Ampoules for precursors for semiconductor manufacturing

Abstract

An ampoule for semiconductor manufacturing precursors and its method of use are described. The ampoule includes a container with an inlet port and an outlet port. Alternating first and second elongated walls within the container are arranged to define longitudinal flow channels containing the precursor material, and alternating first and second passages between each of the longitudinal flow channels allow fluid communication between adjacent longitudinal flow channels, where the first passages are located at the bottom of the precursor cavity and the second passages are located at the top of the cavity. A flow path is defined by the longitudinal flow channels and the passages through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.

Description

[Technical Field]

[0001] The present disclosure relates generally to ampoules for precursors for semiconductor manufacturing and methods of using precursors for semiconductor manufacturing. In particular, the present disclosure relates to ampoules and methods for providing a tortuous flow path for precursor materials, such as solid precursor materials. [Background technology]

[0002] The semiconductor industry uses an increasing variety of chemicals for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes, provided in liquid or solid form. The precursors are typically contained in sealed containers or ampoules with a single inlet and a single outlet.

[0003] Solid chemical precursors are transported (i.e., fed) from a container (ampule) to a reactor for deposition / etching processes. Solid materials typically have low vapor pressures, which preclude the use of mass flow controllers and other delivery mechanisms, and require a carrier gas to move the material from the ampoule. Low vapor pressure precursors often use a carrier gas to transport the evaporated or sublimated precursor from the ampoule to the process reactor. However, with standard ampoule designs, the carrier gas typically does not become saturated with the volatilized or sublimated material. These unsaturated carrier flows have traditionally been enhanced using two methods: using high-velocity jets to reduce the size of the slowly diffusing boundary layer, or flowing the gas over a tray filled with solids to increase the residence time between the gas and the solid.

[0004] The reaction rate at the wafer depends on the gas phase concentration, and therefore, increasing the transport rate is desirable to improve process conditions.

[0005] Generally, there is a need in the art for an ampoule with suitable flow paths that saturates or nearly saturates the carrier gas with precursor and provides a consistent delivery of precursor, as well as methods for making and using the same. There is also a continuing need for improved process conditions. In particular, there is a need for improved precursor delivery for on-wafer, high aspect ratio structures, where conformal processes rely on high precursor concentrations. Summary of the Invention

[0006] One or more embodiments are directed to an ampoule for semiconductor manufacturing precursors. The ampoule includes a container defining a cavity configured to hold a precursor. Both an inlet port and an outlet port are fluidly connected to the cavity. Alternating first and second elongated walls are arranged to define a series of longitudinal flow channels containing the precursor material, and alternating first and second passages between each of the longitudinal flow channels allow fluid communication between adjacent longitudinal flow channels, with the first passages located at the bottom of the precursor cavity and the second passages located at the top of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material.

[0007] An additional embodiment of the present disclosure is directed to an ampoule for dispensing a vapor mixture of carrier gas and precursor used in semiconductor manufacturing. The ampoule comprises a container having a bottom wall, side walls, and a lid, the container defining a cavity configured to hold a precursor, such that the cavity height (H) extends from the lower surface of the lid to the upper surface of the bottom wall. A single inlet port and a single outlet port are both fluidly connected to the cavity. The ampoule includes alternating first and second elongated walls arranged to define a series of longitudinal flow channels containing precursor material, and alternating first and second passages between each of the longitudinal flow channels that enable fluid communication between adjacent longitudinal flow channels, the first passages being located at the bottom of the precursor cavity and the second passages being located at the top of the precursor cavity, and the first passages not overlapping any of the second passages. A serpentine flow path is defined by the longitudinal flow channels and the passages, through which the carrier gas flows in contact with the precursor material.

[0008] A further embodiment of the present disclosure is directed to a method for providing a precursor flow. A carrier gas flows through an inlet port of an ampoule containing precursor material therein. The flow of carrier gas contacting the precursor material within the ampoule is directed through a series of longitudinal flow channels defined by alternating first and second elongated walls and alternating first and second passages between each of the longitudinal flow channels that allow fluid communication between adjacent longitudinal flow channels, through which the carrier gas flows in contact with the precursor material, the first passages being located at the bottom of the precursor cavity and the second elongated passages being located at the top of the cavity. The carrier gas and precursor exit the ampoule through an outlet port.

