Laser diode element and its manufacturing method

Abstract

To provide a laser diode element with reduced variation in characteristics.SOLUTION: In a manufacturing method of a laser diode element, a nitride semiconductor stack includes a plurality of element regions defined by a plurality of planned cleavage lines and a plurality of planned division lines when viewed from above, the element region includes a plurality of convex portions including a first side surface that is located laterally and connects one planned cleavage line and the other planned cleavage line, a second side surface that is located on the opposite side and connects the planned cleavage line of one side and the other side, and a ridge that is placed between the first side surface and the second side surface and whose longitudinal direction is the direction that intersects the planned cleavage line, and the lower ends of the first side surface and the second side surface are located below the lower surface of the active layer, the first distance from the first side of the planned cleavage line to the ridge is different from the second distance from the second side to the ridge, the plurality of first distances in one element region are equal, the second distances of the plurality of convex portions are equal, each cleavage of the plurality of convex portions starts from the first side surface and reaches the second side surface along the planned cleavage line.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a laser diode device and a method for manufacturing the same. [Background technology]

[0002] Patent Document 1 describes an optically integrated semiconductor light emitting device having a plurality of light emitting device structures on a nitride semiconductor substrate. In the semiconductor light emitting device of Patent Document 1, the shapes of the plurality of light emitting device structures are line symmetrical with respect to the center line of the semiconductor light emitting device. Patent Document 1 also describes a GaN substrate as an example of a nitride semiconductor substrate, and describes that the end face of the semiconductor light emitting device is formed by cleaving the GaN substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-216772 A Summary of the Invention [Problem to be solved by the invention]

[0004] The shape of the end face formed by cleavage may vary depending on the shape of the laminate including the nitride semiconductor substrate. In a laser diode element that emits multiple laser beams, the greater the variation in the shapes of the end faces of the portions corresponding to the optical waveguides of the laser beams, the greater the variation in the characteristics of the multiple laser beams in one laser diode element. [Means for solving the problem]

[0005] The present disclosure includes the following inventions. A step of preparing a laminate including a nitride semiconductor substrate, a first conductive type semiconductor layer provided on the nitride semiconductor substrate, an active layer provided on the first conductive type semiconductor layer, and a second conductive type semiconductor layer provided on the active layer, the laminate includes a plurality of element regions partitioned by a plurality of planned cleavage lines and a plurality of planned division lines intersecting the planned cleavage lines when viewed from above; the element region has a plurality of protrusions including a first side surface and a second side surface connecting one of the planned cleavage lines and the other of the planned cleavage lines, and a ridge disposed between the first side surface and the second side surface in a top view and having a longitudinal direction that intersects with the planned cleavage lines; a lower end of the first side surface and a lower end of the second side surface are located below a lower surface of the active layer, When viewed from above, a first distance from the first side surface to the ridge along the planned cleavage line is different from a second distance from the second side surface to the ridge; a step of forming the first distances in one of the element regions to be equal to each other; a step of cleaving the laminate along the planned cleavage line, wherein cleavage in each of the plurality of protrusions starts from the first side surface and reaches the second side surface; and dividing the laminate along the planned dividing lines.

[0006] A nitride semiconductor substrate; a first conductive type semiconductor layer provided on the nitride semiconductor substrate; an active layer provided on the first conductive type semiconductor layer; a second conductive type semiconductor layer provided on the active layer; A light emitting end surface; A light reflecting end surface; a first side surface and a second side surface connecting the light emitting side end surface and the light reflecting side end surface, and a ridge disposed between the first side surface and the second side surface in a top view and having a longitudinal direction intersecting with the light emitting side end surface; a lower end of the first side surface and a lower end of the second side surface are located below a lower surface of the active layer, a first distance from the first side surface to the ridge at the light emitting end surface is different from a second distance from the second side surface to the ridge in a top view; The first distances between the multiple protrusions are equal. Effect of the Invention

[0007] According to the above-mentioned invention, it is possible to obtain a laser diode element in which the variations in the characteristics of a plurality of laser beams corresponding to a plurality of ridges respectively are reduced. [Brief description of the drawings]

[0008] [Figure 1] 1 is a flowchart showing a method for manufacturing a laser diode element according to an embodiment of the present invention. [Diagram 2] 5A to 5C are schematic top views showing a method for manufacturing a laser diode element according to one embodiment of the present invention. [Diagram 3] FIG. 2 is a schematic top view showing an enlarged portion of the laminate; [Figure 4A] FIG. 4 is a partially enlarged view of FIG. [Figure 4B] 4B is a cross-sectional view taken along line IVB-IVB in FIG. 4A. [Figure 4C] FIG. 4B is a cross-sectional view taken along line IVC-IVC in FIG. 4A. [Figure 5A] FIG. 4 is a schematic top view for explaining the shape of a convex portion. [Figure 5B] FIG. 4 is a schematic top view for explaining the shape of a convex portion. [Figure 6A] 13A and 13B are schematic top views for explaining modified examples of the shape of the convex portion. [Figure 6B] FIG. 6B is a partially enlarged view of FIG. 6A. [Figure 6C] FIG. 6B is a partially enlarged view of FIG. 6A. [Figure 7A] FIG. 13 is a schematic top view for explaining an example having an island portion. [Figure 7B] FIG. 13 is a schematic top view for explaining another example having an island portion. [Figure 8] FIG. 11 is a schematic cross-sectional view for explaining a modified example of the laminate. [Figure 9A] FIG. 13 is a schematic top view for explaining a modified example of the laminate. [Figure 9B] FIG. 9B is a cross-sectional view taken along line VIIB-VIIB in FIG. 9A. [Figure 9C] 9B is a cross-sectional view taken along line VIIC-VIIC in FIG. 9A. [Figure 10] 5A to 5C are schematic top views showing a method for manufacturing a laser diode element according to one embodiment of the present invention. [Figure 11] 5A to 5C are schematic top views showing a method for manufacturing a laser diode element according to one embodiment of the present invention. [Figure 12A] 1 is a schematic top view showing a laser diode element according to an embodiment of the present invention; [Figure 12B] 12B is a cross-sectional view taken along line XB-XB in FIG. 12A. [Figure 13] 1 is a schematic cross-sectional view showing a light-emitting device according to one embodiment of the present invention. [Figure 14] 1 is a graph showing normal probability distributions of threshold current values ​​in Example 1 and the comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In each drawing, the same elements are given the same reference numerals. In addition, each cross-sectional view shows only the state of the cut surface, and members that do not exist on the cut surface are omitted.

[0010] Fig. 1 is a flow chart showing a method for manufacturing a laser diode element according to the present embodiment. As shown in Fig. 1, the method for manufacturing a laser diode element according to the present embodiment includes a laminate preparation step S101, a cleavage step S102, and a division step S103. Fig. 2 to Fig. 12B are schematic diagrams for explaining the method for manufacturing a laser diode element according to the present embodiment.

[0011] (Laminate preparation step S101) First, as shown in FIG. 2, a laminate 100 is prepared. The laminate 100 shown in FIG. 2 is a wafer. The laminate 100 includes a plurality of element regions 400, which are partitioned by a plurality of planned cleavage lines 200 and a plurality of planned division lines 300 intersecting with the planned cleavage lines 200, as viewed from above. In FIG. 2, the lines extending in the left-right direction in the figure are the planned cleavage lines 200, and the lines extending in the up-down direction in the figure are the planned division lines 300. The planned cleavage lines 200 and the planned division lines 300 are both imaginary lines. The planned cleavage lines 200 and the planned division lines 300 intersect, for example, perpendicularly. As viewed from above, the element region 400 is, for example, rectangular. 2, all of the planned cleavage lines 200 and planned division lines 300 are aligned with the outer edge of the laminate 100, but the planned cleavage lines 200 and / or planned division lines 300 may not be present in the portions that are not completed as laser diode elements. The laminate 100 may be a wafer as shown in FIG. 2, or may be divided pieces obtained by dividing a wafer into a plurality of portions.

[0012] Fig. 3 is a schematic top view showing an enlarged portion of the laminate 100. A pattern as shown in Fig. 3 is arranged in each of the element regions 400. In Fig. 3, all of the element regions 400 have the same pattern. Some of the element regions 400 may have different patterns.

[0013] Fig. 4A is a partially enlarged view of Fig. 3. Fig. 4B is a cross-sectional view taken along line IVB-IVB in Fig. 4A. Fig. 4C is a cross-sectional view taken along line IVC-IVC in Fig. 4A. Line IVB-IVB in Fig. 4A coincides with planned cleavage line 200. That is, Fig. 4B is a cross-sectional view taken along planned cleavage line 200.

[0014] 4A to 4C, the stacked body 100 has a nitride semiconductor substrate 11, a first conductive type semiconductor layer 12, an active layer 13, and a second conductive type semiconductor layer 14. The first conductive type semiconductor layer 12 is provided on the nitride semiconductor substrate 11. The active layer 13 is provided on the first conductive type semiconductor layer 12. The second conductive type semiconductor layer 14 is provided on the active layer 13.

