Processing device and processing method

Abstract

To provide a technique for keeping a cleaning part clean.SOLUTION: A processing device includes a processing unit that processes a substrate, a cleaning unit that cleans the substrate, and a standby unit that temporarily causes the substrate wetted with a liquid supplied by the processing unit after being processed by the processing unit to stand by in the middle of a transport path of the substrate from the processing unit to the cleaning unit. The cleaning unit includes a substrate holding unit that holds the substrate. The standby unit includes a liquid removing unit that removes the liquid from a region of the substrate that contacts the substrate holding unit.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a processing apparatus and a processing method. [Background technology]

[0002] The substrate grinding system described in Patent Document 1 includes a grinding device that grinds substrates, a first cleaning device that cleans the substrates after they have been ground by the grinding device, and a second transport device that transports the substrates from the grinding device to the first cleaning device. The grinding device grinds the top surfaces of the substrates. The first cleaning device scrubs and washes the ground top surfaces of the substrates W. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Registered Utility Model No. 3227448 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for keeping a cleaning section clean. [Means for solving the problem]

[0005] A processing apparatus according to one aspect of the present disclosure includes a processing unit that processes a substrate, a cleaning unit that cleans the substrate, and a waiting unit that temporarily waits the substrate, wet with a liquid supplied by the processing unit after processing in the processing unit, along a transport path of the substrate from the processing unit to the cleaning unit. contacting the center of the lower surface of the substrate The waiting section has a substrate holding section for holding the substrate. a plurality of support pins that support the outer periphery of the substrate; a liquid removal section that removes the liquid from a region of the substrate that is in contact with the substrate holder; and, With The liquid removal unit has a gas ejection unit that ejects a gas toward the region of the substrate. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, the cleaning section can be kept clean. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a processing device according to one embodiment. [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is a flowchart showing a processing method according to an embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing an example of the cleaning unit, and is a cross-sectional view showing an example of a state in which a substrate is held by a substrate holder. [Figure 5] FIG. 5 is a cross-sectional view showing an example of the cleaning unit, showing an example of a state in which a substrate is held by a pair of suction pads. [Figure 6] FIG. 6 is a cross-sectional view showing an example of a nozzle and a blow mechanism of the processing unit. [Figure 7] FIG. 7 is a cross-sectional view showing an example of the waiting section. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0009] First, a processing apparatus 1 according to one embodiment will be described with reference to Figures 1 and 2. The processing apparatus 1 processes a substrate W and cleans the processed substrate W. The processing apparatus 1 includes, for example, a load / unload block 2, a cleaning block 3, and a processing block 5. The load / unload block 2, the cleaning block 3, and the processing block 5 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.

[0010] The carry-in / out block 2 includes a mounting section 21 on which a cassette C is placed. The cassette C accommodates a plurality of substrates W. The substrates W include semiconductor substrates such as silicon wafers or compound semiconductor wafers. The substrates W may further include a device layer formed on the surface of the semiconductor substrate. The device layer includes, for example, an electronic circuit. The substrates W may include a glass substrate instead of a semiconductor substrate.

[0011] The cleaning block 3 includes, for example, cleaning units 31A and 31B that clean the substrate W after processing, etching units 32A and 32B that etch the substrate W after cleaning, an inversion unit 34 that inverts the substrate W, and a transition unit 35 that relays the substrate W. The cleaning block 3 also includes a second transport unit 36 ​​and a third transport unit 37.

[0012] When viewed from above, the second transport unit 36 ​​and the third transport unit 37 are provided on a diagonal line of the rectangular cleaning block 3. The second transport unit 36 ​​is adjacent to the processing block 5, but is not adjacent to the carry-in / out block 2. In contrast, the third transport unit 37 is adjacent to the carry-in / out block 2, but is not adjacent to the processing block 5.

[0013] The second transport section 36 transports the substrate W between a plurality of devices adjacent to the second transport section 36. The second transport section 36 has a transport arm that holds the substrate W. The transport arm is capable of moving in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotating about a vertical axis.

