Processing method and processing system

Abstract

A method for processing a polymer substrate in which a first substrate and a second substrate are joined, the processing method including: forming a circumferential edge reforming layer along the boundary between a circumferential edge section of the first substrate that is to be removed and a central section of the first substrate; forming a non-joined region for lowering the joining strength between the first and second substrates at the circumferential edge section; forming a basis reforming layer, which serves as a basis for determining one formation position within the circumferential edge reforming layer or the non-joined region, on the surface of the first substrate that is not joined to the second substrate; and removing the circumferential edge section using the circumferential edge reforming layer as an origin point.

Description

[Technical Field]

[0001] The present disclosure relates to a processing method and a processing system.

[0002] Patent document 1 discloses a substrate processing system having a modified layer forming device that forms a modified layer inside a first substrate to be removed along the boundary between the peripheral and central portions of the first substrate in a laminated substrate formed by bonding a first substrate and a second substrate, and an edge removal device that removes the peripheral portion of the first substrate using the modified layer as a base point. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2019 / 176589 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure appropriately aligns the position of the laser beam irradiation portion with respect to the laser beam irradiation target position on the first substrate in a laminated substrate formed by bonding a first substrate and a second substrate. [Means for solving the problem]

[0005] One aspect of the present disclosure is a method for processing a composite substrate in which a first substrate and a second substrate are bonded, comprising: forming a peripheral modified layer along the boundary between the peripheral portion of the first substrate to be removed and the central portion of the first substrate; forming an unbonded region in the peripheral portion that weakens the bonding strength between the first substrate and the second substrate; forming a reference modified layer that serves as a reference for determining the formation position of either the peripheral modified layer or the unbonded region on the surface of the first substrate that is not bonded to the second substrate; and removing the peripheral portion using the peripheral modified layer as a base point. [Effects of the Invention]

[0006] According to the present disclosure, in a laminated substrate in which a first substrate and a second substrate are bonded together, it is possible to appropriately align the position of the laser light irradiation portion with the laser light irradiation target position on the first substrate. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a side view showing an example of the configuration of a stacked wafer processed in a wafer processing system. [Figure 2] 1 is a plan view showing the configuration of a wafer processing system according to an embodiment of the present invention. [Figure 3] FIG. 2 is a plan view showing the configuration of an interface reforming device and an internal reforming device. [Figure 4] FIG. 2 is a vertical cross-sectional view showing the configuration of an interface reforming device and an internal reforming device. [Figure 5] FIG. 1 is a flowchart showing main steps of wafer processing according to the present embodiment. [Figure 6] 1A to 1C are explanatory views showing main steps of wafer processing according to the present embodiment. [Figure 7] 1 is a cross-sectional view showing an unbonded region, a reference modified layer, a peripheral modified layer, and a divided modified layer formed on a first wafer. FIG. [Figure 8] 1A to 1C are explanatory views showing main steps of wafer processing according to the present embodiment. [Figure 9] FIG. 10 is an explanatory diagram showing the influence of wet etching on a device layer. [Figure 10] FIG. 10 is an explanatory view showing another example of removing the peripheral edge portion of the first wafer. [Figure 11] FIG. 10 is an explanatory view showing another example of removing the peripheral edge portion of the first wafer. [Figure 12] FIG. 10 is an explanatory view showing another example of removing the peripheral edge portion of the first wafer. [Figure 13] FIG. 10 is an explanatory view showing another example of removing the peripheral edge portion of the first wafer. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the manufacturing process of semiconductor devices, a first substrate (a silicon substrate such as a semiconductor) on the surface of which a plurality of devices such as electronic circuits are formed is bonded to a second substrate, and the first substrate In some cases, the peripheral portion of the substrate is removed, which is called edge trimming.

[0009] Edge trimming of a first substrate is performed using, for example, the substrate processing system disclosed in Patent Document 1. That is, a modified layer is formed by irradiating the inside of the first substrate with laser light (first laser light), and the peripheral portion of the first substrate is removed using the modified layer as a base point. Furthermore, according to the substrate processing system described in Patent Document 1, a modified surface is formed by irradiating the interface where the first substrate and the second substrate are bonded with laser light (second laser light), thereby reducing the bonding strength between the first substrate and the second substrate at the peripheral portion to be removed and appropriately removing the peripheral portion.

[0010] Incidentally, different types of laser light are generally selected for the first laser light and the second laser light, and therefore, the substrate processing system may be provided with a plurality of laser modules for independently irradiating the first laser light and the second laser light.

[0011] Typically, the laser beam irradiation position on the substrate to be irradiated is adjusted by detecting the edge of the substrate with a camera and controlling eccentricity (alignment). However, when multiple laser modules are used as described above, there is a risk of misalignment of the laser beam irradiation position between the laser modules. In such cases, there is a risk of misalignment between the formation position of the modified layer, which serves as the base point for peeling, and the formation position of the area with reduced bonding strength. As a result, there is a risk of the peripheral edge of the first substrate not being properly removed. Therefore, there is room for improvement in conventional edge trimming methods.

[0012] The technology disclosed herein has been made in consideration of the above circumstances, and in a laminated substrate in which a first substrate and a second substrate are bonded, the position of a laser beam irradiation portion is appropriately aligned with a laser beam irradiation target position on the first substrate. Hereinafter, a wafer processing system as a processing system and a wafer processing method as a processing method according to this embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] In a wafer processing system 1 according to this embodiment, which will be described later, processing is performed on a laminated wafer T, which is a laminated substrate formed by bonding a first wafer W as a first substrate and a second wafer S as a second substrate, as shown in Fig. 1. Hereinafter, the surface of the first wafer W that is bonded to the second wafer S will be referred to as the front surface Wa, and the surface opposite the front surface Wa will be referred to as the back surface Wb. Similarly, the surface of the second wafer S that is bonded to the first wafer W will be referred to as the front surface Sa, and the surface opposite the front surface Sa will be referred to as the back surface Sb.

[0014] The first wafer W is a semiconductor wafer such as a silicon substrate, and has a device layer Dw including a plurality of devices formed on its surface Wa. A bonding film Fw is further formed on the device layer Dw as a surface film, and the first wafer W is bonded to the second wafer S via the bonding film Fw. The bonding film Fw may be, for example, an oxide film (THOX film, SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive. The peripheral edge We of the first wafer W is chamfered, and the cross section of the peripheral edge We becomes thinner toward its tip. The peripheral edge We is a portion to be removed in the edge trimming process described below, and is, for example, a portion extending from 0.5 mm to 3 mm in the radial direction from the outer edge of the first wafer W.