[0015] For example, a GaN substrate is prepared as the nitride semiconductor substrate 11. The easy cleavage plane of a nitride semiconductor having a wurtzite structure such as GaN is an m-plane (i.e., a {10-10} plane). In this case, it is preferable to make the planned cleavage line 200 coincide with the m-plane when viewed from above. This allows accurate cleavage along the planned cleavage line 200. In the present disclosure, "coinciding with the m-plane" does not necessarily mean strictly coinciding with the m-plane, but also includes a case where the angle with respect to the m-plane is 0.1 degrees or less. For example, the upper surface of the nitride semiconductor substrate 11 is a c-plane (i.e., a (0001) plane or a (000-1) plane), and the planned cleavage line 200 is made to coincide with the m-plane. In the present disclosure, the c-plane is not limited to a plane strictly coinciding with the (0001) plane or the (000-1) plane, but also includes a plane having an off-angle within a range of ±0.03 to 1 degrees. The shape of the nitride semiconductor substrate 11 is, for example, circular when viewed from above. A substrate having an orientation flat (OF) may be used as the nitride semiconductor substrate 11. If the nitride semiconductor substrate 11 is a substrate having an OF, the planned cleavage line 200 can be aligned with the m-plane based on the OF.

[0016] The semiconductors constituting the first conductive type semiconductor layer 12, the active layer 13, and the second conductive type semiconductor layer 14 can be nitride semiconductors, for example, group III nitride semiconductors. Examples of group III nitride semiconductors include GaN, InGaN, and AlGaN. By epitaxially growing the first conductive type semiconductor layer 12 on the nitride semiconductor substrate 11, and then epitaxially growing the active layer 13 and the second conductive type semiconductor layer 14, their crystal orientations can be substantially aligned. As a result, the planned cleavage line 200 can be aligned with the m-plane of the nitride semiconductor substrate 11, and can also be aligned with the m-plane of the active layer 13 and the like thereon. The first conductive type semiconductor layer 12 is, for example, an n-type semiconductor layer. The second conductive type semiconductor layer 14 is, for example, a p-type semiconductor layer. The nitride semiconductor substrate 11, the first conductive type semiconductor layer 12, the active layer 13, and the second conductive type semiconductor layer 14 may be in direct contact with each other, or another semiconductor layer may be disposed between them. For example, an undoped layer may be disposed between the second conductive type semiconductor layer 14 and the active layer 13. The active layer 13 may have a multiple quantum well structure or a single quantum well structure. Examples of the multiple semiconductor layers formed on the nitride semiconductor substrate 11 include, in order from the nitride semiconductor substrate 11 side, an n-side cladding layer, an n-side optical guide layer, the active layer 13, a p-side electron confinement layer, a p-side optical guide layer, a p-side cladding layer, and a p-side contact layer. For example, the n-side cladding layer is the first conductive type semiconductor layer 12, and the p-side cladding layer is the second conductive type semiconductor layer 14. The multiple semiconductor layers including the first conductive type semiconductor layer 12, the active layer 13, and the second conductive type semiconductor layer 14 may be formed by, for example, a metalorganic chemical vapor deposition (MOCVD) method.

[0017] Each of the multiple element regions 400 has multiple protrusions 20. The number of protrusions 20 in one element region 400 is two or more, and may be three or more. In the case of three or more, the multiple protrusions 20 in one element region 400 have a first protrusion 20a, a second protrusion 20b, and one or more intermediate protrusions 20c. The first protrusion 20a is located on the side where cleavage starts. The second protrusion 20b is located on the side where cleavage ends. In Figs. 4A to 4C, the right side in the figure is the side where cleavage starts, and the left side in the figure is the side where cleavage ends. That is, in the cleavage process described later, cleavage progresses from right to left in the figure. The intermediate protrusion 20c is located between the first protrusion 20a and the second protrusion 20b. The number of intermediate protrusions is, for example, two.

[0018] Each of the multiple protrusions 20 has a first side surface 21, a second side surface 22, and a ridge 23. The first side surface 21 and the second side surface 22 are surfaces that connect one of the two planned cleavage lines 200 that define one element region 400 to the other. In a top view, the first side surface 21 and the second side surface 22 are connected via the two planned cleavage lines 200. In a top view, the outer edge of one protrusion 20 is composed of the two planned cleavage lines 200, the first side surface 21, and the second side surface 22. The first side surface 21 and the second side surface 22 may be inclined with respect to the upper surface of the protrusion 20, and in this case, the outer edge of the protrusion 20 can be defined using the upper end of the first side surface 21 and the upper end of the second side surface 22. In each of the multiple protrusions 20 shown in FIGS. 4A to 4C, the side surface on the right side in the figure is a first side surface 21, and the side surface on the left side in the figure is a second side surface 22.

[0019] The ridge 23 is disposed between the first side surface 21 and the second side surface 22 in a top view. In a top view, the ridge 23 has a longitudinal direction that intersects with the planned cleavage line 200. That is, the ridge 23 has a shape that is long in one direction, and its longitudinal direction is a direction that intersects with the planned cleavage line 200. The longitudinal direction of the ridge 23 may be parallel to the planned division line 300. The ridge 23 is, for example, striped. The ridge 23 can define an optical waveguide. For example, the part of the active layer 13 directly below the ridge 23 and its surrounding area can be used as an optical waveguide. Since one element region 400 has multiple ridges 23, the obtained laser diode element has multiple optical waveguides. For example, the ridge 23 is formed one by one on one convex portion 20. As a result, in the obtained laser diode element, the drive control of the multiple optical waveguides can be performed independently. The ridge 23 is formed, for example, on a part of the upper surface of the second conductive type semiconductor layer 14. The multiple protrusions 20 including the ridge 23 can be formed, for example, by removing parts of the multiple semiconductor layers on the nitride semiconductor substrate 11 using photolithography and etching.

[0020] The lower end of the first side surface 21 and the lower end of the second side surface 22 are located below the lower surface of the active layer 13. As a result, the active layer 13 of the multiple protrusions 20 is divided, and therefore, in the obtained laser diode element, it is possible to individually drive each of the multiple optical waveguides corresponding to the multiple protrusions 20. In addition, since the lower end of the first side surface 21 is located below the lower surface of the active layer 13, in a cleavage process described later, an end face constituting a part of the optical waveguide is formed by cleavage starting from the first side surface 21. Therefore, the shape of the protrusion 20 may affect the shape of the end face constituting a part of the optical waveguide. The lower end of the first side surface 21 and the lower end of the second side surface 22 are located, for example, in the first conductive type semiconductor layer 12. The upper end of the first side surface 21 and the upper end of the second side surface 22 are located, for example, in the second conductive type semiconductor layer 14. The second conductive type semiconductor layer 14 is disposed on each of the multiple protrusions 20. The second conductive type semiconductor layer 14 of one protrusion 20 and the second conductive type semiconductor layer 14 of another protrusion 20 are not connected to each other and are separated from each other. In other words, one element region 400 may be said to have a plurality of second conductive type semiconductor layers 14. Since the second conductive type semiconductor layers 14 are separated in this manner, it becomes possible to independently control the drive of each of the plurality of protrusions 20.

[0021] As shown in Figures 4A and 4B, in the planned cleavage line 200, the distance between the first convex portion 20a and the planned division line 300 can be made smaller than the distance between the second convex portion 20b and the planned division line 300. Such asymmetry of the distance can be used to distinguish between the light emitting side and the light reflecting side. In addition, such asymmetry of the distance can be used to distinguish between the light emitting side end face and the light reflecting side end face in the laser diode element after singulation.

[0022] 5A and 5B are schematic top views for explaining the shape of the protrusion 20. FIG. 5A is a view showing only the protrusion 20, the ridge 23, the planned cleavage line 200, and the planned division line 300 in the same region as FIG. 3, and FIG. 5B is a view showing only the protrusion 20, the ridge 23, the planned cleavage line 200, and the planned division line 300 in the same region as FIG. 4A. In FIG. 5B, the protrusion 20 is shown by a solid line, and the ridge 23 is shown by a dashed line. As shown in FIG. 5B, in the top view, the first distance D1 from the first side surface 21 to the ridge 23 in the planned cleavage line 200 is different from the second distance D2 from the second side surface 22 to the ridge 23. In addition, the multiple first distances D1 in one element region 400 are equal. In FIG. 5B, there are four first distances D1, all of which are equal.

[0023] By making the first distances D1 equal, the distance from the start of cleavage in each protrusion 20 to the portion corresponding to the optical waveguide can be made uniform in the cleavage process described later. This makes it possible to make the shape of the end face formed by the cleavage process described later uniform in the portion corresponding to the optical waveguide of each protrusion 20. As a result, it is possible to reduce the variation in the characteristics of the multiple laser lights corresponding to the multiple ridges of the obtained laser diode element. In addition, it is possible to reduce the variation between the multiple laser diode elements. Note that "the multiple first distances D1 are equal" includes not only that the first distances D1 are strictly the same, but also that the difference between the minimum first distance D1 and the maximum first distance D1 is 1 μm or less.

[0024] Since the second distance D2 is the distance from the ridge 23 to the second side surface 22 in the cleavage direction, it is considered that the influence on cleavage of the portion corresponding to the optical waveguide is smaller than that of the first distance D1. For this reason, the multiple second distances D2 in one element region 400 do not need to be equal. In FIG. 5B, all of the multiple second distances D2 are made equal. It is considered that by making the multiple second distances D2 equal, it is possible to make the shape of the end face formed by the cleavage process closer to uniform.

