Photoresist remover

Abstract

To provide a photoresist stripping solution having excellent storage stability while maintaining sufficient resist detachability.SOLUTION: The photoresist stripping solution contains a quaternary ammonium hydroxide (A), water (B), and an organic solvent (C). The organic solvent (C) is a mixture of the following organic solvents (C1), (C2) and (C3): an organic solvent (C1) having a polarity term (dP) of Hansen solubility parameters of 15.0 or more and less than 21.0 and a hydrogen bond term (dH) thereof of 6.0 or more and less than 14.0; an organic solvent (C2) having a polarity term (dP) of Hansen solubility parameters of 3.0 or more and less than 14.0 and a hydrogen bond term (dH) thereof of 8.0 or more and less than 31.0; and an organic solvent (C3) having a polarity term (dP) of Hansen solubility parameters of 3.0 or more and less than 8.0 and a hydrogen bond term (dH) thereof of 2.5 or more and less than 8.0.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a photoresist stripper. [Background technology]

[0002] Semiconductor substrates and the like have electrode structures with fine wiring, and photoresists are used in their manufacturing process. The electrode structures are manufactured, for example, by applying photoresist to a conductive metal layer such as aluminum or an insulating film such as SiO2 film formed on a substrate, exposing and developing the photoresist to form a resist pattern, etching the conductive metal layer or insulating film using the patterned resist as a mask to form fine wiring, and then removing the unnecessary photoresist with a photoresist remover. In addition to the photoresist stripping performance, photoresist removers are required to be storage stable, preventing solidification and precipitation even at low temperatures.

[0003] Patent Document 1 discloses a photoresist stripping solution that contains quaternary ammonium hydroxide as a strong alkaline agent for stripping photoresist, and also contains an alkyleneamine for dissolving the quaternary ammonium hydroxide in dimethyl sulfoxide, and a polyhydric alcohol and / or a glycol ether having a molecular weight of 100 or less. Although the storage stability of this stripping solution at low temperatures has been improved, this is not sufficient, and further improvement in photoresist stripping performance has been desired.

[0004] Patent Document 2 discloses that the photoresist stripping performance can be improved by blending multiple organic solvents into a photoresist stripping solution, but the storage stability of this stripping solution at low temperatures is not sufficient. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. WO2017 / 065153 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-254555 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a photoresist stripping solution that has excellent storage stability while maintaining sufficient resist stripping properties. [Means for solving the problem]

[0007] The present inventors have discovered that a photoresist stripping solution containing a specific organic solvent has excellent storage stability while maintaining sufficient resist stripping properties, and have thus completed the present invention.

[0008] That is, the present invention provides a photoresist stripping solution containing a quaternary ammonium hydroxide (A), water (B), and an organic solvent (C), The organic solvent (C) is the following organic solvents (C1), (C2), and (C3): Organic solvents (C1) whose Hansen solubility parameter polarity term (dP) is 15.0 or more and less than 21.0, and whose hydrogen bond term (dH) is 6.0 or more and less than 14.0 Organic solvents (C2) whose Hansen solubility parameter polarity term (dP) is 3.0 or more and less than 14.0, and whose hydrogen bond term (dH) is 8.0 or more and less than 31.0 Organic solvents (C3) whose Hansen solubility parameter polarity term (dP) is 3.0 or more and less than 8.0, and whose hydrogen bond term (dH) is 2.5 or more and less than 8.0 The present invention relates to a photoresist stripper which is a mixture of

[0009] The content of the organic solvent (C1) is preferably 15 to 80% by weight.

[0010] The content of the organic solvent (C2) is preferably 1 to 50% by weight.

[0011] The content of the organic solvent (C3) is preferably 3 to 50% by weight.

[0012] The total content of the organic solvents (C1) to (C3) is preferably 60 to 95% by weight.

[0013] The photoresist stripping solution preferably further contains an alkyleneamine or alkanolamine (D).

[0014] Component (D) is preferably an alkanolamine.

[0015] The organic solvent (C1) is preferably dimethyl sulfoxide.

