Bonding device, bonding system, bonding method, and storage medium

Abstract

To provide a technique for improving the joining accuracy of a substrate.SOLUTION: A joining device according to an embodiment includes a first holding unit, a first deforming unit, a second holding unit, a second deforming unit, a suction unit, and a control device. The first holding unit sucks and holds a first substrate from above. The first deforming unit projects the central portion of the first substrate held by the first holding unit downward. The second holding unit is provided below the first holding unit, and sucks and holds a second substrate joined to the first substrate from below. The second deforming unit projects the central portion of the second substrate held by the second holding unit upward. The suction unit generates different suction forces in a plurality of divided regions included in a suction region of the second substrate. The control device controls the suction unit.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a bonding device, a bonding system, a bonding method, and a storage medium. [Background technology]

[0002] Patent Document 1 discloses a bonding device that bonds substrates together by deforming a central portion of an upper substrate so that the central portion of the substrate protrudes downward. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-229787 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for improving the bonding accuracy of substrates. [Means for solving the problem]

[0005] A bonding device according to one aspect of the present disclosure includes a first holding unit, a first deformation unit, a second holding unit, a second deformation unit, a suction unit, and a control device. The first holding unit suction-holds a first substrate from above. The first deformation unit causes a central portion of the first substrate held by the first holding unit to protrude downward. The second holding unit is provided below the first holding unit and suction-holds a second substrate to be bonded to the first substrate from below. The second deformation unit causes a central portion of the second substrate held by the second holding unit to protrude upward. The suction unit generates different suction forces in multiple divided regions included in the suction region of the second substrate. The control device controls the suction unit. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the bonding accuracy of substrates. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing the configuration of a bonding system according to an embodiment. [Figure 2] FIG. 2 is a schematic diagram showing the state before the first substrate and the second substrate according to the embodiment are bonded together. [Figure 3] FIG. 3 is a schematic diagram showing a configuration of a part of the joining device according to the embodiment. [Figure 4] FIG. 4 is a schematic diagram showing the configuration of the first chuck portion and the second chuck portion according to the embodiment. [Figure 5] FIG. 5 is a schematic plan view showing the second holding portion according to the embodiment. [Figure 6] FIG. 6 is a flowchart illustrating the joining process according to the embodiment. [Figure 7] FIG. 7 is a diagram showing an example of distribution of suction forces in divided regions according to the embodiment. [Figure 8] FIG. 8 is a schematic diagram showing a state in which the bonding apparatus according to the embodiment starts bonding the first substrate and the second substrate. [Figure 9] FIG. 9 is a schematic diagram showing the configuration of a bonding system according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a detailed description will be given of a bonding device, a bonding system, a bonding method, and a storage medium (hereinafter referred to as "embodiments") according to the present disclosure, with reference to the drawings. Note that the bonding device, the bonding system, the bonding method, and the storage medium according to the present disclosure are not limited to these embodiments. Furthermore, the embodiments can be appropriately combined as long as the processing content is not contradictory. Furthermore, the same components in the following embodiments are designated by the same reference numerals, and redundant explanations will be omitted.

[0009] In addition, for ease of understanding, the drawings referred to below may show a Cartesian coordinate system in which mutually orthogonal X-, Y-, and Z-axis directions are defined, with the positive Z-axis direction being the vertically upward direction. The X- and Y-axes are horizontal. In the following description, the positive Z-axis direction may be referred to as the upward direction, and the negative Z-axis direction may be referred to as the downward direction.

[0010] <Configuration of the joining system> First, the configuration of a bonding system 1 according to an embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a schematic diagram showing the configuration of the bonding system 1 according to an embodiment. Fig. 2 is a schematic diagram showing the state before bonding of the first substrate W1 and the second substrate W2 according to the embodiment.

[0011] The bonding system 1 shown in FIG. 1 forms a laminated substrate T by bonding a first substrate W1 and a second substrate W2 together (see FIG. 2).

[0012] The first substrate W1 and the second substrate W2 are single-crystal silicon wafers having multiple electronic circuits formed on their surfaces. The first substrate W1 and the second substrate W2 have approximately the same diameter. Note that one of the first substrate W1 and the second substrate W2 may be a substrate on which no electronic circuits are formed.

[0013] 2, of the surfaces of the first substrate W1, the surface that is bonded to the second substrate W2 will be referred to as the "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as the "non-bonding surface W1n." Furthermore, of the surfaces of the second substrate W2, the surface that is bonded to the first substrate W1 will be referred to as the "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as the "non-bonding surface W2n."

[0014] 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is disposed on the negative X-axis direction side of the processing station 3 and is integrally connected thereto.

[0015] The loading / unloading station 2 comprises a mounting table 10 and a transport area 20. The mounting table 10 comprises a plurality of mounting plates 11. Each mounting plate 11 is mounted with cassettes C1 to C4, each of which stores a plurality of substrates (for example, 25 substrates) in a horizontal position. Cassette C1 can store a plurality of first substrates W1, cassette C2 can store a plurality of second substrates W2, and cassette C3 can store a plurality of superimposed substrates T. Cassette C4 is, for example, a cassette for recovering substrates that have become defective. Note that the number of cassettes C1 to C4 placed on the mounting plate 11 is not limited to that shown in the figure.

