Apparatus and method for cleaning a substrate edge and cleaning a gap between substrate carrier heads

Abstract

To provide, in a chemical mechanical polishing (CMP) apparatus, a method of removing residues from a substrate edge and removing residues from gaps in a carrier head surrounding the substrate, and an apparatus for removing residues from a substrate edge before the substrate is transferred from a carrier head and for removing residues from gaps surrounding a membrane of the carrier head.SOLUTION: The present disclosure relates to a load cup 124 included in a CMP system that include an annular substrate station to receive a substrate. The annular substrate station 350 surrounds a nebulizer 356 located within the load cup. The nebulizer includes a set of energized fluid nozzles (e.g., fourth nozzles 358D) disposed on an upper surface of the nebulizer adjacently to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles releases energized fluid at an upward angle relative to the upper surface.SELECTED DRAWING: Figure 3A

Description

Background Art

[0001] Technical Field

[0001] Embodiments of the present disclosure generally relate to substrate processing, and more specifically, to tools and methods for substrate processing.

[0002] Description of Related Art

[0002] Integrated circuits are typically formed on a substrate by sequentially depositing conductive, semiconductive, or insulating layers on a silicon substrate. Manufacturing includes depositing a fill layer on a non-planar surface and planarizing the fill layer until the non-planar surface is exposed. A conductive fill layer may be deposited on a patterned insulating layer to fill trenches or holes within the insulating layer. The fill layer is then polished until the raised pattern of the insulating layer is exposed. After planarization, the portions of the conductive layer remaining between the raised patterns of the insulating layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate. In addition, planarization may be required to planarize the dielectric layer on the substrate surface for photolithography.

[0003]

[0003] Chemical mechanical polishing (CMP) is one acceptable planarization method. This planarization method includes mounting a substrate on a carrier head or polishing head of a CMP apparatus. The exposed surface of the substrate is placed in contact with a rotating polishing disk pad or belt pad. The carrier head applies a controllable load to the substrate so as to bias the device side of the substrate toward the polishing pad. A polishing slurry containing at least one chemical reactant (and polishing particles if a standard pad is used) is supplied to the surface of the polishing pad.

[0004]

[0004] Typically, the substrate is held under the carrier head so as to abut against the film within the retaining ring. Further, when the substrate is within the carrier head, there is a gap between the outer edge of the substrate and the inner circumference of the retaining ring. Additionally, there is also a gap between the outer edge of the film and the inner circumference of the retaining ring. In the vicinity of the outer edge of the substrate, in such gaps and other regions, polishing slurry and organic residues can accumulate during processing. Such residues can remain on the substrate edge during processing and / or dislodge, causing defects in the substrate and potentially affecting the efficiency of the CMP apparatus. Therefore, there is a need for a method to remove residues from the substrate edge and from the gaps within the carrier head surrounding the substrate. There is also a need for an apparatus for removing residues from the substrate edge before the substrate is transferred from the carrier head and for removing residues from the gaps surrounding the film of the carrier head.

Summary of the Invention

[0005]

[0005] In one embodiment, a load cup is provided, which has an annular substrate station configured to receive a substrate and a nebulizer disposed within the load cup and surrounded by the annular substrate station. The nebulizer has a set of energized fluid nozzles disposed in the vicinity of the interface between the annular substrate station and the nebulizer on the upper surface of the nebulizer. The set of energized fluid nozzles is configured to discharge the energized fluid at an upward angle with respect to the upper surface.

[0006]

[0006] In another embodiment, a method for cleaning a chemical mechanical polishing system is provided, which includes directing an energized fluid from a set of energized fluid nozzles of a load cup to the edge of a substrate disposed within a carrier head. The carrier head has a retaining ring for holding the substrate under the film of the carrier head. The method includes unloading the substrate from the carrier head and directing the energized fluid from the set of energized fluid nozzles to a gap formed between the outer edge of the film and the inner circumference of the retaining ring.

[0007]

[0007] In another embodiment, the chemical mechanical polishing system includes a carrier head having a retaining ring for holding a substrate under a film of the carrier head, and a load cup having a set of biasing fluid nozzles disposed on an upper surface of an outer portion of the load cup. The set of biasing fluid nozzles is configured to direct biasing fluid into a gap between an outer edge of the film and an inner circumference of the retaining ring.

