Composition and method for cleaning adhesive polymers

Abstract

The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains: at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.

Description

[Technical Field]

[0001] The present invention relates to a composition that can be used to decompose and clean an adhesive that contains an adhesive polymer used for temporarily bonding a device wafer to a support wafer (carrier wafer) and that remains on the device wafer during a semiconductor wafer thinning process, and a method for cleaning an adhesive polymer using the composition. [Background technology]

[0002] In three-dimensional packaging technology for increasing semiconductor density, the thickness of each semiconductor wafer is reduced and multiple semiconductor wafers connected by through-silicon vias (TSVs) are stacked. Specifically, the back side of a device wafer on which semiconductor devices are formed is polished to make it thinner, and then electrodes including TSVs are formed on the back side.

[0003] In the process of polishing the backside of a device wafer, a support wafer, also known as a carrier wafer, is temporarily bonded to the semiconductor device-forming surface of the device wafer using an adhesive to impart mechanical strength to the device wafer. For example, a glass wafer or a silicon wafer is used as the support wafer. After the polishing process, if necessary, metal wiring or electrode pads containing Al, Cu, Ni, Au, etc., inorganic films such as oxide films and nitride films, or resin layers containing polyimide, etc., are formed on the polished surface (backside) of the device wafer. The backside of the device wafer is then bonded to a tape with an acrylic adhesive layer fixed by a ring frame, thereby securing the device wafer to the tape. The device wafer is then separated from the support wafer (debonding), the adhesive on the device wafer is peeled off, and any adhesive residue on the device wafer is washed away using a cleaning agent.

[0004] Adhesives containing heat-resistant polyorganosiloxane compounds as adhesive polymers are used for temporary bonding of device wafers. In particular, when the adhesive is a crosslinked polyorganosiloxane compound, cleaning agents are required to perform two functions: cleaving Si-O bonds and dissolving decomposition products in a solvent. Examples of such cleaning agents include those containing fluorine-based compounds such as tetrabutylammonium fluoride (TBAF) dissolved in polar aprotic solvents. The fluoride ions in TBAF are involved in cleaving Si-O bonds via Si-F bond formation, thereby imparting etching capabilities to the cleaning agent. Polar aprotic solvents can dissolve TBAF and do not solvate fluoride ions via hydrogen bonds, thereby enhancing the reactivity of fluoride ions.

[0005] Patent Document 1 (JP 2014-133855 A) describes a cleaning liquid for siloxane resins in which tetraalkylammonium hydroxide is dissolved in a polar aprotic solvent.

[0006] Patent Document 2 (JP 2015-505886 A) describes a cleaning liquid of polysiloxane in which TBAF is dissolved in an ester or a ketone.

[0007] Patent Document 3 (Japanese Patent Laid-Open Publication No. 2004-000969) describes a cleaning liquid in which TBAF is dissolved in propylene glycol alkyl ether alcoate. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-133855 [Patent Document 2] Special Publication No. 2015-505886 [Patent Document 3] Japanese Patent Application Laid-Open No. 2004-000969 Summary of the Invention [Problem to be solved by the invention]

[0009] The role of the solvent in cleaning agents containing fluorine compounds and solvents, such as TBAF, is thought to be to sufficiently dissolve the highly polar fluorine compounds, which are reactive substances, and to ensure sufficient affinity with the surface of low-polarity adhesives, thereby ensuring the reactivity of the fluoride ions contained in the fluorine compounds and dissolving the decomposition products of the adhesive.

[0010] Substituents may be introduced into adhesive polymers contained in adhesives to improve heat resistance, releasability, etc., which may cause the adhesive surface to exhibit various polarities. It is desirable for cleaning agents to exhibit excellent affinity for adhesive surfaces exhibiting such various polarities, thereby achieving a high etching rate.

[0011] The present inventors have found that even when an aprotic N-substituted amide compound and dipropylene glycol dimethyl ether are used as a solvent to dissolve decomposition products of an adhesive while ensuring the reactivity of fluoride ions contained in the fluorine compound, the etching rate of the composition may decrease over the storage period after preparation of the composition.

