Gas separation control in spatial atomic layer deposition

Abstract

To provide a deposition system including an apparatus and a method for controlling gas separation in a spatial atomic layer deposition chamber for minimizing vapor phase mixture in atomic layer deposition.SOLUTION: A system (processing chamber 200) for spatial atomic layer deposition includes at least one first exhaust system 350 and at least one second exhaust system 360 that communicate with a controller 390. Each exhaust system includes a throttle valve 351, 361 and a pressure gauge 352, 362 to control pressure in a processing region 321, 322 associated with the individual exhaust system.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to apparatus for processing substrates. In particular, embodiments of the present disclosure relate to an apparatus and method for controlling gas separation in a spatial atomic layer deposition chamber. [Background technology]

[0002] The formation of semiconductor devices is generally performed in a substrate processing system or platform containing multiple chambers, which may also be referred to as a cluster tool. In some cases, the purpose of a multi-chamber processing platform or cluster tool is to perform two or more processes on a single substrate sequentially in a controlled environment. However, in other cases, a multi-chamber processing platform may perform only a single processing step on multiple substrates. Additional chambers may be used to maximize the rate at which substrates are processed. In the latter case, the process performed on the substrates is typically a batch process, in which a relatively large number of substrates, e.g., 25 or 50, are processed simultaneously in a given chamber. Batch processing is particularly beneficial for processes, such as atomic layer deposition (ALD) processes and some chemical vapor deposition (CVD) processes, that are too time-consuming to perform on individual substrates in an economically viable manner.

[0003] The concept of spatial ALD is based on the distinct separation of different gas-phase reactive chemicals. To avoid gas-phase reactions, chemical mixing is prevented. A typical design of a spatial ALD chamber can include a narrow gap between the susceptor (or wafer surface) and the gas injector. This gap can range from about 0.5 mm to about 2.5 mm. Vacuum pumping channels are located around each chemical showerhead. To minimize gas-phase mixing, inert gas purge channels exist between the chemical showerheads. Despite these inherent design features, gas flows and pumping levels are managed to avoid gas-phase mixing of chemicals from different channels. There is a continuing need in the art for apparatus and methods for minimizing gas-phase mixing. Summary of the Invention

[0004] One or more embodiments of the present disclosure are directed to a deposition system including a processing chamber. The processing chamber has walls defining a chamber volume. The processing chamber includes a susceptor assembly and a gas supply assembly, with at least one first processing region between the gas supply assembly and the susceptor assembly and at least one second processing region between the gas supply assembly and the susceptor assembly. The at least one first processing region and the at least one second processing region are separated by a gas curtain. A chamber exhaust system is in fluid communication with the chamber volume. The chamber exhaust system includes a chamber exhaust throttle valve downstream of the processing chamber. The first exhaust system is in fluid communication with the at least one first processing region. The first exhaust system includes a first throttle valve and a first pressure gauge. The second exhaust system is in fluid communication with the at least one second processing region. The second exhaust system includes a second throttle valve and a second pressure gauge. The controller is in communication with the first exhaust system and the second exhaust system and controls one or more of the first throttle valve and / or the second throttle valve in response to signals from the first pressure gauge and / or the second pressure gauge.

[0005] A further embodiment of the present disclosure is directed to a deposition system including a processing chamber. The processing chamber has walls defining a chamber volume and includes a susceptor assembly and a gas supply assembly. The processing chamber includes at least one first processing region, at least one second processing region, at least one third processing region, and at least one fourth processing region. Each processing region is disposed between the gas supply assembly and the susceptor assembly. Each processing region is separated from an adjacent processing region by a gas curtain. A chamber exhaust system is in fluid communication with the chamber volume. The chamber exhaust system includes a chamber exhaust throttle valve downstream of the processing chamber. A first exhaust system is in fluid communication with the at least one first processing region and includes a first throttle valve and a first pressure gauge. A second exhaust system is in fluid communication with the at least one second processing region and includes a second throttle valve and a second pressure gauge. A third exhaust system is in fluid communication with the at least one third processing region and includes a third throttle valve and a third pressure gauge. The fourth exhaust system is in fluid communication with the at least one fourth processing region and includes a fourth throttle valve and a fourth pressure gauge. The controller communicates with the first exhaust system, the second exhaust system, the third exhaust system, and the fourth exhaust system, and controls the first throttle valve in response to a signal from the first pressure gauge, controls the second throttle valve in response to a signal from the second pressure gauge, controls the third throttle valve in response to a signal from the third pressure gauge, and controls the fourth throttle valve in response to a signal from the fourth pressure gauge.

[0006] A further embodiment of the present disclosure is directed to a deposition system including a processing chamber. The processing chamber has walls defining a chamber volume and includes a susceptor assembly and a gas supply assembly. The processing chamber includes at least one first processing region, at least one second processing region, at least one third processing region, and at least one fourth processing region. Each processing region is disposed between the gas supply assembly and the susceptor assembly. Each processing region is separated from an adjacent processing region by a gas curtain. A chamber exhaust system is in fluid communication with the chamber volume. The chamber exhaust system includes a chamber exhaust throttle valve downstream of the processing chamber. A first exhaust system is in fluid communication with the at least one first processing region and includes a first throttle valve and a first pressure gauge. A second exhaust system is in fluid communication with the at least one second processing region and includes a second throttle valve and a second pressure gauge. A third exhaust system is in fluid communication with the at least one third processing region and includes a third throttle valve and a third pressure gauge. The fourth exhaust system is in fluid communication with the at least one fourth processing region and includes a fourth throttle valve and a fourth pressure gauge. The controller communicates with the first exhaust system, the second exhaust system, the third exhaust system, and the fourth exhaust system, and controls the first throttle valve in response to a signal from the first pressure gauge, the second throttle valve in response to a signal from the second pressure gauge, the third throttle valve in response to a signal from the third pressure gauge, and the fourth throttle valve in response to a signal from the fourth pressure gauge. The first pressure gauge is an absolute pressure gauge located downstream of the first throttle valve, and the second pressure gauge is an absolute pressure gauge located downstream of the second throttle valve. The third pressure gauge is a differential pressure gauge measuring a pressure difference relative to the first pressure gauge, and the fourth pressure gauge is a differential pressure gauge measuring a pressure difference relative to the second pressure gauge.

