Chamber configurations for epitaxial deposition and advanced epitaxial film applications

By optimizing the structure of the processing chamber and the gas flow system, the challenges of temperature control and production efficiency in the prior art are solved, achieving more efficient semiconductor processing and lower component replacement costs.

JP7624076B2Active Publication Date: 2025-01-29APPLIED MATERIALS INC
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Patent Information

Application Number
JP2023543392
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-05-11
Filing Date
2022-04-20
Publication Date
2025-01-29
Estimated Expiration
2042-04-20

AI Technical Summary

Technical Problem

Existing semiconductor processing chambers have difficulty meeting the requirements of next-generation equipment in efficient production and temperature control, especially in improving production efficiency and temperature uniformity.

Method used

A new processing chamber structure is designed, including an upper lamp module, a lower lamp module, a substrate supporter, an upper window, a lower window and a chamber body assembly. By optimizing the hot air flow and temperature measurement system, more uniform thermal control and gas flow are achieved, reducing component replacement costs.

Benefits of technology

Improves production efficiency and output, while reducing component replacement costs, achieving more uniform temperature control and higher production quality.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The present disclosure generally relates to a processing chamber for processing semiconductor substrates. The processing chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an injection ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly includes a vertically oriented lamp opening for locating a heat lamp. The injection ring includes a gas injector disposed therethrough, and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injector is disposed above the substrate transfer passage opposite the lower chamber exhaust passage and the one or more upper chamber exhaust passages.
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Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to apparatus and methods for preparing semiconductor substrates. More specifically, the apparatus disclosed herein relates to chamber bodies and associated components used in semiconductor processing. [Background technology]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated and microdevices. During processing, the substrate is placed on a susceptor in a processing chamber. The susceptor is supported by a support shaft that is rotatable about a central axis. Precise control of heat sources, such as multiple heat lamps positioned above and below the substrate, allows the substrate to be heated within very tight tolerances. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0003] The ability to accurately control the substrate temperature within a processing chamber has a significant impact on throughput and production yield. Conventional processing chambers have struggled to meet the increasing demand for improved production yields and faster throughput while still meeting the temperature control standards required for the manufacture of next generation devices.

[0004] Thus, there is a need for improvements in processing chambers and associated components. Summary of the Invention

[0005] The embodiments described herein include a process chamber for substrate processing. The process chamber includes an upper lamp module, a lower lamp module, a substrate support, an upper window, a lower window, and a chamber body assembly. The substrate support is disposed between the upper lamp module and the lower lamp module. The upper window is disposed between the upper lamp module and the substrate support. The lower window is disposed between the lower lamp module and the substrate support. The chamber body assembly is disposed between the upper lamp module and the lower lamp module and forms a portion of the process space. The chamber body assembly includes a substrate transfer passage disposed through the chamber body assembly. A lower chamber exhaust passage is disposed through the chamber body assembly opposite the substrate transfer passage. One or more upper chamber exhaust passages are disposed through the chamber body assembly. Each of the one or more upper chamber exhaust passages has an upper chamber exhaust passage opening disposed above the lower chamber exhaust passage. One or more injector passages are disposed through the chamber body assembly above the substrate transfer passage.

[0006] Another embodiment of a processing chamber for substrate processing includes an upper lamp module, a lower lamp module, a substrate support, an upper window, a lower window, and a chamber body assembly. The upper lamp module includes an upper module body having a top surface and a bottom surface. A plurality of lamp openings are disposed from the bottom surface to the top surface. A substrate support is disposed between the upper lamp module and the lower lamp module. An upper window is disposed between the upper lamp module and the substrate support. A lower window is disposed between the lower lamp module and the substrate support. A chamber body assembly is disposed between the upper lamp module and the lower lamp module and forms a portion of the processing space. The chamber body assembly has a lower chamber exhaust passage disposed through the chamber body assembly opposite the substrate transfer passage, the lower chamber exhaust passage including a substrate transfer passage disposed through the chamber body assembly. One or more upper chamber exhaust passages are disposed through the chamber body assembly. Each of the one or more upper chamber exhaust passages has an upper chamber exhaust passage opening disposed above the lower chamber exhaust passage. One or more injector passages are disposed through the chamber body assembly above the substrate transfer passage.

[0007] In yet another embodiment, a process chamber for substrate processing includes an upper lamp module, a lower lamp module, a substrate support, an upper window, a lower window, and a chamber body assembly. The upper lamp module includes an upper module body having a top surface and a bottom surface. A plurality of lamp openings are disposed from the bottom surface of the upper lamp module toward the top surface. A substrate support is disposed between the upper lamp module and the lower lamp module. An upper window is disposed between the upper lamp module and the substrate support. A lower window is disposed between the lower lamp module and the substrate support. A chamber body assembly is disposed between the upper lamp module and the lower lamp module and forms a portion of a processing space. The chamber body assembly includes a substrate transfer passage disposed therethrough. One or more upper chamber exhaust passages are disposed through the chamber body assembly. Each of the one or more upper chamber exhaust passages has an upper chamber exhaust passage opening in fluid communication with the processing space. A lower chamber exhaust passage is disposed through the chamber body assembly below the upper chamber exhaust passage opening. One or more injector passages are disposed above the substrate transfer passage.

[0008] So that the above-described features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may be permitted. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram of a processing chamber according to an embodiment of the present disclosure. [Figure 2A] FIG. 2 is a schematic bottom view of an upper lamp assembly according to an embodiment of the present disclosure. [Figure 2B]FIG. 2B is a schematic top view of the upper lamp module of FIG. 2A according to an embodiment of the present disclosure. [Figure 2C] 2C is a schematic cross-sectional view of the upper lamp module of FIG. 2A taken along section line 2C-2C, according to an embodiment of the present disclosure. [Figure 3A] FIG. 2 is a schematic bottom view of a lower lamp module according to an embodiment of the present disclosure. [Figure 3B] FIG. 3B is a schematic top view of the lower lamp module of FIG. 3A according to an embodiment of the present disclosure. [Figure 3C] FIG. 2C is a schematic cross-sectional view of an upper lamp module taken along section line 2C-2C of FIG. 3A according to an embodiment of the present disclosure. [Figure 4A] FIG. 1 is a schematic cross-sectional perspective view of a chamber body assembly according to an embodiment of the present disclosure. [Figure 4B] FIG. 4B is a schematic cross-sectional view of the chamber body assembly of FIG. 4A through another plane according to an embodiment of the present disclosure. [Figure 4C] FIG. 2 is a schematic cross-sectional view of a base ring according to an embodiment of the present disclosure. [Figure 4D] FIG. 4D is a schematic plan view of the base ring of FIG. 4C in accordance with an embodiment of the present disclosure. [Figure 4E] FIG. 4E is a schematic cross-sectional view of a base ring taken along section line 4E-4E of FIG. 4C according to an embodiment of the present disclosure. [Figure 5A] 1 is a schematic cross-sectional view of an injection ring according to an embodiment of the present disclosure. [Figure 5B] FIG. 5B is a schematic plan view of the injection ring of FIG. 5A in accordance with an embodiment of the present disclosure. [Figure 6A] FIG. 2 is a schematic cross-sectional view of an upper liner according to an embodiment of the present disclosure. [Figure 6B] FIG. 6B is a schematic plan view of the upper liner of FIG. 6A in accordance with an embodiment of the present disclosure. [Figure 7] FIG. 2 is a schematic cross-sectional view of a lower liner according to an embodiment of the present disclosure. [Figure 8A] FIG. 2 is a schematic cross-sectional view of a lower heater according to an embodiment of the present disclosure. [Figure 8B]FIG. 8B is a schematic top view of the lower heater of FIG. 8A according to an embodiment of the present disclosure. [Figure 9] FIG. 2 is a schematic cross-sectional view of a susceptor and rotating assembly according to an embodiment of the present disclosure. [Figure 10A] FIG. 2 is another schematic cross-sectional view of the deposition chamber of FIG. 1 showing a lift arm assembly in accordance with an embodiment of the present disclosure. [Figure 10B] FIG. 10B is a schematic top view of the lift arm assembly of FIG. 10A in accordance with an embodiment of the present disclosure. [Figure 10C] FIG. 10C is a schematic cross-sectional view of the lift arm assembly of FIG. 10A taken along section line 10C-10C according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] For ease of understanding, wherever possible, the same reference numerals have been used to designate identical elements that are common to several figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure generally relate to an apparatus for semiconductor processing. More specifically, the apparatus disclosed herein relates to a processing chamber and its components. The processing chamber is configured as a thermal deposition chamber, such as an epitaxial deposition chamber. The processing chamber disclosed herein allows for improved process gas flow and substrate heating. The processing chamber has less expensive parts compared to conventional chambers, thus reducing the cost of replacing parts of the processing chamber after they wear out or when improved designs are applied to parts of the chamber body. The disclosed processing chamber overcomes conventional challenges including improved process gas flow through the chamber volume and more uniform thermal control, which results in better throughput and improved process yields.

[0012] Also disclosed herein are components of a processing chamber. The components disclosed herein include an injection ring, a base ring, an upper lamp module, a lower lamp module, a susceptor, a rotating assembly, an upper liner, a lower liner, and one or more heating elements. Each of the components of the processing chamber are used together to flow one or more process gases horizontally across the surface of a substrate. The components of the processing chamber are coupled together to form a processing space in which the substrate is processed, for example, by epitaxial deposition.

[0013] 1 is a schematic diagram of a processing chamber 100 according to an embodiment of the present disclosure. Processing chamber 100 is an epitaxial deposition chamber and may be used as part of a cluster tool (not shown). Processing chamber 100 is utilized to grow epitaxial films on a substrate, such as substrate 150. Processing chamber 100 generates a cross-flow of precursors across a top surface of substrate 150 during processing.

[0014] The processing chamber 100 includes an upper lamp module 102, a lower lamp module 104, a chamber body assembly 106, a susceptor assembly 124, a lower window 120, and an upper window 122. The susceptor assembly 124 is disposed between the susceptor assembly 124 and the lower lamp module 104. The lower window 120 is disposed between the susceptor assembly 124 and the lower lamp module 104. The upper window 122 is disposed between the susceptor assembly 124 and the upper lamp module 102.

[0015] The upper lamp module 102 is disposed above the susceptor assembly 124 and is configured to heat a substrate, such as a substrate 150, disposed on the susceptor assembly 124. The upper lamp module 102 includes an upper module body 126 and a plurality of lamp openings 128 disposed through the upper module body 126. A lamp 130 is disposed within each of the plurality of lamp openings 128. Each lamp 130 is coupled to a lamp base 129. Each lamp base 129 supports one of the lamps 130 and electrically connects each lamp 130 to a power source (not shown). Each lamp 129 is fixed in a generally vertical orientation within the opening 128. As used herein, the generally vertical orientation of the lamps 130 is approximately perpendicular to a substrate support surface of the susceptor 124. The vertical orientation of lamps 130 is not necessarily perpendicular to the substrate support surface, but can be at an angle between about 30 degrees and about 150 degrees relative to substrate support surface 906 (FIG. 9), such as between about 45 degrees and about 135 degrees relative to substrate support surface 906, such as between about 70 degrees and about 110 degrees relative to substrate support surface 906.

[0016] Continuing to refer to FIG. 1, the upper lamp module 102 further includes a heated gas passage 136 and a pyrometer passage 138. A heated gas source 132 is fluidly coupled to the heated gas passage 136. The heated gas passage 136 extends from the top to the bottom of the upper module body 126. The heated gas passage 136 is configured to allow heated gas, such as heated air or heated inert gas, to flow from the heated gas source 132 to the top of the upper window 122 to convectively heat the upper window 122. The heated gas is provided to an upper plenum 180 defined between the upper lamp module 102 and the upper window 122. A heated gas exhaust passage 142 is also disposed through the upper module body 126. The heated gas exhaust passage 142 is coupled to a heated exhaust pump 140. The heated exhaust pump 140 removes gas from the upper plenum 180. The heated exhaust pump 140 also functions as an exhaust pump for the process space. The heated gas exhaust passage 142, in some embodiments, may be a groove formed along the edge of the upper module body 126 or may be formed through a separate component in fluid communication with the upper plenum 180.