[0008]

[0008] To enable a more detailed understanding of the above-described features of the present disclosure, a more detailed description of the present disclosure, briefly summarized above, can be obtained by reference to the embodiments. Some embodiments are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be regarded as limiting the scope thereof, and the present disclosure may admit other equally effective embodiments.

Brief Description of the Drawings

[0009]

Figure 1

[0009] A top plan view of a chemical mechanical polishing (CMP) system according to one embodiment is shown.

Figure 2A

[0010] A partial side view of a polishing apparatus according to one embodiment is shown.

Figure 2B

[0011] A bottom view of a polishing apparatus according to one embodiment is shown.

Figure 3A

[0012] A top plan view of a load cup according to one embodiment is shown.

Figure 3B

[0013] A schematic side view of a spray pattern of a nozzle according to one embodiment is shown.

Figure 4

[0014] A flow diagram of a method for processing a substrate according to one embodiment is shown.

Best Mode for Carrying Out the Invention

[0010]

[0015] For ease of understanding, where possible, the same reference numbers are used to denote the same elements common to multiple figures. The components and features of one embodiment are assumed to be beneficially incorporated into other embodiments without further description.

[0011]

[0016] The present disclosure relates to a load cup configured with a biasing fluid nozzle that discharges a tunable biasing fluid jet to clean the edge of a substrate disposed within a carrier head before the substrate is unloaded from the carrier head without overheating the substrate. The biasing fluid jet discharged from the biasing fluid nozzle penetrates into a narrow gap between a hydrophobic film and the inner periphery of a holding ring of the carrier head in the carrier head and has favorable characteristics for effectively cleaning such a gap. According to one or more embodiments of the present disclosure, it has been found that certain characteristics of the biasing fluid jet (for example, one or more of a flat fan shape, high pressure, high temperature, gas-phase flow, solidity, molten particles for bombardment, sound wave generation, and combinations thereof) can be advantageously used for rapid and better cleaning. It is also known that each of the biasing fluid nozzles can be used in combination with a corresponding fluid spray nozzle (for example, a deionized water spray nozzle) for improved control (such as temperature control).

[0012]

[0017] FIG. 1 shows a top plan view of a chemical mechanical polishing (CMP) system 100 according to one embodiment disclosed herein. Although the CMP system is illustrated and described in FIG. 1 herein, the concepts disclosed herein may also be applied to other substrate processing devices. The CMP system 100 includes a polishing section 102 and a cleaning / drying section 104 that process (e.g., wash and / or polish) a substrate 108. The CMP system 100 also includes other sections that perform other processes on the substrate 108. As used herein, substrates include articles used to create electronic devices or circuit components. Substrates include semiconductor substrates (e.g., silicon-containing substrates, patterned or unpatterned substrates, glass plates, masks, etc.). The pass-through 110 is an opening between the polishing section 102 and the cleaning / drying section 104 that is adapted for the transfer of the substrate 108.

[0013]

[0018] The polishing section 102 includes one or more polishing stations 114 (e.g., individual polishing stations 114A-114D). Each of the polishing stations 114 includes a polishing pad (e.g., individual polishing pads 116A-116D). The polishing pads rotate in contact with the surface of the substrate 108 to perform various polishing processes. One or more slurries (not shown) are applied between the substrate 108 and the polishing pads 116A-116D to process the substrate.

[0014]

[0019] The polishing section 102 includes a plurality of carrier heads 120 that abut against the polishing pads 116A - 116D during polishing to hold the substrate 108. Each of the polishing stations 114A - 114D may include a single head (e.g., individual carrier heads 120A - 120D). The carrier heads 120A - 120D fix the substrate 108 within the carrier head when the carrier heads 120A - 120D are transported so as to enter and exit the polishing stations 114A - 114D. For example, the carrier heads 120A - 120D fix the substrate 108 within the carrier head when the carrier heads 120A - 120D are transported between the load cups 124 (e.g., individual load cups 124A, 124B) and the polishing stations 114A - 114D. The load cups 124A, 124B transport the substrate 108 between the carrier heads 120A - 120D and the substrate exchanger 130 (e.g., individual exchangers 130A, 130B). The first substrate exchanger 130A rotates in the first direction 132A, and the second exchanger 130B rotates in the second direction 132B (which may be the same as or opposite to the first direction 132A).