[0016] The photoresist stripper is preferably used to strip dry film resist. [Effects of the Invention]

[0017] The photoresist stripping solution of the present invention contains a mixture of specific organic solvents (C1) to (C3) in addition to a quaternary ammonium hydroxide (A) and water (B), and therefore has excellent storage stability while maintaining sufficient resist stripping properties. DETAILED DESCRIPTION OF THE INVENTION

[0018] <<Photoresist remover>> The photoresist stripping solution of the present invention is a photoresist stripping solution containing a quaternary ammonium hydroxide (A), water (B), and an organic solvent (C), wherein the organic solvent (C) is selected from the following organic solvents (C1), (C2), and (C3): (C1) An organic solvent whose polarity term (dP) of the Hansen solubility parameter is 15.0 or more and less than 21.0, and whose hydrogen bond term (dH) is 6.0 or more and less than 14.0 (C2) Organic solvents whose polarity term (dP) of the Hansen solubility parameter is 3.0 or more and less than 14.0, and whose hydrogen bond term (dH) is 8.0 or more and less than 31.0 (C3) Organic solvents whose polarity term (dP) of the Hansen solubility parameter is 3.0 or more and less than 8.0, and whose hydrogen bond term (dH) is 2.5 or more and less than 8.0 It is characterized in that it is a mixture of

[0019] <(A) Quaternary ammonium hydroxide> As the quaternary ammonium hydroxide, for example, a compound represented by the following general formula (1) can be used.

[0020] [ka]

[0021] In general formula (1), R 1 ~R 4 represents an alkyl group having 1 to 12 carbon atoms, a hydroxy-substituted alkyl group, or an aromatic-substituted alkyl group, and may be the same or different.

[0022] Specific examples of quaternary ammonium hydroxides include tetramethylammonium hydroxide (TMAH), trimethylethylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, trimethyl(2-hydroxyethyl)ammonium hydroxide, tripropyl(2-hydroxyethyl)ammonium hydroxide, and trimethyl(1-hydroxypropyl)ammonium hydroxide. These may be used alone or in combination of two or more. Among these, from the viewpoint of resist strippability, tetramethylammonium hydroxide, trimethylethylammonium hydroxide, tetrabutylammonium hydroxide, and benzyltrimethylammonium hydroxide are preferred. Furthermore, tetramethylammonium hydroxide is more preferred because it has the smallest molecular weight, a high molar concentration per unit weight, and works effectively.

[0023] In the photoresist stripping solution of the present invention, the content of the quaternary ammonium hydroxide is not particularly limited, but is preferably 0.5 to 20% by weight, more preferably 0.8 to 8% by weight, and even more preferably 1 to 5% by weight. If the content of the quaternary ammonium hydroxide is less than 0.5% by weight, the resist stripping ability may decrease, and if it exceeds 20% by weight, metal corrosivity may increase.

[0024] <(B)Water> Water is added to dissolve the quaternary ammonium hydroxide. The water content is not particularly limited, but from the viewpoint of resist strippability, it is preferably 30% by weight or less, and from the viewpoint of negative resist strippability, it is preferably 20% by weight or less. In particular, when the photoresist stripper of the present invention containing the alkyleneamine or alkanolamine (D) described below is used to strip a negative dry film resist, the water content is more preferably 10% by weight or less, even more preferably 1 to 10% by weight, and particularly preferably 2 to 6% by weight. If the water content is less than 1% by weight, the solubility of the quaternary ammonium hydroxide may decrease, and if it exceeds 10% by weight, the strippability of the negative dry film resist may decrease. On the other hand, when the photoresist stripper of the present invention not containing the alkyleneamine or alkanolamine (D) is used to strip a negative dry film resist, the water content is more preferably 2 to 15% by weight, even more preferably 4 to 10% by weight. If the water content is less than 2% by weight, the solubility of the quaternary ammonium hydroxide may decrease, and if it exceeds 15% by weight, the strippability of the negative dry film resist may decrease.

[0025] <(C) Organic Solvent> Organic solvent (C) is a mixture of organic solvents (C1), (C2), and (C3). Organic solvents (C1) to (C3) are solvents that satisfy specific Hansen solubility parameters. The Hansen solubility parameters are Hildebrand solubility parameters expressed using three parameters: the dispersion term dD, the polarity term dP, and the hydrogen bonding term dH. The dispersion term dD, the polarity term dP, and the hydrogen bonding term dH are substance-specific physical property values, and are listed, for example, in "Hansen Solubility Parameters: A User's Handbook, HSPiP 3rd Edition ver. 3.0.20." The hydrogen bonding term dH can be calculated using the values ​​described in the literature, or it can be calculated using the Y-MB method, a neural network method.