[0017] A pyrometer passage 138 is disposed through the upper module body 126 to enable a pyrometer 134, such as a scanning pyrometer, to measure the temperature of the substrate 150. The pyrometer 134 is disposed on the upper module body 126 adjacent to the pyrometer passage 138. The pyrometer passage 138 extends from the top surface of the upper module body 126 to the bottom surface adjacent the upper window 122.

[0018] The lower lamp module 104 is disposed below the susceptor assembly 124 and is configured to heat a bottom surface of a substrate 150 disposed on the susceptor assembly 124. The lower lamp module 104 includes a lower module body 182 and a plurality of lamp openings 186 disposed through the lower module body 182. A lamp 188 is disposed within each of the plurality of lamp openings 186. Each lamp 188 is disposed in a generally vertical orientation and is coupled to a lamp base 184. Each lamp base 184 supports one of the lamps 188 and electrically connects each lamp 188 to a power source (not shown). In this specification, the generally vertical orientation of the lamps 188 is described with respect to a substrate support surface 906 ( FIG. 9 ) of the susceptor 124. The generally perpendicular orientation is not necessarily generally perpendicular to the substrate support surface 906, but can be at an angle between about 30 degrees and about 150 degrees relative to the substrate support surface 906, such as an angle between about 45 degrees and about 135 degrees relative to the substrate support surface 906, such as an angle between about 70 degrees and about 110 degrees relative to the substrate support surface 906.

[0019] The lower lamp module 104 further includes a susceptor shaft passage 195 and a pyrometer passage 192. A support shaft 904 (FIG. 9) for the susceptor 124 is disposed through the susceptor shaft passage 195. The susceptor shaft passage 195 is disposed through the center of the lower module body 182. The susceptor shaft passage 195 is configured to allow the support shaft 904 for the susceptor 124 and a portion of the lower window 120 to pass through the lower module body 182.

[0020] 1 , a pyrometer passage 192 is disposed through the lower module body 182 to enable a pyrometer 190, such as a scanning pyrometer, to measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the substrate support. The pyrometer 190 is disposed below the lower module body 182 adjacent to the pyrometer passage 192. The pyrometer passage 192 is disposed from the bottom surface of the lower module body 182 to the top surface of the lower module body 182 adjacent the lower window 120.

[0021] The chamber body assembly 106 includes an injection ring 116 and a base ring 114. The injection ring 116 is disposed on the base ring 114. The injection ring 116 has one or more gas injectors 108 disposed therethrough. The base ring 114 includes a substrate transfer passage 162 disposed therethrough, one or more upper chamber exhaust passages 426 (FIG. 4E), and a lower chamber exhaust passage 164. The substrate transfer passage 162 is disposed opposite the one or more upper chamber exhaust passages 426 and the lower chamber exhaust passage 164. Each of the one or more upper chamber exhaust passages 426 is coupled to an exhaust module 422.

[0022] The upper chamber 111 is the portion of the processing space 110 where the substrate 150 is processed and where process gases are injected. The lower chamber 113 is the portion of the processing space 110 where the substrate 150 is loaded onto the susceptor assembly 124. The upper chamber 111 may also be understood as the space above the susceptor 902 (FIG. 9) of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The lower chamber 113 is understood as the space below the susceptor 902 (FIG. 9) of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The processing position (not shown) is the position where the substrate 150 is located on the same plane as or above the horizontal plane 125. The horizontal plane 125 is the plane where the injection ring 116 and the base ring 114 contact each other.

[0023] The one or more upper chamber exhaust passages 426 and the lower chamber exhaust passages 164 are coupled to one or more exhaust pumps (not shown). The one or more exhaust pumps are configured to remove exhaust gases from the process space 110 via the one or more upper chamber exhaust passages 426 and the lower chamber exhaust passages 164. In some embodiments, each of the upper chamber exhaust passages 426 and the lower chamber exhaust passages 164 are coupled to a single exhaust pump using multiple conduits. In other embodiments, the upper chamber exhaust passages 426 are coupled to a different exhaust pump than the lower chamber exhaust passages 164.

[0024] A substrate transfer passage 162 is formed through the base ring 114 and is configured to allow a substrate to pass therethrough from a transfer chamber of a cluster tool (not shown). A flange 168 is attached to one end of the base ring 114 to allow the processing chamber 100 to be mounted to a cluster tool (not shown). The substrate transfer passage 162 passes through the flange 168.

[0025] An upper cooling ring 118 and a lower cooling ring 112 are disposed on opposite sides of the chamber body assembly 106. The upper cooling ring 118 is disposed above the injection ring 116 and is configured to cool the injection ring 116. The lower cooling ring 112 is disposed below the base ring 114 and is configured to cool the base ring 114. The upper cooling ring 118 has a coolant passage 146 disposed therein. The coolant circulating through the coolant passage 146 may include water or oil in some embodiments. The lower cooling ring 112 has a coolant passage 148 disposed therein. The coolant circulating through the coolant passage 148 is similar to the coolant circulating through the coolant passage 146 of the upper cooling ring 118. In some embodiments, the upper cooling ring 118 and the lower cooling ring 112 help secure the injection ring 116 and the base ring 114 in place. The upper cooling ring 118 may partially support the upper lamp module 102 , and the lower cooling ring 112 may partially support the base ring 114 and the injection ring 116 .

[0026] The use of upper and lower cooling rings 118, 112 reduces the temperature of injection ring 116 and base ring 114 without the need for additional cooling channels disposed therethrough, as are present in conventional rings. This reduces the manufacturing costs of injection ring 116 and base ring 114, which are replaced more frequently than upper and lower cooling rings 118, 112. In some embodiments, injection ring 116 can have additional coolant passages 521 (FIG. 5A) disposed therein.

[0027] The one or more gas injectors 108 of the injection ring 116 are disposed through one or more openings in the injection ring 116. In the embodiments described herein, a plurality of gas injectors 108 are disposed through the injection ring 116. The one or more gas injectors 108 are configured to supply process gas to the processing space 110 via one or more gas outlets 178. One of the one or more gas injectors 108 is illustrated in FIG. 1. The gas injector 108 is illustrated as being disposed such that the one or more gas outlets 178 point downward toward the susceptor 124 and the substrate 150. The downward angle of the gas injector 108 can be greater than about 5 degrees from horizontal, for example greater than about 10 degrees from horizontal. Each of the one or more gas outlets 178 is fluidly coupled to one or more process gas sources, such as a first process gas source 174 or a second process gas source 176. In some embodiments, only the first process gas source 174 is utilized. In embodiments where both a first process gas source 174 and a second process gas source 176 are utilized, there are two gas outlets 178 in each gas injector 108. The two gas outlets 178 are arranged in a stacked configuration to allow mixing of the gases only after they enter the processing space 110. In some embodiments, the first process gas source 174 is a process gas and the second process gas source 176 is a cleaning gas. In other embodiments, both the first process gas source 174 and the second process gas source 176 are process gases.

[0028] The upper window 122 is disposed between the injection ring 116 and the upper lamp module 102. The upper window 122 is an optically transparent window that allows radiant energy generated by the upper lamp module 102 to pass therethrough. In some embodiments, the upper window 122 is formed of a quartz or glass material. The upper window 122 is dome-shaped, and in some embodiments, is described as an upper dome. The outer edge of the upper window 122 forms a peripheral support 172. The peripheral support 172 is thicker than a central portion of the upper window 122. The peripheral support 172 is disposed above the injection ring 116. The peripheral support 172 is connected to a central portion of the upper window 122 and is formed of an optically transparent material of the central portion of the upper window 122.

[0029] The lower window 120 is disposed between the base ring 114 and the lower lamp module 104. The lower window 120 is an optically transparent window that allows radiant energy generated by the lower lamp module 104 to pass therethrough. In some embodiments, the lower window 120 is formed from a quartz or glass material. The lower window 120 is dome-shaped, and in some embodiments, is described as a lower dome. An outer edge of the lower window 120 forms a peripheral support 170. The peripheral support 170 is thicker than a central portion of the lower window 120. The peripheral support 170 is connected to the central portion of the lower window 120 and is formed from the same optically transparent material.

[0030] Various liners and heaters are disposed inside the chamber body assembly 106 within the processing space 110. As shown in FIG. 1, an upper liner 156 and a lower liner 154 are disposed within the chamber body assembly 106. The upper liner 156 is disposed above the lower liner 154 and inside the injection ring 116. The lower liner 154 is disposed inside the base ring 114. The upper liner 156 and the lower liner 154 are configured to be bonded together while present within the processing space. The upper liner 156 and the lower liner 154 are configured to shield the inner surfaces of the injection ring 116 and the base ring 114 from process gases within the processing space. The upper liner 156 and the lower liner 154 also serve to reduce heat loss from the processing space to the injection ring 116 and the base ring 114. The reduced heat loss improves the heating uniformity of the substrate 150, allowing for more uniform deposition on the substrate 150 during processing.

[0031] An upper heater 158 and a lower heater 152 are also disposed within the processing space 110 in the chamber body assembly 106. As shown in FIG. 1, the upper heater 158 is disposed between the upper liner 156 and the injection ring 116, and the lower heater 152 is disposed between the lower liner 154 and the base ring 114. Both the upper heater 158 and the lower heater 152 are disposed inside the chamber body assembly 106 to allow for more uniform heating of the substrate 150 while the substrate 150 is within the processing chamber 100. The upper heater 158 and the lower heater 152 reduce heat loss to the walls of the chamber body assembly 106 and create a more uniform temperature distribution around the surfaces that define the processing space 110. Each of the upper liner 156, the lower liner 154, the upper heater 158, and the lower heater 152 is coupled to a flange 160 disposed within the processing space 110. Flange 160 is a horizontal surface configured to be secured between a portion of injection ring 116 and base ring 114 to allow for the securing of upper liner 156, lower liner 154, upper heater 158, and lower heater 152, respectively. In the embodiments described herein, both upper heater 158 and lower heater 152 can be configured to have a fluid to be heated passed therethrough or can be resistive heaters. Upper heater 158 and lower heater 152 are further shaped to receive openings through injection ring 116 and base ring 114.

[0032] The susceptor assembly 124 is disposed within the processing space 110 and configured to support the substrate 150 during processing. The susceptor assembly 124 includes a planar upper surface for supporting the substrate 150 and a shaft extending through a portion of the lower window 120 and the lower lamp module 104. The susceptor assembly 124 is coupled to a translation assembly 194. The translation assembly 194 includes a rotation assembly 196 and a lift assembly 198. The rotation assembly 196 is configured to rotate the susceptor assembly 124 about a central axis A, and the lift assembly 198 is configured to linearly translate the susceptor assembly 124 within the processing space 110 along the central axis A.

[0033] 2A is a schematic bottom view of an upper lamp assembly 102 according to an embodiment of the present disclosure. The upper module body 126 of the upper lamp module 102 further includes a bottom surface 202, a top surface 214 (FIG. 2B), and a support ridge 204 disposed around the outer edge of the bottom surface 202. The support ridge 204 is configured to support the upper module body 126 by contacting a portion of the upper window 122 (FIG. 1) while providing separation between the remaining portion of the bottom surface 202 and the upper window 122. The support ridge 204 disposed on the outside of the bottom surface 202 distributes the weight of the upper module body 126 around a portion of the peripheral support 172 or chamber body assembly 106 instead of being supported only by the central portion of the upper window 122. This reduces the probability of the upper window 122 breaking and creates the upper plenum 180. The upper plenum 180 allows for heating or cooling of the upper window 122 using a gas source, such as the heated gas source 132. The bottom surface 202 is a curved surface and is shaped similarly to the central portion of the upper window 122. The bottom surface 202 is a concave surface.