[0007] In order that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the invention briefly summarized above will be realized by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that since the present disclosure is also susceptible to other equally effective embodiments, the accompanying drawings illustrate only typical embodiments of the disclosure and therefore should not be considered as limiting the scope of the invention. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional side view of a spatial atomic layer deposition chamber in accordance with one or more embodiments of the present disclosure. [Figure 2] 1 is a schematic plan view of a substrate processing system configured with four gas supply assembly units having a loading station in accordance with one or more embodiments of the present disclosure. [Figure 3] 1 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 4] 1 shows a perspective view of a susceptor assembly and gas supply assembly unit according to one or more embodiments of the present disclosure. [Figure 5] 1 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 6] 1 shows a schematic of a pie-shaped gas supply assembly according to one or more embodiments of the present disclosure. [Figure 7] 1 shows a schematic of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 8A] 1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 8B] 1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 8C] 1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 9] 1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 10]1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 11] 1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 12] 1 shows a schematic diagram of a processing chamber in accordance with one or more embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009] Embodiments of the present disclosure provide a substrate processing system for continuous substrate deposition that maximizes throughput and improves processing efficiency and uniformity. The substrate processing system may also be used for pre- and post-deposition treatment of substrates. Embodiments of the present disclosure relate to an apparatus and method for improving deposition uniformity within a batch process.

[0010] As used herein and in the appended claims, the terms "substrate" and "wafer" are used interchangeably to refer to a surface or portion of a surface on which processing occurs. Furthermore, those skilled in the art will understand that when reference is made to a substrate, it may also refer to only a portion of the substrate unless the context clearly indicates otherwise. For example, in spatially resolved ALD as described with respect to FIG. 1 , each precursor is delivered to the substrate, but any individual precursor stream is delivered to only a portion of the substrate at any one time. Furthermore, when reference is made to deposition on a substrate, it may refer to both a bare substrate and a substrate with one or more films or features deposited or formed thereon.

[0011] As used in this specification and the accompanying claims, the terms "reactive gas," "process gas," "precursor," "reactant," and the like are used interchangeably to refer to gases that contain species that are reactive in an atomic layer deposition process. For example, a first "reactive gas" may simply be adsorbed on the surface of a substrate and available for further chemical reaction with a second reactive gas.

[0012] Embodiments of the present disclosure are directed to methods and apparatus that minimize gas-phase mixing in spatial ALD through automated control of vacuum pumping for each chemical showerhead (channel) in each processing region of a batch processing chamber.

[0013] 1 is a schematic cross-sectional view of a portion of a processing chamber 20 in accordance with one or more embodiments of the present disclosure. The processing chamber 20 is generally a sealable enclosure operated under vacuum or at least low-pressure conditions. The chamber 100 includes a gas supply assembly 30 capable of supplying one or more gases across a top surface 61 of a substrate 60. The gas supply assembly 30 may be any suitable assembly known to those skilled in the art, and the particular gas supply assembly described should not be understood as limiting the scope of the present disclosure. An output face of the gas supply assembly 30 faces the first surface 61 of the substrate 60.

[0014] The substrate used in the embodiments of the present disclosure may be any suitable substrate. In some embodiments, the substrate is a rigid, discrete, generally planar substrate. As used herein and in the appended claims, the term "discrete" when used with respect to a substrate means that the substrate has fixed dimensions. In one or more embodiments, the substrate is a semiconductor substrate, such as a 200 mm or 300 mm diameter silicon substrate. In some embodiments, the substrate is one or more of silicon, silicon germanium, gallium arsenide, gallium nitride, germanium, gallium phosphide, indium phosphide, sapphire, and silicon carbide.

[0015] The gas supply assembly 30 includes multiple gas ports for delivering one or more gas streams to the substrate 60 and multiple vacuum ports disposed between each gas port for delivering the gas streams out of the processing chamber 20. In the embodiment of FIG. 1 , the gas supply assembly 30 includes a first precursor injector 120, a second precursor injector 130, and a purge gas injector 140. The injectors 120, 130, and 140 may be controlled by a system computer (not shown), such as a mainframe, or by a chamber-specific controller, such as a programmable logic controller. The precursor injector 120 injects a continuous (or pulsed) flow of a reactive precursor of compound A into the processing chamber 20 through multiple gas ports 125. The precursor injector 130 injects a continuous (or pulsed) flow of a reactive precursor of compound B into the processing chamber 20 through multiple gas ports 135. Purge gas injector 140 injects a continuous (or pulsed) flow of non-reactive or purge gas into process chamber 20 through multiple gas ports 145. The purge gas removes reactive materials and reactive by-products from process chamber 20. Purge gases are typically inert gases such as nitrogen, argon, and helium. Gas port 145 is located between gas ports 125 and 135 to separate precursors of compound A from precursors of compound B and to avoid cross-contamination between the precursors.

[0016] In another embodiment, a remote plasma source (not shown) may be coupled to the precursor injector 120 and the precursor injector 130 prior to injection of the precursor into the process chamber 20. Plasma of reactive species may be generated by applying an electric field to the compound within the remote plasma source. Any power source capable of activating the intended compound may be used. For example, power sources using DC, radio frequency (RF), and microwave (MW)-based discharge techniques may be used. If an RF power source is used, it may be capacitively or inductively coupled. Furthermore, activation may be induced by heat-based techniques, gas breakdown techniques, high-energy light sources (e.g., UV energy), or exposure to an X-ray source. Exemplary remote plasma sources are available from suppliers such as MKS Instruments, Inc. and Advanced Energy Industries, Inc.

[0017] The chamber 100 further includes a pumping system 150 coupled to the processing chamber 20. The pumping system 150 is generally configured to exhaust the gas stream from the processing chamber 20 through one or more vacuum ports 155. The vacuum ports 155 exhaust the gas stream from the processing chamber 20 after it reacts with the substrate surface and are also positioned between each gas port to limit cross-contamination between precursors.

[0018] The chamber 100 includes multiple partitions 160 positioned between the ports of the processing chamber 20. The lower portion of each partition extends close to the first surface 61 of the substrate 60, e.g., at a distance of about 0.5 mm or more from the first surface 61. The lower portions of the partitions 160 are thus spaced from the substrate surface by a sufficient distance to allow the gas flow to flow around the lower portions toward the vacuum port 155 after reacting with the substrate surface. Arrows 198 indicate the direction of gas flow. The partitions 160 also function as a physical barrier to gas flow, thereby reducing cross-contamination between precursors. The illustrated arrangement is merely exemplary and should not be considered limiting of the scope of the present disclosure. Those skilled in the art will appreciate that the illustrated gas delivery system is only one possible delivery system, and that other types of showerheads and gas delivery assemblies may also be used.