[0012] The present invention provides a composition that inhibits the decrease in etching rate over time. [Means for solving the problem]

[0013] The present inventors have found that the decrease in etching rate over time can be suppressed by using a composition containing a quaternary alkylammonium fluoride or a hydrate thereof, an N-substituted amide compound having no active hydrogen on a nitrogen atom, dipropylene glycol dimethyl ether, and an antioxidant.

[0014] That is, the present invention includes the following [1] to

[11] . [1] A composition comprising at least one of a quaternary alkylammonium fluoride and a quaternary alkylammonium fluoride hydrate, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom as an aprotic solvent, and (B) dipropylene glycol dimethyl ether, and an antioxidant. [2] The composition according to [1], wherein the antioxidant comprises at least one selected from the group consisting of dibutylhydroxytoluene (BHT), butylhydroxyanisole (BHA), and ascorbic acid. [3] The composition according to either [1] or [2], wherein the content of the antioxidant is 10 ppm by mass to 1000 ppm by mass. [4] The (A) N-substituted amide compound is represented by formula (1): [ka] (In formula (1), R 1 represents an alkyl group having 1 to 4 carbon atoms. The composition according to any one of [1] to [3], wherein the 2-pyrrolidone derivative compound is represented by the following formula: [5] The (A) N-substituted amide compound is represented by the formula (1) R 1 The composition according to [4], wherein the compound is a 2-pyrrolidone derivative compound in which [6] The composition according to any one of [1] to [5], wherein the content of the quaternary alkylammonium fluoride is 0.01 to 10% by mass. [7] The quaternary alkylammonium fluoride has the formula (2): [ka] (In formula (2), R 2 ~R 5 each independently represents an alkyl group selected from the group consisting of a methyl group, an ethyl group, an n-propyl group, an isopropyl group, and an n-butyl group. The composition according to any one of [1] to [6], wherein the tetraalkylammonium fluoride is represented by the following formula: [8] The composition according to any one of [1] to [7], wherein the content of the (A) N-substituted amide compound is 50 to 95 mass % and the content of the (B) dipropylene glycol dimethyl ether is 5 to 50 mass % relative to 100 mass % of the aprotic solvent. [9] The composition according to any one of [1] to [8], which is a composition for decomposing and cleaning an adhesive polymer.

[10] The composition according to [9], wherein the adhesive polymer is a polyorganosiloxane compound.

[11] A method for cleaning an adhesive polymer on a substrate using the composition according to any one of [1] to

[10] . [Effects of the Invention]

[0015] The composition of the present invention can suppress a decrease in etching rate over time, which is advantageous for long-term storage of the composition.

[0016] The above description should not be considered as a disclosure of all embodiments of the present invention and all advantages associated with the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] The present invention will now be described in more detail with reference to exemplary embodiments.

[0018] [Composition] The composition of one embodiment comprises at least one of a quaternary alkylammonium fluoride and a quaternary alkylammonium fluoride hydrate, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom as an aprotic solvent, and (B) dipropylene glycol dimethyl ether (DPGDME), and an antioxidant.

[0019] The composition of one embodiment contains an N-substituted amide compound (also referred to simply as "N-substituted amide compound") as a solvent, which does not have an active hydrogen atom on the nitrogen atom (i.e., no hydrogen atom is directly bonded to the nitrogen atom). It is known that N-substituted amide compounds are gradually oxidized to form oxides when exposed to oxygen. For example, when N-methylpyrrolidone (NMP) is oxidized, NMP derivatives such as N-methylsuccinimide are produced. The oxidation products of these N-substituted amide compounds produce products in the composition that have hydrogen atoms active against fluoride ions, which reduces the activity of fluoride ions and, as a result, the etching rate decreases over time. Therefore, in order to maintain the etching rate, it is considered desirable to suppress the oxidation of the N-substituted amide compound.

