The first terminal (e.g., drain) of transistor 810 is connected to the bulk terminal of switching transistor 801. The second terminal (e.g., source) of transistor 810 is connected to the first terminal of transistor 810. In some applications, the bulk terminal of transistor 810 is electrically floating. In other applications, the bulk terminal of transistor 810 is connected to the first terminal of transistor 810.

[0043] In the embodiment shown in Figure 9, the gate-body impedance element 900 includes a transistor 910. The first terminal of transistor 910 (e.g., drain) is connected to the control terminal (e.g., gate) of switching transistor 901. The second terminal of transistor 910 (e.g., source) is connected to the bulk terminal of switching transistor 901. The control terminal (e.g., gate) of transistor 910 is connected to the second terminal of transistor 910. In some applications, the bulk terminal of transistor 910 is electrically floating. In other applications, the bulk terminal of transistor 910 is connected to the second terminal of transistor 910.

[0044] In the embodiment shown in Figure 10, the gate-body impedance element 1000 includes a diode 1010. The first terminal of the diode 1010 (e.g., cathode) is connected to the control terminal (e.g., gate) of the switching transistor 1001. The second terminal of the diode 1010 (e.g., anode) is connected to the bulk terminal of the switching transistor 1001.

[0045] In the embodiment shown in Figure 11, the gate-body impedance element 1100 includes a diode 1110 and a gate-body resistor 1120. The first terminal (e.g., cathode) of the diode 1110 is connected to the control terminal (e.g., gate) of the switching transistor 1101. The second terminal (e.g., anode) of the diode 1110 is connected to the bulk terminal of the switching transistor 1101. The first and second terminals of the gate-body resistor 1120 are connected to the first and second terminals of the diode 1110, respectively.

[0046] In the embodiment shown in Figure 12, the gate-body impedance element 1200 includes a transistor 1230 and a driver 1250. In some applications, based on actual design, the driver 1250 may be a drive circuit configured outside the switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4). The first terminal of transistor 1230 (e.g., drain) is connected to the control terminal (e.g., gate) of switching transistor 1201. The second terminal of transistor 1230 (e.g., source) is connected to the bulk terminal of switching transistor 1201. The driver 1250 is connected to the control terminal of transistor 1230 and provides a gate voltage, thereby making the gate-body impedance value provided by transistor 1230 smaller than the impedance values ​​of the body impedance elements of switching transistor 1201 (e.g., body impedance elements R33_1 to R33_n shown in Figure 3, or body impedance elements R43_1 to R43_n shown in Figure 4).

[0047] Based on actual designs, in some applications, the driver 1250 can also function as a body drive circuit for the switching transistor 1201. The output terminal of the driver 1250 is connected to the second terminal of the body impedance element of the switching transistor 1201 (e.g., body impedance elements R33_1 to R33_n shown in Figure 3, or body impedance elements R43_1 to R43_n shown in Figure 4). The first terminal of the driver 1250 is connected to the operating voltage terminal VCC12. The second terminal of the driver 1250 is connected to the reference voltage terminal REF12. The driver 1250 may also provide a body voltage (e.g., 0 volts or a negative voltage) to the bulk terminals of the switching transistor 1201 (e.g., switching transistors M3_1 to M3_n shown in Figure 3, or switching transistors M4_1 to M4_n shown in Figure 4). The gate voltage of the switching transistor 1201 is independent of the body voltage of the switching transistor 1201. Based on actual designs, in some application examples, the body voltage supplied to the switching transistor 1201 by the driver 1250 may also be the gate voltage supplied to the transistor 1230 by the driver 1250.