[0009] So that the above-mentioned features of the present invention may be understood in detail, a more particular description of the invention briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the invention and therefore should not be considered as limiting its scope, since the invention may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional view of an ampoule and associated manifold having an "outside-to-outside flow" configuration according to one embodiment. [Figure 2] 2 is an excerpted cross-sectional view of the container only along line ZZ' of FIG. 1 according to one or more embodiments. [Figure 3] FIG. 1 is a schematic cross-sectional view of an ampoule containing a solid precursor material according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0011] In the accompanying drawings, similar components and / or features may have the same reference numeral. Furthermore, various components of the same type may be distinguished by following the reference numeral with a dash and a second numeral that distinguishes between the similar components. When only a first reference numeral is used herein, the description is applicable to any one of the similar components having the same first reference numeral, regardless of the second reference numeral. The hatching of components in the figures is intended to aid in visualization of the various parts and does not necessarily indicate various components.

[0012] Before describing several exemplary embodiments of the invention, it is to be understood that the invention is not limited to the details of construction or process steps set forth in the following description as the invention is capable of other embodiments and of being practiced or carried out in various ways.

[0013] As new materials for semiconductor processing are researched, there is an increasing demand for new chemical precursors, many of which have low volatility and are often solids. Precursors with low vapor pressure, such as solids, are prone to poor conformality on high-surface-area 3D structures due to low vapor concentration. While increasing the concentration can usually be achieved by increasing the temperature of the ampoule, many precursors have maximum temperature limitations due to thermal decomposition.

[0014] The transport of low vapor pressure precursors, e.g., solid materials, into the feed stream of a process reactor depends on the residence time between the carrier gas and the solid. A saturated feed stream promotes process stability, and the higher the concentration, the better the reaction at the wafer surface. For example, ampoules designed with vertical walls or baffles, such as longitudinally extending structures within the ampoules, force the carrier gas through the void spaces of the granular or pelletized solids, promoting turbulence, mixing, and diffusion as the carrier gas travels a tortuous path through the ampoules' channels defined by the baffles. Advantageously, the designs herein promote the breakdown of the gas / solid interface by forcing the gas through the granular solid bed to maximize residence time. Advantageously, the designs herein also promote easy refilling. Some embodiments of the present disclosure advantageously provide a tortuous flow path for the carrier gas from the ampoules' inlet to outlet for precursor delivery.

[0015] A flow path having a tortuous path (i.e., a flow path including changes in flow direction) allows the carrier gas sufficient residence time to become partially to nearly fully saturated with vaporized and / or sublimated and / or entrapped precursor, with "saturated" as used herein contemplating various degrees of saturation.

[0016] Low vapor pressure precursors are understood to refer to materials that do not readily evaporate under atmospheric conditions. Low vapor pressure precursors typically have a vapor pressure of less than 10 Torr, more commonly less than 1 Torr. In some applications, a carrier gas is used to deliver the low vapor pressure material from an ampoule to a reactor. Low vapor pressure materials typically require heat to increase their vapor pressure. "Metal chlorides" and / or "organometallic precursors" are examples of such low pressure materials.

[0017] In one or more embodiments, the design is for ampoule volumes ranging from 1.2 L to 4 L, and all values ​​and subranges therebetween.

[0018] Additional advantages of the ampoules herein include the ability to increase the concentration of solid material without significantly affecting the geometry of standard ampoules. Higher concentrations can be used to widen the process window and improve deposition / etch performance for high-aspect-ratio structures. Furthermore, these designs allow for high-volume precursor delivery. Additionally, the open-top lid design allows for easy addition of granular solids, which is typically not possible with powdered or sintered solids. Unlike cross-flow ampoules, where the carrier gas follows the path of least resistance, the designs herein force the carrier gas through a tortuous path, changing direction throughout the ampoules. The carrier gas permeates through the void spaces between the solid pellets, vaporizing material from all surfaces. Forcing the gas through the solid precursor bed disrupts the slow-diffusing stagnant layer, extending the residence time of the carrier gas within the ampoules and increasing the delivered concentration.

