Substrate Processing Equipment

Abstract

To improve the stability of holding of a substrate while suppressing the adhesion of a processing liquid to the lower surface of a substrate.SOLUTION: A substrate processing apparatus transmits gas between a lower surface 92 of a substrate 9 and a base surface 210 of a base portion 21 to form an airflow 93 radially outward, and causes the Bernoulli effect to generate a pressure drop in a space between the substrate 9 and the base portion 21. A second surface 212 of the base surface 210 faces upward as it goes radially outward. A third surface 213 extends downward as it goes radially outward from the outer peripheral edge of the second surface 212. The fourth surface 214 is an annular surface that is continuous with the lower edge of the third surface 213. The fourth surface 214 extends radially outward from the outer peripheral edge of the substrate 9 in the radial direction. Thereby, adhesion of a processing liquid to the lower surface 92 of the substrate 9 can be suppressed, and the stability of holding the substrate 9 can also be improved.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for processing a substrate. [Background technology]

[0002] Conventionally, in the manufacturing process of semiconductor substrates (hereinafter simply referred to as "substrates"), various processes are performed on the substrates. For example, liquid processing is performed on the substrate by rotating the substrate held in a horizontal position by a substrate holder and supplying a processing liquid to the surface of the rotating substrate.

[0003] The wet etching apparatus of Patent Document 1 uses a Bernoulli chuck as a substrate holder for holding a substrate. High-pressure gas is supplied between the substrate and a support positioned below the substrate, and the negative pressure created by the gas flowing along the underside of the substrate is used to suck the substrate toward the support. The gas is supplied to the space between the substrate and the support from an annular nozzle formed on the upper surface of the support below the outer periphery of the substrate. The support is provided with an annular gas exhaust section that extends from the annular nozzle radially outward beyond the outer periphery of the substrate and is spaced downward from the substrate. An annular gas exhaust flow path is provided below the gas exhaust section, extending radially outward and downward from the annular nozzle.

[0004] In this wet etching apparatus, the etching liquid supplied to the upper surface of the substrate flows from the outer periphery of the substrate to the lower surface, filling the gap between the peripheral edge of the lower surface of the substrate and the upper surface of the gas exhaust portion of the support. This allows etching of the peripheral edge of the lower surface of the substrate. The etching liquid that flows to the lower surface of the substrate is exhausted radially outward through the gas exhaust flow path. In addition, gas supplied from the annular nozzle between the substrate and the support is also exhausted radially outward through the gas exhaust flow path. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-142818 Summary of the Invention [Problem to be solved by the invention]

[0006] Incidentally, in liquid processing of a substrate, there are cases where it is necessary to prevent the processing liquid supplied to the upper surface of the substrate from flowing over to the lower surface of the substrate, unlike the etching processing of Patent Document 1. However, when a substrate is held by a Bernoulli chuck as in Patent Document 1, the processing liquid, etc., supplied to the upper surface of the substrate and flowing down from the outer edge of the substrate is sucked in due to the negative pressure generated between the substrate and the support, and may flow over to the lower surface of the substrate.

[0007] On the other hand, if the flow rate of the gas supplied between the substrate and the support is increased to prevent the processing liquid from flowing around to the underside of the substrate, the gas may push up the substrate, which may reduce the stability of the substrate holding by the Bernoulli chuck.

[0008] The present invention has been made in view of the above-mentioned problems, and has as its object to improve the stability of holding a substrate while suppressing adhesion of a processing liquid to the underside of the substrate. [Means for solving the problem]

[0009] The invention of claim 1 is a substrate processing apparatus for processing a substrate, comprising: a substrate holding unit that holds a substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit about a central axis facing in the vertical direction; and a processing liquid supply unit that supplies a processing liquid to an upper surface of the substrate, wherein the substrate holding unit comprises: a base unit that faces the lower surface of the substrate and has a base surface that extends radially outward from an outer periphery of the substrate; a plurality of support pins that are arranged in the circumferential direction on the base surface, protrude upward from the base surface, and contact the outer periphery of the lower surface of the substrate; and a gas supply unit that delivers gas between the lower surface of the substrate and the base surface of the base unit to form an airflow that flows radially outward, causing a pressure drop in a space between the substrate and the base unit by the Bernoulli effect; The support surface comprises: a first surface, which is a horizontal circular surface that faces the center of the substrate in the vertical direction; a second surface, which is an annular surface that extends radially outward from the outer peripheral edge of the first surface below the substrate and that faces upward as it extends radially outward, and on which the multiple support pins are arranged; a third surface, which is an annular surface that continues with the outer peripheral edge of the second surface below the lower surface of the substrate and that extends vertically downward from the outer peripheral edge of the second surface or that faces downward as it extends radially outward; and a fourth surface, which is an annular surface that continues with the lower edge of the third surface and that is radially outward from the outer peripheral edge of the substrate, and

[0010] The invention described in claim 2 is the substrate processing apparatus described in claim 1, wherein the fourth surface extends at the same vertical position as the lower edge of the third surface, or extends downward as it moves radially outward from the lower edge of the third surface.

[0011] The invention described in claim 3 is a substrate processing apparatus described in claim 1 or 2, wherein the base surface further includes a fifth surface having an annular shape that extends downward as it extends radially outward from the outer peripheral edge of the fourth surface.

[0012] The invention described in claim 4 is a substrate processing apparatus described in any one of claims 1 to 3, wherein the third surface is a curved surface that extends downward as it moves radially outward from the outer peripheral edge of the second surface and is convex radially outward and upward.

[0013] A fifth aspect of the present invention provides the substrate processing apparatus according to any one of the first to fourth aspects, wherein the third surface is continuous with the outer periphery of the second surface below the substrate.

[0014] The invention described in claim 6 is a substrate processing apparatus described in claim 5, wherein the radial distance between the boundary between the second surface and the third surface and the outer peripheral edge of the substrate is 0.5 mm or more and 2.0 mm or less.

[0015] The invention described in claim 7 is a substrate processing apparatus described in any one of claims 1 to 6, wherein the vertical distance between the boundary between the second surface and the third surface and the lower surface of the substrate is 0.6 mm or more and 1.0 mm or less.

[0016] The invention described in claim 8 is a substrate processing apparatus described in any one of claims 1 to 7, wherein the second surface is an inclined surface extending radially outward and upward from the outer peripheral edge of the first surface at a predetermined inclination angle, and the inclination angle of the second surface is 15° or less.

[0017] A ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the second surface has a radial length of 10 mm or more.