[0014] The third transport unit 37 transports the substrate W between a plurality of devices adjacent to the third transport unit 37. The third transport unit 37 has a transport arm that holds the substrate W. The transport arm is capable of moving in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotating about a vertical axis.

[0015] The processing block 5 includes a processing unit 50 that processes the substrate W. The processing unit 50, for example, grinds the substrate W. Grinding includes polishing. The processing unit 50 includes, for example, four holders 52A, 52B, 52C, and 52D that hold the substrate W, and two tool drivers 53A and 53B that drive a tool D that is pressed against the substrate W. The tool drivers 53A and 53B rotate and raise and lower the tool D.

[0016] The processing unit 50 may further include a turntable 51 that is rotated about a rotation center line R1. The four holders 52A to 52D are rotated together with the turntable 51. The four holders 52A to 52D are provided at intervals around the rotation center line R1 of the turntable 51 and are simultaneously rotated about the rotation center line R1. The four holders 52A to 52D are independently rotated about their respective rotation center lines R2.

[0017] The two holders 52A, 52C are arranged symmetrically about the rotation center line R1 of the turntable 51. Each of the holders 52A, 52C moves between a first load / unload position A3, where the first transport unit 54 loads and unloads the substrate W, and a first processing position A1, where the substrate W is processed by one tool driving unit 53A. The two holders 52A, 52C move between the first load / unload position A3 and the first processing position A1 every time the turntable 51 rotates 180°.

[0018] The other two holders 52B, 52D are arranged symmetrically about the rotation center line R1 of the turntable 51. Each of the holders 52B, 52D moves between a second load / unload position A0, where the first transport unit 54 loads and unloads the substrate W, and a second processing position A2, where the substrate W is processed by another tool driving unit 53B. The other two holders 52B, 52D move between the second load / unload position A0 and the second processing position A2 every time the turntable 51 rotates 180°.

[0019] When viewed from above, the first loading / unloading position A3, the second loading / unloading position A0, the first processing position A1, and the second processing position A2 are arranged in this order in a counterclockwise direction. In this case, when viewed from above, the holding portions 52A, 52B, 52C, and 52D are arranged in this order at 90° intervals in a counterclockwise direction.

[0020] The positions of the first loading / unloading position A3 and the second loading / unloading position A0 may be reversed, and the positions of the first processing position A1 and the second processing position A2 may also be reversed. That is, when viewed from above, the first loading / unloading position A3, the second loading / unloading position A0, the first processing position A1, and the second processing position A2 may be arranged in this order clockwise. In this case, when viewed from above, the holding units 52A, 52B, 52C, and 52D are arranged in this order at 90° intervals clockwise.

[0021] However, the number of holding units is not limited to four, and the number of tool driving units is not limited to two. Also, the rotary table 51 may be omitted. Instead of the rotary table 51, a slide table may be provided.

[0022] The processing block 5 is equipped with a first transport unit 54 that transports the substrate W inside the processing block 5. The first transport unit 54 includes a suction pad that holds the substrate W. The suction pad is capable of movement in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotation about a vertical axis.

[0023] The processing block 5 includes waiting sections 57A, 57B, and 57C (see FIG. 2) for temporarily waiting the substrate W. The waiting sections 57A, 57B, and 57C relay the substrate W between the first transport section 54 and the second transport section 36. The waiting sections 57A and 57B relay the substrate W from the second transport section 36 to the first transport section 54. The waiting section 57C relays the substrate W from the first transport section 54 to the second transport section 36.

[0024] The waiting sections 57A and 57B also serve as alignment sections that adjust the center position of the substrate W. The alignment sections align the center position of the substrate W to a desired position using a guide or the like. This allows the rotation center line R2 of each of the holders 52A to 52D to coincide with the center of the substrate W when the first transport section 54 transfers the substrate W to each of the holders 52A to 52D.

