Manufacturing method for device chips

Abstract

To provide a device chip manufacturing method capable of suppressing peeling of a functional layer when an impact is applied.SOLUTION: A device chip manufacturing method comprises a film removing step 101, a modified layer forming step 102, and a dividing step 103. The film removing step removes a film in a region corresponding to a street. The modified layer forming step forms a modified layer at an inside of the wafer by positioning a condensing point of a laser beam of a wavelength having permeability to the wafer at an inside of the wafer and radiating a laser beam along a region corresponding to a region from which the film was removed from a rear surface side of the wafer. The dividing step divides the wafer into individual device chips by applying external force to the wafer. In the film removing step 101, a distance from an end part in a width direction of the street to a region from which the film is removed is set to a prescribed upper-limit value or less so that a step is formed between a region from which a substrate is exposed and a region covered with the film in an outer edge part of a device chip when the dividing step 103 divides the wafer into individual device chips.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a device chip. [Background technology]

[0002] Semiconductor device chips are manufactured by dividing a wafer, which has streets (planned division lines) set on its surface and devices partitioned by the streets, along the streets to separate each device. A method for dividing a plate-shaped workpiece such as a semiconductor wafer is known in which a pulsed laser beam with a wavelength that is transparent to the workpiece is irradiated along the streets with a focal point aligned inside the area to be divided to form a division starting point (modified layer) (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 3408805 [Patent Document 2] JP 2014-146810 A [Patent Document 3] Japanese Patent Application Publication No. 7-149393 [Patent Document 4] JP 2019-156405 A Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, in order to improve the processing power of semiconductor chips such as ICs (Integrated Circuits) or LSIs (Large Scale Integration), semiconductor wafers have been put to practical use, in which a low dielectric constant insulator coating (Low-k film) made of an inorganic film such as SiOF or BSG (SiOB) or an organic film such as a polymer film of a polyimide or parylene system and a functional film forming a device are laminated on the surface of a substrate such as silicon (Si), or a semiconductor wafer configured to partially arrange a metal pattern made of a conductive film made of a metal or the like called a TEG (Test Element Group) on the street and test the function of the device through the metal pattern before dividing the wafer.

[0005] In the case of such wafers having a low-k film laminated on the surface thereof or a TEG disposed thereon, even if a method is used in which a modified layer that serves as the starting point for splitting is formed inside the substrate and then an external force is applied, it is not possible to reliably break the low-k film or TEG, resulting in the functional layer peeling off and reducing the quality of the individual device chips.

[0006] To address this problem, a method has been proposed in which a laser beam having a wavelength that is absorbent for a functional layer laminated on a substrate is irradiated with the laser beam having a wavelength that is transparent to the substrate before forming a modified layer (see Patent Document 2).

[0007] The device chips manufactured in this manner are shipped and transported while being contained in the pocket-shaped carrier tape described in Patent Documents 3 and 4. However, a new problem has arisen in that the semiconductor device chip moves inside the pocket due to vibrations and other factors during transportation, causing it to collide with the side walls of the pocket and resulting in peeling off of the functional layer.

[0008] The present invention has been made in consideration of such problems, and its purpose is to provide a manufacturing method for a device chip that can prevent a functional layer from peeling off when an impact is applied. [Means for solving the problem]

[0009] In order to solve the above-mentioned problems and achieve the object, a method for manufacturing a device chip of the present invention is a method for manufacturing a device chip in which devices are formed in a plurality of regions partitioned by a plurality of streets formed in a lattice pattern on the surface of a substrate, and a wafer having a film coated on the surfaces of the streets is divided along the streets to manufacture semiconductor device chips that are resistant to shock, the method comprising: a film removing step of removing the film in the region corresponding to the street; a modified layer forming step of, after performing the film removing step, positioning a focusing point of a laser beam having a wavelength that is transparent to the wafer inside the wafer and irradiating the wafer from the back side of the wafer along a region corresponding to the region from which the film has been removed to form a modified layer inside the wafer; and a dividing step of, after performing the modified layer forming step, applying an external force to the wafer to divide the wafer into individual device chips, and in the film removing step, a distance from an end of the street in the width direction to the region from which the film is to be removed is set to a predetermined upper limit value or less so that a step is formed between a region where the substrate is exposed and a region covered with the film at the outer edge of the device chip when individually divided in the dividing step. a focal point of a laser beam having a wavelength absorbent for the film is positioned on the film, a narrow beam that forms circular spots at both ends of the street in the width direction is irradiated along the street, and a wide beam that forms elliptical or rectangular spots is irradiated along the street in the region between the circular spots irradiated with the narrow beam, thereby performing an ablation process to remove the film. The present invention is characterized by the above.