[0020] <Quaternary alkylammonium fluorides and their hydrates> Quaternary alkylammonium fluorides and their hydrates release fluoride ions, which are involved in the cleavage of Si-O bonds. The quaternary alkylammonium moiety allows the salt quaternary alkylammonium fluoride to dissolve in aprotic solvents. Various compounds can be used as quaternary alkylammonium fluorides without particular limitations. Hydrates of quaternary alkylammonium fluorides include, for example, trihydrate, tetrahydrate, and pentahydrate. Quaternary alkylammonium fluorides may be one type or a combination of two or more types. Non-hydrated and hydrated quaternary alkylammonium fluorides can be used in any ratio.

[0021] In one embodiment, the quaternary alkylammonium fluoride has the formula (2): [ka] (In formula (2), R 2 ~R 5 each independently represents an alkyl group selected from the group consisting of a methyl group, an ethyl group, an n-propyl group, an isopropyl group, and an n-butyl group. From the viewpoint of availability, R 2 ~R 5 are preferably all the same alkyl group. Examples of such quaternary alkylammonium fluorides include tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride. From the standpoints of decomposition and cleaning performance, availability, price, and the like, the quaternary alkylammonium fluoride is preferably tetrabutylammonium fluoride (TBAF).

[0022] The content of the quaternary alkylammonium fluoride in the composition is preferably 0.01 to 10% by mass. Here, when the composition contains a hydrate of the quaternary alkylammonium fluoride, the "content of the quaternary alkylammonium fluoride" refers to the mass of the quaternary alkylammonium fluoride alone, excluding the mass of the hydrated water. The content of the quaternary alkylammonium fluoride in the composition is more preferably 1 to 10% by mass, even more preferably 3 to 7% by mass, and particularly preferably 4 to 6% by mass. By setting the content of the quaternary alkylammonium fluoride to 0.01% by mass or more, adhesive polymers can be effectively decomposed and cleaned, while by setting the content to 10% by mass or less, corrosion of metal portions included in the device formation surface of a device wafer can be prevented or suppressed.

[0023] Aprotic solvents The composition contains, as an aprotic solvent, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom, and (B) dipropylene glycol dimethyl ether.

[0024] The content of the aprotic solvent in the composition is preferably 80 to 99.98 mass %, more preferably 85 to 99.95 mass %, and even more preferably 90 to 99.9 mass %.

[0025] [(A) N-substituted amide compound having no active hydrogen atom on the nitrogen atom] (A) N-substituted amide compounds having no active hydrogen atom on the nitrogen atom (also simply referred to as "(A) N-substituted amide compounds") are relatively highly polar aprotic solvents and can uniformly dissolve or disperse quaternary alkylammonium fluorides and their hydrates in the composition. In one embodiment, the "(A) N-substituted amide compounds" also include urea compounds (carbamide compounds) having no active hydrogen atom on the nitrogen atom. Various compounds can be used as the (A) N-substituted amide compound without any particular limitation, including acyclic N-substituted amides such as N,N-dimethylformamide (DMF), N,N-diethylformamide, N,N-dimethylacetamide, N,N-diethylacetamide, N,N-dimethylpropionamide, N,N-diethylpropionamide, and tetramethylurea; and cyclic N-substituted amides such as 2-pyrrolidone derivatives, 2-piperidone derivatives, ε-caprolactam derivatives, 1,3-dimethyl-2-imidazolidinone (DMI), 1-methyl-3-ethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, and 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone (N,N'-dimethylpropyleneurea). Among these, the (A) N-substituted amide compound is preferably a cyclic N-substituted amide. (A) The N-substituted amide compound may be one type or a combination of two or more types.

[0026] In one embodiment, the (A) N-substituted amide compound has the formula (1): [ka] (In formula (1), R 1 represents an alkyl group having 1 to 4 carbon atoms. The 2-pyrrolidone derivative compound represented by formula (1) is represented by the formula (1). Examples of the alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a t-butyl group. Examples of the 2-pyrrolidone derivative compound represented by formula (1) include N-methylpyrrolidone (NMP), N-ethylpyrrolidone (NEP), N-propylpyrrolidone, and N-butylpyrrolidone.

[0027] (A) N-substituted amide compounds are compounds represented by the formula (1) R 1 is preferably a 2-pyrrolidone derivative compound in which R is a methyl group or an ethyl group, 1 is a methyl group, that is, a 2-pyrrolidone derivative compound, i.e., N-methylpyrrolidone.