[0015] The second wafer S has, for example, the same configuration as the first wafer W, and has a device layer Ds and a bonding film Fs as a surface film formed on the surface Sa, and the peripheral portion is chamfered. Note that the second wafer S does not need to be a device wafer on which the device layer Ds is formed, and may be, for example, a support wafer that supports the first wafer W. In such a case, the second wafer S functions as a protective material that protects the device layer Dw of the first wafer W.

[0016] 2, wafer processing system 1 has a configuration in which a load / unload station 2 and a processing station 3 are integrally connected. In load / unload station 2, for example, a cassette C capable of accommodating a plurality of overlapped wafers T is loaded and unloaded between the load / unload station 2 and the outside. Processing station 3 is equipped with various processing devices that perform desired processing on overlapped wafers T.

[0017] The carry-in / out station 2 is provided with a cassette mounting table 10 on which a plurality of, for example, three cassettes C are mounted. In addition, a wafer transfer device 20 is provided adjacent to the cassette mounting table 10 on the negative side of the X-axis of the cassette mounting table 10. The wafer transfer device 20 moves on a transfer path 21 extending in the Y-axis direction, and is configured to be able to transfer overlapped wafers T and the like between the cassette C on the cassette mounting table 10 and a transition device 30 described below.

[0018] In the loading / unloading station 2, a transition device 30 is provided adjacent to the wafer transport device 20 on the negative X-axis direction side of the wafer transport device 20, for transferring overlapped wafers T and the like between the processing station 3.

[0019] For example, three processing blocks B1 to B3 are provided in the processing station 3. The first processing block B1, the second processing block B2, and the third processing block B3 are arranged in this order from the positive side of the X axis (the loading / unloading station 2 side) to the negative side.

[0020] The first processing block B1 is provided with an etching device 40 that etches the ground surface of a first wafer W that has been ground by a processing device 80 (described later), a cleaning device 41 that cleans the first wafer W after etching by the etching device 40, and a wafer transfer device 50. The etching device 40 and the cleaning device 41 are arranged in a stacked configuration. Note that the number and arrangement of the etching devices 40 and the cleaning devices 41 are not limited to this.

[0021] The cleaning device 41 irradiates the first wafer W with a cleaning laser beam (e.g., a UV femtosecond laser) after the etching process by the etching device 40, thereby removing residues (deposits, etc.) remaining on the first wafer W. The cleaning device 41 also irradiates the bonding films Fw, Fs (hereinafter referred to as "residual films") remaining on the surface Sa of the second wafer S after the removal of the peripheral edge We with a cleaning laser beam, as will be described later, thereby removing the residual films by laser ablation. In other words, the bonding films Fw, Fs remaining after the removal of the peripheral edge We are removed to expose the surface Sa of the second wafer S, thereby completely removing the peripheral edge We of the first wafer W.

[0022] The wafer transfer device 50 is disposed on the negative side of the transition device 30 in the X-axis direction. The wafer transfer device 50 has, for example, two transfer arms 51, 51 that hold and transfer the overlapped wafer T. Each transfer arm 51 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. The wafer transfer device 50 is configured to be able to transfer the overlapped wafer T and the like to the transition device 30, the etching device 40, the cleaning device 41, the interface modification device 60 (described later), the internal modification device 61 (described later), and the separation device 62 (described later), i.e., to devices in the wafer processing system 1 other than the processing device 80 (described later).

[0023] The second processing block B2 is provided with an interface modification device 60 that forms an unbonded region Ae and a reference modified layer M1 (described later), an internal modification device 61 that forms a peripheral modified layer M2 and a divided modified layer M3 that serve as base points for peeling the first wafer W, a separation device 62 that removes the peripheral portion We of the first wafer W, and a wafer transfer device 70. The interface modification device 60, the internal modification device 61, and the separation device 62 are arranged in a stacked configuration. Note that the number and arrangement of the interface modification device 60, the internal modification device 61, and the separation device 62 are not limited to this. For example, instead of arranging the interface modification device 60, the internal modification device 61, and the separation device 62 in a stacked configuration, at least one of them may be arranged adjacent to each other in the horizontal direction.

[0024] The interface modification apparatus 60 irradiates, for example, the device layer Dw or the bonding film Fw formed on the first wafer W with interface laser light L1 (e.g., CO2 laser) to form an unbonded region Ae in which the bonding strength between the first wafer W and the second wafer S is reduced. The interface modification apparatus 60 also irradiates, for example, the back surface Wb of the first wafer W with interface laser light L1 to form a reference modified layer M1 that serves as a reference mark for alignment related to the formation of the peripheral modified layer M2 in the internal modification apparatus 61.

[0025] 3 and 4, the interface modification device 60 has a chuck 100 that holds the upper surface of the overlapped wafer T. The chuck 100 suction-holds the second wafer S on the side (back surface Sb) that is not bonded to the first wafer W.

[0026] The chuck 100 is supported by a slider table 102 via an air bearing 101. A rotation mechanism 103 is provided on the underside of the slider table 102. The rotation mechanism 103 incorporates, for example, a motor as a drive source. The chuck 100 is configured to be rotatable about the θ-axis (vertical axis) via the air bearing 101 by the rotation mechanism 103. The slider table 102 is configured to be movable along a rail 105 extending in the Y-axis direction by a horizontal movement mechanism 104 provided on the underside of the slider table 102. The rail 105 is provided on a base 106. The drive source of the horizontal movement mechanism 104 is not particularly limited, but a linear motor, for example, is used.

[0027] A laser irradiation system 110 is provided above the chuck 100. The laser irradiation system 110 has a laser head 111 and a lens 112. The lens 112 may be configured to be movable up and down by an elevator mechanism (not shown).

[0028] The laser head 111 has a laser oscillator (not shown) that oscillates a pulsed laser beam. That is, the laser beam irradiated from the laser irradiation system 110 onto the overlapped wafer T held on the chuck 100 is a so-called pulsed laser, and its power alternates between 0 (zero) and a maximum value. The laser head 111 may also have other devices besides the laser oscillator, such as an amplifier. The lens 112 is a cylindrical member, and irradiates the overlapped wafer T held by the chuck 100 with the interface laser light L1.

[0029] The laser head 111 is supported by a support member 113. The laser head 111 is configured to be able to move up and down by an elevating mechanism 115 along rails 114 extending in the vertical direction. The laser head 111 is also configured to be able to move in the Y-axis direction by a moving mechanism 116. The elevating mechanism 115 and the moving mechanism 116 are each supported by a support column 117.