[0015]

[0020] The cleaning and drying section 104 includes a robot 136, and the robot 136 transfers the substrate 108 between the substrate exchangers 130A, 130B at various access locations 172A, 172B through the pass - through 110. The robot 136 also transfers the substrate 108 between stations (not shown) within the cleaning and drying section 104 and the substrate exchangers 130A, 130B.

[0016]

[0021] Figures 2A and 2B show side and bottom views of a carrier head 120 (which can be any of the carrier heads 120A - 120D of FIG. 1) according to some embodiments. The carrier head 120 includes a retaining ring 206 for holding the substrate 108 under the membrane 204. The membrane 204 is a flexible hydrophobic membrane. The outer periphery 205 of the membrane is surrounded by the inner periphery 207 of the retaining ring 206. A gap 216 is formed between the inner periphery 207 of the retaining ring 206 and the outer periphery 205 of the membrane 204. In some embodiments, the gap 216 is from about 0.5 mm to about 3 mm (e.g., from about 1 mm to about 2 mm). The carrier head 120 includes one or more individually controllable pressurizable chambers (e.g., 202A, 202B, 202C, 202D) defined by the membrane 204. Each of the pressurizable chambers has an associated pressure (P A , P B , P C , and P D ), where P R is the pressure applied to the retaining ring 206 during processing. During processing, when the carrier head 120 presses against a polishing pad (e.g., 116A - 116D) while rotating the substrate 108, polishing slurry, debris, and residues can accumulate at the edge of the substrate 108, the beveled area of the substrate, and other locations (such as within the gap 216).

[0017]

[0022] Although not bound by theory, since membrane 204 is hydrophobic, it is believed that capillary and / or meniscus forces around the outer periphery 205 of membrane 204 prevent the easy ingress of conventional rinse water (e.g., deionized (DI) water) into the above-mentioned gaps and features. Residues and particles accumulate over time and can be released during processing, causing scratches on substrate 108. One solution could be to rinse membrane 204 with the membrane facing up, but this process has at least an impact on throughput and causes water to bead up, so it has not been conventionally used in the industry. In the rinsing process with membrane 204 facing down, the hydrophobic membrane surface cannot be wetted, limiting the effectiveness of cleaning. The use of high-pressure steam has been found to displace slurry residues and particles by using both kinetic and thermal energy. In some embodiments, steam is effective for cleaning the gaps within carrier head 120 both when substrate 108 is not in a fixed position and when substrate 108 is held within carrier head 120.

[0018]

[0023] FIG. 3A shows a top plan view of a load cup 124 (e.g., 124A or 124B) according to one embodiment. The load cup 124 includes a substrate station 350 having an annular shape. The substrate station 350 moves vertically to place a substrate on the blade 334 of a substrate exchanger 130 (e.g., 130A, 130B) and to remove the substrate 108 from the blade 334. The blade 334 is rotatable to access locations 172A, 172B for loading and unloading the substrate 108 by a robot 136 (FIG. 1).

[0019]

[0024] The substrate station 350 includes notches (such as 352A, 352B, 352C) for receiving the blade 334. The distal end 344 of the blade is received by the notches 352B and 352C. The proximal end of the blade 334 is received by the notch 352A. The substrate 108 is placed on the raised feature of the substrate station 350. When the substrate station 350 moves upward to remove the substrate 108 from the blade 334, the substrate 108 is positioned inside a plurality of pins 354 that create a pocket for centering the substrate 108.

[0020]

[0025] The load cup 124 includes a nebulizer 356 having a plurality of various nozzles (e.g., 358A, 358B, 358C, 358D), and such a plurality of nozzles are configured to spray a fluid (e.g., deionized water) onto the blade 334, the substrate 108 on the blade 334 (not shown in FIG. 3A), the substrate attached to the carrier head 120, and / or the carrier head 120 (not shown in FIG. 3A) disposed on the load cup 124. The nebulizer 356 includes, for example, a set of first nozzles 358A arranged along the outer portion of the nebulizer 356 for rinsing the substrate 108 when the substrate 108 is positioned on the load cup 124, and, for example, a set of second nozzles 358B arranged in an array along the diameter of the nebulizer 356 for rinsing the film 204 of the carrier head 120 when the carrier head 120 is positioned on the load cup 124. The nebulizer 356 also includes a set of third nozzles 358C on the outer portion of the nebulizer 356, and the set of third nozzles 358C is configured to spray onto a portion of the carrier head 120 (e.g., the gap 216 between the outer circumference 205 of the film 204 and the inner circumference 207 of the retaining ring 206) when the carrier head 120 is positioned on the load cup 124 (regardless of the presence or absence of the substrate 108). The third nozzle 358C (e.g., a spray nozzle) is also configured to spray onto the outer edge of the substrate 108 (e.g., into the gap between the outer edge of the substrate 108 and the inner circumference 207 of the retaining ring 206) while the substrate 108 is held within the carrier head 120. The third nozzle 358C is connected to a rinsing liquid (e.g., deionized water) at room temperature (e.g., from about 10 °C to about 40 °C). Each of the third nozzles 358C is connected to an atomizer.