[0034] Each of the lamp openings 128 includes an inner wall 206. Each of the inner walls 206 forms a circular or elliptical opening to the lamp opening 128 in the bottom surface 202. Each of the inner walls 206 is configured to reflect radiant energy to enable focusing of the radiant energy from the lamps 130 (FIG. 1) and to enable a controlled energy distribution across the substrate 150. In embodiments described herein, each of the inner walls 206 is curved such that the inner wall 206 forms a portion of an ellipse. In other embodiments, the inner wall 206 is a vertical wall. The inner wall 206 has a reflectivity of greater than about 90%, for example, greater than about 98%, for wavelengths between about 700 nm and about 15,000 nm, for example, between about 700 nm and about 1,000 nm or between about 1,000 nm and about 15,000 nm. A reflective coating may be disposed on the inner wall 206, such as a coating of gold, polished aluminum, or other polished material having high reflectivity at infrared wavelengths. In some embodiments, the upper module body 126 is formed of a reflective material, such as aluminum or steel. In some embodiments, the upper module body 126 is formed of a first material, such as aluminum or steel, and plated with a second material. The second material may be any one of copper, nickel, brass, bronze, silver, gold, aluminum, or alloys thereof. The second material may be polished to increase reflectivity. In some embodiments, the bottom surface 202 is also reflective. The bottom surface 202 may have a reflectivity of greater than about 90%, such as greater than about 98%, for wavelengths between about 700 nm and about 15,000 nm, such as between about 700 nm and about 1000 nm or between about 1000 nm and about 15,000 nm. The bottom surface 202 is made from a similar material as the inner wall 206 or is coated with a similar material as the inner wall 206 .

[0035] The inner walls 206 extend vertically through the upper module body 126 such that the inner walls 206 extend from the bottom surface 202 toward the top surface 214. The generally vertical orientation of the inner walls 206, and therefore the lamp openings 128, allows for a more focused distribution of radiant energy on the substrate. The generally vertical orientation of the lamp openings 128 further reduces radiant energy absorbed by the upper module body 126. The inner walls 206 form a portion of a sphere. Each of the lamp openings 128 includes a central axis about which the inner walls 206 are formed. The central axes through each lamp opening 128 have a common intersection below the bottom surface 202 of the upper lamp module 102 such that each lamp opening 128 faces inwardly toward the central axis A.

[0036] As shown, the pyrometer passage 138 is a slit disposed through the upper module body 126. The pyrometer passage 138 has a first length L1 at the bottom surface 202 and a second length L2 at the top surface 214 (FIG. 2B). The first length L1 is longer than the second length L2. The first length L1 is longer than the second length L2, reducing the opening at the top surface 214 but allowing complete scanning of the top surface of the substrate 150 by a scanning pyrometer such as pyrometer 134. A heating gas passage 136 is disposed through the center of the upper module body 126.

[0037] FIG. 2B is a schematic plan view of the upper lamp module 102 of FIG. 2A. As shown in FIG. 2B, each of the plurality of lamp openings 128 further includes a lamp base support 212 and a bulb opening 210 disposed through each of the lamp base supports 212. The bulb opening 210 connects the lamp base support 212 and the reflective inner wall 206. The lamp base support 212 is a stepped surface disposed around the bulb opening 210. Each lamp base support 212 includes a central bore 211 and an arc-shaped recess 213 surrounding the central bore. The lamp base support 212 is configured to support the lamp base 129. The bulb opening 210 is a circular opening disposed through a bottom surface 215 of the lamp base support 212. The bulb opening 210 is sized to allow the bulb of the lamp 130 to pass therethrough.

[0038] The top surface 214 of the upper lamp module 102 includes a ridge 216. The ridge 216 is slightly raised from an outer portion of the top surface 214. The ridge 216 increases the structural strength of the upper lamp module 102 and reduces deflection of the upper lamp module 102 with the addition of lamps 130 and measurement tools such as pyrometers 134.

[0039] FIG. 2C is a schematic cross-sectional view of the upper lamp module of FIGS. 2A-2B taken along section line 2C-2C. The upper module body 126 is disposed about a central axis A. Each of the reflective inner walls 206 is configured to reflect light from the bulb around a lamp opening 128 and direct the light toward the substrate 150 (FIG. 1) through an opening 217 formed by the inner walls 206. The opening 217 is disposed at an intersection of the inner wall 206 and the bottom surface 202. The walls of the inner wall 206 and the opening 217 of one of the lamp openings 128 surround a lamp opening axis E. The lamp opening axis E is a centerline through the lamp opening 128 and is disposed at an angle φ with respect to the central axis A. The angle φ is less than about 45 degrees, for example less than about 30 degrees, for example less than about 20 degrees. Each of the lamp openings 128 includes a similar lamp opening axis E and is disposed at an angle φ with respect to the central axis A. Not all lamp aperture axes E have the same angle φ, but are angled within the range of angle φ mentioned above.

[0040] Each opening 217 has a first diameter D1 at the bottom surface 202. The first diameter D1 is about 10 mm to about 50 mm, for example, about 20 mm to about 40 mm. The first diameter D1 is configured to control the distribution of radiant energy and the focal position of the radiant energy exiting each of the plurality of lamp openings 128. Each of the bulb openings 210 has a second diameter D2. A lamp opening axis E similarly passes through the center of the bulb opening 210 such that the openings 217 and the bulb openings 210 are concentric around the lamp opening axis E. The second diameter D2 is about 5 mm to about 40 mm, for example, about 10 mm to about 30 mm. The second diameter D2 is large enough to allow one of the lamps 130 to pass therethrough, but small enough to reduce heat loss through the bulb opening 210. In some embodiments, the ratio of the size of the first diameter D1 to the size of the second diameter D2 is about 2:1 to about 5:4, such as about 2:1 to about 4:3, such as about 2:1 to about 3:2. The ratio of the first diameter D1 to the second diameter D2 is configured to produce a desired energy distribution at a substrate disposed below the upper module body 126. In some embodiments, the maximum bulb diameter of each lamp 130 is less than 1 mm smaller than the second diameter D2.

[0041] The lamp openings 128 are arranged in distinct zones. As shown, the lamp openings 128 are arranged in three zones. Each of the three zones may be generally pie-shaped such that each zone forms a sector of a circle. Each sector includes one of the lamp openings 128. Each sector covers about 120 degrees of the upper lamp module 102. Each zone includes about 5-10 lamp openings 128, for example, about 6-8 lamp openings 128 in a sector. Each zone is arranged to heat a different portion of the substrate. Each zone of the lamp openings 128 includes an inner subset of lamp openings 128 and an outer subset of lamp openings 128. Within the inner subset of lamp openings 128, there are a plurality of lamp openings 128. The lamp openings 128 within the inner subset of lamp openings 128 have a small spacing between each other. The small spacing is less than the distance from one of the lamp openings 128 in the inner subset to any lamp opening 128 in a second inner subset of lamp openings 128 within an adjacent zone. The lamp openings 128 in the subset of outer lamp openings 128 are uniformly spaced on the upper lamp module 102. Each lamp opening 128 in the subset of outer lamp openings 128 is an equal distance from an adjacent lamp opening 128 in the second outer subset as the next lamp opening 128 in the same outer subset.

[0042] Other arrangements of the lamp openings 128 are contemplated, including arranging the lamp openings 128 in concentric rings or evenly across the upper lamp module 102 .

[0043] 3A is a schematic top view of the lower lamp module 104. The lower module body 182 of the lower lamp module 104 further includes a top surface 302, a bottom surface 314 (FIG. 3B), and a support ridge 304 disposed around the outer edge of the top surface 302. The support ridge 304 is a ring disposed around the top surface 302 of the lower module body 182 and extending outward from the lower module body 182. The support ridge 304 is configured to contact a portion of the lower window 120 (FIG. 1) to separate the top surface 302 of the lower module body 182 from the lower window 120 while providing separation between the remaining portion of the bottom surface 202 and the lower window 120. The support ridge 304 allows the lower module body 182 to contact only a portion of the peripheral support 170 or the chamber body assembly 106, rather than a central portion of the lower window 120. This reduces the probability of the lower window 120 breaking and creates the lower plenum 181. The upper surface 202 is an angled surface and is shaped similarly to the central portion of the lower window 120. In the embodiment described herein, the upper surface 202 is a concave surface.

[0044] Each of the lamp openings 186 includes an interior wall 306. Each interior wall 306 is similar to the interior walls 206 of the upper lamp module 102. The interior walls 306 of the lamp openings 186 are configured to reflect radiant energy to enable focusing of the radiant energy from the lamps 188 (FIG. 1) and to enable controlled energy distribution across the substrate 150. Each of the interior walls 306 forms a circular or elliptical opening to the lamp opening 186 in the top surface 302.

[0045] The inner wall 306 extends vertically through the lower module body 182 such that the inner wall 306 extends from the top surface 302 toward the bottom surface 314. The vertical orientation of the inner wall 306, and thus the lamp openings 186, allows for a more focused distribution of radiant energy on the substrate. The vertical orientation of the lamp openings 186 further reduces the radiant energy absorbed by the lower module body 182.

[0046] In some embodiments, the lower module body 182 is formed from a first material, such as aluminum or steel, and plated with a second material. The second material can be any one of copper, brass, bronze, silver, gold, aluminum, or alloys thereof. In some embodiments, the lower module body 182 does not include a coating of the second material, but is instead a single material. The lower module body 182 can have a polished top surface 302. In some embodiments, the top surface 302 is also reflective. The top surface 302 can have a reflectivity of greater than about 90%, such as greater than about 98%, for wavelengths between about 700 nm and about 15,000 nm, for example, between about 700 nm and about 1000 nm or between about 1000 nm and about 15,000 nm. The top surface 302 is made of or coated with a material similar to the inner wall 306.

[0047] As shown, pyrometer passage 192 is a slit disposed through lower module body 182. Pyrometer passage 192 has a third length L3 at top surface 302 and a fourth length L4 at bottom surface 314 (FIG. 3B). Third length L3 is longer than fourth length L4. Third length L3 is longer than fourth length L4, reducing the opening at bottom surface 314 but allowing complete scanning of the bottom surface of substrate 150 or the bottom surface of a susceptor with a scanning pyrometer such as pyrometer 190.

[0048] 3A, a susceptor shaft passage 195 is disposed through the center of the lower module body 182. The susceptor shaft passage 195 is disposed between and connects the top surface 302 and the bottom surface 314 of the lower module body 182. A portion of the susceptor shaft passage 195 adjacent the top surface 302 includes a curved surface 208. The curved surface 208 is configured to follow the shape of the lower window 120 as it curves through the susceptor shaft passage 195. The curved surface 208 connects the bottom surface 314 to an inner surface of the susceptor shaft passage 195.

[0049] FIG. 3B is a schematic plan view of the lower lamp module 104 of FIG. 3A according to an embodiment of the present disclosure. As shown in FIG. 3B, each of the plurality of lamp openings 186 further includes a lamp base support 312 and a bulb opening 310 disposed through each of the lamp base supports 312. The bulb opening 310 connects the lamp base support 312 and the inner wall 306. The lamp base support 312 is a stepped surface disposed around the bulb opening 310. Each lamp base support 312 includes a central bore 311 and an arc-shaped recess 313 surrounding the central bore. The lamp base support 312 is configured to support and / or couple to the lamp base 184. The bulb opening 310 is a circular opening disposed through a top surface of the lamp base support 312. The bulb opening 310 is sized to allow a bulb of the lamp 188 to pass therethrough.