[0030] A first imaging mechanism 120 is provided above the chuck 100 on the Y-axis positive side of the laser irradiation system 110. The first imaging mechanism 120 includes, for example, a macro camera with an imaging magnification of 2x, and has a numerical aperture capable of detecting at least the outer edge of the first wafer W, as will be described later. The first imaging mechanism 120 is configured to be able to move up and down freely by an elevator mechanism 121, and is further configured to be able to move freely in the Y-axis direction by a moving mechanism 122. The moving mechanism 122 is supported by a support column 117.

[0031] The first imaging mechanism 120 captures an image of the outer edge of the first wafer W (superimposed wafer T). The image captured by the first imaging mechanism 120 is used, for example, for alignment of the first wafer W, which will be described later, and for determining the irradiation position of the interface laser light, which will be described later (alignment of the laser irradiation system 110). The first imaging mechanism 120 includes, for example, a coaxial lens, and emits infrared light (IR), and further receives reflected light from an object.

[0032] 1, when the peripheral edge We of the first wafer W is chamfered (rounded), it is difficult to accurately detect the outer edge of the first wafer W using a camera with a high numerical aperture. However, in this embodiment, by using a macro camera with a low numerical aperture as the first imaging mechanism 120 that captures an image of the outer edge of the first wafer W (overlapping wafer T), the outer edge can be detected even when the peripheral edge We of the first wafer W is chamfered (rounded). However, the first imaging mechanism 120 may be provided with a micro camera (not shown) instead of or in addition to the macro camera, if a micro camera with a higher numerical aperture than the macro camera can be properly focused on the outer peripheral edge of the first wafer W due to factors such as the shape of the first wafer W. The imaging magnification of the micro camera is 10 times, the field of view is about 1 / 5 of that of the first imaging mechanism 120, and the pixel size is about 1 / 5 of that of the first imaging mechanism 120. The outer peripheral edge of the first wafer W is captured using the micro camera. ImagingIn this case, the alignment of the first wafer W and the determination of the irradiation position of the interface laser light can be performed with higher accuracy.

[0033] In the illustrated example, the chuck 100 is configured to be rotatable relative to the laser head 111 and movable horizontally by the rotation mechanism 103 and the horizontal movement mechanism 104, but the laser head 111 may be configured to be rotatable relative to the chuck 100 and movable horizontally. Alternatively, both the chuck 100 and the laser head 111 may be configured to be rotatable relative to each other and movable horizontally.

[0034] The internal modification device 61 irradiates the inside of the first wafer W with internal laser light L2 (for example, NIR light such as a YAG laser). The internal modification device 61 modifies the first wafer W at the focal point of the internal laser light L2 to form a peripheral modified layer M2 that serves as a base point for removing the peripheral portion We of the first wafer W, and divided modified layers M3 that serve as base points for dividing the peripheral portion We to be removed into small pieces.

[0035] The internal reforming device 61 has a configuration generally similar to that of the interface reforming device 60. That is, the internal reforming device 61 has a chuck 200 for holding the overlapped wafer T, a laser irradiation system 210, and a second imaging mechanism 220. The chuck 200 includes an air bearing 201, a slider table 202, a rotation mechanism 203, a horizontal movement mechanism 204, a rail 205, and a base 206, and is configured to be movable around the θ axis (vertical axis) and in the horizontal direction. The laser irradiation system 210 includes a laser head 211, a lens 212, a support member 213, rails 214, an elevating mechanism 215, and a moving mechanism 216. The elevating mechanism 215 and the moving mechanism 216 are each supported by a support column 217. The laser irradiation system 210 irradiates the overlapped wafer T held by the chuck 200 with an internal laser beam L2. The second imaging mechanism 220 is configured to be freely movable by an elevation mechanism 221 and a movement mechanism 222. The movement mechanism 222 is supported by a support column 217.

[0036] The second imaging mechanism 220 includes, for example, a micro camera with an imaging magnification of 10x. The second imaging mechanism 220 captures an image of the reference modified layer M1 formed on the back surface Wb of the first wafer W (polymerized wafer T). The image captured by the second imaging mechanism 220 is used, for example, to determine the irradiation position of the internal laser light L2 (alignment of the laser irradiation system 210), which will be described later. The second imaging mechanism 220 includes, for example, a coaxial lens, irradiates infrared light (IR), and further receives reflected light from the object.

[0037] In this embodiment, in order to image the reference modified layer M1 formed on the back surface Wb (flat surface) of the first wafer W instead of the outer edge of the rounded first wafer W, a micro camera with a high numerical aperture can be used as the second imaging mechanism 220. By using a micro camera as the second imaging mechanism 220 in this manner, it is possible to determine the irradiation position of the internal laser light L2 with higher accuracy compared to when the reference modified layer M1 is imaged with a macro camera with a low numerical aperture. However, the imaging mechanism provided in second imaging mechanism 220 is not limited to a micro camera, and a macro camera (not shown) may be provided instead of or in addition to the micro camera.

[0038] The separating device 62 removes at least the peripheral edge We of the first wafer W from the second wafer S, i.e., performs edge trimming, using the peripheral modified layer M2 formed in the internal modifying device 61 as a base point. Any method for edge trimming can be selected. In one example, the separating device 62 may insert, for example, a wedge-shaped blade. Alternatively, for example, an impact may be applied to the peripheral edge We by spraying air or a water jet toward the peripheral edge We.

[0039] The wafer transfer device 70 is disposed, for example, on the positive side of the Y-axis of the interface modification device 60 and the internal modification device 61. The wafer transfer device 70 has, for example, two transfer arms 71, 71 that adsorb and hold the overlapped wafer T using an adsorption / holding surface (not shown) and transfer it. Each transfer arm 71 is supported by an articulated arm member 72 and is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. The wafer transfer device 70 is configured to be able to transfer the overlapped wafer T and the like to the etching device 40, the cleaning device 41, the interface modification device 60, the internal modification device 61, the separation device 62, and a processing device 80 described later.

[0040] The third processing block B3 is provided with a processing device 80.

[0041] The processing device 80 has a rotary table 81. The rotary table 81 is configured to be rotatable around a vertical rotation center line 82 by a rotation mechanism (not shown). Two chucks 83 that suction-hold the overlapped wafer T are provided on the rotary table 81. The chucks 83 are evenly arranged on the same circumference as the rotary table 81. The two chucks 83 can be moved to a delivery position A0 and a processing position A1 by the rotation of the rotary table 81. Furthermore, each of the two chucks 83 is configured to be rotatable around a vertical axis by a rotation mechanism (not shown).