[0018] The invention described in claim 10 is a substrate processing apparatus described in any one of claims 1 to 9, wherein the vertical distance between the first surface and the lower surface of the substrate is 0.6 mm or more and 1.5 mm or less. [Effects of the Invention]

[0019] According to the present invention, it is possible to improve the stability of holding the substrate while suppressing adhesion of the processing liquid to the underside of the substrate. [Brief explanation of the drawings]

[0020] [Figure 1] 1 is a plan view showing a substrate processing system according to an embodiment; [Figure 2] FIG. 2 is a side view showing the configuration of the substrate processing apparatus. [Figure 3] FIG. 2 is a plan view showing a substrate holding part. [Figure 4] FIG. 3 is a cross-sectional view showing a part of the substrate holding part. [Figure 5] FIG. 4 is a cross-sectional view showing the outer periphery of the substrate holding part. [Figure 6] FIG. 4 is a cross-sectional view showing the outer periphery of the substrate holding part. [Figure 7A] FIG. 10 is a diagram showing the flow of gas near the outer periphery of the substrate. [Figure 7B] FIG. 10 is a diagram showing the flow of gas near the outer periphery of the substrate. [Figure 7C] FIG. 10 is a diagram showing the flow of gas near the outer periphery of the substrate. [Figure 8A] FIG. 10 is a diagram showing the flow of gas near the outer periphery of the substrate. [Figure 8B] FIG. 10 is a diagram showing the flow of gas near the outer periphery of the substrate. [Figure 8C] FIG. 10 is a diagram showing the flow of gas near the outer periphery of the substrate. DETAILED DESCRIPTION OF THE INVENTION

[0021] 1 is a schematic plan view showing the layout of a substrate processing system 10 including a substrate processing apparatus according to one embodiment of the present invention. The substrate processing system 10 processes semiconductor substrates 9 (hereinafter simply referred to as "substrates 9"). The substrate processing system 10 includes an indexer block 101 and a processing block 102 coupled to the indexer block 101.

[0022] The indexer block 101 includes a carrier holding unit 104, an indexer robot 105, and an IR movement mechanism 106. The carrier holding unit 104 holds a plurality of carriers 107, each capable of accommodating a plurality of substrates 9. The plurality of carriers 107 (e.g., FOUPs) are held by the carrier holding unit 104 while being arranged in a predetermined carrier arrangement direction. The IR movement mechanism 106 moves the indexer robot 105 in the carrier arrangement direction. The indexer robot 105 performs an unloading operation to unload the substrates 9 from the carriers 107, and a loading operation to load the substrates 9 into the carriers 107 held by the carrier holding unit 104. The substrates 9 are transported by the indexer robot 105 in a horizontal position.

[0023] The processing block 102 includes a plurality of (for example, four or more) processing units 108 that process substrates 9, and a center robot 109. The processing units 108 are arranged to surround the center robot 109 in a plan view. The processing units 108 perform various processes on the substrates 9. A substrate processing apparatus, which will be described later, is one of the processing units 108. The center robot 109 performs a loading operation to load the substrate 9 into the processing unit 108 and an unloading operation to unload the substrate 9 from the processing unit 108. Furthermore, the center robot 109 transports the substrate 9 between the plurality of processing units 108. The substrate 9 is transported in a horizontal position by the center robot 109. The center robot 109 receives the substrate 9 from the indexer robot 105 and passes the substrate 9 to the indexer robot 105.

[0024] FIG. 2 is a side view showing the configuration of the substrate processing apparatus 1. FIG. 2 depicts a cross section of a portion of the configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates 9 one by one. The substrate processing apparatus 1 supplies a processing liquid to the substrates 9 to perform liquid processing. In this liquid processing, for example, foreign matter that has adhered to the substrates 9 during processing prior to being loaded into the substrate processing apparatus 1 is removed (i.e., cleaned). The foreign matter is, for example, residue that remains on the surface of the substrate 9 during a grinding process performed on the substrate 9. In the following description, the upper and lower sides in FIG. 2 will also be simply referred to as the "upper side" and "lower side."

[0025] The substrate processing apparatus 1 includes a substrate holding unit 2, a substrate rotation mechanism 33, a cup unit 4, a processing liquid supply unit 51, a processing unit movement mechanism 52, and a chamber 11. The substrate holding unit 2, the substrate rotation mechanism 33, the cup unit 4, the processing liquid supply unit 51, etc. are housed in the internal space of the chamber 11. An airflow forming unit 12 is provided in the canopy of the chamber 11, which supplies gas to the internal space and forms an airflow that flows downward (so-called downflow). For example, an FFU (fan filter unit) is used as the airflow forming unit 12. Substrate processing equipment 1 In this case, an airflow forming unit 12 other than the FFU may be provided.

[0026] The substrate holder 2 and the substrate rotation mechanism 33 are each part of a spin chuck that holds and rotates the substantially disk-shaped substrate 9. The substrate holder 2 holds the horizontally positioned substrate 9 from below. The substrate holder 2 is a Bernoulli chuck that adsorbs and holds the substrate 9 by the Bernoulli effect. The substrate 9 is, for example, a substantially disk-shaped substrate with a diameter of 300 mm.

[0027] Fig. 3 is a plan view showing the substrate holding unit 2. Fig. 4 is a cross-sectional view of the substrate holding unit 2 taken along line IV-IV in Fig. 3. In Fig. 4, the substrate 9 held by the substrate holding unit 2 is indicated by a two-dot chain line. As shown in Figs. 3 and 4, the substrate holding unit 2 includes a base unit 21, a plurality of support pins 22, and a gas supply unit 23.

[0028] The base portion 21 is a substantially disk-shaped member centered on a central axis J1 facing the up-down direction. The substrate 9 is disposed above the base portion 21 at a distance from the base portion 21. An upper main surface 210 of the base portion 21 (hereinafter also referred to as the "base surface 210") faces a lower main surface (hereinafter also referred to as the "lower surface 92") of the substrate 9 in the up-down direction, at a position spaced downward from the lower main surface of the substrate 9. The diameter of the base portion 21 is larger than the diameter of the substrate 9, and the base surface 210 extends radially outward from the outer periphery of the substrate 9 all around.

[0029] The multiple support pins 22 are arranged on the base surface 210 of the base portion 21 while being spaced apart from one another in the circumferential direction (hereinafter simply referred to as the "circumferential direction") around the central axis J1. The multiple support pins 22 are arranged on the same circumference around the central axis J1. The multiple support pins 22 are arranged, for example, at approximately equal angular intervals in the circumferential direction. In the example shown in FIG. 3, the number of the multiple support pins 22 is 30. The multiple support pins 22 are protrusions that protrude upward from the base surface 210. Each support pin 22 has, for example, an approximately hemispherical shape. The multiple support pins 22 are fixed to the base portion 21 and do not move relative to the base portion 21. The substrate holding portion 2 holds the substrate 9 in an approximately horizontal position without contacting the central portion of the lower surface 92 of the substrate 9 by bringing the multiple support pins 22 into contact with the outer periphery of the lower surface 92 of the substrate 9 from below.