[0019] In one or more embodiments, the solid chemical precursor is preferentially sieved to obtain and / or form larger granules or pellets, which are then packed into an ampoule, e.g., a steel ampoule. A carrier gas is forced through the bed of granules or pellets. Material evaporated from the solid surface is entrained by the carrier gas flow and carried out of the ampoule and into the process reactor. The resulting concentration of the carrier gas will depend on the residence time throughout the solid, the size of the boundary layer surrounding the granules, and the surface area with which the gas interacts.

[0020] Walls and / or baffles are inserted into the ampoule to direct flow through the granule bed and the headspace of the container. Additional baffles can be added to increase the number of subcompartments where diffusion and headspace mixing occur, increasing saturation as the gas passes toward the ampoule outlet. In one or more embodiments, the walls and / or baffles isolate each subcompartment using sealing O-rings to direct gas flow. Walls and passages are used to direct flow. In one or more embodiments, walls are disposed within the container to form flow channels, and wallless passages allow fluid communication between the flow channels. In one or more embodiments, the baffle includes both walls and passages. For example, the baffle can comprise a baffle wall, which is an impermeable body of material such as steel, and one or more openings defined therein to direct the gas flow. The passages and walls, and similarly the holes in the baffle wall, are positioned to force flow alternately toward the bottom end of the ampoule and then toward the top end of the ampoule until it reaches the ampoule's outlet port.

[0021] Generally, the ampoule includes a container defining a precursor cavity configured to hold precursor material; and an inlet port and an outlet port in fluid communication with the precursor cavity. Alternating first and second elongated baffles are arranged to define a series of longitudinal flow channels containing the precursor material, with alternating first and second passages between each of the longitudinal flow channels allowing fluid communication between adjacent longitudinal flow channels, where the first passages are located at the bottom of the precursor cavity and the second passages are located at the top of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material.

[0022] In one or more embodiments, the ampoule comprises a container having a bottom wall, side walls, and a lid, the container defining a precursor cavity configured to hold a solid precursor, such that the precursor cavity has a height (H) extending from the bottom surface of the lid to the top surface of the bottom wall; and a single inlet port and a single outlet port in fluid communication with the precursor cavity. Alternating first and second elongated walls are arranged to define a series of longitudinal flow channels containing the precursor material, and alternating first and second passages between each of the longitudinal flow channels allow fluid communication between adjacent longitudinal flow channels, where the first passages are located at the bottom of the precursor cavity and the second passages are located at the top of the precursor cavity, and the first passages do not overlap any of the second passages. A serpentine flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material.

[0023] In one or more embodiments, the flow path proceeds from a first outer channel communicating with an inlet port to a second outer channel communicating with an outlet port, which may be referred to as an "outside-to-outside flow" configuration. In one or more embodiments, the flow path proceeds from an inner channel communicating with an inlet port to one or more outer channels communicating with an outlet port, which may be referred to as an "inside-to-outside flow" configuration.

[0024] The vessel can have any suitable shape to suit the solid precursor, walls and / or baffles, and process application, hi one or more embodiments, the shape of the vessel is selected from a cylinder, a rectangular prism, a rectangular parallelepiped, and a cube.

[0025] Generally, the flow paths provided herein force a carrier gas through elongated baffles with non-overlapping openings in an alternating flow toward the bottom and top of the ampoule. A first elongated wall and a second elongated wall define longitudinal flow channels, each containing a volume of solid precursor. The gas flow changes direction from flow channel to flow channel until it reaches the last flow channel that communicates with the outlet port. This change in direction also promotes mixing of the evaporated and / or sublimated precursor with the carrier gas. Passages and / or openings in the baffles allow the carrier gas to flow to the next flow channel. References to gas flow herein include carrier gas alone or in combination with entrained and / or evaporated and / or sublimated precursor.