[0042] At the delivery position A0, the overlapped wafer T is delivered. At the processing position A1, a grinding unit 84 is disposed, which grinds the first wafer W while the second wafer S is held by suction with a chuck 83. The grinding unit 84 has a grinding section 85 equipped with a rotatable annular grinding wheel (not shown). The grinding section 85 is configured to be movable in the vertical direction along a support 86.

[0043] The wafer processing system 1 described above is provided with a control device 90. The control device 90 is, for example, a computer equipped with a CPU, a memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the overlapped wafer T in the wafer processing system 1. The program may be recorded on a computer-readable storage medium H and installed into the control device 90 from the storage medium H.

[0044] Next, a description will be given of wafer processing performed using the wafer processing system 1 configured as above. In this embodiment, the overlapped wafer T is formed in advance in a bonding device (not shown) outside the wafer processing system 1.

[0045] First, a cassette C containing a plurality of overlapping wafers T is placed on the cassette mounting table 10 of the carry-in / out station 2. Next, the overlapping wafers T are removed from the cassette C by the wafer transfer device 20 and transferred to the transition device 30. The overlapping wafers T transferred to the transition device 30 are then transferred to the interface modification device 60 by the wafer transfer device 50.

[0046] In the interface modification device 60, first, the overlapped wafer T held by the chuck 100 is moved to a first imaging position. The first imaging position is a position where the first imaging mechanism 120 can capture an image of the outer end (edge ​​portion) of the first wafer W. At the first imaging position, while the chuck 100 is being rotated, the first imaging mechanism 120 captures images of the outer end of the first wafer W in a 360-degree circumferential direction (step St1 in FIG. 5). The captured images are output from the first imaging mechanism 120 to the control device 90.

[0047] The control device 90 calculates the amount of eccentricity between the center of the chuck 100 and the center of the first wafer W from the image captured by the first imaging mechanism 120. Furthermore, the control device 90 calculates the amount of movement of the chuck 100 based on the calculated amount of eccentricity so as to correct the Y-axis component of the amount of eccentricity. The control device 90 moves the chuck 100 horizontally along the Y-axis direction based on the calculated amount of movement, thereby correcting the eccentricity between the center of the chuck 100 and the center of the first wafer W. The control device 90 also identifies the position of the outer edge of the first wafer W from the image captured by the first imaging mechanism 120. The control device 90 then sets an irradiation area of ​​the interface laser light L1 for forming the unbonded area Ae based on the identified position of the outer edge of the first wafer W. The irradiation area of ​​the interface laser light L1 is set, for example, as an annular area having a desired radial width d1 (see FIG. 6(a)) from the outer edge of the first wafer W.

[0048] After the eccentricity between the chuck 100 and the first wafer W is corrected and the irradiation area of ​​the interface laser light L1 is set, the chuck 100 and the laser head 111 are rotated relative to each other and moved relatively horizontally along the Y-axis direction, while the interface laser light L1 is irradiated in pulses onto the bonding interface between the first wafer W and the second wafer S in the irradiation area set in step St1 (step St2 in FIG. 5 ). This modifies the bonding interface between the first wafer W and the second wafer S (in the illustrated example, the interface between the first wafer W and the bonding film Fw). Note that in the embodiment, modification of the bonding interface includes, for example, amorphization of the bonding film Fw at the irradiation position of the interface laser light L1, delamination of the first wafer W and the second wafer S, and the like.

[0049] In the interface modification device 60, by modifying the irradiation position of the interface laser light L1 at the interface between the first wafer W and the second wafer S in this manner, an unbonded region Ae in which the bonding strength between the first wafer W and the second wafer S is reduced is formed, as shown in Figures 6(a) and 7. In the edge trimming described below, the peripheral edge We of the first wafer W, which is the target for removal, is removed, and the presence of the unbonded region Ae in which the bonding strength is reduced in this manner makes it possible to appropriately remove the peripheral edge We.

[0050] When the unbonded region Ae is formed, in the same interface modification device 60, the focal point position of the interface laser light L1 (the irradiation position of the interface laser light L1) is moved to the back surface Wb of the first wafer W. Then, while the chuck 100 and the laser head 111 are rotated relative to each other, the back surface Wb of the first wafer W is irradiated with the interface laser light L1 in pulses (step St3 in FIG. 5). As a result, the back surface Wb of the first wafer W is modified, as shown in FIGS. 6(b) and 7.

[0051] In the interface modification device 60, the back surface Wb of the first wafer W is irradiated with interface laser light L1 and modified in this manner, thereby forming a reference modified layer M1 that serves as a reference for alignment of the laser irradiation system 210 involved in forming the peripheral modified layer M2 described below. Note that the formation position of the reference modified layer M1 in the radial direction of the first wafer W is desirably set to a position slightly radially shifted from the radially inner end (hereinafter referred to as the "inner end") of the unbonded region Ae, preferably slightly radially outward from the inner end of the unbonded region Ae, as shown in Fig. 6(b), in order to appropriately irradiate the internal laser light L2 (described later) onto a target position inside the first wafer W. However, the formation position of the reference modified layer M1 may also be set to a position radially inward from the inner end of the unbonded region Ae on the back surface Wb of the first wafer W.

[0052] The overlapped wafer T on which the unbonded region Ae and the reference modified layer M1 have been formed is then transferred to the internal reforming device 61 by the wafer transfer device 70. In the internal reforming device 61, first, the overlapped wafer T held by the chuck 200 is moved to a second imaging position. The second imaging position is a position where the second imaging mechanism 220 can image the reference modified layer M1 formed on the first wafer W. At the second imaging position, while the chuck 200 is being rotated, the second imaging mechanism 220 captures images of the reference modified layer M1 over 360 degrees in the circumferential direction of the first wafer W (step St4 in FIG. 5). The captured images are output from the second imaging mechanism 220 to the control device 90.