[0019] Atomic layer deposition systems of this type (i.e., multiple gases flowing independently toward the substrate simultaneously) are referred to as spatial ALD. In operation, substrate 60 is delivered to processing chamber 20 (e.g., by a robot) and may be placed on shuttle 65 before or after entering the processing chamber. Shuttle 65 moves along track 70 or some other suitable movement mechanism, passing below (or above) gas delivery assembly 30 and through processing chamber 20. In the embodiment shown in FIG. 1, shuttle 65 moves in a linear path through the chamber. FIG. 2, as further described below, shows an embodiment in which wafers move in a circular path through a carousel processing system.

[0020] Referring back to FIG. 1 , as the substrate 60 moves through the processing chamber 20, the first surface 61 of the substrate 60 is repeatedly exposed to reactive gas A from gas port 125, reactive gas B from gas port 135, and purge gas from intermediate gas port 145. The injection of purge gas is designed to remove unreacted materials from the previous precursor prior to exposing the substrate surface 110 to the next precursor. After each exposure to various gas flows (e.g., reactive gas or purge gas), the gas flows are exhausted through vacuum ports 155 by pumping system 150. Vacuum ports may be located on either side of each gas port, so that the gas flows are exhausted through vacuum ports 155 on both sides. In this manner, the gas flow from each gas port flows vertically downward toward the first surface 61 of the substrate 60, then across the substrate surface 110 around the bottom of partition 160, and finally upward toward vacuum port 155. In this manner, each gas can be uniformly supplied across the entire substrate surface 110. Arrows 198 indicate the direction of gas flow. The substrate 60 may also be rotated while exposed to the various gas flows. Rotating the substrate may help prevent stripes from forming in the formed layer. Rotation of the substrate may be a continuous or discontinuous process and may occur while the substrate is passing under the gas supply assembly 30 or while the substrate is in the region before and / or after the gas supply assembly 30.

[0021] 1, sufficient space is generally provided after the gas supply assembly 30 to ensure full exposure to the last gas port. Once the substrate 60 has passed completely under the gas supply assembly 30, the first surface 61 has been fully exposed to all gas ports in the processing chamber 20. The substrate can then be transported back in the opposite direction or forward. If the substrate 60 moves in the opposite direction, the substrate surface can be re-exposed to reactive gas A, purge gas, and reactive gas B in the reverse order of the first exposure.

[0022] The degree to which the substrate surface 110 is exposed to each gas can be determined, for example, by the flow rate of each gas exiting the gas ports and the speed of movement of the substrate 60. In one embodiment, the flow rate of each gas is controlled so as not to remove adsorbed precursors from the substrate surface 61. The width between each partition, the number of gas ports disposed on the processing chamber 20, and the number of times the substrate passes across the gas supply assembly can also determine the degree to which the substrate surface 61 is exposed to the various gases. Ultimately, the quantity and quality of the deposited film can be optimized by varying the factors mentioned above.

[0023] Although processing has been described using the gas supply assembly 30 to direct the flow of gas downward toward a substrate positioned below the gas supply assembly, it will be understood that other orientations are possible. In one embodiment, the gas supply assembly 30 directs the flow of gas upward toward the substrate surface. As used herein and in the appended claims, the term "passed" means that the substrate is moved from one side of the gas supply assembly to the other so that the entire surface of the substrate is exposed to each gas flow from the gas distribution plate. Unless further explained, the term "passed" does not imply any particular direction of the gas supply assembly, gas flow, or substrate position.

[0024] In one embodiment, shuttle 65 is a susceptor capable of carrying multiple substrates. Generally, the susceptor helps to create a uniform temperature across the substrates. Susceptor 66 is movable in both directions (left to right and right to left relative to the arrangement of FIG. 1) or circumferentially (with respect to FIG. 2). The susceptor has a top surface for carrying substrates and may be heated. As an example, the susceptor may be heated by radiant heat lamps 90, a heating plate, a resistive coil, or other heating device located below the susceptor or within the susceptor body.

[0025] 1 shows a cross-sectional view of a processing chamber with individual gas ports shown therein. This embodiment can be either a linear processing system where the width of the individual gas ports is approximately the same across the width of the gas distribution plate, or the individual gas ports can be pie-shaped segments where the width varies to fit the shape of the pie.

[0026] A processing chamber with multiple gas injectors can be used to simultaneously process multiple wafers so that they experience the same process flow. For example, as shown in FIG. 2, a processing chamber 100 has four gas supply assemblies 30 and four substrates 60. At the start of processing, the substrates 60 can be positioned between the gas supply assemblies 30. Rotating the carousel susceptor 66 by 45 degrees results in each substrate 60 moving toward the injector assembly 30 for film deposition. This is the position shown in FIG. 2. Rotating another 45 degrees moves the substrate 60 away from the gas supply assembly 30. Using spatial ALD injectors, films are deposited on the wafers while they are moving relative to the injector assembly. In some embodiments, the susceptor 66 is rotated so that the substrates 60 do not stop below the gas supply assembly 30. The number of substrates 60 and gas supply assemblies 30 can be the same or different. In some embodiments, the same number of wafers as there are gas supply assemblies are processed. In one or more embodiments, the number of wafers processed is an integer multiple of the number of gas delivery assemblies, e.g., with four gas delivery assemblies, 4x wafers are processed, where x is an integer value greater than or equal to 1.

[0027] The processing chamber 100 shown in FIG. 2 represents merely one possible configuration and should not be considered limiting to the scope of the present disclosure. Here, the processing chamber 100 includes multiple gas supply assemblies 30. In the embodiment shown, four gas supply assemblies 30 are evenly spaced around the processing chamber 100. While the processing chamber 100 shown is octagonal, those skilled in the art will understand that this is one possible shape and should not be considered limiting to the scope of the present disclosure. Furthermore, each segment can be configured to deliver gases in a space-type arrangement with multiple different reactive gases flowing from the same segment, or to deliver a single reactive gas or a mixture of reactive gases.

[0028] The processing chamber 100 includes a substrate support apparatus, shown as a circular susceptor 66 or susceptor assembly. The substrate support apparatus or susceptor 66 is capable of moving multiple substrates 60 beneath each of the gas delivery assemblies 30. A load lock 82 may be coupled to the side of the processing chamber 100 to allow for loading / unloading of substrates 60 to and from the chamber 100.