[0010] In the method for producing a device chip of the present invention, the upper limit of the distance is preferably equal to or less than the distance between the edge of the region from which the film has been removed, which is the minimum width capable of suppressing defective division due to an error in the position at which the modified layer is formed, and the device, and the lower limit of the distance is preferably equal to or less than the distance between the edge of the region from which the film has been removed, which is the minimum width capable of suppressing defective division due to an error in the position at which the modified layer is formed The wavelengths that are absorbed by the film It is preferable that the width is at least larger than the sum of the width of the heat-affected area of ​​the laser beam and the error in the position where the modified layer is formed.

[0011] Furthermore, the device chip manufacturing method of the present invention may further include a wafer supporting step of adhering a tape to the back side of the wafer and supporting the outer periphery of the tape with an annular frame prior to the film removal step, and the modified layer forming step may include forming a modified layer inside the wafer through the tape by irradiating a laser beam having a wavelength that is transparent to the wafer and the tape from the tape side of the wafer on which the wafer supporting step has been performed along the street with a focal point positioned inside the wafer. Effect of the Invention

[0012] The present invention can prevent the functional layer from peeling off when an impact is applied. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1 is a perspective view showing an example of a wafer to be processed in a method for manufacturing a device chip according to an embodiment. [Diagram 2] FIG. 2 is a cross-sectional view of a main part of the wafer shown in FIG. [Diagram 3] FIG. 3 is a flowchart showing a flow of the method for manufacturing the device chip according to the embodiment. [Figure 4] FIG. 4 is a perspective view illustrating an example of the film removing step illustrated in FIG. [Diagram 5] FIG. 5 is a cross-sectional view of a main portion of the wafer, showing a state after the film removing step shown in FIG. [Figure 6] FIG. 6 is an explanatory diagram that illustrates a processing line by a laser beam in the film removing step shown in FIG. [Figure 7] FIG. 7 is a side view, partly in section, showing one state of the modified layer forming step shown in FIG. [Figure 8] FIG. 8 is a cross-sectional view of a main part of the wafer, showing a state after the modified layer forming step shown in FIG. [Figure 9] FIG. 9 is a side view, partially in section, showing one state of the dividing step shown in FIG. [Figure 10]FIG. 10 is a side view, partly in section, showing a state subsequent to FIG. 9 of the dividing step shown in FIG. [Figure 11] FIG. 11 is a perspective view showing an example of a device chip manufactured by the manufacturing method of the device chip according to the embodiment. [Figure 12] FIG. 12 is a flowchart showing the flow of a method for manufacturing a device chip according to a modified example. [Figure 13] FIG. 13 is a perspective view showing an example of the wafer supporting step shown in FIG. [Figure 14] FIG. 14 is a side view, partly in section, showing one state of the modified layer forming step shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiment. Furthermore, the components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the configurations described below can be appropriately combined. Furthermore, various omissions, substitutions, or modifications of the configurations can be made without departing from the gist of the present invention.

[0015] [Embodiment] A method for manufacturing a device chip according to an embodiment of the present invention will be described with reference to the drawings. First, the configuration of a wafer 10 that is an object of processing in the embodiment will be described. FIG. 1 is a perspective view showing an example of a wafer 10 that is an object of processing in the method for manufacturing a device chip according to the embodiment. FIG. 2 is a cross-sectional view of a main part of the wafer 10 shown in FIG. 1.