[0028] The content of the N-substituted amide compound in the aprotic solvent is preferably 50 to 95 mass%, more preferably 60 to 95 mass%, and even more preferably 70 to 90 mass%, when the aprotic solvent is taken as 100 mass%.

[0029] [(B) Dipropylene glycol dimethyl ether] By combining (B) dipropylene glycol dimethyl ether (DPGDME) with (A) N-substituted amide compounds, a mixed solvent system can be formed that exhibits high affinity for adhesive surfaces. Compositions using such mixed solvent systems can achieve high etching rates by effectively utilizing the reactivity of quaternary alkylammonium fluorides.

[0030] The content of dipropylene glycol dimethyl ether in the aprotic solvent is preferably 5 to 50 mass%, more preferably 5 to 40 mass%, and even more preferably 10 to 30 mass%, when the aprotic solvent is taken as 100 mass%.

[0031] Additional Aprotic Solvents The composition may contain an additional aprotic solvent other than (A) the N-substituted amide compound and (B) dipropylene glycol dimethyl ether. Examples of such additional aprotic solvents include dialkyl ethers of glycols such as ethylene glycol dimethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, tripropylene glycol dimethyl ether, tripropylene glycol diethyl ether, tripropylene glycol di-n-butyl ether, tetraethylene glycol dimethyl ether, and tetrapropylene glycol dimethyl ether; and dialkyl ethers such as dibutyl ether, dipentyl ether, dihexyl ether, diheptyl ether, dioctyl ether, butylhexyl ether, and butyloctyl ether.

[0032] The flash point of the additional aprotic solvent is preferably 21°C or higher. By using an additional aprotic solvent with a flash point of 21°C or higher, i.e., one that does not fall under the category of Class 4, Category 1 Petroleum Hazardous Materials, requirements for equipment, work environment, etc., during the production and use of the composition can be reduced. For example, the flash points of diethylene glycol dimethyl ether and dibutyl ether are 51°C and 25°C, respectively. The flash point of dipropylene glycol dimethyl ether is 60°C. The flash point is measured by the tag-closed container method (JIS K 2265-1:2007).

[0033] The content of the additional aprotic solvent in the aprotic solvent is preferably 10% by mass or less, more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on 100% by mass of the aprotic solvent. In one embodiment, the aprotic solvent does not contain any additional aprotic solvent, i.e., consists of (A) an N-substituted amide compound and (B) dipropylene glycol dimethyl ether.

[0034] <Antioxidants> The antioxidant prevents the N-substituted amide compound in the solvent from being oxidized by air to produce an oxide. The type of antioxidant is not particularly limited, but examples include dibutylhydroxytoluene (BHT), butylhydroxyanisole (BHA), ascorbic acid and its derivatives, tocopherol and its derivatives, and sodium erythorbate. These antioxidants have excellent solubility in aprotic solvents and can also act as antioxidants for (B) dipropylene glycol dimethyl ether and other ethers. One type of antioxidant may be used alone, or two or more types may be used in combination. From the standpoints of availability, cost, and the like, the antioxidant is preferably at least one selected from the group consisting of dibutylhydroxytoluene (BHT), butylhydroxyanisole (BHA), and ascorbic acid, and more preferably dibutylhydroxytoluene (BHT).

[0035] The content of the antioxidant in the composition is preferably 10 ppm by mass to 1000 ppm by mass. The content of the antioxidant in the composition is more preferably 10 ppm by mass to 500 ppm by mass, even more preferably 20 ppm by mass to 200 ppm by mass, and particularly preferably 30 ppm by mass to 100 ppm by mass. By setting the content of the antioxidant within the above range, it is possible to more effectively suppress a decrease in the etching rate over time. Furthermore, by setting the content of the antioxidant to 1000 ppm by mass or less, it is possible to maintain an initial etching rate equivalent to that when no antioxidant is used, and to suppress coloration of the composition due to the antioxidant or its reaction products.

[0036] <Additives and other ingredients> The composition may contain additives such as surfactants, preservatives, and antifoaming agents as optional components, to the extent that the effects of the present invention are not significantly impaired.