[0029] The processing chamber 100 may include multiple or a set of first treatment stations 80 positioned between any or each of the multiple gas delivery assemblies 30. In some embodiments, each of the first treatment stations 80 provides the same treatment to the substrate 60.

[0030] The number of treatment stations and the number of different types of treatment stations can vary depending on the process. For example, 1, 2, 3, 4, 5, 6, 7, or more treatment stations can be disposed between the gas supply assemblies 30. Each treatment station can independently provide a different treatment from all other treatment stations in the set, or a mixture of the same and different types of treatments can be present. In some embodiments, one or more of the individual treatment stations provide a different treatment than one or more of the other individual treatment stations. While the embodiment shown in FIG. 2 shows four gas supply assemblies with spaces between them that can accommodate several types of treatment stations, one skilled in the art will understand that a processing chamber can easily be combined with eight gas supply assemblies with gas curtains between them.

[0031] The treatment station can provide any suitable type of treatment to the substrate, the film on the substrate, or the susceptor assembly, such as UV lamps, flash lamps, plasma sources, and heaters. The wafer is then moved between positions with the gas delivery assembly 30, for example, to a position with a showerhead that delivers plasma to the wafer. The plasma station is referred to as treatment station 80. In one or more embodiments, a silicon nitride film can be formed using a plasma treatment after each deposition layer. Theoretically, ALD reactions are self-limiting as long as the surface is saturated, so further exposure to deposition gases will not cause damage to the film.

[0032] The carousel rotation can be continuous or discontinuous. In continuous processing, the wafer is constantly rotating so that it is exposed to each of the injectors in turn. In discontinuous processing, the wafer can be moved to an injector area and stopped, and then moved to an inter-injector area 84 and stopped. For example, the carousel can rotate so that the wafer moves from the inter-injector area, past the injector (or stops adjacent to the injector), and then moves to the next inter-injector area where the substrate can again rest. Pausing between injectors can provide time for further processing steps (e.g., exposure to plasma) between each layer deposition.

[0033] In some embodiments, the processing chamber includes multiple gas curtains 40. Each gas curtain 40 creates a barrier to prevent or minimize the movement of processing gases from the gas supply assembly 30 away from the gas supply assembly area and gases from the treatment stations 80 away from the treatment station area. The gas curtains 40 can include any suitable combination of gas and vacuum flows capable of separating individual processing sections from adjacent sections. In some embodiments, the gas curtain 40 is a purge (or inert) gas flow. In one or more embodiments, the gas curtain 40 is a vacuum flow that removes gases from the processing chamber. In some embodiments, the gas curtain 40 is a combination of purge gas and vacuum flows, such that there is a purge gas flow, a vacuum flow, and a purge gas flow, in that order. In one or more embodiments, the gas curtain 40 is a combination of vacuum and purge gas flows, such that there is a vacuum flow, a purge gas flow, and a vacuum flow, in that order. Although the gas curtains 40 shown in FIG. 2 are each positioned between the gas supply assembly 30 and the treatment station 80, it should be understood that these curtains may be positioned at any one or more points along the treatment path.

[0034] FIG. 3 illustrates one embodiment of a processing chamber 200, including a gas supply assembly 220, also referred to as an injector, and a susceptor assembly 230. In this embodiment, the susceptor assembly 230 is rigid. In one embodiment, the rigid body has a droop tolerance of less than 0.05 mm. Actuators 232 can be located, for example, in three locations in the outer diameter region of the susceptor assembly 230. As used herein and in the appended claims, the terms "outer diameter" and "inner diameter" refer to the regions near the outer and inner edges, respectively. The outer diameter is not a specific location at the innermost end of the susceptor assembly 230 (e.g., near the shaft 240), but is the region near the outer end 231 of the susceptor assembly 230. This can be seen in FIG. 3 from the placement of the actuators 232. The number of actuators 232 can vary from one to any number that fits within the available physical space. Some embodiments have two, three, four, or five sets of actuators 232 disposed in the outer diameter region 231. As used herein and in the appended claims, the term "actuator" refers to any single or multiple component mechanism that can move the susceptor assembly 230, or a portion of the susceptor assembly 230, toward or away from the gas supply assembly 220. For example, the actuators 232 may be used to ensure that the susceptor assembly 230 is substantially parallel to the gas supply assembly 220. As used in this context, the term "substantially parallel," as used herein and in the appended claims, means that the parallelism of multiple components does not vary by more than 5% relative to the distance between the components.

[0035] Once pressure is applied to the susceptor assembly 230 by the actuator 232, the susceptor assembly 230 may be leveled. When pressure is applied by the actuator 232, the distance of the gap 210 may be set to be within a range of about 0.1 mm to about 2.0 mm, or within a range of about 0.2 mm to about 1.8 mm, or within a range of about 0.3 mm to about 1.7 mm, or within a range of about 0.4 mm to about 1.6 mm, or within a range of about 0.5 mm to about 1.5 mm, or within a range of about 0.6 mm to about 1.4 mm, or within a range of about 0.7 mm to about 1.3 mm, or within a range of about 0.8 mm to about 1.2 mm, or within a range of about 0.9 mm to about 1.1 mm, or approximately 1 mm.

[0036] The susceptor assembly 230 is disposed below the gas supply assembly 220. The susceptor assembly 230 has a top surface 241 and, optionally, at least one recess 243 in the top surface 241. The recess 243 can be of any suitable shape and size, depending on the shape and size of the wafer 260 being processed. In the illustrated embodiment, the recess 243 has a stepped region around the outer edge of the recess 243. The step can be sized to support the outer edge of the wafer 260. The amount of the outer edge of the substrate 260 that is supported by the step can vary, depending on, for example, the thickness of the wafer and the presence of pre-existing features on the backside of the wafer.

[0037] 3, recess 243 in top surface 241 of susceptor assembly 230 is sized so that wafer 260 supported in recess 243 has a top surface 261 that is substantially coplanar with top surface 241 of susceptor assembly 230. As used herein and in the appended claims, the term "substantially coplanar" means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar within ±0.2 mm. In some embodiments, the top surfaces are coplanar within ±0.15 mm, ±0.10 mm, or ±0.05 mm.