[0016] 1, the wafer 10 is a disk-shaped semiconductor wafer, an optical device wafer, or the like, with silicon, sapphire (Al2O3), gallium arsenide (GaAs), silicon carbide (SiC), or the like serving as a substrate 11. The wafer 10 has a plurality of streets 13 (planned dividing lines) set in a lattice pattern on a surface 12 of the substrate 11, and devices 14 formed in areas defined by the streets 13.

[0017] The device 14 is, for example, an integrated circuit such as an IC or an LSI, or an image sensor such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). The surface of the wafer 10 opposite to the front surface 12 on which the device 14 is formed is referred to as the back surface 15.

[0018] Moreover, the wafer 10 has a film 16 coated on the surface 12 of the substrate 11. The film 16 is a functional layer in which a low dielectric constant insulator coating (hereinafter referred to as a Low-k film) made of an inorganic film such as SiOF, BSG (SiOB), or an organic film such as a polymer film of a polyimide system or parylene system, and a conductor film made of a conductive metal are laminated. The Low-k film is laminated with a conductor film to form the device 14. The conductor film constitutes the circuit of the device 14. For this reason, the device 14 is composed of Low-k films laminated on each other and a conductor film laminated between the Low-k films.

[0019] The wafer 10 is divided along the streets 13 into individual devices 14, and fabricated into device chips 20 (see FIG. 11). In the embodiment, the device chips 20 are square-shaped, but may be rectangular-shaped.

[0020] Next, a method for manufacturing a device chip according to an embodiment will be described. Fig. 3 is a flow chart showing the flow of the method for manufacturing a device chip according to an embodiment. As shown in Fig. 3, the method for manufacturing a device chip according to an embodiment includes a film removing step 101, a modified layer forming step 102, and a dividing step 103.

[0021] (film removal step 101) Fig. 4 is a perspective view showing an example of the film removal step 101 shown in Fig. 3. Fig. 5 is a cross-sectional view of a main part of the wafer 10 showing one state after the film removal step 101 shown in Fig. 3. Fig. 6 is an explanatory diagram showing a schematic diagram of a processing line by the laser beam 30 in the film removal step 101 shown in Fig. 3. The film removal step 101 is a step of exposing the film 16 side of the wafer 10 and removing the film 16 in an area corresponding to the street 13.

[0022] 4, in the film removal step 101 of the embodiment, the film 16 is removed by performing an ablation process using a laser beam 30. The laser beam 30 has a wavelength that is absorbent for the film 16. A laser processing device 35 that performs the laser processing using the laser beam 30 includes a chuck table 36, a laser beam irradiation unit 37, an imaging unit 38, and a moving unit that moves the chuck table 36 and the laser beam irradiation unit 37 relatively.

[0023] In the film removal step 101, first, the back surface 15 side of the wafer 10 is suction-held on the chuck table 36. Next, the moving unit moves the chuck table 36 to a processing position. Next, the imaging unit 38 captures an image of the wafer 10 to detect the streets 13. Once the streets 13 are detected, alignment is performed to align the streets 13 of the wafer 10 with the irradiation portion of the laser beam irradiation unit 37.

[0024] In the film removal step 101, a pulsed laser beam 30 is irradiated from the side of the wafer 10 on which the film 16 is coated, with a focal point 31 positioned on the film 16 of the wafer 10, while the chuck table 36 is moved relative to the laser beam irradiation unit 37. The laser beam 30 is a laser beam with a wavelength that is absorbent for the film 16. In the film removal step 101, the laser beam 30, with the focal point 31 positioned on the film 16 of the wafer 10, is irradiated along the street 13, thereby removing the film 16 in the area corresponding to the street 13.

[0025] 5, in the film removal step 101, a distance 18 from an end of the street 13 in the width direction to a region where the film 16 is to be removed (film removal region 17) is set to a predetermined upper limit or less. In the embodiment, the width dimension of the street 13 is 80 μm, and the predetermined upper limit is, for example, 30 μm. By setting it in this manner, a step is formed in the street 13 between the film removal region 17 where the substrate 11 is exposed by removing the film 16, and the region covered with the film 16.

