Substrate Processing System

Abstract

To relatively easily realize a substrate processing system capable of continuously performing batch processing and single-wafer processing on a substrate.SOLUTION: According to the present invention, batch processing and single wafer processing are performed continuously on a substrate by connecting an individual batch processing device and a single wafer processing device with a relay device. With this configuration, it is possible to relatively easily realize a substrate processing system that can perform batch processing and single wafer processing continuously on the substrate by reliably utilizing the technology cultivated in the individual batch processing device and the single wafer processing device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing system for performing predetermined processing on various substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (Electroluminescence) display devices, glass substrates for photomasks, and substrates for optical disks. [Background technology]

[0002] Conventionally, this type of apparatus includes those equipped with a batch module and a single-wafer module (see, for example, Patent Document 1). A batch module performs a predetermined process on multiple substrates at once. A single-wafer module performs a predetermined process on each substrate. Batch modules and single-wafer modules each have their own unique advantages. A substrate processing apparatus equipped with a batch module and a single-wafer module combines the advantages of both, thereby achieving a configuration that is more advantageous than a batch substrate processing apparatus or a single-wafer substrate processing apparatus.

[0003] The apparatus of Patent Document 1 includes a single wafer processing section for single wafer substrate processing at the rear of a loading / unloading section that loads and unloads cassettes, and a batch processing section for batch substrate processing at the rear of the single wafer processing section. Therefore, according to this apparatus configuration, substrates removed from cassette C in the loading / unloading section first pass through the single wafer processing section and are transported to the batch processing section. After the batch processing in the batch processing section, the substrates are returned to the single wafer processing section. The single wafer processing section then performs single wafer processing on the substrates that have been batch processed. This series of substrate processing operations is achieved by an apparatus in which a batch module and a single wafer module are integrated. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-64654 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the hardware configuration of the above-mentioned apparatus is significantly different from that of existing substrate processing apparatuses, resulting in various problems. Existing substrate processing apparatuses include those that perform only batch processing and those that perform only single-wafer processing. An apparatus that performs only batch processing is configured to remove substrates en masse from a cassette that stores multiple substrates, perform batch processing, and return the substrates to the cassette. On the other hand, an apparatus that performs only single-wafer processing is configured to remove substrates one by one from the cassette, perform single-wafer processing, and return the substrates to the cassette. These two types of apparatus have a long operational track record, and their apparatus configurations and operating methods are well established. However, an apparatus configuration that integrates a batch-type module and a single-wafer processing module, as in Patent Document 1, may result in unexpected malfunctions during operation. Furthermore, manufacturing a new apparatus that integrates a batch-type module and a single-wafer processing module would increase the design and manufacturing costs of the apparatus.

[0006] The present invention has been made in view of the above circumstances, and has as its object to relatively easily realize a substrate processing system that can perform batch processing and single-wafer processing on substrates successively. [Means for solving the problem]

[0007] In order to solve the above problems, the present invention has the following configuration. (1) A substrate processing system that successively performs batch processing, in which a plurality of substrates are processed collectively, and single-wafer processing, in which substrates are processed one by one, and includes a batch processing device that performs batch processing, at least one single-wafer processing device that performs single-wafer processing on substrates that have been batch-processed, and at least one relay device that has two positions: a carry-in position for receiving batch-processed substrates from the batch processing device, and an unloading position for transferring the substrates received at the carry-in position to the single-wafer processing device, and the batch processing device processes a plurality of substrates in a horizontal position. The apparatus comprises a first carrier mounting shelf on which carriers are mounted at predetermined intervals in the vertical direction, a transfer block adjacent to the first carrier mounting shelf, and a batch processing block adjacent to the transfer block, the transfer block comprising a substrate handling mechanism that collectively removes a plurality of substrates from a carrier mounted on the first carrier mounting shelf, and a first position conversion mechanism that collectively converts the plurality of substrates removed from the carrier from a horizontal position to a vertical position, and the batch processing block comprises a substrate handling mechanism that collectively removes a plurality of substrates from a carrier mounted on the first carrier mounting shelf, and a first position conversion mechanism that collectively converts the plurality of substrates removed from the carrier from a horizontal position to a vertical position, and the batch processing block comprises a substrate handling mechanism that collectively performs immersion processing on the plurality of substrates in the vertical position. and a batch transport mechanism for transporting a plurality of substrates in a vertical position collectively between the transfer block, the batch processing tank, and the carry-in position of the relay device. The single wafer processing apparatus comprises a second carrier placement shelf for placing the carriers, an indexer block adjacent to the second carrier placement shelf, and a single wafer processing block adjacent to the indexer block. The single wafer processing block comprises a plurality of single wafer processing chambers for drying and processing horizontally oriented substrates one by one, and a batch transport mechanism for transporting a plurality of substrates in a vertical position collectively between the transfer block, the batch processing tank, and the carry-in position of the relay device. a single wafer transport mechanism that receives processed substrates in a horizontal position one by one and transports them to the single wafer processing chamber, the indexer block having an indexer robot that stores processed substrates in the carrier placed on the second carrier loading shelf, and the relay device having a second position conversion mechanism that converts the substrates received from the batch processing device from a vertical position to a horizontal position, and a relay transport mechanism that transports substrates along a substrate transport path provided between the loading position and the unloading position.

[0008] [Operations and Effects] According to the invention pertaining to (1) above, by connecting individual batch processing devices and single wafer processing devices with relay devices, it is possible to configure a substrate processing system that continuously performs batch processing, in which multiple substrates are processed at once, and single wafer processing, in which substrates are processed one by one. That is, the present invention includes a relay device having two defined positions: a loading position for receiving batch-processed substrates from a batch processing device, and an unloading position for transferring the substrates received at the loading position to a single wafer processing device. The relay device receives substrates that have completed batch processing in individual batch processing devices at the loading position, and transfers them to the individual single wafer processing device via the unloading position. In this way, it is possible to configure a substrate processing system that continuously performs batch processing and single wafer processing based on the technology developed for each device. It is also possible to reduce system design and manufacturing costs.

[0009] In addition to the invention related to (1) above, this specification also discloses the following inventions.

[0010] (2) In the substrate processing system described in (1), the relay device is characterized in that the second attitude change mechanism is provided on the loading position side, and further includes a single substrate shift mechanism that takes out one substrate at a time from a plurality of substrates that have been converted collectively from a vertical attitude to a horizontal attitude by the second attitude change mechanism and passes it to the relay transport mechanism, and the relay transport mechanism transports the horizontally oriented substrates passed from the single substrate shift mechanism one by one toward the unloading position.

[0011] According to the configuration of [Actions and Effects] (2), the relay device is configured to change the posture of multiple substrates at the loading position at once, and then transfer the posture-changed substrates one by one to the unloading position via the relay transport mechanism. If the single-wafer processing device is configured to retrieve substrates one by one at the unloading position of the relay device in this way, the configuration of the single-wafer processing device can be simplified and the number of single-wafer processing chambers can be increased, thereby providing a substrate processing system with high throughput.

[0012] (3) In the substrate processing system described in (1), the relay device is characterized in that the second posture change mechanism is provided on the loading position side, and the relay transport mechanism transports multiple substrates that have been converted from a vertical posture to a horizontal posture by the second posture change mechanism all at once toward the unloading position.

[0013] According to the configuration of [Actions and Effects] (3), the relay device is configured to change the posture of multiple substrates at the loading position all at once, and then transfer the posture-changed substrates all at once to the unloading position via the relay transport mechanism. With this configuration, the speed at which the substrates are transported in the relay device can be increased, and a substrate processing system with a smoother flow of substrates can be provided.

[0014] (4) In the substrate processing system described in (1), the relay device is characterized in that the second position change mechanism is provided on the unloading position side, the relay transport mechanism transports multiple substrates in a vertical position received from the batch processing device to the second position change mechanism in one go, and the second position change mechanism converts the multiple substrates in a vertical position received from the relay transport mechanism in one go to a horizontal position.

[0015] [Actions and Effects] According to the configuration of (4), the relay device is configured to transport multiple substrates obtained at the loading position to the single-wafer processing device side by the relay transport mechanism, and to change the posture of the multiple substrates at the unloading position. This configuration can increase the speed at which substrates are transported in the relay device, providing a substrate processing system with smoother substrate flow. Furthermore, by placing the second posture change mechanism on the single-wafer processing device side, the configuration of the batch processing device can be simplified.

[0016] (5) In the substrate processing system described in (1), the relay transport mechanism is configured as a belt conveyor mechanism.

[0017] According to the configuration of [Actions and Effects] (5), the relay transport mechanism in the relay device is configured as a belt conveyor mechanism. With this configuration, it is possible to provide a substrate processing system that transports horizontally oriented substrates one by one in a simple and reliable manner.

[0018] (6) In the substrate processing system described in (1), the relay transport mechanism is configured by a robot capable of gripping a substrate.

[0019] According to the configuration of [Actions and Effects] (6), the relay transport mechanism in the relay device is composed of a robot capable of gripping a substrate. With this configuration, it is possible to provide a substrate processing system that can reliably transport multiple substrates.

[0020] (7) In the substrate processing system described in (1), a waiting tank is provided at the loading position of the relay device in which multiple substrates in a vertical position loaded from the batch processing device are immersed in liquid.

[0021] According to the configuration of [Actions and Effects] (7), a waiting tank is provided at the loading position of the relay device, in which multiple vertically oriented substrates loaded from the batch processing device are immersed in liquid. With this configuration, a substrate processing system can be provided that reliably transports multiple substrates without drying them out in the relay device.

[0022] (8) In the substrate processing system described in (1), the relay device is characterized in that it is equipped with a liquid supply unit that supplies liquid to the substrate transported by the relay transport mechanism to wet the surface of the substrate with the liquid.

[0023] According to the configuration of [Actions and Effects] (8), the relay device includes a liquid supply unit that supplies liquid to the substrates transported by the relay transport mechanism to wet the surfaces of the substrates with the liquid. With this configuration, it is possible to provide a substrate processing system that reliably transports multiple substrates in the relay device without drying them out.

[0024] (9) In the substrate processing system described in (1), the relay device is characterized in that a batch processing device side shutter capable of blocking the flow of atmosphere through the substrate transport path of the relay device is provided on the loading position side.

[0025] According to the configuration of [Actions and Effects] (9), a batch processing device shutter capable of blocking the flow of atmosphere through the substrate transport path of the relay device is provided on the loading position side. With this configuration, the atmosphere of the batch processing device can be blocked from the atmosphere of the single wafer processing device, so that a substrate processing system can be provided in which breakdowns in the various mechanisms of the single wafer processing device are prevented even if corrosive chemicals are used in the batch processing device.

[0026] (10) In the substrate processing system described in (1), the relay device is characterized in that a single-wafer processing device side shutter capable of blocking the flow of atmosphere through the substrate transport path of the relay device is provided on the unloading position side.

[0027] According to the configuration of (10), a single wafer processing apparatus shutter is provided at the unloading position, which can block the atmosphere flowing through the substrate transport path of the relay apparatus. This configuration can block the atmosphere of the batch processing apparatus from the atmosphere of the single wafer processing apparatus, thereby providing a substrate processing system that prevents breakdowns in the various mechanisms of the single wafer processing apparatus, even if corrosive chemicals are used in the batch processing apparatus.

[0028] (11) In the substrate processing system described in (1), the relay device is characterized in that the unloading position is located in the middle layer of a stack formed by vertically stacking the single-wafer processing chambers in the single-wafer processing apparatus.

[0029] [Actions and Effects] According to the configuration of (11), the relay device is located in the middle layer of a stack of single wafer processing chambers stacked vertically in a single wafer processing apparatus. This configuration allows the single wafer processing chambers located in the upper layer of the stack to be positioned close to the unloading position of the relay device, allowing substrates to be transported from the relay device to the single wafer processing chambers with only minor substrate transport. Therefore, this configuration provides a substrate processing system with high throughput. Furthermore, this configuration also provides the same effect for the single wafer processing chambers located in the lower layer of the stack. In this sense, the throughput of the substrate processing system is also high.

[0030] (12) In the substrate processing system described in (1), the unloading position of the relay device and the plurality of single wafer processing chambers are arranged around the single wafer transport mechanism.

[0031] [Operation and Effect] According to the configuration of (12), the single wafer transport mechanism in the single wafer processing apparatus remains at the unloading position of the relay device and at a position surrounded by each of the multiple single wafer processing chambers. This configuration allows the single wafer processing chamber to be located close to the unloading position. Therefore, this configuration allows substrates to be transported from the relay device to the single wafer processing chamber with only minor substrate transport, providing a substrate processing system with high throughput.

[0032] (13) The substrate processing system according to (1), wherein the relay device is provided closer to the transfer block than at least one batch processing tank in the batch processing device.

[0033] According to the configuration of [Operation and Effect] (13), the relay device is provided closer to the transfer block than at least one batch processing tank in the batch processing device. With this configuration, even if the size of the single wafer processing device and the batch processing device differs, the relay device can bridge the two devices. This is because the single wafer processing device extends at least to the rear of the transfer block.

[0034] (14) The substrate processing system according to (1), characterized in that it is provided with a carrier transport mechanism that transports the carrier between the batch processing device and the single wafer processing device so that the substrate after the substrate processing is returned to the same carrier that housed the substrate before the substrate processing.

[0035] [Operation and Effect] According to the configuration of (14), a carrier transport mechanism is provided that transports the carrier between the batch processing device and the single wafer processing device so that the processed substrate is returned to the same carrier that housed the processed substrate before the substrate processing. With this configuration, the processed substrate can be stored in the same carrier as the carrier that housed the processed substrate before the substrate processing, and a substrate processing system that makes it easy to manage the substrates can be provided.

[0036] (15) In the substrate processing system described in (1), the batch processing device comprises a first housing that houses each block that constitutes the batch processing device, and a first load port that protrudes from a first wall surface that is one of the walls that constitutes the first housing and is perpendicular to a predetermined direction from the batch processing block toward the transfer block, and the single wafer processing device comprises a second housing that houses each block that constitutes the single wafer processing device, and a second load port that protrudes from a second wall surface that is one of the walls that constitutes the second housing and is perpendicular to the predetermined direction, and the second load port is located on the same side as the first load port in the predetermined direction.

[0037] According to the configuration of [Actions and Effects] (15), the batch processing apparatus comprises a first load port protruding from a first wall of a first housing that houses the blocks that make up the batch processing apparatus, and a second load port protruding from a second wall of a second housing that houses the blocks that make up the single wafer processing apparatus, the second load port being located on the same side as the first load port. With this configuration, carriers can be transported from the batch processing apparatus to the single wafer processing apparatus using a separate carrier transport mechanism provided in the plant where the substrate processing system is installed, thereby providing a substrate processing system that allows for easy carrier movement.

[0038] (16) In the substrate processing system described in (1), the batch processing device comprises a first housing that houses each block that constitutes the batch processing device, and a first load port that protrudes from a first wall surface that constitutes the first housing and is perpendicular to a predetermined direction from the batch processing block toward the transfer block; the single wafer processing device comprises a second housing that houses each block that constitutes the single wafer processing device, and a second load port that protrudes from a second wall surface that constitutes the second housing and is perpendicular to the predetermined direction; the relay device comprises an intermediate housing that connects the first housing and the second housing, which are spaced apart from each other, and the intermediate housing is disposed between a first orthogonal wall surface of the first housing that is perpendicular to the first wall surface and a second orthogonal wall surface of the second housing that is perpendicular to the second wall surface and is disposed at a position opposite the first orthogonal wall surface.

[0039] [Operation and Effect] According to the configuration of (16), the first housing constituting the batch processing device and the second housing constituting the single wafer processing device are spaced apart without sharing a wall, and the relay device is provided to bridge these housings. With this configuration, maintenance of the device can be performed using the gap between the first housing and the second housing, making it possible to provide a substrate processing system that is easy to maintain.

[0040] (17) A substrate processing system according to (1), comprising one batch processing device, first and second single wafer processing devices, and first and second relay devices, wherein the batch processing device is arranged with a gap between the first single wafer processing device and the second single wafer processing device, the batch processing device and the first single wafer processing device are connected via the first relay device, and the batch processing device and the second single wafer processing device are connected via the second relay device.

[0041] [Operation and Effect] According to the configuration of (17), the batch processing device is arranged with a gap between the first single wafer processing device and the second single wafer processing device, and the batch processing device and the first single wafer processing device are connected via a first relay device. The batch processing device and the second single wafer processing device are connected via a second relay device. By providing a plurality of single wafer processing devices for the batch processing device in this manner, it is possible to suppress a decrease in throughput that occurs in single wafer processing.

[0042] (18) In the substrate processing system described in (1), the substrate processing system comprises one batch processing device, first and second single wafer processing devices, and first and second relay devices, wherein the batch processing device, the first single wafer processing device, and the second single wafer processing device are arranged in that order with a gap therebetween, the batch processing device and the first single wafer processing device are connected via the first relay device, and the batch processing device and the second single wafer processing device are connected via the second relay device.

[0043] [Operation and Effect] According to the configuration of (18), the batch processing device, the first single wafer processing device, and the second single wafer processing device are arranged in that order with a gap between them, and the batch processing device and the first single wafer processing device are connected via a first relay device. The batch processing device and the second single wafer processing device are connected via a second relay device. By providing a batch processing device with multiple single wafer processing devices in this way, it is possible to suppress a decrease in throughput that occurs in single wafer processing.

[0044] (19) The substrate processing system according to (1), further comprising an airflow generating unit that causes the atmosphere of the relay device to flow into the batch processing device.

[0045] [Operation and Effect] According to the configuration of (19), the batch processing device includes an airflow generating unit that allows the atmosphere of the relay device to flow into the batch processing device. This configuration provides a substrate processing system that prevents breakdowns in the mechanisms of the single-wafer processing device, even if an erosive chemical is used in the batch processing device. This is because the airflow generating unit prevents the atmosphere from flowing from the batch processing device into the single-wafer processing device.

[0046] (20) In the substrate processing system described in (1), the batch processing block is provided with a batch drying chamber that dries multiple substrates at once, and the single wafer processing block is provided with a single wafer processing chamber that can chemically process substrates one by one, and the substrate processing system is further configured to be able to select control regarding a batch processing mode in which substrate processing is completed using only the batch processing device, control regarding a single wafer processing mode in which substrate processing is completed using only the single wafer processing device, and control regarding a hybrid processing mode in which substrate processing is completed using both the batch processing device and the single wafer processing device.

[0047] [Operation and Effect] According to the configuration of (20), substrate processing can be completed in a single wafer processing apparatus or in a batch processing apparatus. Furthermore, substrate processing can be completed in both a batch processing apparatus and a single wafer processing apparatus. With this configuration, a substrate processing system can be provided that can be operated in a variety of ways depending on the purpose of substrate processing. [Effects of the Invention]

[0048] According to the present invention, batch processing and single wafer processing are performed continuously on substrates by connecting individual batch processing devices and single wafer processing devices with relay devices. This configuration allows a substrate processing system to be constructed by reliably utilizing the highly reliable device configurations developed for batch processing devices and single wafer processing devices. Therefore, according to the present invention, it is possible to predict what types of problems may occur during operation, and it is also possible to reduce the design and manufacturing costs of the substrate processing system. [Brief explanation of the drawings]

[0049] [Figure 1] 1 is a plan view illustrating an overall configuration of a substrate processing system according to a first embodiment. [Figure 2] 1 is a plan view illustrating the overall configuration of a batch processing apparatus according to a first embodiment. [Figure 3] FIG. 2 is a schematic diagram illustrating the configuration of an HVC attitude conversion unit in the first embodiment. [Figure 4] 3A to 3C are schematic diagrams illustrating the configuration of a first attitude conversion mechanism in the first embodiment. [Figure 5] FIG. 2 is a schematic diagram illustrating the configuration of a relay device according to the first embodiment. [Figure 6] FIG. 2 is a schematic diagram illustrating the configuration of a relay device according to the first embodiment. [Figure 7] FIG. 2 is a schematic diagram illustrating the configuration of a relay device according to the first embodiment. [Figure 8] FIG. 2 is a schematic diagram illustrating the configuration of a relay device according to the first embodiment. [Figure 9] FIG. 2 is a schematic diagram illustrating the configuration of a relay device according to the first embodiment. [Figure 10] FIG. 2 is a schematic diagram illustrating the configuration of a relay device according to the first embodiment. [Figure 11] FIG. 2 is a schematic diagram illustrating the configuration of a shutter in the first embodiment. [Figure 12] FIG. 2 is a schematic diagram illustrating a configuration of a relay device according to the first embodiment. [Figure 13] 1 is a flowchart illustrating a flow of substrate processing according to the first embodiment. [Figure 14] 1 is a schematic diagram illustrating a flow of substrate processing according to Example 1. FIG. [Figure 15] 1 is a schematic diagram illustrating a flow of substrate processing according to Example 1. FIG. [Figure 16] 1 is a flowchart illustrating a flow of substrate processing according to the first embodiment. [Figure 17] 1 is a schematic diagram illustrating a flow of substrate processing according to Example 1. FIG. [Figure 18] FIG. 10 is a plan view illustrating a substrate processing system according to a second embodiment. [Figure 19] FIG. 10 is a schematic diagram illustrating the configuration of a forward / reverse rotating belt conveyor according to a second embodiment. [Figure 20] 10 is a schematic diagram illustrating the flow of substrate processing according to Example 2. FIG. [Figure 21] FIG. 10 is a plan view illustrating a substrate processing system according to a third embodiment. [Figure 22] 10A to 10C are schematic diagrams illustrating a substrate transfer procedure according to the third embodiment. [Figure 23] FIG. 10 is a schematic diagram illustrating the flow of substrate processing according to the third embodiment. [Figure 24] FIG. 10 is a schematic diagram illustrating the flow of substrate processing according to the third embodiment. [Figure 25] FIG. 10 is a plan view illustrating a substrate processing system according to a modified example. [Figure 26] FIG. 10 is a plan view illustrating a substrate processing system according to a modified example. [Figure 27] FIG. 10 is a plan view illustrating a substrate processing system according to a modified example. [Figure 28] FIG. 10 is a plan view illustrating a substrate processing system according to a modified example. [Figure 29] FIG. 10 is a plan view illustrating a substrate processing system according to a modified example. [Figure 30] FIG. 10 is a plan view illustrating a substrate processing system according to a modified example. [Figure 31] FIG. 10 is a schematic diagram illustrating a substrate processing system according to a modified example. [Figure 32] FIG. 10 is a schematic diagram illustrating a substrate processing system according to a modified example. [Figure 33] FIG. 10 is a schematic diagram illustrating a substrate processing system according to a modified example. [Figure 34] FIG. 10 is a schematic diagram illustrating a substrate processing system according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0050] An embodiment of the present invention will be described below with reference to the drawings. The substrate processing system of the present invention continuously performs batch processing, in which a plurality of substrates W are processed collectively, and single-wafer processing, in which substrates W are processed one by one, and is configured such that the batch processing device for batch processing and the single-wafer processing device for single-wafer processing are connected by a relay device.