[0025] When the first side surface 21 and the ridge 23 are close to each other, the flatness of the portion immediately below the ridge 23 of the end surface formed by the cleavage process may deteriorate. For this reason, the first distance D1 is preferably 20 μm or more. On the other hand, the above-mentioned effect of unifying the first distance D1 is more easily obtained as the first side surface 21 and the ridge 23 are closer to each other. For this reason, the first distance D1 is preferably less than 80 μm, and more preferably 50 μm or less. In addition, the first distance D1 is preferably longer than the second distance D2. This makes it possible to reduce the width of the protrusion 20 in the direction along the planned cleavage line 200 while obtaining the effect of unifying the first distance D1. By reducing the width of the protrusion 20, it is possible to reduce the width of the laser diode element obtained. The second distance D2 can be 5 μm or more. The second distance D2 can be less than 50 μm, and is preferably less than 20 μm. This makes it possible to reduce the size of the laser diode element.

[0026] The width of the protrusion 20 in the direction along the planned cleavage line 200 can be, for example, 20 μm or more. The shortest distance between two adjacent protrusions 20 in one element region 400 can be, for example, 1 μm or more, and preferably 2 μm or more. This can reduce the possibility of adjacent protrusions 20 shorting out. The distance between the protrusions 20 refers to the distance between the outer edge of one protrusion 20 and the outer edge of the other protrusion 20 in a top view. In order to further reduce the possibility of shorting out, as shown in FIG. 4B and FIG. 4C, an insulating film 30 is preferably provided on the side of the protrusion 20. The width of the protrusion 20 in the direction along the planned cleavage line 200 can be 150 μm or less, and can be 50 μm or less. This can reduce the size of the laser diode element.

[0027] In top view, the protrusion 20 has a first region located on the first side surface 21 side and a second region located on the second side surface 22 side, with the ridge 23 as a boundary. The protrusion 20 may have an outer portion and an inner portion having different widths in the direction along the planned cleavage line 200. The outer portion is a portion of the protrusion 20 through which the planned cleavage line 200 passes. The inner portion is located between two outer portions through which the two planned cleavage lines 200 that define one element region 400 pass.

[0028] As shown in FIG. 5A, the first region of the first protrusion 20a has a first outer portion 24a through which one of the planned cleavage lines 200 passes, and a second outer portion 24b through which the other planned cleavage line 200 passes. The first region of the first protrusion 20a further has a first inner portion 24c located between the first outer portion 24a and the second outer portion 24b. In FIG. 5A, the first outer portion 24a and the second outer portion 24b are shown by lattice-shaped hatching, and the first inner portion 24c is shown by oblique hatching. With respect to the width in the direction along the planned cleavage line 200, the width of the first inner portion 24c is larger than the width of the first outer portion 24a and the second outer portion 24b. Since the width of the first region of the first protrusion 20a does not affect the distance between adjacent ridges 23 in one element region 400, such a wide first inner portion 24c may be provided in the first region of the first protrusion 20a. In FIG. 5A, the first region of the first protrusion 20a is composed of only the first outer portion 24a, the second outer portion 24b, and the first inner portion 24c. The first region of the first protrusion 20a may have other portions. The first protrusion 20a may not have the first inner portion 24c. The shape of the first protrusion 20a in a top view may be the same as the shape of the intermediate protrusion 20c in a top view.

[0029] With respect to the length in the direction along the longitudinal direction of the ridge 23, the length of the first inner portion 24c is greater than the lengths of the first outer portion 24a and the second outer portion 24b. Also, it is greater than the combined length of the first outer portion 24a and the second outer portion 24b. This allows the first inner portion 24c to be used as a portion where the first conductive layer 41 is mainly provided. The length of the first inner portion 24c can be half or more of the length of the ridge 23, and may be 95% or more. The length of the first inner portion 24c can be smaller than the length of the ridge 23, and may be 98% or less.

[0030] The second region of the second convex portion 20b has a third outer portion 25a through which one of the planned cleavage lines 200 passes, and a fourth outer portion 25b through which the other planned cleavage line 200 passes. The second region of the second convex portion 20b further has a second inner portion 25c located between the third outer portion 25a and the fourth outer portion 25b. In FIG. 5A, the third outer portion 25a and the fourth outer portion 25b are shown by lattice-shaped hatching, and the second inner portion 25c is shown by oblique hatching. With respect to the width in the direction along the planned cleavage line 200, the width of the second inner portion 25c is larger than the width of the third outer portion 25a and the fourth outer portion 25b. For the same reason as the first region of the first convex portion 20a, such a wide second inner portion 25c may be provided in the second region of the second convex portion 20b. In FIG. 5A, the second region of the second convex portion 20b is composed only of the third outer portion 25a, the fourth outer portion 25b, and the second inner portion 25c. The second region of the second convex portion 20b may have other portions. The second convex portion 20b may not have the second inner portion 25c. In that case, the third conductive layer 43 described later may not be provided. The shape of the second convex portion 20b in a top view may be the same as the shape of the intermediate convex portion 20c in a top view.

[0031] With respect to the length in the longitudinal direction of the ridge 23, the length of the second inner portion 25c is greater than each of the lengths of the third outer portion 25a and the fourth outer portion 25b, and is also greater than the combined length of the third outer portion 25a and the fourth outer portion 25b. This allows the second inner portion 25c to be used as a portion where the first conductive layer 41 is mainly provided. The length of the second inner portion 25c can be half or more of the length of the ridge 23, and may be 95% or more. The length of the second inner portion 25c can be less than the length of the ridge 23, and may be 98% or less.

[0032] A first outer portion 24a and a third outer portion 25a may be provided, and a region sandwiched between the first outer portion 24a of one element region 400 and the third outer portion 25a of the other element region 400 facing thereto may be used as a region in which a groove is formed in a cleavage process described later. The one element region 400 and the other element region 400 are, for example, two element regions 400 arranged in the horizontal direction in FIG. 5A. Also, a second outer portion 24b and a fourth outer portion 25b may be provided, and a region sandwiched between the second outer portion 24b of one element region 400 and the fourth outer portion 25b of the other element region 400 facing thereto may be used as a region in which a groove is formed in a cleavage process described later.

[0033] FIG. 6A is a schematic top view for explaining a modified example of the shape of the protrusion 20. As shown in FIG. 6A, the distance between the protrusions 20 on the planned cleavage line 200 may be greater than the shortest distance between the protrusions 20. In FIG. 6A, the first side surface 21 and the second side surface 22 on the planned cleavage line 200 are provided with a recessed shape recessed in a direction toward the ridge 23. This can reduce the deviation between the actual cleavage position in the cleavage process and the planned cleavage line 200. Such a recessed shape may be provided on only one of the first side surface 21 and the second side surface 22. In order to more reliably reduce the deviation between the actual cleavage position and the planned cleavage line 200, it is preferable to provide it on both. In FIG. 6A, the first distance D1 is the distance from the side of the recessed shape closest to the ridge 23 to the ridge 23, and the second distance D2 is the distance from the side of the recessed shape closest to the ridge 23 to the ridge 23.

[0034] 6A has a structure having a middle portion between an outer portion and an inner portion. With respect to the width in the direction along the planned cleavage line 200, the width of the middle portion is larger than the width of the outer portion and smaller than the width of the inner portion.

[0035] 6B is a partially enlarged view of the first protrusion 20a near the planned cleavage line 200. As shown in FIG. 6B, the first protrusion 20a has a middle portion 24d between the first outer portion 24a and the first inner portion 24c. The width W 24a The width W of the first outer portion 24a corresponds to the first distance D1. 24a and the width W of the first inner portion 24c 24c and the width W of the middle part 24d 24d The relationship with W 24a <W 24d <W 24c The relationship between these widths is (W 24d -W 24a )<(W 24c -W 24d 6A, by having the intermediate portion 24d, the portion between the intermediate portion 24d of one element region 400 and the intermediate portion 24d of another element region 400 adjacent thereto across the planned cleavage line 200 can be used as a portion for guiding the progress of cleavage during cleavage. In order to use it as such a guide, the length L of the first outer portion 24a in the length direction of the ridge 23 is 24a and the length L of the intermediate portion 24d 24d The relationship with L 24a <L 24d It is preferable that the length of the first inner portion 24c is longer than the length L of the intermediate portion 24d. 24d It's better if it's longer than that.

[0036] 6C is a partially enlarged view of the second protrusion 20b near the planned cleavage line 200. The second protrusion 20b has a middle portion 25d between the third outer portion 25a and the second inner portion 25c. The width W 25a The width W of the third outer portion 25a is equal to the second distance D2. 25a and the width W of the second inner portion 25c 25c and the width W of the middle part 25d 25dThe relationship with W 25a <W 25d <W 25c The relationship between these widths is (W 25d -W 25a )<(W 25c -W 25d 6A, by having the intermediate portion 25d, the portion between the intermediate portion 25d of one element region 400 and the intermediate portion 25d of another element region 400 adjacent thereto across the planned cleavage line 200 can be used as a portion for guiding the progress of cleavage during cleavage. In order to use it as such a guide, the length L of the third outer portion 25a in the length direction of the ridge 23 is set to 0.05 mm. 25a and the length L of the middle part 25d 25d The relationship with L 25a <L 25d It is preferable that the length of the second inner portion 25c is longer than the length L of the intermediate portion 25d. 25d It's better if it's longer than that.