[0026] The predetermined upper limit of the distance 18 is set within a range in which the width of the film removal region 17 (the distance between the steps of each street 13) satisfies a predetermined condition. When the film removal region 17 is removed widely, even if the position where the modified layer 19 is formed is slightly shifted in the width direction of the street 13 in the modified layer formation step 102 described later, when the wafer 10 is divided using the modified layer 19 as the fracture starting point, division failure can be suppressed. In other words, the predetermined condition includes being able to suppress division failure due to error even when considering the error in the position where the modified layer 19 is formed due to the refractive index of the laser beam 30 of the substrate 11, etc., and the limitations of the optical system of the laser beam irradiation unit 37 that irradiates the laser beam 30. It is preferable that the distance 18 is equal to or less than the distance between the edge of the film removal region 17 with a minimum width that can suppress division failure due to an error in the position where the modified layer 19 is formed by concentrating the laser beam 30 at a desired position inside the substrate 11 and the device 14.

[0027] In the film removing step 101, the distance 18 is set to a predetermined lower limit or more. The predetermined lower limit is a value smaller than a predetermined upper limit and is at least larger than the sum of the width of the heat-affected area of ​​the laser beam 30 and the error in the formation position of the modified layer 19 formed in the modified layer forming step 102 described later in the width direction of the street 13. The heat-affected area is an area where the film 16 is affected by the heat of the laser beam 30 and is altered at the edge of the groove formed when the film 16 is irradiated with the laser beam 30 to perform ablation processing. By setting the distance 18 in consideration of the width of the heat-affected area and the error in the formation position of the modified layer 19, it is possible to suppress the device 14 from being affected by the heat of the laser beam 30 that removes the film 16 and the heat of the laser beam 30 that forms the modified layer 19. In an embodiment, it is preferable to set the distance 18 to, for example, 10 μm or more. Furthermore, by setting the distance 18 as small as possible while taking into consideration the width of the heat-affected area and the error in the position of formation of the modified layer 19, the film 16 can be removed with the maximum removal width, and the film removal area 17 can be brought as close as possible to the device 14 without being affected by the heat of the laser beam 30.

[0028] In the film removal step 101, a narrow beam that forms a circular spot 32 and a wide beam that forms an elliptical or rectangular spot 33 are used, as shown in Fig. 6. More specifically, in the region irradiated with the laser beam 30, both ends in the width direction of the street 13 are irradiated with the narrow beam in one pass. Also, the region between the circular spots 32 irradiated with the narrow beam is irradiated with the wide beam in two passes.

[0029] The laser processing conditions in the film removal step 101 are set, for example, as follows when the thickness of the wafer 10 is 200 μm: Wavelength: 355nm Output: 2W Frequency: 200kHz Feed speed: 500mm / s Wide beam width: 25μm

[0030] (Modified layer forming step 102) Fig. 7 is a side view, partially in cross section, showing one state of the modified layer forming step 102 shown in Fig. 3. Fig. 8 is a cross-sectional view of a main part of the wafer 10 showing one state after the modified layer forming step 102 shown in Fig. 3. The modified layer forming step 102 is performed after the film removing step 101. The modified layer forming step 102 is a step of forming a modified layer 19 inside the wafer 10 along an area corresponding to the area of ​​the wafer 10 from which the film 16 has been removed.

[0031] The modified layer 19 refers to a region in which the density, refractive index, mechanical strength, or other physical properties are different from those of the surrounding area. The modified layer 19 is, for example, a melt-processed region, a crack region, a dielectric breakdown region, a refractive index change region, or a region in which these regions are mixed. The modified layer 19 has a lower mechanical strength, etc. than other parts of the wafer 10.

[0032] 7, in the modified layer forming step 102 of the embodiment, the modified layer 19 is formed by performing stealth dicing processing using a laser beam 30. The laser beam 30 is a laser beam with a wavelength that is transparent to the wafer 10.

[0033] In the modified layer forming step 102, first, the side of the wafer 10 covered with the film 16 is sucked and held on the chuck table 36. Next, the moving unit moves the chuck table 36 to a processing position. Next, the imaging unit 38 captures an image of the wafer 10 to detect the streets 13. Once the streets 13 are detected, alignment is performed to align the streets 13 of the wafer 10 with the irradiation portion of the laser beam irradiation unit 37.