[0026] The total content of the organic solvents (C1) to (C3) in the entire photoresist stripping solution is not particularly limited, but is preferably 60 to 95% by weight, more preferably 80 to 95% by weight, and even more preferably 85 to 95% by weight, from the viewpoint of the balance between resist stripping properties and storage stability. If it is less than 60% by weight, the proportion of quaternary ammonium hydroxide and water will be high, which may cause metal corrosion, and if it exceeds 95% by weight, the stripping properties may be insufficient.

[0027] <Organic solvent (C1)> The organic solvent (C1) has a polarity term (dP) of the Hansen solubility parameter of 15.0 or more and less than 21.0, and a hydrogen bond term (dH) of 6.0 or more and less than 14.0. The polarity term (dP) is preferably 15.5 to 20, more preferably 16 to 20. If the polarity term (dP) is less than 15.0, the release property tends to be insufficient, and if it is 21.0 or more, the storage stability tends to be insufficient. The hydrogen bond term (dH) is preferably 6 to 13, more preferably 7 to 12. If the hydrogen bond term (dH) is less than 6.0, the storage stability tends to be insufficient, and if it is 14.0 or more, the release property tends to be insufficient.

[0028] The dispersion term (dD) of the Hansen solubility parameter of the organic solvent (C1) is not particularly limited, but is preferably from 15 to 21, and more preferably from 17 to 21. If it is less than 15 or exceeds 21, the peelability may be insufficient.

[0029] Specific examples of the organic solvent (C1) include dimethyl sulfoxide, sulfolane, dimethyl sulfone, 2-pyrrolidone, γ-butyrolactone, etc. These solvents may be used alone or in combination of two or more.

[0030] The content of the organic solvent (C1) in the entire photoresist stripping solution is not particularly limited, but is preferably 15 to 80% by weight, more preferably 50 to 80% by weight, and even more preferably 50 to 78% by weight. If it is less than 15% by weight or more than 80% by weight, the resist stripping ability may be insufficient.

[0031] <Organic solvent (C2)> The organic solvent (C2) has a polarity term (dP) of the Hansen solubility parameter of 3.0 or more and less than 14.0, and a hydrogen bond term (dH) of 8.0 or more and less than 31.0. The polarity term (dP) is preferably 3.5 to 13, more preferably 4 to 13. If the polarity term (dP) is less than 3.0, the release property tends to be insufficient, and if it is 14.0 or more, the storage stability tends to be insufficient. The hydrogen bond term (dH) is preferably 8.5 to 30, more preferably 9 to 30. If the hydrogen bond term (dH) is less than 8.0, the storage stability tends to be insufficient, and if it is 31.0 or more, the release property tends to be insufficient.

[0032] The dispersion term (dD) of the Hansen solubility parameter of the organic solvent (C2) is not particularly limited, but is preferably from 10 to 25, more preferably from 14 to 20. If it is less than 10, the peelability may be insufficient, and if it exceeds 25, the storage stability may be insufficient.

[0033] Specific examples of the organic solvent (C2) include polyhydric alcohols such as glycerol; methoxybutanols such as 1-butoxy-2-propanol and 3-methoxy-3-methylbutanol; glycols such as ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, and tripropylene glycol; ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, ethylene glycol hexyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, diethylene glycol hexyl ether, and propylene glycol methyl ether. and glycol monoethers such as propylene glycol ethyl ether, propylene glycol butyl ether, propylene glycol hexyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl ether, dipropylene glycol butyl ether, dipropylene glycol hexyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, triethylene glycol hexyl ether, tripropylene glycol methyl ether, tripropylene glycol ethyl ether, tripropylene glycol butyl ether, and tripropylene glycol hexyl ether. These solvents may be used alone or in combination of two or more.

[0034] Among the above-mentioned organic solvents, polyhydric alcohols, methoxybutanols, and glycols are preferred as the organic solvent (C2) since they are effective even when added in small amounts.

[0035] The content of the organic solvent (C2) in the entire photoresist stripping solution is not particularly limited, but is preferably 1 to 50 wt %, more preferably 2 to 30 wt %. If it is less than 1 wt %, the storage stability may be insufficient, and if it exceeds 50 wt %, the resist stripping ability may be insufficient.