[0037] In one embodiment, the composition is substantially free of or free of protic solvents. For example, the content of protic solvents in the composition can be 5% by weight or less, 3% by weight or less, or 1% by weight or less. The protic solvent that can be included in the composition can be water derived from a hydrate of a quaternary alkylammonium fluoride.

[0038] In one embodiment, the composition is substantially free of or free of aprotic solvents selected from ketones and esters. For example, the content of aprotic solvents selected from ketones and esters in the composition can be 1% by mass or less, 0.5% by mass or less, or 0.1% by mass or less. In this embodiment, in the presence of a fluorine compound, reaction products (aldol self-condensation products) or decomposition products (alcohols and carboxylic acids) formed from ketones or esters are solvated with fluoride ions, which can prevent deactivation of fluoride ions and prevent a decrease in etching rate over time.

[0039] The composition of one embodiment can be used as a composition for dissolving and cleaning adhesive polymers contained in various adhesives. The adhesive polymer is not particularly limited as long as it can be cleaned using the composition of one embodiment. In addition to the adhesive polymer, the adhesive may contain optional components such as a curing agent, a curing accelerator, a crosslinking agent, a surfactant, a leveling agent, and a filler.

[0040] <Adhesive polymer> In one embodiment, the adhesive polymer contains Si-O bonds. The adhesive polymer is degraded or loses its cross-linked structure by cleavage of the Si-O bonds by the fluoride ions of the quaternary alkylammonium fluoride, making it soluble in an aprotic solvent and thus removable from the surface of a device wafer or the like.

[0041] The adhesive polymer containing Si-O bonds is preferably a polyorganosiloxane compound. Because polyorganosiloxane compounds contain numerous siloxane bonds (Si-O-Si), they can be effectively decomposed and cleaned using the composition. Examples of polyorganosiloxane compounds include silicone resins such as silicone elastomers, silicone gels, and MQ resins, as well as their modified forms, such as epoxy-, acrylic-, methacrylic-, amino-, and mercapto-modified forms. The polyorganosiloxane compound may also be a silicone-modified polymer, such as a silicone-modified polyurethane or a silicone-modified acrylic resin.

[0042] In one embodiment, the adhesive polymer is an addition-curable silicone elastomer, silicone gel, or silicone resin. These addition-curable silicones contain an ethylenically unsaturated polyorganosiloxane, such as a vinyl-terminated polydimethylsiloxane or a vinyl-terminated MQ resin, and a polyorganohydrogensiloxane, such as a polymethylhydrogensiloxane, as a crosslinker, and are cured using a hydrosilylation catalyst, such as a platinum catalyst.

[0043] In another embodiment, the adhesive polymer comprises an aralkyl-, epoxy-, or phenyl-containing polydiorganosiloxane, particularly an aralkyl-, epoxy-, or phenyl-containing polydimethylsiloxane. An adhesive comprising such an adhesive polymer may be used for temporary bonding in combination with an adhesive comprising the addition-curable silicone.

[0044] [How to clean adhesive polymers] Cleaning of adhesive polymers on substrates such as silicon wafers can be performed using a composition by various conventional methods. Examples of methods for cleaning adhesive polymers include spin-etching, in which a composition is dispensed onto the substrate so as to come into contact with the adhesive polymer while rotating the substrate at a predetermined speed using a spin coater or the like; spraying the composition onto the adhesive polymer on the substrate; and dipping, in which the substrate having the adhesive polymer is immersed in a bath containing the composition. The temperature for decomposition and cleaning may vary depending on the type and amount of adhesive polymer on the substrate, and is generally 20°C to 90°C, preferably 40°C to 60°C. The time for decomposition and cleaning may vary depending on the type and amount of adhesive polymer on the substrate, and is generally 5 seconds to 10 hours, preferably 10 seconds to 2 hours. Ultrasonic waves may be applied to the composition bath or the substrate during decomposition and cleaning.

[0045] After disassembly and cleaning, the substrate may be rinsed with alcohol such as isopropyl alcohol (IPA), ion-exchanged water (DIW), or the like, and the substrate may be dried by spraying with nitrogen gas, air, or the like, or by heating under normal pressure or reduced pressure.