[0025] The alignment unit may detect the center position of the substrate W using an optical system or the like. The alignment unit may also detect the crystal orientation of the substrate W using an optical system or the like, and more specifically, may detect a notch representing the crystal orientation of the substrate W. In a rotating coordinate system that rotates together with each of the holders 52A to 52D, the crystal orientation of the substrate W can be aligned to a desired orientation.

[0026] The processing block 5 may include an inversion unit 58 (see FIG. 2) that inverts the substrate W. The inversion unit 58, the standby unit 57C, the standby unit 57B, and the standby unit 57A are stacked from top to bottom in this order. Note that the stacking order is not particularly limited.

[0027] The reversing unit 58 also serves as a waiting unit where the substrate W temporarily waits on the transport path of the substrate W from the processing unit 50 to the cleaning unit 31A. The reversing unit 58 relays the substrate W from the first transport unit 54 to the second transport unit 36. Note that although the reversing unit 58 also serves as a waiting unit, the reversing unit 58 and the waiting unit may be provided separately.

[0028] The processing device 1 further includes a control unit 9. The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed in the processing device 1. The control unit 9 controls the operation of the processing device 1 by having the CPU 91 execute the programs stored in the storage medium 92.

[0029] Next, a processing method according to one embodiment will be described with reference to Fig. 3. The processing method includes, for example, steps S101 to S110 shown in Fig. 3. Steps S101 to S110 are performed under the control of the control unit 9. Note that the processing method does not have to include all of the steps shown in Fig. 3, and may include steps not shown in Fig. 3.

[0030] First, the third transport unit 37 takes out the substrate W from the cassette C and transports it to the transition unit 35. Then, the second transport unit 36 ​​takes out the substrate W from the transition unit 35 and transports it to the standby unit 57A. The substrate W has a first main surface and a second main surface facing oppositely, and is transported with the first main surface facing upward.

[0031] Next, the standby section 57A adjusts the center position of the substrate W (step S101). Thereafter, the first transport section 54 takes the substrate W from the standby section 57A and transports it to a holder (e.g., holder 52C) located at the first load / unload position A3. The substrate W is placed on the holder 52C with its first main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52C. Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the first load / unload position A3 to the first processing position A1.

[0032] Next, the tool driving unit 53A drives the tool D to grind the first main surface of the substrate W (step S102). Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the first processing position A1 to the first carry-in / out position A3. Subsequently, the first transport unit 54 removes the substrate W from the holder 52C located at the first carry-in / out position A3 and transports it to the inverting unit 58.

[0033] Next, the inverting unit 58 inverts the substrate W (step S103). The substrate W is inverted upside down so that the first main surface faces downward and the second main surface faces upward. Thereafter, the second transport unit 36 ​​takes out the substrate W from the inverting unit 58 and transports it to the cleaning unit 31A.

[0034] Next, the cleaning unit 31A cleans the first main surface of the substrate W (step S104). Particles such as processing debris can be removed by the cleaning unit 31A. The cleaning unit 31A, for example, scrubs the substrate W. The cleaning unit 31A may clean not only the first main surface of the substrate W but also the second main surface. After the substrate W is dried, the second transport unit 36 ​​removes the substrate W from the cleaning unit 31A and transports it to the standby unit 57B.

[0035] Next, the standby section 57B adjusts the center position of the substrate W (step S105). Thereafter, the first transport section 54 takes the substrate W from the standby section 57B and transports it to a holder (e.g., holder 52D) located at the second load / unload position A0. The substrate W is placed on the holder 52D with its second main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52D. Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the second load / unload position A0 to the second processing position A2.

[0036] Next, the tool driving unit 53B drives the tool D to grind the second main surface of the substrate W (step S106). Thereafter, the turntable 51 is rotated 180°, and the holder 52D is moved from the second processing position A2 to the second carry-in / out position A0. Next, the first transport unit 54 removes the substrate W from the holder 52D located at the second carry-in / out position A0 and transports it to the standby unit 57C. Thereafter, the second transport unit 36 ​​removes the substrate W from the standby unit 57C and transports it to the cleaning unit 31B.