[0026] 1 shows a cross-sectional view of an ampoule and associated manifold having an "outside-to-out flow" configuration according to one embodiment. Ampoule 100 and manifold 102 are suitable for use with semiconductor manufacturing raw materials, including reagents and precursors. The term "precursor" is used to describe the contents of ampoule 100 and refers to any reagent that flows into the process environment.

[0027] The ampoule 100 includes a vessel 110 with a bottom wall 112, a sidewall 114, and a lid 116. An inlet port 120 and an outlet port 130 are fluidly connected to a precursor cavity defined by the interior walls of the vessel 110. In one or more embodiments, the ampoule 100 includes a single inlet port 120 and a single outlet port 130. The inlet port 120 is generally configured to be connectable to a gas source "G" via appropriate piping and valve(s) and may have a suitable threaded or sealed connection. In one or more embodiments, the gas source "G" is a carrier gas. In one or more embodiments, the carrier gas is inert. The outlet port 130 is also fluidly connected to the cavity. The outlet port 130 is generally configured to be connectable to a line including appropriate piping and valve(s) to allow gas flow (which may include entrained particles) out of the vessel 110 and into a processing chamber (or other component) "P." The outlet port 130 may have a welded or threaded connection to allow a gas line to be connected.

[0028] In one or more embodiments, the ampoule includes a single inlet and a single outlet. While the embodiment of Figure 1 shows one inlet and one outlet port, there may be multiple inlet and outlet ports as needed for a particular application. The locations of the inlet and outlet ports may be interchanged to accommodate other designs.

[0029] In one or more embodiments, the inlet port 120, the outlet port 130, or both the inlet port 120 and the outlet port 130 extend through the lid 116. In one or more embodiments, the inlet port 120, the outlet port 130, or both the inlet port 120 and the outlet port 130 extend through the side wall 114. In one or more embodiments, the inlet port 120 extends through the lid 116 and the outlet port 130 extends through the side wall 114. In one or more embodiments, the inlet port 120 extends through the side wall 114 and the outlet port 130 extends through the lid 116.

[0030] The height (H) of the cavity defined by the container 110 extends from the lower surface of the lid 116 to the upper surface of the bottom wall 112. The cavity 118 has a centerline 164 located at the midpoint of the height "H".

[0031] Inlet port 120 extends through lid 116, with the inlet port 120 having a passageway 121 with an inner diameter that defines a cross-sectional width of the passageway 121. Passageway 121 directs a volume of carrier gas entering from source "G" into precursor cavity 118, shown generally as 118. In one or more embodiments, a solid precursor is disposed within precursor cavity 118. In one or more embodiments, the solid precursor is in the form of granules or pellets.

[0032] The inlet port 130 extends through the lid 116, with the outlet port 130 having a passageway 131 with an inner diameter that defines the cross-sectional width of the passageway 131. The passageway 131 conducts a volume of the exiting entrained and / or saturated carrier gas from the ampoule downstream to the process chamber "P."

[0033] With particular reference to this embodiment, within cavity 118 are a plurality of longitudinal flow channels 124a-124d defined by a plurality of elongated baffles 126a-126c, each of which includes one or more openings (not shown in this view).

[0034] Inlet port 120 (and its passage 121) is in fluid communication with first outer channel 124a, and outlet port 130 (and its passage 131) is in fluid communication with second outer channel 124d. Channels 124b and 124c are inner channels.

[0035] In some embodiments, as shown in FIG. 1 , the lid 116 is a separate component from the bottom wall 112 and the side wall 114. The lid 116 can be connected to the side wall 114 of the container 110 using removable bolts through appropriately shaped openings, and may have threaded portions to facilitate connection of threaded bolts. The bolts can be removed to remove the lid 116 from the container 110 so that the precursor 150 in the container 110 can be changed or added. A first seal 152 is disposed between the upper surface of the side wall 114 and the lower surface of the lid 116 and forms a liquid-tight seal. In one or more embodiments, the first seal 152 is an O-ring. In one or more embodiments, the first seal 152 is a metal gasket.