[0037] As shown in FIG. 6A, the second region of the first protrusion 20a can have an outer portion and an inner portion that have different widths in the direction along the planned cleavage line 200. The second region of the first protrusion 20a does not have an intermediate portion, and the outer portion and the inner portion are directly connected. The width of the outer portion of the second region of the first protrusion 20a is equal to the second distance D2. The difference between the width of the outer portion and the width of the inner portion in the second region of the first protrusion 20a may be the same as the difference between the width of the first outer portion 24a and the width of the intermediate portion 24d in the first region of the first protrusion 20a. With respect to the length in the direction along the longitudinal direction of the ridge 23, the length of the outer portion of the second region of the first protrusion 20a can be the same as the length of the first outer portion 24a.

[0038] As shown in FIG. 6A, the first region of the second protrusion 20b can have an outer portion and an inner portion that have different widths in the direction along the planned cleavage line 200. The first region of the second protrusion 20b does not have an intermediate portion, and the outer portion and the inner portion are directly connected. The width of the outer portion of the first region of the second protrusion 20b is equal to the first distance D1. The difference between the width of the outer portion and the width of the inner portion in the first region of the second protrusion 20b may be the same as the difference between the width of the third outer portion 25a and the width of the intermediate portion 25d in the second region of the second protrusion 20b. With respect to the length in the direction along the longitudinal direction of the ridge 23, the length of the outer portion of the first region of the second protrusion 20b can be the same as the length of the third outer portion 25a.

[0039] As shown in FIG. 6A, the first region of the intermediate convex portion 20c can have an outer portion and an inner portion whose widths in the direction along the planned cleavage line 200 are different from each other. The first region of the intermediate convex portion 20c does not have an intermediate portion, and the outer portion and the inner portion are directly connected. The width of the outer portion of the first region of the intermediate convex portion 20c is equal to the first distance D1. The difference between the width of the outer portion and the width of the inner portion in the first region of the intermediate convex portion 20c may be the same as the difference between the width of the first outer portion 24a of the first convex portion 20a and the width of the intermediate portion 24d. With respect to the length in the direction along the longitudinal direction of the ridge 23, the length of the outer portion of the first region of the intermediate convex portion 20c can be the same as the length of the first outer portion 24a of the first convex portion 20a.

[0040] As shown in FIG. 6A, the second region of the intermediate convex portion 20c can have an outer portion and an inner portion whose widths in the direction along the planned cleavage line 200 are different from each other. The second region of the intermediate convex portion 20c does not have an intermediate portion, and the outer portion and the inner portion are directly connected. The width of the outer portion of the second region of the intermediate convex portion 20c is equal to the second distance D2. The difference between the width of the outer portion and the width of the inner portion in the second region of the intermediate convex portion 20c may be the same as the difference between the width of the third outer portion 25a of the second convex portion 20b and the width of the intermediate portion 25d. With respect to the length in the direction along the longitudinal direction of the ridge 23, the length of the outer portion of the second region of the intermediate convex portion 20c can be the same as the length of the third outer portion 25a of the second convex portion 20b.

[0041] As shown in Fig. 6A, the length of the outer portion may be the same in all the protrusions 20. In Fig. 6A, an intermediate portion is provided only in the first region of the first protrusion 20a and the second region of the second protrusion 20b located between the planned dividing line 300 and the ridge 23, and no intermediate portion is provided in the other regions. This makes it possible to reduce the width of the laser diode element obtained.

[0042] 7A is a schematic top view for explaining an example having an island portion 26. FIG. 7A is a partial enlarged view of the vicinity of the planned cleavage line 200 of the second protruding portion 20b. In FIG. 7A, the insulating film 30 and the like are omitted, as in FIG. 6C. As shown in FIG. 7A, the element region 400 has an island portion 26 separated from the second protruding portion 20b between the second inner portion 25c and at least one planned cleavage line 200. The island portion 26 can be formed, for example, by removing a part of a plurality of semiconductor layers on the nitride semiconductor substrate 11 using photolithography and etching.

[0043] By providing the island portion 26, it is possible to reduce ripples occurring in the far-field pattern (FFP) of the obtained laser diode element. Other convex portions 20 are arranged on the sides of the second region of the first convex portion 20a and the intermediate convex portion 20c, but no convex portions are arranged on the sides of the second region of the second convex portion 20b. In other words, the second regions of the first convex portion 20a and the intermediate convex portion 20c are sandwiched between the respective ridges and other convex portions 20, but the second region of the second convex portion 20b is not in such a positional relationship. Therefore, particularly in a structure in which the second distance D2 is smaller than the first distance D1, the amount of light leaking from the second region of the second convex portion 20b when the obtained laser diode element is driven tends to be greater than the amount of light leaking from the first region of the second convex portion 20b. Also, the amount of light leaking from the second region of the second convex portion 20b tends to be greater than the amount of light leaking from the first region and the second region of the first convex portion 20a and the intermediate convex portion 20c, respectively. These tendencies become more pronounced by providing the second inner portion 25c. Therefore, by providing the island portion 26, the light leaking from the second region of the second protrusion 20b can be absorbed or scattered while maintaining the second distance D2. Therefore, the ripples generated in the FFP of the obtained laser diode element can be reduced.

[0044] In order to more efficiently reduce the ripples of the FFP, the island portion 26 is preferably provided in the vicinity of the planned cleavage line 200. The shortest distance between the island portion 26 and the planned cleavage line 200 can be, for example, 3 μm or less. The island portion 26 is provided so as to be located between the light emitting side end face and the second inner portion 25c in the obtained laser diode element. The island portion 26 may be provided so as to be located between the light reflecting side end face and the second inner portion 25c. One element region 400 may have the island portion 26 between one planned cleavage line 200 and the second inner portion 25c, and between the other planned cleavage line 200 and the second inner portion 25c. The island portion 26 may be provided for the second convex portion 20b that does not have the second inner portion 25c. In this case, the island portion 26 is disposed between the second convex portion 20b and the planned division line 300 adjacent thereto. The island portion 26 may be provided between the first inner portion 24c of the first convex portion 20a and the planned cleavage line 200. If the purpose is to reduce ripples in the FFP of the laser light emitted by the second convex portion 20b, the island portion 26 may not be provided between the first inner portion 24c of the first convex portion 20a and the planned cleavage line 200, but may be provided only between the second inner portion 25c of the second convex portion 20b and the planned cleavage line 200. In addition, the island portion 26 does not need to be provided between the intermediate convex portion 20c and the planned cleavage line 200.

[0045] If a groove formed using a laser scriber or the like in a cleavage process described later reaches the island portion 26, there is a possibility that a short circuit will occur between the p-type semiconductor layer and the n-type semiconductor layer of the island portion 26. For this reason, it is preferable to provide the island portion 26 separated from the second protrusion 20b. The lower end of the island portion 26 is located below the lower surface of the active layer 13. The shortest distance between the island portion 26 and the second inner portion 25c can be made larger than the shortest distance between the island portion 26 and the planned cleavage line 200.

[0046] The width of the island portion 26 in the direction along the planned cleavage line 200 may be smaller than the width of the second inner portion 25c. For example, when a line parallel to the planned cleavage line 200 is superimposed on the island portion 26 in a top view, the width of the island portion 26 can be set so that the distance between the end of the island portion 26 farthest from the ridge 23 on this line and the ridge 23 is equal to the distance between the first side surface 21 of the first convex portion 20a and the ridge 23 on this line. This is expected to reduce the difference in FFP between the laser light emitted from the first convex portion 20a and the laser light emitted from the second convex portion 20b in the obtained laser diode element. Note that the difference between these distances being equal also includes a difference between these distances being 1 μm or less. The width of the island portion 26 can be 95% or less of the width of the second inner portion 25c, and can further be 40% or less. The width of the island portion 26 can be set to 20% or more of the width of the second inner portion 25c, and can further be set to 30% or more.

[0047] There may be only one island 26, but as shown in FIG. 7A, the island 26 may have a first portion 26a and a second portion 26b. In a top view, the second portion 26b is separated from the first portion 26a and is located between the first portion 26a and the second inner portion 25c. Since the island 26 is thus composed of a plurality of portions, the probability of light reflection increases due to the difference in refractive index between each portion and its outside (e.g., the insulating film 30 or air, etc.), so that the ripples of the FFP can be reduced more effectively. At least the portions of the side surface of the first portion 26a and the side surface of the second portion 26b that face each other are preferably located below the lower surface of the active layer 13. This can further reduce the ripples of the FFP. The shortest distance between the first portion 26a and the second portion 26b is, for example, 2 μm or less. The shortest distance between the first portion 26a and the second portion 26b is, for example, 0.5 μm or more.

[0048] In FIG. 7A, the first portion 26a and the second portion 26b are separated by a wavy groove, and the bottom of the groove is located below the lower surface of the active layer 13. It can be said that the wavy groove has a first component side and a second component side that have different inclination angles with respect to the resonator surface when viewed from above. By having the first component side and the second component side, it is possible to refract the leaked light in two different directions. Therefore, it is possible to reduce the concentration of the refracted leaked light in a specific direction. The shape of the groove when viewed from above can also be rephrased as the shape of the parts of the outer edge of the first portion 26a and the outer edge of the second portion 26b that face each other when viewed from above. The groove separating the first portion 26a and the second portion 26b does not have to be wavy.

[0049] In Fig. 7A, the first side surface 21 and a part of the second side surface 22 of the second protrusion 20b have a shape that extends toward the ridge 23. In this way, by providing a downwardly recessed recess near the ridge 23 on the light emission side, it is possible to further reduce ripples occurring in the FFP of the obtained laser diode element. When a groove is provided in the second protrusion 20b in this way, a groove that separates the first portion 26a and the second portion 26b may be disposed on an extension line of the groove. In Fig. 7A, the groove provided in the second protrusion 20b has a wavy shape in top view.