[0036] <Organic solvent (C3)> The organic solvent (C3) has a polarity term (dP) of the Hansen solubility parameters of 3.0 or more and less than 8.0, and a hydrogen bond term (dH) of 2.5 or more and less than 8.0. The polarity term (dP) is preferably 4.0 to 7.5, more preferably 4.5 to 7.0. If the polarity term (dP) is less than 3.0, the release properties tend to be insufficient, and if it is 8.0 or more, the storage stability tends to be insufficient. The hydrogen bond term (dH) is preferably 3 to 7.5, more preferably 4.0 to 7.0. If the hydrogen bond term (dH) is less than 2.5, the release properties tend to be insufficient, and if it is 8.0 or more, the storage stability tends to be insufficient.

[0037] The dispersion term (dD) of the Hansen solubility parameter of the organic solvent (C3) is not particularly limited, but is preferably 10 to 20, more preferably 13 to 18. If it is less than 10, the storage stability may be insufficient, and if it exceeds 20, the storage stability may be insufficient.

[0038] Specific examples of the organic solvent (C3) include ethylene glycol dibutyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, triethylene glycol diethyl ether, triethylene glycol dibutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dibutyl ether, dipropylene glycol diethyl ether, dipropylene glycol dibutyl ether, ethylene glycol methyl ethyl ether, ethylene glycol methyl butyl ether, ethylene glycol methyl ether, Examples of the solvent include glycol diethers such as diethylene glycol methyl ether, diethylene glycol methyl butyl ether, diethylene glycol methyl butyl ether, triethylene glycol methyl ether, triethylene glycol methyl butyl ether, propylene glycol methyl ether, propylene glycol methyl butyl ether, propylene glycol methyl butyl ether, dipropylene glycol methyl ether, dipropylene glycol methyl butyl ether, dipropylene glycol methyl butyl ether, tripropylene glycol methyl ether, tripropylene glycol methyl butyl ether, and tripropylene glycol methyl butyl ether. These solvents may be used alone or in combination of two or more.

[0039] Among the above-mentioned organic solvents, dimethyl ethers are preferred as the organic solvent (C3) because of their good removability.

[0040] The content of the organic solvent (C3) in the entire photoresist stripping solution is not particularly limited, but is preferably 3 to 50 wt %, more preferably 5 to 40 wt %. If it is less than 3 wt %, the storage stability may be insufficient, and if it exceeds 50 wt %, the stripping ability may be insufficient.

[0041] <Optional ingredients> The photoresist stripper solution of the present invention may contain other optional components in addition to the aforementioned components (A) to (C), such as alkyleneamine or alkanolamine (D), anticorrosive agents, organic solvents other than component (C), surfactants, and antifoaming agents.

[0042] When the photoresist remover contains an alkyleneamine or alkanolamine (D), the alkyleneamine or alkanolamine (D) acts as a dissolving agent for the quaternary ammonium hydroxide.

[0043] The alkyleneamine is not particularly limited, and a compound represented by the following general formula (2) can be used.

[0044] [ka] (In the general formula (2), m and n represent integers of 1 to 5. R 5 , R 6 R each independently represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. 5 , R 6 If there are multiple, they may be the same or different.)

[0045] Specific examples of alkyleneamines include ethyleneamines represented by the following general formula (3), such as ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), and pentaethylenehexamine (PEHA), as well as propylenediamine. Among these, from the viewpoint of carbon dioxide absorption, ethyleneamines represented by the following general formula (3) are preferred, polyethyleneamines with n=2 or more are more preferred, and triethylenetetramine and tetraethylenepentamine are even more preferred. These alkyleneamines may be used alone or in combination of two or more. [ka] (In general formula (3), n represents an integer of 1 to 5.)

[0046] Specific examples of alkanolamines include monoethanolamine (MEA), N-methylethanolamine (MMA), monomethyldiethanolamine (MDA), and triethanolamine (TEA). Among these, monoethanolamine is preferred from the viewpoint of storage stability.

[0047] When an alkyleneamine or alkanolamine (D) is blended in the photoresist stripping solution of the present invention, its content is not particularly limited, but is preferably 0.5 to 25 wt%, more preferably 1 to 20 wt%. If the content of alkyleneamine or alkanolamine (D) is less than 0.5 wt%, stability over time may decrease, and if it exceeds 25 wt%, resist stripping properties may decrease. Furthermore, from the viewpoint of stability over time, the content of alkyleneamine or alkanolamine (D) is preferably 10 parts by weight or more per 100 parts by weight of quaternary ammonium hydroxide.