[0051] The substrate processing system according to the present invention performs various processes such as chemical processing, cleaning processing, and drying processing on substrates W. The substrate processing system employs a processing method (a so-called hybrid method) that combines both a batch processing method in which a plurality of substrates W are processed at once, and a single-wafer processing method in which substrates W are processed one by one. The batch processing method is a processing method in which a plurality of substrates W arranged in a vertical position are processed at once. The single-wafer processing method is a processing method in which horizontally oriented substrates W are processed one by one. [Example]

[0052] <1. Overall structure> As shown in Fig. 1, the substrate processing system comprises a batch processing device 1 and a single wafer processing device 2 that are configured separately, and a relay device 6 that connects the two devices 1 and 2. The batch processing device 1 is involved in batch processing, which processes multiple substrates at once, while the single wafer processing device 2 is involved in single wafer processing, which processes substrates one by one. The relay device 6 is configured to transport substrates that have been batch processed from the batch processing device 1 to the single wafer processing device 2, and is a bridge structure provided at a position intermediate the batch processing device 1 and the single wafer processing device 2.

[0053] As shown in Fig. 1, the batch processing apparatus 1 and the single wafer processing apparatus 2 each have blocks separated by partitions. That is, the batch processing apparatus 1 has a stocker block 3, a transfer block 5 adjacent to the stocker block 3, and a batch processing block 7 adjacent to the transfer block 5. Fig. 2 shows a specific configuration of the batch processing block 7 in the batch processing apparatus 1. On the other hand, the single wafer processing apparatus 2 has an indexer block 4 and a single wafer processing block 8 adjacent to the indexer block 4.

[0054] The batch processing apparatus 1 has a first housing 1A that houses the blocks that make up the batch processing apparatus 1, and the single wafer processing apparatus 2 has a second housing 2A that houses the blocks that make up the single wafer processing apparatus 2. The first housing 1A has a first load port 9 that protrudes from a first wall surface that is one of the walls that make up the first housing and is perpendicular to the Y direction from the batch processing block 7 toward the transfer block 5. The second housing 2A has a second load port 10 that protrudes from a second wall surface that is one of the walls that make up the second housing 2A and is perpendicular to the Y direction, and the second load port 10 is located at the same position as the first load port 9 in the Y direction.

[0055] For convenience, in this specification, the direction in which the stocker block 3, the transfer block 5, and the batch processing block 7 in the batch processing apparatus 1 are arranged is referred to as the "front-rear direction X." The front-rear direction X is also the direction in which the indexer block 4 and the single-wafer processing block 8 in the single-wafer processing apparatus 2 are arranged. The front-rear direction X extends horizontally. Within the front-rear direction X, the direction from the transfer block 5 toward the stocker block 3 in the batch processing apparatus 1 is referred to as the "front." The front also refers to the direction from the single-wafer processing block 8 toward the indexer block 4 in the single-wafer processing apparatus 2. The direction opposite the front is referred to as the "rear." The horizontal direction perpendicular to the front-rear direction X is referred to as the "width direction Y." For convenience, one direction of the "width direction Y" is referred to as the "right" and the other direction is referred to as the "left." For convenience, the direction perpendicular to the front-rear direction X and the width direction Y (height direction) is referred to as the "vertical direction Z." In each figure, for reference, front, rear, right, left, top, and bottom are indicated as appropriate.

[0056] In the substrate processing system of the present invention, substrates W are first batch-processed in a batch processing device 1, and the batch-processed substrates W are then transported by a relay device 6 to a single-wafer processing device 2. The single-wafer processing device 2 then processes the substrates W individually to complete the entire substrate processing process. Below, the specific configurations of each device will be described in the order of the batch processing device 1, relay device 6, and single-wafer processing device 2, along with the flow of substrates W in the substrate processing system of the present invention.

[0057] <2. Batch processing equipment: Stocker block> The stocker block 3 is equipped with a first load port 9, which serves as an entrance through which a carrier C, which stores multiple substrates W in a horizontal position and vertically spaced at predetermined intervals, is introduced into the block. The first load port 9 protrudes from the outer wall of the stocker block 3, which extends in the width direction (Y direction).

[0058] A plurality of substrates W (for example, 25 substrates) are stored in a single carrier C, stacked horizontally at regular intervals. The carrier C storing unprocessed substrates W to be carried into the batch processing apparatus 1 is first placed on the first load port 9. The carrier C has a plurality of horizontally extending grooves (not shown) formed therein that store the substrates W with their surfaces spaced apart. One substrate W is inserted into each of the grooves. An example of a carrier C is a sealed FOUP (Front Opening Unify Pod). In the present invention, an open container may also be used as the carrier C.

[0059] The internal structure of the stocker block 3 will now be described. The stocker block 3 is equipped with a transport storage unit ACB that stocks and manages carriers C. The transport storage unit ACB is equipped with a carrier transport mechanism 11 that transports the carriers C and shelves 13 on which the carriers C are placed. The stocker block 3 can stock one or more carriers C.

[0060] The stocker block 3 has multiple shelves 13 on which carriers C are placed. The shelves 13 are provided on a partition wall separating the stocker block 3 and the transfer block 5. The shelves 13 include a stock shelf 13b on which carriers C are simply temporarily placed, and a carrier placement shelf 13a for substrate removal that is accessed by the first substrate transport mechanism HTR of the transfer block 5. The carrier placement shelf 13a for substrate removal and storage corresponds to the first carrier placement shelf of the present invention. The carrier placement shelf 13a is configured to place carriers C from which substrates W are to be removed. In this embodiment, one carrier placement shelf 13a is provided, but multiple carrier placement shelves 13a may be provided. The carrier transport mechanism 11 takes in a carrier C storing an unprocessed substrate W from the first load port 9 and places it on the carrier placement shelf 13a for substrate removal. At this time, the carrier transport mechanism 11 can temporarily place the carrier C on a stock shelf 13b before placing it on the carrier placement shelf 13a. The number of carrier placement shelves 13a included in the stocker block 3 is one or more. The first substrate transport mechanism corresponds to the substrate handling mechanism of the present invention.

[0061] <3. Batch processing equipment: Transfer block> The transfer block 5 is disposed adjacent to the rear of the stocker block 3. The transfer block 5 includes a first substrate transport mechanism HTR that can access a carrier C placed on the carrier placement shelf 13a for substrate removal, an HVC position changer 23 that changes the position of multiple substrates W collectively from a horizontal position to a vertical position, and a pusher mechanism 25. The first substrate transport mechanism HTR corresponds to the substrate handling mechanism of the present invention. The HVC position changer 23 and the pusher mechanism 25 form the first position change mechanism 15, which corresponds to the first position change mechanism of the present invention. Furthermore, the transfer block 5 is provided with a substrate transfer position PP for transferring multiple substrates W to the second substrate transport mechanism WTR provided in the batch transfer region R2. The first substrate transport mechanism HTR, HVC position changer 23, and pusher mechanism 25 are arranged in this order in the Y direction.

[0062] The first substrate transport mechanism HTR is provided on the right side behind the transport and storage unit ACB of the stocker block 3. The first substrate transport mechanism HTR is a mechanism for collectively removing multiple substrates W from carriers C placed on the carrier mounting shelf 13a for substrate removal and storage. The first substrate transport mechanism HTR has multiple (e.g., 25) hands 51 that transport multiple substrates W collectively. Each hand 51 supports one substrate W. The first substrate transport mechanism HTR collectively removes multiple substrates W (e.g., 25) from carriers C placed on the carrier mounting shelf 13a of the stocker block 3. The first substrate transport mechanism HTR can then transport the multiple substrates W it has grasped to the support base 23A of the HVC position conversion unit 23. The HVC position conversion unit 23 converts the multiple substrates W received from a horizontal position to a vertical position. The pusher mechanism 25 is configured to hold a plurality of substrates W in a vertical position and move them up and down and left and right.

[0063] FIG. 3 illustrates the HVC attitude conversion unit 23 of the first embodiment. The HVC attitude conversion unit 23 includes a pair of horizontal holding units 23B and a pair of vertical holding units 23C that extend in the vertical direction (Z direction). The support base 23A has a support surface extending in the XY plane that supports the horizontal holding units 23B and the vertical holding units 23C. The rotation drive mechanism 23D is configured to rotate the horizontal holding units 23B and the vertical holding units 23C together with the support base 23A by 90°. This rotation causes the horizontal holding units 23B and the vertical holding units 23C to extend in the left-right direction (Y direction). FIG. 4 is a schematic diagram illustrating the operation of the HVC attitude conversion unit 23. Hereinafter, the configuration of each unit will be described with reference to FIGS. 3 and 4.

[0064] The horizontal holding part 23B supports a plurality of horizontally oriented substrates W from below. That is, the horizontal holding part 23B has a comb-shaped structure with a plurality of protrusions corresponding to the substrates W to be supported. Between adjacent protrusions there is a long, narrow recess in which the peripheral edge of the substrate W is located. When the peripheral edge of the substrate W is inserted into this recess, the lower surface of the horizontally oriented substrate W comes into contact with the upper surface of the protrusion, and the substrate W is supported in a horizontal position.

[0065] The vertical holding part 23C supports a plurality of vertically oriented substrates W from below. That is, the vertical holding part 23C has a comb-shaped structure with a plurality of protrusions corresponding to the substrates W to be supported. Between adjacent protrusions there is a narrow V-groove in which the peripheral edge of the substrate W is located. When the peripheral edge of the substrate W is inserted into this V-groove, the substrate W is clamped between the V-grooves and supported in a vertical position. Two vertical holding parts 23C are provided on the support base 23A, so that the substrate W is clamped at two points on its peripheral edge by different V-grooves.

[0066] A pair of horizontal holding members 23B and a pair of vertical holding members 23C extending in the vertical direction (Z direction) are arranged along an imaginary circle corresponding to the substrate W in a horizontal position so as to surround the substrate W to be held. The pair of horizontal holding members 23B are spaced apart by the diameter of the substrate W and hold one end of the substrate W and the other end that is the farthest from the one end. In this way, the pair of horizontal holding members 23B support the substrate W in a horizontal position. On the other hand, the pair of vertical holding members 23C are spaced apart by a distance shorter than the diameter of the substrate W and support a predetermined portion of the substrate W and a specific portion located near the predetermined portion. In this way, the pair of vertical holding members 23C support the substrate W in a vertical position. The pair of horizontal holding members 23B are located at the same position in the left-right direction (Y direction), and the pair of vertical holding members 23C are located at the same position in the left-right direction (Y direction). The pair of vertical holding members 23C are located on the side of the pair of horizontal holding members 23B in the direction in which the support base 23A rotates and tilts (to the left).

[0067] The rotation drive mechanism 23D supports the support table 23A so that it can rotate at least 90° around a horizontal axis AX2 extending in the front-to-rear direction (X direction). When the support table 23A, which is in a horizontal state, rotates 90°, the support table 23A becomes vertical, and the postures of the multiple substrates W held by the horizontal holding part 23B and the vertical holding part 23C are changed from the horizontal posture to the vertical posture.

[0068] As shown in FIG. 4(f), the pusher mechanism 25 includes a pusher 25A on which a vertically oriented substrate W can be mounted, a lifting and rotating unit 25B for rotating and raising and lowering the pusher 25A, a horizontal moving unit 25C for moving the lifting and rotating unit 25B in the left-right direction (Y direction), and a rail 25D extending in the left-right direction (Y direction) for guiding the horizontal moving unit 25C. The pusher 25A is configured to support the lower portion of each of multiple (e.g., 50) vertically oriented substrates W. The lifting and rotating unit 25B is configured to be located below the pusher 25A and includes a telescopic mechanism for raising and lowering the pusher 25A in the vertical direction. The lifting and rotating unit 25B can also rotate the pusher 25A at least 180° around a vertical axis. The horizontal moving unit 25C is configured to support the lifting and rotating unit 25B and horizontally move the pusher 25A and the lifting and rotating unit 25B. The horizontal movement unit 25C is guided by the rails 25D and can move the pusher 25A from a pick-up position close to the HVC attitude conversion unit 23 to the substrate transfer position PP. The horizontal movement unit 25C can also shift the pusher 25A, which is in a vertical attitude, in the direction of the arrangement of the substrates W by a distance corresponding to a half pitch in the substrate arrangement.

[0069] Here, the operation of the HVC attitude conversion unit 23 and the pusher mechanism 25 will be described. The HVC attitude conversion unit 23 and the pusher mechanism 25 arrange, in a face-to-face manner, for example, a total of 50 substrates W housed in two carriers C at a predetermined interval (for example, 5 mm). The 25 substrates W in the first carrier C will be described as first substrates W1 belonging to the first substrate group. Similarly, the 25 substrates W in the second carrier C will be described as second substrates W2 belonging to the second substrate group. Note that in Figures 4(a) to 4(f), for convenience of drawing, the number of first substrates W1 is three and the number of second substrates W2 is three.

[0070] FIG. 4(a) shows the state in which the first substrates W1 in a horizontal position are transferred en bloc to the HVC position conversion unit 23 by the first substrate transport mechanism HTR. At this time, the device surfaces (surfaces on which circuit patterns are formed) of the first substrates W1 face upward. The 25 first substrates W1 are arranged at a predetermined interval (for example, 10 mm). This 10 mm interval is called the full pitch (normal pitch). The first substrates W1 in this state are held by the horizontal holding unit 23B. At this time, the pusher 25A is in a pick-up position below the support base 23A.

[0071] 4(b) shows the state when support base 23A of HVC attitude conversion unit 23 is rotated 90° by rotary drive mechanism 23D. In this way, the attitudes of 25 first substrates W1 are converted from horizontal to vertical in HVC attitude conversion unit 23. In this state, first substrates W1 are held by vertical holding unit 23C.

[0072] FIG. 4(c) shows the state in which the pusher 25A has risen from the pick-up position to a directly above position set above the pick-up position. This upward movement is performed by the lifting and rotating unit 25B. As the pusher 25A moves from below the first substrate W1 to above it, the first substrate W1, which was supported by the vertical holding unit 23C of the HVC attitude conversion unit 23, is pulled out of the vertical holding unit 23C and moves onto the pusher 25A. The upper surface of the pusher 25A is provided with grooves into which the substrate W is sandwiched. The first substrate W1 is supported in these grooves, which are arranged at equal intervals. The grooves are arranged at half pitch, and the first substrates W1 are arranged at full pitch on the HVC attitude conversion unit 23. Therefore, on the upper surface of the pusher 25A in the directly above position, grooves into which the first substrate W1 is sandwiched and empty grooves that do not support a substrate W are arranged alternately.

[0073] 4(d) shows the operation of the pusher 25A being rotated 180° by the lifting and rotating unit 25B and the operation of the support base 23A of the HVC attitude conversion unit 23 being rotated 90° in the reverse direction by the rotation drive mechanism 23D. In this state, the HVC attitude conversion unit 23 is able to support the second substrate W2. When the pusher 25A rotates 180°, the substrate W supported at the right end of the pusher 25A moves to the left end of the pusher 25A, and the empty groove located at the left end of the pusher 25A moves to the right end of the pusher 25A. The positional relationship between the HVC attitude conversion unit 23 and the pusher 25A is set so that the substrate W located at the right end of the HVC attitude conversion unit 23 is transferred to the right end of the pusher 25A. Therefore, the HVC attitude conversion unit 23 can transfer the second substrate W2 at the right end to the groove at the right end of the pusher 25A regardless of the presence of the first substrate W1 supported by the pusher 25A. The same applies to the other second substrates W2 supported by the HVC attitude conversion unit 23. That is, the second substrates W2 arranged at full pitch intervals on the HVC attitude conversion unit 23 can be arranged at full pitch intervals starting from the right end of the pusher 25A. This is because, after rotation, the pusher 25A has empty grooves arranged at full pitch intervals starting from the right end. At this time, the first substrate W1 on the pusher 25A fits into the gaps between the second substrates arranged on the pusher 25A. FIG. 4(d) shows the state when the second substrate W2 has already been transported to the HVC attitude conversion unit 23. Note that in FIG. 4(d), the second substrate W2 is supported by the horizontal holding unit 23B.

[0074] When the pusher 25A, which is in the directly above position in the state of FIG. 4(d), returns to the original pick-up position, the HVC attitude conversion unit 23 can rotate the support base 23A by 90 degrees again.

[0075] FIG. 4(e) shows the state when the support table 23A is actually rotated again. At this time, the pusher 25A has been rotated 180°. Therefore, when the pusher 25A is again moved to the directly above position as shown in FIG. 4(f), the second substrate W2 fits into the empty groove between the first substrates W1 on the upper surface of the pusher 25A without interfering with the first substrate W1. In this way, a lot is formed in which the first substrates W1 and the second substrates W2 are alternately arranged. Note that in FIG. 4(e), the second substrate W2 is supported by the vertical holding portion 23C. Since the lot is formed by arranging the substrates W face-to-face, the device surfaces of the first substrates W1 constituting the lot all face right in FIG. 4(f), and the device surfaces of the second substrates W2 all face left in FIG. 4(f).

[0076] 4(f) shows the state when the pusher 25A has moved again to the directly above position. Then, the lot generated by the pusher 25A is transported leftward (Y direction) by the horizontal moving part 25C and moved to the substrate transfer position PP.

[0077] In the following description, the configuration of the substrate arrangement to be processed does not matter. That is, the essential parts of the present invention have the same configuration whether it is a normal lot (for example, 25 substrates W arranged at full pitch) or the above-mentioned batch lot. In the following description, the processing object will be simply referred to as a lot or multiple substrates W.

[0078] Dry lot support section 33 is provided mainly for the purpose of temporarily holding lots that have been batch assembled by HVC attitude conversion section 23 and pusher mechanism 25, and is located between substrate transfer position PP and relay device 6, which will be described later. When transporting a lot from dry lot support section 33 to batch substrate processing block 7, a second substrate transport mechanism WTR provided in batch processing device 1 is used.

[0079] <5. Batch processing device: Batch processing block> The batch processing block 7 performs batch processing on the above-mentioned lots. The batch processing block 7 is divided into a batch processing region R1, which is arranged in the width direction (Y direction), and a batch transport region R2. Each region extends in the front-to-rear direction (X direction). More specifically, the batch processing region R1 is located inside the batch processing block 7. The batch transport region R2 is adjacent to the batch processing region R1 and is located at the leftmost side of the batch processing block 7.