[0053] The control device 90 calculates the amount of eccentricity between the center of the chuck 200 and the center of the first wafer W from the image captured by the second imaging mechanism 220. Furthermore, the control device 90 calculates the amount of movement of the chuck 200 based on the calculated amount of eccentricity so as to correct the Y-axis component of the amount of eccentricity. The control device 90 moves the chuck 200 horizontally along the Y-axis direction based on the calculated amount of movement, thereby correcting the eccentricity between the center of the chuck 200 and the center of the first wafer W. The control device 90 also identifies the formation position of the reference modified layer M1 from the image captured by the second imaging mechanism 220. Furthermore, the control device 90 sets the irradiation position (radial position) of the internal laser light L2 for forming the peripheral modified layer M2 based on the identified formation position of the reference modified layer M1. The irradiation position of the internal laser light L2 is set, for example, to a position moved a desired radial distance d2 (see FIG. 6(c)) from the formation position of the reference modified layer M1, specifically, to a position corresponding to the inner end of the unbonded region Ae.

[0054] After the eccentricity of the chuck 200 and the first wafer W is corrected and the irradiation position of the internal laser light L2 is set, the internal laser light L2 is irradiated onto the inside of the first wafer W as shown in FIGS. 6(c) and 7 to sequentially form a peripheral modified layer M2 and divided modified layers M3 (step St5 in FIG. 5). The peripheral modified layer M2 serves as a base point for removing the peripheral portion We in the edge trimming described below. The divided modified layer M3 serves as a base point for dividing the peripheral portion We into small pieces to be removed. In the drawings used in the following explanation, the divided modified layer M3 may be omitted to avoid complicating the illustration. The order in which the peripheral modified layer M2 and the divided modified layer M3 are formed is not particularly limited.

[0055] In the conventional internal modification device 61, the irradiation position of the internal laser light L2 (the formation position of the peripheral modified layer M2) was determined based on the outer edge of the first wafer W, as in step St1 described above. In this case, because the peripheral edge We of the first wafer W is chamfered as shown in FIG. 1 , an optical system with a low numerical aperture (NA) (e.g., a macro camera) must be used as the imaging mechanism, as described above. This may result in poor detection accuracy of the outer edge of the first wafer W. Furthermore, when the irradiation positions of both the interface laser light L1 and the internal laser light L2 are determined based on the outer edge of the first wafer W in this manner, there is a risk that the difference in detection accuracy between the interface modification device 60 and the internal modification device 61 will overlap, resulting in a significant deviation of the formation position of the peripheral modified layer M2 from the target position. Specifically, for example, if there is a deviation of about ±10 μm in the detection accuracy of each device, this deviation in accuracy may overlap, resulting in a deviation of up to about 20 μm. For this reason, there is a risk that the peripheral edge portion We may not be removed properly.

[0056] In this regard, according to the technology disclosed herein, the irradiation position of the internal laser light L2 is determined (alignment of the laser irradiation system 210) using the reference modified layer M1 formed on the back surface Wb (flat surface) of the first wafer W as a reference, instead of the outer edge of the first wafer W. This makes it possible to use an optical system (microcamera) with a higher numerical aperture (NA) than when the outer edge of the chamfered first wafer W is used as a reference, allowing for more precise alignment of the laser irradiation system 210. More specifically, the formation position of the peripheral modified layer M2 and the formation region of the unbonded region Ae can be more appropriately controlled, and as a result, the peripheral portion We of the first wafer W can be appropriately removed.

[0057] In this embodiment, as described above, a micro camera is used as the second imaging mechanism 220, but even when a macro camera is used as the second imaging mechanism 220, the formation position of the peripheral modified layer M2 relative to the formation area of ​​the unbonded area Ae can be appropriately determined compared to when the formation position of the peripheral modified layer M2 is determined based on the outer edge of the first wafer W. However, by using a micro camera with a higher numerical aperture than a macro camera as the second imaging mechanism 220, the detection accuracy of the reference modified layer M1 is improved, and as a result, the formation position of the peripheral modified layer M2 relative to the formation area of ​​the unbonded area Ae can be more appropriately determined.

[0058] Incidentally, a crack C2 extends from the peripheral modified layer M2 in the thickness direction inside the first wafer W. The extension of the crack C2 is controlled, for example, by adjusting the formation position of the peripheral modified layer M2 in the thickness direction of the first wafer W, or by adjusting the output power or blurring of the laser light when forming the peripheral modified layer M2. In the edge trimming described below, in addition to the peripheral modified layer M2, the peripheral portion We is removed from the second wafer S using the crack C2 as a base point.

[0059] The overlapped wafer T on which the peripheral modified layer M2 and the divided modified layer M3 have been formed is then transferred by the wafer transfer device 50 to the separation device 62. In the separation device 62, as shown in FIG. 6(d), the peripheral portion We of the first wafer W is removed, i.e., edge trimming is performed (step St6 in FIG. 5). At this time, the peripheral portion We is peeled from the center of the first wafer W (the radially inner side of the peripheral portion We) using the peripheral modified layer M2 as a base point, and is also completely peeled from the second wafer S using the unbonded region Ae as a base point. At this time, the removed peripheral portion We is also broken into small pieces using the divided modified layer M3 as a base point.

[0060] In removing the peripheral edge portion We, for example, a wedge-shaped blade B (see FIG. 6(d)) may be inserted into the interface between the first wafer W and the second wafer S that form the overlapped wafer T.

[0061] The overlapped wafer T, from which the peripheral edge portion We of the first wafer W has been removed, is then transferred by the wafer transfer device 70 to the chuck 83 of the processing device 80. Next, the chuck 83 is moved to the processing position A1, and as shown in FIG. 8(a), the back surface Wb of the first wafer W is ground by the grinding unit 84 (step St7 in FIG. 5). This grinding process reduces the thickness of the first wafer W (overlapping wafer T) to a desired target thickness. Thereafter, the ground surface of the first wafer W may be cleaned with a cleaning liquid using a cleaning liquid nozzle (not shown).

[0062] Next, the overlapped wafer T is transferred to the etching apparatus 40 by the wafer transfer apparatus 70. In the etching apparatus 40, as shown in FIG. 8(b), the ground surface of the first wafer W is wet-etched with a chemical solution E (step St8 in FIG. 5). Grinding marks may be formed on the ground surface ground by the processing apparatus 80 described above. In this step St8, the first wafer W (overlapping wafer T) is further thinned by wet etching, and the ground surface is smoothed by removing the grinding marks.

[0063] Next, the overlapped wafer T is transported by the wafer transport device 50 to the cleaning device 41. In the cleaning device 41, the remaining film (bonding films Fw, Fs) on the surface Sa of the second wafer S, which is exposed by removing the peripheral edge portion We, is irradiated with cleaning laser light L3, thereby removing the remaining film and particles P and exposing the surface Sa of the second wafer S, as shown in FIG. 8(c) (step St9 in FIG. 5).