[0046] [Device wafer manufacturing method] In one embodiment, a method for manufacturing a device wafer includes cleaning an adhesive polymer on the device wafer with the composition. After cleaning, the device wafer may be optionally rinsed or dried.

[0047] The method for manufacturing a device wafer may further include the following steps: forming semiconductor devices on a substrate such as a silicon wafer to obtain a device wafer, placing the semiconductor device-forming surface of the device wafer opposite a support wafer and temporarily bonding the device wafer and the support wafer together with an adhesive containing an adhesive polymer, thinning the device wafer by polishing the surface (backside) of the device wafer opposite the device-forming surface, and separating the support wafer from the device wafer. The formation of the semiconductor devices, temporary bonding of the device wafer and the support wafer, polishing the backside of the device wafer, and separating the device wafer from the support wafer can be performed by conventionally known methods without any particular limitation.

[0048] [Support wafer regeneration method] The composition can be used to reclaim support wafers used in the manufacture of device wafers. In one embodiment, a method for reclaiming a support wafer includes cleaning an adhesive polymer on the support wafer with the composition. After cleaning, the support wafer may be rinsed or dried as needed. [Example]

[0049] The present invention will be described in more detail below based on examples, but the present invention is not limited to these examples.

[0050] [Example 1] Preparation of a composition containing an antioxidant (BHT) 3.332 g of tetrabutylammonium fluoride trihydrate (TBAF·3H2O) and 0.0030 g of dibutylhydroxytoluene (BHT) (Tokyo Chemical Industry Co., Ltd.) were added to a 125 mL polyethylene container, followed by 38.934 g of N-methylpyrrolidone (NMP) and 12.017 g of dipropylene glycol dimethyl ether (DPGDME) (Nippon Nyukazai Co., Ltd.), and the TBAF·3H2O was dissolved by mixing. In this way, a 5 wt% TBAF mixed solvent composition containing 55 ppm BHT at an NMP:DPGDME mass ratio of 0.764:0.236 was prepared. Furthermore, 0.0059 g or 0.0291 g of BHT was added in the same manner to prepare compositions of 5 mass % TBAF mixed solvent containing 109 mass ppm or 536 mass ppm of BHT in an NMP:DPGDME mass ratio of 0.764:0.236.

[0051] [Comparative Example 1] A composition of 5 mass % TBAF mixed solvent in which the mass ratio of NMP:DPGDME was 0.764:0.236 was prepared in the same manner as in Example 1, except that BHT was not used.

[0052] Cleaning Test A 12-inch (300 mm) silicon wafer (770 μm thick) was cut into 1.5 cm x 1.5 cm pieces. An adhesive mixture of 2.1484 g of SYLGARD® 184 (manufactured by DuPont Toray Specialty Materials Co., Ltd.) base agent and 0.2137 g of curing agent was drawn up with a Pasteur pipette and dropped one drop onto each cut silicon wafer. The wafer was then heated in a dryer (125°C) for 20 minutes to form an adhesive layer on the silicon wafer. This was used as a test specimen, and the thickness of the center of the specimen was measured using a micrometer.

[0053] A 50 cc screw cap bottle was placed on a magnetic stirrer. 15.0 mL of the composition (within 30 minutes of preparation) and a stir bar were added to the screw cap bottle. One test piece was immersed in the composition, and the stir bar was rotated at 900 rpm for 5 minutes at room temperature (25°C). After immersion, the test piece was removed with tweezers and thoroughly rinsed using a wash bottle of isopropyl alcohol (IPA). The test piece was then thoroughly rinsed using a wash bottle of ion-exchanged water (DIW) in the same manner. After drying the water by spraying nitrogen gas onto the test piece, the thickness of the center of the test piece was measured using a micrometer. The difference in thickness of the test piece before and after immersion divided by 5 (min) was defined as the etching rate (ER). Similar tests were conducted on days 7, 14, and 25 after the composition was prepared.

[0054] The etching rates of Example 1 and Comparative Example 1 were measured and the results are shown in Table 1.