[0036] The lid may further include one or more exterior features for reciprocating movement with an external heater. The bottom wall may be configured for reciprocating movement with an external heater. One or more jacket heaters may be provided around the sidewalls.

[0037] A plurality of elongated baffles 126a-126c at the bottom edge or rim reside on or fit within the upper surface of the bottom wall 112. In this embodiment, respective seals 127a-127c, e.g., O-rings, provide fluid-tight separation around the periphery of each baffle and around the bottom surface of the bottom wall 112, side walls 114, and lid 116. In this manner, flow is forced through openings in the baffles between longitudinal flow channels. In one or more embodiments, the elongated baffles are effective in conducting heat from one or more external sources.

[0038] The elongated baffles 126a-126c may be positioned, secured, or otherwise attached within the vessel 110 by any suitable technique. In one or more embodiments, the elongated baffles 126a-126c are fastened to the interior surface of the vessel independently of one another with fasteners.

[0039] Depending on the design, a second seal is optionally disposed between the top of bottom wall 112 and the underside of side wall 114 to form a fluid-tight seal. In some embodiments, first seal 152 and second seal are independently O-rings or metal gaskets.

[0040] In some embodiments (not shown), the lid 116 may be integrally formed with the sidewalls 114 and bottom wall 112 of the container 110 .

[0041] Different manifold configurations can be connected to the lid 116 to allow the ampoule 100 to be added to the processing chamber. In some embodiments, an inlet line 170 is connected to the inlet port 120. An inlet valve 172 can be located on the inlet line 170 between the gas source "G" and the inlet port 120. The inlet valve 172 can be integrally formed with the lid 116 or can be connected to the lid 116 as a separate component. An outlet line 180 can be connected to the outlet port 130. In some embodiments, the outlet line 180 includes an outlet valve 182 located between the outlet port 130 and the processing chamber "P." The inlet valve 172 and the outlet valve 182 can be used to isolate the ampoule 100 such that the contents of the cavity 118 are isolated from the environment outside the container 110. In some embodiments, there are multiple valves along and / or between (e.g., 190) the inlet line 170 (e.g., 174) and / or the outlet line 180 (e.g., 184). The valve may be a manual valve or a pneumatic valve.

[0042] Next, FIG. 2 is a cross-sectional view of only the container 110 taken along line Z-Z' in FIG. 1. Baffle 126b includes multiple openings 128b (e.g., one or more) in baffle wall 129b. Baffle 126b forms a longitudinal flow channel. Seals 127b, such as O-rings, are present between baffle wall 129b and lid 116, side wall 114, and bottom wall 112. Openings 128b in baffle wall 129b are offset from the openings of adjacent baffles so that openings in a first configuration of baffles do not overlap with openings in a second configuration of baffles, preventing bypass of the flow channel. The baffles can be secured, e.g., welded, to the interior surface of the container. The baffles can be configured with holes to accommodate fasteners, e.g., bolts, for securing adjacent baffles together during ampoule assembly.

[0043] The openings are shaped and sized based on the desired application. In one or more embodiments, the openings are circular. In one or more embodiments, the baffle walls have between 1 and 10 openings. In one or more embodiments, the openings are multiple holes on each baffle wall, spaced along the width of each wall. In one or more embodiments, the openings span the axial width of the baffle wall. In one or more embodiments, the openings span the axial width of the baffle wall from less than 100% to greater than or equal to 1%, and all values ​​and subranges therebetween.

[0044] Baffle 126b includes a first configuration that positions one or more openings 128b in a lower portion of baffle wall 129b, i.e., with respect to the longitudinal centerline 164 of baffle 126b, openings 128b are at or below the midpoint and closer to bottom wall 112. In one or more embodiments, the openings in a baffle in the first configuration are located within the bottom 25%, or 20%, or 15%, or 10%, or 5%, or 1% of the longitudinal distance of the baffle from the top surface of bottom wall 112.