[0016] The transfer region 20 is disposed adjacent to the mounting table 10 on the positive side of the X axis. The transfer region 20 is provided with a transfer path 21 extending in the Y axis direction and a transfer device 22 that is movable along the transfer path 21. The transfer device 22 is movable not only in the Y axis direction but also in the X axis direction and is rotatable around the Z axis. The transfer device 22 transfers the first substrate W1, the second substrate W2, and the overlapped substrate T between the cassettes C1 to C4 placed on the mounting plate 11 and a third processing block G3 of the processing station 3, which will be described later.

[0017] In this manner, the carry-in / out station 2 transports the first substrate W1 and the second substrate W2 to the processing station 3, and the laminated substrate T in which the first substrate W1 and the second substrate W2 are bonded together is transported from the processing station.

[0018] For example, three processing blocks G1, G2, and G3 are provided in the processing station 3. The first processing block G1 is located on the rear side of the processing station 3 (the positive Y-axis side in FIG. 1). The second processing block G2 is located on the front side of the processing station 3 (the negative Y-axis side in FIG. 1), and the third processing block G3 is located on the loading / unloading station 2 side of the processing station 3 (the negative X-axis side in FIG. 1).

[0019] The first processing block G1 is provided with a surface modification device 30 that modifies the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2. The surface modification device 30 forms dangling bonds on the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2 by plasma irradiation, and then modifies the bonding surfaces W1j, W2j to make them more easily hydrophilic.

[0020] Specifically, in the surface modification device 30, for example, oxygen gas or nitrogen gas, which is a processing gas, is excited to plasma in a reduced pressure atmosphere. Then, the oxygen ions or nitrogen ions are irradiated onto the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2, whereby the bonding surfaces W1j, W2j are subjected to plasma processing and modified.

[0021] The first processing block G1 also includes a surface hydrophilization device 40. The surface hydrophilization device 40 hydrophilizes the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2 using, for example, pure water, and cleans the bonding surfaces W1j, W2j. Specifically, the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by, for example, a spin chuck. As a result, the pure water supplied onto the first substrate W1 or the second substrate W2 spreads over the bonding surfaces W1j, W2j of the first substrate W1 or the second substrate W2, thereby hydrophilizing the bonding surfaces W1j, W2j.

[0022] Here, an example is shown in which the surface modification device 30 and the surface hydrophilization device 40 are arranged side by side, but the surface hydrophilization device 40 may be stacked above or below the surface modification device 30.

[0023] A bonding device 41 is disposed in the second processing block G2. That is, the processing station 3 is equipped with the bonding device 41. The bonding device 41 bonds the hydrophilized first substrate W1 and second substrate W2 together by intermolecular forces. The specific configuration of the bonding device 41 will be described later.

[0024] A transfer region 60 is formed in the area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transfer device 61 is disposed in the transfer region 60. The transfer device 61 has a transfer arm that is movable, for example, vertically, horizontally, and around a vertical axis. The transfer device 61 moves within the transfer region 60 and transfers the first substrate W1, the second substrate W2, and the overlapped substrate T to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60.

[0025] The bonding system 1 also includes a control device 70. The control device 70 controls the operation of the bonding system 1. The control device 70 is, for example, a computer, and includes a control unit and a storage unit (not shown). The control unit includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc., and various circuits. The CPU of the microcomputer realizes the control described below by reading and executing a program stored in the ROM. The storage unit is realized by, for example, a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disk.

[0026] Such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit of the control device 70. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0027] <Joining equipment> As shown in Fig. 3, the joining device 41 includes a first holding mechanism 100 and a second holding mechanism 200. Fig. 3 is a schematic diagram showing the configuration of a part of the joining device 41 according to the embodiment.

[0028] The first holding mechanism 100 includes a rotation mechanism 101, a first height measurement unit 102, and a first chuck unit 103. The first holding mechanism 100 sucks and holds the first substrate W1 using the first chuck unit 103. Details of the first chuck unit 103 will be described later. Specifically, the first chuck unit 103 sucks and holds the non-bonding surface W1n of the first substrate W1.

[0029] The rotation mechanism 101 is attached to the ceiling 41a of the processing vessel of the bonding apparatus 41. The rotation mechanism 101 rotatably supports the first chuck portion 103. The rotation mechanism 101 rotates the first chuck portion 103 about an axis along the Z-axis direction.

[0030] The first height measuring unit 102 is attached to the ceiling 41a of the processing vessel. The first height measuring unit 102 may be attached to the rotation mechanism 101 or the first chuck unit 103. The first height measuring unit 102 measures the height of the bonding surface W2j of the second substrate W2.

[0031] The first height measurement unit 102 is, for example, an alignment camera using a CCD camera. The first height measurement unit 102 captures an image of the alignment pattern provided on the second substrate W2, recognizes the alignment pattern, and measures the height at which the image is focused as the height of the bonding surface W2j of the second substrate W2.