[0048] In the embodiment shown in Figure 13, the gate-body impedance element 1300 includes a transistor 1330, a resistor 1340, and a driver 1350. The first terminal of transistor 1330 (e.g., drain) is connected to the control terminal (e.g., gate) of switching transistor 1301. The second terminal of transistor 1330 (e.g., source) is connected to the bulk terminal of switching transistor 1301. The first terminal of resistor 1340 is connected to the control terminal of transistor 1330. The second terminal of resistor 1340 is connected to the driver 1350. The driver 1350 provides a gate voltage to the control terminal of transistor 1230 via resistor 1340. The driver 1350 shown in Figure 13 can refer to the related description of the driver 1250 shown in Figure 12. Furthermore, resistor 1340 can prevent surges generated by the driver 1350.

[0049] In the embodiment shown in Figure 14, the gate-body impedance element 1400 includes a driver 1410, a resistor 1420, a transistor 1430, a resistor 1440, and a driver 1450. In some applications, based on actual design, the drivers 1410 and / or 1450 may be drive circuits configured outside the switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4). The first terminal (e.g., drain) of transistor 1430 is connected to the control terminal (e.g., gate) of switching transistor 1401. The second terminal (e.g., source) of transistor 1430 is connected to the bulk terminal of switching transistor 1401. The resistor 1440 is connected between the control terminal of transistor 1430 and the driver 1450. The driver 1450 provides a gate voltage to the control terminal of transistor 1430 via the resistor 1440. The first terminal of resistor 1420 is connected to the bulk terminal of transistor 1430. The driver 1410 is connected to the second terminal of the resistor 1420 and provides the body voltage. Additionally, the resistor 1440 can prevent surges generated by the driver 1450, and the resistor 1420 can prevent surges generated by the driver 1410.

[0050] Based on actual designs, in some applications, the driver 1410 can also function as a body drive circuit for switching transistors 1401 (e.g., switching transistors M3_1 to M3_n shown in Figure 3, or switching transistors M4_1 to M4_n shown in Figure 4). The output terminal of the driver 1410 is connected to the second terminal of the body impedance element of the switching transistor 1401 (e.g., body impedance elements R33_1 to R33_n shown in Figure 3, or body impedance elements R43_1 to R43_n shown in Figure 4). The first terminal of the driver 1410 is connected to the operating voltage terminal VCC14. The second terminal of the driver 1410 is connected to the reference voltage terminal REF14. The driver 1410 can provide a body voltage (e.g., 0 volts or a negative voltage) to the bulk terminal of the switching transistor 1401 (e.g., switching transistors M3_1 to M3_n shown in Figure 3, or switching transistors M4_1 to M4_n shown in Figure 4). The gate voltage of switching transistor 1401 is independent of the body voltage of switching transistor 1401. Based on actual designs, in some applications, the body voltage supplied to switching transistor 1401 by driver 1410 may also be the gate voltage supplied to transistor 1430 by driver 1410.

[0051] Figure 15 is a schematic circuit diagram of a gate drive circuit 1500 according to one embodiment of the present disclosure. The gate drive circuit 1500 shown in Figure 15 may be one of many implementation examples of the gate drive circuit 30 shown in Figure 3. The gate drive circuit 1500 and gate voltage Vg15 shown in Figure 15 can be referenced to the related description of the gate drive circuit 30 and gate voltage Vg3 shown in Figure 3. Alternatively, the gate drive circuit 1500 shown in Figure 15 may be one of many implementation examples of the gate drive circuit 40 shown in Figure 4. The gate drive circuit 1500 and gate voltage Vg15 shown in Figure 15 can be referenced to the related description of the gate drive circuit 40 and gate voltage Vg4 shown in Figure 4.