[0034] In the modified layer forming step 102, a pulsed laser beam 30 is irradiated from the back surface 15 side of the wafer 10 with a focal point 31 positioned inside the wafer 10 while the chuck table 36 is moved relative to the laser beam irradiation unit 37. The laser beam 30 is a laser beam with a wavelength that is transparent to the wafer 10. In the modified layer forming step 102, the laser beam 30 with the focal point 31 positioned inside the wafer 10 is irradiated along an area corresponding to the area from which the film 16 has been removed, thereby forming a modified layer 19 along the streets 13 inside the substrate 11, as shown in FIG.

[0035] The laser processing conditions in the modified layer forming step 102 are set, for example, as follows: Wavelength: 1064nm Output: 0.5W Frequency: 100kHz Feed speed: 200mm / s

[0036] (Division step 103) Fig. 9 is a side view, partly in cross section, showing one state of the dividing step 103 shown in Fig. 3. Fig. 10 is a side view, partly in cross section, showing one state of the dividing step 103 shown in Fig. 3 after Fig. 9. The dividing step 103 is performed after the modified layer forming step 102 is performed. The dividing step 103 is a step of applying an external force to the wafer 10 to divide the wafer 10 into individual device chips 20.

[0037] 9, in the dividing step 103 of the embodiment, the expand sheet 40 attached to the back surface 15 of the wafer 10 is expanded in the planar and radial directions, so that the wafer is divided into individual device chips 20 with the modified layer 19 as the fracture starting point. In the dividing step 103, the expand sheet 40 is attached to the back surface 15 of the wafer 10 in advance.

[0038] The expand sheet 40 includes, for example, a base layer made of an expandable synthetic resin, and a glue layer laminated on the base layer and made of an expandable and adhesive synthetic resin. The expand sheet 40 is attached to the back side of a frame 41 having an annular outer periphery. The frame 41 has an opening larger than the outer diameter of the wafer 10 and is made of a material such as metal or resin. The wafer 10 is positioned at a predetermined position in the opening of the frame 41, and the back side 15 of the wafer 10 is attached to the front surface of the expand sheet 40, thereby being fixed to the expand sheet 40 and the frame 41.

[0039] 9 and 10, in the dividing step 103 of the embodiment, an expansion device 50 applies a planar and radial external force to the expanded sheet 40. The expansion device 50 includes a chuck table 51, a clamp section 52, a lifting unit 53, a push-up member 54, and a roller member 55. The push-up member 54 is cylindrical and provided on the outer periphery of and coaxial with the chuck table 51. The roller member 55 is rotatably provided on the same plane as or slightly above the holding surface of the chuck table 51, and at the upper end of the push-up member 54.

[0040] 9, in the dividing step 103, first, the back surface 15 side of the wafer 10 is placed on the holding surface of the chuck table 51 via the expand sheet 40, and the outer periphery of the frame 41 is fixed by the clamp portion 52. At this time, the roller member 55 abuts against the expand sheet 40 between the inner edge of the frame 41 and the outer edge of the wafer 10.

[0041] 10, in the dividing step 103, the chuck table 51 and the push-up member 54 are then raised together by the lifting unit 53. At this time, since the outer periphery of the expanding sheet 40 is fixed by the clamping unit 52 via the frame 41, the portion between the inner edge of the frame 41 and the outer edge of the wafer 10 is expanded in the planar direction. Furthermore, the roller member 55 provided at the upper end of the push-up member 54 reduces friction with the expanding sheet 40.

[0042] In the dividing step 103, as a result of the expansion of the expand sheet 40, a radial tensile force acts on the expand sheet 40. When the radial tensile force acts on the expand sheet 40, as shown in Fig. 10, the wafer 10 to which the expand sheet 40 is attached is divided into individual devices 14 with the modified layers 19 along the streets 13 as the fracture starting points, and is separated into individual device chips 20. After the wafer 10 is divided into the device chips 20, the device chips 20 are picked up from the expand sheet 40 by a known picker, for example, in a pick-up process.