[0032] The first height measuring unit 102 may be a displacement sensor. The displacement sensor is, for example, a laser displacement meter. The displacement sensor measures the height of the bonding surface W2j of the second substrate W2 by irradiating laser light toward the second chuck unit 203 and the second substrate W2 and receiving the reflected light. The first holding mechanism 100 may include an alignment camera and a displacement sensor as the first height measuring unit 102.

[0033] The second holding mechanism 200 includes a moving mechanism 201, a second height measuring unit 202, and a second chuck unit 203. The second holding mechanism 200 suctions and holds the second substrate W2 using the second chuck unit 203. Details of the second chuck unit 203 will be described later. Specifically, the second chuck unit 203 suctions the non-bonding surface W2n of the second substrate W2.

[0034] The moving mechanism 201 moves the second height measuring unit 202 and the second chuck unit 203 in the horizontal direction and the vertical direction. The moving mechanism 201 includes a first moving mechanism 201a, a second moving mechanism 201b, and a third moving mechanism 201c.

[0035] The first moving mechanism 201a moves the second height measurement unit 202 and the second chuck unit 203 along rails that are provided on the floor 41b of the processing vessel of the bonding apparatus 41 and extend in the Y-axis direction. The second moving mechanism 201b is attached to the top of the first moving mechanism 201a. The second moving mechanism 201b moves the second height measurement unit 202 and the second chuck unit 203 along rails that are provided on the top surface of the first moving mechanism 201a and extend in the X-axis direction. The third moving mechanism 201c is attached to the second moving mechanism 201b and moves the second height measurement unit 202 and the second chuck unit 203 up and down.

[0036] The second height measuring unit 202 is attached to the second chuck unit 203. The second height measuring unit 202 measures the height of the bonding surface W1j of the first substrate W1. Like the first height measuring unit 102, the second height measuring unit 202 is an alignment camera or a displacement sensor.

[0037] <First chuck part> Next, the first chuck portion 103 will be described with reference to Fig. 4. Fig. 4 is a schematic diagram showing the configurations of the first chuck portion 103 and the second chuck portion 203 according to the embodiment.

[0038] The first chuck portion 103 includes a support portion 110 , a first holding portion 111 , a first suction portion 112 , and a first deformation portion 113 .

[0039] The support part 110 is rotatably attached to the rotation mechanism 101 (see FIG. 3). The support part 110 is formed in a circular shape. The support part 110 is formed with a first accommodation chamber 110a that accommodates the first deformation part 113. The first accommodation chamber 110a is formed in the center of the support part 110.

[0040] The first holding part 111 is attached to the lower surface of the support part 110 and fixed to the support part 110. The first holding part 111 is formed in a circular shape. A suction hole 120a and an insertion hole 120b are formed in the first holding part 111. The first holding part 111 sucks and holds the first substrate W1 from above.

[0041] Suction holes 120a are provided in the outer periphery and middle part of first holding part 111. A plurality of suction holes 120a are formed. Insertion hole 120b is formed in the center of first holding part 111, and a tip end of actuator 114a of first deformation part 113, which will be described later, is inserted into insertion hole 120b.

[0042] The first suction unit 112 is connected to the suction hole 120a. The first suction unit 112 is, for example, a vacuum pump. By drawing a vacuum using the first suction unit 112, the outer periphery of the first substrate W1 is sucked and held by the first holding unit 111.

[0043] The first deformation portion 113 is provided in a first housing chamber 110a formed in the support portion 110. A part of the first deformation portion 113 may be provided in the rotation mechanism 101 (see FIG. 3). The first deformation portion 113 includes an actuator 114a and a cylinder 114b.

[0044] The actuator 114a generates a constant pressure in a fixed direction using air supplied from an electropneumatic regulator (not shown). The actuator 114a can generate a constant pressure regardless of the position of the pressure application point. The tip of the actuator 114a abuts against the center of the top surface of the first substrate W1, and can control the pressure load applied to the center of the first substrate W1.

[0045] The cylinder 114b supports the actuator 114a. The cylinder 114b moves the actuator 114a up and down by, for example, a drive unit with a built-in motor.

[0046] The first deformation unit 113 controls the pressing load on the first substrate W1 using the actuator 114a, and controls the movement of the actuator 114a using the cylinder 114b. The first deformation unit 113 presses downward against the central portion of the first substrate W1, which is sucked and held by the first holding unit 111, causing the first substrate W1 to bend downward. In other words, the first deformation unit 113 causes the central portion of the first substrate W1 held by the first holding unit 111 to protrude downward. The first deformation unit 113 can adjust the amount of protrusion of the central portion of the first substrate W1 by controlling the amount of movement of the actuator 114a.

[0047] <Second chuck part> Next, the second chuck portion 203 will be described with reference to Fig. 4 and Fig. 5. Fig. 5 is a schematic plan view showing the second holding portion 211 according to the embodiment. The second chuck portion 203 includes a base portion 210, a second holding portion 211, a second suction portion 212, and a second deformation portion 213.