[0052] In the embodiment shown in Figure 15, the gate drive circuit 1500 includes a P-type transistor Mp15 and an N-type transistor Mn15. The P-type transistor Mp15 and the N-type transistor Mn15 are connected in series between the operating voltage terminal VCC15 and the reference voltage terminal REF15. The reference voltage terminal REF15 shown in Figure 15 can be referred to in relation to the explanation of the reference voltage terminal REF3 shown in Figure 3, or in relation to the explanation of the reference voltage terminal REF4 shown in Figure 4. In detail, the control terminal (e.g., gate) of the P-type transistor Mp15 and the N-type transistor Mn15 is controlled by the control voltage Vc15. Based on the actual design, in some application examples, the control voltage Vc15 is, for example, 0V, 2.3V, 3V, or other voltage levels. The first terminal (e.g., source) of the P-type transistor Mp15 is connected to the operating voltage terminal VCC15. The second terminal (e.g., drain) of the P-type transistor Mp15 outputs the gate voltage Vg15 to a switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4). The first terminal (e.g., drain) of the N-type transistor Mn15 is connected to the second terminal of the P-type transistor Mp15. The second terminal (e.g., source) of the N-type transistor Mn15 is connected to the reference voltage terminal REF15.

[0053] Figure 16 is a schematic circuit diagram of a gate drive circuit 1610 and a body drive circuit 1620 according to one embodiment of the present disclosure. The gate drive circuit 1610 shown in Figure 16 may be one of many implementation examples of the gate drive circuit 30 shown in Figure 3. The gate drive circuit 1610 and gate voltage Vg161 shown in Figure 16 can be referenced to the related description of the gate drive circuit 30 and gate voltage Vg3 shown in Figure 3. Alternatively, the gate drive circuit 1610 shown in Figure 16 may be one of many implementation examples of the gate drive circuit 40 shown in Figure 4. The gate drive circuit 1610 and gate voltage Vg161 shown in Figure 16 can be referenced to the related description of the gate drive circuit 40 and gate voltage Vg4 shown in Figure 4.

[0054] In the embodiment shown in Figure 16, the gate drive circuit 1610 includes transistors Mp161, Mp162, Mp163, Mn161, Mn162, and Mn163, and resistors R161 and R162. The control terminals (e.g., gates) of transistors Mp161 and Mn161 are controlled by a control voltage Vc16. Based on actual designs, in some applications, the control voltage Vc16 is, for example, 0V, 2.3V, 3V, or other voltage levels. The first terminal (e.g., source) of transistor Mp161 is connected to the control terminal (e.g., gate) of transistor Mp163. The first terminal of transistor Mn161 (e.g., drain) is connected to the second terminal of transistor Mp161 (e.g., drain). The second terminal of transistor Mn161 (e.g., source) is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source).

[0055] The first terminal of transistor Mp162 (e.g., source) is connected to the control terminal of transistor Mp163. The control terminal of transistor Mp162 (e.g., gate) is connected to the second terminal of transistor Mp161. The first terminal of resistor R161 is connected to the second terminal of transistor Mp162 (e.g., drain). The second terminal of resistor R161 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source).

[0056] The first terminal (e.g., source) of transistor Mp163 is connected to the operating voltage terminal VCC3. The second terminal (e.g., drain) of transistor Mp163 is connected to the control terminal of transistor Mp163. The first terminal (e.g., drain) of transistor Mn162 is connected to the second terminal of transistor Mp163. The control terminal (e.g., gate) of transistor Mn162 is connected to the second terminal of transistor Mp161. The second terminal (e.g., source) of transistor Mn162 outputs the gate voltage Vg161 to a switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4). The first terminal (e.g., drain) of transistor Mn163 is connected to the second terminal of transistor Mn162. The second terminal (e.g., source) of transistor Mn163 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). The first terminal of resistor R162 is connected to the second terminal of transistor Mn162. The second terminal of resistor R162 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source).

[0057] The switching circuit also includes a body drive circuit 1620. The output terminal of the body drive circuit 1620 is connected to the second terminals of the body impedance elements R33_1 to R33_n, providing a body voltage independent of the gate voltage Vg161 to the bulk terminals of the switching transistors M3_1 to M3_n. Based on the actual design, in some application examples, the first terminal of the body drive circuit is connected to the operating voltage terminal, and the second terminal of the body drive circuit is connected to the reference voltage terminal. For example, the body drive circuit can be described in relation to the gate drive circuit 1500 shown in Figure 15.