[0055] [Table 1]

[0056] [Example 2] Preparation of a composition containing an antioxidant (BHA) 3.332 g of tetrabutylammonium fluoride trihydrate (TBAF·3H2O) and 0.03054 g of butylhydroxyanisole (BHA) (Kanto Chemical Co., Ltd.) were added to a 125 mL polyethylene container, followed by 38.957 g of N-methylpyrrolidone (NMP) and 12.156 g of DPGDME (Nippon Nyukazai Co., Ltd.), and the TBAF·3H2O was dissolved by mixing. In this way, a 5 mass% TBAF mixed solvent composition containing 560 mass ppm of BHA in an NMP:DPGDME mass ratio of 0.764:0.236 was prepared. Furthermore, using the same procedure, 0.00335 g or 0.00654 g of BHA was added to prepare 5 mass % TBAF mixed solvent compositions containing 55 mass ppm or 108 mass ppm of BHA in an NMP:DPGDME mass ratio of 0.764:0.236.

[0057] [Example 3] Preparation of a composition containing an antioxidant (ascorbic acid) A 5% by mass TBAF mixed solvent composition containing 500 ppm by mass of L-(+)-ascorbic acid and an NMP:DPGDME mass ratio of 0.764:0.236 was prepared by adding 0.02998 g of L-(+)-ascorbic acid (Kanto Chemical Co., Inc.) using the same procedure as in Example 2. Also, a 5% by mass TBAF mixed solvent composition containing 57 ppm by mass or 99 ppm by mass of L-(+)-ascorbic acid and an NMP:DPGDME mass ratio of 0.764:0.236 was prepared by adding 0.00360 g or 0.00597 g of L-(+)-ascorbic acid using the same procedure.

[0058] The etching rates of Examples 2 and 3 were measured in the same manner as in Example 1, and the results are shown in Table 2.

[0059] [Table 2] [Industrial Applicability]

[0060] The composition of the present invention can be suitably used for decomposing and cleaning adhesive residues used in the process of thinning semiconductor wafers, particularly adhesive residues containing a polyorganosiloxane compound as an adhesive polymer, from device wafers.

Claims

1. A composition comprising at least one of a quaternary alkylammonium fluoride and a quaternary alkylammonium fluoride hydrate, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom as an aprotic solvent, and (B) dipropylene glycol dimethyl ether, and an antioxidant, The composition is a decomposition cleaning composition for adhesive polymers, The adhesive polymer is a polyorganosiloxane compound. composition.

2. 2. The composition of claim 1, wherein the antioxidant comprises at least one selected from the group consisting of dibutylhydroxytoluene (BHT), butylhydroxyanisole (BHA), and ascorbic acid.

3. The composition according to claim 1 or 2, wherein the content of the antioxidant is 10 ppm by mass to 1000 ppm by mass.

4. The (A) N-substituted amide compound is represented by formula (1): 【Chemistry 1】 (In formula (1), R １ represents an alkyl group having 1 to 4 carbon atoms. The composition according to any one of claims 1 to 3, wherein the compound is a 2-pyrrolidone derivative compound represented by the formula:

5. The (A) N-substituted amide compound is represented by the formula (1) R １ The composition according to claim 4, which is a 2-pyrrolidone derivative compound, wherein is a methyl group or an ethyl group.

6. The composition according to any one of claims 1 to 5, wherein the content of the quaternary alkylammonium fluoride is 0.01 to 10 mass%.

7. The quaternary alkylammonium fluoride has the formula (2): 【Chemistry 2】 (In formula (2), R ２ ~R ５ each independently represents an alkyl group selected from the group consisting of a methyl group, an ethyl group, an n-propyl group, an isopropyl group, and an n-butyl group. The composition according to any one of claims 1 to 6, wherein the tetraalkylammonium fluoride is represented by the formula:

8. The composition according to any one of claims 1 to 7, wherein the content of the (A) N-substituted amide compound is 50 to 95 mass% and the content of the (B) dipropylene glycol dimethyl ether is 5 to 50 mass% relative to 100 mass% of the aprotic solvent.

9. A method for cleaning adhesive polymers on a substrate using a composition according to any one of claims 1 to 8.

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