[0048] The base unit 210 is attached to the third movement mechanism 201c (see FIG. 3). The base unit 210 is circular. A storage chamber 210a that stores the measurement unit 240 is formed in the base unit 210. The storage chamber 210a is formed in the center of the base unit 210.

[0049] An insertion hole 210b is formed in the base portion 210. The insertion hole 210b communicates with the accommodation chamber 210a. The insertion hole 210b is formed in the center of the base portion 210.

[0050] The base portion 210 (an example of a base portion) forms a pressure variable space 243 (an example of a deformation space) between the base portion 210 and the second holding portion 211, which causes the second holding portion 211 to protrude upward when pressurized, and the second holding portion 211 is attached to the pressure variable space 243.

[0051] Furthermore, suction holes 210c and intake / exhaust holes 210d are formed in the base portion 210. A plurality of suction holes 210c are formed. A seal member 220 is provided around the suction holes 210c.

[0052] The seal member 220 is attached to the base portion 210 and seals the pressure variable space 243 and the suction hole 210c. The seal member 220 is expandable and contractible. The seal member 220 is, for example, a lip seal. The seal member 220 is attached to, for example, the protrusion 210e that protrudes upward from the base portion 210. The seal member 220 abuts against the lower surface of the second holding portion 211.

[0053] The second holding part 211 is provided below the first holding part 111, and suction-holds from below the second substrate W2 to be bonded to the first substrate W1. The second holding part 211 is provided above the base part 210. The second holding part 211 is circular. A fixing ring 222 is provided around the second holding part 211. The second holding part 211 is fixed to the base part 210 by the fixing ring 222.

[0054] The second holding part 211 is formed of a ceramic material such as alumina ceramic or silicon carbide. The second holding part 211 is expandable and contractible in the vertical and horizontal directions. The second holding part 211 can achieve a highly accurate flatness and high restorability.

[0055] The upper surface of the second holding portion 211 is circular. The diameter of the upper surface of the second holding portion 211 is larger than the diameter of the second substrate W2. The thickness of the central portion of the second holding portion 211 is larger than the thickness of the outer periphery. A first rib 211a (an example of a wall portion) is provided on the upper surface of the second holding portion 211. The first rib 211a may be provided separately from the second holding portion 211 and attached to the second holding portion 211, or may be provided integrally with the second holding portion 211. The first rib 211a divides the suction area of ​​the second substrate W2 into a plurality of divided regions 230. That is, the suction area of ​​the second substrate W2 includes a plurality of divided regions 230.

[0056] The first ribs 211a divide the suction region into a plurality of divided regions 230 so that the second substrate W2 is suction-held while distortion is suppressed, for example, in the X-axis direction, Y-axis direction, and oblique directions.

[0057] Specifically, the first rib 211a divides the suction region into a plurality of divided regions 230 along the radial direction of the second holding portion 211, i.e., the radial direction of the second substrate W2. For example, the first rib 211a divides the suction region into three divided regions 230 along the radial direction of the second holding portion 211. Note that the number of divided regions 230 divided along the radial direction of the second holding portion 211 is not limited to this, and it is sufficient that the suction region is divided into two or more divided regions 230.

[0058] The first ribs 211a also divide the suction region into a plurality of divided regions 230 along the circumferential direction of the second holding portion 211, that is, along the circumferential direction of the second substrate W2.

[0059] For example, the first rib 211a divides the divided region 230 formed on the outermost peripheral side of the second retaining portion 211 into a plurality of divided regions 230 along the circumferential direction of the second retaining portion 211. For example, the first rib 211a divides the divided region 230 formed on the outermost peripheral side of the second retaining portion 211 into eight divided regions 230 along the circumferential direction of the second retaining portion 211.

[0060] Furthermore, the first rib 211a divides the divided region 230, which is formed one region inward from the outermost peripheral side in the radial direction of the second holding portion 211, into a plurality of divided regions 230 along the circumferential direction of the second holding portion 211. For example, the first rib 211a divides the divided region 230, which is formed one region inward from the outermost peripheral side, into eight divided regions 230 along the circumferential direction of the second holding portion 211.

[0061] The number of divided regions 230 divided along the circumferential direction of the second holding portion 211 is not limited to this, and it is sufficient that the second holding portion 211 is divided into two or more divided regions 230.

[0062] Furthermore, the first rib 211a may divide the divided region 230 closest to the center in the radial direction of the second retaining portion 211 into a plurality of divided regions 230 along the circumferential direction of the second retaining portion 211. In other words, the first rib 211a further divides at least one of the divided regions 230 formed along the radial direction of the second retaining portion 211 into a plurality of divided regions 230 along the circumferential direction of the second retaining portion 211.

[0063] The first rib 211a may divide the suction region into a plurality of divided regions 230 along either the radial direction of the second holding portion 211 or the circumferential direction of the second holding portion 211.