[0030] The gas supply unit 23 includes a plurality of gas outlets 232 provided on the base surface 210 of the base unit 21. The plurality of gas outlets 232 are arranged at positions overlapping with the substrate 9 in a plan view, and spaced apart below the lower surface 92 of the substrate 9. The plurality of gas outlets 232 are arranged at positions spaced apart radially outward from the central axis J1, on the same circumference about the central axis J1, and spaced apart from one another in the circumferential direction. The number of the plurality of gas outlets 232 is, for example, 150. The plurality of gas outlets 232 are arranged radially inward from the plurality of support pins 22 and circumferentially below the outer periphery of the substrate 9.

[0031] The multiple gas outlets 232 are connected to a gas supply source (not shown) via gas flow paths 231 provided inside the base portion 21. Gas is discharged from each gas outlet 232 radially outward and upward (i.e., diagonally upward). The shape of the gas outlet 232 as viewed along the gas discharge direction from the gas outlet 232 is, for example, approximately circular. The shape of the gas outlet 232 may be modified in various ways. The arrangement and number of the gas outlets 232 may also be modified in various ways.

[0032] The gas supply unit 23 further includes a central gas outlet 234 provided in the center of the base surface 210. The central gas outlet 234 is, for example, a single outlet that is arranged downwardly and spaced apart from the lower surface 92 of the substrate 9 at a position that overlaps with the central axis J1 in a plan view. The central gas outlet 234 is connected to the gas supply source via a gas flow path 233 provided inside the base unit 21. Gas is discharged from the central gas outlet 234 in a substantially vertically upward direction (i.e., along the central axis J1). The shape of the central gas outlet 234 when viewed along the gas discharge direction from the central gas outlet 234 is, for example, substantially circular. The shape of the central gas outlet 234 may be modified in various ways. The arrangement and number of the central gas outlets 234 may also be modified in various ways.

[0033] In the gas supply unit 23, gas is delivered from the central gas delivery port 234 and the multiple gas delivery ports 232 to the space between the lower surface 92 of the substrate 9 and the base surface 210 of the base unit 21 (hereinafter also referred to as the "lower space 90"). The gas is, for example, an inert gas such as nitrogen gas, or air. The gas is, for example, a high-pressure gas or a compressed gas. The gas delivered from the central gas delivery port 234 and the multiple gas delivery ports 232 flows radially outward in the lower space 90. As a result, an airflow is formed in the lower space 90 that flows radially outward from the radial center (hereinafter also simply referred to as the "center"), and a pressure drop occurs in the lower space 90 due to the Bernoulli effect caused by the airflow. As a result, the substrate 9 is adsorbed to the substrate holder 2. In other words, the air pressure in the lower space 90 becomes lower than the air pressure above the substrate 9 (i.e., it becomes negative pressure), and the difference in air pressure between the top and bottom of the substrate 9 presses the substrate 9 against the multiple support pins 22 of the substrate holding part 2, fixing its position (i.e., holding it in place).

[0034] When substrate 9 is held by substrate holder 2, base 21, central gas outlet 234, and multiple gas outlets 232 are spaced downward from substrate 9 and are not in contact with substrate 9. When substrate 9 is not attached to substrate holder 2, substrate 9 can easily move upward from multiple support pins 22, and can also move approximately horizontally while in contact with multiple support pins 22 (i.e., slide sideways on multiple support pins 22).

[0035] In the substrate holding unit 2, a plurality of lift pins and a plurality of centering pins (not shown) are provided on the base surface 210 of the base unit 21. The plurality of lift pins and the plurality of centering pins are located radially outward of the plurality of support pins 22. The plurality of lift pins transfer the substrate 9 between the plurality of support pins 22 when the substrate 9 is loaded into or unloaded from the substrate processing apparatus 1. The plurality of centering pins adjust the horizontal position of the substrate 9 by horizontally pushing the outer periphery of the substrate 9 placed on the plurality of support pins 22 and not being held by suction.

[0036] As shown in FIG. 2, the substrate rotation mechanism 33 is disposed below the substrate holding unit 2. The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding unit 2 around the central axis J1. The substrate rotation mechanism 33 includes a shaft 331 and a motor 332. The shaft 331 is a substantially cylindrical member centered on the central axis J1. The shaft 331 extends in the vertical direction and is connected to the center of the lower surface of the base unit 21 of the substrate holding unit 2. The motor 332 is an electric rotary motor that rotates the shaft 331. When the motor 332 rotates the shaft 331, the base unit 21 connected to the shaft 331 is rotated together. Note that the substrate rotation mechanism 33 may include a motor having another structure (for example, a hollow motor, etc.).

[0037] The cup unit 4 includes an annular cup 41 centered on the central axis J1. The cup 41 is disposed around the entire circumference of the substrate 9 and the substrate holding unit 2, covering the sides of the substrate 9 and the substrate holding unit 2. The cup 41 is a liquid receiving container that receives liquid such as a processing liquid that splashes toward the surroundings from the rotating substrate 9. The cup 41 is stationary in the circumferential direction and does not rotate, regardless of whether the substrate holding unit 2 is rotating or stationary. A drain port (not shown) is provided at the bottom of the cup 41 to discharge the processing liquid received in the cup 41 to the outside of the chamber 11.

[0038] The cup 41 moves up and down by an elevating mechanism (not shown). The elevating mechanism includes, for example, an electric linear motor, an air cylinder, or a ball screw and an electric rotary motor. The cup unit 4 may include multiple cups 41 stacked in the radial direction. When the cup unit 4 includes multiple cups 41, each of the multiple cups 41 can move up and down independently, and the multiple cups 41 are switched to be used to receive the processing liquid depending on the type of processing liquid splashed from the substrate 9.

[0039] The processing liquid supply unit 51 supplies a processing liquid (e.g., a cleaning liquid) to the upper surface 91 of the substrate 9. The processing liquid supply unit 51 includes an upper nozzle 511 that ejects the processing liquid toward the upper surface 91 of the substrate 9. The upper nozzle 511 is, for example, a two-fluid nozzle that mixes the processing liquid with a gas and sprays the processing liquid toward the upper surface 91 of the substrate 9. In the processing liquid supply unit 51, the processing liquid is pulverized by colliding with a high-speed gas flow, and the atomized processing liquid is sprayed at high speed toward the upper surface 91 of the substrate 9. This physically cleans the upper surface 91 of the substrate 9, removing foreign matter adhering to the upper surface 91 of the substrate 9. The processing liquid is, for example, DIW or CO2 water. The gas is, for example, an inert gas such as nitrogen gas, or air. The gas is, for example, a high-pressure gas or a compressed gas.