[0038] 3 includes support posts 240 that can raise, lower, and rotate the susceptor assembly 230. The susceptor assembly 230 may include a heater, gas line, or electronics within the center of the support posts 240. The support posts 240 may be the primary means for increasing or decreasing the gap between the susceptor assembly 230 and the gas supply assembly 220 and moving the susceptor assembly 230 to a general position. The actuators 232 can then make fine adjustments to the position of the susceptor assembly to create a predetermined gap.

[0039] The processing chamber 100 shown in FIG. 3 is a carousel-type chamber in which the susceptor assembly 230 can hold multiple wafers 260. The gas supply assembly 220 can include multiple individual injector units 221. Each injector unit 221 can deposit a film or a portion of a film on the wafer 260 as the wafer moves beneath the injector unit 221. FIG. 4 shows a perspective view of the carousel-type processing chamber 200. Two pie-shaped injector units 221 are shown positioned above the susceptor assembly 230, generally on opposite sides of the susceptor assembly 230. This number of injector units 221 is shown by way of example only. It will be understood that more or fewer injector units 221 can be included. In some embodiments, there are a sufficient number of pie-shaped injector units 221 to conform to the shape of the susceptor assembly 230. In one embodiment, each of the individual pie-shaped injector units 221 can be moved, removed, and / or replaced individually without affecting any other injector units 221. For example, one segment can be lifted to allow a robot to access the area between the susceptor assembly 230 and the gas delivery assembly 220 to load / unload wafers 260.

[0040] 5 illustrates another embodiment of the present disclosure in which the susceptor assembly 230 is not rigid. In one embodiment, the susceptor assembly 230 has a sag tolerance of less than about 0.1 mm, or less than about 0.05 mm, or less than about 0.025 mm, or less than about 0.01 mm. Here, there are actuators 232 located in an outer diameter region 231 and an inner diameter region 239 of the susceptor assembly 230. The actuators 232 can be positioned in any suitable number of locations around the inner and outer edges of the susceptor assembly 230. In one embodiment, the actuators 232 are located in three locations in both the outer diameter region 231 and the inner diameter region 239. The actuators 232 in both the outer diameter region 231 and the inner diameter region 239 apply pressure to the susceptor assembly 230.

[0041] FIG. 6 illustrates a gas supply assembly 220 according to one or more embodiments of the present disclosure. The front surface 225 of a portion or segment of the generally circular gas supply assembly 220 is illustrated. As used in this specification and the accompanying claims, the term "generally circular" means that the overall shape of the component does not have any internal angles less than 80 degrees. Therefore, a generally circular shape can have any shape, including a square, pentagon, hexagon, heptagon, octagon, etc. Generally circular should not be construed as limiting a shape to a circle or a perfect polygon, but may also include ovals and imperfect polygons. The gas supply assembly 220 includes a plurality of elongated gas ports 125, 135, 145 on the front surface 225. The gas ports extend from an inner diameter region 239 to an outer diameter region 231 of the gas supply assembly 220.

[0042] The shape or aspect ratio of the individual ports may be directly proportional to or different from the shape or aspect ratio of the segments of the gas supply assembly. In some embodiments, the individual ports are shaped so that each point of a wafer following path 272 past gas supply assembly 220 has approximately the same residence time under each gas port. The path of the substrate may be perpendicular to the gas ports. In certain embodiments, each gas supply assembly includes multiple elongated gas ports that extend in a direction substantially perpendicular to the path of the substrate. As used in this specification and the accompanying claims, the term "substantially perpendicular" means that the general direction of movement is approximately perpendicular to the axis of the gas port. For pie-shaped gas ports, the axis of the gas port may be considered to be a line defined by the center point of the port's width extending along the length of the port. Each individual pie-shaped segment may be configured to supply a single reactive gas, or multiple reactive gases that are spatially separated or combined (e.g., as in a typical CVD process).

[0043] The plurality of gas ports includes a first reactive gas port 125 for supplying a first reactive gas to the processing chamber and a purge gas port 145 for supplying a purge gas to the processing chamber. The embodiment shown in Figure 6 also includes a second reactive gas port 135 for supplying a second reactive gas to the processing chamber.

[0044] Vacuum ports 155 separate the first reactive gas port 125 and the second reactive gas port 135 from the adjacent purge gas port 145. In other words, the vacuum ports are located between the first reactive gas port 125 and the purge gas port 145 and between the second reactive gas port 135 and the purge gas port 145. The vacuum ports exhaust gas from the processing chamber. In the embodiment shown in Figure 6, the vacuum port 155 extends all around the reactive gas ports such that a portion of the vacuum port 155 is located on the inner edge 227 and the outer edge 228 of each of the first reactive gas port 125 and the second reactive gas port 135.

[0045] In use, a substrate passes near the gas distribution plate 220 along a path 272. During passage, the substrate encounters a gas flow either into or out of the chamber in the following order: purge gas port 145, first vacuum port 1155a, first reactive gas port 125, second vacuum port 155b, purge gas 145, first vacuum port 155a, second reactive gas port 135, and second vacuum port 155b. The first vacuum port 155a and second vacuum port 155b are shown connected as a single vacuum port 155.

[0046] 7 shows a schematic of a spatial atomic layer deposition chamber according to one or more embodiments of the present disclosure. As can be seen, there is one pump for pumping the chamber and two other pumps for pumping the injectors (gas supply assemblies). Additionally, one inert purge gas enters the chamber volume, and several different gases (inert gases and reactive chemicals) enter the gas supply assemblies.

[0047] A chamber purge 205 flows an inert gas into the chamber, pressurizing the chamber space outside the reaction region, located between the susceptor assembly and the gas supply assembly. A chamber throttle valve is used to control the pressure in the chamber. The pressure in the chamber can be measured by a gauge 206.

[0048] Chemical precursors A and B flow into the chamber through separate chemical channels in the injector (gas delivery assembly). Each chemical channel is surrounded by a vacuum pumping channel. An inert gas purge curtain is placed between the chemical channels to maintain separation of the reactive gases.

[0049] The throttle valve control for pumping channels A and B uses foreline pressure control, which may mean adjusting the throttle valve angle to reach a pressure setpoint downstream of the throttle valve. This is the opposite of normal pressure control, where the pressure upstream of the throttle valve is controlled. The downstream / foreline pressure control for the A and B pumping lines may help ensure that the amount of gas pumped out of each pumping channel is equal to the amount of gas flowing into that channel and may include a portion of the inert separation gas. Overall, the amount of gas flowing into the chamber through the gas supply assembly should be pumped out of the chamber by pumps A and B.