[0050] FIG. 7B is a schematic top view for explaining another example having an island portion 26. In FIG. 7B, in a top view, a third distance between the end of the island portion 26 farthest from the ridge 23 of the second convex portion 20b and the ridge 23 is equal to a fourth distance between the end of the second inner portion 25c farthest from the ridge 23 of the second convex portion 20b and the ridge 23. The third distance and the fourth distance being equal includes a case where the difference between their widths is 1 μm or less. The third distance may be greater than the fourth distance. When the third distance is equal to or greater than the fourth distance, the ripple of the FFP of the laser light emitted from the second convex portion 20b in the obtained laser diode element can be further reduced. When the obtained laser diode element is mounted and sealed in a package, the occurrence rate of ripple of the FFP of the laser light emitted by the laser diode element may be increased after sealing compared to before mounting. In this case, by making the third distance equal to or greater than the fourth distance, it is possible to more reliably reduce the rate of occurrence of ripples in the FFP of the laser light emitted from the second protrusion 20b after the package is sealed.

[0051] As shown in FIG. 7B, the element region 400 can have an island portion 27 separated from the first protruding portion 20a between the first inner portion 24c and at least one planned cleavage line 200. By providing the island portion 27, ripples occurring in the FFP of the obtained laser diode element can be reduced. The island portion 27 can be formed, for example, by removing a part of a plurality of semiconductor layers on the nitride semiconductor substrate 11 using photolithography and etching. In FIG. 7B, in a top view, a fifth distance between the end of the island portion 27 farthest from the ridge 23 of the first protruding portion 20a and the ridge 23 is equal to a sixth distance between the end of the first inner portion 24c farthest from the ridge 23 of the first protruding portion 20a and the ridge 23. The fifth distance being equal to the sixth distance includes a case where the difference between their widths is 1 μm or less. The fifth distance may be greater than the sixth distance. By making the fifth distance equal to or greater than the sixth distance, it is possible to more reliably reduce the rate of occurrence of ripples in the FFP of the laser light emitted from the first protrusion 20a after the package is sealed.

[0052] 7B, a third distance between the end of island portion 26 farthest from ridge 23 of second convex portion 20b and ridge 23 is equal to a fifth distance between the end of island portion 27 farthest from ridge 23 of first convex portion 20a and ridge 23. This is expected to reduce the difference in FFP between the laser light emitted from first convex portion 20a and the laser light emitted from second convex portion 20b in the obtained laser diode element. Note that the third distance being equal to the fifth distance includes a case where the difference between these distances is 1 μm or less.

[0053] In FIG. 7B, the first distance D1 from the first side surface 21 to the ridge 23 and the second distance D2 from the second side surface 22 to the ridge 23 at the planned cleavage line 200 are equal. The first distance D1 and the second distance D2 being equal includes the case where the difference between these distances is 1 μm or less. When the first distance D1 and the second distance D2 are equal, it is preferable to provide both the island portion 26 and the island portion 27. This makes it possible to reduce the difference in FFP between the laser light emitted from the first protrusion 20a and the laser light emitted from the second protrusion 20b in the obtained laser diode element, compared to the case where only one of the island portion 26 and the island portion 27 is provided. The shape of the island portion 26 and the island portion 27 may be a shape having a first portion and a second portion as shown in FIG. 7A.

[0054] In top view, the protrusion 20 has a first region located on the first side surface 21 side and a second region located on the second side surface 22 side, with the ridge 23 as a boundary. As shown in FIGS. 4A and 4C, the element region 400 has a plurality of first conductive layers 41 arranged above the ridges 23 and the first regions of the plurality of protrusions 20. The first conductive layers 41 are electrically connected to the second conductivity type semiconductor layer 14. The first conductive layer 41 may also be formed in the second region. When the protrusion 20 has an outer portion and an inner portion as described above, the first conductive layer 41 can be provided mainly in the inner portion.

[0055] The first conductive layer 41 can be formed by stacking one or more layers of metals or alloys such as Ni, Rh, Cr, Au, W, Pt, Ti, Al, and Pd. The first conductive layer 41 is formed by stacking, for example, a Ni layer, a Pd layer, an Au layer, a Pt layer, an Au layer, and a Pt layer in this order. As shown in FIG. 4A and FIG. 4C, when the second conductive layer 42 is provided on the first conductive layer 41, it is preferable that the outermost surface of the first conductive layer 41 does not contain Au. This can reduce the possibility that the bonding material will adhere to the outermost surface of the first conductive layer 41 when a bonding material containing Au such as AuSn is used as a conductive bonding material for electrically connecting the laser diode element to the conductive layer of the submount. Therefore, it is possible to reduce the possibility that adjacent protrusions 20 will be short-circuited via the first conductive layer 41. The outermost surface of the first conductive layer 41 is preferably made of a material that functions as a barrier layer against the metal bonding material that bonds the laser diode element, such as a Pt layer.

[0056] In the top view, the shapes of the first conductive layer 41 of the plurality of convex portions 20 may not be the same. In this embodiment, all the element regions 400 are arranged in the same direction. That is, in FIG. 4A, the lower side in the figure is the light emitting side with the planned cleavage line 200 as the boundary, and the upper side in the figure is the light reflecting side. In FIG. 4A, the shapes of the first conductive layer 41 of the light emitting side part and the light reflecting side part of the first convex portion 20a and the second convex portion 20b are line symmetrical with respect to the planned cleavage line 200. On the other hand, the shapes of the first conductive layer 41 of the light emitting side part and the light reflecting side part of the intermediate convex portion 20c are not line symmetrical with respect to the planned cleavage line 200. In this way, in one or more of the convex portions 20, the shapes of the first conductive layer 41 of the light emitting side part and the light reflecting side part may be asymmetrical with respect to the planned cleavage line 200. This makes it easy to determine which is the light emitting side part or the light reflecting side part. In addition, it is preferable that the shape of the first conductive layer 41 in a top view is asymmetric when rotated 180 degrees around the center of the element region 400. This makes it easy to distinguish which is the light-emitting end face and which is the light-reflecting end face in the obtained laser diode element.

[0057] As shown in FIG. 4C, an upper electrode 50 may be provided between the first conductive layer 41 and the second conductive type semiconductor layer 14. In FIG. 4C, a ridge 23 is formed on a part of the upper surface of the second conductive type semiconductor layer 14, and the upper electrode 50 is formed in contact with the upper surface of the ridge 23. The upper electrode 50 is, for example, a p-electrode. The upper electrode 50 may be, for example, a single layer or multilayer film of a conductive oxide containing at least one selected from metals or alloys such as Ni, Rh, Cr, Au, W, Pt, Ti, and Al, Zn, In, and Sn. An example of the conductive oxide may be, for example, ITO (Indium Tin Oxide). As shown in FIG. 4A and FIG. 4B, the upper electrode 50 may be formed, for example, avoiding the planned cleavage line 200.

[0058] The element region 400 may have a plurality of second conductive layers 42 arranged above the respective first conductive layers 41. The second conductive layers 42 are electrically connected to the first conductive layers 41. As shown in FIG. 4A, the width of the second conductive layers 42 in the direction along the planned cleavage line 200 is preferably smaller than the width of the first conductive layers 41. This allows the shortest distance between the second conductive layers 42 of adjacent protrusions 20 to be greater than the shortest distance between the first conductive layers 41 of adjacent protrusions 20, thereby reducing the possibility of adjacent protrusions 20 being short-circuited. In particular, such an arrangement is preferable when performing flip-chip bonding to mount the second conductive layers 42 on a submount or the like.

[0059] 3 and 4A, the outer edge of the second conductive layer 42 is located inside the outer edge of the first conductive layer 41 in top view. Also, the outer edge of the second conductive layer 42 is located inside the outer edge of the first region in top view. In this way, it is preferable to dispose the second conductive layer 42 so as to avoid above the ridge 23. If the second conductive layer 42 is formed on a step such as the ridge 23, there is a possibility that unevenness in film thickness or partial separation will occur, but by forming the second conductive layer 42 on a relatively flat surface that does not include the ridge 23, the possibility of these occurring can be reduced.

[0060] The second conductive layer 42 can be formed by stacking one or more layers of metals or alloys such as Ni, Rh, Cr, Au, W, Pt, Ti, Al, etc. The second conductive layer 42 is formed by stacking, for example, a Ti layer, a Pt layer, and an Au layer in this order. It is preferable that the outermost surface of the second conductive layer 42 is a layer containing Au, such as an Au layer, so that it can be easily bonded to a conductive bonding material such as AuSn.

[0061] In FIG. 4A, the first conductive layer 41 arranged above the second protrusion 20b is also arranged above the second region of the second protrusion 20b. The element region 400 can have a third conductive layer 43 arranged above the second region of the second protrusion 20b. The third conductive layer 43 can be formed by stacking one or more layers of metals or alloys such as Ni, Rh, Cr, Au, W, Pt, Ti, and Al. The third conductive layer 43 is formed by stacking, for example, a Ti layer, a Pt layer, and an Au layer in this order. The third conductive layer 43 may be formed together with the second conductive layer 42 with the same material and film thickness as the second conductive layer 42. As shown in FIG. 4A and FIG. 4B, the first conductive layer 41, the second conductive layer 42, and the third conductive layer 43 can be formed to avoid the planned cleavage line 200.