[0040] The processing unit moving mechanism 52 is a swinging mechanism that swings the upper nozzle 511 of the processing liquid supply unit 51 approximately horizontally in the space above the substrate 9. The processing unit moving mechanism 52 includes an arm 521 and an arm rotating mechanism 522. The arm 521 is a rod-shaped member that extends approximately horizontally. The upper nozzle 511 is fixed to one end of the arm 521, and the other end is connected to the arm rotating mechanism 522 that is positioned radially outside the cup unit 4. The arm rotating mechanism 522 rotates the arm 521 approximately horizontally around a rotation axis that extends in the vertical direction.

[0041] The processing unit moving mechanism 52 reciprocates the upper nozzle 511, which discharges the processing solution onto the rotating substrate 9, between a first position that vertically faces the center of the upper surface 91 of the substrate 9 and a second position that is located radially outward from the first position. The second position is preferably vertically facing the outer periphery of the upper surface 91 of the substrate 9. This allows the above-mentioned physical cleaning process to be performed over substantially the entire upper surface 91 of the substrate 9. After the cleaning process is completed, the processing unit moving mechanism 52 moves the upper nozzle 511 of the processing solution supply unit 51 from the space above the substrate 9 to a retracted position radially outward from the outer periphery of the substrate 9. The arm rotation mechanism 522 of the processing unit moving mechanism 52 includes, for example, an electric rotary motor. The processing unit moving mechanism 52 may have another structure.

[0042] 4, the base surface 210 of the base portion 21 extends radially outward from the central axis J1 in a substantially horizontal manner, and forms an inclined surface that extends radially outward and upward below the outer periphery of the substrate 9. The base surface 210 extends downward radially outward from the multiple support pins 22, and forms a horizontal surface that extends radially outward from a position radially outward from the outer periphery of the substrate 9 in a plan view. The base surface 210 extends radially outward and downward from the radial outer end of the horizontal surface.

[0043] 3 and 4, the base surface 210 includes a first surface 211, a second surface 212, a third surface 213, a fourth surface 214, and a fifth surface 215. The first surface 211, the second surface 212, the third surface 213, the fourth surface 214, and the fifth surface 215 are continuous in this order from the central axis J1 radially outward. The first surface 211 is a substantially circular surface that extends substantially horizontally (i.e., substantially perpendicular to the central axis J1) around the central axis J1. The first surface 211 faces the center of the substrate 9 in the up-down direction.

[0044] The second surface 212 is a substantially annular surface below the substrate 9 that extends radially outward from the substantially circumferential outer periphery of the first surface 211. The outer periphery of the first surface 211 (i.e., the boundary between the first surface 211 and the second surface 212) overlaps with the substrate 9 in a plan view. In the following description, "below the substrate 9" means a position that overlaps with the substrate 9 in a plan view and is lower in the up-down direction than the lower surface 92 of the substrate 9. The second surface 212 is a sloping surface that slopes upward as it extends radially outward from the outer periphery of the first surface 211. In the example shown in FIG. 4, the entire second surface 212 is located below the lower surface 92 of the substrate 9 in the up-down direction. The vertical cross section of the second surface 212 is substantially linear, and the inclination angle (acute angle) of the second surface 212 with respect to the horizontal direction is substantially constant. In other words, the second surface 212 is a flat inclined surface that slopes upward at a predetermined inclination angle as it extends radially outward from the outer circumferential edge of the first surface 211. Note that the second surface 212 may be a curved surface that is convex radially inward and upward, for example.

[0045] The above-mentioned plurality of support pins 22 are arranged on the second surface 212. The plurality of support pins 22 are located radially inward of the substantially circumferential outer periphery of the second surface 212 (i.e., the upper edge of the second surface 212), and protrude upward from the second surface 212. The above-mentioned plurality of gas delivery ports 232 are provided on the boundary between the second surface 212 and the first surface 211, or on the first surface 211 radially inward of the boundary.

[0046] The third surface 213 is a substantially annular surface that continues to the outer periphery of the second surface 212 below the lower surface 92 of the substrate 9 in the up-down direction. In the example shown in FIG. 4 , the outer periphery of the second surface 212 (i.e., the boundary between the second surface 212 and the third surface 213) overlaps with the substrate 9 in a plan view. In other words, the third surface 213 continues to the outer periphery of the second surface 212 below the substrate 9. The third surface 213 is an inclined surface that slopes downward as it extends radially outward from the outer periphery of the second surface 212. The third surface 213 is, for example, a curved surface that is convex radially outward and upward. That is, the inclination angle (acute angle) of the third surface 213 with respect to the horizontal direction increases as it extends radially outward. The third surface 213 is, for example, a part of the outer surface of a substantially annular body centered on the central axis J1.

[0047] The third surface 213 may be a flat inclined surface with a substantially constant inclination angle, or may be a curved surface that is convex radially inward and downward. The third surface 213 may also be a surface that extends substantially vertically downward from the outer circumferential edge of the second surface 212. In this case, the third surface 213 is a substantially cylindrical surface centered on the central axis J1.

[0048] The fourth surface 214 is a substantially annular surface that extends radially outward from the substantially circumferential lower edge of the third surface 213. In the example shown in FIG. 4, the fourth surface 214 extends substantially horizontally from the lower edge of the third surface 213. In other words, the fourth surface 214 is a horizontal plane that extends substantially perpendicular to the central axis J1 at substantially the same vertical position as the lower edge of the third surface 213. The lower edge of the third surface 213 (i.e., the boundary between the third surface 213 and the fourth surface 214) is located radially outward from the outer peripheral edge of the substrate 9. Therefore, the entire fourth surface 214 is located radially outward from the outer peripheral edge of the substrate 9. Note that if the third surface 213 is an inclined surface that extends radially outward and downward from the outer peripheral edge of the second surface 212, the boundary between the third surface 213 and the fourth surface 214 is also the outer peripheral edge of the third surface 213.

[0049] In the base surface 210, the fourth surface 214 may be an inclined surface that slopes downward as it extends radially outward from the lower edge of the third surface 213. The boundary between the third surface 213 and the fourth surface 214 may be located at approximately the same position in the radial direction as the outer circumferential edge of the substrate 9. In this case, the inner circumferential edge of the fourth surface 214 overlaps with the outer circumferential edge of the substrate 9 in a plan view, 4th page 214 The portion of the base surface 210 other than the inner peripheral edge is located radially outward from the outer peripheral edge of the substrate 9 and does not overlap with the substrate 9 in plan view. In the base surface 210, the boundary between the third surface 213 and the fourth surface 214 may be located radially inward from the outer peripheral edge of the substrate 9. In this case, the inner peripheral portion of the fourth surface 214 overlaps with the outer peripheral portion of the substrate 9 in plan view, 4th page 214 The portion other than the inner periphery of the substrate 9 is located radially outward from the outer periphery of the substrate 9 and does not overlap with the substrate 9 in plan view.