[0064] A second rib 211b is provided on the lower surface of the second holding portion 211. When the upper surface of the second holding portion 211 is horizontal, the second rib 211b abuts against the base portion 210. A pressure variable space 243 is formed between the lower surface of the second holding portion 211 and the upper surface of the base portion 210.

[0065] Suction holes 211c are formed in the second holding portion 211. A plurality of suction holes 211c are formed. The suction holes 211c are formed corresponding to each divided region 230. That is, the suction holes 211c are formed for each divided region 230. In this way, a plurality of suction holes 211c corresponding to the plurality of divided regions 230 are formed in the second holding portion 211.

[0066] A seal member 220 abuts around the suction hole 211c on the lower surface of the second holding portion 211. The suction hole 211c communicates with a suction hole 210c formed in the base portion 210 via the seal member 220.

[0067] The second suction unit 212 includes a vacuum pump 250 and a plurality of regulators 251. The vacuum pump 250 is connected to each of the suction holes 210c via pipes 252. That is, the vacuum pump 250 is connected to a plurality of suction holes 211c formed in the second holding unit 211. The second suction unit 212 sucks the second substrate W2 through the plurality of suction holes 211c.

[0068] The regulators 251 are provided on pipes 252 connected to the suction holes 211c, and adjust the suction force at each suction hole 211c, that is, the suction force of the second substrate W2 in each divided region 230.

[0069] The vacuum pump 250 draws a vacuum and the regulators 251 are controlled to adjust the suction force of the second substrate W2 in each divided region 230, and the second substrate W2 is suction-held by the second holder 211. The second suction unit 212 is controlled by the control device 70 (see FIG. 1). That is, the vacuum pump 250 and the regulators 251 are controlled by the control device 70, and the suction force in each divided region 230 is adjusted. In this way, the second suction unit 212 (an example of a suction unit) generates different suction forces in the multiple divided regions 230 included in the suction region of the second substrate W2.

[0070] The second suction section 212 may be provided with a plurality of vacuum pumps 250, and the suction force of the second substrate W2 in each divided region 230 may be adjusted by the plurality of vacuum pumps 250.

[0071] The second deformation section 213 includes a vacuum pump 260 and an electropneumatic regulator 261 .

[0072] The vacuum pump 260 is connected to the intake / exhaust port 210d via a switching valve 262. The vacuum pump 260 draws a vacuum, thereby reducing the pressure in the pressure variable space 243. As the pressure in the pressure variable space 243 is reduced, the second rib 211b of the second holding portion 211 comes into contact with the base portion 210. In this case, the upper surface of the second holding portion 211 becomes horizontal.

[0073] The electropneumatic regulator 261 is connected to the intake / exhaust hole 210d via a switching valve 262. The electropneumatic regulator 261 supplies air to the pressure variable space 243, pressurizing the pressure variable space 243. This causes the second holding part 211 to be pressed from below. The outer periphery of the second holding part 211 is fixed to the base part 210 by a fixing ring 222. Therefore, when pressed from below, the center part of the second holding part 211 protrudes upward more than the outer periphery.

[0074] The switching valve 262 switches the connection state between the intake / exhaust hole 210d and the vacuum pump 260 and the electropneumatic regulator 261.

[0075] The second deforming section 213 applies pressure to the pressure variable space 243, thereby causing the central portion of the second substrate W2 held by the second holding section 211 to protrude upward. This causes the second substrate W2 to bend. In other words, the second deforming section 213 causes the central portion of the second substrate W2 held by the second holding section 211 to protrude relative to the outer periphery of the second substrate W2. The second deforming section 213 can adjust the pressure in the pressure variable space 243 to adjust the amount of protrusion of the central portion of the second substrate W2.

[0076] The measuring unit 240 measures the protrusion amount of the second holding unit 211, i.e., the protrusion amount of the central portion of the second substrate W2. The measuring unit 240 is, for example, a capacitance sensor. The capacitance sensor measures a change in capacitance formed between the sensor surface and the measurement target 240a as the distance between the sensor surface and the measurement target 240a.

[0077] The measurement target 240a is attached to the center of the underside of the second holding part 211 and moves up and down together with the second holding part 211. The measurement target 240a is inserted into the insertion hole 210b of the base part 210. A sealing member (not shown), for example, a V-ring, is provided around the measurement target 240a.

[0078] <Joining process> Next, the joining process according to the embodiment will be described with reference to the flowchart of Fig. 6. Fig. 6 is a flowchart illustrating the joining process according to the embodiment. Each process shown in Fig. 6 is executed based on the control of the control device 70.

[0079] The control device 70 performs a first loading process (S100). The control device 70 causes the transfer device 61 to load the first substrate W1, which has been surface modified by the surface modification device 30 and hydrophilized by the surface hydrophilization device 40, into the bonding device 41. The control device 70 then turns the first substrate W1 over so that the non-bonding surface W1n of the first substrate W1 faces upward, and then causes the first chuck unit 103 to suction-hold the non-bonding surface W1n of the first substrate W1.