[0021]

[0026] The nebulizer 356 includes a set of fourth nozzles 358D (e.g., biasing fluid nozzles). Each of the fourth nozzles 358D is disposed proximal to each of the third nozzles 358C on the outer portion of the upper surface of the nebulizer 356. In some embodiments, the biasing fluid is deionized water (DIW), DIW and nitrogen, DIW and clean dry air (CDA), ice water particles and nitrogen, ice water particles and CDA, carbon dioxide ice, DIW energized by an ultrasonic generator or a megasonic generator, or a combination (s) thereof. Without being bound by theory, it is believed that certain mixtures containing ice particles may be used to bombard and displace debris in small voids and gaps. The biasing fluid is a gas-phase fluid and / or a mixed-phase fluid (e.g., vapor and / or steam). The temperature of the biasing fluid (such as steam) is from about 80°C to about 150°C (e.g., from about 100°C to about 120°C), for example, a temperature above the saturation temperature of the fluid. The pressure applied to bias the fluid is from about 30 psi to about 140 psi (e.g., from about 40 psi to about 50 psi). For example, other pressures and temperatures are envisioned for dry ice and other biasing fluids.

[0022]

[0027] In some embodiments, the fluid is biased by pressurizing the fluid, acoustically biased (e.g., via acoustic cavitation), pneumatically assisted (e.g., using a liquid mixed with a pressurized gas), or a combination (s) thereof. Other methods and combinations are also feasible. Acoustic cavitation includes biasing the fluid with ultrasonic or megasonic waves to displace residues and debris. Biasing the fluid acoustically uses a piezoelectric transducer (PZT) operating within a frequency range from the low ultrasonic range (e.g., about 20 KHz) to the high megasonic range (e.g., about 2 MHz). Other frequency ranges may also be used. The shape of a suitable acoustic energy source generator (e.g., PZT) is rectangular. The acoustic source generator is connected to the fourth nozzle 358D.

[0023]

[0028] The fourth fluid nozzle 358D is oriented upwardly perpendicular (e.g., at about 90 degrees) to the upper surface of the nebulizer 356. Other angles such as from about 45 degrees to about 100 degrees with respect to the upper surface of the nebulizer 356 are also contemplated, where 45 degrees is the angle oriented radially outward with respect to the nebulizer 356. Additionally, each of the fourth fluid nozzles 358D is configured to direct fluid to a flat fan jet (such as 360 shown in FIG. 3B). FIG. 3B shows a schematic side view of the spray pattern of the flat fan jet 360 of the third nozzle 358C and / or the fourth nozzle 358D according to some embodiments. The flat fan jet is substantially parallel to a portion of the inner circumference of the annular substrate station 350, and the jet angle α from the first edge to the second edge of the flat fan jet, centered at the tip of the fourth fluid nozzle 358D, is from about 30 degrees to about 50 degrees (e.g., about 40 degrees). In some embodiments, the nebulizer 356 includes from about one to about five fourth fluid nozzles 358D (e.g., two, three, or four fourth fluid nozzles 358D). Each of the fourth fluid nozzles 358D is arranged equidistantly along the outer portion of the nebulizer 356. In some embodiments, the nebulizer 356 includes from about one to about five third nozzles 358C, and each of the fourth fluid nozzles 358D is arranged proximal to a corresponding third nozzle 358C.