[0062] In FIG. 3 and FIG. 4A, the outer edge of the third conductive layer 43 is located inside the outer edge of the first conductive layer 41 in a top view. Also, the outer edge of the third conductive layer 43 is located inside the outer edge of the second region of the second protrusion 20b in a top view. In this way, it is preferable to arrange the third conductive layer 43 so as to avoid above the ridge 23. If the third conductive layer 43 is formed on a step such as the ridge 23, there is a possibility that the film thickness may become uneven or that partial separation may occur. However, by forming the third conductive layer 43 on a relatively flat surface that does not include the ridge 23, the possibility of such occurrence can be reduced. By providing the third conductive layer 43, heat generated when driving the obtained laser diode element can be dissipated to a support or the like described later via the third conductive layer 43, thereby improving heat dissipation.

[0063] The maximum width of the first protrusion 20a in the direction along the planned cleavage line 200 can be made larger than the maximum width of the intermediate protrusion 20c in the direction along the planned cleavage line 200. As a result, the width of the external connection part such as the second conductive layer 42 in the direction along the planned cleavage line 200 in the first protrusion 20a can be made larger than the width of the external connection part in the intermediate protrusion 20c. As a result, it is possible to easily contact the external connection part of the first protrusion 20a with an inspection tool such as an inspection needle of a probe device used for inspection before mounting. For the same reason as the first protrusion 20a, the maximum width of the second protrusion 20b in the direction along the planned cleavage line 200 can be made larger than the maximum width of the intermediate protrusion 20c in the direction along the planned cleavage line 200. For example, in terms of the width in the direction along the planned cleavage line 200, the width of the second conductive layer 42 of the first convex portion 20a and the width of the third conductive layer 43 are larger than the width of the second conductive layer 42 of the intermediate convex portion 20c and the width of the second conductive layer 42 of the second convex portion 20b.

[0064] FIG. 8 is a schematic cross-sectional view for explaining a modified example of the laminate 100. As shown in FIG. 8, the second conductive layer 42 may be disposed above the ridge 23. In this case, the third conductive layer 43 may not be provided. In order to further reduce the width of the laser diode element obtained, such an arrangement may be advantageous. As shown in FIG. 8, the second conductive layer 42 disposed on the intermediate convex portion 20c may have one end coincident with one end of the first conductive layer 41. By aligning the end of the second conductive layer 42 located between the ridge 23 and the second side surface 22 with the end of the first conductive layer 41, the area of ​​the second conductive layer 42 can be made larger than in the case where this is not the case. This can improve the efficiency of dissipating heat generated when driving the laser diode element obtained to a support or the like described later via the second conductive layer 42.

[0065] As shown in FIG. 7B, when the second conductive layer 42 is disposed above the ridge 23, the widths of the second conductive layers 42 provided on the plurality of convex portions 20 along the planned cleavage line 200 can all be equal in top view. The lengths of the second conductive layers 42 provided on the plurality of convex portions 20 along the planned division line 300 can all be equal in top view. The widths or lengths of the plurality of second conductive layers 42 being equal include not only that they are strictly the same, but also that the difference between the maximum and minimum values ​​of the plurality of widths or lengths is 1 μm or less. As shown in FIG. 7B, when the second conductive layer 42 is disposed above the ridge 23, the second distance D2 may be equal to the first distance D1. The phrase "the second distance D2 is equal to the first distance D1" includes not only that they are strictly the same, but also that the difference between the first distance D1 and the second distance D2 is 1 μm or less. In this case, the plurality of first distances D1 in one element region 400 are equal. This makes it possible to reduce variations in the characteristics of the laser beams emitted from the respective ridges of the resulting laser diode element, and also to reduce variations among the laser diode elements.

[0066] Fig. 9A is a schematic top view for explaining a modified example of the laminate 100. Fig. 9B is a cross-sectional view taken along line VIIB-VIIB in Fig. 9A. Fig. 9C is a cross-sectional view taken along line VIIC-VIIC in Fig. 9A. Fig. 9A is an enlarged view of a portion of the element region 400 that is the light emission side of the first protrusion 20a and its vicinity. The modified examples shown in Figs. 9A to 9C may be adopted in portions other than those shown in Fig. 9A, i.e., protrusions 20 other than the first protrusion 20a or portions that are the light reflection side.

[0067] 9A is substantially the same as the shape of the first protrusion 20a shown in Fig. 6A, but differs in that parts of the first side surface 21 and the second side surface 22 have a wavy line shape toward the ridge 23 near the planned cleavage line 200. In this manner, by providing a downwardly recessed portion near the ridge 23 on the light emission side, it is possible to reduce ripples occurring in the far field pattern (FFP) of the obtained laser diode element.

[0068] 9A to 9C, the insulating film 30 includes a first insulating film 31 and a second insulating film 32. In this manner, the insulating film 30 may include two or more layers made of different materials and / or formed at different positions. The first insulating film 31 is provided in contact with the ridge 23. In the top view, the width of the planned cleavage line 200 is smaller than the width of the first protrusion 20a.

[0069] As shown in FIG. 9A and FIG. 9C, the first insulating film 31 may be formed not only on the upper surface of the protrusion 20 but also on the surface of the first conductive type semiconductor layer 12 that is continuous from the side surface of the protrusion 20. Since the outer edge of the first insulating film 31 is not located between the first conductive layer 41 and the first side surface 21, the distance between the first conductive layer 41 and the first side surface 21 can be made smaller than in the case where the outer edge is not located between the first conductive layer 41 and the first side surface 21. In FIG. 9A, the first region of the protrusion 20 has an inner part where the main part of the first conductive layer 41 is located and a narrow part that is narrower than the inner part. The outer edge of the inner part has a first side 21a that is connected to the narrow part and extends in a direction away from the ridge 23, and a second side 21b that is connected to the first side and extends along a direction intersecting the planned cleavage line 200. By locating the outer edge of the first insulating film 31 between the second side 21b and the first conductive layer 41, an increase in the width of the protrusion 20 can be suppressed. Furthermore, by disposing a part of the outer edge of the first insulating film 31 outside the protrusion 20 so that the outer edge of the first insulating film 31 is not located between the first side 21a and the first conductive layer 41, it is possible to reduce the distance between the first side 21a and the first conductive layer 41. This makes it possible to increase the area of ​​the first conductive layer 41.

[0070] The second insulating film 32 is formed at a position separated from the ridge 23. That is, the second insulating film 32 is not in contact with the ridge 23. The second insulating film 32 can cover the surface of the first insulating film 31 and the surface of the semiconductor layer such as the second conductive type semiconductor layer 14 exposed from the first insulating film 31. When the upper surface side of the laminate 100 is flip-chip mounted on a submount or the like, it is preferable to cover the insulating film 30 except for the upper surface of the ridge 23 in a top view like this. This can reduce the possibility of the protrusion 20 being short-circuited. The insulating film 30 can be formed of a single layer film or a multilayer film of an oxide or nitride of, for example, Si, Al, Zr, Ti, Nb, Ta, or the like. For example, the refractive index of the first insulating film 31 is higher than that of the second insulating film 32.

[0071] As shown in FIG. 4C, the stack 100 can have one or more lower electrodes 60 arranged on the lower surface side thereof. In FIG. 4C, the lower electrode 60 is formed on the lower surface of the nitride semiconductor substrate 11. The lower electrode 60 is, for example, an n-electrode. There may be only one lower electrode 60 in one element region 400. Having one lower electrode 60 is advantageous for miniaturizing the laser diode element. The lower electrode 60 can be formed by stacking one or more layers of metals or alloys such as Ni, Rh, Cr, Au, W, Pt, Ti, and Al.

[0072] (Cleavage process S102) Next, as shown in FIG. 10, the laminate 100 is cleaved along the planned cleavage line 200. Cleavage in each of the multiple protrusions 20 starts from the first side surface 21 and reaches the second side surface 22. That is, cleavage progresses from right to left in FIG. 10. Cleavage can be performed, for example, by first forming a groove in a part of the planned cleavage line 200 using a laser scribing device, and then pressing the laminate 100 with a blade. The groove formed using the laser scribing device may be formed at a position overlapping the planned cleavage line 200, between the first side surface 21 of one element region 400 and the second side surface 22 of the other element region 400 facing it.

[0073] The groove formed by using a laser scribing device may be formed only outside the element region 400. For example, a groove extending along the planned cleavage line 200 may be formed at one end of the laminate 100, which is a wafer or a divided piece obtained by dividing a wafer, and the laminate 100 may be cleaved by an external force along the groove. In this case, cleavage starts from the position where the groove is formed. For this reason, the groove is provided at an end closer to the first convex portion 20a than the second convex portion 20b. Grooves may be formed at both of the two opposing ends of the laminate 100. In this case, the position where cleavage starts can be adjusted depending on the position where the external force is applied. The groove used for cleavage formed by using a laser scribing device or the like can be formed, for example, on the surface of the laminate 100 on the side where the ridge 23 is located. The length of the groove along the planned cleavage line 200 can be about 1 to 10 mm. The length of the groove may be, for example, 1 to 3 times the width of one element region 400. The depth of the groove can be, for example, 10 to 100 μm. The cleavage position coincides with the planned cleavage line 200 when viewed from above, for example. Since cleavage does not necessarily occur at a targeted position, the cleavage position does not have to completely coincide with the planned cleavage line 200. In FIG. 10, the cleavage proceeds from right to left in the figure, but it may be reversed, in which case the left side of the ridge 23 in the figure becomes the first side surface, and the right side of the ridge 23 in the figure becomes the second side surface.