[0080] The control device 70 performs a second carry-in process (S101). The order of the first and second transfer processes may be reversed. The control device 70 causes the transfer device 61 to carry the second substrate W2, which has been surface modified by the surface modification device 30 and hydrophilized by the surface hydrophilization device 40, into the bonding device 41. Then, the control device 70 causes the second chuck portion 203 to suction and hold the non-bonding surface W2n of the second substrate W2.

[0081] The control device 70 controls the second suction unit 212 (an example of a suction unit). Specifically, the control device 70 controls the vacuum pump 250 and the regulator 251 so that a suction force set for each divided region 230 is generated, thereby suction-holding the second substrate W2. The control device 70 generates different suction forces in the multiple divided regions 230 to suction-hold the second substrate W2. Note that the multiple divided regions 230 may include divided regions 230 that generate the same suction force.

[0082] For example, as shown in Fig. 7, the control device 70 divides the plurality of divided regions 230 into "A" to "G" and generates an attractive force. Fig. 7 is a diagram showing an example of dividing the attractive force in the divided regions 230 according to the embodiment. The divided regions 230 with the same reference numerals in Fig. 7 generate the same attractive force.

[0083] In addition, the control device 70 may control the vacuum pump 250 and the regulator 251 so that after the second substrate W2 is adsorbed and held in each divided area 230 with the same adsorption force, an adsorption force set for each divided area 230 is generated.

[0084] The control device 70 performs a bonding process (S102). Specifically, the control device 70 adjusts the horizontal positions of the first substrate W1 and the second substrate W2, and then adjusts the vertical positions of the first substrate W1 and the second substrate W2.

[0085] Next, the control device 70 causes the first deformation portion 113 to press downward the central portion of the first substrate W1 that is sucked and held by the first holding portion 111, thereby bending the first substrate W1 downward.

[0086] Furthermore, the control device 70 supplies air to the pressure variable space 243 using the electropneumatic regulator 261, thereby pressurizing the pressure variable space 243. As a result, the second substrate W2, which is held by suction on the second holding portion 211, is curved upward. Note that the second substrate W2 is held by suction on the second holding portion 211 by suction forces generated in each divided region 230.

[0087] As a result, the central portion of the first substrate W1 and the central portion of the second substrate W2 come into contact with each other, and bonding of the central portions of the first substrate W1 and the second substrate W2 begins, as shown in Fig. 8. Fig. 8 is a schematic diagram showing a state in which bonding of the first substrate W1 and the second substrate W2 has begun in the bonding apparatus 41 according to the embodiment.

[0088] The first substrate W1 and the second substrate W2 have undergone surface modification treatment. This generates van der Waals forces (intermolecular forces) that bond the bonding surfaces W1j and W2j of the substrates W1 and W2. Furthermore, the first substrate W1 and the second substrate W2 have undergone hydrophilization treatment. This causes hydrophilic groups on the bonding surfaces W1j and W2j of the substrates W1 and W2 to form hydrogen bonds, firmly bonding the bonding surfaces W1j and W2j of the substrates W1 and W2.

[0089] Next, the control device 70 stops suction by the first suction unit 112. This releases the suction and holding of the first substrate W1 by the first holding unit 111, and the first substrate W1 falls onto the second substrate W2 from the center to the outer periphery, and the first substrate W1 and the second substrate W2 are bonded together to form the laminated substrate T.

[0090] In this way, the control device 70 generates different suction forces in the multiple divided regions 230 to bond the first substrate W1 and the second substrate W2 together.

[0091] The control device 70 performs the unloading process (S103). The control device 70 causes the transfer device 61 to unload the laminated substrate T from the bonding device 41.

[0092] <Effects> The bonding device 41 includes a first holding unit 111, a first deformation unit 113, a second holding unit 211, a second deformation unit 213, a second suction unit 212 (an example of a suction unit), and a control device 70. The first holding unit 111 sucks and holds the first substrate W1 from above. The first deformation unit 113 causes a central portion of the first substrate W1 held by the first holding unit 111 to protrude downward. The second holding unit 211 is provided below the first holding unit 111 and sucks and holds the second substrate W2 to be bonded to the first substrate W1 from below. The second deformation unit 213 causes a central portion of the second substrate W2 sucked and held by the second holding unit 211 to protrude upward. The second suction unit 212 generates different suction forces in multiple divided regions 230 included in the suction region of the second substrate W2. The control device 70 controls the second suction unit 212.

[0093] This allows the bonding device 41 to suction-hold the second substrate W2 by using different suction forces generated in the multiple divided regions 230. Therefore, the bonding device 41 can suppress the occurrence of distortion in the second substrate W2 suction-held by the second holding portion 211, suppress the occurrence of distortion in the overlapped substrate T, and improve the bonding accuracy of the overlapped substrate T.

[0094] The second holding portion 211 also includes first ribs 211a (an example of a wall portion) that divide the suction area into a plurality of divided areas 230.

[0095] This allows the bonding device 41 to accurately adjust the suction forces generated in the plurality of divided regions 230, suppress the occurrence of distortion in the second substrate W2, and improve the bonding accuracy of the overlapped substrate T.