[0050] The typical relationship between foreline pressure measurements and the actual gas flow into the pump is essentially linear. This is consistent with the law of conservation of mass. Theoretically, gas throughput to the pump (Q, Torr L / s) has a linear relationship with the pump foreline pressure (P, torr), with the slope being the pumping speed (C, L / s), where Q = C × P. In practice, the relationship is a curve depending on the vacuum pump speed, gas species, the physical location of the foreline pressure gauge, and the actual gas temperature detected by the foreline pressure gauge. One or more embodiments of the present disclosure advantageously provide consistent gas pressure control. In some embodiments, a processing system automatically monitors data curves for different chamber conditions and controls the foreline pressure based on the actual flow of gas. Advantageously, one or more embodiments provide foreline pressure control to manipulate gas pressure within the processing region of a processing chamber. Advantageously, one or more embodiments of the present disclosure provide gas flow control to minimize gas-phase reactions.

[0051] Still referring to FIG. 7 , one or more embodiments of the present disclosure are directed to a processing chamber 200 having a wall 201 defining a chamber volume 202. The embodiment shown in FIG. 7 is a schematic representation of a generally circular processing system, such as that shown in FIG. 4 . The processing chamber 200 includes a susceptor assembly 230 and a gas supply assembly 220. There is at least one first processing region 321 and at least one second processing region 322. As shown in FIG. 7 , the first processing region 321 is associated with a first processing gas, designated A, and the second processing region 322 is associated with a second processing gas, designated B. Those skilled in the art will appreciate that this is merely one exemplary possible arrangement and should not be considered limiting of the scope of the present disclosure. Each of the first processing region 321 and the second processing region 322 is disposed between the gas supply assembly 220 and the susceptor assembly 230. The first and second processing regions 321, 322 are each separated by a gas curtain 327. The gas curtain can be any suitable combination of gas and vacuum that prevents or minimizes mixing of the first and second process gases A, B.

[0052] The chamber exhaust system 340 is in fluid communication with the chamber volume 202. The chamber exhaust system 340 maintains a reduced pressure state within the chamber volume. The pressure within the chamber volume 202 can be the same or different from the pressure within the first processing region 321 and the second processing region 322. The chamber exhaust system 340 includes a chamber exhaust throttle valve 341 disposed downstream of the processing chamber 200. As used herein, the terms "upstream" and "downstream" refer to relative directions according to the flow of exhaust gases from the processing chamber interior. Downstream of the chamber exhaust throttle valve 341 is a vacuum source 399. The vacuum source 399 can be any suitable vacuum source, including, but not limited to, a house vacuum or a separate vacuum pump.

[0053] The processing chamber includes a first exhaust system 350 in fluid communication with at least one first processing region 321. The first exhaust system 350 shown in FIG. 7 includes vacuum ports 155 extending on either side of the first process gas A port 125. As shown in FIG. 6, the vacuum ports may extend around all four sides of the process gas A port 125. The first exhaust system 350 includes a first throttle valve 351 and a first pressure gauge 352. While the embodiment shown in FIG. 7 has the first pressure gauge 352 positioned downstream of the first throttle valve 351, this is only one representation of a possible arrangement. The first exhaust system 350 is connected to a suitable vacuum source, which may be the same as or different from the vacuum source 399.

[0054] The processing chamber 200 includes a second exhaust system 360 in fluid communication with at least one second processing region 322. The second exhaust system 360 shown in FIG. 7 includes vacuum ports 155 extending on either side of the second process gas B port 135. As shown in FIG. 6, the vacuum ports may extend around all four sides of the process gas B port 135. The second exhaust system 360 includes a second throttle valve 361 and a second pressure gauge 362. While the embodiment shown in FIG. 7 has the second pressure gauge 362 positioned downstream of the second throttle valve 361, this is only one representation of a possible arrangement. The second exhaust system 360 is connected to a suitable vacuum source, which may be the same as or different from the vacuum source 399.

[0055] A controller 390 is in communication with the first exhaust system 350 and the second exhaust system 360. The controller 390 can control the first throttle valve 351 in response to a signal from the first pressure gauge 352 and the second throttle valve 361 in response to a signal from the second pressure gauge 362. In some embodiments, the controller 390 opens and closes the throttle valves depending on the measurements from the pressure gauges to maintain separation of gases in the first processing region 321 and the second processing region 322. The controller 390 can be any suitable controller comprising one or more of hardware, firmware, and / or software. In some embodiments, the controller 390 includes a computer having a central processing unit, memory, storage, and / or circuitry configured to communicate with physical components associated with the processing chambers. For example, the computer can include computer-readable instructions on a computer-readable medium that allow a user to input process parameters, including, but not limited to, gas pressures, flow rates, and pressure differential tolerances.

[0056] FIG. 8A shows a schematic representation of the processing chamber of FIG. 7. The first process gas A and the second process gas B are generally represented by boxes that demarcate the gas ports 125 and 135. The vacuum port 155 is also represented as a box shown around each of the gas ports 125 and 135. This schematic representation is merely illustrative and should not be considered to suggest or limit the shape or width of the gas or vacuum ports. The embodiment shown in FIG. 8A includes a first pressure gauge 352 located downstream of the first throttle valve 351 and a second pressure gauge 362 located downstream of the second throttle valve 361. Although not shown, it will be understood that a controller, such as that of FIG. 7, may also be included.

[0057] 7 and 8A, the controller 390 monitors the pressure in the exhaust line downstream of the throttle valves 351, 361. If the pressure in the exhaust line is too low, the pressure in the processing region is too high, and the controller causes the appropriate throttle valve to open further. If the pressure in the exhaust line is too high, the pressure in the processing region is too low, and the controller partially closes the appropriate throttle valve. The controller 390 can also completely close the throttle valve, isolating the chamber volume 202.

[0058] The embodiment shown in Figure 8B has a first pressure gauge 352 located upstream of a first throttle valve 351 and a second pressure gauge 362 located upstream of a second throttle valve 361. In the embodiment shown in Figure 8B, a controller monitors the pressure in the exhaust line upstream of the throttle valves. Here, the pressure gauges are located on the process chamber side of the throttle valves. If the pressure in the exhaust line is too low, the pressure in the processing region is too low, and the controller causes the appropriate throttle valve to move toward a closed position. If the pressure in the exhaust line is too high, the pressure in the processing region is too high, and the controller causes the appropriate throttle valve to open further.