[0058] In the embodiment shown in Figure 16, the body drive circuit 1620 includes a switch 1621. The first terminal of the switch 1621 is connected to the second terminals of each of the body impedance elements R33_1 to R33_n. The second terminal of the switch 1621 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). The control terminal of the switch 1621 is connected to the second terminal of the transistor Mp163 to receive the gate voltage Vg162. In other applications, the switch 1621 may be omitted, and the second terminals of each of the body impedance elements R33_1 to R33_n may be directly connected to a reference voltage rail (not shown).

[0059] Figure 17 is a schematic circuit diagram of a gate drive circuit 1710 and a body drive circuit 1720 according to one embodiment of the present disclosure. The gate drive circuit 1710 shown in Figure 17 may be one of many implementation examples of the gate drive circuit 30 shown in Figure 3. The gate drive circuit 1710 and gate voltage Vg171 shown in Figure 17 can be referenced to the related description of the gate drive circuit 30 and gate voltage Vg3 shown in Figure 3. Alternatively, the gate drive circuit 1710 shown in Figure 17 may be one of many implementation examples of the gate drive circuit 40 shown in Figure 4. The gate drive circuit 1710 and gate voltage Vg171 shown in Figure 17 can be referenced to the related description of the gate drive circuit 40 and gate voltage Vg4 shown in Figure 4.

[0060] In the embodiment shown in Figure 17, the gate drive circuit 1710 includes transistors Mp171, Mp172, Mp173, Mn171, Mn172, Mn173, and Mn174, and resistors R171, R172, and R173. The control terminals (e.g., gates) of transistors Mp171 and Mn171 are controlled by a control voltage Vc171. Based on actual designs, in some applications, the control voltage Vc171 is, for example, 0V, 2.3V, 3V, or other voltage levels. The first terminal (e.g., source) of transistor Mp171 is connected to the control terminal (e.g., gate) of transistor Mp173. The first terminal (e.g., drain) of transistor Mn171 is connected to the second terminal (e.g., drain) of transistor Mp171. The second terminal of transistor Mn171 (e.g., source) is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source).

[0061] The first terminal of transistor Mp172 (e.g., source) is connected to the control terminal of transistor Mp173. The control terminal of transistor Mp172 (e.g., gate) is connected to the second terminal of transistor Mp171. The second terminal of transistor Mp172 (e.g., drain) is connected to the first terminal of resistor R171 and the control terminal of transistor Mn172 (e.g., gate). The second terminal of resistor R171 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). The first terminal of transistor Mn172 (e.g., drain) is connected to the control terminal of transistor Mn174 (e.g., gate). The second terminal of transistor Mn172 (e.g., source) is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source).

[0062] The first terminal (e.g., source) of transistor Mp173 is connected to the operating voltage terminal VCC3. The second terminal (e.g., drain) of transistor Mp173 is connected to the control terminal of transistor Mp173. The first terminal (e.g., drain) of transistor Mn173 is connected to the second terminal of transistor Mp173. The control terminal (e.g., gate) of transistor Mn173 is connected to the second terminal of transistor Mp171. The second terminal (e.g., source) of transistor Mn173 outputs the gate voltage Vg171 to a switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4). In some applications based on actual designs, when the switching circuit is operating in off mode, the gate voltage Vg171 is, for example, -2.3V, -3V, or other negative voltage levels, and when the switching circuit is operating in on mode, the gate voltage Vg171 is, for example, 2.3V, 3V, or other voltage levels. The first terminal of transistor Mn174 (e.g., drain) is connected to the second terminal of transistor Mn173. The second terminal of transistor Mn174 (e.g., source) receives the control voltage Vc172. In some applications based on actual designs, when the switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4) is operating in off mode, the control voltage Vc172 is, for example, -2.3V, -3V, or other negative voltage levels. When the switching circuit is operating in on mode, the control voltage Vc172 is, for example, 0V. The first terminal of resistor R172 is connected to the control terminal of transistor Mn174. The first terminal of resistor R173 is connected to the second terminal of transistor Mn173. The second terminals of resistors R172 and R173 are connected to a reference voltage rail (e.g., reference voltage terminal REF3 or other reference voltage source).