[0037] Next, the cleaning unit 31B cleans the second main surface of the substrate W (step S107). Particles such as processing debris can be removed by the cleaning unit 31B. The cleaning unit 31B, for example, scrubs the substrate W. The cleaning unit 31B may clean not only the second main surface of the substrate W but also the first main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the cleaning unit 31B and transports it to the etching unit 32B.

[0038] Next, the etching unit 32B etches the second main surface of the substrate W (step S108). The etching unit 32B can remove processing marks on the second main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32B and transports it to the reversing unit 34.

[0039] Next, the inverting unit 34 inverts the substrate W (step S109). The substrate W is inverted upside down so that the first main surface faces upward and the second main surface faces downward. Thereafter, the third transport unit 37 removes the substrate W from the inverting unit 34 and transports it to the etching unit 32A.

[0040] Next, the etching unit 32A etches the first main surface of the substrate W (step S110). Processing marks on the first main surface can be removed by the etching unit 32A. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32A and stores it in the cassette C. Thereafter, the current process ends.

[0041] 3, the processing method has been described with a focus on one substrate W. The processing apparatus 1 may simultaneously perform multiple processes at multiple positions to improve throughput. For example, the processing apparatus 1 simultaneously processes the substrate W at each of the first processing position A1 and the second processing position A2. Meanwhile, the processing apparatus 1 performs, for example, spray cleaning of the substrate W, measurement of the thickness distribution of the substrate W, unloading the substrate W, cleaning of the substrate suction surface (upper surface) of the holder, and loading of the substrate W, in this order, at each of the first load / unload position A3 and the second load / unload position A0.

[0042] Thereafter, the processing apparatus 1 rotates the turntable 51 by 180°. Subsequently, the processing apparatus 1 simultaneously processes the substrate W again at each of the first processing position A1 and the second processing position A2. Meanwhile, the processing apparatus 1 again performs spray cleaning of the substrate W, measurement of the thickness distribution of the substrate W, unloading the substrate W, cleaning the substrate suction surface (upper surface) of the holder, and loading the substrate W, in this order, at each of the first load / unload position A3 and the second load / unload position A0.

[0043] It should be noted that although the processing unit 50 in this embodiment is a grinding unit that grinds the substrate W, the technology of the present disclosure is not limited to this. The processing unit 50 may also be a cutting unit that cuts the substrate W protected by a protective member, a cutting unit that cuts the substrate W, or the like. When the processing unit 50 is a grinding unit, a grindstone or the like is used as the tool D. When the processing unit 50 is a cutting unit, a blade or the like is used as the tool D. When the processing unit 50 is a cutting unit, an end mill or the like is used as the tool D.

[0044] 4 and 5, an example of the cleaning unit 31B will be described. Note that the cleaning unit 31A has the same configuration as the cleaning unit 31B, and therefore a description thereof will be omitted. The cleaning unit 31B includes, for example, a substrate holding unit 311 that holds the substrate W, a rotation mechanism 312 that rotates the substrate holding unit 311, a ring cover 314 that surrounds the periphery of the substrate W, a friction unit 315 that comes into contact with the substrate W, a movement unit 316 that moves the friction unit 315, a lower nozzle 317 that supplies a cleaning liquid to the lower surface of the substrate W, and an upper nozzle 318 that supplies a cleaning liquid to the upper surface of the substrate W.

[0045] The substrate holder 311 holds the substrate W horizontally, for example, from below. The substrate holder 311 adsorbs a first region of the substrate W. The first region is, for example, the center of the lower surface of the substrate W. The rotation mechanism 312 rotates the substrate holder 311 to rotate the substrate W.

[0046] The ring cover 314 prevents the scattering of cleaning liquid that is shaken off from the rotating substrate W. A pair of suction pads 313 (only one is shown in FIGS. 4 and 5) are provided inside the ring cover 314, sandwiching the substrate holder 311 in the Y-axis direction. The pair of suction pads 313 and the ring cover 314 are integrated and, for example, can move simultaneously in the X-axis and Z-axis directions but cannot move in the Y-axis direction.