[0045] A second configuration of baffles adjacent to the first configuration of baffles will have one or more openings located in the upper portion of the baffle wall (not shown in FIG. 2). That is, with respect to the longitudinal centerline of the second baffle (e.g., 126a and 126c in FIG. 1), respective openings 128a and 128c will be at or above the centerline and closer to the lid 116. In one or more embodiments, the openings in the second configuration of baffles are located within the top 25%, or 20%, or 15%, or 10%, or 5%, or 1% of the baffle's longitudinal distance from the bottom surface of the lid 116.

[0046] The openings of the first and second configurations are offset such that if the opening of one configuration is located on the centerline, the opening of the other configuration will not be located on the centerline.

[0047] 3 shows a schematic cross-sectional view of ampoule 200 containing solid precursor material 250, according to one or more embodiments. Solid precursor material 250 resides in a bed, with void spaces 256 present between granules or pellets of solid precursor material 250. The flow path of carrier gas "G" through longitudinal flow channels 224a, 224b, 224c, 224d, 224e, 224f, 224g, 224h is indicated by arrows A, B, C, D, E, F, and G. In this embodiment, there are four elongated walls 226a, 226c, 226e, 226g in a first configuration, which are attached directly or indirectly to lid 216, and a series of respective first passages 228a, 228c, 228e, and 228g below centerline 264 of cavity 218. First passages 228a, 228c, 228e, and 228g are defined by the ends of respective elongated walls 226a, 226c, 226e, and 226g and respective portions of the upper surface of bottom wall 212. Also in this embodiment, there is a second configuration of three elongated walls 226b, 226d, and 226f that are directly or indirectly attached to bottom wall 212, and a series of respective second passages 228b, 228d, and 228f that are above centerline 264 of cavity 218, which centerline 264 is located at the midpoint of the height of the cavity defined by the lower surface of lid 216 and the upper surface of bottom wall 212. Second passages 228b, 228d, and 228f are defined by the ends of respective elongated walls 226b, 226d, 226f and respective portions of the bottom surface of lid wall 216. The first passages are offset from the second passages of adjacent flow channels so that they do not overlap and flow channels are not bypassed.

[0048] Walls 226a-226g may be positioned, secured, or otherwise attached within container 210 by any suitable technique. In one or more embodiments, walls 226a-226g are independently welded to the interior surface of the container.

[0049] Gas flow "G" enters first outer channel 224a from inlet port 220 and its passageway 221 toward bottom wall 212. First outer channel 224a is defined by a first inner surface of side wall 114s1 and the surface of wall 226a. Arrow "A" indicates flow through opening 228a in wall 226a into inner channel 224b toward lid 216. Arrow "B" indicates flow through opening 228b in wall 226b into inner channel 224c toward bottom wall 212. Arrow "C" indicates flow through opening 228c in wall 226c into inner channel 224d toward lid 216. Arrow "D" indicates flow through opening 228d in wall 226d into inner channel 224e toward bottom wall 212. Arrow "E" indicates flow through opening 228e in wall 226e into inner channel 224f toward lid 216. Arrow "F" indicates flow through opening 228f in wall 226f into inner channel 224g toward bottom wall 212. Arrow "G" indicates flow through opening 228g in wall 226g into second outer channel 224h toward outlet port 230 and its passageway 231. Second outer channel 224h is defined by the second inner surface of side wall 114s2 and the surface of wall 226g.

[0050] In one or more embodiments, the ampoule includes a single inlet and a single outlet. While the embodiment of Figure 3 shows one inlet and one outlet port, there may be multiple inlet and outlet ports as needed for a particular application. The locations of the inlet and outlet ports may be interchanged to accommodate other designs.

[0051] In one or more embodiments, the inlet port 220, the outlet port 230, or both the inlet port 220 and the outlet port 230 extend through the lid 216. In one or more embodiments, the inlet port 220, the outlet port 230, or both the inlet port 220 and the outlet port 230 extend through the sidewall 214. In one or more embodiments, the inlet port 220 extends through the lid 216 and the outlet port 230 extends through the sidewall 214. In one or more embodiments, the inlet port 220 extends through the sidewall 214 and the outlet port 230 extends through the lid 216.