[0050] 3C is a schematic cross-sectional view of the lower lamp module 104 of FIG. 3A taken along plane 3C-3C. As shown in FIG. 3C, the lower module body 182 is disposed about a central axis A. In some embodiments, the inner wall 306 and the top surface 302 intersect to form an opening 317. The opening 317 has a first diameter D1. In some embodiments, the opening 317 is an ellipse or an oval. In some embodiments, the first diameter D1 is a diameter of about 1.5 mm. D The first diameter D1 is the major axis length of the openings 317. The first diameter D1 is similar to the first diameter D1 described with reference to the upper modular body 126. Each of the bulb openings 310 has a second diameter D2. The second diameter D2 is similar to the second diameter D2 described with reference to the upper modular body 126. In some embodiments, the maximum bulb diameter of each lamp 188 is less than 1 mm smaller than the second diameter D2.

[0051] Each of the reflective inner walls 306 is configured to reflect light from the bulb around the lamp opening 186 and direct the light toward the substrate 150 ( FIG. 1 ) through an aperture 317 formed by the inner wall 306. The aperture 317 is located where the inner wall 306 intersects with the top surface 302. The walls of the inner wall 306 and the aperture 317 of one of the lamp openings 186 encircle a lamp opening axis F. The lamp opening axis F is a centerline through the lamp opening 186. The lamp opening axis F in turn passes through the center of the bulb opening 310 such that the aperture 317 and the bulb opening 310 are concentric about the lamp opening axis F.

[0052] The plurality of lamp openings 186 are arranged in zones. As shown, the plurality of lamp openings 186 are arranged in two concentric zones. Each zone includes a ring of lamp openings 186 arranged on a common diameter around the susceptor shaft passage 195. Each ring of lamp openings 186 includes at least three lamp openings 186. In the embodiment described herein, the inner zone includes a ring having 8-16 lamp openings 186, e.g., 10-14 lamp openings 186. The outer zone includes a ring having 12-20 lamp openings 186, e.g., 14-18 lamp openings. As used herein, the outer zone includes more lamp openings 186 than the inner zone.

[0053] 4A is a schematic cross-sectional perspective view of a chamber body assembly 106 according to an embodiment of the present disclosure. The chamber body 106 includes an injection ring 116 disposed on and coupled to a base ring 114. The injection ring 116 includes one or more gas injectors 108. The injection ring 116 includes an inner surface 504, and the base ring 114 includes an inner surface 404. The inner surfaces 404 of the base ring 114 and the inner surface 504 of the injection ring 116 are aligned with one another such that the inner surfaces 404, 504 have the same diameter for at least a portion of the circumference of the base ring 114 and the injection ring 116. The inner surfaces 404 of the base ring 114 and the inner surface 504 of the injection ring 116 form a central opening 401. The central opening 401 includes both the opening 410 of the base ring 114 and the opening 510 of the injection ring 116. The top surface 412 of the base ring is in contact with the bottom surface 524 of the injection ring 116 .

[0054] One or more gas injectors 108 are disposed on one side of the chamber body assembly 106, and one or more upper chamber exhaust passage openings 424 are disposed on an opposite side of the chamber body assembly 106. Each of the one or more upper chamber exhaust passage openings 424 is aligned with a recess 530 formed in the inner surface of the injection ring 116. The alignment of each of the one or more recesses 530 with the upper chamber exhaust passage openings 424 allows gas injected by the one or more gas injectors 108 to flow across the processing space 110 (FIG. 1) over the substrate 150 and then removed from the processing space 110 via the upper chamber exhaust passage openings 424. The recesses 530 assist in collecting and directing the exhaust gases from an area level with the injection ring 116 downward toward the upper chamber exhaust passage openings 424. Once the exhaust gases enter the upper chamber exhaust passage openings 424 , they flow through one or more upper chamber exhaust passages 426 and exit through exhaust outlets 430 .

[0055] The combination of the recess 530 and the upper chamber exhaust passage opening 424 reduces the complexity of manufacturing the base ring 114 and / or the injection ring 116. The combination of the recess 530 and the upper chamber exhaust passage opening 424 further allows process gases to flow horizontally across the processing space 110 and remain within the upper chamber 111, rather than bypassing downward into the lower chamber 113 where they may be a source of contamination.

[0056] FIG. 4B is a schematic cross-sectional view of the chamber body assembly 106 of FIG. 4A through another plane according to an embodiment of the present disclosure. The cross-section shown in FIG. 4B illustrates the lower chamber exhaust passage 164 and the relationship between the orientation of the lower chamber exhaust passage 164 and at least one of the upper chamber exhaust passage opening 424, the recess 530, and the upper chamber exhaust passage 426. The recess 530, the upper chamber exhaust passage opening 424, and the upper chamber exhaust passage 426 are disposed at an angle with respect to the lower chamber exhaust passage 164, as described with reference to FIG. 4D, FIG. 4E, and FIG. 5B. The recess 530 and the upper chamber exhaust passage opening 424 are additionally disposed above the lower chamber exhaust passage 164. The lower chamber exhaust passage 164 is configured to remove exhaust gas from the lower chamber 113, and the upper chamber exhaust passage opening 424 is configured to remove exhaust gas from the upper chamber 111.

[0057] 4C is a schematic cross-sectional view of the base ring 114. The base ring 114 includes a base ring body 402 having an opening 410 disposed therethrough. The opening 410 defines at least a portion of the overall processing volume 110 of the processing chamber 100. The opening 410 is sized to accommodate a substrate and susceptor assembly 124 therein. The opening 410 is defined by an inner wall 404 of the base ring 114. The opening 410 extends from a top surface 412 of the base ring 114 to a bottom surface 414 of the base ring 114.

[0058] The base ring body 402 is the body of the base ring 114 and is formed from a metallic material, such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, the base ring body 402 can be a silicon carbide material or a doped silicon carbide material.

[0059] As described above, the substrate transfer passage 162 is disposed opposite the one or more upper chamber exhaust passages 424 and the lower chamber exhaust passages 164. The substrate transfer passage 162 is disposed through a first side 406 of the base ring 114, and the one or more upper chamber exhaust passage openings 424 and the lower chamber exhaust passages 164 are formed through a second side 408 of the base ring 114. The first side 406 of the base ring 114 is disposed on one side of a plane C (FIG. 4E) disposed through the base ring 114, and the second side 408 of the base ring 114 is disposed on the opposite side of the plane C from the first side 406. The plane C passes through the central axis A and is perpendicular to the plane B. The plane C separates the substrate transfer passage 162 from the lower chamber exhaust passages 164 and the upper chamber exhaust passage openings 424. In the embodiment described herein, two upper chamber exhaust passage openings 424 are formed through the top surface 412 of the base ring 114 (FIG. 4D). The two upper chamber exhaust passage openings 424 face the substrate transfer passage 162, but are offset from directly opposite the substrate transfer passage 162. The two upper chamber exhaust passage openings 424 are offset to prevent gas from gathering inward as it flows from the gas injector 108 (FIG. 1) across the processing space 110. Instead, the gas flow remains more evenly distributed across the processing space, allowing for more uniform deposition on the substrate 150. The two upper chamber exhaust passage openings 424 are located inward from the seal groove 416.

[0060] The substrate transfer passage 162 has a height H1 of about 7 mm to about 30 mm, e.g., about 10 mm to about 20 mm, to allow for placement of the substrate 150 and transfer arm (not shown) therethrough. The substrate transfer passage 162 further has a width W1 (FIG. 4E) of about 305 mm to about 350 mm, e.g., about 305 mm to about 315 mm. The width W1 allows for the substrate 150 to be placed therethrough and onto the susceptor assembly 124.

[0061] 1, the lower chamber exhaust passage 164 is disposed opposite the substrate transfer passage 162 to fluidly connect the lower chamber exhaust passage 164 to an exhaust pump (not shown). The exhaust pump may also be coupled to and in fluid communication with the two upper chamber exhaust passage openings 424. Herein, the lower chamber exhaust passage 164 is a cylindrical passage or an elliptical passage. The lower chamber exhaust passage 164 has a height H2 of about 0 mm to about 75 mm, for example about 25 mm to about 50 mm. The height H2 of the lower chamber exhaust passage 164 is configured to allow adequate lower chamber gas flow therethrough along with a possible lift arm assembly as shown in FIG. 10A.

[0062] 4C, a seal groove 416 is disposed in the upper surface 412 of the base ring body 402. The seal groove 416 surrounds the inner wall 404 and is configured to receive a seal ring, such as an O-ring or other sealing gasket. The seal ring disposed in the seal groove 416 can be a polymer or plastic having a hardness of greater than 50 durometer on the Shore A scale, such as greater than 60 durometer, such as greater than about 65 durometer. The seal groove 416 is sized to receive the seal ring that forms a seal between the base ring 114 and the injection ring 116, as shown in FIG. 1. The seal groove 416 is disposed radially outward from the upper chamber exhaust passage opening 424 to prevent exhaust gases flowing through the upper chamber exhaust passage opening 424 from escaping from the processing chamber 100.

[0063] Top surface 412 optionally includes support step 440. Support step 440 is a recess formed between top surface 412 and inner wall 404. Support step 440 is configured to support flange 160 ( FIG. 1 ). Flange 160 is configured to be at least partially disposed within support step 440 of base ring 114 and injection ring 116 to hold flange 160 in place.

[0064] The bottom surface 414 of the base ring body 402 includes a first seal groove 418 and a second seal groove 420. The first seal groove 418 and the second seal groove 420 are concentric and surround the inner wall 404 along the bottom surface 414. The first seal groove 418 is disposed further outward from the axis A than the second seal groove 420 such that the first seal groove 418 surrounds the second seal groove 420. Each of the first seal groove 418 and the second seal groove 420 is configured to receive a seal ring, such as an O-ring or other sealing gasket. The seal rings disposed in the first seal groove 418 and the second seal groove 420 can be a polymer or plastic having a hardness greater than 50 durometer, such as greater than 60 durometer, such as greater than about 65 durometer on the Shore A scale. The first seal groove 418 and the second seal groove 420 are sized to accommodate seal rings and enable formation of a seal between the base ring 114 and the peripheral support 170 of the lower window 120 as shown in FIG.

[0065] FIG. 4D is a schematic plan view of the base ring 114 of FIG. 4C. As shown in FIG. 4D, the upper surface 412 has one or more upper chamber exhaust passage openings 424 disposed therethrough. The one or more upper chamber exhaust passage openings 424 are disposed between the inner wall 404 and the seal groove 416. The one or more upper chamber exhaust passage openings 424 are in fluid communication with a portion of the upper liner 156 and the injection ring 116 for removing process gases from an upper portion of the processing space 110. The one or more upper chamber exhaust passage openings 424 are each in fluid communication with an exhaust module 422 via an upper chamber exhaust passage 426. The upper chamber exhaust passage 426 is a passage disposed through the base ring body 402 (FIG. 4E). The upper chamber exhaust passage 426 fluidly couples one of the exhaust modules 422 to one of the upper chamber exhaust passage openings 424. As shown in FIG. 4D, two exhaust modules 422 are attached to the second side 408 of the base ring body 402. Each of the two exhaust modules 422 is disposed on either side of the lower chamber exhaust passage 164, such that each of the exhaust modules 422 is disposed on either side of and mirrored across the plane B. The plane B passes through the central axis A, the center of the substrate transfer passage 162, and the lower chamber exhaust passage 164 (FIG. 4E). The plane B is a vertically oriented plane that divides the base ring 114 in half such that the base ring 114 is mirrored across the plane B. The same plane B is utilized with reference to the implant ring, as shown in FIG. 5B.

[0066] Each of the one or more upper chamber exhaust passage openings 424 has a width W2 of about 10 mm to about 220 mm, for example, about 20 mm to about 150 mm. The width W2 of each of the upper chamber exhaust passage openings 424 allows for removal of exhaust gas from within the processing space 110 while reducing turbulence in the gas flow within the processing space 110.