[0063] The switching circuit also includes a body drive circuit 1720. The output terminal of the body drive circuit 1720 is connected to the second terminals of the body impedance elements R33_1 to R33_n, providing a body voltage independent of the gate voltage Vg171 to the bulk terminals of the switching transistors M3_1 to M3_n. The body voltage provided to the bulk terminals of the switching transistors M3_1 to M3_n by the body drive circuit 1720 is 0V or less. For example, when the switching circuit (e.g., the switching circuit 300 shown in Figure 3 or the switching circuit 400 shown in Figure 4) is operating in off mode, the body voltage is, for example, -2.3V, -3V, or other negative voltage levels, and when the switching circuit is operating in on mode, the body voltage is, for example, 0V.

[0064] In the embodiment shown in Figure 17, the body drive circuit 1720 includes a switch 1721, transistors Mp175, Mn176, Mn177, and resistor R174, and the body voltage is controlled by the switch 1721 and transistor Mn177. The first terminal of the switch 1721 is connected to the second terminals of each body impedance element R33_1 to R33_n. The second terminal of the switch 1721 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). The control terminal of the switch 1721 is connected to the second terminal of transistor Mn173 and receives the gate voltage Vg171.

[0065] The control terminal (e.g., gate) of transistor Mp175 is connected to the second terminal of transistor Mp171 to receive the gate voltage Vg173. The first terminal (e.g., source) of transistor Mp175 is connected to the second terminal of transistor Mp173 to receive the gate voltage Vg172. The control terminal (e.g., gate) of transistor Mn176 is connected to the second terminal (e.g., drain) of transistor Mp175. The first terminal (e.g., drain) of transistor Mn1765 is connected to the control terminal (e.g., gate) of transistor Mn177. The second terminal (e.g., source) of transistor Mn176 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). The first terminal of resistor R174 is connected to the control terminal of transistor Mn177. The second terminal of resistor R174 is connected to a reference voltage rail (e.g., reference voltage terminal REF3 or another reference voltage source). The first terminal (e.g., drain) of transistor Mn1775 is connected to the second terminals of each body impedance element R33_1 to R33_n. The second terminal (e.g., source) of transistor Mn177 receives the control voltage Vc173. In some applications based on actual designs, when the switching circuit (e.g., switching circuit 300 shown in Figure 3 or switching circuit 400 shown in Figure 4) is operating in off mode, the control voltage Vc173 is, for example, -2.3V, -3V, or other negative voltage levels. When the switching circuit is operating in on mode, the control voltage Vc173 is, for example, 0V. Furthermore, the source of the control voltage Vc173 may be the same as or different from the source of the control voltage Vc172, but it is preferable that they be different.

[0066] Although the present invention is disclosed in the embodiments described above, these embodiments do not limit the present invention. Those skilled in the art can make changes and modifications without departing from the spirit and scope of the present invention. Accordingly, the scope of protection of the present invention is defined by the appended utility model claims. [Industrial applicability]

[0067] The switching circuit of this disclosure can be applied to any integrated circuit. [Explanation of Symbols]