[0024]

[0029] FIG. 4 includes a flow diagram of a method for processing a substrate. Method 400 includes step 402 of directing a biasing fluid from a set of biasing fluid nozzles (e.g., 358D) of a load cup (e.g., 124) to an edge of a substrate (e.g., 108) disposed within a carrier head (e.g., 120). Carrier head 120 includes a retaining ring 206 for holding substrate 108 under membrane 204 of carrier head 120. The edge of substrate 108 is maintained at a temperature of from about 60° C. to about 70° C. as measured from outside carrier head 120. In some embodiments, substrate 108 is cooled to room temperature (e.g., from about 20° C. to about 40° C.) after being polished in polishing section 102 and during rinsing and / or removal from polishing section 102. Maintaining substrate 108 at a low temperature is thought to reduce the potential for corrosion during substrate transfer. The methods described herein control the substrate temperature during cleaning, for example by confining the biasing fluid to the edge area of the substrate. In some embodiments, DI water from a spray nozzle (e.g., 358C) is sprayed onto the edge of substrate 108 while a biasing fluid (e.g., steam) is directed to the edge of substrate 108. In some embodiments, the DI water is sprayed immediately after the biasing fluid has been directed to the edge of substrate 108. The composite jet of DI water and biasing fluid is controlled by adjusting the pressure of the biasing fluid and the amount of water sprayed. Specifically, the temperature of this composite jet is controlled to maintain the temperature of substrate 108 below about 70° C. Maintaining the temperature of substrate 108 below about 70° C. is thought to reduce undesirable effects on substrate 108. Residues and debris are displaced from the edge of substrate 108 without overheating the substrate and a portion of carrier head 120 (e.g., retaining ring 206). Managing the temperature reduces the risk of material degradation of substrate 108 and carrier head 120. The water spray also acts to rinse away the displaced residues and debris. In some embodiments, the biasing fluid is directed to the substrate edge while substrate 108 is within carrier head 120 and rotating with the carrier head. The substrate 108 is fixed to the carrier head 120 by applying a vacuum pressure to the membrane.When the clearance between the inner periphery of the membrane and the substrate edge is narrow and combined with the hydrophobic properties of the membrane, it becomes difficult to clean the substrate edge and bevel area using conventional methods. The method described in this document provides a biasing fluid. This biasing fluid has the shape and angle of a fan jet that guides the biasing fluid to the substrate edge while the substrate is fixed to the carrier head 120 in order to improve cleaning.

[0025]

[0030] In step 404, for example, the substrate 108 is loaded onto a substrate exchanger (such as 130A, 130B), and by rotating this substrate exchanger, the substrate 108 is unloaded from the carrier head 120. After the substrate 108 is removed from the carrier head, the load cup 124 returns to a position proximal to the carrier head 120. In step 406, the biasing fluid is directed into a gap 216 formed between the outer periphery 205 of the membrane 204 and the inner periphery 207 of the retaining ring 206 of the empty carrier head 120. In some embodiments, DI water is sprayed immediately after the biasing fluid to rinse away any displaced residues and debris.

[0026]

[0031] Accordingly, the present disclosure relates to a load cup configured with a biasing fluid nozzle that emits a tunable biasing fluid jet to clean the substrate edge without overheating the substrate before the substrate disposed within the carrier head is unloaded from the carrier head. The biasing fluid jet emitted from the biasing fluid nozzle penetrates into a narrow gap within the carrier head between the hydrophobic membrane of the carrier head and the inner periphery of the retaining ring and has properties that are favorable for effectively cleaning this gap. Each of the biasing fluid nozzles can be used in combination with a corresponding fluid spray nozzle (such as a deionized water spray nozzle) to improve control (such as temperature control).

Claims

1. 1. A method for cleaning a chemical mechanical polishing system, comprising: directing a first fluid comprising steam from a first array of fluid nozzles of a load cup to an edge of the substrate and to a gap between the substrate and an inner periphery of a retaining ring disposed within the carrier head while the substrate is positioned on the film within the carrier head and the carrier head is positioned above the first array of fluid nozzles of a load cup; directing a second fluid from a second array of fluid nozzles of the load cup to the edge of the substrate and to a gap between the substrate and the inner circumference of the retaining ring while directing the first fluid from the first array of fluid nozzles, the second fluid comprising deionized water and configured to maintain the substrate at a temperature below 70° C.; unloading the substrate from the carrier head; directing the first fluid from a first array of fluid nozzles into a gap between an outer edge of the membrane and an inner circumference of the retaining ring; directing the first fluid into the gap between the outer edge of the membrane and the inner circumference of the retaining ring, and then directing the second fluid into the gap between the outer edge of the membrane and the inner circumference of the retaining ring. The method includes:

2. 2. The method of claim 1, wherein the first array of fluid nozzles is coupled to a steam source, and the first fluid from the first array of fluid nozzles is configured to exceed a saturation pressure and a saturation temperature of the steam from the steam source.