[0074] By carrying out the cleavage step, a light emitting side end face 71 and a light reflecting side end face 72 are formed. In Fig. 10, two faces obtained as a result of cleavage along one planned cleavage line 200 are one of the light emitting side end face 71 and the other of the light reflecting side end face 72. After the cleavage step, a light reflecting film may be formed on each of the light emitting side end face 71 and the light reflecting side end face 72.

[0075] (Dividing process S103) Next, as shown in FIG. 11, the laminate 100 is divided along the planned dividing lines 300. This allows the laser diode element 500 to be obtained. The division can be performed, for example, by first forming grooves at positions overlapping the planned dividing lines 300 using a laser scriber, and then pressing the laminate 100 with a blade. The dividing grooves formed using a laser scriber are formed, for example, on the surface of the laminate 100 on the side where the ridge 23 is located. When the element region 400 has an island portion 26, if the dividing grooves reach the island portion 26, there is a possibility that the p-type semiconductor layer and the n-type semiconductor layer of the island portion 26 will be short-circuited. Since the p-type semiconductor layer and the active layer of the second protrusion 20b are not connected to the p-type semiconductor layer and the active layer of the island portion 26, the possibility that the p-type semiconductor layer and the n-type semiconductor layer of the second protrusion 20b will be short-circuited by the dividing grooves can be reduced. Similarly, for the island portion 27, the p-type semiconductor layer and active layer of the island portion 27 are not connected to the p-type semiconductor layer and active layer of the first protruding portion 20a, so that the possibility of the p-type semiconductor layer and the n-type semiconductor layer of the first protruding portion 20a being short-circuited by the dividing groove can be reduced. The dividing step separates the multiple element regions 400 one by one. The order of the dividing step and the cleaving step can be reversed. When forming a light reflective film, the order of the present embodiment in which the dividing step is performed after the cleaving step can be used because it can improve the working efficiency.

[0076] By the above steps, a laser diode element can be obtained in which the variations in the characteristics of the plurality of laser beams corresponding to the plurality of ridges are reduced.

[0077] (laser diode element 500) 12A and 12B show a laser diode element 500 of this embodiment. FIG. 12A is a top view, and FIG. 12B is a cross-sectional view taken along line XB-XB in FIG. 12A. The laser diode element 500 includes a nitride semiconductor substrate 11, a first conductive type semiconductor layer 12, an active layer 13, a second conductive type semiconductor layer 14, a light emitting side end face 71, a light reflecting side end face 72, and a plurality of convex portions 20. The first conductive type semiconductor layer 12 is provided on the nitride semiconductor substrate 11, the active layer 13 is provided on the first conductive type semiconductor layer 12, and the second conductive type semiconductor layer 14 is provided on the active layer 13. The convex portion 20 includes a first side surface 21 and a second side surface 22 connecting the light emitting side end face 71 and the light reflecting side end face 72, and a ridge 23. The ridge 23 is disposed between the first side surface 21 and the second side surface 22 in a top view, and the direction intersecting with the light-emitting end face 71 is the longitudinal direction. The lower end of the first side surface 21 and the lower end of the second side surface 22 are located below the lower surface of the active layer 13 in a top view. A first distance D1 from the first side surface 21 to the ridge 23 at the light-emitting end face 71 is different from a second distance D2 from the second side surface 22 to the ridge 23 in a top view. The first distances D1 of the multiple protrusions 20 are equal. The first distance D1 and the second distance D2 may be based on the light-reflecting end face 72. In a top view, the first protrusion 20a has a first region located on the first side surface 21 side and a second region located on the second side surface 22 side, with the ridge 23 as a boundary. The first region of the first convex portion 20a has a first outer portion including the light emitting side end face 71, a second outer portion including the light reflecting side end face 72, and a first inner portion located between the first outer portion and the second outer portion. With respect to the width in the direction along the light emitting side end face 71, the width of the first inner portion is larger than the width of the first outer portion and the second outer portion. In a top view, the second convex portion 20b has a first region located on the first side face 21 side and a second region located on the second side face 22 side with the ridge 23 as a boundary. The second region of the second convex portion 20b has a third outer portion including the light emitting side end face 71, a fourth outer portion including the light reflecting side end face 72, and a second inner portion located between the third outer portion and the fourth outer portion. With respect to the width in the direction along the light emitting side end face 71, the width of the second inner portion is larger than the width of the third outer portion and the fourth outer portion. When viewed from above, the light emitting portion includes an island portion that is disposed between the second inner portion and the light emitting end face 71 and is separated from the second protrusion 20b.

[0078] The laser diode element 500 can independently control the driving of each of the plurality of convex portions 20. The number of ridges included in the laser diode element 500 is two or more, can be three or more, and may be four or more. The width in the direction along the light-emitting end surface 71 of the laser diode element 500 can be, for example, 600 μm or less. This width can be, for example, 100 μm or more. The length in the direction along the longitudinal direction of the ridge 23 of the laser diode element 500 can be, for example, 300 μm or more and can be 2 mm or less. In the top view, the shape of the laser diode element 500 is, for example, rectangular. The laser diode element 500 can emit a plurality of laser beams. The plurality of laser beams are, for example, ultraviolet light or visible light. The peak wavelength of the plurality of laser beams may be, for example, 400 nm or more and 550 nm or less. The plurality of laser beams in one laser diode element 500 are, for example, of the same color. For example, in a plurality of laser beams in one laser diode element 500, the difference between the longest peak wavelength and the shortest peak wavelength may be 5 nm or less.

[0079] The shape, arrangement, material, and the like of each member constituting the laser diode element 500 may be those described in the laminate preparation step S101. The planned cleavage line 200 in the laminate preparation step S101 may be read as the light emission side end face 71 or the light reflection side end face 72 in the laser diode element 500. The planned division line 300 in the laminate preparation step S101 may be read as the outermost side face of the element in the laser diode element 500. Note that the form in which the laser diode element 500 is used is not limited to the form in which the top surface is upward as described in this embodiment, and any direction may be upward.

[0080] (Light emitting device 600) FIG. 13 is a schematic cross-sectional view showing a light emitting device 600 of this embodiment. The light emitting device 600 has a laser diode element 500, a support 610, and a package 620. The support 610 is a member to which the laser diode element 500 is fixed and electrically connected, for example, a submount. The support 610 has a main body 611 and a conductive layer 612 provided on its surface. The main body 611 is, for example, an insulating member such as ceramics. The second conductive layer 42 of the laser diode element 500 is bonded to the conductive layer 612 of the support 610 via a conductive adhesive 630. This allows heat generated by the laser diode element 500 to be dissipated to the support 610 via the second conductive layer 42. In addition, the third conductive layer 43 of the laser diode element 500 may be bonded to the conductive layer 612 of the support 610 via the conductive adhesive 630. This allows the heat generated by the laser diode element 500 to be dissipated to the support 610 via the third conductive layer 43.

[0081] The package 620 is made of a conductive material such as metal, an insulating material such as glass or ceramics, or a composite material thereof. A part of the package 620 is translucent to transmit laser light. The laser light passes through the translucent part of the package 620 and is emitted to the outside of the light emitting device 600. A wavelength conversion member such as a phosphor may be disposed in the part of the package 620 through which the laser light passes. The package 620 hermetically seals the laser diode element 500. The package 620 has an anode electrode and a cathode electrode. The anode electrode of the laser diode element 500 is electrically connected to the anode electrode of the package via a conductive layer, a linear wire, or the like. The cathode electrode of the laser diode element 500 is electrically connected to the cathode electrode of the package via a conductive layer, a linear wire, or the like.

[0082] (Example 1 and Comparative Example) The laser diode element of Example 1 and the laser diode element of Comparative Example were fabricated with different first distances D1 and second distances D2, although they were the same in that they had four convex portions with one ridge formed thereon. In the laser diode element of Example 1, the first distances D1 and second distances D2 in the four convex portions were all 34 μm and 14 μm. In the laser diode element of Comparative Example, the first distances D1 and second distances D2 in the four convex portions were 87 μm and 14 μm, 34 μm and 24 μm, 24 μm and 34 μm, and 14 μm and 87 μm. In Example 1 and Comparative Example, the cleavage step and the division step were performed under the same conditions to obtain laser diode elements.

[0083] (Evaluation of threshold current value) A plurality of laser diode elements of Example 1 and a plurality of laser diode elements of Comparative Example were fabricated. For each of the obtained laser diode elements, the threshold current value when only the first convex portion was oscillated as a laser and the threshold current value when only the second convex portion was oscillated as a laser were measured. FIG. 14 is a graph showing a normal probability distribution of the measurement results. In FIG. 14, each data is plotted with the vertical axis representing the threshold current and the horizontal axis representing the cumulative probability. In FIG. 14, the black circle represents the first convex portion of Example 1, the white circle represents the second convex portion of Example 1, the gray triangle represents the first convex portion of Comparative Example, and the white triangle represents the second convex portion of Comparative Example. From the results shown in FIG. 14, it can be seen that the number of samples in which the difference in the threshold current value between the first convex portion and the second convex portion is smaller in Example 1 than in Comparative Example. It is presumed that such a result was obtained because the difference in the shape of the end face that emits the laser light of the first convex portion and the second convex portion is smaller in Example 1 than in Comparative Example. From this, it can be said that by making the first distance D1 equal, it is possible to reduce the variation in the characteristics of the multiple laser beams corresponding to the multiple ridges. Also, from Fig. 14, it can be seen that the variation in the threshold current value of the multiple laser diode elements of Example 1 is smaller than the variation in the threshold current value of the multiple laser diode elements of Comparative Example. From this, it can be said that by making the first distance D1 equal, it is possible to reduce the variation among the multiple laser diode elements.