[0067] Each of the upper chamber exhaust passage openings 424 is disposed between a first exhaust angle α and a second exhaust angle β with respect to plane B. The first exhaust angle α is between about 5 degrees and about 45 degrees with respect to plane B, such as between about 10 degrees and about 30 degrees with respect to plane B, such as between about 10 degrees and about 25 degrees with respect to plane B. The first exhaust angle α is large enough to prevent the upper chamber exhaust passage 426 from intersecting the lower chamber exhaust passage 164.

[0068] The second exhaust angle β is between about 30 degrees and about 70 degrees, for example, between about 35 degrees and about 65 degrees, for example, between about 45 degrees and about 60 degrees. The second exhaust angle β is large enough to capture gas directed across the opening 410 by the one or more gas injectors 108 without causing the gas path to bend substantially inward toward the plane B. The difference between the first exhaust angle α and the second exhaust angle β is between about 25 degrees and about 60 degrees, for example, between about 30 degrees and about 50 degrees. The difference between the first exhaust angle α and the second exhaust angle β allows the upper chamber exhaust passage opening 424 to be positioned around a desired circumference of the opening 410, and the difference is the amount of the base ring 114 around which the upper chamber exhaust passage opening 424 extends.

[0069] FIG. 4E is a schematic cross-sectional plan view of the base ring 114 of FIG. 4C taken along section line 4E-4E. As shown in FIG. 4E, each of the upper chamber exhaust passages 426 is fluidly coupled to an exhaust module passage 428 disposed through each of the exhaust modules 422. The exhaust module passage 428 is in fluid communication with the upper chamber exhaust passage opening 424 via the upper chamber exhaust passage 426. The exhaust module passage 428 narrows as the exhaust module passage 428 extends further from the base ring body 402, until the exhaust module passage 428 joins with an exhaust outlet 430. The exhaust outlet 430 is an opening formed through a wall of the exhaust module passage 428 and is configured to be coupled to an exhaust conduit (not shown) for removing exhaust gases from the processing chamber 100. Similar to the upper chamber exhaust passage opening 424, the upper chamber exhaust passage 426 is disposed between a first exhaust angle α and a second exhaust angle β with respect to the plane B.

[0070] 5A is a schematic cross-sectional view of an injection ring 116 according to an embodiment of the present disclosure. The injection ring 116 is configured to seat on the base ring 114 and supply process gas to the processing space 110. The injection ring 116 is a separate component from the base ring 114. The injection ring 116 is configured to inject gas across the surface of the substrate such that the main flow of gas through the processing space 110 is horizontal. The separable injection ring 116 allows for easy replacement and maintenance of the injection ring 116 without replacing or removing the entire chamber body assembly 106. This reduces replacement costs and allows new gas injection improvements to be more easily implemented in the processing chamber 100 with minimal impact on other chamber components.

[0071] The injection ring 116 includes an inner surface 504 and an outer surface 506. The inner surface 504 forms a ring around an opening 510 disposed in the injection ring 116. The opening 510 defines at least a portion of the processing space 110 of the processing chamber 100. The injection ring 116 has one or more gas injectors 108 disposed therethrough. The one or more gas injectors 108 extend from an injector support surface 514 through the injection ring body 502 to the inner surface 504. The one or more gas injectors 108 described herein are disposed through one or more injector passages 508. Each injector passage 508 is sized to accommodate one of the one or more gas injectors 108, e.g., one of the gas injectors 108. The injector passages 508 extend from the injector support surface 514 to the inner surface 504. As the injector passages 508 move from the injector support surface 514 to the inner surface 504, the injector passages 508 extend downwardly. Extending downwardly is defined as the injector passages 508 being positioned away from a top surface 518 of the inject ring 116 and closer to a bottom surface 524 of the inject ring 116 as the injector passages 508 move radially inward toward the inner surface 504.

[0072] Inner surface 504 includes groove 536 disposed about a majority of the circumference of inner surface 504, e.g., greater than 50% of the circumference of inner surface 504, e.g., greater than 60% of the circumference of inner surface 504, e.g., greater than 70% of the circumference of inner surface 504. Groove 536 is configured to accommodate a heating element, such as upper heating element 158. Groove 536 is shown in FIG. 5A as being formed as part of inner surface 504 and bottom surface 524 of inject ring 116. Two recesses 530 are also disposed in inner surface 504. The two recesses 530 are disposed opposite injector passage 508. Recess 530 is disposed within groove 536 and extends deeper into injection ring body 502 than groove 536, such that recess 530 extends further from axis A than groove 536.

[0073] The injector support surface 514, along with an outer stepped surface 516, is part of the outer surface 506 of the inject ring body 502. The injector support surface 514 is configured to hold one or more gas injectors 108 in place by providing a surface for securing a portion of the one or more gas injectors 108. One or more gas outlets 178 are disposed through the inner surface 504 and are angled downwardly toward a substrate 150 disposed within the process space 110 (FIG. 1).

[0074] A bottom surface 524 of the injection ring 116 is configured to contact the top surface 412 of the base ring 114. The bottom surface 524 is a planar surface extending between the outer surface 506 and the inner surface 504. An outer stepped surface 516 extends from an outermost portion of the outer surface 506 to a lower distal end of the injector support surface 514. The injector support surface 506 extends from the outer stepped surface 516 away from the bottom surface 524. The injector support surface 514 is disposed at an angle relative to the bottom surface 524. The angle of the injector support surface 514 depends, at least in part, on the desired downward angle of the injector passages 508 and the one or more gas injectors 108. In embodiments described herein, the angle of injector support surface 514 relative to bottom surface 524 is greater than about 45 degrees, such as between about 45 degrees and about 85 degrees, such as between about 60 degrees and about 80 degrees, such as between about 70 degrees and about 80 degrees. Injector support surface 514 extends radially inward from outer step surface 516 such that a distal end of injector support surface 514 furthest from outer step surface 516 is closer to inner surface 504.

[0075] An upper surface 518 of the injection ring 116 extends radially inward from an upper distal end of the injector support surface 514. The upper surface 518 is a horizontal surface such that the upper surface 518 extends parallel to the bottom surface 524. A distal end of the upper surface 518 opposite the injector support surface 514 is connected to a window support groove 512. The window support groove 512 is a channel disposed along the upper surface of the injection ring 116. The window support groove 512 is configured to receive the peripheral support portion 172 of the upper window 122 therein. The window support groove 512 includes a first window seal groove 520 and a second window seal groove 522. Each of the first seal window groove 520 and the second seal window groove 522 is configured to receive a seal ring, such as an O-ring or other sealing gasket. The seal rings disposed in the first window seal groove 520 and the second window seal groove 522 may be a polymer or plastic having a hardness greater than 50 durometer, such as greater than 60 durometer, such as greater than about 65 durometer on the Shore A scale. The first window seal groove 520 and the second window seal groove 522 are sized to accommodate the seal rings and allow for the formation of a seal between the injection ring 116 and the upper window 122, as shown in FIG.

[0076] An inner portion of the window support groove 512 is defined by an angled protrusion 511. The angled protrusion 511 is disposed inwardly from the first window seal groove 520 and the second window seal groove 522. The angled protrusion 511 extends upward from the window support groove 512 away from the bottom surface 508. The angled protrusion 511 defines a portion of the window support groove 512 disposed at the innermost position of the angled protrusion 511 and a portion of the inner surface 504 disposed at the outermost position of the angled protrusion 511. The angled protrusion 511 extends radially inward while extending upward from the window support groove 512. The angled protrusion 511 shields a portion of the upper window 122, such as the peripheral support 172, from the process volume 110 (FIG. 1). Shielding the peripheral support 172 from the process volume 110 reduces the heat load on the peripheral support 172 and the seals in the first and second window seal grooves 520 and 522. Additionally, the angled protrusions 511 protect the seal ring disposed in the support groove 512 from direct exposure to radiant energy or process gases, thus improving the lift and reliability of the seal ring.

[0077] A coolant passage 521 is optionally disposed through injection ring body 502. Coolant passage 521 is configured to receive a cooling fluid, such as water or oil. Coolant passage 521 is a partial ring disposed through injection ring body 502 and aids in temperature control of both injection ring 116 and base ring 114.

[0078] FIG. 5B is a schematic plan view of the injection ring 116 of FIG. 5A having multiple gas injectors 108. Five gas injectors 108 are shown in FIG. 5B. Other quantities of gas injectors 108 are also contemplated, such as three or more gas injectors 108, four or more gas injectors 108, five or more gas injectors 108, or six or more gas injectors 108. The number of gas injectors 108 determines the number of zones for injecting process gas into the processing space 110 (FIG. 1). The gas injectors 108 are centered about a plane B, which is the same plane as the plane B that passes through the base ring 114. The plane B is disposed through the central axis A and is perpendicular to the plane D. A plurality of individual process gas passages (not shown) may be disposed within each gas injector 108. In an embodiment in which five gas injectors 108 are utilized, the central gas injector 532a forms an inner gas injection zone, the two outermost gas injectors 532c form an outer gas injection zone, and the two intermediate gas injectors 532b between the central gas injector 532a and the outermost gas injector 532c form an intermediate gas injection zone. A plane B is disposed through the central gas injector 532a. The two intermediate gas injectors 532b are mirrored across the plane B. Similarly, the two outermost gas injectors 532c are mirrored across the plane B. A gas injector 108 is disposed through each injector passage 508. The number of injector passages 508 is equal to the number of injectors 108.

[0079] Each injector passage 508 has an injector passage width W3. The injector passage width W3 of each injector passage 508 is shown as being the same. In alternative embodiments, the injector passage width W3 varies as the injector passage 508 extends outward from the central gas injector 532a to the outermost gas injector 532c. In some embodiments, the injector passage width W3 of the injector passage 508 through which the outermost gas injector 532c extends is greater than the injector passage width W3 of the injector passage 508 through which the middle gas injector 532b extends. The injector passage 508 through which the middle gas injector 532b extends has a greater injector passage width W3 than the injector passage width W3 of the injector passage 508 through which the central gas injector 532a extends.

[0080] Alternatively, the injector passage width W3 decreases as the injector passage 508 extends outward from the injector passage 508 in which the central gas injector 532a is located. In this embodiment, the injector passage width W3 of the injector passage 508 through which the outermost gas injector 532c extends is smaller than the injector passage width W3 of the injector passage 508 through which the middle gas injector 532b extends. The injector passage width W3 of the injector passage 508 through which the middle gas injector 532b extends is smaller than the injector passage width W3 of the injector passage 508 through which the central gas injector 532a extends.

[0081] Each of the injector passages 508 is disposed at an injector angle γ with respect to the plane B. The injector angle γ is obtained with respect to the plane B, but on the opposite side of the plane D, with respect to the first exhaust angle α and the second exhaust angle β. The injector angle γ is less than about 70 degrees from the plane B, such as less than about 65 degrees from the plane B, such as less than about 60 degrees from the plane B. The injector angle γ is configured to be within 10 degrees from the second exhaust angle β, such that the difference between the injector angle γ and the second exhaust angle β is between about -10 degrees and about 10 degrees, such as between about -5 degrees and about 5 degrees, such as about 0 degrees. The injector angle γ and the second exhaust angle β are similar in that they reduce deflection of the gas injected by the gas injector 108 into the process space 110 while the gas is being exhausted. The deflection of the gas may cause non-uniformity during film deposition.

[0082] The injection ring 116 includes a recess 530 in the inner surface 504 facing the injector passage 508. The recess 530 corresponds to one or more upper chamber exhaust passage openings 424 (FIG. 4D). The recess 530 is disposed above the one or more upper chamber exhaust passage openings 424, such that the recess 530 serves as a first portion of one or more upper chamber exhaust passages 426 of the base ring 114 (FIG. 4A). In the embodiment described herein, there are two recesses 530 corresponding to the two upper chamber exhaust passages 426. The two recesses 530 are disposed on the opposite side of the opening 510 from the injector passage 508. The two recesses 530 are disposed on one side of a plane D through the injection ring 116, and the injector passage 508 is disposed on the opposite side of the plane D. The two recesses 530 are offset from the center of the inject ring 116 across from the injector passage 508 in which the central gas injector 532a is located. Neither recess 530 is located through plane B. The recesses 530 are mirrored across plane B. As discussed above, the offsetting of the two recesses 530 prevents gas from collecting inward as it flows from the gas injectors 108 (FIG. 1) across the process space 110 to the upper chamber exhaust passage 426.