[0080] <5.1. Batch Processing Area> The batch processing area R1 in the batch processing block 7 is a rectangular area extending in the front-to-rear direction (X direction). One end (front side) of the batch processing area R1 is adjacent to the relay device 6. The other end (rear side) of the batch processing area R1 extends away from the transfer block 5 and the relay device 6. Therefore, the relay device 6 is a device inserted at a position that separates the batch processing device 1 from the middle. When transporting a lot from the batch processing device 1 to the relay device 6, the second substrate transport mechanism WTR of the batch processing device 1 is used. Therefore, the batch transfer area R2, which is the area in which the second substrate transport mechanism WTR can move, is not separated by the relay device 6 but extends in the Y direction along the left end of the relay device 6. The relay device 6 is configured to be fitted inside the batch processing device 1, but does not reach the left end of the batch processing device 1. This is because the batch transfer area R2 is provided at the left end of the batch processing device 1.

[0081] The batch processing region R1 is equipped with a batch processing section that mainly performs batch processing. Specifically, the batch processing region R1 includes a batch drying chamber DC that dries multiple substrates W in a batch, and multiple batch processing units BPU1 to BPU6 that immerse multiple substrates W in a batch, arranged in the direction in which the batch processing region R1 extends. The arrangement of the batch drying chamber DC and the batch processing units BPU1 to BPU6 will be described in detail below. The batch drying chamber DC is adjacent to the relay device 6 from the rear. The first batch processing unit BPU1 is adjacent to the batch drying chamber DC from the rear. The second batch processing unit BPU2 is adjacent to the first batch processing unit BPU1 from the rear. The third batch processing unit BPU3 is adjacent to the second batch processing unit BPU2 from the rear. The fourth batch processing unit BPU4 is adjacent to the third batch processing unit BPU3 from the rear. The fifth batch processing unit BPU5 is adjacent to the fourth batch processing unit BPU4 from the rear. The sixth batch processing unit BPU6 is adjacent to the rear of the fifth batch processing unit BPU5. Therefore, the batch drying chamber DC, first batch processing unit BPU1, second batch processing unit BPU2, third batch processing unit BPU3, fourth batch processing unit BPU4, fifth batch processing unit BPU5, and sixth batch processing unit BPU6 are arranged in this order, moving further away from the relay device 6. For convenience of illustration, the second batch processing unit BPU2 to the fifth batch processing unit BPU5 are omitted in FIG. 1. This configuration can be understood by referring to FIG. 2. The batch processing units BPU1 to BPU6 correspond to the batch processing tanks of the present invention.

[0082] Specifically, the second batch processing unit BPU2 includes a batch chemical processing bath CHB2 that performs chemical processing on the lot collectively, and a lifter LF2 that raises and lowers the lot between a substrate transfer position and a chemical processing position (see FIG. 2). The substrate transfer position is a position set above the batch chemical processing bath CHB2 that is accessible by the second substrate transport mechanism WTR, and the chemical processing position is a position set within the batch chemical processing bath CHB2 where the lot can be immersed in the chemical. The batch chemical processing bath CHB2 performs acid processing on the lot. The acid processing may be phosphoric acid processing, but may also be processing using other acids. The phosphoric acid processing is performed by etching the multiple substrates W that make up the lot. The etching processing, for example, chemically etches the nitride film on the surface of the substrate W.

[0083] The batch chemical processing tank CHB2 contains an acid solution such as a phosphoric acid solution. A lifter LF2 is attached to the batch chemical processing tank CHB2 to move the lot up and down. The batch chemical processing tank CHB2 supplies the chemical solution from below upward, for example, to create a convection current of the chemical solution. The lifter LF2 moves up and down in the vertical direction (Z direction). Specifically, the lifter LF2 moves up and down between a processing position inside the batch chemical processing tank CHB2 and a transfer position above the batch chemical processing tank CHB2. The lifter LF2 holds a lot composed of substrates W in a vertical position. At the transfer position, the lifter LF2 transfers the lot to and from the second substrate transport mechanism WTR. When the lifter LF2 moves down from the transfer position to the processing position while holding the lot, the entire substrate W is below the surface of the chemical solution. When the lifter LF2 moves up from the processing position to the transfer position while holding the lot, the entire substrate W is above the surface of the chemical solution.

[0084] Specifically, the third batch processing unit BPU3 includes a batch chemical processing tank CHB3 and a lifter LF3 that raises and lowers the lot between the substrate transfer position and the chemical processing position. The batch chemical processing tank CHB3 has the same configuration as the batch chemical processing tank CHB2 described above. That is, the batch chemical processing tank CHB3 contains the chemical solution described above and is equipped with a lifter LF3. The batch chemical processing tank CHB3 performs the same processing on the lot as the batch chemical processing tank CHB2. The batch processing apparatus 1 of this example includes multiple processing tanks capable of the same chemical processing. This is because phosphoric acid processing takes longer than other processes. Phosphoric acid processing takes a long time (e.g., 60 minutes). Therefore, the apparatus of this example is designed to perform acid processing in parallel using multiple batch chemical processing tanks.

[0085] The fourth batch processing unit BPU4 to the sixth batch processing unit BPU6 have the same configuration as the second batch processing unit BPU2 and the third batch processing unit BPU3. Specifically, the fourth batch processing unit BPU4 includes a batch chemical processing bath CHB4 and a lifter LF4 that raises and lowers the lot between the substrate transfer position and the chemical processing position. Similarly, the fifth batch processing unit BPU5 includes a batch chemical processing bath CHB5 and a lifter LF5 that raises and lowers the lot between the substrate transfer position and the chemical processing position. The sixth batch processing unit BPU6 includes a batch chemical processing bath CHB6 and a lifter LF6 that raises and lowers the lot between the substrate transfer position and the chemical processing position. Therefore, the lot is acid-treated in one of the batch chemical processing baths CHB2 to CHB6. Performing chemical processing in parallel in five processing units in this manner increases the throughput of the apparatus.

[0086] Specifically, the first batch processing unit BPU1 includes a batch rinse processing bath ONB containing a rinse liquid and a lifter LF1 for raising and lowering the lot between a substrate transfer position and a rinse position. The substrate transfer position is a position above the batch rinse processing bath ONB accessible to the second substrate transport mechanism WTR, and the rinse position is a position within the batch rinse processing bath ONB where the lot can be immersed in the rinse liquid. The batch rinse processing bath ONB has a configuration similar to the batch chemical processing bath CHB2 described above. That is, the batch rinse processing bath ONB contains a rinse liquid and is equipped with a lifter LF1. Unlike the other processing baths, the batch rinse processing bath ONB contains pure water and is provided for the purpose of cleaning the chemical liquid adhering to multiple substrates W. In the batch rinse processing bath ONB, the cleaning process is completed when the resistivity of the pure water in the bath increases to a predetermined value. The purity of the pure water contained in the batch rinse processing tank ONB is sufficient to allow batch rinse processing of substrates W.

[0087] As described above, the batch rinse processing tank ONB in ​​this embodiment is located closer to the relay device 6 than the batch chemical processing tanks CHB2 to CHB6. This configuration allows the mechanisms constituting the relay device 6 to be separated as far as possible from the batch chemical processing tanks CHB2 to CHB6, preventing the relay device 6 from being adversely affected by acids such as phosphoric acid. Furthermore, by locating the relay device 6 and the batch rinse processing tank ONB close to each other, lots that have undergone rinsing processing are transported a short distance and immediately loaded into the relay device 6. Therefore, according to the configuration of this embodiment, the transport of the substrates W can be completed quickly while maintaining the wet state of the substrates W.

[0088] The batch drying chamber DC is located between the first batch processing unit BPU1 and the relay device 6. The batch drying chamber DC has a drying chamber that accommodates a lot consisting of an array of vertically oriented substrates W. The drying chamber has an inert gas supply nozzle that supplies inert gas into the chamber and a vapor supply nozzle that supplies organic solvent vapor into the tank. The batch drying chamber DC first supplies inert gas to the lot supported in the chamber, replacing the atmosphere in the chamber with the inert gas. Then, pressure reduction within the chamber begins. While the chamber is under reduced pressure, organic solvent vapor is supplied into the chamber. The organic solvent is discharged outside the chamber along with moisture adhering to the substrates W. In this manner, the batch drying chamber DC dries the lot. The inert gas may be, for example, nitrogen, and the organic solvent may be, for example, IPA (isopropyl alcohol).

[0089] <5.2. Bulk transport area> The batch transfer area R2 in the batch processing block 7 is a rectangular area extending in the front-to-back direction (X direction). The batch transfer area R2 is provided along the outer edge of the batch processing area R1, with one end extending to the transfer block 5 and the other end extending in a direction away from the transfer block 5. Therefore, the batch transfer area R2 is configured to also follow the relay device 6 located between the transfer block 5 and the batch processing block 7.

[0090] A second substrate transport mechanism WTR is provided in the batch transfer region R2 to transport multiple substrates W in a batch. The second substrate transport mechanism WTR transports multiple substrates W (specifically, lots) in a batch between a substrate transfer position PP defined in the transfer block 5, the drying lot support section 33, the batch drying chamber DC, each of the batch processing units BPU1 to BPU6, and a load position IP in the relay device 6 (described later). The second substrate transport mechanism WTR is configured to be able to reciprocate in the front-to-back direction (X direction) across the transfer block 5, the relay device 6, and the batch processing block 7. The second substrate transport mechanism WTR is also able to move to the substrate transfer position PP in the transfer block 5, the drying lot support section 33, and the load position IP in the relay device 6, in addition to the batch transfer region R2 in the batch processing block 7. The second substrate transport mechanism WTR corresponds to the batch transfer mechanism of the present invention.

[0091] The second substrate transport mechanism WTR is equipped with a pair of chucks 29 for transporting lots. The pair of chucks 29 can be switched between a closed state in which they are close to each other and an open state in which they are separated from each other. The chucks 29 are members extending in the Y direction and have grooves for gripping substrates W arranged at a half pitch. When the pair of chucks 29 is in the closed state, it receives multiple substrates W that make up a lot. When the pair of chucks 29 is in the open state, it transfers multiple substrates W that make up a lot to another member (such as the lifter LF1). The second substrate transport mechanism WTR transfers lots between the substrate transfer position PP and the drying lot support unit 33 in the transfer block 5, and the lifter LF65 belonging to the substrate standby tank 65 provided at the load position IP in the relay device 6. In addition, the second substrate transport mechanism WTR transfers lots between the lifters LF1 to LF6 belonging to the batch processing units BPU1 to BPU6 in the batch processing block 7 and the batch drying chamber DC.

[0092] The batch transfer region R2 is provided with guide rails 31X extending in the X direction to guide the second substrate transport mechanism WTR. The second substrate transport mechanism WTR is capable of moving forward and backward in the X direction along the guide rails 31X. Therefore, the guide rails 31X extend from the batch processing block 7 to the transfer block 5 via the relay device 6. More specifically, the guide rails 31X face the substrate transfer position PP in the transfer block 5 from the Y direction, and face the sixth batch processing unit BUP6 in the batch processing block 7 from the Y direction. In addition to these, the guide rails 31X face the drying lot support part 33 in the transfer block 5, the substrate standby tank 65 in the relay device 6, and the batch drying chambers DC and the first batch processing units BPU1 to sixth batch processing units BPU6 in the batch processing block 7 from the Y direction.

[0093] <6.Relay Device> The relay device 6 has a structure that bridges the batch processing device 1 and the single wafer processing device 2, with its left end fitting into the interior of the batch processing device 1 and its right end fitting into the interior of the single wafer processing device 2. The relay device 6 is provided with a transport path for the substrate W that extends in the Y direction connecting the batch transfer area R2 of the batch processing device 1 to the single wafer transfer area R3 of the single wafer processing device 2. The transport path is configured to transport the substrate W in the Y direction (horizontally) without changing the position of the substrate W in the Z direction. Therefore, the insertion position of the relay device 6 in the batch processing device 1 and the insertion position of the relay device 6 in the single wafer processing device 2 are the same in the Z direction.

[0094] The relay device 6 is located on the middle floor of the batch processing device 1 and the single wafer processing device 2 (see FIG. 12). Therefore, the relay device 6 bridges the batch processing device 1 and the single wafer processing device 2 at a position in the air away from the floor surface on which the batch processing device 1 and the single wafer processing device 2 are installed. The specific location of the relay device 6 is related to the structure of the single wafer processing device 2, and will be described in detail together with the explanation of the single wafer processing device 2.

[0095] The relay device 6 includes a relay housing 6A that connects a first housing 1A for the batch processing device 1 and a second housing 2A for the single wafer processing device 2, which are spaced apart from each other in the Y direction. The relay housing 6A is provided between a third wall surface 1B, which is one of the walls constituting the first housing 1A and faces the second housing 2A, and a fourth wall surface 2B, which is one of the walls constituting the second housing 2A and faces the third wall surface 1B. The third wall surface corresponds to the orthogonal wall surface of the present invention. The fourth wall surface corresponds to the orthogonal wall surface of the present invention.

[0096] The relay housing 6A has side walls 62a, a bottom plate 62b, and a top plate 62c that connect the batch processing device 1 and the single wafer processing device 2. The configurations of the side walls 62a, the bottom plate 62b, and the top plate 62c are shown in detail in FIGS. 2 and 12. The relay housing 6A connects the housings of the batch processing device 1 and the single wafer processing device 2 to form a single substrate processing system. This isolates the outside air from the atmosphere inside the device. The relay housing 6A extends from the first shutter S1 to the second shutter S2. Therefore, when the first shutter S1 is closed, the batch processing device 1 is isolated from the space to the right of the first shutter S1 in the relay device 6. The first shutter corresponds to the batch processing device-side shutter of the present invention. The second shutter corresponds to the single wafer processing device-side shutter of the present invention.

[0097] The relay device 6 includes a substrate standby tank 65 for holding batch-processed lots in pure water; an underwater attitude conversion unit 55 for receiving multiple substrates W arranged in the Y direction and rotating the received substrates W 90° in water to convert the orientation of the multiple substrates W from vertical to horizontal; a first belt conveyor mechanism 67 for transporting the substrates W one by one in the Y direction; and a second belt conveyor mechanism 68 for transporting the substrates W transported by the first belt conveyor mechanism 67 in the Y direction and sending them to an unloading position OP. The substrate standby tank 65, underwater attitude conversion unit 55, first belt conveyor mechanism 67, and second belt conveyor mechanism 68 are arranged in this order, starting from the left side of the batch processing device 1 and moving to the right. Each unit will be described in detail below. The underwater attitude conversion unit 55 corresponds to the second attitude conversion mechanism of the present invention. The first belt conveyor mechanism 67 and the second belt conveyor mechanism correspond to the relay transport mechanism of the present invention.

[0098] <6.1. Relay device: Substrate standby tank> The substrate standby tank 65 has a configuration similar to that of the first batch processing unit BPU1 of the batch processing apparatus 1. That is, the substrate standby tank 65 holds pure water and has a lifter LF65 that raises and lowers lots. The lifter LF65 can move back and forth between a load position IP for loading the lots into the relay device 6 and an immersion position for immersing the loaded lots in pure water. The load position IP is located above the immersion position and is a position where the second substrate transport mechanism WTR can transport substrates. At the load position IP, the entire area of ​​the substrates W that make up the lot is in the air, and at the immersion position, the entire area of ​​the substrates W that make up the lot is immersed in pure water.

[0099] <6.2. Relay device: Full-pitch array substrate transport mechanism> The full-pitch array substrate transport mechanism STR is capable of transporting 25 substrates arranged at a full pitch between the substrate standby tank 65 and the submersible position change unit 55. The substrate standby tank 65 holds 50 substrates arranged at a half pitch, and the full-pitch array substrate transport mechanism STR picks up half of these substrates (25) and transports them to the submersible position change unit 55. The full-pitch array substrate transport mechanism STR has a pair of chucks 30 similar to the pair of chucks 29 in the second substrate transport mechanism WTR. Like the chucks 29, the chucks 30 have grooves formed at half-pitch intervals, but differ from the chucks 29 in that the two types of grooves are arranged alternately. That is, the chucks 30 have deep grooves that cannot hold substrates and shallow grooves that can hold substrates, arranged alternately at half-pitch intervals. Therefore, when the full pitch array substrate transport mechanism STR attempts to grip a lot on the lifter LF65, 25 substrates W are picked up by shallow grooves that can grip the substrates W, while the remaining 25 substrates cannot abut the deep grooves and are left on the lifter LF65. Because the shallow grooves in the chuck 30 are arranged at a pitch (full pitch) that is twice the half pitch, the full pitch array substrate transport mechanism STR picks up the 25 substrates W arranged at full pitch from the lot on the lifter LF65. Since the lot is configured with the substrates W arranged face-to-face, the picked-up substrates W are arranged so that their front surfaces (device surfaces) are on the right and their back surfaces are on the left, so that the device surfaces of adjacent substrates W do not face each other. On the other hand, the 25 substrates W that were not picked up and remain on the lifter LF65 are arranged so that their front surfaces (device surfaces) are on the left and their back surfaces are on the right, so that the device surfaces of adjacent substrates W do not face each other.

[0100] The pair of chucks 30 of the full pitch array substrate transport mechanism STR, like the chucks 29 of the second substrate transport mechanism WTR, can be in two states: a closed state in which the chucks 30 are close to each other in the X direction, and an open state in which the chucks 30 are farther apart in the X direction. When the pair of chucks 30 are in the closed state, the chucks 30 are close enough to each other relative to the diameter of the substrate W, so that two points on the lower part of the substrate W abut against each of the chucks 30. In this way, the substrate W is gripped by the pair of chucks 30. When the pair of chucks 30 in the closed state are opened, the chucks 30 are farther apart relative to the diameter of the substrate W, so that the substrate W is detached from the chucks 30. Specifically, the pair of chucks 30 are in the open state before receiving multiple substrates W from the lifter LF65 at the loading position IP and after delivering multiple substrates W to a pusher 55A (described later) at a position above the immersion tank (described later).

[0101] The relay device 6 is provided with guide rails 31Y extending in the Y direction to guide the full pitch array substrate transport mechanism STR. The full pitch array substrate transport mechanism STR is capable of moving forward and backward in the Y direction along the guide rails 31Y. Therefore, the guide rails 31Y extend from the substrate standby tank 65 to the underwater posture change unit 55.

[0102] The full pitch array substrate transport mechanism STR is guided by guide rails 31Y and can move forward and backward in the Y direction from a load position IP, which is a position where the lifter LF65 transfers the lot, to a position above the immersion tank where a pusher 55A (described later) of the submersible position change unit 55 receives multiple substrates W. This allows the full pitch array substrate transport mechanism STR to transport multiple substrates W in the Y direction from the load position IP to a position above the immersion tank. In addition, the full pitch array substrate transport mechanism STR can also avoid interfering with the second substrate transport mechanism WTR by moving to a position above the immersion tank when the second substrate transport mechanism WTR moves from the transfer block 5 to the batch processing block 7 (see FIG. 2).

[0103] <6.3. Repeater: Underwater converter> The submersible position change unit 55 has an immersion tank 73 that holds pure water, a pusher 55A located on the bottom of the immersion tank 73, and an intra-tank carrier 71 that is immersed in the immersion tank 73. The pusher 55A can move up and down from a substrate transfer position with the full-pitch array substrate transport mechanism STR that is set above the liquid surface of the immersion tank 73 to the bottom of the immersion tank 73. The intra-tank carrier 71 can receive multiple substrates W supported by the pusher 55A and rotate 90° in one direction or the other while in this state. The positions of the multiple substrates W that are in a vertical position are changed to a horizontal position by the rotation of the intra-tank carrier 71.

[0104] <6.4. Relay device: Belt conveyor mechanism> The first belt conveyor mechanism 67 is a substrate transport mechanism elongated in the Y direction with one end extending to the underwater position change unit 55 and the other end extending to the single-wafer processing apparatus 2. The first belt conveyor mechanism 67 receives the horizontally oriented substrates W one by one from the underwater position change unit 55 and transports the substrates W to the single-wafer processing apparatus 2. The second belt conveyor mechanism 68 is a substrate transport mechanism elongated in the Y direction with one end extending to the other end of the first belt conveyor mechanism 67 and the other end extending to an unloading position OP of the relay apparatus 6. The second belt conveyor mechanism 68 receives the horizontally oriented substrates W transported by the first belt conveyor mechanism 67 one by one and transports the substrates W to an unloading position OP set at an end of the relay apparatus 6. The first belt conveyor mechanism corresponds to the relay transport mechanism of the present invention.