[0052] In one or more embodiments, the relative positions of the baffles can be adjusted as needed, hi one or more embodiments, the axial distance between the walls varies.

[0053] In the flow channels, the carrier gas traveling through the void space 256 contacts the solid precursor 250, thereby entraining and / or vaporizing the precursor as the carrier gas passes over the surface of the precursor volume. While within each flow channel, the carrier gas continues to contact and saturate the precursor 250.

[0054] Thus, the flow channels 224a-224h include a plurality of serpentine paths (224a-224g) and an exit path (224h).

[0055] According to one or more embodiments, when an ampoule contains a minimum amount of precursor, the carrier gas is expected to be fully saturated over the flow path distance, although this may depend on the particular precursor in the ampoule and its physical properties. The degree of saturation is not expected to decrease as the amount of precursor level in the ampoule decreases during use.

[0056] It is understood that the presence of eight flow channels in FIG. 3 is not limiting and the number of channels can be selected based on space constraints and / or precursor properties and / or design needs.

[0057] In some embodiments, the gas flow through the inlet port 220 and along the flow path is sufficient to entrap and / or vaporize and / or sublimate the precursor without the need for bubbling. The gas flow rate can be adjusted during processing as the precursor 250 level decreases to maintain sufficient contact. The gas flow in some embodiments has a maximum velocity sufficient to prevent condensation of the precursor 250 at the outlet port 230 in combination with a heat source.

[0058] Thermocouples, mass flow meters, and pressure gauges can be included in the equipment shown herein to monitor process conditions. In one or more embodiments, a mass flow meter is provided to monitor gas flow into the inlet port. In one or more embodiments, a thermocouple is attached to the lid. In one or more embodiments, a pressure gauge is provided in the inlet and / or outlet lines. The pressure range within the ampoule according to some embodiments is from 25 torr to 150 torr.

[0059] References throughout this specification to "one embodiment," "a particular embodiment," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrases "one or more embodiments," "a particular embodiment," "one embodiment," or "an embodiment" in various places throughout this specification do not necessarily refer to the same embodiment of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0060] Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made in the method and apparatus of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover such modifications and variations provided they come within the scope of the appended claims and their equivalents.

Claims

1. 1. An ampoule for precursor material for semiconductor manufacturing, comprising: a container defining a precursor cavity configured to hold the precursor material, the container including a lid having a bottom surface, a bottom wall having an upper surface, and a sidewall, the bottom surface of the lid, an upper surface of the bottom wall, and the sidewall defining the precursor cavity; an inlet port and an outlet port in fluid communication with the precursor cavity; alternating first and second elongated baffles extending from a bottom surface of the lid to an upper surface of the bottom wall and arranged to define a series of longitudinal flow channels containing the precursor material; and alternating first and second passages between each of the longitudinal flow channels allowing fluid communication between adjacent longitudinal flow channels, wherein the first passages include one or more first openings located at the bottom of the first elongated baffles and the second passages include one or more second openings located at the top of the second elongated baffles, and the first and second passages are offset from one another; a flow path defined by the longitudinal flow channel and the first and second passages, wherein a carrier gas flows in contact with the precursor material; and a seal that provides a fluid-tight separation between the first elongated baffle and the second elongated baffle and forces flow through the first passage and the second passage; The ampoule is provided with:

2. 2. The ampoule of claim 1, wherein the bottom surface of the lid contacts the sidewall of the container.

3. 3. The ampoule of claim 2, wherein the lid is a separate component from the bottom wall and the side wall.

4. 10. The ampoule of claim 1, wherein the flow path is tortuous.

5. 2. The ampoule of claim 1, wherein the seal comprises an O-ring positioned around each first elongated baffle and each second elongated baffle.