[0083] Herein, the recesses 530 are sized and shaped similarly to one or more of the upper chamber exhaust passage openings 424. Each of the recesses 530 has a width W4 of about 0 mm to about 220 mm, for example about 10 mm to about 150 mm. The width W4 corresponds to the width W2 (FIG. 4D) of the upper chamber exhaust passage openings 424. The width W4 is configured to reduce turbulence of the gas flow in the processing space 110 to enable a predominantly laminar gas flow and uniform deposition on the substrate 150. Similar to the upper chamber exhaust passage openings 424, the recesses 530 are disposed between a first exhaust angle α and a second exhaust angle β with respect to the plane B.

[0084] Injection ring body 502 forms injection ring 116 and is formed from a metallic material, such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, injection ring body 502 may be made from a silicon carbide material or a doped silicon carbide material.

[0085] 6A is a schematic cross-sectional view of an upper liner 156 used in the processing chamber 100 of FIG. 1. The upper liner 156 is configured to be disposed inside the opening 510 of the injection ring 116 (FIG. 5A). The upper liner 156 is ring-shaped. The upper liner 156 is configured to separate the inner surface 504 of the injection ring 116 from the processing space 110. The upper liner 156 serves to shield the inner surface 504 of the injection ring 116 from the process gases in the processing space 110, Additionally, it protects the process volume 110 from particles or other contaminants emitted by the injection ring 116 and the upper heater 158 .

[0086] The upper liner 156 has an exterior surface 602 and an interior surface 604. The interior surface 604 defines an opening 610 disposed therethrough. The opening 610 is configured to allow the substrate 150 to be disposed therein during processing. The opening 610 defines at least a portion of the processing space 110. While disposed within the processing chamber 100, the interior surface 604 of the upper liner 156 is centered about an axis A.

[0087] One or more liner injection openings 614 are disposed through the upper liner 156. The one or more liner injection openings 614 are disposed from the outer surface 602 to the inner surface 604. The one or more liner injection openings 614 are configured to align with the injector passages 508 of the injection ring 116 (FIG. 5B) along one side of the upper liner 156. The liner injection openings 614 are disposed on a first side of a plane E. The plane E is orthogonal to the plane B and passes through the central axis A. The plane E is aligned with the planes C and D when each of the injection ring 116, the base ring 114, and the upper liner 156 are disposed in the processing chamber 100. In the embodiment described herein, there are five liner injection openings 614. Each of the liner injection openings 614 is configured to fit around a portion of the gas injector 108 that protrudes outward from the inner surface of the injection ring 116. Other quantities of liner inject openings 614 are also contemplated, such as three or more liner inject openings 614, four or more liner inject openings 614, five or more liner inject openings 614, or six or more liner inject openings 614. The number of liner inject openings 614 determines the number of zones through which process gas is injected into the processing space 110 (FIG. 1). The number of liner inject openings 614 is the same as the number of injector passages 508. Similar to the injector passages 508, the liner inject openings 614 are mirrored across plane B. The liner inject openings 614 fit closely around one end of each gas injector 108. The close fit around the gas injectors 108 reduces leakage of process gas from the processing space 110 into the surrounding area of ​​the exterior surface 602.

[0088] Opposite the liner inlet opening 614 are one or more liner exhaust openings 616. The one or more liner exhaust openings 616 are on the opposite side of plane E from the liner inlet opening 614. The one or more liner exhaust openings 616 are disposed from the exterior surface 602 to the interior surface 604. The one or more liner exhaust openings 616 are configured to align with the recesses 530 of the injection ring 116. The one or more liner exhaust openings 616 are elongated openings and extend around a portion of the circumference of the upper liner 156. The one or more liner exhaust openings 616 include two liner exhaust openings 616 as shown in FIG. 6B, so that there are two liner exhaust openings 616. Similar to the recesses 530, each of the two liner exhaust openings 616 is disposed on either side of the plane B from the other.

[0089] Both the one or more liner inlet openings 614 and the one or more liner exhaust openings 616 are disposed on a central liner ring 615. While the upper liner 156 is disposed within the processing chamber 100, at least the central liner ring 615 is disposed about an axis A. The central liner ring 615 is disposed between the liner support ring 606 and the upper outwardly extending surface 608.

[0090] The liner support ring 606 forms a bottom surface 620 of the upper liner 156. The liner support ring 606 is a ring attached to the lower distal end of the central liner ring 615. The liner support ring 606 is a horizontally oriented ring and the bottom surface 620 is a horizontally oriented surface. The width of the liner support ring 606 varies around the circumference of the liner support ring 606. The liner support ring 606 extends radially inward from the inner surface 604 of the central liner ring 615 around the entire circumference of the liner support ring 606. The liner support ring 606 extends along the side of the upper liner 156 near the liner exhaust opening 616 to include a downward outward extension portion 618. The downward outward extension portion 618 extends outward from the portion of the outer surface 602 corresponding to the central liner ring 615.

[0091] The downward outward extension 618 serves to assist in supporting the upper liner 156 and assists in aligning the upper liner 156 with the lower liner 154. Although the downward outward extension 618 extends only around a portion of the liner support ring 606, the downward outward extension 618 allows the upper liner 156 to fit within a groove that supports the upper liner 156. The downward outward extension 618 does not extend around the portion of the liner support ring 606 that is located directly below any of the liner injection openings 614. By not extending around the liner support ring 606 that correspond to the liner injection openings 614, the upper liner 156 can be more easily positioned over and fit around each of the one or more gas injectors 108.

[0092] At the portion of the circumference where the downward outward extension portion 618 is not present, the upward outward extension surface 608 extends radially outward from the upper distal end of the central liner ring 615 to a location proximate the inner surface 504 of the injection ring 116. In the embodiment described herein, the upward outward extension surface 608 extends radially outward from the central liner ring 615, similar to the downward outward extension portion 618. The upward outward extension portion 608 may also serve to support the upper liner 156. The upward outward extension portion 608 is disposed above the liner injection opening 614. The downward outward extension portion 618 and the upward extension portion 608 are connected by a connecting surface 622 (FIG. 6B). The connecting surface 622 is a surface extending outwardly from the central liner ring 615 that joins the upper outwardly extending portion 608 and the lower outwardly extending portion 618 to form a continuous outwardly extending portion. The continuous outwardly extending portion extends around the entire circumference of the upper liner 156. The connecting surface 622 extends a similar outward radial distance from the central liner ring 615 as both the lower outwardly extending portion 618 and the upper outwardly extending surface 608. In the embodiments herein, the connecting surface 622 is a vertical surface, although it is contemplated that the connecting surface 622 may be disposed at an angle relative to the horizontal other than 90 degrees.

[0093] A liner flange 612 is disposed on the central liner ring 615. The liner flange 615 is angled relative to the central liner ring 615. The liner flange 612 is disposed at an upper distal end of the central liner ring 615 and extends radially inward from the inner surface 604 of the central liner ring 615. The liner flange 612 extends upward away from the bottom surface 620. The liner flange 612 is disposed at an angle θ relative to a plane passing through the inner vertical surface 604 and / or the outer vertical surface 602 of the central liner ring 615. The angle θ is about 15 degrees to about 75 degrees, for example about 30 degrees to about 60 degrees. The liner flange 612 is adapted to accommodate the angled protrusion 511 of the injection ring 116. The liner flange 612 separates the angled protrusion 511 from the processing region 110.

[0094] 6B is a schematic plan view of the upper liner 156 of FIG. 6A. As shown, the upper liner 156 includes five liner inlet openings 614. Other quantities of liner inlet openings 614 are also contemplated, such as three or more liner inlet openings 614, four or more liner inlet openings 614, five or more liner inlet openings 614, or six or more liner inlet openings 614. The liner inlet openings 614 are arranged in a manner similar to the injector passages 508 of FIGS. 5A-5B. Two liner exhaust openings 616 are positioned opposite the liner inlet openings 614 and are offset from the direct center of the liner inlet openings 614. Each of the liner exhaust openings 616 is configured to align with the recess 530 such that the liner exhaust openings 616 are located near a similar portion of the circumference of the injection ring 116 as the recess 530. Similar to recess 530, liner exhaust opening 616 is disposed between a first exhaust angle α and a second exhaust angle β relative to plane B. Liner injection opening 614 is disposed at an injector angle γ relative to plane B in a manner similar to injector passage 508.

[0095] Each of the liner inlet openings 614 has a width W5 of about 10 mm to about 100 mm, such as about 50 mm to about 80 mm. The width W5 is selected to allow a portion of the gas injector 108 to be located within the liner inlet opening 614. Each of the liner exhaust openings 616 has a width W6 of about 0 mm to about 220 mm, such as about 25 mm to about 100 mm. The width W6 and offset of the liner exhaust openings 616 are configured to reduce gas flow turbulence within the process space 110. Reducing the gas flow turbulence promotes a predominantly laminar gas flow within the process space 110, which contributes to uniform deposition on the substrate 150.

[0096] 7 is a schematic cross-sectional view of the lower liner 154 according to an embodiment of the present disclosure. The lower liner 154 is configured to be disposed inside the opening 410 of the base ring 114 (FIG. 5D). The lower liner 154 is ring-shaped and has a lower liner body 702. The lower liner 154 is configured to separate the inner surface 404 of the base ring 114 from the processing space 110. The upper liner 156 protects the inner surface 404 of the base ring 114 from process gases in the processing space 110 and further protects the processing space 110 from particles or other contaminants emitted by the base ring 114 and the lower heater 152.

[0097] The lower liner 154 has an outer surface 706 and an inner surface 704. The inner surface 704 defines an opening 716 disposed therethrough. The opening 716 is configured to allow a substrate to be placed therein during processing. The opening 716 defines at least a portion of the processing space 110. While disposed within the processing chamber 100, the inner surface 704 of the lower liner 154 is centered about an axis A.

[0098] The lower liner 154 includes a support flange 708 and a suspended liner portion 710. The suspended liner portion 710 is coupled to the support flange 708 at an upper distal end. The suspended liner portion 710 forms a vertical curtain to protect the inner wall 404 of the base ring 114 and the lower heater 152 from process gases in the processing space 110. The suspended liner portion 710 is configured to extend downwardly parallel to the inner wall 404 of the base ring 114 and radially inward from the lower heater 152. The support flange 708 extends radially outward from the suspended liner portion 710, e.g., radially outward away from the outer surface 706.

[0099] The lower liner 154 further includes a liner substrate opening 712. The liner substrate opening 712 corresponds to the substrate transfer passage 162 and is similar in size and shape to the substrate transfer passage 162. The liner substrate opening 712 is aligned with the substrate transfer passage 162 such that a substrate passing through the substrate transfer passage 162 also passes through the liner substrate opening 712. The liner substrate opening 712 extends from the outer surface 706 to the inner surface 704 and through the suspended liner portion 710. The liner substrate opening 712 is similar in size and shape to the substrate transfer passage 162.

[0100] A lower exhaust liner opening 714 is disposed opposite the liner substrate opening 712. The lower exhaust liner opening 714 corresponds to the lower chamber exhaust passage 164 (FIG. 1). The lower exhaust liner opening 714 is a circular or elliptical opening formed through the suspended liner portion 710 from the outer surface 706 to the inner surface 704. The lower exhaust liner opening 714 is similar in size and shape to the lower chamber exhaust passage 164.