[0084] Example 2 A plurality of laser diode elements of Example 2 were fabricated in the same manner as Example 1, except that an island portion was provided between the second inner portion and the planned cleavage line as shown in FIG. 7A.

[0085] (FFP rating) First, in the multiple laser diode elements of Example 1, the size of the ripple in the FFP of the laser light emitted from each convex portion was confirmed, and the size of the ripple was determined to be a predetermined value or more as having ripples. In the multiple laser diode elements of Example 1, the incidence rate of ripples was calculated for each convex portion, and the incidence rate of ripples was the highest for the second convex portion. Next, in the multiple laser diode elements of Example 2, the size of the ripple in the FFP of the laser light emitted from the second convex portion was confirmed, and whether or not ripples were present was determined using the same criteria as for the laser diode element of Example 1. As a result, in the multiple laser diode elements of Example 2, there was no laser diode element that was determined to have ripples in the laser light from the second convex portion.

[0086] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention. In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modified examples and examples of modifications, and it is understood that these modified examples and examples of modifications also fall within the scope of the present invention. [Industrial Applicability]

[0087] The laser diode element described in the embodiment can be used as a light source for, for example, projectors, vehicle headlights, head-mounted displays, special lighting, displays, and the like. [Explanation of symbols]

[0088] 11 nitride semiconductor substrate, 12 first conductive type semiconductor layer, 13 active layer, 14 second conductive type semiconductor layer, 20 convex portion, 20a first convex portion, 20b second convex portion, 20c intermediate convex portion, 21 first side surface, 21a first edge, 21b second edge, 22 second side surface, 23 ridge, 24a first outer portion, 24b second outer portion, 24c first inner portion, 24d intermediate portion, 25a third outer portion, 25b fourth outer portion, 25c second inner portion, 25d intermediate portion, 26, 27 island portion, 26a first portion, 26b second portion, 30 insulating film, 31 first insulating film, 32 second insulating film, 41 first conductive layer, 42 second conductive layer, 43 third conductive layer, 50 upper electrode, 60 lower electrode, 71 light emitting end surface, 72 Light reflecting side end surface, 100 laminate, 200 planned cleavage line, 300 planned division line, 400 element region, 500 laser diode element, 600 light emitting device, 610 support, 611 body, 612 conductive layer, 620 package, 630 adhesive

Claims

1. A nitride semiconductor substrate; a first conductive type semiconductor layer provided on the nitride semiconductor substrate; A step of preparing a laminate having an active layer provided on the first conductive type semiconductor layer and a second conductive type semiconductor layer provided on the active layer, the laminate includes a plurality of element regions partitioned by a plurality of planned cleavage lines and a plurality of planned division lines intersecting the planned cleavage lines when viewed from above; The element region has a plurality of protrusions, Each of the plurality of protrusions includes a first side surface located laterally and connecting one of the planned cleavage lines and the other of the planned cleavage lines, a second side surface located laterally opposite to the first side surface and connecting one of the planned cleavage lines and the other of the planned cleavage lines, and a ridge disposed between the first side surface and the second side surface in a top view and having a longitudinal direction in a direction intersecting with the planned cleavage lines, a lower end of the first side surface and a lower end of the second side surface are located below a lower surface of the active layer, a first distance from the first side surface to the ridge along the planned cleavage line is different from a second distance from the second side surface to the ridge when viewed from above; a step of: a step in which the first distances in one element region are equal to each other, and the second distances in a plurality of protrusions are equal to each other; a step of cleaving the laminate along the planned cleavage line, wherein cleavage in each of the plurality of protrusions starts from the first side surface and reaches the second side surface; and dividing the laminate along the planned dividing lines.

2. The method for manufacturing a laser diode device according to claim 1 , wherein the first distance is longer than the second distance.

3. 3. The method for manufacturing a laser diode element as described in claim 1 or 2, wherein the multiple convex portions in the element region include a first convex portion located on the side where cleavage starts, a second convex portion located on the side where cleavage ends, and one or more intermediate convex portions located between the first convex portion and the second convex portion.

4. When viewed from above, the convex portion has a first region located on the first side surface side and a second region located on the second side surface side, with the ridge as a boundary, 4. The method for manufacturing a laser diode element according to claim 3, wherein the element region has a plurality of first conductive layers disposed above the ridges of the plurality of protrusions and the first region, and electrically connected to the second conductivity type semiconductor layer.

5. the element region includes a plurality of second conductive layers disposed above the respective first conductive layers and electrically connected to the first conductive layers; 5. The method for manufacturing a laser diode element according to claim 4, wherein the width of the second conductive layer in the direction along the intended cleavage line is smaller than the width of the first conductive layer.

6. the first conductive layer disposed above the second protrusion is also disposed above the second region of the second protrusion, 6. The method for manufacturing a laser diode element according to claim 5, wherein the element region has a third conductive layer disposed above the second region of the second protrusion.

7. When viewed from above, the convex portion has a first region located on the first side surface side and a second region located on the second side surface side, with the ridge as a boundary, the first region of the first protrusion has a first outer portion through which one of the planned cleavage lines passes, a second outer portion through which the other of the planned cleavage lines passes, and a first inner portion located between the first outer portion and the second outer portion, A method for manufacturing a laser diode element according to any one of claims 3 to 6, wherein the width of the first inner portion in the direction along the intended cleavage line is larger than the widths of the first outer portion and the second outer portion.

8. When viewed from above, the convex portion has a first region located on the first side surface side and a second region located on the second side surface side, with the ridge as a boundary, the second region of the second protrusion has a third outer portion through which one of the planned cleavage lines passes, a fourth outer portion through which the other of the planned cleavage lines passes, and a second inner portion located between the third outer portion and the fourth outer portion, A method for manufacturing a laser diode element according to any one of claims 3 to 7, wherein the width of the second inner portion in the direction along the intended cleavage line is larger than the widths of the third outer portion and the fourth outer portion.

9. 9. The method for manufacturing a laser diode element according to claim 8, wherein, when viewed from above, the element region has an island portion separated from the second convex portion between the second inner portion and at least one of the planned cleavage lines.

10. 10. The method for manufacturing a laser diode element according to claim 9, wherein, in a top view, the island portion has a first portion and a second portion separated from the first portion and located between the first portion and the second inner portion.

11. A nitride semiconductor substrate; a first conductivity type semiconductor layer provided on the nitride semiconductor substrate; an active layer provided on the first conductive type semiconductor layer; a second conductive type semiconductor layer provided on the active layer; A light emitting end surface; A light reflecting end surface; A plurality of protrusions; the plurality of protrusions include a first side surface located laterally and connecting the light emitting side end surface and the light reflecting side end surface, a second side surface located laterally opposite to the first side surface and connecting the light emitting side end surface and the light reflecting side end surface, and a ridge disposed between the first side surface and the second side surface in a top view and having a longitudinal direction that intersects with the light emitting side end surface, a lower end of the first side surface and a lower end of the second side surface are located below a lower surface of the active layer, a first distance from the first side surface to the ridge at the light emitting end surface is different from a second distance from the second side surface to the ridge in a top view; The first distances of the plurality of protrusions are equal, and the second distances of the plurality of protrusions are equal.

12. The laser diode device of claim 11 , wherein the first distance is greater than the second distance.

13. 13. The laser diode element according to claim 11, wherein the plurality of convex portions include a first convex portion, a second convex portion, and one or more intermediate convex portions located between the first convex portion and the second convex portion.

14. When viewed from above, the first convex portion has a first region located on the first side surface side and a second region located on the second side surface side, with the ridge as a boundary, the first region of the first convex portion has a first outer portion including the light emitting side end face, a second outer portion including the light reflecting side end face, and a first inner portion located between the first outer portion and the second outer portion, 14. The laser diode element according to claim 13, wherein the width of the first inner portion in a direction along the light emitting end face is larger than the widths of the first outer portion and the second outer portion.

15. When viewed from above, the second convex portion has a first region located on the first side surface side and a second region located on the second side surface side, with the ridge as a boundary, the second region of the second convex portion has a third outer portion including the light emitting side end face, a fourth outer portion including the light reflecting side end face, and a second inner portion located between the third outer portion and the fourth outer portion, 15. The laser diode element according to claim 13, wherein the second inner portion has a width greater than the third outer portion and the fourth outer portion in a direction along the light emitting end face.

16. The laser diode element according to claim 15 , further comprising an island portion disposed between the second inner portion and the light emitting end face and separated from the second convex portion when viewed from above.

17. 17. The laser diode element according to claim 13, wherein an area of ​​the first convex portion is different from an area of ​​the intermediate convex portion when viewed from above.

18. 17. The laser diode element according to claim 13, wherein in the first convex portion, a distance from the first side surface to the ridge in a top view includes a distance different from the first distance from the first side surface to the ridge at the light emitting end face.

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