[0096] The first ribs 211a also divide the suction region into a plurality of divided regions 230 along the radial direction of the second substrate W2.

[0097] This allows the bonding device 41 to generate different suction forces in the radial direction of the second substrate W2, thereby suppressing distortion of the second substrate W2 in the radial direction, thereby improving the bonding accuracy of the overlapped substrates T.

[0098] The first ribs 211a also divide the suction region into a plurality of divided regions 230 along the circumferential direction of the second substrate W2.

[0099] This allows the bonding device 41 to generate different suction forces in the circumferential direction of the second substrate W2, thereby suppressing distortion in the circumferential direction of the second substrate W2, thereby improving the bonding accuracy of the laminated substrates T.

[0100] Furthermore, the second holding portion 211 has a plurality of suction holes 211c formed therein corresponding to the plurality of divided regions 230. The second suction portion 212 sucks the second substrate W2 through the plurality of suction holes 211c.

[0101] This allows the bonding device 41 to adjust the suction force for each divided region 230, and to prevent distortion from occurring in the second substrate W2 that is sucked and held by the second holding part 211. Therefore, the bonding device 41 can prevent distortion from occurring in the overlapped substrate T, and improve the bonding accuracy of the overlapped substrate T.

[0102] The bonding device 41 also includes a base portion 210 (an example of a base portion) and a seal member 220. The base portion 210 forms a pressure variable space 243 (an example of a deformation space) between the base portion 210 and the second holding portion 211, and the pressure variable space 243 causes the second holding portion 211 to protrude upward when pressurized, and the seal member 220 is attached to the base portion 210. The seal member 220 is attached to the base portion 210, seals the pressure variable space 243 and the suction hole 211c, and is expandable and contractible. The seal member 220 abuts against the lower surface of the second holding portion 211.

[0103] This allows the bonding device 41 to prevent unevenness from being formed on the lower surface of the second holding part 211. Therefore, when the pressure variable space 243 is pressurized to cause the second holding part 211 to protrude upward, the bonding device 41 can prevent distortion of the upper surface of the second holding part 211, i.e., distortion of the second substrate W2. Therefore, the bonding device 41 can prevent distortion from occurring in the overlapped substrate T and improve the bonding accuracy of the overlapped substrate T.

[0104] <Modification> The control device 70 of the bonding device 41 according to the modified example may change the suction force of the multiple divided regions 230 during the bonding process of the first substrate W1 and the second substrate W2. For example, the bonding device 41 according to the modified example may change the suction force of the multiple divided regions 230 at a preset timing during the bonding process. The bonding device 41 according to the modified example may change the suction force in some of the multiple divided regions 230. Furthermore, the bonding device 41 according to the modified example may change the suction force of the multiple divided regions 230 multiple times during the bonding process. Note that changing the suction force includes setting the suction force to zero, i.e., releasing suction of the second substrate W2 in the divided region 230.

[0105] As a result, the bonding apparatus 41 according to the modified example can suppress the occurrence of distortion in the second substrate W2 during the bonding process, and can improve the bonding accuracy of the overlapped substrate T.

[0106] Furthermore, the bonding device 41 according to the modified example may change the suction force of the divided regions 230 during the bonding process of the first substrate W1 and the second substrate W2 based on the state of the second substrate W2 during the bonding process, for example, the temperature of the second substrate W2. The temperature of the second substrate W2 is detected by, for example, a temperature sensor provided in the second holding part 211.

[0107] As a result, the bonding apparatus 41 according to the modified example can suppress the occurrence of distortion in the second substrate W2 during the bonding process, and can improve the bonding accuracy of the overlapped substrate T.

[0108] Furthermore, the control device 70 of the bonding device 41 according to the modified example may set the suction forces of the multiple divided regions 230 based on the state of the second substrate W2 before bonding. The state of the second substrate W2 includes the thickness of the second substrate W2, the amount of warping of the second substrate W2, and the temperature of the second substrate W2. As shown in FIG. 9, the bonding system 1 according to the modified example includes a detection device 43 on which the second substrate W2 is temporarily placed and which detects the state of the second substrate W2. FIG. 9 is a schematic diagram showing the configuration of the bonding system 1 according to the modified example of the embodiment.

[0109] Furthermore, the bonding device 41 according to the modified example may change the suction forces of the multiple divided regions 230 during the bonding process of the first substrate W1 and the second substrate W2, based on the state of the second substrate W2 before bonding.

[0110] As a result, the bonding device 41 according to the modified example can set the suction force in the divided area 230 according to the state of the second substrate W2, thereby suppressing distortion of the second substrate W2 during the bonding process and improving the bonding accuracy of the laminated substrate T.

[0111] In addition, the bonding device 41 according to the modified example may, like the second chuck portion 203, form a pressure variable space between the first holding portion 111 and the support portion 110 in the first chuck portion 103, and curve the first substrate W1 downward by pressurizing the pressure variable space.

[0112] In addition, the bonding device 41 according to the modified example may be provided with ribs that divide the suction area of ​​the first chuck portion 103 into a plurality of divided areas 230, similar to the second chuck portion 203, and different suction forces may be generated in the plurality of divided areas 230.