3. The method of claim 1 , wherein the substrate is maintained at a temperature of from about 60° C. to less than about 70° C.

4. The method of claim 1 , wherein the second fluid is at about 10° C. to about 40° C. and forms a flat fan jet.

5. The method of claim 1 , wherein the second array of fluid nozzles forms a tunable jet or a flat fan jet, a flat portion of the flat fan jet being substantially parallel to an inner circumference of the carrier head.

6. The method of claim 1 , wherein directing the first and second fluids removes residue from the carrier head.

7. 10. The method of claim 1, wherein the first fluid from the first array of fluid nozzles comprises deionized water and nitrogen gas, deionized water and clean dry air (CDA), ultrasonic deionized water, megasonic deionized water, or one or more combinations thereof.

8. 2. The method of claim 1 , wherein the substrate is secured to the carrier head under vacuum pressure applied to the membrane of the carrier head while the first fluid from the first array of fluid nozzles is directed to the edge of the substrate and the gap between the substrate and the inner circumference of the retaining ring.

9. The method of claim 1 , wherein the load cup comprises a substrate station configured to align the substrate.

10. The method of claim 1 , wherein the first array of fluid nozzles is coupled to an acoustic wave generating device configured to energize the first fluid in the first array of fluid nozzles.

11. The method of claim 1 , wherein the second array of fluid nozzles is configured to direct the second fluid into a flat fan jet comprising an angle of about 30 degrees to about 50 degrees.

12. 2. The method of claim 1, wherein the first array of fluid nozzles and the second array of fluid nozzles are disposed on a top surface of a nebulizer, and the first array of fluid nozzles is oriented approximately perpendicular to the top surface of the nebulizer.

13. The method of claim 1 , wherein the second array of fluid nozzles is configured to direct the second fluid into a flat fan jet generally parallel to an inner circumference of the retaining ring.

14. the first array of fluid nozzles comprising a first rinse array of nozzles and a second rinse array of nozzles; the first rinse array of nozzles is disposed along a diameter of the load cup; the second rinse array of nozzles is disposed radially around the load cup; and The method of claim 1 , wherein the load cup is positioned below the carrier head.

15. 1. A method for cleaning a chemical mechanical polishing system, comprising: Positioning a substrate disposed on a carrier head over a load cup, the carrier head comprising: a retaining ring disposed within the carrier head; a membrane disposed radially inward of the retaining ring configured to retain the substrate; a gap disposed between the inner periphery of the retaining ring and the outer periphery of the membrane; The load cup comprises: a nebulizer disposed centrally within the load cup and below a top surface of the load cup; a first array of fluid nozzles disposed on the nebulizer configured to direct a first fluid toward the carrier head; a second array of fluid nozzles disposed on the nebulizer configured to direct a second fluid, including steam, toward the gap; a third array of fluid nozzles disposed on the nebulizer configured to direct a third fluid into the gap, the third fluid being configured to maintain the substrate at a temperature below 70° C.; positioning a substrate disposed on a carrier head above a load cup; directing the first fluid from the first array of fluid nozzles to the carrier head; simultaneously directing the second fluid and a third fluid from the second array of fluid nozzles and the third array of fluid nozzles into the gap; unloading the substrate from the carrier head; directing the first fluid from the first array of fluid nozzles to the carrier head; A method comprising:

16. The method of claim 15 , wherein the third array of fluid nozzles sprays a flat fan jet pattern substantially parallel to an inner circumference of the retaining ring.

17. 16. The method of claim 15, wherein the second fluid further comprises deionized water and nitrogen gas, deionized water and clean dry air (CDA), ultrasonic deionized water, megasonic deionized water, or one or more combinations thereof.

18. The method of claim 16 , wherein the flat fan jet pattern comprises an angle of about 30 degrees to about 50 degrees.

19. the first array of fluid nozzles comprising a first rinse array of nozzles and a second rinse array of nozzles; the first rinse array of nozzles is disposed along a diameter of the load cup; the second rinse array of nozzles is disposed radially around the load cup; and The method of claim 15 , wherein the load cup is positioned below the carrier head.

20. 16. The method of claim 15, wherein a second array of the fluid nozzles is coupled to a steam source, and the second fluid from the second array of the fluid nozzles is configured to exceed a saturation pressure and a saturation temperature of the steam from the steam source.

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