[0101] 8A is a schematic cross-sectional view of the lower heater 152 according to an embodiment of the present disclosure. The lower heater 152 is coupled to a flange 160 and includes a resistive heating element 802. Other types of heaters are contemplated. The lower heater 152 reduces heat loss to the walls of the processing chamber 100. In particular, the lower heater 152 is configured to compensate for heat loss from the processing space 110 to the inner wall 404 of the base ring 114 (FIG. 4C). By compensating for heat lost at the inner wall 404, the temperature of the processing space 110 can be more easily maintained at a desired temperature.

[0102] The lower heater 152 includes a substrate passage opening 804 disposed through the resistive heating element 802. The substrate passage opening 804 is configured to be aligned with the substrate transfer path 162. The substrate passage opening 804 is sized to accommodate the passage of a substrate, such as the substrate 150 of FIG. 1. The substrate passage opening 804 has a width W8 between about 305 mm and about 350 mm, such as between about 305 mm and about 315 mm (FIG. 8B).

[0103] The resistive heating element 802 is arranged in a serpentine configuration such that the resistive heating element 802 includes a plurality of turns and bends. The resistive heating element 802 includes vertical portions 811 arranged parallel to one another and horizontal portions 812 arranged parallel to one another. Each of the vertical portions 811 is connected to an adjacent vertical portion 811 by one of the horizontal portions 812. Current from a power source (not shown) flows through the coil of the resistive heating element 802, resistively heating the resistive heating element 802.

[0104] The resistive heating element 802 is a carbon-based material such that the resistivity of the coil material is between about 500 μΩ·cm and about 1500 μΩ·cm, for example, between about 750 μΩ·cm and about 1250 μΩ·cm. In some embodiments, the resistive heating element 802 is formed of a graphite material. Other materials for forming the resistive heating element 802 include paralytic graphite and silicon carbide. Paralytic graphite and silicon carbide may include alternative resistivity ranges. A gap 808 is formed between each of the adjacent vertical portions 811. The gap 808 allows for thermal expansion of the resistive heating element 802 and may also allow purge gas or other gases to pass therethrough. The gap 808 may be larger along a side of the resistive heating element 802 opposite the substrate passage opening 804 to allow waste gases, such as exhaust gases, to pass therethrough. Alternatively, an opening or discontinuity in the resistive heating element 802 is located near the lower chamber exhaust passage 164. The exhaust gases will pass through a gap 808 and into the lower chamber exhaust passage 164 (FIG. 1).

[0105] The resistive heating element 802 has a curved or hollow cylindrical shape and is disposed between the lower liner 154 and the inner wall 404 of the base ring 114. The resistive heating element 802 forms at least a partial ring. In the embodiment described herein, the resistive heating element 802 completely or partially surrounds the process space 110 and the lower liner 154. Each coil 806 of the resistive heating element 802 includes two vertical portions 811 joined by a horizontal portion 812 at a first distal end of each vertical portion 811, and a half of the horizontal portion 812 joined to an opposite distal end of each vertical portion 811. A plurality of coils 806 are disposed within the resistive heating element 802.

[0106] 8B is a schematic top view of the lower heater 152 of FIG. 8A. The curvature of the lower heater 152 defines an opening 810 disposed within the interior of the lower heater 152. A flange 160 is connected to an upper end of the lower heater 152 and extends radially outward from the lower heater 152. The flange 160 may be configured to connect to or fit within a groove or recess in the base body 114 of the injection ring 116. In some embodiments, the flange 160 may extend between the base body 114 and the injection ring 116. The flange 160 has a flattened ring shape.

[0107] The resistive heating element 802 is electrically connected to a first electrical connection 806a and a second electrical connection 806b. The first electrical connection 806a and the second electrical connection 806b are located on the flange 160. The first electrical connection 806a and the second electrical connection 806b are configured to be connected to a power source. The first electrical connection 806a and the second electrical connection 806b provide power to the resistive heating element 802, which can control the temperature of the lower heater 152.

[0108] 9 is a schematic cross-sectional view of the susceptor assembly 124. The susceptor assembly 124 includes a susceptor 902, a support shaft 904, and a translation assembly 194. The susceptor 902 is connected to an upper distal end of the support shaft 904, and the translation assembly 194 is connected to a lower distal end of the support shaft 904. The susceptor assembly 124 is configured to hold the substrate 150 during processing of the substrate in the processing chamber 100 (FIG. 1). The susceptor assembly 124 is configured to support the substrate 150 while rotating, raising, or lowering the substrate 150.

[0109] The susceptor 902 includes a substrate support surface 906, a bottom surface 908, an outer ledge 910 disposed radially outward of the substrate support surface 906, and a shaft coupling portion 912 mounted on the bottom surface 908. The susceptor 902 is formed of an optically transparent material to enable uniform heating of the substrate 150 by the lower lamp modules 104. In some embodiments, the susceptor 902 is made of quartz or glass.

[0110] The substrate support surface 906 is a planar surface configured to receive the substrate 150. In some embodiments, the substrate support surface 906 includes features, such as grooves or recesses, to assist in uniformly heating the substrate 150. An outer ledge 910 surrounds the outer edge of the substrate support surface 906. The outer ledge 910 surrounds and is vertically offset downwardly from the substrate support surface 906. The outer ledge 910 is configured to support a cover ring or cover plate (not shown).

[0111] A bottom surface 908 of the susceptor 902 is disposed on an opposite side of the susceptor 902 from the substrate support surface 906. A shaft coupling 912 is coupled to the bottom surface 908 and extends downwardly. The shaft coupling 912 receives a portion of an upper distal end 916 of the support shaft 904. In one embodiment, the susceptor 902 fits snugly over the support shaft 904 using the shaft coupling 912 in a cryo or room temperature environment. The material and size of the shaft coupling 912 allows the shaft coupling 912 to form a strong connection over the support shaft 904 and secure the susceptor 902 to the shaft 904 at elevated temperatures, such as those used during substrate processing. The support shaft 904 is generally straight in shape and extends between the susceptor 902 and the motion assembly 194. The support shaft 904 is sized to cast a generally small shadow on the bottom surface of the susceptor 902 during substrate processing, thereby reducing temperature differentials. A lower, distal end 918 of the support shaft 904 is coupled to the translation assembly 194. As shown, the lower, distal end 918 of the support shaft 904 may be partially disposed within the translation assembly 194.

[0112] The translation assembly 194 includes a bearing feedthrough assembly 928. The bearing feedthrough assembly 928 is a ferrofluidic feedthrough assembly and functions as a ferrofluidic bearing. The bearing feedthrough assembly 928 includes a shaft 922 coupled to the support shaft 904. The shaft 922 is rotated within the bearing feedthrough assembly 928. The use of a ferrofluidic feedthrough assembly as the bearing feedthrough assembly 928 increases the service life and reduces friction of the bearing feedthrough assembly 928 as compared to other types of bearing assemblies.

[0113] A bearing feedthrough assembly 928 is combined with the first linear spline 924 and the second linear spline 926. Both the first linear spline 924 and the second linear spline 926 are connected to the shaft 922. The first linear spline 924 and the second linear spline 926 are at least partially disposed within the bearing feedthrough assembly 928 and assist in controlling the up and down movement of the susceptor 902 and the support shaft 904. The first linear spline 924 and the second linear spline 926 are linear ball splines, but may be other types of linear bearings.

[0114] The bottom of the bearing feedthrough assembly 928 and the shaft 922 are connected to a motor 914. The motor 914 can be a direct drive or other suitable motor. The motor 914 is configured to rotate or linearly displace the shaft 922. In some embodiments, the motor 914 is two separate motors, including one rotary motor for rotating the shaft 922 on its axis and one linear motor for axially displacing the shaft. In some embodiments, the motor 914 represents the rotation assembly 196 and the lift assembly 198 described in FIG. 1.

[0115] A bellows assembly 920 is coupled to both the support shaft 904 and the bearing feedthrough assembly 928. The bellows assembly 920 surrounds at least a portion of the shaft 922 and facilitates maintaining a seal between the support shaft 904 and the bearing feedthrough assembly 928 while the support shaft 904 and susceptor 902 are raised and lowered by the motor 914.

[0116] 1A is another schematic cross-sectional view of the deposition chamber 100 of FIG. 1 according to an embodiment of the present disclosure, showing a lift arm assembly 1000. The lift arm assembly 1000 is disposed through the lower chamber exhaust passage 164 and is configured to raise or lower the substrate 150 from the susceptor 902 of the susceptor assembly 124. The lift arm assembly 1000 includes a plurality of lift pins 1012, 1014, 1016 that are configured to pass through the susceptor 902 and contact the substrate 150. The lift pins 1012, 1014, 1016 apply a force to the substrate 150 to lift the substrate 150 from the susceptor 902. When the substrate 150 is to be transferred to the susceptor 902, the substrate 150 is placed on the lift pins 1012, 1014, 1016 in the raised position by a robot (not shown). To remove the substrate 150 from the lift pins 1012, 1014, 1016, the lift pins 1012, 1014, 1016 are lowered.

[0117] The lift arm assembly 1000 includes an actuator assembly 1004, an arm assembly 1002, and lift pins 1012, 1014, and 1016. Each of the lift pins 1012, 1014, and 1016 is disposed on the arm assembly 1002. The arm assembly 1002 is disposed within the processing space 110 from the actuator assembly 1004 through the lower chamber exhaust passage 164. The arm assembly 1002 is disposed below the susceptor 902 ( FIG. 9 ) of the susceptor assembly 124.

[0118] When the lift arm assembly 1000 is present, an arm opening 1005 is disposed through the lower liner 154 and the lower heater 152. The arm opening 1005 is sized to allow the arm assembly 1002 of the lift arm assembly 1000 to pass through. In the embodiment described herein, the arm opening 1005 is disposed near the lower chamber exhaust passage 164 and includes the lower exhaust liner opening 714 (FIG. 7). In an embodiment where the arm assembly 1002 is disposed through a different opening at a different angle, the arm opening 1005 is moved to correspond to the position of the arm assembly 1002. In the embodiment described herein, the arm assembly 1002 of the lift arm assembly 1000 is disposed through the lower chamber exhaust passage 164, and the purge system of the process chamber 100 is simplified. When the arm assembly 1002 is disposed through a separate opening other than the lower chamber exhaust passage 164, the purge system of the process chamber 100 can be adjusted accordingly. Thus, locating the arm assembly 1002 through the lower chamber exhaust passage 164 is beneficial in reducing the complexity of the purge system of the processing chamber 100 .

[0119] The actuator assembly 1004 includes an actuator 1006, an alignment sensor 1018, an arm rack 1008 configured for mating contact with a portion of the actuator 1006, and a bellows assembly 1010 disposed around a portion of the arm rack 1008. The actuator assembly 1004 is disposed outside of the chamber body assembly 106 and the processing space 110. In some embodiments, the actuator assembly 1004 is coupled to an exterior surface of the chamber body assembly 106.

[0120] 10B is a schematic plan view of the lift arm assembly 1000 of FIG. 10A. The arm assembly 1002 includes a first arm 1020, a second arm 1022, and a third arm 1024. The first arm 1020 is disposed between the second arm 1022 and the third arm 1024. The first arm 1020 is shorter than the second arm 1022 or the third arm 1024. The second arm 1022 and the third arm 1024 are the same length. Each of the first arm 1020, the second arm 1022, and the third arm 1024 is coupled to a base 1036. The distal end of the first arm 1020, which is furthest from the base 1036, includes a first lift pin 1012. The distal end of the second arm 1022 furthest from the base 1036 includes a second lift pin 1016. The distal end of the third arm 1024 furthest from the base 1036 includes a third lift pin 1014.

[0121] Each of the first lift pin 1012, second lift pin 1016, and third lift pin 1014 extends upwardly from a first arm 1020, a second arm 1022, and a third arm 1024, respectively. Each of the first lift pin 1012, second lift pin 1016, and third lift pin 1014 is of a similar height and extends a similar distance from the first arm 1020, the second arm 1022, and the third arm 1024. Each of the first lift pin 1012, second lift pin 1016, and third lift pin 1014 is oriented vertically, i.e., parallel to the central axis A.