[0050] The fifth surface 215 is a substantially annular surface that spreads radially outward from the substantially circumferential outer periphery of the fourth surface 214. The outer periphery of the fourth surface 214 (i.e., the boundary between the fourth surface 214 and the fifth surface 215) is located radially outward from the outer periphery of the substrate 9. The fifth surface 215 is an inclined surface that slopes downward as it extends radially outward from the outer periphery of the fourth surface 214. In the example shown in FIG. 4, the vertical cross section of the fifth surface 215 is substantially linear, and the inclination angle (acute angle) of the fifth surface 215 with respect to the horizontal direction is substantially constant. Note that the fifth surface 215 may be, for example, a curved surface that is convex radially outward and upward.

[0051] FIG. 5 is an enlarged view of the vicinity of the outer periphery of the base portion 21. Because FIG. 5 is a longitudinal cross-sectional view of the base portion 21 in a position where the support pins 22 are not arranged, the support pins 22 are depicted by two-dot chain lines in FIG. 5. In the substrate processing apparatus 1, as described above, gas discharged from the central gas outlet 234 (see FIG. 4) and the multiple gas outlets 232 forms an airflow in the lower space 90 that flows radially outward from the radial center. The Bernoulli effect of this airflow causes a pressure drop in the lower space 90, and the substrate 9 is attracted to the substrate holder 2. In FIG. 5, this airflow is conceptually indicated by an arrow labeled 93. In the substrate processing apparatus 1, the substrate 9 is rotated by the substrate rotation mechanism 33 (see FIG. 2), and the velocity of the airflow 93 is increased by centrifugal force. In other words, when the substrate 9 is rotating, the gas flow velocity in the lower space 90 flows radially outward. In this embodiment, the rotation speed of the substrate 9 is, for example, 200 rpm to 1500 rpm. The flow rate of the gas supplied from the central gas outlet 234 and the plurality of gas outlets 232 to the lower space 90 is, for example, 270 L / min to 300 L / min.

[0052] Furthermore, in the substrate processing apparatus 1, gas on the upper surface 91 of the substrate 9 moves radially outward due to centrifugal force caused by the rotation of the substrate 9. As a result, an airflow is formed on the upper surface 91 of the substrate 9, moving radially outward from the radial center. In FIG. 5, this airflow is conceptually indicated by arrows labeled 94. The airflow 94 moving radially outward along the upper surface 91 of the substrate 9 flows radially outward and downward along the base surface 210, radially outward of the outer periphery of the substrate 9, due to the Coanda effect between the upper surface 91 and the base surface 210. As a result, a downward force acts on a portion of the substrate 9 near the outer periphery, pressing the outer periphery of the substrate 9 against the multiple support pins 22. As a result, the stability of the substrate 9 held by the substrate holder 2 is improved. In other words, in the substrate processing apparatus 1, the substrate 9 is firmly held by the substrate holder 2 due to the Bernoulli effect of the airflow 93 and the Coanda effect of the airflow 94.

[0053] In the substrate processing apparatus 1, the processing liquid supplied onto the upper surface 91 of the substrate 9 moves radially outward due to the centrifugal force caused by the rotation of the substrate 9, as described above, and splashes radially outward from the outer periphery of the substrate 9. A force acting on the processing liquid near the outer periphery of the substrate 9 causes the processing liquid to wrap around to the lower surface 92 of the substrate 9 due to the negative pressure caused by the Bernoulli effect described above. Meanwhile, a force acting radially outward and downward from the outer periphery of the substrate 9 also acts on the processing liquid near the outer periphery of the substrate 9 due to the airflow 94 flowing from the outer periphery of the substrate 9 along the base surface 210 due to the Coanda effect described above. This prevents the processing liquid on the upper surface 91 of the substrate 9 from wrapping around to and adhering to the lower surface 92 of the substrate 9.

[0054] As described above, in the substrate holder 2, the second surface 212 of the base portion 21 is an inclined surface that slopes upward as it extends radially outward below the outer periphery of the substrate 9. This gradually reduces the vertical height (hereinafter simply referred to as "height") of the lower space 90 below the outer periphery of the substrate 9, thereby increasing the speed of the airflow 93. As a result, the suction force of the substrate 9 due to the Bernoulli effect (i.e., the force that presses the substrate 9 against the multiple support pins 22 due to the Bernoulli effect) can be increased. Furthermore, a relatively large vertical distance can be secured between the first surface 211 and the lower surface 92 of the substrate 9, which can prevent the substrate 9 from being pushed upward by the gas discharged from the central gas outlet 234 (see FIG. 4) and the multiple gas outlets 232.

[0055] In the substrate holding unit 2, the third surface 213 that extends downward from the outer circumferential edge of the second surface 212 is provided, and this increases the force that presses the substrate 9 against the plurality of support pins 22 by the Coanda effect. As a result, the stability of holding the substrate 9 can be improved. In addition, the airflow 94 caused by the Coanda effect can guide the processing liquid on the upper surface 91 of the substrate 9 downward from the outer circumferential edge, and therefore the processing liquid can be prevented from flowing around to the lower surface 92 (i.e., moving radially inward from the outer circumferential edge of the substrate 9).

[0056] In the substrate holding unit 2, the fourth surface 214 is provided, which extends radially outward from the outer peripheral edge of the third surface 213. This allows the airflow 94, which flows downward from the outer peripheral edge of the substrate 9, to be guided radially outward by the Coanda effect. This further prevents the processing liquid on the upper surface 91 of the substrate 9 from flowing around and adhering to the lower surface 92 of the substrate 9. Furthermore, since the fourth surface 214 does not extend above the lower edge of the third surface 213, the airflow 94 is suitably formed to flow radially outward and downward from the outer peripheral edge of the substrate 9. This further improves the stability of the holding of the substrate 9. From the viewpoint of improving the stability of the holding of the substrate 9, it is preferable that no annular structure or the like that protrudes upward is provided on the fourth surface 214.

[0057] In the substrate holding unit 2, a fifth surface 215 is further provided that faces downward as it faces radially outward from the outer periphery of the fourth surface 214, and thereby airflow 93 that faces radially outward along the fourth surface 214 is guided obliquely downward. This makes it possible to prevent the airflow 93 from colliding (i.e., merging) with airflow 94 that faces radially outward and downward from the outer periphery of the substrate 9 and causing turbulence. As a result, downward pressure on the outer periphery of the substrate 9 is preferably realized by the Coanda effect, and the stability of holding the substrate 9 can be further improved.