[0068] 20, 30, 40, 1500, 1610, 1710: Gate drive circuit 100: Radio frequency integrated circuit 110, 120: Series path of radio frequency switches 130, 140: Radio frequency switch shunt path 200, 300, 400: Switching circuits 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, R32_1, R32_2, R32_n-1, R32_n, R42_1, R42_2, R42_n-1, R42_n: Gate-body impedance elements 501, 601, 701, 801, 901, 1001, 1101, 1201, 1301, 1401, M2_1, M2_2, M2_n-1, M2_n, M3_1, M3_2, M3_n-1, M3_n, M4_1, M4_2, M4_n-1, M4_n: Switching transistors 510: Capacitor 610, 710, 810, 910, 1230, 1330, 1430, Mn161, Mn162, Mn163, Mn171, Mn172, Mn173, Mn174, Mn176, Mn177, Mp161, Mp162, Mp163, Mp171, Mp172, Mp173, Mp175: Transistors 1010, 1110: Diode 1120: Gate Body Resistor 1250, 1350, 1410, 1450: Driver 1340, 1420, 1440, R161, R162, R171, R172, R173, R174: Resistors 1620, 1720: Body drive circuit 1621, 1721: Switch Mn15: N-type transistor Mp15: P-type transistor PAD2, PAD3, PAD4: Connection pads R2_1, R2_2, R2_n-1, R2_n, R31_1, R31_2, R31_n-1, R31_n, R41: Gate impedance elements R33_1, R33_2, R33_n-1, R33_n, R43_1, R43_2, R43_n-1, R43_n: Body impedance elements REF2, REF3, REF4, REF12, REF14, REF15: Reference voltage terminals RF1, RF2, RFC: Radio frequency connection pads SP21, SP22, SP31, SP32, SP41, SP42: Signal transmission ports Vc15, Vc16, Vc171, Vc172, Vc173: Control voltage VCC3, VCC12, VCC14, VCC15: Operating voltage terminals Vg3, Vg4, Vg15, Vg161, Vg162, Vg171, Vg172, Vg173: Gate voltage

Claims

1. The first signal transmission port, A second signal transmission port, A plurality of switching transistors connected in series between the first signal transmission port and the second signal transmission port, At least one gate drive circuit, wherein the output terminal of the at least one gate drive circuit is connected to at least one control terminal of the plurality of switching transistors and provides a first gate voltage, the first terminal of the at least one gate drive circuit is connected to an operating voltage terminal, and the second terminal of the at least one gate drive circuit is connected to a reference voltage terminal, A plurality of body impedance elements, wherein the first terminal of each body impedance element is connected to the bulk terminal of the corresponding switching transistor among the plurality of switching transistors, and the second terminal of each body impedance element is connected to the reference voltage terminal, A plurality of gate-body impedance elements, wherein the first terminal of each gate-body impedance element is connected to the control terminal of the corresponding switching transistor among the plurality of switching transistors, and the second terminal of each gate-body impedance element is connected to the bulk terminal of the corresponding switching transistor among the plurality of switching transistors, A switching circuit, including one.

2. The present invention further includes a gate impedance element, the first terminal of which is connected to the control terminal of at least one of the plurality of switching transistors, and the output terminal of the at least one gate drive circuit is connected to the second terminal of which is connected to the gate impedance element, thereby providing the first gate voltage to the control terminal of at least one of the plurality of switching transistors. The switching circuit according to claim 1.

3. The circuit further includes a plurality of gate impedance elements, the first terminal of each gate impedance element being connected to the control terminal of the corresponding switching transistor among the plurality of switching transistors, the output terminal of the at least one gate drive circuit being connected to the second terminal of at least one of the gate impedance elements, and providing the first gate voltage to the control terminal of at least one of the plurality of switching transistors. The switching circuit according to claim 1.

4. The present invention further includes at least one body drive circuit, the output terminal of the at least one body drive circuit being connected to a second terminal of at least one of the body impedance elements, providing a first body voltage independent of the first gate voltage to at least one of the bulk terminals of the plurality of switching transistors, the first terminal of the at least one body drive circuit being connected to the operating voltage terminal, and the second terminal of the at least one body drive circuit being connected to the reference voltage terminal. The switching circuit according to claim 1.

5. The first body voltage provided by the at least one body drive circuit is 0V or less. The switching circuit according to claim 4.

6. The impedance value of each gate-body impedance element is smaller than the impedance value of each body impedance element. The switching circuit according to claim 1.

7. The impedance value of each gate impedance element is approximately equal to the impedance value of each body impedance element. The switching circuit according to claim 6.