[0105] The first belt conveyor mechanism 67 and the second belt conveyor mechanism 68 cooperate to form a substrate transport mechanism that transports the substrate W from the underwater posture change unit 55 to the unloading position OP. Therefore, the substrate transport mechanism is composed of multiple belt conveyor mechanisms. A sidewall constituting the second housing 2A of the single-wafer processing apparatus 2 is located where the first belt conveyor mechanism 67 and the second belt conveyor mechanism 68 face each other. Therefore, by providing a plate-like member between the first belt conveyor mechanism 67 and the second belt conveyor mechanism 68, the single-wafer processing apparatus 2 can be separated from the batch processing apparatus 1. This separation of the apparatus is achieved by a second shutter S2 provided between the first belt conveyor mechanism 67 and the second belt conveyor mechanism 68. Having the single-wafer processing apparatus 2 separated from the batch processing apparatus 1 is advantageous when substrate processing can be completed solely by the single-wafer processing apparatus 2 without using the batch processing apparatus 1. In this embodiment, the basic configuration is that the batch-processed substrates W are transported by the batch processing device 1 to the single-wafer processing device 2 and processed there, so the following explanation will be given assuming that the second shutter S2 is in an open state.

[0106] Additionally, the relay apparatus 6 has a plurality of shower heads 69 arranged along the first belt conveyor mechanism 67. The shower heads 69 are configured to spray pure water, the purity of which is approximately the same as that of the pure water held in the immersion tank 73, onto the substrates being transported. The side walls 62a, bottom plate 62b, and top plate 62c that constitute the relay housing 6A are configured to surround the first belt conveyor mechanism 67, which is provided at a position that bridges the batch processing apparatus 1 and the single wafer processing apparatus 2. The shower heads 69 are connected via piping to a pure water supply device that supplies pure water. The pure water supply device may be located outside or inside the relay apparatus 6. The shower heads 69 correspond to the liquid supply unit of the present invention.

[0107] <6.5. Operation of relay device> The manner in which the relay device 6 transports a substrate W at the loading position IP to the unloading position OP will be described. Fig. 5(a) shows the lifter LF65 holding multiple substrates W at the loading position IP set above the substrate standby tank 65. The second substrate transport mechanism WTR transports the substrates to the loading position IP. The multiple substrates W placed on the lifter LF65 are arranged face-to-face, with substrates W whose device surfaces face right and substrates W whose device surfaces face left alternately.

[0108] 5(b) shows the state when the lifter LF65 subsequently descends from the loading position IP to the immersion position. In this way, the relay device 6 can prevent the substrates waiting to be transported from drying out while the substrates W picked up at the loading position IP are being transported one by one.

[0109] 6(a) shows how a plurality of substrates W are then handed over in a lump from the lifter LF65 to the full pitch array substrate transport mechanism STR to be transported to the underwater posture conversion unit 55. At this time, the lifter LF65 supports the plurality of substrates W at the loading position IP, and the full pitch array substrate transport mechanism STR moves the pair of chucks 30 to positions where they can hold the lot, and closes the chucks 30. At this time, as described above, the chucks 30 can only hold half of the plurality of substrates W arranged at half pitch that make up the lot. Ultimately, the lot is arranged in such a way that substrates W held by the chucks 30 and substrates W not held by the chucks 30 are alternately arranged.

[0110] Figure 6(b) shows the state when the lifter LF65 is subsequently lowered from the carry-in position IP to the immersion position. When the lifter LF65 is lowered from the state shown in Figure 6(a), the multiple substrates W arranged at full pitch, which correspond to half of the substrates W constituting the lot, remain in the full-pitch arrayed substrate transport mechanism STR, and the remaining half of the substrates are returned to the substrate standby tank 65 in a full-pitch arrayed state on the lifter LF65. The multiple substrates W remaining in the full-pitch arrayed substrate transport mechanism STR have their device surfaces facing right, and the multiple substrates W held at the immersion position by the lifter LF65 have their device surfaces facing left.

[0111] Figure 7(a) shows the state when the full pitch array substrate transport mechanism STR subsequently moves from the loading position IP to the submersible position change unit 55, which is located further downstream in the substrate transport direction. When the pusher 55A of the submersible position change unit 55 is raised in this state, the pusher 55A is positioned above the immersion tank 73 in the submersible position change unit 55, as shown in Figure 7(a). The pusher 55A can then receive multiple substrates W arranged at full pitch all at once from the full pitch array substrate transport mechanism STR. The raising and lowering operation of the pusher 55A is achieved by a pusher mechanism.

[0112] FIG. 7(b) shows the state after that when the pair of chucks 30 in the full pitch array substrate transport mechanism STR are opened and separated from the pusher 55A. In this figure, the pusher 55A has returned to the bottom of the immersion tank 73. Even in this state, the multiple substrates W held by the pusher 55A do not reach the bottom of the immersion tank 73. This is because the intra-tank carrier 71 is waiting inside the immersion tank 73. The intra-tank carrier 71 is capable of holding multiple substrates W arranged at full pitch intervals. Therefore, when the pusher 55A, which is positioned in the air, is lowered, the multiple substrates W held by the pusher 55A are transferred to the intra-tank carrier 71, which is positioned above the bottom of the immersion tank 73. The intra-tank carrier 71 is in a predetermined immersion position in the immersion tank 73, where multiple substrates can be immersed in liquid.

[0113] The intra-tank carrier 71 can rotate counterclockwise while holding multiple substrates W. The rotation axis at this time extends in the X direction, and the rotation angle is 90°. The rotation of the intra-tank carrier 71 is achieved by an intra-tank carrier counterclockwise rotation mechanism 57A. The multiple substrates W are rotated below the liquid surface of the immersion tank 73. Therefore, the multiple substrates W remain immersed in the immersion tank 73 even during rotation.

[0114] Fig. 7(c) shows the state after the left rotation of the intravessel carrier 71 is completed. When the intravessel carrier 71 is rotated 90° left, the multiple substrates W held by the intravessel carrier 71 also rotate 90° left accordingly. Then, as shown in Fig. 7(c), the orientation of the multiple substrates W held by the intravessel carrier 71 is changed from a vertical orientation to a horizontal orientation. Then, the multiple substrates W whose device surfaces were facing to the right now face upward as a result of the orientation change.

[0115] The counterclockwise rotated intravessel carrier 71 can move up and down while holding multiple substrates W. The intravessel carrier 71 is moved up and down by the intravessel carrier lifting mechanism 57B. When the intravessel carrier 71 is lifted from its immersed position in the immersion bath 73, the multiple horizontally oriented substrates W stacked vertically rise accordingly. This embodiment is configured to transport horizontally oriented substrates one by one to the single-wafer processing apparatus 2, so the intravessel carrier lifting mechanism 57B moves the single substrate W located at the top of the intravessel carrier 71 above the liquid surface of the immersion bath 73 to achieve this operation. Since the intravessel carrier 71 is configured to hold 25 substrates W arranged at full pitch, the remaining 24 substrates W held in the intravessel carrier 71 are all below the liquid surface of the immersion bath 73. In this manner, the relay device 6 can prevent substrates waiting to be transported from drying out while the substrates W held in the intravessel carrier 71 are transported one by one.

[0116] 7(d) shows the state after the lifting operation of the intravessel carrier 71 has finished. The intravessel carrier shift mechanism 57C moves the intravessel carrier 71 in the Y direction while positioning the uppermost substrate W of the multiple substrates W it holds above the liquid surface of the immersion bath 73. In this way, the intravessel carrier 71 approaches the right end of the immersion bath 73, making it easier to transport the uppermost substrate W into the first belt conveyor mechanism 67, which will be described later.

[0117] FIG. 8(a) shows the state after the shifting operation of the intra-tank carrier 71 is completed. The substrate shift mechanism 57D is movable back and forth in the Y direction and has multiple tabs at its tip that can grip a substrate W. In the initial state, the substrate shift mechanism 57D has its tip positioned to the left of the left end of the immersion tank 73 so as not to interfere with the pusher 55A located on the bottom of the immersion tank 73. When the intra-tank carrier 71 is positioned at the right end of the immersion tank 73 as shown in FIG. 8(a), the substrate shift mechanism 57D extends rightward from its initial position and grips the uppermost substrate W, the only one held in midair, among the substrates W held by the intra-tank carrier 71. From this state, the substrate shift mechanism 57D extends further rightward and sends the substrate W to the first belt conveyor mechanism 67. The substrate shift mechanism 57D finishes gripping the substrate W and returns to its initial position. Therefore, the substrate W held by the substrate shift mechanism 57D is placed on the first belt conveyor mechanism 67. Such operation of the substrate shift mechanism 57D is realized by the substrate shift mechanism control unit 57E. The substrate shift mechanism corresponds to the single-substrate shift mechanism of the present invention.

[0118] The first belt conveyor mechanism 67 extends in the Y direction from the immersion tank 73 to the second belt conveyor mechanism 68 and is capable of transporting a horizontally oriented substrate W in the Y direction from left to right. The first belt conveyor mechanism 67 has a plurality of rollers 67A extending in the X direction and a belt 67B supported by the rollers 67A. The belt 67B passes through the upper layer of the roller group, is guided by the most distal roller 67A located on the right side, and can then wrap around to the lower layer of the roller group. After passing through the lower layer of the roller group, the belt 67B is then guided by the most proximal roller 67A located on the left side, and can then wrap around to the upper layer of the roller group again.

[0119] FIG. 8(b) shows a state in which the substrate W in a horizontal position has been transported to the tip of the first belt conveyor mechanism 67 by the first belt conveyor mechanism 67. The first belt conveyor mechanism 67 has two belts: a belt 67B that supports one end of the substrate W, and a belt 67B that supports the other end of the substrate W. The substrate W is transported to the right by the two belts that move in the same direction at the same speed, and is then transported further to the right by the second belt conveyor mechanism 68. This transportation of the substrate W is performed by a first motor 67C rotating a roller 67A. The first motor 67C drives at least one of the rollers 67A that constitute the first belt conveyor mechanism 67, thereby operating the belt 67B. The substrate processing system of this example may be configured to include one first motor 67C that drives one or more rollers 67A collectively, or may be configured to include multiple first motors 67C that drive multiple rollers 67A individually.

[0120] The second belt conveyor mechanism 68 has a configuration similar to that of the first belt conveyor mechanism 67. That is, the second belt conveyor mechanism 68 extends in the Y direction from the right end of the first belt conveyor mechanism 67 to an unloading position OP defined within the single-wafer processing apparatus 2, and is capable of transporting a horizontally oriented substrate W from left to right in the Y direction. The second belt conveyor mechanism 68 is similar to the first belt conveyor mechanism 67 in that it includes a plurality of rollers 68A extending in the X direction, two belts 68B that support both ends of the substrate W, the movement of the belts 68B relative to the roller groups, and the two belts moving in the same direction at the same speed. The transport of the substrate W by the second belt conveyor mechanism 68 is performed by one or more second motors 68C driving one or more rollers 67A, similar to the first motor 67C of the first belt conveyor mechanism 67.

[0121] The lift pins 70 provided at the unloading position OP set in the relay device 6 will now be described. At the unloading position OP of the relay device 6, a plurality of lift pins 70 are provided in the gap between the two belts of the second belt conveyor mechanism 68. These three lift pins 70 extend in the Z direction and are able to freely protrude and retract from the bottom plate 62b of the relay device 6. When the lift pins 70 are in a contracted state, the tips of the lift pins 70 are located below the substrate W being transported by the second belt conveyor mechanism 68, as shown in FIG. 8(c1). When the lift pins 70 are in an extended state, the tips of the lift pins 70 support the substrate W being transported by the second belt conveyor mechanism 68 from below, as shown in FIG. 8(c2), and transport the substrate W to the unloading position OP set above the second belt conveyor mechanism 68. The rising and falling movements of the lift pins 70 are synchronized among the multiple lift pins 70, so that the substrate W located at the right end of the second belt conveyor mechanism 68 is raised while maintaining a horizontal posture. Such movement of the lift pins 70 is achieved by a lift pin raising and lowering mechanism 70A. The number of lift pins 70 is three because it is necessary to maintain the horizontal posture of the substrate W. In an embodiment, a configuration having four or more lift pins 70 may be used.

[0122] 8(c2) shows the state when the substrate W has been moved to the unloading position OP by the lift pins 70. The unloading position OP of the relay device 6 is defined as being above the right end of the second belt conveyor mechanism 68. The substrate W sent out from the first belt conveyor mechanism 67 is moved in the Y direction by the second belt conveyor mechanism 68, and then moved in the Z direction by the three lift pins 70 to reach the unloading position OP.

[0123] When the lift pins 70 lift the substrate W to the unloading position OP, the second belt conveyor mechanism 68 is stopped. That is, the second belt conveyor mechanism 68 is configured to transport the substrate W received from the first belt conveyor mechanism 67 to a predetermined position directly below the unloading position OP and stop it there, and the lift pins 70 are configured to lift the substrate W at the predetermined position to the unloading position OP and stop it there. With this configuration, the substrate W can be reliably supported by the lift pins 70.

[0124] The substrate W sent to the unloading position OP is gripped by the center robot CR in the single wafer processing apparatus 2 and transported to the single wafer processing chamber. In this way, the substrate W at the unloading position OP is immediately transported to the single wafer processing chamber without remaining there for a long time. The unloading position OP becomes empty and is able to receive the subsequent substrate W. The center robot corresponds to the single wafer transport mechanism of the present invention.

[0125] The above has described how the first substrate W of the substrates W constituting a lot is transported by the relay device 6. That is, when the substrates W are transported in order from Figure 5(a) to Figure 8(c2), 25 substrates W in a vertical position in the substrate standby tank 65 are immersed in pure water, and 24 substrates W in a horizontal position in the immersion tank 73 of the submersible position changing unit 55 are immersed in pure water. A method for transporting the remaining 49 substrates W will now be described.

[0126] The transportation of the remaining substrates W can be achieved by combining most of the above-described methods of transporting substrates W. That is, the 24 substrates W remaining in the horizontal position in the immersion bath 73 of the submersible position change unit 55 are transferred one by one to the first belt conveyor mechanism 67 by the substrate shift mechanism 57D, as shown in FIG. 9(a). Of the horizontally oriented substrates W arranged in the intra-tank carrier 71, the uppermost substrate W is the substrate W to be transported by the substrate shift mechanism 57D. In this embodiment, the intra-tank carrier 71 is gradually unwound from the immersion bath 73, while the substrate shift mechanism 57D transports the substrates W to the first belt conveyor mechanism 67. In this manner, the transportation of the remaining 24 substrates can be completed while only the substrates W to be transported wait on the liquid surface and the other substrates W are immersed in pure water.

[0127] Next, a method for transporting the 25 substrates remaining in the substrate standby tank 65 will be described. These remaining substrates W are also transported to the submersible posture change unit 55 by the full-pitch array substrate transport mechanism STR described above. Figure 9(b) shows the state when the lifter LF65 rises to the loading position IP to transfer the 25 substrates W to the full-pitch array substrate transport mechanism STR. This figure corresponds to Figure 6(a) described above. In Figure 9(b), the full-pitch array substrate transport mechanism STR is shifted to the right by a half pitch compared to the case of Figure 6(a). This arrangement allows the positions of the shallow grooves formed in the chucks 30 to coincide with the positions of the 25 substrates W remaining on the lifter LF65, and the 25 substrates W are gripped by the pair of chucks 30. Shifting the full-pitch array substrate transport mechanism STR by a half pitch is necessary to enable the full-pitch array substrate transport mechanism STR to grip the 25 substrates W that were not gripped in Figure 6(a). After transferring the substrate to the full pitch array substrate transport mechanism STR, the lifter LF65 retreats to the immersion position in the substrate standby tank 65 (see FIG. 9(c)). The substrate standby tank corresponds to the standby tank of the present invention.

[0128] Figure 10(a) shows the state when the full pitch arrayed substrate transport mechanism STR subsequently moves to the submersible position change unit 55. When the pusher 55A of the submersible position change unit 55 is raised in this state, as shown in Figure 10(a), the pusher 55A can receive the multiple substrates W arranged at full pitch all at once on the spot from the full pitch arrayed substrate transport mechanism STR.

[0129] Figure 10(b) shows the state after the full pitch array substrate transport mechanism STR has subsequently separated from the pusher 55A. At this time, the pusher 55A rotates 180° around the support column supporting the pusher 55A as the rotation axis, as shown in Figure 10(b). Given that multiple substrates W were arranged on the pusher 55A before the rotation with their device surfaces facing left, multiple substrates W will be arranged on the pusher 55A after the rotation with their device surfaces facing right (see Figure 10(c)).

[0130] The state in Figure 10(c) is the same as that in Figure 7(a) described above. Therefore, the multiple substrates W shown in Figure 10(c) are transported one by one from the immersion tank 73 to the first belt conveyor mechanism 67 in the same manner as described in Figures 7(a) to 9(a).

[0131] In this way, the substrate processing system of this embodiment is configured so that the device surfaces of all substrates W unloaded to the unloading position OP are facing upward by appropriately rotating the pusher 55A for a lot in which substrates W are arranged face-to-face. Specifically, a substrate W whose device surface faces left is rotated 180° so that its device surface faces right. A plurality of substrates W whose device surfaces face right are rotated 90° left to assume a horizontal position with their device surfaces facing upward.

[0132] <6.6.Relay Device: Shutter> Next, we will explain the first shutter S1, second shutter S2, and third shutter S3 provided in the relay device 6. When closed, the first shutter S1 and second shutter S2 are configured to be perpendicular to the Y direction and block the substrate transport path of the relay device 6, and the third shutter S3 is configured to block the path from the unloading position OP to a reference position SP of the center robot CR, which will be described later.

[0133] 11(a), the first shutter S1 is provided on the loading position IP side of the relay device 6, and when in the closed state, divides the relay device 6 into a section where the first belt conveyor mechanism 67 is provided and a section where the underwater attitude change unit 55 located upstream of the first belt conveyor mechanism 67 is provided. When the first shutter S1 is in the closed state, it blocks the flow of atmosphere between the sections, as shown by the arrows in FIG. 11(a). Therefore, when the first shutter S1 is in the closed state, the substrate W cannot be transported across the first shutter S1.

[0134] As shown in FIG. 11(b), the second shutter S2 is provided between the first belt conveyor mechanism 67 and the second belt conveyor mechanism 68 in the relay device 6. The second shutter S2 is located at the same position in the Y direction as the fourth wall surface 2B, which faces the batch processing device 1 and is one of the partition walls constituting the second housing 2A of the single wafer processing device 2. Therefore, when the second shutter S2 is in the closed state, the second shutter S2 closes the rectangular opening in the fourth wall surface 2B, which is provided to insert the relay device 6. The closed state of the second shutter S2 divides the relay device 6 into a section where the second belt conveyor mechanism 68 is provided and a section where the first belt conveyor mechanism 67 is provided. When the second shutter S2 is in the closed state, it blocks the flow of atmosphere between the sections, as indicated by the arrows in FIG. 11(b). Therefore, when the second shutter S2 is in the closed state, a substrate W cannot be transported across the second shutter S2.

[0135] As shown in Fig. 11(c), the third shutter S3 has a movable plate-like structure that intersects with the transport direction (Y direction) of the substrate W in the second belt conveyor mechanism 68. When the third shutter S3 is in a closed state, the relay device 6 and the single-wafer processing device 2 are separated. When the third shutter S3 is in a closed state, as shown by the arrow in Fig. 11(c), the third shutter S3 blocks the flow of atmosphere between the relay device 6 and the single-wafer processing device 2. Therefore, when the third shutter S3 is in a closed state, the substrate W cannot be transported across the third shutter S3.

[0136] The first shutter S1, second shutter S2, and third shutter S3 are open only when the substrate W is being transported. Therefore, for example, as explained in FIGS. 5 to 7, when the substrate W has not yet reached the intra-tank carrier 71, each shutter is closed. If the operation of each shutter is sufficiently fast relative to the substrate transport, each shutter can also be configured to open and close each time a substrate W is transported. Furthermore, each shutter is always closed when the substrate processing system is operated without using the relay device 6. This method of operating the substrate processing system relates to the batch mode and single wafer mode described below.

[0137] <7. Single wafer processing equipment: Indexer block> As shown in FIG. 1 , the indexer block 4 is equipped with a second load port 10 on which a carrier C is placed, which stores multiple substrates W in a horizontal position and at a predetermined interval in a vertical direction. Therefore, the second load port 10 is a mounting table for the carrier C. The second load port 10 may also be used to mount a carrier C storing multiple substrates W for which single-substrate processing has been completed. The single-substrate processing apparatus 2 of this embodiment is configured to receive batch-processed substrates W from the relay apparatus 6 without using the second load port 10, so the second load port 10 is used to mount an empty carrier C storing substrates W that have been batch-processed and single-substrate processed. Therefore, the second load port 10 is used as an outlet for substrates W in the single-substrate processing apparatus 2. The second load port 10 may also be used to mount a carrier C storing unprocessed substrates W, but this is when the second load port 10 is used as an inlet for substrates W. This mounting method relates to the single-substrate mode, which will be described later. The second load port 10 is configured to protrude from the outer wall of the indexer block 4, which extends in the width direction (Y direction). The second load port corresponds to the second carrier shelf of the present invention.