[0048] The anticorrosive agent is not particularly limited, but examples thereof include nitrogen-containing heterocyclic compounds such as benzotriazole, aminotetrazole, 5-amino-1-phenyltetrazole, 5-amino-1-(1-naphthyl)tetrazole, 1-methyl-5-aminotetrazole, 1,5-diaminotetrazole, imidazole, indole, purine, pyrazole, pyridine, pyrimidine, pyrrole, pyrrolidine, and pyrroline, as well as maltol and creatinine. These may be used alone or in combination of two or more. From the viewpoint of corrosion prevention against multiple metals, it is preferable to contain maltol and creatinine. From the viewpoint of corrosion prevention against Cu, it is preferable to contain benzotriazole, indole, and pyrroline. The content of the anticorrosive agent is preferably 0.01 to 5 wt%.

[0049] Examples of organic solvents other than component (C) include ethylene carbonate, propylene carbonate, N-methylpyrrolidone, etc. The content of these organic solvents is preferably 1 to 10% by weight.

[0050] Examples of surfactants include cationic surfactants such as distearyldimethylammonium chloride, anionic surfactants such as alkylbenzenesulfonates, amphoteric surfactants such as cocamidopropyl betaine, nonionic surfactants such as polyoxyethylene alkyl ethers, etc. The content of the surfactant is preferably 0.01 to 1% by weight.

[0051] Examples of the antifoaming agent include silicone oil, fatty acid ester, etc. The content of the antifoaming agent is preferably 0.01 to 1% by weight.

[0052] The photoresist stripper solution of the present invention can be prepared by mixing the above-mentioned components in a conventional manner. After preparation, it can be stored at a temperature of −5 to 40° C. without becoming cloudy, coagulating, or precipitating.

[0053] The photoresist stripper of the present invention can be used to strip unnecessary photoresist after etching of metal wiring, etc., in the manufacturing process of semiconductor substrates, flat panel display (FPD) substrates, etc. The photoresist stripper of the present invention can be used at room temperature or heated to, for example, 30°C to 80°C. The time required for stripping depends on the degree of deterioration of the photoresist, etc., but is generally, for example, about 30 seconds to 10 minutes. After treatment, water washing, air blow drying, etc. can be performed as necessary.

[0054] To strip photoresist from a metal wiring substrate having a copper layer or copper alloy layer using the photoresist stripper of the present invention, when forming metal wiring having a copper layer or copper alloy layer on the substrate using photoresist, the unnecessary photoresist is stripped and removed using the photoresist stripper of the present invention to prevent corrosion of the copper layer or copper alloy layer. More specifically, the substrate is immersed in the photoresist stripper of the present invention, for example, at room temperature to 80°C for 1 to 30 minutes. At this time, the photoresist stripper may be stirred or the substrate may be vibrated, if necessary. Alternatively, the photoresist stripper of the present invention may be sprayed onto the substrate using a shower or spray. In this case, brush cleaning may be used in combination to improve resist stripping properties.

[0055] After dissolving or stripping the photoresist, the photoresist stripper containing the dissolved resist is washed away, preferably with pure water, to remove the resist from the substrate. The liquid on the substrate is then blown off with an air knife or the like, and the substrate is dried. This prevents excessive corrosion of the copper layer or copper alloy layer, which would otherwise result in a reduction in the line width of the copper or copper alloy wiring. This allows for the formation of a good metal wiring without impairing the cross-sectional shape of the wiring formed by etching. Examples of multilayer metal wiring include, from top to bottom, a single-layer wiring of copper or copper alloy; a two-layer wiring of copper or copper alloy / copper or copper alloy with a different composition from the top layer; a two-layer wiring of copper or copper alloy / cap metal such as molybdenum or titanium; and a three-layer wiring of cap metal such as molybdenum or titanium / copper or copper alloy / cap metal such as molybdenum or titanium.