8. The impedance value of each gate impedance element is smaller than the impedance value of each gate body impedance element. The switching circuit according to claim 6.

9. Each of the gate-body impedance elements is, A gate body resistor, wherein the first and second terminals of the gate body resistor are connected to the corresponding control terminal and bulk terminal of the plurality of switching transistors, respectively. Or, A capacitor wherein the first terminal and the second terminal of the capacitor are connected to the control terminal and the bulk terminal of the corresponding switching transistor among the plurality of switching transistors, respectively. The switching circuit according to claim 1, including the following:

10. Each of the gate-body impedance elements is, A transistor having a first terminal, a second terminal, and a control terminal, wherein the control terminal and the first terminal of the transistor are connected to the control terminal and the bulk terminal of the corresponding switching transistor among the plurality of switching transistors, respectively. The switching circuit according to claim 1, including the following:

11. The second terminal of the transistor is connected to the first terminal of the transistor, or the bulk terminal of the transistor is connected to the first terminal of the transistor. The switching circuit according to claim 10.

12. Each of the gate-body impedance elements is, A transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal and the second terminal of the transistor are connected to the control terminal and the bulk terminal of the corresponding switching transistor among the plurality of switching transistors, respectively, and the control terminal of the transistor is connected to the second terminal of the transistor, The switching circuit according to claim 1, including the following:

13. The bulk terminal of the transistor is connected to the second terminal of the transistor. The switching circuit according to claim 12.

14. Each of the gate-body impedance elements is, The device includes a diode, the cathode and anode of which are connected to the control terminal and bulk terminal of the corresponding switching transistor among the plurality of switching transistors, respectively. The switching circuit according to claim 1.

15. Each of the gate-body impedance elements is, The diode further includes a gate body resistor, the first and second terminals of which are connected to the cathode and anode of the diode, respectively. The switching circuit according to claim 14.

16. Each of the gate-body impedance elements is, A transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal and the second terminal of the transistor are connected to the control terminal and the bulk terminal of the corresponding switching transistor among the plurality of switching transistors, respectively. A first driver connected to the control terminal of the transistor and providing a second gate voltage, The switching circuit according to claim 1, including the following:

17. Each of the gate-body impedance elements is, The device further includes a first resistor, the first terminal of which is connected to the control terminal of the transistor, and the second terminal of which is connected to the first driver. The switching circuit according to claim 16.

18. The present invention further includes at least one body drive circuit, the output terminal of the at least one body drive circuit being connected to a second terminal of at least one of the body impedance elements, providing a first body voltage independent of the first gate voltage to at least one of the bulk terminals of the plurality of switching transistors, the first terminal of the at least one body drive circuit being connected to the operating voltage terminal, the second terminal of the at least one body drive circuit being connected to the reference voltage terminal, the at least one body drive circuit being the first driver, and the first body voltage being the second gate voltage. The switching circuit according to claim 17.

19. Each of the gate-body impedance elements is, A second resistor, the first terminal of which is connected to the bulk terminal of the transistor, A second driver connected to the second terminal of the second resistor and providing a second body voltage, The switching circuit according to claim 17, further comprising:

20. The present invention further includes at least one body drive circuit, the output terminal of the at least one body drive circuit being connected to a second terminal of at least one of the body impedance elements, providing a first body voltage independent of the first gate voltage to the bulk terminal of at least one of the plurality of switching transistors, the first terminal of the at least one body drive circuit being connected to the operating voltage terminal, the second terminal of the at least one body drive circuit being connected to the reference voltage terminal, the at least one body drive circuit being the second driver, and the first body voltage being the second body voltage. The switching circuit according to claim 19.

21. When an electrostatic discharge event occurs, each of the gate-body impedance elements forms a voltage transmission path and turns on the corresponding switching transistor. The switching circuit according to claim 1.

22. The switching circuit is placed on a silicon-on-insulator chip. The switching circuit according to claim 1.

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