[0043] 11 is a perspective view showing an example of a device chip 20 manufactured by the manufacturing method of a device chip according to the embodiment. In the film removal step 101, in a film removal region 17 where the film 16 of the street 13 (see FIG. 5 etc.) has been removed, the film 16 has been removed such that a distance 18 from an end of the street 13 in the width direction is equal to or less than a predetermined upper limit.

[0044] As a result, the device chips 20 individually divided in the dividing step 103 have a step formed at the outer edge 21 between the film-removed region 17 where the substrate 11 is exposed and the region covered with the film 16. That is, there is a margin in the distance between the edge of the region covered with the film 16 and the outer edge 21 of the device chip 20, which has the effect of suppressing peeling of the film 16.

[0045] Next, a method for manufacturing a device chip according to a modified example will be described. Fig. 12 is a flow chart showing the flow of the method for manufacturing a device chip according to a modified example. As shown in Fig. 12, the method for manufacturing a device chip according to the modified example includes a wafer supporting step 201, a film removing step 202, a modified layer forming step 203, and a dividing step 204.

[0046] (Wafer Support Step 201) Fig. 13 is a perspective view showing an example of the wafer supporting step 201 shown in Fig. 12. The wafer supporting step 201 is performed before the film removing step 202. The wafer supporting step 201 is a step in which a tape 60 is attached to the back surface 15 side of the wafer 10, and the outer periphery of the tape 60 is supported by an annular frame 61.

[0047] The tape 60 is an adhesive tape for fixing the wafer 10 to the frame 61 in the film removing step 202 described later. The tape 60 includes, for example, a base layer made of a synthetic resin, and a glue layer made of an adhesive synthetic resin laminated on the base layer. Note that an expandable sheet having expandability may be used as the tape 60. In this case, the tape 60 may be used as the expandable sheet 40 in the division step 204 described later.

[0048] 13, in the wafer supporting step 201, first, tape 60 is attached to the back side of an annular frame 61. Frame 61 has an opening larger than the outer diameter of wafer 10, and is made of a material such as metal or resin. In the wafer supporting step 201, next, wafer 10 is positioned at a predetermined position in the opening of frame 61, and back side 15 is attached to tape 60. In this way, wafer 10 is fixed to tape 60 and frame 61.

[0049] (Film Removal Step 202) The basic procedure of film removal step 202 of the modified example is similar to that of film removal step 101 of the embodiment. Film removal step 202 of the modified example differs from film removal step 101 of the embodiment in that, when holding the wafer 10 on the chuck table 36 of the laser processing device 35, the back surface 15 side is suction-held to the holding surface of the chuck table 36 via the tape 60, and the outer periphery of the frame 61 is fixed by the clamp portion 39 (see FIG. 14).

[0050] (Modified layer forming step 203) Fig. 14 is a side view, partially in section, showing one state of the modified layer forming step 203 shown in Fig. 12. The modified layer forming step 203 is a step of forming the modified layer 19 inside the wafer 10 through the tape 60.

[0051] 14, in the modified layer forming step 203 of the modified example, similar to the modified layer forming step 102 of the embodiment, the modified layer 19 is formed by performing stealth dicing processing using a laser beam 30. The laser beam 30 is a laser beam having a wavelength that is transparent to the wafer 10 and the tape 60.

[0052] In the modified layer forming step 203, first, the side of the wafer 10 covered with the film 16 is sucked and held on the chuck table 36, and the outer periphery of the frame 61 is fixed by the clamp unit 39. Next, the moving unit moves the chuck table 36 to the processing position. Next, the imaging unit 38 captures an image of the wafer 10 to detect the streets 13. Once the streets 13 are detected, alignment is performed to align the streets 13 of the wafer 10 with the irradiation portion of the laser beam irradiation unit 37.