[0056] The photoresist stripping solution of the present invention can be used to strip either positive or negative photoresists, but due to its high photoresist stripping properties, it is preferably used to strip negative dry film resists. [Example]

[0057] The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

[0058] The Hansen solubility parameters of the organic solvents used in the examples are shown in Table 1. [Table 1]

[0059] (Examples 1 to 12, Comparative Examples 1 to 5) A photoresist stripping solution was obtained by mixing components (A) to (D) in the weight ratios shown in Table 2 below. The liquid state and resist stripping ability of the obtained photoresist stripping solution were evaluated using the methods described below. The results are shown in Table 2.

[0060] [Table 2]

[0061] (Evaluation method) 1. Liquid state The state of the photoresist stripping solution was visually observed at −5° C., 0° C. and 24° C. and evaluated according to the following criteria. ◎: No turbidity ○: Slightly cloudy △: Cloudy ×: Coagulation ××: Precipitation

[0062] 2. Resist stripping ability A Ti film and a copper seed layer were formed on a Si substrate by sputtering, and then a photoresist (negative dry film resist: Asahi Kasei Corporation's Sunfort "TS-B400") was roll-laminated to a thickness of 240 μm. The photoresist was patterned by UV exposure and development, and then a copper plating layer (200 μm thick) was formed by electroplating. The substrate was immersed in a photoresist stripper adjusted to 70°C for 30 minutes. After immersion, the substrate was washed with water and air-dried. The degree of removal of the dry film resist was confirmed using an electron microscope and evaluated according to the following criteria. ◎: No dry film resist is present on the substrate and completely dissolved in the stripping solution ◯: No dry film resist is present on the substrate, but a small amount of residue remains in the stripper △: A thin residue remains on the substrate. Residue also remains in the stripping solution. ×: A thick residue remains on the substrate. Residue also remains in the stripping solution. XX: Dry film resist barely dissolved, almost no change from before stripping

[0063] Comparative Example 1 did not contain organic solvent (C3), and therefore had poor resist stripping properties. Comparative Example 2 did not contain organic solvent (C2), and therefore had a high freezing point, and quaternary ammonium hydroxide precipitated at low temperatures, resulting in poor liquid state and resist stripping properties. Comparative Example 3 did not contain organic solvent (C1), and therefore had poor resist stripping properties. Comparative Examples 4 and 5 did not contain organic solvent (C3), and therefore had poor resist stripping properties, and also had a high freezing point and solidified at low temperatures. Examples 1 to 12 were stable in liquid state even at low temperatures, and also had good resist stripping properties.

Claims

1. A photoresist stripping solution comprising a quaternary ammonium hydroxide (A), water (B), an organic solvent (C), and an alkyleneamine or alkanolamine (D), The organic solvent (C) is selected from the following organic solvents (C1), (C2), and (C3): Dimethyl sulfoxide as the organic solvent (C1) An organic solvent (C2) having a polarity parameter (dP) of the Hansen solubility parameter of 3.0 or more and less than 14.0, and a hydrogen bond parameter (dH) of 8.0 or more and less than 31.

0. An organic solvent (C3) having a polarity parameter (dP) of 3.0 or more and less than 8.0, a hydrogen bond parameter (dH) of 2.5 or more and less than 8.0, and being a dimethyl ether. is a mixture of The content of the quaternary ammonium hydroxide (A) is 5% by weight or less, the content of the organic solvent (C1) is 50 to 80% by weight, the content of the organic solvent (C2) is 1 to 50% by weight, The content of the organic solvent (C3) is 3 to 50% by weight. A photoresist remover for removing photoresist from metal wiring boards.

2. 2. The photoresist stripping solution according to claim 1, wherein the content of the organic solvent (C1) is 50 to 78% by weight.

3. 3. The photoresist stripping solution according to claim 1, wherein the content of the organic solvent (C2) is 2 to 30% by weight.

4. 4. The photoresist stripping solution according to claim 1, wherein the content of the organic solvent (C3) is 5 to 40% by weight.

5. 5. The photoresist stripping solution according to claim 1, wherein the total content of the organic solvents (C1) to (C3) is 60 to 95% by weight.

6. A photoresist stripper according to any one of claims 1 to 5, wherein the content of alkyleneamine or alkanolamine (D) is 0.5 to 25 wt %.

7. 7. The photoresist stripping solution according to claim 1, wherein the component (D) is an alkanolamine.

8. A photoresist stripper according to any one of claims 1 to 7, wherein the organic solvent (C3) is triethylene glycol dimethyl ether.

9. The photoresist stripping solution according to any one of claims 1 to 8, which is used for stripping dry film resist.

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