[0047] The friction unit 315 comes into contact with, for example, the lower surface of the substrate W and rubs the lower surface of the substrate W. The friction unit 315 is a brush or a sponge. The friction unit 315 is moved in the Y-axis direction by a moving unit 316 while being rotated by a motor 319.

[0048] 4, when the substrate holder 311 is holding the first region of the underside of the substrate W by suction, the rotation mechanism 312 rotates the substrate W, and the movement unit 316 moves the friction unit 315 in the Y-axis direction. This scrubs and cleans the region of the underside of the substrate W that is outside the first region.

[0049] 5, when the pair of suction pads 313 suction-adsorb the underside of the substrate W, the pair of suction pads 313 and the ring cover 314 are moved in the X-axis direction by a driving unit (not shown), and the friction unit 315 is moved in the Y-axis direction by a moving unit 316. In this way, the first region of the underside of the substrate W is scrubbed.

[0050] 4 and 5, the substrate holder 311 and the pair of suction pads 313 hold the substrate W in order, allowing the friction unit 315 to scrub the entire lower surface of the substrate W. In this embodiment, the friction unit 315 is disposed below the substrate W, but it may also be disposed above the substrate W, and the upper surface of the substrate W may be scrubbed. The friction unit 315 may also be disposed on both the top and bottom sides of the substrate W.

[0051] Next, an example of the nozzle 61 and blow mechanism 62 of the processing unit 50 will be described with reference to Fig. 6. The processing unit 50 has a nozzle 61 and a blow mechanism 62. The nozzle 61 supplies a cleaning liquid to the upper surface of the processed substrate W at the first load / unload position A3 and the second load / unload position A0 before the substrate W is unloaded, thereby removing processing debris (e.g., grinding debris) adhering to the upper surface of the substrate W. The cleaning liquid is, for example, water.

[0052] The blow mechanism 62 ejects fluid from the suction surfaces of the holders 52A to 52D that adsorb the substrate W when the substrate W is being unloaded from the first load / unload position A3 and the second load / unload position A0. The ejection pressure of the fluid can separate the substrate W from the suction surfaces. The ejection of fluid is controlled independently for each of the holders 52A to 52D.

[0053] Each of the holders 52A to 52D includes, for example, a porous body 521 that vacuum-sucks the substrate W, a holder 522 that holds the porous body 521, and a flange 523 provided on the lower edge of the holder 522. The flange 523 is fixed to a rotating table 63 with bolts 64 or the like. The rotating table 63 is rotated about a rotation center line R2.

[0054] The blow mechanism 62 supplies a fluid to the porous body 521, and ejects the fluid from the suction surface of the porous body 521 that suctions the substrate W. A liquid such as water is used as the fluid. Note that a gas such as air may also be used as the fluid.

[0055] The liquid is supplied to the substrate W not only at the first load / unload position A3 and the second load / unload position A0 but also at the first processing position A1 and the second processing position A2. For example, the nozzle 65 (see FIG. 2) supplies a liquid such as water to the upper surface of the substrate W at the first processing position A1 and the second processing position A2 when the substrate W is processed.

[0056] The substrate W is transported from the processing unit 50 to the cleaning units 31A and 31B while wet with the liquid supplied by the processing unit 50. The reason why the substrate W is transported while wet with the liquid is that if the substrate W dries before cleaning, processing debris will adhere firmly to the substrate W, making it difficult to remove the processing debris by cleaning.

[0057] The substrates W are transported into the cleaning units 31A and 31B wet with the liquid supplied by the processing unit 50, and so bring liquid contaminated with processing debris into the cleaning units 31A and 31B. The liquid contaminated with processing debris adheres to the substrate holders 311 of the cleaning units 31A and 31B, contaminating the substrate holders 311. This then adversely affects the substrates W held by the substrate holders 311.

[0058] 7, the standby section 57C has a liquid removal section 70 that removes liquid from the first region of the substrate W. As described above, the standby section 57C temporarily waits the substrate W wet with the liquid supplied by the processing section 50 along the transport path of the substrate W from the processing section 50 to the cleaning section 31B.