[0053] In the modified layer forming step 203, a pulsed laser beam 30 is irradiated from the tape 60 side of the wafer 10 with a focal point 31 positioned inside the wafer 10 while the chuck table 36 is moved relative to the laser beam irradiation unit 37. The laser beam 30 has a wavelength that is transparent to the wafer 10 and the tape 60. In the modified layer forming step 203, the laser beam 30 with the focal point 31 positioned inside the wafer 10 is irradiated along an area corresponding to the area from which the film 16 has been removed, thereby forming a modified layer 19 along the streets 13 inside the substrate 11.

[0054] (Division step 204) The dividing step 204 of the modified example is the same procedure as the dividing step 103 of the embodiment, and therefore the explanation will be omitted. If the tape 60 applied in the wafer supporting step 201 has expandability, it may be used as the expandable sheet 40 as it is.

[0055] As described above, in the device chip manufacturing method of the embodiment and the modified example, the width in the width direction of the street 13 in the film removal region 17 where the film 16 (functional layer) of the device chip 20 is removed is made larger than in the conventional method. That is, by making the distance between the end of the region covered with the film 16 and the outer edge 21 of the device chip 20 smaller than in the conventional method, a step is formed in the outer edge 21 of the device chip 20 between the film removal region 17 where the substrate 11 is exposed and the region covered with the film 16. This makes it possible to prevent the functional layer from colliding with the side wall even if the manufactured device chip 20 vibrates in the carrier tape during transportation. It is possible to suppress the film 16 from peeling off even when an impact is applied, which contributes to reducing quality defects.

[0056] The present invention is not limited to the above embodiment. In other words, various modifications can be made without departing from the gist of the present invention. For example, in the film removal steps 101 and 202 of the embodiment and the modification, the film 16 is removed by ablation processing with the laser beam 30, but it may be removed by dicing processing with a blade. [Explanation of symbols]

[0057] 10 wafers 11 Substrate 12 Surface 13th Street 14 Devices 15 Back side 16 membrane 17 Film removal area 18 distance 19 Modification layer 20 Device Chip 21 Outer edge 30 Laser Beam 31 Focus point 40 Expanded Sheet 60 Tape

Claims

1. A method for manufacturing semiconductor device chips, comprising the steps of: dividing a wafer having devices formed in a plurality of regions partitioned by a plurality of streets formed in a lattice pattern on a surface of a substrate, the wafer having a film coated on the surfaces of the streets, into individual devices along the streets, and manufacturing semiconductor device chips resistant to shock, comprising the steps of: a film removing step of removing the film in an area corresponding to the street; a modified layer forming step of forming a modified layer inside the wafer by irradiating a laser beam having a wavelength that is transparent to the wafer from the back side of the wafer along a region corresponding to the region where the film has been removed, after the film removing step is performed; a dividing step of dividing the wafer into individual device chips by applying an external force to the wafer after the modified layer forming step is performed; Equipped with In the film removal step, a distance from an end of the street in the width direction to a region where the film is to be removed is set to a predetermined upper limit value or less so that a step is formed between a region where the substrate is exposed and a region covered with the film at an outer edge of each device chip when the device chip is individually divided in the dividing step; a laser beam having a wavelength absorbent for the film is focused on the film, a narrow beam is applied along the street to form circular spots at both ends of the street in the width direction, and a wide beam is applied along the street to form elliptical or rectangular spots in the area between the circular spots applied by the narrow beam, thereby removing the film by ablation processing. A method for manufacturing a device chip.

2. the upper limit of the distance is equal to or less than a distance between the edge of the region from which the film has been removed and the device, the distance being the minimum width capable of suppressing defective division due to an error in the position at which the modified layer is formed; The lower limit of the distance is at least greater than the sum of the width of a heat-affected area of ​​a laser beam having an absorbent wavelength for the film and an error in the position of the modified layer. The method for producing the device chip according to claim 1 .

3. The method further includes a wafer supporting step of attaching a tape to the back side of the wafer and supporting an outer periphery of the tape by an annular frame before the film removing step, The modified layer forming step is characterized in that a laser beam having a wavelength that is transparent to the wafer and the tape is irradiated along the street from the tape side of the wafer on which the wafer supporting step has been performed, with a focusing point positioned inside the wafer, to form a modified layer inside the wafer through the tape. The method for producing the device chip according to claim 1 or 2.

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