[0138] The internal structure of the indexer block 4 will now be described. The indexer block 4 is equipped with an indexer robot IR that transports horizontally oriented substrates W one by one between the carrier C and a path 24 provided on the indexer block 4 side in the single-wafer processing block 8 described below. The indexer robot IR is equipped with a hand composed of a pair of grippers that grips a horizontally oriented substrate W at its tip, and an arm that supports the hand. The arm has multiple joints, and its tip is connected to the hand and its base end is connected to a base of the arm provided in the indexer block 4. The indexer robot IR of this embodiment is configured to receive a single-wafer processed substrate W from the path 24 and store it in a second load port 10 outside the indexer block 4.

[0139] <8. Single wafer processing device: Single wafer processing block> The single wafer processing block 8 is located at the rear of the indexer block 4 when viewed from the second load port 10. The single wafer processing block 8 has, in the center in the Y direction, a path 24 accessible by the indexer robot IR, and a center robot CR that can place a processed substrate W on the path 24. The single wafer processing block 8 has a single wafer transport region R3 extending in the X direction so that the center robot CR can move back and forth between the path 24 and a reference position SP of the center robot CR that is set at a position away from the path 24 in the X direction. The center robot CR can move forward and backward in the X direction within the single wafer transport region R3.

[0140] The single wafer processing block 8 is equipped with a single wafer processing chamber 48a, a single wafer processing chamber 48b, and a single wafer processing chamber 48c that are capable of performing drying processing on substrates W that have undergone batch processing. Each single wafer processing chamber is provided in a single wafer processing region R4 that is provided on either side of the single wafer transport region R3 in the Y direction. The single wafer processing chamber 48a and the single wafer processing chamber 48b are provided in the single wafer processing region R4 to the right of the single wafer transport region R3, and the single wafer processing chamber 48c is provided in the single wafer processing region R4 to the left of the single wafer transport region R3.

[0141] A reference position SP for the center robot CR is set in the single wafer transfer region R3. The reference position SP is located away from the path 24 in the X direction. When the center robot CR is at the reference position SP, the center robot CR can access the single wafer processing chambers 48a, 48b, and 48c, as well as the unloading position OP of the relay device 6. With reference to the reference position SP, the single wafer processing chamber 48a is located to the front right, the single wafer processing chamber 48b is located to the rear right, and the single wafer processing chamber 48c is located to the rear left, with the unloading position OP of the relay device 6 set to the front left.

[0142] Each single wafer processing chamber has an opposing surface that crosses the flow path of the substrate W connecting each single wafer processing chamber and the reference position SP to facilitate access by the center robot CR from the reference position SP. A shutter is provided on each opposing surface, and by opening the shutter, an opening is formed in the opposing surface when the substrate W is transferred from the center robot CR at the reference position SP to each single wafer processing chamber. Incidentally, the relay device 6 is also provided with a third shutter S3 that crosses the flow path of the substrate W connecting the unloading position OP and the reference position SP. By opening the shutter S3, an opening is formed when the center robot CR at the reference position SP receives the substrate W at the unloading position OP.

[0143] 12 is a view of the single wafer processing block 8 as seen from the batch processing apparatus 1 side. As shown in the figure, the single wafer processing chambers are stacked in the Z direction to form a stack. For example, single wafer processing chamber 49c is located above single wafer processing chamber 48c, and single wafer processing chamber 47c is located below single wafer processing chamber 48c. Similarly, another single wafer processing chamber is located above single wafer processing chamber 48a, and another single wafer processing chamber is located below single wafer processing chamber 48a. Another single wafer processing chamber is located above single wafer processing chamber 48b, and another single wafer processing chamber is located below single wafer processing chamber 48a.

[0144] 12 also illustrates that relay device 6 is disposed in a position sandwiched between single wafer processing chambers from above and below. That is, single wafer processing chamber 49d is disposed above relay device 6, and single wafer processing chamber 47d is disposed below relay device 6.

[0145] As described above, the single wafer processing block 8 of this embodiment has a first stack of three single wafer processing chambers, including single wafer processing chamber 48a, arranged in the Z direction, a second stack of three single wafer processing chambers, including single wafer processing chamber 48b, arranged in the Z direction, and a third stack of three single wafer processing chambers, including single wafer processing chamber 48c, arranged in the Z direction. The single wafer processing block 8 of this embodiment also has two single wafer processing chambers located on either side of the relay device 6 in the Z direction. Therefore, the single wafer processing block 8 has a total of 11 single wafer processing chambers, including the nine single wafer processing chambers that make up the stack and two single wafer processing chambers located above and below the relay device 6.

[0146] 12, the shielding plate 16 is a part of the second wall surface 2B of the single wafer processing apparatus 2, and is located in a position surrounded by the relay device 6, the single wafer processing chambers 47d and 49d located above and below the relay device 6, and the indexer block 4. The shielding plate 16 is provided to cover a rectangular opening that cannot be closed by the relay device 6, which is shorter in the X direction than the single wafer processing chambers 47d and 49d. By providing the shielding plate 16 on the indexer block 4 side, the relay device 6 can be positioned on the reference position SP side of the center robot CR, so that the substrate W received from the unloading position OP can be transferred to the single wafer processing chamber without moving the center robot CR in the X direction.

[0147] The hand of the center robot CR that holds the substrate W in a horizontal position can move in the Z direction while maintaining the position of the substrate W. By configuring the center robot CR in this manner, the substrate W received from the unloading position OP can be delivered to the single wafer processing chambers located above and below the relay device 6. By providing the relay device 6 in the middle layer of the stack of single wafer processing chambers, the unloading position OP is located at the middle position of the single wafer processing block 8 in the Z direction. With this configuration, the unloading position OP is located close to both the upper and lower single wafer processing chambers, so there is no need to move the center robot CR a long distance in the Z direction when transporting the substrate, and the substrate W can be transported quickly from the unloading position OP to the single wafer processing chamber.

[0148] The center robot CR has a first hand 32a for holding the substrate W before the drying process, and a second hand 32b configured to hold the substrate W after the drying process and located above the first hand 32a.

[0149] The configuration of the single wafer processing chamber will be described. The single wafer processing chamber is capable of substrate drying processing, which dries substrates using a spin dry method. The internal structure of the single wafer processing chamber is illustrated in FIG. 1 for the single wafer processing chamber 48a. Other single wafer processing chambers have a similar configuration. The single wafer processing chamber is equipped with a spin chuck 8a that rotates a substrate W while adsorbing it. As the substrate W mounted on the spin chuck 8a is rotated before drying processing, liquid adhering to the substrate W is dispersed by centrifugal force and removed from the substrate W. In addition to substrate drying processing, the single wafer processing chamber according to this embodiment also has a chemical nozzle 8b that supplies a chemical solution to the substrate W. The chemical nozzle 8b can rotate between a standby position away from the spin chuck 8a and a supply position above the spin chuck 8a. The single wafer processing apparatus 2 in the substrate processing system according to this embodiment is configured to operate as a substrate drying apparatus. The chemical nozzle 8b relates to a modified example, which will be described later.

[0150] <9. Control Unit> The substrate processing system includes a first control unit 131 for controlling the batch processing device 1, a second control unit 132 for controlling the single wafer processing device 2, and a third control unit 136 for controlling the relay device 6. For details of each control unit, see FIG. 1. Although not shown in FIG. 1, the substrate processing system includes a corresponding memory unit for each control unit. The control units 131, 132, and 136 are configured, for example, by a CPU (Central Processing Unit). The specific configuration of each control unit is not limited, and for example, each control unit may be configured by a single processor, or each control unit may be configured by an individual processor. Furthermore, control related to the batch processing device 1 may be configured by multiple processors, and this also applies to the single wafer processing device 2 and the relay device 6.

[0151] Control related to the control unit 131 includes, for example, control of the carrier transport mechanism 11, first substrate transport mechanism HTR, first posture conversion mechanism 15, second substrate transport mechanism WTR, batch processing units BPU1-BPU6, and batch drying chamber DC. Control related to the control unit 132 includes, for example, control of the center robot CR, each single-wafer processing chamber, and indexer robot IR. Control related to the third control unit 136 includes, for example, control of the full-pitch array substrate transport mechanism STR, substrate standby tank 65, lifter LF 65, submersible posture conversion unit 55 (second posture conversion mechanism), substrate shift mechanism 57D, first belt conveyor mechanism 67, second belt conveyor mechanism 68, pure water supply device, and lift pins 70.

[0152] The storage unit stores programs and parameters related to control. The storage unit may be configured as a single device, or may be configured as individual devices corresponding to each control unit. Furthermore, the substrate processing system of this embodiment does not have any particular limitations on the configuration of the device that realizes the storage unit.

[0153] <10. Hybrid Mode> Hereinafter, the flow of substrate processing in hybrid mode will be described with reference to the flowchart in Fig. 13. The substrate processing is performed by first performing batch processing on substrates W, and then performing single-wafer processing. In this embodiment, substrates W are transported in this order through the first load port 9, stocker block 3, transfer block 5, batch processing block 7, relay device 6, single-wafer processing region R4, indexer block 4, and second load port 10, with batch processing and single-wafer processing completed during this time (see Figs. 14 and 15).

[0154] Step S11: A carrier C storing unprocessed substrates W in a vertically arranged position is placed on the first load port 9 of the batch processing apparatus 1. The carrier C is then taken into the stocker block 3 and placed on the carrier mounting shelf 13a. Before being placed on the carrier mounting shelf 13a, the carrier C may pass through the stock shelf 13b. The movement of the carrier C at this time is performed by the carrier transport mechanism 11. The first substrate transport mechanism HTR collectively removes multiple substrates W in a horizontal position from the carrier C placed on the carrier mounting shelf 13a and passes them to the HVC position conversion unit 23. The carrier mounting shelf corresponds to the first carrier mounting shelf of the present invention.

[0155] Step S12: The HVC attitude conversion unit 23 converts the attitudes of the received substrates W from a horizontal attitude to a vertical attitude all at once, and passes them to the pusher mechanism 25. The HVC attitude conversion unit 23 receives another set of substrates W from a carrier C different from the carrier C that stored the attitude-converted substrates W, from the first substrate transport mechanism HTR, and converts the attitudes of the substrates W from a horizontal attitude to a vertical attitude. The attitude-converted substrates W are also passed to the pusher mechanism 25. In this way, batch grouping is performed on the substrates W arranged at full pitch, and two carriers' worth of substrates W are arranged at half pitch on the pusher 25A. The lot generated in this way is transported by the pusher mechanism 25 to the substrate transfer position PP defined in the transfer block 5.

[0156] Step S13: The second substrate transport mechanism WTR receives the lot waiting at the substrate transfer position PP from the pusher mechanism 25 and transfers it to the lifter LF6 waiting above the batch chemical processing bath CHB6 in the sixth batch processing unit BPU6. At this time, the lot may pass through the dry lot support part 33 before being placed on the lifter LF6. The reason for transferring the lot to the lifter LF6 is to perform phosphoric acid treatment on the lot. Therefore, the lot may be transferred to any of the lifters LF2 to LF6 involved in the phosphoric acid treatment. The following description will be given assuming that the lot has been transferred to the lifter LF6.

[0157] The lifter LF6 then descends to the immersion position, and the lot is subjected to a batch-type phosphate treatment. After the phosphate treatment, the lifter LF6 returns the lot to the space above the batch chemical treatment bath CHB6 and hands it over to the second substrate transport mechanism WTR. The second substrate transport mechanism WTR hands it over to the lifter LF1, which is waiting above the batch rinse treatment bath ONB in ​​the first batch processing unit BPU1. The lifter LF1 then descends to the immersion position, and the lot is subjected to a batch rinse treatment. This completes the series of batch processing steps. After the batch treatment, the lifter LF1 returns the lot to the space above and hands it over to the second substrate transport mechanism WTR. The second transport mechanism corresponds to the bulk transport mechanism of this invention.

[0158] Step S14: The second substrate transport mechanism WTR delivers the batch-processed lot to the lifter LF65 waiting at the loading position IP. The lifter LF65 then descends to the immersion position in the substrate standby tank 65, where the lot waits in the pure water. When transporting multiple substrates W from the substrate standby tank 65 to the immersion tank 73 of the submersible posture changing unit 55, the lifter LF65 first moves the lot from the immersion position to the loading position IP. The full pitch array substrate transport mechanism STR receives the vertically oriented substrate array from the lifter LF65 at the loading position IP and transports it in the Y direction (to the right). As described above, the full pitch array substrate transport mechanism STR cannot transport all 50 substrates W that make up a lot at once. Therefore, two transport operations are required to transport all of the substrates W that make up a lot to the submersible posture changing unit 55. The second transport operation by the full pitch array substrate transport mechanism STR is performed after all of the substrates W transported in the first transport operation have been removed from the immersion tank 73. The underwater attitude changing section corresponds to the second attitude changing mechanism of the present invention.

[0159] The pusher 55A, which was located at the bottom of the immersion tank 73 of the underwater attitude change unit 55, rises and receives the substrate row from the full pitch array substrate transport mechanism STR which is waiting above the immersion tank 73. Thereafter, the pusher 55A descends to transfer the substrate row to the in-tank carrier 71.

[0160] FIG. 14 illustrates how a plurality of substrates W are transported together in steps S11 to S14.

[0161] Step S15: The intra-tank carrier 71 that has received the row of substrates rotates left, thereby converting the vertically oriented substrates W into a horizontal orientation all at once.

[0162] Step S16: The substrate shift mechanism 57D grasps the substrates W held in the in-tank carriers 71 one by one and transfers them to the first belt conveyor mechanism 67 located to the right of the submersible position change unit 55. The first belt conveyor mechanism 67 accepts the horizontally oriented substrates W one by one and transports them to the right of the relay device 6. There is no particular limitation on the manner in which the first belt conveyor mechanism 67 accepts the substrates W. Because the first belt conveyor mechanism 67 is elongated, it can also accept a subsequent substrate W from the submersible position change unit 55 before it has finished transporting one substrate W. If the transport speed of the first belt conveyor mechanism 67 is increased, it can also be configured not to accept a subsequent substrate W before it has finished transporting one substrate W. The substrate W transported to the right end of the first belt conveyor mechanism 67 is then accepted by the left end of the second belt conveyor mechanism 68 and transported into the single-wafer processing apparatus 2. The second belt conveyor mechanism 68 is also elongated like the first belt conveyor mechanism, and therefore can also carry several horizontally oriented substrates W at once.

[0163] In this way, the first belt conveyor mechanism 67 and the second belt conveyor mechanism 68 are configured to transport multiple substrates W at a time, but in the sense that they do not transport stacked substrates W, they transport horizontally oriented substrates W one by one. This is because the positions of the substrates W transported by the first belt conveyor mechanism 67 and the second belt conveyor mechanism 68 in the Y direction are different from each other.

[0164] The second belt conveyor mechanism 68 transports the substrate W to a position directly below the unloading position OP of the relay device 6. The three lift pins 70 lift the substrate W transported by the second belt conveyor mechanism 68, thereby transferring the substrate W to the unloading position OP.

[0165] The center robot CR, which is positioned at the reference position SP in the single wafer transfer region R3, receives the substrate W from the unloading position OP of the relay device 6 and transfers it to one of the single wafer processing chambers (for example, the single wafer processing chamber 48c) located in the single wafer processing region R4. At this time, the center robot CR receives and delivers the substrate W before drying processing using a hand for transferring the substrate before drying processing.

[0166] Step S17: The substrate W received in the single wafer processing chamber 48c is subjected to single wafer processing on the spot, specifically, spin dry type substrate drying processing.

[0167] Step S18: After the single substrate processing is completed, the substrate W is received by the hand of the center robot CR for transporting the dried substrate, and is transported from the single substrate processing chamber 48c to the path 24. The indexer robot IR receives the processed substrate W from the path 24 and hands it over to the carrier C placed on the second load port 10. In this way, the transport of the substrate W is completed.

[0168] FIG. 15 illustrates how the substrates W in the horizontal position are transported one by one in steps S15 to S18.

[0169] The steps may be performed simultaneously, and this point will be explained below. While the substrate W is undergoing drying processing in step S17, the horizontal substrate transport described in step S16 continues. Therefore, steps S16 and S17 may be performed simultaneously. The substrate transport in step S16 is repeated until all 11 single wafer processing chambers of the single wafer processing apparatus 2 are in use. Furthermore, when any of the single wafer processing chambers that were in use becomes vacant, step S16 is performed again. By performing single wafer substrate processing in parallel in this way, the throughput of the substrate processing system can be increased.

[0170] In step S15, after all of the substrates W in the horizontal position have been transported from the relay device 6 to the single-wafer processing device 2, the submersible position changing unit 55 becomes able to accept a new row of substrates. At this point, the full-pitch array substrate transport mechanism STR receives the row of substrates waiting in the substrate standby tank 65 from the lifter LF65 and passes it to the submersible position changing unit 55. As such, according to this embodiment, step S15 must be performed twice to transport one lot. Therefore, step S15 may be performed simultaneously with steps S16 and S17.

[0171] By appropriately repeating steps S15, S16, and S17, the substrate drying process in the single wafer processing chamber can be completed while the batch grouping of the lot is released. When all of the substrates W that made up the lot have been returned to the carrier C placed on the second load port, the substrate processing in this embodiment is complete.

[0172] The substrate processing in this embodiment is configured to process two carriers C at a time. That is, the substrates W stored in the first carrier C and the second carrier C placed on the first load port 9 of the batch processing apparatus 1 are stored in the third carrier C and the fourth carrier C placed on the second load port 10 of the single wafer processing apparatus 2, respectively.

[0173] In step S15, all of the substrates W whose attitudes are changed originate from the first carrier C. Therefore, the relay device 6 transports only the substrates W stored in the first carrier C to the single-wafer processing device 2. The indexer robot IR stores all of the substrates W from the first carrier C thus transported into the third carrier C.

[0174] When all of the substrates W from the first carrier C have been transported from the underwater attitude changing unit 55, step S15 is executed again. In this case, all of the substrates W to be attitude-changed originate from the second carrier C. Therefore, the relay device 6 will now transport only the substrates W stored in the second carrier C to the single-wafer processing device 2. The indexer robot IR stores all of the substrates W from the second carrier C thus transported into the fourth carrier C.

[0175] In this way, the substrates W stored in the first carrier C and the substrates W stored in the second carrier C are stored in the third carrier C and the fourth carrier C, respectively, without being mixed together.

[0176] <11. Batch Mode> The substrate processing described above relates to a hybrid mode in which batch processing and single wafer processing are performed consecutively. In addition to the hybrid mode, the substrate processing system of this embodiment can be operated in a batch mode in which substrate processing is completed only by the batch processing device 1, and in a single wafer mode in which substrate processing is completed only by the single wafer processing device 2.

[0177] The flow of substrate processing in batch mode will be described below with reference to the flowchart in Fig. 16(a). In this substrate processing, the substrate W is transported in the following order: first load port 9, stocker block 3, transfer block 5, batch processing block 7, transfer block 5, stocker block 3, and first load port 9, during which the batch processing is completed (see Fig. 17).

[0178] Step S31: A carrier C that stores unprocessed substrates W in a vertically arranged manner and that are held in a horizontal position is placed on the first load port 9 of the batch processing device 1. The plurality of substrates W are transferred all at once to the HVC position conversion unit 23. The flow of the substrates W at this time is the same as in step S11 described above.

[0179] Step S32: The HVC attitude conversion unit 23 converts the attitude of the received plurality of substrates W from horizontal to vertical all at once, and passes them to the pusher mechanism 25. The HVC attitude conversion unit 23 performs batch assembly, and arranges two carriers' worth of substrates W on the pusher 25A. The pusher 25A transports the lot to the substrate transfer position PP. The flow of the substrates W at this time is the same as in step S12 described above.

[0180] Step S33: The second substrate transport mechanism WTR receives the lot waiting at the substrate transfer position PP from the pusher mechanism 25 and transfers it to the lifter LF6 waiting above the batch chemical processing bath CHB6. The lot is immersed in the batch chemical processing bath CHB6 and subjected to phosphoric acid treatment. After phosphoric acid treatment, the lot is transported by the second substrate transport mechanism WTR and transferred to the lifter LF1 waiting above the batch rinse processing bath ONB. The lot is immersed in the batch rinse processing bath ONB and subjected to batch rinse treatment. After batch rinse treatment, the lot is transferred to the second substrate transport mechanism WTR. The above flow of the substrates W is the same as that of step S13 described above.

[0181] This step differs from step S13 described above in that the drying process of the substrates W is also performed in the batch processing device 1. That is, the second substrate transport mechanism WTR, which has received the lot after the batch rinse process, moves to above the batch drying chamber DC and hands the lot over to the batch drying chamber DC. The lot that has been dried in the batch drying chamber DC is again received by the second substrate transport mechanism WTR and transported to the substrate transfer position PP in the transfer block 5.