[0059] The standby section 57C has, for example, a plurality of support pins 571 that support the outer periphery of the substrate W, and a horizontal plate 572 on which the support pins 571 stand. The plurality of support pins 571 horizontally support the substrate W. A gap is formed between the substrate W and the horizontal plate 572, and at least a part of the liquid removal section 70 is disposed in this gap.

[0060] The liquid removal unit 70 dries a first region of the substrate W. The first region of the substrate W is the region that comes into contact with the substrate holding unit 311 of the cleaning unit 31B. Drying the first region of the substrate W prevents liquid contaminated with processing debris from adhering to the substrate holding unit 311 of the cleaning unit 31B, thereby preventing the substrate holding unit 311 from becoming contaminated. This allows the cleaning unit 31B to be kept clean.

[0061] The first region of the substrate W is, for example, the center of the underside of the substrate W. The center of the underside of the substrate W is an area where processing debris hardly accumulates, compared to not only the upper surface of the substrate W but also the outer periphery of the lower surface of the substrate W, so there is no problem with drying the center of the underside of the substrate W before cleaning. Note that the upper surface of the substrate W is processed, so processing debris is likely to accumulate, and processing debris that has wrapped around from the upper surface of the substrate W can accumulate on the outer periphery of the lower surface of the substrate W.

[0062] The liquid removal unit 70 only needs to remove the liquid from a portion of the substrate W, and does not need to remove the liquid from the entire substrate W. For example, the liquid removal unit 70 only needs to remove the liquid from the center of the underside of the substrate W, and does not need to remove the liquid from the periphery of the underside of the substrate W. This makes it possible to prevent processing debris from firmly adhering to the substrate W before cleaning, and allows the processing debris to be easily removed by cleaning.

[0063] The liquid removal unit 70 has, for example, a gas discharge unit 71 that discharges gas toward a first region of the substrate W. By adjusting the gas discharge direction, the gas discharge flow rate, and the like, it is possible to adjust the region of the substrate W that the gas hits, and therefore the region on the substrate W from which liquid is removed. The gas discharge unit 71 includes a nozzle 711 that discharges gas.

[0064] The nozzle 711 is, for example, vertically erected and ejects gas directly upward. The ejected gas is, for example, air. The ejected gas may be any dry gas, and may be an inert gas such as nitrogen gas. In this embodiment, there is one nozzle 711, but there may be more than one.

[0065] After hitting the center of the underside of the substrate W, the gas discharged from the nozzle 711 flows radially along the underside of the substrate W, gradually decelerating and gradually reaching atmospheric pressure. As a result, the Bernoulli effect comes into play in the gap between the nozzle 711 and the substrate W, generating negative pressure at the center of the underside of the substrate W, and the substrate W is sucked in by the negative pressure. Therefore, the substrate W is stably supported.

[0066] The gas discharge unit 71 may discharge a cleaning liquid such as water before discharging the gas. The cleaning liquid and the gas are discharged from the same nozzle 711. The first region of the substrate W can be cleaned with the cleaning liquid before being dried with the gas. This further prevents processing debris from adhering to the substrate holder 311 of the cleaning unit 31B.

[0067] The liquid removal unit 70 has a supply line 73 that supplies gas and cleaning liquid to the nozzle 711. The supply line 73 has a common line 731 and multiple branch lines 732 and 733. The common line 731 connects the nozzle 711 to the multiple branch lines 732 and 733. Note that the supply line 73 may supply only gas to the nozzle 711.

[0068] The branch line 732 connects the common line 731 and the gas supply source 74. An open / close valve 75 is provided midway along the branch line 732. When the open / close valve 75 opens the flow path of the branch line 732, the nozzle 711 discharges gas. When the open / close valve 75 closes the flow path of the branch line 732, the nozzle 711 stops discharging gas.