[0064] In this step St9, in order to completely remove the peripheral edge We of the first wafer W as described above, the entire surface Sa of the second wafer S corresponding to the peripheral edge We is irradiated with the cleaning laser light L3. Specifically, the overlapped wafer T is rotated, and the irradiation position of the cleaning laser beam L3 is moved in the radial direction by a galvanometer scan (not shown), while the cleaning laser beam L3 is periodically irradiated from the laser head. This allows the cleaning laser beam L3 to be irradiated onto the entire surface of the residual film, i.e., the residual film on the surface Sa can be completely removed.

[0065] In the cleaning device 41, the ground surface of the first wafer W and the back surface Sb of the second wafer S may be further cleaned with a cleaning liquid using a cleaning liquid nozzle (not shown).

[0066] In this embodiment, after wet etching the ground surface of the first wafer W (step St8), the residual film on the surface Sa of the second wafer S is removed (step St9). The order of wet etching and residual film removal is not particularly limited. Specifically, the residual film may be removed after removing the peripheral edge We of the first wafer W (step St6) and before the grinding process (step St7), or after the grinding process (step St7) and before the wet etching (step St8).

[0067] However, if the residual film is removed prior to the wet etching (step St8), the device layers Dw and Ds may be affected by the chemical solution supplied during the wet etching. Specifically, if wet etching is performed after the grinding process (step St7) shown in Fig. 9(a) or the removal of the residual film using the cleaning laser light L3 shown in Fig. 9(b), the side surfaces of the bonding films Fw and Fs exposed by the removal of the residual film may be removed by the chemical solution E supplied, as shown in Fig. 9(c), which may damage the device layers Dw and Ds. In view of this, it is desirable to perform wet etching of the ground surface of the first wafer W (step St8) and removal of the residual film on the surface Sa of the second wafer S (step St9) in this order.

[0068] Thereafter, the overlapped wafer T that has undergone all the processing is transferred by the wafer transfer device 50 to the transition device 30, and further transferred by the wafer transfer device 20 to the cassette C on the cassette mounting table 10. In this way, the series of wafer processing steps in the wafer processing system 1 is completed.

[0069] According to the above embodiment, prior to forming the peripheral modified layer M2 that serves as a base point for removing the peripheral edge portion We inside the first wafer W, a reference modified layer M1 that serves as a reference for the irradiation position of the internal-use laser light L2 is formed on the back surface Wb of the first wafer W. Then, when forming the peripheral modified layer M2 inside the first wafer W, the irradiation position of the internal-use laser light L2 is determined using the reference modified layer M1 formed on the back surface Wb of the first wafer W as a target. As a result, since the target formed on the back surface Wb of the first wafer W, i.e., a flat surface, is detected by a camera, an optical system (micro camera) with a higher numerical aperture (NA) can be used compared to the conventional case in which the outer end (edge ​​portion) of a chamfered wafer is detected by a camera, and as a result, the irradiation position of the internal laser light L2 can be adjusted more precisely and precisely (alignment of the laser irradiation system 210). Furthermore, even if the wafer processing system 1 is provided with multiple laser irradiation devices (in this embodiment, an interface modification device 60 and an internal modification device 61), it is possible to prevent deviations in the laser light irradiation positions between these laser irradiation devices.

[0070] Furthermore, according to the above embodiment, the target reference modified layer M1 is formed at a position slightly shifted radially outward from the incident position of the internal laser light L2 on the back surface Wb of the first wafer W (the formation position of the peripheral modified layer M2). Normally, when the silicon of the first wafer W is modified by laser ablation, the internal laser light L2 does not properly transmit through the modified portion (in this embodiment, the reference modified layer M1), which may result in the peripheral modified layer M2 not being properly formed. In this regard, according to the above embodiment, the reference modified layer M1 is formed at a position slightly shifted from the incident position of the internal laser light L2, so that the incidence of the internal laser light L2 is not obstructed when forming the peripheral modified layer M2, and the peripheral modified layer M2 can be formed appropriately.

[0071] As described above, when the reference modified layer M1 is formed on the back surface Wb of the first wafer W, the internal-use laser light L2 cannot be properly transmitted to the inside of the first wafer W. In such a case, if the reference modified layer M1 is formed radially outward from the incident position of the internal-use laser light L2, the divided modified layer M3 shown in FIG. 6(c) may not be properly formed. In consideration of this point, it is desirable that the formation position of the reference modified layer M1 be determined to be slightly radially outside the incident position of the internal laser light L2 and not overlapping with the formation position of the divided modified layer M3 in a planar view, or slightly radially inside the incident position of the internal laser light L2.

[0072] In the above embodiment, the crack C2 extending in the thickness direction during the formation of the peripheral modification layer M2 reaches approximately perpendicular to the front surface Wa and back surface Wb of the first wafer W, but the method of extending the crack C2 is not limited to this.

[0073] Specifically, for example, as shown in FIG. 10, by controlling the position where the peripheral modified layer M2 is formed to be slightly radially inward from the inner end of the unbonded region Ae, Most The crack C2 extending downward in the peripheral modified layer M2 formed below may be connected to the crack C4 extending obliquely upward from the inner end of the unbonded region Ae. In this case, compared to when the crack C2 is caused to reach approximately perpendicular to the surface Wa, the crack can be caused to reach from the surface Wa to the back surface Wb of the first wafer W in a stable manner, i.e., the peripheral portion We can be removed in a stable and appropriate manner.

[0074] Even in such a case, the irradiation position of the internal laser beam L2 can be appropriately determined, as in the above embodiment, by forming the reference modified layer M1 at a position slightly shifted from the formation position of the peripheral modified layer M2 on the back surface Wb as shown in Fig. 10. In this case, as also shown in Fig. 10, the formation position of the reference modified layer M1 does not necessarily have to be shifted from the position corresponding to the inner end of the unbonded region Ae.

[0075] 10, adjacent peripheral modified layers M2 may be formed on the front surface Wa side of the first wafer W so as to be offset from each other in the thickness direction and the radial direction, i.e., so as to be aligned obliquely, as shown in Fig. 11. In this case, the crack C4 can be propagated obliquely upward more easily than in the case shown in Fig. 10.

[0076] In this case, the reference modified layer M1 is formed at the radially outermost peripheral modified layer M2 among the plurality of peripheral modified layers M2 as shown in FIG. low The peripheral modified layer M2 is formed slightly radially outward or radially innermost than the high It is preferable that the position is determined slightly radially inward.