[0182] Step S34: The dried lot is then transferred to the pusher mechanism 25 at the substrate transfer position PP. The pusher mechanism 25 moves the pusher 25A closer to the HVC attitude conversion unit 23. The lot then assumes the state shown in FIG. 4(f). From this state, the batch assembly is released and the attitude of the substrates W, which are in a vertical position, is converted to a horizontal position by performing the reverse operation of the batch assembly operation described with reference to FIG. 4. That is, half of the substrates W constituting the lot supported by the pusher mechanism 25 in FIG. 4(f) are received by the HVC attitude conversion unit 23 (see FIG. 4(e)). The HVC attitude conversion unit 23 then converts the attitude of the received substrates W from a vertical position to a horizontal position (see FIG. 4(d)).

[0183] Step S35: The plurality of substrates W that have been brought into a horizontal position in the HVC position conversion unit 23 are received by the first substrate transport mechanism HTR and returned to an empty carrier C placed on the carrier mounting shelf 13a. The carrier C is then returned to the first load port 9 by the carrier transport mechanism 11.

[0184] In the above description, a plurality of substrates W arranged at full pitch remain in the pusher mechanism 25. The remaining substrates W are rotated 180° by the pusher mechanism 25 (see FIG. 4(d)) and received by the HVC attitude conversion unit 23 (see FIGS. 4(b) and 4(c)). The HVC attitude conversion unit 23 then converts the attitude of the received substrates W from a vertical attitude to a horizontal attitude (see FIG. 4(a)). Thereafter, the above-mentioned step S35 is performed again, and the carrier C is returned to the first load port 9, thereby completing the substrate processing in batch mode.

[0185] FIG. 17 illustrates how the batch processing is performed in steps S31 to S35.

[0186] During the batch mode, the first shutter S1 is closed. With this configuration, the atmosphere inside the batch processing device 1 is isolated from the outside air, allowing batch processing to be performed in a cleaner environment.

[0187] <12. Sheet-fed mode> Next, the flow of substrate processing in the single wafer mode will be described with reference to the flowchart in Fig. 16(b). In this substrate processing, the substrate W is transported in the order of the second load port 10, the indexer block 4, the single wafer processing block 8, the indexer block 4, and the second load port 10, and the single wafer processing is completed during this period (see Fig. 17).

[0188] Step S41: A carrier C storing unprocessed substrates W in a vertically arranged position is placed on the second load port 10 of the single wafer processing apparatus 2. The indexer robot IR transports the unprocessed substrates W stored in the carrier C one by one to the path 24. The path 24 is accessible to the center robot CR, which receives the substrate W from the path 24 and moves to a reference position SP spaced apart in the X direction. In this state, the center robot CR passes the substrate W to the single wafer processing chamber 48c. The substrate W is passed to the single wafer processing chamber 48c in order to perform single wafer processing on the substrate W. Therefore, this step can also be completed by passing the substrate W to another single wafer processing chamber in the single wafer processing block 8. Hereinafter, the description will be given assuming that the substrate W has been passed to the single wafer processing chamber 48c.

[0189] Step S42: The single wafer processing chamber 48c performs chemical treatment such as water-repellent treatment and drying treatment on the received substrate W. When performing water-repellent treatment on the substrate W, the substrate W supported by the spin chuck 8a is rotated while a chemical is supplied from the chemical nozzle 8b located at the supply position. The chemical supplied from the chemical nozzle 8b may be a silane coupling agent that forms a water-repellent protective film on the substrate surface. The drying treatment on the substrate W is performed by the spin dry method described above.

[0190] Step S43: The center robot CR receives the substrate W, for which single-wafer processing has been completed at the reference position SP, from the single-wafer processing chamber 48c, and moves in the X direction to the path 24. The indexer robot IR receives the substrate W placed on the path 24 by the center robot CR, and transports it to the original carrier C (the same carrier C as the carrier C to which the substrate W belonged before processing). By appropriately repeating the above-mentioned steps S41 to S43, single-wafer processing will be completed for all of the substrates W stored in the carrier C.

[0191] FIG. 17 illustrates how the single wafer processing is performed in steps S41 to S43.

[0192] During the single wafer processing mode, the second shutter S2 is closed. With this configuration, the atmosphere inside the single wafer processing apparatus 2 is isolated from the outside air, allowing single wafer processing to be performed in a cleaner environment.

[0193] As described above, according to the present invention, by connecting individual batch processing devices 1 and individual single wafer processing devices 2 via relay devices 6, it is possible to configure a substrate processing system that continuously performs batch processing, in which a plurality of substrates W are processed collectively, and single wafer processing, in which substrates W are processed one by one. That is, the present invention includes a relay device 6 that has two defined positions: a loading position IP for receiving batch-processed substrates W from the batch processing device 1, and an unloading position OP for transferring the substrates W received at the loading position IP to the single wafer processing device 2. The relay device 6 receives substrates W that have completed batch processing in an existing batch processing device 1 at the loading position IP and transfers them to the existing single wafer processing device 2 via the unloading position OP. In this manner, it is possible to relatively easily configure a substrate processing system that continuously performs batch processing and single wafer processing based on technologies developed for the individual devices. Furthermore, it is possible to reduce system design and manufacturing costs. [Example]

[0194] Next, a substrate processing system according to a second embodiment will be described. As shown in FIG. 18, the substrate processing system according to this embodiment has a configuration in which a plurality of single wafer processing devices are connected to one batch processing device 1 via a relay device 6. Specifically, single wafer processing devices 2a and 2b are positioned to sandwich the batch processing device 1 from the Y direction, and relay device 6 bridges the gap between the single wafer processing device 2a and the batch processing device 1, and between the single wafer processing device 2b and the batch processing device 1. Generally, single wafer processing requires more time for substrate processing than batch processing. Therefore, if a substrate processing system is configured with a plurality of single wafer processing devices and one batch processing device 1, an apparatus with improved substrate processing speed can be provided.

[0195] The batch processing apparatus 1 of this embodiment has the same configuration as the batch processing apparatus of embodiment 1. That is, the batch processing apparatus 1 of this embodiment includes a stocker block 3 from which a first load port 9 for placing a carrier C protrudes, a transfer block 5 provided adjacent to the stocker block 3, and a batch processing block 7. The single wafer processing apparatus 2a and single wafer processing apparatus 2b of this embodiment have the same configuration as the single wafer processing apparatus of embodiment 1. That is, the single wafer processing apparatus 2a of this embodiment includes an indexer block 4 from which a second load port 10 for placing a carrier C protrudes, and a single wafer processing block 8 provided with a plurality of single wafer processing chambers. The single wafer processing apparatus 2b has the same configuration as the single wafer processing apparatus 2a.

[0196] The relay unit 6 crosses the batch processing unit 1 in the Y direction, with one end extending to the inside of the single wafer processing unit 2a located to the right of the batch processing unit 1, and the other end extending to the inside of the single wafer processing unit 2b located to the left of the batch processing unit 1. The relay block includes a substrate standby tank 65 and a submersible attitude change unit 55 similar to those in the first embodiment.

[0197] The relay device 6 of this embodiment is equipped with a relay local transport mechanism LRa that transports horizontally oriented substrates W one by one. The relay local transport mechanism LRa is provided to the right of the submersible position change unit 55 and is accessible to the submersible position change unit 55. The relay local transport mechanism LRa accesses the intravessel carrier 71 that holds an array of horizontally oriented substrates W, and receives the uppermost substrate W held by the intravessel carrier 71 above the immersion bath 73. The relay local transport mechanism LRa is equipped with a hand that holds the substrate W, and the hand can be moved back and forth in the Y direction and can also be rotated 90° around a rotation axis extending in the Z direction. This allows the hand to face either the intravessel carrier 71 or the sorting belt conveyor mechanism 66, which will be described later.

[0198] The sorting belt conveyor mechanism 66 is located behind the relay local transport mechanism LRa, and is configured to transport the substrate W handed over from the relay local transport mechanism LRa to the right or left. When the substrate W is handed over from the relay device 6 to the single-wafer processing apparatus 2a, the sorting belt conveyor mechanism 66 transports the substrate W to the right. When the substrate W is transported from the relay device 6 to the single-wafer processing apparatus 2b, the sorting belt conveyor mechanism 66 transports the substrate W to the left. In this way, the sorting belt conveyor mechanism 66 sorts the substrate W by transporting it in the forward or reverse direction. The sorting belt conveyor mechanism 66 has a configuration similar to that of the first belt conveyor mechanism 67 of the first embodiment, and includes multiple belts and multiple rollers.

[0199] FIG. 19(a) specifically illustrates the sorting belt conveyor mechanism 66. The sorting belt conveyor mechanism 66 has three or more lift pins similar to the lift pins 70 described in FIG. 8(c2). The lift pins are capable of freely retracting from and extending into the belt of the sorting belt conveyor mechanism 66, and can reach a relay position NP set above the sorting belt conveyor mechanism 66 by extending them. The relay local transport mechanism LRa transports the substrate W received from the intra-tank carrier 71 to the relay position NP above the sorting belt conveyor mechanism 66. At this time, the lift pins are waiting at the relay position NP, so the substrate W maintains a horizontal position while being supported by the lift pins. When the lift pins retract, the substrate W is handed over to the belt that constitutes the sorting belt conveyor mechanism 66.

[0200] FIG. 19(b) shows how the sorting belt conveyor mechanism 66 operates in the forward direction to transport the substrate W to the right. A first belt conveyor mechanism 67a is provided to the right of the sorting belt conveyor mechanism 66 for transporting the substrate W to the single-wafer processing apparatus 2a. The substrate W transported to the right by the sorting belt conveyor mechanism 66 is then transported further to the right by the first belt conveyor mechanism 67a. Such operation of the sorting belt conveyor mechanism 66 is achieved by a forward / reverse rotation motor 66A that drives the rollers. That is, when the forward / reverse rotation motor 66A rotates the rollers in the forward direction, the belt operates to move to the right. Such control of the forward / reverse rotation motor 66A is achieved by a forward / reverse rotation motor control unit 66B. The forward / reverse rotation motor control unit 66B is part of the third control unit 136.

[0201] FIG. 19(c) shows how the sorting belt conveyor mechanism 66 operates in the reverse direction to transport the substrate W to the left. A first belt conveyor mechanism 67b is provided to the left of the sorting belt conveyor mechanism 66 for transporting the substrate W to the single-wafer processing apparatus 2b. The substrate W transported to the left by the sorting belt conveyor mechanism 66 is then transported further to the left by this first belt conveyor mechanism 67b. Such operation of the sorting belt conveyor mechanism 66 is achieved by a forward / reverse motor 66A that drives the rollers. In other words, when the forward / reverse motor 66A rotates the rollers in the reverse direction, the belt operates to move to the left. Such control of the forward / reverse motor 66A is achieved by a forward / reverse motor control unit 66B.

[0202] Additionally, the substrate processing system according to this embodiment has a second belt conveyor mechanism 68a at the right end of the relay device 6 and a second belt conveyor mechanism 68b at the left end of the relay device 6. An unloading position OP1 of the relay device 6 is set on the second belt conveyor mechanism 68a, and an unloading position OP2 of the relay device 6 is set on the second belt conveyor mechanism 68b. Therefore, the relay device 6 of this embodiment has multiple unloading positions. The right shutter S2a corresponds to the second shutter S2 of the first embodiment and is configured to block communication between the batch processing device 1 and the single wafer processing device 2a. The left shutter S2b also corresponds to the second shutter S2 of the first embodiment and is configured to block communication between the batch processing device 1 and the single wafer processing device 2b.

[0203] The paths of the first belt conveyor mechanism 67b and the second substrate transport mechanism WTR are an overpass, and are configured so that the first belt conveyor mechanism 67b and the second substrate transport mechanism WTR do not interfere with each other.

[0204] Figure 20 explains the flow of substrates in this embodiment. Figure 20 shows the process of transporting horizontally oriented substrates W one by one, and omits the process of transporting substrates in bulk. As shown in Figure 20, a substrate W transported from the submersible orientation change unit 55 to the sorting belt conveyor mechanism 66 via the relay local transport mechanism LRa is first transported in the forward direction to the single-wafer processing apparatus 2a. By repeating this transport, multiple substrates W originating from the same carrier C are all transported to the single-wafer processing apparatus 2a and subjected to single-wafer processing on the spot. The indexer robot IR stores all of the substrates W after single-wafer processing in a single carrier C.

[0205] When the sorting belt conveyor mechanism 66 has transported one carrier C's worth of substrates W, it transports the subsequent substrates handed over by the relay local transport mechanism LRa in the opposite direction. In this way, the substrates W are transported one by one to the single-wafer processing apparatus 2b. By repeating this transport, multiple substrates W originating from the same carrier C are all transported to the single-wafer processing apparatus 2b and subjected to single-wafer processing on the spot. The indexer robot IR stores all of the substrates W after single-wafer processing into a single carrier C.

[0206] According to this embodiment, even if the single wafer processing apparatus 2a is processing substrates, as soon as it has finished transporting the substrates W for one carrier C, the subsequent substrates W can be sent from the batch processing apparatus 1 to the single wafer processing apparatus 2b. With this configuration, single substrate processing can be performed simultaneously in parallel using a plurality of single wafer processing apparatuses, thereby providing a substrate processing system with high throughput. [Example]

[0207] Next, a substrate processing system according to a third embodiment will be described. As shown in FIG. 21, the substrate processing system according to this embodiment has a configuration in which a plurality of single wafer processing devices are connected to one batch processing device 1 via a relay device 6. Specifically, the single wafer processing device 2s and the batch processing device 1 are positioned to sandwich the single wafer processing device 2t from the Y direction, and the relay device 6 bridges the gap between the single wafer processing device 2t and the batch processing device 1, and between the single wafer processing device 2s and the single wafer processing device 2t. Generally, single wafer processing requires more time for substrate processing than batch processing. Therefore, if a substrate processing system is configured with a plurality of single wafer processing devices and one batch processing device 1, it is possible to provide an apparatus with improved substrate processing speed.

[0208] The batch processing apparatus 1 of this embodiment has the same configuration as the batch processing apparatus of embodiment 1. That is, the batch processing apparatus 1 of this embodiment includes a stocker block 3 from which a first load port 9 for placing a carrier C protrudes, a transfer block 5 provided adjacent to the stocker block 3, and a batch processing block 7. The single wafer processing apparatus 2s of this embodiment has the same configuration as the single wafer processing apparatus of embodiment 1. That is, the single wafer processing apparatus 2s of this embodiment includes an indexer block 4 from which a second load port 10 for placing a carrier C protrudes, and a single wafer processing block 8 provided with a plurality of single wafer processing chambers.

[0209] The single wafer processing apparatus 2t is itself a substrate processing apparatus and also a relay station for transferring the substrate W unloaded from the batch processing apparatus 1 to the single wafer processing apparatus 2s. Therefore, unlike the single wafer processing apparatus 2 of the first embodiment, the single wafer processing apparatus 2t does not have a chamber corresponding to the single wafer processing chamber 48a. That is, the single wafer processing apparatus 2t has two rectangular openings perpendicular to the Y direction for the purpose of passing through the relay device 6. These openings are located at the same position in the X direction, one on the side facing the batch processing apparatus 1 and the other on the opposite side. The relay device 6 fits inside the single wafer processing apparatus 2t by passing through these openings. Therefore, the single wafer processing apparatus 2t is configured such that the relay device 6 is located near the openings instead of the single wafer processing chamber.

[0210] The relay unit 6 crosses the batch processing unit 1 in the Y direction, and one end of the relay unit 6 extends to the inside of the single wafer processing unit 2s and the single wafer processing unit 2t located to the right of the batch processing unit 1. The relay unit 6 includes a substrate standby tank 65 and a submersible attitude change unit 55 similar to those in the first embodiment.

[0211] The relay device 6 of this embodiment is equipped with a relay local transport mechanism LRb that transports horizontally oriented substrates W one by one. The relay local transport mechanism LRb is provided to the right of the submersible position change unit 55 and is accessible to the submersible position change unit 55. The relay local transport mechanism LRb accesses the intravessel carrier 71, which holds an array of horizontally oriented substrates W, and receives the uppermost substrate W held by the intravessel carrier 71 above the immersion bath 73. The relay local transport mechanism LRb is equipped with a hand that holds the substrate W, and the hand can be moved back and forth in the Y direction and can also be rotated 180° around a rotation axis extending in the Z direction. This allows the hand to face either the intravessel carrier 71 or the multi-stage belt conveyor mechanism 64, which will be described later.

[0212] The multistage belt conveyor mechanism 64 is a mechanism extending in the Y direction and having a two-stage structure consisting of an upper-stage belt conveyor mechanism 64u and a lower-stage belt conveyor mechanism 64d. The multistage belt conveyor mechanism 64 is located to the right of the relay local transport mechanism LRb and is configured to transport the substrate W handed over from the relay local transport mechanism LRb to the single-wafer processing apparatus 2s or the single-wafer processing apparatus 2t. When the substrate W is handed over from the relay device 6 to the single-wafer processing apparatus 2t, the lower-stage belt conveyor mechanism 64d constituting the multistage belt conveyor mechanism 64 transports the substrate W to the right. When the substrate W is transported from the relay device 6 to the single-wafer processing apparatus 2s, the upper-stage belt conveyor mechanism 64u transports the substrate W to the right. In this way, the multistage belt conveyor mechanism 64 sorts the substrate W by transporting it from the upper or lower side. The upper belt conveyor mechanism 64u and the lower belt conveyor mechanism 64d have the same configuration as the first belt conveyor mechanism 67 of the first embodiment, and include a plurality of belts and a plurality of rollers.

[0213] FIG. 22 specifically illustrates the multistage belt conveyor mechanism 64. The multistage belt conveyor mechanism 64 has three or more lift pins similar to the lift pins 70 described in FIG. 8(c2). The lift pins can freely extend from and retract into the belt of the lower belt conveyor mechanism 64d, and by extending one stage, they can reach a relay position NP2 set above the lower belt conveyor mechanism 64d (see FIG. 22(a)). By extending the lift pins a second stage, they can reach a relay position NP1 set above the upper belt conveyor mechanism 64u (see FIG. 22(b)). The relay local transport mechanism LRb transports the substrate W received from the intra-tank carrier 71 to the relay position NP1 above the upper belt conveyor mechanism 64u or to the relay position NP2 set in the gap between the upper belt conveyor mechanism 64u and the lower belt conveyor mechanism 64d. When the substrate W is delivered to each relay position, the lift pins are waiting at that location, so the substrate W maintains a horizontal position while being supported by the lift pins. When the lift pins retract, the substrate W is delivered to the belts constituting the upper belt conveyor mechanism 64u or the lower belt conveyor mechanism 64d. The multi-stage belt conveyor mechanism 64 corresponds to the first belt conveyor mechanism 67 in the first embodiment.

[0214] The second belt conveyor mechanism 68 described in the first embodiment is provided to the right of the lower belt conveyor mechanism 64d. The second belt conveyor mechanism 68t has a carry-out position OPd set therein when the relay device 6 delivers the substrate W to the single-wafer processing device 2t. The carry-out position OPd is provided with a plurality of lift pins 70 described in the first embodiment, which lift the substrate W transported in the Y direction and hand it over to the center robot CR. As shown in FIG. 22(c), the carry-out position OPd is determined in the gap between the second belt conveyor mechanism 68t and a through-belt conveyor mechanism 68u, which will be described later.

[0215] To the right of the upper belt conveyor mechanism 64u, there is provided a through-belt conveyor mechanism 68u that extends further right than the second belt conveyor mechanism 68. The through-belt conveyor mechanism 68u is configured to transport the substrate W that has been carried into the single-wafer processing apparatus 2t in the Y direction and send it out to the outside of the single-wafer processing apparatus 2t. The through-belt conveyor mechanism 68u is located above the second belt conveyor mechanism 68t.

[0216] A relay belt conveyor mechanism 61 is provided to the right of the through belt conveyor mechanism 68u, extending further right than the through belt conveyor mechanism 68u. The relay belt conveyor mechanism 61 transports the substrate W carried out in the Y direction from the single-wafer processing apparatus 2t to the right.

[0217] To the right of the relay belt conveyor mechanism 61, the second belt conveyor mechanism 68s described in the first embodiment is provided. The second belt conveyor mechanism 68s has a carry-out position OPu set therein when the relay device 6 delivers the substrate W to the single-wafer processing device 2s. Therefore, the relay device 6 of this embodiment has a plurality of carry-out positions set therein. The carry-out position OPu has a plurality of lift pins 70 described in the first embodiment, which lift the substrate W transported in the Y direction and hand it over to the center robot CR. The through belt conveyor mechanism 68u and the relay belt conveyor mechanism 61 have the same configuration as the first belt conveyor mechanism 67 of the first embodiment, and each have a plurality of belts and a plurality of rollers.