[0122] The base 1036 is disposed at the bottom of the actuator assembly 1004 and connects the first arm 1020, the second arm 1022, and the third arm 1024 to the actuator assembly 1004. The first arm 1020, the second arm 1022, and the third arm 1024 extend from a surface 1038 of the base 1036 such that the first arm 1020, the second arm 1022, and the third arm 1024 are disposed in a similar direction. In some embodiments, the first arm 1020 is disposed centrally between both the second arm 1022 and the third arm 1024. Both the second arm 1022 and the third arm 1024 extend at an angle θ2 with respect to the direction in which the first arm 1020 extends. The angle θ2 defined between the first arm 1020 and the second arm 1022 is between about 5 degrees and about 45 degrees, such as between about 10 degrees and about 35 degrees. The angle θ2 at which the second arm 1022 and the third arm 1024 extend relative to the first arm 1020 is controlled at least in part by the width of the lower chamber exhaust passage 164 or other opening through which the arm assembly 1002 extends. In an alternative embodiment, a base 1036 extends through the lower chamber exhaust passage 164, and the arms 1020, 1022, 1024 extend outwardly from the base 1036 within the processing space 110.

[0123] An arm rack 1008 is coupled to and extends above the arm assembly 1002. The arm rack 1008 couples the arm assembly 1002 to an actuator 1006. The actuator 1006 is configured to raise and lower the arm assembly 1002 using the arm rack 1008. A bellows assembly 1010 surrounds at least a portion of the arm rack 1008 and seals and protects the arm rack 1008 and the actuator 1006 from exhaust gases that have flowed through the lower chamber exhaust passage 164.

[0124] Figure 10C is a schematic side view of the lift arm assembly 1000 of Figure 10A. The lift arm assembly 1000 shown in Figure 10C is taken through section line 10C-10C of Figure 10B. An alignment sensor 1018 and an actuator assembly 1004 are shown in Figure 10C.

[0125] An alignment sensor 1018 is shown coupled to the arm assembly 1002 near the actuator assembly 1004. The alignment sensor 1018 is configured to detect the position of one or more lift pin holes (not shown) disposed through the susceptor 902 (FIG. 9). The alignment sensor 1018 is connected to one or more light pipes 1028. The light pipes 1028 extend from the alignment sensor 1018 through one of the arms 1020, 1022, 1024 of the arm assembly 1002. In the illustrated embodiment, the light pipes 1028 extend through the first arm 1020 into the first lift pin 1012. Alternatively, the light pipes 1028 extend through one of the second lift pin 1016 or the third lift pin 1014. The light pipes 1028 are directed upward and exposed at one end of the first lift pin 1012. A light pipe 1028 is utilized to detect the presence of a surface above the top of the first lift pin 1012. An alignment sensor 1018 detects a change in light intensity when the lift pin holes of the susceptor 902 rotate over the lift pins 1012. Thus, the alignment sensor 1018 is used to detect when the arm assembly 1002 is aligned with the lift pin holes and the substrate 150. The rotation of the susceptor 902 is then stopped (if necessary) so that the pins 1012, 1014, 1016 can be raised to extend through the susceptor 902 to facilitate movement of the substrate to and from the susceptor 902.

[0126] The actuator assembly 1004 includes an actuator 1006, an arm rack 1008, and a bellows assembly 1010. The actuator 1006 includes a motor 1032 and a pinion 1026 connected to the motor 1032. The pinion 1026 includes a first plurality of teeth and is configured to mesh with a second plurality of teeth 1036 of the arm rack 1008. The meshing of the arm rack 1008 and the pinion 1026 enables the motor 1032 to impart linear motion to the arm rack 1008 and the arm assembly 1002.

[0127] The bellows assembly 1010 is disposed around the bottom of the arm rack 1008 between the first plate 1030 and the second plate 1034. The first plate 1030 is disposed on top of the bellows assembly 1010 and is coupled to the body 1040 of the actuator 1006. The first plate 1030 is disposed around the arm rack 1008. The second plate 1034 is disposed at the bottom of the bellows assembly 1010 and is attached to the bottom surface of the arm rack 1008. The second plate 1034 is configured to connect the arm rack 1008 and the arm assembly 1002. In the embodiment described herein, the second plate 1034 is connected to the base 1036 of the arm assembly 1002. The bellows assembly 1010 is configured to allow vertical movement while sealing the arm rack 1008 and the actuator 1006 from exhaust gases.

[0128] Other embodiments of the arm assembly 1002 are also contemplated. In some embodiments, a Y-shaped arm is utilized. In yet other embodiments, there are more or less than three arms. In alternative embodiments, each of the first arm 1020, second arm 1022, and third arm 1024 may be of different lengths. In the embodiments described herein, the second arm 1022 and third arm 1024, mirrored about the first arm 1020, are used to balance the arm assembly 1002 and reduce unwanted torque on the actuator 1006 or bearing components.

[0129] The components described herein enable greater uniformity and deposition control in a processing chamber, such as processing chamber 100. Although shown together in a single processing chamber 100, the components described herein can be utilized separately in existing or alternative deposition processing chambers.

[0130] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is defined by the following claims.

Claims

1. 1. A process chamber for processing a substrate, comprising: an upper lamp module; A lower lamp module; a substrate support disposed between the upper lamp module and the lower lamp module; an upper window disposed between the upper lamp module and the substrate support; a lower window disposed between the lower lamp module and the substrate support; a chamber body assembly disposed between the upper lamp module and the lower lamp module and defining a portion of a processing space, Base ring and an injection ring disposed above the base ring; a chamber body assembly including: Equipped with The base ring is a substrate transfer passage disposed through the base ring; a lower chamber exhaust passage disposed through the base ring opposite the substrate transfer passage; one or more upper chamber exhaust passages, each of the one or more upper chamber exhaust passages having an upper chamber exhaust passage opening disposed above the lower chamber exhaust passage through an upper surface of the base ring; Including, The injection ring comprises: one or more injector passages disposed through the injection ring above the substrate transfer passage; one or more recesses disposed between the injection ring inner surface and the injection ring bottom surface; the one or more recesses are disposed above the one or more upper chamber exhaust passage openings and are fluidly coupled to the one or more upper chamber exhaust passages. A process chamber for processing a substrate.

2. 10. The processing chamber of claim 1, further comprising one or more gas injectors disposed within the one or more injector passages, wherein one or more gas outlets of each of the one or more gas injectors are disposed at an angle greater than 5 degrees from horizontal.

3. The processing chamber of claim 1 , wherein the one or more upper chamber exhaust passages comprises two upper chamber exhaust passages.

4. The processing chamber of claim 3 , wherein the two upper chamber exhaust passages are disposed on either side of the lower chamber exhaust passage.

5. an upper liner disposed inwardly and adjacent to the injection ring; The processing chamber of claim 1 , further comprising: a lower liner disposed inwardly from and adjacent to the base ring.

6. The processing chamber of claim 5 , wherein a lower heater is disposed between the lower liner and an inner surface of the base ring.

7. an upper cooling ring disposed above the injection ring; a lower cooling ring disposed below the base ring; The processing chamber of claim 5 further comprising:

8. 1. A process chamber for processing a substrate, comprising:

1. An upper lamp module, comprising: an upper module body including a top surface and a bottom surface; and a plurality of lamp openings disposed from the bottom surface to the top surface; an upper lamp module including: A lower lamp module; a substrate support disposed between the upper lamp module and the lower lamp module; an upper window disposed between the upper lamp module and the substrate support; a lower window disposed between the lower lamp module and the substrate support; a chamber body assembly disposed between the upper lamp module and the lower lamp module and defining a portion of a processing space; wherein the chamber body assembly comprises: a substrate transfer passage disposed through the chamber body assembly; a lower chamber exhaust passage disposed through said chamber body assembly; one or more upper chamber exhaust passages disposed through the chamber body assembly; and one or more injector passages disposed through the chamber body assembly; Including, The lower lamp module includes a lift arm assembly, the lift arm assembly comprising: an arm assembly disposed through the lower chamber exhaust passage; a plurality of lift pins coupled to the lift arm assembly; An alignment sensor; A process chamber for processing a substrate.

9. The processing chamber of claim 8 , wherein the substrate support further comprises a ferromagnetic bearing configured to enable rotation of the substrate support about an axis.

10. The processing chamber of claim 8 , wherein the upper lamp module further comprises a plurality of bulb openings disposed through the top surface.

11. 10. The processing chamber of claim 8, wherein each of the one or more upper chamber exhaust passages includes an upper chamber exhaust passage opening disposed around a portion of a circumference of the chamber body assembly, and an arc of each of the one or more upper chamber exhaust passages extends around a circumference of the chamber body assembly by between 25 degrees and 60 degrees.

12. 9. The processing chamber of claim 8, wherein the plurality of lamp openings are arranged in three distinct zones, each zone including between 5 and 10 lamp openings.

13. The processing chamber of claim 8 , wherein the chamber body assembly further comprises a lower chamber exhaust passage disposed through the inner and outer surfaces opposite the substrate transfer passage.

14. 14. The processing chamber of claim 13, wherein the one or more upper chamber exhaust passages include two upper chamber exhaust passages on either side of the lower chamber exhaust passage.

15. 1. A process chamber for processing a substrate, comprising:

1. An upper lamp module, comprising: an upper module body including a top surface and a bottom surface; and a plurality of lamp openings disposed from the bottom surface toward the top surface; an upper lamp module including: A lower lamp module; a substrate support disposed between the upper lamp module and the lower lamp module; an upper window disposed between the upper lamp module and the substrate support; a lower window disposed between the lower lamp module and the substrate support; a chamber body assembly disposed between the upper lamp module and the lower lamp module and defining a portion of a processing space, a substrate transfer passage disposed through the chamber body assembly; one or more upper chamber exhaust passages disposed through the chamber body assembly, each of the one or more upper chamber exhaust passages having an upper chamber exhaust passage opening in fluid communication with the processing space; a lower chamber exhaust passage disposed through the chamber body assembly below the upper chamber exhaust passage opening; and one or more injector passages disposed above the substrate transfer passage a chamber body assembly including: Equipped with a lift arm assembly disposed through the lower chamber exhaust passage, the lift arm assembly including a plurality of arms disposed within the processing volume; A process chamber for processing a substrate.

16. 16. The processing chamber of claim 15, wherein the lift arm assembly further comprises: a lift pin extending upwardly from each arm of the plurality of arms; and an alignment sensor connected to one of the lift pins and configured to detect a lift pin hole in the substrate support.

17. the chamber body assembly comprising: Base ring and Injection ring and Including, 16. The processing chamber of claim 15, wherein the substrate transfer passage, the one or more upper chamber exhaust passages, and the lower chamber exhaust passage are disposed through the base ring, and the one or more injector passages are disposed through the injection ring.

18. A process chamber for processing a substrate, comprising: an upper lamp module; A lower lamp module; a substrate support disposed between the upper lamp module and the lower lamp module; an upper window disposed between the upper lamp module and the substrate support; a lower window disposed between the lower lamp module and the substrate support; a chamber body assembly disposed between the upper lamp module and the lower lamp module and defining a portion of a processing space, a substrate transfer passage disposed through the chamber body assembly; a lower chamber exhaust passage disposed through the chamber body assembly opposite the substrate transfer passage; two upper chamber exhaust passages, each of the two upper chamber exhaust passages having an upper chamber exhaust passage opening disposed above the lower chamber exhaust passage; and one or more injector passages disposed through the chamber body assembly above the substrate transfer passage; a chamber body assembly including: A process chamber for processing a substrate comprising:

19. The processing chamber of claim 18, wherein the two upper chamber exhaust passages are disposed on either side of the lower chamber exhaust passage.

Citation Information

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