[0077] 11, the peripheral modified layers M2 may be arranged diagonally across the entire thickness of the first wafer W, as shown in FIG. 12. In this case, chipping is prevented from occurring in the peripheral portion We to be removed or in the central portion of the first wafer W after the peripheral portion We has been removed. This prevents particle generation within the wafer processing system 1 and also prevents degradation of the quality of the first wafer W (device wafer) as a product.

[0078] In this case, the reference modified layer M1 is formed at the radially outermost peripheral modified layer M2 among the plurality of peripheral modified layers M2 as shown in FIG. low The peripheral modified layer M2 is formed slightly radially outward or radially innermost than the high It is preferable that the position is determined slightly radially inward.

[0079] In the above embodiment, the first wafer W is thinned by the grinding process in the processing device 80 after edge trimming, but the method for thinning the first wafer W is not limited to this. 13(a), on a laminated wafer T on which an unbonded region Ae and a reference modified layer M1 have been formed, in addition to a peripheral modified layer M2 that serves as a base point for peeling off the peripheral portion We, an internal surface modified layer M4 that serves as a base point for thinning due to separation of the first wafer W is formed in an internal modification device 61. A crack C5 extending in the surface direction of the first wafer W is formed from the internal surface modified layer M4, and the crack C5 is connected to the peripheral modified layer M2 or to the upper end of a crack C2 that extends from the peripheral modified layer M2 in the thickness direction. 13(b), in the separation device 62, the first wafer W is suction-held by the suction-holding surface of the separation arm ARM, while the second wafer S is suction-held by a chuck (not shown). Thereafter, by raising the separation arm ARM while the suction-holding surface is suction-holding the first wafer W, the first wafer W is separated and thinned using the inner surface modified layer M4 as a base point. At this time, the peripheral edge portion We of the first wafer W is peeled off from the second wafer S together with the back surface Wb side of the first wafer W.

[0080] Even in such a case, by forming the reference modified layer M1 at a position slightly shifted from the formation position of the peripheral modified layer M2 on the back surface Wb as shown in Figure 13(a), the irradiation position of the internal laser light L2 can be appropriately determined, as in the above embodiment. In such a case, in order to properly form an internal surface modification layer M4 inside the first wafer W, it is desirable to determine the formation position of the reference modification layer M1 at a position slightly shifted radially outward from the formation position of the peripheral modification layer M2.

[0081] Even when the peripheral edge portion We of the first wafer W is removed integrally with the back surface Wb side of the first wafer in this manner, the peripheral modified layers M2 may be arranged in an oblique direction. In this case, the reference modified layer M1 is formed at the radially outermost position of the plurality of peripheral modified layers M2. low It is desirable that the position be determined slightly radially outward.

[0082] In the above embodiment, after the unbonded region Ae is formed in the interface modification device 60, the peripheral modified layer M2 is formed in the internal modification device 61, but the order of forming the unbonded region Ae and the peripheral modified layer M2 is not limited to this.

[0083] In this case, in the internal modifying device 61, alignment of the first wafer W based on the outer edge of the first wafer W and determination of the irradiation position of the internal laser light L2 are performed using a macro camera (not shown). In other words, the formation position of the peripheral modified layer M2 is determined based on the outer edge of the first wafer W. In addition, in the internal modification device 61, after forming the peripheral modified layer M2 and the divided modified layer M3, the focal point position of the internal laser light L2 (the irradiation position of the internal laser light L2) is moved to the back surface Wb of the first wafer W, and a reference modified layer M1 is formed, which serves as a reference when determining the irradiation position of the interface laser light L1 (the formation position of the unbonded area Ae).

[0084] Furthermore, in the interface modification device 60, a microcamera (not shown) is used to align the first wafer W with the reference modified layer M1 as a reference and to determine the irradiation position of the interface laser light L1. In other words, the formation position of the unbonded region Ae is determined with the reference modified layer M1 formed on the back surface Wb of the first wafer W as a reference.

[0085] According to the technology disclosed herein, even when the peripheral modified layer M2 is formed prior to the unbonded area Ae, the irradiation position of the interface laser light L1 can be determined based on the reference modified layer M1 formed on the back surface Wb of the first wafer W. As a result, the camera detects the reference mark formed on the back surface Wb of the first wafer W, i.e., the flat surface, as a target, so an optical system (micro camera) with a higher numerical aperture (NA) can be used compared to the conventional case in which the outer end (edge ​​portion) of a chamfered wafer is detected using a camera, and as a result, the irradiation position of the interface laser light L1 can be adjusted more precisely and precisely (alignment of the laser irradiation system 110). Furthermore, even if the wafer processing system 1 is provided with multiple laser irradiation devices (in this embodiment, an interface modification device 60 and an internal modification device 61), it is possible to appropriately prevent misalignment between the formation position of the peripheral modification layer M2 and the formation area of ​​the unbonded area Ae, and as a result, the peripheral portion We of the first wafer W can be appropriately removed.

[0086] In the above embodiment, the peripheral portion We of the first wafer W is peeled off (edge ​​trimmed) in the separation device 62. However, instead of providing the separation device 62 for edge trimming in the wafer processing system 1, the peripheral portion We may be removed in the processing device 80. Specifically, when the peripheral edge We of the first wafer W is removed independently, the peripheral edge We can be removed from the second wafer S by utilizing the grinding resistance generated in the grinding process in the processing device 80. Furthermore, when the peripheral portion We of the first wafer W is removed integrally with the back surface Wb of the first wafer W, the first wafer W may be separated when transferring the overlapping wafer T from the wafer transfer device 70 to the chuck 83 in the processing device 80. In these cases, the processing device 80 functions as the "edge removing device" according to the technology of the present disclosure.

[0087] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0088] 1. Wafer Processing System 60 Interface Modification Equipment 61 Internal reformer 62 Separation device Ae Unbonded area M1 Standard Modified Layer M2 peripheral modification layer T Polymerized Wafer W First wafer Wb (first wafer) backside We Periphery S Second wafer

Claims

1. A method for treating a laminated substrate in which a first substrate and a second substrate are bonded, comprising: forming a peripheral modified layer along the boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; forming an unbonded region that weakens the bonding strength between the first substrate and the second substrate in the peripheral portion; forming a reference modified layer serving as a reference for determining a position for forming either the peripheral modified layer or the unbonded region on a surface of the first substrate that is not bonded to the second substrate; removing the peripheral portion starting from the peripheral modification layer.