[0058] As shown in FIG. 6, in the substrate holding unit 2, if the radial distance L1 between the boundary between the second surface 212 and the third surface 213 located below the substrate 9 (i.e., the inner peripheral edge of the third surface 213) and the outer peripheral edge of the substrate 9 is L1, the distance L1 is preferably 0.5 mm or more and 2.0 mm or less. By making the distance L1 0.5 mm or more, it is possible to prevent the airflow 93 (see FIG. 5) that passes radially outward through the boundary between the second surface 212 and the third surface 213 from flowing radially outward and upward from the outer peripheral edge of the substrate 9. This makes it possible to prevent the airflow 93 and the airflow 94 (see FIG. 5) due to the Coanda effect from colliding near the outer peripheral edge of the substrate 9 and generating turbulence. As a result, downward pressure on the outer peripheral portion of the substrate 9 due to the Coanda effect is preferably realized, and the stability of holding the substrate 9 can be further improved. On the other hand, by setting the distance L1 to 2.0 mm or less, the chucking force due to the Bernoulli effect can be preferably applied to the vicinity of the outer periphery of the substrate 9. As a result, the stability of holding the substrate 9 can be further improved.

[0059] In the substrate holder 2, the vertical distance L2 between the boundary between the second surface 212 and the third surface 213 and the lower surface 92 of the substrate 9 is preferably 0.6 mm or more and 1.0 mm or less. By setting the distance L2 to 0.6 mm or more, the speed of the airflow 93 passing radially outward along the boundary between the second surface 212 and the third surface 213 can be prevented from becoming excessively high. This prevents the airflow 93 and the airflow 94 due to the Coanda effect from colliding near the outer periphery of the substrate 9, thereby preventing turbulence from occurring. As a result, downward pressure on the outer periphery of the substrate 9 due to the Coanda effect is effectively achieved, further improving the stability of the substrate 9. On the other hand, by setting the distance L2 to 1.0 mm or less, a decrease in the speed of the airflow 93 below the outer periphery of the substrate 9 can be prevented, preventing the suction force of the substrate 9 due to the Bernoulli effect from becoming too small. Furthermore, the negative pressure due to the Bernoulli effect can effectively prevent the processing liquid near the outer periphery of the substrate 9 from flowing around to the lower surface 92 of the substrate 9. As a result, adhesion of the processing liquid to the lower surface 92 of the substrate 9 can be further prevented.

[0060] In the substrate holder 2, the inclination angle θ of the second surface 212 is preferably 15° or less. This can suppress excessive pressure buildup in the lower space 90 near the multiple support pins 22. As a result, the suction of the substrate 9 due to the Bernoulli effect is prevented from being hindered by the excessive pressure buildup, further improving the stability of holding the substrate 9. Note that when the second surface 212 is a curved surface that is convex radially inward and upward, the inclination angle θ is the angle (acute angle) formed between an imaginary line connecting the inner and outer peripheries of the second surface 212 and a line extending horizontally in a vertical cross section of the substrate holder 2 passing through the central axis J1. There is no particular lower limit to the inclination angle θ of the second surface 212, but in reality, the inclination angle θ is 10° or greater.

[0061] In the substrate holder 2, the radial length L3 of the second surface 212 (i.e., the shortest radial distance between the inner and outer peripheral edges of the second surface 212) is preferably 10 mm or more. This makes it possible to increase the speed of the airflow 93 below the outer periphery of the substrate 9 without making the inclination angle θ of the second surface 212 excessively large. As a result, the suction force of the substrate 9 due to the Bernoulli effect is suitably increased, and the stability of the holding of the substrate 9 can be further improved. There is no particular upper limit to the radial length L3 of the second surface 212, but in reality, the length L3 is 20 mm or less.

[0062] In the substrate holder 2, the distance L4 in the vertical direction between the first surface 211 and the lower surface 92 of the substrate 9 is preferably 0.6 mm or more and 1.5 mm or less. When the distance L4 is 0.6 mm or more, the substrate 9 can be prevented from being pushed upward by the gas discharged from the central gas outlet 234 (see FIG. 4) and the plurality of gas outlets 232. Furthermore, when the distance L4 is 1.5 mm or less, a decrease in the speed of the airflow 93 below the substrate 9 can be prevented, and the suction force of the substrate 9 due to the Bernoulli effect can be prevented from becoming too small. As a result, the stability of the holding of the substrate 9 can be further improved.

[0063] In the substrate holder 2, the vertical height L5 of the third surface 213 (i.e., the vertical distance between the upper and lower edges of the third surface 213) is preferably 1 mm or more. This strengthens the Coanda effect and further improves the stability of holding the substrate 9. There is no particular upper limit to the height L5 of the third surface 213, but in reality, the height L5 is 10 mm or less.

[0064] As described above, the substrate processing apparatus 1 for processing a substrate 9 includes a substrate holding unit 2, a substrate rotation mechanism 33, and a processing liquid supply unit 5. The substrate holding unit 2 holds the substrate 9 in a horizontal position. The substrate rotation mechanism 33 rotates the substrate holding unit 2 about a central axis J1 facing in the vertical direction. The processing liquid supply unit 5 supplies a processing liquid to the upper surface 91 of the substrate 9. The substrate holding unit 2 includes a base unit 21, a plurality of support pins 22, and a gas supply unit 23. The base unit 21 faces the lower surface 92 of the substrate 9. The base unit 21 has a base surface 210 that extends radially outward from the outer periphery of the substrate 9. The plurality of support pins 22 are arranged in the circumferential direction on the base surface 210. The plurality of support pins 22 protrude upward from the base surface 210 and contact the outer periphery of the lower surface 92 of the substrate 9. The gas supply unit 23 delivers gas between the lower surface 92 of the substrate 9 and the base surface 210 of the base unit 21 to form a radially outward airflow 93, which generates a pressure drop in the space between the substrate 9 and the base unit 21 (i.e., the lower space 90) due to the Bernoulli effect.

[0065] The base surface 210 includes a first surface 211, a second surface 212, a third surface 213, and a fourth surface 214. The first surface 211 is a horizontal, circular surface that faces the center of the substrate 9 in the up-down direction. The second surface 212 is an annular surface that extends radially outward from the outer periphery of the first surface 211 below the substrate 9. The second surface 212 extends upward as it extends radially outward. The above-mentioned multiple support pins 22 are arranged on the second surface 212. The third surface 213 is an annular surface that continues to the outer periphery of the second surface 212 below the lower surface 92 of the substrate 9. The third surface 213 extends vertically downward from the outer periphery of the second surface 212. Alternatively, the third surface 213 extends downward as it extends radially outward from the outer periphery of the second surface 212. The fourth surface 214 is an annular surface that is continuous with the lower edge of the third surface 213. The fourth surface 214 extends radially outward on a radially outer side than the outer circumferential edge of the substrate 9. The gas supply unit 23 includes a circumferential gas delivery port 232 that is provided on the boundary between the first surface 211 and the second surface 212 or on the first surface 211 and delivers gas radially outward.