[0059] The pressure gauge employed can be any suitable pressure gauge. In some embodiments, the pressure gauge is an absolute pressure gauge referenced to a perfect vacuum or conditions outside the process chamber. In some embodiments, a differential pressure gauge is used. A differential pressure gauge measures the difference in pressure between two points.

[0060] In some embodiments, a pressure gauge is upstream of the controller, and the controller determines the difference in pressure measured by the second pressure gauge relative to the first pressure gauge. In one or more embodiments, the first pressure gauge is an absolute pressure gauge and the second pressure gauge is a differential pressure gauge that measures pressure relative to the pressure in the first exhaust system, as shown in FIG. 8C.

[0061] In one embodiment, the controller 390 adjusts the gas flow in the processing regions so that the absolute pressure difference between the first pressure region 321 and the second pressure region 322 is up to about 5 torr. In one embodiment, the controller 390 is configured to adjust the gas flow in one or more of the processing regions so that the difference between the pressures, whether differential or absolute, is no more than about 5 torr, 4 torr, 3 torr, or 2 torr.

[0062] 9 illustrates another embodiment of a processing chamber 200. The processing chamber 200 includes a first processing region 321 adjacent to a first process gas A port, a second processing region 322 adjacent to a second process gas B port, a third processing region 323 adjacent to a third process gas C port, and a fourth processing region 324 adjacent to a fourth process gas D port. While the processing regions are described as being adjacent to their respective gas ports, it will be understood that the processing regions exist between the gas delivery assembly and the susceptor assembly. Each of the at least one first processing region 321, at least one second processing region 322, at least one third processing region 323, and at least one fourth processing region 324 is separated by a gas curtain 325.

[0063] The third exhaust system 370 is in fluid communication with at least one third processing region 323. The third exhaust system 370 includes a third throttle valve 371 and a third pressure gauge 372. The fourth exhaust system 380 is in fluid communication with at least one fourth processing region 324. The fourth exhaust system 380 includes a fourth throttle valve 381 and a fourth pressure gauge 382.

[0064] A controller (not shown) communicates with the first exhaust system 350, the second exhaust system 360, the third exhaust system 370, and the fourth exhaust system 380 and controls the throttle valves 351, 361, 371, 381 in response to signals from the first pressure gauge 352, the second pressure gauge 362, the third pressure gauge 372, and the fourth pressure gauge 382.

[0065] In the embodiment shown in Figure 9, a first pressure gauge 352 is downstream of the first throttle valve 351, a second pressure gauge 362 is downstream of the second throttle valve 361, a third pressure gauge 372 is downstream of the third throttle valve 371, and a fourth pressure gauge 382 is downstream of the fourth throttle valve 381. In the embodiment shown in Figure 10, the first pressure gauge 352 is upstream of the first throttle valve 351, a second pressure gauge 362 is upstream of the second throttle valve 361, a third pressure gauge 372 is upstream of the third throttle valve 371, and a fourth pressure gauge 382 is upstream of the fourth throttle valve 381.

[0066] In some embodiments, each of the first pressure gauge 352, the second pressure gauge 362, the third pressure gauge 372, and the fourth pressure gauge 382 is an absolute pressure gauge. In one or more embodiments, the controller 390 determines a difference in pressure measured by one or more of the second pressure gauge 362, the third pressure gauge 372, or the fourth pressure gauge 382 relative to the first pressure gauge 352.

[0067] 11 illustrates another embodiment of the present disclosure, where a first pressure gauge 352 is an absolute pressure gauge located upstream of a first throttle valve 351, and a second pressure gauge 362, a third pressure gauge 372, and a fourth pressure gauge 382 are each differential pressure gauges that measure pressure differences relative to the first pressure gauge.

[0068] 12 illustrates another embodiment of the present disclosure. First pressure gauge 352 is an absolute pressure gauge located downstream of first throttle valve 351, and second pressure gauge 362 is an absolute pressure gauge located downstream of second throttle valve 361. Third pressure gauge 372 is a differential pressure gauge measuring the pressure difference relative to first pressure gauge 352. Fourth pressure gauge 382 is a differential pressure gauge measuring the pressure difference relative to second pressure gauge 362. This type of embodiment can be used when the first and third process gases are the same, and the second and fourth process gases are the same, but this is not necessarily the case.

[0069] In one embodiment, controller 390 controls all of the throttle valves for each of the processing regions and for the processing volume. In one embodiment, there are four different processing regions (i.e., four different processing states), and controller 390 maintains pressure in all four processing regions and the processing chamber volume such that each region is isolated from adjacent regions by a gas curtain.

[0070] The location of the pressure gauge can be changed to be before (upstream) or after (downstream) the throttle valve. In one embodiment, when the pressure gauge is before the throttle valve, it is placed as close to the processing area as possible.

[0071] The exposure to the first and second process conditions can be repeated in sequence to grow a film of a predetermined thickness. For example, a batch processing chamber can include two sections with the first process condition and two sections with the second process condition in an alternating pattern such that the substrate is rotated about a central axis of the processing chamber to sequentially and repeatedly expose the surface to the first and second process conditions, each exposure growing a film thickness (of deposition).

[0072] In some embodiments, one or more layers can be formed during a plasma-enhanced atomic layer deposition (PEALD) process. The use of plasma can provide sufficient energy to promote species to excited states where surface reactions are favorable and possible. The introduction of plasma into the process can be continuous or pulsed. In some embodiments, sequential pulses of precursors (or reactive gases) and plasma are used to process the layers. In some embodiments, reagents can be ionized either locally (i.e., within the processing region) or remotely (i.e., outside the processing region). In some embodiments, remote ionization can occur upstream of the deposition chamber so that ions or other energetic or luminescent species do not come into direct contact with the deposited film. In some PEALD processes, plasma is generated outside the processing chamber, such as by a remote plasma generator system. The plasma can be generated via any suitable plasma generation process or technique known to those skilled in the art. For example, the plasma can be generated by one or more microwave (MW) or radio frequency (RF) oscillators. The frequency of the plasma can be adjusted depending on the particular reactive species used. Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz, and 100 MHz. It should be noted that while a plasma may be used during the deposition processes disclosed herein, there are cases in which a plasma is not required. Indeed, other embodiments relate to deposition processes under very mild conditions without a plasma.