[0218] In addition, the right shutter Sa corresponds to the second shutter S2 in the first embodiment and is configured to block communication between the single-wafer processing device 2s and the single-wafer processing device 2t. The left second shutter S2 is also configured to block communication between the single-wafer processing device 2s and the single-wafer processing device 2t and is provided on the side of the single-wafer processing device 2t.

[0219] FIG. 23 illustrates the flow of substrates in this embodiment. FIG. 23 shows the process of transporting horizontally oriented substrates W one by one to the second load port 10 of the single-wafer processing apparatus 2t, and does not illustrate the process of transporting substrates en masse. As shown in FIG. 23, a substrate W transported from the submersible position changer 55 to the lower belt conveyor mechanism 64d via the relay local transport mechanism LRb is first transported to the right and then to the single-wafer processing apparatus 2t. By repeating this transport process, multiple substrates W originating from the same carrier C are all transported to the single-wafer processing apparatus 2a and subjected to single-wafer processing on the spot. The indexer robot IR stores all of the processed substrates W in a single carrier C.

[0220] When the relay local transport mechanism LRb has transported one carrier C's worth of substrates W, it passes the substrates W to the upper belt conveyor mechanism 64u, as shown in Figure 24. The substrates W are then passed on in turn to the through belt conveyor mechanism 68u, the relay belt conveyor mechanism 61, and the second belt conveyor mechanism 68s. In this way, the substrates W are transported one by one to the single-wafer processing apparatus 2s. By repeating this transport, multiple substrates W originating from the same carrier C are all transported to the single-wafer processing apparatus 2s and subjected to single-wafer processing on the spot. The indexer robot IR stores all of the substrates W after single-wafer processing into a single carrier C.

[0221] According to this embodiment, even if the single wafer processing apparatus 2t is processing substrates, as soon as it has finished transporting the substrates W for one carrier C, the subsequent substrates W can be sent from the batch processing apparatus 1 to the single wafer processing apparatus 2s. With this configuration, single substrate processing can be performed simultaneously in parallel using a plurality of single wafer processing apparatuses, thereby providing a substrate processing system with high throughput.

[0222] In addition to the above-described embodiment, the present invention can be modified as follows.

[0223] <Variation 1> Although the above-described substrate processing system does not have a configuration for transporting carriers C between the batch processing apparatus 1 and the single wafer processing apparatus 2, the present invention is not limited to this configuration. The substrate processing system may also be configured as shown in FIG. 25. The configuration of this modified example will be described with reference to this figure. The single wafer processing apparatus 2 of the present invention has a carrier block 12 between the indexer block 4 and the second load port 10, which has a configuration similar to the stocker block 3 provided in the batch processing apparatus 1. The carrier block 12 has a plurality of shelves 14 on which carriers C are placed. The shelves 14 are provided in a partition wall separating the carrier block 12 and the indexer block 4. The shelves 14 include a stock shelf 14b on which carriers C are simply temporarily placed, and a carrier placement shelf 14a for transferring substrates, which is accessed by the indexer robot IR provided in the indexer block 4. The carrier placement shelf 14a is configured to place carriers C that are to store substrates W. The carrier mounting shelf 14a mounts carriers C that store processed substrates W arranged in a vertical direction. In this modified example, one carrier mounting shelf 14a is provided, but multiple carrier mounting shelves 14a may be provided.

[0224] The carrier block 12 of the single wafer processing apparatus 2 and the stocker block 3 of the batch processing apparatus 1 are located at the same position in the X direction. A communication passage CP is provided between the carrier block 12 and the stocker block 3 to allow carriers C to move back and forth in the Y direction between the two blocks. The communication passage CP is located inside a communication block 17 provided between the batch processing apparatus 1 and the single wafer processing apparatus 2. The communication block 17 has side walls and a top plate, and is configured to isolate the outside air from the atmosphere inside the substrate processing system.

[0225] The carrier transport mechanism 11 in the stocker block 3 can move to the carrier block 12 of the single wafer processing apparatus 2 through the communication passage CP of the communication block 17. Therefore, the stocker block 3 and the carrier block 12 are in communication with each other via the communication block 17.

[0226] The carrier transport mechanism 11 can transport carriers C between the carrier mounting shelf 14a and the second load port 10. When the carrier transport mechanism 11 transports a carrier C from the carrier mounting shelf 14a to the second load port 10, the substrates W for which batch processing and single wafer processing have been completed are removed from the substrate processing system. This is because processed substrates W are stored in a stack in the carriers C placed on the carrier mounting shelf 14a. The carrier transport mechanism 11 can also temporarily place the carrier C on the stock shelf 14b before placing it on the second load port 10.

[0227] The carrier transport mechanism 11 can also transport an empty carrier C left on the carrier mounting shelf 13a of the batch processing apparatus 1 to the single wafer processing apparatus 2. A carrier C placed on the carrier mounting shelf 13a initially stores a plurality of substrates W. When the first substrate transport mechanism HTR accesses the carrier C in this state and removes the plurality of substrates W from the carrier C, the carrier C becomes empty. The carrier transport mechanism 11 can transport the empty carrier C from the carrier mounting shelf 13a to the carrier mounting shelf 14a or shelf 14b. The empty carrier C transported to the shelf 14b is transported by the carrier transport mechanism 11 to the carrier mounting shelf 14a at an appropriate time.

[0228] Therefore, according to the configuration of this modified example, it is possible to maintain the correspondence between the carrier C and the substrate W before and after substrate processing. In other words, according to this modified example, when a processed substrate W is carried into an empty carrier C, the carrier C into which the substrate is to be carried can be the same carrier C that contained the substrate W before processing. In this way, management of the substrate W becomes easier.

[0229] <Variation 2> In the above-described embodiment, three single wafer processing chambers 48a, 48b, and 48c are provided to surround the reference position SP of the center robot CR in the single wafer processing apparatus 2, but the reference position SP may be surrounded by four single wafer processing chambers. In other words, this modified example has a configuration in which the unloading position OP in the relay device 6 is spaced apart from the reference position SP.

[0230] FIG. 26 specifically illustrates this modified example. In the substrate processing system according to this modified example, the reference position SP of the center robot CR is surrounded by four single-wafer processing chambers, as shown in the figure. That is, with respect to the reference position SP, single-wafer processing chamber 48a is provided to the front right, single-wafer processing chamber 48b is provided to the rear right, single-wafer processing chamber 48c is provided to the rear left, and single-wafer processing chamber 48d is provided to the front left. Single-wafer processing chamber 48d is located in the middle layer of a fourth stack formed by stacking single-wafer processing chambers in the Z direction. In this regard, single-wafer processing chamber 48a belongs to the first stack described in the embodiment, single-wafer processing chamber 48b belongs to the second stack described in the embodiment, and single-wafer processing chamber 48c belongs to the third stack described in the embodiment. Therefore, single-wafer processing block 8 has 12 single-wafer processing chambers that make up the stack.

[0231] In the above-described embodiment, the unloading position OP of the relay device 6 is set to the left front of the reference position SP, but in this modified example, the single wafer processing chamber 48d is provided at this position. The unloading position OP of the relay device 6 is located in front of the single wafer processing chamber 48d.

[0232] In this modified example, since the relay device 6 and the reference position SP at which the center robot CR can access each single wafer processing chamber are spaced apart, a configuration is required to transport the substrate W from the unloading position OP of the relay device 6 to the rear of the single wafer processing apparatus 2. In this regard, the single wafer processing apparatus 2 of this modified example is provided with an outgoing shuttle mechanism 81 that transports the substrate W before drying processing to the rear of the single wafer processing apparatus 2 in the single wafer transport region R3. In this modified example, a configuration is also required to transport the substrate W on the side of the reference position SP to a downstream position P4, described below, accessible by the indexer robot IR. In this regard, the single wafer processing apparatus 2 of this modified example is provided with a return shuttle mechanism 82 that transports the substrate W after drying processing to the front of the single wafer processing apparatus 2 in the single wafer transport region R3. The outgoing shuttle mechanism 81 transports the substrate W in one direction, and the return shuttle mechanism 82 transports the substrate W in the opposite direction. The outgoing shuttle mechanism 81 and the returning shuttle mechanism 82 each include a support body on which the substrate W is placed, and a movement mechanism that moves the support body in the X direction. The support body is configured to be capable of supporting only one substrate W in a horizontal position.

[0233] The mechanism for moving substrates W back and forth in the single wafer transport region R3 of the single wafer processing apparatus 2 has a two-tiered structure, with an outbound shuttle mechanism 81 on the lower tier and a return shuttle mechanism 82 on the upper tier. The outbound shuttle mechanism 81 transports substrates W before drying processing, and therefore pure water dripping from the substrates W adheres to the outbound shuttle mechanism 81. This pure water may drip from the outbound shuttle mechanism 81. This dripping pure water does not reach the return shuttle mechanism 82, which transports substrates W after drying processing, because the return shuttle mechanism 82 is provided above the outbound shuttle mechanism 81. As such, according to this modified example, the dry state of the substrates W after drying processing can be reliably maintained.

[0234] The outgoing shuttle mechanism 81 extends in the X direction from a receiving position P1 defined in the single wafer transport region R3 as a starting point to a transfer position P2 accessible by the first hand 32a of the center robot CR. A substrate W is placed on the outgoing shuttle mechanism 81 that has stopped at the receiving position P1. The substrate W is placed on the outgoing shuttle mechanism 81 and transported in the X direction.

[0235] The substrate W is placed on the outgoing shuttle mechanism 81 and transported in the X direction, and stops when it reaches the transfer position P2.

[0236] The return shuttle mechanism 82 starts from an upstream position P3 accessible by the second hand 32a of the center robot CR and extends in the X direction to a downstream position P4 accessible by the indexer robot IR. The upstream position P3 is located at the same position as the handover position P2 in the X and Y directions, and the upstream position P3 is located higher than the handover position P2.

[0237] The substrate W is placed on the return shuttle mechanism 82 that has stopped at the upstream position P3. The substrate W is placed on the return shuttle mechanism 82 and transported in the X direction.

[0238] The substrate W is placed on the return shuttle mechanism 82 and transported in the X direction to the downstream position P4, which is a position accessible to the indexer robot IR.

[0239] The relay device 6 is provided with a local robot LR that transports horizontally oriented substrates W one by one. The local robot LR can access the unloading position OP of the relay device 6 and the receiving position P1 of the single wafer processing device 2, and delivers the substrate W received at the unloading position OP to the receiving position P1.

[0240] Therefore, in this modified example, the substrate W before drying processing is transported from the unloading position OP to the receiving position P1 by the local robot LR, and then transported from the receiving position P1 to the transfer position P2 by the outgoing shuttle mechanism 81. The substrate W transported to the transfer position P2 is transported to the single-wafer processing chamber by the center robot CR. Figure 27(a) shows how the substrates W before drying processing are transported one by one.

[0241] In this modified example, the substrates W after drying processing are transported from the single wafer processing chamber to the upstream position P3 by the center robot CR, and then transported from the upstream position P3 to the downstream position P4 by the return shuttle mechanism 82. Figure 27(b) illustrates how the substrates W after drying processing are transported one by one.

[0242] As described above, according to this modification, it is possible to increase the number of single wafer processing chambers in the single wafer processing apparatus 2. This is because the center robot CR at the reference position SP can access four single wafer processing chambers.

[0243] <Variation 3> While the single-wafer processing apparatus 2 in the embodiment is provided with a single-wafer processing chamber that dries the substrate W using a spin-dry method, the present invention is not limited to this configuration and may also be configured to dry the substrate W using a supercritical fluid. The substrate drying chamber installed in the single-wafer processing apparatus 2 in this modified example is a supercritical fluid chamber. The supercritical fluid chamber dries the substrate W using, for example, carbon dioxide in a supercritical fluid state. Fluids other than carbon dioxide may also be used as supercritical fluids for drying. The supercritical state is achieved by placing carbon dioxide under its specific critical pressure and critical temperature. Specifically, the pressure is 7.38 MPa and the temperature is 31°C. In the supercritical state, the surface tension of the fluid becomes zero, so the gas-liquid interface does not affect the circuit pattern on the surface of the substrate W. Therefore, drying the substrate W using a supercritical fluid can prevent the collapse of the circuit pattern on the substrate W, known as pattern collapse.

[0244] 28 illustrates the configuration of a single wafer processing apparatus 2 according to this modified example. The supercritical fluid chamber has an inlet through which a substrate W before drying is carried in and an outlet through which a substrate W after drying is carried out. The inlet is located at the front or rear of the supercritical fluid chamber and has a shutter S5 that can be opened and closed. The outlet is located on a side wall of the supercritical fluid chamber and has a shutter S6 that can be opened and closed. The shutters S5 and S6 are closed during drying processing using supercritical fluid. The inlet of the supercritical fluid chamber faces the first wet transfer robot AR1 and the second wet transfer robot AR2, and the outlet faces the single wafer transfer region R3.

[0245] A feature of the single wafer processing apparatus 2 according to this modification is that two robots have been added to the single wafer processing block 8. One of the added robots, a first wet transfer robot AR1, is provided in an area sandwiched between the second belt conveyor mechanism 68 and the supercritical fluid chamber 48f located to the left of the single wafer transfer region R3. The other robot, a second wet transfer robot AR2, is provided in an area sandwiched between the single wafer processing chamber 48a and the supercritical fluid chamber 48e located to the right of the single wafer transfer region R3.

[0246] In addition, the single wafer processing block 8 is provided with a single wafer processing chamber capable of chemical processing. This single wafer processing chamber is not a supercritical fluid chamber but is a chemical processing chamber having a chemical nozzle 8b that supplies a chemical to the substrate W. Two chemical processing chambers are provided in the single wafer processing block 8, one of which is the single wafer processing chamber 48a described above. The other is the single wafer processing chamber 49d located above the second belt conveyor mechanism 68. As described with reference to FIG. 12, the chemical processing chamber 49d is located above the relay device 6. IPA may be used as the chemical. The chemical processing chamber is explosion-proof enough to handle flammable IPA. In this way, the chemical processing chamber can safely perform the IPA processing required before the drying process using a supercritical fluid. However, the chemical used in the chemical processing chamber of this embodiment is not limited to IPA.

[0247] The position of the chemical liquid treatment chamber can be changed relatively freely, but one of the two chemical liquid treatment chambers is located to the right of the single wafer transport region R3, and the other is located to the left. With this configuration, it is not necessary to have the center robot CR located in the single wafer transport region R3 receive the substrate W after IPA treatment. In other words, the substrate W that has been chemically treated in the chemical liquid treatment chamber is transported to the supercritical fluid chamber by the first wet transport robot AR1 or the second wet transport robot AR2, so that there is no congestion of substrates W waiting for IPA treatment, which would result in a decrease in throughput.

[0248] The first wet transfer robot AR1 receives horizontally oriented substrates W before drying (substrates W after chemical processing) one by one from the single wafer processing chamber 49d and transfers them through the entrances to one of the supercritical fluid chambers located to the left of the single wafer transfer region R3. Therefore, the substrate transfer hand of the first wet transfer robot AR1 can access all of the entrances of the single wafer processing chamber 49d and the nearby supercritical fluid chambers. Because the chambers are stacked in the Z direction, the hand can move vertically. Some of the chambers are located in front of the first wet transfer robot AR1, while others are located behind the first wet transfer robot AR1. Therefore, the hand can face either forward or backward.

[0249] The second wet transfer robot AR2 has a configuration similar to that of the first wet transfer robot AR1. The second wet transfer robot AR2 receives horizontally oriented substrates W before drying (substrates W after chemical processing) one by one from the single wafer processing chamber 48a and transfers them through the entrance into one of the supercritical fluid chambers located on the left side of the single wafer transfer region R3. Therefore, the substrate transfer hand of the second wet transfer robot AR2 can access all of the chambers forming the front stack and the rear stack.

[0250] The center robot CR can access the outlet of the supercritical fluid chamber. The second hand 32b of the center robot CR carries out the dried substrate W from either the supercritical fluid chamber located on the left side of the single wafer transport region R3 or the supercritical fluid chamber located on the right side of the single wafer transport region R3 through the above-mentioned outlet.

[0251] The center robot CR can also access the unloading position OP in the relay device 6.

[0252] The center robot CR can also access the path 24 for transferring the substrate W to the indexer robot IR.

[0253] FIG. 29 shows the flow of a substrate W according to this modification. This modification can be broadly divided into two substrate transport methods, each of which will be described in turn. FIG. 29(a) illustrates a first substrate transport method. According to this method, a substrate W located at the unloading position OP in the relay device 6 is first received by the center robot CR and transferred to the single-wafer processing chamber 49d, which is a chemical processing chamber. After the IPA processing, the substrate W is again received by the first wet transport robot AR1 without being dried and transferred to one of the supercritical fluid chambers located to the left of the single-wafer transport region R3. After the drying processing, the substrate W is then received by the center robot CR and transferred to the path 24 accessible by the indexer robot IR. After the substrate W is transferred to the single-wafer processing block 8 in this way, it is processed and then released to the indexer block 4.

[0254] 29(b) illustrates a second substrate transport method. According to this method, the substrate W located at the unloading position OP in the relay device 6 is first received by the center robot CR and transferred to the single wafer processing chamber 48a, which is a chemical liquid processing chamber. After the IPA processing, the substrate W is then received by the second wet transport robot AR2 without being dried and transferred to one of the supercritical fluid chambers located to the right of the single wafer transport region R3. After the drying processing, the substrate W is again received by the center robot CR and transferred to the path 24 accessible by the indexer robot IR. After the substrate W is transferred into the single wafer processing block 8 in this way, it is processed individually and then released to the indexer block 4.

[0255] Which method is used to dry the substrate W is determined based on the availability of the supercritical fluid chamber.

[0256] In either method, the substrate W positioned at the unloading position OP is subjected to chemical treatment and drying treatment and then transported to the path 24. The indexer robot IR receives the substrate W held in the path 24 and transports it to an empty carrier C. In this manner, the substrate processing in this modified example is completed.

[0257] As described above, this modification uses a supercritical fluid chamber to dry the substrate, thereby enabling substrate processing that does not cause pattern collapse on the device surface. To dry the substrate in a supercritical fluid chamber, the substrate W must first be pre-processed using a chemical solution. According to the configuration of this modification, one chemical solution processing chamber is provided to the left of the single wafer transport region R3 and one is provided to the right, ensuring that this pre-processing can be performed. The number of chemical solution processing chambers in this modification is not limited to the configuration described above; multiple chemical solution processing chambers may be provided to the left of the single wafer transport region R3, or multiple chemical solution processing chambers may be provided to the right of the single wafer transport region R3.

[0258] <Variation 4> In the above-described embodiment, the belt conveyor mechanism of the relay device 6 transports horizontally oriented substrates W one by one. However, the present invention is not limited to this configuration. As shown in FIG. 30(a), a configuration may be adopted in which a third substrate transport mechanism OTR movable in the Y direction is provided instead of the belt conveyor mechanism. The third substrate transport mechanism OTR moves from the first shutter S1 across the second shutter S2 to the unloading position OP, and can also move in the reverse direction. The third substrate transport mechanism OTR can also receive horizontally oriented substrates W one by one from the intra-tank carrier 71 and transport them to the unloading position OP. In this modified example, a path 26 is provided at the unloading position OP, and the third substrate transport mechanism OTR delivers horizontally oriented substrates W one by one to the center robot CR of the single-wafer processing apparatus 2 via this path 26. This configuration allows the second shutter S2 to be located midway along the substrate transport path without requiring multiple belt conveyor mechanisms, simplifying the device configuration. The third substrate transport mechanism OTR has a hand for gripping the substrate W, and the hand directly accesses the intra-tank carrier 71 to receive the substrate W. Therefore, this embodiment can be configured without the intra-tank carrier shift mechanism 57C and substrate shift mechanism 57D described in the embodiment.

[0259] <Variation 5> In the configuration of the fourth modification described above, the third substrate transport mechanism OTR transports substrates W one by one from the intravessel carrier 71 of the submersible position changer 55 to the unloading position OP. However, the present invention is not limited to this configuration. As shown in FIG. 30(b), a fourth substrate transport mechanism MTR capable of transporting multiple substrates W collectively may be provided instead of the third substrate transport mechanism OTR, and 25 substrates W arranged at full pitch may be transported to the unloading position OP. A path 26a capable of holding 25 horizontally oriented substrates W stacked in the Z direction is provided at the unloading position OP. The fourth substrate transport mechanism MTR transports the received substrates W to the path 26a. The fourth substrate transport mechanism MTR receives the horizontally oriented substrates W from the intravessel carrier 71 and transports them to the path 26a while maintaining their orientation. The substrates W arranged on the path 26a are transported one by one from the top to the single-wafer processing chamber by the center robot CR in the single-wafer processing apparatus 2. Such a configuration allows efficient substrate transport within the relay device 6. Furthermore, a pure water tank can be provided at the position of the path 26a in this modified example, and the substrates W waiting to be transported by the center robot CR can be submerged in water to prevent the substrates W from drying out. In this case, the relay device 6 is provided with a lifting mechanism for raising and lowering the path 26a.