[0113] As a result, the bonding apparatus 41 according to the modified example can suppress the occurrence of distortion in the first substrate W1 and improve the bonding accuracy of the overlapped substrate T.

[0114] Furthermore, the bonding device 41 according to the modified example may perform the bonding process by appropriately combining the bonding devices 41 according to the modified examples described above. For example, the bonding device 41 according to the modified example may change the suction force of the multiple divided regions 230 in the first chuck portion 103 during the bonding process of the first substrate W1 and the second substrate W2.

[0115] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0116] 1. Joint System 2 Loading / unloading station 3 Processing Stations 41 Joining equipment 70 Control device 103 First chuck part 110 Support part 111 1st holding part 112 1st suction section 113 First transformation section 203 Second chuck part 210 Base part (base part) 211 Second holding part 211a First rib (wall) 211c Suction hole 212 2nd suction section 213 Second deformation section 220 Sealing material 230 Split area W1 First board W2 Second board

Claims

1. a first holding unit that suction-holds the first substrate from above; a first deformation portion that causes a central portion of the first substrate held by the first holding portion to protrude downward; a second holding portion provided below the first holding portion and configured to suction-hold from below a second substrate to be bonded to the first substrate; a second deformation portion that causes a central portion of the second substrate held by the second holding portion to protrude upward; a suction unit that generates different suction forces in a plurality of divided regions included in the suction region of the second substrate; a base portion to which the second holding portion is attached, the base portion forming a deformation space between the second holding portion and the base portion, the deformation space causing the second holding portion to protrude upward when pressurized; a seal member attached to the base portion; a control device that controls the suction unit; Equipped with a plurality of suction holes corresponding to the plurality of divided regions are formed in the second holding portion; the suction unit sucks the second substrate through the plurality of suction holes, the sealing member seals the deformation space and the suction hole; the second deformation portion causes the second holding portion, which has attracted and held the second substrate, to protrude upward together with the second substrate; The control device generating different suction forces in the plurality of divided regions to suction-hold the second substrate by the second holding unit; After adjusting the horizontal positions of the first substrate and the second substrate, adjusting the vertical positions of the first substrate and the second substrate; a central portion of the first substrate held by suction by the first holding portion is pressed downward by the first deforming portion, thereby bending the first substrate downward; bending the second substrate held by suction by the second holding portion upward; a bonding device that brings the central portion of the first substrate and the central portion of the second substrate into contact with each other to initiate bonding between the central portion of the first substrate and the central portion of the second substrate.

2. The second holding portion is a wall portion that divides the suction area into the plurality of divided areas; The joining device according to claim 1 , comprising:

3. The wall portion divides the suction region into the plurality of divided regions along a radial direction of the second substrate. The joining device according to claim 2 .

4. the wall portion divides the suction region into the plurality of divided regions along a circumferential direction of the second substrate. The joining device according to claim 2 or 3.

5. 5. The joining device according to claim 1, wherein the second holding portion has a thickness at a central portion greater than a thickness at an outer peripheral portion.

6. a measuring unit for measuring the protrusion amount of the second holding unit; The joining device according to any one of claims 1 to 5, comprising:

7. The control device changes the suction forces of the plurality of divided regions during the bonding process of the first substrate and the second substrate. The joining device according to any one of claims 1 to 6.

8. The control device sets the suction forces of the plurality of divided regions based on the state of the second substrate before bonding. The joining device according to any one of claims 1 to 7.

9. a processing station having a bonding device according to any one of claims 1 to 8; a transfer station for transferring the first substrate and the second substrate to the processing station and transferring a laminated substrate formed by bonding the first substrate and the second substrate from the processing station; A joining system comprising:

10. a first holding step of suction-holding the first substrate from above with a first holding unit; a first deformation step of pressing downward a central portion of the first substrate held by suction by the first holding portion, thereby causing the first substrate to protrude downward; a second holding step of suction-holding a second substrate from below by a second holding part provided below the first holding part; a second deformation step of causing a central portion of the second substrate held by suction by the second holding portion to protrude upward; a bonding step of bonding the first substrate and the second substrate by bringing a central portion of the first substrate protruding downward into contact with a central portion of the second substrate protruding upward to start bonding the central portion of the first substrate and the central portion of the second substrate; Including, the first deformation step and the second deformation step are performed after the horizontal positions of the first substrate and the second substrate have been adjusted and the vertical positions of the first substrate and the second substrate have been adjusted; the second holding step generates different suction forces in a plurality of divided regions included in the suction region of the second substrate to suction-hold the second substrate; a deformation space is formed between the second holding portion and a base portion to which the second holding portion is attached, the deformation space causing the second holding portion to protrude upward when pressurized; a plurality of suction holes corresponding to the plurality of divided regions are formed in the second holding portion; the second substrate is sucked through the plurality of suction holes; A seal member is attached to the base portion, The sealing member seals the deformation space and the suction hole.

11. A storage medium storing a program for causing a computer to execute the joining method according to claim 10.

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