6. 10. The ampoule of claim 1, comprising in the range of 1 to 10 first elongated baffles and in the range of 1 to 10 second elongated baffles.

7. 10. The ampoule of claim 1, wherein a solid precursor in the form of granules or pellets defining void spaces between the granules or pellets is disposed within the precursor cavity to provide a precursor level.

8. 8. The ampoule of claim 7, wherein the ampoule has a single inlet and a single outlet, the single inlet being above the precursor level.

9. 10. The ampoule of claim 1, wherein each of the first elongated baffles comprises a total of 1 to 10 openings, and each of the second elongated baffles independently comprises a total of 1 to 10 openings.

10. 1. An ampoule for dispensing a vapor mixture of a carrier gas and a precursor material used in semiconductor manufacturing, comprising: a container having a bottom wall having a top surface, a sidewall, and a lid having a bottom surface, the container defining a precursor cavity configured to hold a solid precursor, the precursor cavity having a height (H) extending from a bottom surface of the lid to an upper surface of the bottom wall; a single inlet port and a single outlet port in fluid communication with said precursor cavity; alternating first and second elongated baffles arranged to define a series of longitudinal flow channels containing the precursor material extending from an upper surface of the bottom wall to a bottom surface of the lid, and alternating first and second passages between each of the longitudinal flow channels allowing fluid communication between adjacent longitudinal flow channels, wherein the first passages are openings located at the bottom of the first elongated baffles and the second passages are openings located at the top of the second elongated baffles, and the first passages are offset from the second passages; a serpentine flow path defined by the longitudinal flow channel and the first and second passages, wherein a carrier gas flows in contact with the precursor material; and a seal that provides a fluid-tight separation between the first elongated baffle and the second elongated baffle and forces flow through the first passage and the second passage; The ampoule is provided with:

11. 11. The ampoule of claim 10, wherein the lid is a separate component from the bottom wall and the side wall.

12. 11. The ampoule of claim 10, comprising in the range of 1 to 10 first elongated baffles and in the range of 1 to 10 second elongated baffles.

13. The ampoule of claim 10, wherein the seal includes an O-ring positioned around each first elongated baffle and each second elongated baffle.

14. 11. The ampoule of claim 10, wherein each of the first elongated baffles comprises a total of 1 to 10 openings, and each of the second elongated baffles independently comprises a total of 1 to 10 openings.

15. 11. The ampoule of claim 10, wherein the precursor material is a solid precursor in the form of granules or pellets defining void spaces between the granules or pellets, and the length of the tortuous channel is effective to saturate the carrier gas with the precursor material.

16. 1. A method of providing a precursor flow, comprising: flowing a carrier gas through an inlet port of an ampoule comprising a container defining a precursor cavity configured to hold a precursor material, the container including a lid having a bottom surface, a bottom wall having an upper surface, and a sidewall, the precursor cavity being defined by the bottom surface of the lid, an upper surface of the bottom wall, and the sidewall; directing a flow of the carrier gas contacting the precursor material within the ampoule through a series of longitudinal flow channels defined by alternating first and second elongated baffles extending from an upper surface of the bottom wall to a bottom surface of the lid and alternating first and second passages between each of the longitudinal flow channels allowing fluid communication between adjacent longitudinal flow channels, wherein the carrier gas flows in contact with the precursor material, the first passages include one or more first openings located at the bottom of the first elongated baffles, the second passages include one or more second openings located at the top of the second elongated baffles, and the first and second passages are offset from one another; flowing the carrier gas and precursor from the ampoule through an outlet port; Including, the ampoule further comprising a seal that provides a fluid-tight separation between the first elongated baffle and the second elongated baffle and forces flow through the first passage and the second passage.

17. 17. The method of claim 16, wherein a solid precursor in the form of granules or pellets defining void spaces between the granules or pellets is disposed in the precursor cavity to provide a precursor level.

18. The method of claim 16, wherein the length of the flow path is effective to saturate the carrier gas with the precursor material.

19. The method of claim 16, wherein the seal includes an O-ring positioned around each first elongated baffle and each second elongated baffle.

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