[0260] <Variation 6> Although the relay device 6 in the above-described embodiment is configured to receive multiple substrates W arranged face-to-face at the loading position IP, the present invention is not limited to this configuration. Multiple substrates W arranged face-to-back may also be received at the loading position IP. In this modified example, the batch assembly method performed in the transfer block 5 differs from that in the embodiment. That is, the pusher mechanism 25 provided in the transfer block 5 in the embodiment (see FIG. 4) does not rotate the pusher 25A by 180° as described in FIG. 4(d) when performing batch assembly. By not performing this operation, multiple substrates W are assembled in the batch without being inverted. Therefore, the substrates W in a lot that are assembled in the batch are arranged face-to-back with their device surfaces all facing left. After receiving the first substrate W, the pusher 25A shifts by a half pitch to receive the second substrate W2 into the gap between the first substrates W. The pusher 25A is moved by a horizontal moving part 25C of the pusher mechanism 25.

[0261] According to this modification, the configuration of the embodiment can be further simplified. In the embodiment, the pusher 55A in the underwater attitude change unit 55 needs to be rotated by at least 180°. In contrast, according to this modification, such complicated control is not necessary. This is because the device surfaces of all of the substrates W constituting the lot face upward simply by rotating the intra-tank carrier 71 by 90° left.

[0262] <Variation 7> When adopting a configuration in which multiple substrates W arranged face-to-back are received at the loading position IP, the relay device 6 can be further simplified by transporting the lot loaded at the loading position IP to the unloading position OP without changing its orientation, as shown in FIG. 30(c). In this modification, substrates are transported within the relay device 6 by transporting a lot of vertically oriented substrates W arranged at a half pitch. That is, the relay device 6 of this modification includes a half-pitch substrate transport mechanism HFTR capable of transporting substrates W arranged at a half pitch, instead of the full-pitch substrate transport mechanism STR used in the embodiment. The half-pitch substrate transport mechanism HFTR can move from the loading position IP to the unloading position OP and also in the reverse direction. The half-pitch substrate transport mechanism HFTR can access the loading position IP to receive a lot from the lifter LF65 of the substrate standby tank 65 on the spot, and can access the unloading position OP to transfer a lot to the intra-tank carrier 71 of the submersible orientation change unit 55 on the spot. The half-pitch substrate transport mechanism HFTR is configured to receive a plurality of substrates W by a pair of chucks 30a. The chucks 30a have grooves arranged at a half pitch for gripping the substrates W.

[0263] At the unloading position OP, an underwater posture changing device 56 having a configuration similar to the underwater posture changing section 55 described in the embodiment is positioned. The underwater posture changing device 56 has an intra-tank carrier 71a that can receive 50 substrates arranged at half pitch all at once. The intra-tank carrier 71a is positioned in an immersion tank 73a in which the lot is immersed in pure water. The pusher 56A is configured to hold the substrates W arranged at half pitch and is movable from the bottom of the immersion tank 73a to above the immersion tank 73a. Figure 31(a) illustrates how the substrates W are transferred from the half-pitch substrate transport mechanism HFTR to the pusher 56A of the underwater posture changing device 56.

[0264] Figure 31(b) shows the state when the pusher 56A has subsequently returned to the bottom of the immersion tank 73a. Even in this state, the multiple substrates W held by the pusher 55A do not reach the bottom of the immersion tank 73a. This is because the intravessel carrier 71a is waiting inside the immersion tank 73a. The intravessel carrier 71a is capable of holding multiple substrates W arranged at half-pitch intervals. The intravessel carrier left-hand rotation mechanism 58A can rotate the intravessel carrier 71a 90° to the right while the substrates W are immersed in the immersion tank 73a.

[0265] 31(c) shows the state when the intravessel carrier 71a is rotated to the right and then raised by the intravessel carrier lifting mechanism 58B. At this time, the intravessel carrier 71a holds only the top substrate W positioned above the immersion bath 73a. The substrate W positioned above the immersion bath 73a is transported to the single-wafer processing chamber by the center robot CR. Therefore, the space above the immersion bath 73a corresponds to the unloading position OP.

[0266] Thereafter, the intra-tank carrier lifting mechanism 58B pays out the intra-tank carrier 71a by a width of half a pitch, and each time the uppermost substrate W is received by the center robot CR. In this way, the substrates W held in the intra-tank carrier 71a are transported one by one to the single-wafer processing chamber.

[0267] The substrates W that make up a lot include a first substrate W1 that originates from a first carrier C and a second substrate W2 that originates from a second carrier C. When the indexer robot IR transports substrates W to the second load port 10, it transports only the first substrate W1 to one of the two carriers C placed on the second load port 10, and only the second substrate W2 to the other. With this configuration, the first substrate W1 and the second substrate W2 are stored in separate carriers C without being mixed together, making it easier to manage the substrates W.

[0268] As described above, the configuration of the apparatus of this modified example is simpler than that of the embodiment, and a substrate processing unit that is easy to control can be provided.

[0269] <Variation 8> Although the relay device 6 according to the above-described embodiment has a shower head 69, the present invention is not limited to this configuration, and the relay device 6 may have a configuration that does not have the shower head 69 and the liquid supply unit associated therewith.

[0270] <Variation 9> The relay device 6 in the above-described embodiment was equipped with a first shutter S1 and a second shutter S2, but the present invention is not limited to this configuration, and it may be configured not to have either or both of the first shutter S1 and the second shutter S2.

[0271] <Modification 10> While the relay device 6 in the above-described embodiment was located in the middle layer of the stack made up of the single wafer processing chambers in the single wafer processing apparatus 2, the present invention is not limited to this configuration, and the relay device 6 can also be located in the upper layer of the stack. With this configuration, the maintenance space between the batch processing apparatus 1 and the single wafer processing apparatus 2 is not divided by the relay device 6, making it possible to provide a substrate processing unit that is easy to maintain. Similarly, the relay device 6 can also be located in the lower layer of the stack.

[0272] <Variation 11> Although the relay device 6 in the above-described embodiment is located behind the transfer block 5, the present invention is not limited to this configuration. The relay device 6 may also be configured to be located behind the batch processing block 7.

[0273] <Variation 12> The substrate processing system according to the above-described embodiment includes a first housing 1A for the batch processing device 1, a second housing 2A for the single wafer processing device 2, and an intermediate housing 6A connecting these together, but the present invention is not limited to this configuration. As shown in FIG. 32(a), a substrate processing system can also be configured with a common wall surface forming the first housing 1A and the second housing 2A and incorporating the intermediate housing 6A. According to this modification, the intermediate device 6 is configured to be incorporated into the housing of the substrate processing system. With this configuration, a substrate processing system with a reduced number of parts can be provided.

[0274] <Variation 13> In the configuration of the above-described modified example 13, the first housing 1A and the second housing 2A have a common wall surface, but the present invention is not limited to this configuration. As shown in Fig. 32(b), the first housing 1A and the second housing 2A may have separate walls, and the side surfaces of the first housing 1A and the second housing 2A may be adjacent in the Y direction to incorporate an intermediate housing 6A. By providing a double wall surface separating the batch processing device 1 and the single wafer processing device on the first housing 1A side and the second housing 2A side, an existing substrate processing device, including the housings, can be repurposed for the substrate processing system of the present invention.

[0275] <Variation 14> Although the first load port 9 of the batch processing apparatus 1 and the second load port 10 of the single wafer processing apparatus 2 in the above-described embodiment are located at the same position in the X direction, the present invention is not limited to this configuration. As shown in Figure 33(a), by installing the first load port 9 on the front wall of the first housing 1A that constitutes the batch processing apparatus 1 and installing the second load port 10 on the rear wall of the second housing 2A that constitutes the single wafer processing apparatus 2, the first load port 9 and the second load port 10 can be located at different positions in the X direction.

[0276] <Variation 15> The substrate processing system according to the above-described embodiment may be configured to include an airflow generating unit 83 that generates airflow within the system, as shown in FIG. 33(b). Specific examples of the airflow generating unit 8 include a fan and a pump. The airflow generating unit 8 is provided in at least one of the batch processing unit 1, the single wafer processing unit 2, and the relay unit 6 so as to allow the atmosphere of the relay unit 6 to flow into the batch processing unit 1. With this configuration, even if phosphoric acid solution handled by the batch processing unit 1 becomes airborne as droplets, the droplets do not reach the single wafer processing unit 2. This prevents corrosion of the chambers and robot mechanisms constituting the single wafer processing unit 2 by acid. The airflow control unit 84 controls the airflow generating unit. The airflow control unit 84 is part of the first control unit 131.

[0277] <Variation 16> In the above-described embodiment, the immersion tank 73 is provided with a pusher 55A, but the present invention is not limited to this configuration. As shown in FIG. 34, a configuration without a pusher 55A is also possible. FIG. 34(a) illustrates the configuration of this modified example in which the chuck 30 of the full-pitch array substrate transport mechanism STR directly transfers multiple substrates W to the intravessel carrier 71 located above the immersion tank 73. That is, the intravessel carrier 71 of this modified example can be elevated to above the immersion tank 73. The lifting and lowering operation of the intravessel carrier 73 is achieved by the intravessel carrier lifting mechanism 55B. When the intravessel carrier 71 descends into the immersion tank 73 from the state shown in FIG. 34(a), the state becomes similar to that shown in FIG. 7(b). The subsequent operation of the intravessel carrier 71 is similar to that of the above-described embodiment.

[0278] A lot of 50 substrates W arranged at half pitch is transported in two trips by a full-pitch substrate transport mechanism STR capable of transporting 25 substrates W, but this modified example has a unique configuration for the second transport. Figure 34(b) shows the state in which the intra-tank carrier 71 receives the substrates W from the chuck 30 above the immersion tank 73 during the second transport. At this time, the device surfaces of the substrates W all face left, which is different from Figure 34(a).

[0279] The intravessel carrier 71 that receives the substrates W arranged in this manner is first immersed in pure water in the immersion tank 73, as shown in FIG. 34(c). The intravessel carrier 71 is then rotated right by 90° in the immersion tank 73. In this way, the device surfaces of the substrates W, which were all facing left, are rotated right so that they all face upward (see FIG. 34(d)). Such rotation of the intravessel carrier 71 is achieved by the intravessel carrier right rotation mechanism 57F. FIG. 34(d) corresponds to FIG. 7(c) of the embodiment. Thereafter, the operation of the intravessel carrier 71 is the same as in the embodiment described above. According to this modification, a substrate processing system can be configured without providing a pusher 55A in the immersion tank 73, which is more advantageous in terms of cost than the embodiment.

[0280] <Variation 17> Although the substrate processing system in Modification 7 includes pusher 56A, the present invention is not limited to this configuration. It is also possible to omit pusher 56A by having half-pitch substrate transport mechanism HFTR transfer multiple substrates W arranged at a half pitch to intra-tank carrier 71 located above immersion tank 73. This modification has the same configuration as Modification 16. [Explanation of symbols]

[0281] 1. Batch processing equipment 1A First enclosure 1B Third wall (orthogonal wall) 2 Single wafer processing equipment 2A Second housing 2B 4th wall (orthogonal wall) 3 Stocker Block 4 Indexer Blocks 5 Transfer block 6. Relay Device 6A Relay enclosure 7 Batch Processing Block 8 Single-Wafer Processing Block 9. Loading Port No. 1 10 Second load port (second carrier shelf) 11 Carrier transport mechanism 13a Carrier shelf (first carrier shelf) 15 First attitude transformation mechanism 48a Single wafer processing chamber 48b Single wafer processing chamber 48c Single Wafer Processing Chamber 55 Underwater attitude change unit (second attitude change mechanism) 57D Substrate shift mechanism (single substrate shift mechanism) 65 Board standby tank (standby tank) 67 First belt conveyor mechanism (relay transport mechanism) 68 Second belt conveyor mechanism (relay transport mechanism) 131 Control Unit 132 Control Unit BPU1 First batch processing unit (batch processing tank) BPU2 Second batch processing unit (batch processing tank) BPU3 3rd batch processing unit (batch processing tank) BPU4 4th batch processing unit (batch processing tank) BPU5 5th batch processing unit (batch processing tank) BPU6 6th batch processing unit (batch processing tank) CR center robot (single wafer transfer mechanism) HTR 1st substrate transfer mechanism (substrate handling mechanism) IP loading position IR Indexer Robot OP unloading position S1 First shutter (batch processing device side shutter) S2 Second shutter (single-sheet processing device side shutter) STR full pitch array substrate transport mechanism (relay transport mechanism) W substrate WTR Second Transfer Mechanism (Bulk Transfer Mechanism)

Claims

1. A substrate processing system that continuously performs batch processing in which a plurality of substrates are processed at once and single substrate processing in which the substrates are processed one by one, A batch processing device that performs batch processing; at least one single wafer processing apparatus for performing single wafer processing on substrates that have been batch-processed; at least one relay device having two defined positions: a carry-in position for receiving a batch-processed substrate from the batch processing device, and an unloading position for delivering the substrate received at the carry-in position to the single-wafer processing device; The batch processing device includes: a first carrier mounting shelf for mounting a carrier that stores a plurality of horizontally oriented substrates at a predetermined interval in a vertical direction, a transfer block adjacent to the first carrier mounting shelf, and a batch processing block adjacent to the transfer block, The transfer block is a substrate handling mechanism for simultaneously removing a plurality of substrates from a carrier placed on the first carrier placement shelf; a first position changing mechanism for collectively changing the position of the plurality of substrates removed from the carrier from a horizontal position to a vertical position, The batch processing block includes: at least one batch processing tank for immersing a plurality of vertically oriented substrates at once; a batch transport mechanism that transports a plurality of substrates in a vertical position at once between the transfer block, the batch processing tank, and the carry-in position of the relay device, The single wafer processing apparatus includes: a second carrier placement shelf for placing the carrier thereon, an indexer block adjacent to the second carrier placement shelf, and a single wafer processing block adjacent to the indexer block, The single wafer processing block includes: a plurality of single-wafer processing chambers for drying the substrates one by one in a horizontal position; a single wafer transport mechanism that receives the batch-processed substrates one by one in a horizontal position from the unloading position of the relay device and transports the substrates to the single wafer processing chamber, the indexer block includes an indexer robot that stores a substrate that has been subjected to single-wafer processing in the carrier placed on the second carrier placement shelf; The relay device is a second position change mechanism that changes the position of the substrates received from the batch processing device from a vertical position to a horizontal position; an intermediate transport mechanism that transports the substrate along a substrate transport path provided between the loading position and the unloading position, A substrate processing system comprising:

2. 2. The substrate processing system according to claim 1, The relay device is the second position change mechanism is provided at the loading position side, and further includes a single-substrate shift mechanism that takes out one substrate at a time from the plurality of substrates that have been collectively changed from a vertical position to a horizontal position by the second position change mechanism and transfers the substrate to the relay transport mechanism, The substrate processing system according to claim 1, wherein the relay transport mechanism transports the horizontally oriented substrates handed over from the single substrate shift mechanism one by one toward the unloading position.

3. 2. The substrate processing system according to claim 1, The relay device is The second attitude changing mechanism is provided on the loading position side, The substrate processing system according to claim 1, wherein the relay transport mechanism transports the plurality of substrates, which have been converted collectively from a vertical position to a horizontal position by the second position conversion mechanism, collectively toward the unloading position.

4. 2. The substrate processing system according to claim 1, The relay device is The second attitude changing mechanism is provided on the unloading position side, the relay transport mechanism transports the plurality of substrates in the vertical orientation received from the batch processing device to the second orientation conversion mechanism at once; a second position changing mechanism for changing the position of the substrates received from the relay transport mechanism from a vertical position to a horizontal position at the same time;

5. 2. The substrate processing system according to claim 1, The relay transport mechanism is constituted by a belt conveyor mechanism. A substrate processing system comprising:

6. 2. The substrate processing system according to claim 1, The relay transport mechanism is composed of a robot capable of gripping a substrate. A substrate processing system comprising:

7. 2. The substrate processing system according to claim 1, a waiting tank for immersing a plurality of substrates in a vertical position carried in from the batch processing device in a liquid, at the carrying-in position of the relay device; A substrate processing system comprising:

8. 2. The substrate processing system according to claim 1, The relay device is A substrate processing system comprising: a liquid supplying section that supplies liquid to the substrate transported by the relay transport mechanism to wet a surface of the substrate with the liquid.

9. 2. The substrate processing system according to claim 1, The relay device is A substrate processing system comprising: a batch processing apparatus side shutter capable of blocking circulation of atmosphere through the substrate transport path, the batch processing apparatus side shutter being provided on the loading position side.

10. 2. The substrate processing system according to claim 1, The relay device is A substrate processing system comprising: a single-wafer processing apparatus side shutter capable of blocking circulation of atmosphere through the substrate transport path, the single-wafer processing apparatus side shutter being provided on the unloading position side.

11. 2. The substrate processing system according to claim 1, The substrate processing system according to claim 1, wherein the relay device has a discharge position located at a middle layer of a stack formed by stacking the single wafer processing chambers vertically in the single wafer processing apparatus.

12. 2. The substrate processing system according to claim 1, a transfer mechanism for transferring a substrate to the single wafer processing chamber and transferring the substrate to the single wafer processing chamber;

13. 2. The substrate processing system according to claim 1, The relay device is provided on the transfer block side of the batch processing tank of the batch processing device.

14. 2. The substrate processing system according to claim 1, A substrate processing system comprising a carrier transport mechanism that transports the carrier between the batch processing device and the single wafer processing device so that the substrate after the substrate processing is returned to the same carrier that housed the substrate before the substrate processing.

15. 2. The substrate processing system according to claim 1, The batch processing device includes: a first housing that houses each block constituting the batch processing device; a first load port protruding from a first wall surface that is orthogonal to a predetermined direction from the batch processing block toward the transfer block, among the wall surfaces that constitute the first housing; The single wafer processing apparatus includes: a second housing that houses each block constituting the single wafer processing device; a second load port protruding from a second wall surface that is orthogonal to the predetermined direction among the wall surfaces that constitute the second housing, a second load port disposed on the same side as the first load port in the predetermined direction;

16. 2. The substrate processing system according to claim 1, The batch processing device includes: a first housing that houses each block constituting the batch processing device; a first load port protruding from a first wall surface that is orthogonal to a predetermined direction from the batch processing block toward the transfer block, among the wall surfaces that constitute the first housing; The single wafer processing apparatus includes: a second housing that houses each block constituting the single wafer processing device; a second load port protruding from a second wall surface that is orthogonal to the predetermined direction among the wall surfaces that constitute the second housing, The relay device is a relay housing that connects the first housing and the second housing that are spaced apart from each other, a first orthogonal wall surface of the first housing that is perpendicular to the first wall surface and a second orthogonal wall surface of the second housing that is perpendicular to the second wall surface and is disposed opposite the first orthogonal wall surface.

17. 2. The substrate processing system according to claim 1, a batch processing apparatus, first and second single wafer processing apparatuses, and first and second relay apparatuses; the batch processing device is disposed between the first single wafer processing device and the second single wafer processing device with a gap therebetween; the batch processing device and the first single wafer processing device are connected via the first relay device, the batch processing device and the second single wafer processing device are connected via the second relay device; A substrate processing system comprising:

18. 2. The substrate processing system according to claim 1, a batch processing apparatus, first and second single wafer processing apparatuses, and first and second relay apparatuses; the batch processing device, the first single wafer processing device, and the second single wafer processing device are arranged in that order with a gap therebetween; the batch processing device and the first single wafer processing device are connected via the first relay device, the batch processing device and the second single wafer processing device are connected via the second relay device; A substrate processing system comprising:

19. 2. The substrate processing system according to claim 1, A substrate processing system comprising: an airflow generating unit that causes an atmosphere of the relay device to flow into the batch processing device.

20. 2. The substrate processing system according to claim 1, the batch processing block includes a batch drying chamber for drying a plurality of substrates at the same time; The single wafer processing block includes a single wafer processing chamber capable of performing chemical processing on the substrates one by one, Control of a batch processing mode in which substrate processing is completed only by the batch processing device; Control of a single wafer processing mode in which substrate processing is completed only by the single wafer processing apparatus; and a hybrid processing mode in which substrate processing is completed using the batch processing device and the single wafer processing device. A substrate processing system comprising:

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