[0066] In the substrate processing apparatus 1, as described above, the Bernoulli effect caused by the airflow 93 and the airflow 94 caused by the Coanda effect can suppress adhesion of the processing liquid to the underside 92 of the substrate 9 and can also improve the stability of holding the substrate 9.

[0067] In the substrate processing apparatus 1, it is preferable that the fourth surface 214 extends at the same vertical position as the lower edge of the third surface 213, or that the fourth surface 214 extends downward as it extends radially outward from the lower edge of the third surface 213. This allows the airflow 94 that flows downward from the outer peripheral edge of the substrate 9 to be suitably guided radially outward due to the Coanda effect, as described above. As a result, adhesion of the processing liquid to the lower surface 92 of the substrate 9 can be further suppressed, and the stability of holding the substrate 9 can also be further improved.

[0068] In the substrate processing apparatus 1, it is preferable that the base surface 210 further includes an annular fifth surface 215 that extends downward as it extends radially outward from the outer circumferential edge of the fourth surface 214. This strengthens the Coanda effect, as described above, and further improves the stability of holding the substrate 9.

[0069] As described above, third surface 213 is preferably a curved surface that extends downward as it extends radially outward from the outer circumferential edge of second surface 212 and that is convex radially outward and upward. This strengthens the Coanda effect and further improves the stability of holding substrate 9.

[0070] 7A to 7C are diagrams obtained by CFD (Computational Fluid Dynamics) simulation of the gas flow when the shape of third surface 213 is changed. FIGS. 7A to 7C show the gas flow near the outer periphery of substrate 9. The CFD simulation was performed using Ansys Fluent manufactured by Ansys, Inc., with the substrate 9 rotation speed set to 1500 rpm and the gas supply flow rate from gas supply unit 23 (see FIG. 4) to lower space 90 set to 300 L / min. Note that although the shape of second surface 212 in FIGS. 7A to 7C is slightly different from the above example, the trends in the CFD simulation results are not significantly different.

[0071] In FIG. 7A, the third surface 213 is a curved surface that extends radially outward and downward from the outer circumferential edge of the second surface 212 and is convex radially outward and upward. The inclination angle of the third surface 213 with respect to the horizontal direction (i.e., the angle (acute angle) between an imaginary line connecting the inner and outer circumferential edges of the third surface 213 and a line extending horizontally in a vertical cross section of the substrate holding unit 2 passing through the central axis J1) is approximately 50°. In FIG. 7B, the third surface 213 is a flat inclined surface that extends radially outward and downward from the outer circumferential edge of the second surface 212. The inclination angle of the third surface 213 with respect to the horizontal direction is approximately 45°. From the viewpoint of suitably generating the above-mentioned Coanda effect, the inclination angle of the third surface 213 shown in FIGS. 7A and 7B is preferably 30° or greater. In FIG. 7C, third surface 213 is a cylindrical surface that extends vertically downward from the outer periphery of second surface 212.

[0072] 7A to 7C, when third surface 213 is the curved surface (corresponding to FIG. 7A), the gas flow from above to radially outward of substrate 9 is most strongly recessed downward near the outer periphery of substrate 9 (i.e., radially outside the outer periphery of substrate 9), and it can be seen that the Coanda effect is greatest. When third surface 213 is the curved surface, the holding force (i.e., suction force) acting on substrate 9 is approximately 1% to 2% greater than the holding force when third surface 213 is the inclined surface or cylindrical surface (corresponding to FIG. 7B or 7C).

[0073] In the substrate processing apparatus 1, the third surface 213 is preferably continuous with the outer peripheral edge of the second surface 212 below the substrate 9. This makes it possible to prevent turbulence from occurring due to collision between an airflow 93 (see FIG. 5) that passes radially outward across the boundary between the second surface 212 and the third surface 213 and an airflow 94 (see FIG. 5) that flows radially outward and downward from the outer peripheral edge of the substrate 9 due to the Coanda effect, near the outer peripheral edge of the substrate 9. This makes it possible to preferably press the outer peripheral portion of the substrate 9 downward due to the Coanda effect, further improving the stability of holding the substrate 9.

[0074] 8A to 8C are diagrams obtained by CFD simulation of gas flow when the positional relationship between the boundary between second surface 212 and third surface 213 and the outer periphery of substrate 9 is changed. In FIGS. 8A to 8C, the CFD simulation showing the gas flow near the outer periphery of substrate 9 was performed using Ansys Fluent manufactured by Ansys, Inc., with the rotation speed of substrate 9 set to 1000 rpm and the gas supply flow rate from gas supply unit 23 to lower space 90 set to 300 L / min. Note that in FIGS. 8A to 8C, the shapes of second surface 212 and third surface 213 are slightly different from those in the above example, but the trends in the CFD simulation results are not significantly different.

[0075] In FIG. 8A, the boundary between the second surface 212 and the third surface 213 is located below the substrate 9, and the distance L1 (i.e., the radial distance between the boundary between the second surface 212 and the third surface 213 and the outer periphery of the substrate 9) is 0.5 mm. In FIG. 8B, the boundary between the second surface 212 and the third surface 213 is located below the substrate 9, and the distance L1 is 3.5 mm. In FIG. 8C, the boundary between the second surface 212 and the third surface 213 is not located below the substrate 9, but is located radially outward from the outer periphery of the substrate 9. The boundary between the second surface 212 and the third surface 213 is located 3.0 mm radially outward from the position shown in FIG. 8A.

[0076] 8C , when the boundary between the second surface 212 and the third surface 213 is not located below the substrate 9, a gas flow directed radially outward from above the substrate 9 collides with a gas flow directed radially outward from below the substrate 9 near the outer periphery of the substrate 9 (i.e., radially outside the outer periphery of the substrate 9), generating a turbulent flow. On the other hand, when the boundary between the second surface 212 and the third surface 213 is located below the substrate 9, a collision between a gas flow directed radially outward from above the substrate 9 and a gas flow directed radially outward from below the substrate 9 is suppressed near the outer periphery of the substrate 9. As a result, downward pressure on the outer periphery of the substrate 9 due to the Coanda effect is suitably realized, and the stability of holding the substrate 9 is improved. The holding force (i.e., suction force) acting on the substrate 9 when the boundary between the second surface 212 and the third surface 213 is located below the substrate 9 is approximately 7% to 8% greater than the holding force when the boundary is not located below the substrate 9.

[0077] 8A and 8B, when the distance L1 is 0.5 mm or more and 2.0 mm or less (corresponding to FIG. 8A), the gas flow directed radially outward from above the substrate 9 is significantly recessed downward near the outer periphery of the substrate 9, compared to when the distance L1 is greater than 2.0 mm (corresponding to FIG. 8B). Therefore, it can be seen that when the distance L1 is 0.5 mm or more and 2.0 mm or less, the Coanda effect described above is enhanced, improving the stability of holding the substrate 9.

[0078] The above-described substrate processing apparatus 1 can be modified in various ways.