2. the unbonded region, the reference modified layer, and the peripheral modified layer are formed in this order; determining a formation position of the unbonded region and a formation position of the reference modified layer based on an outer edge of the first substrate; The processing method according to claim 1 , wherein the reference modified layer is formed at a position radially shifted from a position corresponding to an inner end of the unbonded region.

3. the unbonded region, the reference modified layer, and the peripheral modified layer are formed in this order; determining a formation position of the unbonded region and a formation position of the reference modified layer based on an outer edge of the first substrate; The processing method according to claim 1 , wherein the reference modified layer is formed at a position radially shifted from a position corresponding to a planned position for forming the peripheral modified layer.

4. The method includes detecting the reference modified layer formed on the non-bonding surface of the first substrate from the non-bonding surface side of the first substrate using an imaging mechanism; 4. The processing method according to claim 2, wherein in forming the peripheral modified layer, the peripheral modified layer is formed by irradiating a laser beam from a non-bonding surface side of the first substrate.

5. Detecting an outer edge of the first substrate with a first imaging mechanism; detecting the reference modified layer formed on the non-bonding side surface of the first substrate with a second imaging mechanism; 4. The processing method according to claim 2, wherein the numerical aperture of the second imaging mechanism is set higher than the numerical aperture of the first imaging mechanism.

6. the peripheral modified layer, the reference modified layer, and the unbonded region are formed in this order; determining a formation position of the peripheral modified layer and a formation position of the reference modified layer based on an outer edge of the first substrate; The processing method according to claim 1 , wherein the reference modified layer is formed at a position radially shifted from a position corresponding to a position where the peripheral modified layer is formed.

7. Detecting an outer edge of the first substrate with a first imaging mechanism; detecting the reference modified layer formed on the non-bonding side surface of the first substrate with a second imaging mechanism; 7. The processing method according to claim 6, wherein the numerical aperture of the first imaging mechanism is set higher than the numerical aperture of the second imaging mechanism.

8. wet etching the first substrate after removing the peripheral edge portion; The processing method according to any one of claims 1 to 3, 6 and 7, further comprising removing a surface film remaining on the surface of the second substrate exposed by removing the peripheral portion by irradiating the surface with laser light.

9. The processing method according to claim 8 , wherein the removal of the surface film is performed after wet etching the first substrate.

10. forming an internal surface modification layer that serves as a starting point for separation of the first substrate; The processing method according to any one of claims 1 to 3, 6 and 7, wherein, when removing the peripheral edge portion, the peripheral edge portion is removed integrally with the non-bonding side of the first substrate.

11. a plurality of the peripheral modification layers are formed inside the first substrate; The processing method according to any one of claims 1 to 3, 6 and 7, wherein adjacent peripheral modified layers are formed so as to be shifted in the thickness direction and the radial direction of the first substrate.

12. A processing system for processing a laminated substrate in which a first substrate and a second substrate are bonded together, comprising: an internal modification device that forms a peripheral modification layer along the boundary between the peripheral portion of the first substrate to be removed and the central portion of the first substrate; an interface modification device that forms an unbonded region that weakens the bonding strength between the first substrate and the second substrate in the peripheral portion; a reference forming device that forms a reference modified layer serving as a reference for determining the formation position of either the peripheral modified layer or the unbonded region on a surface of the first substrate that is not bonded to the second substrate; a peripheral edge removing device that removes the peripheral portion starting from the peripheral modified layer; a control unit; and a processing system.

13. the reference forming device and the interface modifying device are integrally configured, The control device a control for determining a formation position of the unbonded region and a formation position of the reference modified layer based on an outer edge of the first substrate; The processing system according to claim 12 , further comprising: a control for forming the reference modified layer at a position radially shifted from a position corresponding to an inner end of the unbonded region.

14. the reference forming device and the interface modifying device are integrally configured, The control device a control for determining a formation position of the unbonded region and a formation position of the reference modified layer based on an outer edge of the first substrate; The processing system according to claim 12 , further comprising: a control for forming the reference modified layer at a position radially shifted from a position corresponding to a planned position for forming the peripheral modified layer.

15. The internal reformer, an imaging mechanism for detecting the reference modified layer formed on the non-bonding surface of the first substrate from the non-bonding surface side of the first substrate; 15. The processing system according to claim 13, wherein the peripheral modified layer is formed by irradiating a laser beam from a non-bonding surface side of the first substrate.

16. the interface modification device includes a first imaging mechanism that detects an outer edge of the first substrate; the internal reforming device includes a second imaging mechanism that detects the reference reformed layer formed on the non-bonding side surface of the first substrate; 15. The processing system of claim 13 or 14, wherein the second imaging mechanism has a higher numerical aperture than the first imaging mechanism.

17. The reference forming device and the internal reforming device are integrally configured, The control device a control for determining a formation position of the peripheral modified layer and a formation position of the reference modified layer based on an outer edge of the first substrate; The processing system according to claim 12 , further comprising: a control for forming the reference modified layer at a position radially shifted from a position corresponding to a position at which the peripheral modified layer is formed.

18. the interface modification device includes a first imaging mechanism that detects an outer edge of the first substrate; the internal reforming device includes a second imaging mechanism that detects the reference reformed layer formed on the non-bonding side surface of the first substrate; 20. The processing system of claim 17, wherein the first imaging mechanism has a higher numerical aperture than the second imaging mechanism.

19. an etching apparatus that wet-etches the first substrate after the peripheral edge portion has been removed; The processing system according to any one of claims 12 to 14, 17, and 18, further comprising: a cleaning device that removes a surface film remaining on the surface of the second substrate exposed by removing the peripheral portion by irradiating the surface with laser light.

20. 20. The processing system according to claim 19, wherein the control device executes control such that removal of the surface film in the cleaning device is performed after wet etching of the first substrate in the etching device.

21. the control device executes control to form an internal surface modification layer in the internal modification device, the internal surface modification layer serving as a starting point for separation of the first substrate; The processing system according to any one of claims 12 to 14, 17 and 18, wherein when the peripheral edge removal device removes the peripheral edge, the peripheral edge is removed integrally with the non-bonding side of the first substrate.

22. The control device, in the internal reformer, Controlling the formation of a plurality of the peripheral modification layers within the first substrate; The processing system according to any one of claims 12 to 14, 17 and 18, further comprising: a control for forming adjacent peripheral modified layers so as to be offset in the thickness direction and the radial direction of the first substrate.

Images