[0069] The branch line 733 connects the common line 731 and the cleaning liquid supply source 76. An open / close valve 77 is provided midway along the branch line 733. When the open / close valve 77 opens the flow path of the branch line 733, the nozzle 711 ejects the cleaning liquid. When the open / close valve 77 closes the flow path of the branch line 733, the nozzle 711 stops ejecting the cleaning liquid.

[0070] The liquid removal unit 70 may have an air volume amplifier 72 that uses the Coanda effect to draw gas around the gas discharge unit 71 into the flow of gas discharged by the gas discharge unit 71, thereby amplifying the volume of air blowing onto the substrate W. By using the air volume amplifier 72, a wide area of ​​the substrate W can be dried with a small gas discharge flow rate. Furthermore, floating of the substrate W due to the discharge of gas can be suppressed.

[0071] The air volume amplification section 72 has, for example, an annular portion 721 that surrounds the entire periphery of the gas discharge section 71. The annular portion 721 can take in gas from the entire periphery of the gas discharge section 71. The annular portion 721 preferably has a circular ring shape. It can take in gas evenly from the entire periphery centered on the gas discharge section 71. The annular portion 721 may also have a rectangular ring shape.

[0072] The gas discharge part 71 may protrude further toward the substrate W than the air volume amplifier 72, and may, for example, protrude upward than the air volume amplifier 72. Specifically, the nozzle 711 of the gas discharge part 71 may protrude further toward the substrate W than the annular part 721 of the air volume amplifier 72, and may, for example, protrude upward than the annular part 721.

[0073] Because the nozzle 711 protrudes further toward the substrate W than the annular portion 721, the gas discharged from the nozzle 711 can easily pass between the annular portion 721 and the substrate W. This increases the flow rate of the gas that spreads radially along the underside of the substrate W. A large area of ​​the substrate W can be dried with a small gas discharge flow rate. Furthermore, floating of the substrate W due to the discharge of gas can be suppressed.

[0074] The air volume amplifier 72 has an inlet 722 for taking in surrounding gas between the annular portion 721 and the horizontal plate 572. The area of ​​the inlet 722 is equal to the product of the height of the gap between the annular portion 721 and the horizontal plate 572 and the outer circumferential length of the annular portion 721, for example.

[0075] The air volume amplification section 72 has an air outlet 723, which blows gas toward the substrate W, on the surface of the annular section 721 facing the substrate W. The area of ​​the air outlet 723 is, for example, the area of ​​an opening formed on the surface of the annular section 721 facing the substrate W.

[0076] The area of ​​the intake port 722 may be larger than the area of ​​the blowout port 723. This allows a large amount of gas to be taken in from around the air volume amplifier 72, and the volume of air blowing onto the substrate W can be further amplified.

[0077] The annular portion 721 may have a tapered surface 724 at the air outlet 723 that widens toward the substrate W (e.g., upward). The gas flow can be smoothly bent along the tapered surface 724, which can prevent vortexes from occurring and prevent gas stagnation.

[0078] The annular portion 721 has an opening 725 on a surface (e.g., a lower surface) facing away from the surface facing the substrate W. The annular portion 721 may have a tapered surface (not shown) at the opening 725 that widens toward the side opposite the substrate W (e.g., downward).

[0079] In this embodiment, the liquid removal section 70 is provided in the standby section 57C where the substrate W temporarily waits along the transport path of the substrate W from the processing section 50 to the cleaning section 31B, but it may also be provided in a standby section (for example, the reversing section 58) where the substrate W temporarily waits along the transport path of the substrate W from the processing section 50 to the cleaning section 31A. As described above, the reversing section 58 and the standby section may be provided separately.