[0079] For example, the number and shape of the support pins 22 are not limited to the above example and may be changed in various ways. Furthermore, the number, shape, and arrangement of the gas delivery ports 232 are not limited to the above example and may be changed in various ways. For example, instead of the multiple gas delivery ports 232, a single gas delivery port having a substantially annular shape centered on the central axis J1 may be provided on the base surface 210.

[0080] In the substrate holder 2, the shape and dimensions of the base surface 210 are not limited to the above example and may be modified in various ways. For example, the vertical distance L4 between the first surface 211 and the lower surface 92 of the substrate 9 may be less than 0.6 mm or greater than 1.5 mm. The vertical distance L2 between the boundary between the second surface 212 and the third surface 213 and the lower surface 92 of the substrate 9 may be less than 0.6 mm or greater than 1.0 mm. The radial distance L1 between the boundary between the second surface 212 and the third surface 213 and the outer circumferential edge of the substrate 9 may be less than 0.5 mm or greater than 2.0 mm.

[0081] In the substrate holder 2, the radial length L3 of the second surface 212 may be less than 10 mm. The inclination angle θ of the second surface 212 may be greater than 15°. The second surface 212 does not necessarily have to be inclined over the entire area from the inner peripheral edge to the outer peripheral edge; for example, the portion of the second surface 212 near the outer peripheral edge may be a horizontal plane that is approximately perpendicular to the central axis J1. In this case, a plurality of support pins 22 may be arranged on the horizontal plane.

[0082] In the substrate holder 2, the third surface 213 may be continuous with the outer circumferential edge of the second surface 212 radially outward of the outer circumferential edge of the substrate 9.

[0083] In the substrate holder 2, the fourth surface 214 may widen upward as it extends radially outward from the lower edge of the third surface 213. In addition, the base surface 210 does not necessarily include the fifth surface 215.

[0084] In the above example, the substrate 9 processed by the substrate processing apparatus 1 has been described as having a substantially uniform thickness in the vertical direction over the entire surface, but this is not limited thereto. For example, the substrate 9 may be a substrate whose outer periphery is thicker than the region inside the outer periphery (hereinafter also referred to as the "main portion"). The upper surface 91 of the substrate 9 is recessed downward in the main portion relative to the outer periphery. The substrate 9 is formed, for example, by grinding a portion of a substrate having a substantially uniform thickness, which corresponds to the main portion.

[0085] The substrate processing apparatus 1 may be used to process glass substrates used in flat panel displays such as liquid crystal displays or organic EL (Electro Luminescence) displays, or glass substrates used in other displays, in addition to semiconductor substrates. The substrate processing apparatus 1 may also be used to process substrates for optical disks, magnetic disks, magneto-optical disks, photomasks, ceramic substrates, and solar cell substrates.

[0086] The configurations in the above-described embodiment and each modification may be combined as appropriate as long as they are not mutually contradictory. [Explanation of symbols]

[0087] 1. Substrate processing equipment 2 Board holding part 5. Processing liquid supply unit 9 Substrate 21 Base 22 Support pin 23 Gas supply section 33 Substrate rotation mechanism 51 Processing liquid supply unit 90 Downward space 91 (board) top surface 92 (board) bottom 210 base surface 211 Page 1 212 2nd page 213 Page 3 214 Page 4 215 Page 5 232 Gas outlet J1 center axis

Claims

1. A substrate processing apparatus for processing a substrate, a substrate holder that holds the substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holder about a central axis facing in the vertical direction; a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate; Equipped with The substrate holder includes: a base portion having a base surface facing a lower surface of the substrate and extending radially outward from an outer peripheral edge of the substrate; a plurality of support pins arranged in a circumferential direction on the base surface, protruding upward from the base surface, and contacting an outer periphery of the lower surface of the substrate; a gas supply unit that supplies gas between the lower surface of the substrate and the base surface of the base unit to form an airflow that flows radially outward, thereby causing a pressure drop in a space between the substrate and the base unit by the Bernoulli effect; Equipped with The base surface is a first surface that is a horizontal circular surface that faces a central portion of the substrate in the up-down direction; a second surface that is an annular surface that extends radially outward from an outer circumferential edge of the first surface below the substrate, that extends radially outward and upward, and on which the plurality of support pins are arranged; a third surface that is an annular surface that is continuous with the outer peripheral edge of the second surface below the lower surface of the substrate and that extends vertically downward from the outer peripheral edge of the second surface or that extends downward as it extends radially outward; a fourth surface that is an annular surface that is continuous with the lower edge of the third surface and that extends radially outward beyond the outer circumferential edge of the substrate; Equipped with The substrate processing apparatus is characterized in that the gas supply unit has a circular gas outlet provided on the boundary between the first surface and the second surface or on the first surface, which delivers gas radially outward.

2. The substrate processing apparatus according to claim 1 , A substrate processing apparatus characterized in that the fourth surface extends at the same vertical position as the lower edge of the third surface, or extends downward as it extends radially outward from the lower edge of the third surface.

3. 3. The substrate processing apparatus according to claim 1, The substrate processing apparatus according to claim 1, wherein the base surface further includes a fifth surface having an annular shape that extends downward from an outer circumferential edge of the fourth surface toward the outside in the radial direction.

4. 4. The substrate processing apparatus according to claim 1, The substrate processing apparatus is characterized in that the third surface is a curved surface that extends downward as it extends radially outward from the outer peripheral edge of the second surface, and that is convex radially outward and upward.

5. 5. The substrate processing apparatus according to claim 1, The substrate processing apparatus according to claim 1, wherein the third surface is continuous with the outer periphery of the second surface below the substrate.

6. 6. The substrate processing apparatus according to claim 5, 10. The substrate processing apparatus according to claim 9, wherein the radial distance between the boundary between the second surface and the third surface and the outer periphery of the substrate is 0.5 mm or more and 2.0 mm or less.

7. 7. The substrate processing apparatus according to claim 1, 10. The substrate processing apparatus according to claim 1, wherein the distance in the vertical direction between the boundary between the second surface and the third surface and the lower surface of the substrate is 0.6 mm or more and 1.0 mm or less.

8. 8. The substrate processing apparatus according to claim 1, the second surface is an inclined surface extending radially outward and upward from the outer circumferential edge of the first surface at a predetermined inclination angle, The substrate processing apparatus according to claim 1, wherein the inclination angle of the second surface is 15° or less.

9. 9. The substrate processing apparatus according to claim 1, The substrate processing apparatus is characterized in that the radial length of the second surface is 10 mm or more.

10. 10. The substrate processing apparatus according to claim 1, 10. The substrate processing apparatus according to claim 9, wherein the distance in the vertical direction between the first surface and the lower surface of the substrate is 0.6 mm or more and 1.5 mm or less.

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