[0073] According to one or more embodiments, the substrate undergoes processing before and / or after forming a layer. This processing can occur in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is moved from a first chamber to a separate, second chamber for further processing. The substrate can be moved directly from the first chamber to another processing chamber, or the substrate can be moved from the first chamber to one or more transfer chambers and then to another predetermined processing chamber. Thus, the processing apparatus can include multiple chambers in communication with a transfer station. This type of apparatus can be referred to as a "cluster tool" or a "cluster system," among other terms.

[0074] Generally, a cluster tool is a modular system with multiple chambers that perform various functions, including substrate center measurement and orientation, degassing, annealing, deposition, and / or etching. According to one or more embodiments, a cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber may house a robot capable of transferring substrates back and forth between multiple processing chambers and multiple load lock chambers. The transfer chamber is typically maintained under vacuum and provides an intermediate stage for transferring substrates back and forth from one chamber to another and / or to a load lock chamber located at the front end of the cluster tool. Two well-known cluster tools that may be adapted for the present disclosure are the Centura® and Endura®, both available commercially from Applied Materials, Inc., Santa Clara, California. However, the exact arrangement and combination of chambers may be varied for the purposes of performing specific steps of the processes described herein. Other processing chambers that can be used include, but are not limited to, cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, chemical clean, thermal treatments such as RTP, plasma nitridation, degassing, alignment, hydroxylation, and other substrate processes. Performing processes in the chambers of a cluster tool can avoid surface contamination of the substrate from impurities in the air without oxidation before depositing the next film.

[0075] According to one or more embodiments, the substrate is continuously under vacuum or "load-lock" conditions and is not exposed to ambient air as it is transferred from one chamber to the next. The transfer chamber is thus under vacuum and "pumped down" under vacuum pressure. An inert gas may be present in the processing chamber or the transfer chamber. In some embodiments, an inert gas is used as a purge gas to remove some or all of the reactants after a layer is formed on the surface of the substrate. According to one or more embodiments, a purge gas is injected at the exit of the deposition chamber to prevent reactants from transferring from the deposition chamber to the transfer chamber and / or the processing chamber. In this way, a flow of inert gas creates a curtain at the exit of the chamber.

[0076] During processing, the substrate may be heated or cooled. Such heating or cooling can be achieved by any suitable means, including, but not limited to, changing the temperature of the substrate support (e.g., a susceptor) and flowing heated or cooled gas to the substrate surface. In certain embodiments, the substrate support includes a heater / cooler that can be controlled to conductively change the substrate temperature. In one or more embodiments, a gas (either a reactive gas or an inert gas) used is heated or cooled to locally change the substrate temperature. In certain embodiments, a heater / cooler is positioned adjacent to the substrate surface inside the chamber to change the substrate temperature by convection.

[0077] The substrate can be stationary or rotated during processing. A rotating substrate can be rotated continuously or in discrete steps. For example, the substrate can be rotated throughout the entire process, or the substrate can be rotated in small increments between exposures to various reactive or purge gases. Rotating the substrate (either continuously or in steps) during processing can help produce more uniform deposition or etching, for example, by minimizing the effects of local variability in gas flow geometry.

[0078] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is defined by the appended claims.

Claims

1. a first exhaust system in fluid communication with a first processing region of a processing chamber, the first exhaust system comprising a first throttle valve and a first pressure gauge, the first pressure gauge being downstream of the first throttle valve and configured to measure pressure downstream of the first throttle valve; a second exhaust system in fluid communication with a second processing region of the processing chamber, the second exhaust system including a second throttle valve and a second pressure gauge, the second pressure gauge being downstream of the second throttle valve and configured to measure pressure downstream of the second throttle valve; a controller in communication with the first exhaust system and the second exhaust system, the controller controlling the first throttle valve in response to a signal from the first pressure gauge and the second throttle valve in response to a signal from the second pressure gauge, the controller configured to ensure that an amount of gas delivered to each processing region is equal to an amount of gas removed from each processing region; Including, exhaust system.

2. 2. The exhaust system of claim 1, wherein the first pressure gauge and the second pressure gauge are absolute pressure gauges.

3. 2. The exhaust system of claim 1, wherein the first pressure gauge is an absolute pressure gauge and the second pressure gauge is a differential pressure gauge.

4. 10. The exhaust system of claim 1, wherein an absolute pressure difference between the first processing region and the second processing region is 5 torr or less.

5. 10. The exhaust system of claim 1, wherein the controller is further configured to maintain separation of gases in the first processing region and the second processing region.

6. 10. The exhaust system of claim 1, further comprising a chamber exhaust system in fluid communication with the processing chamber and a vacuum source, the chamber exhaust system comprising a chamber exhaust throttle valve downstream of the processing chamber and upstream of the vacuum source.

7. a third exhaust system in fluid communication with a third processing region of the processing chamber, the third exhaust system including a third throttle valve and a third pressure gauge, the third pressure gauge being downstream of the third throttle valve and configured to measure pressure downstream of the third throttle valve; a fourth exhaust system in fluid communication with a fourth processing region of the processing chamber, the fourth exhaust system including a fourth throttle valve and a fourth pressure gauge, the fourth pressure gauge being downstream of the fourth throttle valve and configured to measure pressure downstream of the fourth throttle valve; Further comprising: The controller is further in communication with the third exhaust system and the fourth exhaust system, and controls the third throttle valve in response to a signal from the third pressure gauge and controls the fourth throttle valve in response to a signal from the fourth pressure gauge.

10. The exhaust system of claim 1.

8. The exhaust system of claim 7 , wherein each of the first pressure gauge, the second pressure gauge, the third pressure gauge, and the fourth pressure gauge is an absolute pressure gauge.

9. 8. The exhaust system of claim 7, wherein the first pressure gauge is an absolute pressure gauge, the second pressure gauge is a differential pressure gauge that measures a pressure difference relative to the first pressure gauge, the third pressure gauge is an absolute pressure gauge, and the fourth pressure gauge is a differential pressure gauge that measures a pressure difference relative to the third pressure gauge.

10. The exhaust system of claim 7 , wherein the third pressure gauge and the fourth pressure gauge are differential pressure systems that measure pressure differences relative to the first pressure gauge.

11. The exhaust system of claim 7 , wherein the controller is further configured to maintain separation of gases in the third processing region and the fourth processing region.

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