[0080] Although the embodiments of the processing apparatus and processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure. [Explanation of symbols]

[0081] 1 Processing equipment 31B Cleaning section 311 Board holding part 50 Processing Department 57C Standby section 70 Liquid removal section W substrate

Claims

1. a processing unit that processes the substrate; a cleaning unit that cleans the substrate; a waiting section that temporarily waits the substrate, wet with the liquid supplied by the processing section after processing in the processing section, along a transport path of the substrate from the processing section to the cleaning section; Equipped with the cleaning unit has a substrate holding unit that holds the substrate by contacting the center of the lower surface of the substrate, the waiting unit includes a plurality of support pins that support an outer periphery of the substrate, and a liquid removal unit that removes the liquid from a region of the substrate supported by the plurality of support pins that contacts the substrate holding unit, The liquid removal unit includes a gas discharge unit that discharges gas toward the region of the substrate.

2. a first transport unit that transports the substrate from the processing unit to the standby unit, and a second transport unit that transports the substrate from the standby unit to the cleaning unit, The processing apparatus according to claim 1 , wherein the waiting section relays the substrate between the first transport section and the second transport section.

3. The processing apparatus according to claim 1 , wherein the gas discharge unit supplies the cleaning liquid to the region of the substrate by discharging a cleaning liquid before discharging the gas toward the region of the substrate.

4. 4. The processing apparatus according to claim 1, wherein the liquid removal unit has an air volume amplification unit that amplifies the air volume impinging on the substrate by drawing gas around the gas discharge unit into the flow of gas discharged by the gas discharge unit by the Coanda effect.

5. The processing device according to claim 4 , wherein the air volume amplifying section has an annular section that surrounds the entire periphery of the gas discharge section.

6. The processing device according to claim 4 or 5, wherein the gas discharge portion protrudes further toward the substrate than the air volume amplifier portion.

7. 7. The processing device according to claim 4, wherein an inlet for taking in gas from said air volume amplifier has an area larger than an outlet for blowing out gas from said air volume amplifier.

8. 8. The processing apparatus according to claim 1, wherein the liquid removal unit removes the liquid from only a portion of the substrate.

9. A processing method comprising: processing a substrate in a processing unit; cleaning the substrate in a cleaning unit; and temporarily waiting the substrate, wet with a liquid supplied in the processing unit after processing in the processing unit, in a waiting unit midway along a transport path of the substrate from the processing unit to the cleaning unit, the cleaning unit has a substrate holding unit that holds the substrate by contacting the center of the lower surface of the substrate, the waiting unit includes a plurality of support pins that support an outer periphery of the substrate, and a liquid removal unit that removes the liquid from a region of the substrate supported by the plurality of support pins that contacts the substrate holding unit, the liquid removal unit has a gas ejection unit that ejects a gas toward the region of the substrate, The processing method includes: the gas ejection unit removes the liquid from the region of the substrate while the plurality of support pins hold the outer periphery of the substrate; transporting the substrate from which the liquid has been removed from the region from the plurality of support pins to the substrate holding unit; the substrate holding portion contacts the center of the lower surface of the substrate and holds the substrate; The processing method has the following steps.

10. 10. The processing method according to claim 9, comprising: transporting the substrate from the processing section to the waiting section by a first transport section; transporting the substrate from the waiting section to the cleaning section by a second transport section; and relaying the substrate between the first transport section and the second transport section by the waiting section.

11. The processing method according to claim 9 or 10, wherein the standby unit supplies the cleaning liquid to the region of the substrate by discharging the cleaning liquid before the gas discharge unit discharges the gas toward the region of the substrate.

12. 12. The processing method according to claim 9, wherein in the standby section, an airflow amplification section provided around the gas discharge section draws gas around the gas discharge section into the flow of gas discharged from the gas discharge section by the Coanda effect, thereby amplifying the airflow hitting the substrate.

13. The processing method according to claim 12 , wherein the air volume amplifying section has an annular section that surrounds the entire periphery of the gas discharge section.

14. The processing method according to claim 12 or 13, wherein the gas discharge portion protrudes further toward the substrate than the air volume amplification portion.

15. The processing method according to any one of claims 12 to 14, wherein an inlet for taking in gas from the air volume amplifier has an area larger than an outlet for blowing out gas from the air volume amplifier.

16. The processing method according to any one of claims 9 to 15, wherein the liquid is removed from only a portion of the substrate in the waiting section.

Images